Substrate bearing device, vapor deposition module, vapor deposition equipment and vapor deposition method

Abstract

The invention discloses a substrate bearing device, a vapor deposition module, vapor deposition equipment and a vapor deposition method, and relates to the technical field of vapor deposition, the substrate bearing device comprises at least one bearing unit, the bearing unit comprises a substrate bearing seat and two substrate fixing rings arranged on the two sides of the substrate bearing seat respectively, the substrate fixing rings can be connected to the two sides of the substrate bearing seat and clamp and fix two substrates, the number of the substrates capable of being fixed to the bearing units is increased, the vapor deposition module comprises ventilation devices and substrate bearing devices, and each bearing unit is correspondingly provided with one ventilation unit. Each ventilation unit faces the substrate fixing rings on the two sides of each bearing unit and can introduce reaction gas into the substrate, the vapor deposition equipment comprises a reaction chamber and at least one vapor deposition module arranged in the reaction chamber, and the reaction gas is introduced into each bearing unit through each ventilation unit; the vapor deposition modules can perform chemical vapor deposition at the same time, and the preparation yield and production efficiency of the metal target material are improved.

Description

Technical Field

[0001] The present invention relates to the field of vapor deposition technology, and in particular to a substrate supporting device, a vapor deposition module, a vapor deposition device and a method. Background Art

[0002] Target material, also known as sputtering target, plays a vital role in the process of preparing thin films. When preparing thin films, the target material is bombarded by high-speed energetic particles (such as laser or ion beam), and the atoms or molecules on its surface are sputtered out and deposited on the substrate to form a thin film. The purity, density and grain structure of the target material have a direct impact on the quality of the thin film. Metal targets usually have the characteristics of high melting point, high density, high thermal conductivity, etc., and their application fields cover optics, semiconductors, magnetic material modification and medical devices.

[0003] There are various methods for preparing metal targets, such as smelting and casting, powder metallurgy, chemical vapor deposition (CVD), physical vapor deposition (PVD), etc. At present, the mainstream method for preparing metal targets in China is powder metallurgy: high-purity metal powder is prepared into metal billets through pressing, sintering and other processes, and then mechanically processed to obtain metal targets of the required size. Since powder metallurgy has to go through multiple steps such as high-temperature forging, sintering, and rolling, it not only wastes a lot of energy, but also has complex processes and long procedures, which leads to secondary pollution of metal targets during processing. In addition, there are many quality control links, which can easily cause quality fluctuations. The purity of the obtained metal targets can only reach 5N (i.e. 99.999%), which is quite different from the metal targets prepared by chemical vapor deposition.

[0004] There are many related studies on the preparation of metal targets by chemical vapor deposition in China. The purity of chemical vapor deposition can reach 6N (i.e., 99.9999%) or above. However, the existing chemical vapor deposition equipment usually only has one substrate support in the reaction chamber, and can only prepare one metal target at a time. The output is very low and cannot meet the growing production needs. Summary of the invention

[0005] The purpose of the present invention is to provide a substrate supporting device, a vapor deposition module, a vapor deposition equipment and a method to solve the problems existing in the above-mentioned prior art and improve the preparation output and production efficiency of metal targets.

[0006] To achieve the above object, the present invention provides the following solutions:

[0007] The present invention provides a substrate bearing device, comprising at least one bearing unit, wherein the bearing unit comprises a substrate bearing seat and two substrate fixing rings respectively arranged on both sides of the substrate bearing seat, and the substrate fixing rings can be connected to both sides of the substrate bearing seat and clamp and fix two substrates.

[0008] Preferably, the substrate supporting seat is heat-conducting and has a heating module disposed therein, and the heating module is capable of heating the substrate supporting seat.

[0009] Preferably, it further comprises at least one power supply rod, and each heating module in each of the carrying units is electrically connected to one of the power supply rods, and each of the power supply rods is detachably connected and can conduct electricity after connection to supply power to each of the heating modules.

[0010] The present invention also provides a vapor deposition module, comprising a ventilation device and a substrate supporting device as described in any of the above items, wherein the ventilation device comprises at least one ventilation unit, and each supporting unit is correspondingly provided with one ventilation unit, and an outlet of each ventilation unit is arranged toward the substrate fixing ring on both sides of each supporting unit and can introduce reaction gas into the substrate.

[0011] Preferably, the ventilation unit includes a ventilation main pipe and two ventilation branches, one end of the ventilation main pipe is used to introduce reaction gas, and the other end is connected to one end of the two ventilation branches, and the other end of each ventilation branch pipe faces the substrate fixing ring and can introduce reaction gas to each substrate.

[0012] Preferably, one end of each of the ventilation branches facing the substrate is connected to a gas homogenizing disk, and each of the gas homogenizing disks is provided with at least one layer of homogenizing filter to homogenize the reaction gas.

[0013] Preferably, the ventilation device further comprises a ventilation main pipe, which is connected to each of the ventilation main pipes, and the reaction gas is introduced into each of the ventilation main pipes.

[0014] The present invention further provides a vapor deposition device, comprising a reaction chamber and at least one vapor deposition module as described above and arranged in the reaction chamber.

[0015] Preferably, the reaction chamber comprises a reaction cylinder and two sealing members, and both ends of the reaction cylinder are detachably and sealingly connected with one of the sealing members.

[0016] The present invention also provides a vapor deposition method using the vapor deposition apparatus as described in any one of the above items, comprising the following steps:

[0017] Placing the substrate on both sides of each substrate supporting seat, and connecting the substrate fixing ring to the substrate supporting seat to clamp and fix the substrate;

[0018] Disposing a substrate supporting device in the reaction chamber;

[0019] The reaction gas is introduced into each of the carrier units by using each of the ventilation units.

[0020] Compared with the prior art, the present invention has achieved the following technical effects:

[0021] The substrate supporting device provided by the present invention comprises at least one supporting unit, and substrate fixing rings are arranged on both sides of the substrate supporting seat of each supporting unit. Each substrate fixing ring is connected to both sides of the substrate supporting seat, so that each supporting unit can clamp and fix two substrates at the same time, and then two metal target materials can be deposited on each supporting unit at the same time, thereby improving the preparation output and production efficiency of the metal target materials.

[0022] In the vapor deposition module of the present invention, each ventilation unit can respectively introduce reaction gas toward the substrates on both sides of each supporting unit, so that the chemical gas can pass through the middle hollow of the substrate fixing ring 222 and deposit two metal targets on the surfaces of two substrates at the same time, thereby improving the preparation output and production efficiency of the metal targets.

[0023] Furthermore, a gas homogenizing disk is connected to one end of the ventilation branch pipe facing the substrate, and at least one layer of homogenizing filter is arranged on the gas homogenizing disk to homogenize the reaction gas to ensure the uniformity of the deposited metal target.

[0024] The present invention also provides a vapor deposition device, which arranges at least one vapor deposition module in a reaction chamber, and introduces reaction gas toward each carrying unit through each ventilation unit. Each vapor deposition module in the reaction chamber can perform chemical vapor deposition simultaneously, thereby improving the preparation output and production efficiency of metal targets. BRIEF DESCRIPTION OF THE DRAWINGS

[0025] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings required for use in the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0026] Figure 1 This is a schematic diagram of the structure of a load-bearing unit in one embodiment;

[0027] Figure 2 A schematic diagram of the structure of two vapor deposition modules in one embodiment;

[0028] Figure 3 is a cross-sectional view of a gas homogenization disk in one embodiment;

[0029] Figure 4 A schematic diagram of the structure of a vapor deposition device in one embodiment

[0030] In the figure: 1-reaction chamber; 11-reaction cylinder; 12-seal; 13-vacuum pipe; 14-protective gas inlet pipe; 15-gas exhaust pipe; 2-vapor deposition module; 21-ventilation unit; 211-ventilation main pipe; 212-ventilation branch pipe; 213-ventilation main pipe; 214-valve; 215-meter; 216-gas homogenizing disk; 217-homogenizing filter; 22-carrying unit; 221-substrate bearing seat; 222-substrate fixing ring; 3-power supply rod. DETAILED DESCRIPTION

[0031] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0032] The purpose of the present invention is to provide a substrate supporting device, a vapor deposition module, a vapor deposition equipment and a method to solve the problems existing in the above-mentioned prior art and improve the preparation output and production efficiency of metal targets.

[0033] In order to make the above-mentioned objects, features and advantages of the present invention more obvious and easy to understand, the present invention is further described in detail below with reference to the accompanying drawings and specific embodiments.

[0034] Embodiment 1

[0035] This embodiment provides a substrate supporting device, such as Figure 1 As shown, at least one carrying unit 22 is included, and the carrying unit 22 includes a substrate carrying seat 221 and two substrate fixing rings 222 respectively arranged on both sides of the substrate carrying seat, and the substrate fixing rings 222 can be connected to the two sides of the substrate carrying seat 221 and clamp and fix two substrates, so that two substrates can be fixed on one carrying unit 22, which increases the number of substrates that can be fixed on the carrying unit 22, and enables chemical gases to pass through the middle hollow of the substrate fixing ring 222 and simultaneously deposit two metal targets on the surfaces of the two substrates, thereby improving the preparation output and production efficiency of the metal targets.

[0036] In another preferred implementation of this embodiment, the substrate is selected from a material suitable for metal deposition, such as copper, nickel and gallium arsenide, and the substrate can provide a surface for the chemical vapor deposition deposit to adhere and grow, so that the deposition process proceeds in an orderly manner, and the uniformity of the deposition is controlled and the chemical reaction is promoted.

[0037] In another more preferred implementation of the present embodiment, the substrate support seat 221 is heat-conducting and is internally provided with a heating module, which can heat the substrate support seat 221, thereby providing high-temperature reaction conditions for the reaction gas. In the high-temperature environment, the reaction gas can obtain sufficient energy to fully activate the molecules of the reaction gas to induce a chemical reaction. Preferably, the heating module is an electromagnetic induction heating module, which can enable the substrate support seat to reach the set temperature in a shorter time, and the temperature distribution on the surface of the substrate support seat is more uniform. Compared with heating the reaction gas and then depositing it on the substrate, heating the base support seat can enable the reaction gas to be accurately deposited on the metal surface, thereby avoiding the reaction gas from being deposited in other positions.

[0038] In another more preferred implementation of this embodiment, the substrate supporting seat 221 and the substrate fixing rings 222 on both sides should be made of high temperature resistant and high rigidity materials, such as 304 stainless steel, aluminum alloy or SiC coated graphite, to ensure that the substrate is firmly fixed in a high temperature environment, thereby ensuring the normal chemical vapor deposition.

[0039] In another more preferred implementation of the present embodiment, the set temperature of the substrate support 221 is determined according to the deposited material and the substrate material. When chemical vapor deposition of the metal target is performed, the temperature can generally be set between 550°C and 1300°C. When preparing a high-purity tungsten target, the temperature is preferably set at 850°C to promote the chemical reaction rate of tungsten and improve the purity, crystallinity and density of the tungsten film.

[0040] In another preferred implementation of this embodiment, Figure 1 As shown, the substrate supporting device also includes at least one power supply rod 3, and the heating modules in each supporting unit 22 are electrically connected to a power supply rod 3. Each power supply rod is detachably connected and can conduct electricity after connection to supply power to each heating module, so that the substrate supporting seat 211 is heated to a set temperature, promoting a chemical reaction of the reaction gas on the surface of the substrate.

[0041] In another preferred implementation of this embodiment, Figure 2 As shown, the number of the carrying units can be determined according to needs, for example, two, the two carrying units 22 are respectively fixed on the two power supply poles 3 and electrically connected to the power supply poles 3, the two power supply poles 3 are detachably connected in the vertical direction and can conduct electricity, the substrate carrying device can fix four substrates and heat two substrate carrying seats at the same time; the number of the carrying units can also be four, the four carrying units are respectively fixed on the four power supply poles and electrically connected to the power supply poles, the four power supply poles are detachably connected in the vertical direction and can conduct electricity, the substrate carrying device can fix eight substrates and heat four substrate carrying seats at the same time.

[0042] Embodiment 2

[0043] This embodiment provides a vapor deposition module 2, such as Figure 2 As shown, it includes a ventilation device and a substrate supporting device in Example 1, the ventilation device includes at least one ventilation unit 21, and each supporting unit 22 is correspondingly provided with a ventilation unit 21, the gas outlet of each ventilation unit 21 is arranged toward the substrate fixing ring 222 on both sides of each supporting unit 22 and can pass the reaction gas to the substrate, the reaction gas undergoes redox reaction on the surface of the substrate and performs chemical vapor deposition, so that each supporting unit 22 generates two metal targets at the same time.

[0044] In another preferred implementation of this embodiment, Figure 2 As shown, the ventilation unit 21 includes a ventilation main pipe 211 and two ventilation branches 212. One end of the ventilation main pipe 211 is used to introduce reaction gas, and the other end is connected to one end of the two ventilation branches 212. The other end of each ventilation branch pipe 212 faces the substrate fixing ring 222 and can introduce reaction gas to each substrate, so that the reaction gas undergoes chemical vapor deposition on the surface of the substrate.

[0045] Taking the preparation of tungsten target by vapor deposition as an example, tungsten hexafluoride (WF6) and hydrogen (H2) are passed to the substrate surface through each ventilation branch pipe 212 in a ratio of 6:1, and tungsten hexafluoride and hydrogen undergo redox reaction on the substrate surface to deposit a high-purity tungsten target.

[0046] In another preferred implementation of this embodiment, each ventilation branch pipe 212 is provided with a valve 214 and a meter 215 to independently adjust the amount of air intake on each ventilation branch pipe, thereby controlling the chemical reaction on each substrate.

[0047] In another preferred implementation of this embodiment, each ventilation branch pipe is connected to a gas homogenizing disk 216 at one end facing the substrate. Figure 3 As shown, each gas homogenizing disk 216 is provided with at least one layer of homogenizing filter 217, and the homogenizing filter 217 has a fine mesh structure. When the fluid passes through, the homogenizing filter 217 will form a certain blocking effect on the fluid, and the flow direction and speed of the fluid will change. The fluid that originally flows faster and flows in a single direction will be dispersed into many fine streams passing through the mesh holes of the homogenizing filter 217, thereby making the distribution of the reaction gas in space more uniform. Preferably, one to three layers of homogenizing filter can be set on the gas homogenizing disk, and more preferably, the homogenizing filter 217 has two layers to make the reaction gas more fully homogenized, while preventing too many layers of the homogenizing filter from having too much blocking effect on the reaction gas and affecting the speed of chemical vapor deposition.

[0048] In another preferred implementation of this embodiment, the ventilation device further includes a ventilation main pipe 213, which is connected to each ventilation main pipe 211, and introduces reaction gas into each ventilation main pipe 211 to allow the reaction gas to perform chemical vapor deposition on the substrate surface.

[0049] In another more preferred implementation manner of the present embodiment, the number of the carrying units 22 is two, the number of the ventilation units 21 is also correspondingly two, the carrying units 22 and the ventilation units 21 together constitute two vapor deposition modules 2, and the ventilation device can perform chemical vapor deposition on four substrate surfaces at the same time; the number of the carrying units 22 is four, the number of the ventilation units 21 is also correspondingly four, the carrying units 22 and the ventilation units 21 together constitute four vapor deposition modules 2, and the ventilation device can perform chemical vapor deposition on eight substrate surfaces at the same time.

[0050] Embodiment 3

[0051] This embodiment provides a vapor deposition device, such as Figure 4 As shown, it includes a reaction chamber 1 and at least one vapor deposition module 2 of embodiment 2 arranged in the reaction chamber. The reaction chamber provides a chemical vapor deposition working environment for the vapor deposition module, and introduces reaction gas to each carrying unit through each ventilation unit. Each vapor deposition module 2 in the reaction chamber 1 can perform chemical vapor deposition at the same time, thereby improving the preparation output and production efficiency of metal targets.

[0052] In another preferred implementation of this embodiment, the number of vapor deposition modules 2 is 4, which can deposit 8 metal targets simultaneously.

[0053] In another preferred implementation manner of the present embodiment, the reaction chamber 1 comprises a reaction cylinder 11 and two sealing members 12 , and both ends of the reaction cylinder 11 are detachably and hermetically connected with a sealing member 12 .

[0054] In another preferred implementation of this embodiment, the material of the reaction cylinder 11 should be an insulating, transparent material with stable chemical properties, such as quartz glass.

[0055] In another preferred implementation of the present embodiment, the seal 12 should be made of a material that is easy to disassemble, airtight and insulating, such as a rubber sealing plug. The bottom end of the power supply rod at the bottom is fixed to the seal 12 on the bottom side of the reaction chamber, and a power supply port made of PPA material is provided at the connection between the seal 12 and the power supply rod for connecting to an external power source and supplying power to the power supply rod 3, so that the power supply rod 3 supplies power to the heating module on the substrate support.

[0056] In another more preferred implementation manner of the present embodiment, two supporting units 22 are respectively fixed on two power supply rods 3 in the vertical direction and electrically connected to the power supply rods 3. The two power supply rods 3 are detachably connected and can conduct electricity. The bottom end of the power supply rod at the bottom is connected to the seal 12 to form a group of substrate supporting devices. Two groups of identical substrate supporting devices are also arranged on the sealing plug. A ventilation device corresponding to each group of substrate supporting devices is also arranged in the reaction chamber 1, so that a vapor deposition array capable of simultaneously forming 2*2*2=8 portions of metal target materials is formed in the reaction chamber, thereby further improving the preparation output and production efficiency of the metal target materials.

[0057] In another more preferred implementation manner of the present embodiment, four supporting units 22 are respectively fixed on four power supply rods 3 in the vertical direction and electrically connected to the power supply rods 3. The four power supply rods 3 are detachably connected end to end and can conduct electricity. The bottom end of the bottom power supply rod is connected to the seal 12 to form a group of substrate supporting devices. Three groups of identical substrate supporting devices are also arranged on the sealing plug. A ventilation device corresponding to each group of substrate supporting devices is also arranged in the reaction chamber 1, so that a vapor deposition array capable of simultaneously forming 2*4*3=24 metal target materials is formed in the reaction chamber, thereby further improving the preparation output and production efficiency of the metal target materials.

[0058] In another preferred implementation of this embodiment, when more than two carrying units 22 are built in the vertical direction, the ventilation main pipes 213 of each group of ventilation devices are connected and fixed by fixed beams to ensure the stability of each group of ventilation devices.

[0059] In another preferred implementation manner of the present embodiment, a vacuum tube 13, a protective gas inlet pipe 14 and a gas exhaust pipe 15 are provided on the cylinder. The vacuum tube 13 is used to evacuate the reaction chamber 1 before the reaction to prevent the mixing of gases such as oxygen or carbon dioxide from affecting the vapor deposition reaction. The protective gas inlet pipe 14 is used to introduce protective gas, such as argon (Ar), into the reaction chamber 1 before the reaction to ensure that no solid impurities are generated during the vapor deposition process. The gas exhaust pipe 15 is used to exhaust the gas in the reaction chamber 1 during and after the vapor deposition, and discharge it into a recovery device to prevent harmful gases generated by the reaction from polluting the environment.

[0060] Embodiment 4

[0061] This embodiment provides a vapor deposition method using the vapor deposition device in Embodiment 3, comprising the following steps:

[0062] The substrates are placed on both sides of each substrate supporting seat 221, and the substrate fixing ring 222 is connected to the substrate supporting seat 221 to clamp and fix the substrates, so that each supporting unit 22 can clamp and fix two substrates at the same time, thereby increasing the number of substrates that can be fixed on the supporting unit 22;

[0063] Each carrying unit of the substrate carrying device is fixed on the power supply rod 3 and electrically connected to the power supply rod 3. The bottom end of the power supply rod 3 located at the bottom is fixed on the sealing member 12 at the bottom side of the reaction chamber and electrically connected to the power supply port on the sealing member 12. The substrate carrying device is arranged in the reaction chamber 1, and the sealing members 12 at the top and bottom of the reaction chamber 1 are fastened.

[0064] The reaction chamber 1 is evacuated using the vacuum tube 13 to prevent gases such as oxygen or carbon dioxide from mixing in and affecting the vapor deposition reaction. Then, the protective gas is introduced into the reaction chamber 1 using the protective gas inlet pipe 14 to ensure that no solid impurities are generated during the vapor deposition process. The substrate is heated to a predetermined temperature using the heating module on the substrate support seat 221, and the reaction gas is introduced toward each support unit 22 using each ventilation unit 21. The reaction gas undergoes an oxidation-reduction reaction on the surface of the substrate to generate a metal target material. During and after the vapor deposition process, the gas in the reaction chamber is discharged into a recovery device using the gas exhaust pipe 15.

[0065] The present invention uses specific examples to illustrate the principles and implementation methods of the present invention. The above examples are only used to help understand the method and core ideas of the present invention. At the same time, for those skilled in the art, according to the ideas of the present invention, there will be changes in the specific implementation methods and application scope. In summary, the content of this specification should not be understood as limiting the present invention.

Claims

1. A substrate supporting device, characterized in that: It comprises at least one bearing unit, which comprises a substrate bearing seat and two substrate fixing rings respectively arranged on both sides of the substrate bearing seat, and the substrate fixing rings can be connected to both sides of the substrate bearing seat and clamp and fix two substrates.

2. The substrate supporting device according to claim 1, characterized in that: The substrate supporting seat is heat-conducting and has a heating module disposed therein, and the heating module is capable of heating the substrate supporting seat.

3. The substrate supporting device according to claim 2, characterized in that: It also includes at least one power supply rod, and the heating modules in each of the carrying units are electrically connected to one of the power supply rods. The power supply rods are detachably connected and can conduct electricity after connection to supply power to each of the heating modules.

4. A vapor deposition module, characterized in that: It comprises a ventilation device and a substrate supporting device as described in any one of claims 1 to 3, wherein the ventilation device comprises at least one ventilation unit, and each supporting unit is correspondingly provided with one ventilation unit, and the gas outlet of each ventilation unit is arranged toward the substrate fixing ring on both sides of each supporting unit and can introduce reaction gas into the substrate.

5. The vapor deposition module according to claim 4, characterized in that: The ventilation unit includes a ventilation main pipe and two ventilation branches. One end of the ventilation main pipe is used to introduce reaction gas, and the other end is connected to one end of the two ventilation branches. The other end of each ventilation branch pipe faces the substrate fixing ring and can introduce reaction gas to each substrate.

6. The vapor deposition module according to claim 5, characterized in that: One end of each of the ventilation branches facing the base is connected to a gas homogenizing disk, and each of the gas homogenizing disks is provided with at least one layer of homogenizing filter to homogenize the reaction gas.

7. The vapor deposition module according to claim 5, characterized in that: The ventilation device also includes a ventilation main pipe, which is connected to each of the ventilation main pipes to introduce reaction gas into each of the ventilation main pipes.

8. A vapor deposition device, characterized in that: The invention comprises a reaction chamber and at least one vapor deposition module as claimed in any one of claims 4 to 7 arranged in the reaction chamber.

9. The vapor deposition apparatus according to claim 8, characterized in that: The reaction chamber comprises a reaction cylinder and two sealing members, and two ends of the reaction cylinder are detachably and sealingly connected with one of the sealing members.

10. A vapor deposition method using the vapor deposition apparatus according to any one of claims 8 to 9, characterized in that: The steps include: Placing the substrate on both sides of each substrate supporting seat, and connecting the substrate fixing ring to the substrate supporting seat to clamp and fix the substrate; Disposing a substrate supporting device in the reaction chamber; The reaction gas is introduced into each of the carrier units by using each of the ventilation units.

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