Terahertz broadband amplifier monolithic circuit
By adding broadband tuning capacitors and multi-stage power amplifier transistor structures to the THz broadband amplifier monolithic circuit, the problems of high complexity and long design cycle of THz broadband amplifier monolithic integrated circuits in the prior art are solved, and higher bandwidth, gain and power flatness are achieved, and circuit size and design complexity are reduced.
Patent Information
- Application Number
- CN202411645196.X
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-11-18
- Publication Date
- 2025-02-25
AI Technical Summary
The existing THz broadband amplifier monolithic integrated circuit has a complex structure, a long design cycle, a high frequency and a large bandwidth, which makes it difficult to reduce circuit complexity and shorten the design cycle.
A monolithic circuit design is adopted that includes an input matching network, an output matching network and an interstage matching network, where a broadband tuning capacitor is added to reduce losses, increase gain and output power, and broadband amplification is achieved through a multi-stage power amplifier transistor structure.
By adding broadband tuning capacitors, the bandwidth of the THz amplifier is expanded, the operating frequency band is tuned, the gain and power flatness are improved, the circuit size is reduced, and the design complexity and cycle are reduced.
Smart Images
Figure CN119519624A_ABST
Abstract
Description
Technical Field
[0001] The invention relates to the technical field of microwave, millimeter wave and terahertz monolithic circuits, and in particular to a terahertz broadband amplifier monolithic circuit. Background Art
[0002] In a broad sense, terahertz (THz) waves refer to electromagnetic waves with a frequency range of 0.1-10THz, where 1THz=1000GHz. THz waves occupy a very important position in the electromagnetic spectrum and are of great significance in promoting national economic development, enhancing national security, and improving international competitiveness. Therefore, research on THz technology has been continuously strengthened at home and abroad. In recent years, domestic THz technology has developed rapidly, and has made certain progress in security inspection, medical treatment, high-speed communication, time domain spectroscopy, concealed object imaging, astronomical technology, agriculture, and air pollution prevention and control. In order to realize the above-mentioned applications of THz, mature, stable and high-performance THz sources and related amplification, filtering, detection, frequency conversion, modulation, transmission and other devices are required, which greatly stimulates the demand for various high-performance THz devices.
[0003] Driven by materials science and Moore's Law, the cutoff frequency of semiconductor devices has entered the THz frequency band, which has led to a blowout development of solid-state THz devices and has begun to enter various application fields. In various systems, amplifiers are used to amplify weak signals. They determine the system's effective radius, anti-interference ability, communication quality and sensitivity, and are one of the most critical devices. Solid-state amplifiers implemented with various semiconductors provide the possibility of system integration, lightweight, and energy saving. Therefore, THz solid-state amplifiers will surely have broader development prospects and application needs in the future.
[0004] Currently, conventional THz broadband amplifier monolithic integrated circuit structures are relatively complex and have a long design cycle. One of the main reasons is that the THz band has a high frequency and a relatively large bandwidth, making broadband amplifier design difficult. Summary of the invention
[0005] The technical problem to be solved by the present invention is how to provide a terahertz broadband amplifier monolithic circuit which can reduce the complexity of the THz broadband amplifier monolithic integrated circuit, shorten the circuit design cycle, and reduce the size of the monolithic circuit.
[0006] In order to solve the above technical problems, the technical solution adopted by the present invention is: a terahertz broadband amplifier monolithic circuit, including an input matching network, a signal input end of the input matching network is the signal input end of the monolithic circuit, an output end of the input matching network is connected to an input end of a first driving-stage power amplifier transistor, an output end of the first driving-stage power amplifier transistor is connected to the input end of an output-stage power amplifier transistor via a first inter-stage matching network, the output end of the output-stage power amplifier transistor is connected to the input end of the output matching network, and the output end of the output matching network is the signal output end of the monolithic circuit; the signal output end of the bias network is connected to the bias signal input end of the first driving-stage power amplifier transistor and the bias signal input end of the output-stage power amplifier transistor; the input matching network, the output matching network and the inter-stage matching network include broadband tuning capacitors, which are used to reduce the loss of the terahertz broadband amplifier and improve the gain and output power of the broadband amplifier.
[0007] A further technical solution is that: the monolithic circuit also includes a second driving stage power amplifier transistor, the output end of the first inter-stage matching network is connected to an input end of the second driving stage power amplifier transistor, the output end of the second driving stage power amplifier transistor is connected to an input end of the third driving stage power amplifier transistor via the second inter-stage matching network, and so on, the output end of the Nth driving stage power amplifier transistor is connected to an input end of the output stage power amplifier transistor via the Nth inter-stage matching network, the output end of the output stage power amplifier transistor is connected to the input end of the output matching network, and the output end of the output matching network is the signal output end of the monolithic circuit; N is a natural number greater than or equal to 2.
[0008] The beneficial effect of adopting the above technical solution is that: the monolithic circuit described in the present application adds broadband tuning capacitors on both sides or one side of the wide and narrow lines (microstrip lines), and this broadband tuning capacitor can expand the bandwidth of the THz amplifier, tune the operating frequency band of the THz broadband amplifier, tune the gain and power flatness of the THz broadband amplifier, reduce the circuit size of the THz broadband amplifier, reduce the design complexity of the THz broadband amplifier monolithic integrated circuit, and shorten the circuit design cycle. BRIEF DESCRIPTION OF THE DRAWINGS
[0009] The present invention will be further described in detail below in conjunction with the accompanying drawings and specific embodiments.
[0010] Figure 1 is a principle block diagram of the single-chip circuit described in an embodiment of the present invention; Figure 2 is a schematic diagram of a first input matching network in a monolithic circuit according to an embodiment of the present invention; Figure 3is a schematic diagram of a second input matching network in the monolithic circuit according to an embodiment of the present invention; Figure 4 is a schematic diagram of a third input matching network in the monolithic circuit according to an embodiment of the present invention; Figure 5 is a schematic diagram of a first type of inter-stage matching network in a monolithic circuit according to an embodiment of the present invention; Figure 6 is a schematic diagram of a second inter-stage matching network in the monolithic circuit according to an embodiment of the present invention; Figure 7 is a schematic diagram of a third type of inter-stage matching network in the monolithic circuit according to an embodiment of the present invention; Figure 8 is a schematic diagram of a first output matching network in a monolithic circuit according to an embodiment of the present invention; Fig. 9 is a schematic diagram of a first output matching network in a monolithic circuit according to an embodiment of the present invention; Fig.10 is a schematic diagram of a first output matching network in a monolithic circuit according to an embodiment of the present invention; Among them: 1. the first input DC blocking capacitor; 2. the first microstrip line; 3. the first broadband tuning capacitor; 4. the second broadband tuning capacitor; 5. the second microstrip line; 6. the third microstrip line; 7. the third broadband tuning capacitor; 8. the fourth broadband tuning capacitor; 9. the fourth microstrip line; 10. the inter-stage DC blocking capacitor; 11. the fifth microstrip line; 12. the fifth broadband tuning capacitor; 13. the sixth broadband tuning capacitor; 14. the sixth microstrip line; 15. the seventh microstrip line; 16. the seventh broadband tuning capacitor; 17. the eighth broadband tuning capacitor; 18. the third path eighth microstrip line; 19. the output DC blocking capacitor. DETAILED DESCRIPTION
[0011] The following is a clear and complete description of the technical solutions in the embodiments of the present invention in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.
[0012] In the following description, many specific details are set forth to facilitate a full understanding of the present invention, but the present invention may also be implemented in other ways different from those described herein, and those skilled in the art may make similar generalizations without violating the connotation of the present invention. Therefore, the present invention is not limited to the specific embodiments disclosed below.
[0013] like Figure 1As shown, an embodiment of the present invention discloses a terahertz broadband amplifier monolithic circuit, comprising an input matching network, wherein the signal input end of the input matching network is the signal input end of the monolithic circuit, the output end of the input matching network is connected to an input end of a first driving-stage power amplifier transistor, an output end of the first driving-stage power amplifier transistor is connected to the input end of an output-stage power amplifier transistor via a first inter-stage matching network, the output end of the output-stage power amplifier transistor is connected to the input end of the output matching network, and the output end of the output matching network is the signal output end of the monolithic circuit; the signal output end of the bias network is connected to the bias signal input end of the first driving-stage power amplifier transistor and the bias signal input end of the output-stage power amplifier transistor; the input matching network, the output matching network and the inter-stage matching network include broadband tuning capacitors, which are used to reduce the loss of the terahertz broadband amplifier and improve the gain and output power of the broadband amplifier.
[0014] A further technical solution is that the monolithic circuit can also be an amplifier circuit with more than two stages. Therefore, the monolithic circuit can also include a second driver-stage power amplifier transistor, the output end of the first inter-stage matching network is connected to an input end of the second driver-stage power amplifier transistor, the output end of the second driver-stage power amplifier transistor is connected to an input end of the third driver-stage power amplifier transistor via the second inter-stage matching network, and so on. The output end of the Nth driver-stage power amplifier transistor is connected to an input end of the output-stage power amplifier transistor via the Nth inter-stage matching network, the output end of the output-stage power amplifier transistor is connected to the input end of the output matching network, and the output end of the output matching network is the signal output end of the monolithic circuit; N is a natural number greater than or equal to 2.
[0015] The bias network is used to apply voltage or current source to the THz power amplifier transistor, and the input, output matching network and inter-stage matching network are used to reduce the loss of the THz broadband amplifier and increase the gain and output power of the broadband amplifier. The difficulty in designing the THz broadband amplifier lies in the input, output matching network and inter-stage matching network.
[0016] A broadband tuning capacitor is added to the input matching network, the output matching network and the inter-stage matching network. The broadband tuning capacitor can expand the bandwidth of the THz amplifier, tune the operating frequency band of the THz broadband amplifier, tune the gain and power flatness of the THz broadband amplifier, reduce the circuit size of the THz broadband amplifier, reduce the complexity of the THz broadband amplifier monolithic integrated circuit design, and shorten the circuit design cycle.
[0017] In addition, the broadband tuning capacitors on both sides of the microstrip line can be the same or different, or the tuning capacitor on one side can be removed, that is, broadband tuning capacitors are added on both sides or one side of a microstrip line. This microstrip line is not limited to a high-impedance microstrip line, but can also be an arbitrary impedance microstrip line. Finally, it should be noted that this broadband tuning capacitor is not limited to a MIM monolithic capacitor, but can also be equivalently replaced by an open-circuited thin and long microstrip line or a fan-shaped microstrip line.
[0018] Furthermore, the input matching network has at least the following three specific forms: The first type: Figure 2 As shown, the input matching network includes a first input DC blocking capacitor 1, one end of the first input DC blocking capacitor 1 is the input end of the input matching network, and the other end of the first input DC blocking capacitor 1 is divided into three paths after passing through a first microstrip line 2, the first path is grounded through a first broadband tuning capacitor 3, the second path is grounded through a second broadband tuning capacitor 4, and the third path is connected to one end of a second microstrip line 5, and the other end of the second microstrip line 5 is the signal output end of the input matching network.
[0019] The second type, such as Figure 3 As shown, the input matching network includes a first input DC blocking capacitor 1, one end of the first input DC blocking capacitor 1 is the input end of the input matching network, and the other end of the first input DC blocking capacitor 1 is divided into three paths after passing through a first microstrip line 2, the first path is connected to the ground 3 through a first broadband tuning capacitor, the second path is connected to the ground through a second broadband tuning capacitor 4, and the third path is the signal output end of the input matching network.
[0020] The third type, such as Figure 4 As shown, the input matching network includes a first input DC blocking capacitor 1, one end of the first input DC blocking capacitor 1 is the input end of the input matching network, and the other end of the first input DC blocking capacitor 1 is divided into two paths after passing through a first microstrip line, the first path is grounded through a second broadband tuning capacitor 4, and the second path is the signal output end of the input matching network.
[0021] Furthermore, the specific structure of the first inter-stage matching network is the same as the specific structure of the second inter-stage matching network to the Nth inter-stage matching network, and the first inter-stage matching network has at least the following three specific forms: The first one, such as Figure 5As shown, the first inter-stage matching network includes a third microstrip line 6, one end of the third microstrip line 6 is the signal input end of the first inter-stage matching network, the other end of the third microstrip line 6 is divided into three paths, the first path is grounded via the third broadband tuning capacitor 7, the second path is grounded via the fourth broadband tuning capacitor 8, the third path is connected to one end of the fifth microstrip line 11 after passing through the fourth microstrip line 9 and the inter-stage DC capacitor 10 in sequence, the other end of the fifth microstrip line 11 is divided into three paths, the first path is grounded via the fifth broadband tuning capacitor 12, the second path is grounded via the sixth broadband tuning capacitor 13, the third path is connected to one end of the sixth microstrip line 14, and the other end of the sixth microstrip line 14 is the output end of the first inter-stage matching network.
[0022] The second type, such as Figure 6 As shown, the first inter-stage matching network includes a third microstrip line 6, one end of the third microstrip line 6 is the signal input end of the first inter-stage matching network, the other end of the third microstrip line 6 is divided into three paths, the first path is grounded via the third broadband tuning capacitor 7, the second path is grounded via the fourth broadband tuning capacitor 8, the third path is connected to one end of the fifth microstrip line 11 after passing through the inter-stage DC capacitor 10, the other end of the fifth microstrip line 11 is divided into three paths, the first path is grounded via the fifth broadband tuning capacitor 12, the second path is grounded via the sixth broadband tuning capacitor 13, and the third path is the output end of the first inter-stage matching network.
[0023] The third type, such as Figure 7 As shown, the first inter-stage matching network includes a third microstrip line 6, one end of the third microstrip line 6 is the signal input end of the first inter-stage matching network, the other end of the third microstrip line 6 is divided into two paths, the first path is grounded via the third broadband tuning capacitor 7, the second path is connected to one end of the fifth microstrip line 11 after passing through the inter-stage DC capacitor 10, the other end of the fifth microstrip line 11 is divided into two paths, the first path is grounded via the fifth broadband tuning capacitor 12, and the second path is the output end of the first inter-stage matching network.
[0024] Furthermore, the output matching network has at least the following three specific forms: The first one, such as Figure 8 As shown, the output matching network includes a seventh microstrip line 15, one end of the seventh microstrip line 15 is the input end of the output matching network, and the other end of the seventh microstrip line 15 is divided into three paths, the first path is grounded via the seventh broadband tuning capacitor 16, the second path is grounded via the eighth broadband tuning capacitor 17, and the third path is connected to one end of the output DC blocking capacitor 19 via the eighth microstrip line 18, and the other end of the output DC blocking capacitor 19 is the output end of the output matching network.
[0025] The second type, such as Fig. 9As shown, the output matching network includes a seventh microstrip line 15, one end of the seventh microstrip line 15 is the input end of the output matching network, and the other end of the seventh microstrip line 15 is divided into three paths, the first path is grounded via a seventh broadband tuning capacitor 16, the second path is grounded via an eighth broadband tuning capacitor 17, and the third path is connected to one end of an output DC blocking capacitor 19, and the other end of the output DC blocking capacitor 19 is the output end of the output matching network; The third type, such as Fig.10 As shown, the output matching network includes a seventh microstrip line 15, one end of the seventh microstrip line 15 is the input end of the output matching network, and the other end of the seventh microstrip line 15 is divided into two paths, the first path is grounded via the seventh broadband tuning capacitor 16, and the second path is connected to one end of the output DC blocking capacitor 19, and the other end of the output DC blocking capacitor 19 is the output end of the output matching network.
[0026] The THz broadband amplifier monolithic circuit method proposed in the present invention can reduce the complexity of THz broadband amplifier monolithic integrated circuit design, shorten the circuit design cycle, and reduce the size of the monolithic circuit.
Claims
1. A terahertz broadband amplifier monolithic circuit, characterized in that: The invention comprises an input matching network, wherein the signal input end of the input matching network is the signal input end of the monolithic circuit, the output end of the input matching network is connected to an input end of a first driving-stage power amplifier transistor, an output end of the first driving-stage power amplifier transistor is connected to the input end of an output-stage power amplifier transistor via a first inter-stage matching network, the output end of the output-stage power amplifier transistor is connected to the input end of the output matching network, and the output end of the output matching network is the signal output end of the monolithic circuit; the signal output end of the bias network is connected to the bias signal input end of the first driving-stage power amplifier transistor and the bias signal input end of the output-stage power amplifier transistor; the input matching network, the output matching network and the inter-stage matching network comprise broadband tuning capacitors for reducing the loss of the broadband terahertz amplifier and improving the gain and output power of the broadband amplifier.
2. The terahertz broadband amplifier monolithic circuit according to claim 1, characterized in that: The monolithic circuit also includes a second driving-stage power amplifier transistor, the output end of the first inter-stage matching network is connected to an input end of the second driving-stage power amplifier transistor, the output end of the second driving-stage power amplifier transistor is connected to an input end of a third driving-stage power amplifier transistor via the second inter-stage matching network, and so on, the output end of the Nth driving-stage power amplifier transistor is connected to an input end of an output-stage power amplifier transistor via the Nth inter-stage matching network, the output end of the output-stage power amplifier transistor is connected to the input end of the output matching network, and the output end of the output matching network is the signal output end of the monolithic circuit; N is a natural number greater than or equal to 2.
3. The terahertz broadband amplifier monolithic circuit according to claim 1 or 2, characterized in that: The input matching network comprises a first input DC blocking capacitor (1), one end of the first input DC blocking capacitor (1) being the input end of the input matching network, the other end of the first input DC blocking capacitor (1) being divided into three paths after passing through a first microstrip line (2), the first path being grounded through a first broadband tuning capacitor (3), the second path being grounded through a second broadband tuning capacitor (4), the third path being connected to one end of a second microstrip line (5), the other end of the second microstrip line (5) being the signal output end of the input matching network.
4. The terahertz broadband amplifier monolithic circuit according to claim 1 or 2, characterized in that: The input matching network comprises a first input DC blocking capacitor (1), one end of the first input DC blocking capacitor (1) being the input end of the input matching network, the other end of the first input DC blocking capacitor (1) being divided into three paths after passing through a first microstrip line 2, the first path being grounded through a first broadband tuning capacitor (3), the second path being grounded through a second broadband tuning capacitor (4), and the third path being the signal output end of the input matching network.
5. The terahertz broadband amplifier monolithic circuit according to claim 1 or 2, characterized in that: The input matching network comprises a first input DC blocking capacitor (1), one end of the first input DC blocking capacitor (1) being the input end of the input matching network, the other end of the first input DC blocking capacitor (1) being divided into two paths after passing through a first microstrip line, the first path being grounded through a second broadband tuning capacitor (4), and the second path being the signal output end of the input matching network.
6. The terahertz broadband amplifier monolithic circuit according to claim 1 or 2, characterized in that: The first inter-stage matching network comprises a third microstrip line (6), one end of the third microstrip line (6) being the signal input end of the first inter-stage matching network, the other end of the third microstrip line (6) being divided into three paths, the first path being grounded via a third broadband tuning capacitor (7), the second path being grounded via a fourth broadband tuning capacitor (8), the third path being connected to one end of a fifth microstrip line (11) via a fourth microstrip line (9) and an inter-stage DC capacitor (10) in sequence, the other end of the fifth microstrip line (11) being divided into three paths, the first path being grounded via a fifth broadband tuning capacitor (12), the second path being grounded via a sixth broadband tuning capacitor (13), the third path being connected to one end of a sixth microstrip line (14), the other end of the sixth microstrip line (14) being the output end of the first inter-stage matching network.
7. The terahertz broadband amplifier monolithic circuit according to claim 1 or 2, characterized in that: The first inter-stage matching network comprises a third microstrip line (6), one end of the third microstrip line (6) being the signal input end of the first inter-stage matching network, the other end of the third microstrip line (6) being divided into three paths, the first path being grounded via a third broadband tuning capacitor (7), the second path being grounded via a fourth broadband tuning capacitor (8), the third path being connected to one end of a fifth microstrip line (11) via an inter-stage DC capacitor (10), the other end of the fifth microstrip line (11) being divided into three paths, the first path being grounded via a fifth broadband tuning capacitor (12), the second path being grounded via a sixth broadband tuning capacitor (13), and the third path being the output end of the first inter-stage matching network.
8. The terahertz broadband amplifier monolithic circuit according to claim 1 or 2, characterized in that: The first inter-stage matching network comprises a third microstrip line (6), one end of the third microstrip line (6) being the signal input end of the first inter-stage matching network, the other end of the third microstrip line (6) being divided into two paths, the first path being grounded via a third broadband tuning capacitor (7), the second path being connected to one end of a fifth microstrip line (11) via an inter-stage DC capacitor (10), the other end of the fifth microstrip line (11) being divided into two paths, the first path being grounded via a fifth broadband tuning capacitor (12), the second path being the output end of the first inter-stage matching network.
9. The terahertz broadband amplifier monolithic circuit according to claim 1 or 2, characterized in that: The output matching network comprises a seventh microstrip line (15), one end of the seventh microstrip line (15) being the input end of the output matching network, the other end of the seventh microstrip line (15) being divided into three paths, the first path being grounded via a seventh broadband tuning capacitor (16), the second path being grounded via an eighth broadband tuning capacitor (17), and the third path being connected to one end of an output DC blocking capacitor (19) via an eighth microstrip line (18), the other end of the output DC blocking capacitor (19) being the output end of the output matching network.
10. The terahertz broadband amplifier monolithic circuit according to claim 1 or 2, characterized in that: The output matching network comprises a seventh microstrip line (15), one end of the seventh microstrip line (15) being the input end of the output matching network, the other end of the seventh microstrip line (15) being divided into three paths, the first path being grounded via a seventh broadband tuning capacitor (16), the second path being grounded via an eighth broadband tuning capacitor (17), and the third path being connected to one end of an output DC blocking capacitor (19), the other end of the output DC blocking capacitor (19) being the output end of the output matching network; Alternatively, the output matching network comprises a seventh microstrip line (15), one end of the seventh microstrip line (15) being the input end of the output matching network, the other end of the seventh microstrip line (15) being divided into two paths, the first path being grounded via a seventh broadband tuning capacitor (16), the second path being connected to one end of an output DC blocking capacitor (19), the other end of the output DC blocking capacitor (19) being the output end of the output matching network.