Hydrogenated amorphous carbon film with long wear life and method of making same

Abstract

This invention provides a hydrogen-containing amorphous carbon thin film with long wear life and its preparation method, belonging to the field of composite material preparation. The long wear life a-C:H thin film includes a substrate and a Ti transition layer, a TiN hydrogen barrier layer, and a TiCH layer formed from bottom to top on the substrate surface. x Hydrogen storage layer, Ti / C / H transition layer, and hydrogen-containing α-C layer. Strong bonding between the hydrogen-containing DLC ​​film and the metal substrate is achieved through the connection transition between the Ti transition layer and the metal substrate. A TiN hydrogen barrier layer is deposited to prevent TiCH from being blocked. x Hydrogen atoms diffuse and leak from the hydrogen storage layer toward the substrate. This is achieved through the deposition of TiCH... x The hydrogen storage layer utilizes the hydrogen storage properties of Ti to immobilize and store hydrogen atoms, providing hydrogen atoms to the surface hydrogen-containing α-C layer during film operation. This is achieved by depositing a Ti / C transition layer to realize TiCH. x The connection and transition between the hydrogen storage layer and the hydrogen-containing α-C layer improves compatibility and achieves good bonding.

Description

Technical Field

[0001] This invention relates to the field of composite material preparation, specifically to a hydrogen-containing amorphous carbon thin film with long wear life and its preparation method. Background Technology

[0002] Hydrogen-containing amorphous carbon (aC:H) thin films are a type of hydrogen-containing diamond-like carbon (DLC) thin film, made from sp 2 C and sp 3 Composed of carbon and hydrogen atoms bonded together, C is a novel lubricating film material with characteristics such as low vacuum friction coefficient, good chemical stability, and strong corrosion resistance. It is widely used in mechanical, electronic, optical, thermal, acoustic, and medical fields.

[0003] In a vacuum environment, hydrogen atoms can passivate the dangling bonds of carbon atoms on the surface of hydrogen-containing DLC ​​films, thus providing a certain degree of lubrication, making them suitable for applications requiring reduced friction and wear. However, during friction and wear, hydrogen atoms are easily desorbed under thermal effects, exposing the dangling bonds on the carbon atom surface. This leads to increased adhesion between the film and the friction pair, a higher coefficient of friction, and a shorter wear life. Therefore, maintaining a low coefficient of friction while fabricating aC:H films with a long wear life presents a challenge. Summary of the Invention

[0004] The technical problem to be solved by the present invention is to overcome the lifespan problem of hydrogen-containing amorphous carbon (aC:H) thin films in the prior art, and to provide a hydrogen-containing amorphous carbon (aC:H) thin film with long wear life and its preparation method.

[0005] To achieve the above objectives, the present invention provides the following technical solution:

[0006] A hydrogen-containing amorphous carbon (aC:H) thin film with long wear life, comprising a substrate, a Ti transition layer, a TiN hydrogen barrier layer, and a TiCH layer. x Hydrogen storage layer (x=0.5~1), Ti / C / H transition layer and hydrogen-containing aC layer;

[0007] The Ti transition layer is prepared on the surface of the substrate by vacuum magnetron sputtering.

[0008] The TiN hydrogen barrier layer is formed on the surface of the Ti transition layer by vacuum magnetron sputtering.

[0009] The TiCH x The hydrogen storage layer was prepared on the surface of the TiN hydrogen barrier layer by vacuum magnetron sputtering.

[0010] The Ti / C / H transition layer is in TiCH xThe surface of the hydrogen storage layer was prepared using vacuum magnetron sputtering technology;

[0011] The hydrogen-containing aC layer is prepared on the surface of the Ti / C / H transition layer by vacuum magnetron sputtering.

[0012] The total thickness of the film is 2.00-2.30 μm;

[0013] The coefficient of friction of the thin film under vacuum conditions is less than 0.02;

[0014] The substrate is a metal substrate.

[0015] A method for preparing a hydrogen-containing amorphous carbon thin film with long wear life includes the following steps:

[0016] Step (1): Pre-treat the substrate;

[0017] Step (2): A Ti transition layer is prepared on the pretreated substrate surface using vacuum magnetron sputtering technology;

[0018] Step (3): A TiN hydrogen barrier layer is prepared on the surface of the Ti transition layer using vacuum magnetron sputtering technology;

[0019] Step (4): TiCH is prepared on the surface of the TiN hydrogen barrier layer using vacuum magnetron sputtering technology. x Hydrogen storage layer;

[0020] Step (5) involves using vacuum magnetron sputtering technology on the TiCH material. x A Ti / C / H transition layer was prepared on the surface of the hydrogen storage layer;

[0021] Step (6): A hydrogen-containing aC layer is prepared on the surface of the Ti / C / H transition layer using vacuum magnetron sputtering technology.

[0022] In step (1), the method for pre-treating the substrate is as follows: the surface of the substrate is ground and polished, then washed in acetone solution and alcohol solution in sequence, dried, and finally bombarded with an anode layer ion source under vacuum conditions to remove impurities and oxide layer.

[0023] The method for bombarding the substrate surface using an anode layer ion source under vacuum conditions is as follows: the cleaned and dried substrate is placed in a vacuum chamber, fixed on a workpiece holder, and a vacuum is drawn to achieve a vacuum level of 5 × 10⁻⁶. - 3Below Pa, the vacuum chamber is heated to 190~210℃, the anode layer ion source is turned on to bombard the substrate surface, the anode layer ion source voltage is 1500 V, argon gas is introduced into the vacuum chamber, the vacuum degree of the chamber is 0.1~1 Pa, the substrate pressure is -200V, and the cleaning time is 1800 s.

[0024] In step (2), the method for preparing the Ti transition layer on the substrate surface using vacuum magnetron sputtering technology is as follows: the Ti target is energized, the Ti target power is 5 kW, the argon flow rate is gradually increased from 0 to 700 sccm, the substrate bias voltage is -50 V, and the deposition time is 180 s.

[0025] In step (3), the method for preparing the TiN hydrogen barrier layer on the surface of the Ti transition layer using vacuum magnetron sputtering technology is as follows: After the Ti transition layer is prepared, nitrogen gas is introduced into the vacuum chamber. The nitrogen gas flow rate is gradually increased from 0 to 100 sccm, the argon gas flow rate is gradually decreased from 700 sccm to 600 sccm, the gas pressure is 0.5~1 Pa, the Ti power is 5 kW, the substrate bias voltage is -80 V, and the deposition time is 900 s.

[0026] In step (4), TiCH is prepared on the surface of the TiN hydrogen barrier layer using vacuum magnetron sputtering technology. x The method for preparing the hydrogen storage layer is as follows: After the TiN hydrogen barrier layer is prepared, acetylene gas is introduced into the vacuum chamber. The acetylene gas flow rate is gradually increased from 0 to 100 sccm, the argon gas flow rate is maintained at 600 sccm, the gas pressure is 0.5~1 Pa, the Ti target power is 6 kW, the substrate bias voltage is -100 V, and the deposition time is 1200 s.

[0027] In step (5), vacuum magnetron sputtering technology is used on the TiCH x The method for preparing a Ti / C / H transition layer on the surface of the hydrogen storage layer is as follows: TiCH x After the hydrogen storage layer is prepared, acetylene gas is introduced into the vacuum chamber. The acetylene gas flow rate is gradually increased from 0 to 200 sccm, the argon gas flow rate is gradually decreased from 600 sccm to 500 sccm, the gas pressure is 0.5~1 Pa, the Ti target power is 2 kW, the substrate bias voltage is -100 V, and the deposition time is 360 s.

[0028] In step (6), the method for preparing a hydrogen-containing aC layer on the surface of the Ti / C / H transition layer using vacuum magnetron sputtering technology is as follows: After the Ti / C / H transition layer is prepared, acetylene gas is introduced into the vacuum chamber. The acetylene gas flow rate is maintained at 200 sccm, the argon gas flow rate is maintained at 500 sccm, the gas pressure is 0.5~1 Pa, the graphite target power is 2 kW, the substrate bias voltage is -150V, and the deposition time is 1800 s.

[0029] The technical solution of this invention has the following advantages:

[0030] This invention provides a hydrogen-containing amorphous carbon (aC:H) thin film with long wear life and its preparation method, belonging to the field of composite material preparation. The long wear life aC:H thin film includes a substrate, and a Ti transition layer, a TiN hydrogen barrier layer, and a TiCH layer formed from bottom to top on the substrate surface. x Hydrogen storage layer, Ti / C / H transition layer and hydrogen-containing aC layer. Ti transition layer, TiN hydrogen barrier layer, TiCH x The hydrogen storage layer, Ti / C / H transition layer, and hydrogen-containing aC layer were all prepared by vacuum magnetron sputtering. A strong bond between the hydrogen-containing DLC ​​film and the metal substrate was achieved through the connection between the Ti transition layer and the metal substrate. A TiN hydrogen barrier layer was deposited to prevent TiCH from being absorbed. x Hydrogen atoms diffuse and leak from the hydrogen storage layer toward the substrate. This is achieved through the deposition of TiCH... x The hydrogen storage layer utilizes the hydrogen storage properties of Ti to immobilize and store hydrogen atoms, providing hydrogen atoms to the hydrogen-containing aC layer on the surface during film operation. This is achieved by depositing a Ti / C / H transition layer, thus realizing TiCH. x A smooth transition between the hydrogen storage layer and the hydrogen-containing aC layer is achieved, enhancing compatibility and ensuring good bonding. The hydrogen-containing aC layer is deposited using vacuum magnetron sputtering, ensuring that the carbon atoms in the hydrogen-containing aC thin film are primarily spaced by sp atoms. 2 Hybridized bonds increase the carbon proportion in the graphite-like phase; hydrogen atoms in the film can passivate the dangling bonds of carbon atoms on the aC:H film surface, TiCH x Hydrogen atoms in the hydrogen storage layer can replenish the losses of the aC:H thin film when working in a vacuum environment, thereby continuously passivating the dangling bonds of carbon atoms on the surface and achieving a long wear life.

[0031] The hydrogen-containing amorphous carbon (aC:H) thin film with long wear life provided by this invention achieves strong bonding between the hydrogen-containing DLC ​​thin film and the metal substrate through a Ti transition layer and a metal substrate. A TiN hydrogen barrier layer is deposited to prevent TiCH from being absorbed. x Hydrogen atoms diffuse and leak from the hydrogen storage layer toward the substrate. This is achieved through the deposition of TiCH... xThe hydrogen storage layer utilizes the hydrogen storage properties of Ti to immobilize and store hydrogen atoms, providing hydrogen atoms to the hydrogen-containing aC layer on the surface during film operation. This is achieved by depositing a Ti / C / H transition layer, thus realizing TiCH. x A smooth transition between the hydrogen storage layer and the hydrogen-containing aC layer is achieved, enhancing compatibility and ensuring good bonding. The hydrogen-containing aC layer is deposited using vacuum magnetron sputtering, ensuring that the carbon atoms in the hydrogen-containing aC thin film are primarily spaced by sp atoms. 2 Hybridized bonds increase the carbon proportion in the graphite-like phase; hydrogen atoms in the film can passivate the dangling bonds of carbon atoms on the aC:H film surface, TiCH x Hydrogen atoms in the hydrogen storage layer can replenish the losses of the aC:H thin film when working in a vacuum environment, thereby continuously passivating the dangling bonds of carbon atoms on the surface and achieving a long wear life. Attached Figure Description

[0032] To more clearly illustrate the specific embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the specific embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are some embodiments of the present invention. For those skilled in the art, other drawings can be obtained from these drawings without creative effort.

[0033] Figure 1 A schematic diagram of the structure of an aC:H thin film with a long wear life;

[0034] Figure 2 A schematic diagram of aC:H thin film preparation method with long wear life;

[0035] Figure 3 A schematic diagram of aC:H thin film with long wear life from a transmission electron microscope.

[0036] Figure 4 Vacuum tribological test curves for aC:H thin films with long wear life;

[0037] Figure reference numerals: 1-substrate; 2-Ti transition layer; 3-TiN hydrogen barrier layer; 4-TiCH x Hydrogen storage layer; 5-Ti / C / H transition layer; 6-Hydrogen-containing aC layer; 7-Workpiece holder; 8-Magnetron sputtering graphite target; 9-Anode layer ion source; 10-Magnetron sputtering Ti target; 11-Heating wire. Detailed Implementation

[0038] The following embodiments are provided to better understand the present invention and are not limited to the preferred embodiments described. They do not constitute a limitation on the content and scope of protection of the present invention. Any product that is the same as or similar to the present invention, derived by any person under the guidance of the present invention or by combining the features of the present invention with other prior art, falls within the protection scope of the present invention.

[0039] Where specific experimental steps or conditions are not specified in the embodiments, they can be performed according to the conventional experimental steps or conditions described in the literature in this field. All raw materials or instruments used are commercially available conventional products, including but not limited to those used in the embodiments of this application.

[0040] The following will be combined with the appendix Figure 1 and attached Figure 2 This application provides a detailed description of a hydrogen-containing amorphous carbon (aC:H) thin film with long wear life and its preparation method, as provided in the embodiments of this application.

[0041] Please see Figure 1 This application provides a schematic diagram of the structure of a hydrogen-containing amorphous carbon (aC:H) thin film with a long wear life. For example... Figure 1 As shown, the hydrogen-containing amorphous carbon (aC:H) thin film with long wear life in this embodiment includes: a substrate 1, a Ti transition layer 2, a TiN hydrogen barrier layer 3, and a TiCH layer 4. x Hydrogen storage layer 4, Ti / C / H transition layer 5, hydrogen-containing aC layer 6. Among them, Ti transition layer 2 is on the surface of substrate 1, TiN hydrogen barrier layer 3 is on the surface of Ti transition layer 2, and TiCH... x Hydrogen storage layer 4 is on the surface of TiN hydrogen barrier layer 3, and Ti / C / H transition layer 5 is on TiCH. x The surface of hydrogen storage layer 4, and the surface of hydrogen-containing aC layer 6 on Ti / C / H transition layer 5.

[0042] Please see Figure 2 This application provides a schematic diagram of a method for preparing a hydrogen-containing amorphous carbon (aC:H) thin film with a long wear life. (See attached diagram.) Figure 2 As shown, the preparation of a hydrogen-containing amorphous carbon (aC:H) thin film with long wear life in this embodiment is carried out in a vacuum chamber. A workpiece holder 7 is disposed at the center of the vacuum chamber for fixing the workpiece to be processed; the vacuum chamber has eight sides, on which are spaced magnetron sputtering graphite targets 8 (for depositing hydrogen-containing aC layers), an anode ion source 9 (for cleaning the metal substrate), and magnetron sputtering Ti targets 10 (for depositing Ti transition layers, TiN hydrogen barrier layers, and TiCH layers). x Hydrogen storage layer and Ti / C / H transition layer) and heating wire 11 (for heating the vacuum chamber).

[0043] Example 1

[0044] This embodiment provides a hydrogen-containing amorphous carbon (aC:H) thin film with long wear life, comprising: a 9Cr18 stainless steel substrate, a Ti transition layer, a TiN hydrogen barrier layer, and a TiCH layer. x Hydrogen storage layer, Ti / C / H transition layer, and hydrogen-containing aC layer; the specific steps are as follows:

[0045] (1) Substrate pretreatment;

[0046] A 9Cr18 stainless steel substrate was selected and first ground and polished to achieve a surface roughness less than Ra 0.8. It was then ultrasonically cleaned in acetone solution for 10 minutes, followed by cleaning in alcohol solution for 10 minutes. Afterward, it was dried in a drying oven at 70°C for 20 minutes. The cleaned and dried substrate was then placed in a vacuum chamber, fixed on a workpiece holder, and a vacuum was created to achieve a vacuum level of 5 × 10⁻⁶. -3 Below Pa, the vacuum chamber is heated to 200°C, and the anode layer ion source is turned on to bombard the substrate surface. The anode layer ion source voltage is 1500 V. Argon gas is introduced into the vacuum chamber, the vacuum degree of the chamber is 0.1~1 Pa, the substrate pressure is -200V, and the cleaning time is 1800 s.

[0047] (2) A Ti transition layer was prepared on the substrate surface using vacuum magnetron sputtering technology;

[0048] The vacuum chamber was evacuated to a vacuum level better than 5 × 10⁻⁶. -3 Pa, energize the Ti target, and perform vacuum magnetron sputtering deposition on the substrate surface. The Ti target power is 5 kW, the argon flow rate is gradually increased from 0 to 700 sccm, the substrate bias voltage is -50 V, and the deposition time is 180 s to form a Ti transition layer.

[0049] (3) A TiN hydrogen barrier layer was prepared on the surface of the Ti transition layer using vacuum magnetron sputtering technology;

[0050] Nitrogen gas is introduced into the vacuum chamber, with the nitrogen flow rate gradually increasing from 0 to 100 sccm and the argon flow rate gradually decreasing from 700 sccm to 600 sccm. The gas pressure is 0.5~1 Pa, the Ti power is 5 kW, the substrate bias voltage is -80 V, and the deposition time is 900 s to form a TiN hydrogen barrier layer.

[0051] (4) TiCH was prepared on the surface of TiN hydrogen barrier layer by vacuum magnetron sputtering. x Hydrogen storage layer;

[0052] Acetylene gas was introduced into the vacuum chamber, with the acetylene gas flow rate gradually increased from 0 to 100 sccm. Argon gas flow rate was maintained at 600 sccm, the gas pressure was 0.5–1 Pa, the Ti target power was 6 kW, the substrate bias voltage was -100 V, and the deposition time was 1200 s, forming TiCH. x Hydrogen storage layer.

[0053] (5) Vacuum magnetron sputtering technology was used in TiCH x A Ti / C / H transition layer was prepared on the surface of the hydrogen storage layer;

[0054] Acetylene gas is introduced into the vacuum chamber, with the acetylene gas flow rate gradually increasing from 0 to 200 sccm, the argon gas flow rate gradually decreasing from 600 sccm to 500 sccm, the gas pressure being 0.5~1 Pa, the Ti target power being 2 kW, the substrate bias voltage being -100V, and the deposition time being 360 s, to form a Ti / C / H transition layer.

[0055] (6) A hydrogen-containing aC layer was prepared on the surface of the Ti / C / H transition layer using vacuum magnetron sputtering technology;

[0056] Acetylene gas is introduced into the vacuum chamber at a flow rate of 200 sccm, argon gas at a flow rate of 500 sccm, and a pressure of 0.5~1 Pa. The graphite target power is 2 kW, the substrate bias voltage is -150 V, and the deposition time is 1800 s to form a hydrogen-containing aC layer.

[0057] (7) Stop the deposition and coating until the temperature of the vacuum chamber is below 80°C. Remove the substrate to obtain a hydrogen-containing amorphous carbon (aC:H) thin film with long wear life.

[0058] Transmission electron microscopy (TEM) images of hydrogen-containing amorphous carbon (aC:H) thin films with long wear life obtained are shown below. Figure 3 As shown, the vacuum tribological test curve is as follows: Figure 4 As shown.

[0059] Example 2

[0060] This embodiment provides a hydrogen-containing amorphous carbon (aC:H) thin film with long wear life, comprising: a hard alloy substrate, a Ti transition layer, a TiN hydrogen barrier layer, and a TiCH layer. x Hydrogen storage layer, Ti / C / H transition layer and hydrogen-containing aC layer;

[0061] The specific steps are as follows:

[0062] (1) Substrate pretreatment;

[0063] A cemented carbide substrate was selected and first ground and polished to achieve a surface roughness less than Ra 0.8. It was then ultrasonically cleaned in acetone solution for 10 minutes, followed by cleaning in alcohol solution for 10 minutes. Afterward, it was dried in a drying oven at 70°C for 20 minutes. The cleaned and dried substrate was then placed in a vacuum chamber, fixed on a workpiece holder, and a vacuum was created to achieve a vacuum level of 5 × 10⁻⁶. -3 Below Pa, the vacuum chamber is heated to 210°C, and the anode layer ion source is turned on to bombard the substrate surface. The anode layer ion source voltage is 1500 V. Argon gas is introduced into the vacuum chamber, the vacuum degree of the chamber is 0.1~1 Pa, the substrate pressure is -200V, and the cleaning time is 1800 s.

[0064] (2) A Ti transition layer was prepared on the substrate surface using vacuum magnetron sputtering technology;

[0065] The vacuum chamber was evacuated to a vacuum level better than 5 × 10⁻⁶. -3 Pa, energize the Ti target, and perform vacuum magnetron sputtering deposition on the substrate surface. The Ti target power is 5 kW, the argon flow rate is gradually increased from 0 to 700 sccm, the substrate bias voltage is -50 V, and the deposition time is 180 s to form a Ti transition layer.

[0066] (3) A TiN hydrogen barrier layer was prepared on the surface of the Ti transition layer using vacuum magnetron sputtering technology;

[0067] Nitrogen gas is introduced into the vacuum chamber, with the nitrogen flow rate gradually increasing from 0 to 100 sccm and the argon flow rate gradually decreasing from 700 sccm to 600 sccm. The gas pressure is 0.5~1 Pa, the Ti power is 5 kW, the substrate bias voltage is -80 V, and the deposition time is 900 s to form a TiN hydrogen barrier layer.

[0068] (4) TiCH was prepared on the surface of TiN hydrogen barrier layer by vacuum magnetron sputtering. x Hydrogen storage layer;

[0069] Acetylene gas was introduced into the vacuum chamber, with the acetylene gas flow rate gradually increased from 0 to 100 sccm. Argon gas flow rate was maintained at 600 sccm, the gas pressure was 0.5–1 Pa, the Ti target power was 6 kW, the substrate bias voltage was -100 V, and the deposition time was 1200 s, forming TiCH. x Hydrogen storage layer.

[0070] (5) Vacuum magnetron sputtering technology was used in TiCH x A Ti / C / H transition layer was prepared on the surface of the hydrogen storage layer;

[0071] Acetylene gas is introduced into the vacuum chamber, with the acetylene gas flow rate gradually increasing from 0 to 200 sccm, the argon gas flow rate gradually decreasing from 600 sccm to 500 sccm, the gas pressure being 0.5~1 Pa, the Ti target power being 2 kW, the substrate bias voltage being -100V, and the deposition time being 360 s, to form a Ti / C / H transition layer.

[0072] (6) A hydrogen-containing aC layer was prepared on the surface of the Ti / C / H transition layer using vacuum magnetron sputtering technology;

[0073] Acetylene gas is introduced into the vacuum chamber at a flow rate of 200 sccm, argon gas at a flow rate of 500 sccm, and a pressure of 0.5~1 Pa. The graphite target power is 2 kW, the substrate bias voltage is -150 V, and the deposition time is 1800 s to form a hydrogen-containing aC layer.

[0074] (7) Stop the deposition and coating until the temperature of the vacuum chamber is below 80°C. Remove the substrate to obtain a hydrogen-containing amorphous carbon (aC:H) thin film with long wear life.

[0075] Example 3

[0076] This embodiment provides a hydrogen-containing amorphous carbon (aC:H) thin film with long wear life, comprising: a high-speed steel substrate, a Ti transition layer, a TiN hydrogen barrier layer, and a TiCH layer. x Hydrogen storage layer, Ti / C / H transition layer and hydrogen-containing aC layer;

[0077] The specific steps are as follows:

[0078] (1) Substrate pretreatment;

[0079] A high-speed steel substrate was selected and first ground and polished to achieve a surface roughness less than Ra 0.8. It was then ultrasonically cleaned in acetone solution for 10 minutes, followed by cleaning in alcohol solution for 10 minutes. Afterward, it was dried in a drying oven at 70°C for 20 minutes. The cleaned and dried substrate was then placed in a vacuum chamber, fixed on a workpiece holder, and a vacuum was created to achieve a vacuum level of 5 × 10⁻⁶. -3 Below Pa, the vacuum chamber is heated to 190~210℃, the anode layer ion source is turned on to bombard the substrate surface, the anode layer ion source voltage is 1500 V, argon gas is introduced into the vacuum chamber, the chamber vacuum degree is 0.6 Pa, the substrate pressure is -200V, and the cleaning time is 1800 s.

[0080] (2) A Ti transition layer was prepared on the substrate surface using vacuum magnetron sputtering technology;

[0081] The vacuum chamber was evacuated to a vacuum level better than 5 × 10⁻⁶.-3 Pa, energize the Ti target, and perform vacuum magnetron sputtering deposition on the substrate surface. The Ti target power is 5 kW, the argon flow rate is gradually increased from 0 to 700 sccm, the substrate bias voltage is -50 V, and the deposition time is 180 s to form a Ti transition layer.

[0082] (3) A TiN hydrogen barrier layer was prepared on the surface of the Ti transition layer using vacuum magnetron sputtering technology;

[0083] Nitrogen gas is introduced into the vacuum chamber, with the nitrogen flow rate gradually increasing from 0 to 100 sccm and the argon flow rate gradually decreasing from 700 sccm to 600 sccm. The gas pressure is 0.5~1 Pa, the Ti power is 5 kW, the substrate bias voltage is -80 V, and the deposition time is 900 s to form a TiN hydrogen barrier layer.

[0084] (4) TiCH was prepared on the surface of TiN hydrogen barrier layer by vacuum magnetron sputtering. x Hydrogen storage layer;

[0085] Acetylene gas was introduced into the vacuum chamber, with the acetylene gas flow rate gradually increased from 0 to 100 sccm. Argon gas flow rate was maintained at 600 sccm, the gas pressure was 0.5–1 Pa, the Ti target power was 6 kW, the substrate bias voltage was -100 V, and the deposition time was 1200 s, forming TiCH. x Hydrogen storage layer.

[0086] (5) Vacuum magnetron sputtering technology was used in TiCH x A Ti / C / H transition layer was prepared on the surface of the hydrogen storage layer;

[0087] Acetylene gas is introduced into the vacuum chamber, with the acetylene gas flow rate gradually increasing from 0 to 200 sccm, the argon gas flow rate gradually decreasing from 600 sccm to 500 sccm, the gas pressure being 0.5~1 Pa, the Ti target power being 2 kW, the substrate bias voltage being -100V, and the deposition time being 360 s, to form a Ti / C / H transition layer.

[0088] (6) A hydrogen-containing aC layer was prepared on the surface of the Ti / C / H transition layer using vacuum magnetron sputtering technology;

[0089] Acetylene gas is introduced into the vacuum chamber at a flow rate of 200 sccm, argon gas at a flow rate of 500 sccm, and a pressure of 0.5~1 Pa. The graphite target power is 2 kW, the substrate bias voltage is -150 V, and the deposition time is 1800 s to form a hydrogen-containing aC layer.

[0090] (7) Stop the deposition and coating until the temperature of the vacuum chamber is below 80°C. Remove the substrate to obtain a hydrogen-containing amorphous carbon (aC:H) thin film with long wear life.

[0091] The physicochemical properties of the hydrogen-containing amorphous carbon (aC:H) thin films with long wear life prepared in Examples 1-3 of this application were tested.

[0092] Friction coefficient test under vacuum: The tribological properties of the sample were tested using a vacuum ball-and-disc friction tester. The friction pair was a 9Cr18 steel ball with a diameter of 8 mm. The test conditions were: load 5 N, friction radius 8 mm, rotation speed 500 r / min, and rotation number 1000 r.

[0093] Wear life test under vacuum environment: The tribological properties of the sample were tested using a vacuum ball-disc friction tester. The friction pair was a 9Cr18 steel ball with a diameter of 8 mm. The test conditions were: load 5 N, friction radius 8 mm, and rotation speed 500 r / min.

[0094] The physicochemical properties of the hydrogen-containing amorphous carbon (aC:H) thin films with long wear life prepared in Examples 1-3 are shown in Table 1.

[0095] Table 1

[0096]

[0097] Test results show that the total thickness of the hydrogen-containing amorphous carbon (aC:H) films with long wear life prepared in Examples 1-3 of this application is 2.00-2.30 μm, and the coefficient of friction is less than 0.02 under vacuum. Comparative Example 1 is a conventional hydrogen-containing amorphous carbon (aC:H) film prepared by vacuum magnetron sputtering. Although it has a low coefficient of friction under vacuum, it has a short wear life and high wear rate under vacuum, making it unable to work stably for a long time in a vacuum environment. Comparative Example 2 is a hydrogen-containing amorphous carbon (aC:H) film prepared by conventional plasma-enhanced vacuum magnetron sputtering deposition. Although it has good tribological properties, its wear life is short under vacuum. The hydrogen-containing amorphous carbon (aC:H) films with long wear life prepared in Examples 1-3 have significantly higher wear life under vacuum than Comparative Example 2, and also exhibit good tribological properties under vacuum. Therefore, it can be seen that the hydrogen-containing amorphous carbon (aC:H) thin films with long wear life prepared in Examples 1-3 exhibit excellent long wear life under the premise of having a low coefficient of friction in a vacuum environment, showing good comprehensive performance, and will surely be suitable for more demanding operating conditions.

[0098] Obviously, the above embodiments are merely illustrative examples for clear explanation and are not intended to limit the implementation. Those skilled in the art will recognize that other variations or modifications can be made based on the above description. It is neither necessary nor possible to exhaustively list all possible implementations here. However, obvious variations or modifications derived therefrom are still within the scope of protection of this invention.

Claims

1. A hydrogen-containing amorphous carbon thin film with long wear life, characterized in that: The thin film includes a substrate, a Ti transition layer, a TiN hydrogen barrier layer, and a TiCH layer. x Hydrogen storage layer, Ti / C / H transition layer and hydrogen-containing aC layer; The Ti transition layer is prepared on the surface of the substrate by vacuum magnetron sputtering. The TiN hydrogen barrier layer is formed on the surface of the Ti transition layer by vacuum magnetron sputtering. The TiCH x The hydrogen storage layer was prepared on the surface of the TiN hydrogen barrier layer by vacuum magnetron sputtering. The Ti / C / H transition layer is in TiCH x The surface of the hydrogen storage layer was prepared using vacuum magnetron sputtering technology; The hydrogen-containing aC layer was prepared on the surface of the Ti / C / H transition layer by vacuum magnetron sputtering. The substrate is a metal substrate; The total thickness of the film is 2.00-2.30 μm; The coefficient of friction of the thin film under vacuum conditions is less than 0.

02.

2. A method for preparing a hydrogen-containing amorphous carbon thin film with long wear life as described in claim 1, characterized in that... The steps of this method include: Step (1): Pre-treat the substrate; Step (2): A Ti transition layer is prepared on the pretreated substrate surface using vacuum magnetron sputtering technology; Step (3): A TiN hydrogen barrier layer is prepared on the surface of the Ti transition layer using vacuum magnetron sputtering technology; Step (4): TiCH is prepared on the surface of the TiN hydrogen barrier layer using vacuum magnetron sputtering technology. x Hydrogen storage layer; Step (5) involves using vacuum magnetron sputtering technology on the TiCH material. x A Ti / C / H transition layer was prepared on the surface of the hydrogen storage layer; Step (6): A hydrogen-containing aC layer is prepared on the surface of the Ti / C / H transition layer using vacuum magnetron sputtering technology.

3. The method for preparing a hydrogen-containing amorphous carbon thin film with long wear life according to claim 2, characterized in that: In step (1), the method for pre-treating the substrate is as follows: the surface of the substrate is ground and polished, then washed in acetone solution and alcohol solution in sequence, dried, and finally bombarded with an anode layer ion source under vacuum conditions to remove impurities and oxide layer. The method for bombarding the substrate surface using an anode layer ion source under vacuum conditions is as follows: the cleaned and dried substrate is placed in a vacuum chamber, fixed on a workpiece holder, and a vacuum is drawn to achieve a vacuum level of 5 × 10⁻⁶. -3 Below Pa, the vacuum chamber is heated to 190~210℃, the anode layer ion source is turned on to bombard the substrate surface, the anode layer ion source voltage is 1500 V, argon gas is introduced into the vacuum chamber, the chamber vacuum degree is 0.1~1 Pa, the substrate pressure is -200V, and the cleaning time is 1800 s.

4. A method for preparing a hydrogen-containing amorphous carbon thin film with long wear life according to claim 2 or 3, characterized in that: In step (2), the method for preparing the Ti transition layer on the substrate surface using vacuum magnetron sputtering technology is as follows: the Ti target is energized, the Ti target power is 5 kW, the argon flow rate is gradually increased from 0 to 700 sccm, the substrate bias voltage is -50 V, and the deposition time is 180 s.

5. The method for preparing a hydrogen-containing amorphous carbon thin film with long wear life according to claim 2, characterized in that: In step (3), the method for preparing the TiN hydrogen barrier layer on the surface of the Ti transition layer using vacuum magnetron sputtering technology is as follows: After the Ti transition layer is prepared, nitrogen gas is introduced into the vacuum chamber. The nitrogen gas flow rate is gradually increased from 0 to 100 sccm, the argon gas flow rate is gradually decreased from 700 sccm to 600 sccm, the gas pressure is 0.5~1 Pa, the Ti power is 5 kW, the substrate bias voltage is -80 V, and the deposition time is 900 s.

6. The method for preparing a hydrogen-containing amorphous carbon thin film with long wear life according to claim 2, characterized in that: In step (4), TiCH is prepared on the surface of the TiN hydrogen barrier layer using vacuum magnetron sputtering technology. x The method for preparing the hydrogen storage layer is as follows: After the TiN hydrogen barrier layer is prepared, acetylene gas is introduced into the vacuum chamber. The acetylene gas flow rate is gradually increased from 0 to 100 sccm, the argon gas flow rate is maintained at 600 sccm, the gas pressure is 0.5~1 Pa, the Ti target power is 6 kW, the substrate bias voltage is -100 V, and the deposition time is 1200 s.

7. The method for preparing a hydrogen-containing amorphous carbon thin film with long wear life according to claim 2, characterized in that: In step (5), vacuum magnetron sputtering technology is used on the TiCH x The method for preparing a Ti / C / H transition layer on the surface of the hydrogen storage layer is as follows: TiCH x After the hydrogen storage layer is prepared, acetylene gas is introduced into the vacuum chamber. The acetylene gas flow rate is gradually increased from 0 to 200 sccm, the argon gas flow rate is gradually decreased from 600 sccm to 500 sccm, the gas pressure is 0.5~1 Pa, the Ti target power is 2 kW, the substrate bias voltage is -100 V, and the deposition time is 360 s.

8. The method for preparing a hydrogen-containing amorphous carbon thin film with long wear life according to claim 2, characterized in that: In step (6), the method for preparing a hydrogen-containing aC layer on the surface of the Ti / C / H transition layer using vacuum magnetron sputtering technology is as follows: After the Ti / C / H transition layer is prepared, acetylene gas is introduced into the vacuum chamber. The acetylene gas flow rate is maintained at 200 sccm, the argon gas flow rate is maintained at 500 sccm, the gas pressure is 0.5~1 Pa, the graphite target power is 2 kW, the substrate bias voltage is -150 V, and the deposition time is 1800 s.

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