Unmanned sensor demisting film production process

Abstract

The invention provides an unmanned sensor demisting film production process. The unmanned sensor demisting film production process comprises the following steps: S1, selecting a DT silicon-aluminum substrate to replace a common sodium-calcium substrate; s2, an SIO2 transition layer is plated on the surface of the DT silicon-aluminum substrate, the film thickness ranges from 10 nm to 25 nm, and the value of the refractive index n ranges from 1.46 to 1.49; s3, the surface of the SIO2 transition layer is coated with a BM shading layer with the thickness ranging from 1.5 micrometers to 2.0 micrometers, and after exposure, development and curing are conducted, a BM black frame with the preset shape on the periphery is left; s4, plating an anti-reflection layer on the surface of the BM shading layer; and S5, plating a transparent conductive heating layer on the surface of the anti-reflection layer. According to the invention, the DT silicon-aluminum substrate is selected to replace a common sodium-calcium substrate, so that the stress layer and the stress value are higher; due to the SIO2 transition layer, the adhesive force of the BM on the plain glass substrate is greatly improved; the SINx high-folding layer and the SI02 low-folding layer can reduce reflection and increase transmittance; and the ITO transparent conductive layer can uniformly heat, so that the demisting effect is better.

Description

Technical Field

[0001] The present invention mainly relates to the technical field of optical film production and manufacturing, and specifically relates to a production process of a defogging film for an unmanned driving sensor. Background Art

[0002] As the times progress, autonomous driving technology has become one of the trends people are studying in real life. The development of autonomous driving and electric vehicles is closely related, as both technologies aim to change the traffic environment towards a more sustainable, efficient and connected future. However, since electric vehicles do not have internal combustion engines, the temperature of the engine cover is lower, and in cold environments with frost or fog, the reliability and functionality of sensors installed near the engine cover may be affected. Therefore, keeping the sensor's line of sight clear and unobstructed is crucial to avoid potential dangers in various driving scenarios. To address these issues, manufacturers use transparent heaters to quickly remove water vapor or fog formed on the sensor cover.

[0003] Since the sensor is exposed to the outside of the car and faces various harsh environments, the conventional design has the following defects: ① The hardness of the ordinary sodium calcium substrate (stress layer: 8-10μm, stress value: 450-600MPa) cannot meet such requirements, or the sensor will burst in bad weather; ② The adhesion stability of BM ink on plain glass is poor; ③ The film layer of the IM1 conventional film system design has poor adhesion on large-area BM blocks, and the film layer eventually falls off on the BM block as the film layers are stacked; ④ The conductive layer on the metal block cannot be etched and protected, and the metal block becomes insulated as the film layers are stacked; ⑤ The sensor requires high transmittance, and the transmittance of the conventional design cannot meet the requirements. Summary of the invention

[0004] 1. Technical problem to be solved by the invention: The present invention provides a production process for a demisting film for an unmanned driving sensor, which is used to solve the technical problems existing in the above-mentioned background technology.

[0005] 2. Technical solution: In order to achieve the above object, the technical solution provided by the present invention is: a production process of a defogging film for an unmanned driving sensor, characterized in that it comprises the following steps: S1: Use DT silicon aluminum substrate to replace ordinary soda calcium substrate; S2: a SIO2 transition layer is plated on the surface of the DT silicon aluminum substrate, the film thickness is between 10-25nm, and the refractive index n value is between 1.46 and 1.49; S3: coating a BM light shielding layer with a thickness of 1.5-2.0 um on the surface of the SIO2 transition layer, and leaving a BM black frame with a predetermined shape around it after exposure and development curing; S4: coating an anti-reflection layer on the surface of the BM light shielding layer; S5: coating a transparent conductive heating layer on the surface of the anti-reflection layer.

[0006] Furthermore, the anti-reflection layer includes an IM layer, the IM layer includes a SINx high fold layer and a SI02 low fold layer, the SINx high fold layer has a thickness between 18-35 nm, and a refractive index n value between 1.85 and 2.0, the SI02 low fold layer is sputtered between the transparent conductive heating layer and the SI02 low fold layer, and the layer thickness is between 20-40 nm, and the refractive index n value can be between 1.46 and 1.49.

[0007] Furthermore, an Nbox high-folding layer is sputtered between the BM light-shielding layer and the SINx high-folding layer, the Nbox high-folding layer has a thickness between 2-5 nm, and a refractive index n value between 2.1 and 2.3.

[0008] Furthermore, the transparent conductive heating layer includes an ITO transparent conductive layer with a thickness between 30 and 60 nm. The material of the ITO transparent conductive layer is an n-type semiconductor material with high conductivity and high light transmittance. The ITO transparent conductive layer is sputtered with an SI02 low-fold layer, and wires are led out from both ends.

[0009] Furthermore, a metal conductive layer is formed on the surface of the ITO transparent conductive layer. The metal conductive layer is developed and etched into two strip-shaped metal blocks through yellow light development. The two metal blocks are opposite to each other on the left and right sides and have an area of ​​about 8mm*125mm.

[0010] Furthermore, a SiONx film layer is sputtered on the surface of the Metal conductive layer, and the SiONx on the metal block is etched by etching paste to expose the metal block. The thickness of the SiONx film layer can be between 60 and 100 nm, and the refractive index n value is between 1.65 and 1.75.

[0011] Furthermore, an AR film layer is sputtered on the surface of the SiONx film, and the thickness of the AR layer is between 200 and 300 nm.

[0012] Furthermore, a 0C2 protective layer is plated on the entire panel, and after exposure, development and curing, the 0C2 is left to expose the metal block, and the film thickness of the 0C2 protective layer is between 1.5 and 2.5 um.

[0013] Furthermore, the DT silicon-aluminum substrate is coated with silver paste, and the silver paste is connected to the metal block and the flexible circuit board.

[0014] 3. Beneficial effects: Compared with the prior art, the technical solution provided by the present invention has the following beneficial effects: the DT silicon aluminum substrate is used to replace the ordinary sodium calcium substrate, the stress layer and stress value are higher, it is not easy to be damaged by collision, and it will not burst in bad weather; SIO2 transition layer greatly improves the adhesion of BM on the plain glass substrate, playing a key role in the subsequent process stacking; SINx high fold layer and SI02 low fold layer can reduce reflection and increase transmittance; The ITO transparent conductive layer can generate heat evenly, thus replacing the traditional heating module and achieving better defogging effect. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] Figure 1 It is a schematic diagram of the working principle structure of the present invention. DETAILED DESCRIPTION

[0016] To facilitate understanding of the present invention, the present invention will be described more comprehensively below with reference to the relevant drawings. Several embodiments of the present invention are shown in the drawings. However, the present invention can be implemented in many different forms and is not limited to the embodiments described herein. On the contrary, the purpose of providing these embodiments is to make the disclosure of the present invention more thorough and comprehensive.

[0017] In the description of the present invention, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "page", "bottom", "inside", "outside", "clockwise", "counterclockwise" and the like indicating orientations or positional relationships are based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the referred device or element must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as limiting the present invention.

[0018] In addition, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first" and "second" may explicitly or implicitly include one or more of the features. In the description of the present invention, the meaning of "plurality" is two or more, unless otherwise clearly and specifically defined.

[0019] In the present invention, unless otherwise clearly specified and limited, the terms "installed", "connected", "connected", "fixed", "provided with", etc. should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection, or it can be indirectly connected through an intermediate medium, or it can be internal communication between two components. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances. Example

[0020] Refer to the attached Figure 1 A production process of a defogging film for an unmanned driving sensor, characterized in that it comprises the following steps: S1: Use DT silicon aluminum substrate to replace ordinary soda-lime substrate. Compared with traditional soda-lime substrate, DT silicon aluminum substrate has higher stress layer and stress value, which is not only not easy to be damaged by collision, but also will not burst in bad weather; S2: A SIO2 transition layer is plated on the surface of the DT silicon aluminum substrate, with a film thickness between 10-25nm and a refractive index n value between 1.46 and 1.49, which can not only improve the problem of substrate ion precipitation, but also greatly improve the adhesion of BM on the plain glass substrate, playing a key role in the subsequent process stacking; S3: Coating a BM light shielding layer with a thickness of 1.5-2.0 um on the surface of the SIO2 transition layer, and leaving a BM black frame with a predetermined shape around it after exposure, development and curing. The shape of the BM black frame can be obtained by exposure and development of MASK according to the pattern selected by the customer; S4: coating an anti-reflection layer on the surface of the BM light-shielding layer to reduce reflection and increase transmittance; S5: A transparent conductive heating layer is plated on the surface of the anti-reflection layer to heat and achieve a defogging effect.

[0021] The anti-reflection layer includes an IM layer, and the IM layer includes a SINx high-fold layer and a SI02 low-fold layer. The SINx high-fold layer has a thickness between 18-35 nm, and a refractive index n value between 1.85 and 2.0. The SI02 low-fold layer is sputtered between the transparent conductive heating layer and the SI02 low-fold layer, and the layer thickness is between 20-40 nm, and the refractive index n value can be between 1.46 and 1.49.

[0022] Since the IM layer has poor adhesion on the BM, an Nbox high-fold layer is sputtered between the BM light-shielding layer and the SINx high-fold layer to improve the adhesion between IM1 and BM. The thickness of the Nbox high-fold layer is between 2-5nm, and the refractive index n value is between 2.1 and 2.3.

[0023] The transparent conductive heating layer includes an ITO transparent conductive layer with a thickness between 30 and 60 nm. The material of the ITO transparent conductive layer is an n-type semiconductor material with high conductivity and high light transmittance. The ITO transparent conductive layer is sputtered with an SI02 low-folding layer, and wires are led out from both ends. After power is turned on, the entire ITO transparent conductive layer can generate heat evenly, thereby replacing the traditional heating module. Similarly, the heating speed of the coating can be adjusted by controlling the thickness, voltage, current and other parameters of the ITO transparent conductive layer. It should be noted that the entire surface of the ITO transparent conductive layer is not etched with patterns.

[0024] A Metal conductive layer is made on the surface of the ITO transparent conductive layer. The Metal conductive layer is developed by yellow light and etched into two strip-shaped metal blocks. The two metal blocks are opposite to each other on the left and right, and the area is about 8mm*125mm. Its function is to control the current to flow in a certain direction on the ITO transparent conductive layer, so that the two wire ends can be set on the same side of the DT silicon aluminum substrate, which simplifies the structure and reduces the cost.

[0025] The surface of the Metal conductive layer is sputtered with a SiONx thin film layer, the purpose of which is to enhance transmittance. The thickness of the SiONx thin film layer can be between 60 and 100 nm, and the refractive index n value is between 1.65 and 1.75. The SIONx on the metal block is etched by etching paste to expose the metal block to avoid insulation from being unable to conduct electricity due to covering the SIONx film layer. At the same time, a strippable glue is screen-printed on the metal block for regional protection.

[0026] An AR film layer is sputtered on the surface of the SiONx film for the purpose of enhancing transmittance. The thickness of the AR layer is between 200 and 300 nm.

[0027] A layer of OC2 protective layer is plated on the entire panel, and after exposure, development and curing, the OC2 is left to expose the metal block, and the thickness of the OC2 protective layer is between 1.5 and 2.5 um.

[0028] The DT silicon-aluminum substrate is coated with silver paste, which is connected to the metal block and the flexible circuit board. The silver paste is used to increase the conductivity of the metal block. When the flexible circuit board is energized, the silver paste and the metal block area will be connected, and the current will bypass the insulating area on the ITO transparent conductive layer to form a loop. The ITO transparent conductive layer is energized through the wire structure. After energization, the ITO transparent conductive layer can heat evenly, and finally achieve a defogging effect.

[0029] The optical comparison of the visual area of ​​the products with different film layer designs is as follows:

[0030] The above-described embodiments only express a certain implementation mode of the present invention, and the description thereof is relatively specific and detailed, but it cannot be understood as limiting the patent scope of the present invention. It should be pointed out that, for ordinary technicians in this field, several modifications and improvements can be made without departing from the concept of the present invention, which all belong to the protection scope of the present invention. Therefore, the protection scope of the patent of the present invention shall be based on the attached claims.

[0031] It should be noted that the above contents belong to the technical cognition scope of the inventor. Since the technical contents in this field are vast and too complicated, the above contents of this application do not necessarily constitute prior art.

Claims

1. A production process for defogging film of unmanned driving sensor, characterized in that: The following steps are involved: S1: Use DT silicon aluminum substrate to replace ordinary soda calcium substrate; S2: a SIO2 transition layer is plated on the surface of the DT silicon aluminum substrate, the film thickness is between 10-25nm, and the refractive index n value is between 1.46 and 1.49; S3: coating a BM light shielding layer with a thickness of 1.5-2.0 um on the surface of the SIO2 transition layer, and leaving a BM black frame with a predetermined shape around it after exposure and development curing; S4: coating an anti-reflection layer on the surface of the BM light shielding layer; S5: coating a transparent conductive heating layer on the surface of the anti-reflection layer.

2. The process for producing a defogging film for an unmanned driving sensor according to claim 1, characterized in that: The anti-reflection layer includes an IM layer, and the IM layer includes a SINx high-fold layer and a SI02 low-fold layer. The SINx high-fold layer has a thickness between 18-35 nm, and a refractive index n value between 1.85 and 2.

0. The SI02 low-fold layer is sputtered between the transparent conductive heating layer and the SI02 low-fold layer, and the layer thickness is between 20-40 nm, and the refractive index n value can be between 1.46 and 1.

49.

3. The production process of a defogging film for an unmanned driving sensor according to claim 2, characterized in that: An Nbox high-fold layer is sputtered between the BM light-shielding layer and the SINx high-fold layer. The Nbox high-fold layer has a thickness between 2 and 5 nm and a refractive index n value between 2.1 and 2.

3.

4. The production process of a defogging film for an unmanned driving sensor according to claim 2, characterized in that: The transparent conductive heating layer includes an ITO transparent conductive layer with a thickness between 30 and 60 nm. The material of the ITO transparent conductive layer is an n-type semiconductor material with high conductivity and high light transmittance. The ITO transparent conductive layer is sputtered with a SI02 low-fold layer, and wires are led out from both ends.

5. The production process of a defogging film for an unmanned driving sensor according to claim 4, characterized in that: A metal conductive layer is made on the surface of the ITO transparent conductive layer. The metal conductive layer is developed and etched into two strip-shaped metal blocks through yellow light development. The two metal blocks are opposite to each other on the left and right and have an area of ​​about 8mm*125mm.

6. The process for producing a defogging film for an unmanned driving sensor according to claim 5, characterized in that: The surface of the metal conductive layer is sputtered with a SiONx film layer, and the SiONx on the metal block is etched by etching paste to expose the metal block. The thickness of the SiONx film layer can be between 60 and 100 nm, and the refractive index n value is between 1.65 and 1.

75.

7. The process for producing a defogging film for an unmanned driving sensor according to claim 6, characterized in that: An AR film layer is sputtered on the surface of the SiONx film, and the thickness of the AR layer is between 200 and 300 nm.

8. A process for producing a defogging film for an unmanned driving sensor according to any one of claims 1 to 7, characterized in that: A layer of OC2 protective layer is plated on the entire panel, and after exposure, development and curing, the OC2 is left to expose the metal block, and the thickness of the OC2 protective layer is between 1.5 and 2.5 um.

9. The process for producing a defogging film for an unmanned driving sensor according to claim 8, characterized in that: The DT silicon-aluminum substrate is coated with silver paste, and the silver paste is connected to the metal block and the flexible circuit board.

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