Temperature control device for semiconductor, temperature control system for semiconductor and control method thereof

Abstract

The invention provides temperature control equipment for a semiconductor, a temperature control system for the semiconductor and a control method of the temperature control system. The temperature control equipment for the semiconductor comprises a refrigerant circulating system and a secondary refrigerant circulating system. The refrigerant circulating system comprises a compressor, a refrigerant channel of the first heat exchanger, a first throttling component and a refrigerant channel of the second heat exchanger which are connected in sequence; the secondary refrigerant circulating system comprises a first circulating pump, a heating part and a secondary refrigerant channel of the second heat exchanger; the secondary refrigerant circulating system further comprises a first pipeline, a second pipeline, a third pipeline, a fourth pipeline, a second circulating pump and a liquid storage tank. The first pipeline and the second pipeline are arranged in parallel and are both connected to the outlet end of the secondary refrigerant channel, the outlet end of the first pipeline is provided with a first temperature control inlet connecting part, and the outlet end of the second pipeline is provided with a second temperature control inlet connecting part; the secondary refrigerant channel communicates with the liquid storage tank through a third pipeline, and the two ends of the third pipeline are connected with the inlet end of the secondary refrigerant channel and the outlet of the liquid storage tank correspondingly. The first circulating pump and the second circulating pump are respectively arranged on two of the first pipeline, the second pipeline and the third pipeline; the heating component is arranged on the second pipeline; the outlet end of the fourth pipeline is communicated with the inlet of the liquid storage tank, and the inlet end of the fourth pipeline is provided with a temperature control outlet connecting part. The temperature control equipment for the semiconductor can provide temperature control for the upper electrode and the lower electrode at the same time, and meanwhile the overall power consumption and the equipment size of the equipment are reduced.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor manufacturing, and in particular to a semiconductor temperature control device, a semiconductor temperature control system and a control method thereof. Background Art

[0002] In the process of semiconductor wafer processing, temperature control is extremely important to the processing yield of the wafer. The more advanced the process, the higher the temperature accuracy required in the processing. At present, the mainstream semiconductor temperature control equipment in the industry generally uses compressor refrigeration system and cooling water heat exchange to achieve temperature control according to the different temperature control ranges.

[0003] The etching process is one of the most important processes in semiconductor processing. Currently, advanced etching processes all use plasma dry etching. This process method requires cooling the upper electrode component while controlling the temperature of the lower electrode. That is, for a single processing chamber, the temperature control equipment includes two independently set temperature control systems to control the temperature of the upper electrode and the lower electrode respectively. The temperature control equipment is large in size and high in cost.

[0004] In addition, in order to improve the efficiency of wafer processing, mainstream etching equipment adopts a dual processing chamber design, that is, one processing unit can process wafers in two chambers at the same time, and its equipped temperature control equipment also needs to control the temperature of the four electrode components in the two chambers at the same time. Generally, temperature control equipment uses two sets of independent temperature control equipment, which makes the overall power consumption of the temperature control equipment greater, the volume is larger, and the cost is higher. In addition, the existing temperature control system mainly controls the temperature by adjusting the heater, which has the problems of high power consumption and slow adjustment speed. Summary of the invention

[0005] The first object of the present invention is to provide a semiconductor temperature control device that can provide temperature control for both the upper electrode and the lower electrode while reducing the overall power consumption of the device and the size of the device.

[0006] A second object of the present invention is to provide a semiconductor temperature control system having the above-mentioned semiconductor temperature control device.

[0007] A third object of the present invention is to provide a control method for the above-mentioned semiconductor temperature control system.

[0008] To achieve the above-mentioned first purpose, the present invention provides a temperature control device for semiconductors, including a refrigerant circulation system and a secondary coolant circulation system; the refrigerant circulation system includes a compressor, a refrigerant channel of a first heat exchanger, a first throttling component, and a refrigerant channel of a second heat exchanger connected in sequence; the secondary coolant circulation system includes a first circulation pump, a heating component, and a secondary coolant channel of a second heat exchanger; the secondary coolant circulation system also includes a first pipeline, a second pipeline, a third pipeline, a fourth pipeline, a second circulation pump, and a liquid storage tank; the first pipeline and the second pipeline are arranged in parallel and are both connected to the secondary coolant channel The outlet end of the first pipeline is provided with a first temperature control inlet connection part, and the outlet end of the second pipeline is provided with a second temperature control inlet connection part; the coolant channel is connected to the liquid storage tank through a third pipeline, and the two ends of the third pipeline are respectively connected to the inlet end of the coolant channel and the outlet of the liquid storage tank; the first circulation pump and the second circulation pump are respectively arranged on two of the three pipelines of the first pipeline, the second pipeline and the third pipeline; the heating component is arranged on the second pipeline; the outlet end of the fourth pipeline is connected to the inlet of the liquid storage tank, and the inlet end of the fourth pipeline is provided with a temperature control outlet connection part.

[0009] It can be seen from the above scheme that by setting the first pipeline and the second pipeline in parallel, a low-temperature coolant flows in the first pipeline to enter the etching machine to cool the upper electrode, and a high-temperature coolant flows in the second pipeline to enter the etching machine to accurately control the temperature of the lower electrode. In this way, a set of devices can realize the control of the temperature of the two routes at the same time, without the need to set up additional cooling settings to cool the upper electrode, thereby reducing the number of components, reducing costs, and reducing the size of the entire device. The liquid storage tank is arranged at the outlet end of the etching machine, which is used to fully mix the low-temperature coolant with the high-temperature coolant to avoid affecting the detection of the coolant temperature at the coolant channel of the second heat exchanger due to uneven mixing, thereby affecting the control of components such as the compressor or the throttle valve. The heating component can instantly heat the coolant flowing through the pipeline where the heating component is located, so as to timely control the temperature of the coolant entering the cooling channel of the lower electrode of the etching machine.

[0010] In addition, the present invention can achieve precise temperature control through the coordinated regulation of the refrigeration system and the heating component. During the temperature control process, by adjusting the refrigeration system, it is also beneficial to reduce the power consumption of temperature control, while increasing the rate of change of the cooling capacity of the temperature control system, and better adapting to the rapid changes in external loads. The temperature control system also detects the temperatures of multiple parts during regulation, which is beneficial to maintaining the stability of the processing technology and improving the accuracy of temperature control.

[0011] A preferred solution is that temperature sensors are provided on the first pipeline, the second pipeline and the third pipeline.

[0012] It can be seen that the temperature sensor on the first pipeline is used to detect the temperature of the coolant entering the upper electrode cooling channel of the etcher, the temperature sensor on the second pipeline is used to detect the temperature of the coolant entering the lower electrode cooling channel, and the temperature sensor on the third pipeline is used to detect the temperature of the coolant entering the coolant channel of the second heat exchanger. By detecting the above temperatures, the system can be controlled more accurately, thereby achieving precise control of the temperature of the coolant entering the upper electrode cooling channel and the lower electrode cooling channel of the etcher.

[0013] A preferred solution is that the refrigerant circulation system also includes a branch pipeline and a second throttling component, the two ends of the branch pipeline are respectively connected to the exhaust port of the compressor and the inlet side of the refrigerant channel of the second heat exchanger, and the second throttling component is arranged on the branch pipeline.

[0014] It can be seen that by setting up the branch pipeline, the flow rate of high-temperature and high-pressure refrigerant vapor entering the second heat exchanger can be controlled, thereby achieving the adjustment of the evaporation temperature.

[0015] A preferred solution is that the semiconductor temperature control device further includes a cooling water circulation system, and the cooling water circulation system includes a cooling water channel of the first heat exchanger.

[0016] It can be seen that by providing a cooling water circulation system, the first heat exchanger can be cooled, thereby improving the heat exchange effect of the first heat exchanger.

[0017] A preferred solution is that the fourth pipeline includes a first outlet pipe and a second outlet pipe arranged in parallel, the temperature control outlet connection part includes a first outlet connection part and a second outlet connection part, the first outlet connection part is arranged on the first outlet pipe, and the second outlet connection part is arranged on the second outlet pipe.

[0018] A preferred solution is that the first circulating pump is arranged on the third pipeline and is used to control the flow rate of the refrigerant flowing to the refrigerant channel of the second heat exchanger; the second circulating pump is arranged on the second pipeline and is used to control the flow rate of the refrigerant flowing to the second temperature control inlet connection part, and in the direction of the refrigerant flow, the heating component is located on the downstream side of the second circulating pump.

[0019] It can be seen that the second circulating pump can control the flow rate of the coolant flowing to the lower electrode cooling channel, and the first circulating pump and the second circulating pump work together to control the flow rate of the coolant flowing to the upper electrode cooling channel, thereby more accurately controlling the flow rate and temperature of the coolant.

[0020] A preferred solution is that at least one of the first heat exchanger and the second heat exchanger is a plate heat exchanger.

[0021] It can be seen that the plate heat exchanger can improve the heat exchange efficiency of the two media flowing through the corresponding plate heat exchanger.

[0022] To achieve the above-mentioned second purpose, the present invention provides a temperature control system for semiconductors, including an etching machine and the above-mentioned temperature control device for semiconductors; a first electrode cooling channel and a second electrode cooling channel are arranged in the etching machine, a first temperature control inlet connection part is connected to the first electrode cooling channel, and a second temperature control inlet connection part is connected to the second electrode cooling channel; the first electrode cooling channel and the second electrode cooling channel are both connected to the temperature control outlet connection part.

[0023] To achieve the third purpose mentioned above, the present invention provides a control method for a temperature control system for semiconductors, which is applied to the above-mentioned temperature control system for semiconductors, and the control method includes: obtaining a first refrigerant temperature on the inlet side of the refrigerant channel of the second heat exchanger; if the first refrigerant temperature is greater than or equal to a preset refrigerant upper limit temperature value, the compressor operates according to the compressor operating frequency upper limit value; if the first refrigerant temperature is less than or equal to the preset refrigerant lower limit temperature value, the compressor operates according to the compressor operating frequency lower limit value.

[0024] It can be seen that if the first refrigerant temperature is greater than or equal to the preset refrigerant upper limit temperature value, it means that the temperature of the refrigerant entering the refrigerant channel of the second heat exchanger is relatively high. At this time, the compressor needs to be operated at the upper limit of the operating frequency to reduce the temperature of the refrigerant entering the refrigerant channel of the second heat exchanger as quickly as possible. If the first refrigerant temperature is less than or equal to the preset refrigerant lower limit temperature value, it means that the temperature of the refrigerant entering the refrigerant channel of the second heat exchanger is relatively low. At this time, the compressor can be operated at the lower limit of the operating frequency to increase the temperature of the refrigerant entering the refrigerant channel of the second heat exchanger and achieve energy saving effect.

[0025] A preferred solution is that the control method also includes: obtaining a second refrigerant temperature on the inlet side of the first electrode cooling channel and a third refrigerant temperature on the inlet side of the second electrode cooling channel; controlling the operating frequency of the compressor according to the temperature difference between the second refrigerant temperature and the first preset refrigerant temperature; and controlling the temperature of the heating component according to the temperature difference between the third refrigerant temperature and the second preset refrigerant temperature.

[0026] It can be seen that the operating frequency of the compressor can be controlled by the temperature difference between the second coolant temperature and the first preset coolant temperature, so as to realize timely control of the coolant temperature entering the upper electrode cooling channel, and at the same time, the temperature of the heating component can be controlled by the temperature difference between the third coolant temperature and the second preset coolant temperature, so as to realize timely control of the coolant temperature of the lower electrode cooling channel. Through the combined action of the compressor and the heating component, the control of the coolant temperature entering the upper electrode cooling channel and the lower electrode cooling channel is realized, with low power consumption and fast adjustment speed. BRIEF DESCRIPTION OF THE DRAWINGS

[0027] Figure 1It is a system block diagram of an embodiment of a semiconductor temperature control system of the present invention.

[0028] The present invention is further described below in conjunction with the accompanying drawings and embodiments. DETAILED DESCRIPTION

[0029] Various exemplary embodiments of the present invention will now be described in detail with reference to the accompanying drawings. The description of the exemplary embodiments is merely illustrative and is in no way intended to limit the present invention and its application or use. The present invention can be implemented in many different forms and is not limited to the embodiments described herein. These embodiments are provided to make the present invention thorough and complete and to fully express the scope of the present invention to those skilled in the art. It should be noted that unless otherwise specifically stated, the relative arrangement of the parts and steps, the composition of the materials, the numerical expressions and the numerical values ​​set forth in these embodiments should be interpreted as being merely exemplary, rather than as limitations.

[0030] The words "first", "second" and similar words used in the present invention do not indicate any order, quantity or importance, but are only used to distinguish different parts. The words "include" or "comprise" and similar words mean that the elements before the word include the elements listed after the word, and do not exclude the possibility of including other elements. "Up", "down", "left", "right" and the like are only used to indicate relative positional relationships. When the absolute position of the described object changes, the relative positional relationship may also change accordingly.

[0031] In the present invention, when a specific device is described as being located between a first device and a second device, there may or may not be an intermediate device between the specific device and the first device or the second device. When a specific device is described as being connected to other devices, the specific device may be directly connected to the other devices without an intermediate device, or may not be directly connected to the other devices but have an intermediate device.

[0032] All terms (including technical terms or scientific terms) used in the present invention have the same meanings as those understood by ordinary technicians in the field, unless otherwise specifically defined. It should also be understood that terms defined in general dictionaries should be interpreted as having meanings consistent with their meanings in the context of the relevant technology, and should not be interpreted in an idealized or extremely formal sense, unless explicitly defined herein.

[0033] Technologies, methods, and equipment known to ordinary technicians in the relevant art may not be discussed in detail, but where appropriate, the technologies, methods, and equipment should be considered as part of the specification.

[0034] See also Figure 1The semiconductor temperature control system of this embodiment includes an etching machine 1 and a semiconductor temperature control device 2. The etching machine 1 is provided with an upper electrode, a lower electrode, a first electrode cooling channel and a second electrode cooling channel. The first electrode cooling channel is provided at the upper electrode for cooling the upper electrode, and the second electrode cooling channel is provided at the lower electrode for accurately controlling the temperature of the lower electrode.

[0035] The semiconductor temperature control device 2 includes a cooling water circulation system 3 , a refrigerant circulation system 4 , and a brine circulation system 5 .

[0036] The cooling water circulation system 3 includes a cooling water channel 61 of the first heat exchanger 6 . By providing the cooling water circulation system 3 , the first heat exchanger 6 can be cooled, thereby improving the heat exchange effect of the first heat exchanger 6 .

[0037] The refrigerant circulation system 4 includes a compressor 41, a refrigerant channel 62 of a first heat exchanger 6, a first throttling component 42, and a refrigerant channel 71 of a second heat exchanger 7, which are connected in sequence. The refrigerant circulation system 4 also includes a branch line 43, a second throttling component 44, a first pressure sensor 45, and a second pressure sensor 46. The two ends of the branch line 43 are respectively connected to the exhaust port 411 of the compressor 41 and the inlet side of the refrigerant channel 71 of the second heat exchanger 7. The second throttling component 44 is arranged on the branch line 43. Through the arrangement of the branch line 43, the flow rate of high-temperature and high-pressure refrigerant vapor entering the second heat exchanger 7 can be controlled, thereby realizing the adjustment of the evaporation temperature. The first heat exchanger 6 and the second heat exchanger 7 are both plate heat exchangers, the first heat exchanger 6 is a condenser, and the second heat exchanger 7 is an evaporator. The first throttling component 42 and the second throttling component 44 are both electronic expansion valves. The first pressure sensor 45 is arranged at the inlet side of the refrigerant channel 62 of the first heat exchanger 6 to detect the condensation pressure Pc, and the second pressure sensor 46 is arranged at the outlet side of the refrigerant channel 71 of the second heat exchanger 7 to detect the evaporation pressure Pe. The control method of the opening degree of the electronic expansion valve as the first throttling component 42 is: according to the compressor operation frequency, the corresponding target condensation pressure Pc1 in the program is called, and according to the difference Ep between Pc and Pc1, the algorithm of the PID program is called to calculate and obtain the opening value of the electronic expansion valve.

[0038] The brine circulation system 5 includes a first circulation pump 51 , a heating component 53 , a brine channel 72 of the second heat exchanger 7 , a first pipeline 54 , a second pipeline 55 , a third pipeline 56 , a fourth pipeline 57 , a second circulation pump 52 and a liquid storage tank 58 .

[0039] The first pipeline 54 and the second pipeline 55 are arranged in parallel and are both connected to the outlet end of the coolant channel 72 of the second heat exchanger 7. The outlet end of the first pipeline 54 is provided with a first temperature control inlet connection portion 541, and the first temperature control inlet connection portion 541 is used to connect with the inlet end 11 of the first electrode cooling channel of the etcher 1. The outlet end of the second pipeline 55 is provided with a second temperature control inlet connection portion 551, and the second temperature control inlet connection portion 551 is used to connect with the inlet end 13 of the second electrode cooling channel of the etcher 1.

[0040] The coolant channel 72 is connected to the liquid storage tank 58 through the third pipeline 56 , and two ends of the third pipeline 56 are respectively connected to the inlet end of the coolant channel 72 and the outlet of the liquid storage tank 58 .

[0041] The outlet end of the fourth pipeline 57 is connected to the inlet of the liquid storage tank 58, and the inlet end of the fourth pipeline 57 is provided with a temperature control outlet connection part 570. Specifically, the fourth pipeline 57 includes a first outlet pipe 571 and a second outlet pipe 572 arranged in parallel, and the temperature control outlet connection part 570 includes a first outlet connection part 573 and a second outlet connection part 574, the first outlet connection part 573 is arranged on the first outlet pipe 571, and the second outlet connection part 574 is arranged on the second outlet pipe 572. The first outlet connection part 573 is used to connect to the outlet end 12 of the first electrode cooling channel of the etcher 1, and the second outlet connection part 574 is used to connect to the outlet end 14 of the second electrode cooling channel of the etcher 1.

[0042] The first circulation pump 51 is arranged on the third pipeline 56, the heating component 53 and the second circulation pump 52 are both arranged on the second pipeline 55, and in the direction of the flow of the coolant, the heating component 53 is located at the downstream side of the second circulation pump 52, the first circulation pump 51 can control the flow rate Q of the coolant flowing to the coolant channel 72 of the second heat exchanger 7, the second circulation pump 52 can control the flow rate Q2 of the coolant flowing to the second electrode cooling channel, and at the same time, the first circulation pump 51 and the second circulation pump 52 can jointly control the flow rate Q1 of the coolant flowing to the first electrode cooling channel, that is, the flow rate of the coolant flowing to the first electrode cooling channel is the difference between the flow rates Q and Q2. In this embodiment, the first circulation pump 51 includes a pump body 511 and a flow meter 512, the flow meter 512 is arranged at the inlet end of the pump body 511, and the flow rate of the third pipeline 56 is controlled by the flow meter 512. The second circulation pump 52 includes a pump body 521 and a flow meter 522 . The flow meter 522 is disposed at the outlet end of the pump body 521 . The flow rate of the second pipeline 55 is controlled by the flow meter 522 .

[0043] Temperature sensors are provided on the first pipeline 54, the second pipeline 55 and the third pipeline 56. The temperature sensor 591 on the first pipeline 54 is used to detect the temperature of the coolant entering the upper electrode cooling channel of the etcher 1, the temperature sensor 592 on the second pipeline 55 is used to detect the temperature of the coolant entering the lower electrode cooling channel, and the temperature sensor 593 on the third pipeline 56 is used to detect the temperature of the coolant entering the coolant channel 72 of the second heat exchanger 7. By detecting the above temperatures, the system can be controlled more accurately, thereby achieving precise control of the temperature of the coolant entering the upper electrode cooling channel and the lower electrode cooling channel of the etcher 1.

[0044] The above-mentioned semiconductor temperature control system can provide two types of coolants at different temperatures for the etcher to control the processing temperature. The coolant first passes through the coolant channel 72 of the second heat exchanger 7 to reduce the temperature to a lower temperature. A part of it passes through the first pipeline 54 to provide the low-temperature coolant with a temperature of T1 to the first electrode cooling channel of the etcher to cool the upper electrode. The other part passes through the second circulation pump 52, passes through the heating component 53, and is heated to temperature T2, and enters the first electrode cooling channel of the etcher from the inlet 2 to control the temperature of the lower electrode.

[0045] The control method of the semiconductor temperature control system comprises the following steps:

[0046] The first brine temperature at the inlet side of the brine passage 72 of the second heat exchanger 7 is acquired.

[0047] If the first refrigerant temperature is greater than or equal to the preset refrigerant upper limit temperature value, it means that the temperature of the refrigerant entering the refrigerant channel 72 of the second heat exchanger 7 is relatively high, then the compressor 41 operates according to the upper limit value of the compressor 41 operating frequency to reduce the temperature of the refrigerant entering the refrigerant channel 71 of the second heat exchanger 7 as quickly as possible.

[0048] If the first refrigerant temperature is less than or equal to the preset refrigerant lower limit temperature value, it means that the temperature of the refrigerant entering the refrigerant channel 72 of the second heat exchanger 7 is low, and the compressor 41 operates according to the lower limit value of the operating frequency of the compressor 41 to increase the temperature of the refrigerant entering the refrigerant channel 71 of the second heat exchanger 7, while achieving energy saving effect. At the same time, the second throttling component 44 is opened, and according to the temperature difference between the second refrigerant temperature and the first preset refrigerant temperature, the algorithm of the PID program is called to calculate the opening value of the second throttling component 44 to control the flow of high-temperature and high-pressure refrigerant vapor entering the second heat exchanger 7, thereby realizing the regulation of the evaporation temperature.

[0049] The control method of the semiconductor temperature control system also includes:

[0050] The second coolant temperature at the inlet side of the first electrode cooling channel and the third coolant temperature at the inlet side of the second electrode cooling channel are acquired.

[0051] According to the temperature difference between the second coolant temperature and the first preset coolant temperature, the algorithm of the PID program is called to calculate the operating frequency of the compressor 41, and the compressor 41 is controlled to operate at the operating frequency, so as to realize timely control of the coolant temperature entering the upper electrode cooling channel.

[0052] According to the temperature difference between the third coolant temperature and the second preset coolant temperature, the algorithm of the PID program is called to control the temperature of the heating component 53, thereby achieving timely control of the coolant temperature of the lower electrode cooling channel.

[0053] As can be seen from the above, by setting the first pipeline and the second pipeline in parallel, a low-temperature coolant flows in the first pipeline to enter the etching machine to cool the upper electrode, and a high-temperature coolant flows in the second pipeline to enter the etching machine to accurately control the temperature of the lower electrode, so as to solve the problem that the process temperature changes sharply in the existing temperature control scheme, resulting in reduced temperature control accuracy. In this way, there is no need to set up an additional cooling setting to cool the upper electrode, thereby reducing the number of components, reducing costs, and reducing the size of the entire equipment. The liquid storage tank is arranged at the outlet end of the etching machine, which is used to fully mix the low-temperature coolant with the high-temperature coolant to avoid affecting the detection of the coolant temperature at the coolant channel of the second heat exchanger due to uneven mixing, thereby affecting the control of components such as the compressor or the throttle valve. The heating component can instantly heat the coolant flowing through the pipeline where the heating component is located, so as to timely control the temperature of the coolant entering the cooling channel of the lower electrode of the etching machine. The present invention can achieve precise temperature control through the coordinated regulation of the refrigeration system and the heating component. During the temperature control process, by adjusting the refrigeration system, it is also beneficial to reduce the power consumption of the temperature control, while increasing the rate of change of the refrigeration capacity of the temperature control system, and better adapting to the rapid changes in the external load. The temperature control system also detects the temperatures of multiple parts during regulation, which is beneficial to maintaining the stability of the processing technology and improving the accuracy of temperature control.

[0054] In addition, the first circulation pump and the second circulation pump can be respectively arranged on two of the three pipelines of the first pipeline, the second pipeline and the third pipeline. For example, the first circulation pump can also be arranged on the third pipeline, and the second circulation pump can be arranged on the first pipeline; or the first circulation pump can be arranged on the first pipeline, and the second circulation pump can be arranged on the second pipeline. Only one of the first heat exchanger and the second heat exchanger can also be a plate heat exchanger. The first circulation pump and the second circulation pump can also adjust the flow rate by variable frequency speed regulation. For example, by installing a frequency converter on the motor of the circulation pump, the speed of the motor can be adjusted, thereby adjusting the flow rate of the pump. The fourth pipeline can also be only one pipeline, and the temperature control outlet connection part of the fourth pipeline is provided with a three-way joint, and the first electrode cooling channel and the second electrode cooling channel are connected to the fourth pipeline through the three-way joint. The above changes can also achieve the purpose of the present invention.

[0055] Finally, it should be emphasized that the above are only preferred embodiments of the present invention and are not intended to limit the present invention. For those skilled in the art, the present invention may have various changes and modifications. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the present invention should be included in the scope of protection of the present invention.

Claims

1. Temperature control equipment for semiconductors, including refrigerant circulation systems and coolant circulation systems; The refrigerant circulation system comprises a compressor, a refrigerant passage of a first heat exchanger, a first throttling component and a refrigerant passage of a second heat exchanger connected in sequence; The refrigerant circulation system comprises a first circulation pump, a heating component and a refrigerant channel of a second heat exchanger; Features: The coolant circulation system further includes a first pipeline, a second pipeline, a third pipeline, a fourth pipeline, a second circulation pump and a liquid storage tank; The first pipeline and the second pipeline are arranged in parallel and are both connected to the outlet end of the coolant channel, the outlet end of the first pipeline is provided with a first temperature control inlet connection part, and the outlet end of the second pipeline is provided with a second temperature control inlet connection part; The coolant channel is connected to the liquid storage tank through the third pipeline, and the two ends of the third pipeline are respectively connected to the inlet end of the coolant channel and the outlet of the liquid storage tank; The first circulation pump and the second circulation pump are respectively arranged on two of the three pipelines of the first pipeline, the second pipeline and the third pipeline; The heating component is arranged on the second pipeline; The outlet end of the fourth pipeline is communicated with the inlet of the liquid storage tank, and the inlet end of the fourth pipeline is provided with a temperature control outlet connection part.

2. The semiconductor temperature control device according to claim 1, characterized in that: The first pipeline, the second pipeline and the third pipeline are each provided with a temperature sensor.

3. The semiconductor temperature control device according to claim 1, characterized in that: The refrigerant circulation system further includes a branch pipeline and a second throttling component. Both ends of the branch pipeline are respectively connected to the exhaust port of the compressor and the inlet side of the refrigerant channel of the second heat exchanger. The second throttling component is arranged on the branch pipeline.

4. The semiconductor temperature control device according to any one of claims 1 to 3, characterized in that: The semiconductor temperature control device further includes a cooling water circulation system, and the cooling water circulation system includes a cooling water channel of the first heat exchanger.

5. The semiconductor temperature control device according to any one of claims 1 to 3, characterized in that: The fourth pipeline includes a first outlet pipe and a second outlet pipe arranged in parallel, the temperature control outlet connection part includes a first outlet connection part and a second outlet connection part, the first outlet connection part is arranged on the first outlet pipe, and the second outlet connection part is arranged on the second outlet pipe.

6. The semiconductor temperature control device according to any one of claims 1 to 3, characterized in that: The first circulation pump is arranged on the third pipeline and is used to control the flow rate of the brine flowing to the brine channel of the second heat exchanger; The second circulation pump is arranged on the second pipeline and is used to control the flow rate of the coolant flowing to the second temperature control inlet connection part. In the direction of the coolant flow, the heating component is located on the downstream side of the second circulation pump.

7. The semiconductor temperature control device according to any one of claims 1 to 3, characterized in that: At least one of the first heat exchanger and the second heat exchanger is a plate heat exchanger.

8. A temperature control system for semiconductors, characterized in that: comprising an etching machine and a temperature control device for a semiconductor as claimed in any one of claims 1 to 7; The etching machine is provided with a first electrode cooling channel and a second electrode cooling channel, the first temperature control inlet connection portion is connected to the first electrode cooling channel, and the second temperature control inlet connection portion is connected to the second electrode cooling channel; The first electrode cooling channel and the second electrode cooling channel are both connected to the temperature control outlet connection portion.

9. A method for controlling a temperature control system for a semiconductor, characterized in that: Applied to the semiconductor temperature control system as claimed in claim 8, the control method comprises: Acquire a second coolant temperature at an inlet side of the first electrode cooling channel and a third coolant temperature at an inlet side of the second electrode cooling channel; controlling the operating frequency of the compressor according to the temperature difference between the second coolant temperature and the first preset coolant temperature; The temperature of the heating component is controlled according to a temperature difference between the third brine temperature and a second preset brine temperature.

10. The control method of semiconductor temperature control equipment according to claim 9, characterized in that: The control method further comprises: Acquiring a first coolant temperature at an inlet side of a coolant channel of the second heat exchanger; If the first refrigerant temperature is greater than or equal to the preset refrigerant upper temperature limit, the compressor operates according to the compressor operating frequency upper limit; If the first refrigerant temperature is less than or equal to the preset refrigerant lower limit temperature value, the compressor operates according to the compressor operating frequency lower limit value.

Images