IC chip quartz substrate coating process with low film layer damage

Abstract

The invention discloses an IC chip quartz substrate coating process with low film layer damage, relates to the technical field of quartz substrate coating, and aims to solve the problem that a quartz substrate film layer is damaged due to the fact that the coating process is not rigorous. The production efficiency can be remarkably improved and the waste and loss in the coating process can be reduced by monitoring and adjusting the coating process in real time and optimizing the annealing process, and the coating process can be continuously optimized and the damage of the film layer to the substrate can be reduced by monitoring and analyzing the data, so that the performance and the reliability of the IC chip are improved, and the production cost is reduced. Through regular quality monitoring and evaluation, defects and potential problems in the process can be found in time, adjustment is carried out according to the film layer material of the target film coating quartz substrate, it can be ensured that the film coating process is matched with the characteristics of the film layer material, the optimal film coating effect is achieved accordingly, and according to the specific application requirements of the IC chip quartz substrate, the film coating quality is improved. And the performance of the film layer can be optimized by adjusting the parameters of the film coating environment.

Description

Technical Field

[0001] The invention relates to the technical field of quartz substrate coating, in particular to a quartz substrate coating process for an IC chip with low film damage. Background Art

[0002] In optical applications, coating can be used to improve the optical performance of lenses or other optical elements. The film layer can be used as a protective layer to prevent the substrate from being affected by the external environment. The coating can give the substrate new functionality. For example, the patent application with publication number CN117600033A discloses a quartz radiation-resistant coating process for quartz substrate production. The process mainly involves covering the surface of the quartz substrate with polyphenylene sulfide polymer material by spin coating. The radiation resistance of polyphenylene sulfide itself is used to increase the service life of the substrate in an irradiated environment and prevent the substrate from aging and yellowing due to the influence of radiation. The molecular chain of polyphenylene sulfide is composed of benzene rings connected by sulfur. The atoms are connected alternately, so that the Tr electrons of the benzene ring overlap partially, and the energy is further reduced to form a stable conjugated structure, in which the benzene ring structure gives polyphenylene sulfide rigidity, and the sulfide bond provides flexibility for polyphenylene sulfide. The composite material formed by the blending of polyphenylene sulfide and polytetrafluoroethylene contains high-energy carbon-fluorine bonds in the molecular structure of polytetrafluoroethylene, and there is a shielding effect formed by fluorine atoms outside the carbon chain, which makes it have excellent self-lubrication, electrical insulation, chemical stability, high and low temperature resistance, aging resistance and other advantages. Combining with polyphenylene sulfide can not only give play to the advantages of both, but also improve the shortcomings of polyphenylene sulfide, such as poor toughness, low mechanical strength and low wear resistance. Although the above patent solves the problem of quartz substrate coating, the following problems still exist in actual operation:

[0003] 1. The quartz substrate to be coated was not further processed and the film layer was not sputtered, which resulted in damage to the substrate during the subsequent coating.

[0004] 2. There is no further rigorous control over the equipment required for coating and the environment during coating, which leads to abnormalities in the coating process.

[0005] 3. The coating process of the quartz substrate is not monitored and adjusted in real time, and the quality of the coated quartz substrate is not further monitored, resulting in the final coating effect being unable to be controlled. Summary of the invention

[0006] The purpose of the present invention is to provide a film-layer-low-damage IC chip quartz substrate coating process. By real-time monitoring and immediate adjustment of the coating process, as well as optimization of the annealing process, the production efficiency can be significantly improved, and the waste and loss in the coating process can be reduced. By adjusting according to the film layer material of the target coated quartz substrate, it can be ensured that the coating process matches the characteristics of the film layer material, thereby obtaining the best coating effect. According to the specific application requirements of the IC chip quartz substrate, the performance of the film layer can be optimized by adjusting the coating environment parameters, which can solve the problems in the prior art.

[0007] To achieve the above object, the present invention provides the following technical solutions:

[0008] A film coating process for a quartz substrate of an IC chip with low film damage comprises the following steps:

[0009] S1: Quartz substrate pretreatment: cleaning and surface treatment of the quartz substrate to be coated, and obtaining the quartz substrate to be coated after cleaning and surface treatment;

[0010] S2: buffer layer pretreatment: the surface of the quartz substrate to be coated is subjected to buffer layer treatment, the buffer layer is a film layer between the surface of the quartz substrate to be coated and the coating film layer, and the target coated quartz substrate is obtained after the buffer layer treatment is completed;

[0011] S3: Coating equipment parameter setting: confirm the equipment for coating the target quartz substrate and set the parameters of each coating equipment;

[0012] S4: Coating environment adjustment: adjusting the coating environment of the target coated quartz substrate;

[0013] S5: Coating implementation monitoring: Real-time monitoring of the coating process of the target coated quartz substrate, and adjustment of the coating process according to the monitoring situation;

[0014] S6: Quartz substrate quality monitoring: After the target coated quartz substrate is coated, quality monitoring and evaluation are carried out, and the results of quality monitoring and evaluation are presented in the form of a quality inspection report.

[0015] Preferably, the cleaning and surface treatment of the quartz substrate to be coated in S1 includes:

[0016] The quartz substrate is cleaned by using an ultrasonic cleaning device, wherein the ultrasonic cleaning agent in the ultrasonic cleaning device is a mixed solution of isopropyl alcohol and deionized water, and the ratio of the mixed solution of isopropyl alcohol and deionized water is 1:1;

[0017] The cleaning time of the quartz substrate is 10-15 minutes, and the cleaning temperature is 40-60°C;

[0018] After the quartz substrate is cleaned in the ultrasonic cleaning equipment, it is dried in a vacuum oven. The drying time is 20-30 minutes, the drying temperature is 60-80℃, and the pressure in the oven should be less than 10 -3 Torr;

[0019] After the quartz substrate is dried, a plasma cleaning machine is used to activate the surface of the quartz substrate. The activation time is 5-10 minutes, and the plasma power of the plasma cleaning machine is 100-200W.

[0020] After the activation treatment is completed, a quartz substrate to be coated is obtained.

[0021] Preferably, the buffer layer treatment is performed on the surface of the quartz substrate to be coated in S2, including:

[0022] The buffer layer material is selected according to the application requirements of the quartz substrate to be coated, and the application requirements are retrieved from the database;

[0023] After the buffer layer material is selected, the buffer layer deposition method is confirmed;

[0024] After the buffer layer deposition method is confirmed, the deposition thickness is confirmed, and the deposition thickness is 10-100nm;

[0025] After the deposition thickness is confirmed, the deposition parameters are confirmed according to the deposition method. The deposition parameters include temperature, pressure, gas flow rate and time;

[0026] After the deposition parameters and deposition thickness are confirmed, the buffer layer material is used to perform surface treatment on the quartz substrate to be coated according to the deposition parameters and deposition thickness;

[0027] After the surface treatment is completed, it is cleaned and dried;

[0028] After cleaning and drying, the target coated quartz substrate is obtained.

[0029] Preferably, confirming the equipment for coating the target coated quartz substrate in S3 includes:

[0030] Before coating the target quartz substrate, confirm the equipment required for coating;

[0031] The coating equipment is selected according to the film material and application requirements of the target coated quartz substrate, and the film material and application requirements are retrieved from the database;

[0032] The coating equipment includes physical vapor deposition equipment or chemical vapor deposition equipment. The physical vapor deposition equipment includes evaporation coating machine and sputtering coating machine.

[0033] After the coating equipment is confirmed, the coating equipment will be tested for functionality;

[0034] Functional testing of evaporation coating machines includes vacuum system testing, heating system testing, material source monitoring, and film thickness monitoring;

[0035] Functional testing of sputtering coaters includes vacuum system testing, target material testing, plasma generation, film thickness monitoring and uniformity testing;

[0036] Functional testing of chemical vapor deposition equipment includes gas delivery testing, reaction chamber testing, temperature testing, pressure testing, deposition rate testing, and uniformity testing;

[0037] After the chemical vapor deposition equipment, evaporation coating machine and sputtering coating machine are inspected and tested, parameters are set.

[0038] Preferably, confirming the equipment for coating the target coated quartz substrate in S3 further includes:

[0039] The parameter settings of the evaporation coating machine include: vacuum system pressure is 10 -5 Torr or less, the heating temperature is 200℃-1200℃, and the evaporation rate is 10-100A;

[0040] The parameter settings of the sputtering coating machine include: vacuum system pressure is 10 -3 Torr to 10 -5 Torr, gas flow rate is 10-100sccm;

[0041] The parameter settings of the chemical vapor deposition equipment include: temperature of 300°C-900°C, pressure of 0.1 to 10 Torr, and deposition rate of 0.1 to 10 nm / min;

[0042] At the same time, the equipment parameters are adjusted according to the film material and application requirements of the target coated quartz substrate.

[0043] Preferably, adjusting the environment for coating the target coated quartz substrate in S4 includes:

[0044] The coating environment data of the target coated quartz substrate includes temperature data, pressure data, gas flow data, humidity data and cleanliness data;

[0045] The parameter range of the temperature data of the coating environment is 300℃ to 900℃, the parameter range of the pressure data is 0.1 to 10Torr, the parameter range of the gas flow data is set according to the requirements of the physical vapor deposition process or the chemical vapor deposition process, the parameter range of the humidity data is less than 50% relative humidity, and the cleanliness data is maintained at ISO Class 5 or higher clean room standards;

[0046] At the same time, the environmental parameters are adjusted according to the film material and application requirements of the target coated quartz substrate.

[0047] Preferably, the coating process of the target coated quartz substrate in S5 is monitored in real time, and the coating process is adjusted according to the monitoring situation, including:

[0048] After the environmental parameters and equipment parameters are adjusted, the target coated quartz substrate is coated;

[0049] During the coating process of the target coated quartz substrate, the coating process data is recorded in real time;

[0050] The coating process data includes real-time film thickness data, real-time temperature data, real-time pressure data, real-time gas flow data and real-time plasma data;

[0051] Real-time film thickness data: The film thickness is measured in real time by the film thickness monitoring instrument;

[0052] Real-time temperature data monitors the temperature of the target coated quartz substrate and equipment in real time during the coating process through infrared sensors;

[0053] Real-time pressure data monitors the pressure value in the coating chamber in real time through the pressure sensor;

[0054] Real-time gas flow data monitors gas flow in real time through mass flow controllers;

[0055] Real-time plasma data monitors the characteristics and concentration of the plasma in real time through a plasma emission spectrometer;

[0056] After the coating process data monitoring is completed, the quartz substrate coating data is obtained.

[0057] Preferably, the coating process of the target coated quartz substrate is monitored in real time in S5, and the coating process is adjusted according to the monitoring situation, and further includes:

[0058] Check the quartz substrate coating data for abnormalities;

[0059] Abnormality detection is to compare the real-time monitored quartz substrate coating data with the preset set value;

[0060] Data comparison is to convert the real-time monitored quartz substrate coating data into curve data with the preset setting value;

[0061] After the curve data conversion is completed, the curve data is overlapped;

[0062] When the curve data overlap, if the curve data of the quartz substrate coating data monitored in real time does not overlap with the curve data of the preset set value, the quartz substrate coating data monitored in real time is marked as abnormal data;

[0063] Perform abnormal value conversion based on the blank area without overlapping areas;

[0064] After the abnormal value conversion is completed, the abnormal threshold of the abnormal data is obtained;

[0065] Adjust the corresponding equipment parameters according to the abnormal threshold;

[0066] After the corresponding equipment parameters are adjusted, the coating process continues to be monitored in real time;

[0067] After the target coated quartz substrate is coated, the film layer is annealed. The film layer annealing temperature is 400° C. to 600° C., and the annealing time is 1-2 hours.

[0068] Preferably, quality monitoring and evaluation are performed on the target coated quartz substrate in S6 after coating is completed, and the results of the quality monitoring and evaluation are presented in the form of a quality inspection report, including:

[0069] Quality monitoring is performed after the target coated quartz substrate is annealed;

[0070] Quality monitoring includes surface quality inspection, film thickness measurement, physical property testing and optical property testing;

[0071] The surface quality test is to use a surface profiler to measure the roughness and profile of the target coated quartz substrate surface;

[0072] The thickness measurement is to use ellipsometer to measure the film thickness and optical properties of the target coated quartz substrate;

[0073] Physical property testing uses nanoindentation, scratch tester and thermal analysis instrument to measure the hardness, elastic modulus, adhesion and thermal properties of the target coated quartz substrate film;

[0074] The optical performance test is to measure the transmittance and reflectivity of the target coated quartz substrate using a spectrophotometer.

[0075] Preferably, after the target coated quartz substrate in S6 is coated, quality monitoring and evaluation are performed, and the results of the quality monitoring and evaluation are presented in the form of a quality inspection report, which also includes:

[0076] Sorting and preprocessing the quality monitoring data of the target coated quartz substrate;

[0077] Then, the target coated quartz substrate that has completed data sorting and data preprocessing is subjected to data analysis. The data analysis is to compare the index tolerance range of the quality monitoring data with the process specification requirements. The process specification requirements are retrieved from the database;

[0078] The data analysis data is converted into graphic and text form, and a quality inspection report is obtained after the conversion is completed.

[0079] Compared with the prior art, the present invention has the following beneficial effects:

[0080] 1. The present invention provides a film-layer-low-damage IC chip quartz substrate coating process. After cleaning and surface treatment, the pollutants on the surface of the quartz substrate are completely removed, and the surface activity and cleanliness are significantly improved, which helps to improve the quality and effect of the coating. By accurately controlling the parameters and conditions of each step, low-damage treatment of the surface of the quartz substrate is achieved. This helps to maintain the original performance of the quartz substrate and improve the overall performance after coating.

[0081] 2. The present invention provides a film-layer-low-damage IC chip quartz substrate coating process, which can ensure good bonding between the coating layer and the substrate while maintaining the integrity and performance of the film layer based on equipment selection and matching, function detection, parameter setting and adjustment, and by adjusting according to the film layer material of the target coated quartz substrate, it can ensure that the coating process matches the characteristics of the film layer material, thereby obtaining the best coating effect. According to the specific application requirements of the IC chip quartz substrate, the performance of the film layer can be optimized by adjusting the coating environment parameters.

[0082] 3. The present invention provides a film-layer-low-damage IC chip quartz substrate coating process, which can significantly improve production efficiency and reduce waste and loss in the coating process by real-time monitoring and immediate adjustment of the coating process and optimization of the annealing process. By monitoring and analyzing these data, the coating process can be continuously optimized to reduce the damage of the film layer to the substrate, thereby improving the performance and reliability of the IC chip. Through regular quality monitoring and evaluation, deficiencies and potential problems in the process can be discovered in a timely manner. BRIEF DESCRIPTION OF THE DRAWINGS

[0083] Figure 1 It is a schematic diagram of the IC chip quartz substrate coating steps of the present invention;

[0084] Figure 2 It is a schematic diagram of the IC chip quartz substrate coating process of the present invention. DETAILED DESCRIPTION

[0085] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0086] In order to solve the problem in the prior art that the quartz substrate to be coated is not further processed and the film layer is not sputtered, which leads to damage to the substrate during the subsequent coating, please refer to Figure 1and Figure 2 , this embodiment provides the following technical solutions:

[0087] A film coating process for a quartz substrate of an IC chip with low film damage comprises the following steps:

[0088] S1: Quartz substrate pretreatment: cleaning and surface treatment of the quartz substrate to be coated, and obtaining the quartz substrate to be coated after cleaning and surface treatment;

[0089] Among them, after cleaning and surface treatment, the pollutants on the surface of the quartz substrate are completely removed, and the surface activity and cleanliness are significantly improved;

[0090] S2: buffer layer pretreatment: the surface of the quartz substrate to be coated is subjected to buffer layer treatment, the buffer layer is a film layer between the surface of the quartz substrate to be coated and the coating film layer, and the target coated quartz substrate is obtained after the buffer layer treatment is completed;

[0091] Among them, low damage treatment of the quartz substrate surface is achieved by precisely controlling the parameters and conditions of each step;

[0092] S3: Coating equipment parameter setting: confirm the equipment for coating the target quartz substrate and set the parameters of each coating equipment;

[0093] Among them, a detailed parameter setting plan is formulated for different coating equipment, and the equipment parameters are adjusted according to the film material and application requirements of the target coated quartz substrate, which can optimize the coating process and further reduce the possibility of film damage;

[0094] S4: Coating environment adjustment: adjusting the coating environment of the target coated quartz substrate;

[0095] Among them, by adjusting according to the film material of the target coated quartz substrate, it can be ensured that the coating process matches the characteristics of the film material;

[0096] S5: Coating implementation monitoring: Real-time monitoring of the coating process of the target coated quartz substrate, and adjustment of the coating process according to the monitoring situation;

[0097] Among them, by real-time monitoring and immediate adjustment of the coating process, as well as optimization of the annealing process, production efficiency can be significantly improved and waste and loss in the coating process can be reduced;

[0098] S6: Quartz substrate quality monitoring: After the target coated quartz substrate is coated, quality monitoring and evaluation are carried out, and the results of quality monitoring and evaluation are presented in the form of a quality inspection report;

[0099] Among them, by monitoring and analyzing these data, the coating process can be continuously optimized to reduce the damage of the film layer to the substrate, thereby improving the performance and reliability of the IC chip.

[0100] Cleaning and surface preparation of the quartz substrates to be coated in S1, including:

[0101] The quartz substrate is cleaned by using an ultrasonic cleaning device, wherein the ultrasonic cleaning agent in the ultrasonic cleaning device is a mixed solution of isopropyl alcohol and deionized water, and the ratio of the mixed solution of isopropyl alcohol and deionized water is 1:1;

[0102] The cleaning time of the quartz substrate is 10-15 minutes, and the cleaning temperature is 40-60°C;

[0103] After the quartz substrate is cleaned in the ultrasonic cleaning equipment, it is dried in a vacuum oven. The drying time is 20-30 minutes, the drying temperature is 60-80℃, and the pressure in the oven should be less than 10 -3 Torr;

[0104] After the quartz substrate is dried, a plasma cleaning machine is used to activate the surface of the quartz substrate. The activation time is 5-10 minutes, and the plasma power of the plasma cleaning machine is 100-200W.

[0105] After the activation treatment is completed, a quartz substrate to be coated is obtained.

[0106] Specifically, the use of ultrasonic cleaning equipment combined with a mixed solution of isopropyl alcohol and deionized water (ratio of 1:1) for cleaning can effectively remove various pollutants on the surface of the quartz substrate, such as fine particles, grease, dust, etc. The cavitation effect of ultrasound can produce strong microjets and shock waves, effectively stripping and dispersing pollutants and improving cleaning efficiency. The cleaning temperature is 40-60°C, which can ensure the cleaning effect and avoid thermal damage to the quartz substrate. The drying temperature is 60-80°C, which can quickly remove moisture and maintain the stability of the quartz substrate. The vacuum oven is used for drying, and the pressure in the oven is less than 10 -3 Torr, which can ensure that the water is quickly vaporized at low temperature and pumped away by the vacuum pump to achieve low-temperature drying. Using a plasma cleaner to activate the surface of the quartz substrate can improve the cleanliness and activity of the surface, which is helpful to form a good bonding force between the coating layer and the substrate. The activation treatment time is 5-10 minutes, and the plasma power is 100-200W, which can ensure the treatment effect while avoiding excessive damage to the quartz substrate. After cleaning and surface treatment, the pollutants on the surface of the quartz substrate are completely removed, and the surface activity and cleanliness are significantly improved, which helps to improve the quality and effect of the coating.

[0107] In S2, the surface of the quartz substrate to be coated is treated with a buffer layer, including:

[0108] The buffer layer material is selected according to the application requirements of the quartz substrate to be coated, and the application requirements are retrieved from the database; the buffer layer materials include but are not limited to silicon oxide and silicon nitride;

[0109] After the buffer layer material is selected, the buffer layer deposition method is confirmed; the buffer layer deposition method includes chemical vapor deposition or physical vapor deposition;

[0110] After the buffer layer deposition method is confirmed, the deposition thickness is confirmed, and the deposition thickness is 10-100nm;

[0111] After the deposition thickness is confirmed, the deposition parameters are confirmed according to the deposition method. The deposition parameters include temperature, pressure, gas flow rate and time;

[0112] After the deposition parameters and deposition thickness are confirmed, the buffer layer material is used to perform surface treatment on the quartz substrate to be coated according to the deposition parameters and deposition thickness;

[0113] After the surface treatment is completed, cleaning and drying are performed; the cleaning and drying process refers to step S1;

[0114] After cleaning and drying, the target coated quartz substrate is obtained.

[0115] Specifically, the relevant information is retrieved from the database according to the specific application requirements of the quartz substrate to be coated, and the buffer layer material is selected accordingly. This highly customized processing method can ensure that the prepared coated quartz substrate meets specific performance requirements, thereby improving the applicability and market competitiveness of the product. The buffer layer material has a wide range of choices, including but not limited to silicon oxide and silicon nitride. These materials have good physical and chemical properties and can meet the needs of different application scenarios. At the same time, it also provides more possibilities for process optimization and performance improvement. The buffer layer deposition methods include chemical vapor deposition (CVD) and physical vapor deposition (PVD) and other methods. These deposition methods have their own characteristics and can be selected according to different material properties and process requirements to ensure the stability and reliability of the coating quality. By accurately controlling the deposition thickness (10-100nm), the performance of the coated quartz substrate can be finely controlled. This precise control helps to optimize the performance parameters of the product, such as hardness, wear resistance, corrosion resistance, etc., thereby improving the service life and reliability of the product. The confirmation of deposition parameters includes temperature, pressure, gas flow rate and time. By optimizing these parameters, the quality and efficiency of the coating can be further improved. At the same time, it also helps to reduce production costs and energy consumption, and achieves low damage treatment of the quartz substrate surface by precisely controlling the parameters and conditions of each step. This helps to maintain the original properties of the quartz substrate and improve the overall performance after coating.

[0116] In order to solve the problem that the existing technology does not have further rigorous control over the equipment and environment required for coating, which leads to abnormalities in the coating process, please refer to Figure 1 and Figure 2 , this embodiment provides the following technical solutions:

[0117] Confirm the equipment used to coat the target coated quartz substrate in S3, including:

[0118] Before coating the target quartz substrate, confirm the equipment required for coating;

[0119] The coating equipment is selected according to the film material and application requirements of the target coated quartz substrate, and the film material and application requirements are retrieved from the database;

[0120] The coating equipment includes physical vapor deposition equipment or chemical vapor deposition equipment. The physical vapor deposition equipment includes evaporation coating machine and sputtering coating machine.

[0121] After the coating equipment is confirmed, the coating equipment will be tested for functionality;

[0122] Functional testing of evaporation coating machines includes vacuum system testing, heating system testing, material source monitoring, and film thickness monitoring;

[0123] Functional testing of sputtering coaters includes vacuum system testing, target material testing, plasma generation, film thickness monitoring and uniformity testing;

[0124] Functional testing of chemical vapor deposition equipment includes gas delivery testing, reaction chamber testing, temperature testing, pressure testing, deposition rate testing, and uniformity testing;

[0125] After the chemical vapor deposition equipment, evaporation coating machine and sputtering coating machine are inspected and tested, parameters are set.

[0126] The parameter settings of the evaporation coating machine include: vacuum system pressure is 10 -5 Torr or less, the heating temperature is 200℃-1200℃, and the evaporation rate is 10-100A;

[0127] The parameter settings of the sputtering coating machine include: vacuum system pressure is 10 -3 Torr to 10 -5 Torr, gas flow rate is 10-100sccm;

[0128] The parameter settings of the chemical vapor deposition equipment include: temperature of 300°C-900°C, pressure of 0.1 to 10 Torr, and deposition rate of 0.1 to 10 nm / min;

[0129] At the same time, the equipment parameters are adjusted according to the film material and application requirements of the target coated quartz substrate.

[0130] Specifically, according to the film material and application requirements of the target coated quartz substrate, relevant information is retrieved from the database to accurately select the coating equipment. This customized equipment selection method can ensure that the coating process is highly matched with the required film properties and reduce the risk of film damage. Both physical vapor deposition equipment (such as evaporation coating machines and sputtering coating machines) and chemical vapor deposition equipment have undergone comprehensive functional testing. This ensures that the equipment can operate stably during the coating process and reduces film damage caused by equipment failure. Detailed parameter setting plans are formulated for different coating equipment, and equipment parameters are adjusted according to the film material and application requirements of the target coated quartz substrate. This fine parameter control can optimize the coating process and further reduce the possibility of film damage. Through the above-mentioned equipment selection and matching, functional testing, and parameter setting and adjustment measures, this solution provides a low-damage coating process for IC chip quartz substrates. This process can ensure a good combination of the coating layer and the substrate while maintaining the integrity and performance of the film layer. Due to the accuracy of equipment selection and matching, the comprehensiveness of functional testing, and the precision of parameter setting, this solution can significantly improve the coating quality and reduce the defective product rate. At the same time, a stable coating process also helps to improve production efficiency and reduce production costs.

[0131] Adjust the environment for coating the target coated quartz substrate in S4, including:

[0132] The coating environment data of the target coated quartz substrate includes temperature data, pressure data, gas flow data, humidity data and cleanliness data;

[0133] The parameter range of the temperature data of the coating environment is 300℃ to 900℃, the parameter range of the pressure data is 0.1 to 10Torr, the parameter range of the gas flow data is set according to the requirements of the physical vapor deposition process or the chemical vapor deposition process, the parameter range of the humidity data is less than 50% relative humidity, and the cleanliness data is maintained at ISO Class 5 or higher clean room standards;

[0134] At the same time, the environmental parameters are adjusted according to the film material and application requirements of the target coated quartz substrate.

[0135] Specifically, the temperature data parameter range of the coating environment is set to 300°C to 900°C. This range helps to ensure the correct melting and evaporation of the material during the coating process, thereby improving the quality and uniformity of the coating. The high temperature environment can also promote the bonding between the film layer and the quartz substrate and reduce the risk of the film layer falling off. The pressure data parameter range is set to 0.1 to 10Torr (about 1.33×10 -3 To 1.33Pa), this range helps to control the gas dynamics behavior during the coating process and reduce the scattering and contamination of the gas on the film layer. At the same time, a lower pressure environment can reduce the loss of evaporated materials during the transmission process and improve the coating efficiency. The gas flow data parameter range is set according to the requirements of the physical vapor deposition (PVD) or chemical vapor deposition (CVD) process to ensure that the gas composition and proportion required in the coating process are precisely controlled, which helps to form a uniform and dense film layer and reduce defects and pores in the film layer. The humidity data parameter range is set to a relative humidity of less than 50%. This condition helps to reduce the interference of moisture in the coating process and prevent the film layer from hydrolysis, oxidation and other adverse reactions. At the same time, lower humidity can also reduce the corrosive gas in the coating room and extend the service life of the coating equipment. Different film materials have different requirements for the coating environment. By adjusting the film material of the target coated quartz substrate, it is possible to ensure that the coating process matches the characteristics of the film material, thereby obtaining the best coating effect. According to the specific application requirements of the IC chip quartz substrate (such as wear resistance, corrosion resistance, conductivity, etc.), the film performance can be optimized by adjusting the coating environment parameters. This helps to meet the diverse needs of IC chip quartz substrate coating products in different fields.

[0136] In order to solve the problem in the prior art that the coating process of the quartz substrate is not monitored and adjusted in real time, and the quality of the quartz substrate after coating is not further monitored, which leads to the problem that the final coating effect cannot be adjusted, please refer to Figure 1 and Figure 2 , this embodiment provides the following technical solutions:

[0137] The coating process of the target coated quartz substrate in S5 is monitored in real time, and the coating process is adjusted according to the monitoring situation, including:

[0138] After the environmental parameters and equipment parameters are adjusted, the target coated quartz substrate is coated;

[0139] During the coating process of the target coated quartz substrate, the coating process data is recorded in real time;

[0140] The coating process data includes real-time film thickness data, real-time temperature data, real-time pressure data, real-time gas flow data and real-time plasma data;

[0141] Real-time film thickness data: The film thickness is measured in real time by the film thickness monitoring instrument;

[0142] Real-time temperature data monitors the temperature of the target coated quartz substrate and equipment in real time during the coating process through infrared sensors;

[0143] Real-time pressure data monitors the pressure value in the coating chamber in real time through the pressure sensor;

[0144] Real-time gas flow data monitors gas flow in real time through mass flow controllers;

[0145] Real-time plasma data monitors the characteristics and concentration of the plasma in real time through a plasma emission spectrometer;

[0146] After the coating process data monitoring is completed, the quartz substrate coating data is obtained.

[0147] Specifically, by measuring the thickness of the film layer in real time through the film thickness monitoring instrument, it can be ensured that the film layer thickness meets the predetermined requirements and maintains good uniformity, which is crucial to the performance of the IC chip. In addition to the film thickness, the temperature, pressure, gas flow and plasma data are also monitored in real time, which can fully reflect the actual state of the coating process and provide a basis for accurately adjusting the coating parameters. According to the real-time monitoring data, the operator can adjust the coating parameters in time, such as increasing or decreasing the sputtering time, adjusting the evaporation rate, etc., so as to optimize the coating process and ensure the quality of the film layer. Through continuous monitoring and parameter adjustment, the uncertainty in the coating process can be significantly reduced, and the stability and repeatability of the process can be improved, which is particularly critical for large-scale production. Real-time monitoring and precise control of coating parameters can help reduce damage to the film layer during the coating process, such as scratches, contamination, etc., thereby ensuring the high quality of the film layer. By optimizing the coating process and parameters, it can be ensured that the film layer has excellent physical and chemical properties, such as high hardness, high wear resistance, high corrosion resistance, etc., which is crucial for the long-term stable operation of the IC chip. The realization of real-time monitoring and automatic adjustment of parameters can help improve the intelligence and automation level of coating equipment and reduce the cost and error of manual intervention.

[0148] Check the quartz substrate coating data for abnormalities;

[0149] Abnormality detection is to compare the real-time monitored quartz substrate coating data with the preset set value;

[0150] Data comparison is to convert the real-time monitored quartz substrate coating data into curve data with the preset setting value;

[0151] After the curve data conversion is completed, the curve data is overlapped;

[0152] When the curve data overlap, if the curve data of the quartz substrate coating data monitored in real time does not overlap with the curve data of the preset set value, the quartz substrate coating data monitored in real time is marked as abnormal data;

[0153] Perform abnormal value conversion based on the blank area without overlapping areas;

[0154] After the abnormal value conversion is completed, the abnormal threshold of the abnormal data is obtained;

[0155] Adjust the corresponding equipment parameters according to the abnormal threshold;

[0156] After the corresponding equipment parameters are adjusted, the coating process continues to be monitored in real time;

[0157] After the target coated quartz substrate is coated, the film layer is annealed. The film layer annealing temperature is 400° C. to 600° C., and the annealing time is 1-2 hours.

[0158] Specifically, the abnormality troubleshooting process can accurately identify the difference between the real-time monitoring data and the preset setting value through numerical comparison and curve data conversion. This precise positioning capability helps to quickly find the problem and provide strong support for the subsequent equipment parameter adjustment. The curve data overlap method makes the comparison of coating data more intuitive. Through the display of the curve chart, the operator can see the difference between the real-time monitoring data and the preset setting value at a glance, so that it is easier to make judgments and decisions. According to the abnormal threshold, the corresponding equipment parameter adjustment can realize the dynamic control of the coating process. This flexibility helps to adapt to the changes in different coating requirements and conditions, ensure the stability and reliability of the coating quality, and the film annealing process carried out after the target coating quartz substrate is coated. By setting a reasonable annealing temperature and annealing time, it helps to further reduce the damage of the film layer and improve the stability and reliability of the film layer. This process optimization measure helps to improve the performance and service life of the IC chip. By real-time monitoring and immediate adjustment of the coating process, as well as optimizing the annealing process, it can significantly improve production efficiency and reduce waste and loss in the coating process. At the same time, this refined management also helps to reduce production costs and improve the competitiveness of enterprises.

[0159] After the coating of the target coated quartz substrate in S6 is completed, quality monitoring and evaluation are carried out, and the results of quality monitoring and evaluation are presented in the form of a quality inspection report, including:

[0160] Quality monitoring is performed after the target coated quartz substrate is annealed;

[0161] Quality monitoring includes surface quality inspection, film thickness measurement, physical property testing and optical property testing;

[0162] The surface quality test is to use a surface profiler to measure the roughness and profile of the target coated quartz substrate surface;

[0163] The thickness measurement is to use ellipsometer to measure the film thickness and optical properties of the target coated quartz substrate;

[0164] Physical property testing uses nanoindentation, scratch tester and thermal analysis instrument to measure the hardness, elastic modulus, adhesion and thermal properties of the target coated quartz substrate film;

[0165] The optical performance test is to measure the transmittance and reflectivity of the target coated quartz substrate using a spectrophotometer.

[0166] Sorting and preprocessing the quality monitoring data of the target coated quartz substrate;

[0167] Then, the target coated quartz substrate that has completed data sorting and data preprocessing is subjected to data analysis. The data analysis is to compare the index tolerance range of the quality monitoring data with the process specification requirements. The process specification requirements are retrieved from the database;

[0168] The data analysis data is converted into graphic and text form, and a quality inspection report is obtained after the conversion is completed.

[0169] Specifically, based on surface quality inspection, film thickness measurement, physical property test and optical property test, etc., a comprehensive evaluation of the coating quality of the target coated quartz substrate is ensured. This comprehensive monitoring helps to timely discover and solve potential quality problems. High-precision instruments such as surface profiler, ellipsometer, nanoindenter, scratch tester, thermal analysis instrument and spectrophotometer are used for measurement to ensure the accuracy and reliability of the measurement results. This helps to accurately evaluate the quality of the coating and provide a solid foundation for subsequent data analysis and process improvement. By sorting and preprocessing the quality monitoring data, and then analyzing the data, the quality monitoring data is compared with the process specification requirements for the indicator tolerance range to ensure the accuracy and scientificity of the analysis. This helps to timely discover deviations in the process and provide strong support for process optimization. The data analysis results are converted into graphic form to generate intuitive quality inspection reports, making the results of quality monitoring and evaluation easier to understand and accept. This helps relevant personnel quickly understand the quality status of the coating and make decisions in a timely manner. Physical property tests and optical property tests can evaluate the degree of damage that the coating may cause to the IC chip quartz substrate. By monitoring and analyzing these data, the coating process can be continuously optimized to reduce the damage of the film layer to the substrate, thereby improving the performance and reliability of the IC chip. Through regular quality monitoring and evaluation, deficiencies and potential problems in the process can be discovered in a timely manner. This helps relevant personnel take timely measures to improve and optimize the process and improve coating quality and production efficiency.

[0170] It should be noted that, in this article, relational terms such as first and second, etc. are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Moreover, the terms "include", "comprise" or any other variants thereof are intended to cover non-exclusive inclusion, so that a process, method, article or device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, article or device.

[0171] While the embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that many changes, modifications, substitutions and variations can be made to the embodiments without departing from the principles and spirit of the invention.

Claims

1. A film coating process for IC chip quartz substrate with low film damage, characterized in that: The steps include: S1: Quartz substrate pretreatment: cleaning and surface treatment of the quartz substrate to be coated, and obtaining the quartz substrate to be coated after cleaning and surface treatment; S2: buffer layer pretreatment: the surface of the quartz substrate to be coated is subjected to buffer layer treatment, the buffer layer is a film layer between the surface of the quartz substrate to be coated and the coating film layer, and the target coated quartz substrate is obtained after the buffer layer treatment is completed; S3: Coating equipment parameter setting: confirm the equipment for coating the target quartz substrate and set the parameters of each coating equipment; S4: Coating environment adjustment: adjusting the coating environment of the target coated quartz substrate; S5: Coating implementation monitoring: Real-time monitoring of the coating process of the target coated quartz substrate, and adjustment of the coating process according to the monitoring situation; S6: Quartz substrate quality monitoring: After the target coated quartz substrate is coated, quality monitoring and evaluation are carried out, and the results of quality monitoring and evaluation are presented in the form of a quality inspection report.

2. The IC chip quartz substrate coating process with low film damage according to claim 1, characterized in that: Cleaning and surface preparation of the quartz substrates to be coated in S1, including: The quartz substrate is cleaned by using an ultrasonic cleaning device, wherein the ultrasonic cleaning agent in the ultrasonic cleaning device is a mixed solution of isopropyl alcohol and deionized water, and the ratio of the mixed solution of isopropyl alcohol and deionized water is 1:1; The cleaning time of the quartz substrate is 10-15 minutes, and the cleaning temperature is 40-60°C; After the quartz substrate is cleaned in the ultrasonic cleaning equipment, it is dried in a vacuum oven. The drying time is 20-30 minutes, the drying temperature is 60-80℃, and the pressure in the oven should be less than 10 -3 Torr; After the quartz substrate is dried, a plasma cleaning machine is used to activate the surface of the quartz substrate. The activation time is 5-10 minutes, and the plasma power of the plasma cleaning machine is 100-200W. After the activation treatment is completed, a quartz substrate to be coated is obtained.

3. The IC chip quartz substrate coating process with low film damage according to claim 2, characterized in that: In S2, the surface of the quartz substrate to be coated is treated with a buffer layer, including: The buffer layer material is selected according to the application requirements of the quartz substrate to be coated, and the application requirements are retrieved from the database; After the buffer layer material is selected, the buffer layer deposition method is confirmed; After the buffer layer deposition method is confirmed, the deposition thickness is confirmed, and the deposition thickness is 10-100nm; After the deposition thickness is confirmed, the deposition parameters are confirmed according to the deposition method. The deposition parameters include temperature, pressure, gas flow rate and time; After the deposition parameters and deposition thickness are confirmed, the buffer layer material is used to perform surface treatment on the quartz substrate to be coated according to the deposition parameters and deposition thickness; After the surface treatment is completed, it is cleaned and dried; After cleaning and drying, the target coated quartz substrate is obtained.

4. The IC chip quartz substrate coating process with low film damage according to claim 3, characterized in that: Confirm the equipment used to coat the target coated quartz substrate in S3, including: Before coating the target quartz substrate, confirm the equipment required for coating; The coating equipment is selected according to the film material and application requirements of the target coated quartz substrate, and the film material and application requirements are retrieved from the database; The coating equipment includes physical vapor deposition equipment or chemical vapor deposition equipment. The physical vapor deposition equipment includes evaporation coating machine and sputtering coating machine. After the coating equipment is confirmed, the coating equipment will be tested for functionality; Functional testing of evaporation coating machines includes vacuum system testing, heating system testing, material source monitoring, and film thickness monitoring; Functional testing of sputtering coaters includes vacuum system testing, target material testing, plasma generation, film thickness monitoring and uniformity testing; Functional testing of chemical vapor deposition equipment includes gas delivery testing, reaction chamber testing, temperature testing, pressure testing, deposition rate testing, and uniformity testing; After the chemical vapor deposition equipment, evaporation coating machine and sputtering coating machine are inspected and tested, parameters are set.

5. The IC chip quartz substrate coating process with low film damage according to claim 4, characterized in that: Confirmation of the equipment for coating the target coated quartz substrate in S3 also includes: The parameter settings of the evaporation coating machine include: vacuum system pressure is 10 -5 Torr or less, the heating temperature is 200℃-1200℃, and the evaporation rate is 10-100A; The parameter settings of the sputtering coating machine include: vacuum system pressure is 10 -3 Torr to 10 -5 Torr, gas flow rate is 10-100sccm; The parameter settings of the chemical vapor deposition equipment include: temperature of 300°C-900°C, pressure of 0.1 to 10 Torr, and deposition rate of 0.1 to 10 nm / min; At the same time, the equipment parameters are adjusted according to the film material and application requirements of the target coated quartz substrate.

6. The IC chip quartz substrate coating process with low film damage according to claim 5, characterized in that: Adjust the environment for coating the target coated quartz substrate in S4, including: The coating environment data of the target coated quartz substrate includes temperature data, pressure data, gas flow data, humidity data and cleanliness data; The parameter range of the temperature data of the coating environment is 300℃ to 900℃, the parameter range of the pressure data is 0.1 to 10Torr, the parameter range of the gas flow data is set according to the requirements of the physical vapor deposition process or the chemical vapor deposition process, the parameter range of the humidity data is less than 50% relative humidity, and the cleanliness data is maintained at ISO Class 5 or higher clean room standards; At the same time, the environmental parameters are adjusted according to the film material and application requirements of the target coated quartz substrate.

7. The IC chip quartz substrate coating process with low film damage according to claim 6, characterized in that: The coating process of the target coated quartz substrate in S5 is monitored in real time, and the coating process is adjusted according to the monitoring situation, including: After the environmental parameters and equipment parameters are adjusted, the target coated quartz substrate is coated; During the coating process of the target coated quartz substrate, the coating process data is recorded in real time; The coating process data includes real-time film thickness data, real-time temperature data, real-time pressure data, real-time gas flow data and real-time plasma data; Real-time film thickness data: The film thickness is measured in real time by the film thickness monitoring instrument; Real-time temperature data monitors the temperature of the target coated quartz substrate and equipment in real time during the coating process through infrared sensors; Real-time pressure data monitors the pressure value in the coating chamber in real time through the pressure sensor; Real-time gas flow data monitors gas flow in real time through mass flow controllers; Real-time plasma data monitors the characteristics and concentration of the plasma in real time through a plasma emission spectrometer; After the coating process data monitoring is completed, the quartz substrate coating data is obtained.

8. The IC chip quartz substrate coating process with low film damage according to claim 7, characterized in that: The coating process of the target coated quartz substrate in S5 is monitored in real time, and the coating process is adjusted according to the monitoring situation, and also includes: Check the quartz substrate coating data for abnormalities; Abnormality detection is to compare the real-time monitored quartz substrate coating data with the preset set value; Data comparison is to convert the real-time monitored quartz substrate coating data into curve data with the preset setting value; After the curve data conversion is completed, the curve data is overlapped; When the curve data overlap, if the curve data of the quartz substrate coating data monitored in real time does not overlap with the curve data of the preset set value, the quartz substrate coating data monitored in real time is marked as abnormal data; Perform abnormal value conversion based on the blank area without overlapping areas; After the abnormal value conversion is completed, the abnormal threshold of the abnormal data is obtained; Adjust the corresponding equipment parameters according to the abnormal threshold; After the corresponding equipment parameters are adjusted, the coating process continues to be monitored in real time; After the target coated quartz substrate is coated, the film layer is annealed. The film layer annealing temperature is 400° C. to 600° C., and the annealing time is 1-2 hours.

9. The IC chip quartz substrate coating process with low film damage according to claim 8, characterized in that: After the coating of the target coated quartz substrate in S6 is completed, quality monitoring and evaluation are carried out, and the results of quality monitoring and evaluation are presented in the form of a quality inspection report, including: Quality monitoring is performed after the target coated quartz substrate is annealed; Quality monitoring includes surface quality inspection, film thickness measurement, physical property testing and optical property testing; The surface quality test is to use a surface profiler to measure the roughness and profile of the target coated quartz substrate surface; The thickness measurement is to use ellipsometer to measure the film thickness and optical properties of the target coated quartz substrate; Physical property testing uses nanoindentation, scratch tester and thermal analysis instrument to measure the hardness, elastic modulus, adhesion and thermal properties of the target coated quartz substrate film; The optical performance test is to measure the transmittance and reflectivity of the target coated quartz substrate using a spectrophotometer.

10. The IC chip quartz substrate coating process with low film damage according to claim 9, characterized in that: After the coating of the target coated quartz substrate in S6 is completed, quality monitoring and evaluation are carried out, and the results of quality monitoring and evaluation are presented in the form of a quality inspection report, which also includes: Sorting and preprocessing the quality monitoring data of the target coated quartz substrate; Then, the target coated quartz substrate that has completed data sorting and data preprocessing is subjected to data analysis. The data analysis is to compare the index tolerance range of the quality monitoring data with the process specification requirements. The process specification requirements are retrieved from the database; The data analysis data is converted into graphic and text form, and a quality inspection report is obtained after the conversion is completed.

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