Power amplifier, radar system, and signal amplification method

Abstract

The invention provides a power amplifier, a radar system and a signal amplification method. The power amplifier comprises N gallium arsenide amplification modules, a gallium nitride amplification module and a power management module, each gallium arsenide amplification module amplifies the power of a radio frequency input signal stage by stage and outputs the amplified signal as an inter-stage amplification signal; the gallium nitride amplification module amplifies the power of the interstage amplification signal and outputs the power as a radio frequency output signal; the power management module is used for providing working voltage, grid bias voltage and drain control voltage. The gallium nitride power amplifier is internally provided with the power management module, power supply and power-on sequence control are carried out on different power amplifiers, negative electricity protection and drain electrode modulation functions are provided for the gallium nitride power amplifier, and therefore it is guaranteed that the power amplifier with low loss, high gain, high power supply additional efficiency and high stability is achieved.

Description

Technical Field

[0001] The present invention relates to the field of signal transmission, and in particular to a power amplifier, a radar system and a signal amplification method. Background Art

[0002] Radar system (Radio Detection and Ranging, referred to as RADAR) is an electronic system that uses radio waves to detect and measure target position, speed, direction and other information. Radar system has a wide range of functions and can be applied to many fields such as target detection and tracking, weather monitoring, military defense, earth observation, etc. As the requirements for signal transmission in the field of communication technology continue to increase, the manufacturing requirements for radar systems are also increasing.

[0003] The power amplifier is a key component that determines the performance of the entire radar system. As the requirements for signal transmission and detection continue to increase, how to manufacture high-performance, low-loss, stable and miniaturized power amplifiers has become an urgent problem that needs to be solved.

[0004] It should be noted that the above introduction to the technical background is only for the convenience of providing a clear and complete description of the technical solutions of the present application and for the convenience of understanding by those skilled in the art. It cannot be considered that the above technical solutions are well known to those skilled in the art simply because they are described in the background technology section of the present application. Summary of the invention

[0005] In view of the above-mentioned shortcomings of the prior art, an object of the present invention is to provide a power amplifier, a radar system and a signal amplification method, which are used to solve the problems of insufficient performance, high loss, poor stability and lack of miniaturization of the power amplifier in the prior art.

[0006] To achieve the above-mentioned object and other related objects, the present invention provides a power amplifier, comprising: N gallium arsenide amplifier modules, gallium nitride amplifier modules and a power management module, wherein N is an integer greater than or equal to 1;

[0007] The gallium arsenide amplification modules are cascaded in sequence to amplify the power of the radio frequency input signal step by step and output it as an inter-stage amplified signal;

[0008] The gallium nitride amplification module receives the inter-stage amplified signal, amplifies the power of the inter-stage amplified signal and outputs it as a radio frequency output signal;

[0009] The power management module is connected to each of the gallium arsenide amplifier modules and the gallium nitride amplifier module, and is used to provide a working voltage for each of the gallium arsenide amplifier modules and a gate bias voltage for the gallium nitride amplifier module;

[0010] The power management module is also connected to the output end of the gallium nitride amplifier module, and is used to output a drain control voltage to adjust the power gain of the gallium nitride amplifier module.

[0011] Optionally, the power management module includes a first power supply unit, a second power supply unit and a third power supply unit; the first power supply unit is used to generate each of the working voltages; the second power supply unit is used to generate the gate bias voltage; and the third power supply unit is used to generate the drain control voltage.

[0012] Optionally, the power management module further includes a timing control unit; the timing control unit is respectively connected to the second power supply unit and the third power supply unit to regulate the sequence of voltages output by the second power supply unit and the third power supply unit.

[0013] Optionally, the power amplifier further includes a digital signal control module, configured to generate a digital logic signal and output the digital logic signal to the power management module, so that the power management module turns on or off the output of the drain control voltage based on the digital logic signal.

[0014] Optionally, the power management module further includes a sampling unit for collecting and detecting the gate voltage of the gallium nitride amplifier module, and outputting a shutdown signal when it is detected that the gate voltage is missing or the gate voltage is a positive voltage, so as to shut down the output of the drain control voltage.

[0015] Optionally, the gallium nitride amplifier module is configured as a depletion-type gallium nitride amplifier.

[0016] To achieve the above object and other related objects, the present invention provides a radar system, comprising: a transceiver conversion switch and the power amplifier as described above;

[0017] The transmit / receive conversion switch is used to switch the radar system between a transmitting state and a receiving state;

[0018] The power amplifier is connected to the transmit-receive conversion switch and is turned off when the radar system is in a receiving state, and is turned on when the radar system is in a transmitting state.

[0019] To achieve the above object and other related objects, the present invention provides a signal amplification method based on the above power amplifier, comprising:

[0020] Amplify the power of the RF input signal step by step and output it as an inter-stage amplified signal;

[0021] amplifying the power of the inter-stage amplified signal and outputting it as a radio frequency output signal;

[0022] The power management module is used to provide various operating voltages and a gate bias voltage; the power management module also outputs a drain control voltage to adjust the gain of the gallium nitride amplifier module.

[0023] Optionally, when the power management module includes a timing control unit, when the power amplifier is turned on, the power management module first outputs the gate bias voltage and then outputs the drain control voltage; when the power amplifier is turned off, the power management module first turns off the drain control voltage and then turns off the gate bias voltage.

[0024] Optionally, when the power management module further includes a sampling unit, the output of the drain control voltage is turned off when it is detected that the gate voltage is missing or the gate voltage is a positive voltage.

[0025] As described above, the power amplifier, radar system and signal amplification method of the present invention have the following beneficial effects:

[0026] The present invention provides a new power amplifier with a built-in power management module, which not only provides power supply and power-on sequence control for different power amplifiers, but also provides negative power protection and drain modulation functions for gallium nitride power amplifiers, thereby ensuring the realization of a power amplifier with low loss, high gain, high power added efficiency and strong stability. BRIEF DESCRIPTION OF THE DRAWINGS

[0027] Figure 1 Shown is a schematic diagram of a power amplifier of the present invention.

[0028] Figure 2 Shown is a schematic structural diagram of the power amplifier of the present invention.

[0029] Figure 3 Shown is a schematic structural diagram of a radar system of the present invention.

[0030] Component number description

[0031] 1 Radar system

[0032] 11 Power Amplifier

[0033] 111 GaAs amplifier module

[0034] 112 GaN amplifier module

[0035] 113 Power Management Module

[0036] 1131 First power supply unit

[0037] 1132 Second power supply unit

[0038] 1133 Third power supply unit

[0039] 1134 Timing Control Unit

[0040] 1135 Sampling Unit

[0041] 114 Digital signal control module

[0042] 12 Transmit / receive switch DETAILED DESCRIPTION

[0043] The following describes the embodiments of the present invention through specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the contents disclosed in this specification. The present invention can also be implemented or applied through other different specific embodiments, and the details in this specification can also be modified or changed in various ways based on different viewpoints and applications without departing from the spirit of the present invention.

[0044] See also Figure 1 to Figure 3 It should be noted that the illustrations provided in this embodiment are only used to illustrate the basic concept of the present invention in a schematic manner, and the drawings only show components related to the present invention rather than being drawn according to the number, shape and size of components in actual implementation. In actual implementation, the type, quantity and proportion of each component may be changed arbitrarily, and the component layout may also be more complicated.

[0045] like Figure 1 and Figure 2 As shown, this embodiment provides a power amplifier 11, including: N gallium arsenide amplifier modules 111, a gallium nitride amplifier module 112 and a power management module 113, wherein N is an integer greater than or equal to 1.

[0046] like Figure 1 and Figure 2 As shown, each GaAs amplifier module 111 is cascaded in sequence to amplify the power of the radio frequency input signal RFin step by step and output it as an inter-stage amplified signal.

[0047] Specifically, in this embodiment, each gallium arsenide amplifier module 111 is configured as an enhanced gallium arsenide amplifier, which works under a positive power supply and can be directly used for signal power amplification.

[0048] In this embodiment, the supply voltage of each GaAs amplifier module 111 is between +3.3V and +5V, which is determined according to the internal device process. Compared with the GaN amplifier module 112, the supply voltage of each GaAs amplifier module 111 is a relatively low voltage, so the power loss is relatively low, and thus there is a higher power added efficiency. At the same time, each GaAs amplifier module 111 can still provide a stable power gain to meet the overall signal power amplification requirements of the power amplifier 11.

[0049] like Figure 1 and Figure 2 As shown, the GaN amplifier module 112 receives the inter-stage amplified signal, amplifies the power of the inter-stage amplified signal and outputs it as a radio frequency output signal RFout.

[0050] Specifically, in this embodiment, the gallium nitride amplifier module 112 is configured as a depletion-type gallium nitride amplifier. A depletion-type gallium nitride amplifier is an amplifier constructed using a depletion-type gallium nitride high electron mobility transistor, which is turned on when there is no gate voltage (VGS). Therefore, in order to turn off the device, a negative voltage needs to be applied to the gate to deplete the charge carriers in the channel, thereby turning off the device. The negative voltage is relative to the selected reference ground, and when the actual voltage is lower than the reference voltage, the voltage value is negative.

[0051] In this embodiment, the GaN amplifier module 112 needs to be loaded with a gate bias voltage VG (negative voltage) as a bias, and a drain control voltage VD is loaded to adjust the power gain, so as to ensure that the GaN amplifier module 112 amplifies and outputs the signal with a higher power gain.

[0052] like Figure 1 and Figure 2 As shown, the power management module 113 is connected to each gallium arsenide amplifier module 111 and the gallium nitride amplifier module 112, and is used to provide an operating voltage for each gallium arsenide amplifier module 111 and provide a gate bias voltage VG for the gallium nitride amplifier module 112; the power management module 113 is also connected to the output end of the gallium nitride amplifier module 112, and is used to output a drain control voltage VD to adjust the power gain of the gallium nitride amplifier module 112.

[0053] Specifically, the power management module 113 includes a first power supply unit 1131, a second power supply unit 1132 and a third power supply unit 1133; the first power supply unit 1131 is used to generate various working voltages VDD (in this embodiment, the first working voltage VDD1 and the second working voltage VDD2 are output to different gallium arsenide amplifier modules respectively); the second power supply unit 1132 is used to generate a gate bias voltage VG; the third power supply unit 1133 is used to generate a drain control voltage VD.

[0054] As an example, in this embodiment, the drain control voltage is set to 20V to 40V, the third power supply unit 1133 includes an NMOS tube, the source of the NMOS tube is connected to the reference ground, the gate is used as a control terminal to receive a control signal to turn on or off the third power supply unit 1133, and the drain outputs a drain control voltage VD; when the NMOS tube is turned on, the drain control voltage VD is pulled down; when the NMOS tube is turned off, the drain control voltage VD returns to a high level. Since the basic condition for the NMOS tube to be turned on is that the voltage (VGS) between the gate (G) and the source (S) must be greater than the threshold voltage (Vth), the voltage loaded on the gate of the NMOS tube can be set according to the process to control the conduction or shutdown of the third power supply unit 1133. In this embodiment, when the digital logic signal TTL=1 (high level), VGS≥Vth+10V is controlled to ensure that the NMOS tube is turned on, which means that current can flow from the drain to the source. At this time, the output drain control voltage VD is turned on and the drain control voltage VD is 28V; when the digital logic signal TTL=0 (low level), VGS is controlled to be lower than the threshold voltage, the NMOS tube is turned off, and the output drain control voltage VD is turned off.

[0055] As an example, the power management module 113 also includes a timing control unit 1134 ; the timing control unit 1134 is respectively connected to the second power supply unit 1132 and the third power supply unit 1133 to adjust the timing of the voltage output by the second power supply unit 1132 and the third power supply unit 1133 .

[0056] In this embodiment, the power management module 113 is set to power the depletion-type gallium nitride amplifier. In order to ensure the stability and reliability of the power amplifier 11 and avoid burning due to excessive current, the bias voltage VG is ensured to continue to exist when the drain control voltage VD is supplied. In this embodiment, when the power amplifier 11 is turned on, the power management module 113 first outputs the gate bias voltage VG and then outputs the drain control voltage VD; when the power amplifier 11 is turned off, the power management module 113 first turns off the drain control voltage VD and then turns off the gate bias voltage VG.

[0057] Specifically, the power management module 113 also includes a sampling unit 1135, which is used to collect and detect the gate voltage VG' of the gallium nitride amplifier module 112, and output a shutdown signal to turn off the output of the drain control voltage VD when it is detected that the gate voltage VG' is missing or the gate voltage VG' is a positive voltage, so as to provide circuit protection for the power amplifier 11.

[0058] In this embodiment, the sampling unit 1135 is set as a sampling resistor, one end of which is connected to the gate bias voltage VG of the gallium nitride amplifier module, and the other end outputs the collected voltage value. In this embodiment, the sampling unit 1135 also includes a comparator, which compares the collected gate voltage with the previously output gate bias voltage VG to determine whether the gate bias of the actual gallium nitride amplifier module 112 is normal. If it is not normal, the output drain control voltage VD is turned off to avoid damaging the power amplifier 11 due to exceeding the overcurrent value. In another embodiment, the gate voltage can also be directly detected to determine whether the gate bias of the gallium nitride amplifier module 112 is normal. The specific structure and specific timing control of the sampling unit 1135 are not limited to this embodiment. Any setting that can realize real-time detection of the gate voltage VG' and shut down according to the detection result is within the protection scope of this embodiment.

[0059] It should be noted that the power management module 113 is also provided with a power isolation conversion unit (not shown in the figure) for isolating and converting voltages of different voltages to ensure that different voltages are output externally.

[0060] like Figure 1 and Figure 2 As shown, the power amplifier 11 further includes a digital signal control module 114 for generating a digital logic signal TTL and outputting it to the power management module 113, so that the power management module 113 turns on or off the output of the drain control voltage VD based on the digital logic signal TTL.

[0061] Specifically, the power amplifier 11 is switched between the transmitting state and the receiving state by the digital logic signal TTL. In this embodiment, the digital logic signal TTL is connected to the third power supply unit 1133 via the timing control unit, and turns on the output drain control voltage VD when it is in the transmitting state at a high level, and turns off the output drain control voltage VD when it is in the receiving state at a low level.

[0062] In this embodiment, the digital logic signal TTL is connected to the timing control unit 1134 to ensure that in the transmitting state, the second power supply unit 1132 is controlled to output the gate bias voltage VG first, and then the third power supply unit 1133 is controlled to output the drain control voltage; in the receiving state, the third power supply unit 1133 is controlled to turn off the drain control voltage first, and then the second power supply unit 1132 is controlled to turn off the gate bias voltage VG, so as to ensure that during the operation of the gallium nitride amplifier module 112, when the drain control voltage VD is supplied, the bias voltage VG continues to exist.

[0063] It should be noted that, in the present embodiment, the power management module 113, the gallium arsenide amplifier module 111 and the gallium nitride amplifier module 112 can be independently configured as chips and connected as a whole through a PCB (printed circuit board); in another embodiment, the power management module 113, the gallium arsenide amplifier module 111 and the gallium nitride amplifier module 112 are all configured in the same chip, and the specific configuration is not limited to the present embodiment.

[0064] In the present embodiment, a new power amplifier 11 is proposed, which just makes up for the technical disadvantage of only setting a single amplifier in a complementary manner. In this process, in order to avoid crosstalk between different power supplies, errors in the power-on sequence causing errors, and overcurrent damage, and considering the need to use high-speed switches in the circuit layout, a power management module is set to configure different voltages, optimize the wiring to avoid minimizing the loop area and impedance, which helps to reduce electromagnetic interference and improve efficiency. It also has the functions of negative power protection and drain modulation, which ensures the stability of the circuit under the condition of circuit gain, and at the same time ensures the advantages of circuit miniaturization, thereby realizing a power amplifier with low loss, high gain, high power added efficiency and strong stability.

[0065] like Figure 3 As shown, this embodiment provides a radar system 1, including: a transmit-receive conversion switch 12 and the above-mentioned power amplifier 11.

[0066] Specifically, the transmit / receive conversion switch 12 is used to switch the radar system 1 to a transmitting state or a receiving state.

[0067] Specifically, the power amplifier 11 is connected to the transmit / receive switch 12 , and the power amplifier 11 is turned off when the radar system 1 is in a receiving state, and is turned on when the radar system 1 is in a transmitting state.

[0068] Specifically, in this embodiment, the transceiver conversion switch 12 is connected to the digital signal control module 114 (not shown in the figure) to ensure that when the radar system 1 switches states, the third power supply unit 113 is correspondingly turned on or off. At the same time, in this embodiment, the timing control unit 1134 is coordinated to ensure the timing between the second power supply unit 1132 and the third power supply unit 1133. The specific working principle has been described in the previous text, and will not be repeated here.

[0069] It should be noted that the radar system 1 is a device that uses radio waves (electromagnetic waves) to detect and measure the position, speed and other characteristics of a target. The radar system 1 transmits high-frequency electromagnetic wave signals into space and irradiates the target object. Part of the signal will be reflected back by the target, and then the electromagnetic wave signals (echoes) reflected from the target are received (these echo signals are usually very weak and need to be amplified and processed) to extract useful information, such as the distance, speed, direction and altitude of the target.

[0070] The power amplifier 11 in the radar system 1 of this embodiment is in an operating state when the radar system 1 is in a transmitting state, and is in an off state when the radar system is in a receiving state. By intermittently performing power amplification, the overall power consumption of the system can be effectively reduced and has a higher power gain and a smaller loss.

[0071] This embodiment further provides a signal amplification method, which is implemented based on the above-mentioned power amplifier 11 and includes:

[0072] S1. Amplify the power of the radio frequency input signal RFin step by step and output it as an inter-stage amplified signal.

[0073] S2. Amplify the power of the inter-stage amplified signal and use it as the radio frequency output signal RFout.

[0074] In step S1 and step S2 , the power management module 113 is used to provide various operating voltages and a gate bias voltage VG; the power management module 113 also outputs a drain control voltage VD to adjust the gain of the gallium nitride amplifier module 112 .

[0075] Specifically, the drain control voltage VD is set to 20V to 40V, preferably 28V, to provide a higher power gain.

[0076] Specifically, when the power management module 113 further includes a timing control unit 1134, when the power amplifier 11 is turned on, the power management module 113 first outputs a gate bias voltage and then outputs a drain control voltage; when the power amplifier 11 is turned off, the power management module 113 first turns off the drain control voltage and then turns off the gate bias voltage. The specific working principle has been described in the previous text and will not be repeated here.

[0077] Specifically, when the power management module 113 further includes a sampling unit, the output drain control voltage is turned off when the gate voltage VG' is detected to be missing or the gate voltage VG' is a positive voltage. The specific working principle has been described above and will not be repeated here.

[0078] It should be noted that the signal amplification method provided in this embodiment ensures that the gallium nitride amplifier module 112 can be protected in the receiving state, the transmitting state, and the switching between the two states through timing control, ensuring that the power amplifier 1 can work normally in the receiving state and the transmitting state, so as to finally achieve the effect of high-performance, low-loss, and high-stability signal power amplification, and can be well used in the field of high-frequency signal transmission. In addition, the signal amplification method provided in this embodiment also performs real-time detection of the gallium nitride amplifier module 112 and cooperates with the power management module 113 to perform real-time power off to avoid damage to the gallium nitride amplifier module 112 and even damage to the radar system.

[0079] In summary, the present invention provides a power amplifier, a radar system and a signal amplification method, wherein the power amplifier includes: N gallium arsenide amplifier modules, gallium nitride amplifier modules and a power management module; each gallium arsenide amplifier module amplifies the power of the RF input signal step by step and outputs it as an inter-stage amplified signal; the gallium nitride amplifier module amplifies the power of the inter-stage amplified signal and outputs it as an RF output signal; the power management module is used to provide an operating voltage, a gate bias voltage and a drain control voltage. The present invention has a built-in power management module, which not only supplies power to different power amplifiers and controls the power-on sequence, but also provides negative power protection and drain modulation functions for the gallium nitride power amplifier, thereby ensuring the realization of a power amplifier with low loss, high gain, high power added efficiency and strong stability. Therefore, the present invention effectively overcomes the various shortcomings of the prior art and has a high industrial utilization value.

[0080] The above embodiments are merely illustrative of the principles and effects of the present invention, and are not intended to limit the present invention. Anyone familiar with the art may modify or alter the above embodiments without departing from the spirit and scope of the present invention. Therefore, all equivalent modifications or alterations made by a person of ordinary skill in the art without departing from the spirit and technical concept disclosed by the present invention shall still be covered by the claims of the present invention.

Claims

1. A power amplifier, characterized in that: The power amplifier comprises at least: N gallium arsenide amplifier modules, gallium nitride amplifier modules and a power management module, wherein N is an integer greater than or equal to 1; The gallium arsenide amplification modules are cascaded in sequence to amplify the power of the radio frequency input signal step by step and output it as an inter-stage amplified signal; The gallium nitride amplification module receives the inter-stage amplified signal, amplifies the power of the inter-stage amplified signal and outputs it as a radio frequency output signal; The power management module is connected to each of the gallium arsenide amplifier modules and the gallium nitride amplifier module, and is used to provide a working voltage for each of the gallium arsenide amplifier modules and a gate bias voltage for the gallium nitride amplifier module; The power management module is also connected to the output end of the gallium nitride amplifier module, and is used to output a drain control voltage to adjust the power gain of the gallium nitride amplifier module.

2. The power amplifier according to claim 1, characterized in that: The power management module includes a first power supply unit, a second power supply unit and a third power supply unit; the first power supply unit is used to generate each of the working voltages; the second power supply unit is used to generate the gate bias voltage; and the third power supply unit is used to generate the drain control voltage.

3. The power amplifier according to claim 2, characterized in that: The power management module also includes a timing control unit; the timing control unit is connected to the second power supply unit and the third power supply unit respectively to adjust the sequence of voltages output by the second power supply unit and the third power supply unit.

4. The power amplifier according to claim 2 or 3, characterized in that: The power amplifier further includes a digital signal control module for generating a digital logic signal and outputting the digital logic signal to the power management module, so that the power management module turns on or off the output of the drain control voltage based on the digital logic signal.

5. The power amplifier according to claim 4, characterized in that: The power management module also includes a sampling unit for collecting and detecting the gate voltage of the gallium nitride amplifier module, and outputting a shutdown signal when it is detected that the gate voltage is missing or the gate voltage is a positive voltage, so as to shut down the output of the drain control voltage.

6. The power amplifier according to claim 1, characterized in that: The gallium nitride amplifier module is configured as a depletion-type gallium nitride amplifier.

7. A radar system, characterized in that: The radar system comprises a transmit-receive conversion switch and a power amplifier as claimed in any one of claims 1 to 6; The transmit / receive conversion switch is used to switch the radar system between a transmitting state and a receiving state; The power amplifier is connected to the transmit-receive conversion switch and is turned off when the radar system is in a receiving state, and is turned on when the radar system is in a transmitting state.

8. A signal amplification method implemented by the power amplifier according to any one of claims 1 to 6, characterized in that: The signal amplification method comprises: Amplify the power of the RF input signal step by step and output it as an inter-stage amplified signal; amplifying the power of the inter-stage amplified signal and outputting it as a radio frequency output signal; The power management module is used to provide various operating voltages and a gate bias voltage; the power management module also outputs a drain control voltage to adjust the gain of the gallium nitride amplifier module.

9. The signal amplification method according to claim 8, characterized in that: When the power management module includes a timing control unit, When the power amplifier is turned on, the power management module first outputs the gate bias voltage and then outputs the drain control voltage; When the power amplifier is turned off, the power management module first turns off the drain control voltage and then turns off the gate bias voltage.

10. The signal amplification method according to claim 8, characterized in that: When the power management module further includes a sampling unit, When it is detected that the gate voltage is missing or the gate voltage is a positive voltage, the output of the drain control voltage is turned off.

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