Packaging structure and forming method thereof

Abstract

The invention discloses a packaging structure and a forming method thereof, and the packaging structure comprises a micro-channel layer which is internally provided with a first liquid channel; the chip structure is electrically connected with the micro-channel layer; the electric interconnection layer is electrically connected with the chip structure, and a flow channel through hole is formed in the electric interconnection layer; the bonding salient point is electrically connected with the electric interconnection layer; the salient point rings are communicated with the corresponding flow channel through holes; a second liquid flow channel is arranged in the driving substrate, the driving substrate is in bonding connection with the bonding salient point and the salient point ring, and the salient point ring is communicated with the second liquid flow channel; the liquid inlet pipe and the liquid outlet pipe are respectively communicated with the liquid inlet and the liquid outlet; and the bottom filling glue is used for bonding and fixing the liquid inlet pipe and the liquid outlet pipe with the driving substrate. The liquid inlet pipe and the liquid outlet pipe can provide a convenient butt joint mode and are bonded and fixed through underfill glue, so that the sealing reliability requirement for long-term use is met. The formation of a complete liquid flow channel structure and the fixed connection of the liquid inlet pipe and the liquid outlet pipe are matched with the requirements of an existing packaging process, and then mass production can be achieved.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor manufacturing, and in particular to a packaging structure and a forming method thereof. Background Art

[0002] The packaging process of integrated circuits is an essential step in the process of converting integrated circuit chips into practical electronic products. It plays the role of interconnecting electronic modules, mechanical support, and protection, and can significantly improve the reliability of chips. For integrated circuit packaging systems with high performance requirements, flip-chip packaging has begun to become the mainstream method for high-density integrated circuit packaging; at the same time, the emergence of three-dimensional packaging also provides the possibility for higher-density electronic packaging.

[0003] However, the packaging structure in the prior art still has many problems. Summary of the invention

[0004] The technical problem solved by the present invention is to provide a packaging structure and a method for forming the same, so that the sealing performance can meet the requirements of long-term reliability and match the requirements of the existing packaging process to achieve mass production.

[0005] To solve the above problems, the present invention provides a packaging structure, including: a microfluidic layer, wherein the microfluidic layer has a first liquid flow channel, and the microfluidic layer includes a first side and a second side opposite to each other; a chip structure, wherein the chip structure is located on the first side and is electrically connected to the microfluidic layer; an electrical interconnection layer, wherein the electrical interconnection layer is located on the second side and is electrically connected to the chip structure, wherein the electrical interconnection layer has a plurality of flow channel through holes, wherein the flow channel through holes are connected to the first liquid flow channel; a plurality of bonding bumps, wherein the bonding bumps are located on the second side and are electrically connected to the electrical interconnection layer; and a plurality of bump rings, wherein the bump rings are located on the second side and are located on the On the electrical interconnection layer, the bump ring is connected with the corresponding flow channel through hole; a driving substrate, the driving substrate has a second liquid flow channel, the surface of the driving substrate exposes the liquid inlet and liquid outlet of the second liquid flow channel, the driving substrate is located on the second side and is bonded to the bonding bump and the bump ring respectively, the bump ring is connected with the second liquid flow channel; a liquid inlet pipe, the liquid inlet pipe is connected with the liquid inlet; a liquid outlet pipe, the liquid outlet pipe is connected with the liquid outlet; an underfill, the underfill is used to bond and fix the liquid inlet pipe and the driving substrate, as well as the liquid outlet pipe and the driving substrate.

[0006] Optionally, it also includes: a reinforcement ring, which is located on the driving substrate and surrounds the microfluidic layer, the chip structure, the electrical interconnection layer, the bonding bumps and the bump ring.

[0007] Optionally, the liquid inlet pipe and the liquid outlet pipe pass through the reinforcement ring and are fixedly connected to the driving substrate.

[0008] Optionally, it further includes: a packaging layer, which is located on the driving substrate and covers the electrical interconnection layer, the bonding bumps, the bump rings, and a portion of the chip structure.

[0009] Optionally, the electrical interconnection layer includes: a plurality of through silicon via plugs, which penetrate the microfluidic layer and are electrically connected to the chip structure; a plurality of pads, which are electrically connected to corresponding through silicon via plugs, and the bonding bumps are electrically connected to corresponding pads.

[0010] Optionally, the materials of the liquid inlet pipe and the liquid outlet pipe include: metal materials; metal materials include: carbon steel, copper, stainless steel, aluminum alloy or titanium.

[0011] Correspondingly, the technical solution of the present invention also provides a method for forming a packaging structure, comprising: forming a microfluidic layer, wherein the microfluidic layer has a first liquid flow channel, and the microfluidic layer includes a first side and a second side opposite to each other; providing a chip structure; bonding the chip structure to the microfluidic layer, wherein the chip structure after bonding is located on the first side; forming an electrical interconnection layer on the second side, wherein the electrical interconnection layer is electrically connected to the chip structure; forming a plurality of bonding bumps and a plurality of bump rings on the second side, wherein the bonding bumps are electrically connected to the electrical interconnection layer; forming a plurality of flow channel through holes in the electrical interconnection layer, wherein the flow channel through holes are respectively connected to the first liquid flow channel; , and the corresponding convex ring are connected; providing a driving substrate, the driving substrate has a second liquid flow channel, and the surface of the driving substrate exposes the liquid inlet and liquid outlet of the second liquid flow channel; bonding the driving substrate to the bonding bump and the convex ring respectively, the driving substrate after bonding is located on the second side, and the convex ring is connected to the second liquid flow channel; providing a liquid inlet pipe and a liquid outlet pipe; based on the bottom filling glue, the liquid inlet pipe and the driving substrate, as well as the liquid outlet pipe and the driving substrate are respectively bonded and fixed, and the liquid inlet pipe is connected to the liquid inlet, and the liquid outlet pipe is connected to the liquid outlet after bonding and fixing.

[0012] Optionally, before bonding and fixing the liquid inlet pipe and the liquid outlet pipe, the method further includes: bonding a reinforcement ring on the driving substrate, wherein the reinforcement ring surrounds the microfluidic layer, the chip structure, the electrical interconnection layer, the bonding bumps and the bump ring.

[0013] Optionally, before the reinforcement ring is bonded to the driving substrate, the method further includes: performing an opening process on the reinforcement ring; and the liquid inlet pipe and the liquid outlet pipe penetrate through the reinforcement ring and are fixedly connected to the driving substrate.

[0014] Optionally, before bonding and fixing the liquid inlet pipe and the liquid outlet pipe, the method further includes: forming a packaging layer on the driving substrate, wherein the packaging layer covers the electrical interconnection layer, the bonding bumps, the bump rings, and a portion of the chip structure.

[0015] Optionally, the electrical interconnection layer includes: a plurality of through silicon via plugs, which penetrate the microfluidic layer and are electrically connected to the chip structure; a plurality of pads, which are electrically connected to corresponding through silicon via plugs, and the bonding bumps are electrically connected to corresponding pads.

[0016] Optionally, the method for forming the flow channel through hole includes: performing laser drilling processing on the electrical interconnection layer surrounded by the bump ring until the electrical interconnection layer is penetrated to form the flow channel through hole.

[0017] Optionally, the bonding bump and the bump ring are formed synchronously.

[0018] Optionally, the method for forming the bonding bump and the bump ring includes: forming a photoresist layer on the electrical interconnection layer, the photoresist layer having a plurality of patterned openings; forming the bonding bump and the bump ring in the corresponding patterned openings; and removing the photoresist layer after forming the bonding bump and the bump ring.

[0019] Optionally, the bonding bumps and the bump rings are formed in the corresponding patterned openings by an electroplating process.

[0020] Compared with the prior art, the technical solution of the present invention has the following advantages:

[0021] In the packaging structure of the technical solution of the present invention, the first liquid flow channel in the microchannel layer and the second liquid flow channel in the driving substrate are connected through the convex ring and the flow channel through hole to form a complete liquid flow channel structure. The liquid inlet pipe and the liquid outlet pipe are respectively connected to the liquid inlet and the liquid outlet of the driving substrate, providing a convenient docking method. Moreover, the liquid inlet pipe and the driving substrate, as well as the liquid outlet pipe and the driving substrate are bonded and fixed by the bottom filling glue to meet the sealing reliability requirements for long-term use. The formation of a complete liquid flow channel structure and the fixed connection of the liquid inlet pipe and the liquid outlet pipe can match the requirements of the existing packaging process, and thus can achieve mass production. In addition, the circulation of the cooling liquid also flows through the second liquid flow channel in the driving substrate, and can also dissipate heat for the driving substrate.

[0022] Furthermore, it also includes: a reinforcement ring, which is located on the driving substrate and surrounds the microchannel layer, the chip structure, the electrical interconnection layer, the bonding bumps and the bump ring. The reinforcement ring can increase the overall mechanical strength of the packaging structure and can suppress the warping phenomenon that occurs during packaging.

[0023] Furthermore, the liquid inlet pipe and the liquid outlet pipe penetrate the reinforcing ring and are fixedly connected to the driving substrate. By passing the liquid inlet pipe and the liquid outlet pipe through the reinforcing ring, the reinforcing ring can provide a more stable limit for the liquid inlet pipe and the liquid outlet pipe, thereby effectively reducing the problem of loosening of the bonding position of the liquid inlet pipe and the liquid outlet pipe with the driving substrate and causing leakage.

[0024] In the method for forming the packaging structure of the technical solution of the present invention, the first liquid flow channel in the microchannel layer and the second liquid flow channel in the driving substrate are connected through the convex ring and the flow channel through hole to form a complete liquid flow channel structure. The liquid inlet pipe and the liquid outlet pipe are respectively connected to the liquid inlet and the liquid outlet of the driving substrate, providing a convenient docking method. Moreover, the liquid inlet pipe and the driving substrate, as well as the liquid outlet pipe and the driving substrate are bonded and fixed by the bottom filling glue to meet the sealing reliability requirements for long-term use. The formation of a complete liquid flow channel structure and the fixed connection of the liquid inlet pipe and the liquid outlet pipe can match the requirements of the existing packaging process, and thus can achieve mass production. In addition, the circulation of the cooling liquid also flows through the second liquid flow channel in the driving substrate, and can also dissipate heat for the driving substrate.

[0025] Furthermore, before the liquid inlet pipe and the liquid outlet pipe are bonded and fixed, the method further includes: bonding a reinforcement ring on the drive substrate, the reinforcement ring surrounding the microfluidic layer, the chip structure, the electrical interconnection layer, the bonding bumps and the bump ring. The reinforcement ring can increase the overall mechanical strength of the packaging structure and can suppress the warping phenomenon that occurs during packaging.

[0026] Furthermore, before the reinforcing ring is bonded to the driving substrate, the method further includes: opening the reinforcing ring; and the liquid inlet pipe and the liquid outlet pipe penetrate the reinforcing ring and are fixedly connected to the driving substrate. By passing the liquid inlet pipe and the liquid outlet pipe through the reinforcing ring, the reinforcing ring can provide a more stable limit for the liquid inlet pipe and the liquid outlet pipe, thereby effectively reducing the problem of loosening of the bonding position of the liquid inlet pipe and the liquid outlet pipe with the driving substrate and causing leakage. BRIEF DESCRIPTION OF THE DRAWINGS

[0027] Figures 1 to 13It is a structural schematic diagram of each step of the method for forming a packaging structure in an embodiment of the present invention. DETAILED DESCRIPTION

[0028] As described in the background art, there are still many problems with the packaging structure in the prior art, which will be described in detail below with reference to the accompanying drawings.

[0029] As the integration of chips becomes higher and higher, the heat generated also increases. Traditional air cooling methods can no longer meet the needs of efficient heat dissipation. Therefore, microchannel liquid cooling technology came into being. This heat dissipation technology uses liquid (usually water or special coolant) to flow through tiny channels on the surface of the chip to remove heat.

[0030] However, currently the inlet and outlet pipes and the inlet and outlet of the microchannel are temporarily sealed by gluing or rubber gaskets. This kind of sealing cannot meet the long-term reliability requirements and cannot match the requirements of the existing packaging process and cannot be mass-produced.

[0031] On this basis, the present invention provides a packaging structure and a method for forming the same, wherein the first liquid flow channel in the microchannel layer and the second liquid flow channel in the driving substrate are connected through the convex ring and the flow channel through hole to form a complete liquid flow channel structure. The liquid inlet pipe and the liquid outlet pipe are respectively connected to the liquid inlet and the liquid outlet of the driving substrate, providing a convenient docking method. Moreover, the liquid inlet pipe and the driving substrate, as well as the liquid outlet pipe and the driving substrate are bonded and fixed by the bottom filling glue to meet the sealing reliability requirements for long-term use. The formation of a complete liquid flow channel structure and the fixed connection of the liquid inlet pipe and the liquid outlet pipe can match the requirements of the existing packaging process, thereby enabling mass production. In addition, the circulation of the cooling liquid also flows through the second liquid flow channel in the driving substrate, and can also dissipate heat for the driving substrate.

[0032] In order to make the above-mentioned objects, features and advantages of the present invention more obvious and easy to understand, specific embodiments of the present invention are described in detail below with reference to the accompanying drawings.

[0033] Figures 1 to 13 It is a structural schematic diagram of each step of the method for forming a packaging structure in an embodiment of the present invention.

[0034] Please refer to Figure 1 , forming a microfluidic layer 100, wherein the microfluidic layer 100 has a first liquid flow channel 1001 therein, and the microfluidic layer 100 includes a first side 100a and a second side 100b opposite to each other.

[0035] It should be noted that, in this embodiment, the microfluidic layer 100 not only provides the first liquid channel 1001 for the circulation of the cooling liquid, but it itself should be a chip, the main function of which is to connect the chip structure and realize high-speed, short-distance communication through vertical interconnection.

[0036] In this embodiment, the material of the micro-channel layer 100 is silicon.

[0037] In this embodiment, the method for forming the microfluidic layer 100 includes: providing an initial microfluidic layer 100 ; performing a patterned etching process on the initial microfluidic layer 100 to form the first liquid channel 1001 , and at the same time allowing the initial microfluidic layer 100 to form the microfluidic layer 100 .

[0038] Please refer to Figure 2 , providing a chip structure 200.

[0039] In this embodiment, the chip structure 200 includes: 1 logic chip and 4 memory chips (such as DRAM1\DRAM2\DRAM3\DRAM4), and 5 chips (not marked) are stacked in sequence and supported by a supporting substrate (not marked).

[0040] In other embodiments, the chip structure may include more than 5 chips or less than 5 chips, and the types of chips included may also be flexibly selected based on actual needs.

[0041] Please refer to Figure 3 , the chip structure 200 is bonded to the microfluidic layer 100 , and the chip structure 200 after bonding is located at the first side 100 a .

[0042] In this embodiment, the bonding connection process between the chip structure 200 and the microchannel layer 100 adopts a fusion bonding process. Specifically, the logic chip is bonded to the microchannel layer 100 .

[0043] Please continue to refer to Figure 3 After bonding the chip structure 200 and the microchannel layer 100, the microchannel layer 100 is thinned from the second side 100b to the first side 100a. The thinning process may be a chemical mechanical polishing process.

[0044] Please refer to Figure 4 After bonding the chip structure 200 and the microfluidic channel layer 100 , an electrical interconnection layer is formed on the second side 100 b , and the electrical interconnection layer is electrically connected to the chip structure 200 .

[0045] In this embodiment, the electrical interconnection layer includes: a plurality of through silicon via plugs 300 , which penetrate the microfluidic layer 100 and are electrically connected to the chip structure 200 ; and a plurality of pads 301 , which are electrically connected to corresponding through silicon via plugs 300 .

[0046] In this embodiment, the electrical interconnection layer also includes: a dielectric layer 302 located on the second side 100b, the dielectric layer 302 is located on the microfluidic layer 100, and the dielectric layer 302 covers the pad 301; a passivation layer 303 located on the dielectric layer 302; and a buffer layer 304 located on the passivation layer 303; wherein the dielectric layer 302, the passivation layer 303 and the buffer layer 304 expose a portion of the surface of the pad 301.

[0047] In this embodiment, the method for forming the through silicon via plug 300 is to form a plug through hole (not shown) in the microchannel layer 100 by adopting a through silicon via process (Through Silicon Via), and then fill the plug through hole with a conductive material to form the through silicon via plug 300. The method for forming the pad 301 is to first deposit a material layer (not shown) to form the pad 301, and then perform a pattern etching process on it to form the pad 301; the method for forming the dielectric layer 302, the passivation layer 303 and the buffer layer 304 is also to first deposit a corresponding material layer (not shown), and then perform a pattern etching process on it to form the dielectric layer 302, the passivation layer 303 and the buffer layer 304.

[0048] In this embodiment, the dielectric layer 302, the passivation layer 303 and the buffer layer 304 are all made of insulating materials, wherein the dielectric layer 302 may be made of silicon oxide, the passivation layer 303 may be made of silicon nitride, and the buffer layer 304 may be made of polyimide.

[0049] In this embodiment, after the electrical interconnection layer is formed, a plurality of bonding bumps and a plurality of bump rings are formed on the second side 100b, and the bonding bumps are electrically connected to the electrical interconnection layer. Figures 5 to 8 .

[0050] Please refer to Figure 5 , forming an adhesion layer 401 and a seed layer 402 located on the adhesion layer 401.

[0051] In this embodiment, the adhesion layer 401 is formed on the exposed surfaces of the pad 301 , the dielectric layer 302 , the passivation layer 303 , and the buffer layer 304 by a sputtering process or other metal deposition processes.

[0052] In this embodiment, the material of the adhesion layer 401 may be titanium or titanium tungsten.

[0053] In this embodiment, the seed layer 402 is formed on the adhesion layer 401 by a sputtering process.

[0054] In this embodiment, the seed layer 402 is made of copper.

[0055] It should be noted that, in this embodiment, the adhesion layer 401 and the seed layer 402 are the under bump metallization (UBM) layer prepared before the bonding bump and the bump ring are made. The under bump metallization layer is a metal transition layer between the pad 301 and the bonding bump, and mainly plays the role of adhesion and diffusion barrier.

[0056] Please refer to Figure 6 and Figure 7 , Figure 7 It is a top view of the several patterned openings in the photoresist layer. After the adhesion layer 401 and the seed layer 402 are formed, a photoresist layer 403 is formed on the electrical interconnection layer. The photoresist layer 403 has several patterned openings 404 therein.

[0057] It should be noted that, in the present embodiment, the process steps for forming the photoresist layer 403 include coating, pre-baking, exposure, development, and post-baking. Since there are many factors affecting the thick photoresist lithography of positive photoresist, the thick photoresist needs to be coated with a photoresist material that conforms to rheology and supports a single spin coating operation thickness of 40 to 100 μm. In order to improve the verticality of the side walls of the subsequently formed bonding bumps and the bump rings, the thickness of the photoresist layer 403 needs to be greater than the height of the bonding bumps and the bump rings, and a photoresist material with a thickness of about 80 μm or more is coated at one time.

[0058] Please refer to Figure 8 and Fig. 9 , Fig. 9 It is a top view of the bonding bump and the bump ring. The bonding bump 405 and the bump ring 406 are formed in the corresponding patterned opening 404. After the bonding bump 405 and the bump ring 406 are formed, the photoresist layer 403 is removed.

[0059] In this embodiment, the bonding bump 405 is electrically connected to the corresponding pad 301 .

[0060] In this embodiment, the bonding bumps 405 and the bump rings 406 are formed in the corresponding patterned openings 404 by electroplating.

[0061] In this embodiment, the bonding bumps 405 and the bump rings 406 are both made of copper.

[0062] In this embodiment, the bonding bumps 405 and the bump rings 406 are formed simultaneously to simplify the process and improve the process efficiency.

[0063] It should be noted that, in this embodiment, the bonding bump 405 is electrically connected to the pad 301, and its function is to transmit electrical signals; the bump ring 406 is a hollow structure, which does not need to bear the function of electrical connection, and is only used as a connecting pipe for the circulation of cooling liquid. The heights of the bonding bump 405 and the bump ring 406 need to be consistent so that the driving substrate provided at the same time can be bonded and connected later.

[0064] In this embodiment, after forming the bonding bump 405 and the bump ring 406, the surfaces thereof may be electroplated with nickel to form a uniform nickel barrier layer (not shown) to prevent copper diffusion and improve solderability. After forming the nickel barrier layer, a solder layer (not shown) is electroplated on the surface thereof for subsequent soldering steps.

[0065] In other embodiments, the nickel barrier layer is electroplated or not according to application requirements, and the nickel barrier layer can be directly omitted in some copper column products.

[0066] In this embodiment, the photoresist layer 403 may be removed by using chemical solvent or plasma cleaning.

[0067] Please continue to refer to Figure 8 After removing the photoresist layer 403, the seed layer 402 and the adhesion layer 401 exposed on the surface of the electrical interconnection layer are removed.

[0068] In this embodiment, an etching solution is used to remove the excess adhesion layer 401 and the seed layer 402, and it is ensured that the etching solution does not damage the already formed bonding bumps 405, the bump rings 406, and the solder layer.

[0069] Please refer to Fig.10 A plurality of flow channel through holes 305 are formed in the electrical interconnection layer, and the flow channel through holes 305 are respectively connected to the first liquid flow channel 1001 and the corresponding convex ring 406.

[0070] In this embodiment, the method of forming the flow channel through hole 305 includes: performing laser drilling processing on the electrical interconnection layer surrounded by the bump ring 406 until the electrical interconnection layer is penetrated to form the flow channel through hole 305 .

[0071] It should be noted that, in this embodiment, the flow channel through hole 305 penetrates the dielectric layer 302, the passivation layer 303 and the buffer layer 304 in the electrical interconnection layer. Laser drilling is a process of using a high-energy-density laser beam to irradiate the surface of a material, causing the material to melt or vaporize instantly, thereby forming holes in the material.

[0072] Please refer to Fig.11 , providing a driving substrate 500 , wherein the driving substrate 500 has a second liquid flow channel 501 , and a surface of the driving substrate 500 exposes a liquid inlet 5011 and a liquid outlet 5012 of the second liquid flow channel 501 .

[0073] It should be noted that, in this embodiment, the surface of the driving substrate 500 also has bonding points corresponding to the bonding bumps 405 and the bump rings 406, wherein the bonding points used for bonding with the bump rings 406 do not have the function of electrical connection, and are only used to bond the bump rings 406 to the driving substrate 500 for fixed connection.

[0074] Please refer to Fig.12 The driving substrate 500 is bonded to the bonding bumps 405 and the bump ring 406 respectively. The driving substrate 500 after bonding is located at the second side 100 b , and the bump ring 406 is connected to the second liquid flow channel 501 .

[0075] In this embodiment, the temperature during bonding is usually set at about 245° C. to melt the bonding bumps 405 and the bump rings 406 so as to form a stable connection with the drive substrate 500. The bump rings 406 are connected to the second liquid flow channel 501 contained in the drive substrate 500, so that the first liquid flow channel 1001 and the second liquid flow channel 501 form a complete liquid flow channel structure.

[0076] Please refer to Fig.13 After bonding the driving substrate 500 , a reinforcement ring 600 is bonded on the driving substrate 500 , and the reinforcement ring 600 surrounds the microfluidic layer 100 , the chip structure 200 , the electrical interconnection layer, the bonding bumps 405 and the bump ring 406 .

[0077] In this embodiment, the reinforcing ring 600 mainly functions to increase the mechanical strength of the packaging structure and suppress the warping phenomenon that occurs during packaging.

[0078] Please continue to refer to Fig.13Before bonding the reinforcement ring 600 , a packaging layer 700 is formed on the driving substrate 500 , and the packaging layer 700 covers the electrical interconnection layer, the bonding bumps 405 , the bump ring 406 , and a portion of the chip structure 200 .

[0079] In this embodiment, the material of the encapsulation layer 700 is epoxy molding compound. It is a commonly used semiconductor encapsulation material, mainly used to protect the chip structure 200 from physical damage, chemical corrosion and environmental factors, and also helps to improve the reliability and stability of the device. The encapsulation layer 700 is formed by heating materials such as epoxy resin to a molten state and injecting them, and then cooling and solidifying them to enhance the stability of the connection and protect the solder joints.

[0080] Please continue to refer to Fig.13 , providing a liquid inlet tube 800 and a liquid outlet tube 801; based on the bottom filling glue 802, the liquid inlet tube 800 and the driving substrate 500, as well as the liquid outlet tube 801 and the driving substrate 500 are respectively bonded and fixed, and the liquid inlet tube 800 after bonding and fixing is connected with the liquid inlet port 5011, and the liquid outlet tube 801 is connected with the liquid outlet port 5012.

[0081] The first liquid flow channel 1001 in the microchannel layer 100 and the second liquid flow channel 501 in the drive substrate 500 are connected through the convex ring 406 and the flow channel through hole 305 to form a complete liquid flow channel structure. The liquid inlet pipe 800 and the liquid outlet pipe 801 are respectively connected with the liquid inlet port 5011 and the liquid outlet port 5012 of the drive substrate 500, providing a convenient docking method. Moreover, the liquid inlet pipe 800 and the drive substrate 500, as well as the liquid outlet pipe 801 and the drive substrate 500 are bonded and fixed by the bottom filling glue 802 to meet the sealing reliability requirements for long-term use. The formation of a complete liquid flow channel structure and the fixed connection of the liquid inlet pipe 800 and the liquid outlet pipe 801 can match the requirements of the existing packaging process, and thus can achieve mass production. In addition, the circulation of the cooling liquid also flows through the second liquid flow channel 501 in the drive substrate 500, and can also dissipate heat for the drive substrate 500.

[0082] It should be noted that the underfill 802 is an epoxy resin material used to fill gaps, aiming to enhance mechanical stability and improve its resistance to thermal stress. The process flow generally includes three steps: dispensing, pre-curing and full curing to fill gaps and enhance connection reliability.

[0083] In this embodiment, before the reinforcing ring 600 is bonded to the driving substrate 500, the reinforcing ring 600 is opened; the liquid inlet pipe 800 and the liquid outlet pipe 801 penetrate the reinforcing ring 600 and are fixedly connected to the driving substrate 500. By passing the liquid inlet pipe 800 and the liquid outlet pipe 801 through the reinforcing ring 600, the reinforcing ring 600 can provide a more stable limit for the liquid inlet pipe 800 and the liquid outlet pipe 801, thereby effectively reducing the problem of loosening of the bonding position of the liquid inlet pipe 800 and the liquid outlet pipe 801 with the driving substrate 500 and causing leakage.

[0084] It should be noted that, in this embodiment, since the reinforcement ring 600, the liquid inlet pipe 800 and the liquid outlet pipe 801 have formed an integral structure when being bonded and fixed to the driving substrate 500, the bottom filling glue simultaneously bonds and fixes the reinforcement ring 600, the liquid inlet pipe 800 and the liquid outlet pipe 801 to the driving substrate 500.

[0085] In other embodiments, the reinforcement ring, the liquid inlet pipe and the liquid outlet pipe may also be an integrally formed structure.

[0086] In this embodiment, the material of the liquid inlet pipe 800 and the liquid outlet pipe 801 includes: metal material, specifically carbon steel, copper, stainless steel, aluminum alloy or titanium. The material of the liquid inlet pipe 800 and the liquid outlet rod is metal material, so that it can have good mechanical strength.

[0087] Accordingly, a packaging structure is also provided in the embodiment of the present invention, please continue to refer to Fig.13, comprising: a microfluidic layer 100, wherein the microfluidic layer 100 has a first liquid flow channel 1001 therein, and the microfluidic layer 100 includes a first side 100a and a second side 100b opposite to each other; a chip structure 200, wherein the chip structure 200 is located at the first side 100a and is electrically connected to the microfluidic layer 100; an electrical interconnection layer, wherein the electrical interconnection layer is located at the second side 100b and is electrically connected to the chip structure 200, wherein the electrical interconnection layer has a plurality of flow channel through holes 305 therein, wherein the flow channel through holes 305 are connected to the first liquid flow channel 1001; a plurality of bonding bumps 405, wherein the bonding bumps 405 are located at the second side 100b and are electrically connected to the electrical interconnection layer; and a plurality of bump rings 406, wherein the bump rings 406 are located at the second side 100b and on the electrical interconnection layer, wherein the bump rings 406 are connected to the opposite The corresponding flow channel through hole 305 is connected; a driving substrate 500, wherein the driving substrate 500 has a second liquid flow channel 501, and the surface of the driving substrate 500 exposes a liquid inlet 5011 and a liquid outlet 5012 of the second liquid flow channel 501, the driving substrate 500 is located on the second side 100b and is bonded to the bonding bump 405 and the bump ring 406 respectively, and the bump ring 406 is connected to the second liquid flow channel 501; a liquid inlet pipe 800, wherein the liquid inlet pipe 800 is connected to the liquid inlet 5011; a liquid outlet pipe 801, wherein the liquid outlet pipe 801 is connected to the liquid outlet 5012; an underfill 802, wherein the underfill 802 is used to bond and fix the liquid inlet pipe 800 and the driving substrate 500, as well as the liquid outlet pipe 801 and the driving substrate 500.

[0088] The first liquid flow channel 1001 in the microchannel layer 100 and the second liquid flow channel 501 in the drive substrate 500 are connected through the convex ring 406 and the flow channel through hole 305 to form a complete liquid flow channel structure. The liquid inlet pipe 800 and the liquid outlet pipe 801 are respectively connected with the liquid inlet port 5011 and the liquid outlet port 5012 of the drive substrate 500, providing a convenient docking method. Moreover, the liquid inlet pipe 800 and the drive substrate 500, as well as the liquid outlet pipe 801 and the drive substrate 500 are bonded and fixed by the bottom filling glue 802 to meet the sealing reliability requirements for long-term use. The formation of a complete liquid flow channel structure and the fixed connection of the liquid inlet pipe 800 and the liquid outlet pipe 801 can match the requirements of the existing packaging process, and thus can achieve mass production. In addition, the circulation of the cooling liquid also flows through the second liquid flow channel 501 in the drive substrate 500, and can also dissipate heat for the drive substrate 500.

[0089] In this embodiment, the packaging structure further includes a reinforcement ring 600, which is located on the driving substrate 500 and surrounds the microchannel layer 100, the chip structure 200, the electrical interconnection layer, the bonding bumps 405 and the bump ring 406. The reinforcement ring 600 can increase the overall mechanical strength of the packaging structure and suppress the warping phenomenon that occurs during packaging.

[0090] In this embodiment, the liquid inlet pipe 800 and the liquid outlet pipe 801 pass through the reinforcement ring 600 and are fixedly connected to the driving substrate 500. By passing the liquid inlet pipe 800 and the liquid outlet pipe 801 through the reinforcement ring 600, the reinforcement ring 600 can provide a more stable limit for the liquid inlet pipe 800 and the liquid outlet pipe 801, thereby effectively reducing the problem of loosening of the bonding position of the liquid inlet pipe 800 and the liquid outlet pipe 801 and the driving substrate 500 to cause leakage.

[0091] In this embodiment, the packaging structure further includes: a packaging layer 700, which is located on the drive substrate 500 and covers the electrical interconnection layer, the bonding bumps 405, the bump rings 406, and part of the chip structure 200. The material of the packaging layer 700 is epoxy molding compound. It is a commonly used semiconductor packaging material, mainly used to protect the chip structure 200 from physical damage, chemical corrosion and environmental factors, and also helps to improve the reliability and stability of the device. The packaging layer 700 is formed by heating materials such as epoxy resin to a molten state, then injecting them into a mold, and cooling and solidifying them.

[0092] In this embodiment, the electrical interconnection layer includes: a plurality of through silicon via plugs 300, which penetrate the microfluidic layer 100 and are electrically connected to the chip structure 200; a plurality of pads 301, which are electrically connected to the corresponding through silicon via plugs 300, and the bonding bumps 405 are electrically connected to the corresponding pads 301.

[0093] In this embodiment, the material of the liquid inlet pipe 800 and the liquid outlet pipe 801 includes: metal material, specifically carbon steel, copper, stainless steel, aluminum alloy or titanium. The material of the liquid inlet pipe 800 and the liquid outlet rod is metal material, so that it can have good mechanical strength.

[0094] Although the present invention is disclosed as above, the present invention is not limited thereto. Any person skilled in the art can make various changes and modifications without departing from the spirit and scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the scope defined by the claims.

Claims

1. A packaging structure, characterized in that: include: A microfluidic channel layer, wherein the microfluidic channel layer has a first liquid flow channel therein, and the microfluidic channel layer includes a first side and a second side opposite to each other; a chip structure, the chip structure being located on the first side and electrically connected to the microfluidic channel layer; an electrical interconnection layer, the electrical interconnection layer being located at the second side and electrically connected to the chip structure, the electrical interconnection layer having a plurality of flow channel through holes, the flow channel through holes being connected to the first liquid flow channel; a plurality of bonding bumps, the bonding bumps being located on the second side and being electrically connected to the electrical interconnection layer; a plurality of bump rings, the bump rings being located on the second side and on the electrical interconnection layer, the bump rings being connected to the corresponding flow channel through holes; A driving substrate, wherein the driving substrate has a second liquid flow channel, a liquid inlet and a liquid outlet of the second liquid flow channel are exposed on a surface of the driving substrate, the driving substrate is located on the second side and is bonded to the bonding bump and the bump ring, respectively, and the bump ring is in communication with the second liquid flow channel; A liquid inlet pipe, the liquid inlet pipe is connected to the liquid inlet; a liquid outlet pipe, the liquid outlet pipe being connected to the liquid outlet; The bottom filling glue is used to bond and fix the liquid inlet pipe and the driving substrate, and the liquid outlet pipe and the driving substrate.

2. The packaging structure according to claim 1, characterized in that: Also includes: A reinforcement ring is located on the driving substrate and surrounds the microfluidic layer, the chip structure, the electrical interconnection layer, the bonding bumps and the bump ring.

3. The packaging structure according to claim 2, characterized in that: The liquid inlet pipe and the liquid outlet pipe penetrate through the reinforcement ring and are fixedly connected to the driving substrate.

4. The packaging structure according to claim 1, characterized in that: Also includes: A packaging layer is located on the driving substrate and covers the electrical interconnection layer, the bonding bumps, the bump rings, and a portion of the chip structure.

5. The packaging structure according to claim 1, characterized in that: The electrical interconnection layer includes: a plurality of through silicon via plugs, which penetrate the microchannel layer and are electrically connected to the chip structure; a plurality of pads, which are electrically connected to the corresponding through silicon via plugs, and the bonding bumps are electrically connected to the corresponding pads.

6. The packaging structure according to claim 1, characterized in that: The materials of the liquid inlet pipe and the liquid outlet pipe include: metal materials; the metal materials include: carbon steel, copper, stainless steel, aluminum alloy or titanium.

7. A method for forming a packaging structure, characterized in that: include: forming a microfluidic layer, wherein the microfluidic layer has a first liquid flow channel, and the microfluidic layer includes a first side and a second side opposite to each other; Providing chip structure; Bonding the chip structure to the microfluidic layer, wherein the chip structure after bonding is located on the first side; forming an electrical interconnection layer on the second side, the electrical interconnection layer being electrically connected to the chip structure; forming a plurality of bonding bumps and a plurality of bump rings on the second side, wherein the bonding bumps are electrically connected to the electrical interconnection layer; forming a plurality of flow channel through holes in the electrical interconnection layer, wherein the flow channel through holes are respectively connected to the first liquid flow channel and the corresponding convex point ring; Providing a driving substrate, wherein the driving substrate has a second liquid flow channel, and a surface of the driving substrate exposes a liquid inlet and a liquid outlet of the second liquid flow channel; The driving substrate is bonded to the bonding bump and the bump ring respectively, wherein the driving substrate after bonding is located at the second side, and the bump ring is connected to the second liquid flow channel; Provide a liquid inlet pipe and a liquid outlet pipe; The liquid inlet pipe and the driving substrate, as well as the liquid outlet pipe and the driving substrate are bonded and fixed respectively based on the bottom filling glue, and the liquid inlet pipe and the liquid outlet are connected to the liquid inlet and the liquid outlet after bonding and fixing.

8. The method for forming a package structure according to claim 7, wherein: Before bonding and fixing the liquid inlet pipe and the liquid outlet pipe, the method further includes bonding a reinforcement ring on the drive substrate, wherein the reinforcement ring surrounds the microchannel layer, the chip structure, the electrical interconnection layer, the bonding bumps and the bump ring.

9. The method for forming a package structure according to claim 8, wherein: Before the reinforcement ring is bonded to the driving substrate, the method further includes: performing an opening process on the reinforcement ring; and the liquid inlet pipe and the liquid outlet pipe penetrate through the reinforcement ring and are fixedly connected to the driving substrate.

10. The method for forming a package structure according to claim 7, wherein: Before the liquid inlet pipe and the liquid outlet pipe are bonded and fixed, the method further includes: forming a packaging layer on the drive substrate, wherein the packaging layer covers the electrical interconnection layer, the bonding bumps, the bump rings, and a portion of the chip structure.

11. The method for forming a package structure according to claim 7, wherein: The electrical interconnection layer includes: a plurality of through silicon via plugs, which penetrate the microchannel layer and are electrically connected to the chip structure; a plurality of pads, which are electrically connected to the corresponding through silicon via plugs, and the bonding bumps are electrically connected to the corresponding pads.

12. The method for forming a package structure according to claim 7, wherein: The method for forming the flow channel through hole comprises: performing a laser drilling process on the electrical interconnection layer surrounded by the bump ring until the electrical interconnection layer is penetrated to form the flow channel through hole.

13. The method for forming a package structure according to claim 7, wherein: The bonding bumps and the bump rings are formed simultaneously.

14. The method for forming a package structure according to claim 13, wherein: The method for forming the bonding bump and the bump ring comprises: forming a photoresist layer on the electrical interconnection layer, wherein the photoresist layer has a plurality of patterned openings; forming the bonding bump and the bump ring in the corresponding patterned openings; and removing the photoresist layer after forming the bonding bump and the bump ring.

15. The method for forming a package structure according to claim 14, wherein: The bonding bumps and the bump rings are formed in the corresponding patterned openings by using an electroplating process.

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