DC bias voltage control device and control method, electronic equipment and storage medium

Abstract

The invention discloses a direct current bias voltage control device and control method, electronic equipment and a storage medium. The direct current bias voltage control device comprises an electrostatic chuck which adsorbs a wafer; a lower radio frequency power supply and a lower matcher, wherein the lower radio frequency power supply is connected with the lower matcher; the voltage sensor is arranged at the bottom of the electrostatic chuck, the voltage sensor is connected with the electrostatic chuck and the lower radio frequency power supply, and the voltage sensor obtains a voltage signal of the electrostatic chuck to the ground, converts the voltage signal into an analog quantity voltage signal and transmits the analog quantity voltage signal to the lower radio frequency power supply; the lower radio frequency power supply processes the received analog quantity voltage signal to obtain a direct current bias voltage, the direct current bias voltage is compared with a preset voltage value, and the output power of the lower radio frequency power supply is adjusted to enable the direct current bias voltage to be equal to the preset voltage value. According to the invention, the output power is stable and does not fluctuate greatly, reliable power output is provided, and adverse effects on a process result are avoided.

Description

Technical Field

[0001] The embodiments of the present invention relate to the field of semiconductor process technology, and in particular to a direct current bias voltage control device and control method, electronic equipment and storage medium. Background Art

[0002] According to different plasma sources, plasma etching equipment can be divided into inductively coupled plasma (ICP) and capacitively coupled plasma (CCP) equipment. There is an induction coil in the ICP equipment. When the RF power output by the RF source passes through the coil, an RF current is formed, generating an AC magnetic field. This AC magnetic field will generate a time-varying electric field after inductive coupling. In this time-varying electric field, the movement speed of electrons is much higher than that of ions, and the plasma potential will be higher than other nearby objects. A DC voltage difference will be maintained between the plasma and the electrode, that is, the DC bias voltage U dc In ICP plasma etching equipment, the DC bias voltage generated by the lower RF power supply on the wafer to be etched is a very important etching process parameter. DC bias voltage U dc It determines the energy of the plasma bombarding the wafer surface and directly affects the plasma etching rate.

[0003] The current DC bias voltage U dc There are many problems in controlling the power output of the lower RF power supply: when the lower RF power supply starts to output power, there will be a short peak value, which will cause damage to the lower RF power supply and machine components; the power output is unstable under different process menu gas conditions (CF4, HBR, etc.); after the output is stable, the output power of the lower RF power supply will fluctuate around a fixed value, and the latter two will have an adverse effect on the process results. Therefore, a safe, efficient and widely applicable DC bias voltage U is proposed. dc Controlling power supply output is an urgent problem to be solved. Summary of the invention

[0004] The present invention provides a DC bias voltage control device and control method, an electronic device and a storage medium, which solve the problem that the output power of the existing DC bias voltage control device is unstable and fluctuates greatly, which has an adverse effect on the process results. The output power is stable and will not fluctuate greatly, providing reliable and stable output power, ensuring the consistency of the etching rate, and will not have an adverse effect on the process results.

[0005] According to one aspect of the present invention, a DC bias voltage control device is provided, the DC bias voltage control device comprising: An electrostatic chuck, the electrostatic chuck is used to adsorb the wafer; A lower radio frequency power supply and a lower matching device, wherein the lower radio frequency power supply is connected to the lower matching device; A voltage sensor, which is disposed at the bottom of the electrostatic chuck, is connected to the electrostatic chuck and the lower RF power supply, and is used to obtain a voltage signal of the electrostatic chuck to the ground, convert the voltage signal into an analog voltage signal, and transmit the analog voltage signal to the lower RF power supply; The lower RF power supply is used to process the received analog voltage signal to obtain a DC bias voltage, compare the DC bias voltage with a preset voltage value, and adjust the output power of the lower RF power supply so that the DC bias voltage is equal to the preset voltage value.

[0006] Optionally, the DC bias voltage control device further includes an upper radio frequency power supply; The upper RF power supply is connected to the lower RF power supply, the upper RF power supply is used to control the generation of inductively coupled plasma in the reaction chamber, and the lower RF power supply is used to control the energy of the plasma in the reaction chamber according to the generated DC bias voltage.

[0007] Optionally, the DC bias voltage control device further includes a co-frequency line, which is connected to the upper RF power supply and the lower RF power supply, and is used to control the fluctuation amplitude of the output power of the lower RF power supply.

[0008] Optionally, the upper RF power supply is a master power supply, the lower RF power supply is a slave power supply, and a startup priority of the upper RF power supply is higher than a startup priority of the lower RF power supply.

[0009] Optionally, the working mode of the lower RF power supply includes: power mode or voltage mode; The power mode controls the output power of the lower RF power supply according to a set power value, and the voltage mode controls the output power of the lower RF power supply according to the preset voltage value.

[0010] Optionally, controlling the output power of the lower RF power supply according to the preset voltage value includes: The analog voltage signal returned by the voltage sensor is processed to obtain a DC bias voltage, a scaling ratio between the received analog voltage signal and the DC bias voltage is set, the DC bias voltage is compared with the preset voltage value, and the output power of the lower RF power supply is adjusted so that the DC bias voltage is equal to the preset voltage value.

[0011] Optionally, the scaling ratio ranges from 200 to 300.

[0012] According to another aspect of the present invention, a method for controlling a DC bias voltage is provided. The method for controlling a DC bias voltage is performed by a DC bias voltage control device according to any embodiment of the present invention. The DC bias voltage control device comprises: an electrostatic chuck, the electrostatic chuck is used to adsorb a wafer; a lower RF power supply and a lower matcher, the lower RF power supply is connected to the lower matcher; a voltage sensor, the voltage sensor is arranged at the bottom of the electrostatic chuck, the voltage sensor is connected to the electrostatic chuck and the lower RF power supply; The control method of the DC bias voltage comprises: The voltage sensor obtains a voltage signal from the electrostatic chuck to the ground, converts the voltage signal into an analog voltage signal, and transmits the analog voltage signal to the lower RF power supply; The lower RF power supply processes the received analog voltage signal to obtain a DC bias voltage, compares the DC bias voltage with a preset voltage value, and adjusts the output power of the lower RF power supply so that the DC bias voltage is equal to the preset voltage value.

[0013] According to another aspect of the present invention, there is also provided an electronic device, the electronic device comprising: one or more processors; A memory for storing one or more programs; When the one or more programs are executed by the one or more processors, the one or more processors implement the method for controlling the DC bias voltage as described in any embodiment of the present invention.

[0014] According to another aspect of the present invention, a computer-readable storage medium is provided, on which a computer program is stored. When the computer program is executed by a processor, the method for controlling a DC bias voltage as described in any embodiment of the present invention is implemented.

[0015] The technical solution of the embodiment of the present invention provides a DC bias voltage control device, which provides reliable power supply control output power for different chamber environments to ensure the consistency of etching rate. By adding the processing flow of analog voltage signals, instead of directly converting the analog voltage signals into DC bias voltages, large fluctuations in output power are avoided, and the consistency of etching rate is ensured, which will not have an adverse effect on the process results. When processing the analog voltage signals, the analog voltage signals are not processed in real time, but the voltage of the analog voltage signals within a period of time is averaged, and then converted into a DC bias voltage according to the scaling ratio. The RF power supply then adjusts the output RF power according to the changes in the analog voltage signals. The final output power will be significantly stable, ensuring the consistency of etching rate, and will not have an adverse effect on the process results. In summary, the present invention solves the problem that the output power of the existing DC bias voltage control device is unstable and fluctuates greatly, which has an adverse effect on the process results.

[0016] It should be understood that the contents described in this section are not intended to identify the key or important features of the embodiments of the present invention, nor are they intended to limit the scope of the present invention. Other features of the present invention will become easily understood through the following description. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the following briefly introduces the drawings required for use in the description of the embodiments. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.

[0018] Figure 1 is a structural schematic diagram of a DC bias voltage control device provided according to an embodiment of the present invention; Figure 2 is a structural schematic diagram of another DC bias voltage control device provided according to an embodiment of the present invention; Figure 3 is a flow chart of a method for controlling a DC bias voltage according to an embodiment of the present invention; Figure 4 It is a schematic diagram of the structure of an electronic device provided according to an embodiment of the present invention. DETAILED DESCRIPTION

[0019] In order to enable those skilled in the art to better understand the scheme of the present invention, the technical scheme in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work should fall within the scope of protection of the present invention.

[0020] It should be noted that the terms "first", "second", etc. in the specification and claims of the present invention and the above-mentioned drawings are used to distinguish similar objects, and are not necessarily used to describe a specific order or sequence. It should be understood that the data used in this way can be interchanged where appropriate, so that the embodiments of the present invention described herein can be implemented in an order other than those illustrated or described herein. In addition, the terms "including" and "having" and any variations thereof are intended to cover non-exclusive inclusions, for example, a process, method, system, product or device that includes a series of steps or units is not necessarily limited to those steps or units that are clearly listed, but may include other steps or units that are not clearly listed or inherent to these processes, methods, products or devices.

[0021] Figure 1 is a schematic diagram of the structure of a DC bias voltage control device provided according to an embodiment of the present invention, with reference to Figure 1 The embodiment of the present invention provides a DC bias voltage control device, which includes: an electrostatic chuck 10, which is used to adsorb a wafer; a lower RF power supply 20 and a lower matcher 30, which are connected to the lower RF power supply 20; a voltage sensor 40, which is arranged at the bottom of the electrostatic chuck 10, and is connected to the electrostatic chuck 10 and the lower RF power supply 20, and is used to obtain a voltage signal of the electrostatic chuck 10 to the ground, convert the voltage signal into an analog voltage signal and transmit it to the lower RF power supply 20; the lower RF power supply 20 is used to process the received analog voltage signal to obtain a DC bias voltage, compare the DC bias voltage with a preset voltage value, and adjust the output power of the lower RF power supply 20 so that the DC bias voltage is equal to the preset voltage value.

[0022] Specifically, a voltage sensor 40 is added to the bottom of the electrostatic chuck 10, one end of the voltage sensor 40 is connected to the bottom of the electrostatic chuck 10, and the other end of the voltage sensor 40 is connected to the lower RF power supply 20. When the lower RF power supply 20 is turned on, the voltage sensor 40 can obtain the voltage signal of the electrostatic chuck 10 to the ground, and convert the voltage signal into an analog voltage signal and transmit it to the lower RF power supply 20. The lower RF power supply 20 will amplify the received analog voltage signal to obtain a DC bias voltage, compare it with the preset voltage value, and adjust the output power until the DC bias voltage is consistent with the preset voltage value.

[0023] Existing RF power supplies often output RF power according to the power value set by the power supply. However, due to the inevitable differences in chamber conditions, even if the RF power output by the RF power supply is the same, the DC bias voltage is not exactly the same, resulting in inconsistent etching rates. The embodiment of the present invention uses a mixed control mode of the lower RF power supply and the DC bias voltage, and uses the DC bias voltage and power to simultaneously limit the output of the lower RF power supply to ensure that no damage is caused to the machine components. In addition, the processing flow of the analog voltage signal is added, instead of directly converting the analog voltage signal into the DC bias voltage, thereby solving the problem of large fluctuations in output power.

[0024] When the DC bias voltage is used to control the lower RF power supply 20 to output power, the lower RF power supply 20 needs the analog voltage signal sent back by the voltage sensor 40 for reference. There is a conversion relationship of scaling ratio between the analog voltage signal and the DC bias voltage. A slight change in the analog voltage signal may cause a large fluctuation in the DC bias voltage, thereby causing the output power of the lower RF power supply 20 to be unstable. When processing the analog voltage signal, the present invention does not process the analog voltage signal in real time, but takes the average of the voltage of the analog voltage signal within a period of time, and then converts it into a DC bias voltage according to the scaling ratio. The lower RF power supply 20 then adjusts the output RF power according to the change of the analog voltage signal, and the output power will be significantly stabilized in the end.

[0025] The technical solution of the embodiment of the present invention provides a DC bias voltage control device, which provides reliable power supply control output power for different chamber environments to ensure the consistency of etching rate. By adding the processing flow of analog voltage signals, instead of directly converting the analog voltage signals into DC bias voltages, large fluctuations in output power are avoided, and the consistency of etching rate is ensured, which will not have an adverse effect on the process results. When processing the analog voltage signals, the analog voltage signals are not processed in real time, but the voltage of the analog voltage signals within a period of time is averaged, and then converted into a DC bias voltage according to the scaling ratio. The RF power supply then adjusts the output RF power according to the changes in the analog voltage signals. The final output power will be significantly stable, ensuring the consistency of etching rate, and will not have an adverse effect on the process results. In summary, the present invention solves the problem that the output power of the existing DC bias voltage control device is unstable and fluctuates greatly, which has an adverse effect on the process results.

[0026] Figure 2 is a schematic diagram of the structure of another DC bias voltage control device provided according to an embodiment of the present invention, with reference to Figure 2 Optionally, the DC bias voltage control device also includes an upper RF power supply 50; the upper RF power supply 50 is connected to the lower RF power supply 20, the upper RF power supply 50 is used to control the generation of inductively coupled plasma in the reaction chamber, and the lower RF power supply 20 is used to control the energy of the plasma in the reaction chamber according to the generated DC bias voltage.

[0027] Specifically, the DC bias voltage control device includes an upper RF power supply, an upper matcher, an inductively coupled coil, a reaction chamber, an electrostatic chuck for adsorbing a wafer, a spectrometer, a lower matcher, a lower RF power supply, a voltage sensor, and a dielectric window. When the DC bias voltage control device is working, the upper RF power supply 50 is used to control the generation of inductively coupled plasma in the reaction chamber, and the lower RF power supply 20 is used to generate a DC bias voltage to control the energy of the plasma in the reaction chamber.

[0028] Continue to refer Figure 2 Optionally, the DC bias voltage control device also includes a frequency-corresponding line 60, which is connected to the upper RF power supply 50 and the lower RF power supply 20, and is used to control the fluctuation amplitude of the output power of the lower RF power supply 20.

[0029] Specifically, if the power output by the lower RF power source 20 fluctuates around a fixed value, a co-frequency line 60 may be connected between the upper RF power source 50 and the lower RF power source 20 to set a phase deviation to solve co-frequency crosstalk.

[0030] Optionally, the upper RF power supply is a master power supply, the lower RF power supply is a slave power supply, and a startup priority of the upper RF power supply is higher than a startup priority of the lower RF power supply.

[0031] Specifically, when the power output by the lower RF power supply fluctuates around a fixed value, a co-frequency line can be connected between the upper RF power supply and the lower RF power supply to set the co-frequency, set the upper RF power supply as the main power supply, and the lower RF power supply as the slave power supply. After turning on the upper RF power supply, turn on the lower RF power supply, and the power output by the lower RF power supply will be much more stable.

[0032] Optionally, the working mode of the lower RF power supply includes: power mode or voltage mode; The power mode controls the output power of the RF power supply according to the set power value, and the voltage mode controls the output power of the RF power supply according to the preset voltage value.

[0033] Optionally, controlling the output power of the RF power supply according to a preset voltage value includes: The analog voltage signal returned by the voltage sensor is processed to obtain a DC bias voltage, the scaling ratio between the received analog voltage signal and the DC bias voltage is set, the DC bias voltage is compared with the preset voltage value, and the output power of the RF power supply is adjusted so that the DC bias voltage is equal to the preset voltage value.

[0034] Specifically, the lower RF power supply provides two output modes: one is the power mode, which directly outputs the RF power according to the set power value, which is the default output mode. The other is the voltage mode, which outputs according to the set voltage. It is necessary to set the scaling ratio between the read analog voltage signal and the actual DC bias voltage (that is, the DC bias voltage obtained after the analog voltage signal returned by the voltage sensor is processed). The output RF power starts to rise from 0, and the analog voltage signal processing result returned by the voltage sensor is compared with the preset voltage value to adjust the output power of the lower RF power supply until the two are consistent.

[0035] Optionally, the zoom ratio ranges from 200 to 300.

[0036] Specifically, in order to solve the short-term peak phenomenon that occurs when the lower RF power supply is turned on under the condition that the lower RF power supply outputs RF power under the control of a DC bias voltage, the present invention improves the lower RF power supply. Instead of simply controlling the power by a DC bias voltage, a hybrid control mode is provided. After turning on this mode, in addition to setting the scaling ratio and the desired DC bias voltage, the maximum achievable output power also needs to be set to suppress the peak value that can be reached at the moment of turning on.

[0037] Regarding the setting of the scaling ratio: if the actual DC bias voltage to be achieved is 100V and the scaling ratio is set to 200, the voltage value of the analog voltage signal to be achieved is 0.5V. The RF power supply will adjust the output power until the voltage value of the analog voltage signal returned by the voltage sensor is 0.5V.

[0038] The embodiment of the present invention further provides a method for controlling a DC bias voltage, and the method for controlling a DC bias voltage is performed by a DC bias voltage control device of any embodiment of the present invention, and the DC bias voltage control device comprises: an electrostatic chuck, the electrostatic chuck is used to adsorb a wafer; a lower RF power supply and a lower matcher, the lower RF power supply is connected to the lower matcher; a voltage sensor, the voltage sensor is arranged at the bottom of the electrostatic chuck, and the voltage sensor is connected to the electrostatic chuck and the lower RF power supply; Figure 3 is a flow chart of a method for controlling a DC bias voltage according to an embodiment of the present invention, with reference to Figure 3 , the control method of the DC bias voltage includes: S110, the voltage sensor obtains the voltage signal of the electrostatic chuck to the ground, converts the voltage signal into an analog voltage signal and transmits it to the lower RF power supply.

[0039] S120, the lower RF power supply processes the received analog voltage signal to obtain a DC bias voltage, compares the DC bias voltage with a preset voltage value, and adjusts the output power of the lower RF power supply so that the DC bias voltage is equal to the preset voltage value.

[0040] Specific, combined Figure 1 , a voltage sensor 40 is added to the bottom of the electrostatic chuck 10, one end of the voltage sensor 40 is connected to the bottom of the electrostatic chuck 10, and the other end of the voltage sensor 40 is connected to the lower RF power supply 20. When the lower RF power supply 20 is turned on, the voltage sensor 40 can obtain the voltage signal of the electrostatic chuck 10 to the ground, and convert the voltage signal into an analog voltage signal and transmit it to the lower RF power supply 20. The lower RF power supply 20 will amplify the received analog voltage signal to obtain a DC bias voltage, compare it with the preset voltage value and adjust the output power until the DC bias voltage is consistent with the preset voltage value.

[0041] When the DC bias voltage is used to control the lower RF power supply 20 to output power, the lower RF power supply 20 needs the analog voltage signal sent back by the voltage sensor 40 for reference. There is a conversion relationship of scaling ratio between the analog voltage signal and the DC bias voltage. A slight change in the analog voltage signal may cause a large fluctuation in the DC bias voltage, thereby causing the output power of the lower RF power supply 20 to be unstable. When processing the voltage signal, the present invention does not process the analog voltage signal in real time, but takes the average of the voltage of the analog voltage signal within a period of time, and then converts it into a DC bias voltage according to the scaling ratio. The lower RF power supply 20 then adjusts the output RF power according to the change of the analog voltage signal, and the output power will be significantly stabilized in the end.

[0042] The DC bias voltage control method provided in the embodiment of the present invention is used to control the DC bias voltage control device provided in the embodiment of the present invention. Therefore, the DC bias voltage control method and the DC bias voltage control device have the same beneficial effects, which will not be described in detail herein.

[0043] Figure 4 A schematic diagram of the structure of an electronic device 1 that can be used to implement an embodiment of the present invention is shown. The electronic device is intended to represent various forms of digital computers, such as laptop computers, desktop computers, workstations, personal digital assistants, servers, blade servers, mainframe computers, and other suitable computers. The electronic device can also represent various forms of mobile devices, such as personal digital processing, cellular phones, smart phones, wearable devices (such as helmets, glasses, watches, etc.) and other similar computing devices. The components shown herein, their connections and relationships, and their functions are merely examples and are not intended to limit the implementation of the present invention described and / or required herein.

[0044] like Figure 4 As shown, the electronic device 1 includes at least one processor 11, and a memory connected to the at least one processor 11, such as a read-only memory (ROM) 12, a random access memory (RAM) 13, etc., wherein the memory stores a computer program that can be executed by at least one processor, and the processor 11 can perform various appropriate actions and processes according to the computer program stored in the read-only memory (ROM) 12 or the computer program loaded from the storage unit 18 to the random access memory (RAM) 13. In the RAM 13, various programs and data required for the operation of the electronic device 1 can also be stored. The processor 11, the ROM 12, and the RAM 13 are connected to each other through a bus 14. The input / output (I / O) interface 15 is also connected to the bus 14.

[0045] A number of components in the electronic device 1 are connected to the I / O interface 15, including: an input unit 16, such as a keyboard, a mouse, etc.; an output unit 17, such as various types of displays, speakers, etc.; a storage unit 18, such as a disk, an optical disk, etc.; and a communication unit 19, such as a network card, a modem, a wireless communication transceiver, etc. The communication unit 19 allows the electronic device 1 to exchange information / data with other devices through a computer network such as the Internet and / or various telecommunication networks.

[0046] The processor 11 may be a variety of general and / or dedicated processing components with processing and computing capabilities. Some examples of the processor 11 include, but are not limited to, a central processing unit (CPU), a graphics processing unit (GPU), various dedicated artificial intelligence (AI) computing chips, various processors running machine learning model algorithms, a digital signal processor (DSP), and any appropriate processor, controller, microcontroller, etc. The processor 11 performs the various methods and processes described above, for example, a method for controlling a DC bias voltage.

[0047] In some embodiments, the control method of the DC bias voltage can be implemented as a computer program, which is tangibly contained in a computer-readable storage medium, such as a storage unit 18. In some embodiments, part or all of the computer program can be loaded and / or installed on the electronic device 1 via the ROM 12 and / or the communication unit 19. When the computer program is loaded into the RAM 13 and executed by the processor 11, one or more steps of the control method of the DC bias voltage described above can be performed. Alternatively, in other embodiments, the processor 11 can be configured to perform the control method of the DC bias voltage in any other appropriate manner (for example, by means of firmware).

[0048] Various implementations of the systems and techniques described above herein can be implemented in digital electronic circuit systems, integrated circuit systems, field programmable gate arrays (FPGAs), application specific integrated circuits (ASICs), application specific standard products (ASSPs), systems on chips (SOCs), load programmable logic devices (CPLDs), computer hardware, firmware, software, and / or combinations thereof. These various implementations can include: being implemented in one or more computer programs that can be executed and / or interpreted on a programmable system including at least one programmable processor, which can be a special purpose or general purpose programmable processor that can receive data and instructions from a storage system, at least one input device, and at least one output device, and transmit data and instructions to the storage system, the at least one input device, and the at least one output device.

[0049] Computer programs for implementing the methods of the present invention may be written in any combination of one or more programming languages. These computer programs may be provided to a processor of a general-purpose computer, a special-purpose computer, or other programmable data processing device, so that when the computer program is executed by the processor, the functions / operations specified in the flow chart and / or block diagram are implemented. The computer program may be executed entirely on the machine, partially on the machine, partially on the machine and partially on a remote machine as a stand-alone software package, or entirely on a remote machine or server.

[0050] In the context of the present invention, a computer-readable storage medium may be a tangible medium that may contain or store a computer program for use by or in conjunction with an instruction execution system, device, or equipment. A computer-readable storage medium may include, but is not limited to, electronic, magnetic, optical, electromagnetic, infrared, or semiconductor systems, devices, or equipment, or any suitable combination of the foregoing. Alternatively, a computer-readable storage medium may be a machine-readable signal medium. A more specific example of a machine-readable storage medium may include an electrical connection based on one or more lines, a portable computer disk, a hard disk, a random access memory (RAM), a read-only memory (ROM), an erasable programmable read-only memory (EPROM or flash memory), an optical fiber, a portable compact disk read-only memory (CD-ROM), an optical storage device, a magnetic storage device, or any suitable combination of the foregoing.

[0051] To provide interaction with a user, the systems and techniques described herein may be implemented on an electronic device having: a display device (e.g., a CRT (cathode ray tube) or LCD (liquid crystal display) monitor) for displaying information to the user; and a keyboard and a pointing device (e.g., a mouse or trackball) through which the user can provide input to the electronic device. Other types of devices may also be used to provide interaction with the user; for example, the feedback provided to the user may be any form of sensory feedback (e.g., visual feedback, auditory feedback, or tactile feedback); and input from the user may be received in any form (including acoustic input, voice input, or tactile input).

[0052] The systems and techniques described herein may be implemented in a computing system that includes backend components (e.g., as a data server), or a computing system that includes middleware components (e.g., an application server), or a computing system that includes frontend components (e.g., a user computer with a graphical user interface or a web browser through which a user can interact with implementations of the systems and techniques described herein), or a computing system that includes any combination of such backend components, middleware components, or frontend components. The components of the system may be interconnected by any form or medium of digital data communication (e.g., a communication network). Examples of communication networks include: a local area network (LAN), a wide area network (WAN), a blockchain network, and the Internet.

[0053] A computing system may include a client and a server. The client and the server are generally remote from each other and usually interact through a communication network. The client and server relationship is generated by computer programs running on the corresponding computers and having a client-server relationship with each other. The server may be a cloud server, also known as a cloud computing server or cloud host, which is a host product in the cloud computing service system to solve the defects of difficult management and weak business scalability in traditional physical hosts and VPS services.

[0054] It should be understood that the various forms of processes shown above can be used to reorder, add or delete steps. For example, the steps described in the present invention can be executed in parallel, sequentially or in different orders, as long as the desired results of the technical solution of the present invention can be achieved, and this document does not limit this.

[0055] The above specific implementations do not constitute a limitation on the protection scope of the present invention. It should be understood by those skilled in the art that various modifications, combinations, sub-combinations and substitutions can be made according to design requirements and other factors. Any modification, equivalent substitution and improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.

Claims

1. A DC bias voltage control device, characterized in that: include: An electrostatic chuck, the electrostatic chuck is used to adsorb the wafer; A lower radio frequency power supply and a lower matching device, wherein the lower radio frequency power supply is connected to the lower matching device; A voltage sensor, which is disposed at the bottom of the electrostatic chuck, is connected to the electrostatic chuck and the lower RF power supply, and is used to obtain a voltage signal of the electrostatic chuck to the ground, convert the voltage signal into an analog voltage signal, and transmit the analog voltage signal to the lower RF power supply; The lower RF power supply is used to process the received analog voltage signal to obtain a DC bias voltage, compare the DC bias voltage with a preset voltage value, and adjust the output power of the lower RF power supply so that the DC bias voltage is equal to the preset voltage value.

2. The device according to claim 1, characterized in that Also includes an upper radio frequency power supply; The upper RF power supply is connected to the lower RF power supply, the upper RF power supply is used to control the generation of inductively coupled plasma in the reaction chamber, and the lower RF power supply is used to control the energy of the plasma in the reaction chamber according to the generated DC bias voltage.

3. The device according to claim 2, characterized in that It also includes a same-frequency line, which is connected to the upper RF power supply and the lower RF power supply, and is used to control the fluctuation amplitude of the output power of the lower RF power supply.

4. The device according to claim 3, characterized in that The upper RF power supply is a master power supply, the lower RF power supply is a slave power supply, and a startup priority of the upper RF power supply is higher than a startup priority of the lower RF power supply.

5. The device according to claim 1, characterized in that The working mode of the lower RF power supply includes: power mode or voltage mode; The power mode controls the output power of the lower RF power supply according to a set power value, and the voltage mode controls the output power of the lower RF power supply according to the preset voltage value.

6. The device according to claim 5, characterized in that The controlling the output power of the lower RF power supply according to the preset voltage value comprises: The analog voltage signal returned by the voltage sensor is processed to obtain a DC bias voltage, a scaling ratio between the received analog voltage signal and the DC bias voltage is set, the DC bias voltage is compared with the preset voltage value, and the output power of the lower RF power supply is adjusted so that the DC bias voltage is equal to the preset voltage value.

7. The device according to claim 6, characterized in that The zoom ratio ranges from 200 to 300.

8. A method for controlling a DC bias voltage, characterized in that: The method is performed by the DC bias voltage control device according to any one of claims 1 to 7, wherein the DC bias voltage control device comprises: an electrostatic chuck, the electrostatic chuck is used to adsorb the wafer; a lower RF power supply and a lower matcher, the lower RF power supply is connected to the lower matcher; a voltage sensor, the voltage sensor is arranged at the bottom of the electrostatic chuck, and the voltage sensor is connected to the electrostatic chuck and the lower RF power supply; The control method of the DC bias voltage comprises: The voltage sensor obtains a voltage signal from the electrostatic chuck to the ground, converts the voltage signal into an analog voltage signal, and transmits the analog voltage signal to the lower RF power supply; The lower RF power supply processes the received analog voltage signal to obtain a DC bias voltage, compares the DC bias voltage with a preset voltage value, and adjusts the output power of the lower RF power supply so that the DC bias voltage is equal to the preset voltage value.

9. An electronic device, characterized in that: include: one or more processors; A memory for storing one or more programs; When the one or more programs are executed by the one or more processors, the one or more processors implement the DC bias voltage control method as described in claim 8.

10. A computer-readable storage medium having a computer program stored thereon, characterized in that: When the computer program is executed by a processor, the method for controlling the DC bias voltage as claimed in claim 8 is implemented.

Images