Perovskite photovoltaic cell and preparation method thereof

Abstract

The invention relates to a perovskite photovoltaic cell and a preparation method thereof, the perovskite photovoltaic cell sequentially comprises a composite substrate, a transparent electrode layer, a hole transport layer, a barrier protection layer, a perovskite light absorption layer, a passivation layer, an electron transport layer and a top electrode layer, the composite substrate comprises an ultraviolet light removal layer and two glass layers, the ultraviolet light removing layer is located between the two glass layers. According to the perovskite photovoltaic cell, the durability and the stability are improved, and the service life of the cell is greatly prolonged.

Description

Technical Field

[0001] The present invention relates to the technical field of perovskite photovoltaic cells, and in particular to a perovskite photovoltaic cell and a preparation method thereof. Background Art

[0002] Perovskite photovoltaic cells have the advantages of low raw material cost, low energy consumption in the preparation process, and high production efficiency. The cost of its components is only 50% of the ultimate cost of crystalline silicon cell components. In addition, the perovskite material of perovskite photovoltaic cells has the advantages of high absorption coefficient, long carrier lifetime, high carrier mobility, low exciton binding energy, and wide adjustable band gap, which makes perovskite photovoltaic cells have higher conversion efficiency than crystalline silicon cells.

[0003] However, the short service life of perovskite photovoltaic cells is due to the following factors, which has become an important factor restricting the industrialization of perovskite:

[0004] 1. Perovskite materials themselves are highly unstable and can be easily decomposed rapidly under the influence of water, oxygen, heat and other environments;

[0005] 2. Perovskite materials are prone to decomposition when exposed to ultraviolet light. The reaction equation is as follows:

[0006]

[0007] 3. The functional layers in perovskite photovoltaic cells are prone to interact with the perovskite light absorption layer. For example, metal atoms in the top electrode layer can enter the perovskite light absorption layer through diffusion, causing the perovskite material to decompose, and the built-in electric field formed by the photovoltaic effect will intensify the diffusion of metal atoms, thereby accelerating the decomposition. For example, the halogen ions in the perovskite material will diffuse into the top electrode layer, causing corrosion to the top electrode layer, thereby affecting the performance of the perovskite photovoltaic cell. For example, failure of material performance in any link will lead to product performance degradation, thereby affecting the stability of the battery. Summary of the invention

[0008] The technical problem to be solved by the present invention is to provide a perovskite photovoltaic cell, which not only improves durability and stability, but also greatly extends the service life of the battery.

[0009] The technical solution adopted by the present invention to solve its technical problems is: a perovskite photovoltaic cell, which includes a composite substrate, a transparent electrode layer, a hole transport layer, a blocking protective layer, a perovskite light absorption layer, a passivation layer, an electron transport layer and a top electrode layer in sequence, and the composite substrate includes an ultraviolet light removal layer and two glass layers, and the ultraviolet light removal layer is located between the two glass layers.

[0010] In one of the embodiments, the ultraviolet light removal layer of the perovskite photovoltaic cell includes an ultraviolet light absorbing material, an ultraviolet light cutting material or an ultraviolet light converting material.

[0011] In one of the embodiments, the transparent electrode layer of the perovskite photovoltaic cell includes at least one of indium tin oxide (ITO), fluorine tin oxide (FTO) and aluminum-doped zinc oxide (AZO).

[0012] In one of the embodiments, the hole transport layer of the perovskite photovoltaic cell includes at least one of nickel (Ni), molybdenum (Mo) or copper (Cu) second metal oxides.

[0013] In one of the embodiments, the barrier protection layer of the perovskite photovoltaic cell includes at least one of nickel (Ni), molybdenum (Mo) or copper (Cu) second metal oxides.

[0014] In one embodiment, the perovskite light absorption layer of the perovskite photovoltaic cell is an ABX3 structure, and the ABX3 structure includes an A position, a B position and an X position, the A position is an organic cation, and the organic cation includes at least one of methylammonium ion, formamidine ion or inorganic cation Cs+, the B position is a metal cation, and the metal cation includes at least one of Pb+, Cs+, Sn+, Zn+, Ti+, Ni+, Mg+, Ca+ or In+, and the X position is a halogen anion, and the halogen anion includes at least one of Cl-, Br-, I- or F-.

[0015] In one of the embodiments, the passivation layer of the perovskite photovoltaic cell includes at least one of fullerene, fullerene derivatives, aluminum oxide, magnesium fluoride, lithium fluoride or sodium fluoride.

[0016] In one embodiment, the electron transport layer of the perovskite photovoltaic cell includes at least one of zinc oxide, silicon oxide, titanium oxide, strontium titanate, calcium titanate, lithium fluoride, tin oxide, tungsten sulfide, tungsten oxide or indium gallium zinc oxide.

[0017] In one of the embodiments, the top electrode layer of the perovskite photovoltaic cell includes at least one of carbon (C), gold (Au), silver (Ag), copper (Cu), aluminum (Al), molybdenum (MO), indium tin oxide (ITO) or aluminum-doped zinc oxide (AZO).

[0018] A method for preparing a perovskite photovoltaic cell, the specific steps are as follows:

[0019] The first step: preparing an ultraviolet light removal layer between two glass layers by a grouting method or a lamination method to form a composite substrate with ultraviolet light absorption function, ultraviolet light cutoff function or ultraviolet light conversion function;

[0020] Step 2: preparing a transparent electrode layer on the composite substrate by at least one of chemical vapor deposition, magnetron sputtering coating, evaporation coating, pulsed laser deposition, reactive plasma deposition, facing target coating, atomic layer deposition or electron beam deposition;

[0021] Step 3: preparing a hole transport layer on the transparent electrode layer by at least one of chemical vapor deposition, magnetron sputtering coating, evaporation coating, pulsed laser deposition, reactive plasma deposition, facing target coating, atomic layer deposition or electron beam deposition;

[0022] Step 4: Prepare a blocking protective layer on the hole transport layer using an atomic layer deposition process;

[0023] Step 5: preparing a perovskite light absorption layer on the barrier protective layer by at least one of a doctor blade coating method, a slit coating method, a screen printing method, a spray coating method, an inkjet printing method, a soft film coating method or an evaporation coating method;

[0024] Step 6: preparing a passivation layer on the perovskite light absorption layer by at least one of a facing target coating, reactive plasma deposition, a doctor blade coating method, a slit coating method, a screen printing method, a spray coating method, an inkjet printing method or a soft film coating method;

[0025] Step 7: preparing an electron transport layer on the passivation layer by at least one of chemical vapor deposition, magnetron sputtering coating, evaporation coating, pulsed laser deposition, reactive plasma deposition, facing target coating, atomic layer deposition or electron beam deposition;

[0026] Step 8: Prepare a top electrode layer on the electron transport layer by at least one of chemical vapor deposition, magnetron sputtering, evaporation, pulsed laser deposition, reactive plasma deposition, facing target coating, atomic layer deposition or electron beam deposition.

[0027] The beneficial effects of this application are:

[0028] The present application provides a perovskite photovoltaic cell, which effectively improves the stability and durability of the perovskite photovoltaic cell and greatly extends the service life of the cell by sequentially arranging a composite substrate, a transparent electrode layer, a hole transport layer, a blocking protective layer, a perovskite light absorption layer, a passivation layer, an electron transport layer and a top electrode layer.

[0029] The perovskite photovoltaic cell uses an ultraviolet light removal layer to effectively remove ultraviolet light from sunlight, solving the problem of decomposition of the perovskite light absorption layer when exposed to ultraviolet light, and effectively improving the stability of the cell.

[0030] The perovskite photovoltaic cell can effectively reduce the surface activity of the perovskite light absorption layer by setting a passivation layer on the perovskite light absorption layer, thereby reducing the surface carrier recombination efficiency, thereby improving the photoelectric conversion efficiency of the cell. In addition, the passivation layer can have high mechanical strength and chemical stability while maintaining light transmittance.

[0031] The electron transport layer of the perovskite photovoltaic cell can not only be used to transport electrons and block holes, but also effectively improves problems such as energy band mismatch, carrier recombination and chemical reaction between interfaces, thereby improving the charge separation and collection efficiency in the perovskite cell and effectively improving the stability of the cell.

[0032] The preparation method of the perovskite photovoltaic cell uses an atomic layer deposition process to prepare a high-density, pinhole-free film on the hole transport layer as a barrier protection layer for the perovskite photovoltaic cell, which can effectively block the damage of water and oxygen to the perovskite light absorption layer, avoid the decomposition of the perovskite light absorption layer when it encounters water and oxygen, and improve the stability of the perovskite photovoltaic cell. BRIEF DESCRIPTION OF THE DRAWINGS

[0033] Figure 1 A schematic diagram of a perovskite photovoltaic cell according to an embodiment of the present application;

[0034] in:

[0035] 1. Composite substrate; 2. Transparent electrode layer; 3. Hole transport layer; 4. Blocking protection layer; 5. Perovskite light absorption layer; 6. Passivation layer; 7. Electron transport layer; 8. Top electrode layer; 11. Ultraviolet light removal layer; 12. Glass layer. DETAILED DESCRIPTION

[0036] In order to make the above-mentioned objects, features and advantages of the present invention more obvious and easy to understand, the specific embodiments of the present invention are described in detail below with reference to the accompanying drawings.

[0037] like Figure 1 As shown, an embodiment of the present application provides a perovskite photovoltaic cell, which includes a composite substrate 1, a transparent electrode layer 2, a hole transport layer 3, a blocking protective layer 4, a perovskite light absorption layer 5, a passivation layer 6, an electron transport layer 7 and a top electrode layer 8 in sequence, wherein the composite substrate 1 includes an ultraviolet light removal layer 11 and two glass layers 12, and the ultraviolet light removal layer 11 is located between the two glass layers 12.

[0038] Specifically, a UV removal layer 11 is first prepared between two glass layers 12 by a grouting method or a lamination method to form a composite substrate 1 with UV light absorption function, UV light cutoff function or UV light conversion function, and then a transparent electrode layer 2, a hole transport layer 3, a blocking protective layer 4, a perovskite light absorption layer 5, a passivation layer 6, an electron transport layer 7 and a top electrode layer 8 are prepared in sequence to finally form a perovskite photovoltaic cell.

[0039] The above structure effectively improves the stability and durability of perovskite photovoltaic cells and greatly extends the service life of the batteries.

[0040] In one embodiment, the ultraviolet light removal layer 11 of the perovskite photovoltaic cell includes an ultraviolet light absorbing material, an ultraviolet light cutting material or an ultraviolet light conversion material. The ultraviolet light removal layer 11 with ultraviolet light absorbing function includes ethylene and methacrylic acid copolymer (SGP) or vinyl butyral (PVB). The ultraviolet light removal layer 11 with ultraviolet light cutting function includes ethylene tetrafluoroethylene. The ultraviolet light removal layer 11 with ultraviolet light conversion function includes an organic compound with a triazole structure and an unsaturated double bond structure.

[0041] In one embodiment, the transparent electrode layer 2 of the perovskite photovoltaic cell includes at least one of indium tin oxide (ITO), fluorine tin oxide (FTO) and aluminum-doped zinc oxide (AZO). Fluorine tin oxide (FTO) is preferably used as the transparent electrode layer 2. Fluorine tin oxide (FTO) has better chemical durability and mechanical resistance than indium tin oxide (ITO) and aluminum-doped zinc oxide (AZO).

[0042] In one embodiment, the hole transport layer 3 of the perovskite photovoltaic cell includes at least one of nickel (Ni), molybdenum (Mo) or copper (Cu) second metal oxides. The second metal oxide of nickel is nickel oxide (NiOx), the second metal oxide of molybdenum is molybdenum oxide, and the second metal oxide of copper is copper oxide. Nickel oxide (NiOx) is preferred. Nickel oxide (NiOx), molybdenum oxide, copper oxide, etc. are inorganic materials, which have the advantages of strong chemical stability, high hole mobility, low preparation cost, and easy synthesis compared with the organic materials of the traditional hole transport layer 3.

[0043] In one embodiment, the barrier protective layer 4 of the perovskite photovoltaic cell includes at least one of nickel (Ni), molybdenum (Mo) or copper (Cu) second metal oxides. The second metal oxide of nickel is nickel oxide (NiOx), the second metal oxide of molybdenum is molybdenum oxide, and the second metal oxide of copper is copper oxide. Nickel oxide (NiOx), molybdenum oxide, copper oxide, etc. are inorganic materials, and compared with the organic materials of the traditional hole transport layer 3, they have the advantages of strong chemical stability, high hole mobility, low preparation cost, and easy synthesis.

[0044] In one embodiment, the perovskite light absorption layer 5 of the perovskite photovoltaic cell is an ABX3 structure, and the ABX3 structure includes an A position, a B position and an X position, the A position is an organic cation, and the organic cation includes at least one of methylammonium ion, formamidine ion or inorganic cation Cs+, the B position is a metal cation, and the metal cation includes at least one of Pb+, Cs+, Sn+, Zn+, Ti+, Ni+, Mg+, Ca+ or In+, and the X position is a halogen anion, and the halogen anion includes at least one of Cl-, Br-, I- or F-.

[0045] In one embodiment, the passivation layer 6 of the perovskite photovoltaic cell includes at least one of fullerene, fullerene derivatives, aluminum oxide, magnesium fluoride, lithium fluoride or sodium fluoride. Fullerene (C60) is preferred. The provision of the passivation layer 6 can reduce the surface activity of the perovskite light absorption layer 5, reduce the surface carrier recombination efficiency, and thus improve the photoelectric conversion efficiency of the battery. The passivation layer 6 has high mechanical safety, chemical stability and hygroscopicity, and can protect the perovskite light absorption layer 5 during subsequent battery operation or subsequent preparation of other functional layers, thereby improving the stability of the perovskite photovoltaic cell.

[0046] In one embodiment, the electron transport layer 7 of the perovskite photovoltaic cell includes at least one of zinc oxide, silicon oxide, titanium oxide, strontium titanate, calcium titanate, lithium fluoride, tin oxide (SnOx), tungsten sulfide, tungsten oxide or indium gallium zinc oxide. The electron transport layer 7 is not only used to transmit electrons and block holes, but also can effectively improve the problems of energy band mismatch, carrier recombination and chemical reaction between interfaces, thereby improving the charge separation and collection efficiency in the perovskite cell, and effectively improving the stability of the perovskite photovoltaic cell.

[0047] In one embodiment, the top electrode layer 8 of the perovskite photovoltaic cell includes at least one of carbon (C), gold (Au), silver (Ag), copper (Cu), aluminum (Al), molybdenum (MO), indium tin oxide (ITO) or aluminum-doped zinc oxide (AZO). Carbon (C) material is preferably used as the top electrode layer 8, and the carbon (C) material has the advantages of abundant sources, low cost, good conductivity, good chemical stability, etc., and the work function of the carbon (C) material is similar to that of gold.

[0048] like Figure 1 As shown, a method for preparing a perovskite photovoltaic cell, the specific steps are as follows:

[0049] Step 1: preparing an ultraviolet light removal layer 11 between two glass layers 12 by a grouting method or a lamination method to form a composite substrate 1 having an ultraviolet light absorption function, an ultraviolet light cutoff function or an ultraviolet light conversion function;

[0050] Step 2: preparing a transparent electrode layer 2 on the composite substrate 1 by at least one of chemical vapor deposition, magnetron sputtering coating, evaporation coating, pulsed laser deposition, reactive plasma deposition, facing target coating, atomic layer deposition or electron beam deposition;

[0051] Step 3: Prepare a hole transport layer 3 on the transparent electrode layer 2 by at least one of chemical vapor deposition, magnetron sputtering coating, evaporation coating, pulsed laser deposition, reactive plasma deposition, opposed target coating, atomic layer deposition or electron beam deposition, wherein the magnetron sputtering coating method includes RF magnetron sputtering coating and DC magnetron sputtering coating.

[0052] Step 4: Prepare a blocking protection layer 4 on the hole transport layer 3 by using an atomic layer deposition process;

[0053] Step 5: preparing a perovskite light absorption layer 5 on the barrier protection layer 4 by at least one of a doctor blade coating method, a slit coating method, a screen printing method, a spray coating method, an inkjet printing method, a soft film coating method or an evaporation coating method;

[0054] Step 6: prepare a passivation layer 6 on the perovskite light absorption layer 5 by at least one of a facing target coating, reactive plasma deposition, a doctor blade coating method, a slit coating method, a screen printing method, a spray coating method, an inkjet printing method or a soft film coating method;

[0055] Step 7: preparing an electron transport layer 7 on the passivation layer 6 by at least one of chemical vapor deposition, magnetron sputtering, evaporation, pulsed laser deposition, reactive plasma deposition, facing target deposition, atomic layer deposition or electron beam deposition;

[0056] Step 8: Prepare a top electrode layer 8 on the electron transport layer 7 by at least one of chemical vapor deposition, magnetron sputtering, evaporation, pulsed laser deposition, reactive plasma deposition, facing target coating, atomic layer deposition or electron beam deposition.

[0057] The following is the best preparation example:

[0058] Step 1: preparing vinyl butyral (PVB) as an ultraviolet light removal layer 11 between two glass layers 12 by a lamination method to form a composite substrate 1 with ultraviolet light absorption function;

[0059] Step 2: using chemical vapor deposition to prepare fluorine tin oxide (FTO) with a thickness of about 110 nm as a transparent electrode layer 2 on the composite substrate 1;

[0060] Step 3: Use RF magnetron sputtering coating process to prepare nickel oxide (NiOx) of about 17nm on the FTO layer as the hole transport layer 3;

[0061] Step 4: using an atomic layer deposition process to prepare nickel oxide (NiOx) of about 5 nm on the hole transport layer 3 as a blocking protection layer 4;

[0062] Step 5: Prepare a perovskite light absorption layer 5 of about 520 nm on the blocking protection layer 4 by a slit coating method;

[0063] Step 6: Prepare fullerene and its derivatives (C60) of about 18 nm as the passivation layer 6 on the perovskite light absorption layer 5 by a slit coating method;

[0064] Step 7: Using a facing target coating process to prepare tin oxide (SnOx) of about 50 nm on the passivation layer 6 as the electron transport layer 7;

[0065] Step 8: Using a magnetron sputtering coating process, indium tin oxide (ITO) with a thickness of about 30 nm and copper (Cu) with a thickness of about 40 nm are sequentially prepared on the electron transport layer 7 as the top electrode layer 8 .

[0066] The preparation method of Comparative Example 1 is as follows:

[0067] Step 1: preparing a PVB ultraviolet light removal layer 11 by a lamination method to form a composite substrate 1 with ultraviolet light absorption function;

[0068] Step 2: using chemical vapor deposition method to prepare FTO with a thickness of about 110 nm as a transparent electrode layer 2 on the composite substrate 1;

[0069] Step 3: Prepare NiOx with a thickness of about 22 nm as the hole transport layer 3 on the transparent electrode layer 2 by using RF magnetron sputtering process;

[0070] Step 4: Prepare a perovskite light absorption layer 5 of about 520 nm on the hole transport layer 3 by using a slit coating process;

[0071] Step 5: Prepare C60 with a thickness of about 18 nm as a passivation layer 6 on the perovskite light absorption layer 5 by using a slit coating process;

[0072] Step 6: Prepare SnOx with a thickness of about 50 nm as the electron transport layer 7 on the passivation layer 6 by using a reactive opposing target coating process;

[0073] Step 7: Using magnetron sputtering technology, about 30 nm of ITO and 40 nm of Cu are sequentially prepared on the electron transport layer 7 as the top electrode layer 8.

[0074] The preparation method of comparative example 2 is as follows:

[0075] Step 1: Using chemical vapor deposition method to prepare FTO with a thickness of about 110 nm as transparent electrode layer 2 on a common substrate without UV removal function;

[0076] Step 2: Prepare NiOx with a thickness of about 17 nm as the hole transport layer 3 on the transparent electrode layer 2 by using RF magnetron sputtering process;

[0077] Step 3: Prepare NiOx with a thickness of about 5 nm as a blocking protective layer 4 on the hole transport layer 3 by using an atomic layer deposition process;

[0078] Step 4: Prepare a perovskite light absorption layer 5 of about 520 nm on the blocking protection layer 4 by using a slit coating process;

[0079] Step 5: Prepare C60 with a thickness of about 18 nm as a passivation layer 6 on the perovskite light absorption layer 5 by using a slit coating process;

[0080] Step 6: Prepare SnOx with a thickness of about 50 nm as the electron transport layer 7 on the passivation layer 6 by using a reactive opposing target coating process;

[0081] Step 7: Using magnetron sputtering technology, about 30 nm of ITO and 40 nm of Cu are sequentially prepared on the electron transport layer 7 as the top electrode layer 8.

[0082] The preparation method of comparative example 3 is as follows:

[0083] The first step: preparing a PVB ultraviolet light absorbing layer by a lamination method to form a composite substrate 1 with ultraviolet light absorbing function;

[0084] Step 2: using chemical vapor deposition method to prepare FTO with a thickness of about 110 nm as a transparent electrode layer 2 on the composite substrate 1;

[0085] Step 3: Prepare PEDOT:PSS with a thickness of about 35 nm as the hole transport layer 3 on the transparent electrode layer 2 by using a slit coating process;

[0086] Step 4: Prepare a perovskite light absorption layer 5 of about 520 nm on the hole transport layer 3 by using a slit coating process;

[0087] Step 5: Prepare C60 with a thickness of about 18 nm as a passivation layer 6 on the perovskite light absorption layer 5 by using a slit coating process;

[0088] Step 6: Prepare SnOx with a thickness of about 50 nm as the electron transport layer 7 on the passivation layer 6 by using a reactive opposing target coating process;

[0089] Step 7: Using magnetron sputtering technology, about 30 nm of ITO and 40 nm of Cu are sequentially prepared on the electron transport layer 7 as the top electrode layer 8.

[0090] By conducting efficiency and stability performance tests on the above optimal preparation example and three comparative examples and conducting outdoor weathering tests, the test results are as follows:

[0091]

[0092] The conclusion is as follows:

[0093] 1. Compared with the optimal preparation embodiment of the present application, the preparation method of comparative example 1 does not include a blocking protective layer 4, and other functional layers are the same. It can be seen from the above comparative test data that after 18 months of outdoor operation, the efficiency decay of the photovoltaic cell of comparative example 1 is significantly lower than that of the embodiment of the present application. It can be seen that setting a blocking protective layer 4 does help to enhance the efficiency stability of perovskite solar cells.

[0094] 2. Compared with the optimal preparation embodiment of the present application, the preparation method of comparative example 2 does not include the ultraviolet light removal layer 11, and the other layers are the same. It can be seen from the above comparative test data that after 18 months of outdoor operation, the efficiency attenuation of the photovoltaic cell corresponding to comparative example 2 is significantly lower than that of the embodiment of the present application. It can be seen that setting the blocking protective layer 4 does help to enhance the efficiency stability of the perovskite solar cell.

[0095] 3. Compared with the optimal preparation example, comparative example 1 and comparative example 2 of the present application, comparative example 3 does not have a blocking protective layer 4, uses PEDOT:PSS as the hole transport layer 3, and the other layers are basically the same. The initial efficiency of comparative example 3 is significantly low, and the efficiency decay of the photovoltaic cell is significantly fast. It can be seen that the structure of the present application is indeed helpful to enhance the efficiency stability of perovskite solar cells.

[0096] In summary, the perovskite photovoltaic cell of the present application effectively improves the durability and stability of the battery and extends the service life of the battery.

[0097] The above-mentioned embodiments only express several implementation methods of the present invention, and the descriptions thereof are relatively specific and detailed, but they cannot be understood as limiting the scope of the invention patent. It should be pointed out that, for ordinary technicians in this field, several variations and improvements can be made without departing from the concept of the present invention, and these all belong to the protection scope of the present invention. Therefore, the protection scope of the patent of the present invention shall be subject to the attached claims.

Claims

1. A perovskite photovoltaic cell, characterized in that: The composite substrate (1) comprises a composite substrate (1), a transparent electrode layer (2), a hole transport layer (3), a blocking protective layer (4), a perovskite light absorption layer (5), a passivation layer (6), an electron transport layer (7) and a top electrode layer (8), wherein the composite substrate (1) comprises an ultraviolet light removal layer (11) and two glass layers (12), wherein the ultraviolet light removal layer (11) is located between the two glass layers (12).

2. The perovskite photovoltaic cell according to claim 1, characterized in that: The ultraviolet light removal layer (11) comprises an ultraviolet light absorbing material, an ultraviolet light cutting material or an ultraviolet light converting material.

3. The perovskite photovoltaic cell according to claim 1, characterized in that: The transparent electrode layer (2) comprises at least one of indium tin oxide, fluorine tin oxide or aluminum-doped zinc oxide.

4. The perovskite photovoltaic cell according to claim 1, characterized in that: The hole transport layer (3) comprises at least one of nickel, molybdenum or copper second metal oxides.

5. The perovskite photovoltaic cell according to claim 1, characterized in that: The barrier protection layer (4) comprises at least one of nickel, molybdenum or copper second metal oxides.

6. The perovskite photovoltaic cell according to claim 1, characterized in that: The perovskite light absorption layer (5) is an ABX3 structure, and the ABX3 structure includes an A position, a B position and an X position. The A position is an organic cation, and the organic cation includes at least one of methylammonium ion, methylammonium ion or inorganic cation Cs+. The B position is a metal cation, and the metal cation includes at least one of Pb+, Cs+, Sn+, Zn+, Ti+, Ni+, Mg+, Ca+ or In+. The X position is a halogen anion, and the halogen anion includes at least one of Cl-, Br-, I- or F-.

7. The perovskite photovoltaic cell according to claim 1, characterized in that: The passivation layer (6) comprises at least one of fullerene, fullerene derivatives, aluminum oxide, magnesium fluoride, lithium fluoride or sodium fluoride.

8. The perovskite photovoltaic cell according to claim 1, characterized in that: The electron transport layer (7) comprises at least one of zinc oxide, silicon oxide, titanium oxide, strontium titanate, calcium titanate, lithium fluoride, tin oxide, tungsten sulfide, tungsten oxide or indium gallium zinc oxide.

9. The perovskite photovoltaic cell according to claim 1, characterized in that: The top electrode layer (8) comprises at least one of carbon, gold, silver, copper, aluminum, molybdenum, indium tin oxide or aluminum-doped zinc oxide.

10. A method for preparing the perovskite photovoltaic cell according to claim 1, characterized in that: The specific steps are as follows: The first step is to prepare an ultraviolet light removal layer (11) between two glass layers (12) to form a composite substrate (1); Step 2: preparing a transparent electrode layer (2) on the composite substrate (1); Step 3: preparing a hole transport layer (3) on the transparent electrode layer (2); Step 4: preparing a blocking protective layer (4) on the hole transport layer (3); Step 5: preparing a perovskite light absorbing layer (5) on the blocking protective layer (4); Step 6: preparing a passivation layer (6) on the perovskite light absorption layer (5); Step 7: preparing an electron transport layer (7) on the passivation layer (6); Step 8: preparing a top electrode layer (8) on the electron transport layer (7).

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