Image sensor having nanophotonic lens array and electronic device including the same

Abstract

There is provided an image sensor including a sensor substrate including a plurality of pixels configured to sense light, and a nano-photon lens array configured to separate incident light based on color and converge the separated incident light onto the plurality of pixels, wherein the nanophotonic lens array includes a plurality of supercells arranged two-dimensionally, and includes a first cell pattern and a second cell pattern, the first cell pattern and the second cell pattern respectively including a plurality of pixel corresponding regions corresponding to the plurality of pixels, and wherein each of the plurality of pixel corresponding regions includes a plurality of nanostructures, the plurality of nanostructures are configured to separate incident light based on color and converge the separated incident light onto the plurality of pixels, and wherein a cross-sectional size or cross-sectional shape of the first nanostructure is different from a cross-sectional size or cross-sectional shape of the second nanostructure.

Description

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS

[0002] This application is based on and claims the benefit of priority from Korean Patent Application No. 10-2023-0100043 filed in the Korean Intellectual Property Office on July 31, 2023, the disclosure of which is incorporated herein in its entirety by reference. Technical Field

[0003] Embodiments of the present disclosure relate to an image sensor including a nanophotonic lens array and an electronic device including the image sensor. Background Art

[0004] Image sensors typically use color filters to sense the color of incident light. However, color filters may have a low light utilization efficiency because the color filters absorb light of colors other than the desired light color. For example, in the case of using a red, green, and blue (RGB) color filter, only 1 / 3 of the incident light is transmitted, and the other part of the incident light, that is, 2 / 3 of the incident light, is absorbed. Therefore, the light utilization efficiency is only about 33%. Therefore, in a color display device or a color image sensor, most of the light loss occurs in the color filter. Summary of the invention

[0005] One or more example embodiments provide an image sensor including a nanophotonic lens array and having improved optical efficiency, and an electronic device including the image sensor.

[0006] One or more example embodiments also provide a nanophotonic lens array configured to reduce pattern artifacts in an image that occur at boundary portions where a cross-sectional size and / or shape of a nanostructure varies.

[0007] Additional aspects will be set forth in part in the description which follows and, in part, will be apparent from the description, or may be learned by practice of the embodiments presented in the disclosure.

[0008] According to an aspect of an example embodiment, there is provided an image sensor including a sensor substrate including a plurality of pixels configured to sense light, and a nanophotonic lens array configured to separate incident light based on color and to converge the separated incident light onto the plurality of pixels, wherein the nanophotonic lens array includes a plurality of super cells periodically arranged two-dimensionally, the plurality of super cells including a first cell pattern and a second cell pattern, and the first cell pattern and the second cell pattern respectively include a plurality of pixel corresponding regions corresponding to the plurality of pixels, wherein each of the plurality of pixel corresponding regions includes a plurality of nanostructures configured to separate incident light based on color and to converge the separated incident light onto the plurality of pixels, and wherein a cross-sectional size or a cross-sectional shape of a first nanostructure among the plurality of nanostructures included in the first cell pattern is different from a cross-sectional size or a cross-sectional shape of a second nanostructure among the plurality of nanostructures included in the second cell pattern at a position corresponding to the first nanostructure.

[0009] A first cross-sectional size of a first nanostructure included in the first unit pattern may be different from a second cross-sectional size of a second nanostructure included in the second unit pattern.

[0010] The first cross-sectional size and the second cross-sectional size may be integer multiples of the minimum unit size.

[0011] The nanophotonic lens array may include a first portion, a second portion, and a third portion between the first portion and the second portion, and the first portion may include a first unit pattern, the second portion may include a second unit pattern, and the third portion may include a plurality of super units.

[0012] In each of the plurality of super cells, the first unit pattern and the second unit pattern may be in an N×M array, wherein at least one of N and M is an integer greater than or equal to 2.

[0013] The nanophotonic lens array may further include a fourth portion between the third portion and the second portion, wherein the plurality of super cells may include a plurality of first super cells periodically two-dimensionally arranged in the third portion and a plurality of second super cells periodically two-dimensionally arranged in the fourth portion, and wherein a ratio between a first cell pattern and a second cell pattern included in each of the plurality of first super cells may be different from a ratio between the first cell pattern and the second cell pattern included in each of the plurality of second super cells.

[0014] The first portion, the second portion, the third portion, and the fourth portion may be arranged as concentric circles.

[0015] In each of the plurality of first super cells and the plurality of second super cells, the first unit pattern and the second unit pattern may be arranged in a 2×2 array, and wherein each of the plurality of first super cells may include three first unit patterns and one second unit pattern, and each of the plurality of second super cells may include two first unit patterns and two second unit patterns.

[0016] The plurality of first super cells included in the third portion may include a first array and a second array, wherein an arrangement of the first unit pattern and the second unit pattern in the first array may be different from an arrangement of the first unit pattern and the second unit pattern in the second array, and the plurality of second super cells included in the fourth portion may include a third array and a fourth array, wherein an arrangement of the first unit pattern and the second unit pattern in the third array may be different from an arrangement of the first unit pattern and the second unit pattern in the fourth array.

[0017] The nanophotonic lens array may further include a fifth portion between the fourth portion and the second portion, wherein the plurality of super cells may include a plurality of third super cells periodically and two-dimensionally arranged in the fifth portion, and wherein a ratio between the first unit pattern and the second unit pattern in each of the plurality of third super cells may be different from a ratio between the first unit pattern and the second unit pattern in each of the plurality of first super cells and each of the plurality of second super cells.

[0018] The ratio of the first unit pattern may be sequentially decreased and the ratio of the second unit pattern may be sequentially increased from the first portion to the third portion, the fourth portion, the fifth portion, and the second portion.

[0019] In each of the plurality of first super cells, the plurality of second super cells, and the plurality of third super cells, the first unit pattern and the second unit pattern may be arranged in a 2×2 array, and wherein each of the plurality of first super cells may include three first unit patterns and one second unit pattern, each of the plurality of second super cells may include two first unit patterns and two second unit patterns, and each of the plurality of third super cells may include one first unit pattern and three second unit patterns.

[0020] The multiple super cells in at least one of the third part, the fourth part and the fifth part may respectively include multiple cell patterns arranged in an N1×M1 array, and the multiple super cells in at least one part different from the third part, the fourth part and the fifth part may respectively include multiple cell patterns arranged in an N2×M2 array, wherein N1 and N2 are positive integers different from each other or M1 and M2 are positive integers different from each other.

[0021] The first unit pattern and the second unit pattern may include a third nanostructure having a cross-sectional size or a cross-sectional shape equal to or different from that of the first nanostructure and the second nanostructure.

[0022] The nanophotonic lens array may further include a fourth nanostructure having a cross-sectional size or a cross-sectional shape equal to or different from the cross-sectional size or the cross-sectional shape of the first and second nanostructures and different from the cross-sectional size or the cross-sectional shape of the third nanostructure.

[0023] The first cross-sectional dimension of the first nanostructure may be different from the second cross-sectional dimension of the second nanostructure, and the third cross-sectional dimension of the third nanostructure may be equal to or different from the first cross-sectional dimension and the second cross-sectional dimension, and the fourth cross-sectional dimension of the fourth nanostructure may be equal to or different from the first cross-sectional dimension and the second cross-sectional dimension and different from the third cross-sectional dimension.

[0024] The nanophotonic lens array may further include third and fourth unit patterns, the third unit patterns respectively including the first nanostructure and the fourth nanostructure, and the fourth unit patterns respectively including the second nanostructure and the fourth nanostructure.

[0025] The nanophotonic lens array may further include a plurality of super units, in which unit patterns selected from the first unit pattern, the second unit pattern, the third unit pattern, and the fourth unit pattern may be arranged in an N×M array, where at least one of N and M is an integer greater than or equal to 2.

[0026] The multiple pixels may include a plurality of unit pixel patterns respectively including a first pixel, a second pixel, a third pixel and a fourth pixel, the multiple pixel corresponding areas included in each of the first unit pattern and the second unit pattern may include a first pixel corresponding area corresponding to the first pixel, a second pixel corresponding area corresponding to the second pixel, a third pixel corresponding area corresponding to the third pixel and a fourth pixel corresponding area corresponding to the fourth pixel, and the cross-sectional size, cross-sectional shape and height of each of the multiple nanostructures and the arrangement period and arrangement shape of the multiple nanostructures may be determined so that, in the incident light incident into the first pixel corresponding area, the second pixel corresponding area, the third pixel corresponding area and the fourth pixel corresponding area, light of a first band is separated and converged onto the first pixel, light of a second band different from the first band is separated and converged onto the second pixel and the third pixel, and light of a third band different from the first band and the second band is separated and converged onto the fourth pixel.

[0027] According to another aspect of example embodiments, there is provided an electronic device including a lens assembly configured to form an optical image of an object, an image sensor configured to convert the optical image formed by the lens assembly into an electrical signal, and a processor configured to process a signal generated by the image sensor, wherein the image sensor may include a sensor substrate and a nanophotonic lens array, the sensor substrate including a plurality of pixels configured to sense light, the nanophotonic lens array configured to separate incident light based on color and to focus the separated incident light onto the plurality of pixels, wherein the nanophotonic lens array includes a plurality of super cells periodically arranged two-dimensionally, the plurality of super cells including a first cell pattern and a second cell pattern, and the first cell pattern and the second cell pattern respectively include a plurality of pixel corresponding regions corresponding to the plurality of pixels, wherein each of the plurality of pixel corresponding regions includes a plurality of nanostructures configured to separate incident light based on color and to focus the separated incident light onto the plurality of pixels, and wherein a cross-sectional size or a cross-sectional shape of a first nanostructure among the plurality of nanostructures included in the first cell pattern may be different from a cross-sectional size or a cross-sectional shape of a second nanostructure among the plurality of nanostructures included in the second cell pattern at a position corresponding to the first nanostructure. BRIEF DESCRIPTION OF THE DRAWINGS

[0028] The above and other aspects, features and advantages of example embodiments of the present disclosure will become more apparent from the following description in conjunction with the accompanying drawings, in which:

[0029] Figure 1 is a schematic block diagram of an image sensor according to an embodiment;

[0030] Figure 2A , Figure 2B and Figure 2C is a diagram showing examples of various pixel arrangements in a pixel array of an image sensor;

[0031] Figure 3A and Figure 3B is a cross-sectional view schematically illustrating a structure of a pixel array in an image sensor according to example embodiments;

[0032] Figure 4 It is schematically shown Figure 3A and Figure 3B A plan view of the structure of a sensor substrate in a pixel array;

[0033] Figure 5 It is schematically shown Figure 3A and Figure 3B A plan view of the structure of a color filter layer;

[0034] Figure 6 It is shown Figure 3A and Figure 3BA plan view of an example of a unit pattern in a nanophotonic lens array;

[0035] Figure 7 is to show that blue and green light pass through Figure 6 Figure 2 shows an example of phase distribution after a nanophotonic lens array;

[0036] Figure 8 It shows that green and red light pass through Figure 6 Figure 2 shows an example of phase distribution after a nanophotonic lens array;

[0037] Fig. 9 is a diagram showing an example of arrangement of unit patterns of nanostructures having different cross-sectional sizes in a nanophotonic lens array;

[0038] Fig.10 and Fig.11 is a plan view showing an example of a unit pattern of a nanostructure having different cross-sectional sizes;

[0039] Fig.12 It is shown Fig. 9 A plan view of an example of a super unit structure including a plurality of unit patterns in a nanophotonic lens array;

[0040] Fig.13A , Fig. 13B , Fig. 13C and Fig.13D 1 is a diagram showing various arrangements of a plurality of unit patterns in a first super unit of a nanophotonic lens array;

[0041] Fig.14A , Fig. 14B , Fig. 14C , Fig.14D , Fig.14E and Fig.14F is a diagram showing examples of various arrangements of a plurality of unit patterns in a second super unit of a nanophotonic lens array;

[0042] Fig.15A , Fig. 15B , Fig. 15C and Fig.15D is a diagram showing examples of various arrangements of a plurality of unit patterns in a third super unit of a nanophotonic lens array;

[0043] Fig.16A , Fig. 16B , Fig. 16C , Fig.16D , Fig.16E , Fig.16F , Figure 16G and Fig.16H is a diagram showing examples of various arrangements of a plurality of unit patterns in a super unit of a nanophotonic lens array according to another embodiment;

[0044] Fig.17 is a diagram showing an example of the distribution of the cross-sectional size of the nanostructures in the entire area of ​​the nanophotonic lens array;

[0045] Fig.18 It is shown Fig.17 A magnified image of the A1 portion of the nanophotonic lens array;

[0046] Fig.19 is a diagram showing an example of an image generated by an image sensor according to a related example;

[0047] Fig. 20 is a diagram showing an example of an image generated by an image sensor according to an example embodiment;

[0048] Fig.21 and Fig. 22 is a diagram showing examples of various arrangements of a plurality of unit patterns in a super unit of a nanophotonic lens array when the cross-sectional size of the nanostructure is independently changed in a plurality of lenses;

[0049] Fig.23 is a block diagram of an electronic device including an image sensor according to an embodiment;

[0050] Fig.24 It is schematically shown Fig.23 Block diagram of the camera module;

[0051] Fig.25 is a block diagram of an electronic device including a multi-camera module; and

[0052] Fig.26 yes Fig.25 Detailed block diagram of a multi-camera module in an electronic device. DETAILED DESCRIPTION

[0053] Now with reference to the embodiment in detail, examples of the embodiments are shown in the accompanying drawings, wherein similar reference numerals throughout the accompanying drawings represent similar elements. In this regard, exemplary embodiments may have different forms and should not be construed as being limited to the description set forth herein. Therefore, exemplary embodiments are described below only by reference to the accompanying drawings to explain various aspects. As used herein, the term "and / or" includes any and all combinations of one or more of the related listed items. Statements such as "at least one of ......" modify the entire element list when after the element list, rather than modifying the individual elements in the list. For example, the statement "at least one of a, b, and c" should be understood to include only a, only b, only c, both a and b, both a and c, both b and c, or all of a, b, and c.

[0054] Hereinafter, an image sensor including a nanophotonic lens array and an electronic device including the image sensor will be described in detail with reference to the accompanying drawings. The embodiments of the present disclosure are capable of various modifications and may be implemented in many different forms. In the accompanying drawings, like reference numerals denote like components, and the sizes of the components in the accompanying drawings may be exaggerated for ease of explanation.

[0055] When a layer, film, region, or panel is referred to as being “on” another element, it can be directly on the upper / lower / left / right of the other layer or substrate, or intervening layers may also be present.

[0056] It should be understood that although the terms "first", "second", etc. can be used in this article to describe various components, these components should not be limited by these terms. These terms are only used to distinguish components from each other. These terms do not limit the materials or structures of the components to be different from each other.

[0057] Expressions in the singular include plural expressions unless clearly different meanings are given in the context. It should also be understood that when a part is said to "include" another component, the part may not exclude the other component but may further include another component unless otherwise indicated in the context.

[0058] In addition, terms such as "unit", "module" and the like provided herein mean a unit that performs a function or an operation and may be implemented by hardware, software, or a combination of hardware and software.

[0059] The use of the term "above" and similar indicative terms may correspond to both the singular and the plural.

[0060] Likewise, the steps of all methods described herein can be performed in any appropriate order, unless otherwise noted herein or the context clearly indicates otherwise. In addition, the use of all exemplary terms (e.g., etc.) is only to describe the technical spirit in detail, and the scope of rights is not limited by these terms unless the context is limited by the claims.

[0061] Figure 1 is a schematic block diagram of an image sensor according to example embodiments. Figure 1 , the image sensor 1000 may include a pixel array 1100, a timing controller 1010, a row decoder 1020, and an output circuit 1030. The image sensor 1000 may be a charge coupled device (CCD) image sensor or a complementary metal oxide semiconductor (CMOS) image sensor.

[0062] The pixel array 1100 includes pixels arranged in two dimensions in a plurality of rows and columns. The row decoder 1020 selects one of the rows in the pixel array 1100 in response to a row address signal output from the timing controller 1010. The output circuit 1030 outputs a photosensitive signal in a row unit from a plurality of pixels arranged in the selected row. To this end, the output circuit 1030 may include a column decoder and an analog-to-digital converter (ADC). For example, the output circuit 1030 may include a plurality of ADCs of columns respectively arranged between the column decoder and the pixel array 1100, or an ADC arranged at the output end of the column decoder. The timing controller 1010, the row decoder 1020, and the output circuit 1030 may be implemented as one chip or in a separate chip. A processor for processing an image signal output from the output circuit 1030 may be implemented as one chip with the timing controller 1010, the row decoder 1020, and the output circuit 1030.

[0063] The pixel array 1100 may include a plurality of pixels that sense light of different wavelengths. The pixel arrangement may be implemented in various ways. For example, FIG. 2A to FIG. 2C Various pixel arrangements in pixel array 1100 of image sensor 1000 are shown.

[0064] FIG. 2A to FIG. 2C 1 shows a Bayer pattern commonly used in image sensor 1000. Figure 2A , a unit pattern includes four quadrant areas, and the first to fourth quadrants may be green pixels G, blue pixels B, green pixels G, and red pixels R, respectively. The unit pattern may be repeatedly arranged two-dimensionally in a first direction (X direction) and a second direction (Y direction). For example, in a unit pattern of a 2×2 array, two green pixels G are arranged in one diagonal direction, and one blue pixel B and one red pixel R are arranged in another diagonal direction. In the entire arrangement of pixels, a plurality of blue pixels B and a plurality of green pixels G are alternately arranged in a first row in the first direction, and a plurality of green pixels G and a plurality of red pixels R are alternately arranged in a second row in the first direction and repeatedly arranged in the second direction.

[0065] The pixel array 1100 may be arranged in various arrangement patterns other than the Bayer pattern. Figure 2B , a red-yellow-blue (RYB) arrangement can be used in which a yellow pixel Y is used instead of a green pixel G in the Bayer pattern. Figure 2C, a cyan-magenta-yellow (CMY) arrangement in which a cyan pixel C, a magenta pixel M, and two yellow pixels Y form a unit pattern may be used. An RGBW arrangement in which a green pixel G, a red pixel R, a blue pixel B, and a white pixel W form a unit pattern may be used. In addition to the above examples, the pixels in the pixel array 1100 may be arranged in various ways according to the color characteristics of the image sensor 1000. Hereinafter, the pixel array 1100 of the image sensor 1000 will be described as having a Bayer pattern, but the operating principle may be applied to other pixel arrangement patterns other than the Bayer pattern.

[0066] Hereinafter, for convenience of description, an example in which the pixel array 1100 has a Bayer pattern structure will be described as an example.

[0067] Figure 3A and Figure 3B is a cross-sectional view schematically illustrating a structure of a pixel array 1100 in an image sensor 1000 according to example embodiments. Figure 3A 1 shows a cross-sectional view of the pixel array 1100 taken along a first direction (X direction), and Figure 3B The pixel array 1100 is shown in the second direction (Y direction) Figure 3A Cross-sectional views taken along the first direction (X direction) at different positions.

[0068] refer to Figure 3A and Figure 3B The pixel array 1100 may include a sensor substrate 110 , a color filter layer 120 disposed on the sensor substrate 110 , a planarization layer 130 that is transparent and disposed on the color filter layer 120 , and a nanophotonic lens array 140 disposed on the planarization layer 130 .

[0069] Figure 4 It is schematically shown Figure 3A and Figure 3B FIG. 1 is a plan view of the structure of the sensor substrate 110 in the pixel array 1100. Figure 4, the sensor substrate 110 may include a plurality of pixels that sense incident light. For example, the sensor substrate 110 may include a first pixel 111, a second pixel 112, a third pixel 113, and a fourth pixel 114 that convert incident light into an electrical signal and generate an image signal. The first pixel 111, the second pixel 112, the third pixel 113, and the fourth pixel 114 may form a unit pixel pattern. For example, the first pixel 111 may be a blue pixel that senses blue light, the second pixel 112 and the third pixel 113 may be green pixels that sense green light, and the fourth pixel 114 may be a red pixel that senses red light. In the sensor substrate 110, a plurality of unit pixel patterns including the first pixel 111, the second pixel 112, the third pixel 113, and the fourth pixel 114 may be periodically repeated and two-dimensionally arranged in a first direction (X direction) and a second direction (Y direction).

[0070] Figure 3A , Figure 3B and Figure 4 Only one unit Bayer pattern including four pixels is shown as an example, but the pixel array 1100 may include a plurality of Bayer patterns arranged in two dimensions. For example, a plurality of first pixels 111 and a plurality of second pixels 112 may be alternately arranged in a first direction, and a plurality of third pixels 113 and a plurality of fourth pixels 114 may be alternately arranged in the first direction on cross sections differently positioned in a second direction perpendicular to the first direction. Similarly, a plurality of first pixels 111 and a plurality of fourth pixels 114 may be arranged in a first diagonal direction, and a plurality of second pixels 112 and a plurality of third pixels 113 may be arranged in a second diagonal direction intersecting the first diagonal direction.

[0071] In an example, each of the first to fourth pixels 111, 112, 113, and 114 may include one photosensitive unit. For example, each of the first to fourth pixels 111, 112, 113, and 114 may include one photodiode.

[0072] In another example, each of the first to fourth pixels 111, 112, 113, and 114 may include a plurality of photosensitive units that independently sense incident light. In this case, each of the first to fourth pixels 111, 112, 113, and 114 may include a plurality of photodiodes. For example, each of the first to fourth pixels 111, 112, 113, and 114 may include a first photosensitive unit C1, a second photosensitive unit C2, a third photosensitive unit C3, and a fourth photosensitive unit C4. The first to fourth photosensitive units C1, C2, C3, and C4 may be two-dimensionally arranged in the first direction and the second direction. For example, in each of the first to fourth pixels 111, 112, 113, and 114, the first to fourth photosensitive units C1, C2, C3, and C4 may be arranged in a 2×2 array.

[0073] Figure 4 An example is shown in which each of the first to fourth pixels 111, 112, 113, and 114 includes four photosensitive units, but four or more independent photosensitive units separated from each other may be grouped and arranged in two dimensions. For example, each of the first to fourth pixels 111, 112, 113, and 114 may include a plurality of independent photosensitive units grouped and arranged in a 3×3 array or a 4×4 array. Hereinafter, for ease of description, an example will be described in which each of the first to fourth pixels 111, 112, 113, and 114 includes photosensitive units arranged in a 2×2 array.

[0074] When each of the first to fourth pixels 111, 112, 113, and 114 includes a plurality of photosensitive cells, an automatic focus signal may be obtained according to the difference between output signals from adjacent photosensitive cells. For example, an automatic focus signal in the first direction may be generated according to the difference between output signals from the first photosensitive cell C1 and the second photosensitive cell C2, the difference between output signals from the third photosensitive cell C3 and the fourth photosensitive cell C4, or the difference between the sum of output signals from the first photosensitive cell C1 and the third photosensitive cell C3 and the sum of output signals from the second photosensitive cell C2 and the fourth photosensitive cell C4. Similarly, an automatic focus signal in the second direction may be generated according to the difference between output signals from the first photosensitive cell C1 and the third photosensitive cell C3, the difference between output signals from the second photosensitive cell C2 and the fourth photosensitive cell C4, or the difference between the sum of output signals from the first photosensitive cell C1 and the second photosensitive cell C2 and the sum of output signals from the third photosensitive cell C3 and the fourth photosensitive cell C4.

[0075] A general image signal may be obtained by adding the output signals from the first to fourth photosensitive cells C1, C2, C3, and C4. For example, a blue image signal may be generated by adding the output signals from the first to fourth photosensitive cells C1, C2, C3, and C4 of the first pixel 111, a first green image signal may be generated by adding the output signals from the first to fourth photosensitive cells C1, C2, C3, and C4 of the second pixel 112, a second green image signal may be generated by adding the output signals from the first to fourth photosensitive cells C1, C2, C3, and C4 of the third pixel 113, and a red image signal may be generated by adding the output signals from the first to fourth photosensitive cells C1, C2, C3, and C4 of the fourth pixel 114.

[0076] Likewise, each of the first to fourth pixels 111, 112, 113, and 114 may include an isolation portion DTI that electrically isolates a plurality of photosensitive units from each other. The isolation portion DTI may have, for example, a deep trench isolation structure. The deep trench may be filled with, for example, air or an electrically insulating material. The isolation portion DTI may extend in the first direction and the second direction to divide each of the first to fourth pixels 111, 112, 113, and 114 into four. The first to fourth photosensitive units C1, C2, C3, and C4 in each of the first to fourth pixels 111, 112, 113, and 114 may be isolated from each other by the isolation portion DTI. The isolation portion DTI extending in the first direction and the isolation portion DTI extending in the second direction may intersect each other at the center of each of the first to fourth pixels 111, 112, 113, and 114.

[0077] Likewise, the isolation portion DTI may be disposed in the first direction and the second direction between adjacent pixels among the first to fourth pixels 111, 112, 113, and 114. Therefore, the first to fourth pixels 111, 112, 113, and 114 may be isolated from each other due to the isolation portion DTI. The isolation portion DTI extending in the first direction and the isolation portion DTI extending in the second direction may intersect each other at the center of the unit Bayer pattern including the first to fourth pixels 111, 112, 113, and 114.

[0078] Figure 5 It is schematically shown Figure 3A and Figure 3B FIG. 1 is a plan view of the structure of the color filter layer 120. Figure 5 , the color filter layer 120 may include a plurality of color filters disposed between the sensor substrate 110 and the nanophotonic lens array 140 to transmit light of a specific wavelength band and absorb light of another wavelength band. For example, the color filter layer 120 may include a first color filter 121 that transmits light of a first wavelength band and absorbs light of wavelength bands other than the first wavelength band, a second color filter 122 and a third color filter 123 that transmit light of a second wavelength band different from the first wavelength band and absorb light of wavelength bands other than the second wavelength band, and a fourth color filter 124 that transmits light of a third wavelength band different from the first and second wavelength bands and absorbs light of wavelength bands other than the third wavelength band. Figure 5 Only an example of a unit Bayer pattern is shown, but a plurality of first color filters 121 and a plurality of second color filters 122 may be alternately arranged in the first direction, and a plurality of third color filters 123 and a plurality of fourth color filters 124 may be alternately arranged in the first direction on cross sections at different positions in a second direction perpendicular to the first direction.

[0079] The first color filter 121 may be disposed to face the first pixel 111 in the third direction (Z direction), the second color filter 122 may be disposed to face the second pixel 112 in the third direction, the third color filter 123 may be disposed to face the third pixel 113 in the third direction, and the fourth color filter 124 may be disposed to face the fourth pixel 114 in the third direction. Accordingly, the first pixel 111 may sense light of a first wavelength band passing through the first color filter 121 corresponding thereto. The second pixel 112 senses light of a second wavelength band passing through the second color filter 122 corresponding thereto, and the third pixel 113 senses light of a second wavelength band passing through the third color filter 123 corresponding thereto. The fourth pixel 114 may sense light of a third wavelength band passing through the fourth color filter 124 corresponding thereto. For example, the first color filter 121 may be a blue color filter that transmits blue light, the second color filter 122 and the third color filter 123 may be green color filters that transmit green light, and the fourth color filter 124 may be a red color filter that transmits red light.

[0080] Figure 5 The dotted lines shown in represent the isolation between the photosensitive units in the first to fourth pixels 111, 112, 113, and 114. Figure 5 As shown, the first to fourth color filters 121, 122, 123, and 124 may be disposed to face all photosensitive cells in the first to fourth pixels 111, 112, 113, and 114 respectively corresponding thereto in the third direction. For example, the first color filter 121 may cover and face all photosensitive cells in the first pixel 111, the second color filter 122 may cover and face all photosensitive cells in the second pixel 112, the third color filter 123 may cover and face all photosensitive cells in the third pixel 113, and the fourth color filter 124 may cover and face all photosensitive cells in the fourth pixel 114.

[0081] The first to fourth color filters 121, 122, 123, and 124 in the color filter layer 120 may be formed of, for example, an organic polymer material. For example, the first to fourth color filters 121, 122, 123, and 124 may include a colorant, a binder resin, a polymer photoresist, and the like. The first color filter 121 may be an organic color filter including a blue organic dye or a blue organic pigment as a colorant, the second color filter 122 and the third color filter 123 may be an organic color filter including a green organic dye or a green organic pigment as a colorant, and the fourth color filter 124 may be an organic color filter including a red organic dye or a red organic pigment as a colorant. Although for convenience, Figure 3A , Figure 3B and Figure 5Although not shown in the drawings, the color filter layer 120 may further include a black matrix disposed at boundaries between the first to fourth color filters 121, 122, 123, and 124. The black matrix may include, for example, carbon black.

[0082] Return to reference Figure 3A and Figure 3B , the planarization layer 130 disposed between the color filter layer 120 and the nanophotonic lens array 140 may have a flat surface to form the nanophotonic lens array 140 thereon. The planarization layer 130 may include an organic polymer material, which may be stacked on the color filter layer 120 formed of an organic material and may more easily form a flat surface. The organic polymer material forming the planarization layer 130 may be transparent to visible light. For example, the planarization layer 130 may include at least one organic polymer material from epoxy resin, polyimide, polycarbonate, polyacrylate, and polymethyl methacrylate (PMMA). The planarization layer 130 may be formed on the color filter layer 120 by, for example, a spin coating method, and may have a flat upper surface by heat treatment.

[0083] The nanophotonic lens array 140 may be disposed on the planarization layer 130 . Figure 3A and Figure 3B It is shown that the nanophotonic lens array 140 is directly disposed on the planarization layer 130, but in the process of forming the nanophotonic lens array 140, a protective layer formed of an organic polymer material for preventing the planarization layer 130 from being damaged may be disposed on the planarization layer 130, and then, the nanophotonic lens array 140 may be disposed on the protective layer. In addition, in order to protect the planarization layer 130 while forming the nanophotonic lens array 140, an etching stop layer may also be disposed between the planarization layer 130 and the nanophotonic lens array 140.

[0084] The nanophotonic lens array 140 can be formed to perform color separation on the incident light. For example, the nanophotonic lens array 140 can separate the light of the first band (e.g., blue light), the light of the second band (e.g., green light), and the light of the third band (e.g., red light) from the incident light, and allow the separated light to travel in different channels. Similarly, the nanophotonic lens array 140 can also be configured to be used as a lens to converge the separated blue light, green light, and red light onto a pixel. Specifically, the nanophotonic lens array 140 can be configured to converge the blue light in the incident light onto the first pixel 111, the green light onto the second pixel 112 and the third pixel 113, and the red light onto the fourth pixel 114.

[0085] In order to converge light, the nanophotonic lens array 140 may include a plurality of nanostructures NP periodically arranged according to a certain rule. In addition, the nanophotonic lens array 140 may further include a dielectric layer DL filled between the plurality of nanostructures NP. In order for the nanophotonic lens array 140 to perform the above functions, the plurality of nanostructures NP of the nanophotonic lens array 140 may be formed differently.

[0086] Figure 6 It is shown Figure 3A and Figure 3B FIG. 1 is a plan view of an example of a unit pattern in the nanophotonic lens array 140 .

[0087] refer to Figure 6 , the nanophotonic lens array 140 may include a first pixel corresponding region 141 corresponding to the first pixel 111, a second pixel corresponding region 142 corresponding to the second pixel 112, a third pixel corresponding region 143 corresponding to the third pixel 113, and a fourth pixel corresponding region 144 corresponding to the fourth pixel 114. The first pixel corresponding region 141 may be arranged to face the first pixel 111 in the third direction, the second pixel corresponding region 142 may be arranged to face the second pixel 112 in the third direction, the third pixel corresponding region 143 may be arranged to face the third pixel 113 in the third direction, and the fourth pixel corresponding region 144 may be arranged to face the fourth pixel 114 in the third direction. Although Figure 6 Only one unit pattern is shown as an example, but a plurality of first pixel corresponding regions 141 and a plurality of second pixel corresponding regions 142 may be alternately arranged in the first direction, and a plurality of third pixel corresponding regions 143 and a plurality of fourth pixel corresponding regions 144 may be alternately arranged in the first direction on cross sections at different positions in a second direction perpendicular to the first direction. For example, the nanophotonic lens array 140 may include a plurality of unit patterns periodically and two-dimensionally arranged in the first direction and the second direction. The pattern period or lattice constant of the plurality of unit patterns in the nanophotonic lens array 140 may be equal to the pattern period or lattice constant of the plurality of unit pixel patterns in the sensor substrate 110.

[0088] The nanophotonic lens array 140 may include a plurality of nanostructures NP disposed in a first pixel corresponding region 141, a second pixel corresponding region 142, a third pixel corresponding region 143, and a fourth pixel corresponding region 144 to perform color separation on the incident light and converge the separated light. The plurality of nanostructures NP may be disposed so that the phase of the light transmitted through the nanophotonic lens array 140 changes according to the position on the nanophotonic lens array 140. The phase distribution of the transmitted light achieved by the nanophotonic lens array 140 may be determined according to the cross-sectional size (e.g., width or diameter), cross-sectional shape, and height of each nanostructure NP, and the arrangement period (or spacing) and arrangement type of the plurality of nanostructures NP. Similarly, the behavior of the light passing through the nanophotonic lens array 140 may be determined according to the phase distribution of the transmitted light. For example, the plurality of nanostructures NP may be disposed to form a phase distribution to allow the light transmitted through the nanophotonic lens array 140 to be separated and converged according to the wavelength.

[0089] The nanostructure NP may have a size smaller than the wavelength of visible light. The nanostructure NP may have a size smaller than, for example, the wavelength of blue light. For example, the cross-sectional width (or diameter) of the nanostructure NP in the horizontal direction may be less than 400nm, 300nm, or 200nm. The height of the nanostructure NP in the vertical direction may be from about 500nm to about 1500nm, and may be greater than the cross-sectional width of the nanostructure NP.

[0090] The nanostructured NP may include a material having a relatively high refractive index and a relatively low absorptivity in the visible light band compared to the surrounding material. For example, the nanostructured NP may include c-Si, p-Si, a-Si, and III-V compound semiconductors (gallium phosphide (GaP), gallium nitride (GaN), gallium arsenide (GaAs), etc.), silicon carbide (SiC), titanium oxide (TiO 2 ), silicon nitride (SiN 3 )、ZnS、ZnSe、Silicon Nitride 3 N 4 ) and / or a combination thereof. The periphery of the nanostructure NP may be filled with a dielectric layer DL having a relatively lower refractive index than the nanostructure NP and having a relatively lower absorptivity in the visible light band. For example, the dielectric layer DL may be filled with siloxane-based spin-on glass (SOG), silicon oxide (SiO 2 ),Si 3 N 4 、Alumina (Al 2 O 3 ), air, etc.

[0091] The refractive index of the nanostructure NP can be about 2.0 or greater relative to light of about 630nm wavelength, and the refractive index of the dielectric layer DL can be about 1.0 to about 2.0 or less relative to light of about 630nm wavelength. Similarly, the difference between the refractive index of the nanostructure NP and the refractive index of the dielectric layer DL can be about 0.5 or greater. The nanostructure NP having a refractive index difference with the refractive index of the peripheral material can change the phase of the light passing through the nanostructure NP. This is caused by the phase delay caused by the sub-wavelength shape size of the nanostructure NP, and the degree of phase delay can be determined by the detailed shape size and arrangement shape of the nanostructure NP.

[0092] exist Figure 6 In the example shown, nanostructures NP having different cross-sectional sizes may be arranged on the central portions of the first, second, third, and fourth pixel corresponding regions 141, 142, 143, and 144, respectively. For example, in the first pixel corresponding region 141, four nanostructures NP1 having a maximum diameter d1 may be arranged in a 2×2 array at the central portion of the first pixel corresponding region 141. A plurality of nanostructures NP having a diameter smaller than that of the nanostructure NP1 may be arranged two-dimensionally around the nanostructure NP1 at the central portion of the first pixel corresponding region 141. In the case of the fourth pixel corresponding region 144, four nanostructures NP4 may be arranged in a 2×2 array at the central portion of the fourth pixel corresponding region 144. The diameters d4 in the respective four nanostructures NP4 arranged at the central portion of the fourth pixel corresponding region 144 may be equal to each other and may be smaller than the diameter d1 of the nanostructure NP1 arranged at the central portion of the first pixel corresponding region 141. A plurality of nanostructures NP having a diameter smaller than that of the four nanostructures NP4 may be arranged two-dimensionally around the four nanostructures NP4 arranged at the central portion of the fourth pixel corresponding region 144.

[0093] In the second pixel corresponding region 142 and the third pixel corresponding region 143, the four nanostructures NP2 and NP3 may be arranged in a 2×2 array at the central portions of the second pixel corresponding region 142 and the third pixel corresponding region 143. The diameters d2 and d3 of the four nanostructures NP2 and NP3 arranged at the respective central portions of the second pixel corresponding region 142 and the third pixel corresponding region 143 may be equal to each other and may be smaller than the diameter d4 of the nanostructure NP4 arranged at the central portion of the fourth pixel corresponding region 144. A plurality of nanostructures NP having diameters smaller than the diameters of the four nanostructures NP2 and NP3 may be two-dimensionally arranged around the four nanostructures NP2 and NP3 arranged at the central portions of the second pixel corresponding region 142 and the third pixel corresponding region 143. The arrangement of the nanostructure NP in the second pixel corresponding region 142 may be rotated at an angle of 90 degrees relative to the arrangement of the nanostructure NP in the third pixel corresponding region 143.

[0094] Figure 6 An example of the configuration of the nanophotonic lens array 140 is shown, and the nanophotonic lens array 140 may be formed as follows: Figure 6 Various shapes other than the examples shown. Figure 6 , the nanostructure NP is shown as having a cylindrical shape, but the cross-sectional shape of the nanostructure NP is not limited thereto. For example, depending on the design of the nanophotonic lens array 140, the nanostructure NP may be formed into a columnar shape having various cross-sectional shapes, such as a rectangle, a triangle, a cross, or an ellipse. When the cross-sectional shape of the nanostructure NP is a polygon or an ellipse, the cross-sectional size of the nanostructure NP may be defined as the maximum width of the nanostructure NP. Therefore, the cross-sectional size of the nanostructure NP represents the diameter when the cross-sectional shape of the nanostructure NP is a circle, and represents the maximum width of the nanostructure NP when the cross-sectional shape of the nanostructure NP is a polygon or an ellipse.

[0095] Figure 7 is to show that blue and green light pass through Figure 6 FIG. 1 is an example of a phase distribution after the nanophotonic lens array 140. Figure 7 , the blue light passing through the nanophotonic lens array 140 may have a blue light phase distribution PPB that is maximum at the center of the first pixel corresponding area 141 and decreases away from the center of the first pixel corresponding area 141. Specifically, at a position immediately after passing through the nanophotonic lens array 140, that is, on the lower surface of the nanophotonic lens array 140, the phase of the blue light is maximum at the center of the first pixel corresponding area 141, and may decrease on a concentric circle away from the center of the first pixel corresponding area 141.

[0096] Likewise, the green light passing through the nanophotonic lens array 140 may have a first green light phase distribution PPG1, which is maximum at the center of the second pixel corresponding region 142 and decreases away from the center of the second pixel corresponding region 142. For example, at a position immediately after passing through the nanophotonic lens array 140, that is, on the lower surface of the nanophotonic lens array 140, the phase of the green light is maximum at the center of the second pixel corresponding region 142 and may decrease on a concentric circle away from the center of the second pixel corresponding region 142.

[0097] Then, from the incident light incident on the first pixel corresponding area 141 and the incident light incident on the second pixel corresponding area 142, the third pixel corresponding area 143 and the fourth pixel corresponding area 144 around the first pixel corresponding area 141, blue light can be converged onto the first pixel 111 through the nanophotonic lens array 140. Similarly, from the incident light incident on the second pixel corresponding area 142 and the incident light incident on the first pixel corresponding area 141 and the fourth pixel corresponding area 144 around the second pixel corresponding area 142, green light can be converged onto the second pixel 112 through the nanophotonic lens array 140.

[0098] Figure 8 It shows that red and green light pass through Figure 6 FIG. 1 is an example of a phase distribution after the nanophotonic lens array 140. Figure 8 , the green light passing through the nanophotonic lens array 140 may have a second green light phase distribution PPG2, which is maximum at the center of the third pixel corresponding area 143 and decreases away from the center of the third pixel corresponding area 143. In addition to the second green light phase distribution PPG2 having a maximum phase at the center of the third pixel corresponding area 143, the description about the first green light phase distribution PPG1 may also be applied to the second green light phase distribution PPG2.

[0099] Likewise, the red light passing through the nanophotonic lens array 140 may have a red light phase distribution PPR that is maximum at the center of the fourth pixel corresponding region 144 and decreases away from the center of the fourth pixel corresponding region 144. Specifically, at a position immediately after passing through the nanophotonic lens array 140, the phase of the red light is maximum at the center of the fourth pixel corresponding region 144 and decreases on a concentric circle away from the center of the fourth pixel corresponding region 144.

[0100] Then, from among the incident light incident on the third pixel corresponding region 143 and the incident light incident on the first pixel corresponding region 141 and the fourth pixel corresponding region 144 around the third pixel corresponding region 143, green light may be converged onto the third pixel 113 through the nanophotonic lens array 140. Similarly, from among the incident light incident on the fourth pixel corresponding region 144 and the incident light incident on the first pixel corresponding region 141, the second pixel corresponding region 142, and the third pixel corresponding region 143 around the fourth pixel corresponding region, red light may be converged onto the fourth pixel 114 through the nanophotonic lens array 140.

[0101] According to example embodiments, since the above-described nanophotonic lens array 140 can separate incident light by wavelength and converge the separated light without absorbing or blocking the incident light, the light utilization efficiency of the image sensor can be improved. Also, since the incident light is color-separated to a considerable extent by the nanophotonic lens array 140, even when the color filter layer 120 is used, the absorption loss due to the color filter layer 120 can be low. Also, since the nanophotonic lens array 140 and the color filter layer 120 are used together, the color purity can be improved.

[0102] The chief ray angle (CRA) of the incident light may vary according to the position on the image sensor 1000. For example, in the center of the image sensor 1000, the incident light is incident almost perpendicular to the surface of the image sensor 1000, while at the edge of the image sensor 1000, the incident light may be incident slightly obliquely. Considering the CRA, the nanophotonic lens array 140 may be configured so that a relatively uniform sensitivity may be obtained over the entire area of ​​the image sensor 1000. According to another example embodiment, the nanophotonic lens array 140 may be configured to compensate for degradation characteristics that vary according to the position on the image sensor 1000, such as color shading, sensitivity differences of green light incident on the second pixel 112 and the third pixel 113, etc. For example, according to an example embodiment, the cross-sectional size of at least one nanostructure among the nanostructures NP may be designed to vary according to the position of the nanostructure NP on the image sensor 1000 or the nanophotonic lens array 140 or the position on the image sensor 1000. For example, a unit pattern including the first to fourth pixel corresponding regions 141 to 144 of the nanophotonic lens array 140 may include nanostructures NP having different cross-sectional sizes according to positions on the image sensor 1000 or the nanophotonic lens array 140 .

[0103] The nanophotonic lens array 140 can be manufactured by depositing a dielectric layer DL on the planarization layer 130, forming a cylindrical hole through the dielectric layer DL by etching the dielectric layer DL, and filling the material of the nanostructure NP in the hole. In this case, due to reasons such as the accuracy of a patterning device including an exposure device or manufacturing costs, the cross-sectional size of the nanostructure NP may have a discontinuous discrete value. For example, the cross-sectional size of the nanostructure NP may be implemented as an integer multiple of the minimum unit. For example, when it is assumed that the minimum unit of the cross-sectional size of the nanostructure NP is 1nm, the cross-sectional size of the smallest nanostructure NP larger than the nanostructure NP with a cross-sectional size of 150nm may be 151nm, and the cross-sectional size of the largest nanostructure NP smaller than the nanostructure NP with a cross-sectional size of 150nm may be 149nm. Likewise, when the minimum unit of the cross-sectional size of the nanostructure NP is assumed to be 2 nm, the cross-sectional size of the smallest nanostructure NP larger than the nanostructure NP having a cross-sectional size of 150 nm may be 152 nm, and the cross-sectional size of the largest nanostructure NP smaller than the nanostructure NP having a cross-sectional size of 150 nm may be 148 nm. However, the embodiment is not limited thereto.

[0104] In this case, a nanostructure NP having a cross-sectional size between the minimum units may not be directly implemented. In the above example, when the minimum unit of the cross-sectional size of the nanostructure NP is 1 nm, a nanostructure NP having a cross-sectional size of, for example, 149.5 nm may not be directly implemented. Similarly, when the minimum unit of the cross-sectional size of the nanostructure NP is 2 nm, a nanostructure NP having a cross-sectional size of 151 nm may not be directly implemented. According to example embodiments, in order to obtain the same effect as realizing a nanostructure NP having a cross-sectional size that cannot be directly implemented due to resolution limitations or manufacturing costs of a device, a plurality of unit patterns of the nanophotonic lens array 140 including nanostructure NPs having different cross-sectional sizes may be arranged in combination.

[0105] Fig. 9 1 is a diagram showing an example of arrangement of unit patterns of nanostructures having different cross-sectional sizes in the nanophotonic lens array 140. Fig. 9, the nanophotonic lens array 140 may include a first portion R1, a second portion R2, a third portion R3 between the first portion R1 and the second portion R2, a fourth portion R4 between the third portion R3 and the second portion R2, and a fifth portion R5 between the fourth portion R4 and the second portion R2. Only a plurality of first unit patterns 140a may be arranged in the first portion R1. Only a plurality of second unit patterns 140b may be arranged in the second portion R2. In the first unit pattern 140a and the second unit pattern 140b, the cross-sectional size or cross-sectional shape of at least the nanostructures located at relatively corresponding positions among the plurality of nanostructures arranged therein may have different cross-sectional sizes or cross-sectional shapes. For example, among the plurality of nanostructures in the first unit pattern 140a, at least one first nanostructure may have a different cross-sectional size or shape than the second nanostructure at a position corresponding to the first nanostructure among the plurality of nanostructures in the second unit pattern 140b.

[0106] Fig.10 and Fig.11 is a plan view showing an example of a unit pattern of a nanostructure having different cross-sectional sizes. Specifically, Fig.10 shows the arrangement of the nanostructure NP in a first unit pattern 140a, and Fig.11 FIG. 1 shows the arrangement of the nanostructure NP in a second unit pattern 140 b. Fig.10 and Fig.11 , the overall arrangement types of the nanostructures NP in the first unit pattern 140a and the second unit pattern 140b may be identical to each other. The four first nanostructures NP4a arranged at the central portion of the fourth pixel corresponding region 144 in the first unit pattern 140a and the four second nanostructures NP4b arranged at the central portion of the fourth pixel corresponding region 144 in the second unit pattern 140b may have cross-sectional sizes different from each other. In addition to the cross-sectional sizes of the four first nanostructures NP4a and the second nanostructures NP4b arranged at the central portion of the fourth pixel corresponding region 144, the nanostructures NP at the corresponding positions in the first unit pattern 140a and the second unit pattern 140b may have the same cross-sectional size. For example, in the first unit pattern 140a and the second unit pattern 140b, the cross-sectional sizes of the four first nanostructures NP4a and the second nanostructures NP4b arranged at the fourth pixel corresponding region 144 are different, but other components may be identical to each other.

[0107] For example, the four first nanostructures NP4a arranged at the center portion of the fourth pixel corresponding region 144 of the first unit pattern 140a may each have a first cross-sectional size nδ, and the four second nanostructures NP4b arranged at the center portion of the fourth pixel corresponding region 144 in the second unit pattern 140b may each have a second cross-sectional size (n+1)δ different from the first cross-sectional size. Here, n represents a positive integer, and δ represents the minimum unit of the cross-sectional size of the nanostructure NP. Therefore, in the first portion R1 of the nanophotonic lens array 140, the four first nanostructures NP4a arranged at the center portion of the fourth pixel corresponding region 144 may have a first cross-sectional size nδ. Similarly, in the second portion R2 of the nanophotonic lens array 140, the four second nanostructures NP4b arranged at the center portion of the fourth pixel corresponding region 144 may have a second cross-sectional size (n+1)δ.

[0108] Fig.10 and Fig.11 It is shown that the cross-sectional sizes of the four first nanostructures NP4a and the second nanostructure NP4b arranged at the central portion of the fourth pixel corresponding region 144 in the first unit pattern 140a and the second unit pattern 140b are different from each other, but one or more embodiments are not limited thereto, and the cross-sectional sizes or shapes of the nanostructures at different positions may be different from each other. Hereinafter, for the convenience of description, the case where the cross-sectional sizes of the four first nanostructures NP4a and the second nanostructure NP4b arranged at the central portion of the fourth pixel corresponding region 144 are different from each other is described.

[0109] In the third part R3, the fourth part R4, and the fifth part R5 between the first part R1 and the second part R2, a plurality of first unit patterns 140a and a plurality of second unit patterns 140b may be arranged in combination. Similarly, in the third part R3, the fourth part R4, and the fifth part R5, the number of the first unit patterns 140a and the number of the second unit patterns 140b may be different. For example, in the third part R3 adjacent to the first part R1, the first unit pattern 140a may be more than the second unit pattern 140b; in the fifth part R5 adjacent to the second part R2, the second unit pattern 140b may be more than the first unit pattern 140a; and in the fourth part R4 between the third part R3 and the fifth part R5, the number of the first unit pattern 140a may be equal to the number of the second unit pattern 140b. Therefore, from the first part R1 to the third part R3, the fourth part R4, the fifth part R5, and the second part R2, the number or ratio of the first unit pattern 140a may gradually decrease, and the number or ratio of the second unit pattern 140b may gradually increase.

[0110] In order to more uniformly maintain the ratio between the first unit pattern 140a and the second unit pattern 140b throughout the third portion R3, the third portion R3 may include a plurality of first super cells 150a including the first unit pattern 140a and the second unit pattern 140b. For example, each of the plurality of first super cells 150a may include three first unit patterns 140a and one second unit pattern 140b arranged in a 2×2 array. Because the plurality of first super cells 150a are periodically and two-dimensionally arranged in the third portion R3, the ratio between the first unit pattern 140a and the second unit pattern 140b may be consistent at any position in the third portion R3. In this case, the average cross-sectional size of the four nanostructures arranged at the central portion of the fourth pixel corresponding region 144 of the entire unit pattern in the third portion R3 may be (n+0.25)δ. For example, the third portion R3 may provide the same optical effect as the case where the cross-sectional size of the four nanostructures arranged at the central portion of the fourth pixel corresponding region 144 is (n+0.25)δ.

[0111] Likewise, the fourth portion R4 may include a plurality of second super cells 150b including the same number of first unit patterns 140a and second unit patterns 140b. Therefore, a ratio between the first unit pattern 140a and the second unit pattern 140b within each of the plurality of second super cells 150b may be different from a ratio between the first unit pattern 140a and the second unit pattern 140b within each of the plurality of first super cells 150a. Fig.12 It is shown Fig. 9 FIG. 1 is a plan view of an example of a super unit structure including a plurality of unit patterns in the nanophotonic lens array 140. Specifically, Fig.12 An example of a second super cell 150b arranged in the fourth section R4 is shown. Fig.12 , each of the plurality of second super cells 150b may include two first unit patterns 140a and two second unit patterns 140b arranged in a 2×2 array. For example, the first unit pattern 140a may be arranged in the second quadrant and the fourth quadrant, and the second unit pattern 140b may be arranged in the first quadrant and the third quadrant, but one or more embodiments are not limited thereto. Because the plurality of second super cells 150b are periodically and two-dimensionally arranged in the fourth portion R4, the ratio between the first unit pattern 140a and the second unit pattern 140b may be consistent at any position in the fourth portion R4.

[0112] The second super unit 150b includes four fourth pixel corresponding regions 144, and the four first nanostructures NP4a arranged at the central portion of the fourth pixel corresponding region 144 in each of the two first unit patterns 140a have a first cross-sectional size nδ, and the four second nanostructures NP4b arranged at the central portion of the fourth pixel corresponding region 144 in each of the two second unit patterns 140b may have a second cross-sectional size (n+1)δ. In this case, the average cross-sectional size of the four nanostructures arranged at the central portion of the fourth pixel corresponding region 144 of the entire unit pattern in the fourth portion R4 may be (n+0.5)δ. For example, the fourth portion R4 may provide the same optical effect as the case where the cross-sectional size of the four nanostructures arranged at the central portion of the fourth pixel corresponding region 144 is (n+0.5)δ.

[0113] The fifth portion R5 may include a plurality of third super cells 150c including a first unit pattern 140a and a second unit pattern 140b. For example, each of the plurality of third super cells 150c may include one first unit pattern 140a and three second unit patterns 140b arranged in a 2×2 array. Therefore, the ratio between the first unit pattern 140a and the second unit pattern 140b within each of the plurality of third super cells 150c may be different from the ratio between the first unit pattern 140a and the second unit pattern 140b within each of the plurality of first super cells 150a and each of the plurality of second super cells 150b. Because the plurality of third super cells 150c are periodically and two-dimensionally arranged in the fifth portion R5, the ratio between the first unit pattern 140a and the second unit pattern 140b may be consistent at any position in the fifth portion R5. In this case, the average cross-sectional size of the four nanostructures arranged at the central portion of the fourth pixel corresponding region 144 of the entire unit pattern in the fifth portion R5 may be (n+0.75)δ. For example, the fifth portion R5 may provide the same optical effect as a case where the cross-sectional size of four nanostructures arranged at the central portion of the fourth pixel corresponding region 144 is (n+0.75)δ.

[0114] In the third part R3, the fourth part R4 and the fifth part R5, the average cross-sectional dimensions of the four nanostructures arranged at the central part of the fourth pixel corresponding area 144, namely (n+0.25)δ, (n+0.5)δ and (n+0.75)δ, are cross-sectional dimensions that may not be directly realized due to the limitation of device resolution or manufacturing cost. As described above, by mixing and arranging the first unit pattern 140a and the second unit pattern 140b having different cross-sectional dimensions in a certain ratio, the same effect as the case where the nanostructure NP having a cross-sectional dimension that may not be directly realized due to the limitation of device resolution or manufacturing cost is realized can be obtained. Similarly, by arranging the third part R3, the fourth part R4 and the fifth part R5 in which the first unit pattern 140a and the second unit pattern 140b are mixed between the first part R1 including only a plurality of first unit patterns 140a and the second part R2 including only a plurality of second unit patterns 140b, the discontinuity between the first part R1 and the second part R2 caused by the discretized cross-sectional dimensions nδ and (n+1)δ can be reduced. Specifically, the average cross-sectional size of the nanostructure gradually increases or decreases from the first portion R1 to the third portion R3, the fourth portion R4, the fifth portion R5 and the second portion R2, thereby preventing or reducing the degradation of image quality caused by the boundary between the first portion R1 and the second portion R2.

[0115] Fig. 9 It is shown that the positions of the first unit pattern 140a and the second unit pattern 140b in the first super cell 150a in the third section R3 are the same as each other, the positions of the first unit pattern 140a and the second unit pattern 140b in the second super cell 150b in the fourth section R4 are the same as each other, and the positions of the first unit pattern 140a and the second unit pattern 140b in the third super cell 150c in the fifth section R5 are the same as each other. For example, Fig. 9 It is shown that the second unit pattern 140b is arranged in the first quadrant in each first super cell 150a of the third portion R3, the first unit pattern 140a is arranged in the second and fourth quadrants, and the second unit pattern 140b is arranged in the first and third quadrants in each second super cell 150b of the fourth portion R4, and the first unit pattern 140a is arranged in the first quadrant in each third super cell 150c of the fifth portion R5. However, one or more embodiments are not limited thereto, that is, a plurality of first super cells 150a, a plurality of second super cells 150b, and a plurality of third super cells 150c having first unit patterns 140a and second unit patterns 140b having different positions may be arranged in the third portion R3, the fourth portion R4, and the fifth portion R5, respectively.

[0116] FIG. 13A to FIG. 13D1 is a diagram showing various arrangements of a plurality of unit patterns in the first super unit 150a of the nanophotonic lens array 140. Fig.13A As shown, the first super unit 150a may include a first array in which three first unit patterns 140a are arranged in the first, second and fourth quadrants, and the second unit pattern 140b may be arranged in the third quadrant. Fig. 13B As shown, the first super unit 150a may include a second array in which three first unit patterns 140a are arranged in the first, second, and third quadrants, and the second unit pattern 140b may be arranged in the fourth quadrant. However, one or more embodiments are not limited thereto. Fig. 13C As shown, the first super cell 150a may include a third array in which three first unit patterns 140a are arranged in the first, third, and fourth quadrants, and the second unit pattern 140b may be arranged in the second quadrant. Fig.13D As shown, the first super cell 150a may include a fourth array in which three first unit patterns 140a are arranged in the second, third, and fourth quadrants, and the second unit pattern 140b may be arranged in the first quadrant. Fig. 9 In the third part R3 shown, multiple FIG. 13A to FIG. 13D According to another exemplary embodiment, in the third portion R3, FIG. 13A to FIG. 13D The plurality of first super cells 150a shown may be mixed and arranged irregularly. For example, various first super cells 150a including a first array, a second array, a third array, and a fourth array in which the arrangements of the first unit patterns 140a and the second unit patterns 140b are different may be arranged irregularly in the third portion R3. Then, pattern artifacts caused by the periodicity of the third portion R3 may be averaged and reduced.

[0117] FIG. 14A to FIG. 14F 1 is a diagram showing examples of various arrangements of a plurality of unit patterns in the second super unit 150b of the nanophotonic lens array 140. Fig.14A As shown, the second super unit 150b may include a first array in which two first unit patterns 140a are arranged in the first and second quadrants, and two second unit patterns 140b may be arranged in the third and fourth quadrants. FIG. 14B to FIG. 14FAs shown, the second super unit 150b may include a second array, a third array, a fourth array, a fifth array, or a sixth array, in which two first unit patterns 140a are arranged in the third and fourth quadrants and two second unit patterns 140b may be arranged in the first and second quadrants, in which two first unit patterns 140a are arranged in the first and fourth quadrants and two second unit patterns 140b may be arranged in the second and third quadrants, in which two first unit patterns 140a are arranged in the second and third quadrants and two second unit patterns 140b may be arranged in the first and fourth quadrants, in which two first unit patterns 140a are arranged in the second and third quadrants and two second unit patterns 140b may be arranged in the first and fourth quadrants, in which two first unit patterns 140a are arranged in the first and third quadrants and two second unit patterns 140b may be arranged in the second and fourth quadrants, in which two first unit patterns 140a are arranged in the second and fourth quadrants and two second unit patterns 140b may be arranged in the first and third quadrants, in which six arrays are arranged in which two first unit patterns 140a are arranged in the second and fourth quadrants and two second unit patterns 140b may be arranged in the first and third quadrants. Fig. 9 In the fourth part R4 shown, multiple FIG. 14A to FIG. 14F According to another exemplary embodiment, in the fourth section R4, FIG. 14A to FIG. 14F The plurality of second super cells 150b shown may be mixed and arranged irregularly. For example, various second super cells 150b including a first array, a second array, a third array, a fourth array, a fifth array, and a sixth array in which the arrangements of the first unit patterns 140a and the second unit patterns 140b are different may be arranged irregularly in the fourth portion R4. Then, pattern artifacts caused by the periodicity of the fourth portion R4 may be averaged and reduced.

[0118] FIG. 15A to FIG. 15D 1 is a diagram showing examples of various arrangements of a plurality of unit patterns in the third super unit 150c of the nanophotonic lens array 140. FIG. 15A to FIG. 15D As shown, the third super unit 150c may include a first array, a second array, a third array, or a third array, in which one first unit pattern 140a is arranged in the third quadrant and three second unit patterns 140b are arranged in the first, second, and fourth quadrants, in which one first unit pattern 140a is arranged in the fourth quadrant and three second unit patterns 140b are arranged in the first, second, and third quadrants, in which one first unit pattern 140a is arranged in the second quadrant and three second unit patterns 140b are arranged in the first, third, and fourth quadrants, in which one first unit pattern 140a is arranged in the first quadrant and three second unit patterns 140b are arranged in the second, third, and fourth quadrants, in which one first unit pattern 140a is arranged in the first quadrant and three second unit patterns 140b are arranged in the second, third, and fourth quadrants. Fig. 9 In the fifth part R5 shown, multiple FIG. 15A to FIG. 15DAccording to another exemplary embodiment, in the fifth section R5, FIG. 15A to FIG. 15D The plurality of third super cells 150c shown in the figure may be mixed and arranged irregularly. For example, various third super cells 150c including the first array, the second array, the third array, and the fourth array in which the arrangements of the first unit pattern 140a and the second unit pattern 140b are different may be arranged irregularly in the fifth portion R5. Then, pattern artifacts caused by the periodicity of the fifth portion R5 may be averaged and reduced.

[0119] 16A to 16H is a diagram showing examples of various arrangements of multiple unit patterns in a super unit of a nanophotonic lens array 140 according to another example embodiment. An example is described in which a super unit includes four unit patterns arranged in a 2×2 array, but one or more embodiments are not limited thereto. For example, a super unit may include multiple unit patterns arranged in an N×M array. Here, at least one of N and M may be a positive integer of 2 or greater. According to another example embodiment, a super unit may include multiple unit patterns arranged in a 1×2 array or a 4×1 array. In this case, one of N and M may be 1. 16A to 16H An example is shown where N and M are 3. As the values ​​of N and M increase, the average cross-sectional size of the nanostructures can be finely adjusted, and discontinuities due to the discretized cross-sectional sizes nδ and (n+1)δ can be further reduced.

[0120] Fig.16A The illustrated super unit 160 a includes eight first unit patterns 140 a and one second unit pattern 140 b , and in the super unit 160 a , an average cross-sectional size of four nanostructures arranged at a central portion of the fourth pixel corresponding region 144 may be (n+1 / 9)δ. Fig. 16B The illustrated super unit 160b includes seven first unit patterns 140a and two second unit patterns 140b, and in the super unit 160b, an average cross-sectional size of four nanostructures arranged at a central portion of the fourth pixel corresponding region 144 may be (n+2 / 9)δ. Fig. 16C The illustrated super unit 160 c includes six first unit patterns 140 a and three second unit patterns 140 b , and in the super unit 160 c , the average cross-sectional size of four nanostructures arranged at the central portion of the fourth pixel corresponding region 144 may be (n+1 / 3)δ. Fig.16D The illustrated super unit 160d includes five first unit patterns 140a and four second unit patterns 140b, and in the super unit 160d, an average cross-sectional size of four nanostructures arranged at a central portion of the fourth pixel corresponding region 144 may be (n+4 / 9)δ. Fig.16E The illustrated super unit 160e includes four first unit patterns 140a and five second unit patterns 140b, and in the super unit 160e, an average cross-sectional size of four nanostructures arranged at a central portion of the fourth pixel corresponding region 144 may be (n+5 / 9)δ. Fig.16F The illustrated super unit 160f includes three first unit patterns 140a and six second unit patterns 140b, and in the super unit 160f, an average cross-sectional size of four nanostructures arranged at a central portion of the fourth pixel corresponding region 144 may be (n+2 / 3)δ. Figure 16G The illustrated super unit 160g includes two first unit patterns 140a and seven second unit patterns 140b, and in the super unit 160g, an average cross-sectional size of four nanostructures arranged at a central portion of the fourth pixel corresponding region 144 may be (n+7 / 9)δ. Fig.16H The illustrated super unit 160h includes one first unit pattern 140a and eight second unit patterns 140b, and in the super unit 160h, an average cross-sectional size of four nanostructures arranged at a central portion of the fourth pixel corresponding region 144 may be (n+8 / 9)δ.

[0121] Fig. 9 It is shown that all super cells in the third section R3, the fourth section R4, and the fifth section R5 include a plurality of cell patterns arranged in a 2×2 array, but one or more embodiments are not limited thereto. For example, a super cell in one of the third section R3, the fourth section R4, and the fifth section R5 may include a plurality of cell patterns arranged in a 2×2 array. FIG. 13A to FIG. 13D , FIG. 14A to FIG. 14F or FIG. 15A to FIG. 15D The multiple unit patterns are arranged in a 2×2 array as shown, and the super units in other parts may include 16A to 16H Multiple unit patterns are shown arranged in a 3×3 array. For example, the super unit in one of the third section R3, the fourth section R4, and the fifth section R5 may include multiple unit patterns arranged in an N1×M1 array, and the super unit in the other section may include multiple unit patterns arranged in an N2×M2 array, where N1 and N2 may be different positive integers, or M1 and M2 may be different positive integers.

[0122] Fig.17 is a diagram showing an example of the distribution of the cross-sectional size of the nanostructures in the entire area of ​​the nanophotonic lens array 140 . Fig. 9 Only a portion of the portion in the nanophotonic lens array 140 is shown as an example, and more portions may be included in the nanophotonic lens array 140. Similarly, when considering the CRA of the incident light, these portions may be arranged in the form of concentric circles. Fig.17As the distance from the center of the nanophotonic lens array 140 increases, the average cross-sectional size of the four nanostructures arranged at the central portion of the fourth pixel corresponding area 144 may increase. Fig.17 , the coordinate indicated as 0 represents the center of the nanophotonic lens array 140. The average cross-sectional sizes of the four nanostructures arranged at the central portion of the fourth pixel corresponding region 144 at the same distance from the center of the nanophotonic lens array 140 may be equal to each other.

[0123] For example, the cross-sectional size of the four nanostructures arranged at the central portion of the fourth pixel corresponding area 144 may increase from 200 nm to 270 nm in units of 1 nm or 2 nm. Here, the increase unit may be the minimum unit or minimum processing unit determined due to limitations such as device resolution or manufacturing cost as described above. In this example, the nanophotonic lens array 140 may include a plurality of unit patterns, wherein the cross-sectional sizes of the four nanostructures arranged at the central portion of the fourth pixel corresponding area 144 are different from each other. In the nanophotonic lens array 140, the plurality of unit patterns may be distributed in the form of concentric circles. In some parts of the nanophotonic lens array 140, a combination of different kinds of unit patterns may be distributed. Therefore, the increase in the cross-sectional size of the nanostructure is, for example, 1 nm or 2 nm, but the average cross-sectional size of the four nanostructures arranged at the central portion of the fourth pixel corresponding area 144 in the concentric circle portion of the nanophotonic lens array 140 may be increased or decreased in units of less than 1 nm or 2 nm based on the distance from the center of the nanophotonic lens array 140.

[0124] Fig.18 It is shown Fig.17 FIG. 1 is an enlarged view of the A1 portion of the nanophotonic lens array 140. Fig.18 The nanophotonic lens array 140 may include a first portion R1, a second portion R2, a third portion R3 between the first portion R1 and the second portion R2, a fourth portion R4 between the third portion R3 and the second portion R2, and a fifth portion R5 between the fourth portion R4 and the second portion R2, which are arranged in the form of concentric circles. Fig.18 The first, second, third, fourth and fifth parts R1, R2, R3, R4 and R5 shown can be connected with Fig. 9 The first, second, third, fourth and fifth portions R1, R2, R3, R4, R5 shown are the same. For example, the first portion R1 may include only a plurality of first unit patterns 140a. The second portion R2 may include only a plurality of second unit patterns 140b, and the third portion R3, the fourth portion R4 and the fifth portion R5 may include a plurality of super units 150. For example, Fig. 9As shown, the third portion R3 may include a plurality of first super cells 150a, each of which has three first unit patterns 140a and one second unit pattern 140b arranged in a 2×2 array; the fourth portion R4 may include a plurality of second super cells 150b, each of which has two first unit patterns 140a and two second unit patterns 140b arranged in a 2×2 array; and the fifth portion R5 may include a plurality of third super cells 150c, each of which has one first unit pattern 140a and three second unit patterns 140b arranged in a 2×2 array. Fig.18 In FIG. 1 , the arrow indicates the center direction of the nanophotonic lens array 140 .

[0125] Fig.19 is a diagram showing an example of an image generated by an image sensor according to a related example. The image sensor according to the related example includes a nanophotonic lens array, which does not include a portion where the first unit pattern 140a and the second unit pattern 140b are not arranged in combination. For example, according to a related example, when the cross-sectional size of the four nanostructures arranged at the central portion of the fourth pixel corresponding area 144 can be increased from 200nm to 270nm in units of 1nm or 2nm, the nanophotonic lens array can include a plurality of concentric circle portions, and different types of unit patterns are respectively arranged in the plurality of concentric circle portions. Reference Fig.19 , pattern artifacts such as shadow patterns may appear, where the brightness of the image varies along the boundaries between parts with different cross-sectional sizes of the nanostructures. This is because the cross-sectional size of the nanostructures between the parts is not continuous.

[0126] Fig. 20 is a diagram illustrating an example of an image generated by an image sensor according to an example embodiment. The image sensor according to the example embodiment includes Fig.17 The nanophotonic lens array 140 shown. For example, when the cross-sectional size of the four nanostructures arranged at the central portion of the fourth pixel corresponding area 144 can be increased from 200nm to 270nm in units of 1nm or 2nm, the nanophotonic lens array 140 may include a plurality of concentric circular portions, in which different kinds of unit patterns are respectively arranged, and three middle portions arranged between two adjacent concentric circular portions and having two different unit patterns are mixed in different proportions. In this case, the nanophotonic lens array 140 may include a plurality of concentric circular portions of four nanostructures with different average cross-sectional sizes arranged at the central portion of the fourth pixel corresponding area 144. The number of concentric circular portions in the nanophotonic lens array 140 according to the example embodiment may be much larger than the number of concentric circular portions of the related example. Reference Fig. 20, two different kinds of unit patterns are arranged in combination, wherein the cross-sectional sizes of the four nanostructures arranged at the central portion of the fourth pixel corresponding area 144 are different from each other, so that the discontinuity between the portions can be reduced and the brightness of the image can be made uniform.

[0127] An example has been described in which the cross-sectional dimensions of the four nanostructures arranged at the central portion of the fourth pixel corresponding area 144 vary according to the position on the image sensor or the nanophotonic lens array 140. Likewise, an example has been described above in which the cross-sectional dimensions of the nanostructures vary according to the distance from the center of the image sensor or the nanophotonic lens array 140. However, the embodiment is not limited thereto. Considering various mass elements in the image sensor, the variation of the cross-sectional dimensions of the nanostructures in the nanophotonic lens array 140 may be much more complicated. For example, the cross-sectional dimensions of at least one nanostructure in the first pixel corresponding area 141, the second pixel corresponding area 142, or the third pixel corresponding area 143, and the fourth pixel corresponding area 144 may vary, and the cross-sectional dimensions of at least one nanostructure may vary according to the azimuth direction based on the center of the image sensor or the nanophotonic lens array 140. Likewise, the cross-sectional shape of at least one nanostructure may vary according to the position on the image sensor or the nanophotonic lens array 140. For example, in a plurality of lenses, the cross-sectional dimensions or cross-sectional shapes of at least one nanostructure may vary independently according to independent rules that may be the same or different rules.

[0128] Fig.21 and Fig. 22 1 is a diagram showing examples of various arrangements of a plurality of unit patterns in a super unit of the nanophotonic lens array 140 when the cross-sectional size of the nanostructure is independently changed in a plurality of lenses. Fig.21 and Fig. 22 , the arrow on the horizontal axis represents the cross-sectional size of the nanostructure arranged at the central portion of the second pixel corresponding area 142 , and the arrow on the vertical axis represents the cross-sectional size of the nanostructure arranged at the central portion of the third pixel corresponding area 143 .

[0129] refer to Fig.21 , the nanophotonic lens array 140 may include a plurality of portions in which a plurality of super cells including a first super cell 170a, a second super cell 170b, a third super cell 170c, a fourth super cell 170d, a fifth super cell 170e, a sixth super cell 170f, a seventh super cell 170g, an eighth super cell 170h, and a ninth super cell 170i are arranged. Fig.21Only one super unit for each part is shown as a representative. Each of the first to ninth super units 170a, 170b, 170c, 170d, 170e, 170f, 170g, 170h and 170i may include four unit patterns arranged in a 2×2 array. In each unit pattern, circles with different sizes represent pixel corresponding areas in the unit pattern. For example, in each of the unit patterns of the first super unit 170a, the smallest circle represents the second pixel corresponding area 142, the largest circle represents the third pixel corresponding area 143, and two circles of the same size represent the first and fourth pixel corresponding areas 141 and 144. In some unit patterns, square and diamond graphics represent pixel corresponding areas including nanostructures having cross-sectional sizes different from nanostructures in pixel corresponding areas at the same position in other unit patterns. For example, the square represented in the second super unit 170b represents the second pixel corresponding area 142. The cross-sectional size of the nanostructure in the second pixel corresponding region 142 represented as a square is different from the cross-sectional size of the nanostructure in the second pixel corresponding region 142 represented as a circle. The diamond shape indicated in the fourth super cell 170d represents the third pixel corresponding region 143. The cross-sectional size of the nanostructure in the third pixel corresponding region 143 represented as a diamond is different from the cross-sectional size of the nanostructure in the third pixel corresponding region 143 represented as a circle.

[0130] The first super unit 170a may include four identical first unit patterns 240a. In the first unit pattern 240a, the first nanostructure arranged at the central portion of the second pixel corresponding region 142 has a first cross-sectional size nδ, and the third nanostructure arranged at the central portion of the third pixel corresponding region 143 may have a third cross-sectional size mδ independent of the first cross-sectional size, for example, the third cross-sectional size may be the same as or different from the first cross-sectional size. Here, m and n are positive integers independent of each other. In the first super unit 170a, the average cross-sectional size of the nanostructure arranged at the central portion of the second pixel corresponding region 142 may be nδ, and the average cross-sectional size of the nanostructure arranged at the central portion of the third pixel corresponding region 143 may be mδ.

[0131] The second super unit 170b may include two first unit patterns 240a and two second unit patterns 240b. In the second unit pattern 240b, the second nanostructure arranged at the central portion of the second pixel corresponding region 142 may have a second cross-sectional size (n+1)δ different from the first cross-sectional size, and the third nanostructure arranged at the central portion of the third pixel corresponding region 143 may have a third cross-sectional size mδ independent of the first and second cross-sectional sizes, for example, the third cross-sectional size may be the same as or different from the first and second cross-sectional sizes. Therefore, in the second super unit 170b, the average cross-sectional size of the nanostructure arranged at the central portion of the second pixel corresponding region 142 may be (n+0.5)δ, and the average cross-sectional size of the nanostructure arranged at the central portion of the third pixel corresponding region 143 may be mδ.

[0132] The third super unit 170c may include four identical second unit patterns 240b. Therefore, in the third super unit 170c, the average cross-sectional size of the nanostructures arranged at the center portion of the second pixel corresponding region 142 may be (n+1)δ, and the average cross-sectional size of the nanostructures arranged at the center portion of the third pixel corresponding region 143 may be mδ.

[0133] The fourth super unit 170d may include two first unit patterns 240a and two third unit patterns 240c. In the third unit pattern 240c, the first nanostructure arranged at the central portion of the second pixel corresponding region 142 may have a first cross-sectional size nδ. The fourth nanostructure arranged at the central portion of the third pixel corresponding region 143 in the third unit pattern 240c (which is located at the corresponding position of the third nanostructure in the first unit pattern 240a) may have a fourth cross-sectional size (m+1)δ that is independent of the first and second cross-sectional sizes and different from the third cross-sectional size, for example, the fourth cross-sectional size may be the same as or different from the first cross-sectional size. Therefore, in the fourth super unit 170d, the average cross-sectional size of the nanostructure arranged at the central portion of the second pixel corresponding region 142 may be nδ, and the average cross-sectional size of the nanostructure arranged at the central portion of the third pixel corresponding region 143 may be (m+0.5)δ.

[0134] The fifth super unit 170e may include two first unit patterns 240a and two fourth unit patterns 240d. In the fourth unit pattern 240d, the second nanostructure arranged at the center portion of the second pixel corresponding region 142 has a second cross-sectional size (n+1)δ, and the fourth nanostructure arranged at the center portion of the third pixel corresponding region 143 may have a fourth cross-sectional size (m+1)δ. Therefore, in the fifth super unit 170e, the average cross-sectional size of the nanostructure arranged at the center portion of the second pixel corresponding region 142 may be (n+0.5)δ, and the average cross-sectional size of the nanostructure arranged at the center portion of the third pixel corresponding region 143 may be (m+0.5)δ.

[0135] The sixth super unit 170f may include two second unit patterns 240b and two fourth unit patterns 240d. Therefore, in the sixth super unit 170f, the average cross-sectional size of the nanostructures arranged at the central portion of the second pixel corresponding region 142 may be (n+1)δ, and the average cross-sectional size of the nanostructures arranged at the central portion of the third pixel corresponding region 143 may be (m+0.5)δ.

[0136] The seventh super unit 170g may include four identical third unit patterns 240c. Therefore, in the seventh super unit 170g, the average cross-sectional size of the nanostructures arranged at the center portion of the second pixel corresponding region 142 may be nδ, and the average cross-sectional size of the nanostructures arranged at the center portion of the third pixel corresponding region 143 may be (m+1)δ.

[0137] The eighth super cell 170h may include two third unit patterns 240c and two fourth unit patterns 240d. Therefore, in the eighth super cell 170h, the average cross-sectional size of the nanostructures arranged at the central portion of the second pixel corresponding region 142 may be (n+0.5)δ, and the average cross-sectional size of the nanostructures arranged at the central portion of the third pixel corresponding region 143 may be (m+1)δ.

[0138] Finally, the ninth super cell 170i may include four identical fourth unit patterns 240d. Therefore, in the ninth super cell 170i, the average cross-sectional size of the nanostructures arranged at the center portion of the second pixel corresponding region 142 may be (n+1)δ, and the average cross-sectional size of the nanostructures arranged at the center portion of the third pixel corresponding region 143 may be (m+1)δ.

[0139] Fig. 22 The arrangement of the unit pattern shown can be Fig.21 The arrangement of the unit patterns shown is similar, and some unit patterns are similar to Fig.21 For example, in Fig. 22 In place of Fig.21 The second super cell 170b, the fifth super cell 170e, and the eighth super cell 170h shown may be arranged with a tenth super cell 170j, an eleventh super cell 170k, and a twelfth super cell 170l, respectively.

[0140] The tenth super cell 170j has an arrangement in which the positions of the first unit pattern 240a and the second unit pattern 240b in the second super cell 170b are exchanged with each other. In the tenth super cell 170j, the average cross-sectional size of the nanostructures arranged at the central portions of the second pixel corresponding region 142 and the third pixel corresponding region 143 may be the same as the average cross-sectional size of the nanostructures arranged at the second pixel corresponding region 142 and the third pixel corresponding region 143 in the second super cell 170b.

[0141] The eleventh super cell 170k may include two second unit patterns 240b and two third unit patterns 240c, instead of two first unit patterns 240a and two fourth unit patterns 240d. Therefore, the average cross-sectional size of the nanostructures arranged at the central portions of the second pixel corresponding region 142 and the third pixel corresponding region 143 in the eleventh super cell 170k may be the same as the average cross-sectional size of the nanostructures arranged at the second pixel corresponding region 142 and the third pixel corresponding region 143 in the fifth super cell 170e.

[0142] Likewise, the twelfth super cell 1701 may have an arrangement in which the positions of the third unit pattern 240c and the fourth unit pattern 240d in the eighth super cell 170h are exchanged with each other. Therefore, the average cross-sectional size of the nanostructures arranged at the central portions of the second pixel corresponding region 142 and the third pixel corresponding region 143 in the twelfth super cell 1701 may be the same as the average cross-sectional size of the nanostructures arranged at the second pixel corresponding region 142 and the third pixel corresponding region 143 in the eighth super cell 170h.

[0143] As described above, the nanophotonic lens array 140 may include a plurality of super units, wherein unit patterns selected from the first unit pattern 240a, the second unit pattern 240b, the third unit pattern 240c, and the fourth unit pattern 240d are arranged in an N×M array. For example, the plurality of super units may include various combinations of the first unit pattern 240a, the second unit pattern 240b, the third unit pattern 240c, and the fourth unit pattern 240d. By including various super units of at least one of the first, second, third, and fourth unit patterns 240a, 240b, 240c, and 240d, the average cross-sectional size or cross-sectional shape of at least one nanostructure may be independently and gradually changed in the nanophotonic lens array 140.

[0144] The image sensor 1000 according to the example embodiment may have improved light utilization efficiency and reduced resolution degradation. Also, the image sensor 1000 according to the example embodiment may provide an image with excellent image quality in which pattern artifacts caused by changes in the discretized cross-sectional size of the nanostructure rarely occur. Therefore, the size of one pixel in the pixel of the image sensor 1000 or the size of an independent photosensitive unit may be reduced, and thus the image sensor 1000 with higher resolution may be provided. The image sensor 1000 according to the example embodiment may form a camera module together with a module lens of various functions, and may be used in various electronic devices.

[0145] Fig.23 1 is a block diagram showing an example of an electronic device ED01 including an image sensor 1000. Fig.23 In the network environment ED00, the electronic device ED01 can communicate with another electronic device ED02 via a first network ED98 (short-range wireless communication network, etc.), or can communicate with another electronic device ED04 and / or a server ED08 via a second network ED99 (long-range wireless communication network, etc.). The electronic device ED01 can communicate with the electronic device ED04 via the server ED08. The electronic device ED01 may include a processor ED20, a memory ED30, an input device ED50, a sound output device ED55, a display device ED60, an audio module ED70, a sensor module ED76, an interface ED77, a tactile module ED79, a camera module ED80, a power management module ED88, a battery ED89, a communication module ED90, a subscriber identification module ED96 and / or an antenna module ED97. In the electronic device ED01, some elements (display device ED60, etc.) may be omitted, or another element may be added. Some elements may be configured as an integrated circuit. For example, the sensor module ED76 (fingerprint sensor, iris sensor, illumination sensor, etc.) can be embedded and implemented in the display device ED60 (display, etc.).

[0146] The processor ED20 can control one or more elements (hardware, software elements, etc.) of the electronic device ED01 connected to the processor ED20 by executing software (program ED40, etc.), and can perform various data processing or operations. As part of the data processing or operation, the processor ED20 can load commands and / or data received from another element (sensor module ED76, communication module ED90, etc.) into the volatile memory ED32, can process the commands and / or data stored in the volatile memory ED32, and can store the result data in the non-volatile memory ED34. The processor ED20 may include a main processor ED21 (central processing unit, application processor, etc.) and an auxiliary processor ED23 (graphics processing unit, image signal processor, sensor hub processor, communication processor, etc.), and the auxiliary processor ED23 can operate independently of the main processor ED21 or operate together with the main processor ED21. The auxiliary processor ED23 can use less power than the main processor ED21 and can perform designated functions.

[0147] The auxiliary processor ED23 represents the main processor ED21 when the main processor ED21 is in an inactive state (sleep state), or together with the main processor ED21 when the main processor ED21 is in an active state (application execution state), the auxiliary processor ED23 can control functions and / or states related to some elements in the electronic device ED01 (display device ED60, sensor module ED76, communication module ED90, etc.). The auxiliary processor ED23 (image signal processor, communication processor, etc.) can be implemented as a part of another element (camera module ED80, communication module ED90, etc.) functionally related thereto.

[0148] The memory ED30 can store various data required by the components of the electronic device ED01 (processor ED20, sensor module ED76, etc.). The data may include, for example, input data and / or output data about software (program ED40, etc.) and commands related thereto. The memory ED30 may include a volatile memory ED32 and / or a non-volatile memory ED34.

[0149] The program ED40 may be stored as software in the memory ED30 , and may include an operating system ED42 , middleware ED44 , and / or applications ED46 .

[0150] The input device ED50 may receive commands and / or data to be used in elements (processor ED20, etc.) of the electronic device ED01 from outside (user, etc.) of the electronic device ED01. The input device ED50 may include a microphone, a mouse, a keyboard, and / or a digital pen (stylus).

[0151] The sound output device ED55 can output sound signals to the outside of the electronic device ED01. The sound output device ED55 may include a speaker and / or a receiver. The speaker may be used for general purposes, such as multimedia reproduction or recording playback, and the receiver may be used to receive calls. The receiver may be coupled as part of the speaker or may be implemented as an independent device.

[0152] The display device ED60 can provide visual information to the outside of the electronic device ED01. The display device ED60 may include a display, a holographic device or a projector, and a control circuit for controlling the corresponding device. The display device ED60 may include a touch circuit configured to sense a touch and / or a sensor circuit (pressure sensor, etc.) configured to measure the strength of the force generated by the touch.

[0153] The audio module ED70 can convert sound into an electrical signal, or vice versa. The audio module ED70 can obtain sound through the input device ED50, or can output sound via a sound output device ED55 and / or a speaker and / or earphone of another electronic device (electronic device ED02, etc.) directly or wirelessly connected to the electronic device ED01.

[0154] The sensor module ED76 can sense the operating state (power, temperature, etc.) or the external environment state (user state, etc.) of the electronic device ED01, and can generate an electrical signal and / or data value corresponding to the sensed state. The sensor module ED76 can include a gesture sensor, a gyroscope sensor, a pressure sensor, a magnetic sensor, an acceleration sensor, a grip sensor, a proximity sensor, a color sensor, an infrared (IR) sensor, an in-body sensor, a temperature sensor, a humidity sensor, and / or an illumination sensor.

[0155] Interface ED77 may support one or more specified protocols that may be used so that electronic device ED01 is directly or wirelessly connected to another electronic device (electronic device ED02, etc.). Interface ED77 may include a high-definition multimedia interface (HDMI), a universal serial bus (USB) interface, an SD card interface, and / or an audio interface.

[0156] The connection terminal ED78 may include a connector through which the electronic device ED01 can be physically connected to another electronic device (electronic device ED02, etc.). The connection terminal ED78 may include an HDMI connector, a USB connector, an SD card connector, and / or an audio connector (headphone connector, etc.).

[0157] The haptic module ED79 may convert the electrical signal into mechanical stimulation (vibration, motion, etc.) or electrical stimulation that the user may feel through tactile or kinesthetic sensation. The haptic module ED79 may include a motor, a piezoelectric device, and / or an electrical stimulation device.

[0158] The camera module ED80 can capture still images and videos. The camera module ED80 may include a lens assembly having one or more lenses, Figure 1 The camera module ED80 may include an image sensor 1000, an image signal processor, and / or a flash. The lens assembly included in the camera module ED80 may collect light emitted from a subject as a subject to be captured.

[0159] The power management module ED88 may manage power supplied to the electronic device ED01. The power management module ED88 may be implemented as a part of a power management integrated circuit (PMIC).

[0160] The battery ED89 can supply power to the components of the electronic device ED01. The battery ED89 may include a non-rechargeable primary battery, a rechargeable secondary battery, and / or a fuel cell.

[0161] The communication module ED90 can support the establishment of a direct (wired) communication channel and / or a wireless communication channel between the electronic device ED01 and another electronic device (electronic device ED02, electronic device ED04, server ED08, etc.), and perform communication through the established communication channel. The communication module ED90 can operate independently of the processor ED20 (application processor, etc.), and can include one or more communication processors that support direct communication and / or wireless communication. The communication module ED90 can include a wireless communication module ED92 (cellular communication module, short-range wireless communication module, global navigation satellite system (GNSS) communication module) and / or a wired communication module ED94 (local area network (LAN) communication module, power line communication module, etc.). Among the communication modules, the corresponding communication module can communicate with another electronic device via a first network ED09 (such as a short-range communication network of Bluetooth, WiFi Direct or Infrared Data Association (IrDA)) or a second network ED99 (such as a long-range communication network of a cellular network, the Internet or a computer network (LAN, WAN, etc.)). The various communication modules described above may be integrated into one component (a single chip, etc.), or may be implemented as multiple components (multiple chips) separated from each other. The wireless communication module ED92 may identify and authenticate the electronic device ED01 in a communication network such as the first network ED98 and / or the second network ED99 by using subscriber information (International Mobile Subscriber Identifier (IMSI) etc.) stored in the subscriber identification module ED96.

[0162] The antenna module ED97 can send signals and / or power to the outside (another electronic device, etc.), or receive signals and / or power from the outside (another electronic device, etc.). The antenna may include a radiator formed as a conductive pattern formed on a substrate (PCB, etc.). The antenna module ED97 may include one or more antennas. When the antenna module ED97 includes multiple antennas, the communication module ED90 may select an antenna suitable for a communication type used in a communication network such as a first network ED98 and / or a second network ED99 from the multiple antennas. Signals and / or power can be transmitted between the communication module ED90 and another electronic device via the selected antenna. Another component other than the antenna (RFIC, etc.) may be included as part of the antenna module ED97.

[0163] Some elements may be connected to each other via a communication method among peripheral devices (bus, general purpose input and output (GPIO), serial peripheral interface (SPI), mobile industry processor interface (MIPI), etc.) and may exchange signals (commands, data, etc.).

[0164] Commands or data can be sent or received between the electronic device ED01 and the external electronic device ED04 via the server ED08 connected to the second network ED99. The other electronic devices ED02 and ED04 can be devices of the same or different types as the electronic device ED01. All or some operations performed in the electronic device ED01 can be performed in one or more of the other electronic devices ED02, ED04 and ED08. For example, when the electronic device ED01 must perform a certain function or service, the electronic device ED01 can request one or more other electronic devices to perform part or all of the function or service instead of performing the function or service itself. The one or more electronic devices that receive the request perform additional functions or services related to the request, and can transmit the results of the execution to the electronic device ED01. To this end, for example, cloud computing, distributed computing or client-server computing technology can be used.

[0165] Fig.24 It is shown Fig.23 1 is a block diagram of an example of a camera module ED80 included in an electronic device ED01. Fig.24, the camera module ED80 may include a lens assembly 1110, a flash 1120, an image sensor 1000, an image stabilizer 1140, a memory 1150 (buffer memory, etc.) and / or an image signal processor 1160. The lens assembly 1110 may collect light emitted from an object to be captured. The camera module ED80 may include a plurality of lens assemblies 1110, and in this case, the camera module ED80 may include a dual camera module, a 360-degree camera, or a spherical camera. Some of the plurality of lens assemblies 1110 may have the same lens characteristics (viewing angle, focal length, autofocus, F number, optical zoom, etc.) or different lens characteristics. The lens assembly 1110 may include a wide-angle lens or a telephoto lens.

[0166] The flash 1120 may emit light for enhancing light emitted or reflected from an object. The flash 1120 may emit visible light or infrared light. The flash 1120 may include one or more light emitting diodes (red-green-blue (RGB) LEDs, white light LEDs, infrared LEDs, ultraviolet LEDs, etc.) and / or xenon lamps. The image sensor 1000 may be the above-referenced Figure 1 The described image sensor converts light emitted or reflected from an object and transmitted through the lens assembly 1110 into an electric signal to obtain an image corresponding to the object.

[0167] The image stabilizer 1140 moves one or more lenses included in the lens assembly 1110 or the image sensor 1000 in a certain direction or controls the characteristics of the image sensor 1000 (adjustment of readout timing, etc.) in response to the movement of the camera module ED80 or the electronic device 1101 including the camera module ED80 so as to compensate for the negative influence of the movement. The image stabilizer 1140 can sense the movement of the camera module ED80 or the electronic device ED01 by using a gyro sensor (not shown) or an acceleration sensor (not shown) provided inside or outside the camera module ED80. The image stabilizer 1140 can be implemented as an optical type.

[0168] The memory 1150 may store some or all of the data of the image obtained by the image sensor 1000 for the next image processing operation. For example, when a plurality of images are obtained at a high speed, the obtained raw data (Bayer pattern data, high-resolution data, etc.) is stored in the memory 1150, and only the low-resolution image is displayed. Then, the raw data of the selected image (user selection, etc.) may be transmitted to the image signal processor 1160. The memory 1150 may be integrated with the memory ED30 of the electronic device ED01, or may include an additional memory that operates independently.

[0169] The image signal processor 1160 may perform image processing on an image obtained by the image sensor 1000 or image data stored in the memory 1150. Image processing may include depth map generation, three-dimensional modeling, panorama generation, feature extraction, image combination and / or image compensation (noise reduction, resolution adjustment, brightness adjustment, blur, sharpening, softening, etc.). The image signal processor 1160 may perform control (exposure time control, readout timing control, etc.) of the elements (image sensor 1000, etc.) included in the camera module ED80. In addition, the image signal processor 1160 may generate a full-color image by executing the above demosaicing algorithm. For example, when performing a demosaicing algorithm to generate a full-color image, the image signal processor 1160 may reconstruct most of the spatial resolution information by using an image signal of a green channel or a yellow channel having a high spatial sampling rate.

[0170] The image processed by the image signal processor 1160 may be stored again in the memory 1150 for additional processing, or may be provided to an external element of the camera module ED80 (e.g., the memory ED30, the display device ED60, the electronic device ED02, the electronic device ED04, the server ED08, etc.). The image signal processor 1160 may be integrated with the processor ED20, or may be configured as an additional processor that operates independently of the processor ED20. When the image signal processor 1160 is configured as an additional processor separate from the processor ED20, the image processed by the image signal processor 1160 undergoes additional image processing by the processor ED20 and may then be displayed on the display device ED60.

[0171] Likewise, the image signal processor 1160 may receive two output signals independently from adjacent photosensitive units in each pixel or sub-pixel of the image sensor 1000, and may generate an autofocus signal from a difference between the two output signals. The image signal processor 1160 may control the lens assembly 1110 so that a focus of the lens assembly 1110 may be accurately formed on the surface of the image sensor 1000 based on the autofocus signal.

[0172] The electronic device ED01 may also include one or more camera modules with different characteristics or functions. The camera module may include Fig.24The elements of the camera module ED80 are similar to the elements of the camera module ED80, and the image sensor included in the camera module can be implemented as a CCD sensor and / or a CMOS sensor and can include one or more sensors selected from image sensors with different characteristics, such as an RGB sensor, a black and white (BW) sensor, an IR sensor, or a UV sensor. In this case, one of the multiple camera modules ED80 may include a wide-angle camera, and another camera module ED80 may include a telephoto camera. Similarly, one of the multiple camera modules ED80 may include a front camera, and another camera module ED80 may include a rear camera.

[0173] Fig.25 is a block diagram of an electronic device 1200 including a multi-camera module, and Fig.26 yes Fig.25 Detailed block diagram of a camera module in an electronic device is shown.

[0174] refer to Fig.25 , the electronic device 1200 may include a camera module group 1300 , an application processor 1400 , a power management integrated circuit (PMIC) 1500 , an external memory 1600 , and an image generator 1700 .

[0175] The camera module group 1300 may include a plurality of camera modules 1300a, 1300b, and 1300c. Although the drawings show an example in which three camera modules 1300a, 1300b, and 1300c are arranged, one or more embodiments are not limited thereto. In some embodiments, the camera module group 1300 may be modified to include only two camera modules. Similarly, in some embodiments, the camera module group 1300 may be modified to include n (n is a natural number of 4 or greater) camera modules.

[0176] In the following, reference is made to Fig.26 A detailed configuration of one camera module 1300 b is described in detail, but the description provided below may also be applied to other camera modules 1300 a and 1300 c according to example embodiments.

[0177] refer to Fig.26 , the camera module 1300 b may include a prism 1305 , an optical path folding element (OPFE) 1310 , an actuator 1330 , an image sensing device 1340 , and a storage unit 1350 .

[0178] The prism 1305 may include a reflective surface 1307 having a reflective material and may deform a path of light L incident from the outside.

[0179] In some embodiments, the prism 1305 can change the path of the light L incident in the first direction (X direction) to a second direction (Y direction) perpendicular to the first direction (X direction). In addition, the prism 1305 can rotate the reflective surface 1307 having a reflective material around the central axis 1106 in the A direction, or rotate around the central axis 1306 in the B direction, so that the path of the light L incident in the first direction (X direction) can be changed to a second direction (Y direction) perpendicular to the first direction (X direction). Here, the OPFE 1310 can also move in a third direction (Z direction) perpendicular to the first direction (X direction) and the second direction (Y direction).

[0180] In some embodiments, as shown in the figure, the maximum rotation angle of the prism 1305 in the A direction is 15° or less in the positive A direction and is greater than 15° in the negative A direction, but the embodiment is not limited thereto.

[0181] In some embodiments, the prism 1305 can be moved by an angle of about 20°, or between 10° and 20°, or between 15° and 20° in the positive B direction or the negative B direction. Here, the moving angle is the same in the positive B direction or the negative B direction, or can be similar within a range of about 1°.

[0182] In some embodiments, the prism 1305 can move the reflective surface 1307 of the reflective material in a third direction (eg, the Z direction) parallel to the direction in which the central axis 1306 extends.

[0183] OPFE 1310 may include, for example, optical lenses formed in m groups (here, m is a natural number). Here, the m lenses move in the second direction (Y direction) and may change the optical zoom ratio of camera module 1300b. For example, when the basic optical zoom ratio of camera module 1300b is Z and the m optical lenses included in OPFE 1310 move, the optical zoom ratio of camera module 1300b may be changed to 3Z, 5Z, or 10Z or more.

[0184] The actuator 1330 may move the OPFE 1310 or the optical lens (hereinafter, referred to as the optical lens) to a specific position. For example, the actuator 1330 may adjust the position of the optical lens so that the image sensor 1342 may be located at the focal length of the optical lens for precise sensing operation.

[0185] The image sensing device 1340 may include an image sensor 1342, a control logic 1344, and a memory 1346. The image sensor 1342 may sense an image of a sensing target by using light L provided through an optical lens. The control logic 1344 may control the overall operation of the camera module 1300b. For example, the control logic 1344 may control the operation of the camera module 1300b according to a control signal provided through the control signal line CSLb.

[0186] For example, the image sensor 1342 may include the color separation lens array or nanophotonic lens array described above. The image sensor 1342 may receive more signals separated according to the wavelength in each pixel by using a color separation lens array based on a nanostructure. Due to the above effect, the light intensity required to generate a high-resolution, high-quality image under low illumination can be guaranteed.

[0187] The memory 1346 may store information necessary for the operation of the camera module 1300b, such as calibration data 1347. The calibration data 1347 may include information necessary for generating image data by using the light L provided from the outside through the camera module 1300b. The calibration data 1347 may include, for example, information about the above-mentioned degree of rotation, information about the focal length, information about the optical axis, etc. When the camera module 1300b is implemented in the form of a multi-state camera whose focal length changes according to the position of the optical lens, the calibration data 1347 may include information related to the focal length value of the optical lens according to each position (or state) and autofocus.

[0188] The storage unit 1350 may store image data sensed by the image sensor 1342. The storage unit 1350 may be provided outside the image sensing device 1340, and may be stacked with a sensor chip included in the image sensing device 1340. In some embodiments, the storage unit 1350 may be implemented as an electrically erasable programmable read-only memory (EEPROM), but one or more embodiments are not limited thereto.

[0189] refer to Fig.25 and Fig.26 In some embodiments, each of the plurality of camera modules 1300a, 1300b, and 1300c may include an actuator 1330. Therefore, each of the plurality of camera modules 1300a, 1300b, and 1300c may include calibration data 1347 that is the same as or different from other camera modules depending on the operation of the actuator 1330 included therein.

[0190] In some embodiments, one of the plurality of camera modules 1300a, 1300b, and 1300c (e.g., 1300b) may be a folded lens type camera module including the above-described prism 1305 and OPFE 1310, and the other camera modules (e.g., 1300a and 1300c) may be vertical camera modules not including the prism 1305 and OPFE 1310. However, the present disclosure is not limited thereto.

[0191] In some embodiments, one (eg, 1300c) of the plurality of camera modules 1300a, 1300b, and 1300c may be a vertical depth camera that extracts depth information by using infrared rays (IR).

[0192] In some embodiments, at least two camera modules (e.g., 1300a and 1300b) among the plurality of camera modules 1300a, 1300b, and 1300c may have different fields of view. In this case, for example, optical lenses of at least two camera modules (e.g., 1300a and 1300b) among the plurality of camera modules 1300a, 1300b, and 1300c may be different from each other, but one or more embodiments may not be limited thereto.

[0193] Likewise, in some embodiments, the plurality of camera modules 1300a, 1300b, and 1300c may have different fields of view from each other. In this case, the optical lenses respectively included in the plurality of camera modules 1300a, 1300b, and 1300c may be different from each other, but the inventive concept is not limited thereto.

[0194] In some embodiments, the plurality of camera modules 1300a, 1300b, and 1300c may be physically isolated from each other. That is, the sensing area of ​​one image sensor 1342 may not be divided and used by the plurality of camera modules 1300a, 1300b, and 1300c, but the plurality of camera modules 1300a, 1300b, and 1300c may each have an independent image sensor 1342 provided therein.

[0195] Return to reference Fig.25 , the application processor 1400 may include an image processing device 1410, a memory controller 1420, and an internal memory 1430. The application processor 1400 may be implemented separately from the plurality of camera modules 1300a, 1300b, and 1300c. For example, the application processor 1400 and the plurality of camera modules 1300a, 1300b, and 1300c may be separately implemented as separate semiconductor chips.

[0196] The image processing device 1410 may include a plurality of image processors 1411 , 1412 , and 1413 and a camera module controller 1414 .

[0197] Image data generated by each of the camera modules 1300a, 1300b, and 1300c may be provided to the image processing device 1410 via separate image signal lines. For example, image data transmission may be performed using a camera serial interface (CSI) based on a mobile industry processor interface (MIPI), but is not limited thereto.

[0198] The image data transmitted to the image processing device 1410 may be stored in the external memory 1600 before being transmitted to the image processors 1411 and 1412. The image data stored in the external memory 1600 may be provided to the image processor 1411 and / or the image processor 1412. The image processor 1411 may correct the image data to generate a video. The image processor 1412 may correct the image data to generate a still image. For example, the image processors 1411 and 1412 may perform pre-processing operations such as color calibration, gamma calibration, etc. on the image data.

[0199] The image processor 1411 may include sub-processors. When the number of sub-processors is equal to the number of camera modules 1300a, 1300b, and 1300c, each sub-processor may process image data provided from one camera module. When the number of sub-processors is less than the number of camera modules 1300a, 1300b, and 1300c, at least one of the sub-processors may process image data provided from a plurality of camera modules by using a timing sharing process. Image data processed by the image processor 1411 and / or the image processor 1412 may be stored in the external memory 1600 before being transmitted to the image processor 1413. The image data stored in the external memory 1600 may be transmitted to the image processor 1412. The image processor 1412 may perform post-processing operations on the image data, such as noise calibration, sharpening calibration, and the like.

[0200] The image data processed in the image processor 1413 may be provided to the image generator 1700. The image generator 1700 may generate a final image by using the image data provided from the image processor 1413 according to the image generation information or the mode signal.

[0201] Specifically, the image generator 1700 may generate an output image by merging at least part of the image data generated by the camera modules 1300a, 1300b, and 1300c having different fields of view according to the image generation information or the mode signal. In addition, the image generator 1700 may generate an output image by selecting one of the image data generated by the camera modules 1300a, 1300b, and 1300c having different fields of view according to the image generation information or the mode signal.

[0202] In some embodiments, the image generation information may include a zoom signal or a zoom factor. Likewise, in some embodiments, the mode signal may be, for example, a signal based on a mode selected by a user.

[0203] When the image generation information is a zoom signal (zoom factor) and the camera modules 1300a, 1300b, and 1300c have different fields of view (angles of view) from each other, the image generator 1700 may perform different operations according to the type of the zoom signal. For example, when the zoom signal is a first signal, the image data output from the camera module 1300a is merged with the image data output from the camera module 1300c, and then, an output image may be generated by using the merged image signal and the image data output from the camera module 1300b and not used in the merge. When the zoom signal is a second signal different from the first signal, the image generator 1700 may not perform image data merging, and then, an output image may be generated by selecting one image data output from the camera modules 1300a, 1300b, and 1300c, respectively. However, one or more embodiments are not limited thereto, and the method of processing image data may be modified as needed.

[0204] The camera module controller 1414 may provide a control signal to each of the camera modules 1300a, 1300b, and 1300c. The control signal generated by the camera module controller 1414 may be provided to the corresponding camera modules 1300a, 1300b, and 1300c via control signal lines CSLa, CSLb, and CSLc separated from each other.

[0205] In some embodiments, the control signal provided from the camera module controller 1414 to the plurality of camera modules 1300a, 1300b and 1300c may include mode information according to the mode signal. Based on the mode information, the plurality of camera modules 1300a, 1300b and 1300c may operate in the first operation mode and the second operation mode related to the sensing speed.

[0206] In the first operation mode, the plurality of camera modules 1300a, 1300b, and 1300c may generate image signals at a first speed (e.g., generate image signals at a first frame rate), encode the image signals at a second speed faster than the first speed (e.g., encode image signals at a second frame rate greater than the first frame rate), and transmit the encoded image signals to the application processor 1400. Here, the second speed may be 30 times faster than the first speed or less.

[0207] The application processor 1400 may store the received image signal (i.e., the encoded image signal) in the internal memory 1430 provided therein or the external memory 1600 outside the application processor 1400, and thereafter, read the encoded signal from the internal memory 1430 or the external memory 1600 and decode it, and may display image data generated based on the decoded image signal. For example, the image processors 1411 and 1412 in the image processing device 1410 may perform decoding, and may perform image processing on the decoded image signal.

[0208] In the second operation mode, the plurality of camera modules 1300a, 1300b, and 1300c generate image signals at a third speed slower than the first speed (e.g., generate image signals at a third frame rate lower than the first frame rate), and may transmit the image signals to the application processor 1400. The image signals provided to the application processor 1400 may be uncoded signals. The application processor 1400 may perform image processing on the received image signals or store the image signals in the internal memory 1430 or the external memory 1600.

[0209] The PMIC 1500 may provide power, such as a power supply voltage, to each of the plurality of camera modules 1300a, 1300b, and 1300c. For example, the PMIC 1500 may supply a first power to the camera module 1300a via a power signal line PSLa, supply a second power to the camera module 1300b via a power signal line PSLb, and supply a third power to the camera module 1300c via a power signal line PSLc under the control of the application processor 1400.

[0210] The PMIC 1500 may generate power corresponding to each of the plurality of camera modules 1300a, 1300b, and 1300c, and may adjust the power level in response to a power control signal PCON from the application processor 1400. The power control signal PCON may include a power adjustment signal for each operating mode of the plurality of camera modules 1300a, 1300b, and 1300c. For example, the operating mode may include a low power mode, and the power control signal PCON may include information related to the camera module operating in the low power mode and setting the power level. The water levels of the power provided to the plurality of camera modules 1300a, 1300b, and 1300c may be the same or different from each other. Likewise, the power level may be changed dynamically.

[0211] It should be understood that the example embodiments described herein should be considered to be descriptive only and not for limiting purposes. The description of features or aspects in each exemplary embodiment should typically be considered to be applicable to other similar features or aspects in other embodiments. Although example embodiments have been described with reference to the accompanying drawings, it will be understood by those of ordinary skill in the art that various changes in form and details may be made without departing from the spirit and scope defined by the appended claims and their equivalents.

Claims

1. An image sensor, comprising: a sensor substrate including a plurality of pixels configured to sense light; as well as a nanophotonic lens array configured to separate incident light based on color and focus the separated incident light onto the plurality of pixels, The nanophotonic lens array includes a plurality of super units periodically arranged in two dimensions, the plurality of super units include a first unit pattern and a second unit pattern, the first unit pattern and the second unit pattern respectively include a plurality of pixel corresponding areas corresponding to the plurality of pixels, wherein each of the plurality of pixel corresponding regions comprises a plurality of nanostructures, the plurality of nanostructures being configured to separate the incident light based on color and to focus the separated incident light onto the plurality of pixels, and The cross-sectional size or cross-sectional shape of a first nanostructure among the plurality of nanostructures included in the first unit pattern is different from the cross-sectional size or cross-sectional shape of a second nanostructure among the plurality of nanostructures included in the second unit pattern at a position corresponding to the first nanostructure.

2. The image sensor according to claim 1, wherein: A first cross-sectional size of the first nanostructure included in the first unit pattern is different from a second cross-sectional size of the second nanostructure included in the second unit pattern.

3. The image sensor according to claim 2, wherein: The first cross-sectional size and the second cross-sectional size are integer multiples of a minimum unit size.

4. The image sensor according to claim 2, wherein: The nanophotonic lens array includes a first portion, a second portion, and a third portion between the first portion and the second portion, and The first portion includes the first unit pattern, the second portion includes the second unit pattern, and the third portion includes the plurality of super units.

5. The image sensor according to claim 4, wherein: In each of the plurality of super cells, the first cell pattern and the second cell pattern are in an N×M array, wherein at least one of N and M is an integer greater than or equal to 2.

6. The image sensor according to claim 4, wherein: The nanophotonic lens array further includes a fourth portion between the third portion and the second portion, wherein the plurality of super cells include a plurality of first super cells periodically and two-dimensionally arranged in the third portion and a plurality of second super cells periodically and two-dimensionally arranged in the fourth portion, and The ratio between the first unit pattern and the second unit pattern included in each of the plurality of first super cells is different from the ratio between the first unit pattern and the second unit pattern included in each of the plurality of second super cells.

7. The image sensor according to claim 6, wherein: The first portion, the second portion, the third portion, and the fourth portion are arranged as concentric circles.

8. The image sensor according to claim 6, wherein: In each of the plurality of first super cells and the plurality of second super cells, the first cell pattern and the second cell pattern are arranged in a 2×2 array, and Each of the plurality of first super cells includes three first cell patterns and one second cell pattern, and each of the plurality of second super cells includes two first cell patterns and two second cell patterns.

9. The image sensor according to claim 8, wherein: The plurality of first super cells included in the third portion include a first array and a second array, wherein an arrangement of the first unit pattern and the second unit pattern in the first array is different from an arrangement of the first unit pattern and the second unit pattern in the second array, and The plurality of second super units included in the fourth portion include a third array and a fourth array, wherein an arrangement of the first unit pattern and the second unit pattern in the third array is different from an arrangement of the first unit pattern and the second unit pattern in the fourth array.

10. The image sensor according to claim 6, wherein: The nanophotonic lens array further includes a fifth portion between the fourth portion and the second portion, wherein the plurality of super units include a plurality of third super units periodically and two-dimensionally arranged in the fifth portion, and The ratio between the first unit pattern and the second unit pattern in each of the third super cells is different from the ratio between the first unit pattern and the second unit pattern in each of the first super cells and each of the second super cells.

11. The image sensor according to claim 10, wherein: A ratio of the first unit pattern is sequentially reduced and a ratio of the second unit pattern is increased from the first portion to the third portion, the fourth portion, the fifth portion, and the second portion.

12. The image sensor according to claim 10, wherein: In each of the plurality of first super cells, the plurality of second super cells, and the plurality of third super cells, the first cell pattern and the second cell pattern are arranged in a 2×2 array, and Each of the plurality of first super cells includes three first cell patterns and one second cell pattern, each of the plurality of second super cells includes two first cell patterns and two second cell patterns, and each of the plurality of third super cells includes one first cell pattern and three second cell patterns.

13. The image sensor according to claim 10, wherein: The multiple super cells in at least one of the third portion, the fourth portion and the fifth portion respectively include multiple cell patterns arranged in an N1×M1 array, and the multiple super cells in at least one portion different from the third portion, the fourth portion and the fifth portion respectively include multiple cell patterns arranged in an N2×M2 array, wherein N1 and N2 are positive integers different from each other or M1 and M2 are positive integers different from each other.

14. The image sensor according to claim 1, wherein: The first unit pattern and the second unit pattern include a third nanostructure, and a cross-sectional size or a cross-sectional shape of the third nanostructure is equal to or different from a cross-sectional size or a cross-sectional shape of the first nanostructure and the second nanostructure.

15. The image sensor according to claim 14, wherein: The nanophotonic lens array further includes a fourth nanostructure, a cross-sectional size or a cross-sectional shape of the fourth nanostructure being equal to or different from the cross-sectional size or the cross-sectional shape of the first nanostructure and the second nanostructure and different from the cross-sectional size or the cross-sectional shape of the third nanostructure.

16. The image sensor according to claim 15, wherein: a first cross-sectional dimension of the first nanostructure is different from a second cross-sectional dimension of the second nanostructure, and The third cross-sectional size of the third nanostructure is equal to or different from the first cross-sectional size and the second cross-sectional size, and the fourth cross-sectional size of the fourth nanostructure is equal to or different from the first cross-sectional size and the second cross-sectional size and different from the third cross-sectional size.

17. The image sensor according to claim 15, wherein: The nanophotonic lens array further includes a third unit pattern and a fourth unit pattern, the third unit pattern includes the first nanostructure and the fourth nanostructure respectively, and the fourth unit pattern includes the second nanostructure and the fourth nanostructure respectively.

18. The image sensor according to claim 17, wherein: The nanophotonic lens array also includes a plurality of super units, in which unit patterns selected from the first unit pattern, the second unit pattern, the third unit pattern, and the fourth unit pattern are arranged in an N×M array, where at least one of N and M is an integer greater than or equal to 2.

19. The image sensor according to claim 1, wherein: The plurality of pixels include a plurality of unit pixel patterns including a first pixel, a second pixel, a third pixel, and a fourth pixel, respectively. wherein the plurality of pixel corresponding regions included in each of the first unit pattern and the second unit pattern include a first pixel corresponding region corresponding to the first pixel, a second pixel corresponding region corresponding to the second pixel, a third pixel corresponding region corresponding to the third pixel, and a fourth pixel corresponding region corresponding to the fourth pixel, and The cross-sectional size, cross-sectional shape and height of each of the plurality of nanostructures and the arrangement period and arrangement shape of the plurality of nanostructures are determined so that, in the incident light incident on the first pixel corresponding area, the second pixel corresponding area, the third pixel corresponding area and the fourth pixel corresponding area, light of a first band is separated and converged on the first pixel, light of a second band different from the first band is separated and converged on the second pixel and the third pixel, and light of a third band different from the first band and the second band is separated and converged on the fourth pixel.

20. An electronic device comprising: a lens assembly configured to form an optical image of a subject; an image sensor configured to convert the optical image formed by the lens assembly into an electrical signal; as well as a processor configured to process signals generated by the image sensor, Wherein, the image sensor comprises: a sensor substrate including a plurality of pixels configured to sense light; and a nanophotonic lens array configured to separate incident light based on color and focus the separated incident light onto the plurality of pixels, The nanophotonic lens array includes a plurality of super units periodically arranged in two dimensions, the plurality of super units include a first unit pattern and a second unit pattern, the first unit pattern and the second unit pattern respectively include a plurality of pixel corresponding areas corresponding to the plurality of pixels, wherein each of the plurality of pixel corresponding regions comprises a plurality of nanostructures, the plurality of nanostructures being configured to separate the incident light based on color and to focus the separated incident light onto the plurality of pixels, and The cross-sectional size or cross-sectional shape of a first nanostructure among the plurality of nanostructures included in the first unit pattern is different from the cross-sectional size or cross-sectional shape of a second nanostructure among the plurality of nanostructures included in the second unit pattern at a position corresponding to the first nanostructure.

Images