Light-emitting module and display device

Abstract

The embodiment of the invention provides a light-emitting module and a display device. The light-emitting module comprises a substrate, and a transflective film layer, a color modulation layer, a light modulation layer and a light-emitting device which are sequentially arranged on the second side of the substrate, at least one part of first light generated by the light-emitting device penetrates through the light modulation layer to enter the color modulation layer, and the color modulation layer is configured to modulate the received first light into second light; one part of the second light penetrates through the transflective film layer and is emitted towards the first side direction of the substrate, and one part of the second light is reflected by the transflective film layer and then enters the light modulation layer; and the light modulation layer is configured to modulate the received third light at the preset angle and then enable the third light to be emitted from the periphery of the transflective film layer to the first side direction of the substrate. According to the technical scheme, the light emitting uniformity of the sub light emitting areas of the light emitting module is improved, and the overall light emitting uniformity of the light emitting module is improved.

Description

Technical Field

[0001] The present disclosure relates to the field of display technology, and in particular to a light-emitting module and a display device. Background Art

[0002] Liquid crystal display devices (LCDs) use passive light-emitting display, that is, liquid crystal display devices need to use backlight sources to achieve light-emitting display. Backlight sources include direct backlight sources and edge-entry backlight sources. The light-emitting devices on the backlight sources are used to achieve uniform light emission across the entire surface through a light guide plate or a diffuser. In order to meet the requirements of high color gamut and thin and lightweight devices, quantum dot (QD) backlight can be used, that is, a layer of quantum dot protective film is added to the ordinary backlight to improve the color gamut. The use of QD backlight can increase the color gamut from 70% NTSC to more than 110% NTSC, but the thickness of the quantum dot protective film is generally more than 30μm, which increases the thickness of the backlight.

[0003] When the backlight source adopts miniaturized inorganic light-emitting diodes (MiniLED), it can not only achieve a wide color gamut, but also reduce the thickness of the backlight source to achieve ultra-thin products. However, while Mini LED achieves ultra-thin backlight sources, it has problems such as low light source utilization and poor light uniformity. Summary of the invention

[0004] The embodiments of the present disclosure provide a light-emitting module and a display device to solve or alleviate one or more technical problems in the prior art.

[0005] As a first aspect of an embodiment of the present disclosure, an embodiment of the present disclosure provides a light-emitting module, including:

[0006] a substrate having a first side and a second side disposed opposite to each other;

[0007] a transflective film layer, located on the second side of the substrate, the transflective film layer allowing a portion of the received light to pass through and reflecting a portion of the received light;

[0008] A color modulation layer is located on a side of the transflective film layer away from the substrate, and an orthographic projection of the color modulation layer on the substrate is located within an orthographic projection of the transflective film layer on the substrate;

[0009] a light modulation layer, located on a side of the color modulation layer facing away from the substrate;

[0010] A light emitting device is located on a side of the light modulation layer away from the substrate, and the light emitting device corresponds to the color modulation layer;

[0011] At least a portion of the first light generated by the light-emitting device passes through the light modulation layer and enters the color modulation layer. The color modulation layer is configured to modulate the received first light into a second light. A portion of the second light passes through the transflective film layer and is emitted toward the first side of the substrate. A portion of the second light is reflected by the transflective film layer and enters the light modulation layer. The light modulation layer is configured to modulate the received third light of a preset angle so that the third light is emitted from the periphery of the transflective film layer toward the first side of the substrate.

[0012] In some embodiments, the light modulation layer includes a light extraction structure and a waveguide structure layer, the light extraction structure is located on the second side of the substrate, the orthographic projection of the light extraction structure on the substrate is located at the periphery of the orthographic projection of the transflective film layer on the substrate, and the waveguide structure layer is located on the side of the light extraction structure away from the substrate;

[0013] A portion of the second light is reflected by the reflective film layer and enters the waveguide structure layer. The waveguide structure layer is configured to transmit the received third light to the light extraction structure. The light extraction structure is configured to extract the third light. The third light is emitted toward the first side of the substrate.

[0014] In some embodiments, the waveguide structure layer includes a first dielectric layer, a waveguide layer, and a second dielectric layer that are stacked. The first dielectric layer is closer to the substrate than the second dielectric layer. The refractive index of the first dielectric layer is smaller than that of the waveguide layer. The refractive index of the second dielectric layer is smaller than that of the waveguide layer.

[0015] In some embodiments, the refractive index of the first dielectric layer ranges from 1.4 to 1.6, the refractive index of the second dielectric layer ranges from 1.4 to 1.6, and the refractive index of the waveguide layer ranges from 1.6 to 1.8.

[0016] In some embodiments,

[0017] The material of the first dielectric layer includes silicon nitride, and the thickness of the first dielectric layer is 100 nm to 200 nm; and / or,

[0018] The material of the waveguide layer includes silicon oxide, and the thickness of the waveguide layer is 200nm to 500nm; and / or,

[0019] The material of the second dielectric layer includes silicon nitride, and the thickness of the second dielectric layer is 50nm-100nm.

[0020] In some embodiments, the light extraction structure includes a grating structure;

[0021] The second light is a blue light, the period of the grating structure is 160nm-200nm, and the width of the grating structure is 70nm-90nm; and / or,

[0022] The second light is green light, the period of the grating structure is 180nm-220nm, and the width of the grating structure is 90nm-110nm; and / or,

[0023] The second light is a red light, the period of the grating structure is 280nm-320nm, and the width of the grating structure is 80nm-100nm.

[0024] In some embodiments, the light-emitting module includes multiple sub-light-emitting areas, the sub-light-emitting areas include light-emitting devices, and the light modulation layer also includes a blocking wall structure. The orthographic projection of the blocking wall structure on the substrate is located outside the orthographic projection of the light-collecting structure on the substrate. The blocking wall structure is inserted in the waveguide structure layer along a direction perpendicular to the substrate to block the third light from transmitting toward the adjacent sub-light-emitting area.

[0025] In some embodiments, a groove is formed on the second side of the substrate, the transflective film layer is located on the surface of the groove, and the color modulation layer is located in the groove.

[0026] In some embodiments, the cross-section of the groove gradually increases from the bottom toward the top of the groove.

[0027] In some embodiments, the depth of the groove is 10 μm to 20 μm.

[0028] In some embodiments, the transflective film layer includes a first metal layer and a second metal layer that are stacked, the first metal layer is closer to the substrate than the second metal layer, the material of the first metal layer includes magnesium, the thickness of the first metal layer is 20nm to 50nm, the material of the second metal layer includes silver, the thickness of the second metal layer is 100nm to 150nm.

[0029] In some embodiments, the first light is a third color light, the color modulation layer includes a color conversion layer, and the color conversion layer is configured to convert the incident third color light into a second light, the color of the second light is different from the color of the first light; and / or,

[0030] The first light is a third color light, the color modulation layer includes a light-transmitting material layer, the first light is a second light after passing through the light-transmitting material layer, and the color of the second light is the same as the color of the first light.

[0031] In some embodiments, the material of the color conversion layer includes quantum dot material, organic fluorescent material or fluorescent powder.

[0032] In some embodiments, the first light is a blue light, and the second light is a red light or a green light.

[0033] In some embodiments, a shading layer is also included, which is located on the side of the light modulation layer away from the substrate, the light-emitting device is located on the side of the shading layer away from the substrate, and the orthographic projection of the shading layer on the substrate is located between the orthographic projections of adjacent color modulation layers on the substrate.

[0034] As a second aspect of the embodiments of the present disclosure, the embodiments of the present disclosure provide a display device, including the light-emitting module in the embodiments of the present disclosure.

[0035] As a third aspect of the embodiments of the present disclosure, the embodiments of the present disclosure provide a display device, including the light-emitting module in the embodiments of the present disclosure, and also including a liquid crystal display panel, which is located on a side of the substrate in the light-emitting module close to the first side.

[0036] The technical solution of the embodiment of the present disclosure can reduce the number of second light rays directly emitted from the light-emitting side of the color modulation layer, and reflect a part of the second light rays to the light modulation layer through the transflective film layer. After the light modulation layer modulates the third light rays, the third light rays are emitted from the periphery of the transflective film layer (i.e., the periphery of the color modulation layer) toward the first side of the substrate. Therefore, the light-emitting module of the embodiment of the present disclosure reduces the number of light rays directly emitted from the light-emitting side of the color modulation layer, and increases the number of light rays emitted from the periphery of the color modulation layer. For a sub-light-emitting area corresponding to a light-emitting device, the number of light rays in the first area of ​​the sub-light-emitting area is reduced, and the number of light rays in the second area of ​​the sub-light-emitting area is increased. Thus, the light-emitting brightness of the first area of ​​the sub-light-emitting area is reduced, and the light-emitting brightness of the second area of ​​the sub-light-emitting area is increased. The brightness difference between the first area and the second area of ​​the sub-light-emitting area is reduced, and the light-emitting uniformity of the sub-light-emitting area is improved, thereby improving the uniformity of the light-emitting of the light-emitting module as a whole.

[0037] The above summary is for illustrative purposes only and is not intended to be limiting in any way. In addition to the illustrative aspects, embodiments and features described above, further aspects, embodiments and features of the present disclosure will be readily apparent by reference to the accompanying drawings and the following detailed description. BRIEF DESCRIPTION OF THE DRAWINGS

[0038] In the accompanying drawings, unless otherwise specified, the same reference numerals throughout the multiple drawings represent the same or similar parts or elements. These drawings are not necessarily drawn to scale. It should be understood that these drawings only depict some embodiments according to the present disclosure and should not be regarded as limiting the scope of the present disclosure.

[0039] Figure 1 A schematic diagram of the structure of a backlight module using a blue inorganic light-emitting diode chip and a color conversion layer in the related art;

[0040] Figure 2A schematic diagram of the ratio of viewing angle and light intensity on the light-emitting side of the color conversion layer in the technology of using a blue inorganic light-emitting diode chip in combination with a color conversion layer;

[0041] Figure 3 Schematic diagram of the light emission spectrum of red color conversion layers of different materials when a blue inorganic light emitting diode chip is used;

[0042] Figure 4 It is a structural schematic diagram of a light-emitting module in one embodiment of the present disclosure;

[0043] Figure 5 for Figure 4 A schematic diagram of light transmission of the light emitting module shown;

[0044] Figure 6 A schematic diagram of a planar structure of a light extraction structure in an embodiment;

[0045] Figure 7 It is a structural schematic diagram of a light-emitting module in another embodiment of the present disclosure;

[0046] Figure 8 Schematic diagram of a light emitting module after a color modulation layer is formed in the light emitting module according to an embodiment of the present disclosure.

[0047] Description of reference numerals:

[0048] 10. Substrate; 11. Groove; 12. Transflective film layer; 13. Color modulation layer; 14. Light modulation layer; 141. First dielectric layer; 142. Second dielectric layer; 143. Waveguide layer; 144. Light extraction structure; 145. Retaining wall structure; 15. Shading layer; 16. Electrode layer; 17. Protective layer; 20. Light-emitting device. DETAILED DESCRIPTION

[0049] In the following, only some exemplary embodiments are briefly described. As those skilled in the art will appreciate, the described embodiments may be modified in various ways without departing from the spirit or scope of the present disclosure, and different embodiments may be combined arbitrarily without conflict. Therefore, the drawings and descriptions are considered to be illustrative in nature and not restrictive.

[0050] The inorganic light emitting diode (LED) chip in the present disclosure may be an inorganic sub-millimeter light emitting diode (MiniLight Emitting Diode, referred to as Mini LED) chip, or may be an inorganic micro light emitting diode (MicroLight Emitting Diode, referred to as Micro LED) chip.

[0051] Compared with traditional LED backlight sources, the use of inorganic light-emitting diode chip backlight sources has the following advantages: (1) The use of inorganic light-emitting diode chip modules can achieve a display effect without missing three primary colors, not only covering the wide color gamut of 100% BT2020, but also with bright colors; (2) Inorganic light-emitting diode chips can achieve uniform heat dissipation under high brightness (>1000nit); (3) The use of inorganic light-emitting diode chip direct backlight can achieve ultra-thin LCD display, so that LCD display can be applied to light and thin portable consumer electronic products, such as augmented reality (AR) / virtual reality (VR) glasses, mobile phones, laptops, etc.; (4) Inorganic light-emitting diode chips combined with fine local dimming technology can achieve ultra-high contrast.

[0052] The small structure of inorganic light-emitting diode chips is conducive to achieving more detailed dimming zones (Local Dimming Zones), achieving a higher dynamic range, and achieving higher contrast. In addition, the use of inorganic light-emitting diode chip backlight can also shorten the optical mixing distance and reduce the thickness of the entire display device to achieve ultra-thin products.

[0053] In the related art, the inorganic light emitting diode chip backlight mainly uses a blue inorganic light emitting diode chip in combination with a color conversion layer to achieve color light output, that is, the blue inorganic light emitting diode chip generates blue light, and the blue light is converted into green light or red light through the color conversion layer. Among the three-color inorganic light emitting diode chips of R, G, and B, the blue inorganic light emitting diode chip has a higher efficiency. Therefore, the use of a blue inorganic light emitting diode chip in combination with a color conversion layer can obtain a backlight module with higher efficiency and lower cost.

[0054] There are some disadvantages to using blue inorganic light emitting diode chips in conjunction with color conversion layer technology. Figure 1 A schematic diagram of the structure of a backlight module using a blue inorganic light-emitting diode chip and a color conversion layer in the related art;

[0055] Figure 2 A schematic diagram of the ratio of viewing angle and light intensity on the light-emitting side of the color conversion layer in the technology of using a blue inorganic light-emitting diode chip in combination with a color conversion layer; Figure 3 Schematic diagram of the light emission spectrum of red color conversion layers of different materials when using a blue inorganic light emitting diode chip.

[0056] like Figure 1As shown, a groove 11 is provided on the second side, i.e., the upper side, of the substrate 10, and a color conversion material is filled in the groove 11 to form a color conversion layer 13. An electrode layer 16 is provided on the second side of the substrate 10, and an electrode pin 31 of a blue inorganic light emitting diode chip 30 located above the substrate 10 is coupled to the electrode layer 16. After the blue light emitted by the blue inorganic light emitting diode chip 30 enters the color conversion layer 13, the color conversion layer 13 converts the blue light into green light or red light, and emits it from the first side, i.e., the lower side, of the substrate 10. The area corresponding to the inorganic light emitting diode chip is a sub-light emitting area. The area in the sub-light emitting area that is opposite to the color conversion layer is the first area, and the area in the sub-light emitting area that is opposite to the electrode pin is the second area. The color conversion material is a photoluminescent material, and the color conversion material absorbs blue light and converts it into light of corresponding color, from Figure 1 It can be seen that the light emitted from the light-emitting side of the substrate 10 is normally distributed, the average brightness of the first area in the sub-light-emitting area is high, and the average brightness of the second area is low, which leads to poor overall light uniformity. If a diffusion plate is used, the thickness of the backlight module will increase.

[0057] In order to improve the absorption rate of blue light by the color conversion layer, scattering particles are usually added to the color conversion layer. When the color conversion layer uses quantum dot material, the quantum dots in the color conversion layer are equivalent to self-luminescence, and each quantum dot core can be regarded as a light-emitting point. This will result in strong light at the center of the sub-luminescent area and weak light at the edge, making the first area in the sub-luminescent area where the inorganic light-emitting diode chip is located have strong light, and the area between the two inorganic light-emitting diode chips has weak light, which leads to poor overall light uniformity.

[0058] For any inorganic light emitting diode chip, since the electrode pins are usually made of metal, the light emitted from the side where the electrode pins of the inorganic light emitting diode chip are located is mainly concentrated in the area of ​​the inorganic light emitting diode chip where the electrode pins are located, and almost no light is emitted from the electrode pin area. Furthermore, after the light emitted from the side where the electrode pins of the inorganic light emitting diode chip are located passes through the color conversion layer, it is Figure 2 It can be seen that the light intensity is the largest in the direction perpendicular to the substrate 10 and passing through the geometric center of the color conversion layer (i.e., the viewing angle is 0°), and the light intensity here is defined as 1. The light intensity at both sides of the color conversion layer, i.e., the direction of the large viewing angle (i.e., the viewing angle is 60°), is about 60% of the center position. In addition, the electrode pins are generally located at the edge of the inorganic light emitting diode chip, so when there are multiple inorganic light emitting diode chips arranged in an array, the light intensity between two adjacent organic light emitting diode chips is weak. As a result, the overall light uniformity of the backlight module including multiple inorganic light emitting diode chips arranged in an array is poor.

[0059] like Figure 3 As shown, Figure 3The figure shows the emission spectrum of the red color conversion layer when the color conversion layer materials are Q Dye PR (organic fluorescent material), QDPR-CdSe (cadmium selenide quantum dot material), phosphor, and QDPR-InP (indium phosphide quantum dot material). Figure 2 It can be seen that the color conversion layer material cannot achieve 100% conversion rate of blue light. In order to achieve 100% conversion rate of blue light by the color conversion layer, the thickness of the color conversion layer needs to be increased. Experiments have shown that when the thickness of the color conversion layer is greater than 20μm, the absorption rate of blue light by the color conversion layer can reach more than 99%, but this will result in a thicker backlight module, which is not conducive to the realization of ultra-thin products.

[0060] In order to solve some problems in the related art, an embodiment of the present disclosure provides a light emitting module.

[0061] Figure 4 is a schematic structural diagram of a light-emitting module in an embodiment of the present disclosure, Figure 5 for Figure 4 Schematic diagram of light transmission of the light emitting module shown in FIG. Figure 4 As shown, the light emitting module includes a substrate 10 , a transflective film layer 12 , a color modulation layer 13 , a light modulation layer 14 and a light emitting device 20 .

[0062] like Figure 4 As shown, the substrate 10 has a first side and a second side disposed opposite to each other. Figure 4 In the figure, the first side is the lower side of the substrate 10, and the second side is the upper side of the substrate 10. The transflective film layer 12 is located on the second side of the substrate 10. The transflective film layer 12 allows a portion of the received light to pass through, and reflects a portion of the received light. Therefore, the transflective film layer 12 has the functions of transmitting and reflecting light. The color modulation layer 13 is located on the side of the transflective film layer 12 away from the substrate 10, and the orthographic projection of the color modulation layer 13 on the substrate 10 is located within the orthographic projection of the transflective film layer 12 on the substrate 10.

[0063] The light modulation layer 14 is located on the side of the color modulation layer 13 away from the substrate 10 . The light emitting device 20 is located on the side of the light modulation layer 14 away from the substrate 10 , and the light emitting device 20 corresponds to the color modulation layer 13 .

[0064] like Figure 4 and Figure 5As shown, at least a portion of the first light generated by the light emitting device 20 passes through the light modulation layer 14 and enters the color modulation layer 13. The color modulation layer 13 is configured to modulate the received first light into a second light. A portion of the second light passes through the transflective film layer 12 and is emitted toward the first side of the substrate 10. A portion of the second light is reflected by the transflective film layer 12 and enters the light modulation layer 14. The light modulation layer 14 is configured to modulate the received third light of a preset angle so that the third light is emitted from the periphery of the transflective film layer 12 toward the first side of the substrate 10.

[0065] It should be noted that the third light is a portion of the second light reflected by the transflective film layer 12 , and the light in the second light that is reflected by the transflective film layer 12 and enters the light modulation layer 14 at a preset angle is the third light.

[0066] It can be understood that in the light-emitting module, the first side of the substrate 10 is the light-emitting side of the light-emitting module. The light-emitting module may include multiple sub-light-emitting regions, each of which includes a light-emitting device 20, a transflective film layer 12, a color modulation layer 13 and a light modulation layer 14. The light-emitting device 20, the transflective film layer 12, and the color modulation layer 13 may correspond one to one, and the light modulation layer 14 may correspond to the color modulation layer 13. Exemplarily, the light modulation layer 14 may be located on the entire substrate 10; or, the light modulation layer 14 may also be located in a sub-light-emitting region, and each sub-light-emitting region includes a corresponding light modulation layer 14.

[0067] In the sub-light-emitting area, the area corresponding to the color modulation layer is the first area, and the area corresponding to the electrode pin of the light-emitting device 20 is the second area of ​​the sub-light-emitting area. It can be understood that the first area and the second area of ​​the sub-light-emitting area do not have a strict boundary, and the area located at the center of the sub-light-emitting area can be the first area, and the periphery of the first area can be the second area.

[0068] In the light-emitting module of the embodiment of the present disclosure, at least a portion of the first light generated by the light-emitting device 20 can pass through the light modulation layer 14 to enter the color modulation layer 13, and the color modulation layer 13 can modulate the received first light into a second light. Under the action of the transflective film layer 12, a portion of the second light passes through the transflective film layer 12 and is emitted from the first side (lower side) of the substrate 10, and a portion of the second light is reflected by the transflective film layer 12 and enters the light modulation layer 14. The third light is a light whose incident angle entering the light modulation layer 14 meets a preset angle. The third light entering the light modulation layer 14 after being reflected by the transflective film layer 12 is modulated by the light modulation layer 14 and then emitted from the periphery of the transflective film layer 12 toward the first side (lower side) of the substrate 10.

[0069] In related technologies, such as Figure 1As shown, after the first light emitted by the inorganic light emitting diode chip enters the color conversion layer, the color conversion layer converts the light into a second light of the corresponding color, and the second light is emitted from the first side, i.e., the lower side, of the substrate 10. On the light-emitting side, the average brightness of the first area of ​​the sub-light-emitting area where the inorganic light-emitting diode chip is located is high, and the average brightness of the second area is low, resulting in weak light between adjacent inorganic light-emitting diode chips, making the overall light uniformity of the backlight module poor.

[0070] In the light-emitting module of the embodiment of the present disclosure, under the action of the transflective film layer 12, a part of the second light is directly emitted from the first side of the substrate 10 through the transflective film layer 12, a part of the second light is reflected by the transflective film layer 12 and enters the light modulation layer 14, and the third light entering the light modulation layer 14 is modulated by the light modulation layer 14 and then emitted from the periphery of the transflective film layer 12 toward the first side of the substrate 10. It can be understood that a part of the second light is emitted from the first side of the substrate 10 through the transflective film layer 12, that is, a part of the second light is directly emitted from the light emitting side of the color modulation layer 13 through the transflective film layer 12.

[0071] The light-emitting module of the embodiment of the present disclosure can reduce the number of second light rays directly emitted from the light-emitting side of the color modulation layer 13, and reflect a part of the second light rays to the light modulation layer 14 through the transflective film layer 12. After the light modulation layer 14 modulates the third light rays, the third light rays are emitted from the periphery of the transflective film layer 12 (that is, the periphery of the color modulation layer 13) toward the first side of the substrate 10. Therefore, the light-emitting module of the embodiment of the present disclosure reduces the number of light rays directly emitted from the light-emitting side of the color modulation layer 13, and increases the number of light rays emitted from the periphery of the color modulation layer 13. For a sub-light-emitting area corresponding to a light-emitting device 20, the number of light rays in the first area of ​​the sub-light-emitting area is reduced, and the number of light rays in the second area of ​​the sub-light-emitting area is increased, thereby reducing the light emission brightness of the first area of ​​the sub-light-emitting area, increasing the light emission brightness of the second area of ​​the sub-light-emitting area, reducing the brightness difference between the first area and the second area of ​​the sub-light-emitting area, and improving the light emission uniformity of the sub-light-emitting area, thereby improving the overall light emission uniformity of the light-emitting module.

[0072] For example, the material of the substrate 10 may include glass. The light emitting device 20 may be an inorganic light emitting diode chip.

[0073] In one embodiment, Figure 4As shown, the light modulation layer 14 may include a light extraction structure 144 and a waveguide structure layer. The light extraction structure 144 may be located on the second side of the substrate 10, and the orthographic projection of the light extraction structure 144 on the substrate 10 is located at the periphery of the orthographic projection of the transflective film layer 12 on the substrate 10, that is, the orthographic projection of the light extraction structure 144 on the substrate 10 is located at the periphery of the orthographic projection of the transflective film layer 12 on the substrate 10. The waveguide structure layer is located on the side of the light extraction structure 144 that is away from the substrate 10.

[0074] A portion of the second light is reflected by the reflective film layer 12 and enters the waveguide structure layer. The waveguide structure layer is configured to transmit the received third light to the light extraction structure 144. The light extraction structure 144 is configured to extract the third light. The third light is emitted toward the first side of the substrate 10.

[0075] In the embodiment of the present disclosure, the waveguide structure layer can enable the third light to be transmitted in the waveguide structure layer to avoid light loss; the orthographic projection of the light-collecting structure 144 on the substrate 10 is set to be located at the periphery of the orthographic projection of the transflective film layer 12 on the substrate 10, so that when the third light is transmitted to the light-collecting structure 144, the light-collecting structure 144 can extract the third light, and the light extracted by the light-collecting structure 144 can be emitted from the periphery of the transflective film layer 12 toward the first side of the substrate 10, thereby increasing the light output brightness of the peripheral area of ​​the transflective film layer 12, reducing the brightness difference between the first area and the second area of ​​the sub-light-emitting area, and is beneficial to improving the uniformity of the overall light output of the light-emitting module.

[0076] In one embodiment, Figure 4 As shown, the waveguide structure layer may include a first dielectric layer 141, a waveguide layer 143, and a second dielectric layer 142 which are stacked. The first dielectric layer 141 is closer to the substrate 10 than the second dielectric layer 142. The refractive index of the first dielectric layer 141 is smaller than that of the waveguide layer 143. The refractive index of the second dielectric layer 142 is smaller than that of the waveguide layer 143.

[0077] In such a waveguide structure layer, the refractive index of the first dielectric layer 141 and the second dielectric layer 142 are both smaller than the refractive index of the waveguide layer 143. After the third light enters the waveguide layer 143, the third light can generate total reflection at the interface between the waveguide layer 143 and the first dielectric layer 141, and the third light can generate total reflection at the interface between the waveguide layer 143 and the second dielectric layer 142. Therefore, the third light can be transmitted by total reflection in the waveguide layer 143, thereby avoiding the loss of the third light, improving the intensity of the light extracted by the light extraction structure 144, and further improving the brightness of the second area of ​​the light-emitting device 20.

[0078] For example, when the incident angle of the light entering the waveguide structure layer is θ, the light can be totally reflected and transmitted in the waveguide layer 143. The preset angle can be greater than or equal to θ, and the third light can be understood as the light entering the waveguide structure layer with an incident angle greater than or equal to θ. Therefore, after the third light enters the waveguide structure layer, it can be totally reflected and transmitted in the waveguide layer 143.

[0079] Exemplarily, the refractive index of the first dielectric layer 141 may be in the range of 1.4 to 1.6. For example, the refractive index of the first dielectric layer 141 may be 1.4, 1.5 or 1.6.

[0080] Exemplarily, the refractive index of the second dielectric layer 142 may be in the range of 1.4 to 1.6. For example, the refractive index of the second dielectric layer 142 may be 1.4, 1.5 or 1.6.

[0081] Exemplarily, the refractive index of the waveguide layer 143 may be in the range of 1.6 to 1.8. For example, the refractive index of the waveguide layer 143 may be 1.6, 1.7 or 1.8.

[0082] Here, the refractive indexes of the first dielectric layer 141, the waveguide layer 143 and the second dielectric layer 142 are not specifically limited. As long as the refractive index of the first dielectric layer 141 is smaller than the refractive index of the waveguide layer 143, and the refractive index of the second dielectric layer 142 is smaller than the refractive index of the waveguide layer 143, the effect of the waveguide structure layer in the embodiment of the present disclosure can be achieved.

[0083] For example, the material of the first dielectric layer 141 may include silicon nitride. The thickness of the first dielectric layer 141 may be 100 nm to 200 nm. For example, the thickness of the first dielectric layer 141 may be 100 nm, 150 nm or 200 nm.

[0084] Exemplarily, the material of the waveguide layer 143 includes silicon oxide. The thickness of the waveguide layer 143 may be 200 nm to 500 nm. For example, the thickness of the waveguide layer 143 may be 200 nm, 300 nm, 400 nm or 500 nm.

[0085] Exemplarily, the material of the second dielectric layer 142 includes silicon nitride. The thickness of the second dielectric layer 142 may be 50 nm to 100 nm. For example, the thickness of the second dielectric layer 142 may be 50 nm, 80 nm or 100 nm.

[0086] In one embodiment, the light extraction structure 144 may include a third dielectric layer, and the refractive index of the third dielectric layer is greater than the refractive index of the waveguide layer 143. The orthographic projection of the third dielectric layer on the substrate 10 is located at the periphery of the orthographic projection of the transflective film layer 12 on the substrate 10. The waveguide layer 143 overlaps the surface of the third dielectric layer on the side away from the substrate 10. Since the refractive index of the third dielectric layer is greater than the refractive index of the waveguide layer 143, when the third light is transmitted to the third dielectric layer in the waveguide layer 143, the third light will be emitted from the waveguide layer 143 to the third dielectric layer, and will be emitted from the first side of the substrate 10, so that the third dielectric layer extracts the third light from the waveguide layer 143.

[0087] Exemplarily, the size of the light extraction structure 144 in the first direction may be the same as the size of the first dielectric layer 141 in the first direction, that is, the thickness of the light extraction structure 144 may be the same as the thickness of the first dielectric layer 141. The first direction is a direction perpendicular to the substrate 10. At the position of the light extraction structure 144, the waveguide layer 143 overlaps the surface of the light extraction structure 144 on the side away from the substrate 10, and at the position outside the light extraction structure 144, the waveguide layer 143 overlaps the surface of the first dielectric layer 141 on the side away from the substrate 10, so that in the area surrounded by the light extraction structure 144, the third light can be transmitted in the waveguide layer 143 in a total reflection manner. When the third light is transmitted to the position of the light extraction structure 144, the light extraction structure 144 extracts the third light, and the third light is emitted from the first side of the substrate 10.

[0088] The light emitting module may include a plurality of sub-light emitting regions, each of which may include a light emitting device 20, and the light emitting device 20 corresponds to the sub-light emitting region. The colors of light emitted by adjacent sub-light emitting regions may be different.

[0089] In one embodiment, the light extraction structure 144 may include a grating structure. The grating structure is used to extract light, and collimated light can be extracted, so that the third light is emitted from the first side of the substrate 10 in a direction perpendicular to the substrate 10 after being extracted, thereby avoiding crosstalk between lights of different colors between adjacent sub-light-emitting areas.

[0090] Figure 6 FIG. 1 is a schematic diagram of a planar structure of a light extraction structure in an embodiment. Figure 6 As shown, the orthographic projection of the light extraction structure 144 on the substrate 10 is located at the periphery of the orthographic projection of the transflective film layer 12 on the substrate 10. The light extraction structure 144 includes a grating structure, the period of the grating structure is P, and the width of the grating structure is W.

[0091] When the second light is blue light, the period P of the grating structure is 160nm to 200nm, and the width W of the grating structure is 70nm to 90nm. For example, the period P of the grating structure can be 160nm, 180nm or 200nm, and the width W of the grating structure can be 70nm, 80nm or 90nm. Such a grating structure can take out the blue light in the waveguide structure layer without taking out the red light and the green light, thereby avoiding interference of other color lights on the blue sub-light emitting area and improving the color vividness.

[0092] When the second light is green light, the period P of the grating structure is 180nm to 220nm, and the width W of the grating structure is 90nm to 110nm. For example, the period P of the grating structure is 180nm, 200nm or 220nm, and the width W of the grating structure is 90nm, 100nm or 110nm. Such a grating structure can take out the green light in the waveguide structure layer without taking out the red light and the blue light, thereby avoiding interference of other color lights on the green sub-light emitting area and improving the color vividness.

[0093] When the second light is red light, the period P of the grating structure is 280nm-320nm, and the width W of the grating structure is 80nm-100nm. For example, the period P of the grating structure is 280nm, 300nm or 320nm, and the width W of the grating structure is 80nm, 90nm or 100nm. Such a grating structure can take out the red light in the waveguide structure layer without taking out the green light and the blue light, thereby avoiding interference of other color lights on the red sub-light emitting area and improving the color vividness.

[0094] By setting the period and width of the grating structure according to the color of the second light, the light extraction structure 144 can extract the second light of the corresponding color without extracting light of other colors, thereby avoiding interference of other color optical fibers on the second light and improving color vividness.

[0095] The material of the grating structure may include silver or silicon.

[0096] Exemplarily, the light-emitting module may include a red sub-light-emitting region, a green sub-light-emitting region, and a blue sub-light-emitting region. The period and width of the grating structure in the light-extraction structure 144 may be set according to the color of the sub-light-emitting region, so that the light-extraction structure 144 can extract the light of the corresponding color. For example, the light-extraction structure 144 in the red sub-light-emitting region can extract the red light transmitted in the waveguide structure layer; the light-extraction structure 144 in the green sub-light-emitting region can extract the green light transmitted in the waveguide structure layer; and the light-extraction structure 144 in the blue sub-light-emitting region can extract the blue light transmitted in the waveguide structure layer.

[0097] like Figure 5 As shown, Figure 5 The middle is the green sub-light-emitting area, the left is the red sub-light-emitting area, and the right is the blue sub-light-emitting area. Figure 5 It can be seen that although a small amount of red light in the waveguide layer 143 is transmitted to the green sub-light emitting area, the light extraction structure of the green sub-light emitting area does not extract the red light, thus avoiding the interference of the red light on the green sub-light emitting area. Figure 5 It can be seen that for the red sub-light-emitting area and the green sub-light-emitting area, the blue light with a relatively large angle generated by the light-emitting device may directly enter the waveguide layer and be transmitted by total reflection in the waveguide layer. Since the light extraction structure in the red sub-light-emitting area and the green sub-light-emitting area will not extract the blue light, the blue light will not affect the light-emitting effect of the red sub-light-emitting area and the green sub-light-emitting area.

[0098] Figure 7 FIG. 1 is a schematic diagram of the structure of a light-emitting module in another embodiment of the present disclosure. Figure 7 As shown, the light modulation layer 14 may further include a blocking wall structure 145, the orthographic projection of the blocking wall structure 145 on the substrate 10 being arranged around the orthographic projection of the light extraction structure 144 on the substrate 10. The blocking wall structure 145 is inserted in the waveguide structure layer in a direction perpendicular to the substrate 10 to block the third light from being transmitted toward the adjacent sub-light emitting region. By providing the blocking wall structure 145, the third light can be confined to the corresponding sub-light emitting region to prevent the third light from entering the adjacent sub-light emitting region to cause light crosstalk.

[0099] Exemplarily, in the waveguide structure layer, the third light is transmitted in the waveguide layer 143 , and the retaining wall structure 145 is inserted in the waveguide layer 143 along a direction perpendicular to the substrate 10 .

[0100] Exemplarily, the retaining wall structure 145 may be disposed on the second side surface of the substrate 10 , and the height of the retaining wall structure 145 may be greater than the thickness of the first dielectric layer 141 , so that the retaining wall structure 145 may be inserted into the waveguide layer 143 in a direction perpendicular to the substrate 10 .

[0101] For example, the retaining wall structure 145 may be disposed on the surface of the first dielectric layer 141 away from the substrate 10, so that the retaining wall structure 145 may be inserted into the waveguide layer 143 in a direction perpendicular to the substrate 10. The height of the retaining wall structure 145 may be less than or equal to the thickness of the waveguide layer 143, or the height of the retaining wall structure 145 may be greater than the thickness of the waveguide layer 143 and less than the sum of the thicknesses of the waveguide layer 143 and the second dielectric layer 142.

[0102] The material of the retaining wall structure 145 may include a black resin material. The width of the retaining wall structure 145 may be set as required.

[0103] In one embodiment, the transflective film layer 12 may include a first metal layer and a second metal layer which are stacked, and the first metal layer is closer to the substrate 10 than the second metal layer.

[0104] The material of the first metal layer may include magnesium, and the thickness of the first metal layer may be 20nm to 50nm. For example, the thickness of the first metal layer may be 20nm, 30nm, 40nm or 50nm. The material of the second metal layer may include silver, and the thickness of the second metal layer may be 100nm to 150nm. For example, the thickness of the second metal layer may be 100nm, 110nm, 120nm, 130nm, 140nm or 150nm.

[0105] Such a transflective film layer 12 can play a semi-transparent and semi-reflective role, and the transmittance of the transflective film layer 12 is about 50%, that is, about 50% of the second light can be emitted toward the first side of the substrate 10 through the transflective film layer 12. It should be noted that the transmittance and reflectivity of the transflective film layer 12 can be adjusted by adjusting the film thickness of the first metal layer and the second metal layer.

[0106] In one embodiment, Figure 4 As shown, a groove 11 may be formed on the second side of the substrate 10, and the transflective film layer 12 is located on the surface of the groove 11. The color modulation layer 13 is located in the groove 11. Such a structure can reduce the thickness of the light-emitting module, which is conducive to realizing ultra-thin products.

[0107] Exemplarily, the transflective film layer 12 is located on the bottom wall surface and the side wall surface of the groove 11, the color modulation layer 13 is located in the groove 11, and the upper surface of the color modulation layer 13 can be flush with the second side surface of the substrate 10. Therefore, the transflective film layer 12 and the color modulation layer 13 will not increase the thickness of the light-emitting module.

[0108] like Figure 4 As shown, the cross section of the groove 11 gradually increases from the bottom to the top of the groove 11. Such a groove 11 is an open groove 11, and a part of the second light modulated by the color modulation layer 13 can be emitted from the side wall of the groove 11 through the transflective film layer 12, thereby increasing the brightness of the second area of ​​the sub-light emitting area, which is beneficial to improving the light uniformity of the light emitting module.

[0109] In addition, setting the cross-section of the groove 11 to gradually increase from the bottom to the top of the groove 11 is beneficial to increasing the amount of third light in the light reflected by the transflective film layer 12, so that more third light is emitted from the first side of the substrate 10 at the periphery of the transflective film layer 12, thereby improving the brightness of the second area of ​​the sub-light-emitting area.

[0110] For example, the shape of the groove 11 may be a regular trapezoid, such as Figure 4In other embodiments, the shape of the groove 11 can be a curved surface.

[0111] The depth of the groove 11 may be 10 μm to 20 μm, for example, the depth of the groove 11 may be 10 μm, 15 μm or 20 μm. When the color modulation layer 13 is formed in the groove 11 with such a depth, the thickness of the color modulation layer 13 is about 10 μm to 20 μm. The color modulation layer 13 with such a thickness has a relatively high conversion rate of converting the first light into the second light, fully utilizing the first light and improving the brightness of the light-emitting module.

[0112] The first light may be a third color light. The third color light may be a blue light. The color modulation layer 13 may include a color conversion layer. The color conversion layer is configured to convert the incident third color light into a second light, the color of the second light being different from the color of the first light.

[0113] For example, the second light may be a green light, and the color modulation layer 13 may be a green color conversion layer, which may convert the blue light into the green light.

[0114] For example, the second light may be a red light, and the color modulation layer 13 may be a red color conversion layer, which may convert the blue light into the red light.

[0115] Exemplarily, the color of the second light may be the same as the color of the first light. The color modulation layer 13 may include a light-transmitting material layer. The first light is converted into the second light after passing through the light-transmitting material layer. The material of the light-transmitting material layer may include an organic material with good light transmittance, such as photoresist.

[0116] In order to achieve the conversion of light color, the material of the color conversion layer may include quantum dot material. The quantum dot material may include perovskite quantum dot material, cadmium selenide quantum dot material or indium phosphide quantum dot material. When the material of the color conversion layer includes quantum dot material, the light emitting module may further include an encapsulation layer, which is located between the color conversion layer and the light modulation layer 14. The encapsulation layer may cover the color conversion layer, and the encapsulation layer plays an encapsulation and protection role for the color conversion layer to prevent water and oxygen from corroding the quantum dot material.

[0117] The material of the color conversion layer may include organic fluorescent material or fluorescent powder. The color conversion layer may also use other color conversion materials that can convert the first light into the second light.

[0118] For example, Figure 4As shown, the color modulation layer 13 may include a red color conversion layer 13a, a green color conversion layer 13b and a light-transmitting material layer 13c. The red color conversion layer 13a converts the blue light emitted by the light-emitting device 20 into red light, and the green color conversion layer 13b converts the blue light emitted by the light-emitting device 20 into green light. The blue light remains blue light after passing through the light-transmitting material layer 13c.

[0119] In one embodiment, scattering particles are provided in the color modulation layer 13. Scattering particles are provided in the color conversion layer to increase the propagation path of the blue light in the color conversion layer and improve the conversion rate of the color conversion layer to the blue light. Scattering particles are provided in the light-transmitting material layer to disperse the blue light incident into the light-transmitting material layer, prevent the blue light from being emitted vertically from the light-transmitting material layer, and increase the amount of the third light.

[0120] In addition, scattering particles are arranged in the color modulation layer 13, and the second light modulated by the color modulation layer 13 can generate scattered light under the scattering effect of the scattering particles, such as Figure 5 As shown, the third light in the scattered light that meets the preset angle can directly enter the light modulation layer 14, further increasing the number of third light entering the light modulation layer, improving the brightness of the second area of ​​the sub-light-emitting area, and better improving the light uniformity of the light-emitting module.

[0121] The material of the scattering particles may include silicon oxide, such as silicon dioxide. The particle size of the scattering particles may be 300 nm to 500 nm.

[0122] In one embodiment, Figure 4 and Figure 7 As shown, the light-emitting module may further include a shading layer 15, the shading layer 15 is located on the side of the light modulation layer 14 away from the substrate 10, and the light-emitting device 20 is located on the side of the shading layer 15 away from the substrate 10. The orthographic projection of the shading layer 15 on the substrate 10 is located between the orthographic projections of the adjacent color modulation layers 13 on the substrate 10. The orthographic projection of the shading layer 15 on the substrate 10 is set to be located between the orthographic projections of the adjacent color modulation layers 13 on the substrate 10, so that the large-angle light generated by the light-emitting device 20 will not enter the color modulation layer 13 in the adjacent sub-light-emitting area under the shielding of the shading layer 15, thereby avoiding cross-color between adjacent sub-light-emitting areas. The material of the shading layer 15 can be a black resin material.

[0123] like Figure 4As shown, the light emitting module may further include an electrode layer 16, the electrode layer 16 includes a first electrode and a second electrode, and the first electrode and the second electrode are respectively connected to the electrode pins of the light emitting device 20. For example, the electrode layer 16 may be located on the side of the light shielding layer 15 away from the substrate 10. When the light emitting device 20 uses an inorganic light emitting diode chip, the anode pin and the cathode pin of the inorganic light emitting diode chip are respectively coupled to the first electrode and the second electrode. The material of the electrode layer 16 may include copper.

[0124] like Figure 4 As shown, the light emitting module may further include a protective layer 17, which is located on the side of the light emitting device 20 away from the substrate 10, and may cover and protect the light emitting device 20. Exemplarily, the material of the protective layer 17 may include white ink.

[0125] Below through Figure 7 The preparation process of the light-emitting module shown in the figure further illustrates the technical solution of the embodiment of the present disclosure. Figure 7 In the light-emitting module shown, the light-emitting module may include a red sub-light-emitting region, a green sub-light-emitting region, and a blue sub-light-emitting region. It is understood that the "patterning" mentioned herein includes processes such as coating photoresist, mask exposure, development, etching, and stripping photoresist when the patterned material is an inorganic material or a metal, and includes processes such as mask exposure and development when the patterned material is an organic material. The evaporation, deposition, coating, and coating mentioned herein are all mature preparation processes in the relevant technology.

[0126] A groove 11 is formed on the second side of the substrate 10 by etching process, and the depth of the groove 11 is 10 μm to 20 μm. Figure 8 As shown, Figure 8 Schematic diagram of a color modulation layer formed in a light emitting module according to an embodiment of the present disclosure. For example, three grooves 11 may be formed, and the three grooves 11 may be located in a red sub-light emitting region, a green sub-light emitting region, and a blue sub-light emitting region, respectively.

[0127] A transflective film is deposited on the surface of the groove 11 by magnetron sputtering; and the transflective film outside the groove 11 is removed by etching, and the transflective film on the surface of the groove 11 forms a transflective film layer 12, such as Figure 8 shown.

[0128] A color modulation layer 13 is formed on the surface of the transflective film in the groove 11 by patterning technology or inkjet printing. Figure 8As shown. A red color conversion layer 13a is formed in the groove 11 of the red sub-light emitting area, a green color conversion layer 13b is formed in the groove 11 of the green sub-light emitting area, and a light-transmitting material layer 13c is formed in the groove 11 of the blue sub-light emitting area. When the color conversion layer adopts quantum dot material, an encapsulation layer is formed on the color modulation layer 13. The encapsulation layer can cover the color conversion layer, and the encapsulation layer plays an encapsulation and protection role on the color conversion layer to prevent water and oxygen from corroding the quantum dot material.

[0129] A grating structure is formed on the first side of the substrate 10 by using nanoimprinting and etching processes. The grating structure is arranged around the groove 11. Figure 7 As shown. In the blue sub-light-emitting area, the period P of the grating structure is 160nm to 200nm, and the width W of the grating structure is 70nm to 90nm. In the green sub-light-emitting area, the period P of the grating structure is 180nm to 220nm, and the width W of the grating structure is 90nm to 110nm. In the red sub-light-emitting area, the period P of the grating structure is 280nm to 320nm, and the width W of the grating structure is 80nm to 100nm.

[0130] A retaining wall structure is formed on the first side of the substrate 10. The retaining wall structure is arranged around the grating structure. The height of the retaining wall structure is greater than the height of the grating structure. Figure 7 shown.

[0131] A first dielectric layer 141 is formed on the first side of the substrate 10 on which the grating structure and the retaining wall structure are formed. Figure 7 As shown. The thickness of the first dielectric layer 141 may range from 100 nm to 200 nm. The thickness of the first dielectric layer 141 may be the same as the thickness of the grating structure. The material of the first dielectric layer 141 may include silicon nitride.

[0132] A waveguide layer 143 is formed on the side of the first dielectric layer 141 away from the substrate 10. Figure 7 As shown. The material of the waveguide layer 143 includes silicon oxide. The thickness of the waveguide layer 143 may be 200 nm to 500 nm. The retaining wall structure is inserted in the waveguide structure layer along a direction perpendicular to the substrate 10 .

[0133] A second dielectric layer 142 is formed on the side of the waveguide layer 143 away from the substrate 10. Figure 7 As shown, the material of the second dielectric layer 142 includes silicon nitride. The thickness of the second dielectric layer 142 may be 50 nm to 100 nm.

[0134] A light shielding layer 15 is formed on a side of the second dielectric layer 142 facing away from the substrate 10 .

[0135] An electrode layer 16 is formed on the side of the light shielding layer 15 facing away from the substrate 10 . The inorganic light emitting diode chip is coupled to the corresponding electrode in the electrode layer 16 .

[0136] A white ink layer is formed on the inorganic light emitting diode chip, and the white ink layer serves as a protective layer 17 to protect the inorganic light emitting diode chip.

[0137] In order to reduce the thickness of the light emitting module, the substrate 10 is thinned by mechanical grinding or chemical polishing on the first side of the substrate 10 to reduce the thickness of the substrate 10 and thus reduce the thickness of the light emitting module.

[0138] The present disclosure also provides a display device, comprising the light-emitting module in any embodiment of the present disclosure.

[0139] The present disclosure further provides a display device, comprising the light-emitting module in any embodiment of the present disclosure, and further comprising a liquid crystal display panel. The liquid crystal display panel is located on a side of the substrate 10 in the light-emitting module close to the first side.

[0140] The light-emitting module in the embodiment of the present disclosure can be installed in a display device as a display panel, or as a light source. The display device can be: electronic paper, mobile phone, tablet computer, television, monitor, notebook computer, digital photo frame, navigator, wearable display device, and any other product or component with display function.

[0141] The light-emitting module in the embodiment of the present disclosure can also be used as a light source in lighting products.

[0142] Herein, the thickness or height of A should be understood as the dimension of A in a direction perpendicular to the substrate.

[0143] In the description of this specification, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise", "axial", "radial", "circumferential" and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present disclosure and simplifying the description, and do not indicate or imply that the referred device or element must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as a limitation on the present disclosure.

[0144] In addition, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Therefore, a feature defined as "first" or "second" may explicitly or implicitly include one or more of the features. In the description of the present disclosure, the meaning of "plurality" is two or more, unless otherwise clearly and specifically defined.

[0145] In the present disclosure, unless otherwise clearly specified and limited, the terms "installed", "connected", "connected", "fixed" and the like should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection, an electrical connection, or a communication; it can be a direct connection, or an indirect connection through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements. For ordinary technicians in this field, the specific meanings of the above terms in the present disclosure can be understood according to specific circumstances.

[0146] In the present disclosure, unless otherwise clearly specified and limited, a first feature being “above” or “below” a second feature may include that the first and second features are in direct contact, or may include that the first and second features are not in direct contact but are in contact through another feature between them. Moreover, a first feature being “above”, “above”, and “above” a second feature includes that the first feature is directly above and obliquely above the second feature, or simply indicates that the first feature is higher in level than the second feature. A first feature being “below”, “below”, and “below” a second feature includes that the first feature is directly above and obliquely above the second feature, or simply indicates that the first feature is lower in level than the second feature.

[0147] The disclosure above provides many different embodiments or examples to implement different structures of the present disclosure. In order to simplify the present disclosure, the components and settings of specific examples are described above. Of course, they are only examples, and the purpose is not to limit the present disclosure. In addition, the present disclosure can repeat reference numbers and / or reference letters in different examples, and this repetition is for the purpose of simplification and clarity, which itself does not indicate the relationship between the various embodiments and / or settings discussed.

[0148] The above are only specific embodiments of the present disclosure, but the protection scope of the present disclosure is not limited thereto. Any technician familiar with the technical field can easily think of various changes or substitutions within the technical scope disclosed in the present disclosure, which should be included in the protection scope of the present disclosure. Therefore, the protection scope of the present disclosure should be based on the protection scope of the claims.

Claims

1. A light emitting module, characterized in that: include: a substrate having a first side and a second side disposed opposite to each other; a transflective film layer, located on the second side of the substrate, the transflective film layer allowing a portion of the received light to pass through and reflecting a portion of the received light; A color modulation layer is located on a side of the transflective film layer away from the substrate, and an orthographic projection of the color modulation layer on the substrate is located within an orthographic projection of the transflective film layer on the substrate; a light modulation layer, located on a side of the color modulation layer away from the substrate; A light emitting device, located on a side of the light modulation layer away from the substrate, the light emitting device corresponding to the color modulation layer; At least a portion of the first light generated by the light-emitting device passes through the light modulation layer and enters the color modulation layer, the color modulation layer is configured to modulate the received first light into a second light, a portion of the second light passes through the transflective film layer and is emitted toward the first side of the substrate, a portion of the second light is reflected by the transflective film layer and enters the light modulation layer, and the light modulation layer is configured to modulate the received third light of a preset angle so that the third light is emitted from the periphery of the transflective film layer toward the first side of the substrate.

2. The light emitting module according to claim 1, characterized in that: The light modulation layer comprises a light extraction structure and a waveguide structure layer, wherein the light extraction structure is located on the second side of the substrate, the orthographic projection of the light extraction structure on the substrate is located at the periphery of the orthographic projection of the transflective film layer on the substrate, and the waveguide structure layer is located on a side of the light extraction structure away from the substrate; A portion of the second light is reflected by the reflective film layer and enters the waveguide structure layer. The waveguide structure layer is configured to transmit the received third light to the light extraction structure. The light extraction structure is configured to extract the third light. The third light is emitted toward the first side of the substrate.

3. The light emitting module according to claim 2, characterized in that: The waveguide structure layer includes a first dielectric layer, a waveguide layer, and a second dielectric layer which are stacked. The first dielectric layer is closer to the substrate than the second dielectric layer. The refractive index of the first dielectric layer is smaller than that of the waveguide layer. The refractive index of the second dielectric layer is smaller than that of the waveguide layer.

4. The light emitting module according to claim 3, characterized in that: The refractive index of the first dielectric layer is in the range of 1.4 to 1.6, the refractive index of the second dielectric layer is in the range of 1.4 to 1.6, and the refractive index of the waveguide layer is in the range of 1.6 to 1.

8.

5. The light emitting module according to claim 4, characterized in that: The material of the first dielectric layer includes silicon nitride, and the thickness of the first dielectric layer is 100 nm to 200 nm; and / or, The material of the waveguide layer includes silicon oxide, and the thickness of the waveguide layer is 200nm to 500nm; and / or, The material of the second dielectric layer includes silicon nitride, and the thickness of the second dielectric layer is 50 nm to 100 nm.

6. The light emitting module according to claim 2, characterized in that: The light extraction structure includes a grating structure; The second light is a blue light, the period of the grating structure is 160nm-200nm, and the width of the grating structure is 70nm-90nm; and / or, The second light is green light, the period of the grating structure is 180nm-220nm, and the width of the grating structure is 90nm-110nm; and / or, The second light is a red light, the period of the grating structure is 280nm-320nm, and the width of the grating structure is 80nm-100nm.

7. The light emitting module according to claim 2, characterized in that: The light-emitting module includes a plurality of sub-light-emitting areas, each of which includes the light-emitting device. The light modulation layer also includes a blocking wall structure, the orthographic projection of the blocking wall structure on the substrate is located outside the orthographic projection of the light-collecting structure on the substrate, and the blocking wall structure is inserted in the waveguide structure layer along a direction perpendicular to the substrate to block the third light from transmitting toward an adjacent sub-light-emitting area.

8. The light emitting module according to claim 1, characterized in that: A groove is formed on the second side of the substrate, the transflective film layer is located on the surface of the groove, and the color modulation layer is located in the groove.

9. The light emitting module according to claim 8, characterized in that: The cross section of the groove gradually increases from the bottom toward the top of the groove.

10. The light emitting module according to claim 8, characterized in that: The depth of the groove is 10 μm to 20 μm.

11. The light emitting module according to claim 1, characterized in that: The reflective film layer includes a first metal layer and a second metal layer that are stacked, the first metal layer is closer to the substrate than the second metal layer, the material of the first metal layer includes magnesium, the thickness of the first metal layer is 20nm to 50nm, the material of the second metal layer includes silver, the thickness of the second metal layer is 100nm to 150nm.

12. The light emitting module according to claim 1, characterized in that: The first light is a third color light, the color modulation layer includes a color conversion layer, and the color conversion layer is configured to convert the incident third color light into the second light, and the color of the second light is different from the color of the first light; and / or, The first light is a third color light, the color modulation layer includes a light-transmitting material layer, the first light is the second light after passing through the light-transmitting material layer, and the color of the second light is the same as the color of the first light.

13. The light emitting module according to claim 12, characterized in that: The material of the color conversion layer includes quantum dot material, organic fluorescent material or fluorescent powder.

14. The light emitting module according to claim 12, characterized in that: The first light is a blue light, and the second light is a red light or a green light.

15. The light emitting module according to claim 1, characterized in that: It also includes a shading layer, which is located on the side of the light modulation layer away from the substrate, the light-emitting device is located on the side of the shading layer away from the substrate, and the orthographic projection of the shading layer on the substrate is located between the orthographic projections of adjacent color modulation layers on the substrate.

16. A display device, characterized in that: A light-emitting module comprising any one of claims 1-15.

17. A display device, characterized in that: The light-emitting module comprises any one of claims 1 to 15, and further comprises a liquid crystal display panel, wherein the liquid crystal display panel is located on a side of the substrate in the light-emitting module close to the first side.

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