Metal material OLED deposition mask

Abstract

The invention relates to a metal material OLED deposition mask. In particular, the deposition mask includes a deposition region and a non-deposition region, where the deposition region includes an active portion and a non-active portion, where the active portion includes a plurality of through-holes, and the non-active portion includes a plurality of through-holes. The plurality of through holes include small surface holes in a depth direction from one surface and large surface holes communicating with the small surface holes in the depth direction from another surface opposite to the one surface, and island-shaped portions located between the plurality of large surface holes on the other surface, and wherein, the non-deposition region includes a first groove portion including a groove in a depth direction of the deposition mask, and wherein the deposition region includes a second groove portion in a non-effective portion of the deposition region.

Description

[0001] This application is a divisional application of the patent application with the application date of August 24, 2018 (the filing date of the divisional application is February 2, 2023), the application number of 202310109595.3, and the invention name of "Metallic material OLED deposition mask and residual stress measurement method of deposition mask". In addition, the 202310109595.3 patent application is a divisional application of the invention patent application with the application date of August 24, 2018, the application number of 201880058019.8, and the invention name of "Metallic material deposition mask for OLED pixel deposition and its manufacturing method". Technical Field

[0002] Embodiments relate to a metal material deposition mask for organic light emitting diode (OLED) pixel deposition and a method for manufacturing the same. In particular, the deposition mask according to the embodiments is used to produce a high-resolution OLED panel with 500 PPI or higher. Background Art

[0003] Since a display device having high resolution and low power consumption is required, various display devices such as a liquid crystal display device and an electroluminescent display device have been developed.

[0004] Since electroluminescent display devices have more excellent characteristics than liquid crystal display devices, such as lower light emission, lower power consumption, and higher resolution, etc., electroluminescent display devices have attracted attention as next-generation display devices.

[0005] There are organic light emitting display devices and inorganic light emitting display devices in the electric field display device. That is, the electric field display device can be divided into organic light emitting display devices and inorganic light emitting display devices according to the material of the light emitting layer.

[0006] Among them, organic light emitting display devices have received attention because they have a wide viewing angle, a fast response speed, and are required to have low power consumption.

[0007] The organic material constituting such a light emitting layer may be formed to have a pattern for forming pixels on a substrate by a fine metal mask method.

[0008] In this case, the fine metal mask, i.e., the deposition mask, can have through holes corresponding to the pattern to be formed on the substrate, and the patterns of red (R), green (G), and blue (B) forming pixels can be formed by depositing organic material after aligning the fine metal mask to the substrate.

[0009] Recently, various electronic devices such as virtual reality (VR) devices require display devices with ultra-high definition (UHD). Therefore, a fine metal mask having a fine-sized through hole capable of forming an ultra-high resolution (UHD-level) pattern is required.

[0010] On the metal plate, which may be used as a deposition mask, a plurality of through holes may be formed through an etching process.

[0011] At this time, when the surface roughness in the longitudinal direction of the metal plate is different from the surface roughness in the lateral direction of the metal plate, the adhesion of the photoresist layer arranged on the surface of the metal plate may be different from each other according to the direction. That is, when the deviation between the surface roughness in the longitudinal direction of the metal plate and the surface roughness in the lateral direction of the metal plate is large, due to the difference in the adhesion of the photoresist layer, a difference in the degree of etching may occur according to the direction. Therefore, it is impossible to form a through hole with a desired size, and there is a problem that the uniformity of the aperture of the through hole may be reduced. In addition, in the deposition mask, the disappearance and unevenness of the island-shaped portion may occur due to the difference in the adhesion of the photoresist layer, and therefore, unevenness may occur between the through holes during the tensioning process before the pixel deposition, and there is a problem that it is difficult to deposit the pixel at the target position using the deposition mask.

[0012] Therefore, there is a need for a deposition mask having a new structure capable of uniformly forming a high-resolution or ultra-high-resolution (UHD-level) pattern having 500 PPI or more without deposition failure, and a method of manufacturing the same. Summary of the invention

[0013] Technical issues

[0014] Embodiments are directed to providing a deposition mask capable of uniformly forming a pattern having a high resolution of about 500 PPI or more or an ultra-high resolution (UHD level) of about 800 PPI or more without deposition failure, and a method of manufacturing the same.

[0015] In addition, the embodiment is directed to provide a metal plate capable of minimizing a warping phenomenon caused by internal stress.

[0016] In addition, the embodiment is directed to providing a method capable of effectively measuring residual stress of a metal plate used in a process of manufacturing a deposition mask having a high resolution of 400 PPI or more. In detail, the embodiment is directed to providing a measurement method capable of measuring residual stress regardless of the thickness of the metal plate.

[0017] In addition, the embodiments are directed to providing a deposition mask capable of improving uniformity of a position, a shape, etc. of a through hole formed on a metal plate by minimizing internal stress.

[0018] In addition, embodiments are directed to providing a deposition mask capable of minimizing length deformation such as total pitch deformation or relaxation during stretching by ensuring rigidity.

[0019] Furthermore, embodiments are directed to providing a deposition mask capable of uniformly depositing an OLED pixel pattern while ensuring rigidity regardless of the location of a through hole.

[0020] Technical problems to be solved by the proposed embodiments are not limited to the above-mentioned technical problems, and other technical problems not mentioned may be clearly understood by those skilled in the art to which the proposed embodiments pertain from the following description.

[0021] Technical Solution

[0022] In a metal material deposition mask for OLED pixel deposition according to an embodiment of the present invention, the deposition mask includes a deposition area for forming a deposition pattern and a non-deposition area other than the deposition area, wherein the deposition area includes a plurality of effective portions spaced apart in a longitudinal direction and an ineffective portion other than the effective portion, wherein the effective portion includes: a plurality of small surface holes formed on one surface; a plurality of large surface holes formed on another surface opposite to the one surface; through holes connecting the small surface holes and the large surface holes; and an island portion located between the plurality of through holes, wherein the deposition mask has a resolution of 500 PPI or higher, wherein the diameter of the through hole is 33 μm or less and the distance between the corresponding centers of two adjacent through holes in the through hole is 48 μm. m or less, the inclination angle of the large surface pores relative to the other surface is 40 degrees to 55 degrees, the average center line average surface roughness in the longitudinal direction and the average center line average surface roughness in the lateral direction of the non-deposition area are 0.1μm to 0.3μm, the average 10-point average surface roughness Rz in the longitudinal direction and the average 10-point average surface roughness in the lateral direction of the non-deposition area are 0.5μm to 2.0μm, the deviation of the value of the average center line average surface roughness in the longitudinal direction relative to the average center line average surface roughness in the lateral direction is less than 50%, and the deviation of the value of the average 10-point average surface roughness in the longitudinal direction relative to the average 10-point average surface roughness in the lateral direction is less than 50%.

[0023] In addition, in a metal material deposition mask for OLED pixel deposition according to an embodiment of the present invention, the deposition mask includes a deposition area for forming a deposition pattern and a non-deposition area other than the deposition area, wherein the deposition area includes a plurality of effective portions spaced apart in a longitudinal direction and an ineffective portion other than the effective portion, wherein the effective portion includes: a plurality of small surface holes formed on one surface; a plurality of large surface holes formed on another surface opposite to the one surface; through holes connecting the small surface holes and the large surface holes; and an island portion located between the plurality of through holes, wherein the deposition mask has a resolution of 500 PPI or higher, wherein the diameter of the through hole is 33 μm or less and the distance between the corresponding centers of two adjacent through holes in the through hole is 48 μm. m or less, the inclination angle of the large surface pores relative to the other surface is 40 degrees to 55 degrees, the average center line average surface roughness in the longitudinal direction and the average center line average surface roughness in the lateral direction of the island-shaped portion are 0.1μm to 0.3μm, and the average 10-point average surface roughness Rz in the longitudinal direction and the average 10-point average surface roughness in the lateral direction of the non-deposition area are 0.5μm to 2.0μm, and the deviation of the value of the average center line average surface roughness in the longitudinal direction relative to the average center line average surface roughness in the lateral direction is less than 50%, and the deviation of the value of the average 10-point average surface roughness in the longitudinal direction relative to the average 10-point average surface roughness in the lateral direction is less than 50%.

[0024] In addition, a method for manufacturing a metal material deposition mask for OLED pixel deposition includes: a first step: preparing a metal plate, rolling and annealing are performed on the metal plate and the metal plate has a predetermined thickness, wherein the average center line average surface roughness and the average 10-point average surface roughness in the rolling direction are less than the average center line average surface roughness and the average 10-point average surface roughness in the transverse direction; a second step: surface treating the metal plate so that the average center line average surface roughness in the rolling direction and the average center line average surface roughness in the transverse direction are respectively in the range of 0.1 μm to 0.3 μm, and the average 10-point average surface roughness in the rolling direction and the average 10-point average surface roughness in the transverse direction are respectively in the range of 0.5 μm to 2.0 μm; a third step, forming a plurality of large surface holes, a plurality of small surface holes, and a plurality of through holes formed by the large surface holes and the small surface holes by coating and developing a patterned photoresist layer on the surface of the metal plate and etching the metal plate.

[0025] Beneficial Effects

[0026] According to an embodiment, a deposition mask capable of minimizing deposition defects in a deposition mask made of a metal material for OLED pixel deposition having a resolution of 500 PPI or more may be provided.

[0027] According to an embodiment, the roughness of the metal plate used to manufacture the deposition mask in the longitudinal direction and the lateral direction may have a deviation of 50% or less. Therefore, the metal plate can improve the adhesion with the photoresist layer regardless of the direction. Therefore, the deposition mask according to the embodiment can improve the uniformity of the island portion and the uniformity of the through-hole size.

[0028] In addition, according to an embodiment, the large surface hole of the through hole has a first cross-sectional inclination angle in the longitudinal direction, and has a second cross-sectional inclination angle greater than the first cross-sectional inclination angle in the lateral direction. Therefore, in the deposition mask of the embodiment, the thickness of the central portion of the ribs arranged in the longitudinal direction can be increased by the difference between the first cross-sectional inclination angle and the second cross-sectional inclination angle. Therefore, in an embodiment, the rigidity of the deposition mask can be ensured. In addition, in an embodiment, since the rigidity of the deposition mask is ensured, the length deformation can be minimized. In addition, in an embodiment, since the rigidity of the deposition mask is ensured, the uniformity of the shape of the mask pattern and the uniformity of the position of the through hole can be increased. In addition, in an embodiment, due to the increase in uniformity, the pattern deposition efficiency of the deposition mask can be improved.

[0029] In addition, according to the embodiment, the inclination angle of the large surface holes of the through holes arranged in a direction perpendicular to the moving direction of the organic material deposition container is reduced. Therefore, the deposition mask according to the embodiment can uniformly deposit the OLED pixel pattern in all areas regardless of the position of the through holes. BRIEF DESCRIPTION OF THE DRAWINGS

[0030] Figure 1 is a perspective view illustrating an organic material deposition apparatus including a deposition mask according to an embodiment.

[0031] Figures 2 to 4 is a conceptual diagram describing a process of depositing an organic material on a substrate using a deposition mask according to an embodiment.

[0032] Figure 5 is a view showing a plan view of a deposition mask according to an embodiment.

[0033] Figure 6a is a view showing a plan view of an effective portion of a deposition mask.

[0034] Figure 6b is a photograph showing a plan view of an effective portion of a deposition mask.

[0035] Figure 6c is Figure 6a or Figure 6b A view in which a cross-sectional view taken along line AA' and a cross-sectional view taken along line BB' are overlapped.

[0036] Figure 7 is a view illustrating another plan view of a deposition mask according to an embodiment.

[0037] Figure 8 is a deposition mask according to an embodiment along Figure 6a or Figure 6b A cross-sectional view taken along line BB' in FIG.

[0038] Fig. 9 are views showing the rolling steps of a metal material.

[0039] Fig.10 and Fig.11 It shows that Fig. 9 A view of a metal plate having a predetermined thickness after rolling and annealing.

[0040] Fig.12 and Fig.13 is based on Fig.11 SEM image of the metal plate.

[0041] Fig.14 is a view showing a step of preparing a metal plate having a predetermined thickness and etching the metal plate to be thinner than the predetermined thickness to have the surface roughness of the embodiment.

[0042] Fig.15 and Fig.16 is a SEM photograph of a non-deposition region of a deposition mask according to an embodiment.

[0043] Fig.17 2 is a view illustrating a process of manufacturing a deposition mask according to an example.

[0044] Fig.18 is a graph showing measured values ​​of roughness of a non-deposition area of ​​a deposition mask according to an example in a longitudinal direction, a diagonal direction, and a lateral direction.

[0045] Fig.19 is a view illustrating adhesion of a photoresist layer depending on surface roughness of a non-deposition region of a deposition mask according to an example.

[0046] Fig. 20 is a view showing a shape obtained by half-etching one surface of a metal plate to evaluate the shape of an island-shaped portion of a deposition mask according to an example.

[0047] Fig.21is a graph showing measured values ​​of roughness of a non-deposition region of a deposition mask according to a comparative example in a longitudinal direction, a diagonal direction, and a lateral direction.

[0048] Fig. 22 is a view showing adhesion of a photoresist layer depending on surface roughness of a non-deposition region of a deposition mask according to a comparative example.

[0049] Fig.23 is a view showing a shape obtained by half-etching one surface of a metal plate to evaluate the shape of an island-shaped portion of a deposition mask according to a comparative example.

[0050] Fig.24 is a view showing a metal plate around which a raw material of a deposition mask has been wound.

[0051] Fig.25 is a view used to describe the conventional residual stress measurement method.

[0052] Fig.26 is a view for describing a sample metal plate manufactured from a metal plate according to an example.

[0053] Fig. 27 is a view for describing a residual stress measuring method according to an example.

[0054] Fig.28 and Fig.29 is a view illustrating a deposition pattern formed by a deposition mask according to an embodiment.

[0055] Fig.30 is a view showing a plan view of an effective portion of a deposition mask according to another embodiment of the present invention.

[0056] Fig.31 is a section in which the cross sections overlap to describe the Fig.30 The cross section taken along the line A-A' is the same as that taken along Fig.30 View of the height difference and size between the cross sections taken along line BB'.

[0057] Fig.32 is shown along Fig.30 A view of a cross-sectional view taken along line BB' in FIG.

[0058] Fig.33 is shown along Fig.30 A view of a cross-sectional view taken along line CC' in FIG.

[0059] Fig.34 is shown along Fig.30 A view of a cross-sectional view taken along line D-D' in FIG.

[0060] Fig.35 is a view showing a plan view of an effective portion of a deposition mask according to still another embodiment of the present invention.

[0061] Fig.36 It shows Fig.35 A cross-sectional view of the second through hole in FIG.

[0062] Fig.37 It shows Fig.35 A cross-sectional view of the third through hole in FIG. DETAILED DESCRIPTION

[0063] Hereinafter, embodiments will be described in detail with reference to the accompanying drawings.

[0064] However, the spirit and scope of the present invention are not limited to a part of the described embodiments and may be implemented in various other forms, and one or more elements of the embodiments may be selectively combined and replaced within the spirit and scope of the present invention.

[0065] In addition, unless explicitly defined and described in other ways, the terms (including technical terms and scientific terms) used in the embodiments of the present invention may be interpreted as the same meaning as the meaning generally understood by those of ordinary skill in the art to which the present invention belongs, and such as those defined in commonly used dictionaries may be interpreted as having the meaning consistent with its meaning in the context of the relevant technology. In addition, the terms used in the embodiments of the present invention are used to describe the embodiments and are not intended to limit the present invention.

[0066] In the present specification, unless particularly stated otherwise in the wording, a singular form may also include a plural form, and may include at least one combination of all combinations that can be combined with A, B, and C when described in "at least one (or more) of A (and), B, and C." In addition, when describing elements of the embodiments of the present invention, terms such as first, second, A, B, (a), and (b) may be used.

[0067] These terms are only used to distinguish an element from other elements, and these terms are not limited to the nature, order or sequence of the elements. In addition, when an element is described as being "connected", "coupled" or "connected" to another element, it may include not only the case where the element is directly "connected", "coupled" or "connected" to other elements, but also the case where the element is "connected", "coupled" or "connected" to another element between the element and the other elements.

[0068] In addition, when described as being formed or arranged “on (above)” or “below (below)” of each element, “on (above)” or “below (below)” may include not only a case where two elements are directly connected to each other, but also a case where one or more other elements are formed or arranged between the two elements. In addition, when expressed as “on (above)” or “below (below)”, it may include not only an upper direction but also a lower direction based on one element.

[0069] Will refer to Figures 1 to 4 A process of depositing an organic material on a substrate using a deposition mask according to an embodiment will be described.

[0070] Reference Figures 1 to 4 , the organic material deposition apparatus may include a deposition mask 100 , a mask frame 200 , a substrate 300 , an organic material deposition container 400 , and a vacuum chamber 500 .

[0071] The deposition mask 100 may include a metal. For example, the deposition mask may include iron (Fe) and nickel (Ni). The deposition mask 100 may include a plurality of through holes TH at an effective portion for deposition. The deposition mask 100 may be a substrate for a deposition mask including a plurality of through holes TH. At this time, the through holes may be formed to correspond to a pattern to be formed on the substrate. In addition to the effective portion including the deposition area, the deposition mask 100 may also include an ineffective portion.

[0072] The mask frame 200 may include an opening 205. A plurality of through holes of the deposition mask 100 may be provided on a region corresponding to the opening 205. Thus, the organic material supplied to the organic material deposition container 400 may be deposited on the substrate 300. The deposition mask may be deposited and fixed on the mask frame 200. For example, the deposition mask may be drawn and fixed on the mask frame 200 by welding.

[0073] That is, the mask frame 200 includes a plurality of frames 201, 202, 203, and 204 surrounding the opening 205. The plurality of frames 20, 202, 203, and 204 may be connected to each other. The mask frame 200 faces each other in the x-direction and includes a first frame 201 and a second frame 202 extending in the y-direction. In addition, the mask frame 200 faces each other in the y-direction and includes a third frame 203 and a fourth frame 204 extending in the x-direction. The first frame 201, the second frame 202, the third frame 203, and the fourth frame 204 may be rectangular frames connected to each other. The mask frame 200 may be made of a material that is less deformed during welding of the deposition mask 130, for example, a metal having high rigidity.

[0074] Reference Figure 2 and Figure 3, during the deposition process, the deposition mask 100 may be pulled in opposite directions at the end portion provided on the outermost portion of the deposition mask 100. In the deposition mask 100, one end portion of the deposition mask 100 and the other end portion opposite to the one end portion may be pulled in opposite directions in the longitudinal direction of the deposition mask 100. As an example, the tensile direction, the x-axis direction, and the longitudinal direction of the deposition mask 100 may all be the same direction. One end portion and the other end portion of the deposition mask 100 may face each other and be arranged in parallel. One end portion of the deposition mask 100 may be one of the end portions forming the four side surfaces provided on the outermost portion of the deposition mask 100. For example, the deposition mask 100 may be pulled at a tensile force of 0.1 kgf to 2 kgf. Specifically, the deposition mask 100 may be pulled at a tensile force of 0.4 kgf to 1.5 kgf to be fixed on the mask frame 200. Therefore, the stress of the deposition mask 100 may be reduced. However, the embodiment is not limited thereto, and the deposition mask 100 may be pulled by various pulling forces that may reduce stress thereof to be fixed on the mask frame 200 .

[0075] Then, the deposition mask 100 may be fixed to the mask frame 200 by welding the ineffective portion of the deposition mask 100. Subsequently, a portion of the deposition mask 100 disposed outside the mask frame 200 may be removed by a method such as cutting.

[0076] The substrate 300 may be a substrate for manufacturing a display device. For example, the substrate 300 may be a substrate 300 for depositing an organic material for an OLED pixel pattern. Patterns of red (R), green (G), and blue (B) may be formed on the substrate 300 to form pixels as three primary colors of light. That is, an RGB pattern may be formed on the substrate 300.

[0077] The organic material deposition container 400 may be a crucible. The organic material may be disposed inside the crucible. The organic material deposition container 400 may move in the vacuum chamber 500. That is, the organic material deposition container 400 may move in the y-axis direction in the vacuum chamber 500. That is, the organic material deposition container 400 may move in the lateral direction of the deposition mask 100 in the vacuum chamber 500. That is, the organic material deposition container 400 may move in the vacuum chamber 500 in a direction perpendicular to the stretching direction of the deposition mask 100.

[0078] When a heat source and / or an electric current is supplied to the crucible as the organic deposition container 400 in the vacuum chamber 500 , an organic material may be deposited on the substrate 100 .

[0079] Figure 4 is a view showing that a plurality of deposition patterns are formed on a substrate 300 through a plurality of through holes of a deposition mask 100 .

[0080] The deposition mask 100 may include a first surface 101 and a second surface 102 facing the first surface.

[0081] The first surface 101 of the deposition mask 100 may include the small surface holes V1, and the second surface 102 of the deposition mask 100 may include the large surface holes V2. The through holes may be connected through a communication portion CA to which the boundaries of the small surface holes V1 and the large surface holes V2 are connected.

[0082] The deposition mask 100 may include a first etched surface ES1 in the small surface hole V1. The deposition mask 100 may include a second etched surface ES2 in the large surface hole V2. A through hole may be formed by connecting the first etched surface ES1 in the small surface hole V1 with the second etched surface ES2 in the large surface hole V2. For example, the first etched surface ES1 in a small surface hole V1 may be connected with the second etched surface ES2 in a large surface hole V2 to form a through hole.

[0083] The width of the large surface hole V2 may be greater than the width of the small surface hole V1. At this time, the width of the small surface hole V1 may be measured at the first surface 101, and the width of the large surface hole V2 may be measured at the second surface 102.

[0084] The small surface hole V1 may be disposed toward the substrate 300. The small surface hole V1 may be disposed close to the substrate 300. Therefore, the small surface hole V1 may have a shape corresponding to the deposition material, ie, the deposition pattern DP.

[0085] The large surface hole V2 may be arranged toward the organic material deposition container 400. Therefore, the large surface hole V2 may accommodate the organic material supplied from the organic material deposition container 400 with a wide width, and a fine pattern may be quickly formed on the substrate 300 through the small surface hole V1 having a smaller width than that of the large surface hole V2.

[0086] Figure 5 is a view showing a plan view of a deposition mask according to an embodiment. Figure 5 , the deposition mask according to an embodiment may include a deposition area DA and a non-deposition area NDA.

[0087] The deposition area DA may be an area for forming a deposition pattern. One deposition mask may include a plurality of deposition areas DA. For example, the deposition area DA of the embodiment may include a plurality of effective portions AA1, AA2, and AA3 capable of forming a plurality of deposition patterns.

[0088] The plurality of active portions may include a first active portion AA1, a second active portion AA2, and a third active portion AA3. One deposition area DA may be any one of the first active portion AA1, the second active portion AA2, and the third active portion AA3.

[0089] In the case of a small display device such as a smart phone, an effective portion of any one of a plurality of deposition regions included in a deposition mask may be an effective portion for forming one display device. Therefore, one deposition mask may include a plurality of effective portions to simultaneously form a plurality of display devices. Therefore, a deposition mask according to an embodiment may improve processing efficiency.

[0090] Alternatively, in the case of a large display device such as a television, a plurality of effective portions included in one deposition mask may be a portion for forming one display device. In this case, the plurality of effective portions may be used to prevent deformation due to a load of the mask.

[0091] The deposition area DA may include a plurality of isolation areas IA1 and IA2 included in one deposition mask. The isolation areas IA1 and IA2 may be disposed between adjacent effective portions. The isolation areas IA1 and IA2 may be spacing areas between a plurality of effective portions. For example, the first isolation area IA1 may be disposed between the first effective portion AA1 and the second effective portion AA2. For example, the second isolation area IA2 may be disposed between the second effective portion AA2 and the third effective portion AA3. The isolation areas may distinguish adjacent effective areas, and a plurality of effective portions may be supported by one deposition mask.

[0092] The isolation regions IA1 and IA2 may have the same height as the island portion, the non-deposition region, or the non-active region. The isolation regions IA1 and IA2 may be regions that are not etched when forming the through hole.

[0093] The deposition mask may include non-deposition areas NDA at both sides in the longitudinal direction of the deposition area DA. The deposition mask according to the embodiment may include non-deposition areas NDA at both sides in the horizontal direction of the deposition area DA.

[0094] The non-deposition area NDA of the deposition mask may be an area that does not participate in deposition. The non-deposition area NDA may include frame fixing areas FA1 and FA2 for fixing the deposition mask to the mask frame. For example, the non-deposition area NDA of the deposition mask may include a first frame fixing area FA1 on one side of the deposition area DA, and may include a second frame fixing area FA2 on the other side opposite to the one side of the deposition area DA. The first frame fixing area FA1 and the second frame fixing area FA2 may be areas fixed to the mask frame by welding.

[0095] The non-deposition area NDA may include half-etched portions HF1 and HF2. For example, the non-deposition area NDA of the deposition mask may include a first half-etched portion HF1 on one side of the deposition area DA, and may include a second half-etched portion HF2 on the other side opposite to the one side of the deposition area DA. The first half-etched portion HF1 and the second half-etched portion HF2 may be regions in which grooves are formed in a depth direction of the deposition mask. The first half-etched portion HF1 and the second half-etched portion HF2 may have grooves having a thickness of about 1 / 2 of the deposition mask, thereby dispersing stress when the deposition mask is pulled.

[0096] The half-etched portion can be formed simultaneously when forming the small surface hole or the large surface hole. Therefore, the processing efficiency can be improved.

[0097] A surface treatment layer different from the material of the metal plate may be formed in the deposition area DA of the deposition mask, and the surface treatment layer may not be formed in the non-deposition area NDA. Alternatively, a surface treatment layer different from the material of the metal plate may be formed only on one surface of the deposition mask or on another surface opposite to one surface. Alternatively, a surface treatment layer different from the material of the metal plate may be formed only on a portion of one surface of the deposition mask. For example, one surface and / or another surface of the deposition mask, and the entire portion and / or a portion of the deposition mask may include a surface treatment layer having an etching rate lower than that of the material of the metal plate, thereby improving the etching factor. Therefore, the deposition mask of the embodiment can efficiently form a through hole with a fine size. As an example, the deposition mask of the embodiment can efficiently form a deposition pattern with a high resolution of 500PPI or higher. Here, the surface treatment layer may include a material different from the material of the metal plate, or may include a metal material of a different composition having the same element.

[0098] The half-etched portion may be formed in the unactive portion UA ​​of the deposition area DA. The half-etched portion may be dispersed in the entire portion or a portion of the unactive portion UA ​​to be arranged in plural so as to disperse stress when the deposition mask is pulled.

[0099] In addition, the half-etched portion may be formed in the frame fixing region and / or the peripheral region of the frame fixing region. Therefore, the stress of the deposition mask generated when the deposition mask is fixed to the mask frame and / or when the deposition material is deposited after the deposition mask is fixed to the mask frame can be uniformly dispersed. Therefore, the deposition mask can be maintained to have uniform through holes.

[0100] The frame fixing areas FA1 and FA2 of the mask frame for fixing to the non-deposition area NDA may be disposed between the half-etched portions HF1 and HF2 of the non-deposition area NDA and the effective portions of the deposition area DA adjacent to the half-etched portions HF1 and HF2. For example, the first frame fixing area FA1 may be disposed between the first half-etched portion HF1 of the non-deposition area NDA and the first effective portion AA1 of the deposition area DA adjacent to the first half-etched portion HF1. ​​For example, the second frame fixing area FA2 may be disposed between the second half-etched portion HF2 of the non-deposition area NDA and the third effective portion AA3 of the deposition area DA adjacent to the second half-etched portion HF2. Therefore, a plurality of deposition pattern portions may be fixed simultaneously.

[0101] The deposition mask may include semicircular opening portions at both ends in the horizontal direction X. The non-deposition area NDA of the deposition mask may include a semicircular opening portion at each of the two ends in the horizontal direction. For example, the non-deposition area NDA of the deposition mask may include an opening portion, the center of which in the vertical direction Y is open on one side in the horizontal direction. For example, the non-deposition area NDA of the deposition mask may include an opening portion, the center of which in the vertical direction is open on the other side opposite to the one side in the horizontal direction. That is, the two ends of the deposition mask may include opening portions at a point 1 / 2 of the length in the vertical direction. For example, the two ends of the deposition mask may be shaped like a horseshoe.

[0102] The half-etched portion included in the deposition mask of the embodiment can be formed in various shapes. The half-etched portion may include a semicircular groove portion. The groove may be formed on at least one of a surface of the deposition mask and another surface opposite to the one surface. Preferably, the half-etched portion may be formed on a surface corresponding to the small surface hole (the surface side to be deposited). Therefore, the half-etched portion can be formed to have a small surface hole at the same time, thereby improving the processing efficiency. In addition, the half-etched portion can disperse the stress that may be generated due to the size difference between the large surface holes.

[0103] Alternatively, the half-etched portion may be formed on both sides of the deposition mask to disperse the stress of the deposition mask. In this case, the half-etched area of ​​the half-etched portion may be widened in a plane corresponding to the first surface hole (the surface side to be deposited). That is, the deposition mask according to the embodiment may include a half-etched portion because grooves are formed on the first surface and the second surface of the deposition mask, respectively. In detail, the depth of the groove of the half-etched portion formed on the first surface may be greater than the depth of the groove of the half-etched portion formed on the second surface. Therefore, the half-etched portion can disperse the stress that may occur due to the size difference between the small surface hole and the large surface hole. The formation of the small surface hole, the large surface hole and the half-etched portion can make the surface areas on the first surface and the second surface of the deposition mask similar to each other, thereby preventing the through hole from shifting.

[0104] In addition, the grooves formed on the first surface and the second surface may be formed to be shifted relative to each other. Therefore, the half-etched portion may not pass.

[0105] The half-etched portion may include a curved surface and a flat surface. The flat surface of the first half-etched portion HF1 may be arranged adjacent to the first active area AA1, and the flat surface may be arranged horizontally to have an end in the longitudinal direction of the deposition mask. The curved surface of the first half-etched portion HF1 may have a convex shape toward one end in the longitudinal direction of the deposition mask. For example, the curved surface of the first half-etched portion HF1 may be formed so that a point 1 / 2 of the length in the vertical direction of the deposition mask corresponds to the radius of the semicircle.

[0106] The flat surface of the second half-etched portion HF2 may be arranged adjacent to the third active area AA3, and the flat surface may be arranged horizontally to have an end in the longitudinal direction of the deposition mask. The curved surface of the second half-etched portion HF2 may have a convex shape toward the other end in the longitudinal direction of the deposition mask. For example, the curved surface of the second half-etched portion HF2 may be formed such that a point 1 / 2 of the length in the vertical direction of the deposition mask corresponds to the radius of the semicircle.

[0107] At the same time, the curved surfaces of the opening portions positioned at both ends of the deposition mask may be directed toward the half-etched portion. Therefore, the opening portions at both ends of the deposition mask may have the shortest separation distance at a point 1 / 2 of the length in the vertical direction of the first or second half-etched portion and the deposition mask.

[0108] Although not shown in the drawings, the half-etched portion may have a quadrangular shape. The first half-etched portion HF1 and the second half-etched portion HF2 may have a rectangular or square shape.

[0109] The deposition mask according to the embodiment may include a plurality of half-etched portions. The deposition mask according to the embodiment may include a plurality of half-etched portions in at least one of the deposition area DA and the non-deposition area NDA. The deposition mask according to the embodiment may include a half-etched portion only in the uneffective portion UA. The uneffective portion UA ​​may be a region other than the effective portion AA.

[0110] The deposition mask according to the embodiment may include two half-etched portions. Although not shown in the drawings, the deposition mask according to the embodiment may include four half-etched portions. For example, the half-etched portion may include an even number of half-etched portions, thereby effectively dispersing stress. The deposition mask according to the embodiment may be provided only in the non-deposition area NDA.

[0111] It is preferable to form the half-etched portion symmetrically in the X-axis direction or the Y-axis direction with respect to the center of the mask. In this way, the tension in the two directions can be equalized.

[0112] The length d1 of the first half etched portion HF1 or the second half etched portion HF2 in the vertical direction may correspond to the length d2 of the opening portion in the vertical direction. Therefore, when the deposition mask is pulled, the stress may be uniformly dispersed, thereby reducing the deformation (wave deformation) of the deposition mask. Therefore, the deposition mask according to the embodiment may have uniform through holes, thereby improving the deposition efficiency of the pattern. Preferably, the length d1 of the first half etched portion HF1 or the second half etched portion HF2 in the vertical direction may be about 80% to 200% of the length d2 of the opening portion in the vertical direction (d1: d2 = 0.8 to 2: 1). The length d1 of the first half etched portion HF1 or the second half etched portion HF2 in the vertical direction may be about 90% to about 150% of the length d2 of the opening portion in the vertical direction (d1: d2 = 0.9 to 1.5: 1). A length d1 of the first half etched portion HF1 or the second half etched portion HF2 in the vertical direction may be about 95% to about 110% of a length d2 of the opening portion in the vertical direction (d1:d2=0.95 to 1.1:1).

[0113] The deposition mask may include a plurality of effective portions AA1 , AA2 , and AA3 spaced apart in a longitudinal direction and an uneffective portion UA ​​except for the effective portions.

[0114] The effective portions AA1, AA2, and AA3 of the deposition mask may include a plurality of through holes TH and an island portion IS supported between the plurality of through holes TH. The island portion IS may refer to a portion that is not etched in one surface or the other surface of the effective portion of the deposition mask when the through hole is formed. In detail, the island portion IS may be an unetched area between the through hole and the through hole on the other surface of the large surface hole of the effective portion of the deposition mask on which the through hole is formed. Therefore, the island portion IS may be disposed in parallel to one surface of the deposition mask.

[0115] The island portion IS may be disposed coplanarly with the other surface of the deposition mask. Therefore, the island portion IS may have the same thickness as at least a portion of the inactive portion on the other surface of the deposition mask. In detail, the island portion IS may have the same thickness as the unetched portion of the inactive portion on the other surface of the deposition mask. Therefore, the deposition uniformity of the sub-pixel may be improved by the deposition mask.

[0116] Alternatively, the island portion IS may be disposed in a flat surface parallel to the other surface of the deposition mask. Here, the parallel flat surfaces may include: through the etching process around the island portion IS, the height difference between the other surface of the deposition mask where the island portion IS is disposed and the other surface of the deposition mask where the ineffective portion is not etched is ±1 μm or less.

[0117] The island portion IS may be located between adjacent through-holes among the plurality of through-holes. That is, a region other than the through-holes may be the island portion IS in the effective portions AA1, AA2, and AA3 of the deposition mask 100.

[0118] The effective portions AA1, AA2 and AA3 may include a plurality of small surface holes V1 formed on one surface of the deposition mask 100, a plurality of large surface holes V2 formed on another surface opposite to the one surface, and through holes TH formed by connecting portions CA in which boundaries between the small surface holes and the large surface holes are connected.

[0119] The deposition mask 100 may include an unactive portion UA ​​disposed at the periphery of the active area.

[0120] The effective portion AA may be an inner region connected to the outer periphery of the through holes for depositing organic materials located at the outermost portion of the plurality of through holes. The uneffective portion UA ​​may be an outer region connected to the outer periphery of the through holes for depositing organic materials located at the outermost portion of the plurality of through holes.

[0121] The unactive portion UA ​​is an area other than the active area of ​​the deposition area DA and the non-deposition area NDA. The unactive portion UA ​​may include outer areas OA1, OA2, and OA3 surrounding the periphery of the active areas AA1, AA2, and AA3.

[0122] The deposition mask according to the embodiment may include a plurality of outer areas OA1, OA2, and OA3. The number of outer areas may correspond to the number of effective portions. That is, one effective portion may include one outer area spaced apart from an end of one effective portion by a predetermined distance in the horizontal direction and the vertical direction.

[0123] The first active portion AA1 may be included in the first outer area OA1. The first active portion AA1 may include a plurality of through holes for forming a deposition material. The first outer area OA1 surrounding the circumference of the first active portion AA1 may include a plurality of through holes.

[0124] The shape of the through hole TH of the first effective portion AA1 may correspond to the shape of the through hole of the first outer area OA1. Therefore, the uniformity of the through holes included in the first effective portion AA1 may be improved. For example, the shape of the through hole TH of the first effective portion AA1 and the shape of the through hole of the first outer area OA1 may be circular. However, the embodiment is not limited thereto, and the through hole may have various shapes, such as a diamond pattern, an elliptical pattern, etc.

[0125] The plurality of via holes included in the first outer area OA1 serves to reduce poor etching of via holes located at the outermost portion of the effective portion. Therefore, the deposition mask according to the embodiment can improve uniformity of the plurality of via holes located in the effective portion and can improve the quality of a deposition pattern formed by the deposition mask.

[0126] The shape of the through hole included in the effective portion may partially correspond to the shape of the through hole included in the ineffective portion. As an example, the through hole included in the effective portion may have a shape different from the shape of the through hole located at the edge portion of the ineffective portion. Therefore, the stress difference can be adjusted according to the position of the deposition mask.

[0127] The second active portion AA2 may be included in the second outer area OA2. The second active portion AA2 may have a shape corresponding to the first active portion AA1. The second outer area OA2 may have a shape corresponding to the first outer area OA1.

[0128] The second outer area OA2 may also include two through holes in the horizontal direction and the vertical direction, respectively, starting from the through hole located at the outermost part of the second effective part AA2. For example, in the second outer area OA2, two through holes may be arranged in a row in the horizontal direction at the upper part and the lower part of the through hole located at the outermost part of the second effective part AA2, respectively. For example, in the second outer area OA2, two through holes may be arranged in a row in the vertical direction at the left and right sides of the through hole located at the outermost part of the second effective part AA2, respectively. The plurality of through holes included in the second outer area OA2 is used to reduce the poor etching of the through holes located at the outermost part of the effective part. Therefore, the deposition mask according to the embodiment can improve the uniformity of the plurality of through holes located in the effective part, and can improve the quality of the deposition pattern manufactured by the deposition mask.

[0129] The third active portion AA3 may be included in the third outer area OA3. The third active portion AA3 may include a plurality of through holes for forming a deposition material. The third outer area OA3 surrounding the circumference of the third active portion AA3 may include a plurality of through holes.

[0130] The third effective portion AA3 may have a shape corresponding to that of the first effective portion AA1. The third outer area OA3 may have a shape corresponding to that of the first outer area OA1.

[0131] The value of the surface roughness measured in the non-deposition area NDA except the half-etched portions HF1 and HF2 of the deposition mask according to the embodiment may have a predetermined range in the diagonal direction, which is located at about 45 degrees in the longitudinal direction (x direction) and the lateral direction (y direction). The diagonal direction may be an inclined direction of about +45 degrees or about -45 degrees, and may refer to an angle between the x direction and the y direction. The diagonal direction may include an angle between +40 degrees and +50 degrees or -40 degrees and -50 degrees.

[0132] In the non-deposition area DA, the average centerline average surface roughness in the longitudinal direction, the average centerline average surface roughness in the direction of approximately +45 degrees on the diagonal, the average centerline average surface roughness in the direction of approximately -45 degrees on the diagonal, and the average centerline average surface roughness in the lateral direction may be 0.1 μm to 0.3 μm, and in the non-deposition area DA, the average 10-point average surface roughness in the longitudinal direction, the average 10-point average surface roughness in the direction of approximately +45 degrees on the diagonal, the average 10-point average surface roughness in the direction of approximately -45 degrees on the diagonal, and the average 10-point average surface roughness in the lateral direction may be 0.5 μm to 2.0 μm. For example, in the non-deposition area DA, the average centerline average surface roughness in the longitudinal direction, the average centerline average surface roughness in the direction of approximately +45 degrees on the diagonal, the average centerline average surface roughness in the direction of approximately -45 degrees on the diagonal, and the average centerline average surface roughness in the lateral direction may be 0.1 μm to 0.2 μm, and in the non-deposition area DA, the average 10-point average surface roughness in the longitudinal direction, the average 10-point average surface roughness in the direction of approximately +45 degrees on the diagonal, the average 10-point average surface roughness in the direction of approximately -45 degrees on the diagonal, and the average 10-point average surface roughness in the lateral direction may be 0.5 μm to 1.5 μm. For example, in the non-deposition area DA, the average centerline average surface roughness in the longitudinal direction, the average centerline average surface roughness in the direction of approximately +45 degrees on the diagonal, the average centerline average surface roughness in the direction of approximately -45 degrees on the diagonal, and the average centerline average surface roughness in the lateral direction may be 0.1 μm to 0.15 μm, and in the non-deposition area DA, the average 10-point average surface roughness in the longitudinal direction, the average 10-point average surface roughness in the direction of approximately +45 degrees on the diagonal, the average 10-point average surface roughness in the direction of approximately -45 degrees on the diagonal, and the average 10-point average surface roughness in the lateral direction may be 0.5 μm to 1.0 μm.

[0133] In an embodiment of an OLED deposition mask having a quad high definition (QHD) level resolution of 500 PPI or more, a diameter of a through hole may be 33 μm or less, a distance between each center of two adjacent through holes in a plurality of through holes may be 48 μm or less, an inclination angle of a large surface hole relative to another surface may be 40 to 55 degrees, a deviation ((|(Ra(RD)-Ra(TD))| / Ra(TD)x100(%))) of a value of an average surface roughness (Ra(RD)) of an average center line in a longitudinal direction relative to an average surface roughness (Ra(TD)) of an average center line in a lateral direction may be less than 50%, and a deviation ((|(Rz(RD)-Rz(TD))| / Rz(TD)x100(%))) of a value of an average surface roughness (Rz(RD)) of 10 points in a longitudinal direction relative to an average surface roughness (Rz(TD)) of 10 points in a lateral direction) may be less than 50%.

[0134] In an embodiment of an OLED deposition mask having a UHD-level resolution of 800PPI or higher, a diameter of a through hole may be 20 μm or less, an inclination angle of a large surface hole relative to another surface may be 45 to 55 degrees, a distance between each center of two adjacent through holes in a plurality of through holes may be 32 μm or less, a deviation ((|(Ra(RD)-Ra(TD))| / Ra(TD)x100(%))) of a value of an average surface roughness (Ra(RD)) of an average center line in a longitudinal direction relative to an average surface roughness (Ra(TD)) of an average center line in a lateral direction may be 30% or less, and a deviation ((|(Rz(RD)-Rz(TD))| / Rz(TD)x100(%))) of a value of an average surface roughness (Rz(RD)) of 10 points in a longitudinal direction relative to an average surface roughness (Rz(TD)) of 10 points in a lateral direction may be 30% or less. For example, the deviation of the value of the average surface roughness (Ra(RD)) of the average center line in the longitudinal direction relative to the average surface roughness (Ra(TD)) of the average center line in the lateral direction (|(Ra(RD)-Ra(TD))| / Ra(TD)x100(%))) can be 15% or less, and the deviation of the value of the average surface roughness (Rz(RD)) of the average of 10 points in the longitudinal direction relative to the average surface roughness (Rz(TD)) of the average of 10 points in the lateral direction (|(Rz(RD)-Rz(TD))| / Rz(TD)x100(%))) can be 15% or less.

[0135] For example, the deviation of the value of the average surface roughness (Ra(RD)) of the average center line in the longitudinal direction relative to the average surface roughness (Ra(TD)) of the average center line in the lateral direction (|(Ra(RD)-Ra(TD))| / Ra(TD)x100(%))) can be 13% or less, and the deviation of the value of the average surface roughness (Rz(RD)) of the average 10 points in the longitudinal direction relative to the average surface roughness (Rz(TD)) of the average 10 points in the lateral direction (|(Rz(RD)-Rz(TD))| / Rz(TD)x100(%))) can be 10% or less.

[0136] The deposition area may include an ineffective portion in an area other than the effective portion, and in the surface roughness of the island-shaped portion in the ineffective portion, the average centerline average surface roughness in the longitudinal direction, the average centerline average surface roughness in the diagonal direction, and the average centerline average surface roughness in the lateral direction may be 0.1 μm to 0.3 μm, and the average 10-point average surface roughness in the longitudinal direction, the average 10-point average surface roughness in the diagonal direction, and the average 10-point average surface roughness in the lateral direction may be 0.5 μm to 2.0 μm, and in the longitudinal direction The deviation of the value of the average surface roughness (Ra(RD)) of the average center line relative to the average surface roughness (Ra(TD)) of the average center line in the lateral direction (|(Ra(RD)-Ra(TD))| / Ra(TD)x100(%))) can be less than 50%, and the deviation of the value of the average surface roughness (Rz(RD)) of the average 10 points in the longitudinal direction relative to the average surface roughness (Rz(TD)) of the average 10 points in the lateral direction (|(Rz(RD)-Rz(TD))| / Rz(TD)x100(%))) can be less than 50%.

[0137] Alternatively, in the surface roughness of the island-shaped portion in the ineffective portion, the average centerline average surface roughness in the longitudinal direction, the average centerline average surface roughness in the diagonal direction, and the average centerline average surface roughness in the lateral direction may be 0.1 μm to 0.2 μm, and the average 10-point average surface roughness in the longitudinal direction, the average 10-point average surface roughness in the diagonal direction, and the average 10-point average surface roughness in the lateral direction may be 0.5 μm to 1.5 μm, and the average centerline average surface roughness in the longitudinal direction may be 0.1 μm to 0.2 μm. The deviation of the roughness value (Ra(RD)) from the average surface roughness (Ra(TD)) of the average center line in the lateral direction (|(Ra(RD)-Ra(TD))| / Ra(TD)x100(%))) can be less than 30%, and the deviation of the average surface roughness value of the average of 10 points in the longitudinal direction (Rz(RD)) from the average surface roughness (Rz(TD)) of the average of 10 points in the lateral direction (|(Rz(RD)-Rz(TD))| / Rz(TD)x100(%))) can be less than 30%.

[0138] Alternatively, in the surface roughness of the island-shaped portion in the ineffective portion, the average center line average surface roughness in the longitudinal direction, the average center line average surface roughness in the diagonal direction, and the average center line average surface roughness in the lateral direction may be 0.1 μm to 0.15 μm, and the average 10-point average surface roughness in the longitudinal direction, the average 10-point average surface roughness in the diagonal direction, and the average 10-point average surface roughness in the lateral direction may be 0.5 μm to 1.0 μm, and the average center line average surface roughness in the longitudinal direction may be 0.1 μm to 0.15 μm. The deviation of the roughness value (Ra(RD)) from the average surface roughness (Ra(TD)) of the average center line in the lateral direction (|(Ra(RD)-Ra(TD))| / Ra(TD)x100(%))) can be less than 15%, and the deviation of the average surface roughness value of the average of 10 points in the longitudinal direction (Rz(RD)) from the average surface roughness (Rz(TD)) of the average of 10 points in the lateral direction (|(Rz(RD)-Rz(TD))| / Rz(TD)x100(%))) can be less than 15%.

[0139] In the isolation areas IA1 and IA2 located between adjacent effective parts AA1, AA2 and AA3, the average centerline average surface roughness in the longitudinal direction, the average centerline average surface roughness in the diagonal direction, and the average centerline average surface roughness in the lateral direction can be 0.1μm to 0.3μm, and in the ineffective part, the average 10-point average surface roughness in the longitudinal direction, the average 10-point average surface roughness in the diagonal direction, and the average 10-point average surface roughness in the lateral direction can be 0.5μm to 2.0μm.

[0140] Figure 6a , Figure 6b and Figure 7 are views and photographs showing a plan view of an effective portion of a deposition mask. Figure 6a , Figure 6b and Figure 7 It is a plan view or a photograph of an effective portion of any one of the first effective portion AA1, the second effective portion AA2, and the third effective portion AA3. Figure 6a , Figure 6b and Figure 7 1 and 2 are views for describing the shape of through holes and the arrangement between the through holes, and of course, the deposition mask according to the embodiment is not limited to the number of through holes in the drawing.

[0141] Reference Figure 6a and Figure 6b , the deposition mask 100 may include a plurality of through holes. The plurality of through holes may have a circular shape. Therefore, a diameter Cx in a horizontal direction and a diameter Cy in a vertical direction of the through hole may correspond to each other.

[0142] Alternatively, refer to Figure 7, the through hole may have an elliptical shape. Therefore, the diameter Cx in the horizontal direction and the diameter Cy in the vertical direction of the through hole may be different from each other. For example, the diameter Cx in the horizontal direction of the through hole may be greater than the diameter Cy in the vertical direction. However, the embodiment is not limited thereto, and of course, the through hole may have a rectangular shape, an octagonal shape, or a circular octagonal shape. As an example, in the case of measuring the diameter Cx in the horizontal direction and the diameter Cy in the vertical direction of a reference hole as any one of the through holes, the deviation between the diameter Cx in the horizontal direction and the diameter Cy in the vertical direction of each hole adjacent to the reference hole can be realized as 2% to 10%. That is, when the size deviation between adjacent holes of a reference hole is realized as 2% to 10%, deposition uniformity can be ensured. The size deviation between the reference hole and the adjacent hole may be 4% to 9%. For example, the size deviation between the reference hole and the adjacent hole may be 5% to 7%. For example, the size deviation between the reference hole and the adjacent hole may be 2% to 5%. When the size deviation between the reference hole and the adjacent hole is less than 2%, the occurrence rate of moire in the OLED panel after deposition can be increased. When the size deviation between the reference hole and the adjacent hole is greater than 10%, the occurrence rate of color unevenness in the OLED panel after deposition can be increased. The average deviation of the diameter of the through hole can be ±5μm. For example, the average deviation of the diameter of the through hole can be ±3μm. For example, the average deviation of the diameter of the through hole can be ±1μm. In an embodiment, the deposition efficiency can be improved by achieving a size deviation between the reference hole and the adjacent hole within ±3μm.

[0143] The through holes may be arranged in a row or may be arranged to cross each other according to the direction. Figure 6a and Figure 6b The through holes may be arranged in rows along the vertical axis, and may be arranged in rows along the horizontal axis.

[0144] The first through holes TH1 and the second through holes TH2 may be arranged in a row along the horizontal axis. In addition, the third through holes TH3 and the fourth through holes TH4 may be arranged in a row along the horizontal axis.

[0145] The first through holes TH1 and the third through holes TH3 may be arranged in a row along the vertical axis. In addition, the second through holes TH2 and the fourth through holes TH4 may be arranged in a row along the vertical axis.

[0146] When the through holes are arranged in a row along the vertical axis and the horizontal axis, the island portion is placed between two through holes adjacent to each other in the diagonal direction, where the vertical axis and the horizontal axis intersect. That is, the island portion can be located between two adjacent through holes positioned relative to each other in the diagonal direction.

[0147] The island portion IS may be disposed between the first through hole TH1 and the fourth through hole TH4. In addition, the island portion IS may be disposed between the second through hole TH2 and the third through hole TH3. The island portion IS may be disposed along an inclination angle direction of about +45 degrees and an inclination angle direction of about -45 degrees relative to a horizontal axis crossing two adjacent through holes, respectively. Here, the inclination angle direction of about ±45 degrees may represent a diagonal direction between the horizontal axis and the vertical axis, and the diagonal inclination angle is measured on the same plane of the horizontal axis and the vertical axis.

[0148] Reference Figure 7 The through holes are arranged in a row on any one of the vertical axis or the horizontal axis, and can be arranged to cross each other on one axis.

[0149] The first through holes TH1 and the second through holes TH2 may be disposed in a row on the horizontal axis. The third through holes TH3 and the fourth through holes TH4 may be disposed to pass through the first through holes TH1 and the second through holes TH2 on the vertical axis, respectively.

[0150] When the through holes are arranged in a row in any one direction of the vertical axis and the horizontal axis and pass through the other direction, the island portion may be positioned between two adjacent through holes in the other direction of the vertical axis and the horizontal axis. Alternatively, the island portion may be positioned between three through holes adjacent to each other. Two through holes of the three adjacent through holes are through holes arranged in a row, and the remaining one through hole may refer to a through hole in the area between two through holes at adjacent positions that may be arranged in a direction corresponding to the direction of the row. The island portion IS may be disposed between the first through hole TH1, the second through hole TH2, and the third through hole TH3. Alternatively, the island portion IS may be disposed between the second through hole TH2, the third through hole TH3, and the fourth through hole TH4.

[0151] Figure 6a , Figure 6b and Figure 7 The island portion IS may refer to an unetched surface between the through holes in the other surface of the deposition mask forming the large surface hole of the effective portion AA. In detail, the island portion IS may be another surface of the deposition mask that is not etched except for the second etched surface ES2 and the through hole TH located in the large surface hole in the effective portion AA of the deposition mask. The deposition mask of the embodiment can be used to deposit high-resolution to ultra-high-resolution OLED pixels with a resolution of 500PPI to 800PPI or higher.

[0152] For example, the deposition mask of the embodiment can be used to form a high-resolution deposition pattern of quadruple high definition (QHD) with a resolution of 500 PPI or higher. For example, the deposition mask of the embodiment can be used to deposit OLED pixels having a pixel count of 2560*1440 or more in the horizontal and vertical directions and a resolution of 530 PPI or more. According to the deposition mask of the embodiment, based on a 5.5-inch OLED panel, the number of pixels per inch can be 530 PPI or more. That is, an effective portion included in the deposition mask of the embodiment can be used to form a pixel count of 2560*1440 or more with a resolution of 2560*1440 or more.

[0153] For example, the deposition mask of the embodiment can be used to form an ultra-high-resolution deposition pattern of ultra-high definition (UHD) with a resolution of 700 PPI or higher. For example, the deposition mask of the embodiment can be used to form a deposition pattern with a UHD-level resolution for depositing OLED pixels having a pixel count of 3840*2160 or more in the horizontal and vertical directions and a resolution of 794 PPI (800 PPI level) or higher.

[0154] The diameter of a through hole may be the width between the connected portions CA. In detail, the diameter of a through hole may be measured at a point where the end of the inner surface in the small surface hole intersects the end of the inner surface in the large surface hole. The measuring direction of the diameter of the through hole may be any one of the horizontal direction, the vertical direction, and the diagonal direction. The diameter of the through hole measured in the horizontal direction may be 33 μm or less. Alternatively, the diameter of the through hole measured in the horizontal direction may be 33 μm or less. Alternatively, the diameter of the through hole may be the average value of the values ​​measured in the horizontal direction, the vertical direction, and the diagonal direction, respectively.

[0155] Therefore, the deposition mask according to the embodiment may achieve QHD level resolution.

[0156] For example, the diameter of the through hole in the horizontal direction may be 20 μm or less. Therefore, the deposition mask according to the embodiment may achieve UHD-level resolution.

[0157] For example, the diameter of the through hole may be 15 μm to 33 μm. For example, the diameter of the through hole may be 19 μm to 33 μm. For example, the diameter of the through hole may be 20 μm to 17 μm. When the diameter of the through hole exceeds 33 μm, it may be difficult to achieve a resolution of 500 PPI or higher. On the other hand, when the diameter of the through hole is less than 15 μm, poor deposition may occur.

[0158] The diameter of the through hole can be measured based on the green (G) pattern. This is because the G pattern among the R, G and B patterns has a low visual recognition rate, so a larger number than the R and B patterns is required, and the pitch between the through holes may be narrower than the R and B patterns.

[0159] The measuring direction of the diameter of the through hole and the measuring direction of the distance between two through holes may be the same. The distance between the through holes may be a value measured by measuring the distance between two adjacent through holes in the horizontal direction or the vertical direction.

[0160] Reference Figure 6a and Figure 6b , the spacing between two adjacent through holes in the plurality of through holes in the horizontal direction may be 48 μm or less. For example, the spacing between two adjacent through holes in the plurality of through holes in the horizontal direction may be 20 μm to 48 μm. For example, the spacing between two adjacent through holes in the plurality of through holes in the horizontal direction may be 30 μm to 35 μm.

[0161] Here, the interval may refer to a distance P1 between the center of the first through hole TH1 and the center of the second through hole TH2 that are adjacent in a horizontal direction.

[0162] Alternatively, here, the spacing may refer to the spacing P2 between the center of the first island-shaped portion and the center of the second island-shaped portion adjacent in the horizontal direction. Here, the center of the island-shaped portion may be the center of the other surface that is not etched between four adjacent through holes in the horizontal direction and the vertical direction. For example, based on the first through hole TH1 and the second through hole TH2 adjacent in the horizontal direction, the center of the island-shaped portion may refer to the point where the horizontal axis and the vertical axis that connect the edge of an island-shaped portion IS located in the area between the third through hole TH3 vertically adjacent to the first through hole TH1 and the fourth through hole TH4 vertically adjacent to the second through hole TH2 intersect.

[0163] Alternatively, the pitch may refer to a pitch P2 between the center of a first island portion and the center of a second island portion adjacent to the first island portion in three adjacent through holes in the horizontal direction.

[0164] Reference Figure 7 , the spacing may refer to the spacing P2 between the center of the first island-shaped portion and the center of the second island-shaped portion adjacent in the horizontal direction. Here, the center of the island-shaped portion may be the center of the other unetched surface between one through hole and two adjacent through holes in the vertical direction. Alternatively, here, the center of the island-shaped portion may be the center of the other unetched surface between two through holes and one through hole adjacent in the vertical direction. That is, the center of the island-shaped portion is the center of the unetched surface between three adjacent through holes, and these three adjacent through holes may refer to a triangle formed when the centers are connected.

[0165] For example, the center of the island portion may be the center of another surface that is not etched between the third through hole TH3 and the first and second through holes TH1 and TH2, wherein the third through hole TH3 is at least partially or completely positioned in an area between each of the first through holes TH1 and the second through holes TH2 that are adjacent to each other in the horizontal direction in the vertical direction.

[0166] In the deposition mask according to the embodiment, the diameter of the through hole is 33 μm or less, and the pitch between the through holes is 48 μm or less, and thus OLED pixels with a resolution of 500 PPI or more may be deposited. That is, QHD-level resolution may be implemented using the deposition mask according to the embodiment.

[0167] The diameter of the via holes and the spacing between the via holes may be dimensions for forming a green sub-pixel. The deposition mask may be an OLED deposition mask for realizing quad high display pixels.

[0168] For example, the deposition mask may be used to deposit at least one of the red R, first green G1, blue B, and second green G2 sub-pixels. In detail, the deposition mask may be used to deposit the red R sub-pixel. Alternatively, the deposition mask may be used to deposit the blue B sub-pixel. Alternatively, the deposition mask may be used to simultaneously form the first green G1 sub-pixel and the second green G2 sub-pixel.

[0169] The pixel arrangement of the organic light emitting display device may be set in the order of "red R-first green G1-blue B-second green G2". In this case, red R-first green G1 may form one pixel RG, and blue B-second green G2 may form another pixel BG. In an organic light emitting display device having such an arrangement, since the deposition interval of the green light emitting organic material is narrower than the deposition interval of the red light emitting organic material and the blue light emitting organic material, a form of a deposition mask like the present invention may be required.

[0170] In the deposition mask according to the embodiment, the diameter of the through hole is 20 μm or less, and the pitch between the through holes is 32 μm or less, and thus, OLED pixels with a resolution of 800 PPI level may be deposited. That is, the deposition mask according to the embodiment may be used to achieve UHD level resolution.

[0171] The diameter of the through hole and the spacing between the through holes may be dimensions for forming a green sub-pixel. The deposition mask may be an OLED deposition mask for realizing ultra-high display pixels.

[0172] Reference Figure 6c , respectively describe Figure 6a and Figure 6b The cross section along the AA' direction and the cross section along the BB' direction.

[0173] Figure 6c is a view showing various cross sections, which are overlapped for the purpose of describing Figure 6a and Figure 6b The height difference and size between the cross section along the AA' direction and the cross section along the BB' direction.

[0174] First, we will describe Figure 6a and Figure 6b The cross section along the AA' direction is a cross section intersecting the center area between the first through hole TH1 and the third through hole TH3 adjacent to each other in the vertical direction. That is, the cross section along the AA' direction may not include the through hole.

[0175] The etching surface ES2 in the large surface hole and the island-shaped portion IS as the other surface of the deposition mask that is not etched and the etching surface ES2 in the large surface hole can be positioned in the cross section along the A-A' direction. Therefore, the island-shaped portion IS may include a surface parallel to one unetched surface of the deposition mask. Alternatively, the island-shaped portion IS may include a surface that is the same as or parallel to the other unetched surface of the deposition mask.

[0176] Next, we will describe Figure 6a and Figure 6b The cross section along the BB' direction is a cross section intersecting the center of each of the first through hole TH1 and the second through hole TH2 adjacent in the horizontal direction. That is, the cross section along the BB' direction may include a plurality of through holes.

[0177] One rib may be positioned between the third through hole TH3 and the fourth through hole TH4 adjacent in the direction BB'. Another rib may be positioned between the fourth through hole TH4 and a fifth through hole adjacent to the fourth through hole in the horizontal direction but positioned in the opposite direction to the third through hole TH3. One through hole may be positioned between the one rib and the other rib. That is, one through hole may be positioned between two ribs adjacent in the horizontal direction.

[0178] In the cross section along the BB' direction, a rib RB may be located as a region where the etching surface ES2 in the large surface hole and the etching surface ES2 in the adjacent large surface hole are connected to each other. Here, the rib RB may be a region where the boundaries of two adjacent large surface holes are connected. Since the rib RB is an etching surface, the rib RB may have a thickness smaller than that of the island portion IS.

[0179] For example, the island portion may have a width of 2 μm or more. That is, the width in a direction parallel to the other surface of the portion remaining unetched on the other surface may be 2 μm or less. When the width of one end and the width of the other end of an island portion are 2 μm or more, the total volume of the deposition mask may be increased. A deposition mask having such a structure ensures sufficient rigidity against a tensile force applied to an organic material deposition process, etc., and is therefore advantageous for maintaining uniformity of the through-hole.

[0180] Reference Figure 8 , will describe Figure 6a and Figure 6b The B-B' cross section and the Figure 6c 1 is an enlarged cross-section of the ribs RB of the active area and the through-holes between the ribs. In the deposition mask of this embodiment, the thickness of the active portion AA where the through-hole is formed by etching may be different from the thickness of the unetched unactive portion UA. In detail, the thickness of the rib RB may be less than the thickness in the unetched unactive portion UA.

[0181] In the deposition mask of the present embodiment, the thickness of the ineffective portion may be greater than the thickness of the effective portion. For example, in the deposition mask of the present embodiment, the maximum thickness of the ineffective portion or the non-deposition area may be 30 μm or less. For example, in the deposition mask of the present embodiment, the maximum thickness of the ineffective portion or the non-deposition area may be 25 μm or less. For example, in the deposition mask of the present embodiment, the maximum thickness of the ineffective portion or the non-deposition area may be 15 μm to 25 μm. When the maximum thickness of the ineffective portion or the non-deposition area of ​​the deposition mask according to the present embodiment is greater than 30 μm, it may be difficult to form a through hole with a fine size because the thickness of the metal plate material is thicker. When the maximum thickness of the ineffective portion or the non-deposition area of ​​the deposition mask according to the present embodiment is less than 15 μm, it may be difficult to form a through hole with a uniform size because the thickness of the metal plate material is thinner.

[0182] The maximum thickness T3 measured at the center of the rib RB may be 15 μm or less. For example, the maximum thickness T3 measured at the center of the rib RB may be 7 μm to 10 μm. For example, the maximum thickness T3 measured at the center of the rib RB may be 6 μm to 9 μm. When the maximum thickness T3 measured at the center of the rib RB is greater than 15 μm, it may be difficult to form an OLED deposition pattern with a high resolution of 500 PPI or greater. When the maximum thickness T3 measured at the center of the rib RB is less than 6 μm, it may be difficult to uniformly form a deposition pattern.

[0183] The height H1 of the small surface holes of the deposition mask may be 0.2 to 0.4 times the maximum thickness T3 measured at the center of the rib RB. For example, the maximum thickness T3 measured at the center of the rib RB may be 7 μm to 9 μm, and the height H1 between one surface of the deposition mask and the connecting portion may be 1.4 μm to 3 μm. The height H1 of the small surface holes of the deposition mask may be 3.5 μm or less. For example, the height of the small surface holes may be 0.1 μm to 3.2 μm. For example, the height of the small surface holes of the deposition mask may be 0.5 μm to 3.5 μm. For example, the height of the small surface holes of the deposition mask may be 2 μm to 3.2 μm. Here, the height may be measured along the thickness measurement direction of the deposition mask, that is, along the depth direction, and the height may be the height measured from one surface of the deposition mask to the connecting portion. In detail, the height may be measured along the direction corresponding to the thickness measurement direction of the deposition mask, that is, along the depth direction. Figure 4 , Figure 6a or Figure 6b The above horizontal direction (x direction) and vertical direction (y direction) in the plane form a 90-degree z-axis direction measurement.

[0184] When the height between one surface of the deposition mask and the communication portion is greater than 3.5 μm, poor deposition may occur due to a shadow effect in which a deposition material is diffused to a region larger than an area of ​​a through hole during OLED deposition.

[0185] The aperture W1 at one surface where the small surface hole V1 of the deposition mask is formed and the aperture W2 at the communication portion as the boundary between the small surface hole V1 and the large surface hole V2 may be similar to or different from each other. The aperture W1 at one surface where the small surface hole V1 of the deposition mask is formed may be larger than the aperture W2 at the communication portion.

[0186] For example, the difference between the aperture W1 at one surface of the deposition mask and the aperture W2 at the connected portion may be 0.01 μm to 1.1 μm. For example, the difference between the aperture W1 at one surface of the deposition mask and the aperture W2 at the connected portion may be 0.03 μm to 1.1 μm. For example, the difference between the aperture W1 at one surface of the deposition mask and the aperture W2 at the connected portion may be 0.05 μm to 1.1 μm.

[0187] When the difference between the aperture W1 at one surface of the deposition mask and the aperture W2 at the communication portion is greater than 1.1 μm, poor deposition may occur due to a shadow effect.

[0188] The inclination angle of the small surface hole measured on one surface of the deposition mask may be 89 degrees or less. The inclination angle of the small surface hole may refer to that it is measured at the rib RB. The inclination angle connecting one end E1 of the small surface hole to one end E2 of the connecting portion between the small surface hole and the large surface hole may be 89 degrees or less relative to one surface of the deposition mask. For example, the inclination angle connecting one end E1 of the small surface hole to one end E2 of the connecting portion between the small surface hole and the large surface hole may be 75 to 89 degrees relative to one surface of the deposition mask. For example, the inclination angle connecting one end E1 of the small surface hole to one end E2 of the connecting portion between the small surface hole and the large surface hole may be 78 to 89 degrees relative to one surface of the deposition mask. For example, the inclination angle connecting one end E1 of the small surface hole to one end E2 of the connecting portion between the small surface hole and the large surface hole may be 85 to 89 degrees relative to one surface of the deposition mask.

[0189] In other words, the inclination angle may be defined as follows. The inclination angle of the large surface hole may be an inner angle between a virtual first straight line corresponding to another flat surface of the deposition mask and a virtual second straight line connecting one end of the large surface hole and one end of the connecting portion. In addition, the inclination angle of the small surface hole may be an inner angle between a virtual third straight line corresponding to another flat surface of the deposition mask and a virtual fourth straight line connecting one end of the small surface hole and one end of the connecting portion.

[0190] Here, the small surface hole V1 may be formed on one surface of the deposition mask, and the large surface hole V2 may be formed on the other surface of the deposition mask. In addition, one surface of the deposition mask is used as a reference for measuring the inclination angle of the small surface hole, and the other surface of the deposition mask is used as a reference for measuring the inclination angle of the large surface hole.

[0191] When the inclination angle connecting one end E1 of the small surface hole located on one surface of the deposition mask and one end E2 of the communication portion between the small surface hole and the large surface hole exceeds 89 degrees, the shadow effect can be prevented, but the problem of organic matter remaining in the through hole during deposition may occur. Therefore, it may be difficult to form a deposition pattern with a uniform size.

[0192] When the inclination angle connecting one end E1 of the small surface hole on one surface of the deposition mask and one end E2 of the communication portion between the small surface hole and the large surface hole is less than 70 degrees, poor deposition may occur due to a shadow effect.

[0193] The inclination angle of the large surface hole V2 may be 55 degrees or less. The inclination angle of the large surface hole may refer to the inclination angle measured at the rib RB. The inclination angle connecting one end E3 of the large surface hole V2 with one end E2 of the connecting portion between the small surface hole and the large surface hole may be 40 to 55 degrees relative to the other surface opposite to the one surface of the deposition mask. Therefore, a deposition pattern with a high resolution of 500PPI or more may be formed, and at the same time, an island portion may exist on the other surface of the deposition mask.

[0194] The inclination angle connecting one end E3 of the large surface hole V2 and one end E2 of the communication portion between the small surface hole and the large surface hole may be 45 to 55 degrees relative to the other surface opposite to the one surface of the deposition mask. Therefore, a deposition pattern with a high resolution of 800 PPI or more may be formed, and at the same time, an island portion may exist on the other surface of the deposition mask.

[0195] Reference Figures 9 to 13 , steps of processing a metal plate for manufacturing a deposition mask according to an embodiment will be described.

[0196] Reference Fig. 9 , rolling the metal plate will be described. By passing between a plurality of rollers disposed above and below, the thickness of the metal plate used to manufacture the deposition mask can be reduced. For example, the metal plate of this embodiment can be thinner than the metal plate before rolling by cold rolling.

[0197] Reference Fig.10 , the cutting of the rolled metal plate will be described. For storage convenience, the metal plate used to manufacture the deposition mask can be rolled up. At this time, the direction in which the metal plate is rolled or the rolling direction can be represented as RD, and the direction perpendicular to the rolling direction (rolled direction) can be represented as TD. The rolling direction of the metal plate is the same as the longitudinal direction of the metal plate. The rolled metal plate can be cut into a length suitable for manufacturing the deposition mask.

[0198] Reference Fig.11 , the shape of the grains on the surface of the rolled metal plate will be described. On the rolled metal plate, the grains may be stretched in the rolling direction RD. Therefore, the metal plate may include a striped texture in the rolling direction. In detail, the surface of the rolled metal plate may be formed with striped irregularities along the rolling direction. That is, in the rolled metal plate, the components of the rolled texture will be developed on the surface. Here, the texture may refer to the selective arrangement state of the grains. For example, the surface of the rolled metal plate may include a texture component having a repeated striped shape.

[0199] Here, the size of the grains may be non-uniform depending on the direction. That is, the grain boundaries located on the surface of the rolled metal plate may have anisotropy.

[0200] For example, the length r1 of the grain in the rolling direction RD may be greater than the length r2 of the grain in the direction perpendicular to the rolling direction TD. For example, the length r1 of the grain in the rolling direction RD: the length r2 of the grain in the transverse direction TD perpendicular to the rolling direction may be 50:1 to 150:1. The specific grain size may vary depending on the recrystallization temperature, the thickness of the metal sheet, and the rolling process.

[0201] When forming a through hole in a rolled metal plate, the deviation of the grain size is greatly different between the rolling direction RD and the transverse direction TD, so there is a problem that the through hole diameter may be different depending on the direction. That is, there may be a problem that it is difficult to perform uniform etching in the rolling direction RD and the transverse direction TD due to the anisotropy of the grains.

[0202] The rolled metal plate can have an average center line average surface roughness Ra on the rolling direction RD and an average 10-point average surface roughness Rz that are less than the average center line average surface roughness Ra and the average 10-point average surface roughness Rz on the transverse direction TD. That is to say, the surface roughness can be different according to whether the rolled metal plate is in the rolling direction RD or in the transverse direction TD. Here, the average center line average surface roughness Ra and the average 10-point average surface roughness Rz can be used as the method for measuring surface roughness. For example, because the cold-rolled invar metal plate has an average center line average surface roughness Ra on the rolling direction RD and an average 10-point average surface roughness Rz that are less than the average center line average surface roughness Ra and the average 10-point average surface roughness Rz on the transverse direction TD, the adhesion of the photoresist layer may be different according to the direction. Therefore, when forming a through hole by depositing a patterned photoresist layer on the rolled metal plate, it may be difficult to form a through hole with a uniform aperture. In addition, due to a difference in adhesiveness of the photoresist layer according to a direction, stripping of the photoresist layer may occur, and thus it may be difficult to manufacture a deposition mask including an island portion having a uniform area.

[0203] The shape of the grains may be changed due to surface treatment of the surface of the rolled metal plate. The rolled metal plate may be surface treated by etching to reduce the thickness and reduce the anisotropy of the grains.

[0204] The surface of the surface-treated metal plate after rolling may include projections having various shapes, such as circular, elliptical, rectangular and random shapes. Among the plurality of projections on the surface of the surface-treated metal plate after rolling, the length r1 of the grains in the rolling direction RD may be the same as or different from the length r2 of the grains in the transverse direction TD.

[0205] In the case of forming a through hole using the surface-treated metal plate after rolling in the present embodiment, since the size of the grains in the rolling direction RD and the size of the grains in the transverse direction TD are similar to each other, the diameter of the through hole can be formed uniformly regardless of the direction. That is, in order to solve the etching unevenness according to the anisotropy of the grains, in the present embodiment, the through hole is formed by using the metal plate whose surface is surface-treated, thereby improving the consistency of the shape and diameter of the through hole and the consistency of the area of ​​the island portion.

[0206] The surface-treated metal sheet after rolling in the present embodiment may have a value within the range in which the average center line average surface roughness Ra in the rolling direction RD and the average center line average surface roughness Ra in the transverse direction TD correspond to each other.

[0207] The surface-treated metal plate after rolling in the present embodiment may have a value within the following range: the average 10-point average surface roughness Rz in the rolling direction RD and the average 10-point average surface roughness Rz in the transverse direction TD correspond to each other. That is, in the rolled metal plate, the range of the surface roughness may be the same or similar regardless of being in the rolling direction RD, the transverse direction TD or the diagonal direction.

[0208] For example, although the cold rolled Invar metal plate has the average center line average surface roughness Ra and the average 10-point average surface roughness Rz on the rolling direction RD before surface treatment, the average center line average surface roughness Ra and the average 10-point average surface roughness Rz on the transverse direction TD are smaller than the values, but the Invar metal plate can have the average center line average surface roughness Ra and the average 10-point average surface roughness Rz values ​​of the predetermined range that are independent of the direction after the surface treatment by etching. Therefore, in the metal plate after the surface treatment after rolling, the adhesion of the photoresist layer can be uniform and independent of the direction. Therefore, when forming a through hole by depositing a patterned photoresist layer on the metal plate that has been surface treated by etching after rolling, a through hole with a uniform aperture can be formed with a high yield. In addition, since the adhesion of the photoresist layer can be uniform and independent of the direction, the stripping of the photoresist layer can be prevented, so that a deposition mask with an island-shaped portion of uniform area can be manufactured. Therefore, a deposition mask manufactured using the metal plate of the embodiment can form fine and uniform through-holes with high productivity.

[0209] In the metal plate, the average centerline average surface roughness in the rolling direction RD, the average centerline average surface roughness in the transverse direction TD, and the average centerline average surface roughness in the 45 degree diagonal direction OD located between the rolling direction RD and the transverse direction TD may be 0.1 μm to 0.3 μm, respectively.

[0210] For example, in a metal plate, the average centerline average surface roughness in the rolling direction RD, the average centerline average surface roughness in the transverse direction TD, and the average centerline average surface roughness in the 45-degree diagonal direction OD between the rolling direction RD and the transverse direction TD may be 0.1 μm to 0.2 μm, respectively.

[0211] For example, in a metal plate, the average centerline average surface roughness in the rolling direction RD, the average centerline average surface roughness in the transverse direction TD, and the average centerline average surface roughness in the 45-degree diagonal direction OD between the rolling direction RD and the transverse direction TD may be 0.1 μm to 0.15 μm, respectively.

[0212] In the metal plate, an average 10-point average surface roughness in a rolling direction RD, an average 10-point average surface roughness in a transverse direction TD, and an average 10-point average surface roughness in a 45-degree diagonal direction OD between the rolling direction RD and the transverse direction TD may be 0.5 μm to 2.0 μm, respectively.

[0213] For example, on a metal plate, the average 10-point average surface roughness in the rolling direction RD, the average 10-point average surface roughness in the transverse direction TD, and the average 10-point average surface roughness in the 45-degree diagonal direction OD between the rolling direction RD and the transverse direction TD may be 0.5 μm to 1.5 μm, respectively.

[0214] For example, on the metal plate, the average 10-point average surface roughness in the rolling direction RD, the average 10-point average surface roughness in the transverse direction TD, and the average 10-point average surface roughness in the 45-degree diagonal direction OD between the rolling direction RD and the transverse direction TD can be 0.5 μm to 1.0 μm, respectively.

[0215] Fig.12 and Fig.13 is a SEM photograph of a metal plate having a predetermined thickness after rolling and annealing.

[0216] Fig.12 is a SEM photograph of the first test piece of Invar that had been rolled and annealed, magnified 5,000 times.

[0217] Fig.13 is a SEM photograph of a second test piece of Invar that had been rolled and annealed, magnified 5,000 times.

[0218] The surface roughness of the rolled and annealed Invar steel before surface treatment may have the following values. In the first test piece and the second test piece, the center line average surface roughness measured over the entire area having the first horizontal length and the second vertical length (the average center line average surface roughness Ra in the entire area) may be 0.06 μm to 0.1 μm. In the first test piece and the second test piece, the 10-point average surface roughness measured over the entire area having the first horizontal length and the second vertical length (the average 10-point average surface roughness Rz in the entire area) may be 0.8 μm to 1.5 μm.

[0219] Next, the following steps will be described: Fig.14 A test piece of the metal sheet BM shown in FIG. 1 which has been rolled and annealed is then etched and processed into a Fig.15 and Fig.16 The test piece shown in .

[0220] The predetermined thickness T0 of the rolled and annealed metal plate BM may be 30 μm or more. For example, the predetermined thickness T0 of the rolled and annealed metal plate BM may be 25 μm or more.

[0221] One side and / or both sides of the metal plate may be etched to produce a metal plate having a thickness T1 thinner than a predetermined thickness T0. After rolling and annealing, the thickness of the metal plate that has been subjected to the etching step may be a thickness T1 of 20 μm to 30 μm. The rolled and annealed metal plate having a predetermined thickness of 30 μm or more may have a thickness T1 of 20 μm to 30 μm by the etching step of the metal plate surface.

[0222] The rolled and annealed metal plate having a predetermined thickness T0 of 25 μm or more may have a thickness T1 of 15 μm to 25 μm through the etching step. Here, etching may include electrical etching or chemical etching.

[0223] The thickness T1 of the metal plate after the etching step may be 60% to 90% of the predetermined thickness T0 of the metal plate. Preferably, the thickness T1 of the metal plate after the etching step may be 70% to 80% of the predetermined thickness T0 of the metal plate.

[0224] Fig.15 and Fig.16 is a SEM photograph of a non-deposition region of a deposition mask according to an embodiment.

[0225] Fig.15 yes Fig.11 FIG. 1 is an SEM photograph of a first test piece in which a deviation in surface roughness is improved after surface treatment by etching the rolled and annealed Invar steel, the SEM photograph being magnified 5,000 times. Fig.16 yes Fig.12 FIG. 1 is an SEM photograph of a second test piece in which the deviation of the surface roughness is improved after the surface treatment by etching the rolled and annealed Invar steel, the SEM photograph being magnified 5,000 times.

[0226] The surface roughness of the etched Invar after rolling and annealing may have the following values. In the first test piece, the centerline average surface roughness measured over the entire area having the first horizontal length and the second vertical length (the average centerline average surface roughness in the entire area) may be 0.14 μm to 0.15 μm. In the second test piece, the centerline average surface roughness measured over the entire area having the first horizontal length and the second vertical length (the average centerline average surface roughness in the entire area) may be 0.14 μm to 0.15 μm.

[0227] In the first test piece, a 10-point average surface roughness measured over the entire region having the first horizontal length and the second vertical length (10-point average surface roughness in the entire region) may be 3.8 μm to 4.5 μm.

[0228] In the second test piece, a 10-point average surface roughness measured over the entire region having the first horizontal length and the second vertical length (10-point average surface roughness in the entire region) may be 3.8 μm to 4.5 μm.

[0229] Reference Fig.14 and Fig.17 , a process of manufacturing a deposition mask according to an embodiment will be described.

[0230] In a method for producing a metal material deposition mask for OLED pixel deposition, the deposition mask can be manufactured by the following steps: a first step of preparing a metal plate for rolling and annealing and having a predetermined thickness, wherein the average centerline average surface roughness and the average 10-point average surface roughness in the rolling direction are less than the average centerline average surface roughness and the average 10-point average surface roughness in the transverse direction; a second step of etching the metal plate into a metal plate thinner than the predetermined thickness, so that the average centerline average surface roughness in the rolling direction and the average centerline average surface roughness in the transverse direction are respectively in the range of 0.1 μm to 0.3 μm, and the average 10-point average surface roughness in the rolling direction and the average 10-point average surface roughness in the transverse direction are respectively in the range of 0.5 μm to 2.0 μm; and a third step of forming a plurality of large surface holes, a plurality of small surface holes, and a plurality of through holes formed by the large surface holes and the small surface holes by coating a patterned photoresist layer on the surface of the metal plate and developing the patterned photoresist layer and etching the metal plate.

[0231] First, refer to Fig.14 Describing the first step, a metal plate BM having a predetermined thickness T0 is prepared for rolling and annealing.

[0232] Here, the rolling may include cold rolling, and the annealing may include continuous annealing.

[0233] The base metal plate BM may include a metal material. The base metal plate BM may include a nickel alloy. For example, the base metal plate BM may be an alloy of nickel and iron. At this time, the nickel may be about 35% to 37% by weight, and the iron may be about 63% to 65% by weight. For example, the base metal plate BM may include invar, which includes about 35% to 37% by weight of nickel, about 63% to 65% by weight of iron, and trace amounts of at least one of C, Si, S, P, Cr, Mo, Mn, Ti, Co, Cu, Fe, Ag, Nb, V, In, and Sb. Here, a small amount may mean no more than 1% by weight. Specifically, here, a trace amount may refer to 0.5% by weight or less. However, the base metal plate BM is not limited thereto, and obviously may include various metal materials.

[0234] Since a nickel alloy such as Invar has a small thermal expansion coefficient, it has an advantage that the life of a deposition mask can be increased.

[0235] In the metal sheet prepared in the first step, the average center line average surface roughness Ra and the average 10-point average surface roughness Rz in the rolling direction RD are smaller than the average center line average surface roughness Ra and the average 10-point average surface roughness Rz in the transverse direction TD.

[0236] Next, we will refer to Fig.14 The second step of etching the metal plate to be thinner than a predetermined thickness is described.

[0237] One side and / or both sides of the metal plate may be etched to produce a metal plate having a thickness T1 thinner than a predetermined thickness T0. That is, the second step may include a step of isotropically etching the rolled and annealed metal plate.

[0238] The metal plate that has been subjected to the second step may include the following steps: etching the metal plate to be thinner than a predetermined thickness so that the average center line average surface roughness Ra in the rolling direction RD and the average center line average surface roughness Ra in the transverse direction TD are respectively in the range of 0.1 μm to 0.3 μm, and the average 10-point average surface roughness Rz in the rolling direction RD and the average 10-point average surface roughness Rz in the transverse direction TD are respectively in the range of 0.5 μm to 2.0 μm. The rolling direction RD is the longitudinal direction of the deposition mask. The transverse direction TD is a lateral direction perpendicular to the longitudinal direction of the deposition mask.

[0239] Optionally, the metal plate BM may include a step of forming an etching control layer.

[0240] For example, there is a problem that it is difficult to uniformly etch a nickel alloy such as Invar. That is, in a nickel alloy such as Invar, the etching rate increases in the initial stage of etching. Therefore, there is a problem that the etching factor of small surface holes may decrease. When the etching factor of small surface holes decreases, there may be the following problems: a deposition mask in which poor deposition occurs due to a shadow effect may be formed. Alternatively, due to side etching of large surface holes, stripping of the photoresist layer may occur. In addition, as the size of the through hole increases, it may be difficult to form a through hole with a fine size. In addition, the through hole is formed non-uniformly, so that the yield of the deposition mask is reduced.

[0241] Therefore, in an embodiment, an etching control layer for surface modification may be provided on the surface of a base metal plate with different compositions, contents, crystal structures and erosion rates. Here, surface modification may refer to a layer made of various materials provided on the surface to increase an etching factor.

[0242] That is, the etching control layer can be an etching barrier layer having an etching rate lower than that of the metal plate. The etching control layer can have a crystal plane and a crystal structure different from those of the metal layer. For example, since the etching control layer contains elements different from those of the metal layer, the crystal plane and the crystal structure can be different from each other.

[0243] In the same corrosion environment, the etching control layer can have a different corrosion potential than the corrosion potential of the base metal plate. For example, when the same etchant is applied at the same temperature for the same time, the etching control layer can have a different corrosion current or corrosion potential than the base metal plate.

[0244] The metal plate BM may include an etching control layer on one surface and / or both surfaces, the entire surface and / or the effective area of ​​the metal plate BM. The etching control layer may contain elements different from those of the metal plate, or may contain a larger content of a metal element with a slow erosion rate than the metal plate.

[0245] For example, the etching control layer may contain at least one metal of nickel (Ni), chromium (Cr), iron (Fe), titanium (Ti), manganese (Mn), oxygen (O), molybdenum (Mo), silver (Ag), zinc (Zn), nitrogen (N), aluminum (Al) and their alloys, and the content of at least one metal of nickel (Ni), chromium (Cr), iron (Fe), titanium (Ti), manganese (Mn), oxygen (O), molybdenum (Mo), silver (Ag), zinc (Zn), nitrogen (N), aluminum (Al) and their alloys may be greater than the content of these metals contained in the base metal plate. Preferably, the etching control layer may contain nickel (Ni). That is, after the second step, the third step is performed after further performing the step of forming a nickel deposition layer having a submicron thickness on a metal plate having a thickness thinner than a predetermined thickness.

[0246] In the case of further including such a surface treatment step, an etching control layer may be provided on the surface of the metal plate according to the embodiment. In the surface treatment step, an etching control layer of an element different from the metal plate BM is provided so that the erosion rate on the surface may be lower than the erosion rate of the raw material of the metal plate BM. Therefore, the etching factor of the deposition mask according to the embodiment may be increased. In addition, since the deposition mask according to the embodiment may uniformly form a plurality of through holes, the deposition efficiency of the R, G, and B patterns may be improved. Here, containing different elements may mean that the metal plate BM and the etching control layer contain at least one different element, or even if all elements are the same, alloys with different contents are contained.

[0247] Next, we will refer to Fig.17 The third step of forming a plurality of through holes is described.

[0248] The step of providing a patterned photoresist layer P1 on one surface of the metal plate will be described. The patterned photoresist layer P1 may be applied to one surface of the base metal plate and developed to form small surface holes. An etching barrier layer such as a coating or a film layer for preventing etching may be provided on the other surface opposite to the one surface of the base metal plate.

[0249] Next, a step of forming a groove on one surface of the metal plate by half-etching the opening portion of the photoresist layer P1 will be described.

[0250] The opening portion of the photoresist layer P1 may be exposed to an etchant or the like, and thus etching may occur in the opening portion of one surface of the metal plate where the photoresist layer P1 is not provided.

[0251] For example, a metal plate having a thickness T1 of 20 μm to 30 μm may be etched until a groove having a thickness of about 1 / 2 of the thickness of the metal plate is formed. In detail, the small surface hole may be formed by half etching. The depth of the groove formed by half etching may be about 10 μm to 15 μm.

[0252] For example, a metal plate having a thickness T1 of 15 μm to 25 μm may be etched until a groove having a thickness of about 1 / 2 of the thickness of the metal plate is formed. In detail, the small surface hole may be formed by half etching. The depth of the groove formed by half etching may be about 7.5 μm to 12.5 μm.

[0253] The step of forming the groove on one surface of the metal plate may be anisotropic etching or a semi-additive process (SAP). Therefore, in the groove formed by semi-etching, the etching rate in the depth direction (b direction) may be higher than the etching rate in the side etching (a direction) compared to isotropic etching.

[0254] The etching factor of the small surface holes can be 2.0 to 3.0. For example, the etching factor of the small surface holes can be 2.1 to 3.0. For example, the etching factor of the small surface holes can be 2.2 to 3.0.

[0255] Here, the etching factor may refer to the depth B of the etched small surface hole divided by the width A of the photoresist layer extending from the island-shaped portion on the small surface hole and protruding toward the center of the through hole (etching factor = B / A). A may represent the average of the width of one side of the photoresist layer protruding on one surface hole and the width of the other side opposite to the one side.

[0256] Next, a step of providing a patterned photoresist layer P2 on the other surface opposite to the one surface of the metal plate will be described. The patterned photoresist layer P2 having an opening portion may be provided on the other surface opposite to the one surface of the base metal plate so as to form a large surface hole. An etching barrier layer such as a coating or a film layer for preventing etching may be provided on one surface of the base metal plate.

[0257] The opening portion of the photoresist layer P2 may be exposed to the etchant, and thus etching may occur in the opening portion of the other surface of the metal plate where the photoresist layer P1 is not provided. The other surface of the metal plate may be etched by anisotropic etching or isotropic etching.

[0258] The opening portion of the photoresist layer is etched, and thus the groove on one surface of the metal plate can be connected to the large surface hole to form a through hole.

[0259] In the third step, 1) a patterned photoresist layer P1 is disposed on one surface of the metal plate, and a patterned photoresist layer P2 is disposed on the other surface of the metal plate. Then, 2) a through hole can be formed by etching one surface and the other surface of the metal plate simultaneously.

[0260] Alternatively, in the third step, 1) a patterned photoresist layer P1 may be disposed on one surface of the metal plate, and 2) a groove may be formed on only one surface of the metal plate by half-etching the opening portion of the photoresist layer P1. Then, 3) a patterned photoresist layer P2 may be disposed on the other surface of the metal plate. Then, 4) a through hole may be formed on the other surface of the metal plate by etching the opening portion of the photoresist layer P2.

[0261] Alternatively, in the second step, 1) the patterned photoresist layer P2 may be disposed on the other surface of the metal plate, and 2) the large surface hole may be formed on only the other surface of the metal plate by etching the opening portion of the photoresist layer P2. Then, 3) the patterned photoresist layer P1 may be disposed on one surface of the metal plate. Then, 4) a through hole connected to the large surface hole may be formed on one surface of the metal plate by half-etching the opening portion of the photoresist layer P1.

[0262] Next, the photoresist layer is removed, and a deposition mask can be formed by a third step of forming a plurality of large surface holes, a plurality of small surface holes, and a plurality of through holes formed by the large surface holes and the small surface holes. For example, the through holes can be formed by anisotropic etching.

[0263] The plurality of large surface holes are simultaneously formed on one surface, the plurality of small surface holes are simultaneously formed on another surface opposite to the one surface, and the plurality of through holes are simultaneously formed through a connecting portion to which the boundaries between the large surface holes and the small surface holes are connected, and thus, a deposition mask can be manufactured.

[0264] The deposition mask may include the same material as the metal plate. For example, the deposition mask may include a material having the same composition as the metal plate. For example, the island portion of the deposition mask may include the above-mentioned etching control layer. In detail, the surface of the island portion or the non-deposition area of ​​the deposition mask may include a nickel deposition layer. That is, nickel may remain on the surface of the non-deposition area or the unetched island portion of the metal plate.

[0265] In the deposition mask, the maximum thickness at the center of the island-shaped portion may be less than the maximum thickness T1 of the non-deposition area that is not subjected to etching to form a half-etched portion. For example, the maximum thickness at the center of the island-shaped portion may be less than 15μm. For example, the maximum thickness at the center of the island-shaped portion may be less than 10μm. However, the maximum thickness T1 in the non-deposition area of ​​the deposition mask may be 20μm to 30μm or 15μm to 25μm. The maximum thickness in the non-deposition area of ​​the deposition mask may be equal to the thickness of the metal plate prepared in the second step. Since the surfaces of the ineffective portion and the effective portion are completely etched in the second step, the thickness of the ineffective portion may be less than the predetermined thickness measured in the first step of the metal plate.

[0266] In order to manufacture a deposition mask with a high resolution of UHD and QHD levels, a thin metal plate is required. Therefore, a deposition mask can be manufactured using a metal plate that is rolled to have a thinner thickness. However, it has been determined that in a deposition mask manufactured by this method, the uniformity of the through-holes is reduced. That is, the density of the through-holes becomes higher due to the need for high resolution, and therefore it is necessary to form through-holes with fine and uniform sizes.

[0267] The inventors of the present invention have determined surface characteristics to determine the problem of reduced uniformity of through holes of rolled metal plates, and therefore, determined that the rolled metal plates have different surface roughness values ​​in the rolling direction and the lateral direction. Since the surface roughness of the rolled metal plate is a factor that determines the adhesion of the photoresist layer, it can be determined that when the rolled metal plate is used directly to make through holes, the uniformity is reduced. That is, in the case of using the rolled metal plate to make a deposition mask, it can be determined that uniform through holes are not formed because the etching rate in a specific direction is higher.

[0268] Therefore, the inventors of the present invention have obtained a deposition mask including through holes having uniform sizes and a method for manufacturing the same after performing a process step of controlling the surface roughness of a rolled metal plate within a predetermined range.

[0269] When the roughness is reduced to a predetermined range or less by etching as a surface treatment, the problem of reduced adhesion of the photoresist layer may occur. In addition, when the metal plate is etched to a thickness of 10 μm to 12 μm, there is a problem that the structure is deformed due to low rigidity when the deposition mask is pulled.

[0270] Therefore, the deposition mask according to the embodiment has a thickness of 20 μm to 30 μm, or 15 μm to 25 μm in a portion in which the half-etched portion is not formed in the non-deposition area, the average center line average surface roughness in the longitudinal direction and the average center line average surface roughness in the lateral direction of the non-deposition area are 0.1 μm to 0.3 μm, the average 10-point average surface roughness in the longitudinal direction and the average 10-point average surface roughness in the lateral direction are 0.5 μm to 2.0 μm, the deviation of the value of the average center line average surface roughness Ra (RD) in the longitudinal direction relative to the average center line average surface roughness Ra (TD) in the lateral direction is less than 50%, and the deviation of the value of the average 10-point average surface roughness Rz (RD) in the longitudinal direction relative to the average 10-point average surface roughness Rz (TD) in the lateral direction can be less than 50%.

[0271] Thus, a deposition mask including fine through-holes having a uniform size can be manufactured.

[0272] A high-resolution OLED pixel having 500 PPI or more and 800 PPI or more can be deposited with high yield using the deposition mask according to the embodiment. In addition, the consistency and accuracy of the position between the through hole and the OLED pattern can be improved.

[0273] Hereinafter, the present invention will be described in more detail with reference to examples and comparative examples. These examples are merely exemplary to describe the present invention in more detail. Therefore, the present invention is not limited to these examples.

[0274] In the comparative example, the metal sheet was rolled and annealed. In the example, the surface of the rolled and annealed metal sheet was treated with a ferric chloride-based acidic etchant.

[0275] <Experimental Example 1: SEM measurement results>

[0276] Fig.15 and Fig.16 An SEM photograph of the surface of an acid-treated metal sheet after rolling and annealing according to an example is shown.

[0277] Reference Fig.15 and Fig.16 It can be seen that on the surface of the metal plate of the example, the stripe shape in the rolling direction disappears or decreases. It can be seen that the grains on the surface of the metal plate are arranged in the same or different directions. That is, it can be seen that the grains on the surface of the metal plate are arranged in random directions.

[0278] Fig.12 and Fig.13 A SEM photograph of a surface of an Invar metal sheet according to a comparative example after rolling and annealing is shown.

[0279] Reference Fig.21 , it can be confirmed that the surface of the metal plate of the comparative example has stripe-shaped grains in the rolling direction.

[0280] In this embodiment, the surface of the metal plate can be processed to have grains independent of direction by surface treatment. In the experimental example, only the acid etchant is described, but it goes without saying that an alkaline etchant can be used.

[0281] <Experimental Example 2: Measurement Results of Ra and Rz in RD Direction, TD Direction, and Diagonal Direction>

[0282] The roughness measurement results of the example are measured using a roughness measurement device (NanoView, manufacturer: Nanosystem, product name: NV-E1000). Fig.18 , Table 1 and Table 2, and the roughness measurement results of the comparative example are shown in Fig.21 , as shown in Table 3 and Table 4.

[0283] The average center line average surface roughness Ra and the average 10-point average surface roughness Rz in the example are measured in an area of ​​the test piece having a first horizontal length and a second vertical length, and the average values ​​measured by multiple lines (lines 1 to 40) in the lateral direction, the longitudinal direction, the first diagonal direction, and the second diagonal direction, respectively, are shown.

[0284] Table 1 shows individual values ​​and average values ​​of the average center line average surface roughness Ra and the average 10-point average surface roughness Rz measured by ten lines of the example in the lateral direction and the longitudinal direction, respectively.

[0285] Table 2 shows individual values ​​and average values ​​of the average center line average surface roughness Ra and the average 10-point average surface roughness Rz measured through ten lines of the embodiment in the first diagonal direction and the second diagonal direction, respectively.

[0286] |RD-TD| / TD*100(%) is a calculated value of the deviation ratio (%) between RD and TD.

[0287] [Table 1]

[0288]

[0289]

[0290] [Table 2]

[0291]

[0292]

[0293] The average center line average surface roughness Ra and the average 10-point average surface roughness Rz in the comparative example are measured in an area of ​​the test piece having a first horizontal length and a second vertical length, and the average values ​​measured by multiple lines (lines 1 to 40) in the lateral direction, the longitudinal direction, the first diagonal direction, and the second diagonal direction, respectively, are shown.

[0294] Table 3 shows individual values ​​and average values ​​of the average center line average surface roughness Ra and the average 10-point average surface roughness Rz measured by ten lines of the comparative example in the lateral direction and the longitudinal direction, respectively.

[0295] Table 4 shows individual values ​​and average values ​​of the average center line average surface roughness Ra and the average 10-point average surface roughness Rz measured through ten lines of the comparative example in the first diagonal direction and the second diagonal direction, respectively.

[0296] |RD-TD| / TD*100(%) is a calculated value of the deviation ratio (%) between RD and TD.

[0297] [Table 3]

[0298]

[0299]

[0300] [Table 4]

[0301]

[0302]

[0303] In the metal sheet according to the example, it was determined that the average center line average surface roughness Ra in the rolling direction RD and the transverse direction TD was 0.1 μm to 0.3 μm.

[0304] In the metal plate according to the example, it was determined that the average 10-point average surface roughness Rz in the rolling direction RD and the transverse direction TD was 0.5 μm to 2.0 μm. That is, in the example, it was determined that the metal plate had the same or similar range of roughness values ​​for the same roughness evaluation item regardless of the direction.

[0305] In this case, the length in the first horizontal direction and the length in the second vertical direction may correspond to each other or may be different from each other.

[0306] Specifically, after setting the roughness measurement device to 20 times magnification, an arbitrary point on the metal plate is selected, and the surface roughness can be measured in an area of ​​232 μm*309 μm.

[0307] The specific method of measuring the surface roughness of the example is to measure the surface roughness on any straight line in the TD direction and the RD direction in an area having a length in the first horizontal direction and a length in the second vertical direction, and the length of the straight line can be the same as the length in the first horizontal direction or the length in the second vertical direction. The example shows the values ​​of Ra and Rz measured based on any straight line in the longitudinal direction, the diagonal direction, and the lateral direction at any point of the metal test piece after surface treatment, and shows the average derived values ​​obtained by changing the position to measure Ra and Rz on 10 straight lines in the TD direction, 10 straight lines in the RD direction, 10 straight lines in the 45 degree direction, and 10 straight lines in the -45 degree direction.

[0308] The comparative example shows the values ​​of Ra and Rz measured based on arbitrary straight lines in the longitudinal direction, diagonal direction and lateral direction at any point of the metal test piece before surface treatment, and shows the average derived values ​​obtained by changing the position to measure Ra and Rz on 10 straight lines in the TD direction, 10 straight lines in the RD direction, 10 straight lines in the 45 degree direction and 10 straight lines in the -45 degree direction, respectively.

[0309] On the metal plate according to the comparative example, it was determined that the average center line average surface roughness Ra in the rolling direction RD was 0.0431 μm, and the average center line average surface roughness Ra in the transverse direction TD was 0.103 μm. In the metal plate according to the comparative example, it was determined that the average 10-point average surface roughness Rz in the rolling direction RD was 0.1862 μm, and the average 10-point average surface roughness Rz in the transverse direction TD was 0.4222 μm. That is, in the comparative example, it was determined that the average center line average surface roughness was different depending on the direction. In addition, in the comparative example, it was determined that the average 10-point average surface roughness was different depending on the direction.

[0310] In the case of the example, the total average center line average surface roughness measured in the area of ​​232μm*309μm is 0.14μm to 0.15μm, and the total average 10-point average surface roughness measured in the area of ​​232μm*309μm is 3.8μm to 4.5μm. On the other hand, in the comparative example, the total average center line average surface roughness measured in the area of ​​232μm*309μm is 0.06μm to 0.1μm, and the total average 10-point average surface roughness measured in the area of ​​232μm*309μm is 0.8μm to 1.5μm.

[0311] Therefore, it is considered that adhesion is improved as the surface roughness increases, but before obtaining the example, the etching shape was evaluated using a test piece having a total average center line average surface roughness of 0.05 μm to 0.5 μm measured in an area of ​​232 μm*309 μm and a total average 10-point average surface roughness of 1.0 μm to 3.0 μm measured in an area of ​​232 μm*309 μm, but the expected shape did not appear.

[0312] As a result of the inspection, the average surface roughness in the entire area of ​​232 μm*309 μm increased, but an undesirable etching shape occurred due to the deviation of the surface roughness in the longitudinal direction (rolling direction) and the lateral direction (transverse direction). Based on this, an example of the present invention can be obtained.

[0313] In addition, it can be seen that the value of the average center line average surface roughness Ra (RD) in the longitudinal direction of the non-deposition area or island-shaped portion of the deposition mask according to the present embodiment has a deviation of less than 50% relative to the average center line average surface roughness Ra (TD) in the lateral direction, and the value of the average 10-point average surface roughness Rz (RD) in the longitudinal direction has a deviation of less than 50% relative to the average 10-point average surface roughness Rz (TD) in the lateral direction. In detail, it can be seen that the value of the average center line average surface roughness Ra (RD) in the longitudinal direction of the non-deposition area or island-shaped portion of the deposition mask according to the present embodiment has a deviation of 30% or less relative to the average center line average surface roughness Ra (TD) in the lateral direction, and the value of the average 10-point average surface roughness Rz (RD) in the longitudinal direction has a deviation of 30% or less relative to the average 10-point average surface roughness Rz (TD) in the lateral direction. In more detail, it can be seen that the value of the average center line average surface roughness Ra (RD) in the longitudinal direction of the non-deposition area or island-shaped part of the deposition mask according to the present embodiment deviates from the value of the average center line average surface roughness Ra (TD) in the transverse direction by 15% or less, and the value of the average 10-point average surface roughness Rz (RD) in the longitudinal direction deviates from the value of the average 10-point average surface roughness Rz (TD) in the lateral direction by 15% or less.

[0314] On the other hand, in the test piece of the metal plate according to the comparative example, it can be seen that the value of the average center line average surface roughness Ra (RD) in the longitudinal direction deviates from the value of the average center line average surface roughness Ra (TD) in the lateral direction by more than 50%, and the value of the average 10-point average surface roughness Rz (RD) in the longitudinal direction deviates from the value of the average 10-point average surface roughness Rz (TD) in the lateral direction by more than 50%.

[0315] <Experimental Example 3: Measurement of Adhesion of Photoresist Layer in RD Direction and TD Direction>

[0316] Fig.19 is a graph showing the correlation between the surface roughness according to the direction of the metal plate and the adhesion of the photoresist layer according to an example. In the example, since the range of the roughness at the surface of the metal plate has a constant value regardless of the direction, the adhesion of the photoresist layer can be constant.

[0317] Fig. 22 is a graph showing the correlation between the surface roughness according to the direction of the metal plate and the adhesion of the photoresist layer according to the comparative example. In the comparative example, since the roughness is different from the surface of the metal plate according to the direction, the adhesion of the photoresist layer is not uniform. Therefore, the photoresist layer may be lifted or stripped.

[0318] Etched surfaces were formed to evaluate the etching characteristics of the metal plates of the above-described examples and comparative examples.

[0319] <Experimental Example 4: Shape of Etched Surface According to Example and Comparative Example>

[0320] It is a photograph showing the shape of the etched surface after the metal plates according to the example and the comparative example are prepared and etched for forming large surface holes. At this time, the large surface holes may have been formed by half etching.

[0321] Fig. 20 : is a photograph showing a half-etched shape of one surface of a metal plate to evaluate the shape of an island portion IS of a deposition mask manufactured by a method according to an example. In a deposition mask formed based on the manufacturing method of the example, the shapes of the through-hole and the island portion may be uniform.

[0322] Fig.23 : is a photograph showing a half-etched shape of one surface of a metal plate to evaluate the shape of an island portion IS of a deposition mask manufactured using a metal plate of a comparative example. In a deposition mask formed based on the manufacturing method of the comparative example, the boundary between the island portion and the through hole may not be clear. Therefore, it may be difficult to manufacture a deposition mask having a through hole of uniform size.

[0323] Meanwhile, a deposition mask for realizing a high-resolution pattern as described above requires a metal plate of 30 μm or less, and as the PPI value to be realized increases, a thinner metal plate and a more precise through hole are required.

[0324] Generally, the metal plate is manufactured through a rolling process and may have a rectangular shape including a major axis and a minor axis. The metal plate may include residual stress due to the rolling process, and as the force applied during rolling increases, the residual stress included in the metal plate increases.

[0325] Due to the residual stress, a warping phenomenon (wave deformation) may occur in the metal plate, and as the thickness of the metal plate becomes thinner to achieve high resolution, the residual stress of the metal plate increases.

[0326] Due to the residual stress, the size and position of the through hole formed on the metal plate may be uneven. Therefore, when the metal plate is used to manufacture a deposition mask, poor deposition may occur.

[0327] In addition, when a deposition mask is manufactured using a metal plate, misalignment may occur due to a warping phenomenon of the deposition mask. Specifically, the deposition mask may be placed in a deposition device when an organic substance is deposited. At this time, due to the warping phenomenon of the deposition mask, adhesion to the substrate may be reduced. Therefore, the organic substance may not be uniformly deposited on the substrate, and adjacent organic substances may be mixed with each other to cause poor deposition.

[0328] In order to prevent this, the residual stress of the base metal plate as the base material of the metal plate can be measured in advance. In detail, the sample metal plate can be manufactured using the base metal plate to measure the residual stress, and the residual stress characteristics of the base metal plate can be grasped.

[0329] Hereinafter, a metal plate and a method of measuring residual stress of the metal plate according to an embodiment will be described.

[0330] Fig.24 is a view showing that a metal plate as a raw material of a deposition mask has been wound.

[0331] Reference Fig.24, the metal plate 10 according to the embodiment may include a metal material. For example, the metal plate 10 may include nickel (Ni). In detail, the metal plate 10 may include iron (Fe) and nickel (Ni). In more detail, the metal plate 10 may include iron (Fe), nickel (Ni), oxygen (O) and chromium (Cr). In addition, the metal plate 10 may also include a small amount of carbon (C), silicon (Si), sulfur (S), phosphorus (P), manganese (Mn), titanium (Ti), cobalt (Co), copper (Cu), silver (Ag), vanadium (V), niobium (Nb), indium (In) and antimony (Sb) at least one element. Invar is an alloy containing iron and nickel, and is a low thermal expansion alloy with a thermal expansion coefficient close to zero. That is, since the thermal expansion coefficient of Invar is very small, Invar can be used for precision parts, such as masks and precision equipment. Therefore, the deposition mask manufactured using the metal plate 10 can have improved reliability, thereby preventing deformation and increasing life.

[0332] The metal plate 10 may contain about 60% to about 65% by weight of iron, and may contain about 35% to about 40% by weight of nickel. In detail, the metal plate 10 may contain about 63.5% to about 64.5% by weight of iron, and may contain about 35.5% to about 36.5% by weight of nickel. In addition, the metal plate 10 may also contain about 1% by weight or less of carbon (C), silicon (Si), sulfur (S), phosphorus (P), manganese (Mn), titanium (Ti), cobalt (Co), copper (Cu), silver (Ag), vanadium (V), niobium (Nb), indium (In), antimony (Sb) in at least one element. The composition, content and weight % of the metal plate 10 may be determined by the following method: by selecting a specific area a*b on the plane of the metal plate 10 to detect the weight % of each component, sampling a test piece (a*b*t) corresponding to the thickness t of the metal plate 10, and dissolving the test piece in a strong acid, etc. However, the embodiment is not limited thereto, and the content may be determined by various methods.

[0333] The metal plate 10 may be manufactured by a cold rolling method. For example, the metal plate 10 may be formed by melting, forging, hot rolling, normalizing, primary cold rolling, primary annealing, secondary cold rolling, and secondary annealing processes, and may have a thickness of about 30 μm or less through the above processes. Alternatively, after the above processes, the thickness of the metal plate 10 may be about 30 μm or less through an additional thickness reduction process.

[0334] The metal plate 10 may be Fig.24 For example, the metal plate 10 may be manufactured by a cold rolling method, and the manufactured metal plate 10 may be wound using a winding roller or the like. In detail, the manufacturing method of the deposition mask 100 may be performed by a roll-to-roll process, and the metal plate 10 may be continuously supplied using the wound metal plate 10.

[0335] The metal plate 10 may have a quadrilateral shape. For example, the metal plate 10 may have a rectangular shape including a major axis and a minor axis. In detail, the metal plate 10 may have a first direction as a rolling direction RD, and may have a second direction as a transverse direction TD intersecting the rolling direction. The first direction may correspond to the major axis direction of the metal plate, and the second direction may correspond to the minor axis direction of the metal plate.

[0336] When the metal plate 10 is manufactured through a rolling process, a warping phenomenon may occur in the metal plate 10. Specifically, the metal plate 10 may include internal stress during the rolling process, and a warping phenomenon may occur in the metal plate 10 due to the internal stress, ie, residual stress.

[0337] The above-mentioned residual stress may be an important factor when manufacturing the deposition mask 100 using the metal plate 10. Therefore, it may be desirable to measure the residual stress of the metal plate 10 before manufacturing the deposition mask 100. In detail, a defect such as a warpage phenomenon may occur in the metal plate 10 due to the residual stress, and a defect may occur in the manufactured deposition mask 100 due to the defect. Therefore, it may be desirable to measure the residual stress of the metal plate 10 in advance.

[0338] Fig.25 is a diagram showing a method of measuring residual stress of a metal plate according to a comparative example. Fig.25 Describe comparative examples.

[0339] Reference Fig.25 , a sample metal plate 15 extracted from a metal plate may be prepared to measure the residual stress of the metal plate. The sample metal plate 15 may have a major axis and a minor axis, and the sample metal plate 15 may be manufactured by etching a region other than a region within a predetermined distance from both ends in the major axis direction. The etching is half-etching one surface of the sample metal plate 15, and the half-etching may be performed until the thickness of one surface of the sample metal plate 15 becomes approximately 30% to 70% of the total thickness of the sample metal plate 15.

[0340] Subsequently, the sample metal plate 15 can be placed on a horizontal workbench to measure the residual stress. In this case, the sample metal plate 15 placed on the horizontal workbench can be as follows Fig.25 As shown in (b), it is placed facing the upper surface of the horizontal workbench.

[0341] As described above, in the sample metal plate 15 placed on the horizontal workbench, a warping phenomenon (wave deformation) may occur due to internal stress, and the residual stress can be calculated based on the data obtained by measuring the warping. However, when the thickness of the metal plate is thin, the residual stress may not be accurately measured by the above method. For example, a deposition mask for realizing a high-resolution pattern of 400PPI or more is manufactured by a metal plate having a thickness of about 30μm or less, and the side surface of the metal plate having the thickness as described above may not be placed parallel to the horizontal workbench. That is, when the thickness of the metal plate is thin, it may be difficult to stand the metal plate upright on the horizontal workbench due to its thickness, and therefore the residual stress may not be measured.

[0342] In other words, conventionally, a sample metal plate is manufactured by half-etching the regions other than partial regions of both ends of one surface of the sample metal plate. Subsequently, the sample metal plate is placed on a flat horizontal workbench, and the warpage of the sample metal plate is measured to measure its residual stress. However, in such a sample metal plate, both end regions in the longitudinal direction remain unetched. In addition, due to the above-mentioned reasons, when the sample metal plate is placed on a flat horizontal workbench, all four vertices are not etched and therefore are not lifted, making it difficult to measure the residual stress in a horizontal state.

[0343] In addition, in a metal plate for realizing a high-resolution pattern, it is difficult for the metal plate to stand on a horizontal workbench because of its very thin thickness. In detail, when the thickness of the metal plate is thin, the sample metal plate to be manufactured also has a thin thickness, and thus it is difficult to make the side surface of the sample metal plate stand facing the upper surface of the horizontal workbench. Therefore, there is a problem that it is difficult to measure the residual stress of the thin metal plate, and in a deposition mask manufactured using the metal plate, the uniformity of the through hole to be formed and the adhesion to the substrate are reduced due to the internal stress, and problems such as reduced deposition efficiency and poor deposition occur.

[0344] In contrast, in this embodiment, the residual stress can be measured regardless of the thickness of the metal plate 10 .

[0345] Fig.26 is a view for describing a sample metal plate manufactured using the metal plate according to the example. Fig. 27 is a view for describing a method of measuring residual stress according to an example. Fig.26 and Fig. 27 , the residual stress characteristics and measurement method of the metal plate according to the example will be described. Fig.26 The metal plate 10 may be a metal plate for manufacturing a deposition mask 100 for achieving a high resolution of 400 PPI or more, and may have a thickness of about 30 μm or less.

[0346] The metal plate 10 can be formed by rolling a base metal plate as a base material. The base metal plate may include a metal material. The base metal plate may include about 60% by weight to about 65% by weight of iron, and may include about 35% by weight to about 40% by weight of nickel. In detail, the base metal plate may include about 63.5% by weight to about 64.5% by weight of iron, and may include about 35.5% by weight to about 36.5% by weight of nickel. In addition, the base metal plate may also include at least one of the following elements with a content of about 1% by weight or less: carbon (C), silicon (Si), sulfur (S), phosphorus (P), manganese (Mn), titanium (Ti), cobalt (Co), copper (Cu), silver (Ag), vanadium (V), niobium (Nb), indium (In) and antimony (Sb). That is, the base metal plate and the metal plate 10 may include the same material.

[0347] Subsequently, a step of forming a sample metal plate 15 using the metal plate 10 may be performed. The sample metal plate 15 may be used to measure the residual stress of the metal plate 10. The sample metal plate 15 may be a sample collected at an arbitrary point on the metal plate 10. In this case, the sample metal plate 15 may be at least one sample collected at an arbitrary point on the metal plate 10, and the residual stress may be measured using the at least one sample.

[0348] The step of forming the sample metal plate 15 may include the step of extracting the sample metal plate 15 from the metal plate 10 and the step of etching the sample metal plate 15 .

[0349] The step of extracting the sample metal plate 15 is a step of extracting a sample metal plate in a strip shape in which the width is greater than the height at any point on the metal plate 10, and the step of extracting the sample metal plate 15 may be a step of extracting a first sample metal plate extracted to have a width in a first direction and extracting a second sample metal plate extracted to have a width in a second direction. For example, the sample metal plate 15 may include a first sample metal plate extracted in a first direction as a rolling direction RD of the metal plate 10 and a second sample metal plate extracted in a second direction as a transverse direction TD of the metal plate 10.

[0350] The sample metal plate 15 may be a sample having a size of about 200 mm*30 mm (width*length). In detail, the length of the first sample metal plate in the first direction may be about 200 mm, and the length in the second direction may be 30 mm. That is, the long axis of the first sample metal plate may extend along the rolling direction RD. In addition, the length of the second sample metal plate in the first direction may be about 30 mm, and the length in the second direction may be about 200 mm. That is, the long axis of the second sample metal plate may extend along the transverse direction TD.

[0351] Subsequently, a step of etching the sample metal plate 15 may be performed. In detail, the step of etching the sample metal plate 15 may be a step of half-etching one surface of the sample metal plate 15. For example, the etching step may be a step of half-etching one surface of each of the first sample metal plate and the second sample metal plate.

[0352] The step of etching the sample metal plate 15 may be a step in which a region of about 150 mm*30 mm (width*length), which is a region exceeding 50 mm, is half-etched while a region from one end to 50 mm on a long axis is retained, the long axis being a horizontal direction of the sample metal plate 15. In addition, the step of etching the sample metal plate 15 may be a half-etching step so that the thickness of the region of 150 mm*30 mm becomes about 30% to about 70% of the thickness of the metal plate 10.

[0353] Next, a step of measuring the residual stress of the sample metal plate may be performed. In detail, the step of measuring the residual stress may be a step of measuring the residual stress of the half-etched first sample metal plate and the second sample metal plate, respectively.

[0354] Reference Fig. 27 The step of measuring the residual stress of the sample metal plate 15 may include placing the sample metal plate 15 on a horizontal workbench. For example, the placing step may be a step of placing at least one of the first sample metal plate and the second sample metal plate subjected to half etching on a horizontal workbench.

[0355] The sample metal plate 15 may include one surface and another surface. In detail, the sample metal plate 15 may include one surface on which half etching is performed and another surface on which half etching is not performed. The step of placing the sample metal plate 15 may be a step in which the other surface of the sample metal plate 15 is arranged to face the upper surface of the horizontal workbench.

[0356] Subsequently, the first residual stress rate and the second residual stress rate may be measured. The first residual stress rate may be the residual stress rate of the first sample metal plate, and the second residual stress rate may be the residual stress rate of the second sample metal plate. In detail, the first residual stress rate may be the residual stress rate of the first sample metal plate whose dimension in the first direction is the horizontal direction is about 200mm*30mm (width*length), and the second residual stress rate is the residual stress rate of the second sample metal plate whose dimension in the second direction is the horizontal direction is about 200mm*30mm (width*length). The sample metal plate 15 placed on the horizontal workbench may be warped due to the internal stress caused by the rolling process. In detail, one end of at least one of the etching areas of the sample metal plate 15 may be warped in a direction away from the upper surface of the horizontal workbench.

[0357] More specifically, at least one end of one surface of the half-etched sample metal plate 15 may be warped toward the center of the sample metal plate 15 while being separated from the upper surface of the horizontal worktable. That is, one end of the sample metal plate 15 may be warped in a direction away from the horizontal worktable due to internal stress, and the one end may be warped into a rolled shape depending on the magnitude of the internal stress.

[0358] That is, the residual stress rate of the sample metal plate 15 may be calculated by measuring the height of the half-etched region of the sample metal plate 15 spaced apart from the upper surface of the horizontal stage, and may satisfy the following [Equation].

[0359] [Equation]

[0360] Residual stress ratio = H / L

[0361] (H: Maximum height of the etching area of ​​the sample metal plate lifted and warped from the upper surface of the horizontal table, L: Length in the horizontal direction where the etching area of ​​the sample metal plate is formed)

[0362] The residual stress rate of the sample metal plate 15 can be measured by the above method. At this time, the residual stress rate may be a value obtained by using a plurality of sample metal plates 15. For example, the first residual stress rate of the first sample metal plate may be a value obtained from the average value of the plurality of first sample metal plates measured by the above method. In addition, the second residual stress rate of the second sample metal plate may be a value obtained from the average value of the plurality of second sample metal plates measured by the above method. That is, the residual stress rate may be an average residual stress rate.

[0363] The residual stress rate of the sample metal plate 15 may be about 0.06 or less. In detail, the residual stress rate of the sample metal plate 15 may be about 0.0333 (5 / 150) or less. For example, the first residual stress rate of the first sample metal plate and the second residual stress rate of the second sample metal plate may be about 0.06 or less. Preferably, the first residual stress rate of the first sample metal plate and the second residual stress rate of the second sample metal plate may be about 0.0333 (5 / 150) or less.

[0364] When the residual stress rate of the sample metal plate 15 exceeds about 0.06, a warping phenomenon (wave deformation) may occur in the metal plate 10, and a process defect may occur during the manufacture of the deposition mask 100 using the metal plate. In addition, when an organic material is deposited by using the deposition mask 100 manufactured using the metal plate 10, poor deposition may occur. In detail, due to the warping phenomenon, the position, shape, etc. of the through hole TH formed in the deposition mask 100 may be uneven, so the deposition efficiency may be reduced and poor deposition may occur. Therefore, it is preferred that the residual stress rate of the metal plate 10 satisfies the above range, and it is more preferred that the residual stress rate is close to zero. That is, when the residual stress rate of the metal plate 10 exceeds the above range, the metal plate 10 may not be suitable as a metal plate for manufacturing the deposition mask 100.

[0365] The residual stress rates of the first and second sample metal plates may be different from each other. For example, the first residual stress rate of the first sample metal plate extending in the rolling direction RD may be smaller than the second residual stress rate of the second sample metal plate extending in the transverse direction TD.

[0366] In this case, the first sample metal plate may be warped in the second direction, and the second sample metal plate may be warped in the second direction. In detail, two corners extending in the long axis direction in the first sample metal plate may tend to be warped and curled toward the central portion of the first sample metal plate due to internal stress. In addition, one of the two corners extending in the short axis direction in the second sample metal plate, which is located in the etching region, may tend to be warped and curled toward the central portion of the second sample metal plate due to internal pressure.

[0367] The difference between the first residual stress rate of the first sample metal plate and the second residual stress rate of the second sample metal plate may be about 0.0333 (5 / 150). In more detail, the difference between the first residual stress rate of the first sample metal plate and the second residual stress rate of the second sample metal plate may be about 0.02 (3 / 150). When the difference in residual stress rate exceeds about 0.0333 (5 / 150), the warping phenomenon may be concentrated in the first direction of the metal plate 10 as the rolling direction RD or in the second direction as the transverse direction TD, and when the metal plate 10 is used to manufacture the deposition mask 100, process defects may occur. Therefore, it is preferred that the difference between the first residual stress rate of the first sample metal plate and the second residual stress rate of the second sample metal plate is within the above range, and it is more preferred that the difference in residual stress rate is close to zero and is small.

[0368] However, the example is not limited thereto, and within the above-mentioned range of residual stress rates, the first residual stress rate of the first sample metal plate may be greater than the second residual stress rate of the second sample metal plate. In addition, within the above-mentioned range of difference in residual stress rates, the first residual stress rate of the first sample metal plate may be greater than the second residual stress rate of the second sample metal plate. In this case, the first sample metal plate may be warped in the first direction, and the second sample metal plate may be warped in the first direction. In detail, one of the two corners extending in the short axis direction in the first sample metal plate that is located in the etching area may tend to warp and curl toward the central portion of the first sample metal plate. In addition, the two corners extending in the long axis direction in the second sample metal plate may tend to warp and curl toward the central portion of the second sample metal plate.

[0369] The deposition mask 100 may be manufactured by supplying the metal plate 10 in a roll-to-roll method. In this case, the metal plate 10 may be supplied in the long-axis direction of the metal plate 10, and may be supplied while applying a predetermined amount of tension in the long-axis direction of the metal plate by the roll-to-roll method. That is, the metal plate 10 may be supplied while applying tension in the rolling direction RD of the metal plate 10.

[0370] In addition, during the manufacturing process of the deposition mask 100 for forming a through hole or the like on the metal plate 10, a separate tension may be further applied to the metal plate 10 in the long axis direction of the metal plate 10. That is, a separate tensile force may be further applied in the rolling direction RD of the metal plate 10.

[0371] Therefore, the metal plate 10 can be pulled in the rolling direction RD. Therefore, it is preferable that the residual stress rate in the rolling direction RD of the metal plate 10 is smaller than the residual stress rate in the transverse direction TD. In detail, it is preferable that the first residual stress rate of the metal plate 10 is smaller than the second residual stress rate thereof. That is, it is preferable that the residual stress rate of the first sample metal plate extracted from the metal plate 10 along the first direction as the rolling direction RD is smaller than the residual stress rate of the second sample metal plate extracted along the second direction as the transverse direction TD.

[0372] As an example, when the first residual stress rate of the metal plate 10 is greater than the second residual stress rate, a lot of warping may occur in the first direction of the metal plate 10, and thus a lot of deformation may occur. Therefore, when the metal plate 10 is supplied by the roll-to-roll method, the length of the supplied metal plate 10 may be uneven due to the deformation. In addition, in the process of forming a through hole or the like on the metal plate 10, the uniformity of the position and shape of the formed through hole may be reduced due to the deformation caused by the warping phenomenon.

[0373] Therefore, it may be preferable that the first residual stress rate of the metal plate 10 is lower than the second residual stress rate of the metal plate 10 than that the first residual stress rate of the metal plate 10 is higher than the second residual stress rate of the metal plate 10. Therefore, even if the metal plate 10 is pulled in the rolling direction RD during the manufacturing process of the deposition mask 100, a uniform and precise pattern can be formed.

[0374] Hereinafter, the operation and effects of the present invention will be described in more detail with reference to Examples and Comparative Examples.

[0375] Example 1

[0376] A sample metal plate is extracted from a metal plate having a thickness of about 25 μm and containing about 63.5 wt % to about 64.5 wt % of iron and about 35.5 wt % to about 36.5 wt % of nickel.

[0377] The size of the sample metal plate was 200 mm*30 mm (width*length), and a first sample metal plate was extracted in the rolling direction RD of the metal plate, and a second sample metal plate was extracted in the transverse direction TD.

[0378] The length of the first sample metal plate in the horizontal direction may be 200 mm, and the horizontal direction of the first sample metal plate may be the rolling direction RD. In addition, the length of the second sample metal plate in the horizontal direction may be 200 mm, and the horizontal direction of the second sample metal plate may be the transverse direction TD.

[0379] Subsequently, an area of ​​about 150 mm*30 mm (width*length), which is an area exceeding 50 mm, is half-etched while an area to 50 mm from one end in the horizontal direction of the sample metal plate is retained. Half etching is performed until the thickness of the etched area becomes about 30% to about 70% of the thickness of the area not subjected to etching.

[0380] The sample metal plate after the half etching process is arranged on a horizontal workbench. In this case, the other surface opposite to the half-etched surface of the sample metal plate is arranged to face the upper surface of the horizontal workbench.

[0381] Three of each of the first sample metal plate and the second sample metal plate were manufactured in the above method, and the residual stress rate was calculated based on the average value in each direction by measuring the maximum height at which the end of each sample metal plate set on the horizontal workbench was spaced apart from the horizontal workbench.

[0382] Example 2

[0383] Except that the sample metal plates were extracted from a metal plate having a thickness of about 25 μm and containing about 63.5 wt % to about 64.5 wt % iron and about 35.5 wt % to about 36.5 wt % nickel, three sample metal plates were manufactured in the same manner as Example 1 for each direction in the rolling direction RD and the transverse direction TD.

[0384] Subsequently, the sample metal plates were arranged on a horizontal table, and the average value in each direction was obtained by measuring the maximum height at which the end of each sample metal plate arranged on the horizontal table was spaced apart from the horizontal table, and the residual stress rate was calculated based on the average value.

[0385] Example 3

[0386] Except that the sample metal plates were extracted from a metal plate having a thickness of about 30 μm and containing about 63.5 wt % to about 64.5 wt % iron and about 35.5 wt % to about 36.5 wt % nickel, three sample metal plates were manufactured in the same manner as Example 1 for each direction in the rolling direction RD and the transverse direction TD.

[0387] Subsequently, the sample metal plates were arranged on a horizontal table, and an average value in each direction was obtained by measuring a maximum height at which an end of each sample metal plate arranged on the horizontal table was spaced apart from the horizontal table, and the residual stress rate was calculated based on the average value.

[0388] Example 4

[0389] Except that the sample metal plates were extracted from a metal plate having a thickness of about 20 μm and containing about 63.5 wt % to about 64.5 wt % of iron and about 35.5 wt % to about 36.5 wt % of nickel, three sample metal plates were manufactured in the same manner as Example 1 for each direction in the rolling direction RD and the transverse direction TD.

[0390] Subsequently, the sample metal plates were arranged on a horizontal table, and an average value in each direction was obtained by measuring a maximum height at which an end of each sample metal plate arranged on the horizontal table was spaced apart from the horizontal table, and the residual stress rate was calculated based on the average value.

[0391] Comparative Example 1

[0392] Except that the sample metal plates were extracted from a metal plate having a thickness of about 30 μm and containing about 63.5 wt % to about 64.5 wt % of iron and about 35.5 wt % to about 36.5 wt % of nickel, three sample metal plates were manufactured in the same manner as Example 1 for each direction in the rolling direction RD and the transverse direction TD.

[0393] Subsequently, the sample metal plates were arranged on a horizontal table, and an average value in each direction was obtained by measuring a maximum height at which an end of each sample metal plate arranged on the horizontal table was spaced apart from the horizontal table, and the residual stress rate was calculated based on the average value.

[0394] Comparative Example 2

[0395] Except that the sample metal plates were extracted from a metal plate having a thickness of about 25 μm and containing about 63.5 wt % to about 64.5 wt % iron and about 35.5 wt % to about 36.5 wt % nickel, three sample metal plates were manufactured in the same manner as Example 1 for each direction in the rolling direction RD and the transverse direction TD.

[0396] Subsequently, the sample metal plates were arranged on a horizontal table, and an average value in each direction was obtained by measuring a maximum height at which an end of each sample metal plate arranged on the horizontal table was spaced apart from the horizontal table, and the residual stress rate was calculated based on the average value.

[0397]

Table 5

[0398]

[0399]

[0400] Referring to Table 5, it can be seen that the residual stress rate of a thin metal plate can be measured. In detail, it can be seen that the residual stress rate of a metal plate having a thickness of about 30 μm or less can be measured, and the residual stress rate of a metal plate having a thickness of about 20 μm can be measured.

[0401] In addition, referring to Table 5, in the residual stress rates of the sample metal plates according to the examples and the comparative examples, it can be seen that the residual stress rate of the first sample metal plate extending in the rolling direction RD is less than the residual stress rate of the second sample metal plate extending in the transverse direction TD. In addition, it can be seen that the residual stress rate of the sample metal plate according to the example is 0.06 or less. In detail, it can be seen that the residual stress rate of each of the first sample metal plate and the second sample metal plate according to the example is 0.06 or less. That is, the metal plate according to the example can have a low residual stress rate, thereby minimizing the warping phenomenon. When a deposition mask is manufactured using a metal plate, the position and shape of the through hole can be accurately formed on the metal plate.

[0402] On the other hand, in the case of Comparative Example 1, the residual stress rate of the first sample metal plate extending in the rolling direction RD is 0.06 or less, while the residual stress rate of the second sample metal plate extending in the transverse direction TD exceeds 0.06. Therefore, the sample metal plate of Comparative Example 1 is prone to warping in the transverse direction TD. In the case of Comparative Example 2, the residual stress rate of the first sample metal plate extending in the rolling direction RD exceeds 0.06, and since the second sample metal plate extending in the transverse direction TD is warped and curled in the transverse direction TD, it cannot be measured. That is, in the metal plate according to the comparative example, the residual stress rate in the rolling direction RD and the residual stress rate in the transverse direction TD are both large. In particular, since the residual stress rate in the transverse direction TD is very large, the metal plate of the comparative example tends to warp in the transverse direction TD. Therefore, when a deposition mask is manufactured using the metal plate of the comparative example, the position and shape of the through hole formed on the metal plate may be uneven.

[0403] In an example, the residual stress of the metal plate 10 manufactured in a thin manner by a rolling process can be effectively measured. In detail, the residual stress of the metal plate 10 having a thickness of about 30 μm or less can be measured. In more detail, the residual stress can be measured without being affected by the thickness of the metal plate 10.

[0404] In addition, the metal plate 10 measured by the above method may have a residual stress rate of about 0.06 or less. In detail, the residual stress rate in the rolling direction RD and the residual stress rate in the transverse direction TD of the metal plate may be about 0.06 or less. Therefore, in the example, the metal plate 10 may be used to manufacture a deposition mask 100 having a more precise pattern.

[0405] Fig.28 and Fig.29 is a view illustrating a deposition pattern formed through a deposition mask according to an embodiment.

[0406] Reference Fig.28, in the deposition mask 100 according to the embodiment, the height H1 between one surface of the deposition mask 100 in which the small surface holes V1 are formed and the connected portion may be about 3.5 μm or less. For example, the height H1 may be about 0.1 μm to about 3.4 μm. For example, the height H1 may be about 0.5 μm to about 3.2 μm. For example, the height H1 may be about 1 μm to about 3 μm.

[0407] Therefore, the distance between one surface of the deposition mask 100 and the substrate on which the deposition pattern is arranged can be shorter, and thus the deposition failure due to the shadow effect can be reduced. For example, by using the deposition mask 100 according to the embodiment, the failure of depositing different deposition materials in the area between two adjacent patterns when forming R, G, and B patterns can be prevented. Specifically, as Fig.29 As shown, when the above patterns are formed in the order of R, G, and B from the left, the R pattern and the G pattern may be prevented from being deposited in the region between the R pattern and the G pattern by a shadow effect.

[0408] In addition, the deposition mask 100 according to the embodiment may be manufactured using a metal plate having a residual stress rate of 0.06 or less. In detail, the deposition mask 100 may be manufactured using a metal plate having a residual stress rate in the rolling direction RD and a residual stress rate in the transverse direction TD of 0.06 or less. Therefore, the occurrence of a warping phenomenon in the metal plate 10 may be minimized when manufacturing the deposition mask 100. Therefore, the small surface holes V1, the large surface holes V2, and the through holes TH may be uniformly and accurately formed on the metal plate 10.

[0409] In addition, since the deposition mask 100 according to the embodiment is manufactured by using a metal plate in which residual stress is measured in advance, a high-resolution pattern with 400PPI or more, and further 800PPI or more, can be accurately implemented, and when an organic material is deposited on a substrate 300 using the deposition mask 100, the deposition efficiency of the organic material can be improved.

[0410] At the same time, the inclination angle of the large surface hole formed in the deposition mask affects the height or thickness of the central portion of the rib. That is, when the inclination angle of the large surface hole is less than a predetermined range, the thickness of the central portion of the rib connected between the through holes becomes thinner. In addition, when the thickness of the central portion of the rib becomes thinner, the rigidity of the deposition mask decreases, resulting in length deformation of the deposition mask, such as tensile deformation, total spacing deformation, and sagging. In addition, with the length deformation, the uniformity of the shape of the mask pattern and the position of the through hole may be reduced. In addition, when the diameter of the through hole is uneven, the pattern deposition efficiency may be reduced, resulting in poor deposition.

[0411] In addition, when the inclination angle of the large surface hole formed in the deposition mask is greater than a predetermined range, there is a problem that a portion of the organic material does not pass through the through hole when the organic material is deposited on the substrate. In detail, in an area that does not overlap with the organic material deposition container or a through hole positioned in a direction perpendicular to the moving direction of the organic material deposition container, the moving distance of the organic material is longer, and thus there is a problem that a portion of the organic material cannot pass through the through hole and is deposited on an island portion formed between adjacent through holes or on the inner surface of the large surface hole of the through hole.

[0412] Therefore, in this embodiment, a deposition mask capable of uniformly forming a high-resolution or ultra-high-resolution (UHD-level) pattern without deposition failure and capable of preventing various length deformations may be provided.

[0413] Fig.30 is a view showing a plan view of an effective portion of a deposition mask 100A according to another embodiment of the present invention.

[0414] like Fig.30 As shown, the large surface hole V2 may include multiple etched surfaces. Figure 6a In the embodiment, it has been described that the large surface hole V2 includes the second etching surface ES2. At this time, Figure 6a The large surface hole V2 etching surface in the embodiment also basically includes a plurality of etching surfaces, but the plurality of etching surfaces are formed under the same conditions. On the other hand, Fig.30 The deposition mask 100A in is formed under the condition in which, in one large-surface hole V2, the etching surface in the vertical direction and the etching surface in the horizontal direction are different from each other.

[0415] That is to say, Figure 6a In the deposition mask 100, the large surface holes V2 are formed while having the second etched surface ES2 under generally the same conditions, but Fig.30 In the deposition mask 100A in FIG. 1 , the large surface hole V2 may be formed while having the second etch surface ES2 and the third etch surface ES3 under different conditions.

[0416] Here, Fig.30 The large surface holes V2 and the small surface holes V1 of the deposition mask in the embodiment of the present invention are arranged to be aligned with each other. In other words, the center of the small surface hole V1 formed in all regions of the deposition mask and the center of the large surface hole V2 are aligned. For example, the center of the small surface hole V1 and the center of the large surface hole V2 formed in all regions of the deposition mask may be positioned on the same vertical line.

[0417] Meanwhile, the etched surface may also be referred to as the inner surface of the large surface hole V2.

[0418] like Fig.30 As shown, as in another embodiment of the present disclosure, the large surface hole V2 may include a second etched surface ES2 and a third etched surface ES3. The large surface hole is formed by connecting a plurality of second etched surfaces ES2 with a plurality of third etched surfaces ES3. Preferably, the plurality of second etched surfaces ES2 and the plurality of third etched surfaces ES3 form a large surface hole.

[0419] The second etched surface ES2 of the large surface hole is an inner surface positioned in the horizontal direction relative to the center of the large surface hole of the through hole. Preferably, the second etched surface ES2 is an inner surface positioned at both sides in the longitudinal direction relative to the center of the large surface hole. The second etched surface ES2 is an inner surface positioned at both sides of the tensile direction relative to the center of the large surface hole. The second etched surface ES2 is an inner surface positioned at both sides of the X-axis direction relative to the center of the large surface hole. Therefore, the second etched surface ES2 includes a first secondary second etched surface ES2-1 positioned in the first longitudinal direction relative to the center of the large surface hole of the through hole and a second secondary second etched surface ES2-2 in the second longitudinal direction opposite to the first longitudinal direction. At the same time, in the other surface of the deposition mask, the cross-sectional inclination angle of the first secondary second etched surface ES2-1 can correspond to the cross-sectional inclination angle of the second secondary second etched surface ES2-2. That is, the cross-sectional inclination angle θ of the first secondary second etched surface ES2-1 and the cross-sectional inclination angle θ of the second secondary second etched surface ES2-2 can be the same.

[0420] The third etched surface ES3 of the large surface hole is an inner surface positioned in the vertical direction relative to the center of the large surface hole of the through hole. Preferably, the third etched surface ES3 is an inner surface positioned at both sides in the lateral direction relative to the center of the large surface hole. The third etched surface ES3 is an inner surface positioned at both sides in the direction perpendicular to the stretching direction relative to the center of the large surface hole. The third etched surface ES3 is an inner surface positioned at both sides in the Y-axis direction relative to the center of the large surface hole. Therefore, the third etched surface ES3 includes a first secondary third etched surface ES3-1 positioned in the first lateral direction relative to the center of the large surface hole of the through hole and a second secondary third etched surface ES3-2 positioned in the second lateral direction opposite to the first lateral direction. At the same time, the cross-sectional inclination angle of the first secondary third etched surface ES3-1 may correspond to the cross-sectional inclination angle of the second secondary third etched surface ES3-2. That is, the inclination angle θ of the first secondary third etched surface ES3-1 and the inclination angle θ of the second secondary third etched surface ES3-2 may be the same.

[0421] At the same time, the cross-sectional inclination angle θ of the second etched surface ES2 may be different from the cross-sectional inclination angle θ of the third etched surface ES3. That is, the cross-sectional inclination angle θ of the second etched surface ES2 may be smaller than the cross-sectional inclination angle θ of the third etched surface ES3. That is, in the large surface hole of the through hole, the cross-sectional inclination angle θ of the etched surface in the lateral direction intersecting the longitudinal direction may be greater than the cross-sectional inclination angle θ of the etched surface in the longitudinal direction.

[0422] The second etched surface ES2 and the third etched surface ES3 may be surfaces formed by etching factors during the etching process. The second etched surface ES2 and the third etched surface ES3 may be inner surfaces extending from the through hole TH to the other surface 102 of the deposition mask 100. For example, the second etched surface ES2 and the third etched surface ES3 may extend from the end of the through hole TH toward the adjacent through hole TH, and may extend toward the island portion IS. In addition, the second etched surface ES2 and the third etched surface ES3 may extend in the direction of the non-effective portion UA. That is, the second etched surface ES2 and the third etched surface ES3 may extend in the direction along which the non-etched surface is formed in the other surface 102 of the deposition mask 100.

[0423] The ribs RB1 and RB2 may be positioned between the through holes TH. Fig.30 One second rib RB2 may be formed between the first through hole TH1 and the second through hole TH2 adjacent to each other in the horizontal direction. In addition, another first rib RB1 may be formed between the first through hole TH1 and the third through hole TH3 adjacent to each other in the vertical direction.

[0424] The first rib RB1 is arranged to extend in the longitudinal direction on the deposition mask 100. The first rib RB1 is positioned in the longitudinal direction between a plurality of through holes arranged in the lateral direction on the deposition mask 100. The first rib RB1 is connected between a plurality of island portions IS arranged in the longitudinal direction on the deposition mask 100.

[0425] The second rib RB2 is disposed to extend in the lateral direction on the deposition mask 100. The second rib RB2 is formed in the lateral direction between a plurality of through holes arranged in the longitudinal direction on the deposition mask 100. The second rib RB2 is connected between a plurality of island portions IS arranged in the lateral direction on the deposition mask 100.

[0426] That is, the ribs RB1 and RB2 may be positioned between the through holes TH adjacent to each other. In detail, the ribs RB1 and RB2 may be positioned between the large surface holes V2 adjacent to each other. In more detail, the second rib RB2 may be positioned in a region where the respective second etched surfaces ES2 of the large surface holes V2 adjacent to each other are connected to each other. In more detail, the first rib RB1 may be positioned in a region where the respective third etched surfaces ES3 of the large surface holes V2 adjacent to each other are connected to each other. That is, the ribs RB1 and RB2 may be regions where the boundaries of the large surface holes V2 adjacent to each other are connected.

[0427] The central portion of the first rib RB1 may have a first thickness T1. In addition, the central portion of the second rib RB2 may have a second thickness T2 different from the first thickness T1. The thickness of the central portion of the first rib RB1 may be different from the thickness of the central portion of the second rib RB2. In detail, the thickness of the central portion of the first rib RB1 may be greater than the thickness of the central portion of the second rib RB2. That is, the first rib RB1 is positioned in the region of the third etched surface ES3 connecting adjacent through holes, and the second rib RB2 is positioned in the region of the second etched surface ES2 connecting adjacent through holes. In this case, the cross-sectional inclination angle of the third etched surface ES3 is greater than the cross-sectional inclination angle of the second etched surface ES2. Therefore, the thickness of the central portion of the first rib RB1 positioned in the region connecting the second etched surface ES2 having a larger cross-sectional inclination angle may be greater than the thickness of the central portion of the second rib RB2 positioned in the region connecting the third etched surface ES3 having a smaller cross-sectional inclination angle. Meanwhile, the cross-sectional inclination angle will be described below.

[0428] Fig.31 The cross sections are shown overlapping to illustrate Fig.30 View of the height difference and size between the cross section in the A-A' direction and the cross section in the B-B' direction.

[0429] First, a cross section along the AA' direction will be described. The AA' direction is a cross section crossing a central area between the first and third through holes TH1 and TH3 adjacent in a vertical direction. That is, the cross section along the AA' direction may not include the through hole TH.

[0430] The island-shaped portion IS of the other surface that is not etched between the third etched surface ES3 in the large surface hole and the third etched surface ES3 in the large surface hole as a deposition mask can be positioned in the cross section in the A-A' direction. Therefore, the island-shaped portion IS may include a surface parallel to one unetched surface of the deposition mask. Alternatively, the island-shaped portion IS may include a surface that is the same as or parallel to another unetched surface of the deposition mask.

[0431] Next, a cross section along the BB' direction will be described. The BB' direction is a cross section crossing the center of each of the first and second through holes TH1 and TH2 adjacent in the horizontal direction. That is, the cross section in the BB' direction may include a plurality of through holes TH.

[0432] One second rib RB2 may be positioned between the third through hole TH3 and the fourth through hole TH4 adjacent in the BB' direction. Another second rib RB2 may be positioned between the fourth through hole TH4 and the fifth through hole adjacent to the fourth through hole in the horizontal direction, but positioned in the opposite direction to the third through hole TH3. One through hole TH may be positioned between one rib and another rib. That is, one through hole TH may be positioned between two ribs RB adjacent in the horizontal direction.

[0433] In addition, the first rib RB1 can be positioned in the cross section of the AA' direction, wherein the first rib RB1 is a region connecting the etched surface ES3 in the large surface hole and the etched surface ES3 in the adjacent large surface hole to each other. Here, the first rib RB1 can be a region where the boundaries of two adjacent large surface holes are connected.

[0434] Since the first rib RB1 and the second rib RB2 are etching surfaces, their thicknesses may be smaller than that of the island portion IS. For example, the island portion may have a width of about 2 μm or more. That is, the width in a direction parallel to the other surface of the portion remaining unetched on the other surface may be about 2 μm or less. When the width of one end and the other end portion of an island portion IS is 2 μm or more, the total volume of the deposition mask 100 may be increased. The deposition mask 100 having such a structure ensures sufficient rigidity to resist the pulling force applied to the organic material deposition process, etc., and is therefore advantageous for maintaining the uniformity of the through-holes.

[0435] Fig.32 It shows that along Fig.30 A view of a cross-sectional view taken along line BB' in FIG. Fig.33 It shows that along Fig.30 A view of a cross-sectional view taken along line CC' in FIG. Fig.34 It shows that along Fig.30 A view of a cross-sectional view taken along line D-D' in FIG.

[0436] Figure 32 to Figure 34 A difference between a cross-sectional inclination angle of the second etched surface ES2 and a cross-sectional inclination angle of the third etched surface ES3 in the through hole is shown. Figure 32 to Figure 34 A difference between the thickness of the second rib RB2 positioned in the region connecting the second etch surface ES2 and the thickness of the first rib RB1 positioned in the region connecting the third etch surface ES3 is shown. Figure 32 to Figure 34A difference between a height between one surface of the deposition mask 100 having the small-surface holes V1 formed on the first rib RB1 and a communication portion and a height between one surface of the deposition mask 100 having the small-surface holes V1 formed on the second rib RB2 and a communication portion is shown.

[0437] Reference Figure 32 to Figure 34 , the cross section along the BB' direction, the cross section along the CC' direction, and the vertical cross section and horizontal cross section along the D-D' direction will be described. Figure 32 to Figure 34 The ribs RB1 and RB2 and the through holes TH between the ribs RB1 and RB2 located in the effective area are described.

[0438] Reference Figure 32 to Figure 34 In the deposition mask 100 according to the embodiment, the thickness of the active portion AA in which the through hole is formed by etching may be different from the thickness of the inactive portion UA ​​which is not etched. In detail, the thickness of the central portion of the first rib RB1 and the central portion of the second rib RB2 may be less than the thickness of the inactive portion UA ​​which is not etched.

[0439] In the deposition mask 100 according to the embodiment, the thickness of the ineffective portion UA ​​may be greater than the thickness of the effective portions AA1, AA2, and AA3. For example, in the deposition mask 100, the maximum thickness of the ineffective portion UA ​​or the non-deposition area NDA may be 30 μm or less. For example, in the deposition mask 100, the maximum thickness of the ineffective portion UA ​​or the non-deposition area NDA may be 25 μm or less. For example, in the deposition mask of the embodiment, the maximum thickness of the ineffective portion or the non-deposition area may be 15 μm to 25 μm. When the maximum thickness of the ineffective portion or the non-deposition area of ​​the deposition mask according to the present embodiment is greater than 30 μm, it may be difficult to form a through hole TH having a fine size due to the thick thickness of the metal plate 10 as a raw material of the deposition mask 100. In addition, when the maximum thickness of the ineffective portion UA ​​or the non-deposition area NDA of the deposition mask 100 is less than 15 μm, it may be difficult to form a through hole having a uniform size due to the thin thickness of the metal plate.

[0440] The maximum thickness T1 and T2 measured at the central portion of the first rib RB1 and the second rib RB2 may be about 15 μm or less. For example, the maximum thickness T1 and T2 measured at the center of each of the first rib RB1 and the second rib RB2 may be about 7 μm to about 10 μm. For example, the maximum thickness T1 and T2 measured at the center of each of the first rib RB1 and the second rib RB2 may be about 6 μm to about 9 μm. When the maximum thickness T1 and T2 measured at the center of each of the first rib RB1 and the second rib RB2 is greater than about 15 μm, it may be difficult to form an OLED deposition pattern with a high resolution of 500 PPI or more. In addition, when the maximum thickness T1 and T2 measured at the center of the first rib RB1 and the second rib RB2 is less than about 6 μm, it may be difficult to uniformly form a deposition pattern.

[0441] Meanwhile, the maximum thicknesses T1 and T2 measured at the center of each of the first rib RB1 and the second rib RB2 may be different from each other. In detail, the maximum thicknesses T1 and T2 measured at the center of each of the first rib RB1 and the second rib RB2 may have different values ​​while satisfying the above range. In more detail, the maximum thickness T1 measured at the center of the first rib RB1 may be greater than the maximum thickness T2 measured at the center of the second rib RB2. Within the above range, the maximum thickness T1 measured at the center of the first rib RB1 may have a value greater than the maximum thickness T2 measured at the center of the second rib RB2. In other words, the maximum thickness T1 measured at the center of the first rib RB1 may have a predetermined difference (Δ) from the maximum thickness T2 measured at the center of the second rib RB2.

[0442] The height of the small surface holes of the deposition mask 100 may be about 0.2 times to about 0.4 times the maximum thickness T1 and T2 of the second ribs RB1 and RB2. Therefore, the height of the small surface holes formed on the first rib RB1 may be different from the height of the small surface holes formed on the second rib RB2. In other words, in the small surface holes of the through hole, the height of the small surface holes in the first direction (specifically, the longitudinal direction) may be different from the height of the small surface holes in the second direction (specifically, the lateral direction). In detail, the height H2 of the small surface holes formed on the first rib RB1 may be greater than the height H1 of the small surface holes formed on the second rib RB2.

[0443] As an example, a maximum thickness measured at the center of the first rib RB1 or the second rib RB2 may be about 7 μm to about 9 μm, and a height of a small surface hole between one surface of the deposition mask 100 and the communication portion may be about 1.4 μm to about 3.5 μm.

[0444] A height H2 of the small surface holes at the first rib RB1 of the deposition mask 100 may be about 4.0 μm or less. A height H1 of the small surface holes at the second rib RB2 of the deposition mask 100 may be about 3.5 μm or less.

[0445] Preferably, a height H2 of the small surface holes at the first rib RB1 of the deposition mask 100 may be about 3.5 μm or less. A height H1 of the small surface holes at the second rib RB2 of the deposition mask 100 may be about 2.5 μm or less.

[0446] Preferably, the height H2 of the small surface hole at the first rib RB1 may be about 0.1 μm to about 3.4 μm. The height H1 of the small surface hole at the second rib RB2 may be about 0.1 μm to about 2.4 μm. For example, the height of the small surface hole V1 at the first rib RB1 of the deposition mask 100 may be about 0.5 μm to about 3.2 μm. For example, the height of the small surface hole V1 at the second rib RB1 of the deposition mask 100 may be about 0.5 μm to about 2.2 μm. For example, the height of the small surface hole at the first rib RB1 of the deposition mask 100 may be about 1 μm to about 3 μm. For example, the height of the small surface hole at the second rib RB2 of the deposition mask 100 may be about 1 μm to about 2 μm. Here, the height may be measured in the thickness measurement direction of the deposition mask 100, that is, in the depth direction, and the height may be the height measured from one surface of the deposition mask 100 to the connected portion.

[0447] When the height between one surface of the deposition mask 100 and the connected portion is greater than about 3.5 μm, poor deposition may occur due to a shadow effect in which the deposition material diffuses to an area larger than the area of ​​the through hole during OLED deposition. Therefore, the height of the small surface hole at the first rib RB1 is set to 3.5 μm or less, and the height of the small surface hole at the second rib RB2 is set to 3.0 μm or less. At the same time, the height of the small surface hole at the first rib RB1 and the height of the small surface hole at the second rib RB2 may have a predetermined difference (Δ).

[0448] In addition, the aperture W3 at one surface in which the small surface holes V1 of the deposition mask 100 are formed and the aperture W4 at the connecting portion which is the boundary between the small surface holes V1 and the large surface holes V2 may be similar to or different from each other. The aperture W3 at one surface in which the small surface holes V1 of the deposition mask 100 are formed may be larger than the aperture W4 at the connecting portion. For example, the difference between the aperture W3 at one surface of the deposition mask 100 and the aperture W4 at the connecting portion may be about 0.01 μm to about 1.1 μm. For example, the difference between the aperture W3 at one surface of the deposition mask and the aperture W4 at the connecting portion may be about 0.03 μm to about 1.1 μm. For example, the difference between the aperture W3 at one surface of the deposition mask and the aperture W4 at the connecting portion may be about 0.05 μm to about 1.1 μm.

[0449] When the difference between the aperture W1 at one surface of the deposition mask 100 and the aperture W2 at the communication portion is greater than about 1.1 μm, poor deposition may occur due to a shadow effect.

[0450] In addition, on the central portion of the second rib RB2, a cross-sectional inclination angle θ relative to an inner angle between a virtual first straight line and a virtual second straight line, which corresponds to the other surface of the deposition mask 100, and which connects one end E1 of the second etched surface ES2 of the large surface hole V2 with one end E2 of the connecting portion between the small surface hole V1 and the large surface hole V2, may be 35 to 45 degrees. On the central portion of the first rib RB1, a cross-sectional inclination angle θ corresponding to an inner angle between a virtual first straight line and a virtual third straight line, which corresponds to the other surface of the deposition mask 100, and which connects one end E3 of the third etched surface ES3 of the large surface hole V2 with one end E4 of the connecting portion, may be 45 to 55 degrees.

[0451] In other words, the cross-sectional inclination angle of the large surface hole can be defined as follows. The cross-sectional inclination angle of the large surface hole can be the inner angle between the virtual first straight line and the virtual second straight line. In this case, the first straight line can refer to another surface of the deposition mask corresponding to the second etched surface or the third etched surface of the large surface hole V2. In this case, the other surface can be an unetched surface of the deposition mask in a flat state. In addition, the virtual second straight line can be a straight line connecting one end of the etched surface of the large surface hole V2 with one end of the connecting portion.

[0452] Therefore, a deposition pattern having a high resolution of 400 PPI or more, particularly 500 PPI or more may be formed, and at the same time, the island portion IS may exist on the other surface of the deposition mask 100 .

[0453] According to an embodiment, the large surface hole of the through hole has a first cross-sectional inclination angle in the longitudinal direction and a second cross-sectional inclination angle greater than the first cross-sectional inclination angle in the lateral direction, and the thickness of the ribs arranged in the longitudinal direction can be increased by the difference between the first cross-sectional inclination angle and the second cross-sectional inclination angle, thereby ensuring the rigidity of the deposition mask. In addition, since the rigidity of the deposition mask is ensured, the length deformation can be minimized, and therefore, the pattern deposition efficiency can be improved by increasing the uniformity of the shape of the mask pattern and the position of the through hole.

[0454] In addition, according to an embodiment, an OLED pixel pattern may be uniformly deposited in all regions regardless of the position of the through hole by reducing the tilt angle of a large surface hole of the through hole in a direction perpendicular to the moving direction of the organic deposition container.

[0455] Fig.35 is a view showing a plan view of an effective portion of a deposition mask according to still another embodiment of the present invention, Fig.36 It shows Fig.35 a cross-sectional view of the second through hole in FIG. 1 , and Fig.37 It shows Fig.35 A cross-sectional view of the third through hole in FIG.

[0456] and Fig.30 Compared with the deposition mask in Fig.35 The deposition masks in FIG. 1 have differences in the through holes arranged at the outermost portion of the effective portion. Therefore, in the following, only the through holes arranged at the outermost portion of the effective portion are discussed. Fig.35 The outermost part of the effective part of Fig.30 Contrasting through holes are described.

[0457] Reference Fig.35 The effective portion of the deposition mask may include a plurality of through holes. The plurality of through holes may include a first through hole VH1 arranged in an inner region of the effective portion, a second through hole VH2 arranged in a first outermost portion of the effective portion, and a third through hole VH3 arranged in a second outermost portion of the effective portion.

[0458] The first through hole VH1 and Figure 31 to Figure 34 That is, the first through hole VH1 includes a second etched surface ES2 and a third etched surface ES3. The second etched surface ES2 includes a first secondary second etched surface ES2-1 and a second secondary second etched surface ES2-2 facing each other in the longitudinal direction and having the same first cross-sectional inclination angle.

[0459] In addition, the third etched surface ES3 includes a first secondary third etched surface ES3-1 and a second secondary third etched surface ES3-2 facing each other in the lateral direction and having the same second cross-sectional inclination angle. In addition, the first cross-sectional inclination angle of the first through hole VH1 is smaller than the second cross-sectional inclination angle of the first through hole VH1.

[0460] At the same time, the second through hole VH2 may be disposed at the first outermost portion of the effective part, and the third through hole VH3 may be disposed at the second outermost portion portion opposite to the first outermost portion. In detail, the first outermost portion may be the outermost region of the first longitudinal direction in the effective part. In this case, the first longitudinal direction may be the left direction. Therefore, the first outermost portion may be the region positioned at the leftmost position in the effective part. The second outermost portion may be the outermost region of the second longitudinal direction in the effective part. In this case, the second longitudinal direction may be the right direction. Therefore, the second outermost portion may be the region positioned at the rightmost position in the effective part.

[0461] The second through hole VH2 is provided in the first outermost portion, and the third through hole VH3 is provided in the second outermost portion.

[0462] Similar to the first through hole VH1, the large surface hole of the second through hole VH2 includes a second etched surface ES2 and a third etched surface ES3. In this case, the third etched surface ES3 of the large surface hole of the second through hole VH2 may have the same cross-sectional inclination angle as the third etched surface ES3 of the large surface hole of the first through hole VH1. However, the cross-sectional inclination angle of the second etched surface ES2 of the large surface hole of the second through hole VH2 may be different from the cross-sectional inclination angle of the second etched surface ES2 of the large surface hole of the first through hole VH1.

[0463] The second etched surface ES2 of the large surface hole of the second through hole VH2 has a third secondary second etched surface ES2 - 3 and a fourth secondary second etched surface ES2 - 4 facing each other in the longitudinal direction.

[0464] In this case, the third secondary second etch surface ES2-3 is located in a region adjacent to the uneffective portion UA, and the fourth secondary second etch surface ES2-4 is located in a region adjacent to an inner region (may be referred to as a central region) of the effective portion.

[0465] In addition, the third secondary second etched surface ES2-3 has a third cross-sectional inclination angle, and the fourth secondary second etched surface ES2-4 has a fourth cross-sectional inclination angle. In this case, the third cross-sectional inclination angle and the fourth cross-sectional inclination angle may be different from each other. That is, the third secondary second etched surface ES2-3 may have a cross-sectional inclination angle different from the cross-sectional inclination angle of the fourth secondary second etched surface ES2-4. Preferably, the cross-sectional inclination angle of the third secondary second etched surface ES2-3 may be greater than the cross-sectional inclination angle of the fourth secondary second etched surface ES2-4.

[0466] In addition, the thickness of the third rib connected to the third secondary second etching surface ES2-3 and the thickness of the fourth rib connected to the fourth secondary second etching surface ES2-4 may also be different from each other. That is, the thickness of the third rib connected to the third secondary second etching surface ES2-3 may be thicker than the thickness of the fourth rib connected to the fourth secondary second etching surface ES2-4.

[0467] The maximum thickness T3 and T4 measured at the center of each of the third and fourth ribs may be about 15 μm or less. For example, the maximum thickness T3 and T4 measured at the center of each of the third and fourth ribs may be about 7 μm to about 10 μm. For example, the maximum thickness T3 and T4 measured at the center of each of the third and fourth ribs may be about 6 μm to about 9 μm. When the maximum thickness T3 and T4 measured at the center of each of the third and fourth ribs exceeds about 15 μm, it may be difficult to form an OLED deposition pattern with a high resolution of 500 PPI or more. In addition, when the maximum thickness T3 and T4 measured at the center of each of the third and fourth ribs is less than about 6 μm, it may be difficult to uniformly form a deposition pattern.

[0468] Meanwhile, the maximum thicknesses T3 and T4 measured at the center of each of the third and fourth ribs may be different from each other. In detail, the maximum thicknesses T3 and T4 measured at the center of each of the third and fourth ribs may have different values ​​while satisfying the above range. In more detail, the maximum thickness T4 measured at the center of the fourth rib may be less than the maximum thickness T3 measured at the center of the third rib. Within the above range, the maximum thickness T4 measured at the center of the fourth rib may have a value smaller than the maximum thickness T3 measured at the center of the third rib.

[0469] The height of the small surface hole in the second through hole VH2 of the deposition mask 100 may be about 0.2 times to about 0.4 times the maximum thickness T3 and T4 measured at the center of the third rib and the fourth rib. Therefore, the height of the small surface hole formed on the central portion of the fourth rib may be different from the height of the small surface hole formed on the central portion of the third rib. In detail, the height H4 of the small surface hole formed on the central portion of the fourth rib may be less than the height H3 of the small surface hole formed on the central portion of the third rib.

[0470] As an example, the maximum thickness measured at the center of the third or fourth rib is about 7 to 9 μm, and the height of the small surface hole between one surface of the second through hole of the deposition mask 100 and the communicating portion is about 1.4 to 3.5 μm.

[0471] A height H4 of the small surface hole located at the center of the third rib of the deposition mask 100 may be about 4.0 μm or less. A height H1 of the small surface hole located at the center of the fourth rib of the deposition mask 100 may be about 3.5 μm or less.

[0472] Preferably, the height H3 of the small surface hole located at the center of the third rib of the second through hole of the deposition mask 100 may be about 3.5 μm or less. The height H4 of the small surface hole located at the center of the fourth rib of the second through hole of the deposition mask 100 may be about 2.5 μm or less.

[0473] Preferably, the height H3 of the small surface hole located at the third rib may be about 0.1 μm to about 3.4 μm. The height H4 of the small surface hole located at the fourth rib may be about 0.1 μm to about 2.4 μm. For example, the height of the small surface hole V1 located at the third rib of the deposition mask 100 may be about 0.5 μm to about 3.2 μm. For example, the height of the small surface hole V1 located at the fourth rib of the deposition mask 100 may be about 0.5 μm to about 2.2 μm. For example, the height of the small surface hole located at the central portion of the third rib of the deposition mask 100 may be about 1 μm to about 3 μm. For example, the height of the small surface hole located at the central portion of the fourth rib of the deposition mask 100 may be about 1 μm to about 2 μm. Here, the height may be measured in the thickness measurement direction of the deposition mask 100, that is, in the depth direction, and the height from one surface of the deposition mask 100 to the connected portion may be measured. When the height between one surface of the deposition mask 100 and the connected portion exceeds about 3.5 μm, poor deposition may occur due to a shadow effect in which the deposition material diffuses to an area larger than the area of ​​the through hole during OLED deposition. Therefore, the height of the small surface hole located at the central portion of the third rib is set to 3.5 μm or less, and the height of the small surface hole located at the central portion of the fourth rib is set to 3.0 μm or less.

[0474] In addition, on the central portion of the third rib, the cross-sectional inclination angle θ corresponding to the inner angle between the flat virtual first straight line and the virtual second straight line, wherein the flat virtual first straight line corresponds to the other surface of the deposition mask 100, and the virtual second straight line connects one end E5 of the third secondary second etched surface ES2-3 of the large surface hole V2 with one end E6 of the connecting portion, may be 45 degrees to 55 degrees. On the central portion of the fourth rib, the cross-sectional inclination angle θ corresponding to the inner angle between the flat virtual first straight line and the virtual third straight line, wherein the flat virtual first straight line corresponds to the other surface of the deposition mask 100, and the virtual third straight line connects one end E7 of the fourth secondary second etched surface ES2-4 of the large surface hole V2 with one end E8 of the connecting portion, may be 35 degrees to 45 degrees.

[0475] Meanwhile, similar to the first through hole VH1, the large surface hole of the third through hole VH3 includes a second etched surface ES2 and a third etched surface ES3. In this case, the third etched surface ES3 of the large surface hole of the third through hole VH3 may have the same cross-sectional inclination angle as the cross-sectional inclination angle of the third etched surface ES3 of the large surface hole of the first through hole VH1. However, the cross-sectional inclination angle of the second etched surface ES2 of the large surface hole of the third through hole VH3 may be different from the cross-sectional inclination angle of the second etched surface ES2 of the large surface hole of the first through hole VH1.

[0476] The second etched surface ES2 of the large-surface hole of the third through hole VH3 includes a fifth secondary second etched surface ES2 - 5 and a sixth secondary second etched surface ES2 - 6 facing each other in the longitudinal direction.

[0477] In this case, the fifth secondary second etch surface ES2-5 is located in a region adjacent to the uneffective portion UA, and the sixth secondary second etch surface ES2-5 is located in a region adjacent to an inner region (which may be referred to as a central region) of the effective portion.

[0478] In addition, the fifth secondary second etched surface ES2-5 has a fifth cross-sectional inclination angle, and the sixth secondary second etched surface ES2-6 has a sixth cross-sectional inclination angle. In this case, the fifth cross-sectional inclination angle and the sixth cross-sectional inclination angle may be different from each other. That is, the fifth secondary second etched surface ES2-5 may have a cross-sectional inclination angle different from the cross-sectional inclination angle of the sixth secondary second etched surface ES2-6. Preferably, the cross-sectional inclination angle of the fifth secondary second etched surface ES2-5 may be greater than the cross-sectional inclination angle of the sixth secondary second etched surface ES2-6.

[0479] In addition, the thickness of the central portion of the fifth rib connected to the fifth secondary second etched surface ES2-5 and the thickness of the central portion of the sixth rib connected to the sixth secondary second etched surface ES2-6 may also be different from each other. That is, the thickness of the central portion of the fifth rib connected to the fifth secondary second etched surface ES2-5 may be thicker than the thickness of the central portion of the sixth rib connected to the sixth secondary second etched surface ES2-6.

[0480] The maximum thickness T5 and T6 measured at the center of each of the fifth and sixth ribs may be about 15 μm or less. For example, the maximum thickness T5 and T6 measured at the center of each of the fifth and sixth ribs may be about 7 μm to about 10 μm. For example, the maximum thickness T5 and T6 measured at the center of each of the fifth and sixth ribs may be about 6 μm to about 9 μm. When the maximum thickness T5 and T6 measured at the center of each of the fifth and sixth ribs exceeds about 15 μm, it may be difficult to form an OLED deposition pattern with a high resolution of 500 PPI or more. In addition, when the maximum thickness T5 and T6 measured at the center of each of the fifth and sixth ribs is less than about 6 μm, it may be difficult to uniformly form a deposition pattern.

[0481] Meanwhile, the maximum thicknesses T5 and T6 measured at the center of each of the fifth and sixth ribs may be different from each other. In detail, the maximum thicknesses T5 and T6 measured at the center of each of the fifth and sixth ribs may have different values ​​while satisfying the above range. In more detail, the maximum thickness T6 measured at the center of the sixth rib may be less than the maximum thickness T5 measured at the center of the fifth rib. Within the above range, the maximum thickness T6 measured at the center of the sixth rib may have a value smaller than the maximum thickness T5 measured at the center of the fifth rib.

[0482] The height of the small surface holes in the third through hole VH3 of the deposition mask 100 may be about 0.2 times to about 0.4 times the maximum thicknesses T5 and T6 measured at the centers of the fifth and sixth ribs. Therefore, the height of the small surface holes formed on the sixth rib may be different from the height of the small surface holes formed on the fifth rib. In detail, the height H6 of the small surface holes formed on the sixth rib may be less than the height H5 of the small surface holes formed on the fifth rib.

[0483] As an example, the maximum thickness measured at the center of the fifth or sixth rib is about 7 to 9 μm, and the height of the small surface hole between one surface of the third through hole of the deposition mask 100 and the communicating portion is about 1.4 to 3.5 μm.

[0484] The height H5 of the small surface hole located at the central portion of the fifth rib of the deposition mask 100 may be about 4.0 μm or less. The height H6 of the small surface hole located at the central portion of the sixth rib of the deposition mask 100 may be about 3.5 μm or less. Preferably, the height H5 of the small surface hole located in the central portion of the fifth rib of the third through hole of the deposition mask 100 may be about 3.5 μm or less. The height H6 of the small surface hole located in the central portion of the sixth rib of the third through hole of the deposition mask 100 may be about 2.5 μm or less.

[0485] Preferably, the height H5 of the small surface hole located in the central portion of the fifth rib may be about 0.1 μm to about 3.4 μm. The height H6 of the small surface hole located in the central portion of the sixth rib may be 0.1 μm to about 2.4 μm. For example, the height of the small surface hole V1 located at the central portion of the fifth rib of the deposition mask 100 may be about 0.5 μm to about 3.2 μm. For example, the height of the small surface hole V1 located at the central portion of the sixth rib of the deposition mask 100 may be about 0.5 μm to about 2.2 μm. For example, the height of the small surface hole located at the central portion of the fifth rib of the deposition mask 100 may be about 1 μm to about 3 μm. For example, the height of the small surface hole located at the central portion of the sixth rib of the deposition mask 100 may be about 1 μm to about 2 μm. Here, the height may be measured in the thickness measurement direction of the deposition mask 100, that is, in the depth direction, and the height from one surface of the deposition mask 100 to the connected portion may be measured. When the height between one surface of the deposition mask 100 and the connected portion exceeds about 3.5 μm, poor deposition may occur due to a shadow effect in which the deposition material diffuses to an area larger than the area of ​​the through hole during OLED deposition. Therefore, the height of the small surface hole located at the central portion of the fifth rib is set to 3.5 μm or less, and the height of the small surface hole located at the central portion of the sixth rib is set to 3.0 μm or less.

[0486] In addition, on the central portion of the fifth rib, the cross-sectional inclination angle θ corresponding to the inner angle between the virtual first straight line and the virtual fourth straight line, where the virtual fourth straight line connects one end E9 of the fifth secondary second etched surface ES2-5 of the large surface hole V2 and one end E10 of the connecting portion, may be 45 degrees to 55 degrees. On the central portion of the sixth rib, the cross-sectional inclination angle θ corresponding to the inner angle between the virtual first straight line and the virtual fifth straight line, where the virtual fifth straight line connects one end E11 of the sixth secondary second etched surface ES2-6 of the large surface hole V2 and one end E12 of the connecting portion, may be 35 degrees to 45 degrees.

[0487] According to an embodiment, the large surface hole of the through hole has a first cross-sectional inclination angle in the longitudinal direction and a second cross-sectional inclination angle greater than the first cross-sectional inclination angle in the lateral direction, and the thickness of the ribs arranged in the longitudinal direction can be increased by the difference between the first cross-sectional inclination angle and the second cross-sectional inclination angle, so that the rigidity of the deposition mask can be ensured. In addition, since the rigidity of the deposition mask is ensured, the length deformation can be minimized, and therefore, the pattern deposition efficiency can be improved by increasing the uniformity of the shape of the mask pattern and the position of the through hole.

[0488] In addition, according to an embodiment, an OLED pixel pattern may be uniformly deposited in all regions regardless of the position of the through hole by reducing the tilt angle of a large surface hole of the through hole in a direction perpendicular to the moving direction of the organic deposition container.

[0489] The characteristics, structures, effects, etc. described in the above embodiments are included in at least one embodiment of the present invention, but are not limited to only one embodiment. In addition, those skilled in the art can combine or modify the characteristics, structures and effects shown in each embodiment for other embodiments. Therefore, it should be understood that such combinations and modifications are included within the scope of the present invention.

[0490] In addition, the above description has been focused on the embodiment, but is only illustrative and does not limit the present invention. It will be apparent to those skilled in the art that various modifications and applications not shown above are possible without departing from the basic features of the present embodiment. For example, the elements of the embodiment described herein can be modified and implemented. Moreover, it should be explained that the differences related to such modifications and applications are included within the scope of the present invention defined in the appended claims.

Claims

1. A metal material OLED deposition mask, the deposition mask comprising: Sedimentary and non-sedimentary areas, Wherein, the deposition area includes an effective part and an ineffective part, wherein the effective portion includes a plurality of through holes, the plurality of through holes including small surface holes along a depth direction from one surface and large surface holes connected to the small surface holes along a depth direction from another surface opposite to the one surface, and an island portion located between the plurality of large surface holes on the other surface, and wherein the non-deposition area includes a first groove portion, the first groove portion includes a groove along a depth direction of the deposition mask, and Wherein, the deposition area includes a second groove portion in an ineffective portion of the deposition area.

2. The metal material OLED deposition mask according to claim 1, wherein: The first groove portion includes one groove portion on one side of the deposition area and another groove portion on another side opposite to the one side of the deposition area.

3. The metal material OLED deposition mask according to claim 1, wherein: The second groove portion is disposed around an outer circumference of the effective portion.

4. The metal material OLED deposition mask according to claim 3, wherein: The second groove portion includes at least two through holes disposed in a horizontal direction and a vertical direction at an edge portion of the effective portion.

5. The metal material OLED deposition mask according to claim 1, wherein: The deposition mask includes at least one frame fixing region for fixing a mask frame to the non-deposition region.

6. The metal material OLED deposition mask according to claim 5, wherein: The frame fixing region is disposed between the first groove portion and the effective portion of the deposition region adjacent to the first groove portion.

7. The metal material OLED deposition mask according to claim 6, wherein: The deposition mask includes a third groove portion in the frame fixing region.

8. The metal material OLED deposition mask according to claim 7, wherein: The deposition mask includes a fourth groove portion in an outer peripheral region of the frame fixing region.

9. The metal material OLED deposition mask according to claim 1, wherein: The deposition mask includes semicircular opening portions at both end portions in a horizontal direction.

10. The metal material OLED deposition mask according to claim 9, wherein: The non-deposition region of the deposition mask includes the semicircular opening portion at each of both end portions in the horizontal direction.

11. The metal material OLED deposition mask according to claim 1, wherein: The first groove portion includes a semicircular groove.

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