Method for manufacturing optical member and light-emitting device

Abstract

Provided is a method for manufacturing an optical member having excellent adhesion to a cover member. The method for manufacturing an optical member includes: a preparation step of preparing a polycrystalline wavelength conversion member including phosphor particles, the wavelength conversion member having a first surface and a second surface positioned on the opposite side of the first surface; a forming step of converging laser light inside the wavelength conversion member to form a modified portion inside the wavelength conversion member; and a cutting step of pressing the wavelength conversion member from the first surface side and cutting the wavelength conversion member with the modified portion as a starting point.

Description

Technical Field

[0001] The present disclosure relates to a method for manufacturing an optical component and a light emitting device. Background Art

[0002] A light-emitting device is known, in which a plate-shaped optical component such as a wavelength conversion component is provided on a light-emitting element, and the sides of the light-emitting element and the optical component are covered by a reflective component. As an example, a method of forming a dividing groove on the first main surface of a base material (base material) and cutting the base material along the dividing groove to obtain a wavelength conversion component and a light-emitting device in which the side of the wavelength conversion component is covered by a reflective component such as a resin are disclosed (see patent document 1).

[0003] [Reference document]

[0004] [Patent document]

[0005] [Patent Document 1] (Japan) Patent Publication No. 2018-97060 Summary of the invention

[0006] [Technical issues to be solved]

[0007] An object of the present disclosure is to provide a method for producing an optical component having excellent adhesion (close contact) with a covering member.

[0008] [Technical solution]

[0009] A method for manufacturing an optical component according to one embodiment of the present disclosure comprises: a step of preparing a wavelength conversion component of a polycrystal having a first surface and a second surface located on the opposite side of the first surface and containing phosphor particles; a step of converging (focusing) laser light inside the wavelength conversion component to form a modified portion inside the wavelength conversion component; and a step of pressing the wavelength conversion component from the first surface side and cutting the wavelength conversion component with the modified portion as the starting point.

[0010] [Beneficial Effects]

[0011] According to one embodiment of the present disclosure, it is possible to provide a method for manufacturing an optical component having excellent adhesion with a cover member. BRIEF DESCRIPTION OF THE DRAWINGS

[0012] Figure 1 This is a perspective view schematically showing the optical component according to the first embodiment.

[0013] Figure 2 is along Figure 1 Cross-sectional view along line II-II.

[0014] Figure 3This is a schematic diagram for explaining the manufacturing process of the optical component according to the first embodiment (part 1).

[0015] Figure 4 This is a schematic diagram for explaining the manufacturing steps of the optical component according to the first embodiment (part 2).

[0016] Figure 5 This is a schematic diagram for explaining the manufacturing steps of the optical component according to the first embodiment (part 3).

[0017] Figure 6 This is a schematic diagram for explaining a manufacturing process of an optical component according to a modification of the first embodiment.

[0018] Figure 7 This is a perspective view schematically showing a light emitting device according to a second embodiment.

[0019] Figure 8 is along Figure 7 Cross-sectional view along line VIII-VIII.

[0020] Fig. 9 This is a laser microscope photograph of the side surface of the wavelength conversion component.

[0021] Fig.10 These are the measurement results of Sa and Ra on the side surface of the wavelength conversion member.

[0022] [Explanation of Reference Numerals]

[0023] 1 Lighting device

[0024] 10Wiring board

[0025] 11 Base material

[0026] 12 Top surface wiring

[0027] 13. Lower surface wiring

[0028] 20 light emitting elements

[0029] 20a Upper surface

[0030] 20b lower surface

[0031] 20c side

[0032] 25 electrodes

[0033] 30 protection elements

[0034] 40 Light guide components

[0035] 40c side

[0036] 50 optical components

[0037] 50d modification department

[0038] 50R Area

[0039] 50S wavelength conversion components

[0040] 50a 1st surface

[0041] 50b Surface 2

[0042] 50c side

[0043] 51 Area 1

[0044] 52 Area 2

[0045] 60 Covering parts

[0046] 61 1st covering part

[0047] 62 Second covering member

[0048] 310 support parts

[0049] 320 Pressing parts DETAILED DESCRIPTION

[0050] The manufacturing method of an embodiment of the present invention and the optical component obtained by the manufacturing method (hereinafter sometimes referred to as "optical component of the embodiment" (Note: "" is equivalent to "")) are described below with reference to the accompanying drawings. It should be noted that in the following description, terms representing specific directions and positions are used as needed (for example, "upper", "lower" and other terms containing these terms). However, these terms are only used to help understand the present invention with reference to the accompanying drawings, and the technical scope of the present invention is not limited by the meaning of these terms. In addition, parts with the same symbols appearing in multiple drawings represent the same or equivalent parts or components.

[0051] In addition, the embodiments described below are only examples of the manufacturing method of the optical components embodying the technical idea of ​​the present invention, and the present invention is not limited to the following content. In addition, unless otherwise specified, the size, material, shape, relative configuration, etc. of the components described below are not intended to limit the scope of the present invention, but are only for illustration. In addition, the content described in an embodiment may also be applied to other embodiments and variations. In addition, in order to clearly illustrate, the size, positional relationship, etc. of the components shown in the accompanying drawings may be exaggerated. In addition, in order to avoid the accompanying drawings being too complicated, sometimes a schematic diagram of the diagram omitting a part of the elements or an end view showing only the cut surface may be used as a cross-sectional view.

[0052] <Optical Component 50 of First Embodiment>

[0053] Figure 1This is a perspective view schematically showing the optical component according to the first embodiment. Figure 2 is along Figure 1 Cross-sectional view along line II-II. Figure 1 and Figure 2 In FIG. 1 , mutually orthogonal X and Y directions are defined, and a direction perpendicular to the X and Y directions is defined as a Z direction. In other drawings, the X, Y, and Z directions are also shown in the same manner.

[0054] like Figure 1 and Figure 2 As shown, the optical component 50 is plate-shaped. The optical component 50 has a first surface 50a, a second surface 50b which is a surface located on the opposite side of the first surface 50a, and a side surface 50c connected to the first surface 50a and the second surface 50b. The side surface 50c connects the outer edge of the first surface 50a and the outer edge of the second surface 50b. In the optical component 50, the first surface 50a and the second surface 50b are flat surfaces.

[0055] The optical component 50 is, for example, a rectangular parallelepiped. In this case, the first surface 50a and the second surface 50b of the optical component 50 are both rectangular, and the optical component 50 has four rectangular side surfaces 50c. The rectangular shape mentioned here refers to a rectangle or a square. Figure 1 and Figure 2 In the example of FIG. 5 , the first surface 50 a and the second surface 50 b are parallel to the XY plane. In addition, the side surface 50 c is parallel to the XZ plane or the YZ plane. The Z direction is the height direction (thickness direction) of the optical component 50 .

[0056] The optical component 50 is a wavelength conversion component of a polycrystal containing phosphor particles. The optical component 50 can convert incident light into light of a different wavelength and emit the converted light. The optical component 50 can emit a portion of the incident light. The optical component 50 can also convert all the incident light into light of a different wavelength. In this case, the light incident on the optical component 50 does not emit from the optical component 50.

[0057] The optical component 50 is a light-transmitting component. The optical component 50 can be used as a component constituting the light-emitting surface of the light-emitting device in a light-emitting device having a light-emitting element. The optical component 50 allows light emitted from the light-emitting element to enter from the second surface 50b, converts the light into light of a different wavelength, and emits the converted light from the first surface 50a, thereby adjusting the chromaticity of the light emitted by the light-emitting device.

[0058] The optical component 50 includes (has) a first region 51 where the surface of the phosphor particle is exposed and a second region 52 where the cross section of the phosphor particle is exposed at different positions in the height direction (Z direction) of the side surface 50c. The cross section of the phosphor particle is a cut surface after the phosphor particle is cut. The optical component 50 may also have a plurality of first regions 51 spaced apart from each other at different positions in the height direction (Z direction) of the side surface 50c.

[0059] The optical component 50 includes a first region 51 continuously arranged on all side surfaces 50c of the optical component 50 along the outer edge of the first surface 50a of the optical component 50. In addition, the optical component 50 may also include a first region 51 continuously arranged on all side surfaces 50c of the optical component 50 along the outer edge of the second surface 50b of the optical component 50. It should be noted that the first region 51 may also be intermittently arranged along all side surfaces 50c of the optical component 50.

[0060] In the optical component 50, the second region 52 may be arranged continuously on all the side surfaces 50c of the optical component 50, or may be arranged intermittently. A plurality of second regions 52 spaced apart from each other may also be arranged at different positions in the height direction of the side surface 50c. In this case, the first region is arranged between the plurality of second regions. The second region 52 is the surface where the modified portion 50d in the polycrystalline body is exposed from the side surface 50c of the optical component 50. As described later, the modified portion 50d may be formed by irradiating a laser (i.e., a laser beam) in the manufacturing step of the optical component 50. The modified portion 50d is a portion where the various materials constituting the polycrystalline optical component 50 containing phosphor particles are locally melted by the heat energy of the laser, and the state is that the various crystal grains are melted and a portion of the grain boundaries are mixed together. The modified portion 50d is formed along the inner region of the second region 52.

[0061] On the side surface of the optical component 50, the surface roughness of the first region 51 is greater than the surface roughness of the second region 52. Although the surface roughness of the first region 51 also depends on the particle size of the phosphor particles constituting the polycrystal, for example, its arithmetic mean roughness Ra is greater than 1.0 μm, for example, 2.0 μm or more and 3.0 μm or less. On the other hand, for example, the arithmetic mean roughness Ra of the surface roughness of the second region 52 is 0.5 μm or more and 1.0 μm or less.

[0062] Thus, the optical component 50 has a first region 51 where the surface of the phosphor particles is exposed and a second region where the cross section of the phosphor particles is exposed at different positions in the height direction of the side surface 50c. In addition, the surface roughness of the first region 51 is greater than the surface roughness of the second region 52. Therefore, when the optical component 50 is used in a light-emitting device, etc., when the optical component is covered by a covering member 60 such as a resin, the covering member is in contact with the first region 51 of the optical component 50, thereby improving the adhesion between the covering member 60 and the optical component 50.

[0063] From the viewpoint of the close adhesion between the optical component 50 and the cover member 60, it is preferable that the area formed by the first region 51 in the side surface 50c of the optical component 50 is larger than the area formed by the second region 52. In the light emitting device 1 including the optical component 50 and the cover member 60, by providing the side surface 50c of the optical component 50 with the first region 51 having a larger area, the anchor effect of the surface concavo-convex shape in the first region 51 can improve the close adhesion with the cover member 60.

[0064] In addition, the optical component 50 preferably has a second region 52 disposed on all the side surfaces 50c at a position parallel to the upper end of the side surface 50c. Accordingly, in the method for manufacturing the light emitting device 1, the climbing speed of the uncured (cured) resin forming the cover member 60 climbing up the side surface 50c and the height deviation of the covering position depending on the climbing speed can be controlled. In other words, by providing the optical component 50 with the second region 52 at a position parallel to the upper end of the side surface 50c of the side surface 50c, it is possible to suppress the uncured resin from climbing excessively locally. Accordingly, it is possible to reduce the situation where the resin climbs up to the upper surface of the optical component 50 constituting the light emitting surface of the light emitting device 1.

[0065] The optical component 50 is a wavelength conversion component of a polycrystal containing phosphor particles. Examples of the optical component 50 include a sintered body of a phosphor, a sintered body containing a phosphor and other inorganic materials, and the like.

[0066] The phosphor contained in the optical component 50 can be a yttrium aluminum garnet phosphor (for example, (Y, Gd) 3 (Al, Ga) 5 O 12 :Ce), lutetium aluminum garnet phosphors (for example, Lu3(Al, Ga)5O 12 :Ce), terbium aluminum garnet phosphors (for example, Tb3(Al, Ga)5O 12 :Ce), CCA-based phosphors (e.g., Ca 10 (PO4)6Cl2:Eu), SAE-based phosphors (e.g., Sr4Al 14 O 25: Eu), oxynitride phosphors such as chlorosilicate phosphors (e.g., Ca8MgSi4O 16 Cl2: Eu), silicate phosphors (e.g., (Ba, Sr, Ca, Mg)2SiO4: Eu), β-sialon phosphors (e.g., (Si, Al)3(O, N)4: Eu), or α-sialon phosphors (e.g., Ca(Si, Al) 12 (O, N) 16 : Eu), etc., LSN phosphors (e.g., (La, Y)3Si6N 11 : Ce), BSESN phosphors (e.g., (Ba, Sr)2Si5N8: Eu), SLA phosphors (e.g., SrLiAl3N4: Eu), CASN phosphors (e.g., CaAlSiN3: Eu), or SCASN phosphors (e.g., (Sr, Ca)AlSiN3: Eu), etc., nitride phosphors, KSF phosphors (e.g., K2SiF6: Mn), KSAF phosphors (e.g., K2(Si 1-x Al x )F 6-x : Mn, where x satisfies 0 < x < 1), or fluoride phosphors such as MGF phosphors (e.g., 3.5MgO·0.5MgF2·GeO2: Mn), quantum dots with a perovskite structure (e.g., (Cs, FA, MA)(Pb, Sn)(F, Cl, Br, I)3, where FA and MA represent formamidinium and methylammonium, respectively), II-VI group quantum dots (e.g., CdSe), III-V group quantum dots (e.g., InP), or quantum dots with a chalcopyrite structure (e.g., (Ag, Cu)(In, Ga)(S, Se)2), etc.

[0067] The inorganic materials contained in the optical component 50 can be alumina, aluminum nitride, silicon oxide, yttrium oxide, zirconium oxide, magnesium oxide, gadolinium oxide, or yttrium aluminum perovskite (YAP), etc.

[0068] The average particle size of the phosphor particles contained in the optical component 50 may be, for example, greater than 1 μm and less than 30 μm. The average particle size of the inorganic material contained in the optical component 50 may be, for example, greater than 1 μm and less than 20 μm. It should be noted that the average particle size of each material in the optical component 50 can be calculated based on a SEM image taken by a scanning microscope. For example, in an SEM image obtained by taking a cross-section of the optical component 50, the maximum width in the cross-section of the crystalline phase separated by grain boundaries and the minimum width passing through the center point of the maximum width are measured (determined), and the average value of the maximum width and the minimum width is taken as the particle size, and the arithmetic mean of the particle size within a specific range in the SEM image of the same magnification is taken as the average value of the particle size.

[0069] <Method for Manufacturing Optical Component According to First Embodiment>

[0070] The manufacturing method of the optical component of the first embodiment includes: a step of preparing a wavelength conversion component, the wavelength conversion component having a first surface and a second surface located on the opposite side of the first surface, and being a polycrystalline wavelength conversion component containing phosphor particles; a step of converging laser light into the interior of the wavelength conversion component to form a modified portion inside the wavelength conversion component; and a step of pressing the wavelength conversion component from the first surface side and cutting the wavelength conversion component starting from the modified portion.

[0071] Hereinafter, each manufacturing step of the method for manufacturing the optical component according to the first embodiment will be described with reference to the drawings.

[0072] Figure 3 to Figure 5 This is a schematic diagram for explaining the manufacturing steps of the optical component of the first embodiment. Specifically, Figure 3 and Figure 4 This is a perspective view illustrating the manufacturing steps of the optical component. Figure 5 The cross-sectional views illustrate the steps of manufacturing an optical component.

[0073] (Step of Preparing Wavelength Converting Component)

[0074] First, if Figure 3 As shown, a wavelength conversion member 50S of a polycrystalline material including phosphor particles is prepared, which has a first surface 50a, a second surface 50b located on the opposite side of the first surface 50a, and a side surface 50c connected to the first surface 50a and the second surface 50b. Figure 3 In the example, the first surface 50a and the second surface 50b are parallel to the XY plane. In addition, the side surface 50c is parallel to the XZ plane or the YZ plane. The Z direction is the height direction (thickness direction) of the wavelength conversion component 50S. The thickness of the prepared wavelength conversion component is, for example, greater than 50 μm and less than 200 μm.

[0075] The wavelength conversion member 50S includes a plurality of regions 50R which become the optical member 50 after being singulated. Figure 3 In the example, the boundary of the region 50R is defined by a straight line extending in the X direction and a straight line extending in the Y direction, and in the top view of the wavelength conversion component 50S, the region 50R is arranged in a two-dimensional matrix. Figure 3 In the example of , in the top view of the wavelength conversion member 50S, the region 50R is a square. It should be noted that the two-dot chain line is only a virtual line indicating a boundary and does not actually exist (cannot be visually recognized).

[0076] (Step of forming a modified portion)

[0077] Then, if Figure 4 As shown, the laser light La is focused inside the wavelength conversion member 50S to form a reformed portion 50d inside the wavelength conversion member 50S.

[0078] The laser light La can be irradiated from, for example, a picosecond laser device or a femtosecond laser device. The oscillation wavelength of the laser light La is, for example, 700 nm to 1500 nm. The transmittance of the wavelength conversion member 50S to the laser light La is preferably 60% or more.

[0079] Specifically, first, Figure 4 As shown on the upper side of the arrow, the laser La is irradiated from a direction substantially perpendicular to the second surface 50b of the wavelength conversion component 50S. The irradiation position of the laser La is located on the two-dot chain line indicating the boundary of the region 50R on the second surface 50b, and the focusing position of the laser La is located at a position closer to the second surface 50b than the center (center) in the thickness direction (Z direction) inside the wavelength conversion component 50S.

[0080] In the case of irradiation with laser light La, for example, Figure 4 As shown in FIG. 1 , the irradiation is directed onto the two-dot chain line representing the boundary of the region 50R extending in the Y direction. Figure 4 As shown below the arrow, the modified portion 50d may be formed inside the wavelength conversion member 50S along the Y direction in the top view. In the step of cutting the wavelength conversion member described later, it is preferred that the position (portion) where the modified portion 50d is not formed is fractured along the grain boundary starting from the modified portion 50d, and for this purpose, the modified portion 50d is formed in a straight line shape in the top view.

[0081] It should be noted that if Figure 3 As shown, if there are a plurality of two-dot chain lines (here, five) along the Y direction indicating the boundaries of the region 50R, the laser light La is sequentially irradiated along these lines to form the modified portion 50d inside each irradiation position.

[0082] Next, the laser light La is irradiated along the two-dot chain line indicating the boundary of the region 50R extending in the X direction. As a result, the modified portion 50d can be formed into a linear shape along the X direction in a plan view inside the wavelength conversion member 50S. Figure 3 As shown, if there are a plurality of two-dot chain lines (here, three) along the X direction indicating the boundary of the region 50R, the laser light La is irradiated along these lines to form the modified portion 50d inside each irradiation position.

[0083] As described above, inside the wavelength conversion component 50S, the modified portion 50d can be formed in a lattice shape at a position overlapping with the boundary line of the region 50R in the top view of the wavelength conversion component 50S. Inside the wavelength conversion component 50S, the modified portion 50d can be formed at a position separated from the first surface 50a and the second surface 50b, or can be formed to be connected to the first surface 50a and the second surface 50b. Among them, the modified portion 50d is preferably formed at a position separated from the first surface 50a and the second surface 50b. By converging and irradiating the interior of the wavelength conversion component 50S with laser La, the modified portion 50d can be configured in a manner separated (isolated) from the surfaces on the first surface 50a and the second surface 50b sides of the wavelength conversion component 50S. By disposing the modified portion 50d in this manner, it is possible to reduce the adhesion of dust such as smoke to the first surface 50a and the second surface 50b and the burning caused by the irradiation of the laser light La when forming the modified portion 50d.

[0084] In the step of forming the reformed portion, Figure 4 As shown, the modified portion 50d is preferably formed in a region where the depth D from the second surface 50b of the wavelength conversion member 50S is greater than 0 and less than or equal to 10 μm. It should be noted that the depth D is the distance in the Z direction from the second surface 50b to the position of the modified portion 50d closest to the second surface 50b.

[0085] Considering the ease of cutting the wavelength conversion member 50S and the close adhesion with the covering member 60 in the light emitting device 1, the length L of the modified portion 50d in the depth direction (Z direction) of the wavelength conversion member 50S is preferably not less than 2% and not more than 30% of the thickness T of the wavelength conversion member 50S. In addition, the width W of the modified portion 50d in the direction parallel to the second surface 50b of the wavelength conversion member 50S is preferably not less than 1 μm and not more than 10 μm.

[0086] By setting the length L of the modified portion 50d to be 2% or more of the thickness T of the wavelength conversion component 50S and the width W of the modified portion 50d to be 1 μm or more, the wavelength conversion component 50S can be easily cut along the modified portion 50d. On the other hand, by setting the length L of the modified portion 50d to be 30% or less of the thickness T of the wavelength conversion component 50S and the width W of the modified portion 50d to be 10 μm or less, the area ratio of the first region in the side surface 50c of the formed optical component 50 can be increased, and the adhesion between the optical component 50 and the cover component 60 can be improved.

[0087] It should be noted that, from the viewpoint of facilitating cutting of the wavelength conversion member 50S, the length L of the modified portion 50d in the depth direction (Z direction) of the wavelength conversion member 50S may be 30% or more of the thickness T of the wavelength conversion member 50S. However, considering that the modified portion 50d is a region where the wavelength conversion efficiency decreases due to the irradiation of the laser, from the viewpoint of improving the light extraction efficiency of the light emitting device 1, the length L of the modified portion 50d and the thickness T of the wavelength conversion member 50S are also preferably within the above range.

[0088] It should be noted that the modified portion 50d is formed when the energy at the focusing position of the laser La exceeds the processing threshold of the material constituting the wavelength conversion member 50S. The greater the energy at the focusing position of the laser La, the longer the length L formed. In addition, the width W is formed to be smaller than the spot diameter at the focusing position of the laser La.

[0089] (Step of cutting wavelength conversion member)

[0090] Next, the wavelength conversion member 50S is pressed from the first surface 50a side and cut with the modified portion 50d as a starting point. In this step, for example, the wavelength conversion member 50S can be cut by pressing along the straight line of the linear modified portion 50d.

[0091] Specifically, cracks are generated in the modified portion 50d formed by irradiation with the laser La, and the wavelength conversion component 50S is cut by pressing with the crack extending from the modified portion 50d as the starting point. It should be noted that in the region where the modified portion 50d is not formed, the cracks extend between the grain boundaries of the wavelength conversion component 50S of the polycrystalline body in a manner along the pressing direction.

[0092] Here, as an example, a method of cutting using a support member 310 and a pressing member 320 is shown. Figure 5 As shown on the upper side of the arrow, the supporting member 310 is arranged on the second surface 50b side of the wavelength conversion member 50S, and the wavelength conversion member 50S is pressed from the first surface 50a side by the pressing member 320.

[0093] Preferably, the support member 310 is elastically deformable by the pressing of the pressing member 320. The support member 310 may be made of, for example, rubber, resin, metal, etc. The elastic deformation of the support member 310 caused by the pressing of the pressing member 320 can partially press the wavelength conversion member 50S, thereby making it easier for the wavelength conversion member 50S to be cut along the modified portion 50d.

[0094] The pressing member 320 may press the entire first surface 50a at one time, or may press a portion of the first surface 50a. Preferably, the pressing member 320 may move on the first surface 50a while pressing a portion of the first surface 50a. As the pressing member 320, for example, a member such as a roller that can move on the first surface 50a while rotating may be cited. As far as the pressing member 320 is concerned, it may be a non-rotating member as long as it can move smoothly on the first surface 50a. Figure 5 In the example shown in FIG. 1 , the pressing member 320 has an elongated cylindrical shape and is arranged such that its longitudinal direction is oriented (faces) in the Y direction.

[0095] For example, on the first surface 50a, along the formation direction of the modified portion 50d ( Figure 5 In the example, the Y direction) is perpendicular to the Figure 5 The pressing member 320 is moved in the X direction in the example, and the wavelength conversion member 50S is pressed at the same time. Accordingly, the wavelength conversion member 50S is pressed along the straight line of the modified portion 50d formed into a straight line shape in a plan view, as shown in FIG. Figure 5 As shown below the arrow, the wavelength conversion member 50S is cut starting from the modified portion 50d. Next, the pressing member 320 is rotated 90 degrees in the XY plane so that the longitudinal direction of the pressing member 320 is oriented toward the X direction. Then, on the first surface 50a, Figure 5 The wavelength conversion member 50S is pressed while the pressing member 320 is moved in the Y direction. Thus, the modified portions 50d arranged in a lattice are all cut, and a plurality of optical members 50 are obtained in pieces.

[0096] It should be noted that it is difficult to observe the modified portion 50d formed inside the wavelength conversion component 50S from the first surface 50a side, so it is difficult to make the pressing position of the pressing component 320 consistent with the position of the modified portion 50d. However, by moving the pressing component 320 on the first surface 50a while pressing in one direction, it is easy to cut it even if the position of the modified portion 50d is not known exactly. In addition, by providing a mark indicating the formation direction of the modified portion 50d on the wavelength conversion component 50S in advance, it is also easy to make the formation direction of the modified portion 50d consistent with the moving direction of the pressing position of the pressing component 320.

[0097] like Figure 1 and Figure 2 As shown, each optical component 50 obtained by cutting has a first region 51 where the surface of the phosphor particles is exposed and a second region 52 where the cross section of the phosphor particles is exposed at different positions in the height direction of the side surface 50c. The second region 52 is the cut surface of the modified portion 50d.

[0098] Thus, by forming the modified portion 50d inside the wavelength conversion component 50S, even if the length L and width W of the modified portion 50d are small, the wavelength conversion component 50S can be easily cut along the modified portion 50d using the modified portion 50d as a break base point.

[0099] In addition, when the wavelength conversion component 50S is cut by dicing with a blade, for example, a cutting margin based on the width of the blade is generated. However, in the method of cutting the wavelength conversion component 50S along the modified portion 50d as in the manufacturing method of the present embodiment, no substantial cutting margin is generated, and the number of optical components 50 extracted from the wavelength conversion component 50S can be increased.

[0100] <Modification>

[0101] Figure 6 This is a schematic diagram for explaining the manufacturing steps of an optical component according to a modified example of the first embodiment. Specifically, Figure 6 This is a perspective view illustrating the manufacturing steps of the optical component.

[0102] In the first embodiment, an example is shown in which the laser light La is irradiated from the second surface 50b side opposite to the side (the first surface 50a side) where the pressure is applied during cutting. Figure 6 As shown in FIG. 1 , the laser light La is irradiated from the side (the first surface 50 a side) that is pressed during cutting.

[0103] Specifically, if Figure 6 As shown on the upper side of the arrow, the laser La is irradiated from a direction substantially perpendicular to the first surface 50a of the wavelength conversion component 50S. The focusing position of the laser La is deeper than that of the first embodiment. That is, the focusing position of the laser La is a position inside the wavelength conversion component 50S that is closer to the second surface 50b than the center (center) in the height direction (Z direction).

[0104] By irradiating the laser light La along the two-dot chain line indicating the boundary of the region 50R extending in the Y direction, as shown in FIG. Figure 6 As shown on the lower side of the arrow, inside the wavelength conversion member 50S, the reformed portion 50d is continuously formed in a straight line shape along the Y direction in a plan view.

[0105] Next, the laser light La is irradiated along a virtual line indicating the boundary of the region 50R extending in the X direction. As a result, the modified portion 50d is continuously formed in a straight line shape along the X direction in a plan view inside the wavelength conversion member 50S.

[0106] Thus, even when the laser light La is irradiated from the first surface 50a side, by deepening the focusing position, the modified portion 50d can be formed on the side close to the second surface 50b similarly to the first embodiment. Figure 5 As described above, by pressing the wavelength conversion member 50S from the first surface 50 a side, the wavelength conversion member 50S can be cut, and a plurality of individual optical members 50 can be obtained.

[0107] <Second Embodiment>

[0108] In the second embodiment, an example of a light emitting device including the optical component of the first embodiment is described.

[0109] Figure 7 This is a perspective view schematically showing a light emitting device according to a second embodiment. Figure 8 is along Figure 7 Cross-sectional view along line VIII-VIII. Figure 8 2 shows a cross section of the light emitting device 1 cut along a plane perpendicular to the upper surface of the light emitting element 20 .

[0110] like Figure 7 and Figure 8 As shown, the light emitting device 1 includes a wiring substrate 10, a light emitting element 20, a protective element 30, a light guide member 40, an optical member 50, and a cover member 60. It should be noted that the light emitting device 1 may also be a configuration (structure) without the wiring substrate 10, the protective element 30, the light guide member 40, and the cover member 60.

[0111] In the light-emitting device 1, the light-emitting element 20 is arranged on the wiring substrate 10. The light-emitting element 20 has an upper surface 20a, a plurality of side surfaces 20c connected to the upper surface 20a, and a lower surface 20b located on the opposite side of the upper surface 20a. The plurality of side surfaces 20c are connected to the upper surface 20a and the lower surface 20b. In other words, the plurality of side surfaces 20c have outer edges connected to the outer edge of the upper surface 20a and the outer edge of the lower surface 20b, respectively. In the light-emitting element 20, light is emitted from the upper surface 20a, the lower surface 20b and the side surfaces 20c. In addition, in the light-emitting device 1, a protective element 30 may also be arranged on the wiring substrate 10.

[0112] The light emitting element 20 has an upper surface 20a that is roughly rectangular. For example, the appearance shape of the light emitting element 20 is roughly a rectangular parallelepiped or a quadrangular pyramid. In this case, the upper surface 20a and the lower surface 20b of the light emitting element 20 are roughly rectangular, and the light emitting element 20 has four roughly rectangular or trapezoidal side surfaces 20c. The shape of the upper surface 20a of the light emitting element 20 can also be a polygon such as a triangle or a hexagon. In addition, as for the appearance shape of the light emitting element 20, it can also be a columnar body or a frustum body with a polygonal upper surface.

[0113] The light-guiding component 40 continuously covers the upper surface 20a of the light-emitting element 20 and a plurality of side surfaces 20c connected to the upper surface 20a. Specifically, the light-guiding component 40 covers the entire upper surface 20a of the light-emitting element 20 and at least a portion of the upper end side (in other words, the outer edge side connected to the upper surface 20a) of each side surface 20c. The light-guiding component 40 has a side surface 40c connected to the side surface 20c of the light-emitting element 20 and the lower surface of the optical component 50. The light-guiding component 40 preferably covers more areas of each side surface 20c of the light-emitting element 20, and preferably covers substantially all surfaces of each side surface 20c. That is, the side surface 40c of the light-guiding component 40 preferably connects to the side surface 20c at a position close to the lower end side (in other words, the side connected to the lower surface 20b) of each side surface 20c of the light-emitting element 20, and preferably connects to the lower end of each side surface 20c. Specifically, on each side surface 20 c of the light emitting element 20 , preferably 75% to 100% of the area along the height direction from the upper end is covered by the light guide member 40 , more preferably 90% to 100% of the area is covered by the light guide member 40 .

[0114] The optical component 50 is arranged on the light emitting element 20 via the light guide component 40. As described in the first embodiment, the optical component 50 is a wavelength conversion component of a polycrystal containing phosphor particles, and has a first region 51 where the particle surface of the phosphor particles is exposed and a second region 52 where the particle cross section of the phosphor particles is exposed at different positions in the height direction of the side surface 50c. The details of the first region 51 and the second region 52 are the same as those in the first embodiment.

[0115] The first surface 50a of the optical component 50 constitutes a part of the upper surface of the light-emitting device 1 as the light extraction surface of the light-emitting device 1. The optical component 50 is arranged on the light-emitting element 20 so that the second surface 50b of the optical component 50 is oriented toward (facing) the upper surface 20a of the light-emitting element 20 via the light-guiding component 40 arranged on the upper surface 20a of the light-emitting element 20. The optical component 50 is arranged so that the second surface 50b of the optical component 50 is substantially parallel to the upper surface 20a of the light-emitting element 20. The shape of the second surface 50b of the optical component 50 is preferably a shape similar to the shape of the upper surface 20a of the light-emitting element. For example, when the upper surface 20a of the light-emitting element is rectangular, the second surface 50b of the optical component 50 is also preferably rectangular.

[0116] The second surface 50b of the optical component 50 preferably has an area larger than the upper surface 20a of the light emitting element 20. In addition, the optical component 50 is preferably configured so that the second surface 50b of the optical component 50 encloses (contains) the light emitting element 20 in a plan view. In addition, in the light emitting device 1, the light guide component 40 between the second surface 50b of the optical component 50 and the upper surface 20a of the light emitting element 20 preferably covers the second surface 50b of the optical component 50 that does not overlap with the upper surface 20a of the light emitting element 20 in a plan view. In addition, in the light emitting device 1, the light guide component 40 is preferably configured to reach the outer edge of the second surface 50b of the optical component 50, and preferably, the entire second surface 50b is covered by the light guide component 40. Accordingly, more light emitted from the light emitting element 20 can be incident from the second surface 50b of the optical component 50 via the light guide component 40.

[0117] The covering member 60 is disposed on the wiring substrate 10 so that the upper surface of the optical member 50, that is, the first surface 50a is exposed, and covers the side surface 50c of the optical member 50 and the side surface 20c of the light emitting element 20. The covering member 60 may directly cover the side surface 20c of the light emitting element 20, or may cover it via other members such as the light guide member 40. In addition, in the case where the light emitting device 1 has the protective element 30, the covering member 60 preferably covers the upper surface, the lower surface and the side surface of the protective element 30. In addition, the covering member 60 may also cover the side surface 20c exposed from the light guide member 40 of the light emitting element 20 and the lower surface 20b of the light emitting element 20.

[0118] By covering the side surface 40c of the light guide member 40 with the cover member 60, light emitted from the side surface 20c of the light emitting element 20 and transmitted through the light guide member 40 can be reflected by the cover member 60. In addition, by covering the lower surface 20b of the light emitting element 20 with the cover member 60, light traveling below the light emitting element 20 can be reflected by the cover member 60. Thus, the light extraction efficiency in the light emitting device 1 can be improved.

[0119] The covering member 60 may be composed of a single member or a plurality of members. Figure 7 and Figure 8 In the example shown, the cover member 60 is composed of a first cover member 61 and a second cover member 62. The first cover member 61 is provided on the wiring substrate 10, for example, and covers at least a portion of the lower surface 20b of the light emitting element 20 and the side surface 40c of the light guide member 40. In addition, when the light emitting device 1 has the protection element 30, the first cover member 61 covers at least a portion of the lower surface and the side surface of the protection element 30, for example.

[0120] The second covering member 62 is, for example, provided on the first covering member 61, and covers the side surface of the optical member 50. In addition, when the light emitting device 1 has the protection element 30, the second covering member 62 covers, for example, the upper surface of the protection element 30. The second covering member 62 may cover a portion of the side surface of the optical member 50 and a portion of the side surface of the protection element 30.

[0121] The side surface of the second covering member 62 and the side surface of the base material 11 of the wiring substrate 10 together constitute the side surface of the light emitting device 1. The side surface of the second covering member 62 and the side surface of the base material 11 can be, for example, the same surface. In addition, the upper surface of the second covering member 62 and the first surface 50a of the optical member 50 can be, for example, the same surface.

[0122] Thus, in the light emitting device 1, the optical component 50 has the first region 51 where the particle surface of the phosphor particles is exposed and the second region where the particle cross section of the phosphor particles is exposed at different positions in the height direction of the side surface 50c. In addition, the surface roughness of the first region 51 is greater than the surface roughness of the second region 52. Therefore, by making the cover member 60 contact with the first region 51 of the optical component 50, the adhesion between the cover member 60 and the optical component 50 can be improved.

[0123] Next, each element constituting the light emitting device 1 according to the embodiment will be described in detail.

[0124] [Wiring board 10]

[0125] The wiring substrate 10 is a component for configuring the light emitting element 20. The wiring substrate 10 is provided with wiring for supplying power to the light emitting element from the outside and a substrate 11 for supporting the wiring. As an example, the wiring substrate 10 has an upper surface wiring 12 provided on the upper surface where the light emitting element 20 is configured and a lower surface wiring 13 provided on the lower surface on the opposite side of the upper surface. The substrate 11 is, for example, roughly in the shape of a rectangular parallelepiped. The substrate 11 preferably uses an insulating material that is difficult to transmit light emitted from the light emitting element 20 and external light. Examples of materials for the substrate 11 include ceramics such as alumina, aluminum nitride, silicon nitride, and mullite, epoxy resins, silicone resins, modified epoxy resins, polyurethane resins, phenolic resins, polyimide resins, BT resins, polyphthalamide, and other resins, semiconductors such as silicon, and single materials and composite materials of metals such as copper and aluminum. Among them, as the material of the substrate 11, ceramics with excellent heat dissipation are preferably used.

[0126] The upper surface wiring 12 includes wiring electrically connected to the light emitting element 20 and wiring electrically connected to the protection element 30. The lower surface wiring 13 includes an external connection terminal electrically connected to an external power supply. The upper surface wiring 12 and the lower surface wiring 13 can use metals such as iron, copper, nickel, aluminum, gold, silver, platinum, titanium, tungsten, palladium, or alloys containing at least one of these metals. In addition, the wiring substrate 10 may also be provided with relay wiring for connecting the upper surface wiring 12 and the lower surface wiring 13 inside and / or on the side of the substrate 11.

[0127] The wiring substrate 10 may not have the lower surface wiring 13. In this case, an external connection terminal electrically connected to an external power source may be arranged on the upper surface or the side surface.

[0128] It should be noted that the wiring substrate 10 may also be a structure having a recessed portion on the upper surface, and in the light-emitting device 1, the light-emitting element 20 is arranged at the bottom of the recessed portion of the wiring substrate 10. In addition, the light-emitting device 1 may also be a structure not having the wiring substrate 10. For example, the light-emitting device may be a structure having a metal component exposed from the covering component 60 covering the lower surface 20b of the light-emitting element 20, and the metal component is used as an electrode of the light-emitting device 1.

[0129] (Light emitting element 20)

[0130] The light-emitting element 20 may preferably be a semiconductor light-emitting element such as a light-emitting diode (LED) chip or a semiconductor laser (LD) chip. The shape, size, etc. of the light-emitting element 20 may be arbitrarily selected. The light-emitting element 20 may have a plurality of electrodes 25 on a lower surface 20b, for example. The light-emitting element 20 is disposed on a wiring substrate 10. The light-emitting element 20 may be flip-chip mounted on the wiring substrate 10, for example, in such a manner that the lower surface 20b having the electrodes 25 faces the wiring substrate 10 side. The plurality of electrodes 25 of the light-emitting element 20 are electrically connected to the upper surface wiring 12. The plurality of electrodes 25 of the light-emitting element 20 and the upper surface wiring 12 may be connected using, for example, known components such as eutectic solder, conductive paste, and bumps.

[0131] The light emitting element 20 includes, for example, a semiconductor structure and a supporting substrate for supporting the semiconductor structure. The semiconductor structure includes an n-side semiconductor layer, a p-side semiconductor layer, and an active layer sandwiched between the n-side semiconductor layer and the p-side semiconductor layer. The active layer may be a quantum well (SQW) structure or a multi-quantum well (MQW) structure including a plurality of well layers. The semiconductor structure includes a plurality of semiconductor layers composed of nitride semiconductors. Nitride semiconductors include all semiconductor layers having a chemical formula In x Al y Ga 1-x-y A semiconductor having a composition represented by N (0≤x, 0≤y, x+y≤1), wherein the composition ratios x and y can vary within their respective ranges. The peak wavelength of light emission of the active layer can be appropriately selected according to the purpose of use. The active layer is configured to emit visible light or ultraviolet light, for example.

[0132] The light emitting element 20 may have one semiconductor structure on one supporting substrate, or may have a plurality of semiconductor stacks on one supporting substrate. In addition, one semiconductor structure may have only one light emitting layer, or may have a plurality of light emitting layers. The structure of the semiconductor structure having a plurality of light emitting layers may be a structure including a plurality of active layers between one n-side semiconductor layer and one p-side semiconductor layer, or may be a structure in which a structure including an n-side semiconductor layer, an active layer, and a p-side semiconductor layer in sequence is repeated multiple times.

[0133] In the light emitting element 20, a plurality of electrodes 25 are arranged on the semiconductor structure. The electrode 25 includes an n-electrode connected to the n-side semiconductor layer and a p-electrode connected to the p-side semiconductor layer. The p-electrode and the n-electrode may be arranged on different surfaces of the semiconductor stack or on the same surface. Here, the plurality of electrodes 25 including the p-electrode and the n-electrode are arranged on the same surface of the semiconductor structure, and the side on which the plurality of electrodes 25 are arranged constitutes the lower surface 20b of the light emitting element 20, and the surface of the supporting substrate opposite to the surface on which the semiconductor structure is arranged constitutes the upper surface 20a of the light emitting element 20. As the supporting substrate, insulating substrates such as sapphire, spinel (MgAl2O4), nitride semiconductor substrates such as gallium nitride, etc. may be cited. It should be noted that in order to extract the light emitted from the active layer via the supporting substrate, the supporting substrate is preferably made of a light-transmitting material. It should be noted that the light emitting element 20 may also be a structure without a supporting substrate. In this case, the surface opposite to the surface on which the electrodes of the semiconductor structure are arranged constitutes the upper surface 20a of the light emitting element 20.

[0134] (Protection element 30)

[0135] The light emitting device 1 may include a protection element 30 . The protection element 30 is a component for improving the electrostatic withstand voltage. The protection element 30 is, for example, a Zener diode. The protection element 30 is disposed on the wiring substrate 10 .

[0136] (Light guide member 40)

[0137] The light guide member 40 is a member that guides the light emitted from the light emitting element 20 to the optical member 50. By covering the side of the light emitting element 20 with the light guide member 40, the light emitted from the side of the light emitting element 20 can be easily guided to the optical member 50, thereby improving the light extraction efficiency in the light emitting device 1. In addition, the light guide member 40 can also be used as an adhesive member for bonding the light emitting element 20 and the optical member 50.

[0138] The light guide component 40 is configured to cover the upper surface 20a and each side surface 20c of the light emitting element 20. The light guide component 40 covering the side surface 20c of the light emitting element 20 can be formed by applying an uncured (uncured) adhesive resin for bonding the optical component 50 and the light emitting element 20 to the side surface 20c of the light emitting element 20 and curing it. As the adhesive resin that becomes the light guide component 40 after curing, for example, a resin with light transmittance can be used. As the resin with light transmittance, for example, thermosetting resins such as epoxy resin, modified epoxy resin, silicone resin, and modified silicone resin can be listed. Among them, silicone resin with high heat resistance is preferably used. It should be noted that the light guide component 40 contains a light diffusion component and / or a phosphor described later. In addition, the light emitting element 20 and the optical component 50 can also be directly bonded without passing through the adhesive resin of the light guide component 40. In this case, the light emitting device 1 can be a structure without the light guide component 40.

[0139] (Covering member 60)

[0140] The cover member 60 preferably has a light shielding property, specifically, preferably has light reflectivity and / or light absorption. Among them, it is preferred that the cover member 60 contains a material that can preferably reflect the light emitted from the light emitting element 20. For example, it is preferred that the reflectivity relative to the light emitted from the light emitting element 20 is 60% or more, preferably 70% or more, 80% or more, or 90% or more.

[0141] The covering member 60 is preferably made of an insulating material. The covering member 60 is, for example, a member in which particles of a light-reflective substance are contained in a light-transmitting resin. As the resin used for the covering member 60, for example, there can be listed resins or mixed resins containing one or more of silicone resins, modified silicone resins, epoxy resins, modified epoxy resins, urea resins, acrylic resins, phenolic resins, bismaleimide triazine resins, and polyphthalamide resins. Among them, it is particularly preferred to use silicone resins that are excellent in light resistance, heat resistance, and electrical insulation and have flexibility. As light-reflective substances, for example, titanium oxide, silicon oxide, aluminum oxide, zirconium oxide, magnesium oxide, potassium titanate, barium titanate, zinc oxide, silicon nitride, aluminum nitride, boron nitride, calcium carbonate, calcium hydroxide, calcium silicate, and combinations thereof. Among them, from the viewpoint of light reflection, titanium oxide having a higher refractive index is preferably used.

[0142] As described above, the cover member 60 may be composed of the first cover member 61 and the second cover member 62. In this case, each of the first cover member 61 and the second cover member 62 may be formed using a material selected from the above materials exemplified as the material of the cover member 60. By configuring the cover member 60 with the first cover member 61 and the second cover member 62, for example, a material with high mechanical strength may be used for the second cover member 62 constituting the outer surface of the light emitting device 1, or a material with low elasticity and low linear expansion may be used for the first cover member 61 covering the lower surface 20b of the light emitting element 20 to reduce stress caused by resin expansion.

[0143] (Operation of Light Emitting Device 1)

[0144] In the light-emitting device 1, when current is supplied from an external power source to the light-emitting element 20, the light-emitting element 20 emits light. Of the light emitted by the light-emitting element 20, the light traveling upward (in other words, the lower surface side of the optical component) is extracted to the outside of the light-emitting device 1 via the light-guiding component 40 and the optical component 50. In addition, of the light emitted by the light-emitting element 20, the light traveling downward is reflected by the cover component 60 and the wiring substrate 10, and is extracted to the outside of the light-emitting device 1 via the light-guiding component 40 and the optical component 50. In addition, of the light emitted by the light-emitting element 20, the light traveling in the lateral direction is reflected by the interface between the side surface 20c of the light-guiding component 40 and the cover component 60, and is extracted to the outside of the light-emitting device 1 via the light-guiding component 40 and the optical component 50.

[0145] As described above, in the light-emitting device 1, the optical component 50 includes the first region 51 where the particle surface of the phosphor particles is exposed and the second region where the particle cross-section of the phosphor particles is exposed at different positions in the height direction of the side surface 50c. In addition, the surface roughness of the first region 51 is greater than the surface roughness of the second region 52. For this reason, by making the cover member 60 contact the first region 51 of the optical component 50, the closeness between the cover member 60 and the optical component 50 can be improved. In particular, by configuring the first region 51 to be connected to the upper surface of the optical component 50 that becomes the light-emitting surface of the light-emitting device 1, the interface peeling between the optical component 50 and the cover member 60 in the light-emitting surface of the light-emitting device 1 can be suppressed, and the reliability of the light-emitting device 1 can be improved.

[0146] [Example]

[0147] Examples will be described in detail below; however, the present invention is not limited to these examples.

[0148] In Example 1, a wavelength conversion component A of a polycrystal containing phosphor particles was prepared. The wavelength conversion component A is a wavelength conversion component in which a sintered body is processed into a wafer shape with a thickness of about 180 μm, and the sintered body contains YAG (yttrium aluminum garnet) with a particle size of 2 μm to 4 μm as a phosphor and YAP (yttrium aluminum perovskite) with a particle size of 1.5 μm to 2.5 μm as a diffusion material of an inorganic material. Next, a laser is converged inside the wavelength conversion component A to form a modified portion inside, and then it is pressed and cut starting from the modified portion.

[0149] In Example 2, a wavelength conversion component B of a polycrystalline material containing phosphor particles was prepared. The wavelength conversion component B is a wavelength conversion component in which a sintered body is processed into a wafer shape with a thickness of about 160 μm, and the sintered body contains YAG with a particle size of 8 μm to 15 μm as a phosphor and alumina with a particle size of 5 μm to 10 μm as a diffusion material of an inorganic material. Next, laser light is converged inside the wavelength conversion component B to form a modified portion inside, and then it is pressed and cut starting from the modified portion.

[0150] Next, the side surfaces of the five samples of the cut wavelength conversion components A and B were observed using a microscope, and the arithmetic mean height Sa and arithmetic mean roughness Ra of the side surfaces of each sample were measured. The side surface observation and the measurement of Sa and Ra were performed using a shape analysis laser microscope, model VK-X200 (manufactured by Keyence Corporation).

[0151] By observing the side surface using a laser microscope, for the samples of wavelength conversion components A and B, a first region where the particle surface of the phosphor particles is exposed and a second region where the particle cross section of the phosphor particles is exposed were confirmed at different positions in the height direction of the side surface. An example of the observation results is shown in Fig. 9 . Fig. 9 The following are laser microscope photographs of a portion of the side surface of one sample of wavelength conversion component A and a portion of the side surface of one sample of wavelength conversion component B. Fig. 9 It can be seen that in the photographs of the wavelength conversion members A and B, the first region having a larger surface roughness is confirmed on the lower side, and the second region having a smaller surface roughness is confirmed on the upper side.

[0152] Fig.10The following are the measurement results of Sa and Ra of the side surface of the wavelength conversion component. For wavelength conversion component A, the average values ​​of the five samples are: Sa of the first region is 2.41 μm, Sa of the second region is 0.73 μm, Ra of the first region is 2.42 μm, and Ra of the second region is 0.75 μm. For wavelength conversion component B, the average values ​​of the five samples are: Sa of the first region is 1.85 μm, Sa of the second region is 0.82 μm, Ra of the first region is 1.34 μm, and Ra of the second region is 0.82 μm.

[0153] According to Example 1 and Example 2, although the surface roughness of the first region and the second region differs depending on the types of the phosphor and the diffusion material contained in the wavelength conversion member, in any case, it is confirmed that the surface roughness of the first region is greater than the surface roughness of the second region. Therefore, when the wavelength conversion member is applied to a light-emitting device, etc., in the case where the wavelength conversion member is covered with a covering member such as a resin, by making the covering member contact with the first region of the wavelength conversion member, the adhesion between the covering member and the wavelength conversion member can be improved.

[0154] The preferred embodiments are described in detail above, but the present invention is not limited to the above embodiments, and various modifications and substitutions may be made to the above embodiments without departing from the technical scope of the present invention described in the claims.

[0155] In addition to the above-mentioned embodiment, the following additional notes are disclosed.

[0156] (Note 1)

[0157] A method for manufacturing an optical component, comprising:

[0158] A preparation step of preparing a wavelength conversion member of a polycrystalline body having a first surface and a second surface located on the opposite side of the first surface and containing phosphor particles;

[0159] A forming step of converging laser light inside the wavelength conversion component to form a modified portion inside the wavelength conversion component; and

[0160] and a cutting step of pressing the wavelength conversion member from the first surface side and cutting the wavelength conversion member with the modified portion as a starting point.

[0161] (Note 2)

[0162] The method for manufacturing an optical component as described in Supplement 1, wherein:

[0163] In the cutting step, a supporting member is arranged on the second surface side of the wavelength conversion member, and a pressing member is used to press the wavelength conversion member from the first surface side.

[0164] (Note 3)

[0165] The method for manufacturing an optical component as described in Supplement 2, wherein:

[0166] In the cutting step, the support member can be elastically deformed by the pressing.

[0167] (Note 4)

[0168] The method for manufacturing an optical component according to any one of Supplements 1 to 3, wherein:

[0169] In the forming step, the modified portion is formed at a position isolated (separated) from the first surface and the second surface.

[0170] (Note 5)

[0171] The method for manufacturing an optical component according to any one of Supplements 1 to 4, wherein:

[0172] In the forming step, the modified portion is formed in a region having a depth greater than 0 and less than or equal to 10 μm from the second surface of the wavelength conversion member.

[0173] (Note 6)

[0174] The method for manufacturing an optical component according to any one of Supplements 1 to 5, wherein:

[0175] The length of the modified portion in the depth direction of the wavelength conversion member is not less than 2% and not more than 30% of the thickness of the wavelength conversion member.

[0176] (Note 7)

[0177] The method for manufacturing an optical component according to any one of Supplements 1 to 6, wherein:

[0178] The width of the modified portion in a direction parallel to the second surface of the wavelength conversion member is 1 μm or more and 10 μm or less.

[0179] (Note 8)

[0180] The method for manufacturing an optical component according to any one of Supplements 1 to 7, wherein:

[0181] In the forming step, the modified portion is formed into a straight line shape in a plan view,

[0182] In the cutting step, the wavelength conversion member is pressed along the straight line.

[0183] (Note 9)

[0184] A light emitting device, comprising:

[0185] Light emitting element;

[0186] a plate-shaped optical component disposed on the light-emitting element; and

[0187] a covering member that exposes the upper surface of the optical member and covers the side surfaces of the optical member and the side surfaces of the light emitting element,

[0188] The optical component is a polycrystalline wavelength conversion component containing phosphor particles, and includes a first region where the particle surface of the phosphor particles is exposed and a second region where the particle cross-section of the phosphor particles is exposed at different positions in the height direction of the side surface of the wavelength conversion component.

[0189] (Note 10)

[0190] A light emitting device as described in Appendix 9, wherein:

[0191] The surface roughness of the first region is greater than the surface roughness of the second region.

[0192] (Note 11)

[0193] A light emitting device as described in Appendix 10, wherein:

[0194] The arithmetic mean roughness Ra of the surface roughness of the first region is 2.0 μm or more and 3.0 μm or less,

[0195] The second region has a surface roughness with an arithmetic mean roughness Ra of 0.5 μm or more and 1.0 μm or less.

[0196] (Note 12)

[0197] A light emitting device as described in any one of Appendixes 9 to 11, wherein:

[0198] The first region is arranged on all side surfaces of the optical component along the outer edge of the lower surface of the optical component.

Claims

1. A method for manufacturing an optical component, comprising: A preparation step of preparing a wavelength conversion member of a polycrystal containing phosphor particles, the wavelength conversion member having a first surface and a second surface located on the opposite side of the first surface; A forming step of focusing laser light inside the wavelength conversion member to form a modified portion inside the wavelength conversion member; and and a cutting step of pressing the wavelength conversion member from the first surface side and cutting the wavelength conversion member with the modified portion as a starting point.

2. The method for manufacturing an optical component according to claim 1, wherein: In the cutting step, a supporting member is arranged on the second surface side of the wavelength conversion member, and a pressing member is used to press the wavelength conversion member from the first surface side.

3. The method for manufacturing an optical component according to claim 2, wherein: In the cutting step, the support member can be elastically deformed by the pressing.

4. The method for manufacturing an optical component according to any one of claims 1 to 3, wherein: In the forming step, the modified portion is formed at a position separated from the first surface and the second surface.

5. The method for manufacturing an optical component according to any one of claims 1 to 4, wherein: In the forming step, the modified portion is formed in a region having a depth greater than 0 and less than or equal to 10 μm from the second surface of the wavelength conversion member.

6. The method for manufacturing an optical component according to any one of claims 1 to 5, wherein: The length of the modified portion in the depth direction of the wavelength conversion member is not less than 2% and not more than 30% of the thickness of the wavelength conversion member.

7. The method for manufacturing an optical component according to any one of claims 1 to 6, wherein: The width of the modified portion in a direction parallel to the second surface of the wavelength conversion member is 1 μm or more and 10 μm or less.

8. The method for manufacturing an optical component according to any one of claims 1 to 7, wherein: In the forming step, the modified portion is formed into a straight line shape in a plan view, In the cutting step, the wavelength conversion member is pressed along the straight line.

9. A light emitting device, comprising: Light emitting element; a plate-shaped optical component disposed on the light-emitting element; and a covering member that exposes the upper surface of the optical member and covers the side surfaces of the optical member and the side surfaces of the light emitting element, in, The optical component is a polycrystalline wavelength conversion component containing phosphor particles, and includes a first region where the particle surface of the phosphor particles is exposed and a second region where the particle cross-section of the phosphor particles is exposed at different positions in the height direction of the side surface of the wavelength conversion component.

10. The light emitting device according to claim 9, wherein: The surface roughness of the first region is greater than the surface roughness of the second region.

11. The light emitting device according to claim 10, wherein: The surface roughness of the first region has an arithmetic mean roughness Ra of 2.0 μm or more and 3.0 μm or less, and the surface roughness of the second region has an arithmetic mean roughness Ra of 0.5 μm or more and 1.0 μm or less.

12. The light emitting device according to any one of claims 9 to 11, wherein: The first region is arranged on all side surfaces of the optical component along the outer edge of the lower surface of the optical component.

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