Ultrasonic sensing component assembly and ultrasonic sensing component

Abstract

An ultrasonic sensing component assembly comprises a semiconductor substrate and a plurality of ultrasonic sensing components. The ultrasonic sensing assemblies are formed on the semiconductor substrate in an array mode, and each ultrasonic sensing assembly is formed in a sensing area of the semiconductor substrate. Each ultrasonic sensing assembly comprises a first sensing module, a second sensing module, four connecting pads and four welding pads. The first sensing module comprises a first sensing unit and a second sensing unit which are connected in parallel. The second sensing module comprises a third sensing unit and a fourth sensing unit which are connected in parallel. Each connecting pad is located in a through hole penetrating through the first surface and the second surface of the sensing area. The four welding pads are located on the second face of the sensing area and are overlapped with vertical projections of the first sensing unit, the second sensing unit, the third sensing unit and the fourth sensing unit respectively.

Description

Technical Field

[0001] The present application relates to the field of sensing, and in particular to an ultrasonic sensing component and an ultrasonic sensing component assembly. Background Art

[0002] Ultrasonic sensing technology is becoming more mature and has gradually expanded its application areas from traditional fingerprint recognition. It can sense larger distances through a larger area of ​​sensor configuration. Therefore, its penetration rate continues to increase in the fields of displays, automotive, etc.

[0003] As product technology gradually matures, how to improve the optimal utilization of wafer layout has become the key to cost competition. Summary of the invention

[0004] In order to solve the problems faced by the prior art, an ultrasonic sensing component assembly is provided, comprising a semiconductor substrate and a plurality of ultrasonic sensing components. The semiconductor substrate comprises a first surface and a second surface. The ultrasonic sensing components are formed in an array on the semiconductor substrate, and each ultrasonic sensing component is formed in a sensing region of the semiconductor substrate. Each ultrasonic sensing component comprises a first sensing module, a second sensing module, four connection pads and four solder pads.

[0005] The first sensing module is formed on the first surface of the sensing area, including a first sensing unit and a second sensing unit, and the first sensing unit is connected in parallel with the second sensing unit. The second sensing module is formed on the first surface of the sensing area, including a third sensing unit and a fourth sensing unit, and the third sensing unit is connected in parallel with the fourth sensing unit. The first sensing unit, the second sensing unit, the third sensing unit and the fourth sensing unit are respectively located at the four corners of the first surface of the sensing area and are arranged symmetrically. Each connection pad is respectively located between two of the first sensing unit, the second sensing unit, the third sensing unit and the fourth sensing unit, and is located in a through hole that passes through the first surface and the second surface of the sensing area. Two of the connection pads are connected to the first sensing module by lines, and the other two are connected to the second sensing module by lines. Four solder pads are located on the second surface of the sensing area, and overlap with the vertical projections of the first sensing unit, the second sensing unit, the third sensing unit and the fourth sensing unit, respectively, and each solder pad is connected to one of the four connection pads by a line.

[0006] In some embodiments, the first sensing unit, the second sensing unit, the third sensing unit, and the fourth sensing unit are piezoelectric ultrasonic sensors.

[0007] In some embodiments, each connection pad is located between two welding pads, and the two welding pads are symmetrically arranged with the connection pad as the center.

[0008] In some embodiments, the ultrasonic sensing assembly further includes a first vacant sensing unit, the first vacant sensing unit being located at the center of the first surface of the sensing region. More specifically, in some embodiments, the area of ​​the first vacant sensing unit is smaller than that of the first sensing unit, the second sensing unit, the third sensing unit, and the fourth sensing unit.

[0009] In more detail, in some embodiments, the ultrasonic sensing component further includes a plurality of second vacant sensing units, each of which is located between two of the first sensing unit, the second sensing unit, the third sensing unit, and the fourth sensing unit.

[0010] Furthermore, in some embodiments, the ultrasonic sensing component includes four second vacant sensing units, and the four second vacant sensing units are respectively located on four sides of the first vacant sensing unit and are symmetrically arranged.

[0011] Furthermore, in some embodiments, the area of ​​the second vacant sensing unit is smaller than that of the first sensing unit, the second sensing unit, the third sensing unit, and the fourth sensing unit.

[0012] An ultrasonic sensing component is also provided. The ultrasonic sensing component for wafer edge detection device includes a semiconductor substrate, a first sensing module, a second sensing module, four connection pads, and four welding pads.

[0013] The semiconductor substrate includes a first surface and a second surface. The first sensing module is formed on the first surface of the semiconductor substrate, including a first sensing unit and a second sensing unit, and the first sensing unit is connected in parallel with the second sensing unit. The second sensing module is formed on the first surface of the semiconductor substrate, including a third sensing unit and a fourth sensing unit. The third sensing unit is connected in parallel with the fourth sensing unit, wherein the first sensing unit, the second sensing unit, the third sensing unit and the fourth sensing unit are respectively located at four corners of the first surface of the semiconductor substrate and are symmetrically arranged.

[0014] Each connection pad is located between two of the first sensing unit, the second sensing unit, the third sensing unit, and the fourth sensing unit, and is located in a through hole that penetrates the first surface and the second surface of the semiconductor substrate. Two of the connection pads are connected to the first sensing module by lines, and the other two are connected to the second sensing module by lines. Four welding pads are located on the second surface of the semiconductor substrate, and overlap with the vertical projections of the first sensing unit, the second sensing unit, the third sensing unit, and the fourth sensing unit, respectively, and each welding pad is connected to one of the four connection pads by lines.

[0015] In some embodiments, the first sensing unit, the second sensing unit, the third sensing unit, and the fourth sensing unit are piezoelectric ultrasonic sensors.

[0016] In some embodiments, each connection pad is located between two welding pads, and the two welding pads are symmetrically arranged with the connection pad as the center.

[0017] In some embodiments, the ultrasonic sensing component further includes a first vacant sensing unit, the first vacant sensing unit being located at the center of the first surface of the semiconductor substrate. More specifically, in some embodiments, the area of ​​the first vacant sensing unit is smaller than that of the first sensing unit, the second sensing unit, the third sensing unit, and the fourth sensing unit.

[0018] In more detail, in some embodiments, the ultrasonic sensing component further includes a plurality of second vacant sensing units, each of which is located between two of the first sensing unit, the second sensing unit, the third sensing unit, and the fourth sensing unit.

[0019] Furthermore, in some embodiments, the ultrasonic sensing component includes four second vacant sensing units, and the four second vacant sensing units are respectively located on four sides of the first vacant sensing unit and are symmetrically arranged.

[0020] Furthermore, in some embodiments, the area of ​​the second vacant sensing unit is smaller than that of the first sensing unit, the second sensing unit, the third sensing unit, and the fourth sensing unit.

[0021] As shown in the aforementioned embodiments, the connection pads are manufactured by through-hole technology, and the sensing units and the pads can be arranged in a regular manner, so that the utilization rate of the wafer can be optimized, and the manufacturing and testing of the sensing units are easier. At the same time, according to actual needs, cutting can be selected in an array manner, and different product requirements can be met on the same wafer to achieve customized benefits. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] Figure 1 A top view of the ultrasonic sensor assembly.

[0023] Figure 2 A top view of an embodiment of an ultrasonic sensing assembly.

[0024] Figure 3 A bottom view of one embodiment of an ultrasonic sensing assembly.

[0025] Figure 4 FIG. 1 is a top view of another embodiment of an ultrasonic sensing assembly.

[0026] Figure 5 A top view of yet another embodiment of an ultrasonic sensing assembly.

[0027] Description of reference numerals:

[0028] 1: Ultrasonic sensing component;

[0029] 11: first sensing module;

[0030] 111: a first sensing unit;

[0031] 113: second sensing unit;

[0032] 13: second sensing module;

[0033] 131: a third sensing unit;

[0034] 133: fourth sensing unit;

[0035] 15: connection pad;

[0036] 17: welding pad;

[0037] 2: semiconductor substrate;

[0038] 21: first side;

[0039] 23: Second side;

[0040] 25: sensing area;

[0041] 27: through hole;

[0042] 30: Line;

[0043] 41: a first vacancy sensing unit;

[0044] 43: second vacancy sensing unit;

[0045] 100: Ultrasonic sensing component assembly. DETAILED DESCRIPTION

[0046] It should be understood that when a component is referred to as being "disposed" on another component, it may mean that the component is directly located on the other component, or there may be an intermediate component through which the component and the other component are connected. Conversely, when a component is referred to as being "directly disposed on another component" or "directly disposed to another component", it should be understood that it is clearly defined that there are no intermediate components.

[0047] In addition, the terms "first", "second", "third" and the like are only used to distinguish one component, part, region, layer or part from another component, part, region, layer or part, rather than to indicate a necessary order of precedence. In addition, relative terms such as "lower" and "upper" may be used herein to describe the relationship between one component and another component, and it should be understood that the relative terms are intended to include different orientations of the device in addition to the orientation shown in the figure. For example, if a device in a figure is turned over, the component described as being on the "lower" side of the other components will be oriented on the "upper" side of the other components. This only indicates a relative orientation relationship, rather than an absolute orientation relationship.

[0048] Figure 1 A top view of the ultrasonic sensor assembly. Figure 2 A top view of an embodiment of an ultrasonic sensing assembly. Figure 3 FIG. 1 is a bottom view of an embodiment of an ultrasonic sensing assembly. Figure 1 As shown, the ultrasonic sensing component assembly 100 includes a plurality of ultrasonic sensing components 1 and a semiconductor substrate 2. Here, the semiconductor substrate 2 may be a silicon wafer, and the ultrasonic sensing components 1 are formed in an array on the semiconductor substrate 2. The semiconductor substrate 2 includes a first surface 21 and a second surface 23.

[0049] Each ultrasonic sensor component 1 is formed in a sensing region 25 of a semiconductor substrate 2. Figure 2 and Figure 3 As shown, each ultrasonic sensing component 1 includes a first sensing module 11, a second sensing module 13, four connection pads 15 and four solder pads 17. The first sensing module 11 is formed on the first surface 21 of the sensing area 25, and includes a first sensing unit 111 and a second sensing unit 113. The first sensing unit 111 and the second sensing unit 113 are connected in parallel. The second sensing module 13 is formed on the first surface 21 of the sensing area 25, and includes a third sensing unit 131 and a fourth sensing unit 133. The third sensing unit 131 and the fourth sensing unit 133 are connected in parallel. The first sensing unit 111, the second sensing unit 113, the third sensing unit 131 and the fourth sensing unit 133 are respectively located at the four corners of the first surface 21 of the sensing area 25, and are symmetrically arranged.

[0050] Each connection pad 15 is located between two of the first sensing unit 111, the second sensing unit 113, the third sensing unit 131, and the fourth sensing unit 133, and is located in a through hole 27 that penetrates the first surface 21 and the second surface 23 of the sensing region 25. Two of the connection pads 15 are connected to the first sensing module 11 by a line 30, respectively connected to the positive electrode and the negative electrode of the first sensing module 11, and the other two are connected to the second sensing module 13 by a line 30, respectively connected to the positive electrode and the negative electrode of the second sensing module 13. The four solder pads 17 are located on the second surface 23 of the sensing region 25, and overlap with the vertical projections of the first sensing unit 111, the second sensing unit 113, the third sensing unit 131, and the fourth sensing unit 133, respectively, that is, the four solder pads 17 are located directly below the first sensing unit 111, the second sensing unit 113, the third sensing unit 131, and the fourth sensing unit 133. Each soldering pad 17 is connected to one of the four connecting pads 15 by a line 30, so that the first sensing unit 111, the second sensing unit 113, the third sensing unit 131 and the fourth sensing unit 133 can be electrically connected to the components connected to the soldering pads 17, such as a circuit board, through the soldering pads 17 and the connecting pads 15.

[0051] See again Figure 1 The ultrasonic sensing component assembly 100 is actually a part of the wafer integrated circuit layout. Since the ultrasonic sensing components 1 are arranged in an array and symmetrically, they can actually be cut into one ultrasonic sensing component 1 or multiple ultrasonic sensing components 1, such as 1x2, 2x4, according to the needs of the product. In this way, the needs of different products can be met on the same wafer, greatly improving the utilization rate of the wafer. After the wafer is cut, the sensing area 25 where the ultrasonic sensing component 1 is located is the substrate of the component. The ultrasonic sensing component 1 is the minimum size that can be cut.

[0052] Here, the first sensing unit 111 , the second sensing unit 113 , the third sensing unit 131 , and the fourth sensing unit 133 are piezoelectric ultrasonic sensors, such as piezoelectric micromachined ultrasonic transducers (PMUT).

[0053] See again Figure 3 In some embodiments, each connection pad 15 is located between two solder pads 17, and the two solder pads 17 are symmetrically arranged with the connection pad 15 as the center. The symmetrical arrangement structure makes the overall layout and subsequent packaging inspection more convenient.

[0054] Figure 4 FIG. 1 is a top view of another embodiment of an ultrasonic sensor assembly. Figure 4 As shown, in this embodiment, the ultrasonic sensing component 1 further includes a first vacant sensing unit 41. The first vacant sensing unit 41 is located at the center of the first surface 21 of the sensing area 25. In more detail, the area of ​​the first vacant sensing unit 41 is smaller than that of the first sensing unit 111, the second sensing unit 113, the third sensing unit 131 and the fourth sensing unit 133. The first vacant sensing unit 41 can be made together with the first sensing unit 111, the second sensing unit 113, the third sensing unit 131 and the fourth sensing unit 133, but is not connected to the pad 17. Since its structure is roughly the same as that of the first sensing unit 111, the second sensing unit 113, the third sensing unit 131 and the fourth sensing unit 133, all of which have cavities, it can be used as a positioning, noise filtering, crosstalk reduction, and bandwidth supplementation functions.

[0055] Figure 5 FIG. 1 is a top view of another embodiment of an ultrasonic sensor assembly. Figure 5As shown, the ultrasonic sensing component 1 further includes a plurality of second vacant sensing units 43, two of which are taken as an example. The second vacant sensing unit 43 is located between the first sensing unit 111 and the second sensing unit 113, and between the third sensing unit 131 and the fourth sensing unit 133. However, this is only an example and not intended to be limiting. The second vacant sensing unit 43 is similar in structure and function to the first vacant sensing unit 41. Similarly, the area of ​​the second vacant sensing unit 43 is smaller than that of the first sensing unit 111, the second sensing unit 113, the third sensing unit 131, and the fourth sensing unit 133.

[0056] See again Figure 2 In some embodiments, the ultrasonic sensor assembly 1 includes four second vacancy sensing units 43, which are respectively located on four sides of the first vacancy sensing unit 41 and arranged symmetrically. The number and arrangement of the second vacancy sensing units 43 are only examples and are not intended to be limiting.

[0057] In summary, by manufacturing the connection pad 15 through the through hole technology and by arranging the sensing units 111, 113, 131, 133 and the welding pad 17 in a regular layout, the utilization rate of the wafer can be optimized, and the manufacturing and testing of the sensing units 111, 113, 131, 133 are easier. At the same time, according to actual needs, cutting can be selected in an array manner, and different product requirements can be met on the same wafer to achieve customized benefits.

[0058] Although the technical contents of this application have been disclosed as above in the form of preferred embodiments, they are not intended to limit this application. Any changes and modifications made by anyone skilled in the art without departing from the spirit of this application should be included in the scope of this application. Therefore, the scope of protection of this application shall be determined by the scope of the attached patent application.

Claims

1. An ultrasonic sensor component assembly, characterized in that: Include: A semiconductor substrate comprising a first surface and a second surface; and A plurality of ultrasonic sensing components are formed in an array on the semiconductor substrate, each of the ultrasonic sensing components is formed in a sensing region of the semiconductor substrate, wherein each of the ultrasonic sensing components comprises: A first sensing module, formed on the first surface of the sensing area, comprising a first sensing unit and a second sensing unit, wherein the first sensing unit and the second sensing unit are connected in parallel; a second sensing module, formed on the first surface of the sensing area, comprising a third sensing unit and a fourth sensing unit, wherein the third sensing unit is connected in parallel with the fourth sensing unit, wherein the first sensing unit, the second sensing unit, the third sensing unit and the fourth sensing unit are respectively located at four corners of the first surface of the sensing area and are symmetrically arranged; Four connection pads, each of which is located between two of the first sensing unit, the second sensing unit, the third sensing unit, and the fourth sensing unit, and is located in a through hole that passes through the first surface and the second surface of the sensing area, and two of the four connection pads are connected to the first sensing module by lines, and the other two connection pads are connected to the second sensing module by lines; as well as Four solder pads are located on the second surface of the sensing area and overlap with vertical projections of the first sensing unit, the second sensing unit, the third sensing unit and the fourth sensing unit respectively, and each solder pad is connected to one of the four connection pads by a line.

2. The ultrasonic sensor assembly as claimed in claim 1, characterized in that: The first sensing unit, the second sensing unit, the third sensing unit, and the fourth sensing unit are piezoelectric ultrasonic sensors.

3. The ultrasonic sensor assembly as claimed in claim 1, characterized in that: Each connection pad is located between two of the four welding pads, and the two welding pads are symmetrically arranged with the connection pad as the center.

4. The ultrasonic sensor assembly as claimed in claim 1, wherein: Each of the ultrasonic sensing components further includes a first vacant sensing unit, and the first vacant sensing unit is located at the center of the first surface of the sensing area.

5. The ultrasonic sensor assembly as claimed in claim 4, characterized in that: The area of ​​the first vacant sensing unit is smaller than that of the first sensing unit, the second sensing unit, the third sensing unit, and the fourth sensing unit.

6. The ultrasonic sensor assembly as claimed in claim 4, characterized in that: Each of the ultrasonic sensing components further includes a plurality of second vacant sensing units, and the second vacant sensing units are located between two of the first sensing unit, the second sensing unit, the third sensing unit, and the fourth sensing unit.

7. The ultrasonic sensor assembly as claimed in claim 6, characterized in that: Each of the ultrasonic sensing components includes four second vacant sensing units, and the four second vacant sensing units are respectively located on four sides of the first vacant sensing unit and are symmetrically arranged.

8. The ultrasonic sensor assembly as claimed in claim 6, characterized in that: The second vacant sensing units have smaller areas than the first sensing unit, the second sensing unit, the third sensing unit, and the fourth sensing unit.

9. An ultrasonic sensor assembly, characterized in that: Include: A semiconductor substrate comprising a first surface and a second surface; A first sensing module, formed on the first surface of the semiconductor substrate, comprising a first sensing unit and a second sensing unit, wherein the first sensing unit and the second sensing unit are connected in parallel; a second sensing module, formed on the first surface of the semiconductor substrate, comprising a third sensing unit and a fourth sensing unit, wherein the third sensing unit is connected in parallel with the fourth sensing unit, wherein the first sensing unit, the second sensing unit, the third sensing unit and the fourth sensing unit are respectively located at four corners of the first surface of the semiconductor substrate and are symmetrically arranged; Four connection pads, each of which is located between two of the first sensing unit, the second sensing unit, the third sensing unit, and the fourth sensing unit, and the four connection pads are located in through holes penetrating the first surface and the second surface of the semiconductor substrate, and two of the four connection pads are connected to the first sensing module by lines, and the other two connection pads are connected to the second sensing module by lines; as well as Four bonding pads are located on the second surface of the semiconductor substrate and overlap with vertical projections of the first sensing unit, the second sensing unit, the third sensing unit and the fourth sensing unit respectively, and each bonding pad is connected to one of the four connection pads by a line.

10. The ultrasonic sensor assembly according to claim 9, wherein: The first sensing unit, the second sensing unit, the third sensing unit, and the fourth sensing unit are piezoelectric ultrasonic sensors.

11. The ultrasonic sensor assembly according to claim 9, wherein: Each connection pad is located between two welding pads of the four welding pads, and the two welding pads are symmetrically arranged with the connection pad as the center.

12. The ultrasonic sensor assembly according to claim 9, wherein: The invention also includes a first vacancy sensing unit, wherein the first vacancy sensing unit is located at the center of the first surface of the semiconductor substrate.

13. The ultrasonic sensor assembly according to claim 12, wherein: The area of ​​the first vacant sensing unit is smaller than that of the first sensing unit, the second sensing unit, the third sensing unit, and the fourth sensing unit.

14. The ultrasonic sensor assembly according to claim 12, wherein: The device further includes a plurality of second vacant sensing units, each of which is located between two of the first sensing unit, the second sensing unit, the third sensing unit, and the fourth sensing unit.

15. The ultrasonic sensor assembly according to claim 14, wherein: The invention comprises four second vacancy sensing units, wherein the four second vacancy sensing units are respectively located at four sides of the first vacancy sensing unit and are symmetrically arranged.

16. The ultrasonic sensor assembly according to claim 14, wherein: The areas of the four second vacant sensing units are smaller than those of the first sensing unit, the second sensing unit, the third sensing unit, and the fourth sensing unit.

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