Multi-channel uniform gas supply device for silicon carbide crystal growth furnace and use method

Abstract

The multichannel uniform gas supply device comprises a base, a furnace body is detachably connected to the side wall of the top of the base, a bottom groove is formed in the base, a gas tank is placed on the side wall of the top in the bottom groove, and a bearing plate is detachably connected to the side wall of the side, close to the fixed end, of the gas tank; a pump box is detachably connected to the side wall of the side, away from the gas tank, of the top of the bearing plate, a conveying column is connected to the side wall of the top of the pump box in a penetrating mode, a flow dividing column is detachably connected to the top end of the conveying column, air holes are evenly formed in the side wall of the side, away from the conveying column, of the flow dividing column in a penetrating mode, and a branch pipe is detachably connected into each air hole. Compared with the prior art, the multi-channel gas distribution device has the following advantages that the branch flow pipes are connected to the flow distribution column, and a multi-channel function is formed through the branch flow pipes, so that gas can be separately and independently conveyed through the branch flow pipes, meanwhile, the branch flow pipes can surround the periphery of the crucible, and turbulent flow generated due to different gas rising rates caused by a single gas supply port is avoided.

Description

Technical Field

[0001] The invention relates to the technical field of a gas supply structure of a crystal growth furnace, and in particular to a multi-channel uniform gas supply device for a silicon carbide crystal growth furnace and a use method thereof. Background Art

[0002] Silicon carbide is a mineral material in nature. With the advancement of science and technology, artificial synthesis intervention can increase its purity to more than 99%. This also makes silicon carbide applicable in many different fields. The most commonly used field of silicon carbide is the field of electronic chips, and it is a very good chip manufacturing material. During production, a silicon carbide growth furnace is required to prepare the ingot, and then cut and process it to produce wafers. During the growth process, the furnace needs to be filled with gas to ensure that the molecules can smoothly contact the top of the graphite crucible to form crystals.

[0003] At present, the gas supply port of the growth furnace is basically set at the bottom, but the air is supplied through a single pipeline, which causes the gas entering the furnace to diffuse first and then rise. However, the rising speed of the gas near the air inlet is bound to be faster than that of other areas, which will form turbulence in the furnace, directly affecting the rising stability of the molecules and ultimately affecting the quality of the finished wafers. Therefore, a multi-channel uniform gas supply device for a silicon carbide crystal growth furnace and a use method are proposed. Summary of the invention

[0004] The technical problem to be solved by the present invention is that the gas supply in the current growth furnace is unevenly distributed, and the different rising gas flow rates affect the growth of the crystal ingot and the quality of the wafer. A multi-channel uniform gas supply device and a method of use for a silicon carbide crystal growth furnace are provided, so that the gas can be evenly delivered into the furnace body, and the gas rise is also in a uniform state, thereby ensuring the stable rise of the molecules.

[0005] The technical solution adopted by the present invention to solve the technical problem is: a multi-channel uniform gas supply device for a silicon carbide crystal growth furnace, comprising a base, a top side wall of the base is detachably connected to a furnace body, a bottom groove is opened inside the base, a gas tank is placed on the top side wall of the bottom groove, a side wall of the gas tank close to a fixed end is detachably connected to a receiving plate, a side wall of the receiving plate at the top and away from the gas tank is detachably connected to a pump box, a conveying column is inserted and connected to the top side wall of the pump box, a diversion column is detachably connected to the top of the conveying column, air holes are evenly opened on the side wall of the diversion column away from the conveying column, and a branch pipe is detachably connected in each air hole, a connecting hose is fixedly connected to the top of the branch pipe, one end of the connecting hose is connected to the bottom side wall of the furnace body, a three-way valve is detachably connected to the top of the gas tank, both ends of the three-way valve are detachably connected to pipelines, and the two pipelines are respectively connected to the pump box and the door panel of the bottom groove.

[0006] As a preferred technical solution of the present invention, the diverter column is a hollow structure, a threaded ring is fixedly connected in the middle of the bottom side wall of the diverter column, the threaded ring is an annular structure, screw grooves are opened at both ends of the conveying column and near the edge, the screw grooves correspond to the threaded rings, the threaded rings are threadedly connected in the screw grooves, a through hole is opened in the middle of the conveying column, and a sealing ring is fixedly connected to the inner wall of the through hole.

[0007] Preferably, the gas can be delivered to the diverter column along the through hole, and threading the threaded ring in the screw groove can improve the convenience of connection between the delivery column and the diverter column, which is convenient for later maintenance and disassembly.

[0008] As a preferred technical solution of the present invention, a conical column is fixedly connected to the top side wall of the diversion column, a guide groove is opened in the inner part of the conical column near the outer edge, the conical column is a conical structure, and a plug is fixedly connected to the bottom end of the conical column, the plug corresponds to the through hole and is inserted into the through hole, the outer wall of one end of the plug inserted into the through hole is tightly fitted with the sealing ring, the guide groove corresponds to the air hole, and the branch pipe is connected to the guide groove through the air hole.

[0009] Preferably, the connecting tube between the delivery column and the diversion column will also be inserted into the through hole, because the sealing ring fixed on the inner wall of the through hole can ensure the sealing of the connection and avoid gas leakage. The gas can be evenly diverted through the guide groove, so that the gas is evenly delivered into the corresponding branch pipe through the air hole.

[0010] As a preferred technical solution of the present invention, the connecting hose is detachably adjusted with a pressure-stabilizing ring, which is an annular structure. An annular groove is provided inside the pressure-stabilizing ring, and elastic sheets are fixedly connected to the middle of the side walls on both sides of the annular groove. A connecting port is provided on the side of the branch pipe opposite to the annular groove, and the inside of the branch pipe is connected to the elastic sheet through the connecting port. A sealing plate is rotatably connected to the lower edge of the connecting port through a torsion spring, and the torsion spring is a bidirectional rotating structure.

[0011] Preferably, a pressure-stabilizing ring is connected to the branch pipe. When the air pressure in the branch pipe is too high or too low, the sealing plate will be pushed open, thereby achieving the effect of pressure relief and pressure increase, ensuring the stability of the air pressure inside the branch pipe, thereby ensuring that the gas flow rate flowing in all branch pipes is in the same state, ensuring uniform supply of gas.

[0012] As a preferred technical solution of the present invention, air inlets are evenly opened on the bottom side wall of the furnace body, the position of the air inlet corresponds to the connecting hose, the air inlet is detachably connected to the end of the connecting hose away from the branch pipe, the bottom of the furnace body is detachably connected to a crucible, and the air inlet is surrounded on the bottom side wall around the crucible.

[0013] Preferably, one end of the connecting hose is connected to the air inlet, so that the gas can be smoothly delivered into the furnace body. Since the air inlets are evenly distributed around the crucible, the rising rate of the surrounding rising gas can be guaranteed to be the same, avoiding turbulence caused by excessive rate difference, thereby ensuring the smooth rise of the molecules.

[0014] As a preferred technical solution of the present invention, a guide plate is fixedly connected to the furnace body near the top side wall, the guide plate is a conical structure, the furnace body top is detachably connected to a sealing plate, the sealing plate is provided with external interfaces near both side edges, the external interfaces are communicated with the interior of the furnace body and are detachably connected to a discharge pipe, the sealing plate and the side wall opposite to the crucible are detachably connected to a growth base, and a gap is left between the top of the guide plate and the growth base.

[0015] Preferably, the rising gas connecting molecules can be guided by the established guide plate, so as to ensure the stability of the crystallization of the molecules adhering to the growth base to the greatest extent, thereby improving the efficiency of crystallization. The established gaps can ensure the flow of the rising gas, and prevent the gas from accumulating in the guide plate and causing turbulence. The gas that continues to rise will be discharged through the exhaust pipe along the external interface, so as to ensure the fluidity of the gas in the furnace.

[0016] As a preferred technical solution of the present invention, an air pump is detachably connected to the inside of the pump box, an air inlet end of the air pump is detachably connected to one end of a pipe on a three-way valve, and one end of the delivery column extends into the pump box and is detachably connected to an air outlet end of the air pump.

[0017] Preferably, starting the air pump can suck and transport the gas in the three-way valve, ensuring that the gas has sufficient power to rise, thereby ensuring that the gas is smoothly injected into the furnace body.

[0018] Preferably, a multi-channel uniform gas supply method for a silicon carbide crystal growth furnace comprises the following specific steps:

[0019] The first step is to pump out the gas through the air pump. The gas rises along the through hole and finally passes through the insert tube into the guide groove. The gas continues to rise after being diverted by the conical column, and then passes through the air hole into the branch pipe. The evenly divided gas can ensure that the amount of gas in each branch pipe is also similar.

[0020] The second step is that the gas rises along the branch pipe, and the internal air pressure can be adjusted and controlled by the pressure stabilizing ring connected to the branch pipe to ensure that the air pressure in each branch pipe is the same, thereby ensuring that the rising air flow velocity in each branch pipe is the same, and ensuring that the gas is evenly injected into the furnace body;

[0021] The third step is to evenly distribute the air inlet around the crucible, so that the gas can fill the internal space of the furnace faster. At the same time, the surrounding rising gas can stably push the molecules, thereby improving the stability of production and avoiding the impact of turbulence on production efficiency and effect.

[0022] The present invention has the following advantages: a plurality of branch pipes are connected to the diverter column, and a multi-channel function is formed through the plurality of branch pipes, so that the gas can be separately and independently transported through the plurality of branch pipes, and the branch pipes can be surrounded around the crucible, thereby avoiding turbulence caused by different gas rising rates caused by a single gas supply port, and the simultaneous delivery of the plurality of branch pipes can fill the space inside the furnace body with gas more quickly, thereby improving efficiency, and at the same time, because the gas rising rates of all the branch pipes are the same and evenly distributed, the molecules can be driven to rise steadily, thereby improving the efficiency and quality of crystallization;

[0023] The gas is injected into the guide groove along the through hole and the insert tube. Since the conical column is a conical structure, the gas entering the guide groove will be evenly distributed and diffused along the conical column, and the diffused gas will continue to rise and enter the branch tube through the air hole. At the same time, since these gases have been evenly distributed, it is guaranteed to the greatest extent that the gases entering the branch tubes are the same, thereby realizing the function of evenly delivering gas to all branch tubes.

[0024] The gas entering the branch pipe will still have a certain difference as it flows, and this difference will be reflected in the air pressure in the branch pipe. When the air pressure is too high, the sealing plate will be pushed outward, and the gas in the branch pipe will flow into the annular groove. When the internal and external air pressures are constant, the sealing plate will return to its original position. If the air pressure is too low, the gas in the annular groove will be injected into the branch pipe. In this way, excess air pressure will enter the annular groove and be stored to supply the branch pipe with low air pressure, ensuring that the air pressure difference in all branch pipes is minimized, thereby ensuring the uniformity of gas flow in the branch pipe. BRIEF DESCRIPTION OF THE DRAWINGS

[0025] Figure 1 It is a schematic diagram of the three-dimensional structure of a preferred embodiment of the present invention;

[0026] Figure 2 It is a schematic diagram of the exploded structure of the diverter column and the delivery column of a preferred embodiment of the present invention;

[0027] Figure 3 It is a schematic diagram of a half-section structure of a diverter column and a conveying column in a preferred embodiment of the present invention;

[0028] Figure 4 This is a schematic diagram of a half-section structure of a voltage stabilizing ring according to a preferred embodiment of the present invention;

[0029] Figure 5 It is a schematic diagram of the exploded structure of a pump box of a preferred embodiment of the present invention;

[0030] Figure 6 This is a schematic diagram of the bottom view of the furnace body of a preferred embodiment of the present invention;

[0031] Figure 7 It is a schematic diagram of the internal structure of a furnace body according to a preferred embodiment of the present invention.

[0032] Explanation of the reference numerals in the accompanying drawings: 1. base; 2. furnace body; 3. sealing plate; 4. discharge pipe; 5. bottom trough; 6. gas tank; 7. three-way valve; 8. receiving plate; 9. pump box; 10. conveying column; 11. diverter column; 12. screw groove; 13. through hole; 14. sealing ring; 15. threaded ring; 16. branch pipe; 17. pressure stabilizing ring; 18. connecting hose; 19. conical column; 20. guide groove; 21. insert tube; 22. annular groove; 23. elastic sheet; 24. connecting port; 25. sealing plate; 26. air pump; 27. air inlet; 28. crucible; 29. ​​growth base; 30. external interface; 31. guide plate. DETAILED DESCRIPTION

[0033] The present invention will be further described below in conjunction with the accompanying drawings.

[0034] Embodiment 1

[0035] Please refer to Figure 1-4 The present invention discloses a multi-channel uniform gas supply device for a silicon carbide crystal growth furnace and a method for using the same, comprising a base 1, a furnace body 2 is detachably connected to the top side wall of the base 1, a bottom groove 5 is provided inside the base 1, a gas tank 6 is placed on the top side wall of the bottom groove 5, a receiving plate 8 is detachably connected to the side wall of the gas tank 6 close to the fixed end, a pump box 9 is detachably connected to the side wall of the top of the receiving plate 8 and away from the gas tank 6, a conveying column 10 is inserted and connected to the top side wall of the pump box 9, and a diversion column 11 is detachably connected to the top of the conveying column 10;

[0036] The side wall of the diverter column 11 away from the delivery column 10 is evenly penetrated with air holes, and each air hole is detachably connected with a branch pipe 16, the top of the branch pipe 16 is fixedly connected with a connecting hose 18, one end of the connecting hose 18 is connected to the bottom side wall of the furnace body 2, the diverter column 11 is a hollow structure, and a threaded ring 15 is fixedly connected in the middle of the bottom side wall of the diverter column 11. The threaded ring 15 is an annular structure. Screw grooves 12 are opened at both ends of the delivery column 10 and near the edge. The screw grooves 12 correspond to the threaded rings 15, and the threaded rings 15 are threadedly connected in the screw grooves 12. A through hole 13 is provided in the middle of 10, a sealing ring 14 is fixedly connected to the inner wall of the through hole 13, a conical column 19 is fixedly connected to the top side wall of the diverter column 11, a guide groove 20 is provided in the inner part of the conical column 19 near the outer edge, the conical column 19 is a conical structure, a plug 21 is fixedly connected to the bottom end of the conical column 19, the plug 21 corresponds to the through hole 13 and is inserted into the through hole 13, the outer wall of one end of the plug 21 inserted into the through hole 13 is tightly fitted with the sealing ring 14, the guide groove 20 corresponds to the air hole, and the branch pipe 16 is connected with the guide groove 20 through the air hole.

[0037] The technical effect of this embodiment is as follows: start the air pump 26 in the pump box 9, and send the gas into the through hole 13 first. The gas rises along the through hole 13 and passes through the insert tube 21 into the guide groove 20. The gas is diverted by the conical column 19 and continues to rise along the guide groove 20 and finally passes through the air hole into the branch pipe 16, thereby achieving uniform distribution of the gas. The gas entering the branch pipe 16 is subjected to constant pressure treatment by the pressure stabilizing ring 17, so as to ensure that the air pressure in all branch pipes 16 is the same, thereby ensuring the uniform upward flow of the gas in the branch pipe 16 and ensuring that the gas is uniformly injected into the furnace body 2, thereby avoiding the problem of turbulence caused by uneven flow rate. When maintenance is required, it is only necessary to rotate the conveying column 10 to achieve its disassembly and assembly with the diversion column 11, thereby improving the convenience of maintenance.

[0038] Furthermore, the connecting hose 18 is detachably adjusted with a pressure-stabilizing ring 17, which is an annular structure. An annular groove 22 is provided inside the pressure-stabilizing ring 17, and elastic sheets 23 are fixedly connected in the middle of the side walls on both sides of the annular groove 22. A connecting port 24 is provided on the side of the branch pipe 16 opposite to the annular groove 22. The inside of the branch pipe 16 is connected to the elastic sheet 23 through the connecting port 24, and a sealing plate 25 is rotatably connected to the lower edge of the connecting port 24 through a torsion spring, and the torsion spring is a bidirectional rotating structure.

[0039] When the pressure in the branch pipe 16 is too high, the sealing plate 25 will be pushed into the annular groove 22, and then the gas in the branch pipe 16 will enter the annular groove 22, thereby reducing the air pressure in the branch pipe 16; when the pressure in the branch pipe 16 is too low, the sealing plate 25 will be pushed into the branch pipe 16, and the gas in the annular groove 22 will enter the branch pipe 16, thereby realizing the self-regulating function of the internal pressure of all branch pipes 16, ensuring the stability of the pressure in all branch pipes 16, thereby ensuring the uniformity of the gas flow in the branch pipe 16, and avoiding turbulence in the furnace body 2 due to different speeds.

[0040] Embodiment 2

[0041] Please refer to Figure 1 and 6 -7, the bottom side wall of the furnace body 2 is evenly penetrated with an air inlet 27, the position of the air inlet 27 corresponds to the connecting hose 18, the air inlet 27 is detachably connected to the end of the connecting hose 18 away from the branch pipe 16, and the bottom of the furnace body 2 is detachably connected with a crucible 28, and the air inlet 27 surrounds the bottom side wall around the crucible 28.

[0042] The technical effect of this embodiment is as follows: an air inlet 27 is evenly opened through the bottom side wall of the furnace body 2, and the connecting hose 18 is connected to the air inlet 27, so that the gas can be evenly injected into the furnace body 2 along the air inlet 27. Because a plurality of branch pipes 16 and connecting hoses 18 are provided, the gas can be filled into the furnace body 2 faster. At the same time, because the gas flow speed is uniform, it is possible to avoid the turbulence of the gas in the furnace body 2 affecting the rise of the molecules. Similarly, because the air inlet 27 is evenly distributed, the molecules can be smoothly transported upward to ensure the stability of the molecular crystallization.

[0043] Furthermore, a guide plate 31 is fixedly connected to the side wall near the top of the furnace body 2, and the guide plate 31 is a conical structure. A sealing plate 3 is detachably connected to the top of the furnace body 2. The sealing plate 3 is provided with external interfaces 30 near the edges on both sides. The external interfaces 30 are communicated with the interior of the furnace body 2 and are detachably connected to a discharge pipe 4. The side wall of the sealing plate 3 opposite to the crucible 28 is detachably connected to a growth base 29, and a gap is left between the top of the guide plate 31 and the growth base 29.

[0044] The guide plate 31 fixed on the inner wall of the furnace body 2 can guide the flowing gas and molecules, accelerate the adhesion and crystallization of the molecules and the growth base 29, and improve the production efficiency. The outer interface 30 is opened on the sealing plate 3, and the discharge pipe 4 is connected to the outer interface 30. The rising gas will continue to rise from the gap between the guide plate 31 and the growth base 29, and finally pass through the outer interface 30 and be discharged through the discharge pipe 4, so that the gas in the furnace body 2 is in a flowing state. This can ensure that the gas in the furnace body 2 is always in a uniform rising state, avoiding problems such as excessive accumulation of gas or impact on the side wall of the furnace body 2 to generate turbulence.

[0045] Embodiment 3

[0046] Please refer to Figure 1 and 5 The top of the gas tank 6 is detachably connected to a three-way valve 7, both ends of the three-way valve 7 are detachably connected to pipes, and the two pipes are respectively connected to the pump box 9 and the door panel of the bottom tank 5, and the inside of the pump box 9 is detachably connected to an air pump 26, the air inlet end of the air pump 26 is detachably connected to one end of the pipe on the three-way valve 7, and one end of the delivery column 10 extends into the pump box 9 and is detachably connected to the air outlet end of the air pump 26.

[0047] A preferred technical solution of the present embodiment is: because the gas tank 6 is connected to two pipes through the three-way valve 7, and one of the pipes is inserted and connected to the door panel of the bottom tank 5, the gas can be directly replenished when the door panel is closed, thereby reducing the frequency of opening and closing of the door panel, ensuring that all components in the bottom tank 5 are not in contact with the outside world for a long time, and reducing the occurrence of problems such as these components being damaged by external influences.

[0048] The present embodiment provides a multi-channel uniform gas supply method for a silicon carbide crystal growth furnace, and the specific steps are as follows:

[0049] First, the gas is pumped out through the air pump 26, and the gas rises along the through hole 13, and finally passes through the insert tube 21 into the guide groove 20. The gas continues to rise after being diverted by the conical column 19, and then passes through the air hole into the branch pipe 16. The evenly divided gas can ensure that the amount of gas in each branch pipe 16 is also similar.

[0050] Then, the gas rises along the branch pipe 16, and the internal gas pressure can be regulated and controlled by the pressure stabilizing ring 17 connected to the branch pipe 16, so as to ensure that the gas pressure in each branch pipe 16 is the same, thereby ensuring that the rising air flow velocity in each branch pipe 16 is the same, and ensuring that the gas is uniformly injected into the furnace body 2;

[0051] Finally, the air inlet 27 is evenly distributed around the crucible 28, so that the gas can fill the internal space of the furnace body 2 more quickly. At the same time, the surrounding rising gas can stably push the molecules, thereby improving the stability of production and avoiding the impact of turbulence on production efficiency and effect.

[0052] Specifically, when the present invention is used, the gas is observed to be sufficient through the barometer on the gas tank 6, and then the sealing plate 3 is removed, and then the raw materials are placed in the crucible 28, and then the sealing plate 3 is closed to ensure the airtightness of the furnace body 2, and then the air pump 26 is started to extract the gas in the gas tank 6 and send it into the conveying column 10, and the gas flows up along the screw groove 12 and finally passes through the insert pipe 21 into the guide groove 20, and the gas is diverted by the tapered tapered column 19 and then enters the corresponding branch pipe 16 through the air hole, and then the pressure of the pressure stabilizing ring 17 is adjusted to ensure that the gas flow rate in the branch pipe 16 is uniform, and the gas continues to rise through the connecting hose 18 through the air inlet 27 It is injected into the furnace body 2. As the gas enters the furnace body 2, the original gas will be pushed out and finally discharged from the discharge pipe 4, so that the furnace body 2 is filled with gas for production. Then the crucible 28 is heated. As the heated molecules rise, the evenly distributed rising air flow can drive the molecules to move upward smoothly. Finally, the molecules adhere to the growth base 29, and the gas rises along the gap between the guide plate 31 and the growth base 29 and is finally discharged from the discharge pipe 4. After the production is completed, the gas injection is stopped first to ensure that the furnace body 2 and the outside world are in a stable pressure state. Then the sealing plate 3 is removed, and then the ingot is removed. Then the sealing plate 3 is reclosed for the next round of production.

[0053] The above are only preferred embodiments of the present invention. It should be pointed out that, for ordinary technicians in this technical field, several improvements and modifications can be made without departing from the principles of the present invention. These improvements and modifications should also be regarded as the scope of protection of the present invention.

[0054] Other parts of the present invention not described in detail belong to the prior art and will not be described in detail here.

[0055] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit it. Although the present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or replace some or all of the technical features therein with equivalents. However, these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present invention.

Claims

1. A multi-channel uniform gas supply device for a silicon carbide crystal growth furnace, comprising a base (1), characterized in that: The top side wall of the base (1) is detachably connected to the furnace body (2); a bottom groove (5) is provided inside the base (1); a gas tank (6) is placed on the top side wall of the bottom groove (5); a receiving plate (8) is detachably connected to the side wall of the gas tank (6) close to the fixed end; a pump box (9) is detachably connected to the top side wall of the receiving plate (8) away from the gas tank (6); a conveying column (10) is inserted and connected to the top side wall of the pump box (9); and a diversion column (11) is detachably connected to the top of the conveying column (10); The side wall of the diverter column (11) away from the delivery column (10) is evenly penetrated with air holes, and a branch pipe (16) is detachably connected to each air hole, and a connecting hose (18) is fixedly connected to the top of the branch pipe (16), and one end of the connecting hose (18) is connected to the bottom side wall of the furnace body (2); The top of the gas tank (6) is detachably connected to a three-way valve (7), both ends of the three-way valve (7) are detachably connected to pipelines, and the two pipelines are respectively connected to the pump box (9) and the door panel of the bottom tank (5).

2. A multi-channel uniform gas supply device for a silicon carbide crystal growth furnace as claimed in claim 1, characterized in that: The diverter column (11) is a hollow structure. A threaded ring (15) is fixedly connected in the middle of the bottom side wall of the diverter column (11). The threaded ring (15) is an annular structure. Screw grooves (12) are provided at both ends of the delivery column (10) and near the edge. The screw grooves (12) correspond to the threaded rings (15). The threaded rings (15) are threadedly connected in the screw grooves (12). A through hole (13) is provided in the middle of the delivery column (10). A sealing ring (14) is fixedly connected to the inner wall of the through hole (13).

3. A multi-channel uniform gas supply device for a silicon carbide crystal growth furnace as claimed in claim 1, characterized in that: A conical column (19) is fixedly connected to the top side wall of the diversion column (11); a guide groove (20) is provided through the inside of the conical column (19) near the outer edge; the conical column (19) is a conical structure; a plug (21) is fixedly connected to the bottom end of the conical column (19); the plug (21) corresponds to the through hole (13) and is inserted into the through hole (13); the outer wall of one end of the plug (21) inserted into the through hole (13) is tightly fitted with the sealing ring (14); the guide groove (20) corresponds to the air hole; the branch pipe (16) is connected to the guide groove (20) through the air hole.

4. A multi-channel uniform gas supply device for a silicon carbide crystal growth furnace as claimed in claim 1, characterized in that: The connecting hose (18) is detachably adjustable with a pressure stabilizing ring (17), the pressure stabilizing ring (17) is an annular structure, an annular groove (22) is provided inside the pressure stabilizing ring (17), elastic sheets (23) are fixedly connected in the middle of the two side walls of the annular groove (22), a connecting port (24) is provided through the side of the branch pipe (16) opposite to the annular groove (22), the inside of the branch pipe (16) is connected to the elastic sheet (23) through the connecting port (24), and a sealing plate (25) is rotatably connected to the lower edge of the connecting port (24) through a torsion spring, and the torsion spring is a bidirectional rotating structure.

5. The multi-channel uniform gas supply device for a silicon carbide crystal growth furnace according to claim 1, characterized in that: The bottom side wall of the furnace body (2) is evenly penetrated with air inlets (27), the position of the air inlet (27) corresponds to the connecting hose (18), the air inlet (27) is detachably connected to the end of the connecting hose (18) away from the branch pipe (16), the bottom of the furnace body (2) is detachably connected with a crucible (28), and the air inlet (27) surrounds the bottom side wall of the crucible (28).

6. A multi-channel uniform gas supply device for a silicon carbide crystal growth furnace as claimed in claim 1, characterized in that: A guide plate (31) is fixedly connected to the side wall near the top of the furnace body (2), and the guide plate (31) is a conical structure. A sealing plate (3) is detachably connected to the top of the furnace body (2), and the sealing plate (3) is provided with external interfaces (30) near the edges on both sides. The external interfaces (30) are communicated with the inside of the furnace body (2) and are detachably connected to a discharge pipe (4). The side wall of the sealing plate (3) opposite to the crucible (28) is detachably connected to a growth base (29), and a gap is left between the top of the guide plate (31) and the growth base (29).

7. A multi-channel uniform gas supply device for a silicon carbide crystal growth furnace as claimed in claim 1, characterized in that: An air pump (26) is detachably connected to the interior of the pump box (9); an air inlet end of the air pump (26) is detachably connected to one end of a pipeline on the three-way valve (7); one end of the delivery column (10) extends into the pump box (9) and is detachably connected to an air outlet end of the air pump (26).

8. A method for uniform gas supply in multiple channels of a silicon carbide crystal growth furnace, using the device for uniform gas supply in multiple channels of a silicon carbide crystal growth furnace as claimed in claim 1, characterized in that: The specific steps are as follows: T1. The gas is pumped out through the air pump (26), and the gas rises along the through hole (13), and finally passes through the insert tube (21) and enters the guide groove (20). The gas continues to rise after being diverted by the conical column (19), and then passes through the air hole and enters the branch pipe (16). The evenly divided gas can ensure that the amount of gas in each branch pipe (16) is also similar; T2, the gas rises along the branch pipe (16), and the internal gas pressure can be regulated and controlled by the pressure stabilizing ring (17) connected to the branch pipe (16), so as to ensure that the gas pressure in each branch pipe (16) is the same, thereby ensuring that the rising air flow velocity in each branch pipe (16) is the same, and ensuring that the gas is uniformly injected into the furnace body (2); T3, through the uniform distribution of the air inlet (27) and surrounding the crucible (28), the gas can fill the internal space of the furnace body (2) more quickly, and at the same time, the surrounding rising gas can stably push the molecules, thereby improving the stability of production and avoiding the influence of turbulence on production efficiency and effect.

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