Silicon boric acid glass packaging structure of crystal

Abstract

The invention discloses a silicon borate glass packaging structure of a crystal, which comprises a bottom plate, contact layers are respectively connected to four corners of the lower surface of the bottom plate, and a first electrode plate is connected to the upper surface of the bottom plate; a quartz wafer is arranged above the bottom plate, a second electrode plate is connected to the quartz wafer, and the second electrode plate is connected with the first electrode plate; a base is arranged above the bottom plate, a square through hole is formed in the position, corresponding to the quartz wafer, of the middle of the base, and the quartz wafer is located in the through hole; a cover plate is arranged above the base, and circular rings are connected to the positions, corresponding to the second circular holes, of the four corners of the lower surface of the cover plate. The quartz wafer is separated from the base, the manufacturing material of the base is changed into the borosilicate glass, and the quartz wafer independently vibrates and does not drive the base to vibrate during vibration, so that the stability of the resonator can be improved, and the service life of the resonator can be prolonged; the base is made of the silicon boric acid glass, and compared with a quartz material, the base has the advantage of being low in price, and therefore production cost can be reduced.

Description

Technical Field

[0001] The invention belongs to the technical field of resonators, and in particular relates to a borosilicate glass packaging structure of a crystal. Background Art

[0002] A quartz crystal resonator is an electronic component that uses the piezoelectric effect of a quartz crystal to generate a high-precision oscillation frequency. It is also called a quartz crystal or crystal oscillator. It is mainly composed of a quartz crystal, a base, a housing, silver glue and other components. It can provide a stable and high-precision oscillation frequency for the entire electronic system and is widely used in communications, wireless, GPS and other fields.

[0003] Patent CN202211548565.4 discloses a crystal resonator and a preparation method thereof, which further reduces the external dimensions of the crystal resonator and further enables the production of ultra-high frequency, small-size crystal resonator products. However, the chip includes a substrate and a pin end, and the substrate also has a pad portion, a transition portion, and an oscillation portion. The chip is connected to the package cover plate and the package bottom plate. When the chip vibrates, these components will be driven to vibrate together. The chip is made of quartz material, which is a brittle material. When the chip vibrates and drives these components to vibrate together, the interaction force between these components will cause the chip to be subjected to additional mechanical stress, which will cause the chip performance to degrade or be damaged, and reduce the service life of the chip. Summary of the invention

[0004] One of the purposes of the present invention is to solve the problem in the prior art that the wafer is subjected to additional mechanical stress, resulting in performance degradation or damage.

[0005] A second object of the present invention is to solve the problem of low production efficiency of resonators.

[0006] The purpose of the present invention can be achieved through the following technical solutions:

[0007] A crystalline borosilicate glass packaging structure comprises a bottom plate, wherein the positions of the four corners of the lower surface of the bottom plate are respectively connected to contact layers, and the upper surface of the bottom plate is connected to a first electrode sheet; a quartz wafer is arranged above the bottom plate, and the quartz wafer is connected to a second electrode sheet, and the second electrode sheet is connected to the first electrode sheet; a base is arranged above the bottom plate, and a square through hole is opened in the middle of the base corresponding to the position of the quartz wafer, and the quartz wafer is located in the through hole; a cover plate is arranged above the base, and the positions of the four corners of the lower surface of the cover plate corresponding to the positions of the second circular hole are connected to circular rings.

[0008] Preferably, first circular holes are respectively opened at the four corners of the bottom plate, and second circular holes are opened at the four corners of the base corresponding to the first circular holes; the first circular hole is connected to the first metal layer, and the second circular hole is connected to the second metal layer.

[0009] Preferably, the first circular hole and the second circular hole are opened by a photolithography exposure process, and the first metal layer and the second metal layer are formed by a sputtering coating process.

[0010] Preferably, the lower end of the first metal layer is connected to the contact layer, and the upper end of the first metal layer is conducted to and connected to the first electrode sheet.

[0011] Preferably, the periphery of the upper surface of the bottom plate is connected to a first circuit, the periphery of the upper surface and the periphery of the lower surface of the base corresponding to the first circuit are connected to a second circuit, and the periphery of the lower surface of the cover plate corresponding to the second circuit is connected to a third circuit.

[0012] Preferably, the bottom plate and the base are combined and connected together by high-temperature bonding in cooperation with the first circuit and the second circuit, and the cover plate and the base are combined and connected together by high-temperature bonding in cooperation with the second circuit and the third circuit.

[0013] Preferably, the bottom plate is made of borosilicate glass, the quartz wafer is made of quartz, the base is made of borosilicate glass, and the cover plate is made of borosilicate glass.

[0014] Preferably, it also includes a cover plate, a square receiving groove is opened in the middle of the cover plate corresponding to the position of the quartz wafer, the quartz wafer is located in the receiving groove, and a fourth circuit is connected to the outer periphery of the lower surface of the cover plate corresponding to the position of the first circuit; the cover plate and the bottom plate are combined and connected together by high-temperature bonding with the cooperation of the first circuit and the fourth circuit.

[0015] Preferably, third circular holes are provided at positions at the four corners of the cover plate corresponding to the first circular holes, and a third metal layer is connected to the third circular hole.

[0016] Preferably, the third circular hole is opened by a photolithography exposure process, and the third metal layer is formed by a sputtering coating process.

[0017] Beneficial effects of the present invention:

[0018] The present invention separates the quartz wafer from the base, and changes the manufacturing material of the base to borosilicate glass. The quartz wafer vibrates independently and will not drive the base to vibrate when vibrating, thereby improving the stability and service life of the resonator.

[0019] The present invention changes the base to borosilicate glass material, which has the advantage of being cheaper than quartz material, thereby reducing production costs.

[0020] The present invention changes the structure of the cover plate so that the cover plate and the base plate are directly bonded at high temperature, thereby reducing process steps and improving production efficiency. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] The present invention will be further described below in conjunction with the accompanying drawings.

[0022] Figure 1 is an exploded view from above of the present invention;

[0023] Figure 2 is a bottom-view exploded view of the present invention;

[0024] Figure 3 is a stereogram of the present invention;

[0025] Figure 4 is a perspective view of the other side of the present invention;

[0026] Figure 5 is a three-dimensional diagram of the cover plate of the present invention;

[0027] Figure 6 It is a three-dimensional view of the other side of the cover plate in the present invention.

[0028] In the figure: 1, bottom plate; 2, quartz wafer; 3, base; 4, cover plate;

[0029] 11. contact layer; 12. first circular hole; 13. first metal layer; 14. first electrode sheet; 15. first circuit;

[0030] 21. A second electrode sheet;

[0031] 31. through hole; 32. second circular hole; 33. second metal layer; 34. second circuit;

[0032] 41. third circuit; 42. circular ring; 43. receiving groove; 44. third circular hole; 45. third metal layer; 46. fourth circuit. DETAILED DESCRIPTION

[0033] The following will be combined with the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0034] Example 1

[0035] See also Figure 1 - Figure 4 As shown, a crystalline borosilicate glass packaging structure includes a base plate 1, which is made of borosilicate glass and is used to connect to a base 3. It has the advantages of high thermal stability, corrosion resistance and low expansion.

[0036] The four corners of the lower surface of the bottom plate 1 are respectively connected with contact layers 11 , and the bottom plate 1 is used for welding on the PCB board through the cooperation of the contact layers 11 .

[0037] A first circuit 15 is connected to the periphery of the upper surface of the bottom plate 1 , and the first circuit 15 is used to assist the bottom plate 1 in connecting to the base 3 .

[0038] The four corners of the bottom plate 1 are respectively provided with first circular holes 12 which are formed by a photolithography exposure process. The first circular holes 12 are connected with a first metal layer 13 which is formed by a sputtering coating process and is used to provide electrical connection.

[0039] A first electrode sheet 14 is connected to the upper surface of the bottom plate 1 , and the first electrode sheet 14 is used to pass electric charges to the quartz wafer 2 .

[0040] The lower end of the first metal layer 13 is connected to the contact layer 11 , and the upper end of the first metal layer 13 is conducted to and connected to the first electrode sheet 14 . This arrangement can improve the airtightness of the resonator.

[0041] The first electrode sheet 14 is formed by etching metal through a photolithography process.

[0042] A quartz crystal 2 is arranged above the base plate 1. The quartz crystal 2 generates mechanical vibration under the action of an external electric field through the inverse piezoelectric effect, and generates an alternating electric field during the vibration process, and forms a stable oscillation frequency through the conversion between vibration and electric field.

[0043] The quartz wafer 2 is made of quartz.

[0044] A second electrode sheet 21 is connected to the quartz wafer 2 . The second electrode sheet 21 is used to excite the quartz wafer 2 to vibrate and serves as a medium for transmitting electrical signals between the quartz wafer 2 .

[0045] The second electrode sheet 21 is connected to the first electrode sheet 14 by high temperature bonding. Through the cooperation between the first electrode sheet 14 and the second electrode sheet 21 , electric charges are passed into the quartz wafer 2 .

[0046] A base 3 is arranged above the bottom plate 1 , and the base 3 is used to connect the bottom plate 1 and the cover plate 4 .

[0047] The base 3 is made of borosilicate glass.

[0048] It is worth noting here that: in the original resonator, the quartz wafer 2 is integrally connected with the base 3, so that the material of the base 3 is also limited to quartz. However, quartz is a brittle material and has poor toughness compared to borosilicate glass. When subjected to impact or pressure, quartz is easy to break or shatter. When the quartz wafer 2 vibrates, it will drive the base 3 to vibrate together, which can easily cause damage to the resonator. Borosilicate glass has high strength and hardness and can withstand certain mechanical shocks and pressures. Now the quartz wafer 2 is separated from the base 3, and the material of the base 3 is changed to borosilicate glass. The quartz wafer 2 vibrates independently and will not drive the base 3 to vibrate when vibrating, which can improve the stability and service life of the resonator.

[0049] Compared with quartz materials, borosilicate glass has the advantage of being cheaper, which can also reduce costs in production.

[0050] A square through hole 31 is provided in the middle of the base 3 at a position corresponding to the quartz wafer 2 . The quartz wafer 2 is located in the through hole 31 . The through hole 31 is used to accommodate the quartz wafer 2 .

[0051] The through hole 31 is formed by etching the base 3 using a photolithography process.

[0052] Second circular holes 32 are provided at the four corners of the base 3 at positions corresponding to the first circular holes 12. The second circular holes 32 are provided by a photolithography exposure process. A second metal layer 33 is connected inside the second circular holes 32. The second metal layer 33 is formed by a sputtering coating process. The second metal layer 33 is used to provide electrical connection.

[0053] The second circuit 34 is connected to the positions of the upper surface periphery and the lower surface periphery of the base 3 corresponding to the first circuit 15 . The second circuit 34 is used to assist the base 3 in connecting the bottom plate 1 and the cover plate 4 .

[0054] The bottom plate 1 and the base 3 are combined and connected together by high temperature bonding in cooperation with the first circuit 15 and the second circuit 34 .

[0055] A cover plate 4 is arranged above the base 3 , and the cover plate 4 is used to connect the base 3 .

[0056] The cover plate 4 is made of borosilicate glass.

[0057] Rings 42 are connected to the four corners of the lower surface of the cover plate 4 corresponding to the positions of the second circular holes 32 . The rings 42 are used to seal the second metal layer 33 , thereby improving the airtightness of the resonator.

[0058] A third circuit 41 is connected to a position on the periphery of the lower surface of the cover plate 4 corresponding to the second circuit 34 . The third circuit 41 is used to assist the cover plate 4 in connecting with the base 3 .

[0059] The cover plate 4 and the base 3 are combined and connected together by high-temperature bonding in cooperation with the second circuit 34 and the third circuit 41 .

[0060] It is worth noting here that the first line 15, the second line 34 and the third line 41 are all used to withstand mechanical stress to prevent the resonator from structural damage due to vibration or external impact. At the same time, the first line 15, the second line 34 and the third line 41 can also provide additional thermal conductivity to help dissipate heat and prevent the resonator from failing due to overheating.

[0061] In specific use, electricity is supplied to the two first circular holes 12 connected to the first electrode sheet 14, and with the cooperation of the first electrode sheet 14, the first circuit 15, the second circuit 34, the third circuit 41 and the second electrode sheet 21, the quartz wafer 2 is charged, and under the action of the inverse piezoelectric effect of the quartz wafer 2, the quartz wafer 2 generates mechanical vibration, and the vibration frequency of the quartz wafer 2 can be changed by changing the size of the charge passed into the first circular hole 12.

[0062] Example 2

[0063] See also Figure 5 - Figure 6 As shown, a crystalline borosilicate glass packaging structure includes a cover plate 4, and the cover plate 4 is used to connect to the base plate 1.

[0064] A square receiving groove 43 is provided in the middle of the cover plate 4 at a position corresponding to the quartz wafer 2 . The quartz wafer 2 is located in the receiving groove 43 . The receiving groove 43 is used to receive the quartz wafer 2 .

[0065] Third circular holes 44 are opened at the four corners of the cover plate 4 at positions corresponding to the first circular holes 12. The third circular holes 44 are opened by a photolithography exposure process. A third metal layer 45 is connected inside the third circular hole 44. The third metal layer 45 is formed by a sputtering coating process and is used to provide electrical connection.

[0066] A fourth circuit 46 is connected to a position on the periphery of the lower surface of the cover plate 4 corresponding to the first circuit 15 , and the fourth circuit 46 is used to assist the cover plate 4 in connecting with the base.

[0067] The cover plate 4 and the bottom plate 1 are combined and connected together by high-temperature bonding in cooperation with the first circuit 15 and the fourth circuit 46 .

[0068] It is worth noting here that: in the original resonator production process steps, high-temperature bonding of the bottom plate 1, the base 3 and the cover plate 4 is required. Now the structure of the cover plate 4 is changed so that the cover plate 4 and the bottom plate 1 are directly bonded at high temperature, which reduces the process steps and can improve production efficiency.

[0069] It should be noted that, in this article, relational terms such as first and second, etc. are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Moreover, the terms "include", "comprise" or any other variants thereof are intended to cover non-exclusive inclusion, so that a process, method, article or device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, article or device.

[0070] Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that various changes, modifications, substitutions and variations may be made to the embodiments without departing from the principles and spirit of the present invention, and that the scope of the present invention is defined by the appended claims and their equivalents.

Claims

1. A crystalline borosilicate glass packaging structure, comprising a base plate (1), characterized in that: The four corners of the bottom surface of the bottom plate (1) are respectively connected to contact layers (11), and the top surface of the bottom plate (1) is connected to a first electrode sheet (14); A quartz wafer (2) is arranged above the bottom plate (1), a second electrode sheet (21) is connected to the quartz wafer (2), and the second electrode sheet (21) is connected to the first electrode sheet (14); A base (3) is arranged above the bottom plate (1), a square through hole (31) is opened in the middle of the base (3) at a position corresponding to the quartz wafer (2), and the quartz wafer (2) is located in the through hole (31); A cover plate (4) is arranged above the base (3), and circular rings (42) are connected to the four corners of the lower surface of the cover plate (4) corresponding to the positions of the second circular holes (32).

2. A crystalline borosilicate glass packaging structure according to claim 1, characterized in that: The bottom plate (1) is provided with first circular holes (12) at the four corners thereof, and the base (3) is provided with second circular holes (32) at the four corners thereof corresponding to the first circular holes (12); The first circular hole (12) is connected to a first metal layer (13), and the second circular hole (32) is connected to a second metal layer (33).

3. The crystalline borosilicate glass packaging structure according to claim 2, characterized in that: The first circular hole (12) and the second circular hole (32) are opened by a photolithography exposure process; the first metal layer (13) and the second metal layer (33) are formed by a sputtering coating process.

4. The crystalline borosilicate glass packaging structure according to claim 3, characterized in that: The lower end of the first metal layer (13) is connected to the contact layer (11), and the upper end of the first metal layer (13) is conducted to the first electrode sheet (14) and connected to the first electrode sheet (14).

5. The crystalline borosilicate glass packaging structure according to claim 4, characterized in that: The periphery of the upper surface of the bottom plate (1) is connected to a first circuit (15), the periphery of the upper surface and the periphery of the lower surface of the base (3) corresponding to the first circuit (15) are connected to a second circuit (34), and the periphery of the lower surface of the cover plate (4) corresponding to the second circuit (34) is connected to a third circuit (41).

6. The crystalline borosilicate glass packaging structure according to claim 5, characterized in that: The bottom plate (1) and the base (3) are combined and connected together by means of high-temperature bonding in cooperation with the first circuit (15) and the second circuit (34); the cover plate (4) and the base (3) are combined and connected together by means of high-temperature bonding in cooperation with the second circuit (34) and the third circuit (41).

7. The crystalline borosilicate glass packaging structure according to claim 6, characterized in that: The bottom plate (1) is made of borosilicate glass, the quartz wafer (2) is made of quartz, the base (3) is made of borosilicate glass, and the cover plate (4) is made of borosilicate glass.

8. The crystalline borosilicate glass packaging structure according to claim 1, characterized in that: It also includes a cover plate (4), wherein a square receiving groove (43) is provided in the middle of the cover plate (4) at a position corresponding to the quartz wafer (2), the quartz wafer (2) is located in the receiving groove (43), and a fourth circuit (46) is connected to a position on the outer periphery of the lower surface of the cover plate (4) corresponding to the first circuit (15); The cover plate (4) and the bottom plate (1) are combined and connected together by high-temperature bonding in cooperation with the first circuit (15) and the fourth circuit (46).

9. The crystalline borosilicate glass packaging structure according to claim 8, characterized in that: Third circular holes (44) are provided at the four corners of the cover plate (4) at positions corresponding to the first circular holes (12), and a third metal layer (45) is connected inside the third circular hole (44).

10. The crystalline borosilicate glass packaging structure according to claim 9, characterized in that: The third circular hole (44) is opened by a photolithography exposure process, and the third metal layer (45) is formed by a sputtering coating process.

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