Laser-based modified glass substrate through hole processing method and device

Abstract

The invention provides a glass substrate through hole processing method and device based on laser modification, which are applied to the technical field of laser processing, and the method comprises the following steps: superposing a target horizontal axis central plane of a determined Bessel beam non-diffraction propagation length target horizontal axis center with a thickness central plane of a to-be-processed glass substrate, then, the to-be-processed glass substrate is modified, so that the phenomenon that when the non-diffraction propagation length non-target transverse axis central plane coincides with the thickness central plane of the to-be-processed glass substrate, the non-diffraction propagation length non-target transverse axis central plane is not uniform due to different light beam diameters and energy intensities on the two sides of the non-diffraction propagation length non-target transverse axis central plane can be avoided; therefore, the upper part and the lower part, surrounding the thickness central surface, of the through hole of the obtained glass substrate can be uniformly modified, and the quality of subsequent through hole etching is further improved.

Description

Technical Field

[0001] The present disclosure relates to the field of laser processing technology, and in particular to the field of glass substrate through-hole preparation technology. Background Art

[0002] Glass substrate is a common material with good optical transparency and mechanical strength. Through Glass Via (TGV) is a vertical channel made in a glass substrate by precision machining. It is widely used in integrated circuits and microelectronic packaging to play the role of electrical connection and heat dissipation. Bessel beams are used in the preparation of through holes in glass substrates due to their long focal depth and non-diffraction characteristics.

[0003] However, if Figure 1 As shown in the schematic diagram of the Bessel beam, the Bessel beam has the characteristic of propagating in a cone-like shape around both sides of a central plane. The existing method of using the Bessel beam for laser modification does not take into account the aforementioned characteristic of the Bessel beam propagating in a cone-like shape around both sides of a central plane, resulting in the problem of uneven modification of the through holes in the manufactured glass substrate. Summary of the invention

[0004] In view of this, the embodiments of the present disclosure provide a method and device for processing through-holes in a glass substrate based on laser modification, which at least partially solve the problems existing in the prior art.

[0005] In a first aspect, the present disclosure provides a method for processing a through hole of a glass substrate based on laser modification, comprising:

[0006] Determine a target transverse axis center plane of a target Bessel light beam non-diffraction propagation length target transverse axis center plane, the target transverse axis center plane;

[0007] Aligning a target transverse axis center plane of a target transverse axis center of a non-diffraction propagation length of the target Bessel light beam with a thickness center plane of a glass substrate to be processed;

[0008] The target horizontal axis center plane is controlled to coincide with the thickness center plane of the glass substrate to be processed, and the glass substrate to be processed is modified.

[0009] Optionally, the step of aligning a target transverse axis center plane of a target transverse axis center of a non-diffraction propagation length of the target Bessel light beam with a thickness center plane of the to-be-processed glass substrate comprises:

[0010] Aligning the target transverse axis center plane of the target transverse axis center of the non-diffraction propagation length of the target Bessel light beam with the to-be-processed surface of the to-be-processed glass substrate;

[0011] After the target transverse axis center plane is overlapped with the to-be-processed surface of the to-be-processed glass substrate, the to-be-processed glass substrate is moved toward the emission direction of the target Bessel light beam by 1 / 2 of the thickness of the to-be-processed glass substrate, so that the target transverse axis center plane of the target Bessel light beam's non-diffraction propagation length target transverse axis coincides with the thickness center plane of the to-be-processed glass substrate.

[0012] Optionally, the step of aligning a target transverse axis center plane of a target transverse axis center of a non-diffraction propagation length of the target Bessel light beam with a surface to be processed of the glass substrate to be processed comprises:

[0013] Determine the relative horizontal axis center position of the non-diffraction propagation length of the target Bessel beam:

[0014] Adjusting the position of the to-be-processed surface of the to-be-processed glass substrate so that the to-be-processed surface of the to-be-processed glass substrate and the relative transverse axis center plane of the relative transverse axis center of the non-diffraction propagation length of the target Bessel light beam are initially coincident, the relative transverse axis center plane;

[0015] Controlling the glass substrate to be processed to move at a position where the center plane of the relative horizontal axis and the surface to be processed of the glass substrate to be processed initially overlap, and collecting a diffraction topography image of a target Bessel light beam reflected by the surface to be processed of the glass substrate to be processed through a configured CCD camera; the CCD camera is configured to collect a diffraction topography image of a target Bessel light beam reflected by the surface to be processed of the glass substrate to be processed;

[0016] When the morphology clarity and completeness of the collected target Bessel beam diffraction morphology image meet predetermined conditions, it is determined that the processed surface of the glass substrate to be processed coincides with the target horizontal axis center plane of the target Bessel beam non-diffraction propagation length target horizontal axis center.

[0017] Optionally, when the acquired target Bessel beam diffraction topography image has a shape clarity and a completeness that meets a predetermined condition, the method includes:

[0018] The collected target Bessel beam diffraction morphology image is compared with a predetermined comparison template. If the consistency result of the comparison satisfies a predetermined threshold range, it is determined that the morphology clarity and completeness of the target Bessel beam diffraction morphology image meet predetermined conditions.

[0019] Optionally, determining the relative horizontal axis center position of the non-diffraction propagation length of the target Bessel light beam comprises:

[0020] Control the movement of the focusing objective lens, and collect the focused spot images of the target Bessel light beam at different positions of the focusing objective lens through a spot analyzer; the spot analyzer is configured so that the target Bessel light beam obtained after the generated Bessel light beam is focused by the focusing objective lens can be irradiated on the target surface of the spot analyzer; the focusing objective lens is used to focus the generated Bessel light beam to obtain the target Bessel light beam for modifying the glass substrate to be processed;

[0021] Performing spot morphology analysis according to the collected focused spot image of the target Bessel light beam, recording the first position of the focusing objective lens when the focused spot of the target Bessel light beam has a complete first morphology, and the second position of the focusing objective lens when the focused spot morphology of the target Bessel light beam is missing;

[0022] The center position of the first position and the second position is determined as the relative horizontal axis center position of the non-diffraction propagation length of the target Bessel light beam.

[0023] In a second aspect, the present disclosure discloses a method and device for processing a through-hole of a glass substrate based on laser modification, the device comprising:

[0024] A translation stage, used for carrying a glass substrate to be processed;

[0025] A target Bessel beam generating module is used to generate a target Bessel beam for modifying the glass substrate to be processed; the target Bessel beam generating module comprises a laser emitter, a beam shaping module, and a focusing objective lens; the laser generator is used to emit a Gaussian beam, the beam shaping module is used to shape the Gaussian beam to obtain a Bessel beam, and the focusing objective lens is used to focus the generated Bessel beam to obtain a target Bessel beam;

[0026] The industrial computer is used to control the position of the translation stage carrying the glass substrate to be processed according to the input thickness of the glass substrate to be processed and the determined target transverse axis center plane of the target transverse axis center of the non-diffraction propagation length of the target Bessel light beam, so that the target transverse axis center plane of the target transverse axis center of the non-diffraction propagation length of the target Bessel light beam coincides with the thickness center plane of the glass substrate to be processed.

[0027] Optionally, the industrial computer is further used to control the position of a translation stage carrying the glass substrate to be processed, so that the target transverse axis center plane of the target transverse axis center of the non-diffraction propagation length of the target Bessel light beam coincides with the surface to be processed of the glass substrate to be processed, and after the target transverse axis center plane coincides with the surface to be processed of the glass substrate to be processed, the glass substrate to be processed is moved in the emission direction of the target Bessel light beam by 1 / 2 of the thickness of the glass substrate to be processed, so that the target transverse axis center plane of the target transverse axis center of the non-diffraction propagation length of the target Bessel light beam coincides with the thickness center plane of the glass substrate to be processed.

[0028] Optionally, the device further comprises:

[0029] A CCD camera, wherein the CCD camera is configured to collect a diffraction topography image of a target Bessel light beam reflected by a surface to be processed of the glass to be processed;

[0030] The industrial computer is also used to determine the relative horizontal axis center position of the non-diffraction propagation length of the target Bessel light beam; and to adjust the position of the to-be-processed surface of the glass substrate to be processed by adjusting the position of the displacement stage carrying the glass substrate to be processed, so that the to-be-processed surface of the glass substrate to be processed and the relative horizontal axis center plane of the relative horizontal axis center of the non-diffraction propagation length of the target Bessel light beam are initially coincident, the relative horizontal axis center plane; and to control the glass substrate to be processed to move at the position where the relative horizontal axis center plane and the to-be-processed surface of the glass substrate to be processed are initially coincident, and collect the diffraction morphology image of the target Bessel light beam reflected by the to-be-processed surface of the glass substrate to be processed through the configured CCD camera; and to analyze the collected diffraction morphology image of the target Bessel light beam, and when the morphology clarity and completeness of the collected diffraction morphology image of the target Bessel light beam meet predetermined conditions, it is determined that the to-be-processed surface of the glass substrate to be processed is coincident with the target horizontal axis center plane of the target horizontal axis center of the non-diffraction propagation length of the target Bessel light beam.

[0031] Optionally, the industrial computer is also used to compare the collected target Bessel beam diffraction morphology image with a predetermined comparison template. If the consistency result of the comparison meets a predetermined threshold range, it is determined that the morphology clarity and completeness of the target Bessel beam diffraction morphology image meet predetermined conditions.

[0032] Optionally, the device further comprises:

[0033] A light spot analyzer, wherein the light spot analyzer is configured to generate a Bessel light beam, and then focus the generated Bessel light beam through a focusing objective lens to obtain a target Bessel light beam, which can be irradiated on a target surface of the light spot analyzer, and collect focused light spot images of the target Bessel light beam at different positions of the focusing objective lens;

[0034] The industrial computer is also used to control the movement of the focusing objective lens, perform spot morphology analysis based on the collected focused spot images of the target Bessel light beam at different positions of the focusing objective lens, record the first position of the focusing objective lens when the focused spot of the target Bessel light beam has a complete first morphology, and the second position of the focusing objective lens when the focused spot morphology of the target Bessel light beam is missing; and determine the center position of the first position and the second position as the relative horizontal axis center position of the diffraction-free propagation length of the target Bessel light beam.

[0035] The present invention provides a method for processing a through hole of a glass substrate based on laser modification, comprising: determining a target transverse axis center plane of a target transverse axis center of a target Bessel light beam without diffraction, the target transverse axis center plane; coinciding the target transverse axis center plane of the target transverse axis center of the target Bessel light beam without diffraction with a thickness center plane of a glass substrate to be processed; controlling the target transverse axis center plane to coincide with the thickness center plane of the glass substrate to be processed, and modifying the glass substrate to be processed. That is to say, by aligning the target transverse axis center plane of the determined diffraction-free propagation length target transverse axis center with the thickness center plane of the glass substrate to be processed, and then performing a modification treatment on the glass substrate to be processed, it is possible to avoid the problem of uneven modification of the upper and lower sides of the thickness center plane of the glass substrate to be processed due to the different beam diameters and energy intensities on both sides of the non-target transverse axis center plane of the diffraction-free propagation length when aligning the non-target transverse axis center plane of the diffraction-free propagation length with the thickness center plane of the glass substrate to be processed, thereby ensuring that the upper and lower parts of the through hole of the obtained glass substrate around the thickness center plane can be uniformly modified, thereby improving the quality of subsequent through hole etching.

[0036] In order to make the above-mentioned objectives, features and advantages of the present disclosure more obvious and easy to understand, preferred embodiments are specifically cited below and described in detail with reference to the attached drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0037] In order to more clearly illustrate the technical solutions of the embodiments of the present disclosure, the following is a brief introduction to the drawings required for use in the embodiments. The drawings herein are incorporated into the specification and constitute a part of the specification. These drawings illustrate embodiments consistent with the present disclosure and are used together with the specification to illustrate the technical solutions of the present disclosure. It should be understood that the following drawings only illustrate certain embodiments of the present disclosure and should not be regarded as limiting the scope. For ordinary technicians in this field, other relevant drawings can also be obtained based on these drawings without creative work.

[0038] Figure 1 is a schematic diagram of a Bessel beam provided by an embodiment of the present disclosure;

[0039] Figure 2 It is a schematic diagram of the structure of a through-hole processing device for glass substrate based on laser modification provided in an embodiment of the present disclosure;

[0040] Figure 3 It is a schematic diagram showing that the center plane of the non-diffraction propagation length center of the Bessel light beam provided by the embodiment of the present disclosure coincides with the thickness center plane of the glass substrate to be processed;

[0041] Figure 4 It is a schematic diagram of the process flow of a through-hole processing method for a glass substrate modified by laser provided in an embodiment of the present disclosure;

[0042] Figure 5 An example diagram of a target Bessel light beam diffraction profile image collected when a to-be-processed surface of a to-be-processed glass substrate coincides with a target horizontal axis center plane of a target horizontal axis center of a non-diffraction propagation length of the target Bessel light beam;

[0043] Figure 6 This is an example of a target Bessel beam diffraction profile image collected when the non-target transverse axis center plane coincides with the to-be-processed surface of the to-be-processed glass substrate;

[0044] Figure 7 This is another example diagram of the target Bessel beam diffraction morphology image collected when the non-target transverse axis center plane coincides with the surface to be processed of the glass substrate to be processed.

[0045] The description of the figures is as follows:

[0046] 1-laser transmitter; 2-optical gate; 3-power adjustment module; 4-beam expander; 5-wave plate; 6-aperture; 7-beam shaping module; 8-focusing objective; 9-imaging lens barrel; 91-dichroic mirror; 92-double cemented lens; 10-CCD camera; 11-spot analyzer; 12-translation stage; 13-industrial computer. DETAILED DESCRIPTION

[0047] The following describes the implementation methods of the embodiments of the present disclosure through specific specific examples. Those skilled in the art can easily understand other advantages and effects of the embodiments of the present disclosure from the contents disclosed in this specification. Obviously, the described embodiments are only a part of the embodiments of the present disclosure, rather than all of the embodiments. The embodiments of the present disclosure can also be implemented or applied through other different specific implementation methods, and the details in this specification can also be modified or changed in various ways based on different viewpoints and applications without departing from the spirit of the embodiments of the present disclosure. It should be noted that the following embodiments and features in the embodiments can be combined with each other without conflict. Based on the embodiments in the embodiments of the present disclosure, all other embodiments obtained by ordinary technicians in this field without making creative work belong to the scope of protection of the embodiments of the present disclosure.

[0048] A glass substrate through-hole processing device based on Bessel beam usually includes: a translation stage for carrying a glass substrate, a laser transmitter, a beam shaping module (such as a conical lens), and a focusing objective lens; a general processing flow method includes: a Gaussian beam emitted by a laser transmitter is shaped by a beam shaping module to obtain a Bessel beam, and the Bessel beam is passed through a focusing objective lens to obtain a suitable focusing spot and focal depth, so as to modify the glass substrate.

[0049] The embodiment of the present disclosure provides a laser-based through-hole processing device for glass substrates. Figure 2As shown, including:

[0050] The translation stage 12 is used to carry the glass substrate to be processed.

[0051] The target Bessel beam generation module is used to generate a target Bessel beam for modifying the glass substrate to be processed; the target Bessel beam generation module includes a laser emitter 1, a beam shaping module 7, and a focusing lens 8; the laser generator 1 is used to emit a Gaussian beam, the beam shaping module 7 is used to shape the Gaussian beam to obtain a Bessel beam, and the focusing lens 8 is used to focus the generated Bessel beam to obtain a target Bessel beam. Among them, the laser emitter 1 can be an infrared picosecond laser, or other laser emitters that can realize the functions of the present disclosure; the focusing lens 8 can be an infrared focusing lens, or other focusing lens that can realize the functions of the present disclosure. Specifically, the laser emitter 1 and the beam shaping module 7 may also include a light gate 2, a power adjustment module 3, a beam expander 4, a wave plate 5, and an aperture 6 in sequence; specifically, the laser emitter 1 may emit a Gaussian beam, which enters the power adjustment module 3 through the light gate 2, and the power of the Gaussian laser beam is adjusted by the power adjustment module 3, and then expanded and collimated by the beam expander 4, and then enters the beam shaping module 7 through the wave plate 5 and the aperture 6, and is shaped to obtain a Bessel beam, and then passes through the focusing objective lens 8 to obtain a target Bessel beam for processing the glass substrate to be processed.

[0052] The industrial computer 13 is used to calculate the target transverse axis center plane of the target Bessel light beam non-diffraction propagation length target transverse axis center (wherein, for example, Figure 1 For example, the target horizontal axis center is the center of the starting point L1 and the end point L2 of the non-diffraction propagation area of ​​the Bessel light beam, that is, the propagation direction of the Bessel light beam is the horizontal axis, and the middle area between the starting point L1 and the end point L2 of the non-diffraction propagation area of ​​the Bessel light beam is the non-diffraction propagation length of the Bessel light beam. The target horizontal axis center is the center point of L1 and L2 on the horizontal axis. The target horizontal axis center plane is the normal plane where the target center point of the non-diffraction propagation length of the Bessel light beam is located. The non-diffraction propagation length of the Bessel light beam refers to the fact that the lateral light intensity distribution of the Bessel light beam changes little within a certain propagation distance. The threshold value of the change can be set based on different needs to determine the size of the non-diffraction propagation length. The position of the displacement stage 12 carrying the glass substrate to be processed is controlled so that the target horizontal axis center plane of the target horizontal axis center of the non-diffraction propagation length of the target Bessel light beam coincides with the thickness center plane of the glass substrate to be processed. Among them, the thickness center plane of the glass substrate to be processed, such as Figure 3 As shown, it may be a plane at which the distance from the upper surface of the glass substrate to be processed to 1 / 2 of the thickness of the glass substrate to be processed is located.

[0053] Among them, due to the existence of errors and other reasons, the thickness center plane of the glass substrate to be processed in the present disclosure is not an absolutely accurate value. In the actual implementation process, the plane where the glass substrate to be processed coincides with the target horizontal axis center plane is not the plane where the absolutely accurate thickness center plane is located, but may be approximately the plane where the thickness center plane is located. The coincidence of approximately the plane where the thickness center plane is located also falls within the protection scope of the present patent.

[0054] Specifically, during the application process, the thickness H of the glass substrate to be processed can be input, and the industrial computer can control the position of the translation stage carrying the glass substrate to be processed according to the input thickness H of the glass substrate to be processed and the determined target transverse axis center plane of the target transverse axis center of the non-diffraction propagation length of the target Bessel light beam, so that the target transverse axis center plane of the target transverse axis center of the non-diffraction propagation length of the target Bessel light beam coincides with the thickness center plane of the glass substrate to be processed, such as Figure 3 As shown, since the target Bessel beam has a non-diffraction propagation length and a uniform beam diameter and energy distribution on both sides of the target transverse axis center plane, the glass substrate to be processed can be modified more uniformly on both sides around the thickness center plane.

[0055] Specifically, the industrial computer can control the position of the displacement stage carrying the glass substrate to be processed, so that the target horizontal axis center plane of the target horizontal axis center of the non-diffraction propagation length of the target Bessel light beam coincides with the surface to be processed of the glass substrate to be processed, and after the target horizontal axis center plane coincides with the surface to be processed (the upper surface of the glass) of the glass substrate to be processed, the glass substrate to be processed is moved toward the emission direction of the target Bessel light beam by 1 / 2 of the thickness of the glass substrate to be processed, so that the target horizontal axis center plane of the target horizontal axis center of the non-diffraction propagation length of the target Bessel light beam coincides with the thickness center plane of the glass substrate to be processed.

[0056] Specifically, the target transverse axis center plane of the target transverse axis center of the non-diffraction propagation length of the target Bessel beam can be identified and determined by the corresponding image analysis method; the position of the target transverse axis center plane of the target transverse axis center of the non-diffraction propagation length of the target Bessel beam can also be calculated and determined according to the parameters of each instrument used to generate the target Bessel beam and the connection relationship between the instruments; the position of the target transverse axis center plane of the target transverse axis center of the non-diffraction propagation length of the target Bessel beam can also be identified and determined by other methods. Among them, the determined target transverse axis center and target transverse axis center plane are not the absolute target transverse axis center and target transverse axis center plane, and there may be certain errors.

[0057] In the disclosed embodiment, the target transverse axis center plane of the determined target transverse axis center of the non-diffraction propagation length of the Bessel light beam is overlapped with the thickness center plane of the glass substrate to be processed, and then the glass substrate to be processed is modified. This can avoid the problem of uneven modification of the upper and lower sides of the thickness center plane of the glass substrate to be processed due to different beam diameters and energy intensities on both sides of the non-target transverse axis center plane of the non-diffraction propagation length when the non-target transverse axis center plane of the non-diffraction propagation length coincides with the thickness center plane of the glass substrate to be processed, thereby ensuring that the upper and lower parts of the through hole of the obtained glass substrate around the thickness center plane can be uniformly modified, thereby improving the quality of subsequent through hole etching.

[0058] The present disclosure provides a possible implementation method. Specifically, the device further includes:

[0059] CCD camera 10, the CCD camera 10 is configured to collect the diffraction morphology image of the target Bessel light beam reflected by the processed surface of the glass to be processed; spot analyzer 11, the spot analyzer is configured to generate a Bessel light beam, and then the target Bessel light beam obtained by focusing the Bessel light beam through the focusing objective lens can be irradiated on the target surface of the spot analyzer, and collect the focused spot images of the target Bessel light beam at different positions of the focusing objective lens. Among them, the CCD camera is a digital camera with a charge coupled device image sensor, and CCD is the abbreviation of charge coupled device (charge coupled device).

[0060] Specifically, Figure 2 As shown, the imaging lens barrel 9 and the CCD camera 10 can be fixed on the Z-axis gantry, the focusing lens 8 is fixed on the Z-axis movable rail, the CCD camera 10 is placed above the imaging lens barrel, the imaging lens barrel 9 is placed above the focusing lens 8, the spot analyzer 11 is fixed to the movable rail on the left or right side of the displacement platform, the vacuum dishwashing plate is fixed to the upper part of the electric control displacement platform, and the industrial computer is connected to the electric control displacement platform, the spot analyzer rail, the focusing lens rail, the laser transmitter, the laser shutter, the power adjustment module and the beam shaping module by a wire harness; the laser transmitter 1 is arranged in front of the laser shutter. Specifically, the imaging barrel lens can include a double glued lens 92 and a dichroic mirror 91, the double glued lens 92 is placed above the dichroic mirror 91, the double glued lens 92 is placed in parallel, and the dichroic mirror 91 is fixed at a 45° tilt. Specifically, the dichroic mirror 91 includes a transmission surface and a reflection surface; the reflection surface is coated with a Knm high reflection film, and the transmission surface is coated with a visible light anti-reflection film, and K can be 808 to 1550. Specifically, the vacuum chuck is used to support and fix the glass substrate to be processed, and the vacuum chuck is fixed on the electric control displacement stage, and the electric control displacement stage is used to adjust the height position of the vacuum chuck and the glass substrate to be processed. Among them, the glass substrate to be processed can reflect the Bessel beam onto the dichroic mirror and reflectively couple into the focusing objective lens.

[0061] The industrial computer 13 can control the movement of the focusing objective lens, perform spot morphology analysis based on the collected focused spot images of the target Bessel light beam at different positions of the focusing objective lens 8, record the first position of the focusing objective lens when the first morphology of the focused spot of the target Bessel light beam is complete, and the second position of the focusing objective lens when the focused spot morphology of the target Bessel light beam is missing; and is used to determine the center position of the first position and the second position as the relative horizontal axis center position of the diffraction-free propagation length of the target Bessel light beam.

[0062] Specifically, the industrial computer can adjust the position of the to-be-processed surface of the glass substrate to be processed by adjusting the position of the displacement stage carrying the to-be-processed glass substrate, so that the to-be-processed surface of the glass substrate to be processed and the relative transverse axis center plane of the relative transverse axis center of the non-diffraction propagation length of the target Bessel light beam are initially coincident, the relative transverse axis center plane; and can also control the glass substrate to be processed to move at the position where the relative transverse axis center plane and the to-be-processed surface of the glass substrate to be processed are initially coincident, and collect the diffraction morphology image of the target Bessel light beam reflected by the to-be-processed surface of the glass substrate to be processed through the configured CCD camera; and can also analyze the collected diffraction morphology image of the target Bessel light beam, and when the morphology clarity and completeness of the collected diffraction morphology image of the target Bessel light beam meet predetermined conditions, it is determined that the to-be-processed surface of the glass substrate to be processed is coincident with the target transverse axis center plane of the target transverse axis center of the non-diffraction propagation length of the target Bessel light beam.

[0063] Among them, the corresponding machine learning classification model can be trained, and the position of the glass substrate to be processed corresponding to the current target Bessel beam diffraction morphology image can be input into the pre-trained machine learning classification model to determine whether the position of the glass substrate to be processed coincides with the target horizontal axis center plane of the target horizontal axis center of the non-diffraction propagation length of the target Bessel beam.

[0064] Among them, the position of the to-be-processed glass substrate corresponding to the current target Bessel light beam diffraction profile image can also be determined by a corresponding image similarity calculation algorithm to determine whether the to-be-processed surface of the to-be-processed glass substrate coincides with the target horizontal axis center plane of the target horizontal axis center of the non-diffraction propagation length of the target Bessel light beam. Specifically, the industrial computer can compare the collected target Bessel light beam diffraction profile image with a predetermined comparison template, and perform image similarity calculation by one or more image similarity calculation methods such as histogram comparison and feature point matching. If the consistency result of the comparison satisfies a predetermined threshold range, it is determined that the morphology clarity and completeness of the target Bessel light beam diffraction profile image meet predetermined conditions.

[0065] For example, through the device of the embodiment of the present disclosure, the following method can be adopted to achieve that the target transverse axis center plane of the target transverse axis center of the target Bessel light beam coincides with the thickness center plane of the glass substrate to be processed:

[0066] 1. System configuration steps, use the coordinate processing module on the industrial computer to record the absolute coordinate positions of the near-infrared focusing lens, translation stage, and spot analyzer. Among them, the coordinate processing module is a coordinate recording / processing software in the industrial computer. When the system is started, it can record the absolute coordinate positions (X, Y, Z) of some hardware. Its workflow is to set a corner of the top surface of the gantry as the origin (0,0,0) to establish a three-dimensional coordinate system; from the origin to the left or right as the X-axis, from the origin forward or backward as the Y-axis, and from the origin vertically downward as the Z-axis.

[0067] 2. The target Bessel beam generation step is to emit a Gaussian beam through an infrared picosecond laser, which enters the power adjustment module through an optical gate. The laser beam power is adjusted by the power adjustment module and then collimated by a beam expander. After that, it passes through a wave plate and an aperture and enters a beam shaping module to modulate and generate a Bessel beam. After the Bessel beam is focused by a near-infrared focusing objective lens, the target Bessel beam is obtained.

[0068] 3. The step of determining the non-diffraction propagation length of the target Bessel beam relative to the center of the horizontal axis and the center plane of the horizontal axis is that the industrial computer sends a displacement instruction to the spot analyzer to align it with the near-infrared focusing objective lens to observe the beam spot shape. Move the near-infrared focusing objective lens up and down, and observe the spot shape with the help of the spot analyzer, record the starting position (X1, Y1, Z1) of the near-infrared focusing objective lens when the shape is complete for the first time, and the ending position (X1, Y1, Z2) when the shape is missing, and then the non-diffraction propagation length of the target Bessel beam L1 = Z2-Z1, and the non-diffraction propagation length of the target Bessel beam relative to the center of the horizontal axis is (X1, Y1, Z3), where Z3 = Z1 + L1 / 2 = (Z1 + Z2) / 2. In addition, the focusing objective lens can be controlled to remain stationary and the spot analyzer can be moved to determine the position relative to the center of the horizontal axis.

[0069] 4. In the step of initially coinciding the center plane of the relative horizontal axis with the surface to be processed of the glass substrate to be processed, the industrial computer controls the translation stage to move to the coordinate position (X2, Y2, Z4), Z4 = Z3 + h1, h1 is the thickness value of the glass substrate to be processed input to the industrial computer, so that the upper surface of the glass substrate to be processed (the surface to be processed) and the non-diffraction propagation length of the target Bessel light beam relative to the center of the horizontal axis are initially coincident with each other.

[0070] 5. The step of coinciding the target horizontal axis center plane with the to-be-processed surface of the glass substrate to be processed, the light of the target Bessel light beam reflected by the to-be-processed surface of the glass substrate to be processed is imaged on the target surface of the CCD by the near-infrared objective lens and the double glued lens, and the diffraction morphology of the target Bessel light beam on the to-be-processed surface of the glass substrate to be processed can be collected by the CCD camera. By moving the translation stage up and down, the diffraction morphology of the beam at different heights near the center of the non-diffraction propagation length of the target Bessel beam can be collected (the principle is: the surface to be processed of the glass substrate to be processed (i.e., the upper surface of the glass) can be compared to a reflector. When the Bessel beam is irradiated on the upper surface of the glass through the objective lens, part of the light will be reflected by the upper surface of the glass and enter the objective lens again. After being focused by the imaging lens barrel, it is irradiated on the CCD target surface, thereby forming an image. Therefore, when moving up and down, it is equivalent to the light rings at different positions of the non-diffraction propagation length of the Bessel beam hitting the upper surface of the glass, which are then reflected and focused on the CCD target surface). By comparing the clarity and completeness of the diffraction morphology of the target Bessel beam, it can be determined whether the target horizontal axis center plane of the target horizontal axis center of the non-diffraction propagation length of the target Bessel beam coincides with the upper surface of the glass substrate to be processed (the surface to be processed). If the clarity and completeness of the diffraction morphology meet the predetermined conditions, such as the similarity between the collected diffraction morphology image of the target Bessel light beam and the image of the predetermined template meets the predetermined threshold, it can be considered that the target Bessel light beam has a non-diffraction propagation length and the target horizontal axis center plane coincides with the upper surface of the glass substrate to be processed (the surface to be processed).

[0071] 6. The step of coinciding the center plane of the target horizontal axis with the center plane of the thickness of the glass substrate to be processed (the plane where 1 / 2 of the thickness of the glass substrate to be processed is located). After the coincidence, the coordinate processing module of the industrial computer sends an instruction to make the translation stage move downward relative to h2=h1 / 2, so that the center plane of the target horizontal axis of the non-diffraction propagation length of the target Bessel light beam coincides with the center plane of the thickness of the glass to be processed.

[0072] In the disclosed embodiment, due to reasons such as instrument parameter errors, it may be impossible to calculate and determine the target transverse axis center of the target Bessel light beam's non-diffraction propagation length in an absolute sense, and the relative transverse axis center plane of the target Bessel light beam's non-diffraction propagation length relative transverse axis center may be determined first, and then the relative transverse axis center plane may be preliminarily overlapped with the to-be-processed surface of the glass substrate to be processed (rough overlap or preliminary overlap step); then, a diffraction topography image of the target Bessel light beam reflected by the to-be-processed surface of the glass substrate to be processed near the preliminary overlap position is collected, and through an image analysis method, the position of the glass substrate to be processed corresponding to the diffraction topography image whose clarity and completeness meet predetermined conditions is used as the position where the to-be-processed surface of the glass substrate to be processed is overlapped with the target transverse axis center plane of the target transverse axis center of the target Bessel light beam's non-diffraction propagation length (precise overlap step), so as to achieve the overlap of the to-be-processed surface of the glass substrate to be processed with the target transverse axis center plane of the target transverse axis center of the target Bessel light beam's non-diffraction propagation length. That is, the position of the glass substrate to be processed is adjusted according to the position relative to the center of the horizontal axis through the industrial computer, and a preliminary overlap is first achieved. Then, based on the preliminary overlap, a precise overlap is achieved through image comparison, so as to realize the automatic processing of the overlap between the center surface of the thickness of the glass substrate to be processed (the plane where 1 / 2 of the thickness of the glass substrate to be processed is located) and the center plane of the center of the target horizontal axis of the non-diffraction propagation length of the target Bessel light beam, which improves the focusing efficiency compared with the manual focusing method (the center plane of the center of the target horizontal axis of the non-diffraction propagation length of the target Bessel light beam and the center plane of the thickness of the glass substrate to be processed); in addition, by the method of preliminary overlap first and then precise overlap, the problem of requiring a large amount of data analysis and calculation when there is no preliminary overlap step and precise overlap is directly performed through image analysis can also be avoided; furthermore, the method of the embodiment of the present disclosure only needs to adjust the thickness of the input glass substrate for glass substrates of different thicknesses, and has universal applicability.

[0073] The present disclosure provides a method for processing a through hole of a glass substrate based on laser modification. Figure 4 As shown, including:

[0074] Step S401, determining a target transverse axis center plane of a target Bessel light beam non-diffraction propagation length and a target transverse axis center plane.

[0075] Among them, for example, Figure 1 For example, the target horizontal axis center is the center of the starting point L1 and the end point L2 of the diffraction-free propagation area of ​​the Bessel beam, that is, the propagation direction of the Bessel beam is the horizontal axis, and the middle area between the starting point L1 and the end point L2 of the diffraction-free propagation area of ​​the Bessel beam is the diffraction-free propagation length of the Bessel beam. The target horizontal axis center is the center point of L1 and L2 on the horizontal axis, and the target horizontal axis center plane is the normal plane where the target center point of the diffraction-free propagation length of the Bessel beam is located.

[0076] The non-diffraction propagation length of the Bessel beam refers to the fact that the lateral light intensity distribution of the Bessel beam changes little within a certain propagation distance. A threshold value of the change can be set according to actual needs to determine the size of the non-diffraction propagation length.

[0077] Specifically, the target transverse axis center plane of the target transverse axis center of the non-diffraction propagation length of the target Bessel beam can be identified and determined by the corresponding image analysis method; the position of the target transverse axis center plane of the target transverse axis center of the non-diffraction propagation length of the target Bessel beam can also be calculated and determined according to the parameters of each instrument used to generate the target Bessel beam and the connection relationship between the instruments; the position of the target transverse axis center plane of the target transverse axis center of the non-diffraction propagation length of the target Bessel beam can also be identified and determined by other methods. Among them, the determined target transverse axis center and target transverse axis center plane are not the absolute target transverse axis center and target transverse axis center plane, and there may be certain errors.

[0078] Step S402, aligning a target transverse axis center plane of a target transverse axis center of a target Bessel light beam without diffraction with a thickness center plane of a glass substrate to be processed.

[0079] Among them, the thickness center plane of the glass substrate to be processed is as follows: Figure 3 As shown, it may be a plane at which the distance from the upper surface of the glass substrate to be processed to 1 / 2 of the thickness of the glass substrate to be processed is located.

[0080] Specifically, the position of the moving platform carrying the glass substrate to be processed can be controlled by the industrial computer, and the distance between the target horizontal axis center plane of the target horizontal axis center of the non-diffraction propagation length of the target Bessel beam and the thickness center plane of the glass substrate to be processed can be adjusted to achieve the coincidence of the target horizontal axis center plane with the plane where the thickness center plane is located. Specifically, step S402 may include: step S4021 (not shown in the figure), coinciding the target horizontal axis center plane of the target horizontal axis center of the non-diffraction propagation length of the target Bessel beam with the to-be-processed surface of the glass substrate to be processed (specifically, it can be the upper surface of the glass substrate when the glass substrate to be processed is placed on the stage for processing); step S4022 (not shown in the figure), after coinciding the target horizontal axis center plane with the to-be-processed surface of the glass substrate to be processed, the glass substrate to be processed is moved toward the emission direction of the target Bessel beam by 1 / 2 of the thickness of the glass substrate to be processed, so that the target horizontal axis center plane of the target horizontal axis center of the non-diffraction propagation length of the target Bessel beam coincides with the thickness center plane of the glass substrate to be processed.

[0081] Step S403, controlling the target horizontal axis center plane to coincide with the thickness center plane of the glass substrate to be processed, and performing a modification process on the glass substrate to be processed.

[0082] Specifically, the target horizontal axis center plane can be controlled to coincide with the thickness center plane of the glass substrate to be processed by an industrial computer, the glass substrate to be processed can be horizontally moved, and the generated target Bessel light beam can be used to modify the glass substrate to be processed according to the predetermined through-hole position.

[0083] The present invention provides a method for processing a through hole of a glass substrate based on laser modification, comprising: determining a target transverse axis center plane of a target transverse axis center of a target Bessel light beam without diffraction, the target transverse axis center plane; coinciding the target transverse axis center plane of the target transverse axis center of the target Bessel light beam without diffraction with a thickness center plane of a glass substrate to be processed; controlling the target transverse axis center plane to coincide with the thickness center plane of the glass substrate to be processed, and modifying the glass substrate to be processed. That is to say, by aligning the target transverse axis center plane of the determined diffraction-free propagation length target transverse axis center with the thickness center plane of the glass substrate to be processed, and then performing a modification treatment on the glass substrate to be processed, it is possible to avoid the problem of uneven modification of the upper and lower sides of the thickness center plane of the glass substrate to be processed due to the different beam diameters and energy intensities on both sides of the non-target transverse axis center plane of the diffraction-free propagation length when aligning the non-target transverse axis center plane of the diffraction-free propagation length with the thickness center plane of the glass substrate to be processed, thereby ensuring that the upper and lower parts of the through hole of the obtained glass substrate around the thickness center plane can be uniformly modified, thereby improving the quality of subsequent through hole etching.

[0084] The present disclosure provides a possible implementation method, wherein step S4021 (not shown in the figure) is to make the target transverse axis center plane of the target transverse axis center of the non-diffraction propagation length of the target Bessel light beam coincide with the surface to be processed of the glass substrate to be processed, including:

[0085] Step S40211 (not shown in the figure): determine the relative horizontal axis center position of the diffraction-free propagation length of the target Bessel light beam.

[0086] Specifically, the movement of the focusing objective lens can be controlled by an industrial computer, and the focused spot images of the target Bessel light beam at different positions of the focusing objective lens can be collected by a spot analyzer; the spot analyzer is configured so that the target Bessel light beam obtained after the generated Bessel light beam is focused by the focusing objective lens can be irradiated on the target surface of the spot analyzer; the focusing objective lens is used to focus the generated Bessel light beam to obtain the target Bessel light beam for modifying the glass substrate to be processed. Then, the spot morphology analysis is performed based on the collected focused spot image of the target Bessel light beam, and the first position of the focusing objective lens when the first morphology of the focused spot of the target Bessel light beam is complete, and the second position of the focusing objective lens when the focused spot morphology of the target Bessel light beam is missing is recorded. Finally, the center position of the first position and the second position is determined as the relative horizontal axis center position of the non-diffraction propagation length of the target Bessel light beam.

[0087] Exemplarily, by observing the spot morphology with the help of a spot analyzer, recording the starting position (X1, Y1, Z1) of the near-infrared focusing objective lens when the morphology is complete for the first time, and the ending position (X1, Y1, Z2) when the morphology is missing, it can be known that the diffraction-free propagation length of the target Bessel light beam L1=Z2-Z1, and the relative horizontal axis center position of the diffraction-free propagation length of the target Bessel light beam is (X1, Y1, Z3), where Z3=Z1+L1 / 2=(Z1+Z2) / 2.

[0088] Step S40212 (not shown in the figure): adjust the position of the to-be-processed surface of the to-be-processed glass substrate so that the to-be-processed surface of the to-be-processed glass substrate and the relative transverse axis center plane of the relative transverse axis center of the non-diffraction propagation length of the target Bessel light beam are initially coincident, the relative transverse axis center plane.

[0089] Continuing with the above example, the industrial computer controls the translation stage to move to the coordinate position (X2, Y2, Z4), where Z4=Z3+h1, h1 is the thickness value of the glass substrate to be processed input to the industrial computer, so that the upper surface of the glass substrate to be processed (the surface to be processed) and the relative horizontal axis center plane of the non-diffraction propagation length of the target Bessel light beam relative to the horizontal axis center are initially coincident.

[0090] Step S40213 (not shown in the figure): controlling the glass substrate to be processed to move at a position where the relative horizontal axis center plane and the to-be-processed surface of the glass substrate to be processed are initially overlapped, and collecting a diffraction morphology image of a target Bessel light beam reflected by the to-be-processed surface of the glass substrate to be processed through a configured CCD camera; the CCD camera is configured to collect a diffraction morphology image of a target Bessel light beam reflected by the to-be-processed surface of the glass substrate to be processed;

[0091] Step S40214 (not shown in the figure): when the morphological clarity and completeness of the collected target Bessel light beam diffraction morphological image meet predetermined conditions, it is determined that the to-be-processed surface of the to-be-processed glass substrate coincides with the target horizontal axis center plane of the target Bessel light beam non-diffraction propagation length target horizontal axis center plane.

[0092] Specifically, when the morphological clarity and completeness of the collected target Bessel light beam diffraction morphological image meet the predetermined conditions, it is determined that the to-be-processed surface of the to-be-processed glass substrate coincides with the target horizontal axis center plane of the target horizontal axis center of the non-diffraction propagation length of the target Bessel light beam. The principle is as follows: the to-be-processed surface of the to-be-processed glass substrate (i.e., the upper surface of the glass) can be analogized to a reflector. When the Bessel light beam is irradiated on the upper surface of the glass through the objective lens, part of the light will also be reflected by the upper surface of the glass and enter the objective lens again. After being focused by the imaging lens barrel, it is irradiated on the CCD target surface, thereby forming an image. Therefore, when moving up and down, the light rings at different positions of the non-diffraction propagation length of the Bessel light beam hit the upper surface of the glass, which is reflected and focused on the CCD target surface. Therefore, the image collected by the CCD can be used to determine when the target horizontal axis center plane of the target horizontal axis center of the non-diffraction propagation length of the Bessel light beam hits the upper surface of the glass. As a special non-diffraction light beam, the Bessel beam has a light intensity distribution in the cross section perpendicular to the propagation direction, which is manifested as a central light spot and many concentric circular rings. The light intensity decreases from the inside to the outside, so the energy is more concentrated near the central axis (i.e., near the center plane), which can achieve efficient material processing. Moreover, the center planes are symmetrical with each other above and below, and the light intensity is almost equal. Similarly, when the target horizontal axis center plane of the non-diffraction propagation length of the Bessel beam hits the upper surface of the glass, because the energy of the target horizontal axis center plane is most concentrated, the most light is reflected from the upper surface of the glass, which is manifested as the clearest and most complete diffraction rings and the most concentric rings in the CCD captured image. If the non-target horizontal axis center plane hits the upper surface of the glass, the clarity and completeness of the diffraction rings in the CCD captured image will be poor, and there will be fewer concentric rings. For example, if Figure 5 , 6 , 7, Figure 5 The middle diffraction ring is the clearest and most complete, and has the most concentric rings. Figure 6 , 7 The clarity and completeness of the diffraction rings in the middle are poor, and there are fewer concentric rings. Figure 5 The surface corresponding to the image collected in is the center plane of the target's horizontal axis.

[0093] Specifically, the collected target Bessel beam diffraction topography image can be compared with a predetermined comparison template. If the consistency result of the comparison satisfies a predetermined threshold range, it is determined that the topography clarity and completeness of the target Bessel beam diffraction topography image meet predetermined conditions.

[0094] The predetermined comparison template may be a Bessel beam diffraction topography image that meets the requirements of clarity and completeness. If the acquired target Bessel beam diffraction topography image meets the predetermined conditions, the position of the moving stage or the glass substrate to be processed corresponding to the image may be recorded, and the position is the position where the processed surface of the glass substrate to be processed coincides with the target horizontal axis center plane of the target Bessel beam non-diffraction propagation length target horizontal axis center, and the moving stage or the glass substrate to be processed may be controlled at this position to perform a modification process on the glass substrate to be processed.

[0095] In the disclosed embodiment, due to reasons such as instrument parameter errors, it may be impossible to calculate and determine the target transverse axis center of the target Bessel light beam's non-diffraction propagation length in an absolute sense, and the relative transverse axis center plane of the target Bessel light beam's non-diffraction propagation length relative transverse axis center may be determined first, and then the relative transverse axis center plane may be preliminarily overlapped with the to-be-processed surface of the glass substrate to be processed (rough overlap or preliminary overlap step); then, a diffraction topography image of the target Bessel light beam reflected by the to-be-processed surface of the glass substrate to be processed near the preliminary overlap position is collected, and through an image analysis method, the position of the glass substrate to be processed corresponding to the diffraction topography image whose clarity and completeness meet predetermined conditions is used as the position where the to-be-processed surface of the glass substrate to be processed is overlapped with the target transverse axis center plane of the target transverse axis center of the target Bessel light beam's non-diffraction propagation length (precise overlap step), so as to achieve the overlap of the to-be-processed surface of the glass substrate to be processed with the target transverse axis center plane of the target transverse axis center of the target Bessel light beam's non-diffraction propagation length. That is, the position of the glass substrate to be processed is adjusted according to the position relative to the center of the horizontal axis through the industrial computer, and a preliminary overlap is first achieved. Then, based on the preliminary overlap, a precise overlap is achieved through image comparison, so as to realize the automatic processing of the overlap between the center surface of the thickness of the glass substrate to be processed (the plane where 1 / 2 of the thickness of the glass substrate to be processed is located) and the center plane of the center of the target horizontal axis of the non-diffraction propagation length of the target Bessel light beam, which improves the focusing efficiency compared with the manual focusing method (the center plane of the center of the target horizontal axis of the non-diffraction propagation length of the target Bessel light beam and the center plane of the thickness of the glass substrate to be processed); in addition, by the method of preliminary overlap first and then precise overlap, the problem of requiring a large amount of data analysis and calculation when there is no preliminary overlap step and precise overlap is directly performed through image analysis can also be avoided; furthermore, the method of the embodiment of the present disclosure only needs to adjust the thickness of the input glass substrate for glass substrates of different thicknesses, and has universal applicability.

[0096] It should also be noted that the illustrations provided in the following embodiments are only schematic illustrations of the basic concept of the embodiments of the present disclosure. The drawings only show components related to the embodiments of the present disclosure rather than being drawn according to the number, shape and size of components in actual implementation. In actual implementation, the type, quantity and proportion of each component may be changed arbitrarily, and the component layout may also be more complicated.

[0097] The following embodiments of the present disclosure are provided by specific specific examples to illustrate the embodiments of the present disclosure. Those skilled in the art can easily understand other advantages and effects of the present disclosure from the contents disclosed in this specification. Obviously, the described embodiments are only a part of the embodiments of the present disclosure, rather than all of the embodiments. The present disclosure can also be implemented or applied through other different specific embodiments, and the details in this specification can also be modified or changed in various ways based on different viewpoints and applications without departing from the spirit of the present disclosure. It should be noted that the following embodiments and features in the embodiments can be combined with each other without conflict. Based on the embodiments in the present disclosure, all other embodiments obtained by ordinary technicians in the field without making creative work are within the scope of protection of the present disclosure.

[0098] It should be noted that various aspects of the embodiments within the scope of the appended claims are described below. It should be apparent that the aspects described herein may be embodied in a wide variety of forms, and any specific structure and / or function described herein is merely illustrative. Based on the present disclosure, it should be understood by those skilled in the art that an aspect described herein may be implemented independently of any other aspect, and two or more of these aspects may be combined in various ways. For example, any number of aspects described herein may be used to implement the device and / or practice the method. In addition, other structures and / or functionalities other than one or more of the aspects described herein may be used to implement this device and / or practice this method.

[0099] The embodiments described above are part of the embodiments of the present disclosure, but not all of them. Based on the embodiments of the present disclosure, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the embodiments of the present disclosure.

[0100] In the description of the embodiments of the present disclosure, it should be noted that the terms "center", "up", "down", "left", "right", "vertical", "horizontal", "inside", "outside", etc., indicating the orientation or positional relationship, are based on the orientation or positional relationship shown in the drawings, and are only for the convenience of describing the embodiments of the present disclosure and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the embodiments of the present disclosure. In addition, the terms "first", "second", and "third" are used for descriptive purposes only and cannot be understood as indicating or implying relative importance.

[0101] In the description of the embodiments of the present disclosure, it should be noted that, unless otherwise clearly specified and limited, the terms "installed", "connected", and "connected" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection, or it can be indirectly connected through an intermediate medium, or it can be the internal communication of two components. For ordinary technicians in this field, the specific meanings of the above terms in the embodiments of the present disclosure can be understood according to specific circumstances.

[0102] The above are only specific implementations of the embodiments of the present disclosure, but the protection scope of the embodiments of the present disclosure is not limited thereto. Any changes or replacements that can be easily thought of by any technician familiar with the technical field within the technical scope disclosed in the embodiments of the present disclosure should be included in the protection scope of the embodiments of the present disclosure. Therefore, the protection scope of the embodiments of the present disclosure should be based on the protection scope of the claims.

Claims

1. A method for processing through-holes in a glass substrate based on laser modification, characterized in that: include: Determine a target transverse axis center plane of a target transverse axis center of a target Bessel light beam without diffraction, wherein the target transverse axis center plane is a normal plane where the target transverse axis center point is located; Aligning a target transverse axis center plane of a target transverse axis center of a non-diffraction propagation length of the target Bessel light beam with a thickness center plane of a glass substrate to be processed; The target transverse axis center plane of the target Bessel light beam is controlled to coincide with the thickness center plane of the glass substrate to be processed, and the glass substrate to be processed is modified.

2. The method according to claim 1, characterized in that: The step of aligning a target transverse axis center plane of a target transverse axis center of a target Bessel light beam without diffraction with a thickness center plane of a glass substrate to be processed comprises: Aligning the target transverse axis center plane of the target transverse axis center of the non-diffraction propagation length of the target Bessel light beam with the to-be-processed surface of the to-be-processed glass substrate; After the target transverse axis center plane is overlapped with the to-be-processed surface of the to-be-processed glass substrate, the to-be-processed glass substrate is moved toward the emission direction of the target Bessel light beam by 1 / 2 of the thickness of the to-be-processed glass substrate, so that the target transverse axis center plane of the target Bessel light beam's non-diffraction propagation length target transverse axis coincides with the thickness center plane of the to-be-processed glass substrate.

3. The method according to claim 1, characterized in that The target transverse axis center plane of the target transverse axis center of the non-diffraction propagation length of the target Bessel light beam is overlapped with the to-be-processed surface of the to-be-processed glass substrate, including: Determine the relative horizontal axis center position of the non-diffraction propagation length of the target Bessel beam: Adjusting the position of the to-be-processed surface of the to-be-processed glass substrate so that the to-be-processed surface of the to-be-processed glass substrate is initially coincident with a relative transverse axis center plane of the relative transverse axis center of the non-diffraction propagation length of the target Bessel light beam, wherein the relative transverse axis center plane is a normal plane where the relative transverse axis center point of the non-diffraction propagation length of the Bessel light beam is located; Controlling the glass substrate to be processed to move at a position where the center plane of the relative horizontal axis and the surface to be processed of the glass substrate to be processed initially overlap, and collecting a diffraction topography image of a target Bessel light beam reflected by the surface to be processed of the glass substrate to be processed through a configured CCD camera; the CCD camera is configured to collect a diffraction topography image of a target Bessel light beam reflected by the surface to be processed of the glass substrate to be processed; When the morphology clarity and completeness of the collected target Bessel beam diffraction morphology image meet predetermined conditions, it is determined that the processed surface of the glass substrate to be processed coincides with the target horizontal axis center plane of the target Bessel beam non-diffraction propagation length target horizontal axis center.

4. The method according to claim 3, characterized in that When the morphological clarity and completeness of the collected target Bessel beam diffraction morphological image meet the predetermined conditions, it includes: The collected target Bessel beam diffraction morphology image is compared with a predetermined comparison template. If the consistency result of the comparison satisfies a predetermined threshold range, it is determined that the morphology clarity and completeness of the target Bessel beam diffraction morphology image meet predetermined conditions.

5. The method according to claim 3, characterized in that: The step of determining the relative horizontal axis center position of the non-diffraction propagation length of the target Bessel light beam comprises: Control the movement of the focusing objective lens, and collect the focused spot images of the target Bessel light beam at different positions of the focusing objective lens through a spot analyzer; the spot analyzer is configured so that the target Bessel light beam obtained after the generated Bessel light beam is focused by the focusing objective lens can be irradiated on the target surface of the spot analyzer; the focusing objective lens is used to focus the generated Bessel light beam to obtain the target Bessel light beam for modifying the glass substrate to be processed; Performing spot morphology analysis according to the collected focused spot image of the target Bessel light beam, recording the first position of the focusing objective lens when the focused spot of the target Bessel light beam has a complete first morphology, and the second position of the focusing objective lens when the focused spot morphology of the target Bessel light beam is missing; The center position of the first position and the second position is determined as the relative horizontal axis center position of the non-diffraction propagation length of the target Bessel light beam.

6. A laser-based through-hole processing device for glass substrates, characterized in that: The device includes: A translation stage, used for carrying a glass substrate to be processed; A target Bessel beam generating module is used to generate a target Bessel beam for modifying the glass substrate to be processed; the target Bessel beam generating module comprises a laser emitter, a beam shaping module, and a focusing objective lens; the laser generator is used to emit a Gaussian beam, the beam shaping module is used to shape the Gaussian beam to obtain a Bessel beam, and the focusing objective lens is used to focus the generated Bessel beam to obtain a target Bessel beam; The industrial computer is used to control the position of the translation stage carrying the glass substrate to be processed according to the input thickness of the glass substrate to be processed and the determined target transverse axis center plane of the target transverse axis center of the non-diffraction propagation length of the target Bessel light beam, so that the target transverse axis center plane of the target transverse axis center of the non-diffraction propagation length of the target Bessel light beam coincides with the thickness center plane of the glass substrate to be processed.

7. The processing device according to claim 6, characterized in that: The industrial computer is further used to control the position of the translation stage carrying the glass substrate to be processed, so that the target transverse axis center plane of the target transverse axis center of the non-diffraction propagation length of the target Bessel light beam coincides with the to-be-processed surface of the glass substrate to be processed, and after the target transverse axis center plane coincides with the to-be-processed surface of the glass substrate to be processed, the glass substrate to be processed is moved toward the emission direction of the target Bessel light beam by 1 / 2 of the thickness of the glass substrate to be processed, so that the target transverse axis center plane of the target transverse axis center of the non-diffraction propagation length of the target Bessel light beam coincides with the thickness center plane of the glass substrate to be processed.

8. The processing device according to claim 6, characterized in that: The device also includes: A CCD camera, wherein the CCD camera is configured to collect a diffraction topography image of a target Bessel light beam reflected by a surface to be processed of the glass to be processed; The industrial computer is also used to determine the relative horizontal axis center position of the non-diffraction propagation length of the target Bessel light beam; and to adjust the position of the to-be-processed surface of the glass substrate to be processed by adjusting the position of the displacement stage carrying the glass substrate to be processed, so that the to-be-processed surface of the glass substrate to be processed and the relative horizontal axis center plane of the relative horizontal axis center of the non-diffraction propagation length of the target Bessel light beam are initially coincident, the relative horizontal axis center plane; and to control the glass substrate to be processed to move at the position where the relative horizontal axis center plane and the to-be-processed surface of the glass substrate to be processed are initially coincident, and collect the diffraction morphology image of the target Bessel light beam reflected by the to-be-processed surface of the glass substrate to be processed through the configured CCD camera; and to analyze the collected diffraction morphology image of the target Bessel light beam, and when the morphology clarity and completeness of the collected diffraction morphology image of the target Bessel light beam meet predetermined conditions, it is determined that the to-be-processed surface of the glass substrate to be processed is coincident with the target horizontal axis center plane of the target horizontal axis center of the non-diffraction propagation length of the target Bessel light beam.

9. The processing device according to claim 6, characterized in that: The industrial computer is also used to compare the collected target Bessel beam diffraction morphology image with a predetermined comparison template. If the consistency result of the comparison meets a predetermined threshold range, it is determined that the morphology clarity and completeness of the target Bessel beam diffraction morphology image meet predetermined conditions.

10. The method according to claim 3, characterized in that: The device also includes: A light spot analyzer, wherein the light spot analyzer is configured to generate a Bessel light beam, and then focus the generated Bessel light beam through a focusing objective lens to obtain a target Bessel light beam, which can be irradiated on a target surface of the light spot analyzer, and collect focused light spot images of the target Bessel light beam at different positions of the focusing objective lens; The industrial computer is also used to control the movement of the focusing objective lens, perform spot morphology analysis based on the collected focused spot images of the target Bessel light beam at different positions of the focusing objective lens, record the first position of the focusing objective lens when the focused spot of the target Bessel light beam has a complete first morphology, and the second position of the focusing objective lens when the focused spot morphology of the target Bessel light beam is missing; and determine the center position of the first position and the second position as the relative horizontal axis center position of the diffraction-free propagation length of the target Bessel light beam.

Images