Image sensor, image pickup device, and electronic apparatus

Abstract

The invention discloses an image sensor, a camera device and electronic equipment, and belongs to the technical field of camera shooting. The image sensor comprises a control assembly; the plurality of first pixel units are arranged in an array, and each first pixel unit comprises a processing assembly which is connected with the control assembly and is used for processing the received light and generating an electric signal; the electrowetting color-changing layer covers one part of the surface of the processing assembly and is connected with the control assembly; the control assembly is used for controlling the light transmitting state of each electrowetting color changing layer.

Description

Technical Field

[0001] The present application belongs to the field of imaging technology, and specifically relates to an image sensor, an imaging device and an electronic device. Background Art

[0002] In related technologies, such as Figure 1 , Figure 2 and Figure 3 As shown, CMOS image sensors (Complementary Metal-Oxide-Semiconductor) are widely used in camera devices. CMOS includes a plurality of pixel units 102' arranged in an array and controlled by driving circuits, reading circuits, interface circuits and other circuits. In practical applications, PDAF (Phase Detection Auto Focus) technology can be used to achieve automatic focusing of the image sensor. Specifically, PDAF usually refers to setting a shielding object 104' on the light incident surface of the pixel unit 102' to block half of the light incident surface, thereby determining the focus of the image by analyzing the phase difference between different areas of the light incident surface of the pixel unit 102', thereby improving the accuracy and speed of focusing.

[0003] However, since the light-entering surface of the pixel unit 102' is provided with an obstruction 104', the amount of light entering the image sensor is affected, and the shooting effect cannot be guaranteed when the shooting environment is poorly bright. In other words, the shooting process using the PDAF technology can improve the accuracy and speed of focusing, but it cannot take into account the amount of light entering, and thus cannot take into account the shooting effects in different environments. Summary of the invention

[0004] The present application aims to provide an image sensor, a camera device and an electronic device, which can solve the technical problem that image sensors using phase focusing technology in related technologies cannot take into account both focusing accuracy and incident light amount.

[0005] In a first aspect, an embodiment of the present application provides an image sensor, comprising:

[0006] Control components;

[0007] A plurality of first pixel units are arranged in an array, and the first pixel units include:

[0008] A processing component, connected to the control component, for processing the received light to generate an electrical signal;

[0009] An electrowetting chromic layer, covering a portion of the surface of the processing component and connected to the control component;

[0010] The control component is used to control the light transmittance state of each electrowetting color layer respectively.

[0011] In a second aspect, an embodiment of the present application provides a camera device, including: an image sensor as in the first aspect.

[0012] In a third aspect, an embodiment of the present application provides an electronic device, including: a camera device as in the second aspect.

[0013] The image sensor of the embodiment of the present application sets an electrowetting chromic layer in the first pixel unit, and controls the light transmittance of each electrowetting chromic layer separately through a control component. During the shooting process, the light transmittance of the electrowetting chromic layer in each first pixel unit can be controlled separately according to the ambient brightness of the shooting environment. While realizing automatic focus by using PDAF technology and improving the focusing accuracy and speed of the image sensor during shooting, it also takes into account the amount of light entering the image sensor and improves the shooting quality.

[0014] Additional aspects and advantages of the present application will be given in part in the description below, and in part will become apparent from the description below, or will be learned through the practice of the present application. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] The above and / or additional aspects and advantages of the present application will become apparent and easily understood from the description of the embodiments in conjunction with the following drawings, in which:

[0016] Figure 1 A circuit diagram of an image sensor in the related art is shown;

[0017] Figure 2 One of the structural schematic diagrams of a pixel unit in an image sensor in the related art is shown;

[0018] Figure 3 The second structural schematic diagram of a pixel unit in an image sensor in the related art is shown;

[0019] Figure 4 A circuit diagram of an image sensor according to an embodiment of the present application is shown;

[0020] Figure 5 One of the structural schematic diagrams of the image sensor according to the embodiment of the present application is shown;

[0021] Figure 6 Shows Figure 5 One of the structural schematic diagrams of the electrowetting color-changing layer;

[0022] Figure 7 Shows Figure 5 The second structural diagram of the electrowetting color-changing layer;

[0023] Figure 8 Shows Figure 5Schematic diagram of the structure of the electro-wetting color-changing layer (part 3);

[0024] Fig. 9 The second structural schematic diagram of the image sensor according to the embodiment of the present application is shown;

[0025] Fig.10 The third structural schematic diagram of the image sensor according to the embodiment of the present application is shown;

[0026] Fig.11 A fourth structural schematic diagram of an image sensor according to an embodiment of the present application is shown;

[0027] Fig.12 A structural block diagram of a camera device according to an embodiment of the present application is shown;

[0028] Fig.13 A structural block diagram of an electronic device according to an embodiment of the present application is shown.

[0029] Reference numerals:

[0030] 102' pixel unit, 104' occluder;

[0031] 100 image sensor, 102 control component, 104 first pixel unit, 106 processing component, 108 electrowetting chromic layer, 110 electrode layer, 112 packaging layer, 114 dielectric wetting layer, 116 conductive liquid, 118 substrate, 120 conductive layer, 122 photosensitive device, 124 filter, 126 lens, 128 processor, 130 feedback circuit, 132 reading circuit, 134 interface circuit, 136 driving circuit, 138 second pixel unit, 140 silicon substrate, 142 wiring unit, 200 camera device, 300 electronic device. DETAILED DESCRIPTION

[0032] The embodiments of the present application will be described in detail below. Examples of the embodiments are shown in the accompanying drawings, wherein the same or similar reference numerals throughout represent the same or similar elements or elements having the same or similar functions. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain the present application, and should not be construed as limitations on the present application. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in the field without making creative work are within the scope of protection of the present application.

[0033] The features of the terms "first" and "second" in the specification and claims of this application may explicitly or implicitly include one or more of the features. In the description of this application, unless otherwise specified, the meaning of "plurality" is two or more.

[0034] In the description of this application, it should be noted that, unless otherwise clearly specified and limited, the terms "installed", "connected", and "connected" should be understood in a broad sense, for example, fixed connection, detachable connection, or integral connection; mechanical connection, electrical connection; direct connection, indirect connection through an intermediate medium, and internal communication between two elements. For ordinary technicians in this field, the specific meanings of the above terms in this application can be understood according to specific circumstances.

[0035] Combine the following Figures 4 to 13 An image sensor, an imaging device, and an electronic device according to embodiments of the present application are described.

[0036] In some embodiments of the present application, an image sensor is provided. Figure 4 A circuit diagram of an image sensor according to an embodiment of the present application is shown; Figure 5 FIG. 1 shows one of the structural schematic diagrams of the image sensor according to an embodiment of the present application; Figure 4 and Figure 5 As shown, the image sensor 100 includes: a control component 102; a plurality of first pixel units 104, the plurality of first pixel units 104 are arranged in an array, and the first pixel units 104 include: a processing component 106, connected to the control component 102, for processing received light to generate an electrical signal; an electrowetting chromic layer 108, covering a portion of the surface of the processing component 106, and connected to the control component 102; wherein the control component 102 is used to control the light transmittance state of each electrowetting chromic layer 108 respectively.

[0037] In an embodiment of the present application, the image sensor 100 includes a plurality of first pixel units 104 arranged in an array, wherein the first pixel unit 104 includes a processing component 106, and the processing component 106 can be used to process the received light, thereby converting the optical signal into an electrical signal. Then, the image sensor 100 can process the electrical signal to generate the image to be captured.

[0038] Furthermore, the first pixel unit 104 also includes an electrowetting chromic layer 108, which covers a portion of the surface of the processing component 106, and the color of the electrowetting chromic layer 108 itself can change, thereby changing its own light transmittance state, that is, the electrowetting chromic layer 108 can switch between light transmittance and light opaque states.

[0039] It can be understood that the electrowetting chromic layer 108 covers a portion of the surface of the processing component 106. When the electrowetting chromic layer 108 is in an opaque state, the electrowetting chromic layer 108 can block a portion of the surface of the processing component 106. That is, at this time, the image sensor 100 can use the PDAF (Phase Detection Auto Focus) technology to achieve autofocus, thereby ensuring the focusing accuracy and speed of the image sensor 100. On the contrary, when the electrowetting chromic layer 108 is in a light-transmitting state, the amount of light entering the first pixel unit 104 can be guaranteed. In this way, when the ambient brightness is poor, the amount of light entering the first pixel unit 104 is guaranteed, thereby ensuring the shooting quality.

[0040] Furthermore, the image sensor 100 further includes a control component 102, which is connected to the electrowetting chromic layer 108. Through the control component 102, the light-transmitting state of each electrowetting chromic layer 108 can be controlled separately. That is, when the brightness of the shooting environment is high, the electrowetting chromic layer 108 can be controlled to be in an opaque state through the control component 102, so that the image sensor 100 can use the PDAF technology to achieve automatic focus, thereby improving the focusing accuracy and speed of the image sensor 100 during shooting. On the contrary, when the ambient brightness is poor, the electrowetting chromic layer 108 can be controlled to be in a light-transmitting state through the control component 102, thereby ensuring the amount of light entering the image sensor 100, thereby ensuring the quality of the image. In addition, according to the ambient brightness of the shooting environment, the number of electrowetting chromic layers 108 in the opaque state can be controlled by the control component 102, thereby adjusting the density of the opaque electrowetting chromic layer 108 in all pixel units in the image sensor 100, thereby taking into account the focus accuracy and the amount of light incident, and further taking into account the focus accuracy and image quality during the shooting process.

[0041] The image sensor 100 of the embodiment of the present application sets an electrowetting chromic layer 108 in the first pixel unit 104, and controls the light transmittance of each electrowetting chromic layer 108 respectively through the control component 102. During the shooting process, the light transmittance of the electrowetting chromic layer 108 in each first pixel unit 104 can be controlled according to the ambient brightness of the shooting environment. While realizing automatic focusing by using PDAF technology and improving the focusing accuracy and speed of the image sensor 100 during the shooting process, the amount of light entering the image sensor 100 is taken into account to improve the shooting quality.

[0042] For example, Fig. 9 FIG. 4 shows a second structural diagram of an image sensor according to an embodiment of the present application; FIG. Figure 5 and Fig. 9As shown, when the ambient brightness of the shooting environment is high, the electrowetting chromic layer 108 of all first pixel units 104 can be controlled to be in a light-proof state through the control component 102, that is, the light-proof electrowetting chromic layer 108 is in a high-density state in the image sensor 100. Thus, the image sensor 100 uses the PDAF technology to achieve automatic focusing, thereby improving the focusing accuracy and speed of the image sensor 100 during shooting. Fig.10 FIG. 3 shows a third structural diagram of an image sensor according to an embodiment of the present application; Fig.10 As shown, when the ambient brightness is poor, the control component 102 can control the electrowetting chromic layer 108 of all first pixel units 104 to be in a light-transmitting state, thereby ensuring the amount of light entering the image sensor 100 and further ensuring the quality of the image. Fig.11 FIG. 4 shows a fourth structural diagram of an image sensor according to an embodiment of the present application; Fig.11 As shown, when the ambient brightness is not enough to support the electrowetting chromic layer 108 of all the first pixel units 104 to be in a light-proof state, the electrowetting chromic layer 108 of a part of the first pixel units 104 can be controlled to be in a light-proof state, that is, the light-proof electrowetting chromic layer 108 is in a low-density state in the image sensor 100. In this way, the amount of light entering the image sensor 100 is guaranteed, and the PDAF technology can be used to improve the accuracy and speed of focusing.

[0043] In some embodiments of the present application, the electrowetting color-changing layer 108 includes: a conductive liquid 116 , the conductive liquid 116 is an opaque liquid, and the control component 102 is used to control the area of ​​the processing component 106 that is shielded by the conductive liquid 116 .

[0044] In an embodiment of the present application, the electrowetting chromic layer 108 may include a conductive liquid 116, and the conductive liquid 116 is an opaque liquid. By controlling the component 102, the shape of the conductive liquid 116 can be changed, thereby changing the area of ​​the surface of the processing component 106 blocked by the conductive liquid 116, so as to adjust the light transmittance of the electrowetting chromic layer 108.

[0045] It is understandable that when the ambient light is strong, the control component 102 can control the conductive liquid 116 to increase the shielding area of ​​the conductive liquid 116 on the surface of the processing component 106. Since the conductive liquid 116 is an opaque liquid, the electrowetting chromic layer 108 is in an opaque state at this time. At this time, the image sensor 100 can use the PDAF technology to achieve automatic focus, thereby ensuring the focusing accuracy and speed of the image sensor 100. On the contrary, when the ambient light is weak, the control component 102 can control the conductive liquid 116 to reduce the shielding area of ​​the conductive liquid 116 on the surface of the processing component 106. At this time, the electrowetting chromic layer 108 is in a light-transmitting state. At this time, the amount of light entering the first pixel unit 104 can be guaranteed. In this way, when the ambient brightness is poor, the amount of light entering the first pixel unit 104 is guaranteed, thereby ensuring the shooting quality.

[0046] In some embodiments of the present application, the electrowetting color-changing layer 108 also includes: two electrode layers 110, covering a portion of the surface of the processing component 106, and the two electrode layers 110 are connected to the control component 102; an encapsulation layer 112, respectively connected to the two sides of the two electrode layers 110; a dielectric wetting layer 114, arranged between the two electrode layers 110 and covering one electrode layer 110, and a conductive liquid 116 is located between the dielectric wetting layer 114 and one electrode layer 110; wherein the control component 102 is used to change the voltage of the two electrode layers 110 to change the voltage of the dielectric wetting layer 114 and the conductive liquid 116, so that the conductive liquid 116 is adsorbed on the encapsulation layer 112 or covered on the dielectric wetting layer 114.

[0047] In the embodiments of the present application, Figure 6 Shows Figure 5 One of the structural schematic diagrams of the electrowetting color-changing layer; Figure 7 Shows Figure 5 The second structural diagram of the electrowetting color-changing layer; Figure 8 Shows Figure 5 The third structural diagram of the electrowetting color-changing layer; Figure 5 , Figure 6 , Figure 7 and Figure 8 As shown, the electrowetting chromic layer 108 may include two electrode layers 110 and an encapsulation layer 112 , wherein the two electrode layers 110 may be arranged in parallel, and the encapsulation layer 112 is located on both sides of the two electrode layers 110 .

[0048] Furthermore, a dielectric wetting layer 114 and a conductive liquid 116 are also provided on the two electrode layers 110, wherein the dielectric wetting layer 114 covers one electrode layer 110, and the conductive liquid 116 is located between the dielectric wetting layer 114 and the other electrode layer 110. The two electrode layers 110 are connected to the control component 102, and the control component can control the voltage of the dielectric wetting layer 114 and the conductive liquid 116 by changing the voltage of the two electrode layers 110. By changing the voltage of the dielectric wetting layer 114 and the conductive liquid 116, the performance of the dielectric wetting layer 114 can be controlled, thereby generating a pressure difference in the accommodation space, thereby driving the change of the contact angle between the dielectric wetting layer 114 and the conductive liquid 116, thereby changing the shape of the conductive liquid 116, and finally achieving the purpose of controlling the shape and position of the conductive liquid 116.

[0049] Specifically, the encapsulation layer 112 can be made of a hydrophilic material, and the shape of the conductive liquid 116 can be changed by controlling the component 102, and the conductive liquid 116 can be controlled to cover the dielectric wetting layer 114. At this time, due to the shielding of the opaque conductive liquid 116, the electrowetting color-changing layer 108 is in an opaque state. On the contrary, when the control component 102 does not apply a voltage to the electrode layer 110, the conductive liquid 116 returns to its original shape. At this time, due to the hydrophilicity of the encapsulation layer 112, the conductive liquid 116 can be adsorbed on the encapsulation layer 112 on both sides. At this time, the conductive liquid 116 will not shield the dielectric wetting layer 114, that is, at this time, the electrowetting color-changing layer 108 is in a light-transmitting state.

[0050] In some embodiments of the present application, the electrode layer 110 includes: a substrate 118, covering a portion of the surface of the processing component 106; a conductive layer 120, covering the substrate 118, and the conductive layer 120 is connected to the control component 102; wherein the packaging layer 112 and the two conductive layers 120 enclose a containing space, and the conductive liquid 116 is located in the containing space.

[0051] In the embodiments of the present application, Figure 6 As shown, the electrode layer 110 may include a substrate 118 and a conductive layer 120, wherein the substrate 118 is used to cover a portion of the surface of the processing component 106, and the conductive layer 120 is covered on the substrate 118 and is used to connect to the control component 102. The control component 102 can apply a voltage to the conductive layer 120 to control the voltage of the dielectric wetting layer 114 and the conductive liquid 116.

[0052] That is, in each electrowetting color-changing layer 108, two upper and lower substrates 118 are included, and between the upper and lower substrates 118, there are also two upper and lower conductive layers 120. The two conductive layers 120 and the packaging layers 112 located on both sides can enclose a receiving space. The dielectric wetting layer 114 and the conductive liquid 116 are located in the receiving space between the two conductive layers 120. The two conductive layers 120 are connected to the control component 102. The control component 102 can apply voltage to the conductive layer 120 to control the voltage of the dielectric wetting layer 114 and the conductive liquid 116.

[0053] In some embodiments of the present application, the processing component 106 includes: a photosensitive device 122, used to convert a received light signal into an electrical signal; a filter 124, covering the photosensitive device 122, used to filter the received light; wherein the electrowetting color layer 108 covers a portion of the surface of the filter 124.

[0054] In the embodiments of the present application, Figure 5 As shown, the processing component 106 may include a photosensitive device 122 and a filter 124, wherein the filter 124 covers the photosensitive device 122, so that the light received by the photosensitive device 122 can be filtered by the filter 124. For example, the light of three different bands of red, green and blue in the light received by the photosensitive device 122 can be filtered by the filter 124, so as to ensure the photosensitivity effect of the photosensitive device 122.

[0055] Specifically, the photosensitive device 122 may be a photosensitive diode, so as to convert the received light signal into an electrical signal through the photosensitive diode.

[0056] Furthermore, the electrowetting chromic layer 108 covers a portion of the surface of the filter 124, that is, the electrowetting chromic layer 108 can block a portion of the surface of the filter 124. When the electrowetting chromic layer 108 is in an opaque state, light can only enter from the unblocked portion of the surface of the filter 124, and the PDAF autofocus of the image sensor 100 can be achieved. On the contrary, when the electrowetting chromic layer 108 is in a light-transmitting state, light can enter from the entire surface of the filter 124, and the amount of light entering each photosensitive device 122 can be guaranteed, thereby ensuring image quality in a shooting environment with poor ambient brightness.

[0057] In some embodiments of the present application, the image sensor 110 further includes: a lens 126 covering the surface of the electrowetting chromic layer 108 .

[0058] In the embodiments of the present application, Figure 5As shown, the processing component 106 may further include a lens 126, and the lens 126 covers the surface of the electrowetting chromic layer 108, that is, the electrowetting chromic layer 108 is located between the lens 126 and the filter 124. By providing the lens 126, the received light can be refracted, and then the light can be converged, so as to further ensure the processing effect of the photosensitive device 122 on the light.

[0059] In some embodiments of the present application, the control component 102 includes: a processor 128, connected to the processing component 106, for generating an image based on an electrical signal; a feedback circuit 130, connected to the processor 128 and the electrowetting chromic layer 108, for controlling the light transmittance state of the electrowetting chromic layer 108 according to the parameters of the image during the shooting process.

[0060] In the embodiment of the present application, the control component 102 may include a processor 128, and the processor 128 is connected to the processing component 106, so that the generated electrical signal can be processed to generate a captured image.

[0061] Furthermore, the control component 102 also includes a feedback circuit 130 , which is connected to the processor 128 and the electrowetting chromic layer 108 , so that the feedback circuit 130 can control the light transmittance state of the electrowetting chromic layer 108 according to the captured image generated by the processor 128 .

[0062] That is, during the shooting process, the feedback circuit 130 can first obtain the image generated by the processor 128, which is the preview image displayed by the electronic device during the shooting process, and then determine whether it is necessary to control the light transmittance state of the electrowetting chromic layer 108 according to the parameters of the image. For example, when the brightness effect of the image generated by the processor 128 is poor, it can be determined that the ambient brightness of the current shooting environment is poor. At this time, the feedback circuit 130 can control the electrowetting chromic layer 108 to be in a light transmittance state, or increase the number of electrowetting chromic layers 108 in a light transmittance state to increase the amount of light entering the image sensor 100 and ensure the image effect. On the contrary, the feedback circuit 130 can reduce the number of electrowetting chromic layers 108 in a light transmittance state to increase the focusing accuracy and speed of the image sensor 100.

[0063] In some embodiments of the present application, the control component 102 further includes: a reading circuit 132 connected to the processing component 106 for reading the electrical signal; an interface circuit 134 connected to the reading circuit 132 and the processor 128 for transmitting the electrical signal to the processor 128.

[0064] In the embodiments of the present application, Figure 4As shown, the control component 102 may further include a reading circuit 132, through which the electrical signal generated by the processing component 106 can be read, so that the processor 128 processes the electrical signal and generates a captured image. Specifically, the reading circuit 132 and the processing component 106 can read the electrical signal.

[0065] Furthermore, the control component 102 also includes an interface circuit 134, and the interface circuit 134 is connected to the reading circuit 132 and the processor 128 respectively to realize the transmission of electrical signals.

[0066] Furthermore, the control component 102 further includes a driving circuit 136 , which is connected to the processing component 106 and is used to drive each first pixel unit 104 to operate.

[0067] Specifically, Figure 4 As shown, the control component 102 further includes a driving circuit 136, and by connecting the driving circuit 136 to the processing component 106 of each first pixel unit 104, the operation of the first pixel unit 104 can be driven. That is, when shooting is required, the processing component 106 of each first pixel unit 104 is driven by the driving circuit 136, so that the received light is processed by the processing component 106, thereby converting the light signal into an electrical signal, and further processing the electrical signal by the processor 128 to generate a captured image, thereby realizing the shooting process of the image sensor 100.

[0068] In some embodiments of the present application, the image sensor 100 further includes a plurality of second pixel units 138 , and the plurality of second pixel units 138 and the plurality of first pixel units 104 are arranged in an array; wherein the electrowetting chromic layer 108 is not provided in the second pixel unit 138 .

[0069] In the embodiments of the present application, Fig. 9 , Fig.10 and Fig.11 As shown, the image sensor 100 may further include a plurality of second pixel units 138, and the plurality of second pixel units 138 are arranged in an array with the plurality of first pixel units 104. It should be noted that, in each second pixel unit 138, no electrowetting chromic layer 108 is provided, that is, during the operation of the image sensor 100, the light received by the second pixel unit 138 is not blocked by the electrowetting chromic layer 108.

[0070] It is understandable that, depending on the actual use of the image sensor 100 , all pixel units in the image sensor 100 may include both the first pixel unit 104 having the electrowetting chromic layer 108 and the second pixel unit 138 not having the electrowetting chromic layer 108 .

[0071] In some embodiments of the present application, the image sensor 100 also includes: a silicon substrate 140, a plurality of first pixel units 104 and a plurality of second pixel units 138 are arrayed on the silicon substrate 140; a wiring portion 142, disposed on the silicon substrate 140, one end of the wiring portion 142 is connected to the control component 102, and the other end of the wiring portion 142 is connected to the plurality of electrowetting color layers 108.

[0072] In the embodiments of the present application, Figure 5 As shown, the image sensor 100 may further include a silicon substrate 140, through which the plurality of first pixel units 104 and the plurality of second pixel units 138 may be carried to ensure the stability of the positions of the first pixel units 104 and the second pixel units 138. That is, the plurality of first pixel units 104 and the plurality of second pixel units 138 are arranged in an array on the silicon substrate 140.

[0073] Furthermore, the image sensor 100 further includes a wiring portion 142, which can be disposed on the silicon substrate 140 to realize the arrangement of the wiring portion 142, avoid the wiring portion 142 protruding from the overall structure of the image sensor 100, and ensure the compactness of the structure of the image sensor 100. Specifically, one end of the wiring portion 142 is connected to the control component 102, and the other end of the wiring portion 142 is connected to the plurality of electrowetting chromic layers 108, so that the control component 102 controls each electrowetting chromic layer 108.

[0074] The embodiment of the present application further provides a camera device 200, Fig.12 FIG. 2 shows a schematic structural diagram of a camera device 200 according to an embodiment of the present application. Fig.12 As shown, the camera device 200 includes the image sensor 100 as any one of the above embodiments.

[0075] Since the camera device 200 provided in the embodiment of the present application has the image sensor 100 as in any of the above embodiments, it has the beneficial effects of any of the above embodiments, which are not described in detail here.

[0076] The embodiment of the present application further provides an electronic device 300, Fig.13 A schematic diagram of the structure of an electronic device according to an embodiment of the present application is shown. Fig.13 As shown, the electronic device 300 includes a camera device 200 as described in any one of the above embodiments.

[0077] Since the electronic device 300 provided in the embodiment of the present application has the camera device 200 as in any of the above embodiments, it has the beneficial effects of any of the above embodiments, which are not described in detail here.

[0078] In the description of this specification, the description with reference to the terms "one embodiment", "some embodiments", "illustrative embodiments", "examples", "specific examples", or "some examples" means that the specific features, structures, materials, or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present application. In this specification, the schematic representation of the above terms does not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials, or characteristics described may be combined in any one or more embodiments or examples in a suitable manner.

[0079] Although the embodiments of the present application have been shown and described, those skilled in the art will appreciate that various changes, modifications, substitutions and variations may be made to the embodiments without departing from the principles and spirit of the present application, and that the scope of the present application is defined by the claims and their equivalents.

Claims

1. An image sensor, characterized in that: include: Control components; A plurality of first pixel units are arranged in an array, and the first pixel units include: A processing component, connected to the control component, for processing the received light to generate an electrical signal; an electrowetting chromic layer, covering a portion of the surface of the processing component and connected to the control component; Wherein, the control component is used to control the light transmittance state of each of the electrowetting color layers respectively.

2. The image sensor according to claim 1, characterized in that The electrowetting color-changing layer comprises: Conductive liquid, wherein the conductive liquid is an opaque liquid, and the control component is used to control the area of ​​the processing component covered by the conductive liquid.

3. The image sensor according to claim 2, characterized in that The electrowetting color-changing layer also includes: Two electrode layers, covering a portion of the surface of the processing component, the two electrode layers being connected to the control component; An encapsulation layer, connected to two sides of the two electrode layers respectively; A dielectric wetting layer is disposed between the two electrode layers and covers one of the electrode layers, and the conductive liquid is located between the dielectric wetting layer and one of the electrode layers; The control component is used to change the voltage of the two electrode layers so that the conductive liquid is adsorbed on the packaging layer or covered on the dielectric wetting layer.

4. The image sensor according to claim 3, characterized in that: The electrode layer comprises: a substrate covering a portion of the surface of the processing component; A conductive layer, covering the substrate, wherein the conductive layer is connected to the control component; The packaging layer and the two conductive layers enclose a containing space, and the conductive liquid is located in the containing space.

5. The image sensor according to any one of claims 1 to 4, characterized in that: The processing component includes: A photosensitive device, used for converting a received light signal into the electrical signal; A filter, covering the photosensitive device, for filtering the received light; Wherein, the electrowetting chromic layer covers a portion of the surface of the filter.

6. The image sensor according to claim 5, characterized in that The image sensor further comprises: The lens covers the surface of the electrowetting chromic layer.

7. The image sensor according to any one of claims 1 to 4, characterized in that: The control component comprises: a processor, connected to the processing component, and configured to generate an image based on the electrical signal; A feedback circuit is connected to the processor and the electrowetting chromic layer, and is used to control the light transmittance state of the electrowetting chromic layer according to the parameters of the image during shooting.

8. The image sensor according to claim 7, characterized in that: The control component also includes: A reading circuit, connected to the processing component, for reading the electrical signal: An interface circuit is connected to the reading circuit and the processor, and is used to transmit the electrical signal to the processor.

9. The image sensor according to any one of claims 1 to 4, characterized in that: Also includes: A plurality of second pixel units, wherein the plurality of second pixel units and the plurality of first pixel units are arranged in an array; Wherein, the electrowetting color-changing layer is not provided in the second pixel unit.

10. The image sensor according to claim 9, characterized in that: Also includes: A silicon substrate, a plurality of the first pixel units and a plurality of the second pixel units are arrayed on the silicon substrate; A wiring portion is arranged on the silicon substrate, one end of the wiring portion is connected to the control component, and the other end of the wiring portion is connected to the plurality of electrowetting color-changing layers.

11. A camera device, characterized in that: include: An image sensor as claimed in any one of claims 1 to 10.

12. An electronic device, characterized in that: include: The camera device according to claim 11.

Images