Method for removing oxides and / or sulfides on metal surface

Abstract

The invention relates to the technical field of metal surface oxide and / or sulfide removal, in particular to a metal surface oxide and / or sulfide removal method which can effectively remove metal surface oxide and / or sulfide and is simple and easy to operate. A metal surface oxide and / or sulfide removing method comprises the steps that a to-be-treated piece is provided and comprises a metal part, and metal oxide and / or metal sulfide are / is formed on the surface of the metal part; and an infrared light source is adopted to irradiate the to-be-processed part containing the metal part so as to remove the metal oxide and / or the metal sulfide on the surface of the metal part.

Description

Technical Field

[0001] The present application relates to the technical field of removing oxides and / or sulfides on metal surfaces, and in particular to a method for removing oxides and / or sulfides on metal surfaces. Background Art

[0002] At present, some metal materials or components will react with oxygen, sulfur dioxide and other gases in the air during use, forming a layer of metal oxide and / or metal sulfide on the surface of these metal materials or components, which will affect the original properties and functions of these metal materials or components, and seriously affect the use and function of these metal materials or components.

[0003] For example, in the field of solar cells, metal grid lines are usually made of metal materials such as silver and / or aluminum, and are produced through processes such as screen printing. After long-term storage, exposure to air or use, the metal grid lines may undergo oxidation and / or sulfidation, thereby reducing the efficiency of the solar cells. Summary of the invention

[0004] Based on this, some embodiments of the present application provide a method for removing oxides and / or sulfides on the surface of a metal, which can effectively remove oxides and / or sulfides on the surface of a metal, and the method is simple and easy to operate.

[0005] In a first aspect, a method for removing oxides and / or sulfides on a metal surface is provided, comprising:

[0006] Providing a workpiece to be processed, the workpiece to be processed comprises a metal part, a metal oxide and / or a metal sulfide is formed on the surface of the metal part, the metal part comprises metal silver and / or metal aluminum, the metal oxide comprises silver oxide and / or aluminum oxide, and the metal sulfide comprises silver sulfide and / or aluminum sulfide;

[0007] An infrared light source is used to irradiate the workpiece to be processed including the metal component to remove metal oxides and / or metal sulfides on the surface of the metal component.

[0008] Optionally, the infrared light source has a wavelength range of 700nm to 1500nm.

[0009] Optionally, the infrared light source is a surface light source, and the distance between the surface light source and the metal component is 3 mm to 3 cm.

[0010] Optionally, the power of the infrared light source is 50W~200W, and the irradiation time is 0.5s~10s.

[0011] Optionally, the heating temperature generated by the irradiation is 80°C to 150°C.

[0012] Optionally, the irradiation is performed in an air atmosphere or a protective atmosphere.

[0013] Optionally, the gas used in the protective atmosphere includes at least one of nitrogen, argon and helium.

[0014] Optionally, when an infrared light source is used to irradiate the workpiece to be processed including the metal component to remove metal oxides and / or metal sulfides on the surface of the metal component, the method further includes:

[0015] The workpiece to be processed including the metal component is heated by contacting with a heat source, so that surface oxides and / or sulfides of the metal component are removed at a preset heating temperature;

[0016] Wherein, the preset heating temperature is greater than 35°C and less than 200°C.

[0017] Optionally, the preset heating temperature is 80°C~150°C.

[0018] Optionally, the workpiece to be processed is a solar cell panel, and the metal component is a metal grid wire.

[0019] Optionally, the workpiece to be processed including the metal component is irradiated with an infrared light source to remove metal oxides and / or metal sulfides on the surface of the metal component, including:

[0020] Assembling a surface-emitting infrared light source;

[0021] forming a reflective layer on the back side of the light emitting surface of the surface-emitting infrared light source to reflect the infrared light emitted by the surface-emitting infrared light source;

[0022] The workpiece to be processed is fixed on the light-emitting side of the surface-emitting infrared light source, and the workpiece to be processed including the metal component is irradiated with the emitted light of the surface-emitting infrared light source.

[0023] Optionally, assembling a surface-emitting infrared light source includes:

[0024] Arrange a plurality of near-infrared lamp tubes into a surface light source, and reserve a light outlet on one side of the surface light source, wherein one side of the light outlet constitutes a light outlet side of the surface-emitting infrared light source;

[0025] A reflective layer is formed on the back side of the light emitting surface of the surface-emitting infrared light source to reflect the infrared light emitted by the surface-emitting infrared light source, comprising:

[0026] The reflecting layer is formed on the inner wall of each infrared lamp tube to reflect the infrared light emitted by the surface-emitting infrared light source;

[0027] The workpiece to be processed is fixed on the light-emitting side of the surface-emitting infrared light source, and the workpiece to be processed including the metal component is irradiated with the emitted light of the surface-emitting infrared light source, including:

[0028] Using a support member to support the workpiece to be processed;

[0029] The surface-emitting infrared light source is fixed above the workpiece to be processed, and the light-emitting side of the surface-emitting infrared light source is directed toward the metal part of the workpiece to be processed, so that the infrared light emitted by the surface-emitting infrared light source is used to irradiate the workpiece to be processed including the metal part.

[0030] Optionally, the method further comprises:

[0031] The heating platform is used as a support to support the workpiece to be processed, and when the surface-emitting infrared light source is used to irradiate the workpiece to be processed including the metal component to remove metal oxides and / or metal sulfides on the surface of the metal component, the heating platform is used to heat the workpiece to be processed including the metal component so that the surface oxides and / or sulfides of the metal component are removed at a preset heating temperature;

[0032] Wherein, the preset heating temperature is greater than 35°C and less than 200°C.

[0033] The beneficial technical effects of the method for removing metal surface oxides and / or sulfides provided in the present application are as follows:

[0034] By irradiating the workpiece to be processed containing a metal component with an infrared light source, the metal oxide and / or metal sulfide on the surface of the metal component can be removed, so that the metal component is restored to its original state. That is, by irradiating the workpiece to be processed containing a metal component with an infrared light source, the oxygen element and the sulfur element in the metal oxide and / or metal sulfide on the surface of the metal component disappear, and the metal component is restored to its original state. This method can effectively remove oxides and / or sulfides on the metal surface, and the method is simple and easy to operate.

[0035] Compared with the related art of sintering the metal grid lines on solar cells to remove surface oxides and / or sulfides, this method does not require high-temperature heating and professional operation, can be completed in the air, and can quickly restore the conductivity of the metal grid lines, thereby reducing energy consumption and costs, and is environmentally friendly and pollution-free.

[0036] In addition, this method can also be used in other fields, such as metal surface treatment and processing and other technical fields, and has a wide range of applications. BRIEF DESCRIPTION OF THE DRAWINGS

[0037] Figure 1A schematic flow chart of a method for removing oxides and / or sulfides from metal surfaces provided in an embodiment of the present application. DETAILED DESCRIPTION

[0038] In order to make the above-mentioned purposes, features and advantages of the present application more obvious and easy to understand, the specific implementation methods of the present application are described in detail below in conjunction with the accompanying drawings. In the following description, many specific details are set forth to facilitate a full understanding of the present application. However, the present application can be implemented in many other ways different from those described herein, and those skilled in the art can make similar improvements without violating the connotation of the present application, so the present application is not limited by the specific embodiments disclosed below.

[0039] Unless the context requires otherwise, throughout the specification and claims, the term "including" is to be interpreted as an open, inclusive meaning, that is, "including, but not limited to". In the description of the specification, the terms "one embodiment", "some embodiments", "exemplary embodiments", "exemplarily" or "some examples" and the like are intended to indicate that specific features, structures, materials or characteristics associated with the embodiment or example are included in at least one embodiment or example of the present disclosure. The schematic representation of the above terms does not necessarily refer to the same embodiment or example. In addition, the specific features, structures, materials or characteristics may be included in any one or more embodiments or examples in any appropriate manner.

[0040] Exemplary embodiments are described herein with reference to cross-sectional views and / or plan views that are idealized exemplary drawings. In the drawings, the thickness of layers and regions are exaggerated for clarity. Therefore, variations in shape relative to the drawings due to, for example, manufacturing techniques and / or tolerances are conceivable. Therefore, the exemplary embodiments should not be interpreted as being limited to the shapes of the regions shown herein, but include shape deviations due to, for example, manufacturing. For example, an etched region shown as a rectangle will typically have curved features. Therefore, the regions shown in the drawings are schematic in nature, and their shapes are not intended to illustrate the actual shape of regions of the device, and are not intended to limit the scope of the exemplary embodiments.

[0041] “A and / or B” includes the following three combinations: A only, B only, and a combination of A and B.

[0042] Herein, unless otherwise specified, "one or more" means one or more than or equal to two.

[0043] In this document, "for example", "such as", "example", "for example", etc. are used for descriptive purposes, indicating that the previous and subsequent different technical solutions are related in terms of the content covered, but should not be understood as limiting the previous technical solution, nor can they be understood as limiting the scope of protection of this document. In this document, unless otherwise specified, A (such as B) means that B is a non-limiting example of A, and it can be understood that A is not limited to B.

[0044] In this article, "optionally", "optional", and "optional" mean optional, that is, any one of the two parallel options of "yes" or "no". If there are multiple "options" in a technical solution, unless otherwise specified and there is no contradiction or mutual restriction, each "option" is independent.

[0045] Herein, descriptions such as "optionally contain", "optionally include", etc., mean "contain or not contain". "Optional component X" means component X exists or does not exist, or means containing or not containing the component X.

[0046] In this document, the terms "first", "second", etc. in "the first aspect", "the second aspect", etc. are used for descriptive purposes only and cannot be understood as indicating or implying relative importance or quantity, nor can they be understood as implicitly indicating the importance or quantity of the indicated technical features.

[0047] It should be noted that when an element is referred to as being "fixed to" or "disposed on" another element, it may be directly on the other element or there may be a central element. When an element is considered to be "connected to" another element, it may be directly connected to the other element or there may be a central element at the same time. The terms "vertical", "horizontal", "upper", "lower", "left", "right" and similar expressions used herein are for illustrative purposes only and are not intended to be the only implementation method.

[0048] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as those commonly understood by those skilled in the art to which this application belongs. The terms used herein in the specification of this application are only for the purpose of describing specific embodiments and are not intended to limit this application.

[0049] In this article, the technical features described in an open manner include closed technical solutions composed of the listed features, and also include open technical solutions containing the listed features.

[0050] In this document, "at least one" means more than one, such as one, two and more than two. "Multiple" or "several" means at least two, such as two, three, etc., and "multilayer" means at least two layers, such as two layers, three layers, etc., unless otherwise clearly and specifically defined. In the description of this application, "several" means at least one, such as one, two, etc., unless otherwise clearly and specifically defined.

[0051] Herein, when it comes to a numerical interval (i.e., a numerical range), unless otherwise specified, the distribution of the optional numerical values ​​within the numerical interval is considered to be continuous and includes the two numerical endpoints (i.e., the minimum and maximum values) of the numerical interval, and each numerical value between the two numerical endpoints. Unless otherwise specified, when a numerical interval only refers to integers within the numerical interval, including the two endpoint integers of the numerical range, and each integer between the two endpoints, is equivalent to directly listing each integer. When multiple numerical ranges are provided to describe features or characteristics, these numerical ranges can be combined. In other words, unless otherwise specified, the numerical ranges disclosed herein should be understood to include any and all sub-ranges included therein. The "numerical value" in the numerical interval can be any quantitative value, such as a number, a percentage, a ratio, etc. "Numerical interval" allows broadly including numerical interval types such as percentage intervals, ratio intervals, and ratio intervals.

[0052] In this article, the percentage content, unless otherwise specified, refers to mass percentage for solid-liquid mixing and solid-solid mixing, and volume percentage for liquid-liquid mixing.

[0053] In this article, when it comes to percentage concentration, unless otherwise specified, it refers to the final concentration. The final concentration refers to the proportion of the added component in the system after the addition of the component.

[0054] As used herein, %(w / w) and wt% both refer to weight percentage, %(v / v) refers to volume percentage, and %(w / v) refers to mass volume percentage.

[0055] In this article, when it comes to temperature parameters, unless otherwise specified, both constant temperature treatment and treatment within a certain temperature range are allowed. The constant temperature treatment allows the temperature to fluctuate within the accuracy range of instrument control.

[0056] Herein, the term "room temperature" or "normal temperature" generally refers to 4°C to 35°C, for example, 20°C ± 5°C. In some embodiments herein, "room temperature" or "normal temperature" refers to 10°C to 30°C. In some embodiments herein, "room temperature" or "normal temperature" refers to 20°C to 30°C.

[0057] As used in this article, fill factor (FF) refers to the ratio of the actual maximum achievable power (Pm or Vmp * Jmp) to the theoretical (not actually achievable) power (Jsc * Voc). Therefore, FF can be determined by the following formula:

[0058] FF = (Vmp * Jmp) / (Jsc * Voc)

[0059] Where Jmp and Vmp represent the current density and voltage at the maximum power point (Pm), which is obtained by changing the resistance in the circuit until J * V is the maximum value; Jsc and Voc represent the short-circuit current and open-circuit voltage, respectively. Fill factor is a key parameter for evaluating solar cells. Commercial solar cells usually have a fill factor of about 60% or more.

[0060] As used herein, open circuit voltage (Voc) is the potential difference between the anode and cathode of the device with no external load connected.

[0061] The power conversion efficiency (PCE) of a solar cell used in this article refers to the percentage of power converted from absorbed light to electrical energy. The power conversion efficiency (PCE) of a solar cell can be measured by the incident light irradiance (E: W / m 2 ) and the surface area of ​​the solar cell (Ac:m 2 ) divided by the maximum power point (Pm). STC usually refers to the temperature of 25℃ and the irradiance of 1000 W / m 2 , the spectrum of air quality 1.5 (AM1.5).

[0062] In order to address the problem that the metal grid lines of current solar cells undergo oxidation and / or sulfidation after long-term storage, exposure to air or use, thereby reducing the efficiency of the solar cells, the related technology mainly removes the metal oxides and / or metal sulfides on the surface of the metal grid lines by repeated sintering in a sintering furnace. This process needs to be carried out in the presence of a protective gas, and the sintering temperature is as high as 400°C. The operation is complicated and requires professional personnel to operate. It also consumes a lot of heat energy and may even produce waste gas, which is costly and environmentally unfriendly.

[0063] In view of the problem that a layer of metal oxide and / or metal sulfide is formed on the surface of metal materials or components in the related art, thereby affecting the original properties and functions of these metal materials or components, the specific implementation methods of the present application are described as follows:

[0064] Some embodiments of the present application provide a method for removing oxides and / or sulfides on metal surfaces, such as Figure 1 As shown, the removal method includes the following steps S11)~S12):

[0065] S11), providing a workpiece to be processed, the workpiece to be processed includes a metal part, a metal oxide and / or a metal sulfide is formed on the surface of the metal part, the metal part includes metal silver and / or metal aluminum, the metal oxide includes silver oxide and / or aluminum oxide, and the metal sulfide includes silver sulfide and / or aluminum sulfide;

[0066] The workpiece to be processed may be any component or device including a metal part, and the metal part may be any part arranged on the workpiece to be processed by deposition, printing, electroplating or installation.

[0067] For example, taking the object to be processed as a solar cell as an example, the metal component may be a metal grid line.

[0068] S12), using an infrared light source to irradiate the workpiece to be processed including a metal component to remove metal oxides and / or metal sulfides on the surface of the metal component.

[0069] Infrared light can be divided into near-infrared light, mid-infrared light and far-infrared light according to its wavelength. The wavelength of near-infrared light is 780nm~1400nm, the wavelength of mid-infrared light is 1400nm~3000nm, and the wavelength of far-infrared light is above 3000nm.

[0070] As the name implies, infrared light source refers to a light source used to generate infrared radiation. According to the different wavelengths of infrared radiation light, the corresponding infrared light sources can be called near-infrared light source, mid-infrared light source and far-infrared light source.

[0071] The infrared light source has good penetrating effect. By using the infrared light source to irradiate the workpiece to be processed including metal parts, the infrared light source can irradiate the metal oxide and / or metal sulfide, thereby removing the oxygen and sulfur elements in the metal oxide and / or metal sulfide.

[0072] In the method for removing oxides and / or sulfides on the metal surface provided in the embodiments of the present application, the inventor unexpectedly discovered that by irradiating the workpiece to be processed comprising a metal component with an infrared light source, the metal oxides and / or metal sulfides on the surface of the metal component can be removed, so that the metal component is restored to its original state, that is, by irradiating the metal oxides and / or metal sulfides on the workpiece to be processed comprising a metal component with an infrared light source, the oxygen elements and sulfur elements in the metal oxides and / or metal sulfides on the surface of the metal component disappear, and the metal component is restored to its original state; this method can effectively remove oxides and / or sulfides on the metal surface, and the method is simple and easy to operate.

[0073] Compared with the related art of sintering the metal grid lines on solar cells to remove surface oxides and / or sulfides, this method does not require high-temperature heating and professional operation, can be completed in the air, and can quickly restore the conductivity of the metal grid lines, thereby reducing energy consumption and costs, and is environmentally friendly and pollution-free.

[0074] In addition, this method can also be used in other fields, such as metal surface treatment and processing and other technical fields, and has a wide range of applications.

[0075] In some embodiments, the infrared light source has a wavelength range of 700nm to 1500nm.

[0076] In these embodiments, the removal effect can be improved, the irradiation time can be reduced, and energy can be further saved.

[0077] In some embodiments, the infrared light source has a wavelength range of 900nm to 1300nm.

[0078] The peak value of the infrared light source is 1100nm.

[0079] In some embodiments, the infrared light source is a surface light source, and the distance between the surface light source and the surface of the metal component is 3 mm to 3 cm.

[0080] In these embodiments, the surface of the metal component can be better irradiated, thereby improving the uniformity of removing oxides and / or sulfides on the surface of the metal component.

[0081] In some embodiments, the power of the infrared light source is 50W~200W, and the irradiation time is 0.5s~10s.

[0082] In these embodiments, the infrared light source can be used to remove metal oxides and / or sulfides on the surface of the metal component as completely as possible.

[0083] In some embodiments, the heating temperature generated by the irradiation is 80°C-150°C.

[0084] In these embodiments, it is found through detection that under the irradiation of the infrared light source, heat is simultaneously generated to heat the metal component, and the dual effects of heating and irradiation promote the removal of metal oxides and / or metal sulfides on the surface of the metal component.

[0085] In some embodiments, the irradiation is performed in an air atmosphere or a protective atmosphere.

[0086] In these embodiments, the metal oxides and / or metal sulfides on the surface of the metal parts can be removed. In particular, when the removal is performed in a protective atmosphere, the air can be further isolated to improve the removal efficiency.

[0087] In some embodiments, the gas used in the protective atmosphere includes at least one of nitrogen, argon and helium.

[0088] In some embodiments, the gas used in the protective atmosphere includes: nitrogen.

[0089] In some embodiments, when an infrared light source is used to irradiate a workpiece to be processed including a metal component to remove metal oxides and / or metal sulfides on the surface of the metal component, the removal method further includes:

[0090] The workpiece to be processed, which includes a metal component, is heated by contact with a heat source so that surface oxides and / or sulfides of the metal component are removed at a preset heating temperature; wherein the preset heating temperature is greater than 35°C and less than 200°C.

[0091] In these embodiments, by using a heat source to heat the metal component, the removal effect can be improved and the illumination time can be reduced.

[0092] In some embodiments, the preset heating temperature is 80°C to 150°C.

[0093] In these embodiments, at the preset heating temperature, the removal effect can be maximized and the lighting time can be reduced.

[0094] In some embodiments, the object to be processed is a solar cell, and the metal component is a metal grid line.

[0095] In these embodiments, metal oxides and / or metal sulfides on the surfaces of metal grid lines can be effectively removed, thereby improving the efficiency of solar cells.

[0096] In some embodiments, an infrared light source is used to irradiate a workpiece to be processed including a metal component to remove metal oxides and / or metal sulfides on the surface of the metal component, including:

[0097] Assembling a surface-emitting infrared light source;

[0098] forming a reflective layer on the back side of the light emitting surface of the surface-emitting infrared light source to reflect the infrared light emitted by the surface-emitting infrared light source;

[0099] The workpiece to be processed is fixed on the light-emitting side of a surface-emitting infrared light source, and the workpiece to be processed including a metal component is irradiated with the emitted light of the surface-emitting infrared light source.

[0100] In these embodiments, by assembling a surface-emitting infrared light source, the surface-emitting infrared light source can be used to uniformly irradiate the workpiece to be processed including the metal component, thereby improving the removal effect of the metal oxide and / or metal sulfide.

[0101] In some embodiments, a surface-emitting infrared light source is assembled, comprising:

[0102] Arrange a plurality of infrared lamp tubes into a surface light source, and reserve a light outlet on one side of the surface light source, the light outlet side constituting the light outlet side of the surface emitting infrared light source;

[0103] A reflective layer is formed on the back side of the light emitting surface of the surface-emitting infrared light source to reflect the infrared light emitted by the surface-emitting infrared light source, comprising:

[0104] A reflective layer is formed on the inner wall of each infrared lamp tube to reflect the infrared light emitted by the surface-emitting infrared light source;

[0105] The workpiece to be processed is fixed on the light-emitting side of a surface-emitting infrared light source, and the workpiece to be processed including a metal part is irradiated with the emitted light of the surface-emitting infrared light source, including:

[0106] Using a support member to support the workpiece;

[0107] A surface-emitting infrared light source is fixed above the workpiece to be processed, and the light-emitting side of the surface-emitting infrared light source is directed toward the metal part of the workpiece to be processed, so that the workpiece to be processed including the metal part is irradiated with infrared light emitted by the surface-emitting infrared light source.

[0108] Among them, making the light-emitting side of the surface-emitting infrared light source face the metal part of the workpiece to be treated means that the vertical distances from each light-emitting point on the light-emitting side of the surface-emitting infrared light source (herein, they can be regarded as each point on the light-emitting surface of the surface-emitting infrared light source, and the light-emitting surface of the surface-emitting infrared light source can be regarded as the plane formed by the arrangement of the parts of the lamp tubes closest to the workpiece to be treated) to the surface of the metal part of the workpiece to be treated are basically the same, so that uniform infrared light irradiation can be formed at various places on the surface of the metal part of the workpiece to be treated.

[0109] In these embodiments, a support member is provided to support the workpiece to be treated, a surface-emitting infrared light source is fixed above the workpiece to be treated, and the light-emitting side of the surface-emitting infrared light source is directed toward the metal part of the workpiece to be treated, so that the surface of the metal part is irradiated with infrared light emitted by the surface-emitting infrared light source, thereby achieving uniform irradiation and improving the uniformity of removal of metal oxides and / or metal sulfides on the surface of the metal part.

[0110] In some embodiments, the vertical distance between each light-emitting point on the light-emitting side of the surface-emitting infrared light source and the surface of the metal component of the workpiece to be processed can be 3 mm to 3 cm.

[0111] In these embodiments, the infrared light irradiation intensity at various locations on the surface of the metal component to be processed can be made as close as possible, thereby improving the uniformity of removing metal oxides and / or sulfides on the surface of the metal component.

[0112] In some embodiments, the removal method further comprises:

[0113] The heating table is used as a support to support the workpiece to be processed. When a surface-emitting infrared light source is used to irradiate the workpiece to be processed including a metal component to remove metal oxides and / or metal sulfides on the surface of the metal component, the heating table is used to heat the workpiece to be processed including the metal component so that the surface oxides and / or sulfides of the metal component are removed at a preset heating temperature; wherein the preset heating temperature is greater than 35°C and less than 200°C.

[0114] In these embodiments, the heating platform can be used to support the workpiece and simultaneously heat it, so that the metal oxides and / or sulfides on the surface of the metal parts can be removed under the dual effects of heating and light, thereby improving the removal efficiency.

[0115] In order to objectively evaluate the technical effects of the embodiments of the present application, the present application will be described in detail and exemplarily through the following embodiments.

[0116] In the following examples, all raw materials can be purchased from commercial sources, and in order to maintain the reliability of the experiments, the raw materials used in the following examples all have the same physical and chemical parameters or are prepared by the same processing method.

[0117] Example 1

[0118] This embodiment provides a method for removing oxidation or sulfurization of metal gate lines, and the specific steps are as follows:

[0119] (1) Prepare an illumination device, which includes 12 lamp tubes. The 12 lamp tubes are arranged in parallel to form a surface light source. The lamp tubes use infrared lamp tubes with a wavelength of 700nm to 1500nm, and the reflective layer of the lamp tubes is a gold-plated layer.

[0120] (2) Place the cell to be processed under the lighting device and keep the distance between the light emitting surface of the lighting device and the grid line surface on the cell at 3 mm.

[0121] (3) Turn on the lamp, set the lamp power to 50W, and the lamp irradiation time to 10s.

[0122] Example 2

[0123] The method for removing oxidation or sulfidation of the metal gate line in Example 2 is substantially the same as the method for removing oxidation or sulfidation of the metal gate line in Example 1, except that:

[0124] In step (2), the distance between the light emitting surface of the illumination device and the solar cell is 3 cm;

[0125] In step (3), the power of the lamp is 150 W and the irradiation time is 5 s.

[0126] Example 3

[0127] The method for removing oxidation or sulfidation of metal gate lines provided in Example 3 is substantially the same as the method for removing oxidation or sulfidation of metal gate lines provided in Example 1, except that:

[0128] In step (2), the distance between the light emitting surface of the illumination device and the solar cell is 1 cm;

[0129] In step (3), the power of the lamp is 200 W and the irradiation time is 2 s.

[0130] Example 4

[0131] The method for removing oxidation or sulfurization of the metal gate line in Example 4 is substantially the same as the method for removing oxidation or sulfurization of the metal gate line in Example 1, except that:

[0132] In step (3), a heating table is also used to heat the battery cell, and the heating temperature is 80°C.

[0133] Example 5

[0134] The method for preparing the solar cell in Example 5 is substantially the same as the method for preparing the solar cell in Example 1, except that:

[0135] In step (3), a heating table is also used to heat the battery cell, and the heating temperature is 150°C.

[0136] Example 6

[0137] The method for preparing the solar cell in Example 6 is substantially the same as the method for preparing the solar cell in Example 1, except that:

[0138] In step (3), a heating table is also used to heat the battery cell, and the heating temperature is 120°C.

[0139] Example 7

[0140] The method for preparing the solar cell in Example 7 is substantially the same as the method for preparing the solar cell in Example 1, except that:

[0141] The entire irradiation process was carried out under nitrogen protection.

[0142] Example 8

[0143] The method for preparing the solar cell in Example 8 is substantially the same as the method for preparing the solar cell in Example 1, except that:

[0144] The entire irradiation process is carried out under nitrogen protection. At the same time, in step (3), a heating table is used to heat the battery cell at a temperature of 120°C.

[0145] Test Case

[0146] 1. By observing the changes of the metal grid lines of the battery cells provided in Examples 1 to 8 before and after illumination, it was found that: before illumination, the metal grid lines of the battery cells provided in Examples 1 to 8 were yellow, while after illumination, the metal grid lines of the battery cells provided in Examples 1 to 8 turned into silver-white, indicating that the metal oxides and sulfides on the surface of the metal grid lines of the battery cells were repaired and turned into the color of the metal itself.

[0147] 2. The performance of the cells provided in Examples 1 to 8 was tested before and after illumination. The specific test results are shown in Table 1 below:

[0148] Table 1

[0149]

[0150] In Table 1, ΔPCE represents the increase in the photoelectric conversion efficiency of the battery cell after illumination compared with before illumination, which is equal to the difference between the photoelectric conversion efficiency after illumination and the photoelectric conversion efficiency before illumination, Δvoc represents the increase in the open circuit voltage of the battery cell after illumination compared with before illumination, which is equal to the difference between the open circuit voltage after illumination and the open circuit voltage before illumination, ΔJsc represents the increase in the short-circuit current of the battery cell after illumination compared with before illumination, which is equal to the difference between the short-circuit current after illumination and the short-circuit current before illumination, ΔFF represents the increase in the fill factor of the battery cell after illumination compared with before illumination, which is equal to the difference between the fill factor after illumination and the fill factor before illumination.

[0151] As shown in Table 1, the metal oxide and / or metal sulfide on the surface of the metal grid line can be effectively removed by near-infrared light irradiation treatment, thereby improving the conductivity of the metal grid line and thus improving the photoelectric conversion efficiency of the cell. In particular, the removal effect of the metal oxide and / or metal sulfide can be further improved by heating the metal grid line while irradiating the metal grid line; and the removal effect of the metal oxide and / or metal sulfide can also be further improved by placing the cell under inert gas protection while irradiating the light; and under the triple treatment of inert gas protection, heating treatment and irradiation, the removal effect of the metal oxide and / or metal sulfide is the best, which can maximize the photoelectric conversion efficiency of the cell.

[0152] The technical features of the above-described embodiments may be arbitrarily combined. To make the description concise, not all possible combinations of the technical features in the above-described embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0153] The above-described embodiments only express several implementation methods of the present application, and the descriptions thereof are relatively specific and detailed, but they cannot be construed as limiting the scope of the patent application. It should be pointed out that, for a person of ordinary skill in the art, several variations and improvements can be made without departing from the concept of the present application, and these all belong to the protection scope of the present application. Therefore, the protection scope of the patent application shall be subject to the attached claims.

Claims

1. A method for removing oxides and / or sulfides on metal surfaces, characterized in that: include: Providing a workpiece to be processed, the workpiece to be processed comprises a metal part, a metal oxide and / or a metal sulfide is formed on the surface of the metal part, the metal part comprises metal silver and / or metal aluminum, the metal oxide comprises silver oxide and / or aluminum oxide, and the metal sulfide comprises silver sulfide and / or aluminum sulfide; An infrared light source is used to irradiate the workpiece to be processed including the metal component to remove metal oxides and / or metal sulfides on the surface of the metal component.

2. The method for removing oxides and / or sulfides on metal surfaces according to claim 1, characterized in that: The wavelength range of the infrared light source is 700nm~1500nm.

3. The method for removing oxides and / or sulfides on metal surfaces according to claim 1, characterized in that: The infrared light source is a surface light source, and the distance between the surface light source and the surface of the metal component is 3 mm to 3 cm.

4. The method for removing oxides and / or sulfides on metal surfaces according to claim 1, characterized in that: The power of the infrared light source is 50W~200W, and the irradiation time is 0.5s~10s.

5. The method for removing oxides and / or sulfides on metal surfaces according to claim 1, characterized in that: The heating temperature generated by the irradiation is 80°C to 150°C.

6. The method for removing oxides and / or sulfides on metal surfaces according to claim 1, characterized in that: The irradiation is performed in an air atmosphere or a protective atmosphere.

7. The method for removing oxides and / or sulfides on metal surfaces according to claim 6, characterized in that: The gas used in the protective atmosphere includes at least one of nitrogen, argon and helium.

8. The method for removing oxides and / or sulfides on metal surfaces according to claim 1, characterized in that: When the workpiece to be processed including the metal component is irradiated with an infrared light source to remove metal oxides and / or metal sulfides on the surface of the metal component, the method further comprises: The workpiece to be processed including the metal component is heated by contacting with a heat source, so that surface oxides and / or sulfides of the metal component are removed at a preset heating temperature; Wherein, the preset heating temperature is greater than 35°C and less than 200°C.

9. The method for removing oxides and / or sulfides on metal surfaces according to claim 8, characterized in that: The preset heating temperature is 80°C to 150°C.

10. The method for removing oxides and / or sulfides on metal surfaces according to any one of claims 1 to 9, characterized in that: The workpiece to be processed is a solar cell panel, and the metal component is a metal grid line.

11. The method for removing oxides and / or sulfides on metal surfaces according to claim 10, characterized in that: The workpiece to be processed including the metal component is irradiated with an infrared light source to remove metal oxides and / or metal sulfides on the surface of the metal component, including: Assembling a surface-emitting infrared light source; forming a reflective layer on the back side of the light emitting surface of the surface-emitting infrared light source to reflect the infrared light emitted by the surface-emitting infrared light source; The workpiece to be processed is fixed on the light-emitting side of the surface-emitting infrared light source, and the workpiece to be processed including the metal component is irradiated with the emitted light of the surface-emitting infrared light source.

12. The method for removing oxides and / or sulfides on metal surfaces according to claim 11, characterized in that: Assembled surface emitting infrared light source, including: Arrange a plurality of infrared lamp tubes into a surface light source, and reserve a light outlet on one side of the surface light source, wherein one side of the light outlet constitutes a light outlet side of the surface-emitting infrared light source; A reflective layer is formed on the back side of the light emitting surface of the surface-emitting infrared light source to reflect the infrared light emitted by the surface-emitting infrared light source, comprising: The reflecting layer is formed on the inner wall of each infrared lamp tube to reflect the infrared light emitted by the surface-emitting infrared light source; The workpiece to be processed is fixed on the light-emitting side of the surface-emitting infrared light source, and the workpiece to be processed including the metal component is irradiated with the emitted light of the surface-emitting infrared light source, including: Using a support member to support the workpiece to be processed; The surface-emitting infrared light source is fixed above the workpiece to be processed, and the light-emitting side of the surface-emitting infrared light source is directed toward the metal part of the workpiece to be processed, so that the infrared light emitted by the surface-emitting infrared light source is used to irradiate the workpiece to be processed including the metal part.

13. The method for removing oxides and / or sulfides on metal surfaces according to claim 12, characterized in that: The method further comprises: The heating platform is used as a support to support the workpiece to be processed, and when the surface-emitting infrared light source is used to irradiate the workpiece to be processed including the metal component to remove metal oxides and / or metal sulfides on the surface of the metal component, the heating platform is used to heat the workpiece to be processed including the metal component so that the surface oxides and / or sulfides of the metal component are removed at a preset heating temperature; Wherein, the preset heating temperature is greater than 35°C and less than 200°C.

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