Dual scanning ion implantation system

Abstract

The invention relates to a dual scanning ion implantation system. The dual scanning type ion implantation system according to one embodiment of the present invention comprises: a processing chamber for performing ion beam scanning; first and second scanning robots disposed inside the processing chamber; the equipment front end module (EFEM) is arranged on one side of the processing cavity and is provided with a plurality of wafer boxes; after first and second scanning robots inside a processing chamber receive wafers from the equipment front end module (EFEM) through different wafer scanning transfer paths that are not overlapped, the first and second scanning robots alternately perform ion beam scanning.

Description

Technical Field

[0001] The present invention discloses a dual scanning ion implantation system. More specifically, the dual scanning ion implantation system solves the problem that the existing single ion scanning robot handles all the moving in and out transportation and scanning for changing chips alone, and is completely unable to scan during the chip transportation, thereby greatly reducing the chip processing efficiency (throughput), and the problem of wasting expensive ion beams during transportation. Background Art

[0002] The semiconductor device manufacturing process usually repeatedly performs oxidation process, photo-etching process, diffusion process, ion implantation process and metal process on silicon wafer.

[0003] The ion implantation process in the process refers to implanting charged impurities into the wafer in a desired amount and depth using a preset energy. The ion implantation process in semiconductor technology usually refers to implanting dopant ions on the surface of a silicon wafer.

[0004] The ion implanter used in the ion implantation process consists of the following four main parts.

[0005] These main parts can be divided into the following areas: an ion source area as an area for extracting ion beams, a mass analyzer for classifying the extracted ion beams according to the required mass, and a terminal area including a beam line as a path for the ion beams to pass through; and an end-station area for transferring the wafer and finally injecting the ion beams. In the end-station area, the wafer is scanned in a processing chamber in a high vacuum state and the ion beam is injected into the wafer.

[0006] The ion implantation device is provided with an ion scanning robot in the processing chamber. The ion scanning robot moves the wafers into the processing chamber one by one and performs scanning (ion implantation) and moving them out. The entire process needs to be handled separately and is usually also called a single scanning ion implantation system.

[0007] An example of the single scanning ion implantation system is described in detail in Korean Patent Registration No. 1311885 (hereinafter referred to as "prior document").

[0008] Please refer to the previous literature Figure 1The wafers W are moved one by one from the wafer box 71 into the vacuum processing chamber 20 through the dedicated load lock chamber 40A and the opening and closing door 41A installed on the side of the ion implantation system. The wafers W after the ion scanning are moved out to the wafer box 72 through the dedicated load lock chamber 40B and the opening and closing door 41B.

[0009] However, the existing single scanning ion implantation system disclosed in the previous document has only one ion scanning robot (also called "single ion scanning robot") inside the vacuum processing chamber. Therefore, the single ion scanning robot needs to handle all the moving in and out transportation and scanning for changing chips alone. Therefore, scanning cannot be performed during the chip transportation, which greatly reduces the chip processing efficiency (throughput). In addition, expensive ion beams are wasted during the transportation, and serious problems such as these may occur.

[0010] Previous Literature

[0011] Korean Patent Registration No. 1311885 (Registered on September 17, 2013) Summary of the invention

[0012] The present invention aims to solve the problems mentioned above. The purpose of the present invention is to provide a dual scanning ion implantation system, which solves the problem that the existing single ion scanning robot handles all the carrying in and out transportation and scanning for replacing the chip alone, and is completely unable to scan during the chip transportation, thereby causing a significant reduction in chip processing efficiency (throughput), and the problem of wasting expensive ion beams during transportation.

[0013] An embodiment of the present invention for achieving the above-mentioned purpose includes: a processing chamber for performing ion beam scanning; a first and a second scanning robot configured inside the processing chamber; and an equipment front end module (EFEM) disposed on one side of the processing chamber and equipped with a plurality of wafer boxes; after the first and the second scanning robots inside the processing chamber each receive a wafer from the equipment front end module through different non-overlapping wafer scanning transfer paths, the first and the second scanning robots perform ion beam scanning alternately.

[0014] Moreover, according to one embodiment of the present invention, it further includes: a first load lock chamber assembly connected to one end of the equipment front end module (EFEM); a first vacuum transfer module (VTM) disposed between the first load lock chamber assembly and the processing chamber; a second load lock chamber assembly connected to the other end of the equipment front end module; and a second vacuum transfer module (VTM) disposed between the second load lock chamber assembly and the processing chamber.

[0015] Furthermore, according to one embodiment of the present invention, a first wafer scanning transfer path is formed to reciprocate from one of the plurality of wafer boxes to the equipment front-end module, the first load lock chamber assembly, the first vacuum transfer module (VTM), the processing chamber, and the first scanning robot. At the same time, a second wafer scanning transfer path is formed to reciprocate from one of the plurality of wafer boxes to the equipment front-end module, the second load lock chamber assembly, the second vacuum transfer module (VTM), the processing chamber, and the second scanning robot.

[0016] Moreover, according to one embodiment of the present invention, the ion beam is irradiated between the first and second scanning robots inside the processing chamber, and the first and second scanning robots arranged on both sides of the ion beam irradiation area allow the wafer to be alternately exposed to the ion beam irradiation area for continuous scanning.

[0017] Furthermore, according to one embodiment of the present invention, one side of the first or second vacuum transfer module (VTM) is provided with an aligner for aligning the direction of the small grooves of the wafer.

[0018] Furthermore, according to one embodiment of the present invention, the first load lock chamber assembly and the second load lock chamber assembly are each divided into an upper chamber and a lower chamber for transferring wafers into or out of the first or second vacuum transfer module (VTM).

[0019] Furthermore, according to one embodiment of the present invention, the first and second vacuum transfer modules (VTMs) each maintain a high vacuum state corresponding to the process chamber and are provided with a vacuum robot therein for transferring wafers between the first or second load lock chamber assembly, the aligner and the process chamber.

[0020] Moreover, according to one embodiment of the present invention, the first and second scanning robots each include: an L1 axis, which is vertically coupled to one side of the first link and is driven by a first driving unit to rotate the first link; an L2 axis, a second link having the same length as the first link, which is stacked on the upper part of the first link and vertically coupled to the other side of the first link and one side of the second link stacked thereon and is driven by a second driving unit to rotate the second link; an R axis, a support frame supporting the scanning head is stacked on the upper part of the other side of the second link and is vertically coupled to the other side of the second link and the center of the support frame and is driven by a third driving unit to rotate the support frame; a Y axis, which is horizontally coupled to the support frame and supports both sides of the scanning head and is driven by a fourth driving unit to rotate the scanning head; and an S axis, which is driven by a fifth driving unit to rotate a wafer chuck on which the wafer is placed and adjust the twist angle (Twist Angle) or orientation (Orientation) of the wafer. Angle); the first driving unit and the second driving unit are driven synchronously, the first connecting rod rotates left and right based on the L1 axis, and the second connecting rod rotates left and right based on the L2 axis, thereby causing the scanning head to move horizontally left and right.

[0021] As described above, the present invention, by virtue of two chip loading and unloading paths connected to the processing chamber and two ion scanning robots provided inside the processing chamber, has a very beneficial effect in solving the problems existing in the existing single ion scanning robot, namely, the problem of reducing chip processing efficiency (throughput) by handling all the loading and unloading transportation and scanning for chip replacement independently, and wasting expensive ion beams during chip transportation. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] Figure 1 1 is a top view showing a conventional single scanning ion implantation system.

[0023] Figure 2 FIG. 1 is a top view of a dual scanning ion implantation system according to an embodiment of the present invention.

[0024] Figure 3 It is enlarged to show Figure 2 A top view of the process chamber is shown.

[0025] Figure 4 It is enlarged to show Figure 2 A perspective view of the aligner shown.

[0026] Figure 5 It is enlarged to show Figure 2 A perspective view of the first and second load lock chamber assemblies is shown.

[0027] Figure 6 It is enlarged to show Figure 2 (a) a stereoscopic view, (b) a top view, and (c) an isolated stereoscopic view of the vacuum robot of the first and second vacuum transfer modules (VTM) are shown.

[0028] Figure 7 This is a conceptual diagram showing a wafer ion beam scanning method of the first and second scanning robots according to one embodiment of the present invention.

[0029] Figure 8 This is a schematic diagram for explaining the configuration of the first and second scanning robots according to one embodiment of the present invention.

[0030] Fig. 9 (a) and (b) are action diagrams for explaining that the L1-axis, L2-axis, and R-axis drive units of the first and second scanning robots of one embodiment of the present invention are synchronously driven to perform left-right scanning actions.

[0031] Fig.10 (a) and (b) are action diagrams for illustrating the 45° tilt scanning action of the first and second scanning robots according to an embodiment of the present invention.

[0032] Fig.11 (a) and (b) are action diagrams for explaining the movement of the scanning head caused by the Y-axis (tilt axis) drive in the first and second scanning robots in one embodiment of the present invention.

[0033] Fig.12 (a) and (b) are action diagrams for explaining how the twist angle or orientation angle of the wafer is adjusted according to the S-axis drive of the scanning head in the first and second scanning robots of one embodiment of the present invention.

[0034] Fig.13 It is used to illustrate the doping uniformity when the first and second scanning robots according to one embodiment of the present invention perform high-angle tilt ion implantation on the wafer.

[0035] Fig.14 The diagram shows a state in which a first scanning robot is waiting to perform a scanning operation after replacing a wafer at a wafer replacement position while a second scanning robot is scanning during (a) horizontal scanning and (b) 45-degree scanning according to an embodiment of the present invention.

[0036] Explanation of symbols

[0037] 10: Processing chamber

[0038] 20-1, 20-2: The first and second scanning robots

[0039] 30: Equipment Front End Module (EFEM)

[0040] 40-1, 40-2: First and second load lock chamber assemblies

[0041] 41, 42: upper cavity, lower cavity

[0042] 50-1, 50-2: First and second vacuum transport modules (VTM)

[0043] 60-1, 60-2: The first and second vacuum robots

[0044] 70, 70-1, 70-2: Aligner

[0045] 71: Vacuum chamber

[0046] 72: Wafer chuck

[0047] 73: Servo motor

[0048] 74: Perspective Window

[0049] 75: Visual Unit

[0050] P1, P2: First and second scanning transfer paths

[0051] W: chip

[0052] S: Wafer rotation axis (Rotation axis, Twist axis)

[0053] B: Ion beam irradiation area DETAILED DESCRIPTION

[0054] The terms used in this specification are only for describing specific embodiments and are not intended to limit the present invention. Unless it can be clearly distinguished in the context of the sentence, the singular expression also includes the plural. The terms "including", "having" or "having" of the present invention only specify the existence of features, numbers, steps, actions, elements, parts or their combinations recorded in the specification, and shall not be deemed to exclude in advance the possibility of the existence or addition of one or more other features, numbers, steps, actions, elements, parts or their combinations.

[0055] Unless otherwise defined in the specification, all terms used, including technical or scientific terms, have the same meanings as those commonly understood by people having ordinary knowledge in the technical field to which the present invention belongs.

[0056] The meaning of terms defined in general dictionaries should be interpreted as being consistent with the meaning according to the context of the text of the relevant technology, and shall not be interpreted abnormally or excessively formalistically unless explicitly defined in this specification.

[0057] The configuration and operation relationship of a dual scanning ion implantation system according to an embodiment of the present invention will be described in detail below with reference to the accompanying drawings.

[0058] Figure 2 FIG. 1 is a top view showing a dual scanning ion implantation system of the present invention according to one embodiment. Figure 3 It is enlarged to show Figure 2 A top view of the processing chamber shown, Figure 4 It is enlarged to show Figure 2 A perspective view of the aligner shown, Figure 5 It is enlarged to show Figure 2 A perspective view of the first and second load lock chamber assemblies shown, Figure 6 It is enlarged to show Figure 2 (a) a stereoscopic view, (b) a top view, and (c) an isolated stereoscopic view of the vacuum robot of the first and second vacuum transfer modules (VTM) are shown.

[0059] Please refer to the Figures 2 to 6 According to a configuration of an embodiment of the present invention, the present invention mainly includes a processing chamber 10, a first and a second scanning robot 20-1, 20-2, an equipment front end module (EFEM) 30, a first and a second load lock chamber assembly 40-1, 40-2, and a first and a second vacuum transfer module (VTM) 50-1, 50-2.

[0060] First, the processing chamber 10 is a processing space for scanning (ion implantation) a wafer W by means of an ion beam. At this time, the processing chamber 10 is kept at a high vacuum in order to realize a clean ion implantation environment without impurities (particles).

[0061] According to one embodiment of the present invention, Figure 2 and Figure 3 As shown, on one side of the processing chamber 10, the ion beam is incident into the processing chamber 10 and scans by meeting the wafer W at a location B (ion beam irradiation area) inside the processing chamber 10. On the other hand, an ion beam dump 11 is provided on the opposite side of the processing chamber 10 where the ion beam is incident.

[0062] For example, the ion beam irradiates the central part of the processing chamber 10. The ion beam may be in the form of a ribbon ion beam or a point ion beam that performs line scanning in one direction of the electric field and the magnetic field. Furthermore, the first and second scanning robots 20-1 and 20-2 disposed on both sides of the ion beam irradiation area allow the wafer W to be alternately exposed to the ion beam irradiation area for continuous scanning.

[0063] The first and second scanning robots 20-1 and 20-2 are disposed in the processing chamber 10. The first and second scanning robots 20-1 and 20-2 carry the wafer W into or out of the processing chamber 10 under high vacuum or perform scanning operations of exposing the carried wafer W to ion beams.

[0064] At this time, the first and second scanning robots 20-1 and 20-2 of the present invention are different from the existing single scanning robot. While one of the first and second scanning robots 20-1 and 20-2 is transferring the wafer W into or out of the processing chamber 10, the other robot can perform scanning. Furthermore, when scanning is completed, the robot that has completed the transfer performs scanning alternately and continuously, thereby preventing the problem of wasting expensive ion beams.

[0065] Moreover, the Equipment Front End Module (EFEM, Equipment Front End Module, 30) is a standard interface module of a process equipment that is usually used in a semiconductor production line to supply wafers W in a wafer box C or a front opening wafer transfer box (FOUP, Front Opening Unified Pod) to a processing chamber 10. According to one embodiment of the present invention, it is configured on one side of the processing chamber 10 in the following state, which is a state in which one side is installed with multiple loading ports for placing multiple wafer boxes C or front opening wafer transfer boxes.

[0066] Furthermore, the first load lock chamber assembly 40-1 is connected to one end of the tool front end module 30. The first load lock chamber assembly 40-1 is an intermediate module for inserting the wafer W transferred from the tool front end module 30 of atmospheric pressure atmosphere into the processing chamber 10.

[0067] Furthermore, a first vacuum transfer module (VTM) is provided between the first load lock chamber assembly 40-1 and the processing chamber 10. The first vacuum transfer module (VTM) is an intermediate module where the wafer W waits before being put into the processing chamber 10, and maintains a high vacuum corresponding to the processing chamber 10.

[0068] Thus, a first wafer scanning transfer path P1 is formed which reciprocates from one of the plurality of wafer boxes C to the equipment front-end module 30, the first load lock chamber assembly 40-1, the first vacuum transfer module 50-1, the processing chamber 10, and the first scanning robot 20-1 (see Figure 2 ).

[0069] On the other hand, the second load lock chamber assembly 40 - 2 is connected to the other end of the equipment front end module 30 .

[0070] Furthermore, a second vacuum transfer module 50 - 2 is disposed between the second load lock chamber assembly 40 - 2 and the processing chamber 10 .

[0071] Thus, similar to the first wafer scanning transfer path P1, a second wafer scanning transfer path P2 is formed, which is a reciprocating path from one of the plurality of wafer boxes C to the equipment front-end module 30, the second load lock chamber assembly 40-2, the second vacuum transfer module 50-2, the processing chamber 10, and the second scanning robot 20-2 (see Figure 2 ).

[0072] Therefore, the central portion of the processing chamber 10 is formed with an ion beam irradiation area S (see Figure 3 ), the first and second scanning robots 20-1 and 20-2 arranged on both sides of the ion beam irradiation area S allow the wafers W uploaded to the first and second scanning robots 20-1 and 20-2 to be alternately exposed to the ion beam irradiation area for continuous scanning.

[0073] Please refer to Figure 2 According to one embodiment of the present invention, one side of each of the first or second vacuum transfer modules 50-1, 50-2 has a small groove (notch, see Fig.12 ) direction aligner 70.

[0074] More specifically, please refer to Figure 4 The aligner 70 includes: a vacuum chamber 71 having a wafer loading and unloading groove 71a connected to the first or second vacuum conveying module 50-1, 50-2; a wafer chuck 72, which is arranged inside the vacuum chamber 71 and allows the wafer W introduced through the wafer loading and unloading groove 71a to be placed; a servo motor 73, which is arranged below the wafer chuck 72 and drives the wafer W loaded onto the wafer chuck 72 to rotate a certain angle in one direction or in the opposite direction; and a visual unit 75, which is arranged above the vacuum chamber 71 and uses a perspective window 74 on the upper surface of the vacuum chamber 71 to detect a small groove (notch, please refer to Fig.12 ) to capture the image.

[0075] Here, according to other embodiments, the configuration of the aligner 70 is not limited to the visual unit 75 for image capture. According to other embodiments, a sensor (not shown) can be used to replace the visual unit 75 and identify the outer contour and small groove of the wafer W.

[0076] Also, please refer to Figure 5 According to one embodiment of the present invention, the first load lock chamber assembly 40-1 and the second load lock chamber assembly 40-2 are each divided into an upper chamber 41 and a lower chamber 42 for moving the wafer W into or out of the first or second vacuum transfer module 50-1, 50-2.

[0077] For example, the upper chamber 41 is provided with a wafer carrying groove 41a for carrying the wafer W into the first vacuum transfer module 50-1, and the wafer W is transferred to the first vacuum robot 60-1 in the first vacuum transfer module 50-1 through the wafer carrying groove 41a.

[0078] Similarly, the lower chamber 42 is provided with a wafer unloading groove 42a for unloading the wafer W from the first vacuum transfer module 50-1. After the wafer unloading groove 42a is opened, the wafer W that has completed ion implantation (scanning) is received from the first vacuum robot 60-1 inside the first vacuum transfer module 50-1.

[0079] In the foregoing description, the first load lock chamber assembly 40-1 and the second load lock chamber assembly 40-2 are vertically divided into the upper chamber 41 and the lower chamber 42 respectively for the purpose of considering the space efficiency on the wafer transfer path. However, the present invention is not limited thereto, and a horizontal division configuration can also perform the same function.

[0080] Also, please refer to Figure 6 According to one embodiment of the present invention, the first and second vacuum transfer modules 50-1, 50-2 each maintain a high vacuum state corresponding to the processing chamber 10, and each is provided with the first and second vacuum robots 60-1, 60-2 for transferring the wafer W in or out between the first or second load lock chamber assembly 40-1, 40-2, the aligner 70 and the processing chamber 10.

[0081] At this time, according to other embodiments, the aligner 70 can obviously be deformed in various ways, for example, installed adjacent to the device front end module 30 .

[0082] on the other hand, Figure 7 1 is a conceptual diagram showing a wafer ion beam scanning method of the first and second scanning robots according to an embodiment of the present invention. Figure 8 is a schematic diagram for explaining the configuration of the first and second scanning robots according to one embodiment of the present invention. Fig. 9 (a) and (b) are action diagrams for explaining that the L1 axis, L2 axis, and R axis drive units of the first and second scanning robots of one embodiment of the present invention are synchronously driven to perform left and right scanning actions. Fig.10 (a) and (b) are action diagrams for explaining the 45° tilt scanning action of the first and second scanning robots according to one embodiment of the present invention. Fig.11 (a) and (b) are action diagrams for explaining the motion of the scanning head caused by the Y-axis (tilt axis) driving in the first and second scanning robots of one embodiment of the present invention. Fig.12 (a) and (b) are action diagrams for explaining how the twist angle or orientation angle of a wafer is adjusted according to the S-axis driving of the scanning head in the first and second scanning robots of one embodiment of the present invention. Fig.13 The diagram is a top view for explaining the doping uniformity when the first and second scanning robots according to one embodiment of the present invention perform high-angle tilt ion implantation on a wafer.

[0083] The following is combined with Figures 7 to 13 The configuration and operation relationship of the first and second scanning robots of the present invention are described in detail.

[0084] like Figure 7 and Figure 8 As shown, for the vertical scanning ion beam (Vertical Scan Ion Beam), the first and second scanning robots for implanting ions into a semiconductor wafer according to an embodiment of the present invention perform left and right mechanical scanning in all directions within the horizontal plane through the movement of five driving axes consisting of the L1 axis, the L2 axis, the R axis, the Y axis (tilt axis), and the S axis.

[0085] First, if Figure 8 As shown, a first driving unit 110 is provided at a lower portion of one side of the first link 100, and an L1 axis 120 as a driving axis of the first driving unit 110 is vertically coupled to one side of the first link 100. The L1 axis 120 becomes a reference axis of the first and second scanning robots 20-1 and 20-2, and the first driving unit 110 drives the first link 100 to rotate left and right.

[0086] Also, the second link 200 is stacked on the upper portion of the first link 100 .

[0087] A second driving unit 210 is disposed inside the other side of the first connecting rod 100, and an L2 shaft 220 as a driving shaft of the second driving unit protrudes from the upper part and is vertically coupled to one side of the second connecting rod 200. The L2 shaft 220 drives the second connecting rod 200 to rotate left and right by the driving of the second driving unit 210.

[0088] Furthermore, the support frame 300 supporting the scanning head 400 is stacked on the other upper side of the second link 200 .

[0089] A third driving unit 310 is disposed inside the other side of the second connecting rod 200. An R shaft 320 as a driving shaft of the third driving unit 310 protrudes from the upper part and is vertically coupled to the center of the support frame 300. The R shaft 320 is driven by the third driving unit 310 to rotate the support frame 300 left and right.

[0090] Here, the first driving unit 110 , the second driving unit 210 , and the third driving unit 310 are driven in synchronization.

[0091] like Fig. 9 As shown in (a) and (b), if the scan is 0°, Fig. 9 In the initial state of (a), if Fig. 9 As shown in (b), when the first driving unit 110 is driven, the first connecting rod 100 rotates with the L1 axis 120 as the reference, and when the second driving unit 210 synchronized with the first driving unit is driven, the second connecting rod 200 having the same length as the first connecting rod rotates with the L2 axis 220 as the reference to allow the scanning head 400 to move horizontally to the left and right.

[0092] Combine the following Fig. 9 (b) To further explain in detail, the first connecting rod 100 is driven by the first driving unit 110 to rotate to the left based on the L1 axis 120. At the same time, the second connecting rod 200 is driven by the second driving unit 210 synchronized with the first driving unit to rotate to the left based on the L2 axis 220. Then, the first connecting rod 100 is driven by the first driving unit 110 to rotate to the right based on the L1 axis 120. At the same time, the second connecting rod 200 is driven by the second driving unit 210 synchronized with the first driving unit to rotate to the right based on the L2 axis 220, so that the scanning head 400 moves horizontally to the left and right. At the same time, the scanning head 400 is driven by the third driving unit 310 synchronized with the first driving unit 110 to rotate to the left and right based on the R axis 320. At this time, the R axis 320 plays an adjustment function to keep the incident angle of the ion beam fixed during the left and right scanning process.

[0093] That is, the scanning head 400 realizes a scalar motion that can scan in any designated direction in the horizontal direction by simultaneously rotating the L1 axis 120 , the L2 axis 220 , and the R axis 320 .

[0094] Moreover, if Fig.10 As shown in (a) and (b), if the scanning is tilted at 45°, Fig.10As shown in (a), the L1 axis 120 serving as a reference is rotated 45° in the initial state of 0°. At this time, if the L1 axis 120 is rotated 45° by the driving of the first driving unit 110, the first link 100, the second link 200, and the scanning head 400 rotate at an angle of 45°. Then, when the scanning head 400 is tilted 45°, as shown in FIG. Fig.10 (b) shows that the scanning head 400 is moved horizontally to the left and right. Fig. 9 The description of (b) is carried out in the same manner.

[0095] That is, the scanning head 400 can achieve scalar motion for scanning in any designated direction in the horizontal direction while being tilted at 45°.

[0096] On the other hand, the scanning head 400 supported by the support frame 300 is coupled to a Y-axis (tilt axis) 420 coupled horizontally.

[0097] like Figure 8 As shown, a fourth driving unit 410 is provided on one side of the support frame 300, and a Y-axis 420 serving as a driving axis of the fourth driving unit 410 is horizontally coupled to the support frame 300 to support both sides of the scanning head 400, and the scanning head 400 is driven to rotate by the fourth driving unit 410.

[0098] like Fig.11 As shown in (a) and (b), the Y-axis 420 driven and rotated by the fourth driving unit 410 performs the following functions: rotating the scanning head 400 to a wafer loading or unloading position or rotating a wafer placed on a wafer chuck of the scanning head to an ion implantation position or an ion beam profiling position.

[0099] like Fig.12 As shown in FIG. 5 (a), the scanning head 400 includes a wafer chuck 401 for holding a wafer, an S-axis 402 for driving the wafer chuck 401 to rotate, and a fifth driving unit 403 for driving the S-axis 402 .

[0100] Moreover, if Fig.12 As shown in (b), the S-axis 402 is perpendicular to the Y-axis 420 and is driven by the fifth driving unit 403 to rotate the wafer chuck 401 on which the wafer is placed to adjust the twist angle or orientation angle of the wafer.

[0101] Here, the first reason why the tilt angle and twist angle need to be adjusted when injecting ions is that in order to prevent the ion beam channeling effect that occurs along the crystal direction of the semiconductor, the ion beam incident angle needs to be adjusted in the crystal direction where it is more difficult to form a channel. The second reason is that ion implantation needs to be performed at multiple angles on semiconductors that are recently constructed with a three-dimensional structure.

[0102] Therefore, the present invention realizes scalar motion that can scan in any specified direction in the horizontal direction through the action of the L1 axis 120 and the L2 axis 220, adjusts through the action of the R axis 320 so that the incident angle of the ion beam remains fixed during the left and right scanning process, and adjusts the twist angle (Twist Angle) or azimuth (Orientation Angle) of the chip through the action of the S axis 402.

[0103] Fig.13 It is a top view for explaining the doping uniformity when the first and second scanning robots according to one embodiment of the present invention perform high-angle tilt ion implantation on the wafer.

[0104] like Fig.13 As shown, the first and second scanning robots 20 - 1 and 20 - 2 allow all positions on the wafer to be scanned by equidistant ion beams with uniform ion beam density during 0° Tilt Implantation.

[0105] At the same time, even if the tilt is performed at a high angle, there is no difference in ion beam paths at all positions on the wafer because the wafer is scanned left and right by a vertical ribbon ion beam or a vertical scanning beam without being affected by the tilt angle. Thus, a certain beam uniformity is maintained during the wafer scanning process, and ions are uniformly implanted at all positions on the wafer.

[0106] As mentioned above, the present invention can scan the wafer in any specified horizontal direction so that the ion beam can be uniformly implanted on the wafer. When performing low-energy ion implantation at a high tilt angle, all positions on the wafer can be irradiated by equidistant ion beams, thereby greatly improving the doping uniformity on the wafer.

[0107] Moreover, it can solve the doping uniformity problem induced by the distance difference of the ion beam path caused by the chip position in the scanning direction and the resulting change in the ion beam size in the prior art, and at the same time, it can also meet the doping uniformity requirements of the new generation of semiconductors.

[0108] Fig.14The diagram shows a state in which a first scanning robot is waiting to perform a scanning operation after replacing a wafer at a wafer replacement position while a second scanning robot is scanning during (a) horizontal scanning and (b) 45-degree scanning according to an embodiment of the present invention.

[0109] As mentioned above, the first and second scanning robots of the present invention can perform scanning operations uninterruptedly in an alternating manner while the scanning robot on one side performs scanning operations while the scanning robot on the other side replaces the wafer and waits for scanning operations.

[0110] At the same time, the present invention is not limited to the one embodiment described above, and the same effect can be achieved by changing the detailed composition or quantity and configuration structure of the device. It is hereby made clear that a person with general knowledge in the technical field to which the present invention belongs can realize the addition, deletion and deformation of various structures within the technical spirit of the present invention.

Claims

1. A dual scanning ion implantation system, characterized in that: include: processing chamber, performing ion beam scanning; The first and second scanning robots are arranged inside the processing chamber; and, The equipment front-end module is arranged at one side of the processing chamber and is equipped with a plurality of wafer boxes; After the first and second scanning robots in the processing chamber receive the wafer from the equipment front-end module respectively through different non-overlapping wafer scanning transfer paths, the first and second scanning robots perform ion beam scanning alternately.

2. The dual scanning ion implantation system according to claim 1, characterized in that: Also includes: a first load lock chamber assembly connected to one end of the equipment front end module; a first vacuum transfer module disposed between the first load lock chamber assembly and the processing chamber; A second load lock chamber assembly connected to the other end of the tool front end module; and The second vacuum transfer module is disposed between the second load lock chamber assembly and the processing chamber.

3. The dual scanning ion implantation system according to claim 2, characterized in that: A first wafer scanning transfer path is formed which reciprocates from one of the plurality of wafer boxes to the equipment front-end module, the first load lock chamber assembly, the first vacuum transfer module, the processing chamber, and the first scanning robot, and at the same time, A second wafer scanning transfer path is formed which reciprocates from one of the plurality of wafer boxes to the equipment front-end module, the second load lock chamber assembly, the second vacuum transfer module, the processing chamber, and the second scanning robot.

4. The dual scanning ion implantation system according to claim 1, characterized in that: The ion beam is irradiated between the first and second scanning robots inside the processing chamber. The first and second scanning robots arranged on both sides of the ion beam irradiation area allow the wafer to be alternately exposed to the ion beam irradiation area for continuous scanning.

5. The dual scanning ion implantation system according to claim 2, characterized in that: One side of the first or second vacuum transfer module is provided with an aligner for aligning the direction of the small grooves of the wafer.

6. The dual scanning ion implantation system according to claim 2, characterized in that: The first load lock chamber assembly and the second load lock chamber assembly are each divided into an upper chamber and a lower chamber for transferring wafers into or out of the first or second vacuum transfer module.

7. The dual scanning ion implantation system according to claim 2, characterized in that: The first and second vacuum transfer modules each maintain a high vacuum state corresponding to the process chamber and are provided with a vacuum robot therein for transferring a wafer between the first or second load lock chamber assembly, the aligner and the process chamber.

8. The dual scanning ion implantation system according to claim 1, characterized in that: The first and second scanning robots each include: The L1 axis is vertically coupled to one side of the first connecting rod, and drives the first connecting rod to rotate by the driving of the first driving unit; L2 axis, a second link having the same length as the first link is stacked on the upper part of the first link, vertically connected to the other side of the first link and one side of the second link stacked thereon, and driven by a second driving unit to drive the second link to rotate; R axis, a support frame supporting the scanning head is stacked on the upper part of the other side of the second connecting rod, vertically connected to the other side of the second connecting rod and the center of the support frame, and driven by the third driving unit to drive the support frame to rotate; A Y-axis is horizontally coupled to the support frame to support both sides of the scanning head, and is driven by a fourth driving unit to drive the scanning head to rotate; and The S axis is driven by the fifth driving unit to rotate the wafer chuck on which the wafer is placed so as to adjust the twist angle or orientation angle of the wafer; The first driving unit and the second driving unit are driven synchronously, the first connecting rod rotates left and right based on the L1 axis, and the second connecting rod rotates left and right based on the L2 axis, thereby causing the scanning head to move horizontally left and right.

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