Bonding device and bonding method

Abstract

The invention provides a bonding device and method. The bonding device comprises a wafer table which is located at the upper part of the bonding device and is used for adsorbing the back surface of a wafer to be bonded from top to bottom; the wafer table is positioned at the lower part of the bonding device and is used for adsorbing the back surface of the chip to be bonded from bottom to top; the pickup assembly is located on the wafer table and used for adsorbing the front face, to be bonded, of the chip so as to pick up the chip from the wafer table and turn over the chip upwards; the bonding assembly is positioned on the pickup assembly and is used for adsorbing the back surface of the chip so as to obtain the chip from the pickup assembly, and upwards overturning the chip again so as to bond the front surface of the chip to a preset bonding position on the front surface of the wafer; and the at least one group of fan filtering unit is positioned on the side surface of the bonding device and is used for providing a transverse wind field between the wafer tables.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor manufacturing, and in particular to a bonding device and a bonding method. Background Art

[0002] In the semiconductor manufacturing industry, wafer bonding technology is widely used to connect the bonded parts to the substrate wafer. Existing bonding equipment usually adopts a multi-step operation process. First, the pick-up component is used to take out the bonded parts from the wafer supply box, and then the bonding component is used to move the bonded parts to the bonding position to bond the bonded parts to the substrate wafer.

[0003] However, this existing bonding machine usually places the wafer under the bonding machine and bonds the chip from the top to the wafer surface. This method of placing the wafer face up and bonding from top to bottom is very easy to allow external contamination and collision to the bonding surface of the wafer and chip, thus forming defects.

[0004] In addition, in existing bonding devices, the wafer stage for adsorbing wafers and the wafer stage for adsorbing chips usually adopt a different axis design. After the bonding head obtains the chip picked up from the wafer stage from the pickup head, it usually needs to first move the chip laterally to the top of the wafer stage, and then bond the chip downward to the surface of the wafer. This lateral transfer bonding method requires a large equipment area, which seriously limits the large-scale integration of the bonding device.

[0005] In order to overcome the above-mentioned defects of the prior art, the art is in urgent need of a bonding technology that can not only avoid defects on the surfaces to be bonded of wafers and chips caused by external contamination and collision, but also reduce the footprint of the equipment, thereby improving space utilization and facilitating large-scale integration of multiple bonding devices. Summary of the invention

[0006] A brief summary of one or more aspects is given below to provide a basic understanding of these aspects. This summary is not an exhaustive overview of all conceived aspects, and is neither intended to identify the key or decisive elements of all aspects nor to define the scope of any or all aspects. Its only purpose is to give some concepts of one or more aspects in a simplified form as a prelude to a more detailed description that will be given later.

[0007] In order to overcome the above-mentioned defects of the prior art, the present invention provides a bonding device and a bonding method, which can not only be used to avoid defects on the surfaces to be bonded of wafers and chips caused by external pollution and collision, but also can reduce the footprint of the equipment, thereby improving the utilization of space, which is conducive to the large-scale integration of multiple bonding devices.

[0008] Specifically, the bonding device provided according to the first aspect of the present invention includes: a wafer stage, located at the upper part of the bonding device, used to absorb the back side of the wafer to be bonded from top to bottom; a wafer stage, located at the lower part of the bonding device, used to absorb the back side of the chip to be bonded from bottom to top; a pickup assembly, located above the wafer stage, used to absorb the front side of the chip to be bonded, so as to pick up the chip from the wafer stage and flip the chip upward; a bonding assembly, located above the pickup assembly, used to absorb the back side of the chip, so as to obtain the chip from the pickup assembly, and flip the chip upward again, so as to bond its front side to a preset bonding position on the front side of the wafer; and at least one set of fan filter units, located on the side of the bonding device, used to provide a lateral wind field between the wafer stage and the wafer stage. Compared with the traditional fan filter unit's top-down air supply method, the fan filter unit that provides a lateral wind field used in the present invention can effectively avoid the upper wafer table from blocking the clean, uniform temperature wind field, thereby ensuring the cleanliness and uniform temperature of the chip and wafer surfaces to be bonded.

[0009] Furthermore, in some embodiments of the present invention, the fan filter unit includes: an air supply component, which is arranged on one side of the bonding device, and is used to blow gas laterally from the one side to between the wafer table and the wafer stage; and an air exhaust component, which is arranged on the other side opposite to the bonding device, and is used to extract gas laterally from between the wafer table and the wafer stage from the other side, so that both sides of the bonding device have the same gas flow rate.

[0010] Furthermore, in some embodiments of the present invention, the air supply assembly includes: a first fan, used to provide positive pressure for blowing the gas between the wafer table and the chip stage; a first static pressure chamber, provided at the rear end of the first fan, used to stabilize the positive pressure provided by the first fan; a first flow equalizing section, provided at the rear end of the first static pressure chamber, used to evenly distribute the positive pressure output by the first static pressure chamber to multiple areas between the wafer table and the chip stage to form a transverse laminar wind field between the wafer table and the chip stage; and a filter, used to purify the gas to be blown in.

[0011] Furthermore, in some embodiments of the present invention, the exhaust assembly includes: a second fan, used to provide negative pressure to extract the gas between the wafer table and the chip stage; a second static pressure chamber, provided at the front end of the second fan, used to stabilize the negative pressure provided by the second fan; and a second flow equalizing portion, provided at the front end of the second static pressure chamber, used to evenly distribute the negative pressure output by the second static pressure chamber to multiple areas between the wafer table and the chip stage, so as to form a transverse laminar wind field between the wafer table and the chip stage.

[0012] Furthermore, in some embodiments of the present invention, the bonding device includes multiple groups of the fan filter units, wherein the first fan filter unit is located at the upper part of the bonding device, and is used to provide a first lateral wind field to the wafer stage and the bonding assembly, and the second fan filter unit is located at the lower part of the bonding device, and is used to provide a second lateral wind field to the wafer stage and the pickup assembly.

[0013] Furthermore, in some embodiments of the present invention, the wafer stage includes a first lateral displacement mechanism for laterally moving the chip so that its front side is aligned with the first suction nozzle of the pickup assembly, and the pickup assembly includes the first suction nozzle, a first lifting mechanism and a first rotating mechanism, wherein, after the first lifting mechanism aligns the front side of the chip with the first suction nozzle, the first suction nozzle is first lowered to adsorb its front side, and then the first suction nozzle is raised to make the back side of the chip leave the wafer stage, and the first rotating mechanism flips the chip upward after the back side of the chip leaves the wafer stage.

[0014] Furthermore, in some embodiments of the present invention, the wafer table includes a second lateral displacement mechanism for moving the wafer laterally so that the bonding position on the front side thereof is aligned with the second suction nozzle of the bonding assembly, and the bonding assembly includes the second suction nozzle, a second lifting mechanism and a second rotating mechanism, wherein, after the first rotating mechanism flips the chip upward, the second lifting mechanism first lowers the second suction nozzle to adsorb the back side of the chip, and then raises the second suction nozzle to separate the front side of the chip from the first suction nozzle, and after the front side of the chip is separated from the first suction nozzle, the second rotating mechanism flips the chip upward again, and after the second rotating mechanism flips the chip upward again, the second lifting mechanism raises the second suction nozzle to bond the front side of the chip to the bonding position on the front side of the wafer.

[0015] Furthermore, in some embodiments of the present invention, the bonding device also includes: a first camera, used to capture a first image of the first suction nozzle and the chip on a flipping path in which the first rotating mechanism flips the chip upward, so as to indicate a first alignment deviation between the first suction nozzle and the chip; and a second camera, used to capture a second image of the second suction nozzle and the chip on a flipping path in which the second rotating mechanism flips the chip upward again, so as to indicate a second alignment deviation between the second suction nozzle and the chip.

[0016] Furthermore, in some embodiments of the present invention, the bonding device also includes a controller, which is configured to: laterally move the chip according to the first alignment deviation so that its front side is aligned with the first suction nozzle; and laterally move the wafer according to the second alignment deviation so that the bonding position on its front side is aligned with the chip adsorbed on the second suction nozzle.

[0017] Furthermore, in some embodiments of the present invention, the wafer table also includes a third rotating mechanism, and the controller is further configured to: horizontally rotate the wafer according to the second alignment deviation so that the bonding position on the front side is aligned with the chip adsorbed on the second nozzle.

[0018] Furthermore, in some embodiments of the present invention, the bonding assembly also includes a leveling mechanism, which is used to first level the second suction nozzle relative to the wafer after the second rotating mechanism flips the chip upward again, and then bonds the front side of the chip to the bonding position on the front side of the wafer via the second lifting mechanism.

[0019] In addition, the bonding method provided according to the second aspect of the present invention includes the following steps: bonding the front side of a chip to be bonded from bottom to top to a preset bonding position on the front side of a wafer via a wafer stage, a wafer stage, a pickup assembly and a bonding assembly of a bonding device as described in any one of the first aspect of the present invention; and in the process of bonding the chip, providing a lateral wind field between the wafer stage and the wafer stage via at least one group of fan filter units of the bonding device. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] The above features and advantages of the present invention can be better understood after reading the detailed description of the embodiments of the present disclosure in conjunction with the following drawings. In the drawings, the components are not necessarily drawn to scale, and components with similar related properties or features may have the same or similar reference numerals.

[0021] Figure 1 A schematic structural diagram of a bonding device provided according to some embodiments of the present invention is shown.

[0022] Figure 2 A schematic structural diagram of a fan filter unit provided according to some embodiments of the present invention is shown.

[0023] Figure 3 A schematic structural diagram of a mounting base provided according to some embodiments of the present invention is shown.

[0024] Figure 4 A structural schematic diagram of a bonding component pick-up state provided according to some embodiments of the present invention is shown.

[0025] Figure 5A structural schematic diagram of the bonding state of a bonding assembly provided according to some embodiments of the present invention is shown.

[0026] Figure 6 A schematic diagram of a bonding process provided according to some embodiments of the present invention is shown.

[0027] Figure 7 A schematic diagram of a bonding process provided according to some embodiments of the present invention is shown.

[0028] Reference numerals:

[0029] 10 Mounting base

[0030] 20 Wafer table

[0031] 30 Wafer stage

[0032] 40 Pickup Components

[0033] 50 Bonded components

[0034] 501 Second nozzle

[0035] 5021 Second Macro Motion Agency

[0036] 5022 Second micro-motion mechanism

[0037] 503 Second Rotating Mechanism

[0038] 504 Leveling mechanism

[0039] 51 Air supply components

[0040] 511 First Fan

[0041] 512 First static pressure chamber

[0042] 513 First current equalization unit

[0043] 514 filter

[0044] 52 Exhaust assembly DETAILED DESCRIPTION

[0045] The following specific embodiments illustrate the implementation of the present invention, and those skilled in the art can easily understand other advantages and effects of the present invention from the contents disclosed in this specification. Although the description of the present invention will be introduced in conjunction with the preferred embodiment, this does not mean that the features of this invention are limited to this implementation. On the contrary, the purpose of introducing the invention in conjunction with the implementation is to cover other options or modifications that may be extended based on the claims of the present invention. In order to provide a deep understanding of the present invention, the following description will include many specific details. The present invention can also be implemented without using these details. In addition, in order to avoid confusion or blurring the focus of the present invention, some specific details will be omitted in the description.

[0046] In the description of the present invention, it should be noted that, unless otherwise clearly specified and limited, the terms "installed", "connected", and "connected" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection, or it can be indirectly connected through an intermediate medium, or it can be the internal communication of two components. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0047] In addition, the terms "upper", "lower", "left", "right", "top", "bottom", "horizontal" and "vertical" used in the following description should be understood as the directions shown in the paragraph and the related drawings. Such relative terms are only used for the convenience of description and do not mean that the device described therein must be manufactured or operated in a specific direction, and therefore should not be understood as limiting the present invention.

[0048] It is understood that although the terms "first", "second", "third", etc. may be used herein to describe various components, regions, layers and / or parts, these components, regions, layers and / or parts should not be limited by these terms, and these terms are only used to distinguish different components, regions, layers and / or parts. Therefore, the first component, region, layer and / or part discussed below may be referred to as a second component, region, layer and / or part without departing from some embodiments of the present invention.

[0049] As mentioned above, in the semiconductor manufacturing industry, wafer bonding technology is widely used to connect the bonded parts to the substrate wafer. Existing bonding equipment usually adopts a multi-step operation process, firstly, the pick-up component is used to take out the bonded parts from the wafer supply box, and then the bonding component is used to move the bonded parts to the bonding position to bond the bonded parts to the substrate wafer.

[0050] However, this existing bonding machine usually places the wafer under the bonding machine and bonds the chip from the top to the wafer surface. This method of placing the wafer face up and bonding from top to bottom is very easy to allow external contamination and collision to the bonding surface of the wafer and chip, thus forming defects.

[0051] In addition, in existing bonding devices, the wafer stage for adsorbing wafers and the wafer stage for adsorbing chips usually adopt a different axis design. After the bonding head obtains the chip picked up from the wafer stage from the pickup head, it usually needs to first move the chip laterally to the top of the wafer stage, and then bond the chip downward to the surface of the wafer. This lateral transfer bonding method requires a large equipment area, which seriously limits the large-scale integration of the bonding device.

[0052] In order to overcome the above-mentioned defects of the prior art, the present invention provides a bonding device and a bonding method, which can not only be used to avoid defects on the surfaces to be bonded of wafers and chips caused by external pollution and collision, but also can reduce the footprint of the equipment, thereby improving the utilization of space, which is conducive to the large-scale integration of multiple bonding devices.

[0053] The bonding equipment is also equipped with a traditional fan filter unit, whose wind direction is downward along the direction of gravity, thereby providing a horizontal clean and uniform temperature wind field to overcome the problem of the upper wafer table blocking the air supply from top to bottom.

[0054] In some non-limiting embodiments, the bonding method provided in the second aspect of the present invention can be implemented based on the bonding device provided in the first aspect of the present invention.

[0055] Please refer to Figure 1-2 , Figure 1 A schematic structural diagram of a bonding device provided according to some embodiments of the present invention is shown. Figure 2 A schematic structural diagram of a fan filter unit provided according to some embodiments of the present invention is shown.

[0056] like Figure 1-2 As shown, the bonding device includes a wafer stage 20, a wafer stage 30, a pickup assembly 40, a bonding assembly 50 and at least one set of fan filter units.

[0057] The wafer stage 20 is located at the upper part of the bonding device, and is used to absorb the back side of the wafer to be bonded from top to bottom. The wafer stage 30 is located at the lower part of the bonding device, and is used to absorb the back side of the chip to be bonded from bottom to top. The pickup assembly 40 is located above the wafer stage 30, and is used to absorb the front side of the chip to be bonded, so as to pick up the chip from the wafer stage 30, and flip the chip upward. The bonding assembly 50 is located above the pickup assembly 40, and is used to absorb the back side of the chip, so as to obtain the chip from the pickup assembly 40, and flip the chip upward again, so as to bond its front side to the preset bonding position on the front side of the wafer. The at least one set of fan filter units is located on the side of the bonding device, and is used to provide a lateral wind field between the wafer stage 20 and the wafer stage 30.

[0058] Compared with the traditional fan filter unit's top-down air supply method, the fan filter unit that provides a lateral wind field used in the present invention can effectively avoid the upper wafer table from blocking the clean, uniform temperature wind field, thereby ensuring the cleanliness and uniform temperature of the chip and wafer surfaces to be bonded.

[0059] In some embodiments, the fan filter unit includes an air supply component 51 and an air exhaust component 52. The air supply component 51 is disposed on one side (e.g., the left side) of the bonding device, and is used to blow gas laterally from one side to between the wafer stage 20 and the wafer stage 30. The air exhaust component 52 is disposed on the other side (e.g., the right side) of the bonding device, and is used to draw gas laterally from between the wafer stage 20 and the wafer stage 30 from the other side, so that both sides of the bonding device have the same gas flow rate.

[0060] In some embodiments, the air supply assembly 51 includes a first fan 511, a first static pressure chamber 512, a first flow equalizing section 513 and a filter 514. The first fan 511 is used to provide a positive pressure of the gas to be blown between the wafer table 20 and the wafer table 30. The first static pressure chamber 512 is provided at the rear end of the first fan 511, and is used to stabilize the positive pressure provided by the first fan 511. The first flow equalizing section 513 is provided at the rear end of the first static pressure chamber 512, and is used to evenly distribute the positive pressure output by the first static pressure chamber 512 to multiple areas between the wafer table 20 and the wafer table 30, so as to form a horizontal laminar wind field between the wafer table 20 and the wafer table 30. The filter 514 can be a high-mesh filter 514, which is used to purify the gas to be blown.

[0061] In some embodiments, the exhaust assembly 52 includes a second fan, a second static pressure chamber, and a second flow equalizing unit. The second fan is used to provide a negative pressure to extract gas between the wafer stage 20 and the wafer stage 30. The second static pressure chamber is provided at the front end of the second fan, and is used to stabilize the negative pressure provided by the second fan. The second flow equalizing unit is provided at the front end of the second static pressure chamber, and is used to evenly distribute the negative pressure output by the second static pressure chamber to multiple areas between the wafer stage 20 and the wafer stage 30, so as to form a horizontal laminar wind field between the wafer stage 20 and the wafer stage 30.

[0062] In some embodiments, the bonding device may include multiple sets of fan filter units. The first fan 511 filter unit is located at the upper part of the bonding device, and is used to provide a first lateral wind field to the wafer stage 20 and the bonding assembly 50. The second fan filter unit is located at the lower part of the bonding device, and is used to provide a second lateral wind field to the wafer stage 30 and the pickup assembly 40.

[0063] Optionally, the first fan 511 filter unit and the second fan filter unit support independent control. For example, the first wind field can be smaller than the second wind field according to the requirements of pollution degree, bonding temperature, etc., so as to facilitate the use of a larger wind field to clean the dust and other pollutants at the bottom and avoid the excessive wind field affecting the wafer table 20 to maintain the bonding temperature.

[0064] Optionally, each fan filter unit can adjust the wind force in real time according to the posture of the corresponding pickup assembly 40 / bonding assembly 50. For example, when the bonding head / pickup head is vertical, a larger wind field is provided to clean the chip, and when the bonding head / pickup head is horizontally corrected, the wind force is reduced to prevent the chip from falling off, or the chip bending affects the correction.

[0065] Please refer to Figure 3 to Figure 5 , Figure 3 A schematic structural diagram of a mounting base provided according to some embodiments of the present invention is shown. Figure 4 A structural schematic diagram of a bonding component pick-up state provided according to some embodiments of the present invention is shown. Figure 5 A structural schematic diagram of the bonding state of a bonding assembly provided according to some embodiments of the present invention is shown.

[0066] like Figure 3 As shown, the wafer stage 20 includes a second lateral displacement mechanism for lateral movement of the wafer so that the bonding position of the front side of the wafer is aligned with the second suction nozzle 501 of the bonding assembly 50. Here, the second lateral displacement mechanism can perform macro and micro movement in the X and Y directions.

[0067] Specifically, the bonding assembly 50 includes a second suction nozzle 501, a second lifting mechanism and a second rotating mechanism 503. Here, the second suction nozzle 501 is arranged at the end of the bonding assembly 50 for sucking the chip. The second rotating mechanism 503 is rigidly connected to the mounting base 10 of the bonding assembly 50 and rotates in the Rx or Ry direction. The second lifting mechanism may include a second macro-motion mechanism 5021 and a second micro-motion mechanism 5022 for moving in the Z direction, and the axis of the second lifting mechanism and the first lifting mechanism described below may overlap in the vertical direction.

[0068] Furthermore, after the first rotating mechanism flips the chip upward, the second lifting mechanism first lowers the second suction nozzle 501 to adsorb the back side of the chip, and then raises the second suction nozzle 501 to separate the front side of the chip from the first suction nozzle. After the front side of the chip is separated from the first suction nozzle, the second rotating mechanism 503 flips the chip upward again. After the second rotating mechanism 503 flips the chip upward again, the second lifting mechanism raises the second suction nozzle 501 to bond the front side of the chip to the bonding position on the front side of the wafer.

[0069] Optionally, after the first rotating mechanism flips the chip upward, the second lifting mechanism may first rise via the first lifting assembly to allow the second suction nozzle 501 to adsorb the back of the chip, and then descend via the first lifting assembly to allow the front of the chip to separate from the first suction nozzle.

[0070] Accordingly, the wafer stage 30 includes a first lateral displacement mechanism for lateral displacement of the chip so that the front of the chip is aligned with the first nozzle of the pickup assembly 40. Here, the first lateral displacement mechanism can perform macro and micro movements in the X and Y directions.

[0071] Specifically, the pickup assembly 40 includes a first suction nozzle, a first lifting mechanism and a first rotating mechanism. Here, the first suction nozzle is arranged at the end of the pickup assembly 40 for sucking the chip. The first rotating mechanism is rigidly connected to the mounting base 10 of the pickup assembly 40 and rotates in the Rx or Ry direction. The first lifting mechanism may include a first macro-motion mechanism and a first micro-motion mechanism for moving in the Z direction. The axes of the first lifting mechanism and the second lifting mechanism may overlap in the vertical direction.

[0072] Furthermore, after the first lifting mechanism aligns the front side of the chip with the first suction nozzle, it first lowers the first suction nozzle to adsorb its front side, and then raises the first suction nozzle to make the back side of the chip separate from the wafer stage 30. After the back side of the chip separates from the wafer stage 30, the first rotating mechanism flips the chip upward.

[0073] Please refer to Figure 6 , Figure 6 A schematic diagram of a bonding process provided according to some embodiments of the present invention is shown.

[0074] like Figure 6 As shown, the bonding device further includes a first camera, a second camera, a third rotating mechanism and a leveling mechanism 504 .

[0075] The first camera is used to capture a first image of the first suction nozzle and the chip on the flipping path of the first rotating mechanism flipping the chip upward, so as to indicate a first alignment deviation between the first suction nozzle and the chip. The second camera is used to capture a second image of the second suction nozzle 501 and the chip on the flipping path of the second rotating mechanism 503 flipping the chip upward again, so as to indicate a second alignment deviation between the second suction nozzle 501 and the chip. Here, the bonding device can move the chip laterally according to the first alignment deviation so that its front side is aligned with the first suction nozzle. And according to the second alignment deviation, the wafer is moved laterally so that the bonding position of its front side is aligned with the chip adsorbed on the second suction nozzle 501.

[0076] The third rotating mechanism can horizontally rotate the wafer according to the second alignment deviation so that the bonding position on the front side is aligned with the chip adsorbed on the second suction nozzle 501 .

[0077] The leveling mechanism 504 can perform micro-movements in the Rx, Ry, and Rz directions, and is used to first level the second suction nozzle 501 relative to the wafer after the chip is flipped upward again by the second rotating mechanism 503, and then bond the front side of the chip to the bonding position on the front side of the wafer via the second lifting mechanism.

[0078] Please refer to Figure 7 , Figure 7 A schematic diagram of a bonding process provided according to some embodiments of the present invention is shown.

[0079] like Figure 7 As shown, the bonding device also includes a third camera, a fourth camera and a fifth camera.

[0080] The third camera is used to collect a third image of the first suction nozzle and the chip during the process of the first lifting mechanism picking up the chip, so as to indicate a third alignment deviation between the first suction nozzle and the chip.

[0081] The fourth camera is used to collect fourth images of the first suction nozzle and the second suction nozzle 501 when the first lifting mechanism moves the chip upward, so as to indicate a fourth alignment deviation between the first suction nozzle and the second suction nozzle 501 .

[0082] The fifth camera is used to collect a fifth image of the chip and the wafer during the process of the second lifting mechanism moving the chip upward to the wafer, so as to indicate a fifth alignment deviation between the chip and the wafer.

[0083] Here, the third camera acquires a third image of the chip and the pickup assembly 40 , and based on the third image, the position of the wafer stage 30 is adjusted along the X and Y directions to align the chip with the first lifting mechanism.

[0084] Afterwards, the first lifting mechanism moves downward to pick up the chip, and the first rotating mechanism flips the chip upward. Here, the first camera is used to capture a first image of the first suction nozzle and the chip on the flipping path of the first rotating mechanism flipping the chip upward to indicate a first alignment deviation between the first suction nozzle and the chip.

[0085] Then, the first lifting mechanism moves the chip upward. Here, the fourth camera is used to collect a fourth image of the first suction nozzle and the second suction nozzle 501 during the process of the first lifting mechanism moving the chip upward, so as to indicate a fourth alignment deviation between the first suction nozzle and the second suction nozzle 501.

[0086] After that, the second rotating mechanism 503 flips the chip upward again. Here, the second camera is used to capture a second image of the second suction nozzle 501 and the chip on the flipping path of the second rotating mechanism 503 flipping the chip upward again to indicate a second alignment deviation between the second suction nozzle 501 and the chip.

[0087] Finally, the second lifting mechanism moves the chip upward to the wafer. Here, the fifth camera is used to collect a fifth image of the chip and the wafer during the process of the second lifting mechanism moving the chip upward to the wafer to indicate a fifth alignment deviation between the chip and the wafer.

[0088] The working principle of the above-mentioned bonding device will be described below in conjunction with some embodiments of the bonding method. Those skilled in the art will understand that the embodiments of these bonding methods are only some specific solutions provided by the present invention for the convenience of public implementation, and are not used to limit all functions or all working modes of the bonding device. Similarly, the bonding device is also only some non-restrictive implementation methods provided by the present invention, and does not constitute a limitation on the execution subject or execution order of each step in these bonding methods.

[0089] Specifically, the bonding device can bond the front side of a chip to be bonded from bottom to top to a preset bonding position on the front side of a wafer via the wafer stage 20, the wafer stage 30, the pickup assembly 40 and the bonding assembly 50. Afterwards, during the chip bonding process, a lateral wind field is provided between the wafer stage 20 and the wafer stage 30 via at least one set of fan filter units of the bonding device.

[0090] In summary, the bonding device and method provided by the present invention can be used to prevent the lower wafer stage from being blocked by the upper wafer stage, thereby facilitating the wind curtain to continuously protect the bonding area to improve the overall cleanliness of the equipment.

[0091] Although the above methods are illustrated and described as a series of actions for simplicity of explanation, it should be understood and appreciated that these methods are not limited by the order of the actions, because according to one or more embodiments, some actions may occur in a different order and / or concurrently with other actions from those illustrated and described herein or not illustrated and described herein but understandable to those skilled in the art.

[0092] The previous description of the disclosure is provided to enable any person skilled in the art to make or use the disclosure. Various modifications to the disclosure will be apparent to those skilled in the art, and the general principles defined herein may be applied to other variations without departing from the spirit or scope of the disclosure. Thus, the disclosure is not intended to be limited to the examples and designs described herein, but should be granted the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A bonding device, characterized in that: include: A wafer table, located at the upper part of the bonding device, used for adsorbing the back side of the wafer to be bonded from top to bottom; A wafer stage, located at the bottom of the bonding device, used to absorb the back side of the chip to be bonded from bottom to top; A pick-up component, located on the wafer stage, used to absorb the front side of the chip to be bonded, so as to pick up the chip from the wafer stage and flip the chip upwards; A bonding assembly, located above the pickup assembly, for adsorbing the back side of the chip to obtain the chip from the pickup assembly, and flipping the chip upward again to bond its front side to a preset bonding position on the front side of the wafer; as well as At least one set of fan filter units is located on the side of the bonding device and is used to provide a lateral wind field between the wafer stage and the chip stage.

2. The bonding device according to claim 1, characterized in that The fan filter unit comprises: an air supply assembly, disposed at one side of the bonding device, for blowing gas laterally from the one side to between the wafer stage and the wafer stage; and The exhaust assembly is arranged on the other side opposite to the bonding device, and is used to extract gas laterally from between the wafer table and the wafer stage from the other side, so that both sides of the bonding device have the same gas flow rate.

3. The bonding device according to claim 2, characterized in that The air supply assembly includes: a first blower, for providing a positive pressure for blowing the gas between the wafer stage and the wafer table; A first static pressure chamber, disposed at the rear end of the first fan, for stabilizing the positive pressure provided by the first fan; a first flow balancing portion, disposed at the rear end of the first static pressure chamber, for evenly distributing the positive pressure output by the first static pressure chamber to a plurality of areas between the wafer table and the wafer stage, so as to form a lateral laminar flow wind field between the wafer table and the wafer stage; and The filter is used to purify the gas to be blown in.

4. The bonding device according to claim 2, characterized in that The exhaust assembly includes: a second fan, for providing negative pressure between the wafer stage and the wafer table to extract the gas; a second static pressure chamber, disposed at the front end of the second fan, for stabilizing the negative pressure provided by the second fan; and The second flow equalizing portion is disposed at the front end of the second static pressure chamber, and is used for evenly distributing the negative pressure output by the second static pressure chamber to a plurality of areas between the wafer stage and the chip stage, so as to form a transverse laminar wind field between the wafer stage and the chip stage.

5. The bonding device according to claim 1, characterized in that The bonding device includes a plurality of sets of fan filter units, wherein: The first fan filter unit is located at the upper part of the bonding device, and is used to provide a first lateral wind field to the wafer table and the bonding assembly. The second fan filter unit is located at the lower part of the bonding device and is used to provide a second transverse wind field to the wafer stage and the pickup assembly.

6. The bonding device according to claim 1, characterized in that The wafer stage includes a first lateral displacement mechanism for lateral movement of the chip so that the front side of the chip is aligned with the first suction nozzle of the pickup assembly. The pickup assembly includes the first suction nozzle, a first lifting mechanism and a first rotating mechanism, wherein, after the first lifting mechanism aligns the front side of the chip with the first suction nozzle, the first suction nozzle is first lowered to adsorb the front side thereof, and then the first suction nozzle is raised to make the back side of the chip separate from the wafer stage; and the first rotating mechanism flips the chip upward after the back side of the chip separates from the wafer stage.

7. The bonding device according to claim 6, characterized in that The wafer stage includes a second lateral displacement mechanism for lateral movement of the wafer so that the bonding position on the front side of the wafer is aligned with the second suction nozzle of the bonding assembly. The bonding assembly includes the second suction nozzle, a second lifting mechanism and a second rotating mechanism, wherein, after the first rotating mechanism flips the chip upward, the second lifting mechanism first lowers the second suction nozzle to adsorb the back side of the chip, and then raises the second suction nozzle to separate the front side of the chip from the first suction nozzle; after the front side of the chip is separated from the first suction nozzle, the second rotating mechanism flips the chip upward again; and after the second rotating mechanism flips the chip upward again, the second lifting mechanism raises the second suction nozzle to bond the front side of the chip to the bonding position on the front side of the wafer.

8. The bonding device according to claim 7, characterized in that Also includes: a first camera, configured to capture a first image of the first nozzle and the chip on a flipping path of the first rotating mechanism flipping the chip upward, so as to indicate a first alignment deviation between the first nozzle and the chip; as well as The second camera is used to capture a second image of the second suction nozzle and the chip on a flipping path where the second rotating mechanism flips the chip upward again, so as to indicate a second alignment deviation between the second suction nozzle and the chip.

9. The bonding device according to claim 8, characterized in that The bonding device also includes a controller, which is configured to: moving the chip laterally according to the first alignment deviation so that the front side of the chip is aligned with the first nozzle; and The wafer is laterally moved according to the second alignment deviation so that the bonding position on the front side of the wafer is aligned with the chip adsorbed on the second suction nozzle.

10. The bonding device according to claim 9, characterized in that The wafer stage also includes a third rotating mechanism, and the controller is further configured to: The wafer is horizontally rotated according to the second alignment deviation so that the bonding position on the front side is aligned with the chip adsorbed on the second suction nozzle.

11. The bonding device according to claim 7, characterized in that: The bonding assembly also includes a leveling mechanism, which is used to first level the second suction nozzle relative to the wafer after the second rotating mechanism flips the chip upward again, and then bonds the front side of the chip to the bonding position on the front side of the wafer via the second lifting mechanism.

12. A bonding method, characterized in that: The following steps are involved: Bonding the front side of a chip to be bonded from bottom to top to a preset bonding position on the front side of a wafer by means of the wafer stage, the wafer stage, the pick-up assembly and the bonding assembly of the bonding apparatus according to any one of claims 1 to 11; and During the process of bonding the chip, a lateral wind field is provided between the wafer stage and the chip stage via at least one set of fan filter units of the bonding device.

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