Method and device for detecting extremely deep level traps

Abstract

The application discloses a kind of extremely deep energy level trap detection method and device, the method includes: based on deep energy level transient spectroscopy, the concentration of shallowest energy level trap of original semiconductor to be measured is detected;According to the n th electron beam filling dose, the n th electron injection is carried out to semiconductor to be measured to fill at least one electron in each defect of semiconductor to be measured after n-1 th injection, and the n th injection after semiconductor to be measured is obtained;Based on deep energy level transient spectroscopy, the concentration of shallowest energy level trap of semiconductor to be measured after n th injection is detected, and the concentration of n+1 shallow energy level trap of original semiconductor to be measured is obtained;Wherein, after electron injection to deeper energy level trap, deeper energy level trap can be converted into shallower energy level trap.The application can realize the detection of deeper energy level trap concentration and the scope of application is wider.

Description

Technical Field

[0001] The present invention belongs to the field of semiconductor technology, and in particular relates to a method and device for detecting extremely deep energy level traps. Background Art

[0002] As traps in semiconductor devices have become a major bottleneck restricting the development of semiconductors, various methods for quantitatively characterizing trap characteristics have been proposed. The current mainstream quantitative trap detection method is Deep Level Transient Spectroscopy (DLTS), but it can only detect traps at shallower energy levels, such as traps whose energy levels are less than 1.0 eV away from the bottom of the conduction band or the top of the valence band, and cannot detect deep energy level traps whose energy levels are close to the midline of the band gap. If only shallow energy level traps are detected, the impact of deep energy level traps on device characteristics will be ignored, which may mislead the reasons for poor device characteristics or poor reliability. Another popular method is deep energy level spectroscopy, which can only detect photosensitive traps and has extremely high requirements for laser light source equipment and sample electrodes during detection, and is not very universal.

[0003] Therefore, the currently popular trap detection methods are limited in the types of traps they can detect and have a narrow scope of application. Summary of the Invention

[0004] The embodiments of the present invention provide a method and device for detecting extremely deep energy level traps, which can solve the problem that currently popular trap detection methods are limited in the types of traps that can be detected and have a narrow scope of application.

[0005] In a first aspect, an embodiment of the present invention provides a method for detecting very deep energy level traps, the method comprising:

[0006] Based on deep level transient spectroscopy, the concentration of the shallowest energy level traps in the original semiconductor to be tested is detected;

[0007] Performing an nth electron injection on the semiconductor to be tested according to an nth electron beam filling dose to fill at least one electron in each defect of the semiconductor to be tested after the n-1th injection, thereby obtaining the semiconductor to be tested after the nth injection, wherein the semiconductor to be tested after the 0th injection is the original semiconductor to be tested, n is a positive integer less than or equal to N-1, and N is the maximum number of energy levels of the same defect in the original semiconductor to be tested;

[0008] Based on deep level transient spectroscopy, the concentration of the shallowest energy level trap of the semiconductor to be tested after the nth injection is detected to obtain the concentration of the n+1th shallow energy level trap of the original semiconductor to be tested;

[0009] Here, after electron injection into the deeper energy level trap, the deeper energy level trap can be converted into a shallower energy level trap.

[0010] In a second aspect, the embodiment of the present application provides a deep energy level trap detection device, comprising:

[0011] The deep energy level transient spectrum detection module is configured to detect the concentration of the shallowest energy level trap of the original semiconductor to be detected based on the deep energy level transient spectrum method.

[0012] The electron injection module is configured to perform the n-th electron injection on the semiconductor to be detected to fill at least one electron in each defect of the semiconductor to be detected after the (n-1)-th injection according to the n-th electron beam filling dose, so as to obtain the semiconductor to be detected after the n-th injection, wherein the semiconductor to be detected after the 0-th injection is the original semiconductor to be detected, n is a positive integer less than or equal to N-1, and N is the maximum number of energy levels of the same defect in the original semiconductor to be detected.

[0013] The deep energy level transient spectrum detection module is further configured to detect the concentration of the (n+1)-th shallowest energy level trap of the original semiconductor to be detected based on the deep energy level transient spectrum method.

[0014] The deep energy level trap can be converted into a shallow energy level trap after the electron injection on the deeper energy level trap.

[0015] Compared with the prior art, the embodiment of the present application has the beneficial effects that: according to the method provided by the present application, the defects of the deeper energy level can be converted into the defects of the shallower energy level by performing the electron injection on the semiconductor to be detected, and then the DLTS method is used to detect the semiconductor to be detected after the injection to obtain the trap concentration of the deeper energy level, so as to realize the detection of the trap concentration of the deeper energy level and expand the detection range; since the deep energy level spectroscopy method is not used, the detection of the semiconductor device which is not sensitive to light excitation and the non-transparent semiconductor device can be realized, and a laser is not needed; therefore, the application range of the present application is wider. BRIEF DESCRIPTION OF DRAWINGS

[0016] Figure 1 A schematic diagram of the formation of the trap with the change of the energy level is provided for the embodiment of the present application.

[0017] Figure 2 An implementation flowchart of the deep energy level trap detection method is provided for the embodiment of the present application.

[0018] Figure 3 A structure schematic diagram of the deep energy level trap detection device is provided for the embodiment of the present application. DETAILED DESCRIPTION

[0019] In the following description, for purposes of explanation and not limitation, specific details are set forth such as particular architectures, technologies, techniques, etc. in order to provide a thorough understanding of the embodiments of the present application. However, it will be apparent to those skilled in the art that the present application can be practiced in other embodiments that depart from these specific details. In other instances, detailed descriptions of well-known systems, devices, circuits, and methods are omitted so as not to obscure the description of the present application with unnecessary detail.

[0020] It is to be understood that the terminology "includes", "has", "holds", "contains" and / or "comprising", "including", "having" and their conjugates used in the present specification and in the following claims are used to indicate existence of the described features, integers, steps, operations, elements, and / or components and / or groups thereof, but do not exclude the possi bility for other features, integers, steps, operations, elements, components and / or groups thereof from existing or being added.

[0021] It is also to be understood that the terminology "and / or" used in the present specification and in the following claims, when referring to a group of items, is to be interpreted to mean one or more of the items in the group can be present, as well as any combination of the items in the group.

[0022] As used in the present specification and in the following claims, the term "if" can be interpreted as meaning "when" or "upon" or "in response to a determination" or "in response to a detection" depending on the context. Similarly, the phrase "if determined" or "if detected [the described condition or event]" can be interpreted as meaning "upon a determination" or "in response to a determination" or "upon a detection [of the described condition or event]" or "in response to a detection [of the described condition or event]" depending on the context.

[0023] In addition, the terms "first", "second", "third", etc. as used in the description of the application and the following claims are merely used to identify different instances of an item, and do not imply or suggest relative importance.

[0024] Reference throughout this specification to "one embodiment" or "an embodiment" or "some embodiments" means that a particular feature, structure, or characteristic described in connection with the embodiment is included in at least one embodiment of the application. Thus, the appearances of the phrases "in one embodiment", "in some embodiments", "in other embodiments", "in additional embodiments", and so on, in various places throughout this specification are not necessarily all referring to the same embodiment, unless otherwise specifically specified. The terms "comprising", "including", "having" and their variants are meant to be construed as "including but not limited to", unless otherwise specifically noted.

[0025] The conventional DLTS method can detect the concentration of semiconductor traps by the following steps S101-S104:

[0026] S101, place the semiconductor device under test into a variable temperature sample chamber, connect the electrodes of the detection equipment, ensure the transmission of electrical signals and vacuumize the sample in the chamber.

[0027] S102, set appropriate temperature and test parameters, such as bias voltage V measure , filling voltage V full , filling pulse width t p , then apply a test bias voltage to the semiconductor device under test. After stabilization, apply a filling pulse voltage to the device, restore the test bias voltage after the pulse ends, and then detect the transient change curve of the capacitance of the semiconductor device under test.

[0028] S103, change the temperature, repeat the above step S102, and obtain the capacitance transient curve under different temperature and rate windows.

[0029] S104, analyze the capacitance transient curve to obtain the deep level transient spectrum of the semiconductor device under test, and obtain the Allen Niu curve of the semiconductor device under test according to the height of the deep level transient spectrum and the peak temperature under different rate windows. Then analyze the Allen Niu curve to obtain the trap concentration of the semiconductor device under test.

[0030] The traditional DLTS method can only detect relatively shallow energy level traps with an energy level less than 1eV, and cannot detect extremely deep energy level traps with an energy level greater than 1eV or even close to the middle line of the semiconductor band gap.

[0031] Another traditional trap detection method, i.e. deep level spectroscopy method, can detect the concentration of semiconductor traps by the following steps S201-S206:

[0032] S201, place the semiconductor device under test into a variable temperature sample chamber, connect the electrodes of the detection equipment, ensure the transmission of electrical signals and vacuumize the sample in the chamber.

[0033] S202, connect the light excitation source (such as laser and xenon lamp) and the electrical measurement equipment (such as lock-in amplifier, signal acquisition system, etc.).

[0034] S203, keep the temperature of the semiconductor device under test constant by heating and / or cooling system.

[0035] S204, select an appropriate wavelength of laser light source to excite the sample. The wavelength of the light source is usually selected below the band gap energy of the semiconductor device under test material to ensure that the deep level transition can be excited and the conduction band transition is not directly excited.

[0036] S205: After the semiconductor device under test is excited by light, a highly sensitive device such as a lock-in amplifier is used to measure changes in the conductivity of the semiconductor under test, or changes in the capacitance of the semiconductor under test. Changes in conductivity and capacitance can reflect the coincidence or emission process of deep-level defect states in the semiconductor device under test.

[0037] S206: Repeat steps S204 and S205 to change the wavelength of the light source to obtain data corresponding to each wavelength and generate a deep energy level spectrum. Perform fitting analysis on the spectrum to extract the concentration of traps in the semiconductor device to be tested.

[0038] This method can only detect traps that are sensitive to light, not those that are insensitive to light excitation. Furthermore, this method requires the wavelength of the laser source to be below the bandgap energy of the semiconductor material. For example, to test ultra-wide bandgap semiconductor devices like gallium oxide, a deep ultraviolet laser with a wavelength less than 253nm is required, which is extremely difficult to obtain. Furthermore, because this method requires the laser to penetrate the device for detection, it cannot be used if the device electrodes are not transparent to light.

[0039] Therefore, the currently popular trap detection methods are limited in the types of traps they can detect and have a narrow scope of application.

[0040] In view of this, the present invention provides a method for detecting extremely deep energy level traps. By injecting electrons into the semiconductor to be tested, defects at deeper energy levels can be converted into defects at shallower energy levels. The DLTS method is then used to detect the injected semiconductor to be tested to obtain the trap concentration at deeper energy levels, thereby realizing the detection of the trap concentration at deeper energy levels and expanding the detection range. Since the present invention does not adopt deep energy level spectroscopy, it can realize the detection of semiconductor devices that are insensitive to light excitation and non-transparent semiconductor devices, and there is no need to use lasers. Therefore, the scope of application of the present invention is relatively wide.

[0041] The present invention will be further described in detail below with reference to specific examples, but the embodiments of the present invention are not limited thereto.

[0042] Figure 1 FIG2 is a schematic diagram showing how the formation energy of a trap varies with energy levels according to an embodiment of the present invention.

[0043] See also Figure 1 , Figure 1 The curve in the figure intuitively shows the relationship between the trap energy level and the charged state in the semiconductor material, that is, how the formation energy of traps with different charged states changes when the Fermi level of the material changes from the top of the valence band to the bottom of the conduction band. Figure 1 Several line segments with different slopes, such as A1A2, A2A3, and A3A4, correspond to different charged states.

[0044] The slope of each line segment is positively correlated with the charge state q of the trap, that is, the slope of the line segment changes with the charge state. The higher the charge state, the larger the slope. When the Fermi level reaches a certain value, the different charge states of the trap will switch, and these points are the charge state transition points. For example Figure 1 The inflection points in the graph are point A1, point A2, point A3, and point A4, which correspond to the energy level positions of the traps.

[0045] For example, the nitrogen interstitial (N i ) as an example, N i -1 state, the defect carries a negative charge and an extra electron; N i 0 state, the defect has no charge; N i +1 state, the defect carries a positive charge and lacks an electron; N i +2 state, the defect carries two positive charges and lacks two electrons; N i +3 The defect has three positive charges and lacks three electrons. Gallium vacancies of different charge states have their own corresponding energy levels (i.e., charge state transition points). i +3 Convert to N i +2 The transition point (energy level) is about E C -2.6eV; N i +2 Convert to N i +1 The transition point (energy level) is about E C -1.9eV; N i +1 Convert to N i 0 The transition point (energy level) is about E C -1.2eV; N i 0 Convert to N i -1 The transition point (energy level) is about E C -0.6eV.

[0046] Therefore, for defects at charge state transition points, filling a defect at a deeper energy level with an electron can convert it to a defect at a shallower energy level. For example, filling a nitrogen interstitial defect at a (+3 / +2) charge state transition with an electron can convert it to a nitrogen interstitial defect at a (+2 / +1) charge state transition.

[0047] Figure 2An implementation flowchart of a method for detecting an extremely deep energy level trap according to an embodiment of the present application is shown. The method can be applied to the device 400 for detecting an extremely deep energy level trap described above. By way of example and not limitation, the method can include steps S301-S304, which are described below.

[0048] S301, detecting the concentration of the shallowest energy level trap of the original semiconductor to be measured based on the deep energy level transient spectroscopy.

[0049] In one example, the deep energy level transient spectrum of the original semiconductor to be measured can be obtained by steps S101-S104 described above, the spectrum line of the deep energy level transient spectrum of the original semiconductor to be measured under different rate windows can be analyzed, and the Allen Nuss curve of the original semiconductor to be measured can be obtained. The concentration of the shallowest energy level trap of the original semiconductor to be measured can be identified from the Allen Nuss curve of the original semiconductor to be measured.

[0050] S302, performing the n-th electron injection on the semiconductor to be measured according to the n-th electron beam filling dose to fill at least one electron in each defect of the semiconductor to be measured after the (n-1)-th injection, and obtaining the semiconductor to be measured after the n-th injection.

[0051] For example, n is a positive integer less than or equal to N-1, and N is the maximum number of energy levels of the same kind of defect in the original semiconductor to be measured.

[0052] For example, the semiconductor to be measured after the 0-th injection can be the original semiconductor to be measured,

[0053] In one possible implementation, the number of electrons x filled in each defect during the n-th electron injection can be the difference between the charge state of the (n+1)-th shallowest energy level trap and the n-th shallowest energy level trap of the original semiconductor to be measured.

[0054] For example, if the shallowest energy level trap of the original semiconductor to be measured is a (+1 / +0) charge state conversion defect, and the next one is a (+3 / +2) charge state defect, then 2 electrons can be filled in each defect during the 1-st electron injection, so that the (+3 / +2) charge state defect is converted into a (+1 / +0) charge state conversion defect.

[0055] For example, if the shallowest energy level trap of the original semiconductor to be measured is a (+1 / +0) charge state conversion defect, and the next one is a (+2 / +1) charge state defect, then 1 electron can be filled in each defect during the 1-st electron injection, so that the (+2 / +1) charge state defect is converted into a (+1 / +0) charge state conversion defect.

[0056] In one example, if the material of the original semiconductor under test is gallium nitride, there are four energy level nitrogen interstitial defects (i.e. N=4) in this material, which are shallow to deep: (0 / -1) charge state transition nitrogen interstitial defects, (+1 / +0) charge state transition nitrogen interstitial defects, (+2 / +1) charge state transition nitrogen interstitial defects, and (+3 / +2) charge state transition nitrogen interstitial defects. Therefore, 1 electron can be filled in each defect during each electron injection.

[0057] In one possible implementation, the nth electron beam filling dose used at the nth filling can be determined according to the concentration of the (n+1)th shallow energy level trap of the original semiconductor under test.

[0058] For example, the nth electron beam filling dose can be approximately equal to the product of the concentration of the (n+1)th shallow energy level trap of the original semiconductor under test and x, so that x electrons can be filled in each defect during electron injection.

[0059] For example, if the shallowest energy level trap of the original semiconductor under test is the (0 / -1) charge state transition defect, and the second shallowest is the (+2 / +1) charge state transition defect, then x=2, and the 1st electron beam filling dose can be 2p, where p is the concentration of the (+1 / 0) charge state transition defect in the original semiconductor under test.

[0060] In one example, generally, the concentration of each energy level defect in the semiconductor is approximately one thousandth of the doping concentration thereof, and therefore the nth electron beam filling dose can be approximately the product of one thousandth of the doping concentration of the original semiconductor under test and x.

[0061] S303, based on the deep level transient spectroscopy method, detecting the concentration of the shallowest energy level trap of the semiconductor after the nth injection, to obtain the concentration of the (n+1)th shallow energy level trap of the original semiconductor under test.

[0062] In one example, similarly, the deep level transient spectrum of the semiconductor after the nth injection can be obtained by the above steps S101-S104, the spectrum line of the deep level transient spectrum of the semiconductor after the nth injection (i.e. the nth deep level transient spectrum) under different rate windows is analyzed, the Allen Nues curve of the semiconductor after the nth injection (i.e. the nth Allen Nues curve) is obtained, the concentration of the shallowest energy level trap of the semiconductor after the nth injection is identified from the Allen Nues curve, and finally the concentration of the shallowest energy level trap of the semiconductor after the nth injection is taken as the concentration of the (n+1)th shallow energy level trap of the original semiconductor under test.

[0063] For example, if the material of the original semiconductor to be tested is gallium nitride, the concentration of the shallowest energy level defect can be detected first to obtain the concentration of the (+1 / +0) charge state conversion of the nitrogen interstitial defect in the original semiconductor to be tested; then the first electron injection is performed, one electron is injected into each defect to obtain the semiconductor to be tested after the first electron injection, and the concentration of the shallowest energy level defect of the semiconductor to be tested after the first electron injection is detected to obtain the concentration of the (+2 / +1) charge state conversion of the nitrogen interstitial defect. The second electron injection is performed on the semiconductor to be tested after the first electron injection, one electron is injected into each defect to obtain the semiconductor to be tested after the second electron injection, and the concentration of the shallowest energy level defect of the semiconductor after the second electron injection is detected to obtain the concentration of the (+3 / +2) charge state conversion of the nitrogen interstitial defect in the original semiconductor to be tested.

[0064] In step S304, it is determined whether n is equal to N-1.

[0065] In one example, if n=N-1 indicates that the energy level traps of all charge states of the original semiconductor to be tested have been detected, the detection can be stopped.

[0066] In another example, if n is less than N-1, it indicates that there are still undetected traps, and n=n+1 is set to perform steps S302-S304 for the next detection.

[0067] According to the method provided by the present application, by performing electron injection on the semiconductor to be tested, the defects of deeper energy levels can be converted into defects of shallower energy levels, and then the DLTS method is used to detect the semiconductor to be tested after injection to obtain the trap concentration of deeper energy levels, thereby realizing the detection of trap concentration of deeper energy levels and expanding the detection range. Since the deep energy level spectroscopy method is not used, the detection of semiconductor devices that are not sensitive to light excitation and non-transparent semiconductor devices can be realized, and a laser is not required. Therefore, the application range of the present application is wider.

[0068] Figure 3 Fig. 1 shows a structure schematic diagram of a deep energy level trap detection device provided by an embodiment of the present application. As an example but not limitation, the device 400 can include a deep energy level transient spectrum detection module 410 and an electron injection module 420.

[0069] Exemplarily, the deep energy level transient spectrum detection module 410 is used to detect the concentration of the shallowest energy level traps of the original semiconductor to be tested based on the deep energy level transient spectrum method; the electron injection module 420 is used to perform the nth electron injection on the semiconductor to be tested according to the nth electron beam filling dose to fill at least one electron in each defect of the semiconductor to be tested after the n-1th injection, and obtain the semiconductor to be tested after the nth injection, wherein the semiconductor to be tested after the 0th injection is the original semiconductor to be tested, n is a positive integer less than or equal to N-1, and N is the maximum number of energy levels of the same defect in the original semiconductor to be tested; the deep energy level transient spectrum detection module 410 is also used to detect the concentration of the shallowest energy level traps of the semiconductor to be tested after the nth injection based on the deep energy level transient spectrum method, and obtain the concentration of the n+1th shallowest energy level traps of the original semiconductor to be tested; wherein, after the electron injection into the deeper energy level traps, the deeper energy level traps can be converted into shallower energy level traps.

[0070] In one example, the deep energy level transient spectrum detection module 410 is specifically used to: obtain and get the nth deep energy level transient spectrum, wherein the nth deep energy level transient spectrum is the deep energy level transient spectrum of the semiconductor to be tested after the nth injection, analyze the spectral lines of the nth deep energy level transient spectrum under different rate windows to obtain the nth Allennis curve; identify the nth Allennis curve to obtain the concentration of the shallowest energy level traps of the semiconductor to be tested after the nth injection, and use the concentration of the shallowest energy level traps of the semiconductor to be tested after the nth injection as the concentration of the n+1th shallow energy level traps of the original semiconductor to be tested.

[0071] In one example, the number of electrons filled in each defect during the nth electron injection is the difference in charge state between the (n+1)th shallowest energy level trap and the nth shallowest energy level trap of the original semiconductor to be tested.

[0072] In one example, the material of the original semiconductor to be tested includes gallium nitride, the type of defect is nitrogen interstitial defect, N is equal to 4, and the nitrogen interstitial defects in the original semiconductor to be tested are, from shallow to deep: (0 / -1) charge state conversion nitrogen interstitial defect, (+1 / +0) charge state conversion nitrogen interstitial defect, (+2 / +1) charge state conversion nitrogen interstitial defect, (+3 / +2) charge state conversion nitrogen interstitial defect, and the number of electrons filled in each defect is 1 each time electron injection is performed.

[0073] In one example, the nth electron beam filling dose is determined according to the concentration of the (n+1)th shallow energy level trap of the original semiconductor to be tested.

[0074] The device provided by the application can convert defects of deeper energy levels into defects of shallower energy levels by electron injection on the semiconductor to be detected, and then the DLTS method is used to detect the semiconductor after injection to obtain the trap concentration of deeper energy levels, so that the detection of the trap concentration of deeper energy levels is realized, and the detection range is expanded; since the deep level spectroscopy method is not used, the detection of semiconductor devices which are not sensitive to light excitation and non-transparent semiconductor devices can be realized, and a laser is not required; therefore, the application range of the application is wide.

[0075] In the description of the application, the terms "first", "second" are only used for the purpose of description, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first", "second" can be explicitly or implicitly included one or more of the features. In the description of the application, the meaning of "a plurality of" is two or more, unless otherwise specifically limited.

[0076] In the description of the application, the description of the terms "one embodiment", "some embodiments", "example", "specific example", or "some examples" means that the specific features, structures, materials or characteristics described in connection with the embodiment or example are included in at least one embodiment or example of the application. In the description of the application, the illustrative description of the above terms is not necessarily for the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described can be combined in any one or more embodiments or examples in a suitable manner. In addition, those skilled in the art can combine and combine different embodiments or examples described in the specification.

[0077] Although the application is described herein in connection with various embodiments, other variations of the disclosed embodiments can be understood and implemented by those skilled in the art with reference to the drawings, the disclosure, and the appended claims. In the claims, the word "comprising" does not exclude other components or steps, and "a" or "one" does not exclude a plurality. A single processor or other unit can implement several functions listed in the claims. Some measures are described in mutually different dependent claims, but this does not mean that these measures cannot be combined to produce good results.

[0078] The above is a further detailed description of the application in combination with specific preferred embodiments, and the specific implementation of the application cannot be limited to these descriptions. Modifications made by those skilled in the art without departing from the concept of the application should be considered within the scope of protection of the application.

Claims

1. A method for detecting extremely deep energy level traps, characterized in that: include: Based on deep level transient spectroscopy, the concentration of the shallowest energy level traps in the original semiconductor to be tested is detected; Performing an nth electron injection on the semiconductor to be tested according to an nth electron beam filling dose to fill at least one electron in each defect of the semiconductor to be tested after the n-1th injection, to obtain the semiconductor to be tested after the nth injection, wherein the semiconductor to be tested after the 0th injection is the original semiconductor to be tested, n is a positive integer less than or equal to N-1, and N is the maximum number of energy levels of the same defect in the original semiconductor to be tested; Based on deep level transient spectroscopy, the concentration of the shallowest energy level trap of the semiconductor to be tested after the n-th injection is detected to obtain the concentration of the (n+1)th shallow energy level trap of the original semiconductor to be tested; Here, after electron injection into the deeper energy level trap, the deeper energy level trap can be converted into a shallower energy level trap.

2. The method according to claim 1, characterized in that The method of detecting the concentration of the shallowest energy level traps in the semiconductor to be tested after the n-th injection based on deep level transient spectroscopy to obtain the concentration of the (n+1)th shallowest energy level traps in the original semiconductor to be tested comprises: Acquiring and obtaining an n-th deep energy level transient spectrum, wherein the n-th deep energy level transient spectrum is the deep energy level transient spectrum of the semiconductor to be tested after the n-th injection, Analyzing the spectral lines of the n-th deep energy level transient spectrum under different rate windows to obtain the n-th Allenius curve; The nth Allenius curve is identified to obtain the concentration of the shallowest energy level traps in the semiconductor to be tested after the nth injection, and the concentration of the shallowest energy level traps in the semiconductor to be tested after the nth injection is used as the concentration of the (n+1)th shallowest energy level traps in the original semiconductor to be tested.

3. The method according to claim 1, characterized in that The number of electrons filled in each defect during the n-th electron injection is the difference in charge state between the (n+1)th shallowest energy level trap and the (n)th shallowest energy level trap of the original semiconductor to be tested.

4. The method according to claim 3, characterized in that The material of the original semiconductor to be tested includes gallium nitride, the type of defect is nitrogen interstitial defect, N is equal to 4, and the nitrogen interstitial defects in the original semiconductor to be tested are, from shallow to deep: (0 / -1) charge state conversion nitrogen interstitial defect, (+1 / +0) charge state conversion nitrogen interstitial defect, (+2 / +1) charge state conversion nitrogen interstitial defect, (+3 / +2) charge state conversion nitrogen interstitial defect, and the number of electrons filled in each defect is 1 each time electron injection is performed.

5. The method according to claim 1, wherein The nth electron beam filling dose is determined according to the concentration of the n+1th shallow energy level trap of the original semiconductor to be tested.

6. A device for detecting extremely deep energy level traps, characterized in that: include: A deep level transient spectrum detection module, which is used to detect the concentration of the shallowest energy level traps in the original semiconductor to be tested based on deep level transient spectroscopy; an electron injection module, the electron injection module being configured to perform an nth electron injection on the semiconductor to be tested according to an nth electron beam filling dose, so as to fill at least one electron in each defect of the semiconductor to be tested after the n-1th injection, thereby obtaining the semiconductor to be tested after the nth injection, wherein the semiconductor to be tested after the 0th injection is the original semiconductor to be tested, n is a positive integer less than or equal to N-1, and N is the maximum number of energy levels of the same defect in the original semiconductor to be tested; The deep level transient spectrum detection module is further used to detect the concentration of the shallowest energy level trap of the semiconductor to be tested after the n-th injection based on the deep level transient spectrum method, and obtain the concentration of the (n+1)th shallow energy level trap of the original semiconductor to be tested; Here, after electron injection into the deeper energy level trap, the deeper energy level trap can be converted into a shallower energy level trap.

7. The device according to claim 6, characterized in that The deep energy level transient spectrum detection module is also used for: Acquiring and obtaining an n-th deep energy level transient spectrum, wherein the n-th deep energy level transient spectrum is the deep energy level transient spectrum of the semiconductor to be tested after the n-th injection, Analyzing the spectral lines of the n-th deep energy level transient spectrum under different rate windows to obtain the n-th Allenius curve; The nth Allenius curve is identified to obtain the concentration of the shallowest energy level traps in the semiconductor to be tested after the nth injection, and the concentration of the shallowest energy level traps in the semiconductor to be tested after the nth injection is used as the concentration of the (n+1)th shallowest energy level traps in the original semiconductor to be tested.

8. The device according to claim 6, characterized in that The number of electrons filled in each defect during the n-th electron injection is the difference in charge state between the (n+1)th shallowest energy level trap and the (n)th shallowest energy level trap of the original semiconductor to be tested.

9. The device according to claim 8, characterized in that The material of the original semiconductor to be tested includes gallium nitride, the type of defect is nitrogen interstitial defect, N is equal to 4, and the nitrogen interstitial defects in the original semiconductor to be tested are, from shallow to deep: (0 / -1) charge state conversion nitrogen interstitial defect, (+1 / +0) charge state conversion nitrogen interstitial defect, (+2 / +1) charge state conversion nitrogen interstitial defect, (+3 / +2) charge state conversion nitrogen interstitial defect, and the number of electrons filled in each defect is 1 each time electron injection is performed.

10. The device according to claim 6, characterized in that The nth electron beam filling dose is determined according to the concentration of the n+1th shallow energy level trap of the original semiconductor to be tested.

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