Light emitting device

Abstract

A semiconductor light-emitting device according to the present invention includes a plurality of plate-shaped lead electrodes, a resin frame provided so as to embed gaps between the plurality of lead electrodes and surround the entire outer periphery of the plurality of lead electrodes, the resin frame having an opening through which the plurality of lead electrodes are exposed, and a semiconductor light-emitting element. The semiconductor light-emitting element is mounted on the plurality of lead electrodes exposed from the opening. The corners and / or the outer side surface of the resin frame have recessed portions, and the end portions of the lead electrodes are exposed inside and at positions retracted from the outer side surface of the frame.

Description

Technical Field

[0001] The present invention relates to a light emitting device, and more particularly to a light emitting device in which a semiconductor light emitting element such as a light emitting diode (LED) is mounted on a lead frame. Background Art

[0002] Conventionally, there is known a light emitting device formed by insert molding a resin body on a lead frame and cutting the lead frame with a dicing machine.

[0003] For example, Patent Document 1 discloses a method of forming a light emitting device by forming a resin molded body on a lead frame provided with a cutout portion and cutting the resin molded body and the lead frame along the cutout portion.

[0004] In addition, Patent Document 2 discloses a surface-mounted light-emitting device having a first resin molded body formed by integrally molding a light-emitting element and first and second leads, and a second resin molded body containing a phosphor covering the light-emitting element.

[0005] Prior art literature

[0006] Patent Literature

[0007] Patent Document 1: Japanese Patent Application Publication No. 2010-62272

[0008] Patent Document 1: Japanese Patent Application Publication No. 2006-156704 Summary of the invention

[0009] Problems to be solved by the invention

[0010] However, due to the influence of the cutting of the integrally molded resin and lead frame, there are problems such as separation of the resin and the lead frame, reduction in chip shear strength, and disconnection defects.

[0011] The present invention has been made in view of the above-mentioned problems, and an object of the present invention is to provide a light emitting device which can prevent peeling of a resin and a lead frame, has high chip shear strength, and is less likely to cause problems such as disconnection.

[0012] Means for solving problems

[0013] A light-emitting device according to one embodiment of the present invention comprises a plurality of plate-shaped lead electrodes, a resin frame and a semiconductor light-emitting element, wherein the resin frame is arranged in a manner so as to bury the gaps between the plurality of lead electrodes and surround the entire periphery of the plurality of lead electrodes, and the resin frame has an opening through which the plurality of lead electrodes are exposed; the semiconductor light-emitting element is mounted on the plurality of lead electrodes exposed from the opening, the corners and / or outer side surfaces of the frame have recesses, and the ends of the lead electrodes are exposed inside and at a position retreated from the outer side surfaces of the frame. BRIEF DESCRIPTION OF THE DRAWINGS

[0014] Figure 1A 1 is a conceptual diagram showing a main part of a light emitting device 10 according to a first embodiment of the present invention, and is a perspective view when viewed from the upper surface side.

[0015] Figure 1B 1 is a conceptual diagram showing a main part of a light emitting device 10 according to a first embodiment of the present invention, and is a perspective view when viewed from the bottom surface side.

[0016] Figure 2A It is a diagram showing the upper surface of the light emitting device 10 .

[0017] Figure 2B It is along Figure 2A A cross-sectional view is shown along line AA.

[0018] Figure 2C is from Figure 2A Side view when viewed from direction B as shown.

[0019] Figure 3 FIG. 1 is a diagram showing the upper surface of the light emitting device 10 before the covering member 35 is filled.

[0020] Figure 4 The figure shows the back surface (mounting surface mounted on the circuit board) of the light emitting device 10 .

[0021] Figure 5 It is a partially enlarged perspective view showing the recessed portion 23 in an enlarged manner.

[0022] Figure 6 This is a partially enlarged perspective view showing an enlarged view of a solder joint portion when the light emitting device 10 is mounted on the wiring 41 of the circuit board 40 using the solder 45 .

[0023] Figure 7 It is a partially enlarged perspective view showing an arc-shaped (fan-shaped) recessed portion 23 in an enlarged manner as a modified example of the present embodiment.

[0024] Figure 8 1 is a flowchart showing a method for manufacturing the light emitting device 10 .

[0025] Fig.9A It is a plan view showing manufacturing steps S1 and S2 of the light emitting device 10 .

[0026] Fig. 9B It is a plan view showing the manufacturing step S3 of the light emitting device 10 .

[0027] Fig. 9C It is a plan view showing the manufacturing step S4 of the light emitting device 10 .

[0028] Fig.9D It is a plan view showing the manufacturing step S5 of the light emitting device 10 .

[0029] Fig.9E It is a plan view showing the manufacturing steps S6 and S7 of the light emitting device 10 .

[0030] Fig.9F It is a plan view showing the manufacturing step S8 of the light emitting device 10 .

[0031] Figure 9G It is a plan view showing the manufacturing step S9 of the light emitting device 10 .

[0032] Fig. 10A It is a schematic plan view showing an enlarged view of the intersection X of the lead frame 12 .

[0033] Fig. 10B It is a cross-sectional view showing a cross section of the intersection X in step S4 and step S5.

[0034] Fig. 10C It is a diagram showing a removed region RC of the lead frame 12 when the arc-shaped recessed portion 23 is formed. DETAILED DESCRIPTION

[0035] The preferred embodiments of the present invention are described below. However, the embodiments may be appropriately changed and combined. In addition, in the following description and drawings, substantially the same or equivalent parts are marked with the same reference symbols for description.

[0036] [First embodiment]

[0037] Figure 1A and Figure 1B 1 is a conceptual diagram showing the main part of the light emitting device 10 according to the first embodiment of the present invention, and shows a perspective view when viewed from the upper surface side and the lower surface side. The light emitting device 10 has a plurality of lead electrodes (hereinafter, also referred to as leads) and a resin frame 22. The following describes a case where the light emitting device 10 has two leads 12A and 12B, but the light emitting device 10 may also have three or more leads.

[0038] like Figure 1AAs shown, the resin frame 22 is provided with an opening 25 , a light emitting element is mounted inside the opening 25 , and the opening 25 is filled with a covering member 35 .

[0039] like Figure 1B As shown, recessed portions 23 are provided at four corners on the back side of the light emitting device 10 , into which the corners of the lead 12A and the lead 12B are exposed.

[0040] Figure 2A is a diagram showing the upper surface of the light emitting device 10, Figure 2B It is along Figure 2A The cross-sectional view formed by the AA line shown. Figure 2C is from Figure 2A The side view when viewed from direction B is shown. Figure 3 1 is a diagram showing the upper surface of the light emitting device 10 before the covering member 35 is filled. Figure 4 This is a diagram showing the back side (mounting surface on a circuit board) of the light emitting device 10 .

[0041] (1) Resin frame and leads

[0042] The light emitting device 10 has a plate-shaped lead 12A (first electrode) and a lead 12B (second electrode). The core material (core material) of the lead 12A and the lead 12B is made of copper (Cu), which is a metal with good etching properties (corrosive properties), and nickel / gold (Ni / Au), which is a corrosion-resistant metal, is plated on the surface.

[0043] As the core material of the lead wire 12A and the lead wire 12B, aluminum (Al), an iron alloy such as iron-nickel-cobalt (Fe—Ni—Co), or the like, which is a corrosive metal, can be used.

[0044] In addition, a corrosion-resistant metal such as platinum (Pt), palladium (Pd), or rhodium (Rh) may be used for the surfaces of the lead wires 12A and 12B.

[0045] In this specification, the lead pair 12 (hereinafter also referred to as the lead frame 12 of the light emitting device 10) composed of the lead 12A and the lead 12B is separated from each other by a gap (slit) 12G between the lead 12A and the lead 12B and is formed on a substantially same plane. It should be noted that, hereinafter, when the lead 12A and the lead 12B are not particularly distinguished, they are simply referred to as leads.

[0046] A resin frame 22 is embedded in the leads 12A and 12B, and is provided to fill the gaps between the leads and surround the entire periphery of the leads to form a resin package. That is, the leads are not exposed on the outer side of the resin frame 22 and on the plane substantially the same as the outer side.

[0047] For example, titanium oxide particles may be added to silicone resin, epoxy resin, or acrylic resin to form the resin frame 22 (white resin). Alternatively, carbon black may be added to silicone resin, epoxy resin, or acrylic resin to form the resin frame 22 (black resin).

[0048] like Figure 1A and Figure 1B As shown, the resin frame 22 has a rectangular shape (rectangular column shape), and has two outer side surfaces 22A parallel to each other and two outer side surfaces 22B perpendicular to the outer side surfaces 22A. In addition, recesses 23 are provided at the four corners of the back side of the resin frame 22 so that the corners of the leads 12A and 12B are exposed inside.

[0049] It should be noted that if Figure 2C As shown in FIG. 1 , thin-walled portions 12T are provided at outer edges WS of the leads 12A and 12B except for the corners. Figure 4 As shown, thin portion 12T is provided at edge WO where lead 12A and lead 12B face each other. The edge of lead 12A and lead 12B is covered with resin of resin frame 22 by thin portion 12T, so that the lead can be prevented from peeling off from resin frame 22 during cutting or the like.

[0050] The thin-walled portion 12T is formed by cutting at a depth of, for example, about 50% of the thickness of the lead 12A and the lead 12B by so-called half etching.

[0051] (2) Recessed portion of resin frame

[0052] The back side of the light emitting device 10 (i.e., the back side of the resin frame 22) is placed on a circuit board or the like, and the light emitting device 10 is mounted using solder or the like. Figure 1B and Figure 4 As shown, recessed portions 23 are provided at four corners of the back side (mounting surface side) of the resin frame 22 .

[0053] As described above, the resin frame 22 is provided so as to fill the gaps between the leads and surround the entire periphery of the leads, and the ends of the leads are exposed inside the recesses 23 .

[0054] (Rectangular recess)

[0055] Figure 5 2 is a partially enlarged perspective view showing the recess 23. In the recess 23, the resin frame 22 is recessed from the outer side surfaces 22A and 22B, and the rectangular corners of the lead 12A are exposed in the recess 23. It should be noted that although the recess 23 in which the corners of the lead 12A are exposed is described, the same is true for the recess 23 in which the corners of the lead 12B are exposed.

[0056] Specifically, in the recess 23, the end face 12E of the corner of the lead 12A is formed to be located at a position retreated inwardly from the outer side face 22A and the outer side face 22B of the resin frame 22. That is, the resin frame 22 has a rectangular (L-shaped) bottom face 22H in the recess 23, and the end face 12E of the lead 12A is located at a position retreated inwardly from the outer side face 22A and the outer side face 22B by a distance LS ( Figure 4 ).

[0057] In addition, on both sides of the corner of the lead 12A, a protective solder fillet 22G is formed as a partition wall of the resin frame 22. The protective solder fillet 22G and the bottom surface 22H of the resin frame 22 define a rectangular space for accommodating the solder fillet in the recess 23. That is, the recess 23 functions as a rectangular accommodating portion for accommodating the solder fillet.

[0058] As described later, when the bottom surface 22H is formed by etching the lead 12A, the depth (height) of the bottom surface 22H and the protection fillet 22G is substantially the same as the thickness of the lead 12A.

[0059] It should be noted that, when the recess 23 is formed by etching the core material 12C of the lead frame 12 and the lead frame surface layer (plating layer) is milled by the etching, etc., Figure 4 and Figure 5 As shown, the outer peripheral portion 22R1 of the rear surface 22R of the resin frame 22 is formed slightly lower than the rear surface 22R and has a step 22S with respect to the rear surface 22R by this processing.

[0060] In this case, even if there are burrs on the lower end of the outer surface of the resin frame 22 of the light emitting device 10, the light emitting device 10 can be mounted without floating from the circuit board. Therefore, the die shear strength is high and the mounting can be performed without compromising heat dissipation and reliability.

[0061] Furthermore, when mounted on a wiring having the same size as the light emitting device 10 , even if there are burrs on the periphery of the wiring, the light emitting device 10 can be prevented from tilting, thereby preventing the optical axis from shifting.

[0062] It should be noted that the back surface 22R of the resin frame 22 may not have the step 22S and may be a flat surface. For example, the recess 23 may be formed by removing only the surface layer (plating layer) of the lead frame 12 using a micro milling cutter or the like so as not to generate the step 22S.

[0063] Figure 6 This is a partially enlarged perspective view showing an enlarged view of a solder joint portion when the light emitting device 10 is mounted on the wiring (pad) 41 of the circuit board 40 using solder 45 .

[0064] Since the fillet of the solder 45 is formed in the recess 23 , even when the light emitting device 10 is mounted on a wiring having a size approximately the same as that of the light emitting device 10 , a high die shear strength can be maintained.

[0065] (arc-shaped concave portion)

[0066] Figure 7 This is a partially enlarged perspective view showing an enlarged view of a concave portion 23 as a modified example of the present embodiment. In the present modified example, an arc-shaped (fan-shaped) concave portion 23 is formed.

[0067] More specifically, in the recess 23 , the bottom surface 22H of the resin frame 22 has an arc shape (or a quarter of a circle), and the end surface (side surface) 12E of the end of the lead 12A has a cylindrical side surface shape.

[0068] In addition, a partition wall, that is, a protective solder foot 22G, is formed on both sides of the end of the lead 12A, which extends from the resin frame 22. The protective solder foot 22G and the bottom surface 22H of the resin frame 22 define a quarter cylindrical space for accommodating the solder foot in the recess 23. That is, the arc-shaped recess 23 functions as a receiving portion for accommodating the solder foot. Such a protruding protective solder foot 22G clamps the solder foot in a manner that a part of the solder foot is necked, thereby improving the chip shear strength.

[0069] Similar to the case of the rectangular recess 23 , the fillet of the solder 45 is formed in the recess 23 . Therefore, even when the device is mounted on a wiring having a size similar to that of the light emitting device 10 , a high die shear strength can be maintained.

[0070] It should be noted that in the above description, the recess 23 of the resin frame 22 is described as a rectangular or arc-shaped recess, but the recess 23 only needs to be formed so that the end face of the lead is exposed inside and has a space for accommodating a solder fillet connected to the end face of the lead.

[0071] In addition, the recess 23 is provided at the corner of the light emitting device 10 (i.e., the resin frame 22) as an example, but the present invention is not limited to this form. For example, the recess may also be provided at the side of the light emitting device 10. Figure 4 For illustration, the portion of the connection portion 12AJ or 12BJ adjacent to the lead 12A or the lead 12B connected to the lead may be formed as a rectangular (eg, I-shaped) recess 23. Therefore, the recess 23 may be provided at the corner and / or side of the light emitting device 10.

[0072] (3) Internal structure of light-emitting device and light-emitting element

[0073] like Figure 3As shown, the resin frame 22 has an opening 25 (first opening) as the inner region of the frame, and a part of the surface of the lead 12A and the lead 12B is exposed from the opening 25. In the opening 25, a semiconductor light emitting element (hereinafter referred to as a light emitting element) 30 is mounted.

[0074] The light emitting element 30 in this embodiment is composed of an LED (Light Emitting Diode) 31 as a light source element and a phosphor 32 as an optical component provided on the light source element. However, the light source element may also be a laser diode (LD) or the like. In addition, the optical component is not limited to the phosphor. In addition, the optical component may not be provided.

[0075] More specifically, for example, the lead 12A is an anode electrode, the lead 12B is a cathode electrode, the p-electrode of the LED 31 is connected and placed on the lead 12A, and the n-electrode of the LED 31 is connected to the lead 12B via a bonding wire.

[0076] In addition, a plate-shaped phosphor 32 is provided on LED31. Alternatively, the light-emitting element 30 may also have an optical component such as a translucent body provided on LED31. As the phosphor, there is no particular limitation, for example, various phosphors such as YAG (yttrium aluminum garnet), LuAG (lutetium aluminum garnet), GYAG (gadolinium aluminum garnet), α, β sialon, SCASN, CASN, KFS, etc. can be appropriately used. In addition, in the case of having an optical component such as a translucent body, a nanoparticle light conversion component such as a cadmium selenide system (CdSn system), an indium phosphide system (InP system) or an indium nitride system (InN system) can also be arranged on the upper surface (light emitting surface) of LED31. In particular, if the nanoparticle light conversion component is arranged within a hundred or several dozen nm from the upper surface of LED31, quantum coupling improves the light conversion efficiency, so it is a preferred form.

[0077] Furthermore, a protection element 33 as a Zener diode is bonded and mounted on the lead 12B exposed from the opening 25. The other electrode of the protection element 33 is connected to the lead 12A via a bonding wire.

[0078] It should be noted that a varistor or the like may be used as the protection element 33. Alternatively, a passive element such as a capacitor, a resistor, or a light receiving element may be provided.

[0079] The opening 25 of the resin frame 22 is filled with a space around the light emitting element 30 by a covering member 35 which is a sealing resin or a covering resin. Figure 3 In order to explain the internal structure, the cover member 35 is not shown. In addition, the surface of the light emitting element 30 (that is, the surface of the fluorescent body 32) is exposed from the cover member 35.

[0080] like Figure 3 As shown, the resin frame 22 has a rectangular shape in a plan view and has a rectangular columnar opening 25 as the inner region of the frame. It should be noted that the opening 25 is not limited to a rectangular columnar shape, and may also have a cylindrical shape, a truncated cone shape, or the like.

[0081] (4) Method for manufacturing light emitting device

[0082] Hereinafter, a method for manufacturing the light emitting device 10 will be described in detail with reference to flowcharts and drawings.

[0083] Figure 8 is a flowchart showing a method for manufacturing the light emitting device 10. In addition, Figures 9A to 9G It is a top view showing each process. It should be noted that Fig.9A , Fig. 9B , Figures 9E to 9G It is a top view. Fig. 9C and Fig. 9B In each figure, in order to ensure the clarity of the drawings, the cutting line CL when dividing each device is indicated by a solid line, and the component mounting portion is indicated by a dotted line.

[0084] (S1) Mold-cutting process

[0085] The copper (Cu) plate constituting the lead frame 12 is punched out by a die to form a punched portion 12N ( Fig.9A ). It should be noted that a resist mask may be formed and demolding may be performed by etching instead of punching. In addition, when forming the thin-walled portion 12T of the outer edge portion of the lead frame 12, a resist mask constituting a partial opening of the thin-walled portion 12T is formed before forming the punched portion 12N, and etching is performed to thin the thin-walled portion.

[0086] (S2) Plating process

[0087] Nickel (Ni) and gold (Au) are plated on the upper surface of the lead frame 12 in sequence by electrolytic plating (Ni / Au plating) ( Fig.9A ).

[0088] (S3) Frame Forming Process

[0089] Next, a resin frame body 22 ( Fig. 9B The resin frame 22 has an opening 25 as an inner region of the resin frame 22 , and a part of the surface of the lead 12A and the lead 12B is exposed from the opening 25 .

[0090] (S4) Plating removal process

[0091] Fig. 10A The cross point X of the cutting line CL of the lead frame 12 is enlarged and shown (see Fig. 9C , 9D ), Fig. 10B It is a cross-sectional view showing a cross section of the intersection X in step S4 and step S5.

[0092] First, the plating layer 12P on the surface of the lead frame 12 is removed by cutting (rectangular teeth) along the cutting line CL with a certain width (plating removal portion RB). Fig. 10B , above). The core material 12C (Cu) is exposed in the plating removal portion RB ( Fig. 9C ).

[0093] It should be noted that, at this time, the outer peripheral portion 22R1 of the back surface 22R of the resin frame 22 is also removed to form a step 22S slightly lower than the back surface 22R (see Figure 5 ).

[0094] In addition, the plating layer 12P may be removed by milling or the like instead of cutting.

[0095] (S5) Lead frame removal process

[0096] Next, the core material 12C (Cu) of the lead frame 12 at the plated layer removal portion is etched using an etching solution ( Fig. 10B , middle picture).

[0097] Next, the plating layer 12P on the resin frame 22 side is removed by air jetting ( Fig. 10B , below). As a means of removal, there are also methods such as water spraying and sandblasting. It should be noted that the plating layer 12P on the side of the resin frame 22 may also remain. In this case, this step can be skipped. When the light emitting device 10 is soldered to the circuit board, the remaining plating layer 12P acts as a guide wall for the solder.

[0098] By etching the lead frame 12 at the intersection X, a rectangular recess 23 ( Figure 5 )( Fig.9D ).

[0099] Fig. 10C 2 shows the removed area RC of the lead frame 12 when the arc-shaped recessed portion 23 is formed. By removing the intersection portion X of the lead frame 12 into a circular shape, it is possible to form the recessed portion 23 ( Figure 7 ).

[0100] (S6) Component mounting process

[0101] Gold-tin (Au—Sn) paste solder is printed on the component mounting portion, and then the light emitting element 31 and the protection element 33 are mounted on the solder.

[0102] Reflow (heating at 300°C) is performed to melt and solidify the gold-tin solder, and components are mounted.

[0103] The light emitting element 31 and the protection element 33 are wire-bonded using gold wires to mount the elements ( Fig.9E ).

[0104] (S7) Phosphor Plate Mounting Step

[0105] Silicone resin as a light-transmitting adhesive material is applied to the light-emitting surface of the light-emitting element 31. Next, the phosphor 32 is mounted on the light-emitting element 31. Then, the phosphor 32 is bonded by pre-curing at 180°C. Fig.9E ).

[0106] (S8) Covering component filling step

[0107] Next, the opening 25 of the resin frame 22 is filled with a covering resin composed of a silicone resin containing titanium oxide particles, and heated at 150° C. for 3 hours to cure the resin, thereby forming a covering member 35 ( Fig.9F ).

[0108] (S9) Singulation process

[0109] Finally, a dicing machine is used to cut each element unit into individual pieces. Through the above steps, the light emitting device 10 ( Figure 9G ).

[0110] According to the present invention, in the lead frame removing step ( S5 ), the lead frame 12 is cut by etching, and the lead frame 12 is not cut in the singulation step ( S9 ).

[0111] When the lead frame is cut when each light-emitting device is singulated, the resin frame may be peeled off due to the cutting stress acting on the lead frame. However, according to the present invention, since the cut portion of the lead frame 12 is removed in advance, the lead frame 12 and the resin frame 22 will not be peeled off. Therefore, a light-emitting device with high chip shear strength and less prone to problems such as disconnection can be provided.

[0112] As described in detail above, according to the present invention, it is possible to provide a light emitting device that prevents separation of a frame body and a lead frame, has a high die shear strength of solder bonding, and is less likely to cause problems such as disconnection defects.

[0113] Explanation of symbols

[0114] 10: Light-emitting device

[0115] 12: Lead frame

[0116] 12A, 12B: Lead wire

[0117] 12E: End face of lead wire

[0118] 22: Resin frame

[0119] 22A, 22B: Outer side

[0120] 22G: Protective solder pin

[0121] 22H: Bottom of the recess

[0122] 22R: Back side of resin frame 22

[0123] 22R1: Outer periphery of the back side 22R

[0124] 23: concave part

[0125] 30: Light-emitting element

[0126] 31: LED

[0127] 32: Phosphor

[0128] 35: Covering parts

[0129] 40: Circuit board

[0130] 45: Solder

[0131] CL: Cut Line

[0132] RB: Plating removal part.

Claims

1. A semiconductor light emitting device, characterized in that: The invention comprises a plurality of plate-shaped lead electrodes, a resin frame and a semiconductor light emitting element. wherein the resin frame is provided in a manner of burying the gaps between the plurality of lead electrodes and surrounding the entire periphery of the plurality of lead electrodes, and the resin frame has an opening through which the plurality of lead electrodes are exposed; The semiconductor light emitting element is mounted on the plurality of lead electrodes exposed from the opening. The frame body has a recessed portion at a corner and / or an outer side surface, and the end portion of the lead electrode is exposed inside and at a position retreated from the outer side surface of the frame body.

2. The semiconductor light emitting device according to claim 1, characterized in that: The end portion of the lead electrode exposed in the recess has a rectangular shape.

3. The semiconductor light emitting device according to claim 1, characterized in that: The end portion of the lead electrode exposed in the recess has an arc shape.

4. The semiconductor light emitting device according to claim 1, characterized in that: The recess has a height corresponding to the thickness of the lead electrode.

5. The semiconductor light emitting device according to claim 1, characterized in that: The rear surface of the resin frame has an outer peripheral portion that is lower than the rear surface of the resin frame.

6. The semiconductor light emitting device according to claim 1, characterized in that: The core material of the lead electrode is a corrosive metal, and the surface layer of the lead electrode is a corrosion-resistant metal.

7. The semiconductor light emitting device according to claim 6, characterized in that: The core material of the lead electrode is a metal including any one or more of copper (Cu), aluminum (Al), and iron (Fe), and the surface layer of the lead electrode is a metal including any one or more of gold (Au), platinum (Pt), palladium (Pd), and rhodium (Rh).

8. The semiconductor light emitting device according to any one of claims 1 to 6, characterized in that: The resin frame has a partition wall that separates the end portion of the lead electrode exposed in the recess from an outer side surface of the resin frame.

Images