Perovskite solar cell laminated assembly and preparation method thereof, and photovoltaic system

Abstract

The invention discloses a perovskite solar cell laminated assembly, a preparation method thereof and a photovoltaic system, and relates to the technical field of solar cell laminated assemblies. The perovskite solar cell laminated assembly comprises TCO glass, a first functional layer, a first top electrode, a second functional layer and a second top electrode which are laminated in sequence. One or more groups of P1a grooves / P3a grooves, P2a grooves, P2b grooves and P3b grooves which are arranged in sequence are formed in the transverse direction of the TCO glass; the P2b groove and the P2a groove serve as conductive channels and are used for enabling the second top electrode to be electrically connected with the transparent conductive oxide thin film on the surface of the TCO glass. According to the technical scheme, the grooves are reasonably arranged, the thermal influence generated by laser etching of the grooves can be greatly reduced, the overall mechanical stability of the perovskite solar cell laminated assembly is improved, the electric leakage loss and the short circuit risk generated by the tunneling layer can be effectively relieved, and the photoelectric conversion efficiency of the perovskite solar cell laminated assembly is improved.

Description

Technical Field

[0001] The present application relates to the technical field of solar cells, and in particular to a perovskite solar cell stack assembly and a preparation method thereof, and a photovoltaic system. Background Art

[0002] Perovskite materials themselves have excellent photoelectric properties, such as high light absorption coefficient, long carrier diffusion length and adjustable band gap, which make perovskite solar cells have high photoelectric conversion efficiency. Compared with traditional silicon-based solar cells, the advantages of perovskite solar cells are that they have high photoelectric conversion efficiency, low production cost and solution processability. Double-junction stacked perovskite solar cells (perovskite solar cell stacked modules) are composed of two cells with different bandgap absorbers. By differentially absorbing sunlight with a wider range of wavelengths and reducing photon thermal losses, they have shown great advantages in breaking the efficiency limit (Shockley-Queisser) of single-junction solar cells.

[0003] At present, in the stacked modules of perovskite solar cells, the electrode layer of the middle stack plays a vital role as the tunneling layer (also called the intermediate connection layer or interconnection layer). The tunneling layer not only needs to realize the effective transmission of carriers inside the battery, but also ensure the optical coupling on both sides of the battery, while reducing parasitic absorption and improving the overall photoelectric conversion efficiency of the battery. If the tunneling layer of the stacked modules of perovskite solar cells is too thick, there will be large leakage losses and a certain short circuit risk; if the tunneling layer is too thin, it will be unfavorable for the preparation of the light absorption layer (such as the perovskite light absorption layer) stacked above the tunneling layer, which will affect the overall photoelectric conversion efficiency of the battery.

[0004] It should be noted that the above content is not necessarily prior art, nor is it intended to limit the scope of patent protection of this application. Summary of the invention

[0005] In view of the deficiencies in the prior art, the purpose of this application is to provide a perovskite solar cell stack assembly and a preparation method thereof, and a photovoltaic system. One or more groups of P1a grooves / P3a grooves, P2a grooves, P2b grooves, and P3b grooves are arranged in sequence along the lateral direction of the TCO glass, and the P2b grooves and P2a grooves are used as conductive channels to electrically connect the second top electrode to the transparent conductive oxide film on the surface of the TCO glass. The grooves are reasonably arranged and can greatly reduce the thermal impact caused by laser scribing of the grooves, thereby improving the overall mechanical stability of the perovskite solar cell stack assembly, and can also effectively alleviate the leakage loss and short circuit risk caused by the tunneling layer (the first top electrode is the tunneling layer), thereby improving the photoelectric conversion efficiency of the perovskite solar cell stack assembly; and when the tunneling layer is thickened and no insulating material is filled in the P2b groove and the P2a groove, the leakage loss and short circuit risk caused by the tunneling layer can still be effectively alleviated, and the thickened tunneling layer is conducive to the preparation of a light absorption layer (such as a perovskite light absorption layer) stacked above the tunneling layer, thereby further improving the photoelectric conversion efficiency of the perovskite solar cell stack assembly.

[0006] To achieve the above purpose, this application adopts the following technical solutions: A perovskite solar cell stack assembly, comprising a TCO glass, a first functional layer, a first top electrode, a second functional layer, and a second top electrode stacked in sequence; one or more groups of P1a grooves / P3a grooves, P2a grooves, P2b grooves, and P3b grooves arranged in sequence are arranged along the lateral direction of the TCO glass; Among them, the P1a groove penetrates the transparent conductive oxide film on the surface of the TCO glass; the P2a groove penetrates the first functional layer; the P3a groove penetrates the first top electrode; the P2b groove penetrates the second functional layer; the P3b groove sequentially penetrates the second top electrode, the second functional layer, and the first top electrode; the P2b groove and the P2a groove in the same group serve as conductive channels to electrically connect the second top electrode with the transparent conductive oxide film on the surface of the TCO glass.

[0007] In some embodiments, the material of the first top electrode includes one or more of ITO, IZO, IWO, FTO, ICO, AZO, and BZO; the thickness of the first top electrode is 205-250 nm; and / or The material of the second top electrode includes one or more of ITO, IZO, IWO, FTO, ICO, AZO, and BZO; the thickness of the second top electrode is 100-200 nm.

[0008] In some embodiments, the width of the P1a groove is 40-60 μm; and / or The width of the P2a groove is 100-150 μm; and / or The width of the P3a groove is 20-30 μm; and / or The width of the P2b groove is 50-80 μm; and / or The width of the P3b groove is 40-70 μm.

[0009] In some embodiments, the projection spacing between the P2a groove and the P2b groove in the thickness direction is 400-600 μm; and / or The projection distance between the P2b groove and the P3b groove in the thickness direction is 500-700 μm.

[0010] In some embodiments, the first functional layer includes a first hole transport layer, a first perovskite light absorption layer, and a first electron transport layer stacked in sequence; wherein the first hole transport layer is disposed on the transparent conductive oxide film of the TCO glass; and / or The second functional layer includes a second hole transport layer, a second perovskite light absorption layer, and a second electron transport layer stacked in sequence; wherein the second hole transport layer is arranged on the first top electrode.

[0011] In some embodiments, the first perovskite light absorbing layer is a wide bandgap perovskite layer, and the second perovskite light absorbing layer is a narrow bandgap perovskite layer.

[0012] In some embodiments, the thickness of the first perovskite light absorbing layer is 400-600 nm; and / or The thickness of the second perovskite light absorbing layer is 400-600 nm.

[0013] The present application also provides a method for preparing a perovskite solar cell stack assembly, comprising: Scribing a P1a groove on the TCO glass that penetrates the transparent conductive oxide film on the surface of the TCO glass; After the P1a groove is provided, a first hole transport layer, a first perovskite light absorption layer, and a first electron transport layer are sequentially prepared on the TCO glass; a P2a groove is engraved on the first electron transport layer to sequentially penetrate the first electron transport layer, the first perovskite light absorption layer, and the first hole transport layer; On the first electron transport layer where the P2a groove has been carved, a first top electrode is prepared; on the first top electrode, a P3a groove is carved to penetrate the first top electrode; Sequentially preparing a second hole transport layer, a second perovskite light absorption layer, and a second electron transport layer on the first top electrode having the P3a groove carved thereon; carving a P2b groove on the second electron transport layer that sequentially penetrates the second electron transport layer, the second perovskite light absorption layer, and the second hole transport layer; On the second electron transport layer having the P2b groove carved thereon, a second top electrode is prepared; on the second top electrode, a P3b groove is carved to sequentially penetrate the second top electrode, the second electron transport layer, the second perovskite light absorption layer, the second hole transport layer, and the first top electrode; Among them, the perovskite solar cell stack assembly includes the TCO glass, the first hole transport layer, the first perovskite light absorption layer, the first electron transport layer, the first top electrode, the second hole transport layer, the second perovskite light absorption layer, the second electron transport layer, and the second top electrode stacked in sequence; the P1a groove, P3a groove, P2a groove, P2b groove, and P3b groove satisfy the following conditions: one or more groups of the P1a groove / the P3a groove, the P2a groove, the P2b groove, and the P3b groove are arranged in sequence along the lateral direction of the TCO glass; the P2b groove and the P2a groove in the same group serve as conductive channels to electrically connect the second top electrode with the transparent conductive oxide film on the surface of the TCO glass.

[0014] In some embodiments, the method for preparing the second perovskite light absorbing layer comprises a doctor blade coating method; the method for preparing the second perovskite light absorbing layer by the doctor blade coating method satisfies at least one of the following characteristics: (1) The thickness of the second perovskite light absorbing layer is 400-600 nm; (2) The thickness of the first top electrode is 205-250 nm.

[0015] The present application also provides a photovoltaic system, comprising: The above-mentioned perovskite solar cell stack assembly; or The perovskite solar cell stacked component is prepared by the above-mentioned preparation method.

[0016] In the technical solution of the present application, one or more groups of P1a grooves / P3a grooves, P2a grooves, P2b grooves, and P3b grooves are arranged in sequence along the lateral direction of the TCO glass, and the P2b grooves and P2a grooves are used as conductive channels to electrically connect the second top electrode to the transparent conductive oxide film on the surface of the TCO glass. The grooves are reasonably arranged, and can greatly reduce the thermal impact caused by laser scribing of the grooves, thereby improving the overall mechanical stability of the perovskite solar cell stack assembly, and can also effectively alleviate the leakage loss and short circuit risk caused by the tunneling layer (the first top electrode is the tunneling layer), thereby improving the photoelectric conversion efficiency of the perovskite solar cell stack assembly; and when the tunneling layer is thickened and the insulating material is not filled in the P2b groove and the P2a groove, the leakage loss and short circuit risk caused by the tunneling layer can still be effectively alleviated, and the thickened tunneling layer is conducive to the preparation of a light absorption layer (such as a perovskite light absorption layer) stacked above the tunneling layer, thereby further improving the photoelectric conversion efficiency of the perovskite solar cell stack assembly. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] In the accompanying drawings, unless otherwise specified, the same reference numerals throughout the multiple drawings represent the same or similar parts or elements. These drawings are not necessarily drawn to scale. It should be understood that these drawings only depict some embodiments disclosed in the present application and should not be regarded as limiting the scope of the present application. Figure 1 This is a schematic diagram of the structure of a perovskite solar cell stack assembly in an embodiment of the present application; Figure 2 This is a schematic structural diagram of another perovskite solar cell stack assembly in an embodiment of the present application; Numbers in the figure: 1, TCO glass; 2, first hole transport layer; 3, first perovskite light absorption layer; 4, first electron transport layer; 5, first top electrode; 6, second hole transport layer; 7, second perovskite light absorption layer; 8, second electron transport layer; 9, second top electrode. DETAILED DESCRIPTION

[0018] Embodiments of the present application are described in detail below, and examples of the embodiments are shown in the accompanying drawings. In the accompanying drawings, for clarity, the sizes of layers, regions, elements and their relative sizes may be exaggerated. Wherein the same or similar reference numerals throughout represent the same or similar elements or elements with the same or similar functions. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain the present application, and cannot be understood as limitations on the present application. It should be noted that, in the absence of conflict, the embodiments in the present application and the features in the embodiments can be combined with each other.

[0019] It should be understood that when an element or layer is referred to as "on ...", "adjacent to ...", "connected to" or "coupled to" other elements or layers, it can be directly on, adjacent to, connected to or coupled to other elements or layers, or there can be intervening elements or layers. On the contrary, when an element is referred to as "directly on ...", "directly adjacent to ...", "directly connected to" or "directly coupled to" other elements or layers, there is no intervening element or layer. It should be understood that although the terms first, second, third, etc. can be used to describe various elements, components, regions, layers and / or parts, these elements, components, regions, layers and / or parts should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or part from another element, component, region, layer or part. Therefore, without departing from the teachings of the present disclosure, the first element, component, region, layer or part discussed below can be represented as the second element, component, region, layer or part. And when the second element, component, region, layer or part is discussed, it does not mean that the present disclosure necessarily has the first element, component, region, layer or part.

[0020] In this application, unless otherwise clearly specified and limited, the terms "installed", "connected", "connected", "fixed" and the like should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements, unless otherwise clearly defined. For ordinary technicians in this field, the specific meanings of the above terms in this application can be understood according to specific circumstances.

[0021] It should be noted that the terms "first", "second", etc. in the specification and claims of the present application and the above-mentioned drawings are used to distinguish similar objects, and are not necessarily used to describe a specific order or sequence. It should be understood that the terms used in this way can be interchangeable where appropriate, so that the embodiments of the present application described herein can be implemented in an order other than those illustrated or described herein, for example. In addition, the terms "including" and "having" and any of their variations are intended to cover non-exclusive inclusions, for example, a process, method, system, product or device that includes a series of steps or units is not necessarily limited to those steps or units that are clearly listed, but may include other steps or units that are not clearly listed or inherent to these processes, methods, products or devices.

[0022] In the present application, when it comes to a numerical interval (i.e., a numerical range), unless otherwise specified, the distribution of the optional numerical values ​​in the numerical interval is considered to be continuous, and includes the two numerical endpoints (i.e., the minimum and maximum values) of the numerical interval, and each numerical value between the two numerical endpoints. Unless otherwise specified, when the numerical interval only refers to an integer in the numerical interval, it includes the two endpoint integers of the numerical range, and each integer between the two endpoints, which is equivalent to directly listing each integer. When multiple numerical ranges are provided to describe features or characteristics, these numerical ranges can be merged. In other words, unless otherwise specified, the numerical range disclosed in the present application should be understood to include any and all sub-ranges included therein. The "numerical value" in the numerical interval can be any quantitative value, such as a number, a percentage, a ratio, etc. "Numerical interval" allows for broadly including quantitative intervals such as percentage intervals, ratio intervals, and ratio intervals.

[0023] The embodiments of the present application aim to provide a perovskite solar cell stack assembly and a preparation method thereof, and a photovoltaic system. Along the lateral direction of the TCO glass 1, one or more groups of P1a grooves / P3a grooves, P2a grooves, P2b grooves, and P3b grooves are arranged in sequence, and the P2b grooves and P2a grooves are used as conductive channels to electrically connect the second top electrode 9 with the transparent conductive oxide film on the surface of the TCO glass 1. The grooves are reasonably arranged and can greatly reduce the thermal impact caused by laser scribing of the grooves, thereby improving the overall mechanical stability of the perovskite solar cell stack assembly, and can also effectively alleviate the leakage loss and short circuit risk caused by the tunneling layer (the first top electrode 5 is the tunneling layer), thereby improving the photoelectric conversion efficiency of the perovskite solar cell stack assembly; and when the tunneling layer is thickened and the insulating material is not filled in the P2b groove and the P2a groove, the leakage loss and short circuit risk caused by the tunneling layer can still be effectively alleviated, and the thickened tunneling layer is conducive to the preparation of the light absorption layer (such as the perovskite light absorption layer) stacked above the tunneling layer, thereby further improving the photoelectric conversion efficiency of the perovskite solar cell stack assembly.

[0024] The embodiment of the present application provides a perovskite solar cell stack assembly, comprising a TCO glass 1, a first functional layer, a first top electrode 5, a second functional layer, and a second top electrode 9 stacked in sequence; one or more groups of P1a grooves / P3a grooves, P2a grooves, P2b grooves, and P3b grooves arranged in sequence are arranged along the lateral direction of the TCO glass 1; Among them, the P1a groove penetrates the transparent conductive oxide film on the surface of the TCO glass 1; the P2a groove penetrates the first functional layer; the P3a groove penetrates the first top electrode 5; the P2b groove penetrates the second functional layer; the P3b groove sequentially penetrates the second top electrode 9, the second functional layer, and the first top electrode 5; the P2b groove and the P2a groove in the same group serve as conductive channels to electrically connect the second top electrode 9 with the transparent conductive oxide film on the surface of the TCO glass 1.

[0025] In the embodiment of the present application, one or more groups of P1a grooves / P3a grooves, P2a grooves, P2b grooves, and P3b grooves are arranged in sequence along the lateral direction of the TCO glass 1, specifically referring to the positional relationship of each groove; Figure 1-Figure 2 As shown, the P1a groove is located on the left side of the P2a groove, and the P3a groove is located on the left side of the P2a groove; more specifically, the P1a groove and the P3a groove can be aligned (the projections of the two in the thickness direction of the perovskite solar cell stack assembly completely overlap), or the P1a groove can be located on the left side of the P3a groove, or the P3a groove can be located on the left side of the P1a groove. Similarly, the P2a groove is located on the left side of the P2b groove, and the P2b groove is located on the left side of the P3b groove.

[0026] In the embodiment of the present application, TCO glass 1 refers to transparent conductive oxide coated glass, which is a conductive glass with good light transmittance and conductivity. There are three main types of TCO glass 1: ITO coated glass, FTO coated glass and AZO coated glass, and its main raw materials include TCO target and glass original sheet. The P1a groove is used to penetrate the transparent conductive oxide film on the surface of TCO glass 1.

[0027] In the embodiment of the present application, the first functional layer may include a hole transport layer, a perovskite light absorption layer, and an electron transport layer, and may include other newly added layers as needed, wherein the thickness of the hole transport layer may be 10-20nm, and the thickness of the electron transport layer may be 30-60nm. The second functional layer may include a hole transport layer, a perovskite light absorption layer, and an electron transport layer, and may include other newly added layers as needed, wherein the thickness of the hole transport layer may be 10-20nm, and the thickness of the electron transport layer may be 30-60nm.

[0028] The material of the hole transport layer may include one or more of Spiro-OMeTAD, triphenylamine derivatives, CuI, CuSCN, Cu2ZnSnS4, CuO, Cu2O, 2PACz, and MeO-2PACz; the thickness of the hole transport layer may be 1-100 nm (for example, 1 nm, 10 nm, 20 nm, 30 nm, 40 nm, 50 nm, 60 nm, 70 nm, 80 nm, 90 nm, and 100 nm). The thickness of the hole transport layer is. The preparation method of the hole transport layer may include one or more of spin coating, spray coating, electrochemical deposition, sputtering, and atomic layer deposition.

[0029] The materials of the electron transport layer may include TiO2, ZnO, WO3, SnO2, Zn2SnO4, C 60 、PC 61 The thickness of the electron transport layer may be 10-200 nm (e.g., 10 nm, 20 nm, 30 nm, 40 nm, 80 nm, 100 nm, 110 nm, 120 nm, 130 nm, 140 nm, 150 nm, 160 nm, 170 nm, 180 nm, 190 nm, 200 nm). The preparation method of the electron transport layer may include one or more of spin coating, spray coating, spray pyrolysis, slit coating, and atomic layer deposition.

[0030] The perovskite light absorption layer is made of a perovskite material, and the perovskite material may be an ABX3 structure; A is a monovalent cation; B is a divalent cation; and X is a monovalent anion. More specifically, A includes but is not limited to a mixture of one or more monovalent cations selected from cesium (Cs), rubidium (Rb), methylamine (CH3NH3), and guanidine (CH2(NH2)2); B includes but is not limited to a mixture of one or more divalent cations selected from lead (Pb), copper (Cu), zinc (Zn), gallium (Ga), tin (Sn), and calcium (Ca); and X includes but is not limited to a mixture of one or more monovalent anions selected from iodine (I), bromine (Br), chlorine (Cl), fluorine (F), and thiocyanate ion (SCN). The thickness of the perovskite light absorbing layer may be 400-1500 nm (eg, 400 nm, 500 nm, 600 nm, 700 nm, 800 nm, 900 nm, 1000 nm, 1100 nm, 1200 nm, 1500 nm). The preparation method of the perovskite light absorbing layer may include one or more of spin coating, spray coating, and slit coating.

[0031] In the embodiment of the present application, the material of the first top electrode 5 may include one or more transparent conductive materials; the material of the second top electrode 9 may include one or more transparent conductive materials, Au, Ag, Cu, and Al; the preparation methods of the first top electrode 5 and the second top electrode 9 may include one or more of evaporation, magnetron sputtering, printing, spin coating, scraping, spraying, spray pyrolysis, and slit coating.

[0032] In the embodiments of the present application, the scratching of the P1a groove, P3a groove, P2a groove, P2b groove, and P3b groove can be carried out by one or more of mechanical scratching, nanosecond infrared laser scratching, picosecond infrared laser scratching, femtosecond infrared laser scratching, and picosecond ultraviolet laser scratching.

[0033] In the embodiment of the present application, one or more groups of sequentially arranged P1a grooves / P3a grooves, P2a grooves, P2b grooves, and P3b grooves are provided along the lateral direction of the TCO glass 1, and the P2b grooves and P2a grooves are used as conductive channels to electrically connect the second top electrode 9 to the transparent conductive oxide film on the surface of the TCO glass 1. The grooves are reasonably arranged, and the thermal influence caused by laser scribing of the grooves can be greatly reduced, thereby improving the overall mechanical stability of the perovskite solar cell stack assembly, and effectively alleviating the leakage loss and short circuit risk caused by the tunneling layer (the first top electrode 5 is the tunneling layer), thereby improving the photoelectric conversion efficiency of the perovskite solar cell stack assembly; and when the tunneling layer is thickened and the insulating material is not filled in the P2b grooves and the P2a grooves, the leakage loss and short circuit risk caused by the tunneling layer can still be effectively alleviated, and the thickened tunneling layer is conducive to the preparation of the light absorption layer (such as the perovskite light absorption layer) stacked above the tunneling layer, thereby further improving the photoelectric conversion efficiency of the perovskite solar cell stack assembly.

[0034] In some embodiments, the material of the first top electrode 5 includes one or more of ITO (indium tin oxide), IZO (indium zinc oxide), IWO (indium tungsten oxide), FTO (fluorine-doped tin oxide), ICO (indium cobalt oxide), AZO (aluminum zinc oxide), and BZO (boron zinc oxide); the thickness of the first top electrode 5 is 205-250nm (for example, 205nm, 210nm, 215nm, 220nm, 225nm, 230nm, 235nm, 240nm, 245nm, 250nm); and / or The material of the second top electrode 9 includes one or more of ITO (indium tin oxide), IZO (indium zinc oxide), IWO (indium tungsten oxide), FTO (fluorine-doped tin oxide), ICO (indium cobalt oxide), AZO (aluminum zinc oxide), and BZO (boron zinc oxide); the thickness of the second top electrode 9 is 100~200nm (for example, 100nm, 110nm, 120nm, 130nm, 140nm, 150nm, 160nm, 170nm, 180nm, 190nm, 200nm).

[0035] In the embodiment of the present application, optimizing the thickness of the first top electrode 5 and the second top electrode 9 can effectively alleviate the leakage loss and short circuit risk caused by the tunneling layer (the first top electrode 5 is the tunneling layer), and improve the photoelectric conversion efficiency of the perovskite solar cell stack assembly; the thickened tunneling layer is conducive to the preparation of the light absorption layer (such as the perovskite light absorption layer) stacked above the tunneling layer, thereby further improving the photoelectric conversion efficiency of the perovskite solar cell stack assembly.

[0036] In some embodiments, the width of the P1a groove is 40-60 μm (eg, 40 μm, 45 μm, 50 μm, 55 μm, 60 μm); and / or The width of the P2a groove is 100-150 μm (e.g., 100 μm, 110 μm, 120 μm, 130 μm, 140 μm, 150 μm); and / or The width of the P3a groove is 20-30 μm (e.g., 20 μm, 22 μm, 24 μm, 26 μm, 28 μm, 30 μm); and / or The width of the P2b groove is 50-80 μm (e.g., 50 μm, 55 μm, 60 μm, 65 μm, 70 μm, 75 μm, 80 μm); and / or The width of the P3b groove is 40-70 μm (for example, 40 μm, 45 μm, 50 μm, 55 μm, 60 μm, 65 μm, 70 μm).

[0037] In the embodiment of the present application, optimizing the widths of the P1a groove, the P3a groove, the P2a groove, the P2b groove, and the P3b groove can make the current more evenly distributed in the series-connected cells, thereby improving the photoelectric conversion efficiency of the perovskite solar cell stack assembly.

[0038] In some embodiments, the projection spacing between the P2a groove and the P2b groove in the thickness direction is 400-600 μm (e.g., 400 μm, 450 μm, 500 μm, 550 μm, 600 μm); and / or A projection interval between the P2b groove and the P3b groove in the thickness direction is 500-700 μm (eg, 500 μm, 550 μm, 600 μm, 650 μm, 700 μm).

[0039] In the embodiment of the present application, the parameters of the P2a groove, the P2b groove, and the P3b groove are optimized, so that the current distribution in the series-connected cells can be more uniform, thereby improving the photoelectric conversion efficiency of the perovskite solar cell stack assembly.

[0040] In some embodiments, the first functional layer includes a first hole transport layer 2, a first perovskite light absorption layer 3, and a first electron transport layer 4 stacked in sequence; wherein the first hole transport layer 2 is disposed on the transparent conductive oxide film of the TCO glass 1; and / or The second functional layer includes a second hole transport layer 6, a second perovskite light absorption layer 7, and a second electron transport layer 8 stacked in sequence; wherein the second hole transport layer 6 is disposed on the first top electrode 5. In the embodiment of the present application, the structures of the upper and lower cells are consistent, which is conducive to improving the mechanical stability of the perovskite solar cell stacking component, and the preparation process is simpler and convenient for mass production.

[0041] In some embodiments, the first perovskite light absorbing layer 3 is a wide bandgap perovskite layer, and the second perovskite light absorbing layer 7 is a narrow bandgap perovskite layer. In the embodiment of the present application, a wide bandgap perovskite layer and a narrow bandgap perovskite layer are provided respectively, which is beneficial to light absorption, thereby improving the photoelectric conversion efficiency of the perovskite solar cell stacking assembly.

[0042] In some embodiments, the thickness of the first perovskite light absorbing layer 3 is 400-600 nm (e.g., 400 nm, 450 nm, 500 nm, 550 nm, 600 nm); and / or The thickness of the second perovskite light absorbing layer 7 is 400-600 nm (for example, 400 nm, 450 nm, 500 nm, 550 nm, 600 nm). In the embodiment of the present application, the thickness parameters of each perovskite light absorbing layer are limited, which is beneficial to light absorption, thereby improving the photoelectric conversion efficiency of the perovskite solar cell stack assembly.

[0043] The present application also provides a method for preparing a perovskite solar cell stack assembly, comprising: Scratching a P1a groove on the TCO glass 1 to penetrate the transparent conductive oxide film on the surface of the TCO glass 1; After the P1a groove is provided, a first hole transport layer 2, a first perovskite light absorption layer 3, and a first electron transport layer 4 are sequentially prepared on the TCO glass 1; a P2a groove is engraved on the first electron transport layer 4 to sequentially penetrate the first electron transport layer 4, the first perovskite light absorption layer 3, and the first hole transport layer 2; On the first electron transport layer 4 where the P2a groove has been carved, a first top electrode 5 is prepared; and on the first top electrode 5, a P3a groove penetrating the first top electrode 5 is carved; A second hole transport layer 6, a second perovskite light absorption layer 7, and a second electron transport layer 8 are sequentially prepared on the first top electrode 5 having the P3a groove carved thereon; a P2b groove is carved on the second electron transport layer 8 to sequentially penetrate the second electron transport layer 8, the second perovskite light absorption layer 7, and the second hole transport layer 6; On the second electron transport layer 8 having the P2b groove carved thereon, a second top electrode 9 is prepared; on the second top electrode 9, a P3b groove is carved to sequentially penetrate the second top electrode 9, the second electron transport layer 8, the second perovskite light absorption layer 7, the second hole transport layer 6, and the first top electrode 5; Among them, the perovskite solar cell stack assembly includes the TCO glass 1, the first hole transport layer 2, the first perovskite light absorption layer 3, the first electron transport layer 4, the first top electrode 5, the second hole transport layer 6, the second perovskite light absorption layer 7, the second electron transport layer 8, and the second top electrode 9 stacked in sequence; the P1a groove, P3a groove, P2a groove, P2b groove, and P3b groove satisfy the following conditions: one or more groups of the P1a groove / the P3a groove, the P2a groove, the P2b groove, and the P3b groove are arranged in sequence along the lateral direction of the TCO glass 1; the P2b groove and the P2a groove in the same group serve as conductive channels to electrically connect the second top electrode 9 with the transparent conductive oxide film on the surface of the TCO glass 1.

[0044] In the embodiments of the present application, the preparation route of the perovskite solar cell stack assembly is optimized, which can significantly reduce the thermal impact caused by laser scribing of each groove, improve the overall mechanical stability of the perovskite solar cell stack assembly, and effectively alleviate the leakage loss and short circuit risk caused by the tunneling layer, thereby further improving the photoelectric conversion efficiency of the perovskite solar cell stack assembly.

[0045] In some embodiments, the method for preparing the second perovskite light absorbing layer 7 comprises a doctor blade coating method; the method for preparing the second perovskite light absorbing layer 7 by the doctor blade coating method satisfies at least one of the following characteristics: (1) The thickness of the second perovskite light absorbing layer 7 is 400-600 nm (for example, 400 nm, 450 nm, 500 nm, 550 nm, 600 nm); (2) The thickness of the first top electrode 5 is 205-250 nm (for example, 205 nm, 210 nm, 215 nm, 220 nm, 225 nm, 230 nm, 235 nm, 240 nm, 245 nm, 250 nm).

[0046] In the embodiment of the present application, the thickness of the first top electrode 5 and the second perovskite light absorbing layer 7 is optimized, which is beneficial to the preparation of the second perovskite light absorbing layer 7 and plays a role in further improving the photoelectric conversion efficiency of the perovskite solar cell stack assembly.

[0047] The following specific examples further illustrate the present application, but should not be construed as limiting the present application. Without departing from the spirit and substance of the present application, modifications or replacements made to the methods, steps or conditions of the present application are within the scope of the present application.

[0048] Example 1 like Figure 2 As shown, the perovskite solar cell stack assembly includes a TCO glass 1, a first functional layer, a first top electrode 5, a second functional layer, and a second top electrode 9 stacked in sequence; and two groups of P1a grooves / P3a grooves, P2a grooves, P2b grooves, and P3b grooves arranged in sequence along the lateral direction of the TCO glass 1; wherein the first functional layer includes a first hole transport layer 2, a first perovskite light absorption layer 3, and a first electron transport layer 4 stacked in sequence; the first hole transport layer 2 is arranged on the TCO glass 1 The second functional layer comprises a second hole transport layer 6, a second perovskite light absorbing layer 7, and a second electron transport layer 8 which are stacked in sequence; the second hole transport layer 6 is arranged on the first top electrode 5; that is, the perovskite solar cell stack assembly comprises a TCO glass 1, a first hole transport layer 2, a first perovskite light absorbing layer 3, a first electron transport layer 4, a first top electrode 5, a second hole transport layer 6, a second perovskite light absorbing layer 7, a second electron transport layer 8, and a second top electrode 9 which are stacked in sequence; The P1a groove penetrates the transparent conductive oxide film on the surface of the TCO glass 1; the P2a groove penetrates the first functional layer; the P3a groove penetrates the first top electrode 5; the P2b groove penetrates the second functional layer; the P3b groove sequentially penetrates the second top electrode 9, the second functional layer, and the first top electrode 5; the P2b groove and the P2a groove serve as conductive channels to electrically connect the second top electrode 9 with the transparent conductive oxide film on the surface of the TCO glass 1; The width of the P1a groove is 40μm; the width of the P2a groove is 100μm; the width of the P3a groove is 20μm; the width of the P2b groove is 50μm; the width of the P3b groove is 40μm; the projection spacing between the P2a groove and the P2b groove in the thickness direction is 400μm; the projection spacing between the P2b groove and the P3b groove in the thickness direction is 500μm.

[0049] The specific preparation process of the above-mentioned perovskite solar cell stack assembly is as follows: (1) using a nanosecond infrared laser to scratch a P1a groove on the TCO glass 1 that penetrates the transparent conductive oxide film on the surface of the TCO glass 1; (2) After the P1a groove is provided, 1) a NiOx layer with a thickness of 20 nm is prepared on the TCO glass 1 by PVD technology as a first hole transport layer 2; 2) a first perovskite light absorption layer 3 is deposited on the first hole transport layer 2 by a one-step spin coating method; the band gap of the first perovskite light absorption layer 3 is about 1.85 eV and the thickness is 400 nm; 3) a C layer with a thickness of 20 nm is prepared on the first perovskite light absorption layer 3 by thermal evaporation method 60 layer, using atomic layer deposition on C 60 A SnO layer with a thickness of 10 nm was prepared on the X Layer, C 60 layer, SnO X The layers together constitute a first electron transport layer 4; a picosecond ultraviolet laser is used to carve a P2a groove on the first electron transport layer 4 that sequentially penetrates the first electron transport layer 4, the first perovskite light absorption layer 3, and the first hole transport layer 2; (3) using PVD technology to prepare a first top electrode 5 with a thickness of 205 nm on the first electron transport layer 4 on which the P2a groove has been carved; the material of the first top electrode 5 is ITO; carving a P3a groove penetrating the first top electrode 5 on the first top electrode 5; (4) After the P3a groove is provided, 1) a NiOx layer with a thickness of 20 nm is prepared on the first top electrode 5 as a second hole transport layer 6 by using PVD technology; 2) a second perovskite light absorption layer 7 is deposited on the second hole transport layer 6 by a one-step scraping method; the band gap of the second perovskite light absorption layer 7 is about 1.45 eV and the thickness is 400 nm; 3) a C layer with a thickness of 20 nm is prepared on the second perovskite light absorption layer 7 by using a thermal evaporation method. 60 layer, using atomic layer deposition on C 60 A SnO layer with a thickness of 10 nm was prepared on the X Layer, C 60 layer, SnO XThe layers together constitute the second electron transport layer 8; using a picosecond ultraviolet laser to carve a P2b groove on the second electron transport layer 8 that sequentially penetrates the second electron transport layer 8, the second perovskite light absorption layer 7, and the second hole transport layer 6; (5) A second top electrode 9 with a thickness of 100 nm is prepared on the second electron transport layer 8 on which the P2b groove has been carved by PVD technology; the material of the second top electrode 9 is ITO, and a P3b groove is carved on the second top electrode 9 to sequentially penetrate the second top electrode 9, the second electron transport layer 8, the second perovskite light absorption layer 7, the second hole transport layer 6, and the first top electrode 5.

[0050] Example 2 like Figure 2 As shown, the perovskite solar cell stack assembly includes a TCO glass 1, a first functional layer, a first top electrode 5, a second functional layer, and a second top electrode 9 stacked in sequence; and two groups of P1a grooves / P3a grooves, P2a grooves, P2b grooves, and P3b grooves arranged in sequence along the lateral direction of the TCO glass 1; wherein the first functional layer includes a first hole transport layer 2, a first perovskite light absorption layer 3, and a first electron transport layer 4 stacked in sequence; the first hole transport layer 2 is arranged on the TCO glass 1 The second functional layer comprises a second hole transport layer 6, a second perovskite light absorbing layer 7, and a second electron transport layer 8 which are stacked in sequence; the second hole transport layer 6 is arranged on the first top electrode 5; that is, the perovskite solar cell stack assembly comprises a TCO glass 1, a first hole transport layer 2, a first perovskite light absorbing layer 3, a first electron transport layer 4, a first top electrode 5, a second hole transport layer 6, a second perovskite light absorbing layer 7, a second electron transport layer 8, and a second top electrode 9 which are stacked in sequence; The P1a groove penetrates the transparent conductive oxide film on the surface of the TCO glass 1; the P2a groove penetrates the first functional layer; the P3a groove penetrates the first top electrode 5; the P2b groove penetrates the second functional layer; the P3b groove sequentially penetrates the second top electrode 9, the second functional layer, and the first top electrode 5; the P2b groove and the P2a groove serve as conductive channels to electrically connect the second top electrode 9 with the transparent conductive oxide film on the surface of the TCO glass 1; The width of the P1a groove is 60μm; the width of the P2a groove is 150μm; the width of the P3a groove is 30μm; the width of the P2b groove is 80μm; the width of the P3b groove is 70μm; the projection spacing between the P2a groove and the P2b groove in the thickness direction is 600μm; the projection spacing between the P2b groove and the P3b groove in the thickness direction is 700μm.

[0051] The specific preparation process of the above-mentioned perovskite solar cell stack assembly is as follows: (1) using a nanosecond infrared laser to scratch a P1a groove on the TCO glass 1 that penetrates the transparent conductive oxide film on the surface of the TCO glass 1; (2) After the P1a groove is provided, 1) a NiOx layer with a thickness of 10 nm is prepared on the TCO glass 1 by PVD technology as a first hole transport layer 2; 2) a first perovskite light absorption layer 3 is deposited on the first hole transport layer 2 by a one-step spin coating method; the band gap of the first perovskite light absorption layer 3 is about 1.85 eV and the thickness is 600 nm; 3) a C layer with a thickness of 20 nm is prepared on the first perovskite light absorption layer 3 by thermal evaporation method 60 layer, using atomic layer deposition on C 60 A SnO layer with a thickness of 10 nm was prepared on the X Layer, C 60 layer, SnO X The layers together constitute a first electron transport layer 4; a picosecond ultraviolet laser is used to carve a P2a groove on the first electron transport layer 4 that sequentially penetrates the first electron transport layer 4, the first perovskite light absorption layer 3, and the first hole transport layer 2; (3) using PVD technology to prepare a first top electrode 5 with a thickness of 250 nm on the first electron transport layer 4 on which the P2a groove has been carved; the material of the first top electrode 5 is IZO; carving a P3a groove penetrating the first top electrode 5 on the first top electrode 5; (4) After the P3a groove is provided, 1) a NiOx layer with a thickness of 10 nm is prepared on the first top electrode 5 as a second hole transport layer 6 by using PVD technology; 2) a second perovskite light absorption layer 7 is deposited on the second hole transport layer 6 by a one-step scraping method; the band gap of the second perovskite light absorption layer 7 is about 1.45 eV and the thickness is 600 nm; 3) a C layer with a thickness of 20 nm is prepared on the second perovskite light absorption layer 7 by using a thermal evaporation method 60 layer, using atomic layer deposition on C 60 A SnO layer with a thickness of 10 nm was prepared on the X Layer, C 60 layer, SnO XThe layers together constitute the second electron transport layer 8; using a picosecond ultraviolet laser to carve a P2b groove on the second electron transport layer 8 that sequentially penetrates the second electron transport layer 8, the second perovskite light absorption layer 7, and the second hole transport layer 6; (5) A second top electrode 9 with a thickness of 200 nm is prepared on the second electron transport layer 8 on which the P2b groove has been carved by PVD technology; the material of the second top electrode 9 is IZO, and a P3b groove is carved on the second top electrode 9 to sequentially penetrate the second top electrode 9, the second electron transport layer 8, the second perovskite light absorption layer 7, the second hole transport layer 6, and the first top electrode 5.

[0052] Example 3 The perovskite solar cell stack assembly of Example 3 is prepared by referring to the preparation method of Example 1, with the only difference being that the parameters of the grooves in Example 3 are as follows: the width of the P1a groove is 35 μm; the width of the P2a groove is 90 μm; the width of the P3a groove is 18 μm; the width of the P2b groove is 45 μm; and the width of the P3b groove is 35 μm.

[0053] Example 4 The perovskite solar cell stack assembly of Example 4 is prepared by referring to the preparation method of Example 1, with the only difference being that the parameters of the grooves in Example 4 are as follows: the width of the P1a groove is 70 μm; the width of the P2a groove is 160 μm; the width of the P3a groove is 35 μm; the width of the P2b groove is 90 μm; and the width of the P3b groove is 75 μm.

[0054] Example 5 The perovskite solar cell stack assembly of Example 5 is prepared by referring to the preparation method of Example 1, with the only difference being that the parameters of the grooves in Example 5 are as follows: the projection spacing between the P2a groove and the P2b groove in the thickness direction is 350 μm; the projection spacing between the P2b groove and the P3b groove in the thickness direction is 450 μm.

[0055] Example 6 The perovskite solar cell stack assembly of Example 6 is prepared by referring to the preparation method of Example 1, with the only difference being that the parameters of the grooves in Example 6 are as follows: the projection spacing between the P2a groove and the P2b groove in the thickness direction is 650 μm; the projection spacing between the P2b groove and the P3b groove in the thickness direction is 750 μm.

[0056] Example 7 The perovskite solar cell stack assembly of Example 7 was prepared by referring to the preparation method of Example 1, except that: the thickness of the first top electrode 5 in Example 7 was 150 nm.

[0057] Example 8 The perovskite solar cell stack assembly of Example 8 was prepared by referring to the preparation method of Example 1, except that: the thickness of the first top electrode 5 in Example 8 was 170 nm.

[0058] Example 9 The perovskite solar cell stack assembly of Example 9 was prepared by referring to the preparation method of Example 1, except that: the thickness of the second perovskite light absorbing layer 7 in Example 9 was 350 nm.

[0059] Example 10 The perovskite solar cell stack assembly of Example 10 was prepared by referring to the preparation method of Example 1, except that: the thickness of the second perovskite light absorbing layer 7 in Example 10 was 650 nm.

[0060] Comparative Example 1 A perovskite solar cell stack assembly, comprising a TCO glass 1, a first hole transport layer 2, a first perovskite light absorption layer 3, a first electron transport layer 4, a first top electrode 5, a second hole transport layer 6, a second perovskite light absorption layer 7, a second electron transport layer 8, and a second top electrode 9 stacked in sequence; and two groups of P1 grooves, P2 grooves, and P3 grooves arranged in sequence in the lateral direction of the TCO glass 1; The P1 groove penetrates the transparent conductive oxide film on the surface of the TCO glass 1; The P2 groove penetrates the first hole transport layer 2, the first perovskite light absorption layer 3, the first electron transport layer 4, the first top electrode 5, the second hole transport layer 6, the second perovskite light absorption layer 7, and the second electron transport layer 8; The P3 groove penetrates the second top electrode 9; the P2 groove serves as a conductive channel to electrically connect the second top electrode 9 with the transparent conductive oxide film on the surface of the TCO glass 1; The width of the P1 groove is 40 μm; the width of the P2 groove is 100 μm; the width of the P3 groove is 40 μm; and the projection spacing between the P2 groove and the P3 groove in the thickness direction is 500 μm.

[0061] The method for preparing the perovskite solar cell stack assembly in Comparative Example 1 is different from that in the embodiment only in that the scribing process is different. In Comparative Example 1, only the P1 groove, the P2 groove, and the P3 groove are scribed.

[0062] The perovskite solar cell stack assembly prepared in the above embodiment was subjected to photoelectric testing, and the test results are shown in Table 1 below.

[0063] Table 1 Device performance data

[0064] Referring to the above test data, it can be seen that one or more groups of P1a grooves / P3a grooves, P2a grooves, P2b grooves, and P3b grooves are arranged in sequence along the lateral direction of the TCO glass 1, and the P2b grooves and P2a grooves are used as conductive channels to electrically connect the second top electrode 9 with the transparent conductive oxide film on the surface of the TCO glass 1. The grooves are reasonably arranged, and the heat effect caused by laser scribing of the grooves can be greatly reduced, thereby improving the overall mechanical stability of the perovskite solar cell stack assembly, and can also The leakage loss and short circuit risk caused by the tunneling layer (the first top electrode 5 is the tunneling layer) are effectively alleviated, and the photoelectric conversion efficiency of the perovskite solar cell stacking assembly is improved; and when the tunneling layer is thickened and the insulating material is not filled in the P2b groove and the P2a groove, the leakage loss and short circuit risk caused by the tunneling layer can still be effectively alleviated. The thickened tunneling layer is conducive to the preparation of the light absorption layer (such as the perovskite light absorption layer) stacked above the tunneling layer, thereby further improving the photoelectric conversion efficiency of the perovskite solar cell stacking assembly.

[0065] In the above comparative example 1, the grooves are arranged according to the conventional method, and the P2 groove directly penetrates the first hole transport layer 2, the first perovskite light absorption layer 3, the first electron transport layer 4, the first top electrode 5, the second hole transport layer 6, the second perovskite light absorption layer 7, and the second electron transport layer 8. Laser scribing of the P2 groove will generate a large amount of heat, which is not conducive to the overall mechanical stability of the perovskite solar cell stack assembly; under this structure, it is also impossible to alleviate the leakage loss and short circuit risk caused by the tunneling layer (the first top electrode 5 is the tunneling layer), thereby affecting the photoelectric conversion efficiency of the perovskite solar cell stack assembly.

[0066] Referring to the detection data of the above-mentioned Example 1 and Examples 3-4, it can be seen that optimizing the widths of the P1a groove, P3a groove, P2a groove, P2b groove, and P3b groove can make the current distribution in the series-connected cells more uniform, thereby improving the photoelectric conversion efficiency of the perovskite solar cell stack assembly.

[0067] Referring to the detection data of the above-mentioned Example 1 and Examples 5-6, it can be seen that optimizing the parameters of the projection spacing of the P2a groove, the P2b groove, and the P3b groove can make the current distribution in the series-connected cells more uniform, thereby improving the photoelectric conversion efficiency of the perovskite solar cell stack assembly.

[0068] Referring to the detection data of the above-mentioned Example 1 and Examples 7-8, it can be known that optimizing the thickness of the first top electrode 5 can effectively alleviate the leakage loss and short circuit risk caused by the tunneling layer (the first top electrode 5 is the tunneling layer), and improve the photoelectric conversion efficiency of the perovskite solar cell stack assembly; it is also beneficial to the preparation of the light absorption layer (such as the perovskite light absorption layer) stacked above the tunneling layer, thereby further improving the photoelectric conversion efficiency of the perovskite solar cell stack assembly.

[0069] Referring to the detection data of the above-mentioned Example 1 and Examples 9-10, it can be known that limiting the thickness parameters of each perovskite light absorption layer is beneficial to light absorption, thereby improving the photoelectric conversion efficiency of the perovskite solar cell stack assembly.

[0070] In addition, it should be noted that Figure 2 The red arrow in the figure indicates the direction of current flow; Figure 1 It represents a perovskite solar cell stacking component in which two sub-cells (each sub-cell has two upper and lower sections) are connected by a group of P1a grooves / P3a grooves, P2a grooves, P2b grooves, and P3b grooves arranged in sequence; Figure 2 It shows a stacked perovskite solar cell assembly with multiple subcells connected. Figure 2 It can be seen that by providing a plurality of groups of P1a grooves / P3a grooves, P2a grooves, P2b grooves, and P3b grooves arranged in sequence along the lateral direction of the TCO glass 1 , adjacent sub-cells can be connected in series.

[0071] The embodiment of the present application can provide a photovoltaic system, including the perovskite solar cell stack assembly described in any of the above embodiments. The advantages of the above perovskite solar cell stack assembly are also possessed by the photovoltaic system, which will not be repeated here. The above photovoltaic system has a wide range of applications, not only limited to photovoltaic power stations, such as ground power stations, rooftop power stations and water power stations, but also includes various equipment and devices that use solar energy to generate electricity, such as user solar power supplies, solar street lights, solar cars and solar buildings. Of course, it can be understood that the application scenarios of the photovoltaic system are not limited to this, that is to say, the photovoltaic system can be used in all fields where solar energy is required for power generation. Taking the photovoltaic power generation system network as an example, the photovoltaic system may include a photovoltaic array, a junction box and an inverter. The photovoltaic array may be an array combination of multiple photovoltaic components. For example, multiple photovoltaic components may form multiple photovoltaic arrays. The photovoltaic array is connected to the junction box, and the junction box can converge the current generated by the photovoltaic array. The converged current flows through the inverter and is converted into the alternating current required by the mains power grid, and then connected to the mains network to realize solar power supply.

[0072] It should be noted that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise", "axial", "radial", "circumferential", etc. are only for the convenience of describing the present application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the present application. The orientation words "inside" and "outside" refer to the inside and outside relative to the outline of each component itself. For example, if the device in the accompanying drawings is inverted, the device described as "above other devices or structures" or "above other devices or structures" will be positioned as "below other devices or structures" or "below other devices or structures". Therefore, the exemplary term "above..." can include both "above..." and "below..." orientations. The device can also be positioned in other different ways (rotated 90 degrees or in other orientations), and the spatial relative descriptions used here are interpreted accordingly.

[0073] It should also be noted that "one embodiment", "another embodiment", "embodiment", etc. mentioned in this application refer to the specific features, structures or characteristics described in conjunction with the embodiment included in at least one embodiment generally described in this application. The same expression appearing in multiple places in the specification does not necessarily refer to the same embodiment. Further, when describing a specific feature, structure or characteristic in conjunction with any embodiment, it is claimed that the realization of such feature, structure or characteristic in conjunction with other embodiments also falls within the scope of this application.

[0074] In the above embodiments, the description of each embodiment has its own emphasis. For parts that are not described in detail in a certain embodiment, reference can be made to the relevant descriptions of other embodiments.

[0075] It should also be noted that the above are only preferred embodiments of the present application, and the patent protection scope of the present application is not limited thereto. Any equivalent structure or equivalent process transformation made using the contents of the present application specification and drawings, or directly or indirectly used in other related technical fields, are also included in the patent protection scope of the present application.

Claims

1. A perovskite solar cell stack assembly, characterized in that: It comprises a TCO glass, a first functional layer, a first top electrode, a second functional layer, and a second top electrode stacked in sequence; one or more groups of P1a grooves / P3a grooves, P2a grooves, P2b grooves, and P3b grooves are arranged in sequence along the lateral direction of the TCO glass; Among them, the P1a groove penetrates the transparent conductive oxide film on the surface of the TCO glass; the P2a groove penetrates the first functional layer; the P3a groove penetrates the first top electrode; the P2b groove penetrates the second functional layer; the P3b groove sequentially penetrates the second top electrode, the second functional layer, and the first top electrode; the P2b groove and the P2a groove in the same group serve as conductive channels to electrically connect the second top electrode with the transparent conductive oxide film on the surface of the TCO glass.

2. The perovskite solar cell stack assembly according to claim 1, characterized in that: The material of the first top electrode includes one or more of ITO, IZO, IWO, FTO, ICO, AZO, and BZO; the thickness of the first top electrode is 205-250 nm; and / or The material of the second top electrode includes one or more of ITO, IZO, IWO, FTO, ICO, AZO, and BZO; the thickness of the second top electrode is 100-200 nm.

3. The perovskite solar cell stack assembly according to claim 1, characterized in that: The width of the P1a groove is 40-60 μm; and / or The width of the P2a groove is 100-150 μm; and / or The width of the P3a groove is 20-30 μm; and / or The width of the P2b groove is 50-80 μm; and / or The width of the P3b groove is 40-70 μm.

4. The perovskite solar cell stack assembly according to claim 1, characterized in that: The projection spacing between the P2a groove and the P2b groove in the thickness direction is 400-600 μm; and / or The projection distance between the P2b groove and the P3b groove in the thickness direction is 500-700 μm.

5. The perovskite solar cell stack assembly according to claim 1, characterized in that: The first functional layer comprises a first hole transport layer, a first perovskite light absorption layer, and a first electron transport layer stacked in sequence; wherein the first hole transport layer is disposed on the transparent conductive oxide film of the TCO glass; and / or The second functional layer includes a second hole transport layer, a second perovskite light absorption layer, and a second electron transport layer stacked in sequence; wherein the second hole transport layer is arranged on the first top electrode.

6. The perovskite solar cell stack assembly according to claim 5, characterized in that: The first perovskite light absorbing layer is a wide bandgap perovskite layer, and the second perovskite light absorbing layer is a narrow bandgap perovskite layer.

7. The perovskite solar cell stack assembly according to any one of claims 5 or 6, characterized in that: The thickness of the first perovskite light absorbing layer is 400-600 nm; and / or The thickness of the second perovskite light absorbing layer is 400-600 nm.

8. A method for preparing a perovskite solar cell stack assembly, characterized in that: include: Scribing a P1a groove on the TCO glass that penetrates the transparent conductive oxide film on the surface of the TCO glass; After the P1a groove is provided, a first hole transport layer, a first perovskite light absorption layer, and a first electron transport layer are sequentially prepared on the TCO glass; a P2a groove is engraved on the first electron transport layer to sequentially penetrate the first electron transport layer, the first perovskite light absorption layer, and the first hole transport layer; On the first electron transport layer where the P2a groove has been carved, a first top electrode is prepared; on the first top electrode, a P3a groove is carved to penetrate the first top electrode; Sequentially preparing a second hole transport layer, a second perovskite light absorption layer, and a second electron transport layer on the first top electrode having the P3a groove carved therein; Carve a P2b groove on the second electron transport layer that sequentially penetrates the second electron transport layer, the second perovskite light absorption layer, and the second hole transport layer; On the second electron transport layer having the P2b groove carved thereon, a second top electrode is prepared; on the second top electrode, a P3b groove is carved to sequentially penetrate the second top electrode, the second electron transport layer, the second perovskite light absorption layer, the second hole transport layer, and the first top electrode; Wherein, the perovskite solar cell stack assembly comprises the TCO glass, the first hole transport layer, the first perovskite light absorption layer, the first electron transport layer, the first top electrode, the second hole transport layer, the second perovskite light absorption layer, the second electron transport layer, and the second top electrode stacked in sequence; the P1a groove, the P3a groove, the P2a groove, the P2b groove, and the P3b groove satisfy the following conditions: one or more groups of the P1a groove / the P3a groove, the P2a groove, the P2b groove, and the P3b groove are arranged in sequence along the lateral direction of the TCO glass; The P2b groove and the P2a groove in the same group serve as conductive channels to electrically connect the second top electrode with the transparent conductive oxide film on the surface of the TCO glass.

9. The method for preparing a perovskite solar cell stack assembly according to claim 8, characterized in that: The method for preparing the second perovskite light absorbing layer comprises a doctor blade coating method; the method for preparing the second perovskite light absorbing layer by the doctor blade coating method satisfies at least one of the following characteristics: (1) The thickness of the second perovskite light absorbing layer is 400-600 nm; (2) The thickness of the first top electrode is 205-250 nm.

10. A photovoltaic system, characterized in that: include: The perovskite solar cell stack assembly according to any one of claims 1 to 7; or A perovskite solar cell stack assembly prepared by the preparation method according to any one of claims 8 to 9.

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