Epitaxial growth method of ultra-wide band gap lithium gallium oxide epitaxial film

Abstract

The invention discloses an epitaxial growth method of an ultra-wide band gap lithium gallium oxide epitaxial film, and relates to the technical field of semiconductor process.The method comprises the steps that when a reaction chamber of MOCVD equipment is at a first temperature of a first temperature interval and at a first pressure of a first pressure interval, an oxygen precursor is input into the reaction chamber; carrying out surface pretreatment on the substrate material in the reaction chamber for a preset duration; and adjusting the temperature of the reaction chamber to a second temperature in a second temperature interval, maintaining the first pressure, simultaneously inputting a lithium precursor, a gallium precursor and an oxygen precursor into the reaction chamber based on a predetermined molar flow ratio for chemical vapor deposition, and growing a P-type lithium gallium oxide (LiGa5O8) epitaxial film on the surface of the substrate material. According to the invention, the ultra-wide bandgap P-type lithium gallium oxide (LiGa5O8) epitaxial film with stable quality and good conductivity can be grown on the surface of the predetermined substrate material.

Description

Technical Field

[0001] The present application relates to the field of semiconductor process technology, and in particular to a method for epitaxial growth of an ultra-wide bandgap lithium gallium oxide epitaxial film. Background Art

[0002] Ultra-wide bandgap oxide semiconductor materials combine electrical conductivity and optical transparency and are widely used as key materials for optoelectronic device applications. Typical materials include gallium oxide, such as Ga2O3. With the research on ultra-wide bandgap gallium oxide semiconductor materials, a new type of P-type ultra-wide bandgap oxide semiconductor material, lithium pentagallium octoxide LiGa5O8 (referred to as lithium gallium oxide), has emerged. As a stable P-type ultra-wide bandgap oxide epitaxial growth material, LiGa5O8 has been initially achieved by researchers through the mist chemical vapor deposition (MistCVD) process. However, since the Mist CVD process is to atomize the metal precursor and then transport it to the reaction chamber with a carrier gas, and react with oxygen on the substrate surface to generate the required epitaxial material, this process requires that the metal precursor generally needs to be dissolved in an acidic solution, which can easily cause the reaction chamber equipment to be corroded by acid. At the same time, the metal precursor is input into the reaction chamber after atomization, which also leads to the inability to accurately control the amount of the metal precursor, and the atomized metal precursor is easily condensed and liquefied during the process of being transported to the reaction chamber, which greatly affects the quality of the epitaxial growth of the LiGa5O8 material. Therefore, an improved epitaxial growth method of LiGa5O8 material is urgently needed to solve the above technical problems. Summary of the invention

[0003] In view of this, the present application proposes an epitaxial growth method for an ultra-wide bandgap lithium gallium oxide epitaxial film, so as to obtain a high-quality P-type lithium gallium oxide (LiGa5O8) epitaxial film based on metal organic chemical vapor deposition (MOCVD).

[0004] The present application proposes a method for epitaxial growth of an ultra-wide bandgap lithium gallium oxide epitaxial film, comprising the following steps: When a reaction chamber of the MOCVD device is at a first temperature in a first temperature range and at a first pressure in a first pressure range, an oxygen precursor is input into the reaction chamber to perform surface pretreatment for a predetermined time on a substrate material placed in the reaction chamber; The temperature of the reaction chamber is adjusted to a second temperature in a second temperature range and the first pressure is maintained. A lithium precursor, a gallium precursor and an oxygen precursor are simultaneously input into the reaction chamber based on a predetermined molar flow ratio for chemical vapor deposition to grow a P-type lithium gallium oxide (LiGa5O8) epitaxial film on the surface of the substrate material.

[0005] In some embodiments, the substrate material includes any one of sapphire, lithium gallate, silicon, silicon carbide, gallium oxide, zinc oxide, lithium tantalate, and lithium niobate.

[0006] In some embodiments, the lithium precursor includes any one of 2,2,6,6-tetramethyl-3,5-heptanedione lithium, alkoxy lithium, alkyl lithium, and amide lithium; the gallium precursor includes any one of alkyl gallium and alkoxy gallium; and the oxygen precursor includes any one of oxygen, ozone, and nitrous oxide.

[0007] In some embodiments, the first temperature interval includes 400-800°C, and the second temperature interval includes 800-1200°C.

[0008] In some embodiments, the second temperature interval includes 800-1000°C.

[0009] In some embodiments, the first pressure interval includes 20-100 mbar.

[0010] In some embodiments, the first pressure interval includes 20-50 mbar.

[0011] In some embodiments, the molar flow ratio of the lithium precursor to the gallium precursor is in the range of 1:5 to 3:5.

[0012] In some embodiments, the molar flow ratio of the lithium precursor to the oxygen precursor is in the range of 1:100 to 1:6000, or the molar flow ratio of the gallium precursor to the oxygen precursor is in the range of 1:100 to 1:4000.

[0013] In some embodiments, the predetermined duration includes 5-60 minutes.

[0014] This application can at least achieve the following beneficial effects: The epitaxial growth method of the ultra-wide bandgap lithium gallium oxide epitaxial film of the present application uses MOCVD equipment and a metal organic chemical vapor deposition process to simultaneously input a lithium precursor, a gallium precursor and an oxygen precursor into a reaction chamber for chemical vapor deposition based on a predetermined molar flow ratio under a predetermined temperature range and pressure parameter conditions, and grow a lithium gallium oxide (LiGa5O8) epitaxial film on the surface of a substrate material. Experiments show that under the above process parameters, an ultra-wide bandgap P-type lithium gallium oxide (LiGa5O8) epitaxial film with stable quality and good conductivity characteristics can be grown on the surface of a predetermined substrate material. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the following briefly introduces the drawings required for use in the embodiments of the present application. It should be understood that the following drawings only illustrate certain embodiments of the present application and should not be regarded as limiting the scope of the present application.

[0016] Figure 1 It is a schematic flow chart of the epitaxial growth method of the ultra-wide bandgap lithium gallium oxide epitaxial film of the present application; Figure 2 A schematic structural diagram of an exemplary MOCVD equipment reaction chamber is shown; Figure 3 is a schematic flow chart of an epitaxial growth method of an ultra-wide bandgap lithium gallium oxide epitaxial film according to the first embodiment of the present application; Figure 4 is a schematic flow chart of an epitaxial growth method of an ultra-wide bandgap lithium gallium oxide epitaxial film according to a second embodiment of the present application; Figure 5 is a schematic flow chart of an epitaxial growth method of an ultra-wide bandgap lithium gallium oxide epitaxial film according to a third embodiment of the present application; Figure 6 This is a scanning electron microscope (SEM) image of the grown lithium gallium oxide (LiGa5O8) epitaxial film; Figure 7 This is the result of X-ray diffraction (XRD) test on the grown lithium gallium oxide (LiGa5O8) epitaxial film. DETAILED DESCRIPTION

[0017] In order to make the purpose, technical scheme and advantages of the present application clearer, the technical scheme in the embodiment of the present application will be clearly and completely described below in conjunction with the drawings of the embodiment of the present application. However, it should be understood that the described embodiments are only some exemplary embodiments of the present application, rather than all embodiments, and therefore the following detailed description of the embodiment of the present application is not intended to limit the scope of the present application for protection. Based on the embodiments of the present application, all other embodiments obtained by those skilled in the art without making creative work belong to the scope of protection of the present application.

[0018] It should be noted that the terms "first", "second", etc. in the specification and claims of this application are only used to distinguish and describe similar objects, rather than to describe a specific order or sequence, and cannot be understood as indicating or implying relative importance.

[0019] As mentioned above, for the new P-type ultra-wide bandgap oxide semiconductor material lithium gallium oxide (LiGa5O8), the industry has initially achieved epitaxial growth of LiGa5O8 through the mist chemical vapor deposition (mistCVD) process. However, since the mist chemical vapor deposition (mistCVD) process is to atomize the metal precursor and transport it to the reaction chamber with a carrier gas, and react with oxygen on the substrate surface to generate the required epitaxial material, this process requires that the metal precursor generally needs to be dissolved in an acidic solution, which can easily cause the reaction chamber equipment to be corroded by acid. At the same time, the metal precursor is input into the reaction chamber after atomization, which also leads to the inability to accurately control the amount of the metal precursor, and the atomized metal precursor is easy to condense and liquefy during the process of being transported to the reaction chamber, which greatly affects the quality of the epitaxial growth of the LiGa5O8 material.

[0020] Metal organic chemical vapor deposition (MOCVD) is a chemical vapor deposition method based on the thermal decomposition chemical reaction of metal organic precursors and reaction gases in a reaction chamber to grow single crystal or polycrystalline thin films. Metal organic chemical vapor deposition (MOCVD) has been applied to the epitaxial growth process of wide bandgap gallium oxide semiconductor materials, such as gallium oxide Ga2O3, but has not yet been found to be applicable to the epitaxial growth of a new type of P-type ultra-wide bandgap oxide semiconductor material, lithium gallium oxide (LiGa5O8). Therefore, the present application proposes an epitaxial growth method of an ultra-wide bandgap lithium gallium oxide epitaxial film, so as to obtain a high-quality P-type lithium gallium oxide (LiGa5O8) epitaxial film based on metal organic chemical vapor deposition (MOCVD) growth.

[0021] Figure 1 Schematic diagram of the process of epitaxial growth of ultra-wide bandgap lithium gallium oxide epitaxial film of the present application. Figure 1 As shown, the epitaxial growth method of the ultra-wide bandgap lithium gallium oxide epitaxial film of the present application comprises the following steps: Step S1, when a reaction chamber of the MOCVD device is at a first temperature in a first temperature range and a first pressure in a first pressure range, inputting an oxygen precursor into the reaction chamber to perform surface pretreatment for a predetermined time on a substrate material placed in the reaction chamber; Step S2, adjusting the temperature of the reaction chamber to a second temperature in a second temperature range and maintaining the first pressure, simultaneously inputting a lithium precursor, a gallium precursor and an oxygen precursor into the reaction chamber based on a predetermined molar flow ratio for chemical vapor deposition, and growing a lithium gallium oxide (LiGa5O8) epitaxial film on the surface of the substrate material.

[0022] In this embodiment, a growth process of lithium gallium oxide (LiGa5O8) epitaxial film is performed using MOCVD equipment. Figure 2 FIG. 1 shows a schematic structural diagram of an exemplary MOCVD equipment reaction chamber 100. Figure 2As shown, the MOCVD equipment reaction chamber 100 includes three precursor delivery channels, namely, a lithium precursor delivery channel 101, a gallium precursor delivery channel 102, and an oxygen precursor delivery channel 103, wherein the lithium precursor delivery channel 101, the gallium precursor delivery channel 102, and the oxygen precursor delivery channel 103 respectively control the molar flow of the lithium precursor, gallium precursor, and oxygen precursor input into the reaction chamber through flow controllers (MFC) 107, 108, and 109; it also includes a rotatable substrate tray 104 for placing substrate material 105; it also includes an exhaust gas exhaust channel 106 for exhausting waste gas during the chemical vapor deposition process. In addition, the MOCVD equipment reaction chamber 100 also includes a matching temperature control system and a pressure control system ( Figure 2 ), which is used to control the reaction chamber 100 to be at a predetermined operating temperature and pressure.

[0023] First, a reaction chamber 100 of the MOCVD device is adjusted to a first temperature in a first temperature range and a first pressure in a first pressure range, an oxygen precursor is input into the reaction chamber 100 through an oxygen precursor delivery channel 103, and a surface pretreatment of a substrate material 105 placed on a substrate tray 104 of the reaction chamber 100 is performed for a predetermined period of time to treat impurities, contaminants and oxides on the surface of the substrate material 105.

[0024] Secondly, the temperature of the reaction chamber 100 is adjusted to a second temperature in a second temperature range and the first pressure is maintained. Under the condition that the reaction chamber 100 is at a predetermined high temperature and a constant low pressure, the flow controllers (MFCs) 107, 108, and 109 are controlled to simultaneously input lithium precursors, gallium precursors, and oxygen precursors into the reaction chamber 100 based on a predetermined molar flow ratio through the lithium precursor delivery channel 101, the gallium precursor delivery channel 102, and the oxygen precursor delivery channel 103 to perform chemical vapor deposition, and grow a lithium gallium oxide (LiGa5O8) epitaxial film on the surface of the substrate material 105 placed on the rotatable substrate tray 104. At the same time, the exhaust gas in the chemical vapor deposition process of the lithium gallium oxide (LiGa5O8) epitaxial film is discharged through the exhaust gas discharge channel 106.

[0025] In one embodiment, the substrate material includes any one of sapphire, lithium gallate, silicon, silicon carbide, gallium oxide, zinc oxide, lithium tantalate, and lithium niobate. In one embodiment, the substrate material is preferably selected from sapphire or lithium gallate.

[0026] In one embodiment, the lithium precursor includes any one of 2,2,6,6-tetramethyl-3,5-heptanedione lithium, alkoxy lithium (RO-Li, such as methoxy lithium, ethoxy lithium, lithium tert-butoxide), alkyl lithium (R-Li, such as n-butyl lithium, methyl lithium, tert-butyl lithium), and amide lithium (R1, R2-N-Li, such as diisopropylamide lithium).

[0027] In one embodiment, the gallium precursor includes any one of alkyl gallium (R1, R2, R3-Ga) and alkoxy gallium (R1, R2, R3-O-Ga).

[0028] In one embodiment, the oxygen precursor includes any one of oxygen, ozone, and nitrous oxide.

[0029] In one embodiment, the first temperature range includes 400-800°C, and the second temperature range includes 800-1200°C.

[0030] In one embodiment, preferably, the second temperature range includes 800-1000°C. When the reaction chamber 100 is in this temperature range, a thermal decomposition chemical reaction can occur well between the lithium precursor, the gallium precursor and the oxygen precursor based on a predetermined molar flow ratio, resulting in the lithium gallium oxide (LiGa5O8) epitaxial film grown on the substrate material 105 to achieve higher single crystal growth characteristics and density characteristics, ensuring the growth quality of the lithium gallium oxide (LiGa5O8) epitaxial film. When the reaction chamber 100 is significantly lower than the second temperature range, the single crystal characteristics of the epitaxial growth of lithium gallium oxide (LiGa5O8) will be affected, resulting in the grown epitaxial material not being a single crystal material.

[0031] In one embodiment, the first pressure interval includes 20-100 mbar. In one embodiment, preferably, the first pressure interval includes 20-50 mbar. In this embodiment, the chemical vapor deposition of lithium gallium oxide (LiGa5O8) epitaxial film requires that a constant low pressure condition be maintained in the reaction chamber 100, under which a stable chemical reaction between the lithium precursor, the gallium precursor and the oxygen precursor can be guaranteed. This is because when the reaction chamber 100 is in an excessively high pressure range, it will affect the mobility of the lithium precursor and the gallium precursor on the crystal surface, thereby affecting the epitaxial growth quality of lithium gallium oxide (LiGa5O8).

[0032] In one embodiment, the molar flow ratio of the lithium precursor to the gallium precursor is in the range of 1:5 to 3:5.

[0033] In one embodiment, the molar flow ratio of the lithium precursor to the oxygen precursor is in the range of 1:100 to 1:6000, or the molar flow ratio of the gallium precursor to the oxygen precursor is in the range of 1:100 to 1:4000.

[0034] In one embodiment, the predetermined duration includes 5-60 minutes.

[0035] The epitaxial growth method of lithium gallium oxide (LiGa5O8) epitaxial film of the present application uses MOCVD equipment and metal organic chemical vapor deposition process to simultaneously input lithium precursor, gallium precursor and oxygen precursor into the reaction chamber for chemical vapor deposition based on a predetermined molar flow ratio under a predetermined temperature range and pressure parameter conditions, and grow lithium gallium oxide (LiGa5O8) epitaxial film on the surface of the substrate material. Experiments show that under the above process parameters, a P-type lithium gallium oxide (LiGa5O8) epitaxial film with stable quality can be grown on the surface of the predetermined substrate material. The P-type conductivity characteristics of the P-type lithium gallium oxide (LiGa5O8) epitaxial film are proved by the conductivity test and absorption spectrum test of the P-type lithium gallium oxide (LiGa5O8) epitaxial film, and the bandgap width of the P-type lithium gallium oxide (LiGa5O8) epitaxial film can reach an ultra-wide bandgap parameter close to 5.4eV.

[0036] The method of the present application is further described in detail below in conjunction with different specific embodiments.

[0037] Example 1 Figure 3 FIG. 1 is a flow chart of an epitaxial growth method of an ultra-wide bandgap lithium gallium oxide epitaxial film according to the first embodiment of the present application. Figure 3 As shown, the epitaxial growth method of the ultra-wide bandgap lithium gallium oxide epitaxial film of the embodiment of the present application includes the following steps: Step S31, selecting sapphire as the substrate material 105; Step S32, adjusting the reaction chamber 100 of the MOCVD equipment to a low pressure of 20 mbar; Step S33, adjusting the temperature of the reaction chamber 100 to 400° C., inputting oxygen as an oxygen precursor into the reaction chamber 100 through the oxygen precursor delivery channel 103, and performing surface pretreatment on the sapphire substrate 105 placed in the reaction chamber 100 for 60 minutes; Step S34, adjusting the temperature of the reaction chamber 100 to 800° C. and maintaining the pressure at 20 mbar; Step S35, selecting alkoxy lithium (such as methoxy lithium) as a lithium precursor and selecting alkyl gallium as a gallium precursor; Step S36, adjusting the molar flow rate of alkoxy lithium to 1.0E-4sccm, the molar flow rate of alkyl gallium to 2.1E-4sccm, and the molar flow rate of oxygen to 0.45sccm, so that the molar flow ratio of alkoxy lithium, alkyl gallium and oxygen is 1:2.1:4500, and simultaneously inputting alkoxy lithium, alkyl gallium and oxygen into the reaction chamber 100 for chemical vapor deposition, and growing a lithium gallium oxide (LiGa5O8) epitaxial film on the surface of the sapphire substrate 105.

[0038] Example 2 Figure 4 FIG. 1 is a flow chart of an epitaxial growth method of an ultra-wide bandgap lithium gallium oxide epitaxial film according to the second embodiment of the present application. Figure 4 As shown, the epitaxial growth method of the ultra-wide bandgap lithium gallium oxide epitaxial film of the embodiment of the present application includes the following steps: Step S41, selecting lithium gallate as the substrate material 105; Step S42, adjusting the reaction chamber 100 of the MOCVD equipment to a low pressure of 30 mbar; Step S43, adjusting the temperature of the reaction chamber 100 to 400° C., inputting ozone as an oxygen precursor into the reaction chamber 100 through the oxygen precursor delivery channel 103, and performing surface pretreatment on the lithium gallate substrate 105 placed in the reaction chamber 100 for 50 minutes; Step S44, adjusting the temperature of the reaction chamber 100 to 900° C. and maintaining the pressure at 30 mbar; Step S45, selecting 2,2,6,6-tetramethyl-3,5-heptanedione lithium as a lithium precursor and selecting alkoxygallium as a gallium precursor; Step S46, adjusting the molar flow rate of 2,2,6,6-tetramethyl-3,5-heptanedione lithium to 1.5E-4sccm, the molar flow rate of alkoxygallium to 2.5E-4sccm, and the molar flow rate of ozone to 0.75sccm, so that the molar flow ratio of 2,2,6,6-tetramethyl-3,5-heptanedione lithium, alkoxygallium, and ozone is 3:5:15000, and simultaneously inputting 2,2,6,6-tetramethyl-3,5-heptanedione lithium, alkoxygallium, and ozone into the reaction chamber 100 for chemical vapor deposition, and growing a lithium gallium oxide (LiGa5O8) epitaxial film on the surface of the lithium gallate substrate 105.

[0039] Example 3 Figure 5 FIG. 1 is a flow chart of an epitaxial growth method of an ultra-wide bandgap lithium gallium oxide epitaxial film according to the third embodiment of the present application. Figure 5 As shown, the epitaxial growth method of the ultra-wide bandgap lithium gallium oxide epitaxial film of the embodiment of the present application includes the following steps: Step S51, selecting silicon carbide as the substrate material 105; Step S52, adjusting the reaction chamber 100 of the MOCVD equipment to a low pressure of 50 mbar; Step S53, adjusting the temperature of the reaction chamber 100 to 500° C., inputting nitrous oxide as an oxygen precursor into the reaction chamber 100 through the oxygen precursor delivery channel 103, and performing surface pretreatment on the silicon carbide substrate 105 placed in the reaction chamber 100 for 30 minutes; Step S54, adjusting the temperature of the reaction chamber 100 to 1000° C. and maintaining the pressure at 50 mbar; Step S55, selecting lithium amide as a lithium precursor and selecting alkyl gallium as a gallium precursor; Step S56, adjusting the molar flow rate of lithium amide to 8E-5sccm, the molar flow rate of alkyl gallium to 2E-4sccm, and the molar flow rate of nitrous oxide to 0.2sccm, so that the molar flow rate ratio of lithium amide, alkyl gallium, and nitrous oxide is 1:2.5:2500, and simultaneously inputting lithium amide, alkyl gallium, and nitrous oxide into the reaction chamber 100 for chemical vapor deposition, and growing a lithium gallium oxide (LiGa5O8) epitaxial film on the surface of the silicon carbide substrate 105.

[0040] The conductivity test and absorption spectrum test of the lithium gallium oxide (LiGa5O8) epitaxial film grown by the epitaxial growth method of any of the above embodiments show that under the above process parameter conditions, a P-type lithium gallium oxide (LiGa5O8) epitaxial film with stable quality can be grown on the surface of a predetermined substrate material, proving the P-type conductivity characteristics of the P-type lithium gallium oxide (LiGa5O8) epitaxial film, and the bandgap width of the P-type lithium gallium oxide (LiGa5O8) epitaxial film can reach an ultra-wide bandgap parameter close to 5.4eV.

[0041] Figure 6 This is a scanning electron microscope (SEM) image of the grown lithium gallium oxide (LiGa5O8) epitaxial film. Figure 6 As shown, the lithium gallium oxide (LiGa5O8) epitaxial film grown by the above embodiment of the present application was observed by a scanning electron microscope (SEM), which proved that the lithium gallium oxide (LiGa5O8) epitaxial film grown on a sapphire substrate, a lithium gallate substrate, and a silicon carbide substrate at reaction temperatures of 800°C, 900°C, and 1000°C, respectively, had good surface flatness and high density characteristics.

[0042] Figure 7 This is the result of X-ray diffraction (XRD) testing of the grown lithium gallium oxide (LiGa5O8) epitaxial film. Figure 7As shown, the lithium gallium oxide (LiGa5O8) epitaxial film grown by any embodiment of the present application is tested by XRD, which proves that there are diffraction peaks near 2theta diffraction angles of 18.86° and 38.26°, corresponding to the (111) and (222) crystal planes of lithium gallium oxide (LiGa5O8), respectively, indicating that the lithium gallium oxide (LiGa5O8) epitaxial film grown by this method has high-quality single crystal growth characteristics.

[0043] The above describes the exemplary embodiments of the present application. It should be understood that the above exemplary embodiments are not restrictive but illustrative, and the protection scope of the present application is not limited thereto. It should be understood that those skilled in the art can modify and vary the embodiments of the present application without departing from the spirit and scope of the present application, and these modifications and variations should be within the protection scope of the present application.

Claims

1. A method for epitaxial growth of ultra-wide bandgap lithium gallium oxide epitaxial film, characterized in that: The following steps are involved: When a reaction chamber of the MOCVD device is at a first temperature in a first temperature range and at a first pressure in a first pressure range, an oxygen precursor is input into the reaction chamber to perform surface pretreatment for a predetermined time on a substrate material placed in the reaction chamber; The temperature of the reaction chamber is adjusted to a second temperature in a second temperature range and the first pressure is maintained. A lithium precursor, a gallium precursor and an oxygen precursor are simultaneously input into the reaction chamber based on a predetermined molar flow ratio for chemical vapor deposition to grow a P-type lithium gallium oxide (LiGa5O8) epitaxial film on the surface of the substrate material.

2. The epitaxial growth method of ultra-wide bandgap lithium gallium oxide epitaxial film according to claim 1, characterized in that: The substrate material includes any one of sapphire, lithium gallate, silicon, silicon carbide, gallium oxide, zinc oxide, lithium tantalate, and lithium niobate.

3. The epitaxial growth method of ultra-wide bandgap lithium gallium oxide epitaxial film according to claim 1, characterized in that: The lithium precursor includes any one of 2,2,6,6-tetramethyl-3,5-heptanedione lithium, alkoxy lithium, alkyl lithium, and amide lithium; the gallium precursor includes any one of alkyl gallium and alkoxy gallium; and the oxygen precursor includes any one of oxygen, ozone, and laughing gas.

4. The epitaxial growth method of ultra-wide bandgap lithium gallium oxide epitaxial film according to claim 1, characterized in that: The first temperature range includes 400-800°C, and the second temperature range includes 800-1200°C.

5. The epitaxial growth method of ultra-wide bandgap lithium gallium oxide epitaxial film according to claim 4, characterized in that: The second temperature range includes 800-1000°C.

6. The epitaxial growth method of ultra-wide bandgap lithium gallium oxide epitaxial film according to claim 1, characterized in that: The first pressure interval includes 20-100 mbar.

7. The epitaxial growth method of ultra-wide bandgap lithium gallium oxide epitaxial film according to claim 6, characterized in that: The first pressure interval includes 20-50 mbar.

8. The epitaxial growth method of ultra-wide bandgap lithium gallium oxide epitaxial film according to claim 1, characterized in that: The molar flow ratio of the lithium precursor to the gallium precursor is in the range of 1:5 to 3:

5.

9. The epitaxial growth method of ultra-wide bandgap lithium gallium oxide epitaxial film according to claim 8, characterized in that: The molar flow ratio of the lithium precursor to the oxygen precursor is in the range of 1:100 to 1:6000, or the molar flow ratio of the gallium precursor to the oxygen precursor is in the range of 1:100 to 1:4000.

10. The epitaxial growth method of ultra-wide bandgap lithium gallium oxide epitaxial film according to claim 1, characterized in that: The predetermined duration includes 5-60 minutes.

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