A method and related device for real-time monitoring of power module package aging mode

Abstract

The present invention discloses a method and related device for real-time monitoring of the aging mode of power module packaging, which belongs to the technical field of power electronic devices. According to the structure of the power module, the method establishes a thermal network model corresponding to different packaging aging modes, finds the frequency separation point corresponding to different packaging aging modes; sets the test frequency, collects the on-state voltage drop of the power module and the load current of the inverter circuit; according to different aging modes such as bonding wire detachment, solder layer fatigue, and aging of the heat dissipation system, which will cause the on-state voltage drop hysteresis curve to shift or rotate, the difference of the on-state voltage drop hysteresis curve is analyzed to determine the packaging aging mode of the power module. The use of this method can realize real-time monitoring of the packaging aging mode of the power module, effectively distinguish the cause of aging, and then accurately take maintenance measures to avoid serious failures, which helps to reduce maintenance costs; at the same time, by timely monitoring and repairing packaging aging problems, the reliability and stability of the entire system can be improved.

Description

Technical Field

[0001] The present invention relates to the technical field of power electronic devices, and in particular to a method and related device for real-time monitoring of aging modes of power module packages. Background Art

[0002] Today, power electronic converters are widely integrated into many cutting-edge fields, including new energy vehicles and renewable energy systems. As a core component, the reliability of the power module plays a crucial role in ensuring the stable operation of the entire system.

[0003] The power module packaging structure provides electrical connections, isolation, protection, and heat dissipation for the insulated gate bipolar transistor (IGBT) and diode chips. During the long-term operation of the converter, the power module is subject to periodic temperature fluctuations. Due to the mismatch in the coefficient of thermal expansion (CTE) between the various layers of packaging materials, the interconnect interfaces are subject to long-term mechanical stress cycles, inevitably leading to gradual performance degradation of the power module packaging structure, ultimately leading to sudden overstress failure. Therefore, it is particularly important to introduce online monitoring technology to monitor the aging of the power module packaging structure in real time, conduct health assessments, and proactively maintain operations. This not only reduces the secondary damage caused by sudden IGBT module failure but also ensures the safe and reliable operation of the converter system.

[0004] In commonly used multi-chip parallel high-power IGBT modules, the main package aging modes include bond wire fallout, solder layer fatigue, and cooling system aging. Bond wires gradually fatigue under long-term stress cycling and eventually fall out, causing the device to fail due to open circuit. Inside the IGBT module, the solder layer can develop voids or delamination when subjected to long-term and large temperature fluctuations. Externally, the cooling system may also suffer from aging in the form of thermal interface material (TIM) drying, flow channel blockage, or fan dust accumulation after long-term operation. Aging of the solder layer and cooling system will increase the device's thermal resistance and junction temperature, ultimately leading to severe thermal breakdown failure.

[0005] At present, in order to realize the condition monitoring of bonding wire aging, it is usually necessary to identify the changes in characteristic parameters of the power module during operation. Common ones include saturation voltage V CEsat , Miller platform time t GP , Gate peak current I G(peak)The main drawbacks of existing methods include: they are often based on a single characteristic parameter and cannot distinguish complex and diverse aging patterns; they are easily affected by operating conditions, resulting in erroneous diagnostic results; they alter the original control timing and operating state, compromising converter safety; and they face high device switching speeds, making online extraction difficult and costly. Therefore, further research is needed on the selection of characteristic parameters to characterize bond wire aging and their online extraction methods to improve the performance of online monitoring technology in terms of safety, immunity to operating conditions, and extraction difficulty, thereby better adapting to complex and changing field conditions.

[0006] Existing methods for detecting solder layer and heat dissipation system aging are primarily based on the Thermal Sensitive Electrical Parameter (TSEP) method, the steady-state case temperature method, or the transient case temperature method. The TSEP method reflects changes in junction-to-ambient thermal resistance, including both the device's junction-to-case thermal resistance and the thermal resistance of the heat dissipation system. Therefore, it cannot distinguish whether aging originates from the module's internal solder layer or the external heat dissipation system, complicating the maintenance and repair of power electronic devices. The steady-state case temperature method requires the placement of a certain number of temperature sensors on the bottom of the IGBT module's substrate, potentially impacting the device's heat dissipation capabilities and increasing device costs. The transient case temperature method is unable to provide real-time online monitoring.

[0007] In summary, there is still a lack of a mature solution for online monitoring of power module packaging aging and effectively distinguishing different aging modes to enable proactive maintenance. Therefore, in-depth research on methods to distinguish different failure modes is still needed to meet the urgent need for reliability in power electronic converters. Summary of the Invention

[0008] The purpose of the present invention is to provide a method and related device for real-time monitoring of the aging mode of power module packaging, so as to overcome the problems in the prior art that the power module status monitoring method cannot distinguish complex and diverse aging modes, is difficult and costly to extract online, and is easily affected by working conditions.

[0009] The present invention solves the above technical problems through the following technical solutions:

[0010] A method for real-time monitoring of power module package aging mode comprises the following steps:

[0011] S1. Obtain the structure of the power module, establish the thermal network model corresponding to different package aging modes, draw the amplitude-frequency characteristic curves of the thermal network model respectively, and obtain the frequency separation points corresponding to different package aging modes;

[0012] S2. Set the test frequency of the power module according to the different frequency separation points, and collect the conduction voltage drop of the power module and the load current of the inverter circuit within one cycle;

[0013] S3, with the inverter circuit load current I as the horizontal axis, the conduction voltage drop V CEsat As the vertical axis, draw the hysteresis curve HC_V of the healthy module CEsat And the hysteresis curve of the on-state voltage drop of the aging module HC_V CEsat * , analyze the differences in the above-mentioned on-state voltage drop hysteresis curves and determine the aging mode of the power module package, specifically including:

[0014] S31, based on the on-state voltage drop hysteresis curve HC_V CEsat and HC_V CEsat * , calculate the resistance increment △R introduced by the bond wire falling off CE , when the bond wire falls off, the resistance increment △R CE When the bonding wire is ≤1%, the bonding wire has not aged. When the bonding wire falls off, the resistance increment △R CE When it is >1%, the power module package aging mode is bonding wire aging;

[0015] S32, by subtracting ΔR CE The voltage drop caused by the correction aging module conduction voltage drop hysteresis curve HC_V CEsat * , and obtain the corrected on-state voltage drop hysteresis curve HC_ CEsat ** Based on this, we can get the point P in the junction temperature rising stage. L_i The area of ​​the closed region enclosed by the horizontal and vertical coordinates S L and point P during the junction temperature drop phase H_i The area of ​​the closed region enclosed by the horizontal and vertical coordinates S H Calculate the corrected aging module on-state voltage drop hysteresis curve HC_V CEsat ** Closed area S A and S H With S L The average value S B ; Among them, S A =S H -S L ,

[0016] S33. Calculate the hysteresis curve HC_V of the health module CEsat Closed area S A and S H With S L The average value S B , based on the modified S B and health module S B , calculate the rate of change △S B , when |△SB |<10%, it is considered that the power module has not aged. B |≥10%, based on the corrected S A and health module S A , calculate the rate of change △S A , when △S A When ≤15%, the power module package aging mode is the cooling system aging; when △S A When it is greater than 15%, the power module package aging mode is chip solder layer aging.

[0017] Furthermore, the thermal network model is a Cauer thermal network model.

[0018] Furthermore, the thermal resistance R of the Cauer thermal network model th and heat capacity C th It is obtained from the following formula:

[0019]

[0020] C th =c th ×ρ×d×a 2

[0021] Among them, d, λ, c th , ρ are the thickness, thermal conductivity, specific heat capacity and density of the material respectively, and a is the side length of the equivalent cross section considering the influence of horizontal heat conduction.

[0022] Furthermore, the rate of change △S A Specifically:

[0023]

[0024] Rate of change △S B Specifically:

[0025]

[0026] Furthermore, the junction temperature rise point P L_i The area of ​​the closed region enclosed by the horizontal and vertical coordinates S L Specifically:

[0027]

[0028] Point P during the junction temperature drop phase H_i The area of ​​the closed region enclosed by the horizontal and vertical coordinates S H Specifically:

[0029]

[0030] Among them, I H_i , VH_i P H_i The horizontal and vertical coordinates of I L_i , V L_i P L_i The horizontal and vertical coordinates of point P; m, n are H_i and P L_i The number of .

[0031] Furthermore, the resistance increment △R introduced by the bond wire falling off CE Specifically:

[0032]

[0033] Among them, I m is the zero temperature coefficient point; V mD For aging module I m Corresponding vertical coordinate; V mH For Health Module I m The corresponding vertical coordinate.

[0034] An electronic device includes a memory, a processor, and a computer program stored in the memory and executable on the processor. When the processor executes the program, the method for real-time monitoring of the aging mode of a power module package is implemented.

[0035] A computer-readable storage medium stores a computer program, which, when executed by a processor, implements the above-mentioned method for real-time monitoring of power module package aging mode.

[0036] A computer program product includes a computer program, which implements the above-mentioned method for real-time monitoring of power module package aging mode when executed by a processor.

[0037] Compared with the prior art, the present invention has the following positive effects:

[0038] The present invention provides a method and related device for real-time monitoring of power module package aging modes. By establishing corresponding thermal network models under different package aging modes to reflect the heat conduction characteristics within the module at different aging stages, appropriate test frequencies are set based on the frequency separation point to cover all possible package aging modes, thereby more accurately monitoring the aging mode of the power module package. Different aging modes, such as bond wire detachment, solder layer fatigue, and heat dissipation system aging, can cause the on-state voltage drop hysteresis curve to shift or rotate. The differences in the on-state voltage drop hysteresis curve are analyzed to determine the package aging mode of the power module. This method is more comprehensive and reliable than traditional single parameter monitoring. Real-time monitoring can promptly detect potential package aging problems, thereby avoiding more serious failures, helping to reduce maintenance costs, improve equipment availability, and enhance the reliability and stability of the entire system.

[0039] Furthermore, the Cauer thermal network model can accurately reflect the heat conduction process inside the power module with high estimation accuracy, and can more accurately reflect the temperature distribution inside the power module, thereby improving the accuracy of monitoring. BRIEF DESCRIPTION OF THE DRAWINGS

[0040] The drawings in the specification are used to provide further understanding of the present invention and constitute a part of the present invention. The exemplary embodiments of the present invention and their descriptions are used to explain the present invention and do not constitute improper limitations on the present invention.

[0041] Figure 1 is the inverter circuit topology diagram;

[0042] Figure 2 Schematic diagram of the packaging structure of the power module;

[0043] Figure 3 Schematic diagram of the forward output characteristics of the power module within one cycle;

[0044] Figure 4 It is a schematic diagram of the thermal network model;

[0045] Figure 5 Bode plot of the thermal network model of the cooling system aging;

[0046] Figure 6 The Bode diagram of the chip solder layer aging thermal network model;

[0047] Figure 7 This is a schematic diagram of the on-state voltage drop sampling circuit;

[0048] Figure 8 This is the on-state voltage drop hysteresis curve corresponding to the healthy module;

[0049] Figure 9 Schematic diagram of the segmented processing of the on-state voltage drop hysteresis curve of the healthy module, where (a) is a schematic diagram of the hysteresis area; (b) is a schematic diagram of the linear region fitting result;

[0050] Figure 10 The figure is a schematic diagram of the power module package aging mode monitoring process. DETAILED DESCRIPTION

[0051] To make the objectives, technical solutions, and advantages of the embodiments of the present invention more clear, the technical solutions of the embodiments of the present invention will be clearly and completely described below in conjunction with the accompanying drawings of the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Generally, the components of the embodiments of the present invention described and shown in the drawings herein can be arranged and designed in various different configurations.

[0052] Therefore, the following detailed description of the embodiments of the present invention provided in the accompanying drawings is not intended to limit the scope of the invention as claimed, but rather merely represents selected embodiments of the present invention. All other embodiments derived by persons of ordinary skill in the art based on the embodiments of the present invention without creative effort shall fall within the scope of protection of the present invention.

[0053] It should be noted that similar reference numerals and letters denote similar items in the following drawings, and therefore, once an item is defined in one drawing, it does not need to be further defined or explained in subsequent drawings.

[0054] The present invention will be further described in detail below with reference to the accompanying drawings and specific embodiments, which are intended to explain the present invention rather than to limit it.

[0055] like Figure 1 As shown in the figure, the inverter circuit built with Infineon FF150R12ME3G power module is used as the test object, including auxiliary modules and tested modules; the package structure of the tested power module is as follows Figure 2 As shown, it includes IGBT chip, chip solder layer, copper layer 1, ceramic substrate, copper layer 2, system solder layer, substrate, thermal grease and peripheral devices. Due to the thermal capacitance effect of the material, there should be a certain phase difference between the device junction temperature and loss, and the current and loss have the same phase. Therefore, there should also be a phase difference between the current and junction temperature within an output cycle. In chronological order, the following sequence can be extracted: P1(I1,T1)—P2(I3,T2)—P3(I4,T3)—P4(I6,T4)—P5(I7,T5)—P6(I8,T6)—P7(I5,T7)—P8(I2,T6)—P9(I1,T5). After marking and connecting the extracted sequence in order on the forward characteristic curve, V CEsat Hysteresis Curves (HC), defined as HC_V CEsat , see Figure 3 The curve is divided into two parts from the zero temperature coefficient point, the left side is the hysteresis area, and the right side is the linear area. In the hysteresis area, the junction temperature rise stage HC_V CEsat The point is defined as P L_i , the area of ​​the closed region enclosed by the horizontal and vertical coordinates is S L ; The point when the junction temperature drops is defined as P H_i , the area of ​​the closed region enclosed by the horizontal and vertical coordinates is S H .

[0056] The reason for the hysteresis phenomenon is that the junction temperature corresponding to the same current is no longer the same during the current rise and fall phases in an output cycle. It can be foreseen that when the average value of the junction temperature in a cycle increases, HC_V CEsatWill surround I m (zero temperature coefficient point) rotates counterclockwise; when the fluctuation of junction temperature increases within a cycle, HC_V CEsat The area of ​​the enclosed region will increase accordingly. It is difficult to distinguish between the aging of the solder layer and the heat dissipation system by traditional methods because both of them will lead to an increase in the junction temperature. However, HC_V CEsat Contains information about transient junction temperature changes within a cycle, so HC_V under different failure mechanisms can be used CEsat The difference between the two can be used to determine the aging mode of the power module package.

[0057] Based on the above analysis, a method for real-time monitoring of power module package aging mode is provided, comprising the following steps:

[0058] S1. Obtain the structure of the power module, establish the thermal network model corresponding to different package aging modes, draw the amplitude-frequency characteristic curves of the thermal network model respectively, and obtain the frequency separation points corresponding to different package aging modes;

[0059] S2. Set the test frequency of the power module according to the different frequency separation points, and collect the conduction voltage drop of the power module and the load current of the inverter circuit within one cycle;

[0060] S3, with the inverter circuit load current I as the horizontal axis, the conduction voltage drop V CEsat As the vertical axis, draw the hysteresis curve HC_V of the healthy module CEsat And the hysteresis curve of the on-state voltage drop of the aging module HC_V CEsat * , analyze the differences in the above-mentioned on-state voltage drop hysteresis curves and determine the aging mode of the power module package.

[0061] In order to obtain the changes in transient junction temperature of the power module under different failure mechanisms, the corresponding Cauer thermal network model is established. Figure 4 , thermal resistance of each layer R th and heat capacity C th It can be determined by the following formula

[0062]

[0063] C th =c th ×ρ×d×a 2 (2)

[0064] where d, λ, and c th , ρ are the thickness, thermal conductivity, specific heat capacity, and density of the material layer, respectively. a is the side length of the equivalent cross-section considering horizontal heat conduction. Substituting the various parameters of the Infineon FF150R12ME3G power module into the calculation yields the corresponding thermal network model, as shown in Table 1.

[0065] Table 1 Thermal network parameters under different aging modes

[0066]

[0067] like Figures 5-6 As shown, according to the established thermal network model, the amplitude-frequency characteristic curves under different aging modes can be drawn. It can be seen that Figure 5 The aging of the cooling system in the main affects the response of the low frequency band. When the frequency exceeds the separation point f sp When =0.5Hz, the frequency domain response of the aged IGBT module is similar to that of the healthy module. Figure 6 The aging of the chip solder layer in has a similar pattern, except that the frequency corresponding to the separation point is higher, which is 100Hz.

[0068] It can be seen that for the Infineon FF150R12ME3G power module, due to the different frequency separation points, when the output frequency is between 0.5 and 100 Hz, the dynamic thermal characteristics of the two failure mechanisms are different. To make the difference more obvious, the test can be carried out under the 1 Hz working condition. Under this working condition, the aging of the cooling system will not affect the junction temperature fluctuation, but only the average junction temperature T jav The aging of the chip solder layer will cause the junction temperature to fluctuate △T j Through this feature, the average junction temperature T can be estimated by monitoring the hysteresis curve of the on-state voltage drop in this area. jav and junction temperature fluctuation △T j and thus distinguish different aging mechanisms.

[0069] S in one cycle H and S L Expressed as:

[0070]

[0071] Where: I H_i , V H_i P H_i The horizontal and vertical coordinates of I L_i , V L_i P L_i The horizontal and vertical coordinates of point P; m, n are H_i and P L_i The number of .

[0072] When the average junction temperature T jav When rising, since the current is less than I m Time V CEsat Has a negative temperature coefficient, so S H and S L will decrease; when the junction temperature fluctuates △Tj When rising, HC_V CEsat The area of ​​the enclosed area formed increases, that is, S H and S L In order to correspond to the aging mode, S H and S L The relationship is converted into the following formula:

[0073] S A =S H -S L (5)

[0074]

[0075] Where: S A HC_V is the on-state voltage drop hysteresis curve CEsat The area of ​​the closed region, used to represent △T j Changes in S B For S H With S L The average value is used to represent the average junction temperature T jav Therefore, S A and S B The corresponding relationship with aging types can be summarized as follows:

[0076] When S B When the S A When S increases significantly, it can be judged that the thermal aging comes from the fatigue of the solder layer inside the device; A When it is approximately unchanged, it can be determined that the thermal aging comes from the heat dissipation system outside the device.

[0077] Furthermore, according to S A and S B The state of the power module is judged by the rate of change of △S A Specifically:

[0078]

[0079] Rate of change △S B for:

[0080]

[0081] In order to monitor the aging degree of the power module bonding wire, it is necessary to further identify the impact of bonding wire aging on HC_V CEsat As a typical mechanism of package aging, bond wire fall-off increases the resistance between the chip and the terminal, so HC_V CEsat will be shifted upward accordingly, which can be expressed as:

[0082] HC_V CEsat * (I) = HC_V CEsat (I)+I×△R CE (9)

[0083] Among them HC_V CEsat * is the on-state voltage drop hysteresis curve of the aging module, HC_V CEsat is the on-state voltage drop hysteresis curve of the healthy module; △R CE The resistance increase introduced by the bond wire falling off can be calculated by the following formula:

[0084]

[0085] Where, I m is the zero temperature coefficient point; V mD For aging module I m Corresponding vertical coordinate; V mH For Health Module I m The corresponding vertical coordinate.

[0086] Therefore, the on-line monitoring of various aging modes of power modules can be achieved through the on-state voltage drop hysteresis curve. The information to be collected during the monitoring process is the load current and on-state voltage drop within a cycle. The on-state voltage drop measurement circuit is as follows: Figure 7 As shown, the load current can be measured by the Hall device.

[0087] The healthy Infineon FF150R12ME3G power health module is marked as the tested module A and works in the test inverter circuit. The obtained HC_V CEsat like Figure 8 As shown. Limited by temperature sensitivity, I m The hysteresis phenomenon after point I is not as good as m So the on-state voltage drop hysteresis curve can be obtained by I m The points are divided into two regions, namely the hysteresis region and the linear region.

[0088] In a specific embodiment of the present invention, see Figure 9 (a) Calculation of the S of the healthy module through the hysteresis region A =503.6mV·A and S B =1.43V·A.

[0089] Further obtain the S of the corrected aging module A and S B Then, we can get △S according to formula (7) and (8) A and △S B .

[0090] See also Figure 9 (b) The linear region can be fitted to obtain the corresponding linear function V CEsat =6.804×(I-40)+1208, where Im=40A is the inherent characteristic of the device, V mH =1208mV, further obtain the fitting function of the aging module in the linear region, and obtain V mD After that, △R can be calculated according to formula (10) CE .

[0091] Based on the above method, the HC_V of module A (healthy module), module B (bonding wire aging module), module C (chip solder layer aging module), and module D (heat dissipation system aging module) are measured respectively. CEsat , the measurement results are shown in Table 2:

[0092] Table 2 HC_V under different aging modes CEsat Changes

[0093]

[0094] It can be seen that the bonding wire aging module △R of module B CE Increased significantly, while |△S B %|=5.6%, which is less than 10%, indicating that there are no other aging modes; Module C's heat dissipation system aging module|△S B %|=34.3%,greater than 10%,while △S A =9.5%, less than 15%; Module D chip solder layer aging module |△S B %|=18.2%, greater than 10%, and △S A =34.6%, which is greater than 15%, and effectively distinguishes different aging modes of power modules. The above thresholds can be adjusted according to working conditions and maintenance costs.

[0095] According to the test results, the monitoring process can be obtained as follows Figure 10 As shown, the summary is as follows:

[0096] Extract (I[i], V CEsat [i]) After the complete sequence, ΔR is calculated CE , when the bond wire falls off, the resistance increment △R CE When ≤1%, the bonding wire has not aged;

[0097] The resistance increment △R introduced when the bonding wire falls off CE If it is >1%, the power module package aging mode is bond wire aging, and the IGBT module needs to be replaced;

[0098] By subtracting ΔR CEThe voltage drop caused by the correction aging module conduction voltage drop hysteresis curve HC_V CEsat * , and obtain the corrected on-state voltage drop hysteresis curve HC_ CEsat ** Based on this, we can get the point P in the junction temperature rising stage. L_i The area of ​​the closed region enclosed by the horizontal and vertical coordinates S L and point P during the junction temperature drop phase H_i The area of ​​the closed region enclosed by the horizontal and vertical coordinates S H Calculate the corrected aging module on-state voltage drop hysteresis curve HC_V CEsat ** Closed area S A and S H With S L The average value S B ;

[0099] Calculate the hysteresis curve HC_V of the health module CEsat Closed area S A and S H With S L The average value S B , based on the modified S B and health module S B , calculate the rate of change △S B , when |△S B |<10%, the power module is considered not to have aged and can continue to be used;

[0100] When |△S B |≥10%, based on the corrected S A and health module S A , calculate the rate of change △S A , when △S A When the value is less than or equal to 15%, the aging mode of the power module package is the aging of the heat dissipation system, and peripheral components such as the heat dissipation silicone grease or fan need to be checked.

[0101] When △S A When it is greater than 15%, the power module package aging mode is chip solder layer aging, and the IGBT module needs to be replaced.

[0102] This process can be performed in real-time on a computer communicating with the DSP, or directly on the DSP, enabling online monitoring and diagnosis of various IGBT module aging patterns. Based on the diagnostic results, appropriate maintenance measures can be taken. The entire monitoring process is low-cost, highly reliable, highly accurate, and widely applicable.

[0103] Based on the same inventive concept, an embodiment of the present application provides an electronic device comprising a memory, a processor, and a computer program stored in the memory and executable on the processor. When the processor executes the computer program, the method steps for real-time monitoring of the aging mode of a power module package are implemented. The memory may include a memory, such as a high-speed random access memory, and may also include a non-volatile memory, such as at least one disk storage device. The processor, network interface, and memory are interconnected via an internal bus. The internal bus may be an industrial standard architecture bus, a peripheral component interconnect standard bus, an extended industrial standard architecture bus, etc. The bus may be divided into an address bus, a data bus, a control bus, etc. The memory is used to store programs. Specifically, the program may include program code, and the program code includes computer operating instructions. The memory may include both memory and non-volatile memory, and provides instructions and data to the processor.

[0104] Based on the same inventive concept, an embodiment of the present application provides a computer-readable storage medium storing a computer program. When the computer program is executed by a processor, the computer-readable storage medium implements the above-mentioned method steps for real-time monitoring of the aging mode of a power module package. Specifically, the computer-readable storage medium includes, but is not limited to, volatile memory and / or non-volatile memory. The volatile memory may include random access memory (RAM) and / or cache memory, etc. The non-volatile memory may include read-only memory (ROM), hard disk, flash memory, optical disk, magnetic disk, etc.

[0105] Based on the same inventive concept, an embodiment of the present application provides a computer program product, which includes a computer program stored on a computer-readable storage medium, and the computer program includes program instructions. When the program instructions are executed by a computer device, the computer device executes the above-mentioned method steps for real-time monitoring of the aging mode of the power module package.

[0106] It will be understood by those skilled in the art that embodiments of the present invention may be provided as methods, systems, or computer program products. Thus, the present invention may take the form of an entirely hardware embodiment, an entirely software embodiment, or an embodiment combining software and hardware. Furthermore, the present invention may take the form of a computer program product implemented on one or more computer-usable storage media (including but not limited to magnetic disk storage, CD-ROM, optical storage, etc.) containing computer-usable program code.

[0107] The present invention is described with reference to flowcharts and / or block diagrams of methods, devices (systems), and computer program products according to embodiments of the present invention. It should be understood that each process and / or block in the flowcharts and / or block diagrams, as well as combinations of processes and / or blocks in the flowcharts and / or block diagrams, can be implemented by computer program instructions. These computer program instructions can be provided to a processor of a general-purpose computer, a special-purpose computer, an embedded processor, or other programmable data processing device to produce a machine, so that the instructions executed by the processor of the computer or other programmable data processing device generate instructions for implementing the processes in the flowcharts and / or block diagrams. Figure 1 a process or multiple processes and / or boxes Figure 1 A device that provides the functions specified in a block or multiple blocks.

[0108] These computer program instructions may also be stored in a computer readable memory that can direct a computer or other programmable data processing device to work in a specific manner, so that the instructions stored in the computer readable memory produce an article of manufacture comprising an instruction device, which implements the process Figure 1 a process or multiple processes and / or boxes Figure 1 The function specified in one or more boxes.

[0109] These computer program instructions can also be loaded onto a computer or other programmable data processing device so that a series of operational steps are executed on the computer or other programmable device to produce a computer-implemented process, thereby providing the instructions executed on the computer or other programmable device for implementing the process. Figure 1 a process or multiple processes and / or boxes Figure 1 A step that specifies a function in one or more boxes.

[0110] Finally, it should be noted that the embodiments listed above are merely one or more specific manifestations of the technical solution of the present invention. Their purpose is to clearly illustrate the concept, principles, and application of the present invention through specific examples, and is in no way intended to limit the scope of protection of the present invention to these specific embodiments. In fact, the true value of this invention lies in its technical ideas and innovations, not in its form of expression or implementation.

[0111] For ordinary technicians in the relevant technical field, after thoroughly reading and understanding the technical solutions of the present invention, they are fully capable of making various forms of changes, modifications or equivalent replacements to the specific implementation methods of the invention based on their own professional knowledge and skills. These changes may include but are not limited to: adjusting the value range of technical parameters, optimizing algorithm processes to improve efficiency, replacing some technical components to achieve better compatibility or reduce costs, etc. As long as these modified technical solutions still substantially maintain the technical features claimed for protection by the original invention, that is, they can still achieve the core functions and effects of the present invention, then these changes should be deemed to fall within the scope of protection of the pending claims of the present invention.

[0112] Furthermore, with the continuous advancement and development of technology, new technical means and methods continue to emerge, providing ample room for further improvement and perfection of the present invention. Therefore, the scope of protection of the present invention should also include reasonably foreseeable improvements and extensions based on existing technologies. As long as these improvements and extensions do not deviate from the basic principles and core concepts of the present invention, they should be considered equivalent to the present invention and equally protected by patent rights.

Claims

1. A method for real-time monitoring of power module package aging mode, characterized in that: The following steps are involved: S1. Obtain the structure of the power module, establish the thermal network model corresponding to different package aging modes, draw the amplitude-frequency characteristic curves of the thermal network model respectively, and obtain the frequency separation points corresponding to different package aging modes; S2. Set the test frequency of the power module according to the different frequency separation points, and collect the conduction voltage drop of the power module and the load current of the inverter circuit within one cycle; S3, with the inverter circuit load current I as the horizontal axis, the conduction voltage drop V CEsat As the vertical axis, draw the hysteresis curve HC_V of the healthy module CEsat And the hysteresis curve of the on-state voltage drop of the aging module HC_V CEsat * , analyze the differences in the above-mentioned on-state voltage drop hysteresis curves and determine the aging mode of the power module package, specifically including: S31, based on the on-state voltage drop hysteresis curve HC_V CEsat and HC_V CEsat * , calculate the resistance increment △R introduced by the bond wire falling off CE , when the bond wire falls off, the resistance increment △R CE When the bonding wire is ≤1%, the bonding wire has not aged. When the bonding wire falls off, the resistance increment △R CE When it is >1%, the power module package aging mode is bonding wire aging; S32, by subtracting ΔR CE The voltage drop caused by the correction aging module conduction voltage drop hysteresis curve HC_V CEsat * , and obtain the corrected on-state voltage drop hysteresis curve HC_ CEsat ** Based on this, we can get the point P in the junction temperature rising stage. L_i The area of ​​the closed region enclosed by the horizontal and vertical coordinates S L and point P during the junction temperature drop phase H_i The area of ​​the closed region enclosed by the horizontal and vertical coordinates S H Calculate the corrected aging module on-state voltage drop hysteresis curve HC_V CEsat ** Closed area S A and S H With S L The average value S B ; Among them, S A =S H -S L , S33. Calculate the hysteresis curve HC_V of the health module CEsat Closed area S A and S H With S L The average value S B , based on the modified S B and health module S B , calculate the rate of change △S B , when |△S B |<10%, it is considered that the power module has not aged. B |≥10%, based on the corrected S A and health module S A , calculate the rate of change △S A , when △S A When ≤15%, the power module package aging mode is the cooling system aging; when △S A When it is greater than 15%, the power module package aging mode is chip solder layer aging.

2. The method for real-time monitoring of power module package aging mode according to claim 1, characterized in that: The thermal network model is a Cauer thermal network model.

3. The method for real-time monitoring of power module package aging mode according to claim 2, characterized in that: Thermal resistance R of Cauer thermal network model th and heat capacity C th It is obtained from the following formula: C th =c th ×ρ×d×a 2 Among them, d, λ, c th , ρ are the thickness, thermal conductivity, specific heat capacity and density of the material respectively, and a is the side length of the equivalent cross section considering the influence of horizontal heat conduction.

4. The method for real-time monitoring of power module package aging mode according to claim 1, characterized in that: Rate of change △S A Specifically: Rate of change △S B Specifically:

5. The method for real-time monitoring of power module package aging mode according to claim 1, characterized in that: Point P during the junction temperature rise phase L_i The area of ​​the closed region enclosed by the horizontal and vertical coordinates S L Specifically: Point P during the junction temperature drop phase H_i The area of ​​the closed region enclosed by the horizontal and vertical coordinates S H Specifically: Among them, I H_i , V H_i P H_i The horizontal and vertical coordinates of I L_i , V L_i P L_i The horizontal and vertical coordinates of point P; m, n are H_i and P L_i The number of .

6. The method for real-time monitoring of power module package aging mode according to claim 1, characterized in that: Resistance increment △R caused by bond wire detachment CE Specifically: Among them, I m is the zero temperature coefficient point; V mD For aging module I m Corresponding vertical coordinate; V mH For Health Module I m The corresponding vertical coordinate.

7. An electronic device comprising a memory, a processor, and a computer program stored in the memory and executable on the processor, wherein: When the processor executes the program, the method for real-time monitoring of the aging mode of a power module package according to any one of claims 1 to 6 is implemented.

8. A computer-readable storage medium having a computer program stored thereon, characterized in that: When the computer program is executed by a processor, the method for real-time monitoring of the aging mode of a power module package according to any one of claims 1 to 6 is implemented.

9. A computer program product comprising a computer program, characterized in that When the computer program is executed by a processor, the method for real-time monitoring of the aging mode of a power module package according to any one of claims 1 to 6 is implemented.

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