Cleaning method for preventing oxidation of high-purity copper target material after sand blasting

Abstract

The invention provides an anti-oxidation cleaning method for a high-purity copper target after sand blasting. The cleaning method comprises the following steps: cleaning a non-sputtering surface of the high-purity copper target after sand blasting; and then a sodium fluoride solution is adopted for wiping and cleaning, and the cleaned target material is obtained after drying treatment. According to the method, the surface of the target material is subjected to cleaning treatment and sodium fluoride wiping treatment, so that the sand blasting surface of the target material can be effectively prevented from being oxidized, and the yield of target material production is increased; the method has the advantages of simple operation, fast processing speed, low cost and wide application prospect.

Description

Technical Field

[0001] The invention belongs to the technical field of target material preparation, and relates to a cleaning method for high-purity copper, in particular to a cleaning method for anti-oxidation of a high-purity copper target material after sandblasting. Background Art

[0002] With the rapid development of the semiconductor industry, the demand for coating materials, as an important material for the manufacture of semiconductor electronic devices, is also increasing. Target materials, as an important coating material, are widely used in integrated circuits, flat panel displays, solar energy, optical devices and other fields. The main preparation method is physical vapor deposition (PVD), which mainly includes sputtering coating, vacuum evaporation, plasma coating, etc., among which sputtering coating is the most commonly used.

[0003] Since the target material is generally not used alone in the sputtering coating process, but in the form of a target assembly, the target assembly is usually composed of a target material and a back plate through welding. In order to improve the welding strength, the target material and the back plate need to be processed in advance on the surface to be welded. Among them, the commonly used method is sandblasting to improve its surface roughness. However, due to the characteristics of the sandblasted surface, there will often be cleaning liquid residue on the sandblasted surface after cleaning, and it is easy to oxidize during the drying process, affecting the apparent performance and subsequent use of the target material, resulting in an increase in the defective rate of the target material product. In particular, high-purity copper targets are easily oxidized in the air, affecting the quality of the sputtered film and the service life of the target material.

[0004] CN 107413715A discloses a method for cleaning a target material, which uses a high-pressure cleaning process to spray a cleaning liquid on the target material. The high-pressure cleaning uses a high-pressure gas as a carrier, and the pressure of the high-pressure gas is 6-8MP. During the cleaning process of this method, the cleaning liquid needs to be sprayed under the action of the high-pressure gas. The consumption of the gas and the cleaning liquid is too large, and a large amount of organic wastewater is easily generated, which is not conducive to the subsequent recovery and treatment of the cleaning liquid. CN 110670083A discloses a method for cleaning a target material, which includes the following steps: coating a cleaning agent on the surface of the target material, and then scrubbing it; ultrasonically cleaning the scrubbed target material; using an inert gas to blow dry the moisture on the surface of the target material after ultrasonic cleaning, and then vacuum drying it to obtain a cleaned target material. CN 112959224A discloses a method for preventing oxidation of a target material after sandblasting, the method comprising the following steps: (1) sandblasting the non-sputtering surface of the target material to obtain a sandblasting target material; (2) cleaning the sandblasting target material obtained in step (1), and then blowing and drying it with compressed gas to obtain a target material with a dry sandblasted surface.

[0005] The methods provided in the above patents all disclose how to clean the target material, but do not disclose that the target material has a long-term anti-oxidation performance after cleaning. Therefore, it is necessary to provide a cleaning method that is simple to operate and can provide the target material with a long-lasting anti-oxidation performance. Summary of the invention

[0006] In view of the shortcomings of the prior art, the present invention aims to provide a cleaning method for preventing oxidation of high-purity copper targets after sandblasting. The cleaning method generates less waste liquid, which is conducive to reducing the pressure of waste liquid treatment; and can effectively improve the durability of the anti-oxidation performance of pure copper targets.

[0007] To achieve this object, the present invention adopts the following technical solutions:

[0008] The present invention provides a cleaning method for preventing oxidation of a high-purity copper target after sandblasting, the cleaning method comprising the following steps:

[0009] The non-sputtering surface of the high-purity copper target after sandblasting is cleaned; then, a sodium fluoride solution is used for wiping and cleaning, and a cleaned target is obtained after drying.

[0010] The present invention can remove dust or other impurities attached to the surface of the target material during the sandblasting process by using a cleaning process, and then form a nano protective film on the surface of the target material by wiping with a sodium fluoride solution, thereby achieving a cleaning process for the high-purity copper target material and improving the durability of the anti-oxidation performance of the high-purity copper target material.

[0011] As a preferred technical solution of the present invention, the purity of the high-purity copper target material is ≥4N, for example, it can be 4N, 5N or 6N, but it is not limited to the listed values, and other values ​​not listed within the numerical range are also applicable.

[0012] As a preferred technical solution of the present invention, the cleaning treatment includes ultrasonic cleaning or wiping treatment using a detergent, preferably wiping treatment.

[0013] Preferably, the cleaning agent comprises any one of acetone solution, isopropanol solution or anhydrous ethanol, or a combination of at least two thereof. Typical but not limited combinations include: a combination of acetone solution and isopropanol solution, a combination of acetone solution and anhydrous ethanol, a combination of isopropanol solution and anhydrous ethanol, or a combination of acetone solution, isopropanol solution and anhydrous ethanol; preferably an isopropanol solution.

[0014] Preferably, the purity of the cleaning agent is ≥95wt%, for example, it can be 95wt%, 96wt%, 97wt%, 98wt% or 99wt%, but is not limited to the listed values, and other values ​​not listed within the numerical range are also applicable.

[0015] As a preferred technical solution of the present invention, the power of the ultrasonic cleaning is 1500-2500W, for example, it can be 1500W, 1700W, 1900W, 2100W, 2300W or 2500W, but is not limited to the listed values, and other values ​​not listed within the numerical range are also applicable.

[0016] Preferably, the temperature of the ultrasonic cleaning is 15-30°C, for example, 15°C, 18°C, 21°C, 24°C, 27°C or 30°C, but is not limited to the listed values, and other values ​​not listed within the numerical range are also applicable.

[0017] Preferably, the ultrasonic cleaning time is 10 to 20 minutes, for example, 10 minutes, 12 minutes, 14 minutes, 16 minutes, 18 minutes or 20 minutes, but is not limited to the listed values, and other values ​​not listed within the numerical range are also applicable.

[0018] As a preferred technical solution of the present invention, the wiping process includes using a first cleaning tool to dip in a cleaning agent and then wiping repeatedly.

[0019] Preferably, the first cleaning tool comprises a scouring pad and / or a scrubbing sponge.

[0020] Preferably, the mesh number of the first cleaning tool is 100-150 meshes, for example, it can be 100 mesh, 110 mesh, 120 mesh, 130 mesh, 140 mesh or 150 mesh, but is not limited to the listed values, and other values ​​not listed within the numerical range are also applicable.

[0021] Preferably, the wiping and cleaning time is 25 to 40 minutes, for example, 25 minutes, 28 minutes, 31 minutes, 34 minutes, 37 minutes or 40 minutes, but is not limited to the listed values, and other values ​​not listed within the numerical range are also applicable.

[0022] In the present invention, the time for wiping the surface of the copper target material with a cleaning tool is 25 to 40 minutes. If the wiping time is too long, the product will be oxidized during the wiping process. If the wiping time is too short, the protective layer will be uneven.

[0023] As a preferred technical solution of the present invention, raw materials for preparing the sodium fluoride solution include sodium fluoride and water.

[0024] Preferably, the mass ratio of sodium fluoride to water is 1:5-15, for example, 1:5, 1:7, 1:9, 1:11, 1:13 or 1:15, but is not limited to the listed values, and other values ​​not listed within the numerical range are also applicable.

[0025] In the present invention, the sodium fluoride solution is used to wipe the surface of the target material, and a nano protective film can be formed on the surface of the target material; if the amount of sodium fluoride added in the sodium fluoride solution is too high or too low, it will make it difficult to form a nano protective film on the product surface.

[0026] As a preferred technical solution of the present invention, the wiping cleaning includes using a second cleaning tool to dip into a sodium fluoride solution and then wiping repeatedly.

[0027] Preferably, the two cleaning tools include a scouring pad and / or a scrubbing sponge.

[0028] Preferably, the mesh size of the two cleaning tools is 200-250 meshes, for example, 200 meshes, 210 meshes, 220 meshes, 230 meshes, 240 meshes or 250 meshes, but is not limited to the listed values, and other values ​​not listed within the numerical range are also applicable.

[0029] Preferably, the wiping cleaning time is 5 to 10 minutes, for example, 5 minutes, 6 minutes, 7 minutes, 8 minutes, 9 minutes or 10 minutes, but is not limited to the listed values, and other values ​​not listed within the numerical range are also applicable.

[0030] In the present invention, the time for wiping and cleaning with sodium fluoride solution is 5 to 10 minutes. If the time is too long, the protective layer that has been formed will be damaged and the anti-oxidation effect will not be achieved. If the time is too short, the protective layer will be uneven.

[0031] As a preferred technical solution of the present invention, the drying process includes purge drying or static drying.

[0032] Preferably, the drying temperature is 20-30°C, for example, 20°C, 22°C, 24°C, 26°C, 28°C or 30°C, but is not limited to the listed values, and other values ​​not listed within the numerical range are also applicable.

[0033] As a preferred technical solution of the present invention, the purging and drying time is 40 to 90 seconds, for example, it can be 40 seconds, 50 seconds, 60 seconds, 70 seconds, 80 seconds or 90 seconds, but is not limited to the listed values, and other values ​​not listed within the numerical range are also applicable.

[0034] Preferably, the gas used in the purge drying includes any one of nitrogen, inert gas or air.

[0035] Preferably, the static drying time is 2 to 3 minutes, for example, 2 minutes, 2.2 minutes, 2.4 minutes, 2.6 minutes, 2.8 minutes or 3 minutes, but is not limited to the listed values, and other values ​​not listed within the numerical range are also applicable.

[0036] As a preferred technical solution of the present invention, the cleaning method for anti-oxidation of high-purity copper target after sandblasting provided by the present invention comprises the following steps:

[0037] (1) Cleaning the non-sputtering surface of the high-purity copper target with a purity of ≥4N after sandblasting;

[0038] The cleaning process includes ultrasonic cleaning or wiping using a cleaning agent with a purity of ≥95wt%;

[0039] The power of the ultrasonic cleaning is 1500-2500W, the temperature is 15-30°C, and the time is 10-20min;

[0040] The wiping treatment includes using a first cleaning tool to dip in a cleaning agent, and then wiping repeatedly for 25 to 40 minutes; the mesh size of the first cleaning tool is 100 to 150 meshes;

[0041] (2) wiping and cleaning the high-purity copper target after the cleaning treatment in step (1) with a sodium fluoride solution, and obtaining a cleaned target after drying;

[0042] The raw materials for preparing the sodium fluoride solution include sodium fluoride and water in a mass ratio of 1:5 to 15; the wiping cleaning includes using a second cleaning tool to dip into the sodium fluoride solution, and then wiping repeatedly for 5 to 10 minutes;

[0043] The drying treatment includes purge drying or static drying at a temperature of 20 to 30° C.; the purge drying time is 40 to 90 seconds; and the static drying time is 2 to 3 minutes.

[0044] The following are preferred technical solutions of the present invention, but are not intended to limit the technical solutions provided by the present invention. Through the following preferred technical solutions, the objectives and beneficial effects of the present invention can be better achieved and realized.

[0045] Compared with the prior art, the present invention has the following beneficial effects:

[0046] (1) The cleaning method provided by the present invention does not require the use of a high-pressure water gun to clean the target material. The cleaning method is simple and the consumption of the cleaning agent is low. The amount of waste liquid generated is small, which is conducive to reducing the pressure of waste liquid treatment;

[0047] (2) The cleaning method provided by the present invention uses sodium fluoride solution for wiping and cleaning, has a fast drying rate, and has no liquid residue. It can effectively prevent the oxidation of high-purity copper target materials, prolong their anti-oxidation time, and solve the abnormal oxidation of high-purity copper target materials on the client side. DETAILED DESCRIPTION

[0048] For the convenience of understanding the present invention, the present invention lists the following embodiments. It should be understood by those skilled in the art that the embodiments are only to help understand the present invention and should not be regarded as specific limitations of the present invention.

[0049] Example 1

[0050] This embodiment provides a cleaning method for preventing oxidation of a high-purity copper target after sandblasting, and the cleaning method comprises the following steps:

[0051] (1) Cleaning the non-sputtering surface of a high-purity copper target having a purity of 99.995% after sandblasting;

[0052] The cleaning process includes wiping with a cleaning agent having a purity of ≥95wt%;

[0053] The wiping treatment includes: using a scouring pad to dip in an isopropyl alcohol solution with a purity of 96wt%, and then wiping repeatedly for 30 minutes; the mesh number of the scouring pad is 150 meshes;

[0054] (2) using a sodium fluoride solution to wipe and clean the high-purity copper target after the cleaning treatment in step (1), and obtaining a cleaned target after drying;

[0055] The raw materials for preparing the sodium fluoride solution include sodium fluoride and water in a mass ratio of 1:10; the wiping cleaning includes using a 250-mesh taclin sponge to dip into the sodium fluoride solution, and then wiping repeatedly for 8 minutes;

[0056] The drying process includes standing and drying at a temperature of 25° C.; the standing and drying time is 2.5 minutes.

[0057] Example 2

[0058] This embodiment provides a cleaning method for preventing oxidation of a high-purity copper target after sandblasting, and the cleaning method comprises the following steps:

[0059] (1) Cleaning the non-sputtering surface of a high-purity copper target with a purity of 99.999% after sandblasting;

[0060] The cleaning process includes wiping with an acetone solution having a purity of 96 wt %;

[0061] The wiping treatment includes using a taclin sponge to dip in a cleaning agent, and then wiping repeatedly for 25 minutes; the mesh number of the taclin sponge is 100 meshes;

[0062] (2) wiping and cleaning the high-purity copper target after the cleaning treatment in step (1) with a sodium fluoride solution, and obtaining a cleaned target after drying;

[0063] The raw materials for preparing the sodium fluoride solution include sodium fluoride and water in a mass ratio of 1:5; the wiping cleaning includes using a scouring pad with a mesh number of 200 to dip into the sodium fluoride solution, and then wiping repeatedly for 10 minutes;

[0064] The drying process includes purge drying at a temperature of 20° C.; the purge drying time is 60 seconds.

[0065] Example 3

[0066] This embodiment provides a cleaning method for preventing oxidation of a high-purity copper target after sandblasting, and the cleaning method comprises the following steps:

[0067] (1) Cleaning the non-sputtering surface of a high-purity copper target having a purity of 99.998% after sandblasting;

[0068] The cleaning process includes ultrasonic cleaning using anhydrous alcohol with a purity of 95wt%;

[0069] The ultrasonic cleaning was performed at a power of 2000 W, a temperature of 22° C., and a time of 15 min.

[0070] (2) wiping and cleaning the high-purity copper target after the cleaning treatment in step (1) with a sodium fluoride solution, and obtaining a cleaned target after drying;

[0071] The raw materials for preparing the sodium fluoride solution include sodium fluoride and water in a mass ratio of 1:15; the wiping cleaning includes using a scouring pad with a mesh number of 200 to dip into the sodium fluoride solution, and then wiping repeatedly for 5 minutes;

[0072] The drying process includes standing and drying at a temperature of 30° C.; the standing and drying time is 2 minutes.

[0073] Example 4

[0074] This embodiment provides a cleaning method for preventing oxidation of a high-purity copper target after sandblasting, and the cleaning method comprises the following steps:

[0075] (1) Cleaning the non-sputtering surface of a high-purity copper target having a purity of 99.998% after sandblasting;

[0076] The cleaning process includes wiping with a cleaning agent having a purity of 98 wt %;

[0077] The wiping treatment includes using a scouring pad to dip in a cleaning agent and then wiping repeatedly for 40 minutes; the mesh number of the scouring pad is 120 meshes;

[0078] (2) wiping and cleaning the high-purity copper target after the cleaning treatment in step (1) with a sodium fluoride solution, and obtaining a cleaned target after drying;

[0079] The raw materials for preparing the sodium fluoride solution include sodium fluoride and water in a mass ratio of 1:8; the wiping cleaning includes using a 220-mesh taclin sponge to dip into the sodium fluoride solution, and then wiping repeatedly for 6 minutes;

[0080] The drying process includes purge drying at a temperature of 20° C.; the purge drying time is 90 seconds.

[0081] Example 5

[0082] This embodiment provides a cleaning method for preventing oxidation of a high-purity copper target after sandblasting. The cleaning method is different from that of Embodiment 1 only in that:

[0083] In this embodiment, the wiping time in step (1) is adjusted to 20 minutes.

[0084] Example 6

[0085] This embodiment provides a cleaning method for preventing oxidation of a high-purity copper target after sandblasting. The cleaning method is different from that of Embodiment 1 only in that:

[0086] In this embodiment, the wiping time in step (1) is adjusted to 50 minutes.

[0087] Example 7

[0088] This embodiment provides a cleaning method for preventing oxidation of a high-purity copper target after sandblasting. The cleaning method is different from that of Embodiment 1 only in that:

[0089] In this embodiment, the wiping treatment in step (1) is adjusted as follows: spraying the isopropyl ketone solution on the surface of the high-purity target material, and then repeatedly wiping it with a scouring pad with a mesh size of 150.

[0090] Example 8

[0091] This embodiment provides a cleaning method for preventing oxidation of a high-purity copper target after sandblasting. The cleaning method is different from that of Embodiment 1 only in that:

[0092] In this embodiment, the mass ratio of sodium fluoride to water in the raw materials for preparing the sodium fluoride solution in step (2) is adjusted to 1:3.

[0093] Example 9

[0094] This embodiment provides a cleaning method for preventing oxidation of a high-purity copper target after sandblasting. The cleaning method is different from that of Embodiment 1 only in that:

[0095] In this embodiment, the mass ratio of sodium fluoride to water in the raw materials for preparing the sodium fluoride solution in step (2) is adjusted to 1:20.

[0096] Example 10

[0097] This embodiment provides a cleaning method for preventing oxidation of a high-purity copper target after sandblasting. The cleaning method is different from that of Embodiment 1 only in that:

[0098] In this embodiment, the wiping cleaning in step (2) is adjusted as follows: the sodium fluoride solution is sprayed onto the surface of the target material, and then the target material is repeatedly wiped with a Taclink sponge.

[0099] Comparative Example 1

[0100] This comparative example provides a cleaning method for anti-oxidation of a high-purity copper target after sandblasting. The cleaning method is different from that of Example 1 only in that:

[0101] In this comparative example, clean water rinsing was performed before the cleaning process in step (1).

[0102] Comparative Example 2

[0103] This comparative example provides a cleaning method for preventing oxidation of a high-purity copper target after sandblasting, and the cleaning method comprises the following steps:

[0104] (1) Cleaning the non-sputtering surface of a high-purity copper target having a purity of 99.995% after sandblasting;

[0105] The cleaning process includes wiping with a cleaning agent having a purity of ≥95wt%;

[0106] The wiping treatment includes: using a scouring pad to dip in an isopropyl alcohol solution with a purity of 96wt%, and then wiping repeatedly for 30 minutes; the mesh number of the scouring pad is 150 meshes;

[0107] (2) Using compressed air to purge and dry the high-purity copper target material after the cleaning treatment in step (1); the pressure of the compressed air is 0.5 MPa, the temperature of the purge and drying is 80° C., and the time is 90 seconds to obtain a cleaned target material.

[0108] Performance testing:

[0109] (1) The cleaned targets provided in the above embodiments and comparative examples were stored under normal temperature and pressure and under vacuum, and their effective storage time was recorded. The results are shown in Table 1.

[0110] The effective storage time is the time when the target materials provided in the above embodiments and comparative examples begin to oxidize;

[0111] (2) The target materials provided in the above-mentioned embodiments and comparative examples were subjected to welding treatment, and the production qualification rates thereof are shown in Table 1.

[0112] Table 1

[0113]

[0114] According to Table 1, we can know the following points:

[0115] (1) Comprehensive analysis of Examples 1-4 shows that the method provided by the present invention can effectively prevent the oxidation of high-purity copper target materials. At room temperature and pressure, its anti-oxidation time can be as long as 10 days; under vacuum conditions, its anti-oxidation time can be as long as half a year, effectively solving the abnormal oxidation of high-purity copper target materials on the client side; and effectively improving the production qualification rate of target materials;

[0116] (2) Comprehensive analysis of Example 1 and Examples 5-7 shows that the use of a cleaning agent for wiping can quickly remove some impurities on the surface of the target material. If the wiping time is too long, oxidation may occur on the surface of the product during the wiping process. If the wiping time is too short, it cannot be guaranteed that the stains on the surface of the product are cleaned.

[0117] When the cleaning agent is sprayed onto the surface of the target and then wiped, the spraying will be uneven, making the surface of the target uneven after wiping, and the uniformity of sandblasting cannot be guaranteed, resulting in a decrease in the protective effect;

[0118] (3) Comprehensive analysis of Example 1 and Examples 8-9 shows that if the sodium fluoride content in the wiping and cleaning process in step (2) is too high, the protective film formed on the target surface will be too thick, which will cause quality problems for the target on the machine and prolong the pre-sputtering time. If the sodium fluoride content is too low, it will take a long time to form a protective layer on the target surface, thereby increasing the time cost and reducing the protective effect.

[0119] (4) Comprehensive analysis of Example 1 and Example 10 shows that when the sodium fluoride solution is sprayed onto the surface of the target material for wiping, the sodium fluoride solution is easily volatile and it is difficult to form a protective film on the surface of the target material, and the purpose of prolonging the anti-oxidation period cannot be achieved;

[0120] (5) Comprehensive analysis of Example 1 and Comparative Example 1 shows that water treatment will accelerate the oxidation of the high-purity copper target and cannot achieve the purpose of extending the anti-oxidation period;

[0121] (6) Comprehensive analysis of Example 1 and Comparative Example 2 shows that omitting the wiping and cleaning with the sodium fluoride solution in step (2) fails to form a protective layer on the surface of the target material, and thus fails to achieve anti-oxidation treatment of the target material, which may lead to the risk of oxidation of the product at the client end.

[0122] In summary, the cleaning method provided by the present invention can effectively prevent the oxidation of the sandblasted surface of the target material by cleaning the surface of the target material and wiping it with sodium fluoride, thereby improving the qualified rate of target material production and solving the abnormal oxidation of high-purity copper target material on the client side; and the cleaning agent consumption of the method is low, and the amount of waste liquid generated is small, which is conducive to reducing the pressure of waste liquid treatment.

[0123] The specific embodiments described above further illustrate the objectives, technical solutions and beneficial effects of the present invention in detail. It should be understood that the above description is only a specific embodiment of the present invention and is not intended to limit the present invention. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the present invention should be included in the protection scope of the present invention.

Claims

1. A cleaning method for preventing oxidation of a high-purity copper target after sandblasting, characterized in that: The cleaning method comprises the following steps: The non-sputtering surface of the high-purity copper target after sandblasting is cleaned; then, a sodium fluoride solution is used for wiping and cleaning, and a cleaned target is obtained after drying.

2. The cleaning method according to claim 1, characterized in that: The purity of the high-purity copper target material is ≥4N.

3. The cleaning method according to claim 1 or 2, characterized in that: The cleaning process includes ultrasonic cleaning or wiping with a cleaning agent; Preferably, the cleaning agent comprises any one of acetone solution, isopropanol solution or anhydrous ethanol, or a combination of at least two thereof, preferably isopropanol solution; Preferably, the purity of the cleaning agent is ≥ 95 wt %.

4. The cleaning method according to claim 3, characterized in that: The power of the ultrasonic cleaning is 1500-2500W; Preferably, the temperature of the ultrasonic cleaning is 15 to 30°C; Preferably, the ultrasonic cleaning time is 10 to 20 minutes.

5. The cleaning method according to claim 3, characterized in that: The wiping process includes using a first cleaning tool to dip into a cleaning agent and then wiping repeatedly; Preferably, the first cleaning tool comprises a scouring pad and / or a scrubbing sponge; Preferably, the mesh number of the first cleaning tool is 100-150 mesh; Preferably, the wiping and cleaning time is 25 to 40 minutes.

6. The cleaning method according to any one of claims 1 to 5, characterized in that: The raw materials for preparing the sodium fluoride solution include sodium fluoride and water; Preferably, the mass ratio of sodium fluoride to water is 1:5-15.

7. The cleaning method according to any one of claims 1 to 6, characterized in that: The wiping cleaning comprises using a second cleaning tool to dip into a sodium fluoride solution and then wiping repeatedly; Preferably, the two cleaning tools include a scouring pad and / or a scrubbing sponge; Preferably, the mesh size of the two cleaning tools is 200-250 mesh; Preferably, the wiping cleaning time is 5 to 10 minutes.

8. The cleaning method according to any one of claims 1 to 7, characterized in that: The drying process includes purge drying or static drying; Preferably, the drying temperature is 20-30°C.

9. The cleaning method according to claim 8, characterized in that: The purge drying time is 40 to 90 seconds; Preferably, the gas used in the purge drying includes any one of nitrogen, inert gas or air; Preferably, the static drying time is 2 to 3 minutes.

10. The cleaning method according to any one of claims 1 to 9, characterized in that: The cleaning method comprises the following steps: (1) Cleaning the non-sputtering surface of the high-purity copper target with a purity of ≥4N after sandblasting; The cleaning process includes ultrasonic cleaning or wiping using a cleaning agent with a purity of ≥95wt%; The power of the ultrasonic cleaning is 1500-2500W, the temperature is 15-30°C, and the time is 10-20min; The wiping treatment includes using a first cleaning tool to dip in a cleaning agent, and then wiping repeatedly for 25 to 40 minutes; the mesh size of the first cleaning tool is 100 to 150 meshes; (2) wiping and cleaning the high-purity copper target after the cleaning treatment in step (1) with a sodium fluoride solution, and obtaining a cleaned target after drying; The raw materials for preparing the sodium fluoride solution include sodium fluoride and water in a mass ratio of 1:5 to 15; the wiping cleaning includes using a second cleaning tool to dip into the sodium fluoride solution, and then wiping repeatedly for 5 to 10 minutes; The drying treatment includes purge drying or static drying at a temperature of 20 to 30° C.; the purge drying time is 40 to 90 seconds; and the static drying time is 2 to 3 minutes.

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