Method for remotely processing fault memory bank based on Internet

Abstract

The invention discloses a method for remotely processing a fault memory bank based on the Internet, and relates to the technical field of storage. The method comprises the following steps: a client obtains memory bank parameter data; the client side sends the memory bank parameter data to the server side through the Internet; the server side analyzes the fault condition of the memory bank according to the memory bank parameter data; the server side sends the fault condition of the memory bank to the client side through the Internet; and the client processes the memory bank according to the memory bank fault condition. According to the invention, the server side analyzes the fault condition of the memory bank according to the memory bank parameter data, and the server side sends the fault condition of the memory bank to the client side through the Internet, so that the client side processes the memory bank according to the fault condition of the memory bank; the effects of accurately and efficiently analyzing whether the memory bank has the fault or not and processing the fault are achieved, and the problem that whether the memory bank has the fault or not is difficult to accurately and efficiently analyze in the prior art is solved.

Description

Technical Field

[0001] The present invention relates to the field of storage technology, and in particular to a method for remotely processing a faulty memory stick based on the Internet. Background Art

[0002] With the rapid development of Internet technology, people's demand for online services is increasing. Among them, the demand for computer hardware fault repair services is also gradually increasing. As one of the core components of a computer, the stability and performance of the memory stick are crucial to the operation of the entire system. However, due to various reasons, memory stick failures often occur, which can cause the computer system to run unstably or even paralyzed, causing many inconveniences to users. Traditional memory stick failure repair methods usually require users to bring the faulty hardware to a repair point, which is time-consuming and labor-intensive. Therefore, a more convenient method for handling faulty memory sticks is needed.

[0003] The existing memory stick fault processing system obtains the slot address and channel address of the target faulty memory stick by acquiring the error address of the target faulty memory stick, locates the target slot and target channel of the target faulty memory stick according to the slot address and channel address, locates the target faulty memory stick on the motherboard according to the target slot and target channel, and processes the target faulty memory stick to realize the memory stick fault processing function.

[0004] For example, the invention patent with announcement number: CN114461476B announces a memory stick fault detection method, device and system, including: setting a memory stick fault detection device, and connecting the detection device to a memory stick installation device to build a memory stick monitoring channel; through the memory stick monitoring channel, the integrated slices of the memory stick chip are graded to obtain grade slices; the address of the bit storage cells in the grade slices is calibrated, and the grade slices and the bit storage cells are numbered and sorted to obtain numbering results; according to the numbering results, whether the information processing work of the memory stick number address is normal, the judgment result is obtained, and an alarm is displayed for abnormal results.

[0005] For example, the method, device and storage medium for locating a faulty memory stick disclosed in the invention patent with announcement number: CN110688266B include: obtaining a first mapping table and a second mapping table, obtaining an error address of a target faulty memory stick, obtaining a slot address bit in the error address and a value corresponding to the slot address bit according to the first mapping table to obtain a slot address, locating the slot where the target faulty memory stick is located on the motherboard as a target slot according to the slot address and the first mapping table; obtaining a channel address bit and a value corresponding to the channel address bit according to the second mapping table to obtain a channel address, locating the channel where the target faulty memory stick is located on the motherboard as a target channel according to the channel address and the second mapping table, and locating the target faulty memory stick on the motherboard according to the target slot and the target channel.

[0006] However, in the process of implementing the technical solution of the invention in the embodiments of the present application, the present application found that the above technology has at least the following technical problems: In the prior art, there are many different manifestations and data for whether a memory stick is faulty, but usually only a single aspect is used to analyze whether a memory stick is faulty, which can easily lead to inaccurate analysis of whether the memory stick is faulty, and there is a problem that it is difficult to accurately and efficiently analyze whether a memory stick is faulty. Summary of the invention

[0007] The embodiment of the present application solves the problem in the prior art that it is difficult to accurately and efficiently analyze whether a memory stick is faulty by providing a method for remotely processing a faulty memory stick based on the Internet, thereby achieving accurate and efficient analysis of whether a memory stick is faulty.

[0008] An embodiment of the present application provides a method for remotely processing a faulty memory stick based on the Internet, comprising the following steps: a client obtains memory stick parameter data; the client sends the memory stick parameter data to a server via the Internet; the server analyzes the memory stick fault condition based on the memory stick parameter data; the server sends the memory stick fault condition to the client via the Internet; the client processes the memory stick based on the memory stick fault condition.

[0009] Furthermore, the memory stick failure conditions include: the degree to which the memory stick is affected by the failure in terms of capacity and operating frequency, the degree to which the memory stick is affected by the failure in terms of delay, and the degree to which the memory stick is affected by the failure in terms of voltage and current; the memory stick parameter data includes memory direct impact degree parameter data, memory delay impact degree parameter data, and memory voltage and current impact degree parameter data; the specific analysis process of the degree to which the memory stick is affected by the failure in terms of capacity and operating frequency is: obtaining memory direct impact degree parameter data; deriving a memory direct impact degree evaluation index based on the analysis of the memory direct impact degree parameter data, the memory direct impact degree evaluation index is used to reflect the degree to which the memory stick is affected by the failure in terms of capacity and operating frequency; analyzing the degree to which the memory stick is affected by the failure in terms of capacity and operating frequency based on the memory direct impact degree evaluation index.

[0010] Furthermore, the specific analysis process of analyzing the degree of impact of the fault on the capacity and operating frequency of the memory stick according to the memory direct impact degree assessment index is as follows: obtaining the memory direct impact degree assessment index, obtaining the memory direct impact degree threshold, comparing the memory direct impact degree assessment index with the memory direct impact degree threshold, when the memory direct impact degree assessment index is greater than the memory direct impact degree threshold, it indicates that the memory stick has not failed in terms of capacity and operating frequency; when in other situations, it indicates that the memory stick has failed in terms of capacity and operating frequency.

[0011] Furthermore, the specific analysis process of the degree to which the memory stick is affected by the fault in terms of delay is: obtaining memory delay impact parameter data; obtaining a memory delay impact evaluation index by analyzing the memory delay impact parameter data, wherein the memory delay impact evaluation index is used to express the degree to which the memory stick is affected by the fault in terms of delay; analyzing the degree to which the memory stick is affected by the fault in terms of delay according to the memory delay impact evaluation index.

[0012] Furthermore, the specific analysis process of analyzing the degree of impact of the memory stick on delay based on the memory delay impact assessment index is as follows: obtaining the memory delay impact assessment index, obtaining the memory delay impact threshold, comparing the memory delay impact assessment index with the memory delay impact threshold, when the memory delay impact assessment index is less than the memory delay impact threshold, it indicates that the memory stick has not failed in terms of delay; when in other situations, it indicates that the memory stick has failed in terms of delay.

[0013] Furthermore, the specific analysis process of the degree to which the memory stick is affected by the fault in terms of voltage and current is: obtaining memory voltage-current impact degree parameter data; analyzing the memory voltage-current impact degree parameter data to obtain a memory voltage-current impact degree evaluation index, wherein the memory voltage-current impact degree evaluation index is used to reflect the degree to which the memory stick is affected by the fault in terms of voltage and current; analyzing the degree to which the memory stick is affected by the fault in terms of voltage and current according to the memory voltage-current impact degree evaluation index.

[0014] Furthermore, the specific analysis process of analyzing the degree of influence of the fault on the voltage and current of the memory stick according to the memory pressure-flow influence degree assessment index is as follows: obtaining the memory pressure-flow influence degree assessment index, obtaining the memory pressure-flow influence first threshold and the memory pressure-flow influence second threshold, comparing the memory pressure-flow influence degree assessment index with the memory pressure-flow influence first threshold and the memory pressure-flow influence second threshold, when the memory pressure-flow influence degree assessment index is greater than the memory pressure-flow influence first threshold and less than the memory pressure-flow influence second threshold, it indicates that the memory stick has not failed in terms of voltage and current; when in other situations, it indicates that the memory stick has failed in terms of voltage and current.

[0015] Furthermore, the specific analysis process of the client processing the memory stick according to the memory stick failure situation is: when one or more of the memory stick fails in capacity and operating frequency, the memory stick fails in latency, and the memory stick fails in voltage and current, it indicates that the memory stick fails and the memory stick is processed; when in other situations, it indicates that the memory stick does not fail and the memory stick is not processed.

[0016] Furthermore, the processing of the memory stick specifically includes: cleaning the memory slot of the memory stick, trying to remove other hardware devices, restoring BIOS to factory settings, updating the operating system, and replacing the memory stick.

[0017] Furthermore, the specific method for obtaining the memory direct impact evaluation index is as follows: obtaining the number of memory bars and numbering the memory bars; performing multiple data collection on the memory bars, obtaining the number of data collection times, and numbering the number of data collection times; obtaining the weight ratio of the preset memory bar capacity and the memory bar operation frequency from the database; obtaining memory direct impact parameter data; constructing a memory direct impact evaluation index calculation formula based on the memory direct impact parameter data; the specific memory direct impact evaluation index calculation formula is: ; In the formula, Expressed as The memory direct impact evaluation index of each memory module, , Indicates the number of the memory bank. Indicates the total number of memory banks. Expressed as The memory stick is in The memory capacity of the data collection , It represents the number of data collection times. It is expressed as the total number of data collection times, Expressed as The memory stick is in The memory bank operating frequency during the data collection, Expressed as The standard capacity of memory sticks is Expressed as The standard operating frequency of the memory modules, It is expressed as the weight ratio of memory capacity in the memory direct impact evaluation index. It is expressed as the weight ratio of the memory module operating frequency in the memory direct impact evaluation index.

[0018] One or more technical solutions provided in the embodiments of the present application have at least the following technical effects or advantages: 1. Memory bar parameter data is obtained through the client, and the client sends the memory bar parameter data to the server through the Internet. The server analyzes the memory bar fault situation according to the memory bar parameter data, and the server sends the memory bar fault situation to the client through the Internet, so that the client processes the memory bar according to the memory bar fault situation, thereby realizing accurate and efficient analysis of whether the memory bar is faulty and performing fault processing, effectively solving the problem of difficulty in accurately and efficiently analyzing whether the memory bar is faulty in the prior art.

[0019] 2. By using the Internet to connect the client and the server and perform memory stick fault diagnosis, the server can diagnose and repair memory stick faults without having to be on site, thereby greatly saving time and cost and improving maintenance efficiency.

[0020] 3. By acquiring the memory pressure flow impact parameter data, the memory pressure flow impact assessment index is obtained based on the memory pressure flow impact parameter data analysis, thereby accurately analyzing the impact of the fault on the voltage and current of the memory bar based on the memory pressure flow impact assessment index. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] Figure 1 A flowchart of a method for remotely processing a faulty memory stick based on the Internet provided in an embodiment of the present application; Figure 2 This is a graph of the internal pressure flow impact assessment index provided in an embodiment of the present application. DETAILED DESCRIPTION

[0022] The embodiment of the present application solves the problem in the prior art that it is difficult to accurately and efficiently analyze whether a memory stick is faulty by providing a method for remotely processing a faulty memory stick based on the Internet. Memory stick parameter data is obtained through a client, and the client sends the memory stick parameter data to a server through the Internet. The server analyzes the memory stick fault condition according to the memory stick parameter data, and the server sends the memory stick fault condition to the client through the Internet, so that the client processes the memory stick according to the memory stick fault condition, thereby achieving accurate and efficient analysis of whether the memory stick is faulty and fault processing.

[0023] The technical solution in the embodiment of the present application is to solve the above problem that it is difficult to accurately and efficiently analyze whether a memory module is faulty. The overall idea is as follows: Memory bar parameter data is obtained through the client; the client sends the memory bar parameter data to the server through the Internet; the server analyzes the memory bar fault situation according to the memory bar parameter data: obtains memory direct impact parameter data, obtains memory direct impact evaluation index according to the memory direct impact parameter data, and analyzes the impact of the fault on the capacity and operating frequency of the memory bar according to the memory direct impact evaluation index; obtains memory delay impact parameter data, obtains memory delay impact evaluation index according to the memory delay impact parameter data, and analyzes the impact of the fault on the delay of the memory bar according to the memory delay impact evaluation index; obtains memory pressure flow impact parameter data, obtains memory pressure flow impact evaluation index according to the memory pressure flow impact parameter data, and analyzes the impact of the fault on the voltage and current of the memory bar according to the memory pressure flow impact evaluation index; the server sends the memory bar fault situation to the client through the Internet; the client processes the memory bar according to the memory bar fault situation, thereby achieving the effect of accurately and efficiently analyzing whether the memory bar is faulty.

[0024] In order to better understand the above technical solution, the above technical solution will be described in detail below in conjunction with the accompanying drawings and specific implementation methods.

[0025] like Figure 1 As shown, it is a flow chart of a method for remotely processing a faulty memory stick based on the Internet provided in an embodiment of the present application, the method comprising the following steps: the client obtains memory stick parameter data; the client sends the memory stick parameter data to the server via the Internet; the server analyzes the memory stick fault condition according to the memory stick parameter data; the server sends the memory stick fault condition to the client via the Internet; the client processes the memory stick according to the memory stick fault condition.

[0026] In the present embodiment, the memory stick is one of the core components of the computer, and its stability and performance are crucial to the operation of the entire system. However, memory stick failures often occur. For computer manufacturers, due to the excessive number of computers, it is inevitable that some computers may have memory stick failures, and the traditional memory stick failure repair method usually requires the faulty computer to be brought to a maintenance point, which consumes time and manpower. However, by combining the Internet, it is possible to remotely handle memory stick failures, which not only makes it more convenient to handle memory stick failures, but also improves the speed of handling memory stick failures. Therefore, a method for remotely handling faulty memory sticks based on the Internet has a great market demand. The memory stick failure can be handled remotely through the Internet, which can more conveniently and quickly handle computer failures, not only improving processing efficiency but also saving a part of travel expenses.

[0027] Furthermore, the memory stick failure conditions include: the degree to which the memory stick is affected by the fault in terms of capacity and operating frequency, the degree to which the memory stick is affected by the fault in terms of delay, and the degree to which the memory stick is affected by the fault in terms of voltage and current; the memory stick parameter data includes memory direct impact degree parameter data, memory delay impact degree parameter data, and memory voltage and current impact degree parameter data; the specific analysis process of the degree to which the memory stick is affected by the fault in terms of capacity and operating frequency is: obtaining memory direct impact degree parameter data; deriving a memory direct impact degree assessment index based on the analysis of the memory direct impact degree parameter data, the memory direct impact degree assessment index is used to reflect the degree to which the memory stick is affected by the fault in terms of capacity and operating frequency; analyzing the degree to which the memory stick is affected by the fault in terms of capacity and operating frequency based on the memory direct impact degree assessment index.

[0028] In this embodiment, a memory stick failure may cause a variety of problems in the computer, including but not limited to the following: system instability: a memory stick failure may cause the computer to run unstable, with frequent freezes and automatic restarts; abnormal software operation: when using certain software, if the memory stick fails, it may cause the software to crash, run slowly, or lose data; memory upgrade failure: if you try to upgrade the memory and the memory stick fails, the upgrade may fail and the computer may not recognize the newly installed memory stick; system alarm: certain memory stick failures may trigger the computer's beeping alarm, prompting the user through a specific beeping sequence that the memory is faulty; excessive memory usage: a memory stick failure may cause the system virtual memory to be too high, causing the computer to run slowly.

[0029] In order to avoid the above situation of the computer's memory stick, it is necessary to handle the fault of the computer's memory stick. The client obtains the memory stick parameter data and sends it to the server via the Internet. The server analyzes the degree of impact of the fault on the capacity and operating frequency of the memory stick, the degree of impact of the fault on the delay of the memory stick, and the degree of impact of the fault on the voltage and current of the memory stick based on the memory stick parameter data to obtain the memory stick fault condition. The server sends the memory stick fault condition to the client via the Internet. The client analyzes whether the memory stick is faulty based on the memory stick fault condition and handles it, thereby realizing remote processing of the faulty memory stick.

[0030] The client puts the computer's memory stick into the memory stick performance testing equipment for testing, and obtains the memory direct impact parameter data, which includes the memory stick capacity, the memory stick standard capacity, the memory stick operating frequency and the memory stick standard operating frequency; the memory delay impact parameter data includes the first delay time, the second delay time, the third delay time, the first delay time reference value, the second delay time reference value and the third delay time reference value; the memory voltage-current impact parameter data includes the independent channel voltage, the independent channel current, the independent channel reference voltage and the independent channel reference current.

[0031] Furthermore, the specific method for obtaining the memory direct impact assessment index is as follows: obtaining the number of memory bars and numbering the memory bars; performing multiple data collection on the memory bars, obtaining the number of data collection times, and numbering the number of data collection times; obtaining the weight ratio of the preset memory bar capacity and the memory bar operation frequency from the database; obtaining the memory direct impact parameter data; constructing the memory direct impact assessment index calculation formula according to the memory direct impact parameter data; the specific memory direct impact assessment index calculation formula is: ; In the formula, Expressed as The memory direct impact evaluation index of each memory module, , Indicates the number of the memory bank. Indicates the total number of memory banks. Expressed as The memory stick is in The memory capacity of the data collection , It represents the number of data collection times. It is expressed as the total number of data collection times, Expressed as The memory stick is in The memory bank operating frequency during the data collection, Expressed as The standard capacity of memory sticks is Expressed as The standard operating frequency of the memory modules, It is expressed as the weight ratio of memory capacity in the memory direct impact evaluation index. It is expressed as the weight ratio of the memory module operating frequency in the memory direct impact evaluation index.

[0032] In this embodiment, historical memory direct impact parameter data is obtained, and the relationship between the memory bar capacity, the memory bar operation frequency and the memory direct impact evaluation index is found by analyzing the historical memory direct impact parameter data, and a fitting curve is obtained by using a multiple linear regression method. The fitting effect of the fitting curve is obtained by analyzing the mean square error of the fitting curve, and the fitting curve corresponding to the minimum mean square error is used as a direct fitting curve, and the corresponding weight ratio is obtained by the direct fitting curve. The real-time memory bar capacity and memory bar operation frequency are brought into the direct fitting curve to obtain the weight ratio corresponding to the memory bar capacity and the memory bar operation frequency.

[0033] By querying the computer's task manager to check the memory capacity and performance, you can get the memory stick capacity and memory stick operating frequency. When the computer is operating normally, by querying the computer's task manager to check the memory capacity and performance, you can get the memory stick standard capacity and memory stick standard operating frequency. The memory stick capacity and memory stick operating frequency refer to the real-time capacity and operating frequency of the memory stick, and the memory stick standard capacity and memory stick standard operating frequency refer to the capacity and operating frequency displayed in the memory stick specifications.

[0034] When the operating frequency is reduced, the actual operating frequency of the memory stick is lower than the standard operating frequency, that is, when the operating frequency of the memory stick is less than the standard operating frequency of the memory stick, there may be a problem with the memory stick itself or the motherboard memory controller; when the memory capacity is identified incorrectly, the memory capacity does not match the actual installed memory capacity, that is, when the memory stick capacity is not equal to the standard capacity of the memory stick, there may be a problem with the memory stick or the memory slot. The analysis is conducted from two aspects: the capacity and the operating frequency of the memory stick, and the degree to which the memory stick is affected by the fault in terms of capacity and operating frequency is analyzed in a more comprehensive and detailed manner. In the algorithm of this embodiment, the inverse tangent function is used to analyze the memory direct impact parameter data, and the influence of excessively large or too small abnormal values ​​in the memory direct impact parameter data on the memory direct impact evaluation index is smoothed, so that the memory direct impact evaluation index can be obtained more accurately.

[0035] Furthermore, the specific analysis process of analyzing the degree of impact of the fault on the capacity and operating frequency of the memory stick according to the memory direct impact degree assessment index is as follows: obtain the memory direct impact degree assessment index, obtain the memory direct impact degree threshold, compare the memory direct impact degree assessment index with the memory direct impact degree threshold, when the memory direct impact degree assessment index is greater than the memory direct impact degree threshold, it indicates that the memory stick has not failed in terms of capacity and operating frequency; when in other situations, it indicates that the memory stick has failed in terms of capacity and operating frequency.

[0036] In this embodiment, the historical memory direct impact parameter data is obtained and analyzed to obtain the historical memory direct impact evaluation index, and the memory direct impact threshold is set according to the historical memory direct impact evaluation index to obtain the memory direct impact threshold. The memory direct impact threshold is , The value range of is [0.56, 0.57]. The memory direct impact evaluation index is compared with the memory direct impact threshold. When the memory direct impact evaluation index is greater than the memory direct impact threshold, that is, , it means that the memory module has no fault in terms of capacity and operating frequency; when it is in other situations, that is, , it indicates that the memory module has failed in terms of capacity and operating frequency.

[0037] Furthermore, the specific analysis process of the degree to which the memory stick is affected by the fault in terms of latency is: obtaining memory latency impact parameter data; obtaining a memory latency impact assessment index by analyzing the memory latency impact parameter data, the memory latency impact assessment index being used to express the degree to which the memory stick is affected by the fault in terms of latency; analyzing the degree to which the memory stick is affected by the fault in terms of latency according to the memory latency impact assessment index.

[0038] In this embodiment, the specific method for obtaining the memory delay impact evaluation index is: obtaining the weight ratio of the preset first delay duration, the second delay duration, and the third delay duration from the database; obtaining the memory delay impact parameter data; constructing the memory delay impact evaluation index calculation formula according to the memory delay impact parameter data; the specific memory delay impact evaluation index calculation formula is: ; In the formula, Expressed as The memory latency impact assessment index of each memory bank, Expressed as The memory stick is in The first delay time of the data collection, Expressed as The memory stick is in The second delay time during data collection, Expressed as The memory stick is in The third delay time during data collection, Expressed as The first delay time reference value of each memory module, Expressed as The second delay time reference value of each memory module, Expressed as The third delay time reference value of each memory module, It is expressed as the weight ratio in the memory latency impact evaluation index. It is expressed as the weight ratio in the memory latency impact evaluation index. Expressed as the weight ratio in the memory latency impact evaluation index.

[0039] According to the historical memory delay impact parameter data, a mapping relationship between the first delay duration, the second delay duration, and the third delay duration and the memory delay impact evaluation index is established to obtain a mapping relationship table. According to the real-time first delay duration, the second delay duration, and the third delay duration, the mapping relationship table is queried to obtain the weight ratio of the first delay duration, the second delay duration, and the third delay duration.

[0040] The first delay duration refers to the duration represented by the real-time memory stick completing a complete memory operation cycle, the second delay duration refers to the duration represented by the real-time memory stick recovering to a state that can accept the next command after completing a write operation, and the third delay duration refers to the column activation duration of the real-time memory stick. The first delay duration reference value, the second delay duration reference value, and the third delay duration reference value respectively represent the duration represented by the memory stick completing a complete memory operation cycle under normal operation, the duration represented by the time it takes to recover to a state that can accept the next command after completing a write operation, and the column activation duration.

[0041] When obtaining the parameter data of the memory delay impact degree, enter the BIOS (Basic Input / Output System) setting interface by pressing a specific key when the computer starts up. In the BIOS setting, click "Memory Settings" or "Advanced Memory Settings" to view the timing parameters of the current memory bar and obtain the first delay time, the second delay time, and the third delay time. When the memory bar is operating normally, perform the above operation to obtain the first delay time reference value, the second delay time reference value, and the third delay time reference value.

[0042] For the timing parameters of the memory bar, a faulty memory bar may require a longer cycle time to complete a complete memory operation cycle; after the write operation, the memory requires a certain amount of time to recover to a state that can accept the next command, and a faulty memory bar may require a longer recovery time; the column activation time of the faulty memory bar may be extended because the faulty memory bar may encounter difficulties in locating data. Therefore, by comprehensively analyzing the first delay time, the second delay time, and the third delay time of the memory bar, the degree of impact of the memory bar on the delay can be more accurately analyzed. In the algorithm of this embodiment, the memory delay impact degree evaluation index is obtained by performing a nonlinear transformation on the memory delay impact degree parameter data using an exponential function, so that the very large or very small values ​​in the memory delay impact degree parameter data reduce the impact of the memory delay impact degree evaluation index, and at the same time make the change of the memory delay impact degree evaluation index more obvious, which is conducive to more accurately analyzing the degree of impact of the memory bar on the delay according to the memory delay impact degree evaluation index.

[0043] Furthermore, the specific analysis process of analyzing the degree of impact of the memory stick on delay based on the memory delay impact assessment index is as follows: obtaining the memory delay impact assessment index, obtaining the memory delay impact threshold, comparing the memory delay impact assessment index with the memory delay impact threshold, when the memory delay impact assessment index is less than the memory delay impact threshold, it indicates that the memory stick has not failed in terms of delay; when in other situations, it indicates that the memory stick has failed in terms of delay.

[0044] In this embodiment, historical memory delay impact parameter data is obtained and a historical memory delay impact evaluation index is obtained. A memory delay impact threshold is set according to the historical memory delay impact evaluation index to obtain the memory delay impact threshold. The memory delay impact threshold is expressed as , The value range of is [1.42, 1.43]. The memory delay impact evaluation index is compared with the memory delay impact threshold. When the memory delay impact evaluation index is less than the memory delay impact threshold, that is, When the memory module is in the state of delay, it indicates that the memory module has no fault in terms of latency; when it is in other conditions, that is, , it indicates that the memory module has failed in terms of latency.

[0045] Furthermore, the specific analysis process of the degree to which the memory stick is affected by the fault in terms of voltage and current is: obtaining memory voltage-current impact degree parameter data; analyzing the memory voltage-current impact degree parameter data to obtain a memory voltage-current impact degree evaluation index, the memory voltage-current impact degree evaluation index is used to reflect the degree to which the memory stick is affected by the fault in terms of voltage and current; analyzing the degree to which the memory stick is affected by the fault in terms of voltage and current based on the memory voltage-current impact degree evaluation index.

[0046] In this embodiment, the specific method for obtaining the memory pressure flow impact evaluation index is as follows: obtaining the number of independent channels of the memory stick and numbering the independent channels; obtaining the preset weight ratio of the independent channel voltage and the independent channel current from the database; obtaining the memory pressure flow impact parameter data; constructing the memory pressure flow impact evaluation index calculation formula according to the memory pressure flow impact parameter data; the specific memory pressure flow impact evaluation index calculation formula is: ; In the formula, Expressed as The memory pressure flow impact assessment index of each memory bank, Expressed as Memory stick No. Independent channels in The independent channel voltage during data acquisition, , Indicates the number of an independent channel. Expressed as the total number of independent channels, Expressed as Memory stick No. Independent channels in Independent channel current during data acquisition, Expressed as Memory stick No. Independent channel reference voltage for each independent channel, Expressed as Memory stick No. Independent channel reference current for each independent channel, It is expressed as the weight ratio of the independent channel voltage in the memory voltage-current impact evaluation index. It is expressed as the weight ratio of the independent channel current in the memory pressure-current impact evaluation index. Expressed as a natural constant.

[0047] According to the historical memory voltage and current impact parameter data, the mapping relationship between the independent channel voltage and the independent channel current and the memory voltage and current impact evaluation index is established to obtain a mapping relationship table. According to the real-time independent channel voltage and independent channel current, the mapping relationship table is queried to obtain the weight ratio of the independent channel voltage and the independent channel current.

[0048] The real-time voltage and current of the independent channel of the memory stick are measured by a multimeter, that is, the independent channel voltage and the independent channel current are obtained. When the memory stick operates normally, the multimeter is used to measure and obtain the independent channel reference voltage and the independent channel reference current.

[0049] When a memory module fails, the voltage and current of the independent channel may change as follows: Abnormal voltage: Voltage fluctuation: The voltage of the memory module may be unstable or fluctuate, which may be due to power supply problems or a failure of the memory module itself; Low or high voltage: If the voltage is lower than the specification requirements, the memory module may not work properly; If the voltage is too high, the memory particles may be damaged; Abnormal current: Increased current: In some fault conditions, the current consumption of the memory module may suddenly increase. This may be because the memory module is trying to correct an error or due to an internal short circuit; Reduced current: If part of the channel of the memory module fails completely, the current consumption of the channel may decrease; Unstable current: The memory module may show unstable current in the fault state, and this fluctuation may affect the stability of the system. Therefore, by analyzing the independent channel voltage and independent channel current to obtain the memory voltage and current impact assessment index, the memory voltage and current impact assessment index is considered more comprehensive and specific, which is conducive to obtaining a more accurate memory voltage and current impact assessment index.

[0050] In the algorithm of this embodiment, the memory pressure flow influence degree evaluation index is obtained by performing a nonlinear transformation on the memory pressure flow influence degree parameter data using a hyperbolic tangent function, thereby reducing the influence of extreme values ​​in the memory pressure flow influence degree parameter data on the memory pressure flow influence degree evaluation index, which is conducive to obtaining a more accurate memory pressure flow influence degree evaluation index.

[0051] In a specific embodiment, Figure 2 As shown, it is a memory pressure flow impact degree evaluation index curve provided by an embodiment of the present application, with independent channel voltage as the independent variable and memory pressure flow impact degree evaluation index as the dependent variable. For example, when acquiring data for the second memory stick, the second memory stick has an independent channel. Through the increase and decrease analysis of curve one, curve two and curve three, it can be known that when the independent channel voltage is larger, the memory pressure flow impact degree evaluation index is larger; when the independent channel voltage is smaller, the memory pressure flow impact degree evaluation index is smaller. The statistical table of memory pressure flow impact degree evaluation index related data is shown in Table 1: Table 1 Statistical table of relevant data of memory pressure flow impact evaluation index

[0052] When the independent channel currents of curve 1, curve 2 and curve 3 are 0.30mA, 0.50mA and 0.90mA respectively, and other parameters are consistent, the memory voltage-current impact evaluation indexes of curve 1, curve 2 and curve 3 are 0.93, 0.92 and 0.90 respectively. It can be seen that when the independent channel voltage is consistent with other parameters, the larger the independent channel reference current, the smaller the memory voltage-current impact evaluation index.

[0053] Furthermore, the specific analysis process of analyzing the degree of influence of the fault on the voltage and current of the memory stick according to the memory pressure-flow influence degree evaluation index is as follows: obtaining the memory pressure-flow influence degree evaluation index, obtaining the memory pressure-flow influence first threshold and the memory pressure-flow influence second threshold, comparing the memory pressure-flow influence degree evaluation index with the memory pressure-flow influence first threshold and the memory pressure-flow influence second threshold, when the memory pressure-flow influence degree evaluation index is greater than the memory pressure-flow influence first threshold and less than the memory pressure-flow influence second threshold, it indicates that the memory stick has not failed in terms of voltage and current; when in other situations, it indicates that the memory stick has failed in terms of voltage and current.

[0054] In this embodiment, historical memory pressure flow impact parameter data is obtained and a historical memory pressure flow impact evaluation index is obtained. A first memory pressure flow impact threshold and a second memory pressure flow impact threshold are set according to the historical memory pressure flow impact evaluation index. The first memory pressure flow impact threshold and the second memory pressure flow impact threshold are obtained. The first memory pressure flow impact threshold and the second memory pressure flow impact threshold are respectively and , The value range of is [0.72, 0.73], The value range of is [0.81, 0.82]. The memory pressure flow impact evaluation index is compared with the first memory pressure flow impact threshold and the second memory pressure flow impact threshold. When the memory pressure flow impact evaluation index is greater than the first memory pressure flow impact threshold and less than the second memory pressure flow impact threshold, that is, When the voltage and current of the memory module are not faulty, it indicates that the memory module has no faults. When it is on, it indicates that the memory module has a voltage or current failure.

[0055] Furthermore, the specific analysis process of the client processing the memory stick according to the memory stick failure is: when one or more of the memory stick fails in capacity and operating frequency, fails in latency, and fails in voltage and current, it indicates that the memory stick fails and the memory stick is processed; when it is in other situations, it indicates that the memory stick does not fail and the memory stick is not processed.

[0056] In this embodiment, when the memory stick fails in any one of the following situations: the memory stick fails in capacity and operating frequency, the memory stick fails in latency, and the memory stick fails in voltage and current, it indicates that the memory stick fails and needs to be processed.

[0057] Furthermore, processing the memory stick specifically includes: cleaning the memory slot of the memory stick, trying to remove other hardware devices, restoring the BIOS to factory settings, updating the operating system, and replacing the memory stick.

[0058] In this embodiment, the method for processing the memory bar is not only as shown in the above content, when the memory bar fails, it can be processed in a variety of ways. For example, the processing method for slow system operation or long response time is: after entering the system, check the memory usage in the task manager to see if there is a memory leak; use a memory detection tool (such as the Windows memory diagnostic tool) to detect; reduce the number of programs loaded at startup, and clean up unnecessary background programs; the processing method for blue screen errors is: pay attention to the blue screen error code, which usually has information about the faulty memory address; check the system log in the event viewer to find the specific cause of the failure; use a memory detection tool for detailed Detect; update or reinstall the memory stick driver (if any); the solution when the system prompts insufficient memory is: close unnecessary programs and services to free up memory; add physical memory sticks; check whether virtual memory is enabled and make sure it is set properly; the solution for data corruption or program crash is: confirm the compatibility of the memory stick and whether the frequency setting is correct; run memory testing software for a long time; update the operating system and driver to the latest version; the solution for continuous beeps when the computer starts is: continuous beeps are usually an error prompt from the motherboard, look for the beep code according to the motherboard manual; usually continuous beeps represent memory problems, try the above-mentioned solutions for memory failures.

[0059] The technical solution in the above-mentioned embodiment of the present application has at least the following technical effects or advantages: memory bar parameter data is obtained through the client, the client sends the memory bar parameter data to the server through the Internet, the server analyzes the memory bar fault condition according to the memory bar parameter data, and the server sends the memory bar fault condition to the client through the Internet, so that the client processes the memory bar according to the memory bar fault condition, thereby realizing accurate and efficient analysis of whether the memory bar is faulty and performing fault processing, effectively solving the problem in the prior art that it is difficult to accurately and efficiently analyze whether the memory bar is faulty.

[0060] It will be appreciated by those skilled in the art that embodiments of the present invention may be provided as methods, systems, or computer program products. Therefore, the present invention may take the form of a complete hardware embodiment, a complete software embodiment, or an embodiment combining software and hardware. Furthermore, the present invention may take the form of a computer program product implemented on one or more computer-usable storage media (including but not limited to disk storage, CD-ROM, optical storage, etc.) containing computer-usable program code.

[0061] The present invention is described with reference to flowcharts and / or block diagrams of methods, devices (systems), and computer program products according to embodiments of the present invention. It should be understood that each process and / or block in the flowchart and / or block diagram, as well as the combination of processes and / or blocks in the flowchart and / or block diagram, can be implemented by computer program instructions. These computer program instructions can be provided to a processor of a general-purpose computer, a special-purpose computer, an embedded processor, or other programmable data processing device to produce a machine, so that the instructions executed by the processor of the computer or other programmable data processing device generate instructions for implementing the processes in the flowchart and / or block diagram. Figure 1 A process or multiple processes and / or boxes Figure 1 A device that provides the functions specified in a block or multiple blocks.

[0062] These computer program instructions may also be stored in a computer-readable memory capable of directing a computer or other programmable data processing device to operate in a specific manner, so that the instructions stored in the computer-readable memory produce an article of manufacture comprising an instruction device, which implements the process Figure 1 A process or multiple processes and / or boxes Figure 1 A function specified in one or more boxes.

[0063] These computer program instructions can also be loaded onto a computer or other programmable data processing device so that a series of operating steps are executed on the computer or other programmable device to produce a computer-implemented process, thereby providing instructions for implementing the process. Figure 1 A process or multiple processes and / or boxes Figure 1 The steps for the functions specified in one or more boxes.

[0064] Although the preferred embodiments of the present invention have been described, those skilled in the art may make other changes and modifications to these embodiments once they have learned the basic creative concept. Therefore, the appended claims are intended to be interpreted as including the preferred embodiments and all changes and modifications that fall within the scope of the present invention.

[0065] Obviously, those skilled in the art can make various changes and modifications to the present invention without departing from the spirit and scope of the present invention. Thus, if these modifications and variations of the present invention fall within the scope of the claims of the present invention and their equivalents, the present invention is also intended to include these modifications and variations.

Claims

1. A method for remotely processing a faulty memory stick based on the Internet, characterized in that: The following steps are involved: The client obtains memory bar parameter data; The client sends the memory bar parameter data to the server via the Internet; The server analyzes the memory bar fault condition based on the memory bar parameter data; The server sends the memory module failure status to the client via the Internet; The client processes the memory stick according to the memory stick fault condition; The memory bar fault conditions include: the degree to which the memory bar is affected by the fault in terms of capacity and operating frequency, the degree to which the memory bar is affected by the fault in terms of latency, and the degree to which the memory bar is affected by the fault in terms of voltage and current; The memory bar parameter data includes memory direct impact parameter data, memory delay impact parameter data and memory pressure flow impact parameter data; The specific analysis process of the memory module's capacity and operating frequency being affected by the fault is as follows: Get memory direct impact parameter data; deriving a memory direct impact degree evaluation index according to the memory direct impact degree parameter data analysis, wherein the memory direct impact degree evaluation index is used to reflect the degree to which the memory bar is affected by the fault in terms of capacity and operating frequency; Analyze the impact of the fault on the capacity and operating frequency of the memory module based on the memory direct impact assessment index; The specific method for obtaining the memory direct impact evaluation index is: Get the number of memory bars and number the memory bars; Perform multiple data collection on the memory bar, obtain the number of data collection times, and number the number of data collection times; Obtaining a preset weight ratio of the memory bar capacity and the memory bar operating frequency from a database; Get memory direct impact parameter data; According to the memory direct impact degree parameter data, a calculation formula for the memory direct impact degree evaluation index is constructed; The specific calculation formula for the memory direct impact evaluation index is: ； In the formula, Expressed as The memory direct impact evaluation index of each memory module, , Indicates the number of the memory bank. Indicates the total number of memory banks. Expressed as The memory stick is in The memory capacity of the data collection , It represents the number of data collection times. It is expressed as the total number of data collection times, Expressed as The memory stick is in The memory bank operating frequency during the data collection, Expressed as The standard capacity of memory sticks is Expressed as The standard operating frequency of the memory modules, It is expressed as the weight ratio of memory capacity in the memory direct impact evaluation index. It is expressed as the weight ratio of the memory module operating frequency in the memory direct impact evaluation index.

2. A method for remotely processing a faulty memory stick based on the Internet as claimed in claim 1, characterized in that: The specific analysis process of analyzing the impact of the fault on the capacity and operating frequency of the memory bar according to the memory direct impact assessment index is as follows: Obtain a memory direct impact assessment index, obtain a memory direct impact threshold, and compare the memory direct impact assessment index with the memory direct impact threshold. When the memory direct impact assessment index is greater than the memory direct impact threshold, it indicates that the memory bar is not faulty in terms of capacity and operating frequency. In other cases, it means that the memory module has failed in terms of capacity and operating frequency.

3. A method for remotely processing a faulty memory stick based on the Internet as claimed in claim 1, characterized in that: The specific analysis process of the degree to which the memory bar is affected by the fault in terms of latency is as follows: Get memory latency impact parameter data; A memory delay impact degree evaluation index is obtained by analyzing the memory delay impact degree parameter data, wherein the memory delay impact degree evaluation index is used to express the degree to which the memory bar is affected by the fault in terms of delay; The memory latency impact assessment index is used to analyze the impact of the failure on the latency of the memory module.

4. A method for remotely processing a faulty memory stick based on the Internet as claimed in claim 1, characterized in that: The specific analysis process of analyzing the impact degree of the failure on the latency of the memory bar according to the memory latency impact evaluation index is as follows: Obtain a memory delay impact assessment index, obtain a memory delay impact threshold, and compare the memory delay impact assessment index with the memory delay impact threshold. When the memory delay impact assessment index is less than the memory delay impact threshold, it indicates that the memory bar has no failure in terms of latency. In other cases, it means that the memory module fails in terms of latency.

5. The method for remotely processing a faulty memory stick based on the Internet as claimed in claim 1, characterized in that: The specific analysis process of the memory module's voltage and current being affected by the fault is as follows: Get the memory pressure flow impact parameter data; deriving a memory pressure-current impact degree evaluation index according to memory pressure-current impact degree parameter data analysis, wherein the memory pressure-current impact degree evaluation index is used to reflect the degree to which the memory bar is affected by the fault in terms of voltage and current; The memory voltage and current impact assessment index is used to analyze the impact of the fault on the voltage and current of the memory module.

6. A method for remotely processing a faulty memory stick based on the Internet as claimed in claim 5, characterized in that: The specific analysis process of analyzing the impact degree of the fault on the voltage and current of the memory bar according to the memory voltage and current impact degree evaluation index is as follows: Obtain a memory pressure flow impact degree assessment index, obtain a memory pressure flow impact first threshold and a memory pressure flow impact second threshold, compare the memory pressure flow impact degree assessment index with the memory pressure flow impact first threshold and the memory pressure flow impact second threshold, when the memory pressure flow impact degree assessment index is greater than the memory pressure flow impact first threshold and less than the memory pressure flow impact second threshold, it indicates that the memory bar has no fault in terms of voltage and current; In other cases, it means that the memory module has failed in terms of voltage and current.

7. A method for remotely processing a faulty memory stick based on the Internet as claimed in claim 1, characterized in that: The specific analysis process of the client processing the memory bar according to the memory bar failure is as follows: When one or more of the following situations occur: the memory module fails in capacity and operating frequency, the memory module fails in latency, or the memory module fails in voltage and current, it indicates that the memory module fails and needs to be processed. In other cases, it indicates that the memory module is not faulty and no processing is performed on the memory module.

8. The method for remotely processing a faulty memory stick based on the Internet as claimed in claim 1, characterized in that: The processing of the memory stick specifically includes: cleaning the memory slot of the memory stick, trying to remove other hardware devices, restoring BIOS to factory settings, updating the operating system, and replacing the memory stick.

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