Dynamic voltage determination method, system and device of LPDDR chip and storage medium

Abstract

The invention discloses a dynamic voltage determination method, system and device of an LPDDR chip and a storage medium. The method comprises the steps of obtaining process parameters of the LPDDR chip; determining a parameter type according to the process parameter, wherein the parameter type represents the type of the process parameter; determining a DVFSC mode of the LPDDR chip according to the parameter type and a preset data table; and determining the dynamic voltage of the LPDDR chip according to the DVFSC mode, the preset data table and the process parameters. According to the method, the defects of an existing method can be effectively overcome, the DVFSC mode of the LPDDR chip is determined through the processing parameters of the LPDDR chip, and therefore the dynamic voltage in the DVFSC mode is obtained through calculation, when the DVFSC mode is a low-frequency mode, the corresponding dynamic voltage can be calculated, and the working stability of the LPDDR chip is improved.

Description

Technical Field

[0001] The present invention relates to the field of memory testing technology, and in particular to a method, system, device and storage medium for determining a dynamic voltage of an LPDDR chip. Background Art

[0002] LPDDR (Low-Power Double Data Rate SDRAM) is a memory device used in mobile devices, IoT devices and other electronic devices with strict power consumption requirements. While meeting the device's requirements for memory capacity and performance, it focuses on reducing power consumption and extending the battery life of the device.

[0003] When existing LPDDR chips (especially LPDDR5) are in low-frequency mode, the dynamic voltage cannot be accurately calculated, resulting in unstable operation of the LPDDR chip. Summary of the invention

[0004] In view of this, an object of the embodiments of the present invention is to provide a method, system, device and storage medium for determining the dynamic voltage of an LPDDR chip, which can accurately calculate the dynamic voltage when the LPDDR chip is in a low frequency mode and improve the working stability of the LPDDR chip.

[0005] In a first aspect, an embodiment of the present invention provides a method for determining a dynamic voltage of an LPDDR chip, comprising: obtaining a process parameter of the LPDDR chip; Determining a parameter type according to the process parameter, wherein the parameter type represents a class of the process parameter; Determine the DVFSC mode of the LPDDR chip according to the parameter type and the preset data table; The dynamic voltage of the LPDDR chip is determined according to the DVFSC mode, the preset data table and the process parameters.

[0006] In some optional embodiments, determining the parameter type according to the process parameter includes: determining parameter performance based on the process parameters; In the case where the parameter performance characterization indicates that the process parameter is an electrical performance parameter, the process parameter indicating the electrical performance of the transistor is configured as a first type, and / or the process parameter indicating the electrical performance of the load element is configured as a second type; In the case where the parameter performance characterization indicates that the process parameter is a physical performance parameter, the process parameter indicating the physical performance of the transistor is configured as a third type, and / or the process parameter indicating the physical performance of the load element is configured as a fourth type.

[0007] In some optional embodiments, determining the DVFSC mode of the LPDDR chip according to the parameter type and the preset data table includes: In the case where the parameter type is configured as the first type, searching the preset data table for a first mode corresponding to the first type, and configuring the DVFSC mode as the first mode; When the parameter type is configured as the second type, searching the preset data table for a second mode corresponding to the second type, and configuring the DVFSC mode as the second mode; In the case where the parameter type is configured as the third type, searching the preset data table for a third mode corresponding to the third type, and configuring the DVFSC mode as the third mode; When the parameter type is configured as the fourth type, a fourth mode corresponding to the fourth type is searched in the preset data table, and the DVFSC mode is configured as the fourth mode, the first mode indicates a high frequency mode, and the second mode and the third mode indicate a low frequency mode.

[0008] In some optional embodiments, determining the dynamic voltage of the LPDDR chip according to the DVFSC mode, the preset data table and the process parameters includes: Determine a target entry in the preset data table based on the DVFSC mode; The dynamic voltage is determined according to the process parameters and the target entry, and the dynamic voltage represents a voltage preset according to different process parameters.

[0009] In some optional embodiments, after determining the target entry in the preset data table based on the DVFSC mode, the method further includes: Determine a voltage calculation formula according to the target item; The dynamic voltage is obtained by substituting the process parameters into the voltage calculation formula for calculation.

[0010] In some optional embodiments, determining the dynamic voltage according to the process parameter and the target item includes: Acquire a first voltage corresponding to the process parameter of the first type in the target entry; Acquire a second voltage corresponding to the process parameter of the second type in the target entry; Acquire a third voltage corresponding to the process parameter of the third type in the target entry; Acquire a fourth voltage corresponding to the process parameter of the fourth type in the target entry; The dynamic voltage is determined according to the first voltage, the second voltage, a third voltage, and a fourth voltage.

[0011] In some optional embodiments, determining the dynamic voltage according to the first voltage, the second voltage, the third voltage and the fourth voltage includes: Obtaining a first weight coefficient of the first voltage, a second weight coefficient of the second voltage, a third weight coefficient of the third voltage, and a fourth weight coefficient of the fourth voltage; The dynamic voltage is calculated according to the first voltage, the first weight coefficient, the second voltage, the second weight coefficient, the third voltage, the third weight coefficient, the fourth voltage and the fourth weight coefficient.

[0012] In a second aspect, an embodiment of the present invention provides a dynamic voltage determination system for an LPDDR chip, including: a first module, for obtaining process parameters of the LPDDR chip; A second module is used to determine a parameter type according to the process parameter, wherein the parameter type represents the type of the process parameter; The third module is used to determine the DVFSC mode of the LPDDR chip according to the parameter type and the preset data table; The fourth module is used to determine the dynamic voltage of the LPDDR chip according to the DVFSC mode, the preset data table and the process parameters.

[0013] In a third aspect, an embodiment of the present invention provides a memory testing device, applied to a smart card, the device comprising: at least one processor; at least one memory for storing at least one program; When the at least one program is executed by the at least one processor, the at least one processor implements the method as described above.

[0014] In a fourth aspect, an embodiment of the present invention provides a computer-readable storage medium, in which a program executable by a processor is stored. When the program executable by the processor is executed by the processor, it is used to perform the method as described above.

[0015] The implementation of the embodiment of the present invention includes the following beneficial effects: The embodiment of the present invention provides a method for determining the dynamic voltage of an LPDDR chip, including: obtaining the process parameters of the LPDDR chip; determining the parameter type according to the process parameters, the parameter type characterizing the type of the process parameters; determining the DVFSC mode of the LPDDR chip according to the parameter type and a preset data table; determining the dynamic voltage of the LPDDR chip according to the DVFSC mode, the preset data table and the process parameters. The present application can effectively make up for the shortcomings of the existing method, determine the DVFSC mode of the LPDDR chip through the process parameters of the LPDDR chip, and thus calculate the dynamic voltage under the DVFSC mode. Therefore, when the DVFSC mode is a low-frequency mode, the corresponding dynamic voltage can be calculated to improve the stability of the LPDDR chip. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] Figure 1 It is a schematic flow chart of the steps of a method for determining a dynamic voltage of an LPDDR chip provided by an embodiment of the present invention; Figure 2 It is a structural block diagram of a dynamic voltage determination system for an LPDDR chip provided by an embodiment of the present invention; Figure 3 It is a structural block diagram of a memory testing device provided by an embodiment of the present invention. DETAILED DESCRIPTION

[0017] In order to make the purpose, technical solution and advantages of the present invention more clearly understood, the present invention is further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present invention and are not used to limit the present invention.

[0018] It should be noted that, although the functional modules are divided in the device schematic diagram and the logical order is shown in the flowchart, in some cases, the steps shown or described may be performed in a different order than the module division in the device or the order in the flowchart. The terms "first", "second", etc. in the specification, claims or the above drawings are used to distinguish similar objects and are not necessarily used to describe a specific order or sequence.

[0019] The embodiment of the present invention provides a method for determining the dynamic voltage of an LPDDR chip, comprising: obtaining the process parameters of the LPDDR chip; determining the parameter type according to the process parameters, wherein the parameter type characterizes the type of the process parameters; determining the DVFSC mode of the LPDDR chip according to the parameter type and a preset data table; and determining the dynamic voltage of the LPDDR chip according to the DVFSC mode, the preset data table and the process parameters. The present application can effectively make up for the shortcomings of the existing method, and determine the DVFSC mode of the LPDDR chip through the process parameters of the LPDDR chip, thereby calculating the dynamic voltage under the DVFSC mode. Therefore, when the DVFSC mode is a low-frequency mode, the corresponding dynamic voltage can be calculated to improve the working stability of the LPDDR chip.

[0020] The embodiments of the present invention are further described below in conjunction with the accompanying drawings.

[0021] like Figure 1 As shown, an embodiment of the present invention provides a method for determining a dynamic voltage of an LPDDR chip, which includes the following steps.

[0022] S100, obtaining process parameters of the LPDDR chip; S200, determining a parameter type according to the process parameter, wherein the parameter type represents a type of the process parameter; S300, determining the DVFSC mode of the LPDDR chip according to the parameter type and the preset data table; S400, determining the dynamic voltage of the LPDDR chip according to the DVFSC mode, the preset data table and the process parameters.

[0023] Specifically, the process parameters of the present application can be obtained through design documents, measurements during the manufacturing process, and chip testing equipment, and the specific acquisition method is not limited here. The process parameters of the LPDDR chip play a decisive role in the performance, power consumption, and electromagnetic compatibility of the chip. The process parameters cover multiple aspects, such as parameters at the transistor level, including the channel length, channel width, threshold voltage, and doping concentration of the transistor. The channel length and width affect the size of the transistor, which is in turn related to the integration of the LPDDR chip and the electron migration speed; the threshold voltage determines the minimum voltage required for the transistor to turn on, and has an important influence on the setting of the operating voltage range of the entire LPDDR chip; the doping concentration is related to the carrier concentration and affects the conductivity of the transistor. In addition, it also involves parameters related to the physical structure of the LPDDR chip, such as the thickness of the metal layer, the spacing of the metal wires, and the thickness of the insulating layer. The metal layer-related parameters affect the wiring resistance and capacitance inside the LPDDR chip, affecting the signal transmission speed and power consumption; the thickness of the insulating layer is related to the voltage resistance and leakage of the LPDDR chip. In addition, there are related parameters of passive components such as capacitors and resistors, which together form the basis of the complex electrical characteristics of LPDDR chips.

[0024] The type of LPDDR chip is determined by analyzing the relationship between process parameters and various performance indicators of the chip, and is identified by corresponding symbols.

[0025] The preset data table is formed after a lot of experimental tests, simulation analysis and feedback from actual applications during the development of the LPDDR chip. It records the best DVFSC (dynamic voltage and frequency scaling control) mode of the LPDDR chip under various working conditions under different parameter type combinations. The table is arranged according to different parameter type categories. Each row corresponds to a parameter type combination, and the columns list the corresponding DVFSC mode and related description information. When the parameter types corresponding to the chip process parameters have been determined, find the matching entries in the preset data table. By comparing the specific conditions of each parameter type, find the row of records that best matches the current LPDDR chip process parameter characteristics. The DVFSC mode specified in the row of records is the mode suitable for the LPDDR chip. Different DVFSC modes specify the dynamic voltage of the LPDDR chip under different working conditions.

[0026] In some embodiments, in a certain DVFSC mode, the dynamic voltage is associated with multiple factors of the LPDDR chip, such as the operating frequency, load conditions, and specific process parameters of the LPDDR chip. For example, in a DVFSC mode that focuses on low power consumption, as the operating frequency of the LPDDR chip decreases, the dynamic voltage will also decrease in a certain proportion to reduce power consumption; while in a mode that focuses on high performance, the dynamic voltage needs to be maintained at a high level when working at a high frequency to ensure fast switching of transistors and high-speed data transmission.

[0027] In some optional embodiments, determining the parameter type according to the process parameter includes: determining parameter performance based on the process parameter; when the parameter performance characterizes that the process parameter is an electrical performance parameter, configuring the process parameter indicating the electrical performance of the transistor as a first type, and / or configuring the process parameter indicating the electrical performance of the load element as a second type; when the parameter performance characterizes that the process parameter is a physical performance parameter, configuring the process parameter indicating the physical performance of the transistor as a third type, and / or configuring the process parameter indicating the physical performance of the load element as a fourth type.

[0028] Specifically, transistors are core active components in LPDDR chips, and their electrical performance plays a key role in the functional realization of the entire LPDDR chip. For example, process parameters such as the threshold voltage, carrier mobility, channel length, channel width, and doping concentration of the transistor directly reflect the electrical characteristics of the transistor. For example, the threshold voltage determines the voltage condition under which the transistor starts to conduct, and its size directly affects the static power consumption and operating speed of the chip. Carrier mobility is related to the switching speed and current driving capability of the transistor, and determines the electrical performance indicators such as the data reading and writing speed of the LPDDR chip. Therefore, these process parameters that can intuitively reflect the electrical performance of the transistor are classified into the first type (corresponding symbols can be used, such as 1α, etc., without specific limitation), so that when considering the factors affecting the electrical performance of the chip in the future, unified analysis and processing can be carried out, and then based on these parameters, the appropriate DVFSC mode and dynamic voltage configuration can be determined.

[0029] In addition to transistors, LPDDR chips also have load components such as capacitors and resistors. Taking capacitors as an example, the size of parasitic capacitance in LPDDR chips (including gate capacitance of transistors, parasitic capacitance between metal layers, etc.) will affect the charging and discharging time of signals, thereby changing the signal transmission speed. At the same time, it also consumes electrical energy during the charging and discharging process, affecting the power consumption of LPDDR chips. Resistive components (such as metal wiring resistance, etc.) will produce a voltage drop when current passes through, affecting the integrity of the signal and the loss of electrical energy. These process parameters related to the electrical performance of load components are classified as the second type (corresponding symbols can be used, such as 1β, etc., without specific restrictions), which helps to comprehensively analyze the impact of different components when comprehensively considering the overall electrical performance of the LPDDR chip, and more accurately determine the working mode and voltage parameters that meet the actual electrical characteristics of the LPDDR chip.

[0030] Although transistors mainly play a role with their electrical properties, some process parameters related to physical properties are equally important. For example, the physical size of the transistor (including the overall size, thickness of each layer structure, etc.), these physical parameters not only affect the integration of the LPDDR chip, but may also indirectly affect the electrical performance. Smaller transistor physical size helps to improve the integration of LPDDR chips to a certain extent, but it also brings problems such as heat dissipation or physical stability when working at high frequencies. In addition, physical performance parameters such as the degree of fit between the various material layers of the transistor will affect the transmission of electrons at the interface of different materials, and thus have an indirect impact on the electrical performance. This type of process parameters that reflect the physical performance of transistors are classified as the third type (corresponding symbols can be used to represent them, such as 1X, etc., without specific restrictions). When analyzing the overall performance of the chip and determining the relevant configuration in the subsequent analysis, the impact of physical structure factors on electrical characteristics can be comprehensively considered to make the determined working mode and voltage parameters more in line with the actual situation of the LPDDR chip.

[0031] For the load elements in the LPDDR chip, physical performance parameters such as the thickness of the metal layer, the spacing of the metal wires, and the thickness of the insulating layer directly determine the physical properties of the load elements. The thickness of the metal layer affects its conductivity and resistance characteristics, the spacing of the metal wires affects the wiring capacitance and the electromagnetic interference between the signals, and the thickness of the insulating layer is related to the physical performance of the LPDDR chip, such as the withstand voltage and leakage. These process parameters related to the physical performance of the load elements are classified into the fourth type (corresponding symbols can be used, such as 1Y, etc., without specific restrictions). When considering the overall performance of the LPDDR chip, the physical structure factors can be fully taken into account to ensure that when determining the chip's DVFSC mode, dynamic voltage and other parameters, the physical performance parameters are fully considered. The impact of the working state of the LPDDR chip ensures that the LPDDR chip operates in a state with a stable physical structure and good electrical performance.

[0032] In some optional embodiments, determining the DVFSC mode of the LPDDR chip according to the parameter type and the preset data table includes: when the parameter type is configured as the first type, searching the preset data table for a first mode corresponding to the first type, and configuring the DVFSC mode as the first mode; when the parameter type is configured as the second type, searching the preset data table for a second mode corresponding to the second type, and configuring the DVFSC mode as the second mode; when the parameter type is configured as the third type, searching the preset data table for a third mode corresponding to the third type, and configuring the DVFSC mode as the third mode; when the parameter type is configured as the fourth type, searching the preset data table for a fourth mode corresponding to the fourth type, and configuring the DVFSC mode as the fourth mode, the first mode indicates a high frequency mode, and the second mode and the third mode indicate a low frequency mode.

[0033] Specifically, the first type of parameters are mainly process parameters that indicate the electrical performance of transistors. These parameters have a key impact on the electrical behavior and working characteristics of the chip (the chips in this application all refer to LPDDR chips). For example, situations such as the high carrier mobility and small channel length of the transistor (characteristics covered by the first type of parameters) mean that the transistor has a strong switching speed and current driving capability, which can support the chip to work at a higher frequency to achieve fast data reading, writing and processing. Therefore, from a performance perspective, the chip corresponding to this type of parameter is more suitable for high-frequency working mode, so as to give full play to its electrical performance advantages and improve the overall working efficiency of the chip. The preset data table is constructed after a large number of chip tests, simulation analysis and actual application feedback. It records the mapping relationship between different parameter types and corresponding DVFSC modes. When the parameter type is configured as the first type, the corresponding first mode is searched in the data table. For the first type of parameters in the data table, based on past experiments and experience, a high-frequency mode adapted to it will be included as the first mode. This high-frequency mode will specify the corresponding voltage and frequency adjustment strategies. For example, in this mode, a higher operating voltage range (such as 1.05V) will be set to ensure that the transistor can be turned on and off quickly when working at high frequency. At the same time, in conjunction with the corresponding frequency adjustment rules, the chip can operate stably in a high-frequency state to meet the needs of high-performance data processing.

[0034] The second type of parameters are process parameters that indicate the electrical performance of the load element. The relevant parameters of the load element, such as parasitic capacitance and resistance in the chip, belong to this category. Large parasitic capacitance and other conditions (characteristics reflected by the second type of parameters) will make the signal charge and discharge time longer, affect the signal transmission speed, and consume more power during the charge and discharge process, which is not conducive to the chip to work efficiently at high frequency. At the same time, considering power consumption and signal stability, the chip corresponding to this type of parameters is more suitable for running in low-frequency mode. By reducing the operating frequency, the pressure of signal transmission and the loss of power can be reduced, and the chip can be guaranteed to process data stably. Although the data transmission speed is relatively slow, it can achieve a better balance in power consumption and stability. The DVFSC mode is also determined according to the preset data table. In the data table, a corresponding second mode is specially set for the second type of parameters, which is defined as a low-frequency mode. In this low-frequency mode, its voltage and frequency adjustment strategy will focus on reducing power consumption and maintaining signal stability. For example, a relatively low operating voltage (such as 0.9V) will be set to avoid excessive power consumption on the load components due to excessively high voltage. At the same time, the operating frequency will be adjusted to a suitable low-frequency range so that the chip can operate stably in this state, meeting the needs of some application scenarios that do not have high requirements for real-time performance but focus on power consumption and stability.

[0035] The third type of parameters focuses on process parameters that indicate the physical performance of transistors, such as the physical size of transistors, the degree of fit between material layers, and other physical property-related parameters. When these physical performance parameters present certain characteristics, such as the small physical size of transistors may lead to heat dissipation problems or physical stability problems when working at high frequencies, from the perspective of the impact of physical structure on the overall performance of the chip, such chips are not suitable for long-term operation at high frequencies, otherwise there may be risks such as overheating and physical structure damage, affecting the reliability and life of the chip. Therefore, based on the limitations of physical performance, the chip is allowed to work in low-frequency mode to ensure the stability of its physical structure and the stability of its overall performance. According to the corresponding relationship of the preset data table, there is a corresponding third mode for the third type of parameters, and this mode is also set to low-frequency mode. In the third mode, the voltage and frequency adjustment rules of its DVFSC will comprehensively consider the physical performance factors of the transistor. For example, according to the heat dissipation requirements and physical stability requirements of the transistor, the operating voltage (such as 0.9V) will be reasonably set to avoid aggravating the heat dissipation problem. At the same time, the operating frequency will be controlled in the low-frequency range to ensure that the chip can achieve stable reading, writing and processing of data under the premise of stable physical structure, extend the service life of the chip, and ensure the stable operation of the system.

[0036] The fourth type of parameters involves process parameters that indicate the physical properties of the load element, such as the thickness of the metal layer, the spacing of the metal wires, and the thickness of the insulating layer. For example, if the spacing of the metal wires is unreasonable, it may lead to increased wiring capacitance and enhanced electromagnetic interference between signals. Insufficient thickness of the insulating layer may cause leakage and other problems. These physical performance conditions will affect the stability and normal operation of the chip. In this case, in order to ensure that the chip can work reliably and avoid problems such as signal transmission errors and leakage faults caused by physical structural factors, the chip is operated in a low-frequency mode. By reducing the frequency, the pressure on the physical structure is reduced to ensure the stability of signal transmission and the overall safety of the chip. Find the fourth mode corresponding to the fourth type of parameters in the preset data table, which is a low-frequency mode or a non-working mode. The DVFSC strategy in the fourth mode will focus on the impact of the physical properties of the load element on the chip. For example, according to the physical characteristics of the metal layer and the insulating layer, set the appropriate operating voltage to avoid leakage risks, and maintain the operating frequency at a low frequency state, so that the chip can achieve stable data processing functions on the basis of considering the stability of the physical structure of the load element, and meet the system's requirements for chip reliability.

[0037] In some optional embodiments, determining the dynamic voltage of the LPDDR chip according to the DVFSC mode, the preset data table and the process parameters includes: determining a target entry in the preset data table based on the DVFSC mode; determining the dynamic voltage according to the process parameters and the target entry, the dynamic voltage representing a voltage preset according to different process parameters.

[0038] Specifically, when the DVFSC mode adopted by the LPDDR chip is known, the corresponding part of the mode is located in the preset data table. For example, if the DVFSC mode determined by the LPDDR chip is a high-frequency mode (assuming that it is determined as this mode based on the matching of relevant parameter types before), then find the area in the data table that specifically describes the relevant information of the high-frequency mode, and further search for the entry that matches or is closest to the actual process parameters of the current chip in this area. This entry is the target entry. The corresponding dynamic voltage is extracted from the target entry, so that the chip can work with dynamic voltage in this DVFSC mode, ensuring that its performance, power consumption, stability and other aspects of performance are optimized or meet the established system requirements.

[0039] In some optional embodiments, after determining the target entry in the preset data table based on the DVFSC mode, the method further includes: determining a voltage calculation formula according to the target entry; and obtaining the dynamic voltage by substituting the process parameters into the voltage calculation formula for calculation.

[0040] Specifically, after finding the target entry from the preset data table based on the DVFSC mode, the voltage calculation formula is extracted from the entry, and the actual process parameters of the LPDDR chip are substituted into the formula for calculation to accurately determine the dynamic voltage of the LPDDR chip. By making full use of the large amount of experimental and empirical data integrated in the preset data table and combining the specific process parameter characteristics of the chip, the dynamic voltage can be accurately quantified and calculated to ensure that the chip can run at an appropriate voltage in a specific DVFSC mode, and to ensure that the chip performance, power consumption, stability and other aspects are well balanced.

[0041] In some optional embodiments, determining the dynamic voltage based on the process parameters and the target entry includes: obtaining a first voltage corresponding to the first type of process parameters in the target entry; obtaining a second voltage corresponding to the second type of process parameters in the target entry; obtaining a third voltage corresponding to the third type of process parameters in the target entry; obtaining a fourth voltage corresponding to the fourth type of process parameters in the target entry; and determining the dynamic voltage based on the first voltage, the second voltage, the third voltage and the fourth voltage.

[0042] Specifically, by obtaining the voltage values ​​associated with various process parameters in the target entry, and then integrating these voltage values ​​in a reasonable way, the dynamic voltage suitable for the chip in a specific working mode (determined by the DVFSC mode) is finally accurately determined. This can fully take into account the characteristics of the chip from multiple dimensions, ensuring that the setting of the dynamic voltage is consistent with the physical and electrical structure characteristics of the chip, and can meet its requirements for performance, power consumption, and stability in different application scenarios.

[0043] The first type of process parameters are parameters closely related to the electrical performance of transistors, such as the threshold voltage, carrier mobility, channel length and width, and doping concentration of transistors. These parameters fundamentally determine the electrical behavior of transistors, and thus have a significant impact on the working characteristics of the entire chip. For example, the threshold voltage determines the minimum voltage required for the transistor to start conducting. A lower threshold voltage makes the transistor easier to conduct, but it may also cause an increase in leakage current in the off state, affecting the static power consumption of the chip; carrier mobility is related to the switching speed and current driving capability of the transistor. A higher carrier mobility helps to achieve fast data read and write operations and improve the operating frequency and processing performance of the chip. The target entry is a key record selected from the preset data table for the specific situation of the current chip, in which the corresponding first voltage is set for the first type of process parameters. This first voltage is determined based on a large number of experimental tests, simulation analysis, and actual application experience, and after comprehensively considering the electrical performance characteristics of the transistor reflected by the first type of process parameters. In the target entry, the voltage value adapted to the specific DVFSC mode and the specific range or value of the first type of process parameters of the current chip will be clearly given as the first voltage.

[0044] In some embodiments, a suitable first voltage value, such as 1.0V (only an example value), is given in the target entry based on past test data of chips with similar parameters in the DVFSC mode, and the first voltage can be obtained by searching for corresponding records.

[0045] The second type of process parameters mainly involve parameters indicating the electrical performance of the load element, including characteristic parameters of the load element such as parasitic capacitance and resistance in the chip. Similarly, the second voltage corresponding to the second type of process parameters is searched in the target entry.

[0046] The third type of process parameters focuses on parameters that indicate the physical performance of transistors, covering aspects such as the physical size of transistors (such as the overall size, the thickness of each layer structure, etc.) and the degree of fit between each material layer. Although these parameters mainly reflect the physical characteristics of transistors, they will indirectly affect the electrical performance and working state of the transistor and even the entire chip. For example, a smaller physical size of transistors helps to improve the integration of chips, but may cause heat dissipation problems or physical stability problems when working at high frequencies; the insufficient fit between the material layers of transistors may affect the transmission efficiency of electrons at the interface of different materials, thereby changing the electrical performance of transistors, so these physical performance parameters are also important factors to consider when determining the appropriate working voltage of the chip. The corresponding third voltage is recorded in the target entry for the third type of process parameters. When the physical performance parameters of the transistors of the chip show specific conditions (such as small physical size, general material layer fit, etc.), combined with the comprehensive consideration of chip stability and electrical performance in the current DVFSC mode, the corresponding third voltage value is specified in the target entry. For example, according to the records in the target entry, for chips with the physical performance characteristics of this type of transistor, in the DVFSC mode, the third voltage is set to 0.9V (for example only). By obtaining the voltage corresponding information related to the physical performance parameters of the transistor in the target entry, the third voltage can be obtained. It reflects the voltage adapted to ensure stable operation of the chip from the perspective of the physical structure of the transistor.

[0047] The fourth type of process parameters focuses on the parameters that indicate the physical performance of the load element, such as the thickness of the metal layer, the spacing of the metal wires, and the thickness of the insulating layer. These physical parameters directly determine the physical characteristics of the load element and have an impact on the stability, signal transmission, and power consumption of the chip. Find the fourth voltage corresponding to the fourth type of process parameters in the target entry.

[0048] In some embodiments, the corresponding fourth voltage value is given based on the actual physical performance parameters of the chip load element, taking into account the requirements of maintaining chip stability, ensuring signal transmission quality, and controlling power consumption in the current DVFSC mode. For example, if the metal layer thickness of the chip is thin, the metal wire spacing is moderate, and the insulation layer thickness is within a certain range (these are the actual states of the fourth type of process parameters), according to relevant experience and test data, the fourth voltage of 0.7V (example value) will be set accordingly. By locating the relevant part of the physical performance of the load element in the target entry, this fourth voltage can be obtained, which reflects the voltage that should be set to enable the chip to work normally from the perspective of the physical structure of the load element.

[0049] In some optional embodiments, determining the dynamic voltage based on the first voltage, the second voltage, the third voltage and the fourth voltage includes: obtaining a first weight coefficient of the first voltage, a second weight coefficient of the second voltage, a third weight coefficient of the third voltage and a fourth weight coefficient of the fourth voltage; and calculating the dynamic voltage based on the first voltage, the first weight coefficient, the second voltage, the second weight coefficient, the third voltage, the third weight coefficient, the fourth voltage and the fourth weight coefficient.

[0050] Specifically, by assigning corresponding weight coefficients (first weight coefficient, second weight coefficient, third weight coefficient and fourth weight coefficient) to the voltages (first voltage, second voltage, third voltage and fourth voltage) corresponding to different types of process parameters, and then performing weighted calculation based on these weight coefficients, a dynamic voltage value that comprehensively considers various characteristics of the chip is obtained. It more accurately fits the complex situation of the chip in actual work, fully considers the differences in the impact of different process parameters on the chip voltage requirements, ensures that the determined dynamic voltage can enable the chip to achieve a good balance in performance, power consumption and stability, and ensures that the chip runs stably and efficiently in the corresponding DVFSC mode.

[0051] The first weight coefficient (corresponding to the first voltage, the voltage corresponding to the process parameters related to the electrical performance of the transistor): It reflects the relative importance of the electrical performance parameters of the transistor to the overall voltage requirements of the chip. For example, the electrical performance parameters of the transistor, such as the threshold voltage and carrier mobility, have a key impact on whether the chip can start normally, at what frequency it can work efficiently, and the power consumption level. If the operating performance and power consumption of the chip are highly sensitive to the electrical performance of the transistor, such as in some application scenarios with extremely high requirements for data processing speed, the switching speed of the transistor (closely related to carrier mobility) plays a decisive role, then the first weight coefficient will be relatively large to highlight the importance of the first voltage corresponding to this part of the parameters in determining the dynamic voltage.

[0052] The second weight coefficient (corresponding to the second voltage, the voltage corresponding to the process parameters related to the electrical performance of the load element): reflects the proportion of the electrical performance parameters of the load element in the overall voltage requirement of the chip. The electrical performance of load elements such as parasitic capacitance and resistance in the chip has a significant impact on signal transmission speed, power loss and other aspects. In some applications with high requirements for signal integrity or strict power consumption restrictions, the impact of the electrical performance parameters of the load element cannot be ignored. At this time, the second weight coefficient will be reasonably set according to its importance to reflect the role of the second voltage in comprehensively determining the dynamic voltage.

[0053] The third weight coefficient (corresponding to the third voltage, the voltage corresponding to the process parameters related to the physical performance of the transistor): mainly considers the weight of the influence of the physical performance parameters of the transistor on the voltage requirements of the chip. Although the physical performance parameters of the transistor (such as physical size, tightness of material layer bonding, etc.) indirectly affect the electrical performance of the chip, the small physical size of the transistor may cause heat dissipation problems, which in turn affects the stable operation of the chip under high load, which needs to be alleviated by appropriate voltage adjustment. Therefore, the third weight coefficient is determined according to the degree of influence of these physical performance parameters on the overall performance and stability of the chip, indicating the proportion of the third voltage in the final dynamic voltage determination process.

[0054] The fourth weight coefficient (corresponding to the fourth voltage, the voltage corresponding to the process parameters related to the physical performance of the load element): represents the importance of the physical performance parameters of the load element to the chip voltage setting. For example, the physical performance parameters of the load element such as the thickness of the metal layer, the spacing between metal wires, and the thickness of the insulating layer are related to the stability of the chip, signal electromagnetic interference, and leakage. These parameters play a key role in ensuring the reliable operation of the chip and avoiding failures caused by physical structural factors. Accordingly, the fourth weight coefficient will be assigned an appropriate value based on its importance.

[0055] The corresponding weight coefficients are determined by the performance goals that the chip focuses on, such as focusing on high-performance computing (in this case, the weight coefficient related to the electrical performance of the transistor is larger), low power consumption and long battery life (the weight coefficients related to the electrical performance and physical performance of the load element are larger), and other different application scenarios. For example, for LPDDR chips used in mobile devices, due to their sensitivity to power consumption, the second weight coefficient (involving the impact of the electrical performance of the load element on power consumption) and the fourth weight coefficient (the physical performance of the load element ensures stability and low leakage to save electricity) may be relatively increased to ensure that the need to reduce power consumption is fully considered when determining the dynamic voltage. Assume that the first voltage , the first weight coefficient ; Second voltage , the second weight coefficient ; The third voltage , the third weight coefficient ; The fourth voltage , the fourth weight coefficient , we can calculate: dynamic voltage By determining the dynamic voltage in this weighted calculation method, the chip characteristics from transistor electrical performance, load element electrical performance, transistor physical performance to load element physical performance can be comprehensively considered.

[0056] The setting of different weight coefficients makes the proportion of the voltage corresponding to each part of the process parameters in the final dynamic voltage consistent with the actual situation of its overall impact on the chip, avoiding the problem of a single factor dominating or certain factors being ignored, making the determined dynamic voltage more scientific and reasonable, and better able to meet the chip's precise voltage requirements under different working states and application scenarios, ensuring that the chip runs stably and efficiently in the established DVFSC mode, and achieving optimization and coordination in many aspects such as performance, power consumption and stability.

[0057] The implementation of the embodiment of the present invention includes the following beneficial effects: The embodiment of the present invention provides a method for determining the dynamic voltage of an LPDDR chip, including: obtaining the process parameters of the LPDDR chip; determining the parameter type according to the process parameters, the parameter type characterizing the type of the process parameters; determining the DVFSC mode of the LPDDR chip according to the parameter type and a preset data table; determining the dynamic voltage of the LPDDR chip according to the DVFSC mode, the preset data table and the process parameters. The present application can effectively make up for the shortcomings of the existing method, determine the DVFSC mode of the LPDDR chip through the process parameters of the LPDDR chip, and thus calculate the dynamic voltage under the DVFSC mode. Therefore, when the DVFSC mode is a low-frequency mode, the corresponding dynamic voltage can be calculated to improve the stability of the LPDDR chip.

[0058] Second, refer to Figure 2 , an embodiment of the present invention provides a dynamic voltage determination system for an LPDDR chip, comprising: The first module is used to obtain the process parameters of the LPDDR chip; A second module is used to determine a parameter type according to the process parameter, wherein the parameter type represents the type of the process parameter; The third module is used to determine the DVFSC mode of the LPDDR chip according to the parameter type and the preset data table; The fourth module is used to determine the dynamic voltage of the LPDDR chip according to the DVFSC mode, the preset data table and the process parameters.

[0059] It can be seen that the contents of the above method embodiments are all applicable to the present system embodiments, the functions specifically implemented by the present system embodiments are the same as those of the above method embodiments, and the beneficial effects achieved are also the same as those achieved by the above method embodiments.

[0060] Thirdly, refer to Figure 3 , an embodiment of the present invention provides a memory testing device, comprising: at least one processor; at least one memory for storing at least one program; When at least one program is executed by at least one processor, the at least one processor implements the above method.

[0061] It can be seen that the contents of the above method embodiments are all applicable to the present device embodiments, the functions specifically implemented by the present device embodiments are the same as those of the above method embodiments, and the beneficial effects achieved are also the same as those achieved by the above method embodiments.

[0062] In a fourth aspect, in addition, the embodiments of the present application further disclose a computer program product or a computer program, which is stored in a computer storable medium. The processor of a computer device can read the computer program from a computer readable storage medium, and the processor executes the computer program so that the computer device executes the above method or the above system. Similarly, the contents in the above method embodiments are all applicable to the storage medium embodiments, and the functions specifically implemented by the storage medium embodiments are the same as those in the above method embodiments, and the beneficial effects achieved are also the same as those achieved by the above method embodiments.

[0063] It is understood that all or some steps and systems in the disclosed method above can be implemented as software, firmware, hardware and appropriate combinations thereof. Some physical components or all physical components can be implemented as software executed by a processor, such as a central processing unit, a digital information processor or a microprocessor, or implemented as hardware, or implemented as an integrated circuit, such as an application-specific integrated circuit. Such software can be distributed on a computer-readable medium, and the computer-readable medium can include a computer storage medium (or a non-transitory medium) and a communication medium (or a temporary medium). As known to those of ordinary skill in the art, the term computer storage medium includes volatile and non-volatile, removable and non-removable media implemented in any method or technology for storing information (such as computer-readable instructions, data structures, program modules or other data). Computer storage media include, but are not limited to, RAM, ROM, EEPROM, flash memory or other memory technology, CD-ROM, digital versatile disk (DVD) or other optical disk storage, magnetic cassette, magnetic tape, disk storage or other magnetic storage device, or any other medium that can be used to store desired information and can be accessed by a computer. Furthermore, it is well known to those skilled in the art that communication media generally contain computer readable instructions, data structures, program modules, or other data in modulated data information such as carrier waves or other transport mechanisms, and may include any information delivery media.

[0064] The embodiments of the present invention are described in detail above with reference to the accompanying drawings, but the present invention is not limited to the above embodiments, and various changes can be made within the knowledge scope of ordinary technicians in the technical field without departing from the purpose of the present invention.

Claims

1. A method for determining a dynamic voltage of an LPDDR chip, characterized in that: include: Get the process parameters of the LPDDR chip; determining a parameter type according to the process parameter, wherein the parameter type represents a type of the process parameter; Determine the DVFSC mode of the LPDDR chip according to the parameter type and the preset data table; The dynamic voltage of the LPDDR chip is determined according to the DVFSC mode, the preset data table and the process parameters.

2. The method according to claim 1, characterized in that The determining the parameter type according to the process parameter comprises: determining parameter performance based on the process parameters; In the case where the parameter performance characterization indicates that the process parameter is an electrical performance parameter, the process parameter indicating the electrical performance of the transistor is configured as a first type, and / or the process parameter indicating the electrical performance of the load element is configured as a second type; In the case where the parameter performance characterization indicates that the process parameter is a physical performance parameter, the process parameter indicating the physical performance of the transistor is configured as a third type, and / or the process parameter indicating the physical performance of the load element is configured as a fourth type.

3. The method according to claim 2, characterized in that The determining the DVFSC mode of the LPDDR chip according to the parameter type and the preset data table includes: In the case where the parameter type is configured as the first type, searching the preset data table for a first mode corresponding to the first type, and configuring the DVFSC mode as the first mode; When the parameter type is configured as the second type, searching the preset data table for a second mode corresponding to the second type, and configuring the DVFSC mode as the second mode; In the case where the parameter type is configured as the third type, searching the preset data table for a third mode corresponding to the third type, and configuring the DVFSC mode as the third mode; In the case where the parameter type is configured as the fourth type, searching the preset data table for a fourth mode corresponding to the fourth type, configuring the DVFSC mode as the fourth mode, the first mode indicating a high frequency mode, The second mode and the third mode indicate low frequency modes.

4. The method according to claim 3, characterized in that The determining the dynamic voltage of the LPDDR chip according to the DVFSC mode, the preset data table and the process parameters includes: Determine a target entry in the preset data table based on the DVFSC mode; The dynamic voltage is determined according to the process parameters and the target entry, and the dynamic voltage represents a voltage preset according to different process parameters.

5. The method according to claim 4, characterized in that After determining the target entry in the preset data table based on the DVFSC mode, the method further includes: Determine a voltage calculation formula according to the target item; The dynamic voltage is obtained by substituting the process parameters into the voltage calculation formula for calculation.

6. The method according to claim 4, characterized in that The determining the dynamic voltage according to the process parameter and the target item includes: Acquire a first voltage corresponding to the process parameter of the first type in the target entry; acquire a second voltage corresponding to the process parameter of the second type in the target entry; Acquire a third voltage corresponding to the process parameter of the third type in the target entry; acquire a fourth voltage corresponding to the process parameter of the fourth type in the target entry; The dynamic voltage is determined according to the first voltage, the second voltage, a third voltage, and a fourth voltage.

7. The method according to claim 6, characterized in that The determining the dynamic voltage according to the first voltage, the second voltage, the third voltage and the fourth voltage comprises: Obtaining a first weight coefficient of the first voltage, a second weight coefficient of the second voltage, a third weight coefficient of the third voltage, and a fourth weight coefficient of the fourth voltage; The dynamic voltage is calculated according to the first voltage, the first weight coefficient, the second voltage, the second weight coefficient, the third voltage, the third weight coefficient, the fourth voltage and the fourth weight coefficient.

8. A dynamic voltage determination system for an LPDDR chip, characterized in that: include: The first module is used to obtain the process parameters of the LPDDR chip; A second module is used to determine a parameter type according to the process parameter, wherein the parameter type represents the type of the process parameter; The third module is used to determine the DVFSC mode of the LPDDR chip according to the parameter type and the preset data table; The fourth module is used to determine the dynamic voltage of the LPDDR chip according to the DVFSC mode, the preset data table and the process parameters.

9. A memory testing device, characterized in that: include: at least one processor; at least one memory for storing at least one program; When the at least one program is executed by the at least one processor, the at least one processor implements the method according to any one of claims 1 to 7.

10. A computer-readable storage medium storing a program executable by a processor, characterized in that: The processor-executable program is used to perform the method according to any one of claims 1 to 7 when executed by the processor.

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