Plasma generation equipment, HDP CVD equipment and film thickness optimization method

Abstract

The invention provides plasma generation equipment, HDP CVD (High Density Plasma Chemical Vapor Deposition) equipment and a film thickness optimization method. The plasma generating apparatus includes a top coil, a side coil, a shielding device, an electromagnet device, and a power source. The top coil is located above the plasma chamber and generates a first electromagnetic field; the side coil is arranged around the side surface of the plasma chamber to generate a second electromagnetic field; the shielding device covers the top coil, the side coil and the upper part of the plasma chamber; the electromagnet devices are symmetrically distributed on two sides of the periphery of the shielding device, and are electrified by the power supply to generate a third electromagnetic field; the power supply is switched on and switched off, and the magnitude and the direction of the current are adjustable, so that the third electromagnetic field is adjusted; and the film thickness is adjusted by a total electromagnetic field after the first electromagnetic field, the second electromagnetic field and the third electromagnetic field are superposed.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor manufacturing, and in particular to the field of semiconductor thin film deposition. Background Art

[0002] When developing a high-density plasma (HDP) process, it is necessary to optimize the film thickness distribution to meet the uniformity requirements by optimizing the RF power source (Source RF Power), adjusting the gas flow rate, and replacing the nozzle. However, after the process parameters are determined, the electromagnetic field distribution is basically fixed. If the film thickness distribution is eccentric, or there are abnormal high and low points, or the customer has more stringent requirements for the film thickness range, then the conventional machine adjustment methods (such as adjusting the flow rate of the reaction gas and changing the aperture) have little effect on the distribution of the magnetic field and it is difficult to optimize the film thickness. Summary of the invention

[0003] In order to accurately optimize the film thickness, the present invention provides a plasma generating device, a HDP CVD device (high-density plasma chemical vapor deposition device) and a film thickness optimization method. A plasma generating device.

[0004] The plasma generating device of the present invention comprises: a top coil, a side coil, a shielding device, an electromagnet device and a power supply.

[0005] The top coil is located above a plasma chamber and generates a first electromagnetic field.

[0006] The side coil is disposed around a side of the plasma chamber to generate a second electromagnetic field.

[0007] The shielding device covers the top coil, the side coils and an upper portion of the plasma chamber.

[0008] The electromagnet devices are symmetrically distributed on both sides of the periphery of the shielding device and are energized by the power supply to generate a third electromagnetic field.

[0009] The opening and closing of the power supply, the magnitude of the current and the direction are adjustable to adjust the third electromagnetic field; the film thickness is adjusted by the total electromagnetic field after the superposition of the first electromagnetic field, the second electromagnetic field and the third electromagnetic field.

[0010] In one embodiment, the electromagnet device has an even number of electromagnets, and each electromagnet is externally connected to one of the power sources.

[0011] In one embodiment, the power supply is a direct current power supply.

[0012] In one embodiment, the on or off of the current passing through each electromagnet in the electromagnet device, the directionality of the current passing through and the current magnitude are adjusted according to the film thickness distribution requirements, thereby adjusting the third electromagnetic field distribution, and further affecting the total electromagnetic field to adjust the film thickness to a preset value.

[0013] In one embodiment, when the film thickness distribution becomes abnormal, a forward current is applied to the power supply to generate a forward electromagnetic field, and then it is determined whether the film thickness improves toward the expected film thickness value. If it improves, the current direction is kept unchanged, and the current size is further adjusted to meet the expected film thickness value; if it does not improve, a reverse current is applied to the power supply to generate a negative electromagnetic field, and the current size is adjusted to meet the expected film thickness value.

[0014] In one embodiment, the plasma generating device is a high density plasma generating device.

[0015] In one embodiment, the magnetic induction intensity of the third electromagnetic field is calculated according to the following formula:

[0016]

[0017] in,

[0018] B is the magnetic induction intensity of the third electromagnetic field;

[0019] N is the number of turns of the electromagnet coil;

[0020] I is the current of the power supply;

[0021] U is the voltage of the power supply;

[0022] R is the winding resistance of the electromagnet;

[0023] δ is the air gap length;

[0024] μ0 is the magnetic permeability of vacuum.

[0025] The present invention also provides a high-density plasma chemical vapor deposition device, comprising a plasma chamber, a top coil, a side coil, a shielding device, an electromagnet device and a power supply.

[0026] The top coil is located above the plasma chamber and generates a first electromagnetic field.

[0027] The side coil is disposed around a side of the plasma chamber to generate a second electromagnetic field.

[0028] The shielding device covers the top coil, the side coils and an upper portion of the plasma chamber.

[0029] The electromagnet devices are symmetrically distributed on both sides of the periphery of the shielding device and are energized by the power supply to generate a third electromagnetic field.

[0030] The opening and closing of the power supply, the magnitude of the current and the direction are adjustable to adjust the third electromagnetic field; the film thickness is adjusted by the total electromagnetic field after the superposition of the first electromagnetic field, the second electromagnetic field and the third electromagnetic field.

[0031] In one embodiment, the electromagnet device has an even number of electromagnets, and each electromagnet is externally connected to one of the power sources.

[0032] In one embodiment, the power supply is a direct current power supply.

[0033] In one embodiment, the on or off of the current passing through each electromagnet in the electromagnet device, the directionality of the current passing through and the current magnitude are adjusted according to the film thickness distribution requirements, thereby adjusting the third electromagnetic field distribution, and further affecting the total electromagnetic field to adjust the film thickness to a preset value.

[0034] In one embodiment, when the film thickness distribution becomes abnormal, a forward current is applied to the power supply to generate a forward electromagnetic field, and then it is determined whether the film thickness improves toward the expected film thickness value. If it improves, the current direction is kept unchanged, and the current size is further adjusted to meet the expected film thickness value; if it does not improve, a reverse current is applied to the power supply to generate a negative electromagnetic field, and the current size is adjusted to meet the expected film thickness value.

[0035] In one embodiment, the plasma chamber is a high density plasma chamber.

[0036] In one embodiment, the magnetic induction intensity of the third electromagnetic field is calculated according to the following formula:

[0037]

[0038] in,

[0039] B is the magnetic induction intensity of the third electromagnetic field;

[0040] N is the number of turns of the electromagnet coil;

[0041] I is the current of the power supply;

[0042] U is the voltage of the power supply;

[0043] R is the winding resistance of the electromagnet;

[0044] δ is the air gap length;

[0045] μ0 is the magnetic permeability of vacuum.

[0046] The present invention also provides a method for optimizing film thickness using the aforementioned plasma generating device, the method comprising:

[0047] After measuring the abnormal film thickness distribution, a forward current is applied to generate a forward electromagnetic field;

[0048] Determine whether the film thickness is improving toward an expected film thickness value?

[0049] If it is improved, the current direction is kept unchanged, and the current magnitude is further adjusted so that the film thickness meets the expected film thickness value;

[0050] If there is no improvement, a reverse current is applied to generate a negative electromagnetic field, and the current is adjusted so that the film thickness meets the expected film thickness value.

[0051] The present invention can actively realize the precise adjustment of the film thickness distribution according to the existing film thickness distribution, solve the problems such as eccentric film thickness distribution and abnormal high points, and thus solve the difficulty of conventional machine adjustment. At the same time, it can also reduce the frequent opening of the cavity (by adjusting the nozzle to optimize the film thickness distribution), avoid the time-consuming and key components exposed to air caused by frequent opening of the cavity, and improve the stability and operation time of the machine. BRIEF DESCRIPTION OF THE DRAWINGS

[0052] The above invention content and the following specific embodiments of the present invention will be better understood when read in conjunction with the accompanying drawings. It should be noted that the accompanying drawings are only examples of the claimed invention. In the accompanying drawings, the same reference numerals represent the same or similar elements.

[0053] Figure 1 FIG. 4 is a schematic diagram of a HDP CVD device according to an embodiment of the present invention.

[0054] Figure 2A A simulation diagram of film thickness distribution before installing the electromagnet is shown.

[0055] Figure 2B A simulation diagram of film thickness distribution after installing electromagnet devices at the 3 o'clock and 9 o'clock directions according to an embodiment of the present invention is shown.

[0056] Figure 3A Shows the sputtering rate distribution before installing the electromagnet.

[0057] Figure 3B FIG. 1 shows a sputtering rate distribution diagram after installing an electromagnet according to an embodiment of the present invention.

[0058] Figure 3C A schematic diagram showing the change in sputtering rate after the magnet is installed according to an embodiment of the present invention is shown.

[0059] Figure 4A schematic diagram of a method for optimizing film thickness distribution according to an embodiment of the present invention is shown. DETAILED DESCRIPTION

[0060] The detailed features and advantages of the present invention are described in detail in the specific embodiments below, and the content is sufficient to enable any person skilled in the art to understand the technical content of the present invention and implement it accordingly, and according to the description, claims and drawings disclosed in this specification, those skilled in the art can easily understand the relevant purposes and advantages of the present invention. Although the description of the present invention will be introduced in conjunction with the preferred embodiment, this does not mean that the features of this invention are limited to this embodiment. On the contrary, the purpose of introducing the invention in conjunction with the embodiment is to cover other options or modifications that may be extended based on the claims of the present invention. In order to provide a deep understanding of the present invention, many specific details will be included in the following description. The present invention can also be implemented without using these details. In addition, in order to avoid confusion or blurring the focus of the present invention, some specific details will be omitted in the description.

[0061] In the description of the present invention, it should be noted that, unless otherwise clearly specified and limited, the terms "installed", "connected", and "connected" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection, or it can be indirectly connected through an intermediate medium, or it can be the internal communication of two components. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0062] In addition, the terms "upper", "lower", "left", "right", "top", "bottom", "horizontal" and "vertical" used in the following description should be understood as the directions shown in the paragraph and the related drawings. Such relative terms are only used for the convenience of description and do not mean that the device described therein must be manufactured or operated in a specific direction, and therefore should not be understood as limiting the present invention.

[0063] It is understood that although the terms "first", "second", "third", etc. may be used herein to describe various components, channels, components, regions, layers and / or parts, these components, channels, components, regions, layers and / or parts should not be limited by these terms, and these terms are only used to distinguish different components, channels, components, regions, layers and / or parts. In addition, the terms "first", "second", "third" are used for descriptive purposes only and cannot be understood as indicating or implying relative importance.

[0064] As shown in this application and claims, unless the context clearly indicates an exception, the words "a", "an", "an" and / or "the" do not refer to the singular and may also include the plural. Generally speaking, the terms "include" and "comprise" only indicate the inclusion of the steps and elements that have been clearly identified, and these steps and elements do not constitute an exclusive list. The method or device may also include other steps or elements.

[0065] In some embodiments, numbers describing the number of components and attributes are used. It should be understood that such numbers used in the description of the embodiments are modified by the modifiers "about", "approximately" or "substantially" in some examples. Unless otherwise specified, "about", "approximately" or "substantially" indicate that the numbers are allowed to vary by ±20%. Accordingly, in some embodiments, the numerical parameters used in the specification and claims are approximate values, which may change according to the required features of individual embodiments. In some embodiments, the numerical parameters should take into account the specified significant digits and adopt the general method of retaining digits. Although the numerical domains and parameters used to confirm the breadth of their range in some embodiments of the present application are approximate values, in specific embodiments, the setting of such numerical values ​​is as accurate as possible within the feasible range.

[0066] At the same time, the present application uses specific words to describe the embodiments of the present application. For example, "one embodiment", "an embodiment", and / or "some embodiments" refer to a certain feature, structure or characteristic related to at least one embodiment of the present application. Therefore, it should be emphasized and noted that "one embodiment" or "an embodiment" or "an alternative embodiment" mentioned twice or more in different positions in this specification does not necessarily refer to the same embodiment. In addition, some features, structures or characteristics in one or more embodiments of the present application can be appropriately combined.

[0067] Figure 1 Schematic diagram of a HDP CVD device according to an embodiment of the present invention is shown. The HDP CVD device includes an HDP chamber 101, a top coil 102, a side coil 103, a shielding device 104, an electromagnet device 105, and a power supply 106. The top coil 102, the side coil 103, the shielding device 104, the electromagnet device 105, and the power supply 106 constitute a plasma generating device.

[0068] The top coil 102 is located above the HDP chamber 101 to generate a first electromagnetic field. In one embodiment, the first electromagnetic field is adjustable.

[0069] The side coil 103 is disposed around the side of the HDP chamber 101 to improve the uniformity of ion distribution in the chamber and generate a second electromagnetic field. In one embodiment, the second electromagnetic field is adjustable.

[0070] A shielding device (shielding cover) 104 covers the top coil 102 , the side coil 103 , and the upper portion of the HDP chamber 101 .

[0071] The electromagnet devices 105 are symmetrically distributed on both sides of the shielding device 104 .

[0072] In one embodiment, the electromagnet device 105 has two electromagnets.

[0073] In one embodiment, the electromagnet device 105 includes an even number of electromagnets distributed symmetrically, such as 2, 4, 6 . . . n.

[0074] Each electromagnet is externally connected to a corresponding power source 106, wherein the current flowing therethrough is I, thereby generating a third electromagnetic field. The third electromagnetic field can be adjusted by changing the magnitude and direction of the current.

[0075] The total electromagnetic field is obtained by superposition of the first electromagnetic field, the second electromagnetic field and the third electromagnetic field, and the total electromagnetic field affects the film thickness distribution (deposition rate and sputtering rate).

[0076] In one embodiment, the power source 106 is a direct current power source.

[0077] In one embodiment, the on or off of the DC power supply, the magnitude of the current generated, and the direction of the current can be adjusted as needed. That is, the current has the function of writing the magnitude and direction of the current. For example, the switch, directionality, and current magnitude of a certain electromagnet can be determined according to the need to adjust the film thickness distribution, thereby adjusting the third electromagnetic field distribution and affecting the total electromagnetic field.

[0078] Specifically, when the film thickness distribution is measured to be abnormal, the power supply 106 applies a forward current to generate a forward electromagnetic field. Subsequently, it is determined whether the film thickness is improved toward an expected film thickness value. If improved, the current direction is kept unchanged, and the current magnitude is further adjusted to meet the expected film thickness value. If not improved, a reverse current is applied to generate a negative electromagnetic field, and the current magnitude is adjusted to meet the expected film thickness value.

[0079] It should be pointed out that the “forward current” and “reverse current” mentioned in this article are only to distinguish between two currents in opposite directions, and do not refer to a specific flow direction.

[0080] Specifically, the relationship between the magnetic induction intensity B of the third electromagnetic field and the current I of the power supply 106 is as follows:

[0081]

[0082] in,

[0083] N is the number of turns of the electromagnet coil;

[0084] I is the power supply current, in A;

[0085] U is the power supply voltage, in V;

[0086] R is the winding resistance, unit Ω;

[0087] δ is the air gap length, in m;

[0088] μ0 is the vacuum magnetic permeability, unit is Wb / A·m

[0089] The calculation formula of magnetic induction intensity B is as above, where N, δ, μ0 are fixed values, so B is proportional to I. If the difference between the film thickness thk at the point to be adjusted and the target value is By applying a current of 10A, a superimposed magnetic field is generated to affect the thickness of the target point. If the difference between the film thickness thk and the target value is reduced to The current direction is kept unchanged, and the current is increased to twice the current value through proportional conversion. The difference between the film thickness and the target value is confirmed again, thus forming a closed circuit.

[0090] Figure 2A A simulation diagram of the film thickness distribution without an electromagnet is shown, where the contour lines represent the magnetic flux density norm (G) and the arrows on the surface represent the magnetic flux density.

[0091] Figure 2B The film thickness distribution simulation diagram after installing the electromagnet device according to one embodiment of the present invention is shown, wherein the contour lines represent the magnetic flux density modulus (G), and the arrows on the surface represent the magnetic flux density. In this embodiment, the electromagnet is installed at the 3 o'clock and 9 o'clock directions, and the magnetic induction intensity Bb = 1000G. Figure 2A and Figure 2B , it can be seen that the film thickness distribution has shifted in the horizontal direction.

[0092] Figure 3A The sputtering rate distribution diagram before installing the electromagnet is shown, where the corresponding film thickness is Film thickness range

[0093]

[0094] Figure 3B The sputtering rate distribution diagram after installing the electromagnet according to one embodiment of the present invention is shown, wherein the corresponding film thickness is The film thickness range is In particular, Figure 3A 301 and Figure 3B 302 are schematic diagrams of sputtering rate without and with the addition of electromagnets.

[0095] Figure 3CA schematic diagram of the sputtering rate change after the magnet is installed according to an embodiment of the present invention is shown. As shown in the figure, the low point sputtering rate is significantly increased, so that the sputtering rate range is significantly improved, thereby meeting the customer's specifications.

[0096] Figure 4 A schematic diagram of a method for optimizing film thickness distribution according to an embodiment of the present invention is shown. The method comprises the following steps:

[0097] Step 401: Measure that the film thickness distribution is abnormal.

[0098] Step 402: Apply a forward current to generate a forward electromagnetic field.

[0099] Step 403: Determine whether the film thickness is improved toward an expected film thickness value. If improved, execute step 404; if not improved, execute step 405.

[0100] Step 404: If there is improvement, the current direction is kept unchanged, and the current magnitude is further adjusted to meet the expected film thickness.

[0101] Step 405: If there is no improvement, apply a reverse current to generate a negative electromagnetic field.

[0102] Step 406: Adjust the current to meet the expected film thickness.

[0103] It should be pointed out that the “forward current” and “reverse current” mentioned in this article are only to distinguish between two currents in opposite directions, and do not refer to a specific flow direction.

[0104] The present invention can actively realize the precise adjustment of the film thickness distribution according to the existing film thickness distribution, solve the problems such as eccentric film thickness distribution and abnormal high points, and thus solve the difficulty of conventional machine adjustment. At the same time, it can also reduce the frequent opening of the cavity (by adjusting the nozzle to optimize the film thickness distribution), avoid the time-consuming and key components exposed to air caused by frequent opening of the cavity, and improve the stability and operation time of the machine.

[0105] Those skilled in the art will appreciate that the various illustrative components, modules, blocks, units, circuits, systems, and steps described in conjunction with the embodiments disclosed herein may be implemented by hardware, software (including firmware, resident software, microcode, etc.), or a combination of the two. To clearly illustrate this interchangeability of hardware and software, various illustrative components, modules, blocks, units, circuits, systems, and steps are described above in general terms in terms of their functionality. Whether such functionality is implemented as hardware or software depends on the specific application and the design constraints imposed on the overall system. The technician may implement the described functionality in different ways for each specific application, but such implementation decisions should not be interpreted as resulting in a departure from the scope of the present invention.

[0106] Flowcharts are used in the present application to illustrate the operations or steps performed by the system according to the embodiments of the present application. It should be understood that the preceding or following operations or steps are not necessarily performed accurately in order. On the contrary, various operations or steps may be processed in reverse order or simultaneously. At the same time, other operations or steps may be added to these processes, or one or more operations or steps may be removed from these processes.

[0107] Unless explicitly stated in the claims, the order of the processing elements and sequences, the use of alphanumeric characters, or the use of other names described in the present application are not intended to limit the order of the processes and methods of the present application.

[0108] Furthermore, aspects of the present application may take the form of a computer product embodied in one or more computer-readable media including computer-readable program code.

[0109] A computer readable signal medium may include a propagated data signal containing computer program code, such as in baseband or as part of a carrier wave. The propagated signal may have a variety of forms, including electromagnetic, optical, etc., or a suitable combination. A computer readable signal medium may be any computer readable medium other than a computer readable storage medium, which may be connected to an instruction execution system, device or apparatus to communicate, propagate or transmit a program for use. The program code on the computer readable signal medium may be propagated through any suitable medium, including radio, cable, fiber optic cable, RF, or similar media, or any combination of the above media.

[0110] The computer program coding required for the operation of each part of the application can be written in any one or more programming languages, including object-oriented programming languages ​​such as Java, Scala, Smalltalk, Eiffel, JADE, Emerald, C++, C#, VB.NET, Python, etc., conventional procedural programming languages ​​such as C language, Visual Basic, Fortran 2003, Perl, COBOL 2002, PHP, ABAP, dynamic programming languages ​​such as Python, Ruby and Groovy, or other programming languages, etc. The program coding can be run completely on the user's computer, or run on the user's computer as an independent software package, or run partly on the user's computer and partly on the remote computer, or run completely on the remote computer or server. In the latter case, the remote computer can be connected to the user's computer through any network form, such as a local area network (LAN) or a wide area network (WAN), or connected to an external computer (e.g., via the Internet), or in a cloud computing environment, or used as a service such as software as a service (SaaS).

[0111] Those skilled in the art will appreciate that information, signals, and data may be represented using any of a variety of different technologies and techniques. For example, data, instructions, commands, information, signals, bits, symbols, and chips cited throughout the above description may be represented by voltage, current, electromagnetic waves, magnetic fields or magnetic particles, optical fields or optical particles, or any combination thereof.

[0112] The steps of the method or algorithm described in conjunction with the embodiments disclosed herein may be directly embodied in hardware, in a software module executed by a processor, or in a combination of the two. The software module may reside in a RAM memory, a flash memory, a ROM memory, an EPROM memory, an EEPROM memory, a register, a hard disk, a removable disk, a CD-ROM, or any other form of storage medium known in the art. An exemplary storage medium is coupled to a processor so that the processor can read and write information from / to the storage medium. In an alternative, a storage medium may be integrated into a processor. In an alternative, a processor and a storage medium may reside in a user terminal as discrete components.

[0113] In one or more exemplary embodiments, the functions described may be implemented in hardware, software, firmware, or any combination thereof. If implemented as a computer program product in software, each function may be stored on or transmitted by a computer-readable medium as one or more instructions or codes. Computer-readable media include both computer storage media and communication media, including any medium that facilitates the transfer of a computer program from one place to another. Storage media may be any available medium that can be accessed by a computer. As an example and not limitation, such a computer-readable medium may include RAM, ROM, EEPROM, CD-ROM or other optical disk storage, disk storage or other magnetic storage device, or any other medium that can be used to carry or store the desired program code in the form of an instruction or data structure and can be accessed by a computer. Any connection is also properly referred to as a computer-readable medium. For example, if the software is transmitted from a website, a server, or other remote source using a coaxial cable, a fiber optic cable, a twisted pair, a digital subscriber line (DSL), or wireless technologies such as infrared, radio, and microwaves, the coaxial cable, fiber optic cable, twisted pair, DSL, or wireless technologies such as infrared, radio, and microwaves are included in the definition of the medium. Disk and disc as used herein include compact disc (CD), laser disc, optical disc, digital versatile disc (DVD), floppy disk and Blu-ray disc, wherein disk often reproduces data magnetically, while disc reproduces data optically with lasers. Combinations of the above should also be included within the scope of computer-readable media.

[0114] The terms and expressions used above are for descriptive purposes only, and the present invention should not be limited to these terms and expressions. The use of these terms and expressions does not mean to exclude any equivalent features of the illustrations and descriptions (or parts thereof), and it should be recognized that various modifications that may exist should also be included in the scope of the claims. Other modifications, changes and substitutions may also exist. Accordingly, the claims should be deemed to cover all such equivalents.

[0115] Similarly, it should be noted that in order to simplify the description of the disclosure of this application and thus facilitate the understanding of one or more embodiments of the invention, in the foregoing description of the embodiments of this application, multiple features are sometimes combined into one embodiment, drawing or description thereof. However, this disclosure method does not mean that the features required by the object of this application are more than the features mentioned in the claims.

[0116] Similarly, it should be pointed out that although the present invention has been described with reference to the current specific embodiments, ordinary technicians in this technical field should realize that the above embodiments are only used to illustrate the present invention, and various equivalent changes or substitutions may be made without departing from the spirit of the present invention. Therefore, as long as the changes and modifications to the above embodiments are within the scope of the essential spirit of the present invention, they will fall within the scope of the claims of this application.

Claims

1. A plasma generating device, characterized in that: include: A top coil, a side coil, a shielding device, an electromagnet device, and a power supply; The top coil is located above a plasma chamber and generates a first electromagnetic field; The side coil is arranged around the side of the plasma chamber to generate a second electromagnetic field; The shielding device covers the top coil, the side coil and the upper part of the plasma chamber; The electromagnet devices are symmetrically distributed on both sides of the periphery of the shielding device and are energized by the power supply to generate a third electromagnetic field; The on and off of the power supply, the magnitude and direction of the current are adjustable to adjust the third electromagnetic field; the film thickness is adjusted by the total electromagnetic field after the first electromagnetic field, the second electromagnetic field and the third electromagnetic field are superimposed.

2. The plasma generating device according to claim 1, characterized in that The electromagnet device has an even number of electromagnets, and each electromagnet is externally connected to one of the power sources.

3. The plasma generating device according to claim 1, characterized in that: The power supply is a direct current power supply.

4. The plasma generating device according to claim 1, characterized in that: The on or off of the current passing through each electromagnet in the electromagnet device, the directionality of the current passing through and the current magnitude are adjusted according to the film thickness distribution requirements, thereby adjusting the third electromagnetic field distribution, and further affecting the total electromagnetic field to adjust the film thickness to a preset value.

5. The plasma generating device according to claim 1, characterized in that: When the film thickness distribution becomes abnormal, a forward current is applied to the power supply to generate a forward electromagnetic field, and then it is determined whether the film thickness improves in the direction of the expected film thickness value. If it improves, the current direction is kept unchanged, and the current size is further adjusted to meet the expected film thickness value; if it does not improve, a reverse current is applied to the power supply to generate a negative electromagnetic field, and the current size is adjusted to meet the expected film thickness value.

6. The plasma generating device according to claim 1, characterized in that: The plasma generating device is a high-density plasma generating device.

7. The plasma generating device according to claim 1, characterized in that: The magnetic induction intensity of the third electromagnetic field is calculated according to the following formula: in, B is the magnetic induction intensity of the third electromagnetic field; N is the number of turns of the electromagnet coil; I is the current of the power supply; U is the voltage of the power supply; R is the winding resistance of the electromagnet; δ is the air gap length; μ0 is the magnetic permeability of vacuum.

8. A high-density plasma chemical vapor deposition device, characterized in that: include: a plasma chamber, a top coil, a side coil, a shielding device, an electromagnet device, and a power supply; The top coil is located above the plasma chamber and generates a first electromagnetic field; The side coil is arranged around the side of the plasma chamber to generate a second electromagnetic field; The shielding device covers the top coil, the side coil and the upper part of the plasma chamber; The electromagnet devices are symmetrically distributed on both sides of the periphery of the shielding device and are energized by the power supply to generate a third electromagnetic field; The on and off of the power supply, the magnitude and direction of the current are adjustable to adjust the third electromagnetic field; the film thickness is adjusted by the total electromagnetic field after the first electromagnetic field, the second electromagnetic field and the third electromagnetic field are superimposed.

9. The high-density plasma chemical vapor deposition equipment according to claim 8, characterized in that: The electromagnet device has an even number of electromagnets, and each electromagnet is externally connected to one of the power sources.

10. The high-density plasma chemical vapor deposition equipment according to claim 8, characterized in that: The power supply is a direct current power supply.

11. The high-density plasma chemical vapor deposition equipment according to claim 8, characterized in that: The switch of each electromagnet in the electromagnet device, the directionality of the current passed and the current magnitude are adjusted according to the film thickness distribution requirements, thereby adjusting the third electromagnetic field distribution, and further affecting the total electromagnetic field to adjust the film thickness to a preset value.

12. The high-density plasma chemical vapor deposition equipment according to claim 8, characterized in that: When the film thickness distribution becomes abnormal, a forward current is applied to the power supply to generate a forward electromagnetic field, and then it is determined whether the film thickness improves in the direction of the expected film thickness value. If it improves, the current direction is kept unchanged, and the current size is further adjusted to meet the expected film thickness value; if it does not improve, a reverse current is applied to the power supply to generate a negative electromagnetic field, and the current size is adjusted to meet the expected film thickness value.

13. The high density plasma chemical vapor deposition equipment according to claim 8, characterized in that: The plasma chamber is a high-density plasma chamber.

14. The high density plasma chemical vapor deposition equipment according to claim 8, characterized in that: The magnetic induction intensity of the third electromagnetic field is calculated according to the following formula: in, B is the magnetic induction intensity of the third electromagnetic field; N is the number of turns of the electromagnet coil; I is the current of the power supply; U is the voltage of the power supply; R is the winding resistance of the electromagnet; δ is the air gap length; μ0 is the magnetic permeability of vacuum.

15. A film thickness optimization method using the plasma generating device according to claim 1, characterized in that: The method comprises: After measuring the abnormal film thickness distribution, a forward current is applied to generate a forward electromagnetic field; Determine whether the film thickness is improving toward an expected film thickness value? If it is improved, the current direction is kept unchanged, and the current magnitude is further adjusted so that the film thickness meets the expected film thickness value; If there is no improvement, a reverse current is applied to generate a negative electromagnetic field, and the current is adjusted so that the film thickness meets the expected film thickness value.

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