Sensing device

Abstract

A sensing device is provided. The sensing device comprises a substrate, a sensing electrode and a semiconductor sensing layer. The sensing electrode is arranged on the substrate and comprises a metal electrode layer and a self-assembly layer. The metal electrode layer is arranged on the substrate. The self-assembly layer is arranged on the metal electrode layer. The semiconductor sensing layer is disposed on the sensing electrode. Wherein the energy difference between the sensing electrode and the semiconductor sensing layer is less than or equal to 2eV.

Description

Technical Field

[0001] The present invention relates to a sensing device, and in particular to a sensing device comprising a self-assembled layer. Background Art

[0002] In order to realize the sensing function, the sensing device usually includes various films, layers or components. However, it is difficult for the carriers of the sensing device to pass through the interface between adjacent films, layers or components, resulting in the problem of excessive resistance. What's worse, the excessive resistance at the interface may affect the sensing performance of the sensing device, making the sensing device unable to distinguish the signal. Therefore, the sensing device is limited by the problem of interface mismatch.

[0003] Therefore, although existing sensing devices have gradually met their intended uses, they still do not fully meet the requirements in all aspects. Therefore, there are still some problems to be overcome with respect to sensing devices. Summary of the invention

[0004] In view of the above problems, some embodiments of the present invention include a self-assembled layer, and the self-assembled layer is used to modify the sensing electrode to reduce the energy difference between the sensing electrode and the semiconductor sensing layer. Therefore, the present invention adjusts the work function at the surface of the sensing electrode by setting a self-assembled layer, thereby improving the matching degree between the sensing electrode and the semiconductor sensing layer. Therefore, the present invention can improve the reliability of the sensing device, improve the gas resolution, improve the structural strength and / or reduce the overall thickness of the sensing device.

[0005] According to some embodiments, a sensing device is provided. The sensing device includes a substrate, a sensing electrode and a semiconductor sensing layer. The sensing electrode is disposed on the substrate and includes a metal electrode layer and a self-assembly layer. The metal electrode layer is disposed on the substrate. The self-assembly layer is disposed on the metal electrode layer. The semiconductor sensing layer is disposed on the sensing electrode. The energy difference between the sensing electrode and the semiconductor sensing layer is less than or equal to 2 eV.

[0006] The sensing device of the present invention can be applied to various types of sensing equipment. In order to make the components and advantages of the present invention more clearly understood, various embodiments are given below and described in detail with the accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0007] When read together with the drawings, the invention can be more fully understood from the following detailed description. It is worth noting that, in accordance with standard practice in the industry, the components are not drawn to scale. In fact, the size of each component can be arbitrarily enlarged or reduced for clarity.

[0008] Figure 1A and Figure 1B 3D schematic diagrams and cross-sectional schematic diagrams respectively illustrate various stages of manufacturing a sensing device according to some embodiments of the present invention.

[0009] Figure 2A and Figure 2B 3D schematic diagrams and cross-sectional schematic diagrams respectively illustrate various stages of manufacturing a sensing device according to some embodiments of the present invention.

[0010] Figure 2C is a three-dimensional schematic diagram of manufacturing a self-assembly layer according to some embodiments of the present invention.

[0011] Figure 3A and Figure 3B 3D schematic diagrams and cross-sectional schematic diagrams respectively illustrate various stages of manufacturing a sensing device according to some embodiments of the present invention.

[0012] Figure 4 2 is a schematic cross-sectional view of a sensing device according to some other embodiments of the present invention.

[0013] Figure 5 FIG. 4 is a schematic diagram of energy levels of a sensing device without a self-assembly layer according to some embodiments of the present invention.

[0014] Fig. 6A and Figure 6B 1 and 2 are schematic cross-sectional views and schematic energy level views of a sensing device including a self-assembled layer according to some embodiments of the present invention.

[0015] Fig. 7A and Figure 7B 1 and 2 are schematic cross-sectional views and schematic energy level views of a sensing device including a self-assembled layer according to some embodiments of the present invention.

[0016] Figure Number:

[0017] 1,2:Sensing device

[0018] 10:Substrate

[0019] 20:Metal electrode layer

[0020] 20a: first electrode layer

[0021] 20b: Second electrode layer

[0022] 21a: first interdigital part

[0023] 21b: Second interdigital part

[0024] 30: Self-assembled layer

[0025] 30': Self-assembly materials

[0026] 30M: Self-assembling molecules

[0027] 30t:Thickness

[0028] 32: Atomization device

[0029] 40: Semiconductor sensing layer

[0030] A-A': Section

[0031] e - :electronic

[0032] G: Gas

[0033] n + : Hole

[0034] P1: First Path

[0035] P2: Second Path

[0036] SE: Sensing Electrode

[0037] T1,T2: Type DETAILED DESCRIPTION

[0038] The following is a detailed description of the sensing device of each embodiment of the present invention. It should be understood that the following description provides many different embodiments for implementing different aspects of some embodiments of the present invention. The specific elements and arrangements described below are only for simple and clear description of some embodiments of the present invention. Of course, these are only used as examples and are not intended to limit the present invention. In addition, similar and / or corresponding element symbols may be used in different embodiments to indicate similar and / or corresponding elements to clearly describe the present invention. However, the use of these similar and / or corresponding element symbols is only for the simple and clear description of some embodiments of the present invention, and does not represent any correlation between the different embodiments and / or structures discussed.

[0039] It should be understood that relative terms may be used in various embodiments, such as "lower" or "bottom" or "upper" or "top" to describe the relative relationship of one element of the diagram to another element. It is understood that if the device of the diagram is turned upside down, the element described on the "lower" side will become the element on the "upper" side. The embodiments of the present invention can be understood in conjunction with the drawings, and the drawings of the present invention are also considered as part of the invention description.

[0040] Furthermore, when a first material layer is said to be located on or over a second material layer, it may include a situation where the first material layer is in direct contact with the second material layer, or the first material layer and the second material layer may not be in direct contact, that is, there may be one or more other material layers between the first material layer and the second material layer. However, if the first material layer is directly located on the second material layer, it means that the first material layer and the second material layer are in direct contact.

[0041] In addition, it should be understood that the ordinal numbers used in the specification and claims, such as "first", "second", etc., to modify the elements, are not intended to imply any previous ordinal numbers of the (or those) elements, nor do they represent the order of one element and another element, or the order of the manufacturing method. The use of these ordinal numbers is only used to make a component with a certain name clearly distinguishable from another component with the same name. The claims and the specification may not use the same words, for example, the first element in the specification may be the second element in the claims.

[0042] In the text, the terms "approximate", "about", and "substantially" usually mean within 10%, or within 5%, or within 3%, or within 2%, or within 1%, or within 0.5% of a given value or range. The quantity given here is an approximate quantity, that is, in the absence of specific instructions for "about", "approximately", or "substantially", the meaning of "about", "approximately", or "substantially" can still be implied. The term "range is between a first value and a second value" means that the range includes the first value, the second value, and other values ​​between them. The term "A to B" means that the range includes A, B, and other values ​​between them. Furthermore, any two values ​​or directions used for comparison may have a certain error. If the first value is equal to the second value, it implies that there may be an error of about 10%, or within 5%, or within 3%, or within 2%, or within 1%, or within 0.5% between the first value and the second value.

[0043] Certain words are used throughout the specification and claims of the present invention to refer to specific elements. It should be understood by those skilled in the art that manufacturers may refer to the same element by different names. It is not intended to distinguish between elements that have the same function but different names. In the following specification and claims, words such as "comprise", "contain", "have" are open words, so they should be interpreted as "including but not limited to...". Therefore, when the terms "comprise", "contain" and / or "have" are used in the description of the present invention, they specify the existence of corresponding parts, regions, steps, operations and / or elements, but do not exclude the existence of one or more corresponding parts, regions, steps, operations and / or elements.

[0044] It should be understood that the following embodiments may replace, reorganize, or combine components in different embodiments to complete other embodiments without departing from the spirit of the present invention. Components between embodiments may be used in any combination as long as they do not violate the spirit of the invention or conflict with each other.

[0045] Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meanings as those commonly understood by those skilled in the art. It is understood that these terms, such as those defined in commonly used dictionaries, should be interpreted as having a meaning consistent with the background or context of the relevant technology and the present invention, and should not be interpreted in an idealized or overly formal manner unless specifically defined in the embodiments of the present invention.

[0046] Reference Figure 1A and Figure 1B , which are respectively a three-dimensional schematic diagram and a cross-sectional schematic diagram of various stages of manufacturing a sensing device 1 according to some embodiments of the present invention. Figure 1B Display along the Figure 1A Schematic diagram of the cross section captured by the line segment AA' shown in FIG. In some embodiments, a substrate 10 may be provided. In some embodiments, the substrate 10 may include glass fiber, epoxy resin, aluminum nitride (AlN), silicon carbide (SiC), a printed circuit board (PCB), a combination thereof, or other suitable substrates, but the present invention is not limited thereto.

[0047] In some embodiments, the metal electrode layer 20 may be formed on the substrate 10. In some embodiments, the metal electrode layer 20 may include a conductive material. The conductive material may be a metal such as aluminum (Al), silver (Ag), gold (Au), copper (Cu), a metal alloy, a conductive metal oxide, the like, other suitable materials, or a combination thereof, but the present invention is not limited thereto.

[0048] In some embodiments, aluminum can have a work function of approximately -4.2 eV; silver can have a work function of approximately -4.64 eV; gold can have a work function of approximately -5.1 eV; and copper can have a work function of approximately -4.6 eV.

[0049] In some embodiments, the metal electrode layer 20 may be formed on the substrate 10 by a deposition process. The deposition process may be a chemical vapor deposition (CVD) process or other suitable processes. The CVD process may be a low pressure chemical vapor deposition (LPCVD), a low temperature chemical vapor deposition (LTCVD), a rapid thermal chemical vapor deposition (RTCVD), a plasma enhanced chemical vapor deposition (PECVD), an atomic layer deposition (ALD) or other suitable CVD processes, but the present invention is not limited thereto.

[0050] like Figure 1A As shown, the metal electrode layer 20 may include a first electrode layer 20a and a second electrode layer 20b separated from each other. In some embodiments, the first electrode layer 20a and the second electrode layer 20b may be disposed on the substrate 10. In some embodiments, the first electrode layer 20a and the second electrode layer 20b may be interdigitated electrodes disposed corresponding to each other, but the present invention is not limited thereto.

[0051] In some embodiments, the first electrode layer 20a may include a plurality of first interdigitated portions 21a, the second electrode layer 20b may include a plurality of second interdigitated portions 21b, and each of the plurality of second interdigitated portions 21b is arranged in an interlaced manner with each of the plurality of first interdigitated portions 21a. In other embodiments, the first electrode layer 20a and the second electrode layer 20b may have any suitable shape, such as a straight line, an L shape, a spiral shape, a zigzag shape, or an irregular shape with a curve. In some embodiments, the first electrode layer 20a and the second electrode layer 20b may be electrically connected to a semiconductor sensing layer formed subsequently, so that one of the first electrode layer 20a and the second electrode layer 20b serves as a positive electrode, and the other of the first electrode layer 20a and the second electrode layer 20b serves as a negative electrode.

[0052] In some embodiments, further processes may be performed on the substrate 10 or the metal electrode layer 20 to facilitate the subsequent formation of a self-assembled layer on the substrate 10 or the metal electrode layer 20. In some embodiments, a plasma process may be performed on the substrate 10 or the metal electrode layer 20 to modify the surface charge of the substrate 10 or the metal electrode layer 20, thereby facilitating the formation of a self-assembled layer on the substrate 10 or the metal electrode layer 20. Therefore, the substrate 10 may be a plasma-treated substrate and / or the metal electrode layer 20 may be a plasma-treated metal electrode layer. For example, after providing the substrate 10, the substrate 10 is plasma-treated with, for example, hydrogen plasma. For example, after forming the metal electrode layer 20 on the substrate 10, the substrate 10 and the metal electrode layer 20 are plasma-treated together with, for example, hydrogen plasma.

[0053] Hereinafter, the same or similar elements are represented by the same or similar reference numerals, and repeated description is omitted.

[0054] Figure 2A and Figure 2B They are respectively a three-dimensional schematic diagram and a cross-sectional schematic diagram of various stages of manufacturing a sensing device 1 according to some embodiments of the present invention. Figure 2B Display along the Figure 2A 10. In some embodiments, a self-assembled layer 30 may be formed on the metal electrode layer 20 to obtain a sensing electrode SE disposed on the substrate 10. In some embodiments, the self-assembled layer 30 may be disposed on the top surface and the side surface of the metal electrode layer 20, so that the self-assembled layer 30 may be used to modify the sensing electrode SE. For example, the self-assembled layer 30 may be used to modify the surface of the sensing electrode SE that is not in contact with the substrate 100. Therefore, the self-assembled layer 30 can reduce the energy difference between the sensing electrode SE and the semiconductor sensing layer formed subsequently.

[0055] In some embodiments, the self-assembled layer 30 may be composed of self-assembling molecules (e.g., Fig. 6AThe self-assembly molecule 30M shown is formed by a self-assembly process. In some embodiments, the self-assembly molecule may include molecules that can be arranged in an orderly manner. For example, the self-assembly molecule may have two ends with different charges. That is, one end of the self-assembly molecule is a positive end, and the other end of the self-assembly molecule is a negative end. Accordingly, the self-assembly process can be performed by adjusting the surface charge of the desired location of the self-assembly molecule, but the orderly arrangement method described in the present invention is not limited thereto. In some embodiments, the self-assembly layer 30 may include hydrophilic self-assembly molecules. In some embodiments, the self-assembly layer 30 may include a polymer. In some embodiments, the self-assembly layer 30 may have a thickness 30t less than or equal to 5nm. For example, the self-assembly layer 30 may have 5nm, 4nm, 3nm, 2nm, 1nm or any value between the aforementioned values ​​or a range of values ​​composed of any values, but the present invention is not limited thereto. Accordingly, compared to setting a layer not formed by a self-assembly process between the metal electrode layer 20 and the subsequently formed semiconductor sensing layer, the self-assembly layer 30 may have a lower thickness to reduce the overall thickness of the sensing device. Furthermore, since the self-assembled layer 30 may include polymers, the conductivity of the self-assembled layer 30 may be adjusted so that the self-assembled layer 30 can effectively transfer the carriers in the metal electrode layer 20 to the subsequently formed semiconductor sensing layers, and avoid the problem of carriers repeatedly jumping between the self-assembled layer 30 and the metal electrode layer 20 and failing to be transferred to the semiconductor sensing layer.

[0056] Figure 2C3 is a schematic diagram of manufacturing a self-assembly layer 30 according to some embodiments of the present invention. In some embodiments, by introducing gas G into an atomizer 32, the self-assembly material 30' is atomized and sprayed on the metal electrode layer 20, and the self-assembly material 30' and the metal electrode layer 20 are left to stand, so that the self-assembly molecules in the self-assembly material 30' are self-assembled on the metal electrode layer 20 to form the self-assembly layer 30. In some embodiments, the atomizer 32 may be an aerosol jet printer. In some embodiments, the self-assembly material 30' may be formed on a plurality of first interdigitated portions 21a and a plurality of second interdigitated portions 21b of the metal electrode layer 20, and the self-assembly material 30' may not be formed on the remaining portion of the metal electrode layer 20. Accordingly, the setting position of the self-assembly layer 30 can be accurately adjusted and the process cost can be reduced. In some embodiments, the self-assembly material 30' may be formed on all surfaces of the metal electrode layer 20. In some embodiments, the self-assembly material 30' may be further formed on the substrate 10. In other embodiments, the substrate 10 on which the metal electrode layer 20 is disposed is immersed in the self-assembly material 30', and then the substrate 10 and the metal electrode layer 20 are taken out and left to stand, so as to form the self-assembly layer 30 on the substrate 10 and the metal electrode layer 20. Accordingly, it is possible to facilitate batch formation of the self-assembly layer 30. In other embodiments, the self-assembly layer 30 can be formed on the metal electrode layer 20 by three-dimensional (3D) printing. Accordingly, the location of the self-assembly layer 30 can be accurately adjusted and the process cost can be reduced.

[0057] Figure 3A and Figure 3B They are respectively a three-dimensional schematic diagram and a cross-sectional schematic diagram of various stages of manufacturing a sensing device 1 according to some embodiments of the present invention. Figure 3B Display along the Figure 3A In some embodiments, a semiconductor sensing layer 40 is formed on the sensing electrode SE to obtain the sensing device 1. In some embodiments, as Figure 3B As shown, the semiconductor sensing layer 40 may be disposed on the top surface of the substrate 10 and on the side surface and the top surface of the self-assembly layer 30, but the present invention is not limited thereto. In some embodiments, the semiconductor sensing layer 40 may directly contact the top surface of the substrate 10. In some embodiments, the self-assembly layer 30 may expose a portion of the substrate 10, and the semiconductor sensing layer 40 may cover the portion of the substrate 10 exposed by the self-assembly layer 30. In some embodiments, the semiconductor sensing layer 40 may be formed by a deposition process.

[0058] In some embodiments, the semiconductor sensing layer 40 may include a semiconductor based sensing material for sensing the gas to be measured. In some embodiments, because the sensing electrode SE and the semiconductor sensing layer 40 are electrically connected to each other to form a conductive path, the type, concentration or combination of the gas to be measured can be obtained by measuring the resistance difference before and after the gas to be measured is introduced into the sensing device 1. For example, the gas to be measured may include a reducing gas, such as carbon monoxide (CO), nitrogen dioxide (NO2), hydrogen sulfide (H2S), methane (CH4), sulfur monoxide (SO) or the like.

[0059] In some embodiments, the semiconductor sensing layer 40 may include molybdenum oxide (MoO3), zinc oxide (ZnO), tin oxide (SnO2), titanium oxide (TiO2), tungsten oxide (WO3), other suitable sensing materials or combinations thereof, but the present invention is not limited thereto. In some embodiments, molybdenum oxide may have a work function in the range of about -1.8 eV to -5.3 eV; zinc oxide may have a work function in the range of about -4.1 eV to -7.7 eV; tin oxide may have a work function in the range of about -4.5 eV to -8.0 eV; titanium oxide may have a work function in the range of about -4.0 eV to -7.2 eV; and tungsten oxide may have a work function in the range of about -4.15 eV to -7.3 eV.

[0060] In some embodiments, Figure 3B As shown, the first path P1 shows the transfer path of carriers in the sensing device 1. The carriers will pass through the semiconductor sensing layer 40, the self-assembly layer 30 and the metal electrode layer 20 in sequence along the normal direction of the substrate 10, and are introduced into the substrate 10. In some embodiments, depending on the types of the metal electrode layer 20 and the semiconductor sensing layer 40, the carriers can be electrons or holes.

[0061] Figure 4 is a cross-sectional schematic diagram of a sensing device 2 according to some other embodiments of the present invention. Figure 4 As shown, the self-assembly layer 30 physically separates the substrate 10 and the semiconductor sensing layer 40 from each other. In some embodiments, the self-assembly layer 30 is conformably formed on the substrate 10 and the metal electrode layer 20, and the semiconductor sensing layer 40 is conformably formed on the self-assembly layer 30. In some embodiments, Figure 4 The first path P1 shown in the sensing device 2 is Figure 3B The first path P1 shown in the sensing device 1 is the same as that shown in the sensing device 1, so it will not be described in detail. Figure 4In the sensing device 2, even if the self-assembly layer 30 is conformably disposed on the substrate 10 and the metal electrode layer 20, carriers will not be transferred along the second path P2, so conformably disposing the self-assembly layer 30 will not affect the carrier transfer path.

[0062] In detail, since the self-assembly layer 30 is used to modify the work function of the metal surface in the sensing electrode SE and reduce the work function difference between the semiconductor sensing material and the sensing electrode SE, it is easy to inject carriers. In the case where the intrinsic resistance of the self-assembly layer 30 is large, it is not easy for the carriers to be transferred from the semiconductor sensing layer 40 to the self-assembly layer 30 and then injected into the substrate 10, and it is not easy to be transferred from the semiconductor sensing layer 40 to the self-assembly layer 30 and then injected into the metal electrode layer 20 laterally. Therefore, the setting position of the self-assembly layer 30 can be flexibly set to improve the reliability of the sensing device 1 and / or 2 and the margin of the manufacturing process.

[0063] In the following, the energy and work function relationship among the metal electrode layer 20 , the self-assembly layer 30 and the semiconductor sensing layer 40 is further described.

[0064] Figure 5 is an energy level diagram of a sensing device without a self-assembly layer 30 according to some embodiments of the present invention. Figure 5 Displays the highest occupied molecular orbital (HOMO), the lowest unoccupied molecular orbital (LUMO), and the Fermi level (FE). F and vacuum level E VAC .like Figure 5 As shown, in some embodiments, when the self-assembly layer 30 is not provided, there is a problem of excessive energy difference or mismatch of work function between the metal electrode layer 20 and the semiconductor sensing layer 40 due to the difference in material nature. Accordingly, the resistance drift of the sensing device may be caused, and problems such as surge, interference, and false signal may be generated during the sensing period.

[0065] Fig. 6A and Figure 6B 1 and 2 are schematic cross-sectional views and schematic energy level views of a sensing device including a self-assembled layer 30 of the first type T1 according to some embodiments of the present invention. Fig. 6AAs shown, in some embodiments, the self-assembled layer 30 is formed by densely arranging self-assembled molecules 30M. In this embodiment, one end of the self-assembled molecule 30M adjacent to the semiconductor sensing layer 40 has a negative charge, and one end of the self-assembled molecule 30M away from the semiconductor sensing layer 40 has a positive charge. In this embodiment, one end of the self-assembled molecule 30M adjacent to the metal electrode layer 20 has a positive charge, and the other end of the self-assembled layer 30M away from the metal electrode layer 20 has a negative charge. Furthermore, the metal electrode layer 20 can be subjected to plasma treatment so that the surface of the metal electrode layer 20 can have a negative charge to further attract the self-assembled molecules 30M, thereby enhancing the structural strength of the self-assembled layer 30 formed on the metal electrode layer 20.

[0066] like Figure 6B As shown, in some embodiments, the energy difference ΔE between the sensing electrode SE and the semiconductor sensing layer 40 may be less than or equal to 2 eV, so as to facilitate the hole n in the metal electrode layer 20 in the sensing electrode SE. + Migrate to the semiconductor sensing layer 40. For the sensing device, the energy difference between the sensing electrode SE and the semiconductor sensing layer 40 is related to the inverse of the response of the sensing device. When the energy difference ΔE between the sensing electrode SE and the semiconductor sensing layer 40 is smaller, or the work function between the sensing electrode SE and the semiconductor sensing layer 40 changes The smaller it is, the greater the responsiveness of the sensing device. Therefore, the energy difference ΔE can be less than or equal to 2eV to improve the responsiveness of the sensing device. For example, the energy difference ΔE can be 2eV, 1.8eV, 1.6eV, 1.4eV, 1.2eV, 1eV, 0.9eV, 0.8eV, 0.7eV, 0.6eV, 0.5eV, 0.4eV, 0.3eV, 0.2eV, 0.1eV or any value between the aforementioned values ​​or a numerical range composed of any values, but the present invention is not limited to this. Accordingly, when the responsiveness of the sensing device is greater, the resistance drift of the sensing device can be avoided, thereby avoiding the generation of surges, interference, false signals and other problems during the sensing period. Since the sensing device can avoid the problems of surges, interference or false signals, the gas resolution of the sensing device will not be adversely affected, thereby improving the gas resolution of the sensing device.

[0067] like Figure 6B As shown, in some embodiments, when the carriers of the sensing device are holes n + When the Fermi level E of the metal electrode layer 20 F The energy difference ΔE may be higher than the HOMO energy of the semiconductor sensing layer 40 , and the energy difference ΔE may be equal to the Fermi level E of the metal electrode layer 20 . F = The difference between the energy of the HOMO of the semiconductor sensing layer 40 and the Fermi level E of the metal electrode layer 20. FThe energy difference ΔE may be lower than the HOMO energy of the semiconductor sensing layer 40 , and the energy difference ΔE may be equal to the Fermi level E of the metal electrode layer 20 . F The difference between the energy of the HOMO of the semiconductor sensing layer 40 and the energy of the HOMO of the semiconductor sensing layer 40. In other embodiments, the work function of the self-assembled layer 30 may be between the work function of the metal electrode layer 20 and the work function of the semiconductor sensing layer 40. For example, the work function of the self-assembled layer 30 may be greater than the work function of the metal electrode layer 20, and the work function of the self-assembled layer 30 may be less than the work function of the semiconductor sensing layer 40.

[0068] In some embodiments, when the carriers of the sensing device are holes n + , it is beneficial for the sensing device to sense reducing gases. For example, a semiconductor sensing layer 40 including a metal oxide can be used to sense reducing gases. In some embodiments, the metal electrode layer 20 may include a metal, and the semiconductor sensing layer 40 may include a metal oxide. Wherein, when the metal oxide is disposed on the self-assembled layer 30, oxygen atoms tend to be exposed to the outside, while metal atoms tend to be close to the self-assembled layer 30. In other words, compared with oxygen atoms, metal atoms are closer to the self-assembled layer 30. For example, the metal electrode layer 20 may be gold (Au), the semiconductor sensing layer 40 may be tungsten oxide (WO3), and the tungsten atoms in tungsten oxide (WO3) are closer to the self-assembled layer 30. Therefore, in order to make the metal atoms and the self-assembled layer 30 closer, one end of the self-assembled layer 30 close to the metal oxide having a positive charge has a negative charge, and one end of the self-assembled layer 30 away from the metal oxide has a positive charge. Accordingly, the arrangement between the self-assembled layer 30 and the semiconductor sensing layer 40 can be made close, thereby reducing defects and improving conductivity.

[0069] Fig. 7A and Figure 7B 1 and 2 are schematic cross-sectional views and schematic energy level views of a sensing device including a self-assembled layer 30 of the second type T2 according to some embodiments of the present invention. Fig. 7A As shown, one end of the self-assembly molecule 30M adjacent to the metal electrode layer 20 has a negative charge, and the other end of the self-assembly layer 30 away from the metal electrode layer 20 has a positive charge. Furthermore, the metal electrode layer 20 may be subjected to plasma treatment so that the surface of the metal electrode layer 20 may have a positive charge to further attract the self-assembly molecule 30M, thereby enhancing the structural strength of the self-assembly layer 30 formed on the metal electrode layer 20.

[0070] like Figure 7B As shown, in some embodiments, the energy difference ΔE between the sensing electrode SE and the semiconductor sensing layer 40 may be less than or equal to 2 eV, so as to facilitate the electrons e in the metal electrode layer 20 in the sensing electrode SE. -Migrate to the semiconductor sensing layer 40. For example, the energy difference ΔE may be 2eV, 1.8eV, 1.6eV, 1.4eV, 1.2eV, 1eV, 0.9eV, 0.8eV, 0.7eV, 0.6eV, 0.5eV, 0.4eV, 0.3eV, 0.2eV, 0.1eV or any value therebetween or a range of values ​​consisting of any values, but the present invention is not limited thereto. Figure 7B As shown, in some embodiments, when the carriers of the sensing device are electrons, the energy difference ΔE may be the Fermi level E of the metal electrode layer 20. F to the energy difference of the LUMO of the semiconductor sensing layer 40.

[0071] Next, the following example is provided.

[0072] In Example 1, the metal electrode layer 20 may be silver (Ag). The self-assembled layer 30 may include fluorinated alkanethiol and carboxyl-terminated alkanethiol. For example, the fluorinated alkanethiol may be 3,3,4,4,5,5,6,6,7,7,8,8,9,9,10,10,10-heptadecafluoro-1-decanethiol. analogue, (3,3,4,4,5,5,6,6,7,7,8,8,9,9,10,10,10-heptadecafluoro-1-decanethiol, FDT) (molecular weight 480.2 / mole). For example, the terminal carboxyl chain alkanethiol may be n-decanethiol (n-decanethiol, HDT) (molecular weight 174.4g / mole). Thus, after forming the self-assembled layer 30 on the metal electrode layer 20, the work function at the surface of the sensing electrode SE including silver may be adjusted to be within a range of about -4.1eV to -5.8eV, or the work function at the surface of the sensing electrode SE including silver may be adjusted to be within a range of about -4.3eV to -5.3eV. Therefore, molybdenum oxide, zinc oxide, tin oxide, titanium oxide and / or tungsten oxide may be selected as the semiconductor sensing layer 40 accordingly, and the energy difference ΔE between the sensing electrode SE and the semiconductor sensing layer 40 may be less than or equal to 2eV.

[0073] In Example 2, the metal electrode layer 20 may be gold (Au). The self-assembled layer 30 may include decanethiol (DT), partially fluorinated decanethiol (PFDT), or a combination thereof. Thus, after forming the self-assembled layer 30 on the metal electrode layer 20, the work function at the surface of the sensing electrode SE including gold may be adjusted to be within a range of approximately -4.9 eV to -6.1 eV. Therefore, molybdenum oxide, zinc oxide, tin oxide, titanium oxide, and / or tungsten oxide may be selected as the semiconductor sensing layer 40 accordingly, and the energy difference ΔE between the sensing electrode SE and the semiconductor sensing layer 40 may be less than or equal to 2 eV.

[0074] In Example 3, the metal electrode layer 20 may be gold (Au). The self-assembled layer 30 may include a fluorine-substituted alkanethiolate-SAM (F-SAM) and an alkanethiolate-SAM (H-SAM). Thus, after forming the self-assembled layer 30 on the metal electrode layer 20, the work function at the surface of the sensing electrode SE including gold may be adjusted to be within a range of approximately -4.3 eV to -5.7 eV. Therefore, molybdenum oxide, zinc oxide, tin oxide, titanium oxide and / or tungsten oxide may be selected as the semiconductor sensing layer 40 accordingly, and the energy difference ΔE between the sensing electrode SE and the semiconductor sensing layer 40 may be less than or equal to 2 eV.

[0075] In summary, according to some embodiments of the present invention, the present invention modifies the sensing electrode by setting a self-assembled layer on the metal electrode layer. For example, the energy difference between the sensing electrode and the semiconductor sensing layer is less than or equal to 2eV. Thereby, the matching degree between the sensing electrode and the semiconductor sensing layer is improved. According to some embodiments of the present invention, the self-assembled layer can help carrier transfer, avoid surges, interference and false signals caused by resistance drift, so as to improve the reliability and / or gas resolution of the sensing device. According to some embodiments of the present invention, the self-assembled layer may include densely arranged hydrophilic polymers, so as to improve the structural strength of the sensing device and / or reduce the overall thickness of the sensing device.

[0076] The scope of protection of the present invention is not limited to the processes, machines, manufactures, material compositions, devices, methods and steps in the specific embodiments described in the specification. Any person skilled in the art can understand from the disclosure of the present invention that the processes, machines, manufactures, material compositions, devices, methods and steps currently or developed in the future can be used according to the present invention as long as they can implement substantially the same functions or obtain substantially the same results in the embodiments described herein. Therefore, the scope of protection of the present invention includes the aforementioned processes, machines, manufactures, material compositions, devices, methods and steps. Any embodiment or claim of the present invention is not required to achieve all the purposes, advantages and / or features invented by the present invention.

[0077] Several embodiments are summarized above so that those skilled in the art can better understand the concepts of the embodiments of the present invention. Those skilled in the art should understand that they can design or modify other processes and structures based on the embodiments of the present invention to achieve the same purposes and / or advantages as the embodiments introduced herein. Those skilled in the art should also understand that such equivalent processes and structures do not deviate from the spirit and scope of the present invention, and they can make various changes, substitutions and replacements without violating the spirit and scope of the present invention.

Claims

1. A sensing device, characterized in that: include: a substrate; A sensing electrode is disposed on the substrate and comprises: a metal electrode layer disposed on the substrate; and a self-assembled layer disposed on the metal electrode layer; and a semiconductor sensing layer, disposed on the sensing electrode; Wherein, an energy difference between the sensing electrode and the semiconductor sensing layer is less than or equal to 2 eV.

2. The sensing device according to claim 1, characterized in that The energy difference is the difference between the Fermi level of the metal electrode layer and the energy of the highest occupied molecular orbital of the semiconductor sensing layer, or the energy difference is the difference between the Fermi level of the metal electrode layer and the energy of the lowest unoccupied molecular orbital of the semiconductor sensing layer.

3. The sensing device according to claim 1, characterized in that The work function of the self-assembly layer is between the work function of the metal electrode layer and the work function of the semiconductor sensing layer.

4. The sensing device according to claim 1, wherein: The semiconductor sensing layer directly contacts the top surface of the substrate.

5. The sensing device according to claim 1, wherein: The self-assembly layer separates the substrate and the semiconductor sensing layer.

6. The sensing device according to claim 1, wherein: The metal electrode layer includes one of aluminum, silver, gold, and copper, or any combination thereof.

7. The sensing device according to claim 1, characterized in that: The semiconductor sensing layer includes one of molybdenum oxide, zinc oxide, tin oxide, titanium oxide, and tungsten oxide, or any combination thereof.

8. The sensing device according to claim 1, wherein: The self-assembled layer is a hydrophilic self-assembled layer.

9. The sensing device according to claim 1, wherein: The metal electrode layer is a metal electrode layer treated by plasma.

10. The sensing device according to claim 1, wherein: The metal electrode layer comprises: a first electrode layer disposed on the substrate and comprising a plurality of first interdigitated portions; and A second electrode layer is disposed on the substrate and includes a plurality of second interdigitated portions, and each of the plurality of second interdigitated portions is arranged alternately with each of the plurality of first interdigitated portions.

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