Super-steep sub-threshold swing field transistor based on TENG, processing method and application

Abstract

The invention relates to the technical field of electric double layer transistors, in particular to a super-steep sub-threshold swing field transistor based on TENG, a processing method and application. The super-steep sub-threshold swing field transistor based on the TENG comprises a transistor assembly and a TENG assembly. According to the invention, the TENG assembly is utilized to generate the voltage VG applied to the grid electrode, and the power supply voltage applied to the grid electrode by the existing field effect transistor is replaced; the VG can be changed along with the adjustment of the TENG component, and the current IDS flowing from the source electrode to the drain electrode through the semiconductor layer reaches a negative voltage threshold Vnegative in the process of gradually changing the positive voltage into the negative voltage, so that a super-steep sudden change occurs nearby when the current IDS reaches the negative voltage threshold Vnegative; according to the invention, grid self-power supply and direct interaction between external motion and an electronic device can be realized conveniently, and structure integration is facilitated. The super-steep sub-threshold swing field transistor solves the problem that an existing super-steep sub-threshold swing field transistor is high in integration difficulty due to the fact that an external power source is adopted to serve as grid voltage.

Description

Technical Field

[0001] The present invention relates to the technical field of double electric layer transistors, and in particular to: 1. An ultra-steep subthreshold swing field transistor based on TENG (friction nanogenerator); 2. A processing method for the ultra-steep subthreshold swing field transistor; 3. Application of the ultra-steep subthreshold swing field transistor as an artificial synapse. Background Art

[0002] When describing the subthreshold swing, conventional field-effect transistors are usually limited to 60mV / decade, while ultra-steep subthreshold swing transistors can reach this value at room temperature, which is of great significance for reducing power consumption, improving performance and meeting the needs of modern electronic devices.

[0003] However, most existing ultra-steep subthreshold swing field transistors use an external power supply as the gate voltage, which makes integration difficult and also makes the ultra-steep subthreshold swing field transistor lack a direct interaction mechanism with the external environment. Summary of the invention

[0004] In order to solve the problem of high integration difficulty of existing ultra-steep subthreshold swing field transistors due to the use of an external power supply as a gate voltage, the present invention provides an ultra-steep subthreshold swing field transistor based on TENG, a processing method and an application.

[0005] The present invention is implemented by the following technical solutions:

[0006] In a first aspect, the present invention discloses an ultra-steep subthreshold swing field transistor based on TENG, comprising: a transistor component and a TENG component.

[0007] The transistor component is of NMOS type. The transistor component includes: substrate 1, semiconductor layer, gate dielectric layer, drain, source, and gate. Substrate 1, semiconductor layer, gate dielectric layer, and gate are stacked in sequence. The drain and source are connected to the side of the semiconductor layer facing away from substrate 1 and are separated by the gate dielectric layer. The gate is not in contact with the drain and source. The drain and source have a potential difference. The gate is an Al electrode with an Al2O3 oxide layer on the surface. The gate dielectric layer is an ion gel.

[0008] The TENG component is used to regulate the voltage V applied to the gate. G The TENG components include: a static friction layer and a dynamic friction layer. The dynamic friction layer is electrically connected to the source electrode; the static friction layer is electrically connected to the gate electrode. The static friction layer and the dynamic friction layer have different electron binding abilities. The dynamic friction layer is used to move under the action of an external force F to change the distance between the dynamic friction layer and the static friction layer, and to change V synchronously. G .

[0009] Among them, in V GIn the process of changing from positive voltage to negative voltage, I DS Reaching the negative voltage threshold V 负 When super steep mutation occurs; DS Represents the current flowing from the source through the semiconductor layer to the drain.

[0010] The realization of the TENG-based ultra-steep subthreshold swing field transistor is based on the method or process of an embodiment of the present disclosure.

[0011] In a second aspect, the present invention discloses a method for processing an ultra-steep subthreshold swing field transistor based on TENG in the first aspect, which comprises:

[0012] Step 1: Processing transistor components and TENG components separately;

[0013] Among them, the processing method of transistor components:

[0014] Sputtering a semiconductor material on one side of the substrate by using a mask magnetron sputtering technique under vacuum conditions to form a semiconductor layer;

[0015] Install a source electrode and a drain electrode on the side of the semiconductor layer facing away from the substrate;

[0016] An Al electrode with an Al2O3 oxide layer on its surface is used as a gate, and an ion gel is coated on one side of the gate to form a gate dielectric layer;

[0017] The gate is arranged on the side of the semiconductor layer away from the substrate, and the gate dielectric layer contacts the side of the semiconductor layer away from the substrate, and the source and drain are separated, and the gate is not in contact with the drain and the source;

[0018] Step 2: electrically connect the dynamic friction layer to the source, electrically connect the static friction layer to the gate, and apply an electromotive force to the source and drain to form an ultra-steep subthreshold swing field transistor based on TENG.

[0019] The realization of the processing method of the TENG-based ultra-steep subthreshold swing field transistor is based on the method or process of an embodiment of the present disclosure.

[0020] In a third aspect, the present invention discloses an application of the ultra-steep subthreshold swing field transistor based on TENG in the first aspect:

[0021] The ultra-steep subthreshold swing field transistor based on TENG in the first aspect is used as an artificial synapse;

[0022] Among them, the external mechanical stimulation of the artificial synapse is F; I DS Postsynaptic currents generated as an artificial synapse.

[0023] The present invention has the following beneficial effects:

[0024] 1. The present invention provides an ultra-steep subthreshold swing field transistor based on TENG, which uses the TENG component to generate a voltage V applied to the gate. G , which replaces the supply voltage applied to the gate by the existing field effect transistor; V G It can change with the adjustment of TENG components and make the current I flow from the source through the semiconductor layer to the drain DS In the process of gradually changing from positive voltage to negative voltage, the negative voltage threshold V is reached. 负 An ultra-steep mutation occurs when the voltage is high; the ultra-steep subthreshold swing field transistor based on TENG facilitates gate self-powering and direct interaction between external movement and electronic devices, which is convenient for structural integration.

[0025] 2. The present invention utilizes the positive charge capture effect of the gate oxide layer to play an auxiliary strengthening role when the TENG component generates a positive voltage, so that it can work stably even at a low voltage; and utilizes the high capacitance characteristics of the gate dielectric layer to improve the sensitivity of the semiconductor layer.

[0026] 3. The structure of the present invention has low processing difficulty, is easy to manufacture and integrate, and has an optimistic market prospect.

[0027] 4. The present invention establishes a connection between external mechanical stimulation and internal signals through TENG components, and can generate signals similar to the postsynaptic current of biological synapses, thus realizing the application of artificial synapses. BRIEF DESCRIPTION OF THE DRAWINGS

[0028] In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the accompanying drawings required for use in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings in the following description are only some embodiments of the present invention. For ordinary technicians in this field, other accompanying drawings can be obtained based on these accompanying drawings without paying creative work.

[0029] Figure 1 A schematic structural diagram of an ultra-steep subthreshold swing field transistor based on TENG provided in Example 1 of the present invention;

[0030] Figure 2 for Figure 1 Ultra-steep subthreshold swing field transistor based on TENG at V G It is the state diagram when the voltage is positive;

[0031] Figure 3 for Figure 1 Ultra-steep subthreshold swing field transistor based on TENG at V G The corresponding I when the change occurs DS curve;

[0032] Figure 4for Figure 1 Transfer characteristic curve of the ultra-steep subthreshold swing field transistor based on TENG when the TENG component is working;

[0033] Figure 5 for Figure 1 The postsynaptic current generated by the TENG-based ultra-steep subthreshold swing field transistor as an artificial synapse;

[0034] Figure 6 for Figure 1 Figure 2. The relationship between the double-pulse facilitation index and the pulse interval when the TENG-based ultra-steep subthreshold swing field transistor is used as an artificial synapse.

[0035] In the accompanying drawings, the components represented by the reference numerals are listed as follows:

[0036] 10. Substrate one, 20. Semiconductor layer, 30. Gate dielectric layer, 31. Drain, 32. Source, 33. Al electrode, 34. Al2O3 oxide layer, 41. Static friction layer, 42. Dynamic friction layer, 43. Substrate three, 50. External power supply. DETAILED DESCRIPTION

[0037] In order to make the purpose, technical solution and advantages of the present invention more clearly understood, the present invention is further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present invention and are not used to limit the present invention.

[0038] Example 1

[0039] See also Figure 1 , this embodiment 1 provides a structural schematic diagram of an ultra-steep subthreshold swing field transistor based on TENG, which includes: a transistor component and a TENG component.

[0040] 1. First of all, it should be noted that the transistor component is of NMOS type - when it is turned on, the current flows from the source 32 to the drain 31.

[0041] See also Figure 1 The transistor assembly includes: a substrate 10, a semiconductor layer 20, a gate dielectric layer 30, a drain electrode 31 (i.e. Figure 1 D in), source 32 (i.e. Figure 1 S in), gate.

[0042] The substrate 10, the semiconductor layer 20, the gate dielectric layer 30, and the gate are stacked in sequence. Figure 1 As shown, from top to bottom are: a gate, a gate dielectric layer 30, a semiconductor layer 20, and a substrate 10.

[0043] The drain electrode 31 and the source electrode 32 are connected to the side of the semiconductor layer 20 facing away from the substrate 10 and are separated by the gate dielectric layer 30. It should be noted that the drain electrode 31 and the source electrode 32 form an ohmic contact with the semiconductor layer 20.

[0044] The gate electrode is not in contact with the drain electrode 31 or the source electrode 32. Figure 1 As shown, the gate is lifted up by the gate dielectric layer 30 so as to avoid the drain 31 and the source 32 .

[0045] The drain 31 and the source 32 have a potential difference (generally achieved by connecting an external power supply, which serves as a working power supply for the drain 31 and the source 32. The specific connection method can be set as: the drain 31 is electrically connected to the positive pole of the external power supply, and the source 32 is electrically connected to the negative pole of the external power supply).

[0046] It should be noted that the gate electrode should be an Al electrode 33 with an Al2O3 oxide layer 34 on the surface; and the gate dielectric layer 30 should be an ion gel.

[0047] In addition, the substrate 10 can be made of insulating materials such as a glass substrate; the material of the semiconductor layer 20 is any one of indium oxide, zinc oxide, indium gallium zinc oxide, and tungsten oxide; the material of the drain 31 and the source 32 is one or more alloys of aluminum, titanium, and palladium.

[0048] 2. TENG components are used to regulate the voltage V applied to the gate G .

[0049] The TENG component includes a static friction layer 41 and a dynamic friction layer 42. The dynamic friction layer 42 is electrically connected to the source electrode 32; the static friction layer 41 is electrically connected to the gate electrode. The dynamic friction layer 42 is used to move under the action of an external force F to change the distance between the dynamic friction layer 42 and the static friction layer 41, and synchronously change V G .

[0050] The static friction layer 41 and the dynamic friction layer 42 have different electron binding capabilities; it should be noted that the greater the difference in the electron binding capabilities between the two, the better.

[0051] Considering the working principle of the TENG component, there are several ways to connect it with the transistor component:

[0052] 201. If the static friction layer 41 is an insulating material, a conductive layer 1 is provided on the side facing away from the dynamic friction layer 42; the conductive layer 1 is electrically connected to the source electrode 32 - the conductive layer 1 can be connected to the source electrode 32 through a wire, so that the static friction layer 41 and the source electrode 32 are electrically connected by using the conductive layer 1.

[0053] If the static friction layer 41 is made of a conductive material, the static friction layer 41 and the source electrode 32 may be directly connected by a wire, so that the static friction layer 41 and the source electrode 32 are electrically connected.

[0054] Of course, considering the stability of the static friction layer 41, a second substrate (which may be made of insulating materials such as a glass substrate) may be further provided to support the static friction layer 41. If the static friction layer 41 is made of insulating material, the second substrate is provided on the side of the conductive layer 1 away from the static friction layer 41; if the static friction layer 41 is made of conductive material, the second substrate is provided on the side of the static friction layer 41 away from the dynamic friction layer 42.

[0055] 202. If the dynamic friction layer 42 is an insulating material, a conductive layer 2 is provided on the side facing away from the static friction layer 41; the conductive layer 2 is electrically connected to the gate - the conductive layer 2 can be connected to the gate through a wire, so that the dynamic friction layer 42 is electrically connected to the gate by using the conductive layer 2.

[0056] If the dynamic friction layer 42 is made of a conductive material, the dynamic friction layer 42 and the gate can be directly connected by a wire, so that the dynamic friction layer 42 and the gate are electrically connected.

[0057] Similarly, considering the stability of the dynamic friction layer 42, a substrate 3 43 (which may be made of insulating materials such as a glass substrate) may be added to support the dynamic friction layer 42. If the dynamic friction layer 42 is made of insulating material, the substrate 3 43 is arranged on the side of the conductive layer 2 away from the dynamic friction layer 42; if the dynamic friction layer 42 is made of conductive material, the substrate 3 43 is arranged on the side of the dynamic friction layer 42 away from the static friction layer 41.

[0058] In this embodiment 1, the TENG component adopts the following settings:

[0059] like Figure 1 As shown, the static friction layer 41 is a conductive material, which can be any one of copper, gold, aluminum, and silver; the dynamic friction layer 42 is an insulating material, which can be any one of PTFE, PVDF, Kapton, and nylon; the material of the conductive layer 2 is any one of copper, gold, aluminum, and silver.

[0060] The working principle of the ultra-steep subthreshold swing field transistor based on TENG is explained below with an example:

[0061] In this example, substrate 10 is a glass substrate, semiconductor layer 20 is indium oxide (In2O3), gate dielectric layer 30 is ion gel, drain 31 is a copper electrode, source 32 is a copper electrode, gate is an Al electrode 33 with an Al2O3 oxide layer 34 on the surface, static friction layer 41 is a copper film, dynamic friction layer 42 is a PTFE film, and conductive layer 2 is a copper film.

[0062] Under the action of external force, the TENG component makes the dynamic friction layer 42 and the static friction layer 41 contact or separate, thereby generating an electromotive force based on the friction contact and separation; when the dynamic friction layer 42 is away from the static friction layer 41, the TENG component generates a positive electromotive force and applies it to the gate, that is, a positive voltage V is formed. G When the dynamic friction layer 42 approaches the static friction layer 41, the TENG component generates a negative electromotive force and applies it to the gate, forming a negative voltage V G .

[0063] See also Figure 2 , when V G When the voltage is positive, the Al2O3 oxide layer 34 captures positive charges and forms an additional capacitor layer C TPE ; V G , C TPE The gate dielectric layer 30 is coordinated to make the anions and cations in the gate dielectric layer 30 move locally and directional under the polarization of the electric field force to produce ion stratification; at this time, in the gate dielectric layer 30, the negative ions are gathered on the side close to the gate, and the positive ions are gathered on the side close to the semiconductor layer 20, so that the semiconductor layer 20 gathers negative charges, making the transistor component (i.e., NMOS transistor) conduct. It should be noted that the gate dielectric layer 30 forms a capacitor layer C EDL , C TPE , C EDL The capacitors are connected in series and contribute to the overall effective capacitance to achieve a subthreshold swing value close to the room temperature limit.

[0064] When V G When the voltage is negative, the Al2O3 oxide layer 34 does not capture charges; only V G The gate dielectric layer 30 is acted upon to make the cations and anions in the gate dielectric layer 30 move in a local directional manner; at this time, in the gate dielectric layer 30, positive ions are gathered on the side close to the gate electrode, and negative ions are gathered on the side close to the semiconductor layer 20, so that the gate dielectric layer 30 also produces ion stratification, and the semiconductor layer 20 gathers positive charges to cut off the transistor component (i.e., NMOS transistor).

[0065] It should be noted that in V G In the process of changing from positive voltage to negative voltage, I DS When the negative voltage threshold V 负 When super steep mutation occurs; DS represents the current flowing from the source electrode 32 to the drain electrode 31 through the semiconductor layer 20 .

[0066] Specifically, this is because the Al2O3 oxide layer 34 has an excellent positive charge capture effect, which can scan V G When (V GFrom negative voltage to positive voltage) to capture positive charge stably; while scanning V G When (V G From positive voltage to negative voltage), due to the capture of more positive charges, V G When it reaches 0, the charge cannot be neutralized, but needs to reach the negative voltage threshold V 负 , the charge is suddenly neutralized, and I Ds The scanning variation exceeds 4 orders of magnitude, making the subthreshold swing exhibit ultra-steep characteristics.

[0067] The inventors also conducted simulation verification on the ultra-steep subthreshold swing field transistor based on TENG in this example. Figure 3-Figure 6 .

[0068] like Figure 3 As shown, it shows the electrical transfer characteristic curve of this example: during the test, the potential difference between the drain 31 and the source 32 (i.e., V D ) is 100mV, for V G Perform scanning test in both positive and negative directions (make V G From -5V to +2V, from +2V to -5V), the scanning rate (ie Sweep speed) is 35mV / s.

[0069] When V G At 2 V, the ion stratification of the gate dielectric layer 30 and the negative charge accumulation of the semiconductor layer 20 reach a substantially saturated state.

[0070] The electrical transfer characteristic curve of this example has an electrochemical relaxation window, which is related to the ion type inside the ion gel. In addition, the steepness of the subthreshold swing in the reverse scanning process is significantly higher than that in the forward scanning process, proving that the V G In the process of changing from positive voltage to negative voltage, I DS Around -4V (which can be considered as V 负 =-4V) shows an ultra-steep mutation.

[0071] In addition, the subthreshold swing of the reverse scan characteristic curve is calculated to be close to the physical limit of 60mV / dec.

[0072] like Figure 4As shown, it shows the friction transfer characteristic curve of this example: during the test, the potential difference between the drain 31 and the source 32 is maintained at 100mV, and the TENG component is controlled to perform scanning tests in both positive and negative directions (the dynamic friction layer 42 moves from 1600μm away from the static friction layer 41 to the static friction layer 41, and the dynamic friction layer 42 moves from the static friction layer 41 to the static friction layer 41 away from the static friction layer 41), and the movement rate is 0.1mm / s; it can be seen that the friction transfer characteristic curve presents a counterclockwise loop feature, indicating that the TENG component can provide stable voltage drive to the transistor component.

[0073] Example 2

[0074] This embodiment 2 discloses a method for processing the ultra-steep subthreshold swing field transistor based on TENG of embodiment 1, which comprises:

[0075] Step 1: Processing transistor components and TENG components separately;

[0076] First, the processing method of transistor components:

[0077] S01, sputtering semiconductor material on one side of a substrate 10 (a cleaned glass substrate may be used) under vacuum conditions by using a mask magnetron sputtering technique to form a semiconductor layer 20.

[0078] S102, installing a source electrode 32 and a drain electrode 31 on a side of the semiconductor layer 20 facing away from the substrate 10;

[0079] An Al electrode 33 with an Al 2 O 3 oxide layer 34 on its surface is used as a gate, and an ion gel is coated on one side of the gate by screen printing to form a gate dielectric layer 30 .

[0080] The source 32, drain 31 and gate are processed by using thermal evaporation coating technology to deposit Al electrode 33, and forming the source 32, drain 31 and gate through a customized mask. The gate surface is oxidized to form an Al2O3 oxide layer 34.

[0081] The processing method of the ion gel is as follows: P(VDF-HFP), ionic liquid (including [EMI][TSFA]), and acetone in a mass ratio of 1:4:6 are mixed, heated, and stirred until they are completely dissolved to obtain the ion gel.

[0082] S103, the gate is arranged on the side of the semiconductor layer 20 away from the substrate 10, and the gate dielectric layer 30 contacts the side of the semiconductor layer 20 away from the substrate 10, and the source 32 is separated from the drain 31, and the gate is not in contact with the drain 31 and the source 32.

[0083] Secondly, the processing methods of TENG components include:

[0084] Two materials with different electron binding capabilities are selected and processed into layers, which are used as the static friction layer 41 and the dynamic friction layer 42 respectively; if necessary, any one or more of the conductive layer 1, the conductive layer 2, the substrate 2, and the substrate 3 43 are added.

[0085] Step 2: electrically connect the dynamic friction layer 42 to the source 32, electrically connect the static friction layer 41 to the gate, and apply an electromotive force to the source 32 and the drain 31 to form an ultra-steep subthreshold swing field transistor based on TENG.

[0086] Example 3

[0087] This embodiment 3 discloses the application of the ultra-steep subthreshold swing field transistor based on TENG in embodiment 1 - the ultra-steep subthreshold swing field transistor based on TENG in embodiment 1 is used as an artificial synapse; wherein the external mechanical stimulus to the artificial synapse is F; I DS Postsynaptic currents (PSCs) generated as artificial synapses.

[0088] The application of this embodiment 3 actually utilizes the relaxation effect of ion migration inside the gate dielectric layer 30 and the positive charge capture effect of the gate Al2O3 oxide layer 34 to increase the sensitivity of the device and reduce the energy consumption of the device: the ion gel can form a double electric layer with a nanometer thickness and a huge capacitance of the microfarad level; the Al2O3 oxide layer 34 has a strong positive charge capture ability; the synergistic effect of the two can regulate the carrier state of the semiconductor layer 20 at a low voltage. Then, the TENG component switches between the separation and contact states under the action of the external force F, and senses different potential pressures - this potential pressure can serve as a power source for driving the gate, and can also link the spatiotemporal information generated by the external mechanical stimulus with the output signal.

[0089] Therefore, by controlling the potential pressure parameters through TENG components, short-term plasticity or long-term plasticity of synapses can be achieved to learn memory rules and double-pulse facilitation rules; the relaxation effect of ion migration can be used to achieve excitatory and inhibitory synaptic behaviors, which has the advantages of low power consumption, high sensitivity, simple preparation method, low cost, easy implementation, safety, and environmental protection.

[0090] This Example 3 also simulates and verifies the application of the ultra-steep subthreshold swing field transistor based on TENG in Example 1. Figure 5 , Figure 6 , all indicating that the application of the ultra-steep subthreshold swing field transistor based on TENG disclosed in Example 3 is correct and reasonable.

[0091] Figure 5The PSE curve generated by the external mechanical stimulation on the artificial synapse is shown: the potential difference between the drain 31 and the source 32 is kept at 100 mV; in the initial state, the distance between the dynamic friction layer 42 and the static friction layer 41 is the initial value D0, the artificial synapse is not subjected to external mechanical stimulation (that is, the dynamic friction layer 42 and the static friction layer 41 do not have relative displacement), and the PSC is in a stable horizontal state (about 1.81×10 -4 A); when the external mechanical stimulus applies a displacement of -D to the TENG component (i.e., the dynamic friction layer 42 approaches the static friction layer 41), the TENG component generates an electromotive force and reduces the PSC to (about 1.04×10 -4 A), not only does it show great response efficiency, but the signal change is also highly similar to the postsynaptic current of biological synapses.

[0092] Figure 6 The relationship between the double-pulse facilitation index of artificial synapses and the pulse interval is demonstrated: it can be seen that as the interval between the two light pulse signals decreases, the current caused by the second pulse increases significantly, and the double-pulse facilitation index increases, which is consistent with the double-pulse facilitation behavior of biological synapses.

[0093] The above-mentioned embodiments only express several implementation methods of the present invention, and the description thereof is relatively specific and detailed, but it cannot be understood as limiting the scope of the invention patent. It should be pointed out that for ordinary technicians in this field, several variations and improvements can be made without departing from the concept of the present invention, which all belong to the protection scope of the present invention. Therefore, the protection scope of the patent of the present invention shall be based on the attached claims.

Claims

1. An ultra-steep subthreshold swing field transistor based on TENG, characterized in that: include: A transistor component, which is of NMOS type; The transistor assembly comprises: a substrate, a semiconductor layer, a gate dielectric layer, a drain, a source, and a gate; the substrate, the semiconductor layer, the gate dielectric layer, and the gate are stacked in sequence; the drain and the source are connected to the side of the semiconductor layer facing away from the substrate, and are separated by the gate dielectric layer; the gate is not in contact with the drain and the source; the drain and the source have a potential difference; the gate is an Al electrode with an Al2O3 oxide layer on the surface; the gate dielectric layer is an ion gel; as well as TENG component, which is used to regulate the voltage V applied to the gate G ; The TENG component includes: a static friction layer and a dynamic friction layer; the dynamic friction layer is electrically connected to the source; the static friction layer is electrically connected to the gate; the static friction layer and the dynamic friction layer have different electron binding abilities; the dynamic friction layer is used to move under the action of an external force F to change the distance between the dynamic friction layer and the static friction layer, and synchronously change V G ; Among them, in V G In the process of changing from positive voltage to negative voltage, I DS Reaching the negative voltage threshold V 负 When super steep mutation occurs; DS Represents the current flowing from the source through the semiconductor layer to the drain.

2. The ultra-steep subthreshold swing field transistor based on TENG according to claim 1, characterized in that: When V G When the voltage is positive, the Al2O3 oxide layer captures positive charges and forms an additional capacitance layer C TPE ; V G , C TPE Coordinate the action on the gate dielectric layer to cause ion stratification in the gate dielectric layer; At this time, in the gate dielectric layer, negative ions gather on the side close to the gate and positive ions gather on the side close to the semiconductor layer. The semiconductor layer then gathers negative charges to turn on the transistor component.

3. The ultra-steep subthreshold swing field transistor based on TENG according to claim 1, characterized in that: When V G When the voltage is negative, the Al2O3 oxide layer does not capture charge; only V G Acting on the gate dielectric layer to cause ion stratification in the gate dielectric layer; At this time, in the gate dielectric layer, positive ions gather on the side close to the gate and negative ions gather on the side close to the semiconductor layer. The semiconductor layer then gathers positive charges, cutting off the transistor component.

4. The ultra-steep subthreshold swing field transistor based on TENG according to claim 1, characterized in that: The static friction layer is an insulating material, and a conductive layer 1 is disposed on a side of the static friction layer facing away from the dynamic friction layer; the conductive layer 1 is electrically connected to the source electrode; Alternatively, the static friction layer is a conductive material.

5. The ultra-steep subthreshold swing field transistor based on TENG according to claim 4, characterized in that: The TENG component further includes: a second substrate; the second substrate is used to support the static friction layer; If the static friction layer is made of insulating material, the second substrate is arranged on the side of the conductive layer 1 facing away from the static friction layer; If the static friction layer is made of conductive material, the second substrate is disposed on a side of the static friction layer facing away from the dynamic friction layer.

6. The ultra-steep subthreshold swing field transistor based on TENG according to claim 1, characterized in that: The dynamic friction layer is made of insulating material, and a second conductive layer is disposed on a side of the dynamic friction layer facing away from the static friction layer; the second conductive layer is electrically connected to the gate; Alternatively, the dynamic friction layer is a conductive material.

7. The ultra-steep subthreshold swing field transistor based on TENG according to claim 6, characterized in that: The TENG component further includes: a substrate three; the substrate three is used to support the dynamic friction layer; If the dynamic friction layer is made of insulating material, the substrate three is arranged on a side of the conductive layer two away from the dynamic friction layer; If the dynamic friction layer is made of conductive material, the substrate three is arranged on a side of the dynamic friction layer facing away from the static friction layer.

8. The ultra-steep subthreshold swing field transistor based on TENG according to claim 1, characterized in that: The material of the semiconductor layer is any one of indium oxide, zinc oxide, indium gallium zinc oxide, and tungsten oxide; Or / and, the material of the drain electrode and the source electrode is one or more alloys of aluminum, titanium, palladium; Or / and, the material of the static friction layer is any one of copper, gold, aluminum, and silver; the material of the dynamic friction layer is any one of PTFE, PVDF, Kapton, and nylon.

9. The method for processing the ultra-steep subthreshold swing field transistor based on TENG according to any one of claims 1 to 8, characterized in that: It includes: Step 1: Processing transistor components and TENG components separately; Among them, the processing method of transistor components: Sputtering a semiconductor material on one side of the substrate by using a mask magnetron sputtering technique under vacuum conditions to form a semiconductor layer; Install a source electrode and a drain electrode on the side of the semiconductor layer facing away from the substrate; An Al electrode with an Al2O3 oxide layer on its surface is used as a gate, and an ion gel is coated on one side of the gate by screen printing to form a gate dielectric layer; The gate is arranged on the side of the semiconductor layer away from the substrate, and the gate dielectric layer contacts the side of the semiconductor layer away from the substrate, and the source and drain are separated, and the gate is not in contact with the drain and the source; Step 2: electrically connect the dynamic friction layer to the source, electrically connect the static friction layer to the gate, and apply an electromotive force to the source and drain to form an ultra-steep subthreshold swing field transistor based on TENG.

10. Application of ultra-steep subthreshold swing field transistor based on TENG, characterized in that: Using the ultra-steep subthreshold swing field transistor based on TENG as described in any one of claims 1 to 8 as an artificial synapse; Among them, the external mechanical stimulation of the artificial synapse is taken as F; I DS Postsynaptic currents (PSCs) generated as artificial synapses.

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