Method, device and equipment for judging spiral growth during the growth of gallium oxide single crystal

Abstract

The present application provides a method, device and equipment for judging spiral growth during the growth of a gallium oxide single crystal, and relates to the field of single crystal growth technology. The method comprises: establishing a geometric model according to structural information of a gallium oxide single crystal growth system; performing computational grid division on each region in the geometric model, setting boundary conditions and control equations corresponding to the computational grid in the geometric model, and obtaining a heat transfer flow numerical model; simulating the heat transfer flow process of gallium oxide under current growth parameters based on the heat transfer flow numerical model, and obtaining simulation results; the simulation results comprise: flow field information of a gallium oxide melt region in a crucible during crystal growth; and determining whether spiral growth will occur in gallium oxide prepared under the current growth parameters according to the eddy current distribution in the gallium oxide melt region in the simulation results.

Description

Technical Field

[0001] The present application relates to the technical field of single crystal growth, and in particular to a method, device and equipment for judging spiral growth during the growth of a gallium oxide single crystal. Background Art

[0002] As a fourth-generation semiconductor material, gallium oxide is an indispensable semiconductor material in the fields of aerospace and aviation. However, due to the low thermal conductivity and transparency of gallium oxide, spiral growth and other phenomena often occur during the industrial growth of gallium oxide single crystals using the Czochralski method. Spiral growth during the growth of gallium oxide single crystals will lead to spiral dislocations inside the crystal, change the distribution of molecules in the crystal, and then cause the quality of the grown crystal to deteriorate, which cannot meet the requirements of industrial production.

[0003] At present, the main method is to change the process parameters through experiments to avoid the spiral growth of gallium oxide in actual production, but the above method is time-consuming and labor-intensive. Therefore, it is urgent to propose a method, device and equipment for judging the spiral growth during the growth of gallium oxide single crystals, so as to quickly and accurately judge whether spiral growth will occur during the growth of gallium oxide single crystals, and provide theoretical guidance for growing high-quality gallium oxide single crystals. Summary of the invention

[0004] In view of the above problems, the embodiments of the present application provide a method, device and apparatus for determining spiral growth during the growth of a gallium oxide single crystal, so as to overcome the above problems or at least partially solve the above problems.

[0005] In a first aspect of an embodiment of the present application, a method for determining spiral growth during the growth of a gallium oxide single crystal is provided, the method comprising:

[0006] A geometric model is established based on the structural information of the gallium oxide single crystal growth system;

[0007] Performing computational mesh division on each region in the geometric model, setting boundary conditions and control equations corresponding to the computational mesh in the geometric model, and obtaining a heat transfer flow numerical model;

[0008] Based on the heat transfer flow numerical model, the heat transfer flow process of gallium oxide under the current growth parameters is simulated to obtain simulation results; the simulation results include: flow field information of the gallium oxide melt region in the crucible during the crystal growth process;

[0009] According to the eddy current distribution in the gallium oxide melt region in the simulation result, it is determined whether the gallium oxide prepared under the current growth parameters will undergo spiral growth.

[0010] In a possible implementation, determining whether the gallium oxide prepared under the current growth parameters will undergo spiral growth according to the eddy current distribution in the gallium oxide melt region in the simulation result includes:

[0011] Determining whether a vortex occurs in the central region of the growth interface according to the velocity magnitude and direction at each calculation grid in the gallium oxide melt region in the simulation results;

[0012] In the case where no eddy current occurs in the central region, it is determined that the gallium oxide prepared under the current growth parameters will not undergo spiral growth;

[0013] Determining whether an eddy current appears in the outer edge region of the growth interface according to the velocity magnitude and direction at each calculation grid in the gallium oxide melt region in the simulation results;

[0014] In the case where no eddy current occurs in the outer edge region, it is determined that the gallium oxide prepared under the current growth parameters will undergo spiral growth;

[0015] In the case where eddies appear in both the central region and the outer region, determining the position of a stagnation point; the stagnation point is a point where the velocity of the boundary region between the eddies in the central region and the eddies in the outer region is zero;

[0016] According to the position of the stagnation point, it is determined whether the gallium oxide prepared under the current growth parameters will undergo spiral growth.

[0017] In a possible implementation, determining whether the gallium oxide prepared under the current growth parameters will undergo spiral growth according to the position of the stagnation point includes:

[0018] Determining a first distance according to the position of the stagnation point, wherein the first distance is a vertical distance between the stagnation point and a growth center axis of the gallium oxide single crystal;

[0019] Determining a second distance according to the position of the triple point, wherein the second distance is a vertical distance between the triple point and a growth center axis of the gallium oxide single crystal;

[0020] Whether the gallium oxide prepared under the current growth parameters will undergo spiral growth is determined according to whether the ratio of the first distance to the second distance exceeds a preset threshold.

[0021] In a possible implementation manner, the preset threshold is 1, and determining whether spiral growth will occur in gallium oxide prepared under the current growth parameters according to whether the ratio of the first distance to the second distance exceeds the preset threshold includes:

[0022] When the ratio of the first distance to the second distance is less than 1, determining that the gallium oxide prepared under the current growth parameters will not undergo spiral growth;

[0023] When the ratio of the first distance to the second distance is greater than or equal to 1, it is determined that the gallium oxide prepared under the current growth parameters will undergo spiral growth.

[0024] In a possible implementation, the control equation at least includes a heat transfer flow control equation, and the heat transfer flow control equation includes a heat transfer flow control equation for a gallium oxide melt region:

[0025] Continuity equation: ;

[0026] Momentum equation: ;

[0027] Energy equation: ;

[0028] in, It means to find the gradient; Indicates speed; represents the reference density of gallium oxide melt; t represents time, p represents pressure, represents dynamic viscosity; represents the thermal expansion coefficient; T represents the temperature at the calculation grid; Indicates the reference temperature; represents the acceleration due to gravity, represents the density of gallium oxide melt; represents specific heat capacity; represents thermal conductivity; Indicates a heat source.

[0029] In a possible implementation, the method further includes:

[0030] If it is determined that the gallium oxide prepared under the current growth parameters will undergo spiral growth, modifying the current growth parameters;

[0031] Based on the modified current growth parameters, it is re-determined whether spiral growth will occur in gallium oxide.

[0032] In a possible implementation manner, the current growth parameter is at least one of the following: heating power, crucible rotation speed, crystal rotation speed, and structural information of the gallium oxide single crystal growth system.

[0033] In a possible implementation, when it is determined that the gallium oxide prepared under the current growth parameters will undergo spiral growth, modifying the current growth parameters; and re-determining whether the gallium oxide will undergo spiral growth based on the modified current growth parameters, includes:

[0034] Determining a basic modification amount of the current growth parameter for this modification according to a difference between a ratio of the first distance to the second distance and the preset threshold;

[0035] Based on the basic modification amount of the current growth parameter, the current growth parameter is modified to obtain a modified first growth parameter and a second growth parameter; the first growth parameter represents a growth parameter obtained by adding the basic modification amount to the current growth parameter, and the second growth parameter represents a growth parameter obtained by reducing the basic modification amount to the current growth parameter;

[0036] Resimulating the heat transfer flow process of gallium oxide based on the first growth parameter and the second growth parameter respectively, comparing the obtained simulation results with the simulation results before modifying the current growth parameters, and determining the parameter modification direction, wherein the parameter modification direction is to increase the growth parameter or to decrease the growth parameter;

[0037] recalculating the difference between the ratio of the first distance to the second distance after the growth parameter is modified and the preset threshold, and determining the modification amount of the growth parameter for the next round according to the recalculated difference;

[0038] According to the parameter modification direction and according to the modification amount of the growth parameters in the next round, the growth parameters are continuously modified, and the heat transfer flow process of gallium oxide is simulated again according to the modified growth parameters to obtain new simulation results;

[0039] When the difference calculated according to the new simulation result exceeds the preset threshold, the next round of growth parameter modification is performed in accordance with the parameter modification direction until the difference finally calculated does not exceed the preset threshold, and the growth parameter modification is terminated, and the growth parameters used in the last round are determined as the optimal growth parameters.

[0040] The second aspect of the embodiment of the present application further provides a device for judging spiral growth during the growth of a gallium oxide single crystal, which is used to execute the method for judging spiral growth during the growth of a gallium oxide single crystal according to the first aspect of the embodiment of the present application, and the device comprises:

[0041] A geometric model building module is used to build a geometric model based on the structural information of the gallium oxide single crystal growth system;

[0042] A numerical module construction module is used to divide the computational grids of various regions in the geometric model, set the boundary conditions and control equations of the corresponding computational grids in the geometric model, and obtain a heat transfer flow numerical model;

[0043] A numerical simulation module is used to simulate the heat transfer flow process of gallium oxide under current growth parameters based on the heat transfer flow numerical model to obtain simulation results; the simulation results include: flow field information of the gallium oxide melt region in the crucible during the crystal growth process;

[0044] The judgment module is used to determine whether the gallium oxide prepared under the current growth parameters will undergo spiral growth according to the eddy current distribution in the gallium oxide melt region in the simulation result.

[0045] A third aspect of an embodiment of the present application further provides an electronic device, including a memory, a processor, and a computer program stored on the memory, wherein the processor executes the computer program to implement the steps in the method for determining spiral growth during the growth of a gallium oxide single crystal as described in the first aspect of an embodiment of the present application.

[0046] The fourth aspect of the embodiments of the present application further provides a computer-readable storage medium having a computer program / instruction stored thereon. When the computer program / instruction is executed by a processor, the steps of the method for determining spiral growth during the growth of a gallium oxide single crystal described in the first aspect of the embodiments of the present application are implemented.

[0047] The fifth aspect of the embodiments of the present application further provides a computer program product. When the computer program product is run on an electronic device, the processor is enabled to implement the steps in the method for determining spiral growth during the growth of a gallium oxide single crystal as described in the first aspect of the embodiments of the present application.

[0048] An embodiment of the present application provides a method for judging spiral growth during the growth of a gallium oxide single crystal. The method comprises: establishing a geometric model according to structural information of a gallium oxide single crystal growth system; performing computational grid division on each region in the geometric model, setting boundary conditions and control equations corresponding to the computational grid in the geometric model, and obtaining a heat transfer flow numerical model; simulating the heat transfer flow process of gallium oxide under current growth parameters based on the heat transfer flow numerical model to obtain simulation results; the simulation results comprise: flow field information of a gallium oxide melt region in a crucible during crystal growth; and determining whether spiral growth will occur in gallium oxide prepared under the current growth parameters according to the eddy current distribution in the gallium oxide melt region in the simulation results.

[0049] The specific beneficial effects are:

[0050] The embodiment of the present application establishes a numerical calculation model to simulate the heat transfer flow process of gallium oxide under the current growth parameters, thereby determining the eddy current distribution in the gallium oxide melt region based on the flow field information of the gallium oxide melt region in the simulation results (the velocity magnitude and direction at each calculation grid). Finally, based on the eddy current distribution, it is determined whether spiral growth will occur in gallium oxide under the current growth parameters. The embodiment of the present application realizes accurate judgment of whether spiral growth occurs in the growth process of gallium oxide single crystals through numerical simulation, and helps determine more optimal process parameters to ensure the quality of single crystals. BRIEF DESCRIPTION OF THE DRAWINGS

[0051] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings required for use in the description of the embodiments of the present application will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative labor.

[0052] Figure 1 It is a flowchart of the steps of a method for determining spiral growth during the growth of a gallium oxide single crystal provided in an embodiment of the present application;

[0053] Figure 2 is a schematic diagram of an eddy current distribution provided in an embodiment of the present application;

[0054] Figure 3 It is a structural schematic diagram of a device for judging spiral growth during the growth of a gallium oxide single crystal provided in an embodiment of the present application;

[0055] Figure 4 It is a schematic diagram of an electronic device provided in an embodiment of the present application. DETAILED DESCRIPTION

[0056] The exemplary embodiments of the present application will be described in more detail below in conjunction with the accompanying drawings in the embodiments of the present application. Although the exemplary embodiments of the present application are shown in the accompanying drawings, it should be understood that the present application can be implemented in various forms and should not be limited by the embodiments set forth herein. On the contrary, these embodiments are provided in order to enable a more thorough understanding of the present application and to enable the scope of the present application to be fully communicated to those skilled in the art.

[0057] As a fourth-generation semiconductor material, gallium oxide has a large bandgap, high breakdown field strength, and the ability to absorb ultraviolet light of a specific wavelength. It is widely used in high-power electronic devices and deep ultraviolet optoelectronic devices, and is an indispensable semiconductor material in the fields of aerospace and aviation. However, due to the low thermal conductivity and transparency of gallium oxide (which causes both gallium oxide crystals and melts to participate in radiation), spiral growth and other phenomena often occur during the industrial growth of gallium oxide single crystals by the Czochralski method.

[0058] Spiral growth during the growth of gallium oxide single crystals will lead to spiral dislocations inside the crystals, changing the distribution of molecules in the crystals, and thus causing the quality of the grown crystals to deteriorate and fail to meet the requirements of industrial production. Currently, experimental methods are often used in industry to reduce spiral growth, but the use of experimental methods to continuously change growth conditions and structural dimensions to reduce the spiral growth phenomenon that occurs during the Czochralski method of growing gallium oxide single crystals is very time-consuming and labor-intensive. As for the method of guiding specific industrial experiments through numerical simulation and theoretical calculation, since the mechanism of spiral growth is not very clear at present, it is impossible to accurately simulate and judge whether spiral growth will occur under a certain state in numerical calculations.

[0059] In view of the above problems, the embodiments of the present application propose a method, device and equipment for judging spiral growth during the growth of a gallium oxide single crystal, so as to accurately judge whether spiral growth will occur, so as to guide further optimization of subsequent processes. In combination with the accompanying drawings, the following describes in detail a method, device and equipment for judging spiral growth during the growth of a gallium oxide single crystal provided by the embodiments of the present application through some embodiments and their application scenarios.

[0060] The first aspect of the present application provides a method for determining spiral growth during the growth of a gallium oxide single crystal, referring to Figure 1 , Figure 1 A flow chart of the steps of a method for determining spiral growth during the growth of a gallium oxide single crystal provided in an embodiment of the present application is shown in FIG. Figure 1 As shown, the method includes:

[0061] Step S101, establishing a geometric model according to the structural information of the gallium oxide single crystal growth system.

[0062] In the embodiment of the present application, the gallium oxide single crystal is prepared by the pulling method, and the gallium oxide single crystal growth system represents any system that can be used to prepare gallium oxide by the pulling method, wherein the structural information of the gallium oxide single crystal growth system can be information such as the size and position of each component in the system. The embodiment of the present application does not limit the specific structure and size parameters of the gallium oxide single crystal growth system. Exemplarily, the gallium oxide single crystal growth system includes at least the following components: 1. Gallium oxide melt; 2. Crucible; 3. Side support. The crucible is located at the center of the system, and the crucible is filled with gallium oxide melt. The side support is located on the side of the crucible to play a supporting role. According to the structural information of the gallium oxide single crystal growth system (including the structure and size parameters of each component, etc.), the structure of the gallium oxide single crystal growth system is geometrically modeled using modeling software to obtain a corresponding geometric model.

[0063] Step S102, performing computational mesh division on each region in the geometric model, setting boundary conditions and control equations of the computational mesh corresponding to the geometric model, and obtaining a heat transfer flow numerical model.

[0064] Specifically, after the geometric model is constructed, the geometric model is divided into computational grids, including the computational grid division of the gallium oxide melt region in the geometric model. Specifically, the more computational grids are divided, the more accurate the result obtained by numerical calculation, and the number of computational grids can be determined according to the actual amount of computational resources.

[0065] The boundary conditions of the corresponding computational grid in the geometric model are set. Specifically, the boundary conditions of the interface between the solid and the gas, the interface between the melt and the gas, the interface between the solid and the melt, and the interface between the crystal and the melt are defined. Specifically, the boundary conditions in the embodiment of the present application include:

[0066] The boundary condition of the interface between solid and gas adopts no-slip boundary condition, and the temperature adopts coupled boundary condition, including:

[0067] No-slip boundary condition: ;

[0068] Coupled boundary conditions: ;

[0069] ;

[0070] in, Represents the normal vector; subscript represents the tangential direction, subscript n represents the normal direction, subscript s represents solid, and subscript g represents gas; represents the tangential velocity of the computational grid on the solid side; represents the tangential velocity of the computational grid on the gas side; represents the normal velocity of the computational grid on the solid side; represents the normal velocity of the computational grid on the gas side; represents the normal temperature gradient on the solid side; represents the normal temperature gradient on the gas side; It represents the amount of heat radiated through the gas; Indicates speed; represents thermal conductivity; T represents temperature; It means to find the gradient.

[0071] Boundary conditions at the melt-gas interface:

[0072] Velocity boundary conditions:

[0073] ;

[0074] ;

[0075] Temperature boundary conditions:

[0076] ;

[0077] in, Indicates tangential direction; represents the normal vector; represents velocity (vector); subscript m represents melt; subscript g represents gas; represents the normal velocity of the computational grid on the melt side; represents the normal velocity of the computational grid on the gas side; represents the tangential velocity of the computational grid on the melt side; represents the tangential velocity of the computational grid on the gas side; represents the normal temperature gradient on the gas side; represents the normal temperature gradient on the melt side; Represents the amount of heat radiated through a gas; Represents the amount of heat radiated through the melt; represents dynamic viscosity; T represents temperature; Indicates the surface tension coefficient N / m; represents thermal conductivity; represents the gradient. Among them, represents the surface tension gradient, with a value of -3.5×10 -5 .

[0078] The boundary conditions at the interface between the crystal and the melt include:

[0079] The velocity boundary condition is still a no-slip boundary condition: ;

[0080] Temperature boundary conditions:

[0081] ;

[0082] in, represents the normal vector; subscript m represents the melt; subscript c represents the crystal; represents the tangential velocity of the computational grid on the crystal side; represents the tangential velocity of the computational grid on the melt side; represents the normal velocity of the computational grid on the crystal side; represents the normal velocity of the computational grid on the melt side; represents the normal temperature gradient on the crystal side; represents the normal temperature gradient on the melt side; represents the amount of heat radiated through the crystal; represents the heat radiated by the melt; T represents the temperature; represents thermal conductivity; It means to find the gradient.

[0083] The boundary conditions at the interface between the solid and the melt include:

[0084] The velocity boundary condition is still a no-slip boundary condition: ;

[0085] Temperature boundary conditions:

[0086] ;

[0087] in, Indicates radial direction; represents the normal vector; subscript m represents melt; subscript s represents solid; represents the tangential velocity of the computational grid on the solid side; represents the tangential velocity of the computational grid on the melt side; represents the normal velocity of the computational grid on the solid side; represents the normal velocity of the computational grid on the melt side; represents the normal temperature gradient on the solid side; represents the normal temperature gradient on the melt side; T represents the temperature; represents thermal conductivity; It means to find the gradient; Represents the amount of heat radiated through the melt.

[0088] In this embodiment, in addition to setting boundary conditions for the geometric model, it is also necessary to set the heat transfer flow control equations (control equations in the heat transfer flow process) corresponding to each component and each region in the geometric model. For example: the heat transfer flow control equations satisfied by the melt-crystal region in the geometric model, the heat transfer flow control equations satisfied by the gas region in the geometric model, etc. Among them, the heat transfer flow control equations are used to solve the thermal field information (such as temperature) and flow field information (such as velocity) of each calculation grid in the geometric model under specific conditions (current growth parameters).

[0089] In a possible implementation manner, the heat transfer flow control equation includes the heat transfer flow control equation of the gallium oxide melt region:

[0090] Continuity equation: ;

[0091] Momentum equation: ;

[0092] Energy equation: ;

[0093] in, It means to find the gradient; Indicates speed; represents the reference density of gallium oxide melt; t represents time, p represents pressure, represents dynamic viscosity; represents the thermal expansion coefficient; T represents the temperature at the calculation grid; Indicates the reference temperature; represents the acceleration due to gravity, represents the density of gallium oxide melt; represents specific heat capacity; represents thermal conductivity; Indicates heat source W / m 3 .in, Indicates speed The divergence is 0. Indicates speed The Laplace operator.

[0094] The heat transfer flow control equation may also include a heat transfer flow control equation for a protective atmosphere region:

[0095] Continuity equation: ;

[0096] Momentum equation: ;

[0097] Energy equation: ;

[0098] Ideal gas state equation: ;

[0099] in, Indicates the density of the protective atmosphere; represents the gradient; t represents the time, Indicates speed; It represents the reference density of the protective atmosphere, and p represents the pressure; represents dynamic viscosity; represents the specific heat capacity of gallium oxide melt J / (kg·K); T represents the temperature at the calculation grid; represents thermal conductivity; Indicates heat source W / m 3 ; represents the ideal gas constant.

[0100] The heat transfer flow control equation may also include a heat transfer flow control equation for a solid region:

[0101] Conductor governing equations: ;

[0102] in, Indicates the density of solid materials; represents specific heat capacity; T represents the temperature at the calculation grid; t represents time; It means to find the gradient; represents thermal conductivity; Indicates heat source W / m 3 .

[0103] Step S103, based on the heat transfer flow numerical model, simulating the heat transfer flow process of gallium oxide under the current growth parameters to obtain simulation results; the simulation results include: flow field information of the gallium oxide melt region in the crucible during the crystal growth process.

[0104] In this embodiment, the simulation results include, under the current growth parameters, by solving the heat transfer flow control equation, obtaining the temperature values, thermal fields, flow field information, silicon melt velocity, etc. of each calculation grid in the geometric model during the stable growth of the gallium oxide single crystal. In a possible implementation, the current growth parameter is at least one of the following: heating power, crucible rotation speed, crystal rotation speed, and structural information of the gallium oxide single crystal growth system.

[0105] Step S104, determining whether the gallium oxide prepared under the current growth parameters will undergo spiral growth according to the eddy current distribution in the gallium oxide melt region in the simulation result.

[0106] The embodiment of the present application establishes a numerical calculation model to simulate the heat transfer flow process of gallium oxide under the current growth parameters, thereby determining the eddy current distribution in the gallium oxide melt region based on the flow field information of the gallium oxide melt region in the simulation results (the velocity magnitude and direction at each calculation grid). Finally, based on the eddy current distribution, it is determined whether spiral growth will occur in gallium oxide under the current growth parameters. The embodiment of the present application realizes accurate judgment of whether spiral growth occurs in the growth process of gallium oxide single crystals through numerical simulation, and helps determine more optimal process parameters to ensure the quality of single crystals.

[0107] In a possible implementation manner, the step S104, determining whether the gallium oxide prepared under the current growth parameters will undergo spiral growth according to the eddy current distribution in the gallium oxide melt region in the simulation result, includes:

[0108] Step S1041, based on the velocity size and direction at each calculation grid in the gallium oxide melt region in the simulation results, determine whether a vortex appears in the central region of the growth interface. In general, the vortex that appears in the central region of the growth interface is often a clockwise vortex. It can be determined whether the vortex belongs to the vortex in the central region or the vortex in the outer region based on the location of the center of the vortex. Among them, the vortex that appears in the central region refers to the vortex caused by the rotation of the crystal; the vortex that appears in the outer region is the vortex caused by thermal buoyancy (hot fluid goes up, cold fluid goes down).

[0109] Step S1042: when no eddy current appears in the central region, determining that the gallium oxide prepared under the current growth parameters will not undergo spiral growth.

[0110] Step S1043, determining whether eddies appear in the outer edge of the growth interface according to the velocity magnitude and direction of each calculation grid in the gallium oxide melt region in the simulation results. In general, eddies appearing in the outer edge of the growth interface are often counterclockwise eddies.

[0111] Step S1044: when no eddy current appears in the outer edge region, determining that the gallium oxide prepared under the current growth parameters will undergo spiral growth.

[0112] Step S1045, when eddies appear in both the central region and the outer region, determine the position of the stagnation point; the stagnation point is the point where the velocity of the boundary region between the eddies in the central region and the eddies in the outer region is zero.

[0113] Step S1046, determining whether the gallium oxide prepared under the current growth parameters will undergo spiral growth according to the position of the stagnation point.

[0114] In this embodiment, it is first necessary to determine whether eddy currents appear in the central area and the outer edge area according to the speed and speed direction of each calculation grid in the melt area in the simulation results. Figure 2 , Figure 2 A schematic diagram of eddy current distribution is shown, as Figure 2 As shown, 1 is the growth center axis of the gallium oxide single crystal, 2 refers to the gallium oxide single crystal, and the melt region generally has two vortices in the central region 4 and the outer region 3. The central region refers to the region where the positive projection of the gallium oxide crystal in the melt region is located, that is, the circular region surrounded by the triple point, and the outer region refers to the melt region except the central region.

[0115] In the actual single crystal growth process, there are generally three types of vortex distribution in the gallium oxide melt area: one is that there is no vortex in the central area. In this case, the vortex in the outer edge area will expand to the central area, the crystal grows along the axial direction, and spiral growth is not easy to occur; one is that there is no vortex in the outer edge area. In this case, the vortex in the central area will expand to the outer edge area, the crystal grows along the radial direction, and spiral growth problems are prone to occur; and the other is that Figure 2 As shown, there is a vortex in the central area, and there is a vortex in the outer edge area at the same time. In this case, it is necessary to determine the vortex distribution in the two areas, and judge whether spiral growth will occur based on the stagnation points of the two vortices.

[0116] Among them, Figure 2 As shown in the figure, P is the stagnation point, which refers to the point in the boundary area of ​​two vortices where the velocity is zero, such as the boundary point when two vortices are tangent. Due to the different directions of the two vortices, there is at least one position point in the boundary area, which is subjected to the force in the opposite direction of the two vortices, so that the flow velocity at this position point is zero. The boundary area refers to the distance between the two vortices.

[0117] In a possible implementation manner, the step S1046, determining whether the gallium oxide prepared under the current growth parameters will undergo spiral growth according to the position of the stagnation point, includes:

[0118] Determining a first distance according to the position of the stagnation point, wherein the first distance is a vertical distance between the stagnation point and a growth center axis of the gallium oxide single crystal;

[0119] According to the position of the triple point, a second distance is determined, wherein the second distance is a vertical distance between the triple point and the growth center axis of the gallium oxide single crystal; wherein, Figure 2 As shown, P3 is the triple point, which refers to the boundary point of crystal, melt and gas. The position of the triple point is the position coordinate pre-set when constructing the model.

[0120] Whether the gallium oxide prepared under the current growth parameters will undergo spiral growth is determined according to whether the ratio of the first distance to the second distance exceeds a preset threshold.

[0121] In a possible implementation manner, the preset threshold is 1, and determining whether spiral growth will occur in gallium oxide prepared under the current growth parameters according to whether the ratio of the first distance to the second distance exceeds the preset threshold includes:

[0122] When the ratio of the first distance to the second distance is less than 1, determining that the gallium oxide prepared under the current growth parameters will not undergo spiral growth;

[0123] When the ratio of the first distance to the second distance is greater than or equal to 1, it is determined that the gallium oxide prepared under the current growth parameters will undergo spiral growth.

[0124] Specifically, the central axis refers to the axis of the growing crystal. The first distance L between the stagnation point P and the central axis is calculated, and the second distance S between the triple point P3 and the central axis is calculated, and a dimensionless length unit criterion number CL (i.e., the ratio of the first distance to the second distance) is defined, so that CL satisfies the following conditions:

[0125] ;

[0126] When CL is less than 1, it can be determined that the spiral growth phenomenon is not likely to occur during the growth of the gallium oxide single crystal under the current growth parameters; when CL is greater than or equal to 1, it can be determined that the spiral growth phenomenon is likely to occur during the growth of the gallium oxide single crystal under the current growth parameters.

[0127] In a possible implementation, the method further includes:

[0128] If it is determined that the gallium oxide prepared under the current growth parameters will undergo spiral growth, modifying the current growth parameters;

[0129] Based on the modified current growth parameters, it is re-determined whether spiral growth will occur in gallium oxide.

[0130] In order to avoid the problem of spiral growth in the single crystal preparation process, after determining that under the current growth parameters, the preparation of gallium oxide single crystal is prone to spiral growth according to the above method (steps S101-S104), the current growth parameters are modified. Exemplarily, the crucible speed can be reduced (the crucible speed is reduced by a unit value), and then numerical simulation is performed again based on the modified crucible speed, and steps S101-S104 are repeated to re-determine whether gallium oxide will have spiral growth.

[0131] In a possible implementation, when it is determined that the gallium oxide prepared under the current growth parameters will undergo spiral growth, modifying the current growth parameters; and re-determining whether the gallium oxide will undergo spiral growth based on the modified current growth parameters, includes:

[0132] Step S201: determining a basic modification amount of the current growth parameter for this modification according to a difference between a ratio of the first distance to the second distance and the preset threshold.

[0133] In this embodiment, when it is determined that spiral growth will occur, a specific modification scheme for modifying the current growth parameters may be: in the first round of modification, a basic modification amount is first determined according to the difference.

[0134] Step S202, based on the modification amount of the current growth parameter, modify the current growth parameter to obtain a modified first growth parameter and a second growth parameter; the first growth parameter represents the growth parameter obtained by adding the basic modification amount to the current growth parameter, and the second growth parameter represents the growth parameter obtained by reducing the basic modification amount to the current growth parameter.

[0135] Since it is impossible to determine in the first round of modification whether the current round of modification should increase the basic modification amount determined in step S201 or decrease the basic modification amount determined in step S201 based on the current growth parameters, when performing the first round of modification of the growth parameters, the modification in both directions of increase and decrease is performed simultaneously to obtain the first growth parameter and the second growth parameter.

[0136] Step S203, resimulating the heat transfer flow process of gallium oxide based on the first growth parameter and the second growth parameter respectively, comparing the obtained simulation results with the simulation results before modifying the current growth parameters, and determining the parameter modification direction, wherein the parameter modification direction is to increase the growth parameters or to decrease the growth parameters.

[0137] For the first growth parameter and the second growth parameter obtained after modification, numerical simulation (simulating the heat transfer flow process of gallium oxide) is performed in accordance with steps S101-S104 to obtain corresponding simulation results (first simulation results and second simulation results). Comparing the obtained simulation results with the simulation results before modifying the current growth parameters means: recalculating the first distance and the second distance according to the eddy current distribution in the obtained simulation results, and calculating the difference between the ratio of the first distance and the second distance and the preset threshold. If the difference is smaller than the difference before modifying the growth parameters, the corresponding parameter modification direction is determined to be the correct modification direction. Thus, it is determined whether the modification amount should be increased (to make the value of the growth parameter larger) or decreased (to make the value of the growth parameter smaller) on the original basis. After determining whether the parameter modification direction is to increase or decrease, multiple rounds of modification can be performed in this direction until it is determined that spiral growth will not occur.

[0138] Step S204, recalculating the difference between the ratio of the first distance to the second distance after the growth parameter is modified and the preset threshold, and determining the modification amount for modifying the growth parameter in the next round according to the recalculated difference.

[0139] Each time a modification is made, the amount of modification increased or decreased is a fixed unit value. Alternatively, each time a modification is made, the amount of modification increased or decreased is determined according to the difference between the ratio and a preset threshold value (e.g., 1). Specifically, when the difference between the ratio of the first distance and the second distance and the preset threshold value is larger, the corresponding amount of modification is larger; when the difference between the ratio of the first distance and the second distance and the preset threshold value is smaller, the corresponding amount of modification is smaller.

[0140] Optionally, multiple difference intervals are set, a first difference interval, a second difference interval and a third difference interval, wherein the first difference interval is lower than the second difference interval, and the second difference interval is lower than the third difference interval, for example, (0.2, 0.5) is lower than [0.5, 0.8). The difference intervals correspond to modification amounts of different sizes, and the higher the difference interval, the larger the corresponding modification amount. That is, the first modification amount corresponding to the first difference interval is smaller than the second modification amount corresponding to the second difference interval, and the second modification amount is smaller than the third modification amount corresponding to the third difference interval. Thus, the corresponding modification amount is determined according to the difference interval in which the difference between the ratio of the first distance to the second distance and the preset threshold value is located.

[0141] Step S205 , according to the parameter modification direction and according to the modification amount of the growth parameters in the next round, the growth parameters are continuously modified, and the heat transfer flow process of gallium oxide is simulated again according to the modified growth parameters to obtain new simulation results.

[0142] According to the parameter modification direction (increase or decrease), after the current growth parameter is modified for the nth round according to the modification amount, steps S101-S104 are executed to perform numerical simulation (simulating the heat transfer flow process of gallium oxide) to obtain corresponding simulation results (first simulation results and second simulation results). According to the obtained simulation results and the eddy current distribution in the obtained simulation results, the first distance and the second distance are calculated, and then the difference between the ratio of the first distance to the second distance and the preset threshold is calculated to determine whether the difference exceeds the preset threshold.

[0143] Step S206, when the difference calculated according to the new simulation result exceeds the preset threshold, the next round of growth parameter modification is performed according to the parameter modification direction until the final calculated difference does not exceed the preset threshold, and the growth parameter modification is terminated, and the growth parameters used in the last round are determined as the optimal growth parameters.

[0144] Specifically, when the calculated difference exceeds the preset threshold, the next round of growth parameter modification is performed according to the parameter modification direction, that is, the n+1th round of modification is performed to re-determine whether spiral growth will occur under the modified growth parameters. Until the end condition is met (the calculated difference does not exceed the preset threshold), the growth parameters of the last round are determined as the optimal growth parameters.

[0145] Embodiment 1

[0146] The crystal speed in the current growth parameters is set to 0.0 rpm, 1.0 rpm, 2.0 rpm, 2.5 rpm, 3.0 rpm, 5.0 rpm, 7.0 rpm and 9.0 rpm, and the other parameters remain the same. Under the above 8 crystal speed conditions, the process of growing gallium oxide single crystal by the Czochralski method is numerically simulated (i.e., executing steps S101-S103), and the flow field distribution of the melt region in the crucible under the 8 crystal speeds is obtained. The dimensionless length criterion number CL is obtained by calculating the first distance from the stagnation point to the central axis and the second distance from the triple point to the central axis, and calculating the ratio of the two. The results are shown in Table 1.

[0147] Table 1

[0148]

[0149] Here, 0 means that there is no eddy current in the central area. In this case, the first distance L from the stagnation point to the central axis is selected to be 0, that is, spiral growth is not likely to occur. Indicates that there is no eddy current in the outer edge area. At this time, the first distance L from the stagnation point to the central axis is selected as , that is, spiral growth is prone to occur. It can be seen from Table 1 above that when the crystal rotation speed is 0.0 rpm, 1.0 rpm, 2.0 rpm, 2.5 rpm, 3.0 rpm and 5.0 rpm, the ratio CL of the first distance and the second distance is less than 1, so it can be judged that when the crystal rotation speed is 0.0 rpm, 1.0 rpm, 2.0 rpm, 2.5 rpm, 3.0 rpm and 5.0 rpm, the gallium oxide single crystal grown by the pulling method will not exhibit spiral growth in the equal-diameter state. When the crystal rotation speed is 7.0 rpm and 9.0 rpm, the ratio CL of the first distance and the second distance is greater than 1, so it can be judged that when the crystal rotation speed is 7.0 rpm and 9.0 rpm, the gallium oxide single crystal grown by the pulling method will exhibit spiral growth in the equal-diameter state.

[0150] The embodiment of the present application realizes accurate determination of whether spiral growth occurs during the growth process of gallium oxide single crystals through numerical simulation, thereby helping to determine more optimal process parameters to ensure the quality of the single crystals.

[0151] Spiral growth often occurs in the process of growing a larger gallium oxide single crystal by the Czochralski method. In the process of using simulation and theoretical guidance experiments, it is not possible to accurately judge under what circumstances the gallium oxide single crystal will have spiral growth according to the existing technology. In response to the above problems, the embodiment of the present application provides a judgment method that can accurately judge the occurrence of spiral growth in the process of growing gallium oxide single crystals by the Czochralski method. By establishing a numerical calculation model, the heat transfer flow process of gallium oxide under the current growth parameters is simulated, so as to determine the eddy current distribution in the gallium oxide melt region according to the flow field information of the gallium oxide melt region in the simulation results (the speed magnitude and direction at each calculation grid). Finally, according to the eddy current distribution, it is determined whether the gallium oxide will have spiral growth under the current growth parameters. Through numerical simulation, the growth conditions and structural parameters of the gallium oxide single crystal growth without spiral growth are obtained more quickly and accurately. In addition, the embodiment of the present application also defines a dimensionless length criterion number (i.e., the ratio between the first distance and the second distance), which can accurately judge whether spiral growth will occur in this state through the size relationship between the criterion number and the preset threshold (e.g., 1).

[0152] The second aspect of the embodiment of the present application further provides a device for judging spiral growth during the growth of a gallium oxide single crystal, which is used to execute the method for judging spiral growth during the growth of a gallium oxide single crystal according to the first aspect, referring to Figure 3 , Figure 3 A schematic diagram of the structure of a device for judging spiral growth during the growth of a gallium oxide single crystal is shown. Figure 3 As shown, the device comprises:

[0153] A geometric model building module is used to build a geometric model based on the structural information of the gallium oxide single crystal growth system;

[0154] A numerical module construction module is used to divide the computational grids of various regions in the geometric model, set the boundary conditions and control equations of the corresponding computational grids in the geometric model, and obtain a heat transfer flow numerical model;

[0155] A numerical simulation module is used to simulate the heat transfer flow process of gallium oxide under current growth parameters based on the heat transfer flow numerical model to obtain simulation results; the simulation results include: flow field information of the gallium oxide melt region in the crucible during the crystal growth process;

[0156] The judgment module is used to determine whether the gallium oxide prepared under the current growth parameters will undergo spiral growth according to the eddy current distribution in the gallium oxide melt region in the simulation result.

[0157] In a possible implementation manner, the determination module includes:

[0158] A first determination submodule is used to determine whether a vortex occurs in the central area of ​​the growth interface according to the velocity magnitude and direction at each calculation grid in the gallium oxide melt region in the simulation result;

[0159] A second determination submodule is used to determine that the gallium oxide prepared under the current growth parameters will not undergo spiral growth when no eddy current occurs in the central region;

[0160] A third determination submodule is used to determine whether an eddy current appears in the outer edge region of the growth interface according to the velocity magnitude and direction at each calculation grid in the gallium oxide melt region in the simulation result;

[0161] A fourth determination submodule is used to determine that the gallium oxide prepared under the current growth parameters will undergo spiral growth when no eddy current occurs in the outer edge region;

[0162] A fifth determination submodule is used to determine the position of a stagnation point when eddy currents appear in both the central region and the outer region; the stagnation point is a point where the velocity of the boundary region between the eddy current in the central region and the eddy current in the outer region is zero;

[0163] The sixth determination submodule is used to determine whether the gallium oxide prepared under the current growth parameters will undergo spiral growth according to the position of the stagnation point.

[0164] In a possible implementation manner, the sixth determining submodule includes:

[0165] A first distance determining unit, configured to determine a first distance according to the position of the stagnation point, wherein the first distance is a vertical distance between the stagnation point and a growth center axis of the gallium oxide single crystal;

[0166] A second distance determining unit, configured to determine a second distance according to the position of the triple point, wherein the second distance is a vertical distance between the triple point and a growth center axis of the gallium oxide single crystal;

[0167] A determination unit is used to determine whether the gallium oxide prepared under the current growth parameters will undergo spiral growth according to whether the ratio of the first distance to the second distance exceeds a preset threshold.

[0168] In a possible implementation manner, the preset threshold is 1, and determining whether spiral growth will occur in gallium oxide prepared under the current growth parameters according to whether the ratio of the first distance to the second distance exceeds the preset threshold includes:

[0169] When the ratio of the first distance to the second distance is less than 1, determining that the gallium oxide prepared under the current growth parameters will not undergo spiral growth;

[0170] When the ratio of the first distance to the second distance is greater than or equal to 1, it is determined that the gallium oxide prepared under the current growth parameters will undergo spiral growth.

[0171] In a possible implementation, the control equation at least includes a heat transfer flow control equation, and the heat transfer flow control equation includes a heat transfer flow control equation for a gallium oxide melt region:

[0172] Continuity equation: ;

[0173] Momentum equation: ;

[0174] Energy equation: ;

[0175] in, It means to find the gradient; Indicates speed; represents the reference density of gallium oxide melt; t represents time, p represents pressure, represents dynamic viscosity; represents the thermal expansion coefficient; T represents the temperature at the calculation grid; Indicates the reference temperature; represents the acceleration due to gravity, represents the density of gallium oxide melt; represents specific heat capacity; represents thermal conductivity; Indicates heat source W / m 3 .

[0176] In a possible implementation, the device further includes:

[0177] A modification module, configured to modify the current growth parameters when it is determined that the gallium oxide prepared under the current growth parameters will undergo spiral growth;

[0178] The determination module is used to re-determine whether the gallium oxide will have spiral growth based on the modified current growth parameters.

[0179] In a possible implementation manner, the current growth parameter is at least one of the following: heating power, crucible rotation speed, crystal rotation speed, and structural information of the gallium oxide single crystal growth system.

[0180] In a possible implementation manner, when it is determined that the gallium oxide prepared under the current growth parameters will undergo spiral growth, the modification module includes:

[0181] A modification amount determination submodule, configured to determine a modification amount for modifying the current growth parameter this time according to a difference between a ratio of the first distance to the second distance and the preset threshold;

[0182] A modification submodule is used to modify the current growth parameter based on the modification amount.

[0183] The present application also provides an electronic device, referring to Figure 4 , Figure 4 Schematic diagram of an electronic device proposed in an embodiment of the present application. Figure 4 As shown, the electronic device 100 includes: a memory 110 and a processor 120. The memory 110 and the processor 120 are connected via a bus communication. The memory 110 stores a computer program, which can be run on the processor 120 to implement the steps in the method for determining spiral growth during the growth of gallium oxide single crystals disclosed in the embodiment of the present application.

[0184] The embodiment of the present application also provides a computer-readable storage medium having a computer program / instruction stored thereon. When the computer program / instruction is executed by a processor, the steps in the method for determining spiral growth during the growth of a gallium oxide single crystal as disclosed in the embodiment of the present application are implemented.

[0185] The embodiment of the present application further provides a computer program product. When the computer program product is run on an electronic device, the processor is enabled to implement the steps of the method for determining spiral growth during the growth of a gallium oxide single crystal as disclosed in the embodiment of the present application.

[0186] The various embodiments in this specification are described in a progressive manner, and each embodiment focuses on the differences from other embodiments. The same or similar parts between the various embodiments can be referenced to each other.

[0187] The embodiments of the present application are described with reference to the flowcharts and / or block diagrams of the methods, devices, electronic devices, and computer program products according to the embodiments of the present application. It should be understood that each process and / or box in the flowchart and / or block diagram, as well as the combination of the processes and / or boxes in the flowchart and / or block diagram, can be implemented by computer program instructions. These computer program instructions can be provided to a processor of a general-purpose computer, a special-purpose computer, an embedded processor, or other programmable data processing terminal device to generate a machine, so that the instructions executed by the processor of the computer or other programmable data processing terminal device generate instructions for implementing the processes in the flowchart and / or block diagram. Figure 1 A process or multiple processes and / or boxes Figure 1 A device that provides the functions specified in a block or multiple blocks.

[0188] These computer program instructions may also be stored in a computer-readable memory capable of directing a computer or other programmable data processing terminal device to operate in a specific manner, so that the instructions stored in the computer-readable memory produce a manufactured product including an instruction device, which implements the process Figure 1 A process or multiple processes and / or boxes Figure 1 A function specified in one or more boxes.

[0189] These computer program instructions can also be loaded onto a computer or other programmable data processing terminal device so that a series of operating steps are executed on the computer or other programmable terminal device to produce a computer-implemented process, thereby providing instructions for executing on the computer or other programmable terminal device to implement the process. Figure 1 A process or multiple processes and / or boxes Figure 1 A step that specifies a function in one or more boxes.

[0190] Although the preferred embodiments of the present application have been described, those skilled in the art may make additional changes and modifications to these embodiments once they have learned the basic creative concept. Therefore, the appended claims are intended to be interpreted as including the preferred embodiments and all changes and modifications that fall within the scope of the embodiments of the present application.

[0191] Finally, it should be noted that, in this article, relational terms such as first and second, etc. are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Moreover, the terms "include", "comprise" or any other variants thereof are intended to cover non-exclusive inclusion, so that a process, method, article or terminal device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, article or terminal device. In the absence of further restrictions, the elements defined by the sentence "including one..." do not exclude the existence of other identical elements in the process, method, article or terminal device including the elements.

[0192] The above is a detailed introduction to the method, device and equipment for judging spiral growth during the growth of a gallium oxide single crystal provided by the present application. Specific examples are used in this article to illustrate the principles and implementation methods of the present application. The description of the above embodiments is only used to help understand the method of the present application and its core idea; at the same time, for general technicians in this field, according to the ideas of the present application, there will be changes in the specific implementation methods and application scopes. In summary, the content of this specification should not be understood as a limitation on the present application.

Claims

1. A method for determining spiral growth during the growth of a gallium oxide single crystal, characterized in that: The method comprises: A geometric model is established based on the structural information of the gallium oxide single crystal growth system; Performing computational mesh division on each region in the geometric model, setting boundary conditions and control equations corresponding to the computational mesh in the geometric model, and obtaining a heat transfer flow numerical model; Based on the heat transfer flow numerical model, the heat transfer flow process of gallium oxide under the current growth parameters is simulated to obtain simulation results; the simulation results include: flow field information of the gallium oxide melt region in the crucible during the crystal growth process; wherein the flow field information includes: velocity magnitude and direction at each calculation grid; Determining whether the gallium oxide prepared under the current growth parameters will undergo spiral growth according to the eddy current distribution in the gallium oxide melt region in the simulation results; The step of determining whether spiral growth will occur in the gallium oxide prepared under the current growth parameters according to the eddy current distribution in the gallium oxide melt region in the simulation result includes: Determining whether a vortex occurs in the central region of the growth interface according to the velocity magnitude and direction at each calculation grid in the gallium oxide melt region in the simulation results; In the case where no eddy current occurs in the central region, it is determined that the gallium oxide prepared under the current growth parameters will not undergo spiral growth; Determining whether an eddy current appears in the outer edge region of the growth interface according to the velocity magnitude and direction at each calculation grid in the gallium oxide melt region in the simulation results; In the case where no eddy current occurs in the outer edge region, it is determined that the gallium oxide prepared under the current growth parameters will undergo spiral growth; In the case where eddies appear in both the central region and the outer region, determining the position of a stagnation point; the stagnation point is a point where the velocity of the boundary region between the eddies in the central region and the eddies in the outer region is zero; According to the position of the stagnation point, it is determined whether the gallium oxide prepared under the current growth parameters will undergo spiral growth.

2. The determination method according to claim 1, characterized in that: The step of determining, based on the position of the stagnation point, whether the gallium oxide prepared under the current growth parameters will undergo spiral growth comprises: Determining a first distance according to the position of the stagnation point, wherein the first distance is a vertical distance between the stagnation point and a growth center axis of the gallium oxide single crystal; Determining a second distance according to the position of the triple point, wherein the second distance is a vertical distance between the triple point and a growth center axis of the gallium oxide single crystal; Whether the gallium oxide prepared under the current growth parameters will undergo spiral growth is determined according to whether the ratio of the first distance to the second distance exceeds a preset threshold.

3. The determination method according to claim 2, characterized in that: The preset threshold is 1, and determining whether spiral growth will occur in the gallium oxide prepared under the current growth parameters according to whether the ratio of the first distance to the second distance exceeds the preset threshold includes: When the ratio of the first distance to the second distance is less than 1, determining that the gallium oxide prepared under the current growth parameters will not undergo spiral growth; When the ratio of the first distance to the second distance is greater than or equal to 1, it is determined that the gallium oxide prepared under the current growth parameters will undergo spiral growth.

4. The determination method according to claim 1, characterized in that: The control equations at least include heat transfer flow control equations, and the heat transfer flow control equations include heat transfer flow control equations in the gallium oxide melt region: Continuity equation: ; Momentum equation: ; Energy equation: ; in, It means to find the gradient; Indicates speed; represents the reference density of gallium oxide melt; t represents time, p represents pressure, represents dynamic viscosity; represents the thermal expansion coefficient; T represents the temperature at the calculation grid; Indicates the reference temperature; represents the acceleration due to gravity, represents the density of gallium oxide melt; represents specific heat capacity; represents thermal conductivity; Indicates a heat source.

5. The determination method according to claim 2, characterized in that: The method further comprises: When it is determined that the gallium oxide prepared under the current growth parameters will undergo spiral growth, the current growth parameters are modified; and based on the modified current growth parameters, it is re-determined whether the gallium oxide will undergo spiral growth.

6. The determination method according to claim 1, characterized in that: The current growth parameter is at least one of the following: heating power, crucible rotation speed, crystal rotation speed, and structural information of the gallium oxide single crystal growth system.

7. The determination method according to claim 5, characterized in that: The method of modifying the current growth parameters when it is determined that the gallium oxide prepared under the current growth parameters will undergo spiral growth; and re-determining whether the gallium oxide will undergo spiral growth based on the modified current growth parameters, comprises: Determining a modification amount of the current growth parameter for this modification according to a difference between a ratio of the first distance to the second distance and the preset threshold; Based on the basic modification amount of the current growth parameter, the current growth parameter is modified to obtain a modified first growth parameter and a second growth parameter; the first growth parameter represents a growth parameter obtained by adding the basic modification amount to the current growth parameter, and the second growth parameter represents a growth parameter obtained by reducing the basic modification amount to the current growth parameter; Resimulating the heat transfer flow process of gallium oxide based on the first growth parameter and the second growth parameter respectively, comparing the obtained simulation results with the simulation results before modifying the current growth parameters, and determining the parameter modification direction, wherein the parameter modification direction is to increase the growth parameter or to decrease the growth parameter; recalculating the difference between the ratio of the first distance to the second distance after the growth parameter is modified and the preset threshold, and determining the modification amount of the growth parameter for the next round according to the recalculated difference; According to the parameter modification direction and according to the modification amount of the growth parameters in the next round, the growth parameters are continuously modified, and the heat transfer flow process of gallium oxide is simulated again according to the modified growth parameters to obtain new simulation results; When the difference calculated according to the new simulation result exceeds the preset threshold, the next round of growth parameter modification is performed in accordance with the parameter modification direction until the difference finally calculated does not exceed the preset threshold, and the growth parameter modification is terminated, and the growth parameters used in the last round are determined as the optimal growth parameters.

8. A device for determining spiral growth during the growth of a gallium oxide single crystal, characterized in that: The method for determining spiral growth during the growth of a gallium oxide single crystal according to any one of claims 1 to 7 is applied to the device, comprising: A geometric model building module is used to build a geometric model based on the structural information of the gallium oxide single crystal growth system; A numerical module construction module is used to divide the computational grids of various regions in the geometric model, set the boundary conditions and control equations of the corresponding computational grids in the geometric model, and obtain a heat transfer flow numerical model; A numerical simulation module is used to simulate the heat transfer flow process of gallium oxide under current growth parameters based on the heat transfer flow numerical model to obtain simulation results; the simulation results include: flow field information of the gallium oxide melt region in the crucible during the crystal growth process; wherein the flow field information includes: velocity magnitude and direction at each calculation grid; The judgment module is used to determine whether the gallium oxide prepared under the current growth parameters will undergo spiral growth according to the eddy current distribution in the gallium oxide melt region in the simulation result.

9. An electronic device, characterized in that: The method comprises a memory, a processor and a computer program stored in the memory, wherein the processor executes the computer program to implement the method for determining spiral growth during the growth of a gallium oxide single crystal according to any one of claims 1 to 7.

Images