Semiconductor device

Abstract

Provided is a semiconductor device capable of improving characteristics. According to one embodiment, a semiconductor device includes a first electrode, a second electrode, a third electrode, a first semiconductor member, a second semiconductor member, a first compound member, and a first insulating member. The first semiconductor component contains Alx1Ga1-x1N (0 < = x1 < 1). The second semiconductor component contains Alx2Ga1-x2N (0 < x2 < = 1, and x1 < x2). The first compound member contains Alz1Ga1-z1N (0 < z1 < = 1, and x2 < z1). The third region of the first compound member includes a crystal. At least a portion of the first insulating portion of the first insulating member and at least a portion of the second insulating portion of the first insulating member are amorphous.

Description

[0001] This application is based on Japanese Patent Application No. 2023-133660 (filing date: August 18, 2023) and claims the priority of the aforementioned application, and the present application incorporates all the contents of the aforementioned application by reference. Technical Field

[0002] Embodiments of the present invention relate to a semiconductor device. Background Art

[0003] For example, in semiconductor devices such as transistors, improvement in characteristics is desired. Summary of the invention

[0004] Embodiments of the present invention provide a semiconductor device capable of improving characteristics.

[0005] According to an embodiment of the present invention, a semiconductor device includes a first electrode, a second electrode, a third electrode, a first semiconductor component, a second semiconductor component, a first compound component, and a first insulating component. The third electrode includes a first electrode portion. The position of the third electrode in a first direction from the first electrode to the second electrode is between the position of the first electrode in the first direction and the position of the second electrode in the first direction. The first semiconductor component includes Al x1 Ga 1-x1 N, where 0≤x1<1. The first semiconductor component includes a first partial region, a second partial region, a third partial region, a fourth partial region, a fifth partial region, a sixth partial region, and a seventh partial region. The direction from the first partial region to the first electrode is along a second direction intersecting the first direction. The direction from the second partial region to the second electrode is along the second direction. The direction from the third partial region to the first electrode portion is along the second direction. The position of the fourth partial region in the first direction is between the position of the first partial region in the first direction and the position of the third partial region in the first direction. The position of the fifth partial region in the first direction is between the position of the third partial region in the first direction and the position of the second partial region in the first direction. The position of the sixth partial region in the first direction is between the position of the fourth partial region in the first direction and the position of the third partial region in the first direction. The position of the seventh partial region in the first direction is located between the position of the third partial region in the first direction and the position of the fifth partial region in the first direction. The second semiconductor component includes Al x2 Ga 1-x2N, wherein 0<x2≤1, x1<x2. The second semiconductor component includes a first semiconductor portion and a second semiconductor portion. The direction from the fourth partial region to the first semiconductor portion is along the second direction. The direction from the fifth partial region to the second semiconductor portion is along the second direction. The first compound component includes Al z1 Ga 1-z1 N, wherein 0<z1≤1, x2<z1. The first compound component includes a first region, a second region, a third region, a fourth region, and a fifth region. The first region is located between the fourth partial region and the first electrode portion in the first direction. The second region is located between the first electrode portion and the fifth partial region in the first direction. The third region is located between the third partial region and the first electrode portion in the second direction. The fourth region is located between the first region and the third region. The fifth region is located between the third region and the second region. The third region includes a crystal. The first insulating component includes a first insulating portion and a second insulating portion. The first insulating portion is located between the fourth partial region and the third region in the first direction. The first insulating portion is located between the sixth partial region and the fourth region in the second direction. The second insulating portion is located between the third region and the fifth partial region in the first direction. The second insulating portion is located between the seventh partial region and the fifth region in the second direction. At least a portion of the first insulating portion and at least a portion of the second insulating portion are amorphous.

[0006] According to the semiconductor device having the above structure, it is possible to provide a semiconductor device having improved characteristics. BRIEF DESCRIPTION OF THE DRAWINGS

[0007] Figure 1 This is a schematic cross-sectional view illustrating the semiconductor device according to the first embodiment.

[0008] Figure 2 This is a schematic cross-sectional view illustrating the semiconductor device according to the first embodiment.

[0009] (Explanation of Reference Numerals)

[0010] 10, 20: 1st and 2nd semiconductor components; 10B: nitride component; 10C: carrier region; 10S: substrate; 11-17: 1st to 6th part regions; 14a-14c: 1st to 3rd parts; 15d-15f: 4th to 6th parts; 21, 22: 1st and 2nd semiconductor parts; 31: 1st compound component; 31a-31e: 1st to 5th regions; 41, 42: 1st and 2nd insulating components; 41a-41d: 1st to 4th insulating parts; 4 2a-42e: 1st to 5th insulating regions; 51-53: 1st to 3rd electrodes; 53F: 1st electrode region; 53M: 2nd electrode region; 53a, 53b: 1st and 2nd electrode parts; 110: semiconductor device; D1-D3: 1st to 3rd directions; L31a, L31b: 1st and 2nd region lengths; t41a, t41b: 1st and 2nd insulating part thicknesses; w31c: 3rd region length; w41a, w41b: 1st and 2nd insulating part lengths. DETAILED DESCRIPTION

[0011] Hereinafter, embodiments of the present invention will be described with reference to the drawings.

[0012] The drawings are schematic or conceptual drawings, and the relationship between the thickness and width of each part, the ratio of the size between parts, etc. are not necessarily the same as in reality. Even if the same part is shown, the mutual size and ratio may be shown differently depending on the drawings.

[0013] In the present specification and each drawing, the same reference numerals are attached to the same elements as those described with respect to the already mentioned drawings, and the detailed description is appropriately omitted.

[0014] (First embodiment)

[0015] Figure 1 This is a schematic cross-sectional view illustrating the semiconductor device according to the first embodiment.

[0016] like Figure 1 As shown, the semiconductor device 110 of the embodiment includes a first electrode 51, a second electrode 52, a third electrode 53, a first semiconductor component 10, a second semiconductor component 20, a first compound component 31, and a first insulating component 41. In this example, the semiconductor device 110 includes a substrate 10S and a nitride component 10B.

[0017] A first direction D1 from the first electrode 51 to the second electrode 52 is defined as an X-axis direction. A direction perpendicular to the X-axis direction is defined as a Z-axis direction. A direction perpendicular to the X-axis direction and the Z-axis direction is defined as a Y-axis direction.

[0018] The third electrode 53 includes a first electrode portion 53 a. The position of the third electrode 53 in the first direction D1 is located between the position of the first electrode 51 in the first direction D1 and the position of the second electrode 52 in the first direction D1.

[0019] The first semiconductor component 10 includes Al x1 Ga 1-x1 N (0≤x1<1). The composition ratio x1 may be, for example, 0 or more and 0.13 or less. The first semiconductor component 10 may be, for example, GaN. The first semiconductor component 10 may not contain an impurity imparting conductivity.

[0020] The first semiconductor component 10 includes a first partial region 11, a second partial region 12, a third partial region 13, a fourth partial region 14, a fifth partial region 15, a sixth partial region 16, and a seventh partial region 17. The direction from the first partial region 11 to the first electrode 51 is along a second direction D2 intersecting the first direction D1. The second direction D2 may be the Z-axis direction.

[0021] The direction from the second partial region 12 to the second electrode 52 is along the second direction D2. The direction from the third partial region 13 to the first electrode portion 53a is along the second direction D2. The position of the fourth partial region 14 in the first direction D1 is located between the position of the first partial region 11 in the first direction D1 and the position of the third partial region 13 in the first direction D1. The position of the fifth partial region 15 in the first direction D1 is located between the position of the third partial region 13 in the first direction D1 and the position of the second partial region 12 in the first direction D1. The position of the sixth partial region 16 in the first direction D1 is located between the position of the fourth partial region 14 in the first direction D1 and the position of the third partial region 13 in the first direction D1. The position of the seventh partial region 17 in the first direction D1 is located between the position of the third partial region 13 in the first direction D1 and the position of the fifth partial region 15 in the first direction D1.

[0022] The second semiconductor component 20 includes Al x2 Ga 1-x2 N(0<x2≤1, x1<x2). The composition ratio x2 may be, for example, 0.15 or more and 0.35 or less. The second semiconductor component 20 is AlGaN. The second semiconductor component 20 may not contain impurities imparting conductivity.

[0023] The second semiconductor component 20 includes a first semiconductor portion 21 and a second semiconductor portion 22. The direction from the fourth partial region 14 to the first semiconductor portion 21 is along the second direction D2. The direction from the fifth partial region 15 to the second semiconductor portion 22 is along the second direction D2.

[0024] The first compound member 31 includes Alz1Ga1-z1N (0<z1≤1, x2<z1). The composition ratio z1 may be 0.9 or more and 1 or less. The first compound member 31 may be, for example, AlGaN or AlN.

[0025] The first compound component 31 includes a first region 31a, a second region 31b, a third region 31c, a fourth region 31d, and a fifth region 31e. The first region 31a is located between the fourth partial region 14 and the first electrode portion 53a in the first direction D1. The second region 31b is located between the first electrode portion 53a and the fifth partial region 15 in the first direction D1. The third region 31c is located between the third partial region 13 and the first electrode portion 53a in the second direction D2. The fourth region 31d is located between the first region 31a and the third region 31c. The fifth region 31e is located between the third region 31c and the second region 31b. The third region 31c includes a crystal. At least a portion of the third region 31c includes a crystal. The third region 31c has, for example, polarization.

[0026] The first insulating member 41 includes a first insulating portion 41a and a second insulating portion 41b. The first insulating portion 41a is located between the fourth partial region 14 and the third region 31c in the first direction D1. The first insulating portion 41a is located between the sixth partial region 16 and the fourth region 31d in the second direction D2. The second insulating portion 41b is located between the third region 31c and the fifth partial region 15 in the first direction D1. The second insulating portion 41b is located between the seventh partial region 17 and the fifth region 31e in the second direction D2.

[0027] At least a portion of the first insulating portion 41 a and at least a portion of the second insulating portion 41 b are amorphous. These portions do not have polarization, for example.

[0028] The current flowing between the first electrode 51 and the second electrode 52 can be controlled by the potential of the third electrode 53. The potential of the third electrode 53 may be, for example, a potential based on the potential of the first electrode 51. The first electrode 51 functions as, for example, a source electrode. The second electrode 52 functions as, for example, a drain electrode. The third electrode 53 functions as, for example, a gate electrode. The semiconductor device 110 is, for example, a transistor.

[0029] The first semiconductor component 10 includes a portion facing the second semiconductor component 20. A carrier region 10C is formed in this portion. The carrier region 10C is, for example, a two-dimensional electron gas. The semiconductor device 110 is, for example, a HEMT (High Electron Mobility Transistor).

[0030] In the embodiment, the third region 31c is provided. For example, the third partial region 13 includes a portion facing the third region 31c. The carrier region 10C is formed in this portion. In the third region 31c, the Al composition ratio z1 is high. A high carrier density is obtained. For example, a low on-resistance is obtained.

[0031] In the embodiment, the first insulating portion 41a and the second insulating portion 41b are provided. In the sixth partial region 16 and the seventh partial region 17 corresponding to these regions, the carrier density is low. Or no carriers are generated. For example, a high threshold voltage is stably obtained. For example, a normally off operation is obtained. According to the embodiment, a high threshold voltage is stably obtained. According to the embodiment, a semiconductor device capable of improving characteristics can be provided.

[0032] According to the voltage applied to the third electrode 53 , carriers can flow in the sixth partial region 16 and the seventh partial region 17 .

[0033] In the semiconductor device 110, two amorphous insulating portions (the first insulating portion 41a and the second insulating portion 41b) are provided. Thus, the carrier region 10C is cut off at two locations, and the threshold voltage can be controlled more stably.

[0034] For example, the first region 31a and the second region 31b include crystals, so that low on-resistance can be easily obtained.

[0035] At least a portion of the fourth region 31d and at least a portion of the fifth region 31e may be amorphous. For example, it is easy to relax the strain of the crystal. For example, in the third region 31c, the first region 31a, and the second region 31b, high crystallinity is easy to obtain.

[0036] The distance (first distance) between the first electrode 51 and the third electrode 53 is shorter than the distance (second distance) between the third electrode 53 and the second electrode 52. Stable operation is easily obtained. The first electrode 51, the second electrode 52, and the third electrode 53 may extend, for example, along the third direction D3. The third direction D3 intersects a plane including the first direction D1 and the second direction D2. The third direction D3 may be, for example, the Y-axis direction.

[0037] In the embodiment, the first electrode portion 53a is located between the fourth partial region 14 and the fifth partial region 15 in the first direction D1. The third electrode 53 is, for example, a recessed gate electrode. A high threshold voltage can be stably obtained.

[0038] like Figure 1As shown, the third electrode 53 may include a second electrode portion 53b. The second electrode portion 53b is connected to the first electrode portion 53a. A portion of the second electrode portion 53b overlaps with the fourth partial region 14 in the second direction D2. Another portion of the second electrode portion 53b overlaps with the fifth partial region 15 in the second direction D2.

[0039] like Figure 1 As shown, the third electrode 53 includes a first electrode region 53F and a second electrode region 53M. At least a portion of the first electrode region 53F is located between the first semiconductor component 10 and the second electrode region 53M and between the second semiconductor component 20 and the second electrode region 53M. The first electrode region 53F includes, for example, nitrogen and a metal element. In one example, the first electrode region 53F includes TiN. The first electrode region 53F is, for example, an intermediate layer. The second electrode region 53M includes, for example, a metal. In one example, the second electrode region 53M includes, for example, aluminum.

[0040] The semiconductor device 110 may further include a second insulating component 42. The second insulating component 42 includes a first insulating region 42a, a second insulating region 42b, and a third insulating region 42c. The first insulating region 42a is located between the first region 31a and the first electrode portion 53a in the first direction D1. The second insulating region 42b is located between the first electrode portion 53a and the second region 31b in the first direction D1. The third insulating region 42c is provided between the third region 31c and the first electrode portion 53a, between the fourth region 31d and the first electrode portion 53a, and between the fifth region 31e and the first electrode portion 53a. By providing the second insulating component 42, high insulation is obtained. Stable operation is obtained.

[0041] For example, the second insulating member 42 includes silicon and oxygen. The first insulating member 41 includes silicon and nitrogen. The first insulating member 41 does not include oxygen. Alternatively, the concentration of oxygen in the first insulating member 41 is lower than the concentration of oxygen in the second insulating member 42. The first insulating member 41 includes, for example, SiN. The second insulating member 42 includes silicon oxide. The first insulating member 41 includes, for example, SiO2.

[0042] like Figure 1 As shown, the first insulating member 41 may further include a third insulating portion 41c and a fourth insulating portion 41d. The first semiconductor portion 21 is located between the fourth partial region 14 and the third insulating portion 41c in the second direction D2. The second semiconductor portion 22 is located between the fifth partial region 15 and the fourth insulating portion 41d in the second direction D2.

[0043] like Figure 1As shown, the second insulating member 42 may further include a fourth insulating region 42d and a fifth insulating region 42e. The third insulating portion 41c is located between the first semiconductor portion 21 and the fourth insulating region 42d in the second direction D2. The fourth insulating portion 41d is located between the second semiconductor portion 22 and the fifth insulating region 42e in the second direction D2.

[0044] For example, the third region 31c is in contact with the third partial region 13. The first insulating portion 41a is in contact with the sixth partial region 16. The second insulating portion 41b is in contact with the seventh partial region 17. The first insulating portion 41a is in contact with the fourth partial region 14. The second insulating portion 41b is in contact with the fifth partial region 15.

[0045] In the semiconductor device 110, the first semiconductor component 10 is provided between the substrate 10S and the second semiconductor component 20. The nitride component 10B is provided between the substrate 10S and the first semiconductor component 10. The substrate 10S may be, for example, a silicon substrate. The nitride component 10B includes, for example, a nitride semiconductor. The nitride component 10B may include, for example, Al, Ga, and nitrogen. The nitride component 10B is, for example, a buffer layer.

[0046] Figure 2 This is a schematic cross-sectional view illustrating the semiconductor device according to the first embodiment.

[0047] like Figure 2 As shown, the length of the first insulating portion 41a along the first direction D1 is set as the first insulating portion length w41a. The length of the first insulating portion 41a along the second direction D2 is set as the first insulating portion thickness t41a. The length of the second insulating portion 41b along the first direction D1 is set as the second insulating portion length w41b. The length of the second insulating portion 41b along the second direction D2 is set as the second insulating portion thickness t41b.

[0048] In the embodiment, the first ratio of the first insulating portion length w41a to the first insulating portion thickness t41a is preferably greater than 0.5 and less than 1.5. The second ratio of the second insulating portion length w41b to the second insulating portion thickness t41b is preferably greater than 0.5 and less than 1.5. In the corner including the first insulating portion 41a or the second insulating portion 41b, the electric field is effectively controlled. For example, at the end of the bottom of the groove, the electric field distribution tends to become uniform.

[0049] The sum of the first insulating portion length w41a and the first insulating portion thickness t41a is set as the first sum. The sum of the second insulating portion length w41b and the second insulating portion thickness t41b is set as the second sum. In an embodiment, the first sum may be different from the second sum. For example, the first sum may be shorter than the second sum. Thus, for example, the on-resistance can be reduced on the first electrode 51 (source electrode) side.

[0050] In one example, the first insulating portion length w41a is greater than or equal to 5 nm and less than or equal to 200 nm, and the second insulating portion length w41b is greater than or equal to 5 nm and less than or equal to 200 nm.

[0051] The length of the third region 31c along the first direction D1 is set to the third region length w31c. For example, the third region length w31c may be longer than the first insulating portion length w41a. The third region length w31c may be longer than the second insulating portion length w41b. For example, the ratio of the first insulating portion length w41a to the third region length w31c may be greater than 0.01 and less than 0.5. For example, the ratio of the first insulating portion length w41a to the third region length w31c may be less than 0.3. The ratio of the second insulating portion length w41b to the third region length w31c may be greater than 0.01 and less than 0.5. The ratio of the second insulating portion length w41b to the third region length w31c may be less than 0.3.

[0052] The first insulating portion thickness t41a may be, for example, not less than 5 nm and not more than 700 nm. The second insulating portion thickness t41b may be, for example, not less than 5 nm and not more than 700 nm.

[0053] like Figure 2 As shown, the length of the first region 31a along the second direction D2 is set to the first region length L31a. The first region length L31a can be, for example, 150 nm or more. The first region length L31a can be, for example, 500 nm or less. The length of the second region 31b along the second direction D2 is set to the second region length L31b. The second region length L31b is, for example, 150 nm or more. The second region length L31b can be, for example, 500 nm or less. For example, it is easy to stably obtain a high threshold voltage.

[0054] like Figure 1As shown, the fourth partial region 14 includes the first portion 14a connected to the first region 31a and the second portion 14b connected to the first insulating portion 41a. The first crystallinity of the first portion 14a can be higher than the second crystallinity of the second portion 14b. The fourth partial region 14 also includes the third portion 14c connected to the fourth region 31d. For example, the third crystallinity of the third portion 14c can be lower than the first crystallinity. It is easy to relax the strain of the crystal. For example, in the first portion 14a and the first region 31a, it is easy to obtain high crystallinity. It is easy to obtain low on-resistance.

[0055] like Figure 1 As shown, the fifth partial region 15 includes a fourth portion 15d connected to the second region 31b and a fifth portion 15e connected to the second insulating portion 41b. The fourth crystallinity of the fourth portion 15d can be higher than the fifth crystallinity of the fifth portion 15e. The fifth partial region 15 further includes a sixth portion 15f connected to the fifth region 31e. For example, the sixth crystallinity of the sixth portion 15f can be lower than the fourth crystallinity. It is easy to relax the strain of the crystal. For example, in the fourth portion 15d and the second region 31b, it is easy to obtain high crystallinity. It is easy to obtain low on-resistance.

[0056] In the embodiment, when the gate is turned off, the resistance is high, and the threshold voltage rise effect caused by the potential drop is large. When turned on, the resistance is reduced at both end portions of the bottom of the groove. When turned off, a high threshold is obtained, and when turned on, a low on-resistance is obtained.

[0057] For example, the above-mentioned structure related to the semiconductor device 110 can be formed by the following process. A trench is formed in a structure including the first semiconductor component 10 and the second semiconductor component 20. An insulating film is formed inside the trench. A first insulating portion 41a is obtained from a portion of the insulating film. A second insulating portion 41b is obtained from another portion of the insulating film. Thereafter, the first compound component 31 and the second insulating component 42 are formed. The first electrode portion 53a of the third electrode 53 is formed in the remaining space of the trench.

[0058] In the embodiment, information on the length and thickness is obtained by electron microscope observation, etc. Information on the composition of the material is obtained by SIMS (Secondary Ion Mass Spectrometry) or EDX (Energy dispersive X-ray spectroscopy), etc.

[0059] The implementation method may include the following technical solutions.

[0060] (Technical Solution 1)

[0061] A semiconductor device comprising:

[0062] 1st electrode;

[0063] The second electrode;

[0064] a third electrode including the first electrode portion, wherein a position of the third electrode in a first direction from the first electrode to the second electrode is located between a position of the first electrode in the first direction and a position of the second electrode in the first direction;

[0065] The first semiconductor component includes Al x1 Ga 1-x1 N, wherein 0≤x1<1, the first semiconductor component comprises a first partial region, a second partial region, a third partial region, a fourth partial region, a fifth partial region, a sixth partial region and a seventh partial region, a direction from the first partial region to the first electrode is along a second direction intersecting the first direction, a direction from the second partial region to the second electrode is along the second direction, a direction from the third partial region to the first electrode portion is along the second direction, and a position of the fourth partial region in the first direction is located between a position of the first partial region in the first direction and a position of the third partial region The position of the fifth partial region in the first direction is between the position of the third partial region in the first direction and the position of the second partial region in the first direction, the position of the sixth partial region in the first direction is between the position of the fourth partial region in the first direction and the position of the third partial region in the first direction, and the position of the seventh partial region in the first direction is between the position of the third partial region in the first direction and the position of the fifth partial region in the first direction;

[0066] The second semiconductor component includes Al x2 Ga 1-x2 N, wherein 0<x2≤1, x1<x2, the second semiconductor component comprises a first semiconductor portion and a second semiconductor portion, a direction from the fourth partial region to the first semiconductor portion is along the second direction, and a direction from the fifth partial region to the second semiconductor portion is along the second direction;

[0067] The first compound component contains Al z1 Ga 1-z1N, wherein 0<z1≤1, x2<z1, the first compound component comprises a first region, a second region, a third region, a fourth region and a fifth region, the first region is located between the fourth partial region and the first electrode portion in the first direction, the second region is located between the first electrode portion and the fifth partial region in the first direction, the third region is located between the third partial region and the first electrode portion in the second direction, the fourth region is located between the first region and the third region, the fifth region is located between the third region and the second region, and the third region comprises a crystal; and

[0068] A first insulating component, the first insulating component includes a first insulating portion and a second insulating portion, the first insulating portion is located between the fourth partial region and the third region in the first direction, the first insulating portion is located between the sixth partial region and the fourth region in the second direction, the second insulating portion is located between the third region and the fifth partial region in the first direction, the second insulating portion is located between the seventh partial region and the fifth region in the second direction, at least a portion of the first insulating portion and at least a portion of the second insulating portion are amorphous.

[0069] (Technical Solution 2)

[0070] The semiconductor device according to claim 1, wherein the first region and the second region include crystals.

[0071] (Technical Solution 3)

[0072] The semiconductor device according to claim 2, wherein at least a portion of the fourth region and at least a portion of the fifth region are amorphous.

[0073] (Technical Solution 4)

[0074] The semiconductor device according to any one of claims 1 to 3, further comprising a second insulating member.

[0075] The second insulating member includes a first insulating region, a second insulating region, and a third insulating region.

[0076] The first insulating region is located between the first region and the first electrode portion in the first direction,

[0077] The second insulating region is located between the first electrode portion and the second region in the first direction,

[0078] The third insulating region is provided between the third region and the first electrode portion, between the fourth region and the first electrode portion, and between the fifth region and the first electrode portion.

[0079] (Technical Solution 5)

[0080] The semiconductor device according to claim 4, wherein the second insulating member includes silicon and oxygen.

[0081] The first insulating member includes silicon and nitrogen.

[0082] The first insulating member does not contain oxygen, or a concentration of oxygen in the first insulating member is lower than a concentration of oxygen in the second insulating member.

[0083] (Technical Solution 6)

[0084] The semiconductor device according to claim 4 or 5, wherein the first insulating member further includes a third insulating portion and a fourth insulating portion.

[0085] The first semiconductor portion is located between the fourth partial region and the third insulating portion in the second direction,

[0086] The second semiconductor portion is located between the fifth partial region and the fourth insulating portion in the second direction.

[0087] (Technical Solution 7)

[0088] According to the semiconductor device of claim 6, the second insulating member further includes a fourth insulating region and a fifth insulating region.

[0089] The third insulating portion is located between the first semiconductor portion and the fourth insulating region in the second direction.

[0090] The fourth insulating portion is located between the second semiconductor portion and the fifth insulating region in the second direction.

[0091] (Technical Solution 8)

[0092] The semiconductor device according to any one of technical solutions 1 to 7, wherein a first region length of the first region along the second direction is greater than or equal to 150 nm,

[0093] A second region length of the second region along the second direction is greater than or equal to 150 nm.

[0094] (Technical Solution 9)

[0095] The semiconductor device according to any one of technical solutions 1 to 8, wherein a first distance between the first electrode and the third electrode is shorter than a second distance between the third electrode and the second electrode,

[0096] The first sum is shorter than the second sum,

[0097] The first sum is the sum of the first insulating portion length of the first insulating portion along the first direction and the first insulating portion thickness of the first insulating portion along the second direction,

[0098] The second sum is a sum of a second insulating portion length of the second insulating portion along the first direction and a second insulating portion thickness of the second insulating portion along the second direction.

[0099] (Technical Solution 10)

[0100] The semiconductor device according to any one of technical solutions 1 to 8, wherein a first ratio of a first insulating portion length of the first insulating portion along the first direction to a first insulating portion thickness of the first insulating portion along the second direction is greater than or equal to 0.5 and less than or equal to 1.5,

[0101] A second ratio of a second insulating portion length of the second insulating portion along the first direction to a second insulating portion thickness of the second insulating portion along the second direction is greater than or equal to 0.5 and less than or equal to 1.5.

[0102] (Technical Solution 11)

[0103] The semiconductor device according to any one of technical solutions 1 to 8, wherein a length of the first insulating portion along the first direction is greater than or equal to 5 nm and less than or equal to 200 nm,

[0104] A second insulating portion length along the first direction of the second insulating portion is greater than or equal to 5 nm and less than or equal to 200 nm.

[0105] (Technical Solution 12)

[0106] The semiconductor device according to any one of technical solutions 1 to 8, wherein a ratio of a length of the first insulating portion of the first insulating portion along the first direction to a length of the third region of the third region along the first direction is greater than or equal to 0.01 and less than 0.5,

[0107] A ratio of a second insulating portion length of the second insulating portion along the first direction to a length of the third region is greater than or equal to 0.01 and less than 0.5.

[0108] (Technical Solution 13)

[0109] The semiconductor device according to any one of technical solutions 1 to 8, wherein a thickness of the first insulating portion along the second direction is greater than or equal to 5 nm and less than or equal to 700 nm,

[0110] The second insulating portion has a thickness of 5 nm to 700 nm along the second direction.

[0111] (Technical Solution 14)

[0112] The semiconductor device according to any one of technical solutions 1 to 13, wherein the first electrode portion is located between the fourth partial region and the fifth partial region in the first direction.

[0113] (Technical Solution 15)

[0114] The semiconductor device according to any one of technical solutions 1 to 14, wherein the third region is in contact with the third partial region,

[0115] The first insulating portion is connected to the sixth portion region,

[0116] The second insulating portion is in contact with the seventh partial region.

[0117] (Technical Solution 16)

[0118] The semiconductor device according to any one of technical solutions 1 to 15, wherein the fourth partial area includes:

[0119] a first portion connected to the first region; and

[0120] a second portion connected to the first insulating portion,

[0121] The first crystallinity of the first portion is higher than the second crystallinity of the second portion.

[0122] (Technical Solution 17)

[0123] The semiconductor device according to claim 16, wherein the fourth partial region further includes a third portion connected to the fourth region,

[0124] The third portion has a third crystallinity lower than the first crystallinity.

[0125] (Technical Solution 18)

[0126] The semiconductor device according to any one of technical solutions 1 to 17, wherein the fifth part area includes:

[0127] a fourth portion connected to the second region; and

[0128] a fifth portion connected to the second insulating portion,

[0129] The fourth crystallinity of the fourth portion is higher than the fifth crystallinity of the fifth portion.

[0130] (Technical Solution 19)

[0131] The semiconductor device according to claim 18, wherein the fifth partial region further includes a sixth portion connected to the fifth region,

[0132] The sixth crystallinity of the sixth portion is lower than the fourth crystallinity.

[0133] (Technical Solution 20)

[0134] A semiconductor device according to any one of technical solutions 1 to 19, wherein z1 is greater than or equal to 0.9 and less than or equal to 1.

[0135] According to the embodiment, a semiconductor device having improved characteristics can be provided.

[0136] In the embodiment, the "nitride semiconductor" is included in the chemical formula B x In y Al z Ga 1-x-y-z Semiconductors of all compositions in which the composition ratios x, y, and z are changed within respective ranges in N (0≤x≤1, 0≤y≤1, 0≤z≤1, x+y+z≤1). In the above chemical formula, semiconductors of Group V elements other than N (nitrogen), semiconductors of various elements added to control various physical properties such as conductivity type, and semiconductors unexpectedly contained in various elements are also included in the "nitride semiconductor".

[0137] The embodiments of the present invention are described above with reference to specific examples. However, the present invention is not limited to these specific examples. For example, as long as a person skilled in the art can implement the present invention in the same manner by appropriately selecting from the known range, the specific configuration of each element such as a semiconductor component, an electrode, and an insulating component contained in a semiconductor device is included in the scope of the present invention as long as the same effect can be obtained.

[0138] Furthermore, any combination of two or more elements of each specific example within a technically feasible range is also included in the scope of the present invention as long as it includes the gist of the present invention.

[0139] In addition, based on the semiconductor device described above as an embodiment of the present invention, all semiconductor devices that can be implemented by a person skilled in the art by appropriately changing the design also belong to the scope of the present invention as long as they include the gist of the present invention.

[0140] In addition, it is considered that those skilled in the art can conceive of various changes and modifications within the scope of the concept of the present invention, and these changes and modifications also belong to the scope of the present invention.

[0141] Although several embodiments of the present invention have been described, these embodiments are presented as examples and are not intended to limit the scope of the invention. These new embodiments can be implemented in various other ways, and various omissions, substitutions, and changes can be made without departing from the scope of the subject matter of the invention. These embodiments and their variations are included in the scope and subject matter of the invention, and are included in the invention described in the claims and their equivalents.

Claims

1. A semiconductor device comprising: 1st electrode; The second electrode; a third electrode including the first electrode portion, wherein a position of the third electrode in a first direction from the first electrode to the second electrode is located between a position of the first electrode in the first direction and a position of the second electrode in the first direction; The first semiconductor component includes Al x1 Ga 1-x1 N, wherein 0≤x1<1, the first semiconductor component comprises a first partial region, a second partial region, a third partial region, a fourth partial region, a fifth partial region, a sixth partial region and a seventh partial region, a direction from the first partial region to the first electrode is along a second direction intersecting the first direction, a direction from the second partial region to the second electrode is along the second direction, a direction from the third partial region to the first electrode portion is along the second direction, and a position of the fourth partial region in the first direction is located between a position of the first partial region in the first direction and a position of the third partial region The position of the fifth partial region in the first direction is between the position of the third partial region in the first direction and the position of the second partial region in the first direction, the position of the sixth partial region in the first direction is between the position of the fourth partial region in the first direction and the position of the third partial region in the first direction, and the position of the seventh partial region in the first direction is between the position of the third partial region in the first direction and the position of the fifth partial region in the first direction; The second semiconductor component includes Al x2 Ga 1-x2 N, wherein 0<x2≤1, x1<x2, the second semiconductor component comprises a first semiconductor portion and a second semiconductor portion, a direction from the fourth partial region to the first semiconductor portion is along the second direction, and a direction from the fifth partial region to the second semiconductor portion is along the second direction; The first compound component contains Al z1 Ga 1-z1 N, wherein 0<z1≤1, x2<z1, the first compound component comprises a first region, a second region, a third region, a fourth region and a fifth region, the first region is located between the fourth partial region and the first electrode portion in the first direction, the second region is located between the first electrode portion and the fifth partial region in the first direction, the third region is located between the third partial region and the first electrode portion in the second direction, the fourth region is located between the first region and the third region, the fifth region is located between the third region and the second region, and the third region comprises a crystal; and A first insulating component, the first insulating component includes a first insulating portion and a second insulating portion, the first insulating portion is located between the fourth partial region and the third region in the first direction, the first insulating portion is located between the sixth partial region and the fourth region in the second direction, the second insulating portion is located between the third region and the fifth partial region in the first direction, the second insulating portion is located between the seventh partial region and the fifth region in the second direction, at least a portion of the first insulating portion and at least a portion of the second insulating portion are amorphous.

2. The semiconductor device according to claim 1, wherein The first region and the second region include crystals.

3. The semiconductor device according to claim 2, wherein: At least a portion of the fourth region and at least a portion of the fifth region are amorphous.

4. The semiconductor device according to claim 1, wherein further comprising a second insulating member, The second insulating member includes a first insulating region, a second insulating region, and a third insulating region. The first insulating region is located between the first region and the first electrode portion in the first direction, The second insulating region is located between the first electrode portion and the second region in the first direction, The third insulating region is provided between the third region and the first electrode portion, between the fourth region and the first electrode portion, and between the fifth region and the first electrode portion.

5. The semiconductor device according to claim 4, wherein: The second insulating member includes silicon and oxygen. The first insulating member includes silicon and nitrogen. The first insulating member does not contain oxygen, or a concentration of oxygen in the first insulating member is lower than a concentration of oxygen in the second insulating member.

6. The semiconductor device according to claim 4, wherein: The first insulating component further includes a third insulating portion and a fourth insulating portion. The first semiconductor portion is located between the fourth partial region and the third insulating portion in the second direction, The second semiconductor portion is located between the fifth partial region and the fourth insulating portion in the second direction.

7. The semiconductor device according to claim 6, wherein: The second insulating component further includes a fourth insulating region and a fifth insulating region. The third insulating portion is located between the first semiconductor portion and the fourth insulating region in the second direction. The fourth insulating portion is located between the second semiconductor portion and the fifth insulating region in the second direction.

8. The semiconductor device according to claim 1, wherein A first distance between the first electrode and the third electrode is shorter than a second distance between the third electrode and the second electrode. The first sum is shorter than the second sum, The first sum is the sum of the first insulating portion length of the first insulating portion along the first direction and the first insulating portion thickness of the first insulating portion along the second direction, The second sum is a sum of a second insulating portion length of the second insulating portion along the first direction and a second insulating portion thickness of the second insulating portion along the second direction.

9. The semiconductor device according to claim 1, wherein: The first electrode portion is located between the fourth partial region and the fifth partial region in the first direction.

10. The semiconductor device according to claim 1, wherein The Part 4 area includes: a first portion connected to the first region; and a second portion connected to the first insulating portion, The first crystallinity of the first portion is higher than the second crystallinity of the second portion.

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