Crystal wire breakage detection method, device, equipment and medium
By using laser sensors to detect the diameter of the crystal rod in the process of preparing crystal silicon in the direct drawing method, the problem of difficulty in detecting the broken crystal wire in the existing technology is solved, efficient and accurate detection is achieved, and the loss of manpower and capacity is reduced .
Patent Information
- Application Number
- CN202411653655.9
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-11-19
- Publication Date
- 2025-02-18
AI Technical Summary
In the process of preparing crystalline silicon by direct drawing method, it is difficult for the prior art to detect the crystalline wire disconnection in a timely and accurate manner, resulting in labor consumption and capacity loss.
During the growth of the crystal rod, a laser sensor is used to detect the diameter of the crystal rod according to a predetermined detection frequency. By calculating the difference between the actual diameter data and the preset data, it is determined whether the crystalline wire is broken.
The crystal wire disconnection has been realized in a timely manner, reducing labor consumption, and avoiding the production capacity and product losses caused by the crystal rod pulled after the crystal wire is broken, which does not meet product requirements.
Smart Images
Figure CN119468949A_ABST
Abstract
Description
Technical Field
[0001] The present invention relates to the field of semiconductor manufacturing technology, and in particular to a crystal line break detection method, device, equipment and medium. Background Art
[0002] The Czochralski method is one of the common methods for preparing crystalline silicon. The preparation process includes: in a crystal furnace, immersing the seed crystal in the silicon melt in the crucible, rotating the seed crystal and the crucible while pulling the seed crystal, and then sequentially performing the steps of seeding, shoulder release, shoulder rotation, equal diameter and tailing at the lower end of the seed crystal to prepare a crystalline silicon rod. The crystalline silicon rod has a distinct characteristic crystal line in the axial direction. During the crystal pulling process, under the influence of various factors, crystal changes (i.e., the disappearance of single crystal characteristics) will occur, which is also called crystal line breakage.
[0003] In the related art, during the crystal pulling process, it is necessary to manually check the operation status of the single crystal furnace at regular intervals and judge by naked eyes whether the crystal wire is broken. The wire break phenomenon cannot be discovered in time, and it is labor-intensive. In addition, the crystal rod pulled after the crystal wire is broken is a polycrystalline silicon rod, which does not meet product requirements, resulting in production capacity and product losses. Summary of the invention
[0004] The embodiments of the present disclosure provide a method, device, equipment and medium for detecting a broken crystal line, which can detect the broken crystal line phenomenon in a timely and accurate manner.
[0005] The technical solutions provided by the embodiments of the present disclosure are as follows:
[0006] In a first aspect, an embodiment of the present disclosure provides a method for detecting a broken crystal line, comprising:
[0007] During the crystal ingot growth process, the diameter of the crystal ingot is detected by a laser sensor according to a predetermined detection frequency to obtain the actual diameter data of the crystal ingot;
[0008] Whether the crystal wire is broken is determined according to the actual diameter data of the crystal rod and the preset diameter data of the crystal rod.
[0009] Exemplarily, the detecting the diameter of the crystal rod by using a laser sensor to obtain actual diameter data of the crystal rod specifically includes:
[0010] Controlling the laser sensor to rotate around a first central axis so that the laser scans an area between a first position point and a second position point, wherein the first position point is a central point position of the crystal rod on a solid-liquid interface, the second position point is a positive projection position of the laser sensor on the solid-liquid interface, and the first central axis is parallel to the solid-liquid interface and perpendicular to the axial direction of the crystal rod;
[0011] Based on the sensing signal of the laser sensor, a predetermined scanning parameter when the laser sensor scans the edge of the crystal rod is acquired, wherein the predetermined scanning parameter includes at least one of a laser scanning angle of the laser sensor and a scanning distance of the laser sensor;
[0012] Based on the predetermined scanning parameters, actual diameter data of the crystal rod is calculated.
[0013] Exemplarily, the calculating and obtaining the actual diameter data of the crystal rod based on the predetermined scanning parameters specifically includes:
[0014] The actual diameter data D of the crystal rod is calculated according to the following formula:
[0015]
[0016] Wherein, H represents the height of the laser sensor relative to the solid-liquid interface in the direction perpendicular to the solid-liquid interface; α represents the laser scanning angle when the laser scans to the junction of the crystal rod and the solid-liquid interface; θ represents the laser scanning angle when the laser sensor scans to the first position point.
[0017] Exemplarily, at different growth stages of the crystal rod, the diameter of the crystal rod is detected by a laser sensor according to a predetermined detection frequency to obtain actual diameter data of the crystal rod, specifically including:
[0018] The predetermined detection frequency is set based on the rotation period of the crystal rod during the crystal rod growth process.
[0019] Exemplarily, the determining whether the crystal wire is broken according to the actual diameter data of the crystal rod and the preset crystal rod diameter data specifically includes:
[0020] Pre-storing a crystal rod diameter change reference curve corresponding to the crystal rod at different growth stages, wherein the crystal rod diameter change reference curve includes a reference diameter value of the diameter data at the corresponding crystal line;
[0021] Generating a crystal rod actual diameter change curve according to the crystal rod actual diameter data, wherein the crystal rod actual diameter change curve includes an actual diameter value of the diameter data at a corresponding crystal line;
[0022] Matching the crystal ingot diameter change reference curve with the crystal ingot actual diameter change curve so that the actual diameter values at different growth stages correspond to the reference diameter values;
[0023] The difference between the corresponding actual diameter value and the reference diameter value is compared, and when the difference is greater than a threshold, it is determined that the crystal wire is broken.
[0024] In a second aspect, the present disclosure also provides a device for detecting a broken crystal line, including:
[0025] The laser sensor is used to detect the diameter of the crystal rod according to a predetermined detection frequency during the crystal rod growth process to obtain the actual diameter data of the crystal rod;
[0026] The controller is connected to the laser sensor and is used to determine whether the crystal wire is broken according to the actual diameter data of the crystal rod and the preset crystal rod diameter data.
[0027] Exemplarily, the laser sensor is disposed above the solid-liquid interface, and the laser sensor is configured to rotate around a first central axis so that the laser scans an area between a first position point and a second position point, wherein the first position point is the center point position of the crystal rod on the solid-liquid interface, the second position point is the positive projection position of the laser sensor on the solid-liquid interface, and the first central axis is parallel to the solid-liquid interface and perpendicular to the axial direction of the crystal rod;
[0028] The controller obtains predetermined scanning parameters when the laser sensor scans the edge of the crystal rod based on the sensing signal of the laser sensor, wherein the predetermined scanning parameters include at least one of the laser scanning angle of the laser sensor and the scanning distance of the laser sensor; and calculates the actual diameter data of the crystal rod based on the predetermined scanning parameters.
[0029] Exemplarily, the controller is specifically used for:
[0030] The actual diameter data D of the crystal rod is calculated according to the following formula:
[0031]
[0032] Wherein, H represents the height of the laser sensor relative to the solid-liquid interface in the direction perpendicular to the solid-liquid interface; α represents the laser scanning angle when the laser scans to the junction of the crystal rod and the solid-liquid interface; θ represents the laser scanning angle when the laser sensor scans to the first position point.
[0033] Exemplarily, the controller is specifically used for:
[0034] Pre-storing a crystal rod diameter change reference curve corresponding to the crystal rod at different growth stages, wherein the crystal rod diameter change reference curve includes a reference diameter value of the diameter data at the corresponding crystal line;
[0035] Generating a crystal rod actual diameter change curve according to the crystal rod actual diameter data, wherein the crystal rod actual diameter change curve includes an actual diameter value of the diameter data at a corresponding crystal line;
[0036] Matching the crystal ingot diameter change reference curve with the crystal ingot actual diameter change curve so that the actual diameter values at different growth stages correspond to the reference diameter values;
[0037] The difference between the corresponding actual diameter value and the reference diameter value is compared, and when the difference is greater than a threshold, it is determined that the crystal wire is broken.
[0038] In a third aspect, an embodiment of the present disclosure provides a crystal rod wire break detection device, the device comprising a memory and a processor, the memory being used to store an executable program, the processor being configured to run the executable program to implement the steps of the crystal rod wire break detection method as described above.
[0039] In a fourth aspect, an embodiment of the present disclosure further provides a computer-readable storage medium, on which an executable program is stored, and the executable program is executed by a processor to implement the steps of the crystal rod breakage detection method as described above.
[0040] The beneficial effects brought by the embodiments of the present disclosure are as follows:
[0041] In the above scheme, the diameter of the crystal rod is detected by a laser sensor using the laser ranging principle according to a predetermined detection frequency to obtain the actual diameter data of the crystal rod, and the actual diameter data of the crystal rod is compared with the preset crystal rod diameter data to determine whether the crystal wire is broken. In this way, the crystal wire breakage phenomenon can be discovered in time, reducing manpower consumption and avoiding the crystal rod pulled after the crystal wire breaks not meeting the product requirements, thereby avoiding production capacity and product losses. BRIEF DESCRIPTION OF THE DRAWINGS
[0042] Figure 1 A flow chart showing a method for detecting a broken crystal line provided by an embodiment of the present disclosure;
[0043] Figure 2 One of the schematic diagrams showing the principle of laser sensor detecting the diameter of the crystal rod;
[0044] Figure 3 express Figure 2 Middle E is a partial enlarged view;
[0045] Figure 4 The second schematic diagram showing the principle of laser sensor detecting the diameter of the crystal rod;
[0046] Figure 5 Schematic diagram showing the morphology of the crystal line in the shoulder release stage;
[0047] Figure 6 Schematic diagram of the crystal rod diameter curve in the shoulder release stage and the equal diameter stage;
[0048] Figure 7 A schematic diagram showing a reference curve of a change in the diameter of a crystal rod;
[0049] Figure 8 A schematic diagram showing the comparison between the actual diameter change curve of the crystal rod and the reference curve of the diameter change of the crystal rod;
[0050] Fig. 9 A schematic diagram showing a reference curve of the change in the diameter of the crystal rod during the shoulder release stage;
[0051] Fig.10 Schematic diagram showing the baseline curve of the change in crystal rod diameter at different growth stages. DETAILED DESCRIPTION
[0052] In order to make the purpose, technical solution and advantages of the embodiments of the present disclosure clearer, the technical solution of the embodiments of the present disclosure will be clearly and completely described below in conjunction with the drawings of the embodiments of the present disclosure. Obviously, the described embodiments are part of the embodiments of the present disclosure, not all of the embodiments. Based on the described embodiments of the present disclosure, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present disclosure.
[0053] Unless otherwise defined, the technical terms or scientific terms used in the present disclosure should be understood by people with ordinary skills in the field to which the present disclosure belongs. The "first", "second" and similar words used in the present disclosure do not indicate any order, quantity or importance, but are only used to distinguish different components. Similarly, similar words such as "one", "one" or "the" do not indicate quantity restrictions, but indicate that there is at least one. Similar words such as "include" or "comprise" mean that the elements or objects appearing before the word cover the elements or objects listed after the word and their equivalents, without excluding other elements or objects. Similar words such as "connect" or "connected" are not limited to physical or mechanical connections, but can include electrical connections, whether direct or indirect. "Up", "down", "left", "right" and the like are only used to indicate relative positional relationships. When the absolute position of the described object changes, the relative positional relationship may also change accordingly.
[0054] In the process of preparing single crystal silicon by Czochralski method, there are 4 crystal lines distributed at equal intervals along the circumference on the surface of the single crystal silicon rod. If dislocation or thermal stress occurs in the single crystal silicon rod, it will cause the crystal to transform from single crystal to polycrystalline growth, and the crystal lines on the surface of the single crystal silicon rod will be broken. Therefore, whether the single crystal silicon rod is single crystal silicon or polycrystalline silicon can be judged by whether there are 4 continuous crystal lines on the single crystal silicon rod.
[0055] The disclosed embodiment provides a crystal wire break detection method for detecting whether a crystal wire is broken during a Czochralski single crystal growth process.
[0056] The crystal wire protrudes on the crystal rod, and the diameter at the protruding position of the crystal wire will be larger than the diameter at other equal diameter positions. Therefore, the diameter data at the corresponding position of the crystal wire can be determined by using the diameter change on the crystal rod, and based on the diameter data at the corresponding position of the crystal wire, it can be identified whether a broken wire is found.
[0057] like Figure 1 As shown, the crystal wire break detection method provided by the embodiment of the present disclosure specifically includes the following steps:
[0058] Step S01: During the crystal rod growth process, the diameter of the crystal rod is detected by a laser sensor according to a predetermined detection frequency to obtain actual diameter data of the crystal rod;
[0059] Step S02: determining whether the crystal wire is broken according to the actual diameter data of the crystal rod and the preset diameter data of the crystal rod.
[0060] In the method provided in the embodiment of the present disclosure, a laser sensor is used to detect the diameter of the crystal rod according to the laser ranging principle at a predetermined detection frequency to obtain the actual diameter data of the crystal rod, and the actual diameter data of the crystal rod is compared with the preset crystal rod diameter data to determine whether the crystal wire is broken. In this way, the crystal wire breakage phenomenon can be discovered in time, reducing manpower consumption and avoiding the crystal rod pulled after the crystal wire is broken from not meeting the product requirements, thereby preventing production capacity and product losses.
[0061] Since the diameter of the crystal rod fluctuates during its growth and the crystal line features on the surface of the crystal rod are not obvious, if an image acquisition method is used to capture the crystal line image on the surface of the crystal rod, it will be difficult to accurately determine the crystal line feature pixel value and the plane height of the crystal line, resulting in low accuracy in the crystal line detection process and requiring complex image processing and calculation. The change in the diameter of the crystal rod cannot be intuitively obtained, and the timeliness is poor.
[0062] However, in the crystal wire break detection method provided in the embodiment of the present disclosure, the change in crystal rod diameter is detected by the laser ranging principle. Compared with the image acquisition method for detecting the change in crystal rod diameter, there is no need for complex image processing and calculation, and the diameter change data can be obtained intuitively, with high timeliness and detection accuracy.
[0063] See also Figure 2 As shown, the laser sensor 100 can emit laser light toward the edge of the crystal rod 10. Figure 3 As shown, at the location where the crystal line 11 is present, the measured diameter data is R2, and at the location where the crystal line 11 is not present, the measured diameter data is R1, and R2 is greater than R1.
[0064] Specifically, please combine Figure 4 As shown, as an exemplary embodiment, the above step S01 specifically includes:
[0065] Step S011, controlling the laser sensor 100 to rotate around the first central axis S so that the laser scans the area between the first position point A and the second position point B, wherein the first position point A is the center point position of the crystal rod 10 on the solid-liquid interface 20, the second position point B is the orthographic projection position of the laser sensor 100 on the solid-liquid interface 20, and the first central axis S is parallel to the solid-liquid interface 20 and perpendicular to the axial direction of the crystal rod 10;
[0066] Step S012: based on the sensing signal of the laser sensor 100, obtaining a predetermined scanning parameter when the laser sensor 100 scans the edge of the crystal rod 10, wherein the predetermined scanning parameter includes at least one of a laser scanning angle and a scanning distance of the laser sensor 100;
[0067] Step S013: Calculate and obtain actual diameter data of the crystal rod 10 based on the predetermined scanning parameters.
[0068] In the above scheme, the diameter of the crystal rod 10 is detected by laser scanning, and the actual diameter data of the crystal rod 10 is measured by using laser scanning parameters. Specifically, by rotating the laser sensor 100, the laser can be guided in a plane from the center point of the crystal rod 10 on the solid-liquid interface 20 (i.e., the first position point A) to the positive projection position of the laser sensor 100 on the solid-liquid interface 20 (i.e., the area of the second position point B). The plane is defined by the first position point A, the second position point B and the installation position point of the laser sensor 100.
[0069] During the laser scanning process, when the diameter of the crystal rod 10 changes, the distance between the edge of the crystal rod 10 reached by the laser and the solid-liquid plane will change accordingly.
[0070] The principle of using the laser sensor 100 to perform laser scanning to detect wafer diameter data is as follows:
[0071] It is known that the height of the laser sensor 100 at the vertical solid-liquid interface 20 is H, H=X+Y, wherein the height of the laser sensor 100 relative to the reference zero position O located above the solid-liquid interface 20 is X, Y is the liquid level height of the solid-liquid interface 20, the laser scanning angle when the laser irradiates the center point of the crystal rod 10 on the solid-liquid interface 20 (i.e., the center point of the liquid level) is θ, and the laser scanning angle when the laser scans the junction of the crystal rod 10 and the solid-liquid interface 20 is α.
[0072] Assume that: the distance from the laser sensor 100 to the center point of the crystal rod 10 on the solid-liquid interface 20 is Z1; the distance from the laser sensor 100 to the junction of the edge of the crystal rod 10 and the solid-liquid interface 20 is Z2; the diameter of the crystal rod 10 is d, then we can get:
[0073] Therefore, we can get:
[0074]
[0075] Therefore, the diameter of the crystal rod 10
[0076] Based on this, the above step S013 specifically includes:
[0077] The actual diameter data D of the crystal rod 10 is calculated according to the following formula:
[0078]
[0079] Wherein, H represents the height of the laser sensor 100 relative to the solid-liquid interface 20 in the direction perpendicular to the solid-liquid interface 20; α represents the laser scanning angle when the laser scans to the junction of the crystal rod 10 and the solid-liquid interface 20; θ represents the laser scanning angle when the laser sensor 100 scans to the first position point A.
[0080] In some exemplary embodiments, the above step S02 specifically includes:
[0081] Step S021, pre-storing a crystal rod diameter variation reference curve corresponding to the crystal rod 10 at different growth stages, wherein the crystal rod diameter variation reference curve includes a reference diameter value corresponding to the diameter data at the crystal line;
[0082] Step S022, generating a curve of actual diameter change of the crystal rod according to the actual diameter data of the crystal rod, wherein the curve of actual diameter change of the crystal rod includes an actual diameter value of the diameter data at a corresponding crystal line;
[0083] Step S023, matching the crystal ingot diameter change reference curve with the crystal ingot actual diameter change curve, so that the actual diameter values at different growth stages correspond to the reference diameter values;
[0084] Step S024, comparing the difference between the corresponding actual diameter value and the reference diameter value, and when the difference is greater than a threshold, determining that the crystal wire is broken.
[0085] As shown in the figure, for different growth stages of the crystal pulling, such as the shoulder stage and the body stage, the crystal lines of the crystal rod 10 present different shapes. Figure 5 The figure shows the crystal line morphology on the crystal rod 10 in the shoulder release stage. Therefore, in different growth stages, the diameter changes at the corresponding positions of the crystal line are also different. Figure 6 The figure shows the diameter change curve of a crystal rod at different growth stages.
[0086] Therefore, the crystal rod diameter reference curve may be a diameter variation curve including different growth stages.
[0087] See also Figure 3 As shown, in the above steps S02 and S022, since the crystal line 11 protrudes from the surface of the crystal rod 10, the diameter of the crystal rod 10 is obviously larger. Figure 7 As shown, the reference diameter value of the diameter data at the corresponding crystal line can be identified from the crystal rod diameter change reference curve, for example Figure 7 The peak data of the middle curve corresponds to the diameter data at the crystal line.
[0088] In addition, the crystal rod diameter change reference curve can be divided into multiple regions in combination with the crystal line protrusion state at different growth stages, and each region corresponds to a growth stage. Similarly, for the actual diameter change curve of the crystal rod, in different growth stages, combined with the crystal line protrusion morphology (or the diameter change trend at the crystal line) at different growth stages, different change curves will also be presented.
[0089] Therefore, in the above step S023, if Figure 8 As shown, the crystal rod diameter change reference curve can be matched with the crystal rod actual diameter change curve. Figure 8 Curve A represents the actual diameter change curve of the crystal rod, and curve B represents the reference curve of the diameter change of the crystal rod. Here, the reference curve of the diameter change of the crystal rod is matched with the actual diameter change curve of the crystal rod, specifically, according to the protrusion morphology of the crystal line at different growth stages, a series of actual diameter values detected can be classified or zoned according to different growth stages, so as to correspond the actual diameter value with the reference diameter value.
[0090] See also Figure 8 As shown, in the above step S023, the difference between the corresponding actual diameter value and the reference diameter value is compared. When the difference is greater than a threshold, it is determined that the crystal wire is broken and an alarm may be issued. Figure 8 In the figure, it can be determined that the crystal line at position C is normal, and the crystal line at position D is broken.
[0091] In addition, in some exemplary embodiments, in the above step S01, the predetermined detection frequency is set based on the rotation period of the crystal rod 10 during the growth of the crystal rod 10. Figure 6As shown, different detection frequencies can be set for different growth stages. If the difference between the corresponding actual diameter value and the reference diameter value is detected to be greater than a threshold value during a rotation cycle of the crystal rod 10, it is determined that the crystal line is discontinuous and a wire break occurs. Exemplarily, there are four crystal lines distributed on the circumference of the crystal rod 10, and the detection frequency can be set to 1 / 4 of the rotation cycle of the crystal rod 10.
[0092] In addition, the embodiment of the present disclosure further provides a device for detecting a broken crystal line, including:
[0093] The laser sensor 100 is used to detect the diameter of the crystal rod 10 according to a predetermined detection frequency during the growth process of the crystal rod 10 to obtain actual diameter data of the crystal rod;
[0094] The controller is connected to the laser sensor 100 and is used to determine whether the crystal wire is broken according to the actual diameter data of the crystal rod and the preset crystal rod diameter data.
[0095] Exemplarily, the laser sensor 100 is disposed above the solid-liquid interface 20, and the laser sensor 100 is configured to be rotatable around a first central axis S, so that the laser scans the area between a first position point A and a second position point B, wherein the first position point A is the center point position of the crystal rod 10 on the solid-liquid interface 20, the second position point B is the orthographic projection position of the laser sensor 100 on the solid-liquid interface 20, and the first central axis S is parallel to the solid-liquid interface 20 and perpendicular to the axial direction of the crystal rod 10;
[0096] The controller obtains predetermined scanning parameters when the laser sensor 100 scans the edge of the crystal rod 10 based on the sensing signal of the laser sensor 100, wherein the predetermined scanning parameters include at least one of the laser scanning angle of the laser sensor 100 and the scanning distance of the laser sensor 100; and calculates the actual diameter data of the crystal rod 10 based on the predetermined scanning parameters.
[0097] In the above scheme, the diameter of the crystal rod 10 is detected by laser scanning, and the actual diameter data of the crystal rod 10 is measured by using laser scanning parameters. Specifically, by rotating the laser sensor 100, the laser can be guided in a plane from the center point of the crystal rod 10 on the solid-liquid interface 20 (i.e., the first position point A) to the positive projection position of the laser sensor 100 on the solid-liquid interface 20 (i.e., the area of the second position point B). The plane is defined by the first position point A, the second position point B and the installation position point of the laser sensor 100.
[0098] During the laser scanning process, when the diameter of the crystal rod 10 changes, the distance between the edge of the crystal rod 10 reached by the laser and the solid-liquid plane will change accordingly.
[0099] The principle of using the laser sensor 100 to perform laser scanning to detect wafer diameter data is as follows:
[0100] It is known that the height of the laser sensor 100 at the vertical solid-liquid interface 20 is H, H=X+Y, wherein the height of the laser sensor 100 relative to the reference zero position O located above the solid-liquid interface 20 is X, Y is the liquid level height of the solid-liquid interface 20, the laser scanning angle when the laser irradiates the center point of the crystal rod 10 on the solid-liquid interface 20 (i.e., the center point of the liquid level) is θ, and the laser scanning angle when the laser scans the junction of the crystal rod 10 and the solid-liquid interface 20 is α.
[0101] Assume that: the distance from the laser sensor 100 to the center point of the crystal rod 10 on the solid-liquid interface 20 is Z1; the distance from the laser sensor 100 to the junction of the edge of the crystal rod 10 and the solid-liquid interface 20 is Z2; the diameter of the crystal rod 10 is d, then we can get:
[0102] Therefore, we can get:
[0103]
[0104] Therefore, the diameter of the crystal rod 10
[0105] Based on this, illustratively, the controller is specifically used for:
[0106] The actual diameter data D of the crystal rod 10 is calculated according to the following formula:
[0107]
[0108] Wherein, H represents the height of the laser sensor 100 relative to the solid-liquid interface 20 in the direction perpendicular to the solid-liquid interface 20; α represents the laser scanning angle when the laser scans to the junction of the crystal rod 10 and the solid-liquid interface 20; θ represents the laser scanning angle when the laser sensor 100 scans to the first position point A.
[0109] Exemplarily, the controller is specifically used for:
[0110] Pre-storing a crystal rod diameter variation reference curve corresponding to the crystal rod 10 at different growth stages, wherein the crystal rod diameter variation reference curve includes a reference diameter value corresponding to the diameter data at the crystal line;
[0111] Generating a crystal rod actual diameter change curve according to the crystal rod actual diameter data, wherein the crystal rod actual diameter change curve includes an actual diameter value of the diameter data at a corresponding crystal line;
[0112] Matching the crystal ingot diameter change reference curve with the crystal ingot actual diameter change curve so that the actual diameter values at different growth stages correspond to the reference diameter values;
[0113] The difference between the corresponding actual diameter value and the reference diameter value is compared, and when the difference is greater than a threshold, it is determined that the crystal wire is broken.
[0114] At different growth stages of the crystal pulling process, such as the shoulder stage and the body stage, the crystal lines of the crystal ingot 10 present different shapes. For example, Figure 5 The figure shows the crystal line morphology on the crystal rod 10 in the shoulder release stage. In different growth stages, the diameter changes at the corresponding positions of the crystal line 11 are also different. Fig.10 The figure shows a diameter variation curve of a crystal rod at different growth stages. Therefore, the crystal rod diameter reference curve may be a diameter variation curve including different growth stages.
[0115] See also Figure 3 As shown, in the above steps S02 and S022, since the crystal line 11 protrudes from the surface of the crystal rod 10, the diameter of the crystal rod 10 is obviously larger. Figure 7 As shown, the reference diameter value of the diameter data at the corresponding crystal line can be identified from the crystal rod diameter change reference curve, for example Figure 7 The peak data of the middle curve corresponds to the diameter data at the crystal line.
[0116] Moreover, in combination with the crystal line protrusion state at different growth stages, the crystal rod diameter change reference curve can be divided into multiple regions, each region corresponding to a growth stage. Similarly, for the actual diameter change curve of the crystal rod, in different growth stages, in combination with the crystal line protrusion morphology at different growth stages (or, the diameter change trend at the crystal line), different change curves will also be presented. Figure 7 and Fig. 9 As shown, at different growth stages, the rotation period of the crystal rod 10 may be the same or different, and the corresponding crystal rod diameter variation curves may be different.
[0117] In the above step S023, if Figure 8 As shown, the crystal rod diameter change reference curve can be matched with the crystal rod actual diameter change curve. Figure 8Curve A represents the actual diameter change curve of the crystal rod, and curve B represents the reference curve of the diameter change of the crystal rod. Here, the reference curve of the diameter change of the crystal rod is matched with the actual diameter change curve of the crystal rod, specifically, according to the protrusion morphology of the crystal line at different growth stages, a series of actual diameter values detected can be classified or zoned according to different growth stages, so as to correspond the actual diameter value with the reference diameter value.
[0118] See also Figure 8 As shown, in the above step S023, the difference between the corresponding actual diameter value and the reference diameter value is compared. When the difference is greater than a threshold, it is determined that the crystal wire is broken and an alarm may be issued. Figure 8 In the figure, it can be determined that the crystal line at position C is normal, and the crystal line at position D is broken.
[0119] In addition, in some exemplary embodiments, the controller is further configured to set the predetermined detection frequency based on a rotation period of the crystal rod 10 during the growth of the crystal rod 10. Figure 6 As shown, different detection frequencies can be set for different growth stages. If the difference between the corresponding actual diameter value and the reference diameter value is detected to be greater than a threshold value during a rotation cycle of the crystal rod 10, it is determined that the crystal line is discontinuous and a wire break occurs. Exemplarily, there are four crystal lines distributed on the circumference of the crystal rod 10, and the detection frequency can be set to 1 / 4 of the rotation cycle of the crystal rod 10.
[0120] In addition, an embodiment of the present disclosure provides a crystal rod break detection device, which includes a memory and a processor, the memory is used to store an executable program, and the processor is configured to run the executable program to implement the steps of the crystal rod break detection method as described above.
[0121] In addition, an embodiment of the present disclosure further provides a computer-readable storage medium, on which an executable program is stored, and the executable program is executed by a processor to implement the steps of the crystal rod breakage detection method as described above.
[0122] The computer readable storage medium can implement the steps in the above-mentioned method embodiments when the computer program stored in its memory is executed by the processor. Similarly, the crystal wire break phenomenon can be detected timely and accurately.
[0123] Those of ordinary skill in the art can understand that all or part of the processes in the above-mentioned embodiment methods can be completed by instructing the relevant hardware through a computer program, and the computer program can be stored in a non-volatile computer-readable storage medium. When the computer program is executed, it can include the processes of the embodiments of the above-mentioned methods. Among them, any reference to memory, storage, database or other media used in the embodiments provided in this application can include at least one of non-volatile and volatile memory. Non-volatile memory can include read-only memory (ROM), magnetic tape, floppy disk, flash memory or optical memory, etc. Volatile memory can include random access memory (RAM) or external cache memory. As an illustration and not limitation, RAM can be in various forms, such as static random access memory (SRAM) or dynamic random access memory (DRAM).
[0124] There are a few points to note:
[0125] (1) The drawings of the embodiments of the present disclosure only relate to the structures related to the embodiments of the present disclosure, and other structures may refer to the general design.
[0126] (2) For the sake of clarity, in the drawings used to describe the embodiments of the present disclosure, the thickness of layers or regions is exaggerated or reduced, that is, these drawings are not drawn according to the actual scale. It is understood that when an element such as a layer, film, region or substrate is referred to as being "on" or "under" another element, the element may be "directly" "on" or "under" the other element or there may be intermediate elements.
[0127] (3) In the absence of conflict, the embodiments of the present disclosure and the features therein may be combined with each other to obtain new embodiments.
[0128] The above are only specific implementations of the present disclosure, but the protection scope of the present disclosure is not limited thereto, and the protection scope of the present disclosure shall be based on the protection scope of the claims.
Claims
1. A method for detecting a broken crystal line, characterized in that: include: During the crystal rod growth process, the diameter of the crystal rod is detected by a laser sensor according to a predetermined detection frequency to obtain the actual diameter data of the crystal rod; Whether the crystal wire is broken is determined according to the actual diameter data of the crystal rod and the preset diameter data of the crystal rod.
2. The method for detecting a broken crystal line according to claim 1, characterized in that: The method of detecting the diameter of the crystal rod by using a laser sensor to obtain actual diameter data of the crystal rod specifically includes: Controlling the laser sensor to rotate around a first central axis so that the laser scans an area between a first position point and a second position point, wherein the first position point is a central point position of the crystal rod on a solid-liquid interface, the second position point is a positive projection position of the laser sensor on the solid-liquid interface, and the first central axis is parallel to the solid-liquid interface and perpendicular to the axial direction of the crystal rod; Based on the sensing signal of the laser sensor, a predetermined scanning parameter when the laser sensor scans the edge of the crystal rod is acquired, wherein the predetermined scanning parameter includes at least one of a laser scanning angle of the laser sensor and a scanning distance of the laser sensor; Based on the predetermined scanning parameters, actual diameter data of the crystal rod is calculated.
3. The method for detecting a broken crystal line according to claim 2, characterized in that: The calculating and obtaining the actual diameter data of the crystal rod based on the predetermined scanning parameters specifically includes: The actual diameter data D of the crystal rod is calculated according to the following formula: Wherein, H represents the height of the laser sensor relative to the solid-liquid interface in the direction perpendicular to the solid-liquid interface; α represents the laser scanning angle when the laser scans to the junction of the crystal rod and the solid-liquid interface; θ represents the laser scanning angle when the laser sensor scans to the first position point.
4. The method for detecting a broken crystal line according to claim 1, characterized in that: At different growth stages of the crystal rod, the diameter of the crystal rod is detected by a laser sensor according to a predetermined detection frequency to obtain actual diameter data of the crystal rod, specifically including: The predetermined detection frequency is set based on the rotation period of the crystal rod during the crystal rod growth process.
5. The method for detecting a broken crystal line according to claim 1, characterized in that: The step of determining whether the crystal wire is broken according to the actual diameter data of the crystal rod and the preset diameter data of the crystal rod specifically includes: Pre-storing a crystal rod diameter change reference curve corresponding to the crystal rod at different growth stages, wherein the crystal rod diameter change reference curve includes a reference diameter value of the diameter data at the corresponding crystal line; Generating a crystal rod actual diameter change curve according to the crystal rod actual diameter data, wherein the crystal rod actual diameter change curve includes an actual diameter value of the diameter data at a corresponding crystal line; Matching the crystal ingot diameter change reference curve with the crystal ingot actual diameter change curve so that the actual diameter values at different growth stages correspond to the reference diameter values; The difference between the corresponding actual diameter value and the reference diameter value is compared, and when the difference is greater than a threshold, it is determined that the crystal wire is broken.
6. A crystal wire break detection device, characterized in that: include: The laser sensor is used to detect the diameter of the crystal rod according to a predetermined detection frequency during the crystal rod growth process to obtain the actual diameter data of the crystal rod; The controller is connected to the laser sensor and is used to determine whether the crystal wire is broken according to the actual diameter data of the crystal rod and the preset crystal rod diameter data.
7. The crystal wire breakage detection device according to claim 6, characterized in that: The laser sensor is disposed above the solid-liquid interface, and the laser sensor is configured to be rotatable around a first central axis so that the laser scans an area between a first position point and a second position point, wherein the first position point is the center point position of the crystal rod on the solid-liquid interface, the second position point is the orthographic projection position of the laser sensor on the solid-liquid interface, and the first central axis is parallel to the solid-liquid interface and perpendicular to the axial direction of the crystal rod; The controller obtains predetermined scanning parameters when the laser sensor scans the edge of the crystal rod based on the sensing signal of the laser sensor, wherein the predetermined scanning parameters include at least one of the laser scanning angle of the laser sensor and the scanning distance of the laser sensor; and calculates the actual diameter data of the crystal rod based on the predetermined scanning parameters.
8. The crystal wire breakage detection device according to claim 7, characterized in that: The controller is specifically used for: The actual diameter data D of the crystal rod is calculated according to the following formula: Wherein, H represents the height of the laser sensor relative to the solid-liquid interface in the direction perpendicular to the solid-liquid interface; α represents the laser scanning angle when the laser scans to the junction of the crystal rod and the solid-liquid interface; θ represents the laser scanning angle when the laser sensor scans to the first position point.
9. The crystal wire breakage detection device according to claim 6, characterized in that: The controller is specifically used for: Pre-storing a crystal rod diameter change reference curve corresponding to the crystal rod at different growth stages, wherein the crystal rod diameter change reference curve includes a reference diameter value of the diameter data at the corresponding crystal line; Generating a crystal rod actual diameter change curve according to the crystal rod actual diameter data, wherein the crystal rod actual diameter change curve includes an actual diameter value of the diameter data at a corresponding crystal line; Matching the crystal ingot diameter change reference curve with the crystal ingot actual diameter change curve so that the actual diameter values at different growth stages correspond to the reference diameter values; The difference between the corresponding actual diameter value and the reference diameter value is compared, and when the difference is greater than a threshold, it is determined that the crystal wire is broken.
10. A crystal bar breakage detection device, characterized in that: The device includes a memory and a processor, the memory is used to store an executable program, and the processor is configured to run the executable program to implement the steps of the crystal ingot breakage detection method according to any one of claims 1 to 5.
11. A computer-readable storage medium, characterized in that: The computer-readable storage medium stores an executable program, and the executable program is executed by a processor to implement the steps of the crystal ingot breakage detection method according to any one of claims 1 to 5.