Method of optical proximity correction for metal line and via layout and related apparatus

Abstract

The application relates to a metal line and via layout optical proximity effect correction method and related equipment, which comprises the following steps: obtaining an original metal line and via layout, wherein the direction perpendicular to the extension direction of the interconnection metal line in the plane of the interconnection metal line layer is the width direction, the metal line adjacent to the interconnection metal line in the width direction in the metal line layer is an influence metal line, the influence metal line comprises an influence metal line segment, and the influence metal line segment is a projection area line segment of a connecting via on the influence metal line in the width direction; performing hole expansion processing on each connecting via in the width direction to form an expanded connecting via; translating each influence metal line segment in the width direction in a direction away from the interconnection metal line by a certain distance to form a pretreated metal line and via layout; performing optical proximity correction on the pretreated metal line and via layout to obtain a corrected metal line and via layout, so that the photolithography process window can be increased, and the metal line is not prone to defects such as bridging.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of semiconductor manufacturing, in particular to a method and device for optical proximity effect correction of metal line and via layout and a computer readable storage medium. BACKGROUND

[0002] In the middle and late end of semiconductor manufacturing process, in order to form metal interconnection lines, vias need to be formed between metal lines of different layers to realize metal interconnection. With the increase of circuit density and the decrease of critical dimension, and the introduction of multi-patterning technology, the spacing between metal lines and the size of vias are becoming smaller and smaller, and the circuit density is becoming larger and larger, especially for integrated circuits with a technology node of less than 50 nm, which easily leads to a too small lithography process window of metal lines, affecting the yield of products. At the same time, when the integrated circuit pattern on the mask is transferred to the photoresist layer on the wafer through the lithography process, distortion often occurs due to optical proximity effect, and the metal interconnection line pattern in the dense area is prone to Bridge defects due to such distortion, and the existence of vias leads to a too small lithography process window of this part of metal interconnection lines.

[0003] In order to solve the above problems, the optical proximity correction (OPC) method is usually used to correct the pattern on the mask. The conventional correction of OPC generally enlarges the vias as a whole and shrinks the metal interconnection lines, and then corrects the enlarged vias and the shrunk interconnection lines using the OPC model to enlarge the lithography process window while meeting the circuit conduction.

[0004] However, as the technology node of integrated circuits becomes smaller (≤90 nm), the enlargement of adjacent vias is prone to via Bridge defects, and the shrinkage of metal interconnection lines is prone to cause metal interconnection layer to produce local thinning (Necking) defects, and due to the influence of etching, chemical mechanical polishing (CMP) and other processes, the risk of metal interconnection line breakage increases. SUMMARY

[0005] The purpose of the present application is to provide a method and device for optical proximity effect correction of metal line and via layout and a computer readable storage medium to enlarge the lithography process window of metal interconnection lines and vias, and to prevent metal interconnection lines from Bridge, Necking and breakage defects, thereby improving the yield of products.

[0006] The present application provides a method for optical proximity effect correction of metal line and via layout, comprising:

[0007] The original metal line and via layout is obtained, the original metal line and via layout includes at least two metal line layers and a square via layer connecting metal lines in different layers, the metal line layer includes an interconnection metal line, the interconnection metal line is connected with a connecting via; in the plane of the layer where the interconnection metal line is located, the direction perpendicular to the extension direction of the interconnection metal line is a width direction, the projection of the connecting via on the horizontal plane is in the projection of the interconnection metal line on the horizontal plane, and the size of the connecting via in the width direction is equal to the width of the interconnection metal line; the metal line adjacent to the interconnection metal line in the width direction in the metal line layer is an influence metal line, the influence metal line includes an influence metal line segment, the influence metal line segment is a projection area line segment of the connecting via on the influence metal line in the width direction;

[0008] The connecting via is expanded in the width direction to form an expanded connecting via, the size of the expanded connecting via in the width direction is greater than the width of the interconnection metal line, and the size in the extension direction remains unchanged; the size expansion amount of the connecting via in the width direction is determined according to the current photolithography process window;

[0009] Each influence metal line segment is translated in the width direction away from the interconnection metal line by a distance equal to the size expansion amount of the connecting via in the width direction to form a pretreated metal line and via layout;

[0010] The pretreated metal line and via layout is subjected to optical proximity correction to obtain a corrected metal line and via layout.

[0011] The embodiment of the application further provides an optical proximity effect correction device for a metal line and via layout, which comprises:

[0012] The obtaining module is configured to obtain an original metal line and via layout, the original metal line and via layout includes at least two metal line layers and a square via layer connecting metal lines in different layers, the metal line layer includes an interconnection metal line, the interconnection metal line is connected with a connecting via; in the plane of the layer where the interconnection metal line is located, the direction perpendicular to the extension direction of the interconnection metal line is a width direction, the projection of the connecting via on the horizontal plane is in the projection of the interconnection metal line on the horizontal plane, and the size of the connecting via in the width direction is equal to the width of the interconnection metal line; the metal line adjacent to the interconnection metal line in the width direction in the metal line layer is an influence metal line, the influence metal line includes an influence metal line segment, the influence metal line segment is a projection area line segment of the connecting via on the influence metal line in the width direction;

[0013] a hole expansion module, configured to expand each of the connection holes in the width direction according to the original metal line and via layout transmitted by the acquisition module to form expanded connection holes, so that the expanded connection holes have a size in the width direction larger than the width of the interconnection metal line and a size in the extension direction unchanged; and the size expansion amount of the connection holes in the width direction is determined according to a current photolithography process window;

[0014] a line shift module, configured to shift each of the affected metal line segments in the width direction away from the interconnection metal line by a distance equal to the size expansion amount of the connection holes in the width direction according to the original metal line and via layout transmitted by the acquisition module and the size expansion amount of the connection holes in the width direction transmitted by the hole expansion module, to form a pretreated metal line and via layout;

[0015] an optical proximity correction module, configured to perform optical proximity correction on the pretreated metal line and via layout transmitted by the line shift module to obtain a corrected metal line and via layout.

[0016] The embodiments of the present application further provide a computer readable storage medium storing a computer program, and the computer program is adapted to be loaded by a processor to execute the optical proximity effect correction method of the metal line and via layout.

[0017] The beneficial effects of the present application are: the optical proximity effect correction method for metal line and via layout provided by the present application first finds out the connection via connecting the metal lines respectively located in different layers and the corresponding interconnection metal line of the connection via, the influence metal line and the influence metal line segment from the original metal line and via layout, wherein the interconnection metal line is the metal line connected with the connection via, the influence metal line is the metal line adjacent to the interconnection metal line in the width direction, the width direction is the direction perpendicular to the extension direction of the interconnection metal line in the plane of the layer where the interconnection metal line is located, and the influence metal line segment is the projection area line segment of the connection via on the influence metal line in the width direction, then the hole of the connection via in the width direction is expanded to form an enlarged connection via, and the influence metal line segment in the width direction is moved a certain distance away from the interconnection metal line, and the moving distance is equal to the size expansion amount of the connection via in the width direction, so that the enlargement of the connection via can increase the lithography process window of the interconnection metal line and the connection via, the movement of the influence metal line segment can make the interconnection metal line not easy to have Bridge defect with the adjacent metal line, and the limited movement amount of the influence metal line segment can make the influence metal line not easy to have Necking and open circuit defects, so as to ensure that the subsequent optical critical correction method is used to correct the enlarged connection via and the moved interconnection metal line, which can enlarge the lithography process window of the interconnection metal line and the connection via on the basis of meeting the circuit conduction, thereby improving the process feasibility of the interconnection metal line and the connection via, improving the product yield, and reducing the technology node of the interconnection metal line (such as reducing to about 25nm), and improving the product competitiveness. In addition, the optical proximity effect correction method for metal line and via layout provided by the present application has universality for metal line and via layout, and has wide application prospect. BRIEF DESCRIPTION OF DRAWINGS

[0018] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings needed in the embodiment description will be briefly introduced as follows. Obviously, the drawings in the following description are only some embodiments of the present application, and other drawings can be obtained by those skilled in the art without creative labor.

[0019] Figure 1 is a flowchart of the optical proximity effect correction method for metal line and via layout provided by the embodiments of the present application;

[0020] Figure 2 is a cross-sectional structure schematic diagram of the original metal line and via layout provided by the embodiments of the present application;

[0021] Figure 3 is Figure 2 is a top view structure schematic diagram of the square via layer and the second metal line layer in

[0022] Figure 4 is Figure 2 is a bottom view structural schematic diagram of a first metal line layer and a square via layer in the embodiment of the present application;

[0023] Figure 5 is a top view structural schematic diagram after the via is treated by hole expansion in the embodiment of the present application;

[0024] Figure 6 is a top view structural schematic diagram after the metal line segment is translated in the embodiment of the present application;

[0025] Figure 7 is another cross-sectional structural schematic diagram of the original metal line and via layout in the embodiment of the present application;

[0026] Figure 8 is Figure 7 is a top view structural schematic diagram of a first square via layer, a second metal line layer and a second square via layer in the embodiment of the present application;

[0027] Figure 9 is another top view structural schematic diagram after the via is treated by hole expansion in the embodiment of the present application;

[0028] Figure 10 is another top view structural schematic diagram after the metal line segment is translated in the embodiment of the present application;

[0029] Figure 11 is a structural schematic diagram of an optical proximity effect correction device of the metal line and via layout in the embodiment of the present application. DETAILED DESCRIPTION

[0030] The technical solutions in the embodiments of the present application will be described clearly and completely below with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative labor fall within the scope of protection of the present application.

[0031] In the following description, specific embodiments of the present application will be described with reference to steps and symbolic representations of operations that are performed by one or more computers, unless otherwise indicated. As such, it will be understood that such steps and operations, while presented in a program sequence, are nevertheless effectively "performed" by such software components. Additionally, particular sequences of operations are presented herein for purposes of example, and it is understood that described embodiments can be performed with numerous other sequences of operations. Further, descriptions of operations and arrangements are presented for purposes of clarity and example, and it is understood that this description is not intended to limit the present application to the described embodiments, but rather, is intended to highlight the possible implementations of the present application.

[0032] As used in this document, the term "module" or "unit" can be viewed as a software object that is executed on the computing system. The different components, modules, engines and services described herein can be viewed as implemented objects on the computing system. The apparatuses and methods described herein are preferably implemented as software, but can also be implemented as hardware, both of which are within the scope of the present application.

[0033] In the following description of the present application, a plurality of "embodiments" are described, which describe a subset of all possible embodiments. However, it should be understood that a plurality of "embodiments" can be the same subset of all possible embodiments, or different subsets of all possible embodiments, and can be combined with each other as long as there is no conflict.

[0034] In the following description of the present application, the terms "first", "second", "third", etc. are merely used to distinguish similar objects, and do not represent a specific order or sequence of the objects. It can be understood that the "first", "second", "third", etc. can be interchanged in a specific order or sequence as long as it is allowed, so that the embodiments of the present application described herein can be implemented in an order other than that illustrated or described herein.

[0035] In addition, the direction terms mentioned in the present application, such as [up], [down], [front], [back], [left], [right], [inward], [outward], [side] and the like, are only the direction of the attached drawings. Therefore, the direction terms used are used to illustrate and understand the present application, and are not intended to limit the present application. In the various drawings, similar units are represented by the same reference numerals. For the sake of clarity, the various parts in the drawings are not drawn to scale. In addition, some well-known parts can not be shown in the drawings.

[0036] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used in the description herein is for describing the embodiments of the present application only and is not intended to limit the present application.

[0037] The embodiment of the present application provides a metal line and via layout optical proximity effect correction method, first, find out the connecting via connecting the metal lines respectively located in different layers and the corresponding interconnection metal line, the influence metal line and the influence metal line segment of the connecting via, wherein the interconnection metal line is the metal line connected with the connecting via, the influence metal line is the metal line adjacent to the interconnection metal line in the width direction, the width direction is the direction perpendicular to the extension direction of the interconnection metal line in the plane of the layer where the interconnection metal line is located, and the influence metal line segment is the projection area line segment of the connecting via on the influence metal line in the width direction, then the hole of the connecting via in the width direction is expanded to form an expanded connecting via, so as to increase the lithography process window of the interconnection metal line and the connecting via, and the influence metal line segment in the width direction is moved in the direction away from the interconnection metal line by a certain distance, and the moving distance is equal to the size expansion amount of the connecting via in the width direction, so as to reduce the Bridge defect of the interconnection metal line and its adjacent metal line, and at the same time, reduce the Necking and open circuit defects of the influence metal line segment caused by the excessive moving amount of the influence metal line segment, and then the optical critical correction method is used to correct the expanded connecting via and the moved interconnection metal line, so as to enlarge the lithography process window on the basis of meeting the circuit conduction.

[0038] Compared with the related metal line and via layout optical proximity effect correction method, the via is first enlarged as a whole, the interconnection metal line is reduced, and then the OPC model is used to correct the via enlarged as a whole and the interconnection metal line reduced, so as to enlarge the lithography process window on the basis of meeting the circuit conduction, in this way, the enlargement of the adjacent via is easy to produce the via Bridge defect, the reduction of the interconnection metal line is easy to cause the electromigration and make the interconnection metal line produce the local thinning (Necking) defect, and the risk of open circuit of the interconnection metal line is increased due to the influence of etching, chemical mechanical polishing (CMP) and the like; and the embodiment of the present application expands the via and moves the related influence metal line segment by a proper amount, and does not reduce the interconnection metal line, so as to not only increase the lithography process window of the interconnection metal line and the via, but also reduce the Bridge defect of the interconnection metal line, and because the reduction of the interconnection metal line is avoided, the problem that the reduced interconnection metal line is easy to produce the local thinning (Necking) defect due to the electromigration is avoided, and the problem that the reduced interconnection metal line is easy to produce the open circuit due to the influence of etching, chemical mechanical polishing (CMP) and the like is avoided, which is beneficial to improve the product yield.

[0039] Compared with the related method of increasing the via hole by combining the similar via holes to solve the problem of too small lithography process window in subsequent conventional OPC correction, the implementation of this scheme requires that the original metal line and via hole layout meet the prerequisite (i.e., there are two via holes, the two via holes belong to the same layer and are close in distance; the functions of the devices to which the two via holes belong are consistent, and will not affect the interconnection circuit), which limits the use of this scheme and has poor universality for metal line and via hole layout. The optical proximity effect correction method for metal line and via hole layout of the embodiment of the application not only solves the problem of too small lithography process window in conventional OPC correction, but also has good universality for metal line and via hole layout and wide application prospect.

[0040] The following will be described in detail in conjunction with specific embodiments. It should be noted that the sequence numbers of the following embodiments do not limit the preferred order of the embodiments.

[0041] Please refer to Figure 1 , Figure 1 is a flowchart of the optical proximity effect correction method for metal line and via hole layout provided by the embodiment of the application. The method can be executed by an optical proximity effect correction device for metal line and via hole layout, and can be applied to the scene of optical proximity correction for original metal line and via hole layout (i.e., metal line and via hole layout that needs to be corrected for optical proximity effect, that is, the layout of metal line and via hole obtained after the actual preparation process of the design). First, find out the connection via hole connecting the metal lines located in different layers and the interconnection metal line corresponding to the connection via hole, the influence metal line and the influence metal line segment from the original metal line and via hole layout, then enlarge the connection via hole and appropriately move the corresponding influence metal line segment to form a pretreated metal line and via hole layout, and then correct the pretreated metal line and via hole layout by using a conventional optical critical correction method to obtain a corrected metal line and via hole layout. The corrected metal line and via hole layout can be used to manufacture a corresponding metal line and via hole mask, and the metal line and via hole patterns in the corrected metal line and via hole layout are consistent with the metal line and via hole patterns on the corresponding metal line and via hole mask. The specific process of the method can be as follows:

[0042] S101. Obtain a raw metal line and via layout, the raw metal line and via layout comprising at least two metal line layers and a square via layer connecting metal lines respectively located in different layers, the metal line layers comprising interconnection metal lines, the interconnection metal lines being connected with the connecting vias; in the plane of the layer where the interconnection metal line is located, the direction perpendicular to the extension direction of the interconnection metal line is the width direction, the projection of the connecting via on the horizontal plane is within the projection of the interconnection metal line on the horizontal plane, and the size of the connecting via in the width direction is equal to the width of the interconnection metal line; the metal line adjacent to the interconnection metal line in the width direction in the metal line layer is the influence metal line, and the influence metal line comprises an influence metal line segment, which is the projection area line segment of the connecting via on the influence metal line in the width direction.

[0043] In the embodiment, in the raw metal line and via layout, each metal line layer can comprise at least one metal line, the number of the square via layer can be one or more, and each square via layer can comprise at least one square via, and the cross section of the square via can be a square or a rectangle.

[0044] Specifically, in the raw metal line and via layout, the number of the connecting via can be one or more, and the connecting via belongs to the square via layer, and each connecting via is a square via connecting metal lines respectively located in different layers in the square via layer to which the connecting via belongs.

[0045] Specifically, in the raw metal line and via layout, for each connecting via, the metal line connected with the connecting via in each metal line layer is the interconnection metal line corresponding to the connecting via; in the plane of the layer where the interconnection metal line corresponding to the connecting via is located, the direction perpendicular to the extension direction of the interconnection metal line corresponding to the connecting via is the width direction corresponding to the connecting via; the projection of the connecting via on the horizontal plane is within the projection of the interconnection metal line corresponding to the connecting via on the horizontal plane, and the size of the connecting via in the width direction corresponding to the connecting via is equal to the width of the interconnection metal line corresponding to the connecting via; the metal line adjacent to the interconnection metal line corresponding to the connecting via in the width direction corresponding to the connecting via in each metal line layer is the influence metal line corresponding to the connecting via; the projection area line segment of the connecting via on the influence metal line corresponding to the connecting via in the width direction corresponding to the connecting via is the influence metal line segment corresponding to the connecting via.

[0046] Moreover, in the specific implementation, after obtaining the raw metal line and via layout, all the connecting vias, the interconnection metal lines corresponding to each connecting via, the width direction, the influence metal line and the influence metal line segment corresponding to each connecting via can be found out from the obtained raw metal line and via layout, so as to facilitate the subsequent related processing of the obtained raw metal line and via layout.

[0047] Moreover, for the convenience of understanding, the following takesFigure 2 The original metal line and via layout 20 is taken as an example for illustration. As shown in Figure 2 The original metal line and via layout 20 can include two metal line layers (i.e., a first metal line layer 21 and a second metal line layer 23) and a square via layer (i.e., a first square via layer 22) connecting metal lines 211 in the first metal line layer 21 and metal lines 231 in the second metal line layer 23. The first square via layer 22 includes three connection vias (i.e., a connection via 221A, a connection via 221B and a connection via 221C), each of which is used to connect metal lines 211 in the first metal line layer 21 and metal lines 231 in the second metal line layer 23 together.

[0048] Further, as shown in Figure 3 When the first square via layer 22 and the second metal line layer 23 are observed from a top view, the second metal line layer 23 includes three metal lines 231 (i.e., a first metal line 231A, a second metal line 231B and a third metal line 231C). In the second metal line layer 23, the connection via 221A corresponds to the metal line 231B, the corresponding width direction is parallel to the Y axis in the Y direction, and the corresponding influence metal lines are two, i.e., the metal line 231A and the metal line 231C, and the corresponding influence metal line segments are two, i.e., the metal line segment A1 included in the metal line 231A and the metal line segment C1 included in the metal line 231C. Figure 3 The connection via 221B corresponds to the metal line 231B, the corresponding width direction is parallel to the Y axis in the Y direction, and the corresponding influence metal lines are two, i.e., the metal line 231A and the metal line 231C, and the corresponding influence metal line segments are two, i.e., the metal line segment A2 included in the metal line 231A and the metal line segment C2 included in the metal line 231C. Figure 3 The connection via 221C corresponds to the metal line 231B, the corresponding width direction is parallel to the Y axis in the Y direction, and the corresponding influence metal lines are two, i.e., the metal line 231A and the metal line 231C, and the corresponding influence metal line segments are two, i.e., the metal line segment A3 included in the metal line 231A and the metal line segment C3 included in the metal line 231C. Figure 3

[0049] Further, as shown in Figure 4 ​As shown, the first metal line layer 21 includes three metal lines 211 (i.e., a first metal line 211A, a second metal line 211B and a third metal line 211C) when the first metal line layer 21 and the first square via layer 22 are observed from a bottom perspective. In the first metal line layer 21, the interconnection metal line corresponding to the connection via 221A is the metal line 211B, and the corresponding width direction is the direction parallel to the Y axis in the Figure 4 Figure 4 Figure 4

[0050] As shown, the projection of each connection via (such as the connection via 221A, the connection via 221B and the connection via 221C) on a horizontal plane (i.e., a plane parallel to the X axis and the Y axis in the Figure 4 Figure 4 Figure 4

[0051] It can be understood that, Figure 2 the original metal line and via layout is not a complete display of the metal line layer and the square via layer included in the original metal line and via layout, but only a part thereof, which is enough to achieve the purpose of the present application. Of course, the original metal line and via layout can also only include the metal line layer and the square via layer shown in Figure 2 ​​​​​​​​​​

[0052] In some embodiments, in the original metal line and via layout, for each metal line layer, all the metal lines included in the metal line layer can be arranged in a regular manner, for example, all the metal lines included in the metal line layer are arranged in a periodic pattern as a whole, specifically, the extension directions of all the metal lines included in the metal line layer can only have two directions, i.e., a horizontal direction and a vertical direction, wherein the horizontal direction and the vertical direction are parallel to the metal line layer, and the horizontal direction is perpendicular to the vertical direction; or all the metal lines included in the metal line layer can be arranged in an irregular manner, for example, all the metal lines included in the metal line layer are in a state of disorder as a whole, specifically, the extension directions of all the metal lines included in the metal line layer are multiple and irregular.

[0053] In some embodiments, in the original metal line and via layout, for each metal line layer, all the metal line patterns included in the metal line layer can be designed to be transferred by one or more photolithography processes. And it can be understood that by designing all the metal line patterns included in the metal line layer to be transferred by multiple photolithography processes, the metal line layer can be suitable for Multi-Patterning technology.

[0054] S102. The via hole is expanded in the width direction to form an expanded connection via hole, so that the size of the expanded connection via hole in the width direction is greater than the width of the interconnection metal line, and the size in the extension direction remains unchanged; the size expansion of the connection via hole in the width direction is determined according to the current photolithography process window.

[0055] Specifically, in the original metal line and via layout, for each connection via hole, the connection via hole can be expanded in its corresponding width direction to form a corresponding expanded connection via hole, and the size of the corresponding expanded connection via hole of the connection via hole in the corresponding width direction of the connection via hole is greater than the width of the corresponding interconnection metal line of the connection via hole, and the size of the corresponding expanded connection via hole of the connection via hole in the extension direction of the corresponding interconnection metal line of the connection via hole is equal to the size of the connection via hole in the extension direction of the corresponding interconnection metal line. In other words, the expansion of the connection via hole only increases the size of the connection via hole in its corresponding width direction, without changing the size of the connection via hole in the extension direction of its corresponding interconnection metal line.

[0056] Furthermore, the inventors of the present application find that increasing the size of the connection via in the extension direction of the corresponding interconnection metal line has no obvious effect on increasing the lithography process window of the connection via and the interconnection metal line, and can cause the expanded connection via to be too large, resulting in waste of the filling material, and the expanded connection via to be prone to bridging. Therefore, in the embodiment, by only increasing the size of the connection via in the corresponding width direction, while keeping the size of the connection via in the extension direction of the corresponding interconnection metal line unchanged, the lithography process window of the connection via and the interconnection metal line can be increased, the operation difficulty of the hole expansion process of the connection via can be reduced, the waste of the filling material caused by the expanded connection via being too large can be avoided, and the risk of the expanded connection via bridging can be reduced.

[0057] Specifically, for each connection via, the size of the connection via in the corresponding width direction can be one of the width and the length of the connection via, and the size of the connection via in the extension direction of the corresponding interconnection metal line can be the other of the width and the length of the connection via.

[0058] In the embodiment, for each connection via, the difference between the size of the corresponding expanded connection via in the width direction of the connection via and the size of the connection via in the corresponding width direction of the connection via is equal to the size expansion amount of the connection via in the corresponding width direction of the connection via, and the size expansion amount of the connection via in the corresponding width direction of the connection via is determined according to the current lithography process window.

[0059] It can be understood that the lithography process window (Process Window) is an extremely important standard for measuring the level of lithography, and relevant researchers always strive to optimize the lithography process window to obtain a larger lithography process window. The lithography process window can refer to the exposure dose and defocus amount range that ensures that the mask pattern can be correctly transferred to the silicon wafer, and can include three aspects of information: imaging accuracy, exposure, and focus depth.

[0060] Specifically, the current lithography process window in the embodiment can refer to the exposure dose and defocus amount range that ensures that the metal line and via pattern included in the original metal line and via layout can be correctly transferred to the silicon wafer. Furthermore, the size expansion amount of the connection via in the corresponding width direction of the connection via according to the current lithography process window in the embodiment can refer to that the size expansion amount of the connection via in the corresponding width direction of the connection via should meet that the corresponding formed expanded connection via can be correctly transferred to the silicon wafer under the current lithography process window, that is, defects such as bridging or overlapping do not occur.

[0061] In addition, in implementation, the size expansion amount of the connection via in the corresponding width direction thereof can be less than or equal to the alignment allowance. The alignment allowance refers to the maximum allowable offset when transferring the metal line layer above the layer where the connection via is located through a photolithography process. It can be understood that only when the offset when transferring the metal line layer above the layer where the connection via is located through the via photolithography process is not greater than the maximum allowable offset, the metal line layer above the layer where the connection via is located can be correctly transferred, and when the offset when transferring the metal line layer above the layer where the connection via is located through the via photolithography process is greater than the maximum allowable offset, the metal line layer above the layer where the connection via is located cannot be correctly transferred.

[0062] In some embodiments, for each connection via, the ratio of the size expansion amount of the connection via in the corresponding width direction thereof to the size of the connection via in the corresponding width direction thereof can be a, 0.5≤a≤0.75. Exemplarily, a can be equal to 0.5, 0.55, 0.6, 0.65, 0.7, or 0.75, etc. In this way, the size expansion amount of the connection via 221 can be ensured to be moderate, so as to increase the photolithography process window of the connection via and the interconnection metal line while reducing the risk of bridging or overlapping of the interconnection metal line in the increased photolithography process window.

[0063] In some specific embodiments, the size expansion of the connection via in the width direction to form the expanded connection via can specifically be: performing size expansion processing on both sides of the connection via in the width direction thereof towards the interconnection metal line by a first size expansion amount and a second size expansion amount, and the sum of the first size expansion amount and the second size expansion amount is equal to the size expansion amount of the connection via.

[0064] Specifically, in the original metal line and via layout, for each connection via, size expansion processing can be performed on both sides of the connection via in the corresponding width direction thereof towards the corresponding interconnection metal line by a first size expansion amount and a second size expansion amount, wherein the sum of the first size expansion amount and the second size expansion amount is equal to the size expansion amount of the connection via in the corresponding width direction thereof, and the interval distance between the opposite edges of the corresponding expanded connection via of the connection via along the corresponding width direction thereof and the connection via can be equal to the first size expansion amount and the second size expansion amount, respectively. In addition, in implementation, the first size expansion amount and the second size expansion amount can be equal, so as to perform the same outward edge expansion processing on both opposite edges of the connection via along the corresponding width direction thereof, thereby improving the electrical uniformity of the metal interconnection structure.

[0065] In addition, for the convenience of understanding, the following will be specifically described by taking three connection vias (i.e., the connection via 221A, the connection via 221B, and the connection via 221C) in the original metal line and via layout 20 shown in FIG. 2 as an example. Figure 3 As shown in FIG. 2, the original metal line and via layout 20 includes a plurality of metal lines 210 and a plurality of vias 220. The metal lines 210 and the vias 220 are arranged in a grid manner.Figure 3 and Figure 5 As shown in FIG. 16A and FIG. 16B, after the connection via 221A is expanded in its corresponding width direction, the connection via 221A becomes an expanded connection via 221A'; after the connection via 221B is expanded in its corresponding width direction, the connection via 221B becomes an expanded connection via 221B'; and after the connection via 221C is expanded in its corresponding width direction, the connection via 221C becomes an expanded connection via 221C'.

[0066] S103. Shift each affected metal line segment in a direction away from the interconnection metal line in the width direction by a distance equal to the size expansion amount of the connection via in the width direction, to form a pretreated metal line and via layout.

[0067] Specifically, in the original metal line and via layout, for each connection via, after the connection via is expanded in its corresponding width direction to form a corresponding expanded connection via, the affected metal line segment corresponding to the connection via can then be shifted in a direction away from the interconnection metal line corresponding to the connection via in the width direction corresponding to the connection via by a distance equal to the gap distance between the target side of the expanded connection via corresponding to the connection via and the connection via, the target side being the side opposite to the affected metal line segment corresponding to the connection via in the width direction corresponding to the connection via. In this way, after the connection via is enlarged to increase the lithography process window of the interconnection metal line and the connection via, the affected metal line segment is further shifted by a corresponding distance, which not only prevents the expanded connection via from overlapping with the affected metal line segment, but also prevents the interconnection metal line from bridging the affected metal line under the increased lithography process window.

[0068] In some embodiments, to prevent the affected metal line segment from being shifted to cause the affected metal line to which the affected metal line segment belongs to be easily broken, a maximum allowed shift distance of the affected metal line segment when being shifted can be set to control the shift distance of the affected metal line segment when being shifted to be less than or equal to the maximum allowed shift distance. Illustratively, the maximum allowed shift distance of the affected metal line segment can be less than or equal to 1 / 2-3 / 4 of the width of the affected metal line to which the affected metal line segment belongs.

[0069] In some embodiments, in the same metal line layer, there can be a first affected metal line and a second affected metal line respectively on two sides of an interconnection metal line. Accordingly, expanding the connection via connected to the interconnection metal line in its corresponding width direction can specifically be expanding the connection via connected to the interconnection metal line in its corresponding width direction towards the first affected metal line and the second affected metal line by a first size expansion amount and a second size expansion amount, respectively.

[0070] Correspondingly, the moving distance of the affecting metal line segment of the first affecting metal line can be the first moving distance, the moving distance of the affecting metal line segment of the second affecting metal line can be the second moving distance, and the first moving distance can be equal to the first size expansion amount of the connection via connected with the interconnection metal line when the edge expansion treatment is performed, and the second moving distance can be equal to the second size expansion amount of the connection via connected with the interconnection metal line when the edge expansion treatment is performed.

[0071] And, for the convenience of understanding, the following takes the second metal line layer 23 in the original metal line and via layout 20 shown in Figure 2 as an example, as shown in Figure 2 and Figure 3 In the second metal line layer 23, there can be one affecting metal line on each side of the interconnection metal line 231B, i.e. the first affecting metal line 231A and the second affecting metal line 231C. First, as shown in Figure 3 and Figure 5 , the connection via 221A connected with the interconnection metal line 231B can be subjected to the via expansion treatment in the corresponding width direction thereof to form an expanded connection via 221A' with the first size expansion amount and the second size expansion amount towards the first affecting metal line 231A and the second affecting metal line 231C respectively; the connection via 221B connected with the interconnection metal line 231B can be subjected to the via expansion treatment in the corresponding width direction thereof to form an expanded connection via 221B' with the first size expansion amount and the second size expansion amount towards the first affecting metal line 231A and the second affecting metal line 231C respectively; and the connection via 221C connected with the interconnection metal line 231B can be subjected to the via expansion treatment in the corresponding width direction thereof to form an expanded connection via 221C' with the first size expansion amount and the second size expansion amount towards the first affecting metal line 231A and the second affecting metal line 231C respectively.

[0072] Then, as shown in Figure 3 , Figure 5 and Figure 6As shown, the influence metal line segment A1 included in the first influence metal line segment 231A corresponding to the connection via 221A can be translated in the direction away from the interconnection metal line 231B in the width direction corresponding to the connection via 221A by a distance, and the moving distance of the influence metal line segment A1 of the first influence metal line 231A is equal to the first size expansion amount of the connection via 221A when the edge expansion process is performed; the influence metal line segment A2 included in the first influence metal line segment 231A corresponding to the connection via 221B can be translated in the direction away from the interconnection metal line 231B in the width direction corresponding to the connection via 221B by a distance, and the moving distance of the influence metal line segment A2 of the first influence metal line 231A is equal to the first size expansion amount of the connection via 221B when the edge expansion process is performed; the influence metal line segment A3 included in the first influence metal line segment 231A corresponding to the connection via 221C can be translated in the direction away from the interconnection metal line 231B in the width direction corresponding to the connection via 221C by a distance, and the moving distance of the influence metal line segment A3 of the first influence metal line 231A is equal to the first size expansion amount of the connection via 221C when the edge expansion process is performed; the influence metal line segment C1 included in the second influence metal line segment 231C corresponding to the connection via 221A can be translated in the direction away from the interconnection metal line 231B in the width direction corresponding to the connection via 221A by a distance, and the moving distance of the influence metal line segment C1 of the second influence metal line 231C is equal to the second size expansion amount of the connection via 221A when the edge expansion process is performed; the influence metal line segment C2 included in the second influence metal line segment 231C corresponding to the connection via 221B can be translated in the direction away from the interconnection metal line 231B in the width direction corresponding to the connection via 221B by a distance, and the moving distance of the influence metal line segment C2 of the second influence metal line 231C is equal to the second size expansion amount of the connection via 221B when the edge expansion process is performed; the influence metal line segment C3 included in the second influence metal line segment 231C corresponding to the connection via 221C can be translated in the direction away from the interconnection metal line 231B in the width direction corresponding to the connection via 221C by a distance, and the moving distance of the influence metal line segment C3 of the second influence metal line 231C is equal to the second size expansion amount of the connection via 221C when the edge expansion process is performed.

[0073] In some embodiments, in the same metal line layer, the upper surface and the lower surface of one interconnection metal line can be connected with two connection vias (i.e., a first connection via and a second connection via) respectively. And, the projection of the first connection via on a horizontal plane overlaps with the projection of the second connection via on the horizontal plane. The size of the first connection via in its corresponding width direction can be the same as the size of the second connection via in its corresponding width direction, such as, can be equal to the width of the interconnection metal line. The size of the first connection via in the extension direction of the interconnection metal line can be smaller than the size of the second connection via in the extension direction of the interconnection metal line.

[0074] And, the edge expanding processing on the first connection via and the second connection via respectively to form the corresponding enlarged connection vias can be: the hole expanding processing on the first connection via in its corresponding width direction to form a first enlarged connection via; the hole expanding processing on the second connection via in its corresponding width direction to form a second enlarged connection via, and the size expanding amount of the first connection via in its corresponding width direction is larger than the size expanding amount of the second connection via in its corresponding width direction.

[0075] In some specific embodiments, the ratio of the size expanding amount of the second connection via when performing the edge expanding processing to the size expanding amount of the first connection via when performing the edge expanding processing can be β, 0.4≤β≤0.8. Exemplarily, β can be equal to 0.4, 0.45, 0.5, 0.55, 0.6, 0.65, 0.7, 0.75 or 0.8, etc. In this way, it can be ensured that the size expanding amount of the first connection via and the second connection via respectively connecting the upper surface and the lower surface of the same interconnection metal line are both moderate.

[0076] In some embodiments, the upper surface and the lower surface of the interconnection metal line are connected with the first connection via and the second connection via respectively, and in the metal line layer in which the interconnection metal line is located, the influence metal line segments corresponding to the first connection via and the second connection via can include a first region influence metal line segment, a second region influence metal line segment, and a third region influence metal line segment, wherein the first region influence metal line segment is an overlapping projection region segment of the first connection via and the second connection via on the corresponding influence metal line along the corresponding width direction thereof, the second region influence metal line segment is a projection region segment of only the first connection via on the corresponding influence metal line along the corresponding width direction thereof, and the third region influence metal line segment is a projection region segment of only the second connection via on the corresponding influence metal line along the corresponding width direction thereof; in other words, the first region influence metal line segment belongs to both the influence metal line segment corresponding to the first connection via and the influence metal line segment corresponding to the second connection via, the second region influence metal line segment only belongs to the influence metal line segment corresponding to the first connection via and does not belong to the influence metal line segment corresponding to the second connection via, and the third region influence metal line segment only belongs to the influence metal line segment corresponding to the second connection via and does not belong to the influence metal line segment corresponding to the first connection via.

[0077] Correspondingly, the translation of the influence metal line segments corresponding to the first connection via and the second connection via can specifically be that the first region influence metal line segment, the second region influence metal line segment, and the third region influence metal line segment are respectively translated by a certain distance in the direction away from the corresponding interconnection metal line (i.e., the interconnection metal line whose upper surface and lower surface are connected with the first connection via and the second connection via respectively) along the corresponding width direction (i.e., the direction perpendicular to the extension direction of the interconnection metal line whose upper surface and lower surface are connected with the first connection via and the second connection via respectively), and the moving distance of the first region influence metal line segment is equal to the sum of the size expansion amount of the first connection via when the expansion processing is performed and the size expansion amount of the second connection via when the expansion processing is performed, the moving distance of the second region influence metal line segment is equal to the size expansion amount of the first connection via when the expansion processing is performed, and the moving distance of the third region influence metal line segment is equal to the size expansion amount of the second connection via when the expansion processing is performed.

[0078] Specifically, the edge expanding processing on the first connection via and the second connection via respectively can be specifically: the first connection via is subjected to the hole expanding processing of the first size expanding amount and the second size expanding amount respectively on the corresponding width direction of the first connection via towards the two sides (i.e. the first side and the second side) of the corresponding interconnection metal line; the second connection via is subjected to the hole expanding processing of the first size expanding amount and the second size expanding amount respectively on the corresponding width direction of the second connection via towards the two sides of the corresponding interconnection metal line. Correspondingly, in the metal line layer where the corresponding interconnection metal line is located, for the influence metal line segment corresponding to the first connection via and the second connection via, the moving distance of the first area influence metal line segment located on the first side of the corresponding interconnection metal line when subjected to the translation is equal to the sum of the first size expanding amount of the first connection via when subjected to the edge expanding processing and the first size expanding amount of the second connection via when subjected to the edge expanding processing; the moving distance of the first area influence metal line segment located on the second side of the corresponding interconnection metal line when subjected to the translation is equal to the sum of the second size expanding amount of the first connection via when subjected to the edge expanding processing and the second size expanding amount of the second connection via when subjected to the edge expanding processing; the moving distance of the second area influence metal line segment located on the first side of the corresponding interconnection metal line when subjected to the translation is equal to the first size expanding amount of the first connection via when subjected to the edge expanding processing; the moving distance of the second area influence metal line segment located on the second side of the corresponding interconnection metal line when subjected to the translation is equal to the second size expanding amount of the first connection via when subjected to the edge expanding processing; the moving distance of the third area influence metal line segment located on the first side of the corresponding interconnection metal line when subjected to the translation is equal to the first size expanding amount of the second connection via when subjected to the edge expanding processing; the moving distance of the third area influence metal line segment located on the second side of the corresponding interconnection metal line when subjected to the translation is equal to the second size expanding amount of the second connection via when subjected to the edge expanding processing.

[0079] And, for the convenience of understanding, the following will be specifically described by taking the original metal line and via layout 20 shown in Figure 7 as an example, and Figure 7 the original metal line and via layout 20 shown in Figure 2 can be understood as being based on the original metal line and via layout 20 shown in Figure 7 and Figure 8 in the original metal line and via layout 20, the upper surface of the interconnection metal line 231B included in the second metal line layer 23 is connected with the connection via 221B included in the first square via layer 22, and the lower surface is connected with the connection via 241 included in the second square via layer 24. And, as Figure 8As shown, observing the first square through-hole layer 22, the second metal wire layer 23, and the second square through-hole layer 24 from a top-down perspective, it can be seen that the connecting through-hole 221B is on the horizontal plane (i.e., with...). Figure 8 The projection of the plane perpendicular to the Z-axis overlaps with the projection of the connecting via 241 on the horizontal plane. The dimensions of the connecting via 221B and the connecting via 241 are the same in the corresponding width direction (i.e., the direction perpendicular to the extension direction of the interconnect metal line 231B). The dimension of the connecting via 221B in the extension direction of the interconnect metal line 231B is smaller than the dimension of the connecting via 241 in the extension direction of the interconnect metal line 231B.

[0080] Specifically, such as Figure 8 As shown, in the second metal line layer 23 where the interconnecting metal line 231B is located, the influencing metal segments (i.e., influencing metal segments A2, A4, C2, and C4) corresponding to the connecting vias 221B and 241 include first region influencing metal segments (i.e., region influencing metal segments A22 and C22) and third region influencing metal segments (i.e., region influencing metal segments A21, A23, C21, and C4). The first region influences metal segment A22, excluding the second region influences metal segment A22. The second region influences metal segment A22, which simultaneously belongs to both influence metal segment A2 and influence metal segment A4. The third region influences metal segment C22, which simultaneously belongs to both influence metal segment C2 and influence metal segment C4. The fourth region influences metal segments A21, A23, C21, and C22, which respectively belong to influence metal segment A4, influence metal segment A4, influence metal segment C4, and influence metal segment C4.

[0081] Specifically, such as Figure 8 and Figure 9 As shown, after enlarging the connecting through hole 221B in its corresponding width direction, the connecting through hole 221B becomes an enlarged connecting through hole 221B'; similarly, after enlarging the connecting through hole 241 in its corresponding width direction, the connecting through hole 241 becomes an enlarged connecting through hole 241'. Furthermore, the increase in size of the connecting through hole 221 during the enlargement process is greater than the increase in size of the connecting through hole 241 during the enlargement process. In other words, the size of the enlarged connecting through hole 221B' in the width direction corresponding to the connecting through hole 221B is greater than the size of the enlarged connecting through hole 241' in the width direction corresponding to the connecting through hole 241.

[0082] Next, as Figure 8 , Figure 9 and Figure 10As shown, the region-impact metal line segments (i.e., region-impact metal line segment A22 and region-impact metal line segment C22) of the first region and the region-impact metal line segments (i.e., region-impact metal line segment A21, region-impact metal line segment A23, region-impact metal line segment C21 and region-impact metal line segment C22) of the third region can be respectively translated in the corresponding width direction (i.e., the direction perpendicular to the extending direction of the interconnection metal line 231B) by a distance away from the interconnection metal line 231B, and the sum of the moving distances of the region-impact metal line segment A22 and the region-impact metal line segment C22 is equal to the sum of the size expansion amount of the connection via 221B when the expansion processing is performed and the size expansion amount of the connection via 241 when the expansion processing is performed, the sum of the moving distances of the region-impact metal line segment A21 and the region-impact metal line segment C21 is equal to the size expansion amount of the connection via 241 when the expansion processing is performed, and the sum of the moving distances of the region-impact metal line segment A23 and the region-impact metal line segment C23 is equal to the size expansion amount of the connection via 241 when the expansion processing is performed.

[0083] S104. performing optical proximity correction on the pre-processed metal line and via layout to obtain a corrected metal line and via layout.

[0084] Specifically, after obtaining the pre-processed metal line and via layout, an optical proximity correction method (such as a model-based optical proximity correction method or other conventional optical proximity correction method) can be used to correct the optical proximity effect of the pre-processed metal line and via layout, so as to enlarge the lithography process window on the basis of satisfying the circuit conduction, and obtain a corrected metal line and via layout.

[0085] Moreover, it should be noted that in the embodiment, the connection via in the original metal line and via layout is first enlarged, the relevant impact metal line segments in the original metal line and via layout are moved by an appropriate distance, and then the enlarged connection via and the moved interconnection metal line are corrected by using a conventional optical proximity correction method. In this way, the lithography process window of the interconnection metal line and the connection via can be more enlarged on the basis of satisfying the circuit conduction, so that the process feasibility of the interconnection metal line and the connection via can be improved, the product yield can be improved, and the technology node of the interconnection metal line can be reduced (such as to about 25 nm), thereby improving the product competitiveness.

[0086] In some embodiments, after S104 described above, that is, after obtaining the corrected metal line and via layout, a mask plate is prepared according to the metal line and via patterns in the corrected metal line and via layout, and then a metal line and via pattern is prepared on a wafer by using a lithography technology, so as to realize the transfer of the designed original metal line and via layout to the wafer.

[0087] From the above, the metal line and via layout optical proximity effect correction method provided in the embodiment finds out the connection via connecting the metal lines respectively located in different layers and the corresponding interconnection metal line of the connection via, the influence metal line and the influence metal line segment from the original metal line and via layout, wherein the interconnection metal line is the metal line connected with the connection via, the influence metal line is the metal line adjacent to the interconnection metal line in the width direction, the width direction is the direction perpendicular to the extension direction of the interconnection metal line in the plane of the layer where the interconnection metal line is located, and the influence metal line segment is the projection area line segment of the connection via on the influence metal line in the width direction. Then, the hole of the connection via in the width direction is expanded to form an expanded connection via, and the influence metal line segment in the width direction is translated in the direction away from the interconnection metal line by a certain distance, and the moving distance is equal to the size expansion amount of the connection via in the width direction. In this way, the expansion of the connection via can increase the lithography process window of the interconnection metal line and the connection via, the movement of the interconnection metal line can make the interconnection metal line not prone to Bridge defects, and the limited movement amount of the interconnection metal line can make the interconnection metal line not prone to Necking and open circuit defects and the like, thereby ensuring that the expanded connection via and the moved interconnection metal line are corrected by using the optical critical correction method subsequently, which can enlarge the lithography process window of the interconnection metal line and the connection via more on the basis of meeting the circuit conduction, thereby improving the process feasibility of the interconnection metal line and the connection via, improving the product yield, and reducing the technology node of the interconnection metal line (for example, to about 25 nm), thereby improving the product competitiveness. In addition, the metal line and via layout optical proximity effect correction method provided in the application has universality for metal line and via layout, and has wide application prospects.

[0088] On the basis of the method described in the above embodiment, the metal line and via layout optical proximity effect correction device is further described in the embodiment to realize the method described in the above embodiment. Please refer to Figure 11 , Figure 11 The metal line and via layout optical proximity effect correction device provided in the embodiment of the application is specifically described. Please refer to Figure 11 , Figure 11 The metal line and via layout optical proximity effect correction device provided in the embodiment of the application is specifically described. Please refer to

[0089] (1) Acquisition module 401

[0090] The acquisition module 401 is configured to acquire original metal line and via layout, the original metal line and via layout including at least two metal line layers and a square via layer connecting metal lines respectively located in different layers, the metal line layer including an interconnection metal line, the interconnection metal line being connected with the connection via; in the plane of the layer where the interconnection metal line is located, the direction perpendicular to the extension direction of the interconnection metal line is the width direction, the projection of the connection via on the horizontal plane is within the projection of the interconnection metal line on the horizontal plane, and the size of the connection via in the width direction is equal to the width of the interconnection metal line; the metal line adjacent to the interconnection metal line in the width direction in the metal line layer is an influence metal line, the influence metal line including an influence metal line segment, the influence metal line segment being a projection area line segment of the connection via on the influence metal line in the width direction.

[0091] Specifically, the ratio of the size expansion amount of the connection via to the size of the connection via in the width direction can be α, 0.5≤α≤0.75.

[0092] (2) The hole expansion module 402

[0093] The hole expansion module 402 is configured to perform hole expansion processing on each connection via in the width direction according to the original metal line and via layout transmitted by the acquisition module 401 to form an expanded connection via, so that the size of the expanded connection via in the width direction is greater than the width of the interconnection metal line, and the size in the extension direction remains unchanged; the size expansion amount of the connection via in the width direction is determined according to the current photolithography process window.

[0094] (3) The line moving module 403

[0095] The line moving module 403 is configured to move each influence metal line segment in the width direction in a direction away from the interconnection metal line by a distance equal to the size expansion amount of the connection via in the width direction according to the original metal line and via layout transmitted by the acquisition module 401 and the size expansion amount of the connection via in the width direction transmitted by the hole expansion module 402, to form a pretreated metal line and via layout.

[0096] In some embodiments, when the hole expansion module 302 performs hole expansion processing on the connection via in the width direction to form an expanded connection via, the hole expansion module 302 can specifically perform: performing hole expansion processing on both sides of the connection via in the width direction towards the interconnection metal line by a first size expansion amount and a second size expansion amount, and the sum of the first size expansion amount and the second size expansion amount is equal to the size expansion amount of the connection via.

[0097] Specifically, the first size expansion amount and the second size expansion amount can be equal.

[0098] Specifically, there can be a first influence metal line and a second influence metal line on both sides of the interconnection metal line. The moving distance of the influence metal line segment of the first influence metal line is a first moving distance, and the moving distance of the influence metal line segment of the second influence metal line is a second moving distance. The first moving distance can be equal to the first size expansion amount, and the second moving distance can be equal to the second size expansion amount.

[0099] In some embodiments, the upper surface of the interconnection metal line can be connected with the first connection via, and the lower surface can be connected with the second connection via. The projection of the first connection via on the horizontal plane overlaps with the projection of the second connection via on the horizontal plane, and the size of the first connection via in the width direction can be the same as the size of the second connection via in the width direction, and the size of the first connection via in the extension direction can be smaller than the size of the second connection via in the extension direction.

[0100] Specifically, the hole expansion module 402 can specifically perform the following operations when expanding the connection via in the width direction to form the expanded connection via:

[0101] The first connection via is expanded in the width direction to form a first expanded connection via, and the second connection via is expanded in the width direction to form a second expanded connection via. The size expansion amount of the first connection via is greater than the size expansion amount of the second connection via.

[0102] Specifically, the influence metal line segment can include a first region influence metal line segment, a second region influence metal line segment, and a third region influence metal line segment. The first region influence metal line segment is the overlapping projection region segment of the first connection via and the second connection via on the influence metal line in the width direction. The second region influence metal line segment is the projection region segment of only the first connection via on the influence metal line in the width direction. The third region influence metal line segment is the projection region segment of only the second connection via on the influence metal line in the width direction.

[0103] Correspondingly, the line moving module 403 can specifically perform the following operations when moving the influence metal line segment in the width direction away from the interconnection metal line by a certain distance:

[0104] The first region influence metal line segment, the second region influence metal line segment, and the third region influence metal line segment are moved respectively. The moving distance of the first region influence metal line segment is equal to the sum of the size expansion amount of the first connection via and the size expansion amount of the second connection via. The moving distance of the second region influence metal line segment is equal to the size expansion amount of the first connection via. The moving distance of the third region influence metal line segment is equal to the size expansion amount of the second connection via.

[0105] In some embodiments, the ratio of the size expansion amount of the second connection via to the size expansion amount of the first connection via can be β, 0.4≤β≤0.8.

[0106] (4) Optical proximity correction module 404

[0107] The optical proximity correction module 404 is configured to perform optical proximity correction on the preprocessed metal line and via layout delivered by the shift module 403, to obtain a corrected metal line and via layout.

[0108] In implementation, the above modules can be implemented as independent entities, or can be combined as one or more entities. The implementation of the above modules can refer to the method embodiments described above, and will not be described here.

[0109] The embodiments of the present application also provide a computer readable storage medium, which stores a computer program. The computer program is suitable for being loaded by a processor to execute the method described in the above embodiments.

[0110] Those skilled in the art can understand that all or part of the steps of the various methods of the above embodiments can be completed by instructions, or by relevant hardware controlled by the instructions. The instructions can be stored in a computer readable storage medium, and loaded and executed by a processor.

[0111] To this end, the embodiments of the present application also provide a computer readable storage medium, which stores a computer program. The computer program can be loaded by a processor to execute the steps of any one of the metal line and via layout optical proximity effect correction methods provided by the embodiments of the present application. For example, the computer program can execute the following steps:

[0112] obtaining an original metal line and via layout, the original metal line and via layout including at least two metal line layers and a square via layer connecting metal lines in different layers, the metal line layers including interconnection metal lines, the interconnection metal lines being connected with the connection vias; in the plane of the layer where the interconnection metal line is located, the direction perpendicular to the extension direction of the interconnection metal line is the width direction, the projection of the connection via on the horizontal plane is within the projection of the interconnection metal line on the horizontal plane, and the size of the connection via in the width direction is equal to the width of the interconnection metal line; the metal line adjacent to the interconnection metal line in the width direction in the metal line layer is an influence metal line, the influence metal line including an influence metal line segment, the influence metal line segment being a projection area line segment of the connection via on the influence metal line in the width direction;

[0113] The connection via is expanded in the width direction to form an expanded connection via, so that the size of the expanded connection via in the width direction is greater than the width of the interconnection metal line, and the size in the extension direction remains unchanged; the size expansion of the connection via in the width direction is determined according to the current photolithography process window;

[0114] The metal line segment and the connection via are translated in the width direction away from the interconnection metal line by a distance equal to the size expansion of the connection via in the width direction, to form a pretreated metal line and via layout;

[0115] The pretreated metal line and via layout is subjected to optical proximity correction to obtain a corrected metal line and via layout.

[0116] The specific implementation of each operation can refer to the foregoing embodiments, which will not be repeated here.

[0117] The computer readable storage medium can include a read-only memory (ROM), a random access memory (RAM), a magnetic disk or an optical disk, etc.

[0118] Due to the computer program stored in the computer readable storage medium, the steps of any of the metal line and via layout optical proximity effect correction methods provided by the embodiments of the present application can be performed, and thus the beneficial effects of the metal line and via layout optical proximity effect correction methods provided by the embodiments of the present application can be achieved. Details are described in the foregoing embodiments, which will not be repeated here.

[0119] The metal line and via layout optical proximity effect correction method, device and computer readable storage medium provided by the embodiments of the present application are described in detail above, and specific examples are applied to explain the principles and implementation manners of the present application. The above examples are only used to help understand the method and its core idea of the present application; meanwhile, for those skilled in the art, according to the idea of the present application, the specific implementation manner and application range will be changed, and the above description should not be understood as a limitation of the present application.

Claims

1. A method for correcting the optical proximity effect in metal wire and via patterns, characterized in that, include: Obtain the original metal wire and via layout, which includes at least two metal wire layers and a square via layer connecting the metal wires located in different layers. The metal wire layers include interconnecting metal wires connected to the connecting vias. In the plane of the layer containing the interconnecting metal wires, the direction perpendicular to the extension direction of the interconnecting metal wires is the width direction. The projection of the connecting vias onto the horizontal plane is within the projection of the interconnecting metal wires onto the horizontal plane, and the size of the connecting vias in the width direction is equal to the width of the interconnecting metal wires. The metal wires adjacent to the interconnecting metal wires in the width direction in the metal wire layers are the influencing metal wires. The influencing metal wires include influencing metal line segments, which are the projection area segments of the connecting vias along the width direction onto the influencing metal wires. Each of the aforementioned vias is enlarged in the width direction to form an enlarged via, such that the size of the enlarged via in the width direction is larger than the width of the interconnect metal line, while the size in the extension direction remains unchanged; the amount of enlargement of the via in the width direction is determined according to the current photolithography process window; Each of the aforementioned influencing metal line segments is translated a certain distance in the width direction away from the interconnecting metal line. The translation distance is equal to the size increase of the connecting via in the width direction, thus forming a pre-processed metal line and via layout. Optical proximity correction is performed on the pre-processed metal line and via pattern to obtain the corrected metal line and via pattern.

2. The method according to claim 1, characterized in that, The ratio of the enlargement of the connecting through hole to the dimension of the connecting through hole in the width direction is α, where 0.5 ≤ α ≤ 0.

75.

3. The method according to claim 1, characterized in that, The connecting through hole is enlarged in the width direction to form an enlarged connecting through hole, specifically as follows: The connecting through hole is enlarged by a first size increase and a second size increase on both sides of the interconnecting metal line in the width direction, and the sum of the first size increase and the second size increase is equal to the size increase of the connecting through hole.

4. The method according to claim 3, characterized in that, The first size increase is equal to the second size increase.

5. The method according to claim 3, characterized in that, There is an influencing metal line on each side of the interconnecting metal line, which is the first influencing metal line and the second influencing metal line; The moving distance of the first influencing metal line segment is the first moving distance, and the moving distance of the second influencing metal line segment is the second moving distance. The first moving distance is equal to the first size increase, and the second moving distance is equal to the second size increase.

6. The method according to claim 1, characterized in that, The upper surface of the interconnecting metal wire is connected to the first connecting through hole, and the lower surface is connected to the second connecting through hole; the projection of the first connecting through hole on the horizontal plane overlaps with the projection of the second connecting through hole on the horizontal plane, and the first connecting through hole and the second connecting through hole have the same size in the width direction, and the size of the first connecting through hole in the extension direction is smaller than the size of the second connecting through hole in the extension direction. The connecting through hole is enlarged in the width direction to form an enlarged connecting through hole. Specifically, the first connecting through hole is enlarged in the width direction to form a first enlarged connecting through hole, and the second connecting through hole is enlarged in the width direction to form a second enlarged connecting through hole. The enlargement amount of the first connecting through hole is greater than the enlargement amount of the second connecting through hole. The influencing metal segment includes a first region influencing metal segment, a second region influencing metal segment, and a third region influencing metal segment. The first region influencing metal segment is the overlapping projection area segment of the first connecting through hole and the second connecting through hole along the width direction on the influencing metal line. The second region influencing metal segment is the projection area segment of only the first connecting through hole along the width direction on the influencing metal line. The third region influencing metal segment is the projection area segment of only the second connecting through hole along the width direction on the influencing metal line. The affected metal segment is translated a certain distance in the width direction away from the interconnecting metal line, specifically: The metal segments affected by the first region, the second region, and the third region are respectively translated; the translation distance of the metal segments affected by the first region is equal to the sum of the size increase of the first connecting through hole and the size increase of the second connecting through hole, the translation distance of the metal segments affected by the second region is equal to the size increase of the first connecting through hole, and the translation distance of the metal segments affected by the third region is equal to the size increase of the second connecting through hole.

7. The method according to claim 6, characterized in that, The ratio of the size increase of the second connecting through hole to the size increase of the first connecting through hole is β, where 0.4 ≤ β ≤ 0.

8.

8. An optical proximity effect correction device for metal wire and via layout, characterized in that, include: An acquisition module is used to acquire an original metal wire and via layout. The original metal wire and via layout includes at least two metal wire layers and a square via layer connecting the metal wires located in different layers. The metal wire layers include interconnecting metal wires connected to the connecting vias. In the plane of the layer containing the interconnecting metal wires, the direction perpendicular to the extension direction of the interconnecting metal wires is the width direction. The projection of the connecting vias on the horizontal plane is within the projection of the interconnecting metal wires on the horizontal plane, and the size of the connecting vias in the width direction is equal to the width of the interconnecting metal wires. The metal wires adjacent to the interconnecting metal wires in the width direction in the metal wire layers are influencing metal wires. The influencing metal wires include influencing metal line segments, which are the line segments of the projection area of ​​the connecting vias along the width direction on the influencing metal wires. The via enlargement module is used to enlarge each of the connecting vias in the width direction according to the original metal line and via layout transmitted by the acquisition module, so that the size of the enlarged connecting via in the width direction is larger than the width of the interconnect metal line, while the size in the extension direction remains unchanged; the amount of enlargement of the size of the connecting via in the width direction is determined according to the current photolithography process window; The line shifting module is used to translate each of the affected metal line segments in the width direction away from the interconnecting metal lines according to the original metal line and via layout transmitted by the acquisition module and the size expansion amount of the connecting via transmitted by the via expansion module, and to form a pre-processed metal line and via layout. An optical proximity correction module is used to perform optical proximity correction on the preprocessed metal line and via layout transmitted by the line shifting module to obtain a corrected metal line and via layout.

9. The apparatus according to claim 8, characterized in that, The upper surface of the interconnecting metal wire is connected to the first connecting through hole, and the lower surface is connected to the second connecting through hole; the projection of the first connecting through hole on the horizontal plane overlaps with the projection of the second connecting through hole on the horizontal plane, and the first connecting through hole and the second connecting through hole have the same size in the width direction, and the size of the first connecting through hole in the extension direction is smaller than the size of the second connecting through hole in the extension direction. When the hole-expanding module expands the connecting through hole in the width direction to form an enlarged connecting through hole, it specifically performs the following: expanding the first connecting through hole in the width direction to form a first enlarged connecting through hole, and expanding the second connecting through hole in the width direction to form a second enlarged connecting through hole; the size expansion of the first connecting through hole is greater than the size expansion of the second connecting through hole. The influencing metal segment includes a first region influencing metal segment, a second region influencing metal segment, and a third region influencing metal segment. The first region influencing metal segment is the overlapping projection area segment of the first connecting through hole and the second connecting through hole along the width direction on the influencing metal line. The second region influencing metal segment is the projection area segment of only the first connecting through hole along the width direction on the influencing metal line. The third region influencing metal segment is the projection area segment of only the second connecting through hole along the width direction on the influencing metal line. When the line-shifting module translates the influencing metal line segment a certain distance away from the interconnecting metal line in the width direction, it specifically performs the following: The metal segments affected by the first region, the second region, and the third region are respectively translated; the translation distance of the metal segments affected by the first region is equal to the sum of the size increase of the first connecting through hole and the size increase of the second connecting through hole, the translation distance of the metal segments affected by the second region is equal to the size increase of the first connecting through hole, and the translation distance of the metal segments affected by the third region is equal to the size increase of the second connecting through hole.

10. A computer-readable storage medium, characterized in that, The computer-readable storage medium stores a computer program adapted to be loaded by a processor to perform the method of any one of claims 1-7.

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