Semiconductor device, preparation method and device

Abstract

The invention discloses a semiconductor device, a preparation method and a preparation device. The preparation method comprises the following steps: pretreating a plastic package material to obtain a liquid plastic package material; filling the first part with a liquid plastic package material; the second component and the first component are subjected to mold closing operation, so that at least part of the structure of the second component is wrapped by the liquid plastic packaging material; and solidifying the liquid plastic packaging material and combining the solidified liquid plastic packaging material with the second component to obtain the semiconductor device. According to the method provided by the invention, the solid plastic package material is converted into the liquid plastic package material, and then the liquid plastic package material is injected into the first component to be combined with the second component, so that the damage of the semiconductor device caused by adhesion of the plastic package material to the side wall of the first component is avoided, and the qualified rate of the semiconductor device is improved.

Description

Technical Field

[0001] The embodiments of the present application relate to the technical field of electronic devices, and in particular to a semiconductor device, a preparation method and an apparatus. Background Art

[0002] During the semiconductor device packaging process, packaging materials easily adhere to the mold and the semiconductor device, thereby causing damage to the semiconductor device. Summary of the invention

[0003] The embodiments of the present application provide a semiconductor device, a preparation method and an apparatus to solve the technical problem in the prior art that packaging materials are easily adhered to a mold and a semiconductor device, resulting in damage to the semiconductor device.

[0004] In order to solve the above technical problems, the embodiments of the present application disclose the following technical solutions:

[0005] In a first aspect, a method for preparing a semiconductor device is provided, comprising:

[0006] Pre-treating the plastic packaging material to obtain a liquid plastic packaging material;

[0007] Filling the liquid molding material into the first component;

[0008] Performing a mold closing operation on the second component and the first component so that at least a portion of the structure of the second component is covered by the liquid molding material;

[0009] The liquid molding material is solidified and combined with the second component to obtain a semiconductor device.

[0010] In combination with the first aspect, the step of pre-treating the plastic packaging material includes:

[0011] Heating the plastic packaging material to obtain the liquid plastic packaging material;

[0012] Wherein, the plastic packaging material includes any one of block plastic packaging material, powder plastic packaging material and gel plastic packaging material.

[0013] In combination with the first aspect, the temperature of the heating treatment is 170-200°C.

[0014] In combination with the first aspect, the preparation method further includes preheating the first component, and the preheating method includes:

[0015] At least the inner surface of the first component is preheated.

[0016] In combination with the first aspect, the temperature of the preheating treatment is not lower than the temperature of the heating treatment.

[0017] In combination with the first aspect, the preparation method further includes performing a heating treatment or a preheating treatment on at least the surface of the second component.

[0018] In combination with the first aspect, the heating method includes one or more of gas heating, electromagnetic induction heating, electric heating wire heating and open flame heating.

[0019] In a second aspect, a semiconductor device manufacturing apparatus is provided, the apparatus comprising:

[0020] liquefaction components;

[0021] a filling assembly, at least a portion of the structure of the filling assembly being located in the liquefaction assembly;

[0022] a first component, the first component being arranged opposite to the filling component;

[0023] a transport assembly, the transport assembly being located on one side of the first component or the filling assembly;

[0024] Among them, the liquefaction component is used to pre-treat the molding material located in the filling component to obtain liquid molding material; the filling component is used to fill the liquid molding material into the first component; the conveying component conveys the second component to the first component so that at least part of the structure of the second component is covered by the liquid molding material.

[0025] In combination with the second aspect, the liquefaction component surrounds the outside of the filling component, and the liquefaction component heats the molding material to liquefy the molding material.

[0026] In combination with the second aspect, the device further includes a preheating component, wherein the preheating component is connected to the first component, and the preheating component is used to heat the first component and / or the liquid molding material.

[0027] In combination with the second aspect, the device further includes a conveying component, wherein the conveying component is connected to the filling component, and the conveying component is used to convey the plastic packaging material to the filling component.

[0028] In combination with the second aspect, the first component is a carrier that opens upward, and the first component is used to carry the liquid molding material.

[0029] In combination with the second aspect, the liquefaction component and / or the preheating component is further used to heat the second component and / or the liquid molding material.

[0030] In a third aspect, a semiconductor device is provided, wherein the semiconductor device is prepared by the semiconductor device preparation method as described in any one of the first aspect, or is prepared by the semiconductor device preparation apparatus as described in any one of the second aspect.

[0031] One of the above technical solutions has the following advantages or beneficial effects:

[0032] Compared with the prior art, the semiconductor device preparation method of the present application includes: pre-treating the plastic encapsulation material to obtain a liquid plastic encapsulation material; filling the liquid plastic encapsulation material into the first component; performing a mold closing operation on the second component and the first component so that at least part of the structure of the second component is covered by the liquid plastic encapsulation material; solidifying the liquid plastic encapsulation material and combining it with the second component to obtain a semiconductor device. The method provided by the present application converts the solid plastic encapsulation material into a liquid plastic encapsulation material and then injects it into the first component and combines it with the second component, thereby avoiding the plastic encapsulation material adhering to the side wall of the first component to cause damage to the semiconductor device, and improving the qualified rate of the semiconductor device.

[0033] The present application also provides a semiconductor device preparation device, the device includes: a liquefaction component; a filling component, at least part of the structure of the filling component is located in the liquefaction component; a first component, the first component and the filling component are arranged opposite to each other; a conveying component, the conveying component is located on one side of the first component or the filling component; wherein the liquefaction component is used to pre-treat the plastic encapsulation material located in the filling component to obtain a liquid plastic encapsulation material; the filling component is used to fill the liquid plastic encapsulation material into the first component; the conveying component conveys the second component to the first component so that at least part of the structure of the second component is covered by the liquid plastic encapsulation material. The device provided by the present application can convert the solid plastic encapsulation material into liquid plastic encapsulation material through the liquefaction component, and then introduce it into the first component through the filling component, and the conveying component conveys the second component to the first component for assembly, thereby avoiding the plastic encapsulation material adhering to the side wall of the first component to cause damage to the semiconductor device, thereby improving the qualified rate of the semiconductor device. BRIEF DESCRIPTION OF THE DRAWINGS

[0034] The technical solution and other beneficial effects of the present application will be made apparent by describing in detail the specific implementation methods of the present application in conjunction with the accompanying drawings.

[0035] Figure 1 A schematic diagram of the method flow structure provided in the embodiment of the present application;

[0036] Figure 2 A schematic cross-sectional structure diagram of a solid plastic encapsulation material provided in an embodiment of the present application being heated into a liquid plastic encapsulation material and outputted to a first component;

[0037] Figure 3 A schematic cross-sectional structure diagram of a transport assembly transporting a second component provided in an embodiment of the present application;

[0038] Figure 4 A schematic cross-sectional structure diagram of a transport assembly provided in an embodiment of the present application transporting a second component into a first component;

[0039] Figure 5 A schematic cross-sectional structure diagram of cooling the second component provided in an embodiment of the present application;

[0040] Figure 6 A schematic cross-sectional structure diagram of a preheating component and a heating component provided in an embodiment of the present application jointly heating a solid plastic encapsulation material and a liquid plastic encapsulation material;

[0041] Figure 7 A schematic cross-sectional structure diagram of a first component provided in one embodiment of the present application;

[0042] Figure 8 A schematic diagram of the cross-sectional structure of a finished semiconductor device after cooling provided in an embodiment of the present application.

[0043] The reference numerals are as follows:

[0044] 1-transport component, 2-liquefaction component, 3-molding material, 4-filling component, 5-first component, 6-liquid molding material, 7-preheating component, 8-second component, 9-handling component, 10-heating layer. DETAILED DESCRIPTION

[0045] The following will be combined with the drawings in the embodiments of the present application to clearly and completely describe the technical solutions in the embodiments of the present application. In the description of the present application, it is necessary to understand that the orientation or position relationship indicated by the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise", etc. is based on the orientation or position relationship shown in the drawings, which is only for the convenience of describing the present application and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation to the present application. In addition, the terms "first" and "second" are only used for descriptive purposes, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, the features defined as "first" and "second" can explicitly or implicitly include one or more of the features. In the description of the present application, the meaning of "multiple" is two or more, unless otherwise clearly and specifically defined.

[0046] It should be understood that although the terms first, second, etc. may be used herein to describe various components, these components should not be limited to these terms. These terms are used to distinguish one component from another component. For example, a first component may be referred to as a second component, and similarly, a second component may be referred to as a first component without departing from the scope of the present invention.

[0047] It should be understood that when a component is said to be "on" or "connected" another component, it can be directly on or connected to another component, or there may be an intervening component. Other words used to describe the relationship between components should be interpreted in a similar manner.

[0048] As used herein, the term "layer" refers to a material portion including an area with a thickness. The layer has a top side and a bottom side, wherein the bottom side of the layer is relatively close to the substrate, and the top side is relatively far away from the substrate. The layer can extend over the entire lower or upper structure, or can have a range that is less than the range of the lower or upper structure. In addition, the layer can be a region of a uniform or non-uniform continuous structure whose thickness is less than the thickness of the continuous structure. For example, the layer can be located between the top and bottom surfaces of the continuous structure or between any set of horizontal planes at the top and bottom surfaces. The layer can extend horizontally, vertically and / or along a tapered surface. The substrate can be a layer, which can include one or more layers, and / or can have one or more layers on, above and / or below it. The layer can include multiple layers. For example, an interconnect layer can include one or more conductive layers and a contact layer (wherein contacts, interconnects and one or more dielectric layers are formed.

[0049] This article uses a Cartesian coordinate system (expressed as X, Y and Z) to represent the cross-section of the memory in various directions, wherein the direction of the XY plane is parallel to the substrate and the Z direction is perpendicular to the substrate.

[0050] It should be noted that the diagrams provided in the embodiments of the present invention are only used to illustrate the basic concept of the present invention in a schematic manner. Although the diagrams only show components related to the present invention and are not drawn according to the number, shape and size of components in actual implementation, the type, quantity and proportion of each component in actual implementation may be changed arbitrarily, and the component layout type may also be more complicated.

[0051] The memory in the embodiment of the present invention may be a wafer or a three-dimensional memory. The three-dimensional memory may be applied to communication products, consumer electronics products, automotive products, aerospace products, artificial intelligence products or big data, etc. Among them, consumer electronics products include but are not limited to mobile phones, computers, tablets, cameras, smart glasses or game products, etc.

[0052] See also Figures 1 to 7 , Figure 1 It is a schematic diagram of the method flow structure provided in the embodiment of the present application.

[0053] The present invention provides a method for preparing a semiconductor device, comprising:

[0054] S1: pre-treating the plastic packaging material to obtain a liquid plastic packaging material;

[0055] Specifically, Figure 2As shown, the method for pre-treating the solid plastic encapsulation material 3 is: heat-treating the solid plastic encapsulation material 3 to obtain the liquid plastic encapsulation material 6, the temperature of the heating treatment is 170-200°C, generally speaking, the solid plastic encapsulation material 3 includes any one of a block plastic encapsulation material, a powder plastic encapsulation material and a gel plastic encapsulation material. The temperature of the heating treatment is different according to the type of the solid plastic encapsulation material 3. When the solid plastic encapsulation material 3 is block-shaped, the temperature of the heating treatment can be higher, and when the solid plastic encapsulation material 3 is gel-shaped, the temperature of the heating treatment can be lower. It should be noted that, under the same solid plastic encapsulation material 3, when the temperature of the heating treatment is close to 200°C, the solid plastic encapsulation material 3 is converted into a liquid faster, and when the temperature of the heating treatment is close to 170°C, the solid plastic encapsulation material 3 is more stable after being converted into a liquid. It should be understood that the temperatures that can be selected for the heating treatment include, but are not limited to, 170° C., 172° C., 173° C., 175° C., 178° C., 179° C., 180° C., 182° C., 185° C., 188° C., 190° C., 192° C., 195° C., 198° C., and 200° C. In some other embodiments of the present application, when the material of the solid plastic encapsulation material 3 is different, a heating treatment temperature less than 170° C. or greater than 200° C. can be selected to heat the solid plastic encapsulation material 3.

[0056] S2: filling the first component with liquid molding material;

[0057] Specifically, Figure 2 As shown, after the solid molding material 3 is converted into liquid, the liquid molding material 6 is filled into the first component 5 through the filling component 4, and the first component 5 carries the liquid molding material 6 to ensure that the liquid molding material 6 will not splash during subsequent molding.

[0058] S3: performing a mold closing operation on the second component and the first component, so that at least a portion of the structure of the second component is covered by the liquid molding material;

[0059] Specifically, Figure 3 and Figure 4 As shown, the second component 8 includes a semiconductor device before molding, and at least a portion of the structure or the entire structure of the second component 8 is immersed in a liquid molding material 6, so that the liquid molding material 6 can cover the second component 8, thereby achieving isolation from the outside.

[0060] S4: solidify the liquid molding material and combine it with the second component to obtain a semiconductor device.

[0061] Specifically, Figure 5As shown, after the liquid molding material 6 covers the second component 8, since the liquid molding material 6 has a high temperature, in order to prevent the liquid molding material 6 from being displaced or accumulated due to external force during the movement, it is necessary to wait for the liquid molding material 6 to cool and solidify before moving the second component 8. Generally speaking, the cooling method can be natural cooling or cooling by adding dry ice, liquid nitrogen, etc. to reduce the temperature around the second component 8 ( Figure 5 The arrow in the figure indicates the direction of the cold air flow), thereby accelerating the solidification of the liquid plastic packaging material 6, and after solidification, a finished semiconductor device can be obtained, such as Figure 8 shown.

[0062] In some optional embodiments of the present disclosure, the preparation method of the present application further includes preheating the first component 5, and the preheating method includes: preheating at least the inner surface of the first component 5. Specifically, the inner surface of the first component 5 is preheated by providing a heating layer 10 on the inner surface of the first component 5 (e.g. Figure 7 As shown), or a preheating assembly 7 is provided on the outside of the first component 5 to heat the entire first component 5. It should be understood that if the first component 5 is not preheated, when the liquid molding material 6 is filled into the first component 5, the temperature difference between the liquid molding material 6 and the inner surface of the first component 5 is too large, and the liquid molding material 6 in contact with the inner surface of the first component 5 will solidify, resulting in uneven liquid molding material 6. Therefore, after the first component 5 is preheated, the temperature difference between the inner surface of the first component 5 and the liquid molding material 6 can be reduced, ensuring that the liquid molding material 6 can remain liquid for a long time after filling.

[0063] In some optional embodiments of the present disclosure, the temperature of the preheating treatment is not lower than the temperature of the heating treatment. Specifically, the temperature range for heating the liquid molding material 6 is: 170-200°C. In order to reduce the temperature difference between the liquid molding material 6 and the first component 5 and prevent the liquid molding material 6 from solidifying when it contacts the first component 5, the inner surface of the first component 5 is preheated to the same or higher temperature as the liquid molding material 6, thereby ensuring that the liquid molding material 6 has a certain fluidity and can be more uniform and stable after mixing.

[0064] In some optional embodiments of the present disclosure, the preparation method further includes heating or preheating at least the surface of the second component 8. Specifically, when the second component 8 is combined with the first component 5, the liquid molding material 6 still maintains a temperature of 170-200°C. If the second component 8 contacts the liquid molding material 6 at room temperature, a small portion of the liquid molding material 6 will solidify, thereby causing the second component 8 to be unevenly molded or particles to remain in the molding, resulting in non-compliant semiconductor devices. Therefore, before the second component 8 is combined with the first component 5, at least the surface of the second component 8 or the entire second component 8 is heated or preheated, and the heating or preheating temperature is at least not lower than the temperature of the liquid molding material 6, or it may also depend on the material of the second component 8. By heating the surface of the second component 8, it is easy for the liquid molding material 6 to penetrate into the various gaps of the second component 8, thereby making the molding more uniform.

[0065] In some optional embodiments of the present disclosure, the heating method includes one or more of gas heating, electromagnetic induction heating, electric heating wire heating and open flame heating. Specifically, when heating the liquid molding material 6, the first component 5 and the second component 8, due to the different composition methods of each structure, different heating methods can be selected. For example, the liquid molding material 6 is more suitable for electromagnetic induction heating and electric heating wire heating, which is easier to control the temperature and can avoid uneven heating of the solid molding material 3; and the first component 5 can be heated by open flame, gas, electromagnetic induction heating or electric heating wire, and can heat only the inner surface of the first component 5 or heat the entire first component 5, ultimately ensuring that the inner surface of the first component 5 has a temperature not lower than that of the liquid molding material 6; and the second component 8 is suitable for gas heating, and can heat only the side that needs to be molded or heat the entire second component 8, and the temperature difference between the heated second component 8 and the liquid molding material 6 is smaller. It should be understood that, if Figure 6 As shown, the liquid molding material 6, the first component 5 and the second component 8 can be heated by only one heating method or by two or three heating methods. By heating the liquid molding material 6, the first component 5 and the second component 8, the smoothness of the molding process can be improved, thereby improving the molding qualification rate of the second component 8.

[0066] See also Figures 2 to 7The embodiment of the present application also provides a semiconductor device preparation device, which includes: a liquefaction component 2, a filling component 4, a first part 5 and a conveying component 9; at least part of the structure of the filling component 4 is located in the liquefaction component 2; the first part 5 is arranged opposite to the filling component 4; the conveying component is located on one side of the first part 5 or the filling component 4; wherein the liquefaction component 2 is used to pre-treat the solid molding material 3 located in the filling component 4 to obtain a liquid molding material 6; the filling component 4 is used to fill the liquid molding material 6 in the first component 5; the conveying component 9 conveys the second component 8 to the first component 5 so that at least part of the structure of the second component 8 is covered by the liquid molding material 6. Specifically, the filling component 4 passes through the liquefaction component 2, and the filling component 4 is filled with a solid plastic encapsulation material 3. The solid plastic encapsulation material 3 is converted into a liquid plastic encapsulation material 6 through the pretreatment of the liquefaction component 2. The liquid plastic encapsulation material 6 is filled into the first component 5 through the filling component 4, and then the conveying component 9 conveys the second component 8 to the first component and immerses it in the liquid plastic encapsulation material 6, and then takes out the second component 8 after a certain period of time. The device provided by the present application can prevent the solid plastic encapsulation material 3 from adhering to the side wall of the first component 5 to cause damage to the semiconductor device, thereby improving the qualified rate of plastic encapsulation of the semiconductor device.

[0067] like Figure 2 and Figure 7 As shown, in some optional embodiments of the present disclosure, the liquefaction component 2 surrounds the outside of the filling component 4, and the liquefaction component 2 heats the solid plastic encapsulation material 3 to liquefy the solid plastic encapsulation material 3. Specifically, the liquefaction component 2 may include one or more of a gas heating device, an electromagnetic induction heating device, an electric heating wire heating device, and an open flame heating device. The solid plastic encapsulation material 3 in the filling component 4 is heated by the above-mentioned device to convert the solid plastic encapsulation material 3 into a liquid plastic encapsulation material 6. By heating the solid plastic encapsulation material 3 in advance, it can be avoided that when the filling component 4 is filled with the solid plastic encapsulation material 3, the solid plastic encapsulation material 3 adheres to the side wall of the first component 5, thereby causing damage to the semiconductor device during plastic encapsulation.

[0068] like Figures 2 to 7 As shown, in some optional embodiments of the present disclosure, the device further includes a preheating component 7, which is connected to the first component 5, and the preheating component 7 is used to heat the first component 5 and / or the liquid molding material 6. Specifically, the preheating component 7 may include one or more of a gas heating device, an electromagnetic induction heating device, an electric heating wire heating device, and an open flame heating device. Heating the first component 5 by the preheating component 7 can ensure that the temperature difference between the liquid molding material 6 and the inner surface of the first component 5 is small, thereby avoiding the problem that a small amount of solidification of the liquid molding material 6 occurs when the liquid molding material 6 is filled into the first component 5, resulting in uneven liquid molding material 6.

[0069] like Figure 2As shown, in some optional embodiments of the present disclosure, the device also includes a conveying component 1, which is connected to the filling component 4, and the conveying component 1 is used to convey the solid plastic encapsulation material 3 to the filling component 4. Specifically, the filling component 4 is mainly used for filling after the liquid plastic encapsulation material 6 is liquefied, and the conveying component 1 conveys the solid plastic encapsulation material 3 to the filling component 4. It should be understood that when the solid plastic encapsulation material 3 in the filling component 4 is heated, due to thermal conductivity, the conveying component 1 also has a higher temperature, so a high temperature resistant material can be selected as the part of the conveying component 1 connected to the filling component 4. In some other embodiments of the present disclosure, the liquefaction component 2 can also heat the filling component 4 and part of the structure of the conveying component 1 together, so that the solid plastic encapsulation material 3 can be converted into a liquid plastic encapsulation material 6 or a solid-liquid mixed plastic encapsulation material 3 before being sent to the filling component 4, thereby increasing the conversion rate of the liquid plastic encapsulation material 6. Avoid uneven heating of the solid plastic encapsulation material 3 in the filling component 4.

[0070] like Figures 2 to 7 As shown, in some optional embodiments of the present disclosure, the first component 5 is an upwardly open carrier, and the first component 5 is used to carry the liquid molding material 6. Specifically, the first component 5 is set as an upwardly open container, which can facilitate the filling component 4 to fill the liquid molding material 6 into the first component 5, and can prevent the liquid molding material 6 from splashing onto the inner wall of the first component 5 during filling; and the open design can facilitate the second component 8 to contact with the liquid molding material 6 and complete the molding.

[0071] like Figure 6 As shown, in some optional embodiments of the present disclosure, the liquefaction component 2 and / or the preheating component 7 are also used to heat the second component 8 and / or the liquid molding material 6. Specifically, when heating the second component 8, it can be heated by the liquefaction component 2 or the preheating component 7 alone, or it can be heated by the liquefaction component 2 and the preheating component 7 together. When heated together, the second component 8 is heated faster and the heating efficiency is high; similarly, when heating the liquid molding material 6, it can be heated by the liquefaction component 2 or the preheating component 7 alone, or they can be heated together. The heated liquid molding material 6 can maintain fluidity and is more conducive to immersing in the gap of the second component 8, thereby improving the qualified rate of molding.

[0072] like Figure 8 As shown, the embodiment of the present application also provides a semiconductor device, which is prepared by the above semiconductor device preparation method, or prepared by the above semiconductor device preparation device. The semiconductor devices mentioned in the present application include power management components, power components and memory.

[0073] The semiconductor device, preparation method and apparatus provided in the embodiments of the present application are introduced in detail above. Specific examples are used herein to illustrate the principles and implementation methods of the present application. The description of the above embodiments is only used to help understand the technical solution and core idea of ​​the present application. Ordinary technicians in this field should understand that they can still modify the technical solutions recorded in the aforementioned embodiments, or replace some of the technical features therein with equivalents. However, these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present application.

Claims

1. A method for preparing a semiconductor device, characterized in that: include: Pre-treating the plastic packaging material to obtain a liquid plastic packaging material; Filling the liquid molding material into the first component; Performing a mold closing operation on the second component and the first component so that at least a portion of the structure of the second component is covered by the liquid molding material; The liquid molding material is solidified and combined with the second component to obtain a semiconductor device.

2. The method for preparing a semiconductor device according to claim 1, characterized in that: The step of pre-treating the plastic packaging material comprises: Heating the plastic packaging material to obtain the liquid plastic packaging material; Wherein, the plastic packaging material includes any one of block plastic packaging material, powder plastic packaging material and gel plastic packaging material.

3. The method for preparing a semiconductor device according to claim 2, characterized in that: The temperature of the heating treatment is 170-200°C.

4. The method for preparing a semiconductor device according to claim 3, characterized in that: The preparation method further includes preheating the first component, and the preheating method includes: At least the inner surface of the first component is preheated.

5. The method for preparing a semiconductor device according to claim 4, characterized in that: The temperature of the preheating treatment is not lower than the temperature of the heating treatment.

6. The method for preparing a semiconductor device according to claim 1 or 4, characterized in that: The preparation method further includes performing a heating treatment or a preheating treatment on at least the surface of the second component.

7. The method for preparing a semiconductor device according to claim 3, characterized in that: The heating method includes one or more of gas heating, electromagnetic induction heating, electric heating wire heating and open flame heating.

8. A semiconductor device manufacturing apparatus, characterized in that: The device comprises: liquefaction components; a filling assembly, at least a portion of the structure of the filling assembly being located in the liquefaction assembly; a first component, the first component being arranged opposite to the filling component; A transport component, the transport component is located on one side of the first component or the filling component; Among them, the liquefaction component is used to pre-treat the molding material located in the filling component to obtain liquid molding material; the filling component is used to fill the liquid molding material into the first component; the conveying component conveys the second component to the first component so that at least part of the structure of the second component is covered by the liquid molding material.

9. The semiconductor device manufacturing apparatus according to claim 8, characterized in that: The liquefaction component surrounds the outer side of the filling component, and the liquefaction component heats the plastic packaging material to liquefy the plastic packaging material.

10. The semiconductor device manufacturing apparatus according to claim 8, characterized in that: The device further comprises a preheating component, which is connected to the first component and is used to heat the first component and / or the liquid molding material.

11. The semiconductor device manufacturing apparatus according to claim 8, characterized in that: The device further comprises a conveying component, which is connected to the filling component and is used for conveying the plastic packaging material to the filling component.

12. The semiconductor device manufacturing apparatus according to claim 8, characterized in that: The first component is a carrier that opens upward, and is used to carry the liquid molding material.

13. The semiconductor device manufacturing apparatus according to claim 10, characterized in that: The liquefaction component and / or the preheating component are also used to heat the second component and / or the liquid molding material.

14. A semiconductor device, characterized in that: The semiconductor device is manufactured by the semiconductor device manufacturing method according to any one of claims 1 to 7, or is manufactured by the semiconductor device manufacturing apparatus according to any one of claims 8 to 13.

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