Method for preparing MEMS chip by adopting graphene material and graphene MEMS chip

Abstract

The invention relates to the technical field of micro electro mechanical system manufacturing, and particularly provides a method for preparing an MEMS chip by adopting a graphene material and a graphene MEMS chip, and the method comprises the following steps: step 1, ion implantation; 2, preparing an oxide layer; step 3, preparing a device layer; 4, preparing a sacrificial layer; step 5, patterning; 6, preparing a graphene ground electrode; 7, releasing the sacrificial layer; 8, preparing a piezoelectric film layer; step 9, preparing a graphene upper electrode; the graphene MEMS chip comprises a monocrystalline silicon substrate, an oxide layer, a device layer, a graphene ground electrode, a piezoelectric film layer and a graphene upper electrode. The MEMS chip is prepared from the graphene material, the graphene material has excellent performance in the aspects of electric conduction, heat conduction, stability, biological compatibility and the like, and compared with common materials of sensors such as gold, the graphene material has wider application prospects in the fields of micro-nano manufacturing, sensors, new energy and the like.

Description

Technical Field

[0001] The invention relates to the technical field of micro-electromechanical system manufacturing, and in particular to a method for preparing a MEMS chip by using graphene material and a graphene MEMS chip. Background Art

[0002] Micro Electro Mechanical System (MEMS) is an emerging science and technology developed on the basis of microelectronics technology that integrates micro-machines, micro-sensors, micro-actuators, signal processing, and intelligent control. Among them, MEMS inertial sensors include acceleration sensors, angular velocity sensors, IMU inertial measurement units, attitude and heading reference systems, etc. In chip manufacturing, circuits are a very important part. All chips are controlled and operated by electrical signals, and circuits transmit these signals to the inside or outside of the chip. At the same time, circuits can also transmit electricity to the inside of the chip to provide power support for the chip; inside the chip, the circuit connects components of the same or different materials through electrical signals to form a circuit network. The circuit network crisscrosses and extends in all directions, eventually forming an extremely complex electronic traffic information network for the rapid transmission of multiple signals.

[0003] With the continuous advancement of micro-nano processing technology, small-size (0.1-2um) micro-pits, micro-channels and other structures are increasingly used in bio-MEMS sensor chips. These microstructures play a vital role in gene sequencing, chemical analysis, micro-reactions and other fields, and the optimization of their performance is directly related to the working efficiency and accuracy of the entire bio-MEMS.

[0004] Currently, metal materials are mostly used in the preparation of MEMS chips on the market, especially copper materials are used to prepare electrodes. The electrodes contained in a single chip have dozens of layers of structure, just like a densely interwoven highway. The electronic traffic information network in the MEMS chip made of metal materials makes the overall size of the MEMS chip larger, affecting the performance of the MEMS chip. Summary of the invention

[0005] In view of the above-mentioned shortcomings of the prior art, an object of the present invention is to provide a method for preparing a MEMS chip using graphene material and a graphene MEMS chip, so as to solve the problem that the overall volume of the MEMS chip is larger due to the use of metal materials to prepare electrodes in the prior art.

[0006] To achieve the above object and other related objects, the present invention provides a method for preparing a MEMS chip using graphene material, the method comprising the following steps:

[0007] Step 1, ion implantation: ion implantation is performed on the single crystal silicon substrate to implant doping atoms into the single crystal silicon substrate to give the single crystal silicon conductive properties;

[0008] Step 2, preparing an oxide layer: printing an oxide layer on the upper end of the substrate;

[0009] Step 3, preparing a device layer: depositing a device layer on the upper end of the oxide layer, wherein the device layer is provided with an inertial sensing module;

[0010] Step 4, preparing a sacrificial layer: etching a sacrificial layer on the upper end of the device layer by wet etching;

[0011] Step 5, patterning: patterning the sacrificial layer to form a ground electrode target pattern on the sacrificial layer;

[0012] Step 6, preparing a graphene ground electrode: using chemical vapor deposition to deposit graphene material on the sacrificial layer with the ground electrode target pattern as a frame to form a graphene ground electrode;

[0013] Step seven, releasing the sacrificial layer;

[0014] Step eight, preparing a piezoelectric film layer: depositing a piezoelectric film layer on the upper end of the device layer, wherein the thickness of the piezoelectric film layer is greater than the thickness of the graphene ground electrode, and the piezoelectric film layer simultaneously covers the outer side and the upper end surface of the graphene ground electrode;

[0015] Step nine, preparing the graphene upper electrode: using spin coating deposition and reduction film formation to deposit graphene material on the upper end of the piezoelectric film layer to form a graphene upper electrode, the graphene upper electrode is a multi-layer structure, and a single layer is used to form an electrically interconnected signal transmission network in the MEMS chip.

[0016] In one embodiment of the present invention, in step 1, the doping atoms of the ion implantation are boron or phosphorus. Ion implantation is to implant boron or phosphorus into the silicon structure.

[0017] In one embodiment of the present invention, in step 1, after the ion implantation, the single crystal silicon substrate is rapidly heated to 1000° C. and maintained for 5 minutes to achieve heat treatment.

[0018] In one embodiment of the present invention, in step three, the inertial sensing module includes one or more functional parts of an accelerometer unit, a gyroscope unit, a pressure sensor unit, and a magnetic sensor unit.

[0019] In one embodiment of the present invention, in step five, patterning the sacrificial layer includes:

[0020] coating a layer of photoresist on the sacrificial layer;

[0021] Forming the target pattern on the photoresist by using photolithography technology;

[0022] Reactive ion etching is used to remove the portion of the sacrificial layer exposed to the target pattern window, so as to form the target pattern on the sacrificial layer;

[0023] The photoresist is removed.

[0024] In one embodiment of the present invention, the sacrificial layer is aluminum, aluminum copper, molybdenum, a titanium nitride layer, polysilicon, silicon nitride or a silicon oxide layer.

[0025] In one embodiment of the present invention, in step seven, a wet etching method is used to remove the sacrificial layer.

[0026] In one embodiment of the present invention, in step nine, reactive ion etching is used to replace the spin coating deposition and reduction film forming methods to deposit graphene material on the top of the piezoelectric film layer to form a graphene upper electrode. The graphene upper electrode is a multi-layer structure, and a single layer is used to form an electrically interconnected signal transmission network in the MEMS chip.

[0027] A graphene MEMS chip comprises a single crystal silicon substrate, an oxide layer, a device layer, a graphene ground electrode, a piezoelectric film layer, and a graphene upper electrode.

[0028] In one embodiment of the present invention, the graphene ground electrode, the piezoelectric film layer, and the graphene upper electrode cooperate to form an excitation electrode for reference vibration of the MEMS gyroscope and a detection electrode for induced vibration.

[0029] As described above, the method for preparing a MEMS chip using graphene material and the graphene MEMS chip of the present invention have the following beneficial effects:

[0030] The present invention prepares a graphene ground electrode and a graphene upper electrode. Since graphene has an extremely high carrier mobility, the signal transmission response speed of the MEMS chip is fast. The fast signal transmission response speed is crucial for application scenarios that require real-time monitoring and rapid response, such as autonomous driving, drone control, etc., and can ensure that the sensor can capture changes in acceleration, angular velocity, etc. in a timely manner, and provide accurate feedback for the system; the thermal conductivity of graphene is extremely high, far exceeding that of metals such as gold and copper, and is one of the best thermal conductors among known materials; the high thermal conductivity of graphene can quickly conduct heat from the inside of the chip to the outside, effectively reduce the chip temperature, ensure the stability and reliability of the sensor during long-term operation, increase the service life of the sensor and reduce the failure rate; compared with precious metals such as gold and copper, graphene has a significant cost advantage, thereby improving the market competitiveness of the product; when graphene is used as a conductive material, due to its extremely high conductivity and two-dimensional sheet structure, the cross-sectional area of ​​the conductor can be significantly reduced while maintaining the same conductive performance. According to research data, the cross-sectional area of ​​the conductor of graphene is reduced by about 10 compared with the cross-sectional area of ​​the conductor of copper. -3 ; This characteristic of graphene allows for a more compact layout of circuits in chip design, reducing the size and weight of the chip; in addition, a smaller cross-sectional area of ​​the conductor also means lower resistance and less energy loss, which helps to improve the overall performance and energy efficiency of the chip, which is particularly important for application scenarios that require high integration and lightweight; the present invention uses chemical vapor deposition to prepare the graphene ground electrode, which can prepare a smaller ground electrode, meet the preparation and molding requirements of the ground electrode, and is conducive to thinning the thickness of the MEMS chip; the present invention also uses spin coating deposition and reduction film formation to prepare the graphene top electrode, which can facilitate the densely interwoven signal highways of multi-layer thin film stacking, and is conducive to the rapid transmission of electrical signals; in summary, the present invention uses graphene materials to prepare MEMS chips, and graphene materials have excellent properties in conductivity, thermal conductivity, stability, biocompatibility, etc., and have a unique structure. Compared with commonly used sensor materials such as gold, it has broader application prospects in micro-nano manufacturing, sensors, new energy and other fields. BRIEF DESCRIPTION OF THE DRAWINGS

[0031] Figure 1 Shown is a workflow diagram of the method for preparing a MEMS chip using graphene material disclosed in Example 1.

[0032] Figure 2 The diagram shows the ion implantation into the substrate disclosed in step 1 of embodiment 1.

[0033] Figure 3 The diagram shows the preparation of the oxide layer disclosed in step 2 of Example 1.

[0034] Figure 4Shown is a schematic diagram of preparing the device layer disclosed in step 3 of Example 1.

[0035] Figure 5 It is a schematic diagram showing the preparation of a sacrificial layer disclosed in step 4 of Example 1.

[0036] Figure 6 Shown is a graphical schematic diagram disclosed in step five of Example 1.

[0037] Figure 7 Shown is a schematic diagram of preparing a graphene ground electrode disclosed in step six of Example 1.

[0038] Figure 8 It is a schematic diagram showing the releasing of the sacrificial layer disclosed in step seven of embodiment 1.

[0039] Fig. 9 It is a schematic diagram showing the preparation of a piezoelectric film layer disclosed in step eight of Example 1.

[0040] Fig.10 Shown is a schematic diagram of preparing a graphene upper electrode disclosed in step nine of Example 1.

[0041] Fig.11 Shown is a schematic diagram of the structure of a MEMS chip made of graphene material disclosed in Example 2.

[0042] Component number description

[0043] Substrate 1; oxide layer 2; device layer 3; graphene ground electrode 4; piezoelectric film layer 5; graphene upper electrode 6; sacrificial layer 7. DETAILED DESCRIPTION

[0044] The following is an explanation of the implementation of the present invention by means of specific embodiments. Those skilled in the art can easily understand other advantages and effects of the present invention from the contents disclosed in this specification.

[0045] See also Figures 1 to 11 . It should be noted that the structures, proportions, sizes, etc. illustrated in the drawings in this specification are only used to match the contents disclosed in the specification for people familiar with this technology to understand and read, and are not used to limit the limiting conditions for the implementation of the present invention, so they have no substantial technical significance. Any modification of the structure, change in the proportional relationship, or adjustment of the size should still fall within the scope of the technical content disclosed by the present invention without affecting the effects and purposes that can be achieved by the present invention. At the same time, the terms such as "upper", "lower", "left", "right", "middle" and "one" quoted in this specification are only for the convenience of description, and are not used to limit the scope of the implementation of the present invention. Changes or adjustments in their relative relationships should also be regarded as the scope of the implementation of the present invention without substantially changing the technical content.

[0046] Example 1, please refer to Figures 1 to 10 This embodiment provides a method for preparing a MEMS chip using graphene material, the method comprising the following steps:

[0047] Step 1, ion implantation: ion implantation is performed on the single crystal silicon substrate 1, and doping atoms are implanted into the single crystal silicon substrate 1 to give the single crystal silicon conductive properties; ion implantation is essentially a physical bombardment process, that is, charged ions with a certain energy are doped into silicon. Such high-energy ions bombard the silicon wafer and implant doping atoms into the silicon substrate; the doping atoms implanted by the ion implantation are boron or phosphorus. When boron is doped into silicon, each boron atom will lack an electron to achieve the tetravalent state of silicon, thereby forming a hole. These holes can be filled by the surrounding electrons, so that silicon exhibits the characteristics of a P-type semiconductor, because charge transport is dominated by holes, i.e., positive charges. When phosphorus is doped into silicon, each phosphorus atom will have an extra electron to achieve the tetravalent state of silicon. These extra electrons can move freely, so that silicon exhibits the characteristics of an N-type semiconductor, because charge transport is dominated by electrons, i.e., negative charges; however, the ion implantation process will inevitably cause crystal damage to the single crystal silicon substrate 1, and therefore, after the ion implantation, the substrate needs to be heat treated, that is, the single crystal silicon substrate 1 is quickly heated to 1000°C after the ion implantation and maintained for 5 minutes. This is because the silicon substrate is damaged by ion bombardment and needs to be "annealed", which is a heat treatment to restore its crystal structure in order to restore the lattice.

[0048] Step 2, prepare oxide layer 2: print an oxide layer 2 on the top of substrate 1; oxide layer 2 can be used as a mechanical support layer to maintain the shape and dimensional stability of the device and prevent mechanical stress from causing damage to the device; and although oxide layer 2 itself does not have good thermal conductivity, as part of the substrate, it helps to dissipate heat as a whole and reduce the temperature rise of the device during operation; oxide layer 2 also has good chemical stability and can remain stable during device processing and use, and is not prone to chemical reactions. The formation method of oxide layer 2 includes heating silicon in a dry pure oxygen environment to obtain dry oxide.

[0049] Step three, preparing the device layer 3: depositing a device layer 3 on the upper end of the oxide layer 2, on which an inertial sensing module is mounted, the inertial sensing module including one or more functional parts of an accelerometer unit, a gyroscope unit, a pressure sensor unit, and a magnetic sensor unit.

[0050] Step 4, preparing a sacrificial layer 7: etching a sacrificial layer 7 on the upper end of the device layer 3 by wet etching, wherein the sacrificial layer 7 is aluminum, aluminum copper, molybdenum, titanium nitride, polysilicon, silicon nitride or silicon oxide.

[0051] Step five, patterning: patterning the sacrificial layer 7 to form a ground electrode target pattern on the sacrificial layer 7; wherein the patterning of the sacrificial layer 7 includes: 1) coating a layer of photoresist on the sacrificial layer 7; 2) forming the target pattern on the photoresist using photolithography technology; 3) etching and removing the portion of the sacrificial layer 7 exposed to the target pattern window using reactive ion etching technology to form the target pattern on the sacrificial layer 7; 4) removing the photoresist.

[0052] Step 6, prepare graphene ground electrode 4: Use chemical vapor deposition to deposit graphene material on the sacrificial layer 7 with the ground electrode target pattern as the framework to form graphene ground electrode 4. The ground electrode, as the reference potential point in the circuit, can ensure that the various circuits inside the chip can work normally and avoid signal interference and voltage fluctuations. The ground electrode also plays a role in heat dissipation in the MEMS chip, helping to disperse the heat generated by the chip during operation and maintain the stable operation of the chip. The ground electrode usually has a tiny size, generally in the micron or even nanometer range, and its thickness is about 1.5 mm or even smaller. In this step, chemical vapor deposition CVD is used to prepare the graphene ground electrode 4, that is, carbon-containing gas is used in combination with high temperature for vapor deposition to prepare graphene film, which can achieve large-area high-quality film, and the film thickness is generally only a single layer or a few layers, and the film thickness is 1.5*10 -3 nm, which can produce smaller ground electrodes, meet the preparation and molding requirements of ground electrodes, and is conducive to reducing the thickness of MEMS chips.

[0053] Step seven, using a wet etching method to remove the sacrificial layer 7 to achieve the purpose of releasing the sacrificial layer 7; wet etching uses chemical reactions to remove thin film materials in the area to be etched; usually, during the wet etching process, the material will be immersed in a corrosive solution, and the corrosive solution will react chemically with the material to remove the material; removing the sacrificial layer 7 by wet etching can release the mechanical structure and avoid movement or deformation of the structure at the upper end of the sacrificial layer 7.

[0054] Step eight, preparing a piezoelectric film layer 5: depositing a piezoelectric film layer 5 on the upper end of the device layer 3, wherein the thickness of the piezoelectric film layer 5 is greater than the thickness of the graphene ground electrode 4, and the piezoelectric film layer 5 simultaneously covers the outer side and the upper end surface of the graphene ground electrode 4;

[0055] Step nine, preparing the graphene upper electrode 6: using spin coating deposition and reduction film forming method to deposit graphene material on the upper end of the piezoelectric film layer 5 to form the graphene upper electrode 6, the graphene upper electrode 6 is a multi-layer structure, and a single layer is used to form an electrically interconnected signal transmission network in the MEMS chip; the spin coating deposition and reduction film forming method is to put graphite oxide into water for ultrasonic dispersion to form a graphene oxide dispersion, spin coating and chemical treatment on the surface of the substrate, and reduce to form a film. This method facilitates the stacking of multi-layer thin films. The multi-layer structure of the graphene upper electrode 6 is superimposed on each other, like a densely interwoven signal highway, which is conducive to the rapid transmission of electrical signals.

[0056] The present invention prepares a graphene ground electrode 4 and a graphene upper electrode 6. Since graphene has an extremely high carrier mobility, the signal transmission response speed of the MEMS chip is fast. The fast signal transmission response speed is crucial for application scenarios that require real-time monitoring and rapid response, such as autonomous driving, drone control, etc., and can ensure that the sensor can capture changes in acceleration, angular velocity, etc. in a timely manner, and provide accurate feedback for the system; the thermal conductivity of graphene is extremely high, far exceeding that of metals such as gold and copper, and is one of the best thermal conductors among known materials; the high thermal conductivity of graphene can quickly conduct heat from the inside of the chip to the outside, effectively reduce the chip temperature, ensure the stability and reliability of the sensor during long-term operation, increase the service life of the sensor and reduce the failure rate; compared with precious metals such as gold and copper, graphene has a significant cost advantage, thereby improving the market competitiveness of the product; when graphene is used as a conductive material, due to its extremely high conductivity and two-dimensional sheet structure, the cross-sectional area of ​​the conductor can be significantly reduced while maintaining the same conductive performance. According to research data, the cross-sectional area of ​​the conductor of graphene is reduced by about 10 compared with the cross-sectional area of ​​the conductor of copper. -3 This characteristic of graphene allows for a more compact layout of circuits in chip design, reducing the size and weight of the chip. In addition, a smaller conductor cross-sectional area also means lower resistance and less energy loss, which helps improve the overall performance and energy efficiency of the chip, which is particularly important for applications that require high integration and lightweight.

[0057] Embodiment 2, in step nine of this embodiment, reactive ion etching is used to replace the spin coating deposition and reduction film formation methods to deposit graphene materials on the upper end of the piezoelectric film layer 5 to form a graphene upper electrode 6, and the graphene upper electrode 6 is a multi-layer structure, and a single layer is used to form an electrically interconnected signal transmission network in the MEMS chip. Reactive ion etching RIE uses oxygen plasma to etch the graphene film layer, develops core processes such as etching mask selection, deep etching of multi-layer graphene stacked film layers, and etching angle control, and promotes the application of graphene in sensors, new displays, new energy and other fields; the thickness of graphene film deposition can be realized from a single layer to a multi-layer stack of tens of microns thick, and the multi-layer structure of the graphene upper electrode 6 is superimposed layer by layer, just like a densely interwoven signal highway, which is conducive to the rapid transmission of electrical signals.

[0058] Example 3, please refer to Fig.11 , this embodiment provides a graphene MEMS chip, which is prepared by the method for preparing a MEMS chip using graphene material provided in Example 1, and includes a single crystal silicon substrate 1, an oxide layer 2, a device layer 3, a graphene ground electrode 4, a piezoelectric film layer 5, and a graphene upper electrode 6. The graphene ground electrode 4, the piezoelectric film layer 5, and the graphene upper electrode 6 use the inverse piezoelectric effect and the piezoelectric effect of the piezoelectric layer film to realize the excitation electrode of the reference vibration of the MEMS gyroscope and the detection electrode of the induced vibration, and are used to detect the induced vibration detected by the inertial sensitive module; the graphene ground electrode 4 and the graphene upper electrode 6 are both made of graphene material, and the graphene layer is compressed while ensuring signal transmission, thereby compressing the thickness of the MEMS sensor chip. A thinner MEMS sensor chip can reduce the overall thickness of the device, reduce power consumption, and achieve higher response speed and accuracy, thereby improving the performance of the MEMS sensor chip.

[0059] In summary, the present invention adopts chemical vapor deposition to prepare graphene ground electrode 4, which can prepare smaller-sized ground electrode, meet the preparation and molding requirements of ground electrode, and is conducive to thinning the thickness of MEMS chip; the present invention also adopts spin coating deposition and reduction film formation to prepare graphene upper electrode 5, which can facilitate the densely interwoven signal highway of multi-layer thin film stacking, and is conducive to the rapid transmission of electrical signals; the present invention adopts graphene material to prepare MEMS chip, and graphene material has excellent performance in electrical conductivity, thermal conductivity, stability, biocompatibility, etc., and has a unique structure. Compared with commonly used sensor materials such as gold, it has a broader application prospect in micro-nano manufacturing, sensors, new energy and other fields. Therefore, the present invention effectively overcomes the various shortcomings in the prior art and has a high industrial utilization value.

[0060] The above embodiments are merely illustrative of the principles and effects of the present invention, and are not intended to limit the present invention. Anyone familiar with the art may modify or alter the above embodiments without departing from the spirit and scope of the present invention. Therefore, all equivalent modifications or alterations made by a person of ordinary skill in the art without departing from the spirit and technical concept disclosed by the present invention shall still be covered by the claims of the present invention.

Claims

1. A method for preparing a MEMS chip using graphene material, characterized in that: The method comprises the following steps: Step 1, ion implantation: ion implantation is performed on the single crystal silicon substrate to implant doping atoms into the single crystal silicon substrate to give the single crystal silicon conductive properties; Step 2, preparing an oxide layer: printing an oxide layer on the upper end of the substrate; Step 3, preparing a device layer: depositing a device layer on the upper end of the oxide layer, wherein the device layer is provided with an inertial sensing module; Step 4, preparing a sacrificial layer: etching a sacrificial layer on the upper end of the device layer by wet etching; Step 5, patterning: patterning the sacrificial layer to form a ground electrode target pattern on the sacrificial layer; Step 6, preparing a graphene ground electrode: using chemical vapor deposition to deposit graphene material on the sacrificial layer with the ground electrode target pattern as a frame to form a graphene ground electrode; Step seven, releasing the sacrificial layer; Step eight, preparing a piezoelectric film layer: depositing a piezoelectric film layer on the upper end of the device layer, wherein the thickness of the piezoelectric film layer is greater than the thickness of the graphene ground electrode, and the piezoelectric film layer simultaneously covers the outer side and the upper end surface of the graphene ground electrode; Step nine, preparing the graphene upper electrode: using spin coating deposition and reduction film formation to deposit graphene material on the upper end of the piezoelectric film layer to form a graphene upper electrode, the graphene upper electrode is a multi-layer structure, and a single layer is used to form an electrically interconnected signal transmission network in the MEMS chip.

2. The method for preparing a MEMS chip using graphene material according to claim 1, characterized in that: In step 1, the doping atoms implanted by ions are boron or phosphorus.

3. The method for preparing a MEMS chip using graphene material according to claim 2, characterized in that: In step one, after the ion implantation, the single crystal silicon substrate is rapidly heated to 1000° C. and maintained for 5 minutes to achieve heat treatment.

4. The method for preparing a MEMS chip using graphene material according to claim 1, characterized in that: In step three, the inertial sensing module includes one or more functional parts of an accelerometer unit, a gyroscope unit, a pressure sensor unit, and a magnetic sensor unit.

5. The method for preparing a MEMS chip using graphene material according to claim 1, characterized in that: In step five, patterning the sacrificial layer includes: coating a layer of photoresist on the sacrificial layer; Forming the target pattern on the photoresist by using photolithography technology; Reactive ion etching is used to remove the portion of the sacrificial layer exposed to the target pattern window, so as to form the target pattern on the sacrificial layer; The photoresist is removed.

6. The method for preparing a MEMS chip using graphene material according to claim 5, characterized in that: The sacrificial layer is aluminum, aluminum copper, molybdenum, titanium nitride layer, polysilicon, silicon nitride or silicon oxide layer.

7. The method for preparing a MEMS chip using graphene material according to claim 1, characterized in that: In step seven, the sacrificial layer is removed by wet etching.

8. The method for preparing a MEMS chip using graphene material according to claim 1, characterized in that: In step nine, reactive ion etching is used to replace the spin coating deposition and reduction film formation methods to deposit graphene material on the top of the piezoelectric film layer to form a graphene upper electrode. The graphene upper electrode is a multi-layer structure, and a single layer is used to form an electrically interconnected signal transmission network in the MEMS chip.

9. A graphene MEMS chip, characterized in that: The graphene MEMS chip comprises a single crystal silicon substrate, an oxide layer, a device layer, a graphene ground electrode, a piezoelectric film layer, and a graphene upper electrode.

10. The graphene MEMS chip according to claim 9, characterized in that: The graphene ground electrode, the piezoelectric film layer and the graphene upper electrode cooperate to form an excitation electrode for reference vibration of the MEMS gyroscope and a detection electrode for induction vibration.

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