Anti-corrosion developing solution as well as preparation method and application thereof

Abstract

The invention discloses a corrosion inhibition developing solution and a preparation method and application thereof.The corrosion inhibition developing solution is prepared from quaternary ammonium hydroxide, binary acid, organic amine, polyhydric alcohol, a wetting agent, a stabilizer and water, through the synergistic effect of all the components, the corrosion speed of the corrosion inhibition developing solution on a metal aluminum substrate is low, and the corrosion inhibition developing solution has the good corrosion inhibition effect on the metal aluminum substrate. The problem of poor patterns caused by development of metal sensitive to alkali can be improved, meanwhile, the developing performance of the developing solution is excellent, and the loss of an unexposed region is smaller. In addition, the photoresist which can be developed by the anti-corrosion developing solution disclosed by the invention can be in a negative type and a positive type, and the type of the photoresist is not specially limited. According to the invention, the developing solution is prepared by using the wetting agent, so that the surface tension of the whole developing solution system can be obviously reduced under the condition that no surfactant except quaternary ammonium hydroxide is used, and the defect that the surface tension of the traditional developing solution is too large and the photoresist cannot be fully infiltrated is overcome; and the developing effect is not influenced by excessive foam.

Description

Technical Field

[0001] The invention belongs to the technical field of semiconductors, and in particular relates to an anti-corrosion developer and a preparation method and application thereof. Background Art

[0002] Photolithography is a process that uses processes such as coating, exposure, development, etching and cleaning to transfer the pattern on the photomask to the substrate material. It is an important step in the semiconductor device manufacturing process. The photolithography process has developed from G-line (436nm), I-line (365nm), KrF (248nm), ArF (193nm) to the most advanced ArF-Immersion (134nm) and extreme ultraviolet (EUV). Its progress is inseparable from the continuous development of supporting chemical reagents. Among them, photoresist is an organic substance that reacts with the photosensitizer contained in it before and after being exposed to the light source, and changes the solubility of the glue. It is one of the key materials for fine pattern processing in integrated circuits. It is mainly composed of photosensitizer, polymer substrate and solvent. The solvent used is generally an alcohol ether ester organic solvent.

[0003] The developer is a chemical reagent used to dissolve the soluble part of the photoresist after exposure. Its development mechanism is mainly based on the fact that the solubility of the base material resin in the photoresist component after exposure will change significantly under the action of hydrogen ions. At present, the most commonly used developer is 2.38wt% TMAH solution and its formulated products. Compared with alkaline solutions such as potassium hydroxide aqueous solution or sodium hydroxide aqueous solution, it does not contain metal ions, which can reduce the defects caused by metal ions in advanced processes.

[0004] Because the development of the photoresist is completed on the substrate, the developer will contact the base, but the developer provided by the prior art has a high degree of damage to the metal substrate, and there are many problems such as corrosion of the metal aluminum substrate, generation of metal oxide scale, poor development uniformity, and development foam interference, resulting in low product yield. Summary of the invention

[0005] The main purpose of the present invention is to provide an anti-corrosion developer and its preparation method and application to solve the problems in the background technology. The anti-corrosion developer of the present invention has a good corrosion inhibition effect on aluminum substrates, can improve the poor pattern problem caused by the development of metals sensitive to alkali and oxides, and at the same time ensure that the developer has excellent development performance and the unexposed area is not subject to additional loss. The photoresist suitable for the corrosion-inhibiting developer can be positive or negative, and has universality.

[0006] In order to solve the above technical problems, the present invention provides the following technical solutions:

[0007] An anti-corrosion developer comprises the following raw materials: quaternary ammonium hydroxide, dibasic acid, organic amine, polyol, wetting agent, stabilizer and water.

[0008] As a preferred embodiment of the anti-corrosion developer, the pH value of the anti-corrosion developer is 13-14.

[0009] As a preferred embodiment of the anti-corrosion developer, the anti-corrosion developer further comprises: an organic base and / or an organic acid.

[0010] As a preferred embodiment of the anti-corrosion developer, the anti-corrosion developer comprises the following components in percentage by weight: 2-3 wt% quaternary ammonium hydroxide; 0.1%-20 wt% dibasic acid; 0.1%-20 wt% organic amine; 0.1%-20 wt% polyol; 0.1%-20 wt% wetting agent; 0.1%-20 wt% stabilizer, and the balance is water.

[0011] As a preferred embodiment of the anti-corrosion developer, the quaternary ammonium hydroxide is selected from at least one of the compounds shown in Formula 1:

[0012]

[0013] In formula 1, R1, R2, R3, and R4 are the same or different and are independently selected from C1-C5 alkyl groups; the quaternary ammonium hydroxide is selected from one or more of tetramethylammonium hydroxide, tetraethylammonium hydroxide, tetrapropylammonium hydroxide, tetrabutylammonium hydroxide, tetrapentylammonium hydroxide, and tetrahexylammonium hydroxide; and the weight percentage of the quaternary ammonium hydroxide is 2-3wt%.

[0014] As a preferred embodiment of the anti-corrosion developer, the dibasic acid is selected from at least one of the compounds shown in Formula 2:

[0015]

[0016] In formula 2, R1 and R2 are the same or different and are independently selected from H or C1-C5 alkyl or hydroxyl or amino or halogen; the dibasic acid is selected from one or more of methylene diphosphonic acid, vinyl diphosphonic acid, propane diphosphonic acid, butane diphosphonic acid, pentane diphosphonic acid, aminomethylene diphosphonic acid, hydroxymethylene diphosphonic acid, hydroxyethylidene diphosphonic acid, chlorodronic acid, methylene disulfonic acid, ethane disulfonic acid, propane disulfonic acid, butane disulfonic acid, pentane disulfonic acid, 2-oxopropane-1,3-disulfonic acid, trithionic acid, oxalic acid, betaine acid, succinic acid, gum acid, adipic acid, syrup acid, suberic acid, azelaic acid, sebaceous acid, trans-azetidine-2,4-dicarboxylic acid, 2-phosphoethanolic acid, and phosphoenolpyruvic acid; the weight percentage of the dibasic acid is 0.1%-20wt%.

[0017] As a preferred embodiment of the anti-corrosion developer, the organic amine is selected from at least one of the compounds shown in Formula 3:

[0018]

[0019] In formula 3, R1, R2, and R3 are the same or different and are independently selected from hydrogen, C1-C3 alkyl or hydroxyl or carboxyl or silanol; the organic amine is selected from one or more of trimethylamine, trimethylolamine, triethylamine, triethanolamine, aminotriethylamide, cysteine, glutamine, aminoethylaminopropyltrimethoxysilane, and aminopropyltrimethoxysilane; and the weight percentage of the organic amine is 0.1%-20wt%.

[0020] As a preferred embodiment of the anti-corrosion developer, the polyol is selected from at least one of the compounds shown in Formula 4:

[0021]

[0022] The polyol is selected from one or more of glycol, glycerol, threitol, xylitol, mannose, mannitol, isomannite, mannitol, mannoheptitol, octyl glycol, mannobiose, mannotriose, and stachyose; the weight percentage of the polyol is 0.1%-20wt%.

[0023] As a preferred embodiment of the anti-corrosion developer, the wetting agent is selected from at least one of the compounds shown in Formula 5:

[0024]

[0025] In formula 5, R1 and R2 are the same or different and are independently selected from C1-C5 alkyl or hydroxyl or carboxyl or halogen; the wetting agent is selected from one or more of triethylene glycol, triethylene glycol monomethyl ether, triethylene glycol dimethyl ether, triethylene glycol diacetate, triethylene glycol monochlorohydrin, bromo-triethylene glycol-carboxylic acid, triethylene glycol bischloroformate, triethylene glycol monoisopropyl ether, triethylene glycol monobutyl ether, triethylene glycol butyl methyl ether, triethylene glycol mono-tert-butyl ether, triethylene glycol dimaleate, and triethylene glycol diacrylate; the weight percentage of the wetting agent is 0.1%-20wt%.

[0026] As a preferred embodiment of the anti-corrosion developer, the stabilizer is selected from at least one of the compounds shown in Formula 6:

[0027]

[0028] In formula 6, R1, R2, R3, and R4 are the same or different and are independently selected from C1-C5 alkyl or ether group or carbonyl group or ester group; the stabilizer is selected from one or more of dimethyl oxalate, diethyl oxalate, dipropyl oxalate, dibutyl oxalate, dipentyl oxalate, dimethyl betaine, diethyl betaine, dipropyl betaine, dibutyl betaine, dipentyl betaine, dimethyl succinate, diethyl succinate, dipropyl succinate, dibutyl succinate, dipentyl succinate, dimethyl gum, diethyl gum, dipropyl gum, dibutyl gum, dipentyl gum, dimethyl adipose, diethyl adipose, dipropyl adipose, dibutyl adipose, and dipentyl adipose; the weight percentage of the stabilizer is 0.1%-20wt%.

[0029] The invention also provides a method for preparing an anti-corrosion developer, which can be prepared by uniformly mixing quaternary ammonium hydroxide, dibasic acid, organic amine, polyol, wetting agent, stabilizer and water.

[0030] The present invention discloses an application of the anti-corrosion developer, and the anti-corrosion developer is suitable for the field of photolithography.

[0031] The beneficial effects of the present invention are:

[0032] The main purpose of the present invention is to provide an anti-corrosion developer and its preparation method and application, comprising the following raw materials: quaternary ammonium hydroxide, dibasic acid, organic amine, polyol, wetting agent, stabilizer and water. Through the synergistic effect of the above components, the corrosion rate of the anti-corrosion alkaline developer to the metal aluminum substrate is slow, which can improve the poor pattern problem caused by the development of alkali-sensitive metals, and at the same time ensure that the developer has excellent development performance and the loss of unexposed areas is smaller. In addition, the photoresist that can be developed by the anti-corrosion developer of the present invention can be negative and positive types, and the photoresist type is not particularly limited. The present invention uses a wetting agent to prepare the developer, so that the surface tension of the entire developer system can be significantly reduced without using a surfactant other than quaternary ammonium hydroxide, overcoming the deficiency that the traditional developer surface tension is too large to fully wet the photoresist, and will not have too much foam to affect the development effect. DETAILED DESCRIPTION

[0033] The following will be combined with the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0034] The embodiment of the present invention provides an anti-corrosion developer, which includes the following raw materials: quaternary ammonium hydroxide, dibasic acid, organic amine, polyol, wetting agent, stabilizer and water.

[0035] As a preferred embodiment of the anti-corrosion developer, the pH value of the anti-corrosion developer is 13-14.

[0036] As a preferred embodiment of the anti-corrosion developer, the anti-corrosion developer further comprises: an organic base and / or an organic acid.

[0037] As a preferred embodiment of the anti-corrosion developer, the anti-corrosion developer comprises the following components in percentage by weight: 2-3 wt% quaternary ammonium hydroxide; 0.1%-20 wt% dibasic acid; 0.1%-20 wt% organic amine; 0.1%-20 wt% polyol; 0.1%-20 wt% wetting agent; 0.1%-20 wt% stabilizer, and the balance is water.

[0038] As a preferred embodiment of the anti-corrosion developer, the quaternary ammonium hydroxide is selected from at least one of the compounds shown in Formula 1:

[0039]

[0040] In formula 1, R1, R2, R3, and R4 are the same or different and are independently selected from C1-C5 alkyl groups; the quaternary ammonium hydroxide is selected from one or more of tetramethylammonium hydroxide, tetraethylammonium hydroxide, tetrapropylammonium hydroxide, tetrabutylammonium hydroxide, tetrapentylammonium hydroxide, and tetrahexylammonium hydroxide; and the weight percentage of the quaternary ammonium hydroxide is 2-3wt%.

[0041] As a preferred embodiment of the anti-corrosion developer, the dibasic acid is selected from at least one of the compounds shown in Formula 2:

[0042]

[0043] In formula 2, R1 and R2 are the same or different and are independently selected from H or C1-C5 alkyl or hydroxyl or amino or halogen; the dibasic acid is selected from one or more of methylene diphosphonic acid, vinyl diphosphonic acid, propane diphosphonic acid, butane diphosphonic acid, pentane diphosphonic acid, aminomethylene diphosphonic acid, hydroxymethylene diphosphonic acid, hydroxyethylidene diphosphonic acid, chlorodronic acid, methylene disulfonic acid, ethane disulfonic acid, propane disulfonic acid, butane disulfonic acid, pentane disulfonic acid, 2-oxopropane-1,3-disulfonic acid, trithionic acid, oxalic acid, betaine acid, succinic acid, gum acid, adipic acid, syrup acid, suberic acid, azelaic acid, sebaceous acid, trans-azetidine-2,4-dicarboxylic acid, 2-phosphoethanolic acid, and phosphoenolpyruvic acid; the weight percentage of the dibasic acid is 0.1%-20wt%.

[0044] As a preferred embodiment of the anti-corrosion developer, the organic amine is selected from at least one of the compounds shown in Formula 3:

[0045]

[0046] In formula 3, R1, R2, and R3 are the same or different and are independently selected from hydrogen, C1-C3 alkyl or hydroxyl or carboxyl or silanol; the organic amine is selected from one or more of trimethylamine, trimethylolamine, triethylamine, triethanolamine, aminotriethylamide, cysteine, glutamine, aminoethylaminopropyltrimethoxysilane, and aminopropyltrimethoxysilane; and the weight percentage of the organic amine is 0.1%-20wt%.

[0047] As a preferred embodiment of the anti-corrosion developer, the polyol is selected from at least one of the compounds shown in Formula 4:

[0048]

[0049] The polyol is selected from one or more of glycol, glycerol, threitol, xylitol, mannose, mannitol, isomannite, mannitol, mannoheptitol, octyl glycol, mannobiose, mannotriose, and stachyose; the weight percentage of the polyol is 0.1%-20wt%.

[0050] As a preferred embodiment of the anti-corrosion developer, the wetting agent is selected from at least one of the compounds shown in Formula 5:

[0051]

[0052] In formula 5, R1 and R2 are the same or different and are independently selected from C1-C5 alkyl or hydroxyl or carboxyl or halogen; the wetting agent is selected from one or more of triethylene glycol, triethylene glycol monomethyl ether, triethylene glycol dimethyl ether, triethylene glycol diacetate, triethylene glycol monochlorohydrin, bromo-triethylene glycol-carboxylic acid, triethylene glycol bischloroformate, triethylene glycol monoisopropyl ether, triethylene glycol monobutyl ether, triethylene glycol butyl methyl ether, triethylene glycol mono-tert-butyl ether, triethylene glycol dimaleate, and triethylene glycol diacrylate; the weight percentage of the wetting agent is 0.1%-20wt%.

[0053] As a preferred embodiment of the anti-corrosion developer, the stabilizer is selected from at least one of the compounds shown in Formula 6:

[0054]

[0055] In formula 6, R1, R2, R3, and R4 are the same or different and are independently selected from C1-C5 alkyl or ether group or carbonyl group or ester group; the stabilizer is selected from one or more of dimethyl oxalate, diethyl oxalate, dipropyl oxalate, dibutyl oxalate, dipentyl oxalate, dimethyl betaine, diethyl betaine, dipropyl betaine, dibutyl betaine, dipentyl betaine, dimethyl succinate, diethyl succinate, dipropyl succinate, dibutyl succinate, dipentyl succinate, dimethyl gum, diethyl gum, dipropyl gum, dibutyl gum, dipentyl gum, dimethyl adipose, diethyl adipose, dipropyl adipose, dibutyl adipose, and dipentyl adipose; the weight percentage of the stabilizer is 0.1%-20wt%.

[0056] The invention also provides a method for preparing an anti-corrosion developer, which can be prepared by uniformly mixing quaternary ammonium hydroxide, dibasic acid, organic amine, polyol, wetting agent, stabilizer and water.

[0057] The present invention discloses an application of the anti-corrosion developer, and the anti-corrosion developer is suitable for the field of photolithography.

[0058] The following is the specific experimental process:

[0059] Blank Group

[0060] By mass percentage: quaternary ammonium hydroxide 2.38%; water 97.62%.

[0061] Example 1

[0062] A method for preparing a photoresist developer comprises the following steps: by mass percentage: 2.38% quaternary ammonium hydroxide; 1% dibasic acid; 1% polyol; 1% organic amine; 1% wetting agent; 1% stabilizer; and 92.62% water.

[0063] Example 2

[0064] A method for preparing a photoresist developer comprises the following steps: by mass percentage: 2.38% quaternary ammonium hydroxide; 5% dibasic acid; 1% polyol; 1% organic amine; 1% wetting agent; 1% stabilizer; and 88.62% water.

[0065] Example 3

[0066] A method for preparing a photoresist developer comprises the following steps: by mass percentage: 2.38% quaternary ammonium hydroxide; 1% dibasic acid; 5% polyol; 1% organic amine; 1% wetting agent; 1% stabilizer; and 88.62% water.

[0067] Example 4

[0068] A method for preparing a photoresist developer comprises the following steps: by mass percentage: 2.38% quaternary ammonium hydroxide; 1% dibasic acid; 1% polyol; 5% organic amine; 1% wetting agent; 1% stabilizer; and 88.62% water.

[0069] Example 5

[0070] A method for preparing a photoresist developer comprises the following steps: by mass percentage: 2.38% quaternary ammonium hydroxide; 1% dibasic acid; 1% polyol; 1% organic amine; 5% wetting agent; 1% stabilizer; and 88.62% water.

[0071] Example 6

[0072] A method for preparing a photoresist developer comprises the following steps: by mass percentage: 2.38% quaternary ammonium hydroxide; 1% dibasic acid; 1% polyol; 1% organic amine; 1% wetting agent; 5% stabilizer; and 88.62% water.

[0073] Example 7

[0074] A method for preparing a photoresist developer comprises the following steps: by mass percentage: 2.38% quaternary ammonium hydroxide; 1% dibasic acid; 5% polyol; 5% organic amine; 1% wetting agent; 1% stabilizer; and 84.62% water.

[0075] Example 8

[0076] A method for preparing a photoresist developer comprises the following steps: by mass percentage: 2.38% quaternary ammonium hydroxide; 1% dibasic acid; 5% polyol; 1% organic amine; 1% wetting agent; 5% stabilizer; and 84.62% water.

[0077] Example 9

[0078] A method for preparing a photoresist developer comprises the following steps: by mass percentage: 2.38% quaternary ammonium hydroxide; 1% dibasic acid; 1% polyol; 5% organic amine; 1% wetting agent; 5% stabilizer; and 84.62% water.

[0079] Example 10

[0080] A method for preparing a photoresist developer comprises the following steps: by mass percentage: 2.38% quaternary ammonium hydroxide; 1% dibasic acid; 5% polyol; 5% organic amine; 1% wetting agent; 5% stabilizer; and 80.62% water.

[0081] Test samples: The developer obtained in Examples 1-10 was used as the test sample, and a developer in a common ratio was used as the blank group.

[0082] Test method: Fill the tank (40 liters) of the developer with the blank groups of Examples 1-10 respectively, keep the temperature constant at 25°C, set the single-wafer dosage to 3loops, the exposure to 100-140mJ, FOCUS-2-2μm, PEB100-115°C, the developing time to 60 seconds, and conduct the test on the wafer after photolithography.

[0083] Test results: The test results of Examples 1-10 and the blank group are shown in Table 1. As can be seen from Table 1, Examples 1-10 can achieve a decrease in the level of aluminum etching and photoresist etching, but the development time increases at different rates. This indicates that excessive addition of dibasic acid and stabilizer will lead to increased development time or even incomplete development. The addition of dibasic acid, polyol, organic amine and stabilizer has a protective effect on aluminum etching and photoresist etching. Among them, the combination with more polyol and organic amine has a better effect on aluminum etching and photoresist etching without increasing the development time too much.

[0084] Table 1 Test results of Examples 1-10 and control samples

[0085]

[0086] It should be noted that, in this article, relational terms such as first and second, etc. are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Moreover, the terms "include", "comprise" or any other variants thereof are intended to cover non-exclusive inclusion, so that a process, method, article or device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, article or device.

[0087] It should be understood that the use of these embodiments is only for illustrating the present invention and is not intended to limit the protection scope of the present invention. In addition, it should also be understood that after reading the technical content of the present invention, those skilled in the art may make various changes, modifications and / or variations to the present invention, and the scope of the present invention is limited by the attached claims and their equivalents.

Claims

1. An anti-corrosion developer, characterized in that: The invention comprises the following raw materials: quaternary ammonium hydroxide, dibasic acid, organic amine, polyol, wetting agent, stabilizer and water.

2. The anti-corrosion developer according to claim 1, characterized in that: The pH value of the anti-corrosion developer is 13-14.

3. The anti-corrosion developer according to claim 1, characterized in that: The anti-corrosion developer also includes: an organic base and / or an organic acid.

4. The anti-corrosion developer according to claim 1, characterized in that: The anti-corrosion developer comprises the following components in percentage by weight: 2-3 wt% quaternary ammonium hydroxide; 0.1%-20 wt% dibasic acid; 0.1%-20 wt% organic amine; 0.1%-20 wt% polyol; 0.1%-20 wt% wetting agent; 0.1%-20 wt% stabilizer, and the balance is water.

5. The anti-corrosion developer according to claim 4, characterized in that: The quaternary ammonium hydroxide is selected from at least one of the compounds shown in Formula 1: In formula 1, R1, R2, R3, and R4 are the same or different and are independently selected from C1-C5 alkyl groups; the quaternary ammonium hydroxide is selected from one or more of tetramethylammonium hydroxide, tetraethylammonium hydroxide, tetrapropylammonium hydroxide, tetrabutylammonium hydroxide, tetrapentylammonium hydroxide, and tetrahexylammonium hydroxide; and the weight percentage of the quaternary ammonium hydroxide is 2-3wt%.

6. The anti-corrosion developer according to claim 4, characterized in that: The dibasic acid is selected from at least one of the compounds shown in Formula 2: In formula 2, R1 and R2 are the same or different and are independently selected from H or C1-C5 alkyl or hydroxyl or amino or halogen; the dibasic acid is selected from one or more of methylene diphosphonic acid, vinyl diphosphonic acid, propane diphosphonic acid, butane diphosphonic acid, pentane diphosphonic acid, aminomethylene diphosphonic acid, hydroxymethylene diphosphonic acid, hydroxyethylidene diphosphonic acid, chlorodronic acid, methylene disulfonic acid, ethane disulfonic acid, propane disulfonic acid, butane disulfonic acid, pentane disulfonic acid, 2-oxopropane-1,3-disulfonic acid, trithionic acid, oxalic acid, betaine acid, succinic acid, gum acid, adipic acid, syrup acid, suberic acid, azelaic acid, sebaceous acid, trans-azetidine-2,4-dicarboxylic acid, 2-phosphoethanolic acid, and phosphoenolpyruvic acid; the weight percentage of the dibasic acid is 0.1%-20wt%.

7. The anti-corrosion developer according to claim 4, characterized in that: The organic amine is selected from at least one of the compounds shown in Formula 3: In formula 3, R1, R2, and R3 are the same or different and are independently selected from hydrogen, C1-C3 alkyl or hydroxyl or carboxyl or silanol; the organic amine is selected from one or more of trimethylamine, trimethylolamine, triethylamine, triethanolamine, aminotriethylamide, cysteine, glutamine, aminoethylaminopropyltrimethoxysilane, and aminopropyltrimethoxysilane; and the weight percentage of the organic amine is 0.1%-20wt%.

8. The anti-corrosion developer according to claim 4, characterized in that: The polyol is selected from at least one of the compounds shown in Formula 4: The polyol is selected from one or more of glycol, glycerol, threitol, xylitol, mannose, mannitol, isomannite, mannitol, mannoheptitol, octyl glycol, mannobiose, mannotriose, and stachyose; the weight percentage of the polyol is 0.1%-20wt%.

9. The anti-corrosion developer according to claim 4, characterized in that: The wetting agent is selected from at least one of the compounds shown in Formula 5: In formula 5, R1 and R2 are the same or different and are independently selected from C1-C5 alkyl or hydroxyl or carboxyl or halogen; the wetting agent is selected from one or more of triethylene glycol, triethylene glycol monomethyl ether, triethylene glycol dimethyl ether, triethylene glycol diacetate, triethylene glycol monochlorohydrin, bromo-triethylene glycol-carboxylic acid, triethylene glycol bischloroformate, triethylene glycol monoisopropyl ether, triethylene glycol monobutyl ether, triethylene glycol butyl methyl ether, triethylene glycol mono-tert-butyl ether, triethylene glycol dimaleate, and triethylene glycol diacrylate; the weight percentage of the wetting agent is 0.1%-20wt%.

10. The anti-corrosion developer according to claim 4, characterized in that: The stabilizer is selected from at least one of the compounds shown in Formula 6: In formula 6, R1, R2, R3, and R4 are the same or different and are independently selected from C1-C5 alkyl or ether group or carbonyl group or ester group; the stabilizer is selected from one or more of dimethyl oxalate, diethyl oxalate, dipropyl oxalate, dibutyl oxalate, dipentyl oxalate, dimethyl betaine, diethyl betaine, dipropyl betaine, dibutyl betaine, dipentyl betaine, dimethyl succinate, diethyl succinate, dipropyl succinate, dibutyl succinate, dipentyl succinate, dimethyl gum, diethyl gum, dipropyl gum, dibutyl gum, dipentyl gum, dimethyl adipose, diethyl adipose, dipropyl adipose, dibutyl adipose, and dipentyl adipose; the weight percentage of the stabilizer is 0.1%-20wt%.

11. A method for preparing an anti-corrosion developer according to any one of claims 1 to 10, characterized in that: The preparation method can be prepared by uniformly mixing quaternary ammonium hydroxide, dibasic acid, organic amine, polyol, wetting agent, stabilizer and water.

12. Use of the anti-corrosion developer according to any one of claims 1 to 10, wherein the anti-corrosion developer is suitable for the field of photolithography.

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