Silicon carbide laser stripping device and method

Abstract

The embodiment of the invention provides a silicon carbide laser stripping device and method, and relates to the technical field of silicon carbide crystal stripping. The silicon carbide laser stripping method is applied to the silicon carbide laser stripping device. The silicon carbide laser stripping device comprises an ultrasonic device, a bearing device, a gluing device and a tension fracture device. The bearing device comprises a bearing platform, the bearing platform is used for bearing a silicon carbide crystal ingot modified through laser irradiation, and the silicon carbide crystal ingot comprises a base layer and a wafer to be stripped. The base layer is placed on the bearing platform, and the gluing device is used for evenly gluing the side, away from the base layer, of the to-be-stripped wafer so as to form a bonding layer on the to-be-stripped wafer. The tension cracking device is located above the bearing platform and comprises a lifting mechanism and a connecting piece. Through the cooperation of the ultrasonic device, the bearing device, the gluing device and the pull cracking device, an operator can conveniently separate a base layer in a silicon carbide crystal ingot from a wafer to be stripped, silicon carbide crystal ingot stripping operation is achieved, and the situation that the surface of the wafer is damaged when the wafer is separated from the base layer can be effectively avoided.

Description

Technical Field

[0001] The present invention relates to the technical field of silicon carbide crystal peeling, and in particular to a silicon carbide laser peeling device and method. Background Art

[0002] In order to obtain thin sheet materials suitable for semiconductor device manufacturing, the silicon carbide ingot needs to be stripped to improve material utilization, processing accuracy and performance, and facilitate subsequent processing and device manufacturing. Stripping is an important step in semiconductor material processing and is crucial to the performance and reliability of the final device.

[0003] The inventors have found that after the silicon carbide ingot is modified by laser irradiation, it absorbs the laser energy nonlinearly at a specific depth to form a brittle modified layer, thereby realizing the wafer cutting of the silicon carbide ingot. However, the laser cutting wafer after the so-called modified layer is formed is still a difficult point in the industry in the peeling process. The first method is to choose to put it into a liquid nitrogen container for cooling so that the modified layer of the ingot breaks to achieve peeling. The second method is to apply a vibration force to the wafer to be peeled by a vibration mechanism to peel the modified layer from the base layer. However, the peeling process by cooling in a liquid nitrogen container requires precise control of the liquid nitrogen introduction rate and volume, and the operation is difficult. In the process of vibration peeling, it is easy to cause damage to the edge of the silicon carbide ingot, and it is also easy to cause damage to the wafer to be peeled. Some existing pulling and cracking devices use pulling and cracking to achieve silicon carbide ingot peeling, which is also easy to cause damage to silicon carbide wafers. Summary of the invention

[0004] The object of the present invention is to provide a silicon carbide laser stripping device and method, which can reduce the difficulty of stripping silicon carbide ingots during stripping operations and avoid damage to the interior and surface of the silicon carbide ingots.

[0005] The embodiment of the present invention is achieved as follows: In a first aspect, the present invention provides a silicon carbide laser stripping device, comprising: A carrying device, the carrying device includes a support platform, the support platform is used to carry the silicon carbide ingot modified by laser irradiation, the silicon carbide ingot includes a base layer and a wafer to be peeled off, and the base layer is placed on the support platform; An ultrasonic device, the ultrasonic device comprising an ultrasonic water pool for placing the silicon carbide ingot, the ultrasonic water pool being used to emit ultrasonic waves propagating in a predetermined direction, the predetermined direction being perpendicular to the cleavage plane of the silicon carbide ingot; A glue coating device, the glue coating device is used to evenly coat glue on the side of the wafer to be peeled away from the base layer, so as to form an adhesive layer on the wafer to be peeled; A pulling and cracking device, which is located above the support platform and includes a lifting mechanism and a connecting piece, wherein the connecting piece is connected to the driving end of the lifting mechanism, and the connecting piece can be connected to the wafer to be peeled through an adhesive layer; Among them, the pulling device is used to drive the connecting piece to move in the height direction through the lifting mechanism, so that the connecting piece is bonded to the wafer to be peeled off and the wafer to be peeled off the base layer, and the side of the wafer to be peeled off close to the base layer is parallel to the cleavage surface of the silicon carbide ingot.

[0006] In an optional embodiment, the bearing device further includes a rotating member connected to the support platform, and the rotating member is used to drive the support platform to rotate along a preset axis, and the preset axis is perpendicular to the bearing surface of the support platform.

[0007] In an optional embodiment, the support platform is provided with a bearing area, the base layer is placed in the bearing area, and the axis of the bearing area, the axis of the support platform and the preset axis are coaxial.

[0008] In an optional embodiment, the supporting device further includes a first heat exchange component connected to the support platform, and the first heat exchange component is used for exchanging heat with the support platform.

[0009] In an optional embodiment, the support platform is provided with a plurality of evenly distributed adsorption members, and the support platform adsorbs the base layer of the silicon carbide ingot through the adsorption members; And / or the lifting mechanism is one of a driving cylinder, a driving oil cylinder or a screw motor.

[0010] In an optional embodiment, a graphite layer is provided on a side of the connecting member away from the lifting mechanism, and the graphite layer is used to bond with the wafer to be peeled off.

[0011] In an optional embodiment, the tearing device further includes a power supply structure electrically connected to the graphite layer to change the temperature of the graphite layer.

[0012] In an optional embodiment, the silicon carbide laser peeling device also includes a frame and a sliding block arranged on the top of the frame, the sliding block can move relative to the frame along a preset direction, and the gluing device and the tearing device are both installed on the sliding block and arranged at intervals along the preset direction.

[0013] In an optional embodiment, the silicon carbide laser stripping device further includes a material tray, which is located below the sliding block and is spaced apart from the supporting device along a preset direction.

[0014] In an alternative embodiment, the tray is at least partially made of a flexible material.

[0015] In a second aspect, the present invention provides a silicon carbide laser stripping method, which is applied to the silicon carbide laser stripping device of any of the aforementioned embodiments, to strip the substrate from the wafer to be stripped, the method comprising: Putting the silicon carbide ingot modified by laser irradiation into an ultrasonic water tank with the cleavage surface of the silicon carbide ingot facing upward, and starting the ultrasonic water tank so that the propagation direction of the ultrasonic wave emitted by the ultrasonic water tank is perpendicular to the cleavage surface of the silicon carbide ingot; Placing the silicon carbide ingot after ultrasonic treatment on a support platform, with the wafer to be peeled off of the silicon carbide ingot facing upward; Controlling the glue coating device to move to the position just above the wafer to be peeled off, so that the glue coating device evenly coats the wafer to be peeled off; The pulling and splitting device is controlled to move to the position just above the wafer to be peeled off and the pulling and splitting device is controlled to peel off the wafer to be peeled off from the base layer.

[0016] The beneficial effect of the embodiment of the present invention is as follows: a silicon carbide laser stripping device provided by the embodiment of the present invention includes an ultrasonic device, a carrying device, a glue coating device and a pulling device. The carrying device includes a support platform, which is used to carry the silicon carbide ingot modified by laser irradiation, and the silicon carbide ingot includes a base layer and a wafer to be stripped. The base layer is placed on the support platform, and the glue coating device is used to evenly coat the glue on the side of the wafer to be stripped away from the base layer to form an adhesive layer on the wafer to be stripped. The pulling device is located above the support platform and includes a lifting mechanism and a connecting member, which is connected to the driving end of the lifting mechanism, and the connecting member can be connected to the wafer to be stripped through the adhesive layer. Through the cooperation of the carrying device, the glue coating device and the pulling device, it is convenient for operators to separate the base layer from the wafer to be stripped in the silicon carbide ingot, and realize the silicon carbide ingot stripping operation, and due to the buffering effect of the adhesive layer, it can effectively avoid the situation that the surface of the wafer to be stripped is damaged when the wafer to be stripped is separated from the base layer. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings required for use in the embodiments are briefly introduced below. It should be understood that the following drawings only show certain embodiments of the present invention and therefore should not be regarded as limiting the scope. For ordinary technicians in this field, other related drawings can be obtained based on these drawings without creative work.

[0018] Figure 1 One of the structural schematic diagrams of the silicon carbide laser stripping device provided in an embodiment of the present invention; Figure 2 A second structural schematic diagram of a silicon carbide laser stripping device provided in an embodiment of the present invention; Figure 3 A third structural schematic diagram of a silicon carbide laser stripping device provided in an embodiment of the present invention; Figure 4 A fourth structural schematic diagram of a silicon carbide laser stripping device provided in an embodiment of the present invention; Figure 5 A schematic flow chart of a silicon carbide laser stripping method provided in an embodiment of the present invention.

[0019] Icons: 1-silicon carbide laser peeling device; 100-carrying device; 110-supporting platform; 120-rotating part; 200-glue coating device; 300-tearing device; 310-lifting mechanism; 320-connecting part; 330-graphite layer; 340-power supply structure; 400-material tray; 500-frame; 510-sliding block; 600-ultrasonic device; 610-ultrasonic water pool; 2-silicon carbide ingot; 201-silicon carbide wafer. DETAILED DESCRIPTION

[0020] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are part of the embodiments of the present invention, not all of the embodiments. Generally, the components of the embodiments of the present invention described and shown in the drawings here can be arranged and designed in various different configurations.

[0021] Therefore, the following detailed description of the embodiments of the present invention provided in the accompanying drawings is not intended to limit the scope of the invention claimed for protection, but merely represents selected embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0022] It should be noted that similar reference numerals and letters denote similar items in the following drawings, and therefore, once an item is defined in one drawing, further definition and explanation thereof is not required in subsequent drawings.

[0023] In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inside", "outside", etc. indicate positions or positional relationships based on the positions or positional relationships shown in the accompanying drawings, or the positions or positional relationships in which the product of the invention is usually placed when in use. They are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific position, be constructed and operated in a specific position, and therefore cannot be understood as limiting the present invention. In addition, the terms "first", "second", "third", etc. are only used to distinguish the description, and cannot be understood as indicating or implying relative importance.

[0024] In addition, the terms "horizontal", "vertical" and the like do not mean that the components are required to be absolutely horizontal or suspended, but can be slightly tilted. For example, "horizontal" only means that its direction is more horizontal than "vertical", and does not mean that the structure must be completely horizontal, but can be slightly tilted.

[0025] In the description of the present invention, it is also necessary to explain that, unless otherwise clearly specified and limited, the terms "set", "install", "connect", and "connect" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection, or it can be indirectly connected through an intermediate medium, or it can be the internal communication of two elements. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0026] In the prior art, after the silicon carbide ingot is modified by laser irradiation, in order to peel the wafer to be peeled, most of the peeling is carried out by the following methods, such as placing it in a liquid nitrogen container for cooling so that the wafer to be peeled of the ingot is broken to achieve peeling, such as using a mechanical clamp or suction cup to pull the wafer to be peeled off from the base layer for peeling, or applying a vibration force on the wafer to be peeled off from the base layer by a vibration mechanism. However, the slicing process by cooling in a liquid nitrogen container requires precise control of the liquid nitrogen introduction rate and volume, and the corresponding process and equipment requirements are relatively high, and the method of pulling the wafer to be peeled off from the base layer by mechanical clamps is likely to cause damage to the surface of the wafer to be peeled. In the process of vibration peeling, it is easy to cause damage to the inside of the silicon carbide ingot and the surface of the wafer to be peeled.

[0027] The embodiment of the present invention provides a silicon carbide laser stripping device, which can not only reduce the difficulty of the stripping operation of the silicon carbide ingot, but also reduce the situation of damage to the modified surface caused during the stripping.

[0028] The specific structure of a silicon carbide laser peeling device provided by an embodiment of the present invention and the corresponding technical effects it brings are described in detail below in conjunction with the patent drawings.

[0029] Please refer to Figure 1 A silicon carbide laser peeling device 1 provided in an embodiment of the present invention includes a carrying device 100, an ultrasonic device 600, a glue coating device 200 and a tearing device 300.

[0030] The carrying device 100 includes a support platform 110, which is used to carry the silicon carbide ingot 2 modified by laser irradiation, and the silicon carbide ingot 2 includes a base layer and a wafer to be peeled off. It should be noted that the thickness of the wafer to be peeled off in this embodiment is much smaller than the thickness of the base layer, that is, the wafer to be peeled off is the basis for the subsequent peeling of the silicon carbide ingot 2.

[0031] The base layer is placed on the platform 110, that is, the wafer to be peeled is located on the side of the base layer away from the platform 110. The glue coating device 200 is used to evenly coat the glue on the side of the wafer to be peeled away from the base layer to form an adhesive layer on the wafer to be peeled.

[0032] It should be noted that the uniformity in this embodiment should not be understood as uniformity in a strict sense, as long as it is roughly uniform.

[0033] The ultrasonic device 600 includes an ultrasonic water pool 610 for placing the silicon carbide ingot 2 modified by laser irradiation. The ultrasonic water pool 610 is used to emit ultrasonic waves propagating in a predetermined direction, and the predetermined direction is perpendicular to the cleavage plane of the silicon carbide ingot 2. It should be noted that the cleavage plane is a relatively weak area in the crystal structure, with low bonding strength and prone to breakage or separation. When the ultrasonic wave acts perpendicularly on the cleavage plane, local stress concentration can be generated in these weak areas. Therefore, after the silicon carbide ingot 2 modified by laser irradiation is placed in the ultrasonic device 600 for ultrasonic pretreatment, it helps to loosen and separate the cleavage plane, thereby reducing the difficulty of the subsequent pulling device 300 to peel off the wafer to be peeled and the base layer, thereby reducing the surface damage of the wafer to be peeled.

[0034] It should be noted that the above-mentioned cleavage plane can be understood as the 001 plane of the silicon carbide ingot 2, that is, the cleavage plane of the silicon carbide ingot 2 can be understood as the silicon plane of the silicon carbide ingot 2, and the verticality in this embodiment is not limited to being understood as verticality in a strict sense, as long as it is approximately vertical.

[0035] Of course, in some other embodiments, the transmission direction of the ultrasonic wave emitted by the ultrasonic water pool 610 may not be perpendicular to the cleavage plane, as long as it forms an angle with the cleavage plane.

[0036] The tearing device 300 is located above the support platform 110 and includes a lifting mechanism 310 and a connecting member 320. The connecting member 320 is connected to the driving end of the lifting mechanism 310. The connecting member 320 can be connected to the wafer to be peeled through an adhesive layer.

[0037] It is understandable that the lifting mechanism 310 can drive the connecting member 320 away from or close to the wafer to be peeled. Driven by the lifting mechanism 310, the connecting member 320 can gradually approach the wafer to be peeled, and then be pressed on the wafer to be peeled, so that the connecting member 320 is connected to the wafer to be peeled through the adhesive layer. It is understandable that after the silicon carbide ingot 2 is irradiated by the laser, microcracks or other forms of the wafer to be peeled can be caused in the silicon carbide ingot 2. The wafer to be peeled is the basis for subsequent peeling, and the connecting member 320 is bonded to the wafer to be peeled through the adhesive layer. The adhesive layer can serve as a buffer layer on the wafer to be peeled to avoid direct hard contact between the connecting member 320 and the wafer to be peeled, thereby avoiding the situation where the wafer surface is damaged or cracked after the connecting member 320 and the wafer to be peeled are in hard contact. In other words, under the action of the adhesive layer, the wafer surface can be protected from the direct pressure of the connecting member 320, reducing the damage to the surface of the wafer to be peeled.

[0038] In addition, the adhesive layer can also evenly distribute the pressure of the connecting member 320 pressing down on the wafer to be peeled, so that the surface of the wafer to be peeled is evenly stressed to avoid excessive local stress. The adhesive layer formed by the uniform distribution of adhesive has a certain elasticity and toughness. After the connecting member 320 is bonded to the wafer to be peeled, the lifting mechanism 310 can drive the connecting member 320 to move upward to move away from the base layer, thereby driving the wafer to be peeled off the base layer to achieve peeling. In the process of peeling the wafer to be peeled off the base layer, the existence of the adhesive layer can make the peeling process more gradual and smooth. As the lifting mechanism 310 rises, the adhesive layer gradually stretches, thereby driving the wafer to be peeled off gradually from the base layer, so that the silicon carbide wafer 201 under peeling is driven to rise by the connecting member 320 through the adhesive layer.

[0039] It is understandable that in the process of applying glue on the wafer to be peeled by the glue coating device 200, the thickness of the formed adhesive layer can be controlled, and the adhesive material can be controlled to control the adhesive strength, so as to better control the speed and strength of peeling the wafer to be peeled, and effectively avoid damage caused by the breakage of the wafer to be peeled. Therefore, when applying glue on the wafer to be peeled by the glue coating device 200, it is necessary to control the uniformity of the glue coating to ensure that the glue is evenly distributed on the wafer to be peeled to form an adhesive layer with uniform thickness, and it is also necessary to control the thickness of the adhesive layer so that the adhesive layer can play a buffering role and is not too thick to affect the peeling base of the wafer to be peeled.

[0040] It can be understood that in this embodiment, through the cooperation of the supporting device 100, the glue coating device 200 and the pulling device 300, it is convenient for the operator to separate the base layer in the silicon carbide ingot 2 from the wafer to be peeled off, and realize the peeling operation of the silicon carbide ingot 2. In addition, due to the buffering effect of the adhesive layer, it can effectively avoid the surface of the wafer to be peeled off from being damaged when the wafer to be peeled off is separated from the base layer.

[0041] Optionally, in some embodiments, the supporting device 100 also includes a rotating member 120 connected to the support platform 110, and the rotating member 120 is used to drive the support platform 110 to rotate along a preset axis, and the preset axis is perpendicular to the supporting surface of the support platform 110. It can be understood that since the support platform 110 can rotate along the preset axis driven by the rotating member 120, and the preset axis is perpendicular to the supporting surface of the support platform 110, therefore, after the glue coating device 200 coats the glue on the wafer to be peeled off, the rotating member 120 can also drive the support platform 110 to rotate, thereby driving the silicon carbide ingot 2 to rotate, and during the rotation process, the glue can be evenly distributed on the surface of the wafer to be peeled off.

[0042] It is understandable that the setting of the rotating member 120 can improve the uniformity of the adhesive layer. According to the above, a uniform adhesive layer can make the surface of the wafer to be peeled be uniformly stressed, avoid excessive local stress, and effectively avoid damage to the wafer to be peeled.

[0043] In some optional embodiments, the support platform 110 is provided with a supporting area, and the base layer is placed in the supporting area. The axis of the supporting area, the axis of the supporting platform 110 and the preset axis are coaxial. Therefore, after the silicon carbide ingot 2 is placed in the supporting area, it can be ensured that the axis of the silicon carbide ingot 2 is roughly coaxial with the preset axis, so that during the rotation of the support platform 110, the silicon carbide ingot 2 will not be easily displaced and the adhesive on the wafer to be peeled off is evenly distributed.

[0044] Optionally, the aforementioned bearing area may be an area marked on the support platform 110 , or may be a placement groove for placing the silicon carbide ingot 2 .

[0045] Optionally, the supporting device 100 also includes a first heat exchanger connected to the platform 110, and the first heat exchanger is used to exchange heat with the platform 110, wherein the first heat exchanger can be used for heating or cooling, thereby heating the platform 110 or cooling the platform 110. Therefore, when the silicon carbide ingot 2 is placed on the platform 110, after the glue coating device 200 coats glue on the wafer to be peeled off of the silicon carbide ingot 2, the first heat exchanger can exchange heat with the adhesive layer on the silicon carbide ingot 2 through the platform 110 to control the state of the adhesive layer, thereby achieving better bonding with the connecting member 320.

[0046] In order to ensure the separation efficiency of the base layer and the wafer to be peeled in the silicon carbide ingot 2, in some optional embodiments, the support platform 110 is provided with a plurality of evenly distributed adsorbents, and the support platform 110 adsorbs the base layer of the silicon carbide ingot 2 through the adsorbents. Therefore, after the connecting member 320 and the wafer to be peeled are bonded by the adhesive layer, in the process of the lifting mechanism 310 driving the connecting member 320 to rise to peel the base layer and the wafer to be peeled, the wafer to be peeled needs to overcome not only the gravity of the base layer itself, but also the adsorption force of the adsorbent on the base layer, thereby better realizing the separation of the base layer and the wafer to be peeled, and improving the stripping efficiency of the silicon carbide ingot 2.

[0047] It can be understood that the adsorption part can be a vacuum hole, which is used to connect to the vacuum generator. The silicon carbide ingot 2 can be firmly adsorbed on the support platform 110 by vacuum adsorption. When the rotating part 120 drives the support platform 110 to rotate, the silicon carbide ingot 2 can also be adsorbed by the adsorption part to ensure that the silicon carbide ingot 2 is stably located on the support platform 110.

[0048] Optionally, in some embodiments, the lifting mechanism 310 is one of a driving cylinder, a driving oil cylinder or a screw motor.

[0049] In this embodiment, a graphite layer 330 is provided on the side of the connector 320 away from the lifting mechanism 310. The graphite layer 330 is used to bond with the wafer to be peeled. That is, when the lifting mechanism 310 drives the connector 320 to move downward toward the wafer to be peeled, the connector 320 is indirectly connected to the wafer to be peeled through the graphite layer 330. It can be understood that the graphite layer 330 has a certain degree of flexibility and elasticity, which can play a buffering role in the tearing process, reduce the direct pressure of the connector 320 on the wafer, and thus reduce the damage to the wafer surface. The graphite layer 330 can prevent the connector 320 from directly contacting the wafer surface and reduce scratches or cracks caused by hard contact. That is, through the arrangement of the graphite layer 330 and the bonding layer, it can play a secondary buffering role during the peeling operation.

[0050] Graphite also has good adhesive properties and can form a strong bond with a variety of adhesive materials. This helps maintain the stability and reliability of the adhesive layer during the stripping process.

[0051] Optionally, the tearing device 300 further includes a power supply structure 340 electrically connected to the graphite layer 330, so as to change the temperature of the graphite layer 330. Specifically, in this embodiment, when the power supply structure 340 is powered on, the graphite layer 330 can be heated. It can be understood that after the graphite layer 330 is bonded with the peeled silicon carbide wafer 201 through the adhesive layer, when the peeled silicon carbide wafer 201 needs to be removed, the power supply structure 340 can be powered on to heat the graphite layer 330, so that the adhesive layer gradually melts, and then the silicon carbide wafer 201 can be separated from the graphite layer 330.

[0052] Optionally, the silicon carbide laser stripping device 1 further includes a frame 500 and a sliding block 510 disposed on the top of the frame 500, the sliding block 510 can move in a preset direction relative to the frame 500, the glue coating device 200 and the tearing device 300 are both installed on the sliding block 510 and arranged at intervals along the preset direction, so that under the action of the sliding block 510, the glue coating device 200 and the tearing device 300 can be driven to move in the preset direction, that is, when it is necessary to apply glue to the wafer to be peeled off on the silicon carbide ingot 2 placed on the support platform 110, the sliding block 510 can be used to The glue coating device 200 moves in a preset direction so that the glue coating device 200 moves to the top of the wafer to be peeled off. After the glue coating is completed, the sliding block 510 can drive the pulling device 300 to move to the top of the wafer to be peeled off, and then the lifting mechanism 310 drives the graphite layer 330 and the connecting member 320 to be pressed down in the height direction until the graphite layer 330 is bonded to the wafer to be peeled off through the adhesive layer. After the bonding is completed, the lifting mechanism 310 drives the graphite layer 330 to rise to peel off the base layer and the wafer to be peeled off, thereby realizing the peeling of the silicon carbide wafer 201.

[0053] Optionally, the silicon carbide laser stripping device 1 also includes a material tray 400, which is located below the sliding block 510 and is arranged at intervals with the supporting device 100 along a preset direction. It can be understood that since the glue coating device 200 and the tearing device 300 installed on the sliding block 510 are also arranged at intervals along the preset direction, the tearing device 300 can be conveniently moved in the preset direction to the top of the material tray 400 after completing the stripping of the silicon carbide wafer 201, and after the graphite layer 330 is heated, the silicon carbide wafer 201 can fall into the material tray 400.

[0054] Optionally, in order to prevent the silicon carbide wafer 201 from being scratched by the material tray 400, the material tray 400 is at least partially made of a flexible material to reduce hard contact between the material tray 400 and the silicon carbide wafer 201. Alternatively, a buffer layer is provided in the material tray 400, the buffer layer is made of a buffer material, and the buffer layer is used to contact the silicon carbide wafer 201.

[0055] The embodiment of the present invention also provides a silicon carbide laser stripping method.

[0056] Principle of the peeling method: S100: Please refer to Figure 1-Figure 2 and Figure 5 When the silicon carbide laser stripping device 1 provided in the embodiment of the present invention is working, the silicon carbide ingot 2 modified by laser irradiation can be placed in the ultrasonic water pool 610 in advance with the cleavage surface of the silicon carbide ingot 2 facing upward, and the ultrasonic water pool 610 is started to perform ultrasonic treatment on the silicon carbide ingot 2, so that the propagation direction of the ultrasonic wave emitted by the ultrasonic water pool 610 is perpendicular to the cleavage surface of the silicon carbide ingot 2; S200: placing the silicon carbide crystal ingot 2 after ultrasonic treatment on the support platform 110, with the wafer to be peeled off of the silicon carbide crystal ingot 2 facing upward.

[0057] Then, the sliding block 510 drives the glue coating device 200 to move to the top of the wafer to be peeled, so that the glue coating device 200 coats the top of the wafer to be peeled. After coating, the rotating member 120 drives the support platform 110 to rotate, and then drives the silicon carbide crystal ingot 2 above the support platform 110 to rotate, so that the glue on the wafer to be peeled is evenly distributed on the wafer to be peeled, so as to form an adhesive layer with uniform thickness. S300: Please refer to Figure 3 , and then the sliding block 510 can drive the pulling device 300 to move to the top of the wafer to be peeled off and control the pulling device 300 to peel off the wafer to be peeled off the base layer.

[0058] In detail, the graphite layer 330 is pressed down by the lifting mechanism 310 so that the graphite layer 330 is bonded to the chip to be peeled off through the adhesive layer. After the bonding graphite layer 330 is firmly bonded to the chip to be peeled off, the lifting mechanism 310 can be used to drive the graphite layer 330 to rise to separate the chip to be peeled off from the base layer, thereby completing the peeling of the silicon carbide chip 201.

[0059] Please refer to Figure 4 After peeling off the silicon carbide wafer 201, the sliding block 510 drives the tearing device 300 to move to the top of the material tray 400, and moves in the direction of the material tray 400 under the action of the lifting mechanism 310. After moving downward for a preset distance, the power supply structure 340 supplies power to heat the graphite layer 330 to melt the adhesive layer, thereby causing the silicon carbide wafer 201 to detach from the graphite layer 330 and fall into the material tray 400.

[0060] Then, the above steps are repeated to complete the next slicing operation of the silicon carbide ingot 2 .

[0061] In summary, a silicon carbide laser peeling device 1 provided in an embodiment of the present invention includes a carrying device 100, an ultrasonic device 600, a glue coating device 200 and a pulling device 300. The carrying device 100 includes a support platform 110, and the support platform 110 is used to carry the silicon carbide ingot 2 modified by laser irradiation, and the silicon carbide ingot 2 includes a base layer and a wafer to be peeled. The base layer is placed on the support platform 110, and the glue coating device 200 is used to evenly coat the glue on the side of the wafer to be peeled away from the base layer to form an adhesive layer on the wafer to be peeled. The pulling device 300 is located above the support platform 110 and includes a lifting mechanism 310 and a connecting member 320, and the connecting member 320 is connected to the driving end of the lifting mechanism 310, and the connecting member 320 can be connected to the wafer to be peeled through the adhesive layer. Through the cooperation of the supporting device 100, the glue coating device 200 and the pulling device 300, it is convenient for the operator to separate the base layer in the silicon carbide ingot 2 from the chip to be peeled off, and realize the peeling operation of the silicon carbide ingot 2. In addition, due to the buffering effect of the adhesive layer and the pretreatment of the ultrasonic device 600, it is possible to effectively avoid the surface of the chip to be peeled off from being damaged when the chip to be peeled off is separated from the base layer.

[0062] The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. For those skilled in the art, the present invention may have various modifications and variations. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention shall be included in the protection scope of the present invention.

Claims

1. A silicon carbide laser stripping device, characterized in that: include: A carrying device (100), the carrying device (100) comprising a support platform (110), the support platform (110) being used to carry a silicon carbide ingot (2) modified by laser irradiation, the silicon carbide ingot (2) comprising a base layer and a wafer to be peeled off, the base layer being placed on the support platform (110); An ultrasonic device (600), the ultrasonic device (600) comprising an ultrasonic water pool (610) for placing the silicon carbide crystal ingot (2), the ultrasonic water pool (610) being used to emit ultrasonic waves propagating in a predetermined direction, the predetermined direction being perpendicular to the cleavage plane of the silicon carbide crystal ingot (2); a glue coating device (200), the glue coating device (200) being used to uniformly coat glue on a side of the wafer to be peeled away from the base layer, so as to form an adhesive layer on the wafer to be peeled; A tearing device (300), the tearing device (300) is located above the support platform (110) and comprises a lifting mechanism (310) and a connecting piece (320), the connecting piece (320) is connected to a driving end of the lifting mechanism (310), and the connecting piece (320) can be connected to the wafer to be peeled through the adhesive layer; The tearing device (300) is used to drive the connecting member (320) to move in the height direction via a lifting mechanism (310), so that the connecting member (320) is bonded to the wafer to be peeled off and the wafer to be peeled off the base layer.

2. The silicon carbide laser stripping device according to claim 1, characterized in that: The bearing device (100) further comprises a rotating member (120) connected to the bearing platform (110), wherein the rotating member (120) is used to drive the bearing platform (110) to rotate along a preset axis, wherein the preset axis is perpendicular to the bearing surface of the bearing platform (110).

3. The silicon carbide laser stripping device according to claim 2, characterized in that: The support platform (110) is provided with a bearing area, the base layer is placed in the bearing area, and the axis of the bearing area, the axis of the support platform (110) and the preset axis are coaxial.

4. The silicon carbide laser stripping device according to claim 1, characterized in that: The carrying device (100) further comprises a first heat exchange component connected to the support platform (110), wherein the first heat exchange component is used for exchanging heat with the support platform (110).

5. The silicon carbide laser stripping device according to claim 1, characterized in that: The support platform (110) is provided with a plurality of evenly distributed adsorption members, and the support platform (110) adsorbs the base layer of the silicon carbide crystal ingot (2) through the adsorption members; And / or the lifting mechanism (310) is one of a driving cylinder, a driving oil cylinder or a screw motor.

6. The silicon carbide laser peeling device according to claim 1, characterized in that: A graphite layer (330) is provided on a side of the connecting member (320) away from the lifting mechanism (310), and the graphite layer (330) is used for bonding with the wafer to be peeled off.

7. The silicon carbide laser stripping device according to claim 6, characterized in that: The tearing device (300) further comprises a power supply structure (340) electrically connected to the graphite layer (330) for changing the temperature of the graphite layer (330).

8. The silicon carbide laser stripping device according to claim 1, characterized in that: The silicon carbide laser stripping device further comprises a frame (500) and a sliding block (510) arranged on the top of the frame (500); the sliding block (510) can move relative to the frame (500) along a preset direction; the glue coating device (200) and the tearing device (300) are both mounted on the sliding block (510) and arranged at intervals along the preset direction.

9. The silicon carbide laser stripping device according to claim 8, characterized in that: The silicon carbide laser stripping device further comprises a material tray (400), wherein the material tray (400) is located below the sliding block (510) and is arranged at intervals with the carrying device (100) along the preset direction.

10. A silicon carbide laser stripping method, applied to the silicon carbide laser stripping device according to any one of claims 1 to 9, for stripping the wafer to be stripped from the base layer, characterized in that: The method comprises: Placing the silicon carbide ingot (2) modified by laser irradiation into the ultrasonic water pool (610) with the cleavage surface of the silicon carbide ingot (2) facing upwards, and starting the ultrasonic water pool (610) so that the propagation direction of the ultrasonic wave emitted by the ultrasonic water pool (610) is perpendicular to the cleavage surface of the silicon carbide ingot (2); Placing the silicon carbide crystal ingot (2) after ultrasonic treatment on the support platform (110), with the wafer to be peeled off of the silicon carbide crystal ingot (2) facing upwards; Controlling the glue coating device (200) to move to directly above the wafer to be peeled off, so that the glue coating device (200) evenly coats the glue on the wafer to be peeled off; The pulling and splitting device (300) is controlled to move to the position directly above the wafer to be peeled off, and the pulling and splitting device (300) is controlled to peel the wafer to be peeled off from the base layer.

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