Amplitude limiter, chip and receiver

Abstract

The invention provides an amplitude limiter, a chip and a receiver. By designing the positions of the microstrip line and the diode unit in the amplitude limiter, the power of the diode unit in the amplitude limiter can be averagely distributed, and the distributed power is synthesized and output, so that the power loss of the amplitude limiter can be reduced, and the power utilization rate of an input signal can be improved; by applying voltage to the diode unit, the working frequency of the amplitude limiter can be widened by adjusting the junction capacitance of the diode unit. In addition, the invention further provides a chip comprising the amplitude limiter and a receiver, and finally, the amplitude limiter, the chip and the receiver which are high in power utilization rate, good in power distribution performance and wide in working frequency band can be achieved.

Description

Technical Field

[0001] The present invention relates to the field of integrated circuits, and in particular to a limiter, a chip and a receiver. Background Art

[0002] A limiter is an electronic device that is mainly used to control the signal amplitude within a predetermined range. By limiting the amplitude of the input signal, the signal above or below the threshold is compressed to within the set amplitude. Therefore, limiters are widely used in communication transmission, video and audio signal processing and other fields.

[0003] In the field of radio frequency communication, the limiter is an important nonlinear element that can limit the amplitude of the output signal when the input power of the signal exceeds a certain threshold, thereby protecting the subsequent receiver or amplifier from damage by high-power signals. However, in high-power radio frequency circuits, spatial electromagnetic coupling will cause power leakage, which will lead to uneven power distribution between diodes. When the transmission power exceeds the withstand voltage of the diode, the diode will burn out. Therefore, how to reasonably distribute the power between the electronic devices inside the limiter has become one of the problems that technicians in this field need to solve urgently.

[0004] It should be noted that the above introduction to the technical background is only for the convenience of providing a clear and complete description of the technical solutions of the present invention and for the convenience of understanding by those skilled in the art. It cannot be considered that the above technical solutions are well known to those skilled in the art simply because these solutions are described in the background technology section of the present invention. Summary of the invention

[0005] In view of the above-mentioned shortcomings of the prior art, an object of the present invention is to provide a limiter, a chip and a receiver, which are used to solve the problem of unreasonable power distribution of electronic components inside the limiter in the prior art.

[0006] To achieve the above-mentioned purpose and other related purposes, the present invention provides a limiter, which at least includes: a first microstrip line, a first-stage limiting module and a fifth microstrip line; the first microstrip line receives and transmits a radio frequency input signal; the input end of the first-stage limiting module is connected to the output end of the first microstrip line, including a first limiting path and a second limiting path connected in parallel; wherein the first limiting path and the second limiting path both include a second microstrip line, a third microstrip line and a fourth microstrip line connected in series in sequence, and a first diode unit and a second diode unit; the first microstrip line and the fourth microstrip line are located on both sides of the third microstrip line, and the first diode unit and the second diode unit are located on both sides of the third microstrip line; the first The diode unit and the second diode unit each include n diodes, n is a natural number greater than or equal to 1, when n is greater than or equal to 2, the n diodes in the first diode unit and the second diode unit are connected in series in the same direction; the first end of the first diode unit is grounded, and the second end is connected to the output of the second microstrip line; the first end of the second diode unit is connected to the output of the third microstrip line, and the second end is grounded; the first end of the first diode unit and the second diode unit is a positive electrode, and the second end is a negative electrode; or the first end of the first diode unit and the second diode unit is a negative electrode, and the second end is a positive electrode; the first end of the fifth microstrip line is connected to the output end of the first-stage limiting module, and the second end serves as the output end of the limiter.

[0007] Optionally, the first limiting path and the second limiting path both further include a first inductor; a first end of the first inductor is connected to the second microstrip line, and a second end is grounded; and the first inductor is located on either side of the third microstrip line.

[0008] Optionally, when n is greater than or equal to 2, on a path from the third microstrip line to the ground line, a distance between adjacent diodes in the first diode unit or the second diode unit decreases sequentially.

[0009] Optionally, the fifth microstrip line is located on an extension line of the first microstrip line, and the first limiting path and the second limiting path are symmetrically distributed based on the first microstrip line.

[0010] Optionally, the fourth microstrip line in the first limiting path and the second limiting path includes a first part and a second part; the first end of the first part is connected to the output end of the third microstrip line, and the second end is connected to the first end of the second part; the second end of the second part serves as the output end of the first-stage limiting module; the first microstrip line, the fifth microstrip line and the first part of the fourth microstrip line are parallel; the second microstrip line is arranged on the extension line of the third microstrip line and perpendicular to the first microstrip line.

[0011] Optionally, the limiter also includes a second-stage limiting module, which includes a third diode unit and a fourth diode unit; the third diode unit is reversely connected to the fourth diode unit, and the third diode unit and the fourth diode unit both include m diodes, where m is a natural number greater than or equal to 1; when m is greater than or equal to 2, the m diodes in the third diode unit and the fourth diode unit are all connected in series in the same direction; the first end of the third diode unit is connected to the output end of the first-stage limiting module, and the second end is grounded; the first end of the fourth diode unit is grounded, and the second end is connected to the output end of the first-stage limiting module.

[0012] Optionally, the limiter further includes a second inductor, and the second inductor is connected between the output end of the first-stage limiting module and the first end of the fifth microstrip line.

[0013] Optionally, the limiter also includes a third-stage limiting module, which includes a fifth diode unit and a sixth diode unit; the fifth diode unit is reversely connected to the sixth diode unit and is located on both sides of the fifth microstrip line, and the fifth diode unit and the sixth diode unit each include p diodes, p is a natural number greater than or equal to 1; when p is greater than or equal to 2, the p diodes in the fifth diode unit and the sixth diode unit are all connected in series in the same direction; the first end of the fifth diode unit is connected to the fifth microstrip line, and the second end is grounded; the first end of the sixth diode unit is grounded, and the second end is connected to the fifth microstrip line.

[0014] Optionally, a first voltage is applied to one pole of any diode in the first diode unit close to the ground line, and a second voltage is applied to one pole of any diode in the second diode unit close to the ground line.

[0015] To achieve the above object and other related objects, the present invention further provides a chip, which at least includes: a limiter.

[0016] To achieve the above object and other related objects, the present invention further provides a receiver, which at least includes: a limiter.

[0017] As described above, the limiter, chip and receiver of the present invention have the following beneficial effects:

[0018] 1. By designing the spatial positions of the diode unit and the microstrip line in the limiter, the present invention can evenly distribute the power of the diode unit in the limiter; by combining and outputting the evenly distributed power of the limiter, the present invention can improve the power utilization rate of the limiter.

[0019] 2. By adding an inductor to the asymmetric diode unit of the limiter, the present invention can better perform impedance matching for the limiter and reduce the loss during signal transmission.

[0020] 3. By providing an external voltage to one pole of any diode in the diode unit close to the ground line, the present invention can adjust the junction capacitance of the diode unit so that the operating frequency of the limiter is wider.

[0021] 4. By adjusting the distance between adjacent diodes in the asymmetric diode unit, the present invention can balance the heat generation and heat dissipation of diodes at different positions. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] Figure 1 Shown is a circuit schematic for a symmetrical limiter.

[0023] Figure 2 A first circuit diagram of the limiter of the present invention is shown.

[0024] Figure 3 A second circuit diagram of the limiter of the present invention is shown.

[0025] Figure 4 A third circuit diagram of the limiter of the present invention is shown.

[0026] Figure 5 A fourth circuit diagram of the limiter of the present invention is shown.

[0027] Figure 6 It is a fifth circuit diagram of the limiter of the present invention.

[0028] Figure 7 Shown is the circuit layout of the chip of the present invention.

[0029] Component number description

[0030] 11. First diode

[0031] 12 Second diode

[0032] 13 Microstrip line

[0033] 21 First microstrip line

[0034] 22 First level limiting module

[0035] 23 Fifth microstrip line

[0036] 221 First limiting path

[0037] 222 Second limiting path

[0038] 22a Second microstrip line

[0039] 22b The third microstrip line

[0040] 22c Fourth microstrip line

[0041] 22d First diode unit

[0042] 22e Second diode unit

[0043] 22f First Inductor

[0044] 22g First Voltage

[0045] 22h Second voltage

[0046] 24a The third diode unit

[0047] 24b Fourth diode unit

[0048] 25 Second Inductor

[0049] 26a Fifth diode unit

[0050] 26b Sixth diode unit DETAILED DESCRIPTION

[0051] The following describes the embodiments of the present invention through specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the contents disclosed in this specification. The present invention can also be implemented or applied through other different specific embodiments, and the details in this specification can also be modified or changed in various ways based on different viewpoints and applications without departing from the spirit of the present invention.

[0052] See also Figure 1-Figure 7 It should be noted that the illustrations provided in this embodiment are only used to illustrate the basic concept of the present invention in a schematic manner, and the illustrations only show components related to the present invention rather than being drawn according to the number, shape and size of components in actual implementation. In actual implementation, the type, quantity and proportion of each component may be changed arbitrarily, and the component layout may also be more complicated.

[0053] like Figure 1 As shown, a symmetrical limiter is provided, in which the first diode 11 and the second diode 12 of the symmetrical limiter are symmetrically distributed based on the microstrip line 13, so that the first diode 11 and the second diode 12 can perform positive and negative symmetrical signal limiting. However, due to power leakage caused by spatial coupling, the first diode 11 will withstand higher power than the second diode 12. Therefore, in fact, the symmetrical limiter cannot achieve symmetrical positive and negative signal limiting.

[0054] In order to make the power distribution of the electronic devices in the limiter more reasonable, the present invention designs the spatial position of the diode unit and the microstrip line in the limiter, which can evenly distribute the power of the diode unit, and combine the signals of the diode unit after the power is evenly distributed and output. The present invention can improve the power utilization rate of the input signal. The specific scheme of the present invention is as follows:

[0055] Embodiment 1

[0056] like Figure 2 As shown, this embodiment provides a limiter, which includes: a first microstrip line 21 , a first-stage limiting module 22 and a fifth microstrip line 23 .

[0057] like Figure 2 As shown, the first microstrip line 21 receives and transmits a radio frequency input signal.

[0058] Specifically, in this embodiment, the frequency of the RF input signal is between 3kHz and 300GHz, including but not limited to 500kHz, 1MHz, 10MHz, 100MHz, 1GHz, 10GHz, 100GHz, and 200GHz. In actual applications, the frequency of the RF input signal can be set as needed and is not limited to this embodiment.

[0059] like Figure 2 As shown, the input end of the first-stage limiting module 22 is connected to the output end of the first microstrip line 21 , and includes a first limiting path 221 and a second limiting path 222 connected in parallel.

[0060] Specifically, in this embodiment, the first-stage limiting module 22 receives the RF input signal transmitted from the first microstrip line 21, and the RF input signal enters the first limiting path 221 and the second limiting path 222 respectively. The two signals are limited after passing through the two paths. Since the first limiting path 221 and the second limiting path 222 are connected in parallel, the two signals are combined and output through the fifth microstrip line 23. The power of the combined output signal is greatly retained, thereby improving the power utilization rate of the RF input signal.

[0061] like Figure 2 As shown, the first limiting path 221 and the second limiting path 222 both include a second microstrip line 22a, a third microstrip line 22b and a fourth microstrip line 22c connected in series in sequence, and a first diode unit 22d and a second diode unit 22e; the first microstrip line 21 and the fourth microstrip line 22c are respectively located on both sides of the third microstrip line 22b, and the first diode unit 22d and the second diode unit 22e are located on both sides of the third microstrip line 22b.

[0062] Specifically, Figure 2As shown, in this embodiment, the first microstrip line 21 and the first diode unit 22d are located on the same side of the third microstrip line 22b and are arranged in parallel, and the second diode unit 22e and the first part of the fourth microstrip line 22c are located on the same side of the third microstrip line 22b and are arranged in parallel.

[0063] Specifically, the first diode unit 22d and the second diode unit 22e each include n diodes, where n is a natural number greater than or equal to 1. When n is greater than or equal to 2, the diodes of the first diode unit 22d and the second diode unit 22e are connected in series in the same direction; the first end of the first diode unit 22d is grounded, and the second end is connected to the output of the second microstrip line 22a; the first end of the second diode unit 22e is connected to the output of the third microstrip line 22b, and the second end is grounded; the first end of the first diode unit 22d and the second diode unit 22e is a positive electrode, and the second end is a negative electrode; or the first end of the first diode unit 22d and the second diode unit 22e is a negative electrode, and the second end is a positive electrode.

[0064] More specifically, in the present embodiment, the positive electrode of the nth diode connected in series in the same direction is connected to the negative electrode of the n-1th diode, and the negative electrode of the nth diode is connected to the positive electrode of the n+1th diode; or the negative electrode of the nth diode is connected to the positive electrode of the n-1th diode, and the positive electrode of the nth diode is connected to the negative electrode of the n+1th diode. In the present embodiment, the first diode unit 22d performs negative amplitude limiting on the RF signal, the first end of the first diode unit 22d is grounded, and the second end is connected to the output of the second microstrip line, and the second diode unit 22e performs positive amplitude limiting on the RF signal, the first end of the second diode unit 22e is connected to the output of the third microstrip line 22b, and the second end is grounded. Among them, the more diodes there are in the first diode unit 22d and the second diode unit 22e, the more obvious the amplitude limiting effect of the amplitude limiter on the RF signal. In practical applications, the first diode unit 22d and the second diode unit 22e are selected as needed to perform positive amplitude limiting or negative amplitude limiting on the RF signal, which is not limited to the present embodiment.

[0065] More specifically, in this embodiment, when n is greater than or equal to 2, the spacing between adjacent diodes in the first diode unit 22d is the first distance or the spacing between adjacent diodes in the second diode unit 22e is the first distance, and the value of the first distance gradually decreases on the path from the third microstrip line 22b to the ground line. This is because the closer the distance to the ground line is, the smaller the heat loss of the diode is, so reducing the spacing between adjacent diodes close to the ground line is not only beneficial to the heat dissipation of the diode unit, but also beneficial to the wiring of the limiter, and improving the transmission efficiency of the radio frequency signal. In practical applications, the distance between adjacent diodes in the diode unit is adjusted as needed, not limited to this embodiment.

[0066] As another implementation of this embodiment, the fourth microstrip line 22c in the first limiting path 221 and the second limiting path 222 includes a first part and a second part; the first end of the first part is connected to the output end of the third microstrip line 22b, the second end of the first part is connected to the first end of the second part, and the second end of the second part serves as the output end of the first stage limiting module; the first microstrip line 21, the fifth microstrip line 23 are parallel to the first part of the fourth microstrip line 22c; the second microstrip line 22a is located on the extension line of the third microstrip line 22b and is arranged perpendicular to the first microstrip line 21. Figure 2 As shown, in this embodiment, the second portion of the fourth microstrip line 22c is a broken line. In practical applications, the second portion of the fourth microstrip line 22c may also be a straight line, which is not limited to this embodiment.

[0067] Since in a radio frequency circuit, the larger the vertical projection area of ​​an electronic device on another electronic device, the higher the possibility of resonance between the two electronic devices, the electronic devices arranged on the same side are prone to resonance and power leakage. In this embodiment, the first microstrip line 21 resonates with the first diode unit 22d, and the power of the first microstrip line 21 partially leaks into the first diode unit 22d, the second diode unit 22e resonates with the first part of the fourth microstrip line 22c, and the power of the first part of the fourth microstrip line 22c partially leaks into the second diode unit 22e. By adjusting the resistivity of the third microstrip line 22b, this embodiment can adjust the power difference between the first diode unit 22d and the second diode unit 22e to within a preset range. , to achieve the purpose of evenly distributing the power of the first diode unit 22d and the second diode unit 22e; specifically, the preset range is [0mW-200mW], including but not limited to 2mW, 4mW, 6mW, 8mW, 10mW, 12mW, 14mW, 16mW, 18mW, 20mW, 40mW, 60W, 80mW, 100mW, 120mW, 140mW, 160mW, and 180mW. In actual applications, the value of the preset range can be set as needed, which is not limited to this embodiment.

[0068] like Figure 2 As shown, the first end of the fifth microstrip line 23 is connected to the output end of the first-stage limiting module, and the second end serves as the output end of the limiter.

[0069] Specifically, in this embodiment, the fifth microstrip line 23 is located on the extension line of the first microstrip line 21, and the first limiting path 221 and the second limiting path 222 are symmetrically distributed based on the first microstrip line 21, that is, the first limiting path 221 and the second limiting path 222 use the straight line formed by the first microstrip line 21 and the fifth microstrip line 23 as the symmetry axis. As an example, Figure 2As shown, the second microstrip line 22a of the first limiting passage 221 and the second limiting passage 222 is symmetrically distributed based on the first microstrip line 21, the first diode unit 22d of the first limiting passage 221 and the second limiting passage 222 is symmetrically distributed based on the first microstrip line 21, the third microstrip line 22b of the first limiting passage 221 and the second limiting passage 222 is symmetrically distributed based on the first microstrip line 21, the second diode unit 22e of the first limiting passage 221 and the second limiting passage 222 is symmetrically distributed based on the first microstrip line 21, and the fourth microstrip line 22c of the first limiting passage 221 and the second limiting passage 222 is symmetrically distributed based on the first microstrip line 21.

[0070] Embodiment 2

[0071] like Figure 3 As shown, this embodiment provides a limiter. The difference between this embodiment and the first embodiment is that the spatial positions of the first diode unit 22d and the second diode unit 22e are different.

[0072] Specifically, Figure 3 As shown, the first microstrip line 21 and the second diode unit 22e are located on the same side and are arranged in parallel, and the first diode unit 22d and the first part of the fourth microstrip line 22c are located on the same side and are parallel. In this embodiment, the first microstrip line 21 resonates with the second diode unit 22e, and the power of the first microstrip line 21 partially leaks into the second diode unit 22e, the first diode unit 22d resonates with the first part of the fourth microstrip line 22c, and the power of the first part of the fourth microstrip line 22c partially leaks into the first diode unit 22d. By adjusting the resistivity of the third microstrip line 22b, this embodiment can adjust the power difference between the first diode unit 22d and the second diode unit 22e to a preset range, so as to overcome the problem of uneven power distribution between the first diode unit 22d and the second diode unit 22e. Specifically, the preset range is [0mW-200mW], including but not limited to 2mW, 4mW, 6mW, 8mW, 10mW, 12mW, 14mW, 16mW, 18mW, 20mW, 40mW, 60W, 80mW, 100mW, 120mW, 140mW, 160mW, and 180mW. In actual applications, the value of the preset range can be set as needed, without being limited to this embodiment.

[0073] Embodiment 3

[0074] like Figure 4As shown, this embodiment provides a limiter. The difference between this embodiment and embodiments 1 to 2 is that: the first limiting path 221 and the second limiting path 222 of this embodiment also include a first inductor 22f; the first end of the first inductor 22f is connected to the second microstrip line 22a, and the second end is grounded; the first inductor 22f is located on either side of the third microstrip line 22b.

[0075] Specifically, in this embodiment, the purpose of providing the first inductor 22f is to perform impedance matching between the first limiting path 221 and the second limiting path 222, so as to reduce the transmission loss of the limiter.

[0076] As an example, Figure 4 As shown, the first microstrip line 21 and the first diode unit 22d are located on the same side of the third microstrip line 22b and are arranged in parallel, and the second diode unit 22e, the first inductor 22f and the first part of the fourth microstrip line 22c are located on the same side of the third microstrip line 22b and are arranged in parallel. Specifically, the first microstrip line 21 resonates with the first diode unit 22d, and the power of the first microstrip line 21 partially leaks into the first diode unit 22d, the second diode unit 22e, the first inductor 22f and the first part of the fourth microstrip line 22c resonate, and the power of the first inductor 22f and the first part of the fourth microstrip line 22c partially leaks into the second diode unit 22e. By adjusting the resistivity of the third microstrip line 22b, this embodiment can adjust the power difference between the first diode unit 22d and the second diode unit 22e to a preset range, so as to achieve the purpose of reasonably allocating the power of the first diode unit 22d and the second diode unit 222e. Specifically, the preset range is [0mW-200mW], including but not limited to 2mW, 4mW, 6mW, 8mW, 10mW, 12mW, 14mW, 16mW, 18mW, 20mW, 40mW, 60W, 80mW, 100mW, 120mW, 140mW, 160mW, and 180mW. In actual applications, the value of the preset range can be set as needed, without being limited to this embodiment.

[0077] As another example, Figure 5As shown, the first inductor 22f, the first microstrip line 21 and the first diode unit 22d are located on the same side of the third microstrip line 22b and are arranged in parallel, and the second diode unit 22e and the first part of the fourth microstrip line 22c are located on the same side of the third microstrip line 22b and are arranged in parallel. The first inductor 22f, the first microstrip line 21 and the first diode unit 22d resonate, and the power of the first inductor 22f and the first microstrip line 21 partially leaks into the first diode unit 22d, the second diode unit 22e resonates with the first part of the fourth microstrip line 22c, and the power of the first part of the fourth microstrip line 22c partially leaks into the second diode unit 22e. By adjusting the resistivity of the third microstrip line 22b, this embodiment can adjust the power difference between the first diode unit 22d and the second diode unit 22e to a preset range, so as to achieve the purpose of reasonably allocating the power of the first diode unit 22d and the second diode unit 22e. Specifically, the preset range is [0mW-200mW], including but not limited to 2mW, 4mW, 6mW, 8mW, 10mW, 12mW, 14mW, 16mW, 18mW, 20mW, 40mW, 60W, 80mW, 100mW, 120mW, 140mW, 160mW, and 180mW. In actual applications, the value of the preset range can be set as needed, without being limited to this embodiment.

[0078] It should be noted that, in practical applications, the first inductor 22f can also be set on any side of the third microstrip line 22b in the second embodiment, and the positions of the first inductor 22f, the first diode unit 22d and the second diode unit 22e can be set as needed, which will not be repeated here.

[0079] Embodiment 4

[0080] This embodiment provides a limiter 1. The difference between this embodiment and the first to third embodiments is that:

[0081] like Figure 6 As shown, a first voltage 22g is applied to one pole of any diode in the first diode unit 22d close to the ground line, or a second voltage 22h is applied to one pole of any diode in the second diode unit 22e close to the ground line.

[0082] Specifically, in this embodiment, a first voltage 22g is applied to one pole of any diode close to the ground line in the first diode unit 22d of the first limiting path 221 and the second limiting path 222, the first voltage 22g is a positive voltage or a negative voltage, the first voltage 22g is symmetrical based on the first microstrip line 21, when the first voltage 22g is applied, the overall junction capacitance of the first diode unit 22d can be freely adjusted, thereby increasing the operating frequency width of the limiter. Correspondingly, in this embodiment, a second voltage 22h is applied to one pole of any diode close to the ground line in the second diode unit 22e of the first limiting path 221 and the second limiting path 222, the second voltage 22h is a positive voltage or a negative voltage, the second voltage 22h is symmetrical based on the first microstrip line 21, the overall junction capacitance of the second diode unit 22e can be freely adjusted, thereby further increasing the operating frequency width of the limiter. In practical applications, it is selected to apply the first voltage 22g and the second voltage 22h simultaneously in the limiter or to selectively apply the first voltage 22g and the second voltage 22h as needed, which is not limited to this embodiment.

[0083] like Figure 6 As shown, the limiter also includes a second-stage limiting module, which includes a third diode unit 24a and a fourth diode unit 24b; the first ends of the third diode unit 24a and the fourth diode unit 24b are positive electrodes, and the second ends are negative electrodes, or the first ends of the third diode unit 24a and the fourth diode unit 24b are negative electrodes, and the second ends are positive electrodes. The third diode unit 24a and the fourth diode unit 24b each include m diodes, where m is a natural number greater than or equal to 1. When m is greater than or equal to 2, the diodes of the third diode unit 24a and the fourth diode unit 24b are both connected in series in the same direction; the first end of the third diode unit 24a is connected to the output end of the first-stage limiting module, and the second end is grounded; the first end of the fourth diode unit 24b is grounded, and the second end is connected to the output end of the first-stage limiting module.

[0084] Specifically, in this embodiment, the third diode unit 24a and the fourth diode unit 24b of the second stage limiting module are symmetrical based on the first microstrip line 21. When the power of the RF input signal is too large, the second limiting module can protect the circuit and suppress noise.

[0085] like Figure 6As shown, the limiter also includes a third-stage limiting module, which includes a fifth diode unit 26a and a sixth diode unit 26b; the fifth diode unit 26a and the sixth diode unit 26b are reversely connected and are located on both sides of the fifth microstrip line 23, the fifth diode unit 26a and the sixth diode unit 26b each include p diodes, p is a natural number greater than or equal to 1, when p is greater than or equal to 2, the diodes of the fifth diode unit 26a and the sixth diode unit 26b are connected in series in the same direction; the first end of the fifth diode unit 26a is connected to the fifth microstrip line, and the second end is grounded; the first end of the sixth diode unit 26b is grounded, and the second end is connected to the fifth microstrip line 23.

[0086] Specifically, in this embodiment, the fifth diode unit 26a and the sixth diode unit 26b of the third stage limiting module are symmetrical based on the fifth microstrip line 23. When the power of the RF input signal is too large, the third limiting module can protect the circuit and suppress noise.

[0087] like Figure 6 As shown, the limiter further includes a second inductor 25 , and the second inductor 25 is connected between the output end of the first-stage limiting module 22 and the first end of the fifth microstrip line 23 .

[0088] Specifically, in this embodiment, the second inductor 25 can be used to match the impedance between the first-stage limiting module 22 and the fifth microstrip line 23 to improve the transmission efficiency of the signal.

[0089] Embodiment 5

[0090] This embodiment provides a chip, and the chip of this embodiment includes: the limiter of embodiment 1 to embodiment 4.

[0091] Specifically, the chip of this embodiment can prevent signal distortion, improve signal anti-interference ability, etc. in the fields of audio, video and communication; as an example, Figure 7 As shown, this embodiment provides a circuit layout diagram of a limiter chip, the fifth microstrip line 23 is on the extension line of the first microstrip line 21, the first limiting path 221 and the second limiting path 222 are symmetrical based on the first microstrip line 21; the first diode unit 22d and the second diode unit 22e each include 3 diodes, and the distance between adjacent diodes gradually decreases on the path from the third microstrip line 22b to the ground line; the first diode unit 22d and the fourth microstrip line 22c are located on the same side of the third microstrip line 22b, and the second diode unit 22e, the first inductor 22f and the first microstrip line 21 are located on the same side of the third microstrip line 22b.

[0092] Embodiment 6

[0093] This embodiment provides a receiver, and the receiver of this embodiment includes: the limiter of Embodiment 1 to Embodiment 4.

[0094] Specifically, in this embodiment, the receiver is a radar receiver, and the limiter can prevent the damage to the radar receiver caused by the high-power signal; the electromagnetic characteristics of the receiver can be changed by changing the parameters such as the phase, frequency and power of the input signal.

[0095] In summary, the present invention designs a limiter that is not completely symmetrical in spatial position, and then combines the limited signals for output; the present invention balances the heat dissipation of diodes in different positions by adjusting the spacing of asymmetric diode units, adds inductance to asymmetric diode units to reduce the transmission loss of the limiter, and provides an external voltage to the diode units, thereby widening the working frequency width of the limiter. The present invention also adds a multi-stage limiting module to protect the limiter circuit. Ultimately, the present invention can improve the power utilization rate of the limiter, make the working frequency of the limiter wider, and reduce the power loss of the limiter. Therefore, the present invention effectively overcomes the various shortcomings of the prior art and has a high industrial utilization value.

[0096] The above embodiments are merely illustrative of the principles and effects of the present invention, and are not intended to limit the present invention. Anyone familiar with the art may modify or alter the above embodiments without departing from the spirit and scope of the present invention. Therefore, all equivalent modifications or alterations made by a person of ordinary skill in the art without departing from the spirit and technical concept disclosed by the present invention shall still be covered by the claims of the present invention.

Claims

1. A limiter, characterized in that: The limiter at least comprises: A first microstrip line, a first-stage limiting module and a fifth microstrip line; The first microstrip line receives and transmits a radio frequency input signal; The input end of the first-stage limiting module is connected to the output end of the first microstrip line, including a first limiting path and a second limiting path in parallel; wherein the first limiting path and the second limiting path both include a second microstrip line, a third microstrip line and a fourth microstrip line connected in series in sequence, and a first diode unit and a second diode unit; the first microstrip line and the fourth microstrip line are located on both sides of the third microstrip line, and the first diode unit and the second diode unit are located on both sides of the third microstrip line; the first diode unit and the second diode unit each include n diodes, n is a natural number greater than or equal to 1, when n is greater than or equal to 2, the n diodes in the first diode unit and the second diode unit are connected in series in the same direction; the first end of the first diode unit is grounded, and the second end is connected to the the output of the second microstrip line; the first end of the second diode unit is connected to the output of the third microstrip line, and the second end is grounded; the first end of the first diode unit and the second diode unit is a positive electrode, and the second end is a negative electrode; or the first end of the first diode unit and the second diode unit is a negative electrode, and the second end is a positive electrode; The first end of the fifth microstrip line is connected to the output end of the first-stage limiting module, and the second end serves as the output end of the limiter.

2. The limiter according to claim 1, characterized in that: The first limiting path and the second limiting path both further include a first inductor; a first end of the first inductor is connected to the second microstrip line, and a second end is grounded; the first inductor is located on either side of the third microstrip line.

3. The limiter according to claim 1, characterized in that: When n is greater than or equal to 2, on the path from the third microstrip line to the ground line, the distance between adjacent diodes in the first diode unit or the second diode unit decreases successively.

4. The limiter according to claim 1, characterized in that: The fifth microstrip line is located on an extension line of the first microstrip line, and the first limiting path and the second limiting path are symmetrically distributed based on the first microstrip line.

5. The limiter according to claim 1 or 4, characterized in that: The fourth microstrip line in the first limiting path and the second limiting path includes a first part and a second part; the first end of the first part is connected to the output end of the third microstrip line, and the second end is connected to the first end of the second part; the second end of the second part serves as the output end of the first stage limiting module; The first microstrip line, the fifth microstrip line and the first portion of the fourth microstrip line are parallel; The second microstrip line is arranged on an extension line of the third microstrip line and is perpendicular to the first microstrip line.

6. The limiter according to claim 1, characterized in that: The limiter also includes a second-stage limiting module, which includes a third diode unit and a fourth diode unit; the third diode unit is reversely connected to the fourth diode unit, and the third diode unit and the fourth diode unit each include m diodes, where m is a natural number greater than or equal to 1; when m is greater than or equal to 2, the m diodes in the third diode unit and the fourth diode unit are all connected in series in the same direction; The first end of the third diode unit is connected to the output end of the first stage limiting module, and the second end is grounded; The first end of the fourth diode unit is grounded, and the second end is connected to the output end of the first stage limiting module.

7. The limiter according to claim 1, characterized in that: The limiter further includes a second inductor connected between the output end of the first-stage limiting module and the first end of the fifth microstrip line.

8. The limiter according to claim 1, characterized in that: The limiter also includes a third-stage limiting module, and the third-stage limiting module includes a fifth diode unit and a sixth diode unit; the fifth diode unit is reversely connected to the sixth diode unit and is located on both sides of the fifth microstrip line, and the fifth diode unit and the sixth diode unit each include p diodes, where p is a natural number greater than or equal to 1; when p is greater than or equal to 2, the p diodes in the fifth diode unit and the sixth diode unit are all connected in series in the same direction; The first end of the fifth diode unit is connected to the fifth microstrip line, and the second end is grounded; The first end of the sixth diode unit is grounded, and the second end is connected to the fifth microstrip line.

9. The limiter according to claim 1, characterized in that: A first voltage is applied to one pole of any diode in the first diode unit close to the ground line, and a second voltage is applied to one pole of any diode in the second diode unit close to the ground line.

10. A chip, characterized in that: The chip at least comprises: a limiter according to any one of claims 1-8.

11. A receiver, characterized in that: The receiver at least comprises: a limiter according to any one of claims 1-8.

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