End effector

Abstract

An end effector for supporting a wafer has a temperature sensor configured to sense a temperature of the wafer supported by the end effector.

Description

CROSS-REFERENCE TO RELATED APPLICATIONS

[0001] This application claims the benefit of U.S. Provisional Application No. 63 / 358,352, filed on July 5, 2022. The entire disclosure of the above application is incorporated herein by reference. Technical Field

[0002] The invention relates to an end effector, in particular to an end effector with a temperature sensor. Background Art

[0003] Microelectronic devices are manufactured on semiconductor (eg silicon) wafers using a variety of techniques including deposition techniques as well as removal techniques. The semiconductor wafers may be further processed in a way that alters their quality, such as by cleaning, ion implantation, photolithography, etc.

[0004] Measuring the variation in wafer mass across processing steps is an attractive approach to achieving production wafer metrology. It is relatively low cost, fast, and automatically adapts to different wafer circuit patterns. In addition, it generally provides higher accuracy results than other techniques. The wafer is weighed before and after the processing step of interest. The variation in mass is related to the performance of the production equipment and / or the desired characteristics of the wafer.

[0005] The processing steps performed on a semiconductor wafer may cause very small changes in the mass of the semiconductor wafer, and these changes may need to be measured with high precision. For example, removing a small amount of material from the surface of a semiconductor wafer may reduce the mass of the semiconductor wafer by a few milligrams, and the resolution of measuring this change needs to be ±100μg or better.

[0006] At such a high level of measurement accuracy, errors in the measurement output caused by temperature variations in the measured semiconductor wafer and / or temperature variations in the measuring device can become significant. For example, a temperature difference of about 0.005°C between the semiconductor wafer and the measuring balance or housing can result in an error of about 5 μg in the measured mass of the semiconductor wafer.

[0007] For example, if the temperature of the semiconductor wafer is higher than the temperature of the measurement chamber of the measurement device, the air in the measurement chamber may generate air flow (e.g., convection), which may affect the measurement output. In addition, the air in the measurement chamber may be heated, changing its density and pressure, and thus changing the buoyancy force exerted by the air on the semiconductor wafer. This may also affect the measurement output.

[0008] Immediately after a semiconductor wafer is processed in a production line, its temperature may reach 400-500°C or higher. After processing, the semiconductor wafer may be loaded into a front opening wafer transport box (FOUP) together with other recently processed semiconductor wafers for transportation between different processing locations in the production line. When the FOUP arrives at a weighing device that weighs the semiconductor wafer, the temperature of the semiconductor wafer may still be very high, such as 70°C or higher. In contrast, the temperature of the weighing device may be about 20°C. Therefore, there may be a significant temperature difference between the semiconductor wafer and the weighing device.

[0009] WO02 / 03449 (the entire contents of which are incorporated herein by reference) describes a semiconductor wafer mass metrology method which aims to reduce measurement output errors caused by temperature changes of a measuring balance or a semiconductor wafer being measured. In the method described in WO02 / 03449, a semiconductor wafer is taken out of a FOUP and placed on a passive thermally conductive plate which is thermally coupled to a chamber of a weighing device and then placed on a measuring area of ​​the weighing device. The passive thermally conductive plate maintains the temperature of the semiconductor wafer within ±0.1°C of the temperature of the chamber.

[0010] WO2015 / 082874 (the entire contents of which are incorporated herein by reference) describes a development of the semiconductor wafer mass metrology method described in WO02 / 03449, wherein a majority of the heat load is removed from the semiconductor wafer before the temperature of the semiconductor wafer is equalized with the temperature of the semiconductor wafer mass metrology device using a heat conducting plate, so as to reduce the heat load on the semiconductor wafer mass metrology device (which might otherwise result in temperature variations of the semiconductor wafer mass metrology device).

[0011] In the embodiment disclosed in WO2015 / 082874, most of the heat load is removed from the semiconductor chip using an active heat conductive plate, in which the heat load is actively dissipated using a thermoelectric device, and then the temperature of the semiconductor chip is substantially equal to the temperature of the measurement chamber using a passive heat conductive plate, which is mounted on the upper surface of the measurement chamber and is in thermal equilibrium with the measurement chamber.

[0012] WO2020 / 064470 (the entire contents of which are incorporated herein by reference) discloses that the time required to change the temperature of a semiconductor wafer using a thermally conductive plate (e.g., an active thermally conductive plate) can be shortened by taking into account the initial incoming temperature of the semiconductor wafer when subsequently cooling or heating the semiconductor wafer, for example, so that the time to cool a cooler semiconductor wafer does not take as long as the time to cool a hotter semiconductor wafer, or, for example, if the temperature of the semiconductor wafer is already equal to a predetermined temperature or within a predetermined range of a predetermined temperature, it is not cooled at all. Thus, the yield and productivity of semiconductor wafer processing can be improved.

[0013] In particular, WO2020 / 064470 discloses detecting information related to the temperature of a semiconductor wafer, and controlling the duration of cooling or heating of the semiconductor wafer according to the detected information related to the temperature of the semiconductor wafer. In an embodiment of WO2020 / 064470, an infrared (IR) sensor of the device is used to detect the temperature of the wafer. Summary of the invention

[0014] The present inventors have developed methods of detecting wafer temperature (eg, the initial or incoming temperature of a wafer prior to subsequent heating or cooling of the wafer) that do not significantly affect the overall wafer.

[0015] The present inventors have recognized that a temperature sensor of the end effector may be used to detect the temperature of the wafer while the wafer is supported by the end effector.

[0016] Thus, the temperature of the wafer can be detected during the transport of the wafer using the end effector, for example, during the transport of the wafer from the wafer container to the temperature change component or measurement component of the device. Therefore, the yield of the wafer will not be significantly affected by the temperature measurement.

[0017] Thus, the present invention is most generally directed to sensing the temperature of a wafer using a temperature sensor of an end effector supporting the wafer.

[0018] According to a first aspect of the present invention, there is provided an end effector for supporting a wafer, the end effector having a temperature sensor configured to sense a temperature of a wafer supported by the end effector.

[0019] The first aspect of the present invention may have any one of the following optional features, or, where compatible, any combination of the following optional features.

[0020] In the most general case, an end effector may be a support for supporting a wafer, such as while the wafer is being moved or transported.

[0021] For example, an end effector may be referred to as a robot end effector or a robot arm end effector.

[0022] Generally speaking, an end effector is used to support a wafer while the wafer is moved or transferred by the end effector.

[0023] The end effector may be configured or adapted to support a wafer.

[0024] The end effector may be configured or adapted to support the wafer from below the wafer.

[0025] The end effector may include a support surface configured to contact a bottom surface of the wafer so as to support the wafer from below.

[0026] The end effector may include a blade for supporting the wafer from below.

[0027] The end effector may include a body having a flat or substantially flat upper surface. The upper surface of the body is the surface facing the wafer when the wafer is supported by the end effector.

[0028] The end effector may be plate-shaped.

[0029] The end effector may be elongated.

[0030] The body may be plate-shaped.

[0031] The main body may be elongated.

[0032] The end effector may include one or more contact or support elements or components configured to contact the bottom side of the wafer so as to support the wafer from below.

[0033] The end effector may be configured to be attached or mounted on a robotic arm or manipulator.

[0034] The wafer may be a semiconductor wafer, such as a silicon wafer.

[0035] Supporting the wafer may refer to supporting the weight of the wafer, and / or carrying the wafer, and / or securing the wafer.

[0036] The end effector may include a mechanism, means or device for grasping or holding the wafer while supporting the wafer from below, such as a vacuum clamp or vacuum gripper or edge gripper.

[0037] For example, the end effector may include one or more vacuum pads that may be connected to a vacuum / low pressure source and configured to apply vacuum / low pressure to the wafer to secure the wafer.

[0038] Alternatively, the end effector may include one or more movable plungers or components configured to push the edge of the wafer toward corresponding stops, thereby clamping the edge of the wafer.

[0039] The end effector may be a friction type end effector.

[0040] The end effector may prevent or limit lateral movement of the wafer relative to the end effector by friction between the end effector and the wafer.

[0041] The end effector may include one or more pads configured to increase friction between the end effector and the wafer. For example, the one or more pads may include a material having a higher coefficient of friction with the wafer than with the main material of the end effector.

[0042] A temperature sensor is a device that senses, detects, or measures temperature.

[0043] A temperature sensor may be referred to as a temperature detector or a temperature measuring device.

[0044] Temperature sensors sensing temperature generally refers to the output of the temperature sensor varying or changing with temperature.

[0045] The output of a temperature sensor typically depends on or corresponds to temperature.

[0046] The temperature sensor may output an electrical signal that depends on or corresponds to temperature.

[0047] The temperature sensor may be positioned and / or arranged and / or adapted to sense a temperature of a wafer supported by the end effector.

[0048] The temperature sensor may be configured to sense the temperature of the bottom side of the wafer.

[0049] The end effector may include a temperature sensor.

[0050] The temperature sensor may be configured to be in thermal contact with a wafer supported by the end effector.

[0051] The temperature sensor may be configured and / or positioned and / or arranged and / or adapted to be in thermal contact with a wafer supported by the end effector, either directly or indirectly via intermediate parts, components or materials.

[0052] The temperature sensor may comprise a thermocouple.

[0053] The temperature sensor may be located in or within the end effector, or at least partially in or within the end effector.

[0054] The temperature sensor may be embedded or partially embedded in the end effector. The temperature sensor may be at least partially embedded in the end effector.

[0055] The temperature sensor may be embedded or partially embedded in the body of the end effector. The temperature sensor may be at least partially embedded in the body of the end effector. The body may be a main body.

[0056] The temperature sensor may be embedded or partially embedded in the contact component or the supporting component of the end effector.

[0057] The end effector may include a plurality of pads configured to support a wafer, and the temperature sensor may be embedded or partially embedded in one of the pads.

[0058] The pad may be configured to contact the wafer to support the wafer.

[0059] For example, the pad may also be referred to as a wafer contacting member or a wafer supporting member.

[0060] The pad may extend upwardly from the upper surface of the end effector to contact the wafer and support the wafer above the upper surface of the end effector.

[0061] The pad may be disposed in or on an upper surface of the end effector, such as an upper surface of a body of the end effector.

[0062] The pads may be configured to support the wafer from below by contacting the bottom side of the wafer.

[0063] For example, there may be three pads, or three or more pads.

[0064] The other one or more pads (i.e., pads without temperature sensors) may be configured to increase friction between the end effector and the wafer. For example, the other one or more pads may include a material having a higher coefficient of friction with the wafer than with the primary material of the end effector.

[0065] For example, the other one or more liners may comprise a polymer.

[0066] The temperature sensor being embedded or partially embedded in the pad may mean that the temperature sensor is in or within the pad, or at least partially in or within the pad.

[0067] The temperature sensor may be at least partially placed in a hole, opening, void, bore, or channel in the end effector, such as in the body of the end effector.

[0068] The end effector may include a body having a through hole, and the temperature sensor may be located or partially located in the through hole.

[0069] The through hole extends from the lower side of the body to the upper side of the body.

[0070] Herein, the upper side of the body refers to a side of the body for supporting a wafer and / or a side facing the wafer when the wafer is supported by the end effector, and the lower side of the body refers to the opposite side of the body.

[0071] The end effector may include a tubular member positioned within the through hole.

[0072] For example, the tubular member may cover or substantially cover the inner circumferential surface of the through hole.

[0073] The outer surface of the tubular member may be in contact with the inner circumferential surface of the through hole, such as in direct contact.

[0074] The tubular member may surround or partially surround the temperature sensor located or partially located in the through hole.

[0075] The tubular member has a central hole, or bore, or passageway, in which the temperature sensor is located or partially located.

[0076] The tubular member may comprise a material having a lower thermal conductivity than the material of the body of the end effector.

[0077] For example, the material of the body of the end effector may be aluminum, stainless steel, or ceramic.

[0078] The material with low thermal conductivity may include polyoxymethylene.

[0079] However, other materials may be used instead of polyoxymethylene, such as polyetheretherketone or polyethylene terephthalate.

[0080] The end effector may include a cap or cover plate on the upper side of the tubular member.

[0081] Thus, the cap or cover plate covers the upper end of the through hole.

[0082] At least one upper surface of the cap or cover plate may be higher than a surrounding upper surface of the body of the end effector.

[0083] Thus, the cap or cover plate may protrude or extend upwardly above the upper surface of the body of the end effector.

[0084] This may be accomplished, for example, by extending the tubular member upwardly above the peripheral upper surface of the body of the end effector.

[0085] Thus, when the wafer is supported by the end effector, the top surface of the cap or cover plate can be in direct contact with the wafer. The top surface of the cap or cover plate can support or partially support the wafer. Thus, the top surface of the cap or cover plate can be configured to contact and support the wafer received by the end effector.

[0086] The cap or cover plate may comprise a material having a higher thermal conductivity than the material of the tubular member.

[0087] The material with high thermal conductivity may include aluminum.

[0088] The temperature sensor may be mounted on the underside of the cap or cover plate.

[0089] The bottom side of the cap or cover plate refers to the side facing the through hole in the body of the end effector.

[0090] Therefore, when the wafer is supported by the end effector, the wafer may be in contact with the cap or the cover plate, and good thermal contact may be achieved between the temperature sensor and the wafer via the cap or the cover plate.

[0091] The temperature sensor may be attached to the underside of the cap or cover plate using a thermally conductive adhesive, such as thermal epoxy.

[0092] The end effector may include a controller configured to receive the output of the temperature sensor.

[0093] The controller may be a microcontroller.

[0094] The controller may be electrically connected to the temperature sensor, for example, via one or more wires.

[0095] The controller may be configured to calculate the temperature based on the output of the temperature sensor.

[0096] The controller may be configured to calculate the temperature using a calibration algorithm.

[0097] Alternatively, the end effector may be configured to output the output of the temperature sensor to a device or apparatus connected to the end effector, such as a robotic arm, and the temperature may be measured or calculated elsewhere based on the output of the temperature sensor. Thus, the end effector may include one or more wires or connectors for communicating the output of the temperature sensor to the device or apparatus connected to the end effector. In this case, a controller may not be required and may not exist.

[0098] The temperature sensor may be configured to continuously sense the temperature of the wafer and provide an output to the controller.

[0099] Alternatively, the controller may control the temperature sensor to take measurements at specific points in time.

[0100] According to a second aspect of the present invention, there is provided a robot arm having the end effector according to the first aspect of the present invention.

[0101] The end effector of the second aspect of the present invention may have any one of the features of the end effector of the first aspect of the present invention described above or below, or, if compatible, any combination of these features.

[0102] The robotic arm may be part of the robot and / or connected to the robot.

[0103] The robotic arm may be configured to move the end effector.

[0104] The robot arm may be configured to move or transfer the wafer using an end effector.

[0105] According to a third aspect of the present invention, there is provided an apparatus comprising: a cooling or heating member for cooling or heating the wafer; and According to the end effector of the first aspect of the present invention, the apparatus is configured to transfer the wafer to the cooling or heating component using the end effector.

[0106] The end effector of the third aspect of the present invention may have any one of the features of the end effector of the first aspect of the present invention described above or below, or, if compatible, any combination of these features.

[0107] The device according to the third aspect of the present invention may have any one of the following optional features, or, where compatible, any combination of the following optional features.

[0108] The cooling or heating portion may be a cooling or heating device.

[0109] The cooling or heating component may be a passive cooling or heating component, such as a passive heat conducting plate.

[0110] In this context, "passive" means that the cooling or heating component is neither cooled nor heated by the cooling / heating element, but only receives its temperature from the surrounding environment.

[0111] Passive thermally conductive plates are typically plates or blocks of material with high thermal mass and / or high thermal conductivity.

[0112] For example, the passive thermally conductive plate may be a metal plate or block, such as aluminum.

[0113] Alternatively, the cooling or heating component may be an active cooling or heating component, such as an actively thermally conductive plate.

[0114] In this context, "active" means that the cooling or heating device heats or cools by powering the heating or cooling device.

[0115] The active thermally conductive plate may include a plate or block of material having high thermal mass and / or high thermal conductivity that is heated or cooled by one or more power cooling or heating devices. For example, the plate or block of material may be a metal plate or block of metal, such as aluminum, that is heated or cooled using one or more Peltier devices.

[0116] The device may also include a robot or robotic arm having an end effector.

[0117] The apparatus may be configured to transfer wafers from a wafer container, such as a FOUP, to a cooling or heating component using an end effector.

[0118] The device can also be configured to use the end effector to subsequently pick up the wafer from the cooling or heating component. Alternatively, a different end effector can also be used to pick up the wafer from the cooling or heating component.

[0119] The apparatus may further include a controller configured to control a duration for which the cooling or heating member cools or heats the wafer according to an output of the temperature sensor when the wafer is transferred using the end effector.

[0120] For example, based on the output of the temperature sensor obtained when the end effector is used to transfer the wafer, the controller can control the duration for which the cooling or heating component subsequently cools or heats the wafer so that when cooling the wafer, the cooling time of the hotter wafer is longer than the cooling time of the colder wafer, or when heating the wafer, the heating time of the colder wafer is longer than the heating time of the hotter wafer.

[0121] The controller may be configured to control the duration of cooling or heating of the wafer to be zero when the temperature sensed by the temperature sensor is equal to a predetermined temperature or is within a predetermined range of the predetermined temperature.

[0122] If the temperature difference between the temperature sensed by the temperature sensor and the predetermined temperature is less than ±2K, or ±1K, or ±0.5K, or ±0.1K, the controller may be configured to skip an available cooling or heating step.

[0123] The temperature sensor of the end effector can be used to detect the initial temperature or incoming temperature of the wafer, for example, if the semiconductor wafer is cooled or heated, the temperature of the semiconductor wafer is detected immediately before or immediately before the semiconductor wafer starts to cool or heat. For example, if the semiconductor wafer is cooled or heated, the temperature of the semiconductor wafer can be measured less than 1 minute, less than 30 seconds, or less than 10 seconds before the semiconductor wafer starts to cool or heat.

[0124] If the semiconductor wafer is to be cooled or heated, the temperature of the semiconductor wafer can be measured less than three seconds before the semiconductor wafer starts to cool or heat, for example less than three seconds before the semiconductor wafer is placed on a heat conducting plate. Then, if the semiconductor wafer is to be cooled or heated, the measured temperature will exactly correspond to the temperature at which the semiconductor wafer will start to cool or heat.

[0125] The apparatus is configured to transfer the wafer to the cooling or heating component using the end effector. For example, the apparatus may be configured to control the end effector to pick up a wafer located in a wafer container (such as a FOUP). The apparatus may then be configured to control the end effector to transfer the wafer from the wafer container to the cooling or heating component and load the wafer onto the cooling or heating component (unless cooling or heating is to be skipped). The apparatus may further be configured to control the end effector to sense the temperature of the wafer using a temperature sensor when the end effector transfers the wafer from the wafer container to the cooling or heating component. As described above, the output of the temperature sensor may then be used to control the duration of subsequent cooling or heating of the wafer by the cooling or heating component.

[0126] The device may be a wafer quality metrology device, which further comprises a measurement region.

[0127] The measuring area may contain weighing equipment.

[0128] The measuring area may further comprise a weighing chamber, which encloses the weighing device.

[0129] The weighing device may include a weighing plate on which the wafer is loaded.

[0130] The apparatus may be configured to calculate the mass of the wafer based at least on the measured output of the weighing device.

[0131] According to a fourth aspect of the present invention, there is provided a method comprising: supporting the wafer using an end effector; and The temperature of the wafer is sensed using the temperature sensor of the end effector.

[0132] The fourth aspect of the present invention may include any one of the features of the first to third aspects of the present invention described above or below, or, if compatible, include any combination of the features of the first to third aspects.

[0133] The fourth aspect of the present invention may include any one of the following optional features, or, where compatible, any combination of the following optional features.

[0134] The method may further include controlling the duration of cooling or heating the wafer based on the output of the temperature sensor. In particular, the method may include using the output of the temperature sensor obtained while the end effector supports the wafer to control the duration of subsequent cooling or heating of the wafer.

[0135] The method may include controlling a duration of cooling or heating the wafer to be zero when the temperature sensed by the temperature sensor is equal to a predetermined temperature or is within a predetermined range of the predetermined temperature.

[0136] If the temperature difference between the temperature sensed by the temperature sensor and the predetermined temperature is less than ±2K, or ±1K, or ±0.5K, or ±0.1K, the method may include skipping an applicable cooling or heating step.

[0137] The method may be a wafer quality metrology method, and the method may further include subsequently loading the wafer onto a measurement area of ​​a wafer quality metrology device.

[0138] The present invention encompasses any combination of aspects and preferred features described, unless such a combination is expressly impermissible or explicitly avoided. BRIEF DESCRIPTION OF THE DRAWINGS

[0139] Embodiments of the present invention will now be discussed, by way of example only, with reference to the accompanying drawings, in which:

[0140] Figure 1 is a schematic top view of an end effector according to a first embodiment of the present invention;

[0141] Figure 2 is a schematic top view of an end effector according to a first embodiment of the present invention, the end effector supporting a wafer;

[0142] Figure 3 is a schematic side view of an end effector according to a first embodiment of the present invention;

[0143] Figure 4 is a schematic side view of an end effector according to a first embodiment of the present invention, the end effector supporting a wafer;

[0144] Figure 5 is a partial cross-sectional schematic diagram of an end effector according to a first embodiment of the present invention;

[0145] Figure 6 is a schematic top view of a robot arm according to a second embodiment of the present invention;

[0146] Figure 7 is a schematic diagram of a semiconductor wafer quality measurement device according to a third embodiment of the present invention;

[0147] Figure 8 is a schematic diagram of a semiconductor wafer quality metrology apparatus according to a fourth embodiment of the present invention; and

[0148] Fig. 9 FIG. 5 is a schematic diagram of a semiconductor wafer quality metrology apparatus according to a fifth embodiment of the present invention. DETAILED DESCRIPTION

[0149] Various aspects and embodiments of the present invention will now be discussed with reference to the accompanying drawings. Further aspects and embodiments will be apparent to those skilled in the art. All documents mentioned herein are incorporated herein by reference.

[0150] The end effector 1 according to the first embodiment of the present invention will refer to Figures 1 to 5 Give a description.

[0151] Figure 1 is a schematic top view of the end effector 1, Figure 2 is a schematic top view of an end effector 1 having a wafer 3 supported by the end effector 1, Figure 3 is a schematic side view of the end effector 1, Figure 4 is a schematic side view of an end effector 1 having a wafer 3 supported by the end effector 1, and Figure 5 It is a schematic partial cross-sectional view of the end effector 1 .

[0152] like Figures 1 to 4As shown, the end effector 1 is configured to support the wafer 3 from below the wafer 3. In particular, the end effector 1 is configured to contact the bottom surface of the wafer 3 to support the wafer 3 from below the wafer 3.

[0153] The body 4 of the end effector 1 has a flat or substantially flat upper surface. The upper surface of the body 4 is the surface of the body 4 facing the wafer 3 when the wafer is supported by the end effector 1.

[0154] The main body 4 is in an elongated shape, and the thickness of the main body 4 perpendicular to the upper surface is significantly smaller than the length or width of the main body 4 .

[0155] For example, the main body 4 may be plate-shaped.

[0156] For example, the body 4 may be referred to as a blade.

[0157] The end effector 1 includes three pads 5a and 5b, which are configured to contact the bottom surface of the wafer 3 to support the wafer 3 from below. For example, the pads 5a and 5b may be referred to as wafer contact pads or wafer support pads.

[0158] Three pads 5 a are provided in or on the upper surface of the main body 4 of the end effector 1 .

[0159] The three pads 5 a and 5 b protrude or extend upward from the upper surface of the body 4 so as to contact the bottom surface of the wafer 3 and support the wafer 3 on the upper surface of the body 4 .

[0160] Each of the three pads 5 a and 5 b protrudes or extends above the upper surface of the body 4 by the same amount so as to support the wafer 3 in parallel with the upper surface of the body 4 .

[0161] For example, Figure 1 As shown, the distal end of the body 4 has a fork or fork finger shape comprising two fork or fork fingers 7 .

[0162] The distal end of the body 4 is connected to or integrated into a stem 9 of the body 4. In this embodiment, the stem 9 is rectangular.

[0163] For example, Figure 1 As shown, the body 4 of the end effector 1 thus comprises a shaft 9 and two fork tips or fingers 7 located at the distal end of the shaft 9 .

[0164] A respective one of the pads 5a is positioned in or on the upper surface of each of the two prongs or fingers 7. A third pad 5b is located in or on the upper surface of the shaft 9.

[0165] As described below, the configuration of pad 5b is different from that of pad 5a. The configuration of pad 5a may be the same or different.

[0166] The pad 5 a may be configured to increase friction between the end effector 1 and the wafer 3 so as to limit or prevent lateral movement of the wafer 3 relative to the end effector 1 when the wafer 3 is carried by the end effector 1 .

[0167] For example, the pad 5a may include or be made of a material having a higher coefficient of friction with the wafer 3 than with the main material of the end effector 1. For example, the main material of the end effector 1 may be aluminum, stainless steel or ceramic.

[0168] Therefore, the end effector 1 can be regarded as a friction type end effector.

[0169] The liner 5a may be made of or comprise one or more polymers.

[0170] Of course, in other embodiments, a different number of pads may be provided, and / or the pads may be located in different positions. Generally speaking, the end effector 1 will include three or more pads.

[0171] Furthermore, in other embodiments, the pads 5 a and 5 b may be omitted so that the wafer 3 is directly supported by the upper surface of the body 4 of the end effector 1 .

[0172] In addition, in other embodiments, the end effector 1 may have Figures 1 to 4 For example, in other embodiments, the number of prongs or fingers 7 may be different, or no prongs or fingers 7 may be provided.

[0173] Figure 5 is a partial cross-sectional schematic diagram of the end effector 1. In particular, Figure 5 It is a partial cross-sectional view through the pad 5 b of the end effector 1 .

[0174] like Figure 5 As shown, the end effector 1 includes a through hole 11 penetrating the body 4 of the end effector 1. In particular, the through hole 11 extends from the lower surface of the body 4 to the upper surface of the body 4.

[0175] The tubular member 15 is located in the through hole, and the outer surface of the tubular member 15 contacts the inner surface of the through hole 11. The tubular member 15 comprises a low thermal conductivity material, such as polyoxymethylene (or is made of a low thermal conductivity material). Therefore, the inner surface of the through hole 11 is covered with the low thermal conductivity material.

[0176] The low thermal conductivity material refers to a material having a lower thermal conductivity than the material of the body 4 of the end effector 1. For example, the material of the body 4 may be aluminum, stainless steel or ceramic.

[0177] For example, the tubular member 15 may be in the form of a tube, annulus, ring, or sleeve.

[0178] like Figure 5 As shown, the tubular member 15 extends along the entire length of the through hole 11 .

[0179] The cap or cover plate 17 is provided on the upper side of the tubular member 15. Thus, the cap or cover plate 17 covers the upper surface of the through hole 11.

[0180] The cap or cover plate 17 comprises (or is made of) a material with high thermal conductivity, such as aluminum. The cap or cover plate 17 is attached or connected to the top of the tubular member 15 .

[0181] The high thermal conductivity material refers to a material having a higher thermal conductivity than the material of the tubular member 15 .

[0182] At least one upper surface of the cover cap or cover plate 17 is higher than the surrounding upper surface of the main body 4 of the end effector 1 .

[0183] For example, this can be achieved by extending the tubular member 15 upwardly over the surrounding upper surface of the body 4 of the end effector 1, as shown in FIG. Figure 5 shown.

[0184] The tubular member 15 surrounds an opening 18 extending from the lower surface of the body 4 of the end effector 1 to the bottom surface of the cap or cover plate 17. The opening 18 is a portion of the through hole 11.

[0185] The thermocouple 19 is inserted into the opening 18 from the lower side of the body 4 of the end effector 1 so that the thermocouple is at least partially located in the opening 18. Therefore, the thermocouple 19 is also at least partially located in the through hole 11.

[0186] Thermocouple 19 is attached to the bottom of cap or cover plate 17 using a thermal adhesive such as thermal epoxy.

[0187] When the wafer 3 is supported by the end effector 1, the wafer 3 is supported by the pads 5a and 5b, and the thermocouple 19 is in thermal contact with the wafer 3 via the cap or cover plate 17. Since the cap or cover plate 17 is made of a high thermal conductive material, the wafer 3 and the thermocouple 19 have good thermal contact via the cap or cover plate 17.

[0188] In particular, the cap or cover plate 17 is configured to contact and support the wafer 3 when the wafer 3 is received and supported by the end effector 1 .

[0189] Therefore, the thermocouple 19 is configured to sense the temperature of the wafer 3 supported by the end effector 1 .

[0190] The gasket 5 b may be considered to correspond to the cover cap or cover plate 17 .

[0191] Alternatively, the gasket 5 b may be considered to correspond to the cap or cover plate 17 as well as the tubular member 15 .

[0192] Alternatively, the gasket 5 b may be considered to correspond to the cap or cover plate 17 , the tubular member 15 , and the thermocouple 19 .

[0193] The gasket 5 b may be inserted into the through hole 11 from the bottom of the body 4 of the end effector 1 .

[0194] The gasket 5 b may be located at least partially inside the through hole 11 .

[0195] like Figure 5 As shown, the inner circumferential surface of the through hole 11 includes a step, and when moving from the lower surface to the upper surface of the main body 4, the diameter of the through hole 11 decreases at the step.

[0196] The outer surface of the tubular member 15 has corresponding or complementary steps, and the diameter of the outer surface of the tubular member 15 decreases at the steps when moving from the lower surface to the upper surface of the body 4. When the tubular member 15 is inserted into the through hole 11, the steps of the tubular member 15 are configured to contact and abut against the steps of the inner circumferential surface of the through hole 11 to limit the extent to which the gasket 5b can be inserted into the through hole 11.

[0197] Thermocouple 19 may be located, for example, within support pad 5b, or embedded within support pad 5b, or within support pad 5b.

[0198] like Figures 1 to 3 As shown, the end effector 1 includes a microcontroller 21, which is configured to receive the output of the thermocouple 19. In particular, the microcontroller 21 is electrically connected to the thermocouple 19, for example, via one or more wires.

[0199] The microcontroller 21 is configured to calculate and / or measure the temperature of the wafer 3 based on the output of the thermocouple 19 .

[0200] The microcontroller 21 may be configured to calculate and / or measure the temperature of the wafer 3 using a predetermined calibration algorithm.

[0201] For example, a predetermined calibration algorithm may be determined by measuring the output of the thermocouple 19 for different known temperatures sensed by the thermocouple, thereby determining the relationship between the output of the thermocouple 19 and the sensed temperature.

[0202] The known temperature may be determined using an alternative temperature sensor, or by controlling the temperature to a predetermined temperature using a heating or cooling device.

[0203] The predetermined calibration algorithm may be stored in the memory of the microcontroller.

[0204] Of course, in other embodiments, there may be more than one pad with a temperature sensor. Additionally, or as an alternative, one or two pads 5a may have a temperature sensor.

[0205] Figure 6 A robot arm 23 according to a second embodiment of the invention is shown. The robot arm 23 has an end effector 1 according to the first embodiment of the invention.

[0206] The end effector 1 may be regarded as a part of the robot arm 23 , or the combination of the robot arm 23 and the end effector 1 may constitute a robot.

[0207] The end effector 1 is attached, connected or mounted on the robot arm 23. The attachment, connection or mounting may be fixed, so that the orientation of the end effector 1 is fixed relative to the robot arm 23, or may be rotational or pivotal, so that the end effector 1 can rotate or pivot relative to the robot arm 23.

[0208] In this embodiment, the robot arm 23 includes two arms 23a and 23b connected together at respective ends by a rotating or pivot connection so that the arm 23b can rotate relative to the arm 23a.

[0209] The end effector 1 is attached, connected or installed at the distal end of the arm 23b.

[0210] The first arm portion 23a may be rotatably or pivotally mounted at its proximal end so that the entire robot arm 23 is rotatable or pivotable.

[0211] certainly, Figure 6 The robot arm 23 in FIG. 2 is only one example of a robot arm according to the second embodiment of the present invention, and various different types of robot arms may be used in the present invention.

[0212] The robot arm 23 may include a microcontroller or a processor for receiving the output of the microcontroller 21 of the end effector 1 .

[0213] Alternatively or additionally, the robot arm 23 may include one or more wires or connecting lines for transmitting the output of the microcontroller 21 of the end effector 1 to other devices or apparatuses connected to the robot arm 23 or in communication with the robot arm 23 .

[0214] A serial connection or communication may be made between the robot arm 23 and the microcontroller 21 of the end effector 1 .

[0215] As discussed below, in an embodiment of the present invention, the temperature of the chip 3 calculated or measured by the microcontroller 21 based on the output of the thermocouple 9 (for example, before the chip is loaded into the measurement area of ​​the measuring device) is used to control the duration of cooling or heating of the chip 3.

[0216] Alternatively, the output of the thermocouple 9 may be transmitted to the outside of the end effector 1 , for example to the robot arm 23 or a controller in the device, and the temperature of the wafer may be calculated there instead of by the microcontroller 21 of the end effector 1 .

[0217] Figure 7 A semiconductor wafer quality metrology apparatus 25 according to a third embodiment of the present invention is shown.

[0218] In a third embodiment of the present invention, the end effector 1 of the first embodiment of the present invention is used to transfer a semiconductor wafer, as described below.

[0219] The third embodiment of the present invention may include the robot arm 23 for transferring semiconductor wafers of the second embodiment of the present invention, as described below, or another robot arm.

[0220] The semiconductor wafer quality metrology device 25 includes a weighing scale 27 having a weighing pan 29 for receiving the semiconductor wafer. The weighing scale 27 is configured to provide a measurement output indicative of the weight of the semiconductor wafer loaded on the weighing pan 29.

[0221] The weighing scale 27 is located in a weighing chamber 31 , which forms a closed environment around the weighing scale 27 , for example to maintain a substantially uniform air density and / or air pressure and / or air temperature around the weighing scale 27 .

[0222] The weighing chamber 31 has an opening, such as a slot of suitable size on the side wall of the weighing chamber 31, so that the semiconductor wafer can be transferred into the weighing chamber 31 and placed on the weighing pan 29. When not in use, the opening can be covered by an openable door or cover plate to make the weighing chamber 31 substantially closed or sealed when measuring using the weighing scale 27. The semiconductor wafer can be transferred into the weighing chamber 31 and placed on the weighing pan 29 using a robot arm having an end effector for supporting the semiconductor wafer. The end effector can be the end effector 1 in the first embodiment of the present invention.

[0223] The passive heat conductive plate 33 is located on the top of the weighing chamber 31. The passive heat conductive plate 33 comprises a material having good thermal conductivity (eg, aluminum).

[0224] The passive thermally conductive plate 33 is located directly on top of the weighing chamber 31, so there is good thermal contact between the passive thermally conductive plate 33 and the weighing chamber 31. The passive thermally conductive plate 33 is in direct physical contact with the weighing chamber 31. The passive thermally conductive plate 33 can be attached or fixed to the weighing chamber 31, for example, using one or more bolts (not shown) and / or a thermally conductive bonding layer (not shown).

[0225] Due to the good thermal contact between the passive heat conductive plate 33 and the weighing chamber 31 , the passive heat conductive plate 33 may be substantially in thermal equilibrium with the weighing chamber 31 , and thus may have substantially the same temperature as the weighing chamber 31 .

[0226] Therefore, when the semiconductor wafer is placed on the passive heat conductive plate 33 , the temperature of the semiconductor wafer may be equal to or substantially equal to the temperature of the weighing chamber 31 , depending on the placement time of the semiconductor wafer on the passive heat conductive plate 33 .

[0227] The passive thermally conductive plate 33 may include an intermediate mechanism, such as a plurality of actuator pins, for receiving the semiconductor wafer from the end effector 1 and lowering the semiconductor wafer onto the surface of the passive thermally conductive plate 33 .

[0228] The semiconductor wafer quality metrology device 25 further includes an active heat conduction plate 35 and a controller 37 .

[0229] A plurality of Peltier devices 39 are attached to the bottom side of the active thermally conductive plate 35. Each Peltier device 39 has a heat sink 41 attached to its bottom side. An airflow 43 may be provided in an area 45 below the bottom side of the thermally conductive plate 35 to remove heat from the Peltier devices 39 and the heat sink 41.

[0230] When the semiconductor wafer is placed on the active thermally conductive plate 35, heat is conducted from the semiconductor wafer to the active thermally conductive plate 35. The Peltier device 39 can actively dissipate the heat load removed from the semiconductor wafer by actively removing heat from the active thermally conductive plate 35.

[0231] The active thermally conductive plate 35 may include an intermediate mechanism, such as a plurality of actuator pins, for receiving the semiconductor wafer from the end effector 1 and lowering the semiconductor wafer onto the surface of the active thermally conductive plate 35 .

[0232] The semiconductor wafer quality metrology apparatus 25 is configured to take out a semiconductor wafer from a wafer container such as a FOUP using the end effector 1 of the first embodiment of the present invention and transfer the semiconductor wafer to the active heat transfer plate 35 .

[0233] For example, the apparatus 25 may include a robot and / or a robotic arm having the end effector 1 and configured to transfer a semiconductor wafer using the end effector 1 .

[0234] When the semiconductor wafer is transferred to the active heat transfer plate 35, the temperature of the semiconductor wafer is sensed using the thermocouple 19 in the end effector 1, and the temperature of the semiconductor wafer is calculated by the microcontroller 21 of the end effector 1. For example, when the semiconductor wafer is taken out of the wafer container, its temperature may be about 70° C. because the previous processing step is performed on the semiconductor wafer before it is loaded into the wafer container.

[0235] The temperature of the semiconductor wafer calculated by the microcontroller 21 is transmitted to the controller 37 of the device 25 via a robot arm or the like.

[0236] The controller 37 is configured to control a subsequent duration of the active heat transfer plate 35 cooling the semiconductor wafer according to the temperature of the semiconductor wafer calculated by the microcontroller 21 .

[0237] In particular, the controller 37 is configured to control the duration of cooling the colder semiconductor wafer to be shorter than the duration of cooling the hotter semiconductor wafer. When the temperature of the semiconductor wafer is equal to or within a predetermined range of a desired temperature (e.g., the temperature of the weighing chamber 31), it may be determined not to cool the semiconductor wafer using the active heat conducting plate 35. In other words, the duration of cooling the semiconductor wafer by the active heat conducting plate 35 may be controlled to be zero.

[0238] In this embodiment, the controller 37 is configured to classify each incoming semiconductor wafer as "cold" or "hot" according to the temperature of the semiconductor wafer calculated by the microcontroller 21, and control the cooling duration of the semiconductor wafer by the active heat transfer plate 35 according to this classification.

[0239] For example, the temperature of the semiconductor wafer calculated by the microcontroller 21 may be compared with a predetermined threshold to determine whether the temperature is greater than (or greater than or equal to) the predetermined threshold. When the temperature is greater than (or greater than or equal to) the predetermined threshold, the semiconductor wafer may be classified as "hot"; when the temperature is not greater than (or greater than or equal to) the predetermined threshold, the semiconductor wafer may be classified as "cold".

[0240] Semiconductor wafers classified as "hot" may be cooled within a first duration, while semiconductor wafers classified as "cold" may be cooled within a shorter second duration, which may be zero, for example (in other words, "cold" wafers may not be cooled by the active thermal plate 35).

[0241] In this embodiment, the duration of the active heat conduction plate 35 cooling the semiconductor wafer is controlled by controlling the time when the semiconductor wafer is loaded onto the active heat conduction plate 35. Therefore, the controller 37 can control the time when the semiconductor wafer is loaded onto the active heat conduction plate 35 and the time when the semiconductor wafer is unloaded from the active heat conduction plate 35, thereby appropriately controlling the cooling time of the semiconductor wafer by the active heat conduction plate 35. As described above, the time when the semiconductor wafer is loaded onto the active heat conduction plate 35 can be controlled to be zero.

[0242] In other embodiments, the controller 37 may alternatively or additionally control the amount of active cooling of the active thermally conductive plate 35. For example, the controller 37 may control the power provided to the Peltier device 39 in order to vary the cooling rate provided by the Peltier device 39.

[0243] In other embodiments, the cooling of the semiconductor wafer may be controlled exclusively based on the temperature of the semiconductor wafer calculated by the microcontroller 21, for example using a relationship that relates the temperature of the semiconductor wafer calculated by the microcontroller 21 to an appropriate duration of semiconductor wafer cooling. Such a relationship may be predetermined by appropriate experimentation.

[0244] After the semiconductor wafer is cooled by the active heat conduction plate 35 or skips the active heat conduction plate 35 , the semiconductor wafer is transferred to the passive heat conduction plate 33 and loaded onto the passive heat conduction plate 33 .

[0245] According to the first embodiment of the present invention, the semiconductor wafer can be transferred from the active thermally conductive plate 35 to the passive thermally conductive plate 35 using the end effector 1. The end effector can be the same end effector used to transfer the semiconductor wafer to the active thermally conductive plate 35, or a different end effector. Alternatively, a different type of end effector can be used to transfer the semiconductor wafer to the passive thermally conductive plate 33.

[0246] As described above, when the semiconductor wafer is placed on the passive heat conductive plate 33 , the temperature of the semiconductor wafer may be equal to or substantially equal to the temperature of the weighing chamber 31 , depending on how long the semiconductor wafer is loaded on the passive heat conductive plate 33 .

[0247] Subsequently, the semiconductor wafer is removed from the passive heat conducting plate 33 , and transferred to the measuring chamber 31 and loaded onto a weighing pan so that the weight of the semiconductor wafer is measured using a weighing scale 27 .

[0248] The device 25 is configured to calculate the mass of the semiconductor wafer based on at least the output of the weigh scale 27. The controller 37 may be configured to calculate the mass of the semiconductor wafer based on at least the output of the weigh scale 27.

[0249] In the above embodiment, or in another embodiment, the end effector 1 according to the first embodiment of the present invention can be used to detect the temperature of the semiconductor wafer when transferring the semiconductor wafer to the passive heat conduction plate 33. Therefore, the controller 37 can control the cooling duration of the semiconductor wafer by the passive heat conduction plate 33 according to the temperature of the semiconductor wafer calculated by the microcontroller 21 when the end effector 1 transfers the semiconductor wafer to the passive heat conduction plate 33.

[0250] Figure 8 A semiconductor wafer quality metrology device 47 according to a fourth embodiment is shown. The semiconductor wafer quality metrology device according to the fourth embodiment differs from the third embodiment in that the passive heat conduction plate 33 in the third embodiment is omitted. Other features of this embodiment may be the same as those of the third embodiment discussed above, and therefore these features will not be described in detail.

[0251] In the fourth embodiment, the semiconductor wafer may be directly transferred from the active thermally conductive plate 35 to the weighing chamber 31 .

[0252] In this embodiment, the active thermally conductive plate 35 is preferably controlled so that the temperature of the semiconductor wafer substantially matches the temperature of the weighing chamber 31 .

[0253] Fig. 9 A semiconductor wafer quality metrology device 49 according to a fifth embodiment is shown. The semiconductor wafer quality metrology device according to the fifth embodiment differs from the third embodiment in that the active heat conduction plate 35 is omitted.

[0254] Therefore, in the fifth embodiment, the thermocouple 19 is used to detect the temperature of the semiconductor wafer before it is transferred to the passive heat conducting plate 33 by the end effector 1 .

[0255] Then, the controller 37 controls the cooling duration of the semiconductor wafer via the passive heat conducting plate 33 in a manner similar to the third embodiment discussed above, such as controlling the time when the semiconductor wafer is loaded onto the passive heat conducting plate 33 .

[0256] The above embodiments relate to cooling semiconductor wafers. However, in other embodiments, active and / or passive thermally conductive plates may also be used to heat semiconductor wafers.

[0257] The active and / or passive heat conducting plates in the above embodiments may be replaced by other types of cooling or heating devices.

[0258] The disclosed features in the above description, or in the following claims, or in the accompanying drawings, represented in their specific form or as a means of performing the disclosed function, or as a method or process for obtaining the disclosed results, may be used alone or in any combination of these features to implement the invention in its various forms.

[0259] Although the present invention has been described in conjunction with the exemplary embodiments described above, it will be apparent to those skilled in the art that many equivalent modifications and variations will be apparent after obtaining the present disclosure. Therefore, the exemplary embodiments of the present invention described above are considered to be illustrative rather than restrictive. Various changes may be made to the described embodiments without departing from the spirit and scope of the present invention.

[0260] In order to avoid any doubt, any theoretical explanations provided herein are intended to enhance the reader's understanding. The inventors do not wish to be bound by any of these theoretical explanations.

[0261] Any section headings used herein are for organizational purposes only and are not to be construed as limiting the subject matter described.

[0262] In this specification, including the following claims, unless the context requires otherwise, the words "comprise" and "include", and variations such as "comprises", "comprising" and "including", will be understood to imply the inclusion of stated integers or steps or groups of integers or steps but not the exclusion of any other integers or steps or groups of integers or steps.

[0263] It should be noted that the singular forms "a", "an", and "the" used in this specification and the appended claims include plural referents unless the context clearly dictates otherwise. Ranges herein may be expressed as from "about" one particular value, and / or to "about" another particular value. When such a range is expressed, another embodiment includes from the one particular value and / or to the other particular value. Similarly, when a value is expressed as an approximation by using the preposition "about", it is understood that the particular value constitutes another embodiment. The term "about" in relation to a numerical value is optional, and, for example, means ±10%.

Claims

1. An end effector for supporting a wafer, the end effector having a temperature sensor configured to sense a temperature of a wafer supported by the end effector. 2 . The end effector of claim 1 , wherein the temperature sensor is configured to be in thermal contact with the wafer supported by the end effector.

3. The end effector of any one of the preceding claims, wherein the temperature sensor comprises a thermocouple.

4. The end effector according to any one of the preceding claims, wherein the temperature sensor is embedded or partially embedded in the end effector.

5. The end effector of any of the preceding claims, wherein the end effector comprises a plurality of pads configured to support the wafer, and wherein the temperature sensor is embedded or partially embedded in one of the pads.

6. The end effector of any one of the preceding claims, wherein the end effector comprises a body having a through hole, and wherein the temperature sensor is located or partially located in the through hole. 7 . The end effector of claim 6 , wherein the end effector comprises a tubular member, the tubular member being located in the through hole.

8. The end effector of claim 7, wherein the tubular member comprises a material having a lower thermal conductivity than a material of the body of the end effector.

9. The end effector of claim 8, wherein the material having the lower thermal conductivity comprises polyoxymethylene.

10. The end effector of any one of claims 7 to 9, wherein the end effector comprises a cap or cover plate on the upper side of the tubular member.

11. The end effector according to claim 10, wherein: The cap or cover plate comprises a material having a higher thermal conductivity than the material of the tubular member.

12. The end effector of claim 11, wherein the material having the higher thermal conductivity comprises aluminum.

13. The end effector of any one of claims 10 to 12, wherein the temperature sensor is attached to the bottom side of the cap or cover plate.

14. The end effector of claim 13, wherein the temperature sensor is attached to the bottom side of the cap or cover plate using a thermally conductive adhesive, such as thermal epoxy.

15. The end effector of any one of the preceding claims, wherein the end effector comprises a controller configured to receive the output of the temperature sensor. 16 . The end effector of claim 15 , wherein the controller is configured to calculate a temperature based on the output of the temperature sensor.

17. The end effector of claim 16, wherein the controller is configured to calculate the temperature using a calibration algorithm.

18. A robot arm having the end effector according to any one of the preceding claims.

19. An apparatus comprising: a cooling or heating member for cooling or heating the wafer; and The end effector according to any one of the preceding claims, wherein the apparatus is configured to use the end effector to transfer the wafer to the cooling or heating component.

20. The device of claim 19, wherein the device further comprises a robotic arm having the end effector.

21. The apparatus according to claim 19 or 20, wherein the apparatus further comprises a controller configured to control a duration for which the cooling or heating component cools or heats the wafer according to an output of the temperature sensor.

22. The apparatus according to claim 21, wherein the controller is configured to control a duration of cooling or heating the wafer to be zero when the temperature sensed by the temperature sensor is equal to a predetermined temperature or is within a predetermined range of the predetermined temperature.

23. An apparatus according to claim 21 or 22, wherein if the temperature difference between the temperature sensed by the temperature sensor and the predetermined temperature is less than ±2K, or ±1K, or ±0.5K, or ±0.1K, the controller is configured to skip an available cooling or heating step.

24. The device of any one of claims 19 to 23, wherein the device is a wafer quality metrology device, the wafer quality metrology device further comprising a measurement area.

25. A method comprising: supporting the wafer using an end effector; and The temperature of the wafer is sensed using a temperature sensor of the end effector.

26. The method of claim 25, further comprising controlling a duration of cooling or heating the wafer based on an output of the temperature sensor.

27. The method of claim 26, wherein the method comprises controlling a duration of cooling or heating performed on the wafer to be zero when the temperature sensed by the temperature sensor is equal to a predetermined temperature or is within a predetermined range of the predetermined temperature.

28. The method according to any one of claims 25 to 27, wherein if the temperature difference between the temperature sensed by the temperature sensor and the predetermined temperature is less than ±2K, or ±1K, or ±0.5K, or ±0.1K, the method comprises skipping an applicable cooling or heating step.

29. The method according to any one of claims 25 to 28, wherein the method is a wafer quality metrology method, and wherein the method further comprises subsequently loading the wafer onto a measurement area of ​​a wafer quality metrology device.

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