Dimming conductive film and preparation method thereof
By adding the first AZO layer as the seed layer of the Ag alloy layer in the conductive dimming film of the panoramic thermally color-changing skylight, and introducing the Ag alloy layer and the metal barrier layer, the haze of the conductive dimming film in the prior art is solved. The problems of high, high square resistance and poor thermal insulation performance achieve better thermal insulation performance and durability, and reduce manufacturing costs.
Patent Information
- Application Number
- CN202411716210.0
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-11-27
- Publication Date
- 2025-02-18
AI Technical Summary
When the conductive dimming film in the existing panoramic thermally discolored sky curtain reaches ultra-low square resistance, the film thickness is large, the haze is high, the heat insulation performance and ring resistance of the metal layer are poor. .
By adding a first AZO layer to the first ITO layer, it serves as a seed layer of the Ag alloy layer, so that the Ag alloy layer is more uniform and weather-resistant. At the same time, the introduction of the Ag alloy layer improves the thermal insulation performance and the metal barrier layer avoids oxidation of the Ag alloy layer.
It improves the thermal insulation performance and durability of the dimming conductive film, reduces manufacturing costs, solves the problems of high haze and high square resistance, and integrates heat insulation and dimming.
Smart Images
Figure CN119472122A_ABST
Abstract
Description
Technical Field
[0001] The present invention belongs to the technical field of film materials, and in particular relates to a light-adjusting conductive film and a preparation method thereof. Background Art
[0002] With the development of intelligent and electrified cars, the intelligent configuration experience in different scenarios has become the main focus of many consumers. The ultraviolet isolation rate of the panoramic heat-insulating color-changing skylight reaches more than 90%, and it has the characteristics of low thermal radiation and low transparency. At the same time, the light and dark of the skylight are adjustable through electrochromic technology. The panoramic heat-insulating color-changing skylight can take into account both heat insulation and light and dark adjustment.
[0003] The panoramic heat-insulating color-changing skylight adopts a sandwich structure. The upper silver-coated glass is responsible for reflecting the radiation outside the car, the middle electrochromic layer is responsible for adjusting the brightness, and the lower Low-E coating is responsible for the insulation inside the car. Electrochromism refers to the optical properties of materials, such as reflectivity, transmittance, absorptivity, etc., which can undergo stable and reversible color changes under the action of an external electric field, and appear as a reversible change in transparency. The panoramic heat-insulating color-changing skylight also has a low operating voltage of less than 1.5V, which is more energy-efficient than the 45V-120V voltage of other materials and greatly improves safety. Due to the low working driving voltage, the electrochromic electrode also requires a relatively low impedance. In order to have a better experience, the display of the exterior scene in the transparent state is also very high, and the thermal insulation performance, haze performance, and transmittance performance of the material are all relatively high.
[0004] The conductive dimming film in the existing panoramic heat-insulating color-changing skylight needs to achieve ultra-low square resistance, which will cause problems such as large film thickness, high haze, and no heat insulation. It is necessary to block UV and IR in the glue of the assembly or on the glass, and the manufacturing cost is very high. The metal layer with Cu and Al added in the existing dimming conductive film has poor thermal insulation and environmental test resistance. The metal layer with Ag added will cause the Ag layer to be discontinuous due to the stacking of Ag and ITO layers (with relatively large roughness), which will affect the performance of the product, poor environmental test resistance, and high haze. In addition, the oxidation problem of the Ag layer cannot be controlled during the coating process of the existing conductive dimming film, which will affect the stability of the product.
[0005] The information disclosed in this background technology section is only intended to enhance the understanding of the overall background of the invention and should not be regarded as an acknowledgment or any form of suggestion that the information constitutes the prior art already known to a person skilled in the art. Summary of the invention
[0006] The object of the present invention is to provide a dimming conductive film, the Ag alloy layer of which is more uniform and less prone to oxidation, has improved weather resistance, better heat resistance and lower cost.
[0007] In order to achieve the above-mentioned purpose, a technical solution provided by a specific embodiment of the present invention is as follows: a dimming conductive film, comprising: a substrate layer, a low-refractive resin layer, a high-refractive resin layer, a silicon oxide layer, a first ITO layer, a first AZO layer, an Ag alloy layer, a metal barrier layer and a second ITO layer. The substrate layer has a low-refractive pre-coating surface and a high-refractive pre-coating surface that are relatively arranged; the low-refractive resin layer is coated on the low-refractive pre-coating surface; the high-refractive resin layer is coated on the high-refractive pre-coating surface; the silicon oxide layer is magnetron sputtered on the surface of the high-refractive resin layer; the first ITO layer is magnetron sputtered on the surface of the silicon oxide layer; the first AZO layer is magnetron sputtered on the surface of the first ITO layer; the Ag alloy layer is magnetron sputtered on the surface of the first AZO layer; the metal barrier layer is magnetron sputtered on the surface of the Ag alloy layer; and the second ITO layer is magnetron sputtered on the surface of the barrier layer.
[0008] In one or more embodiments of the present invention, the thickness of the low-refractive resin layer is between 0.8 μm and 1 μm; and / or the refractive index of the low-refractive resin layer is between 1.5nd and 1.55nd.
[0009] In one or more embodiments of the present invention, the thickness of the high-refractive resin layer is between 0.8 μm and 1.2 μm; and / or the refractive index of the high-refractive resin layer is between 1.62nd and 1.68nd; and / or the roughness Ra of the high-refractive resin layer is between 2nm and 5nm.
[0010] In one or more embodiments of the present invention, the thickness of the silicon oxide layer is between 15 nm and 20 nm.
[0011] In one or more embodiments of the present invention, the thickness of the first ITO layer is between 30nm-40nm; and / or, the mass ratio of indium oxide and tin oxide in the first ITO layer is between (90-95):(10-5); and / or, the surface roughness Ra of the first ITO layer is between 2nm-5nm.
[0012] In one or more embodiments of the present invention, the thickness of the first AZO layer is between 10nm-20nm; and / or, the mass ratio of aluminum oxide to zinc oxide in the first AZO layer is between (0-5):(100-95); and / or, the surface roughness Ra of the first AZO layer is between 0.5nm-1.5nm.
[0013] In one or more embodiments of the present invention, the thickness of the Ag alloy layer is between 10nm and 20nm; and / or the Ag alloy layer is selected from multiple precious metals such as Ag, Au, Pd, etc.; and / or the mass of Ag in the Ag alloy layer accounts for 95%-99% of the total mass of the Ag alloy layer, and the mass of other metals accounts for 1%-5% of the total mass of the Ag alloy layer.
[0014] In one or more embodiments of the present invention, the metal barrier layer is selected from one of an AZO layer, a SNO layer and a ZNO layer; and / or, the thickness of the metal barrier layer is between 1 nm and 2 nm.
[0015] In one or more embodiments of the present invention, the thickness of the second ITO layer is between 30 nm and 40 nm; and / or, the mass ratio of indium oxide to tin oxide in the second ITO layer is between (90-95):(10-5).
[0016] Compared with the prior art, the dimming conductive film of the present invention adds a first AZO layer on the first ITO layer, so that the surface of the first ITO layer is smoother, so that it can be used as a seed layer for the Ag alloy layer, thereby making the Ag alloy layer more uniform and improving weather resistance. At the same time, the introduction of the Ag alloy layer can improve the heat insulation performance of the dimming conductive film, and the process is simple, reducing the manufacturing cost. In addition, controlling the surface roughness of the first ITO layer can reduce the haze of the dimming conductive film. The metal barrier layer can prevent the Ag alloy layer from oxidizing during use, thereby improving its durability. The dimming conductive film solves the problems of high haze and high square resistance in the prior art through the arrangement of the above-mentioned layer structure, and improves the durability of the Ag alloy layer and the ITO layer, integrating heat insulation and dimming, and reducing the manufacturing cost of automobile skylight glass.
[0017] Another specific embodiment of the present invention provides a technical solution as follows: A method for preparing a light-adjusting conductive film, comprising: providing a substrate layer, wherein the substrate layer has a low-refractive pre-coating surface and a high-refractive pre-coating surface that are relatively arranged; coating the low-refractive pre-coating surface with acrylic resin to form a low-refractive resin layer, and coating the high-refractive pre-coating surface with acrylic resin to form a high-refractive resin layer; introducing oxygen and argon gas, bombarding a silicon target with argon gas to form a silicon oxide layer by magnetron sputtering on the surface of the high-refractive resin layer; introducing oxygen and argon gas, bombarding an indium tin oxide target with argon gas to form a silicon oxide layer on the surface of the silicon oxide layer The first ITO layer is formed by magnetron sputtering on the surface of the first ITO layer; oxygen and argon are introduced, and the argon gas is used to bombard the zinc oxide aluminum target to form a first AZO layer on the surface of the first ITO layer; in an oxygen-free environment, the argon gas is used to bombard the Ag alloy target to form an Ag alloy layer on the surface of the first AZO layer by magnetron sputtering; in an oxygen-free environment, the argon gas is used to bombard the metal target to form a metal barrier layer on the surface of the Ag alloy layer by magnetron sputtering; oxygen and argon are introduced, and the argon gas is used to bombard the indium tin oxide target to form a second ITO layer on the surface of the barrier layer.
[0018] Compared with the prior art, the preparation method of the light-adjusting conductive film of the present invention does not require oxygen to be introduced when preparing the Ag alloy layer, thereby avoiding the problem of failure of the light-adjusting conductive film caused by oxidation during the sputtering of the Ag alloy layer. The preparation method improves the adhesion of the Ag alloy layer and the ITO layer by first preparing the first AZO layer, thereby improving the durability of the ITO layer. BRIEF DESCRIPTION OF THE DRAWINGS
[0019] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments recorded in the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.
[0020] Figure 1 is a schematic diagram of a light-adjusting conductive film according to an embodiment of the present invention;
[0021] Figure 2 is a UV-IR curve diagram of the light-adjusting conductive film of Example 1 of the present invention;
[0022] Figure 3 It is a UV-IR curve diagram of the light-adjusting conductive film of Comparative Example 1 of the present invention;
[0023] Figure 4 It is a UV-IR curve diagram of the light-adjusting conductive film of Comparative Example 2 of the present invention;
[0024] Figure 5 It is a UV-IR curve diagram of the light-adjusting conductive film of Comparative Example 3 of the present invention;
[0025] Figure 6 It is a UV-IR curve diagram of the light-adjusting conductive film of Comparative Example 4 of the present invention.
[0026] Description of main reference numerals:
[0027] 1- low-refractive resin layer, 2- substrate layer, 3- high-refractive resin layer, 4- silicon oxide layer, 5- first ITO layer, 6- first AZO layer, 7- Ag alloy layer, 8- metal barrier layer, 9- second ITO layer. DETAILED DESCRIPTION
[0028] In order to enable those skilled in the art to better understand the technical solutions in the present invention, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work should fall within the scope of protection of the present invention.
[0029] like Figure 1 As shown, a dimming conductive film in one embodiment of the present invention includes a substrate layer 2, a low-refractive resin layer 1, a high-refractive resin layer 3, a silicon oxide layer 4, a first ITO layer 5, a first AZO layer 6, an Ag alloy layer 7, a metal barrier layer 8 and a second ITO layer 9. The substrate layer 2 has a low-refractive pre-coating surface and a high-refractive pre-coating surface that are relatively arranged; the low-refractive resin layer 1 is coated on the low-refractive pre-coating surface. The high-refractive resin layer 3 is coated on the high-refractive pre-coating surface. The silicon oxide layer 4 is magnetron sputtered on the surface of the high-refractive resin layer 3. The first ITO layer 5 is magnetron sputtered on the surface of the silicon oxide layer 4. The first AZO layer 6 is magnetron sputtered on the surface of the first ITO layer 5. The Ag alloy layer 7 is magnetron sputtered on the surface of the first AZO layer 6. The metal barrier layer 8 is magnetron sputtered on the surface of the Ag alloy layer 7. The second ITO layer 9 is magnetron sputtered on the surface of the metal barrier layer 8.
[0030] In the above embodiment, the dimming conductive film of the present invention adds the first AZO layer 6 on the first ITO layer 5, so that the surface of the first ITO layer 5 is smoother, so that it can be used as a seed layer of the Ag alloy layer 7, thereby making the Ag alloy layer 7 more uniform and improving weather resistance. At the same time, the introduction of the Ag alloy layer 7 can improve the thermal insulation performance of the dimming conductive film, and the process is simple, reducing the manufacturing cost.
[0031] In one embodiment, the thickness of the substrate layer 2 is between 20 μm and 200 μm. The substrate layer 2 may be a transparent substrate. Preferably, the substrate layer 2 may be a PET substrate layer 2. The two surfaces of the substrate layer 2 are respectively configured as a low-fold pre-coating surface and a high-fold pre-coating surface. The haze of the two pre-coating surfaces is controlled to be about 1.2%.
[0032] The low-refractive resin layer 1 is coated on the low-refractive pre-coated surface. The low-refractive resin layer 1 may include acrylic resin, silicon dioxide and organic particles. The thickness of the low-refractive resin layer 1 is between 0.8 μm and 1 μm. The refractive index of the low-refractive resin layer 1 is between 1.5nd and 1.55nd. The viscosity of the low-refractive resin layer 1 is low, which is convenient for winding the film material.
[0033] The high-refractive resin layer 3 is coated on the high-refractive pre-coated surface. The high-refractive resin layer 3 may include acrylic resin, titanium oxide and aluminum oxide particles, etc. The thickness of the high-refractive resin layer 3 is between 0.8 μm and 1.2 μm. The refractive index of the high-refractive resin layer 3 is between 1.62nd and 1.68nd. Furthermore, the roughness Ra of the high-refractive resin layer 3 is between 2nm and 5nm. The high-refractive resin layer 3 can be used as a hardening layer to improve the hardness of the dimming conductive film.
[0034] In one embodiment, a silicon oxide layer 4 is magnetron sputtered on the high-refractive resin layer 3 , and the thickness of the silicon oxide layer 4 is between 15 nm and 20 nm, and is used to cooperate with other film layers for optical matching and to improve the mechanical properties of the light-adjusting conductive film.
[0035] The surface of the silicon oxide layer 4 is magnetron sputtered with a first ITO layer 5. In one embodiment, the thickness of the first ITO layer 5 is between 30nm and 40nm. The mass ratio of indium oxide to tin oxide in the first ITO layer 5 is between (90-95): (10-5). The first ITO layer 5 can provide a better conductive performance for the dimming conductive film. Furthermore, the surface roughness Ra of the first ITO layer 5 is between 2nm and 5nm, which can improve the adhesion between the first ITO layer 5 and the subsequent film layer.
[0036] The first AZO layer 6 is magnetron sputtered on the surface of the first ITO layer 5. The surface of the first AZO layer 6 is magnetron sputtered with an Ag alloy layer 7. The thickness of the first AZO layer 6 is between 10nm and 20nm. The mass ratio of aluminum oxide to zinc oxide in the first AZO layer 6 is between (0-5): (100-95). The surface roughness Ra of the first AZO layer 6 is between 0.5nm and 1.5nm. The first AZO layer 6 can serve as a seed layer for the Ag alloy layer 7, providing a flatter coating surface for the Ag alloy layer 7, thereby improving the relevant performance of the Ag alloy layer 7.
[0037] The thickness of the Ag alloy layer 7 is between 10nm and 20nm. The Ag alloy layer 7 is selected from a plurality of precious metals such as Ag, Au, and Pd. Preferably, the mass of Ag in the Ag alloy layer 7 accounts for 95% to 99% of the total mass of the Ag alloy layer 7, and the mass of other metals accounts for 1% to 5% of the total mass of the Ag alloy layer 7. The Ag alloy layer 7 can improve the conductive properties and diaphragm properties of the dimming conductive film.
[0038] The surface of the Ag alloy layer 7 is magnetron sputtered to form a metal barrier layer 8 for preventing the Ag alloy layer 7 from being oxidized. The metal barrier layer 8 is selected from one of an AZO layer (indium tin oxide), a SNO layer (tin oxide) and a ZNO layer (zinc oxide). The thickness of the metal barrier layer 8 is between 1 nm and 2 nm. Preferably, the metal barrier layer 8 is an AZO layer. The metal barrier layer 8 can prevent the Ag alloy layer 7 from being oxidized during use and magnetron sputtering, thereby causing functional failure.
[0039] In one embodiment, the surface of the metal barrier layer 8 is magnetron sputtered with a second ITO layer 9. The thickness of the second ITO layer 9 is between 30 nm and 40 nm. The mass ratio of indium oxide to tin oxide in the second ITO layer 9 is between (90-95): (10-5). The second ITO layer 9 can provide conductive properties and optical properties for the dimming conductive film.
[0040] A method for preparing a light-adjusting conductive film in another embodiment of the present invention includes steps S1 to S8.
[0041] Step S1: providing a substrate layer, wherein the substrate layer has a low-fold pre-coating surface and a high-fold pre-coating surface that are relatively arranged.
[0042] Specifically, in step S1, the two surfaces of the substrate layer are respectively configured as a low-fold pre-coating surface and a high-fold pre-coating surface, and the haze of the two pre-coating surfaces is controlled to be about 1.2%.
[0043] Step S2: coating the low-refractive pre-coated surface of the substrate layer with acrylic resin to form a low-refractive resin layer, and coating the high-refractive pre-coated surface with acrylic resin to form a high-refractive resin layer.
[0044] Specifically, in step S2, an acrylic resin containing silica particles and organic particles is coated on the low-refractive pre-coated surface of the substrate layer to form a low-refractive resin layer. An acrylic resin containing titanium oxide, aluminum oxide particles, etc. is coated on the high-refractive pre-coated surface to form a high-refractive resin layer. The thickness of the low-refractive resin layer is between 0.8 μm and 1 μm. The refractive index of the low-refractive resin layer is between 1.5nd and 1.55nd. The thickness of the high-refractive resin layer is between 0.8 μm and 1-1.2 μm. The refractive index of the high-refractive resin layer is between 1.62nd and 1.68nd. The roughness Ra of the high-refractive resin layer is between 2nm and 5nm.
[0045] Step S3: introducing oxygen and argon gas, bombarding the silicon target with argon gas to form a silicon oxide layer on the surface of the high-refractive resin layer by magnetron sputtering.
[0046] Specifically, in step S3, argon gas is used to bombard a silicon target with a purity of 5N, and a silicon oxide layer with a thickness of 15nm-20nm is formed on the surface of the high-refractive resin layer by magnetron sputtering at a speed of 2.0m / min-2.5m / min and a medium-frequency coating power of 8kw-10kw. Among them, the introduction rate of argon gas is controlled at 200sccm-300sccm and used as a bombardment gas. Oxygen is controlled by PID, with a voltage ratio of 80-90% and a frequency of 40khz.
[0047] Step S4: introducing oxygen and argon gas, bombarding an indium tin oxide target with argon gas to form a first ITO layer on the surface of the silicon oxide layer by magnetron sputtering.
[0048] Specifically, in step S4, argon gas is introduced at a rate of 200sccm-300sccm, oxygen gas is introduced at a flow rate of 10sccm-15sccm, and argon gas bombards the indium tin oxide target at a speed of 2.0m / min-2.5m / min and a DC power of 10kw-12kw, and magnetron sputtering is performed on the surface of the silicon oxide layer to form a first ITO layer with a thickness of 30nm-40nm and a roughness Ra between 2nm-5nm. The mass ratio of indium oxide to tin oxide in the first ITO layer is between (90-95):(10-5).
[0049] Step S5: introducing oxygen and argon gas, bombarding the zinc oxide aluminum target with argon gas to form a first AZO layer on the surface of the first ITO layer by magnetron sputtering.
[0050] Specifically, in step S5, argon gas is introduced at a rate of 200sccm-300sccm, oxygen gas is introduced at a rate of 20sccm-30sccm, and argon gas bombards the zinc oxide aluminum target at a speed of 2.0m / min-2.5m / min and a DC power of 12kw-15kw, and magnetron sputtering is performed on the surface of the first ITO layer to form a first AZO layer with a thickness of 10nm-20nm and a surface roughness Ra of 0.5nm-1.5nm. The mass ratio of aluminum oxide to zinc oxide in the first AZO layer is between (0-5): (100-95).
[0051] Step S6: In an oxygen-free environment, using argon gas to bombard an Ag alloy target to form an Ag alloy layer on the surface of the first AZO layer by magnetron sputtering.
[0052] Specifically, in step S6, in an oxygen-free environment, argon gas is introduced at a rate of 100sccm-200sccm and bombarded with an Ag alloy target at a speed of 2.0m / min-2.5m / min and a DC power of 4kw-7kw to form an Ag alloy layer with a thickness of 10nm-20nm on the surface of the first AZO layer by magnetron sputtering. The Ag alloy layer is selected from a plurality of precious metals such as Ag, Au, and Pd. The mass of Ag in the Ag alloy layer accounts for 95%-99% of the total mass of the Ag alloy layer, and the mass of other metals accounts for 1%-5% of the total mass of the Ag alloy layer.
[0053] Step S7: in an oxygen-free environment, using argon gas to bombard a metal target material to form a metal barrier layer on the surface of the Ag alloy layer by magnetron sputtering;
[0054] Specifically, in step S7, in an oxygen-free environment, argon gas is introduced at a rate of 100 sccm-200 sccm to bombard the metal target, and a metal barrier layer with a thickness of 1 nm-2 nm is formed on the surface of the Ag alloy layer by magnetron sputtering at a speed of 2.0 m / min-2.5 m / min and a DC power of 1 kW-2 kW. The metal barrier layer is selected from one of an AZO layer, a SNO layer and a ZNO layer.
[0055] Step S8: introducing oxygen and argon gas, and using argon gas to bombard the indium tin oxide target to form a second ITO layer on the surface of the barrier layer.
[0056] Specifically, in step S8, argon gas is introduced at a rate of 200sccm-300sccm, oxygen gas is introduced at a rate of 10sccm-15sccm, and argon gas bombards the indium tin oxide target at a speed of 2.0m / min-2.5m / min and a DC power of 10kw-12kw to form a second ITO layer with a thickness of 30nm-40nm on the surface of the barrier layer. The mass ratio of indium oxide to tin oxide in the second ITO layer is between (90-95):(10-5).
[0057] The present invention is further described below in conjunction with specific embodiments and comparative examples.
[0058] Example 1
[0059] Structure: from bottom to top: low-refractive resin layer 1: 0.9μm; substrate layer 2: 100μm; high-refractive resin layer 3: 1μm; first ITO layer 5: 40nm; first AZO layer 6: 20nm; Ag alloy layer 7: 15nm; metal barrier layer (AZO): 1nm; second ITO layer: 40nm.
[0060] Its total light reflectance is Figure 2 shown.
[0061] Comparative Example 1
[0062] Structure: From bottom to top, it includes: substrate layer: 100μm; ITO layer: 100nm.
[0063] Its total light reflectance is Figure 3 shown.
[0064] Comparative Example 2
[0065] Structure: from bottom to top: substrate layer: 100 μm; first ITO layer: 40 nm; Ag layer: 15 nm; second ITO layer: 40 nm.
[0066] Its total light reflectance is Figure 4 shown.
[0067] Comparative Example 3
[0068] Structure: From bottom to top, it includes: substrate layer: 100μm; first ITO layer: 40nm; AZO layer: 20nm; Ag layer: 15nm; second ITO layer: 40nm.
[0069] Its total light reflectance is Figure 5 shown.
[0070] Comparative Example 4
[0071] Structure: from bottom to top: substrate layer: 100μm; first ITO layer: 40nm; first AZO layer: 20nm; Cu layer: 15nm; second AZO layer: 1nm; second ITO layer: 40nm.
[0072] Its total light reflectance is Figure 6 shown.
[0073] The dimming conductive films of Example 1 and Comparative Examples 1-4 were tested. The testing method is as follows:
[0074] Impedance test: Use 4 probe tester and test according to standard ASTM D991.
[0075] Light transmittance test: using a haze meter in accordance with ASTM D1003 standard.
[0076] Haze test: using a haze meter in accordance with ASTM D1003 standard.
[0077] Salt spray resistance test: refer to national standard GB / T2423.17-2008.
[0078] High temperature and high humidity test: temperature and humidity conditions 85℃ / 85%RH, placed for 240 hours. The relevant test results are shown in Table 1 below.
[0079] Table 1 Related test results of Example 1 and Comparative Examples 1-4
[0080]
[0081]
[0082] According to the above Table 1, the light-adjusting conductive films of Example 1 and Comparative Examples 1 to 4 are analyzed, wherein 380-780 nm is the visible light band, and 800-200 nm is the infrared light band.
[0083] The dimming conductive film of Example 1 has good visible light transmittance, low haze, low impedance, good conductivity, and good weather resistance. Figure 2 It can be seen that its average infrared light reflectivity is about 70%, which has a good infrared blocking effect.
[0084] Since the dimming conductive film of Comparative Example 1 has only an ITO layer and no Ag alloy layer, and the conductivity of the ITO layer is not as good as that of the Ag alloy layer, it has high impedance, high haze, and slightly poor visible light transmittance. Figure 3 It can be seen that its average infrared light reflectivity is only about 10%, and the heat barrier effect is poor.
[0085] The dimming conductive film of Comparative Example 2 has poor adhesion, poor salt spray resistance test and high haze due to the lack of AZO layer. Figure 4 It can be seen that its average infrared light reflectivity is about 70%, which has a good infrared blocking effect.
[0086] Since the dimming conductive film of Comparative Example 3 lacks a metal barrier layer, its Ag layer is easily oxidized, the impedance is slightly higher, and the conductive effect is slightly worse. Figure 5 It can be seen that its average infrared light reflectivity is about 70%, which has a good infrared blocking effect.
[0087] The dimming conductive film of Comparative Example 4 uses metal copper instead of the Ag alloy layer, which has higher impedance, higher haze and lower transmittance. Figure 6 It can be seen that its average infrared light reflectivity is about 70%, which has a good infrared blocking effect.
[0088] In summary, the dimming conductive film of the present invention makes the surface of the first ITO layer 5 smoother by adding the first AZO layer 6 on the first ITO layer 5, so that it can be used as a seed layer of the Ag alloy layer 7, so that the Ag alloy layer 7 is more uniform and the weather resistance is improved. At the same time, the introduction of the Ag alloy layer 7 can improve the heat insulation performance of the dimming conductive film, and the process is simple, which reduces the manufacturing cost. In addition, controlling the surface roughness of the first ITO layer 5 can reduce the haze of the dimming conductive film. The metal barrier layer 8 can prevent the Ag alloy layer 7 from oxidizing during use, thereby improving its durability. The dimming conductive film solves the problems of high haze and high square resistance in the prior art through the arrangement of the above-mentioned layer structure, and improves the durability of the Ag alloy layer 7 and the ITO layer, integrates heat insulation and dimming, and reduces the manufacturing cost of automobile skylight glass.
[0089] The preparation method of the light-adjusting conductive film of the present invention does not require oxygen to be introduced when preparing the Ag alloy layer, thereby avoiding the problem of failure of the light-adjusting conductive film caused by oxidation during the sputtering of the Ag alloy layer. The preparation method improves the adhesion of the Ag alloy layer and the ITO layer by first preparing the first AZO layer, thereby improving the durability of the ITO layer.
[0090] It will be apparent to those skilled in the art that the invention is not limited to the details of the exemplary embodiments described above and that the invention can be implemented in other specific forms without departing from the spirit or essential features of the invention. Therefore, the embodiments should be considered exemplary and non-limiting in all respects, and the scope of the invention is defined by the appended claims rather than the foregoing description, and it is intended that all variations falling within the meaning and scope of the equivalent elements of the claims be included in the invention. Any reference numeral in a claim should not be considered as limiting the claim to which it relates.
[0091] In addition, it should be understood that although the present specification is described according to implementation modes, not every implementation mode contains only one independent technical solution. This description of the specification is only for the sake of clarity. Those skilled in the art should regard the specification as a whole. The technical solutions in each embodiment may also be appropriately combined to form other implementation modes that can be understood by those skilled in the art.
Claims
1. A light-adjusting conductive film, characterized in that: include: The substrate layer has a low-fold pre-coating surface and a high-fold pre-coating surface that are arranged oppositely; A low-refractive resin layer is coated on the low-refractive pre-coated surface; A high-refractive resin layer is coated on the high-refractive pre-coated surface; A silicon oxide layer, magnetron sputtered on the surface of the high-refractive resin layer; A first ITO layer, magnetron sputtered on the surface of the silicon oxide layer; A first AZO layer, magnetron sputtered on the surface of the first ITO layer; An Ag alloy layer is magnetron sputtered on the surface of the first AZO layer; A metal barrier layer, magnetron sputtered on the surface of the Ag alloy layer; and The second ITO layer is magnetron sputtered on the surface of the barrier layer.
2. The light-adjustable conductive film according to claim 1, characterized in that: The thickness of the low-refractive resin layer is between 0.8 μm and 1 μm; and / or the refractive index of the low-refractive resin layer is between 1.5nd and 1.55nd.
3. The light-adjustable conductive film according to claim 1, characterized in that: The thickness of the high-refractive resin layer is between 0.8 μm and 1.2 μm; and / or the refractive index of the high-refractive resin layer is between 1.62nd and 1.68nd; and / or the roughness Ra of the high-refractive resin layer is between 2nm and 5nm.
4. The light-adjustable conductive film according to claim 1, characterized in that: The thickness of the silicon oxide layer is between 15 nm and 20 nm.
5. The light-adjustable conductive film according to claim 1, characterized in that: The thickness of the first ITO layer is between 30nm-40nm; and / or, the mass ratio of indium oxide to tin oxide in the first ITO layer is between (90-95):(10-5); and / or, the surface roughness Ra of the first ITO layer is between 2nm-5nm.
6. The light-adjustable conductive film according to claim 1, characterized in that: The thickness of the first AZO layer is between 10 nm and 20 nm; and / or the mass ratio of aluminum oxide to zinc oxide in the first AZO layer is between (0-5):(100-95); and / or the surface roughness Ra of the first AZO layer is between 0.5 nm and 1.5 nm.
7. The light-adjustable conductive film according to claim 1, characterized in that: The thickness of the Ag alloy layer is between 10nm and 20nm; and / or the Ag alloy layer is selected from a plurality of precious metals such as Ag, Au, and Pd; and / or the mass of Ag in the Ag alloy layer accounts for 95% to 99% of the total mass of the Ag alloy layer, and the mass of other metals accounts for 1% to 5% of the total mass of the Ag alloy layer.
8. The light-adjustable conductive film according to claim 1, characterized in that: The metal barrier layer is selected from one of an AZO layer, a SNO layer and a ZNO layer; and / or, the thickness of the metal barrier layer is between 1 nm and 2 nm.
9. The light-adjustable conductive film according to claim 1, characterized in that: The thickness of the second ITO layer is between 30 nm and 40 nm; and / or the mass ratio of indium oxide to tin oxide in the second ITO layer is between (90-95):(10-5).
10. A method for preparing a light-adjustable conductive film according to any one of claims 1 to 9, characterized in that: include: Providing a substrate layer, wherein the substrate layer has a low-fold pre-coating surface and a high-fold pre-coating surface that are arranged opposite to each other; Applying acrylic resin on the low-refractive pre-coated surface to form a low-refractive resin layer, and applying acrylic resin on the high-refractive pre-coated surface to form a high-refractive resin layer; Passing oxygen and argon gas, bombarding a silicon target with argon gas to form a silicon oxide layer by magnetron sputtering on the surface of the high-refractive resin layer; Passing oxygen and argon gas, bombarding an indium tin oxide target with argon gas to form a first ITO layer by magnetron sputtering on the surface of the silicon oxide layer; Passing oxygen and argon gas, bombarding the zinc oxide aluminum target with argon gas to form a first AZO layer on the surface of the first ITO layer by magnetron sputtering; In an oxygen-free environment, using argon gas to bombard a Ag alloy target to form a Ag alloy layer on the surface of the first AZO layer by magnetron sputtering; In an oxygen-free environment, using argon gas to bombard a metal target material to form a metal barrier layer on the surface of the Ag alloy layer by magnetron sputtering; and Oxygen and argon are introduced, and the argon gas is used to bombard the indium tin oxide target to form a second ITO layer on the surface of the barrier layer.