Electronic device

Abstract

The invention provides an electronic device which comprises a substrate and a transistor. The transistor is arranged on the substrate and comprises an oxide semiconductor, a first conductive element and a second conductive element. The oxide semiconductor is disposed on the substrate. The first conductive element is disposed between the substrate and the oxide semiconductor. The second conductive element is disposed on the oxide semiconductor and overlaps the first conductive element. In a top view of the transistor, the second conductive element has an arc angle.

Description

Technical Field

[0001] The present invention relates to an electronic device, and in particular to an electronic device having an oxide semiconductor transistor. Background Art

[0002] The electrical properties of a transistor are one of the important factors that determine the efficiency of the transistor. In oxide semiconductor transistors, poor conductivity between the oxide semiconductor and the electrode will affect the efficiency of the crystal. Therefore, how to effectively improve the conductivity between the oxide semiconductor and the electrode, thereby improving the efficiency of the transistor and the quality of the electronic device, is a technical problem that needs to be solved. Summary of the invention

[0003] The main object of the present invention is to provide an electronic device.

[0004] The present invention provides an electronic device, which includes a substrate and a transistor. The transistor is arranged on the substrate and includes an oxide semiconductor, a first conductive element and a second conductive element. The oxide semiconductor is arranged on the substrate. The first conductive element is arranged between the substrate and the oxide semiconductor. The second conductive element is arranged on the oxide semiconductor and overlaps with the first conductive element. In a top view of the transistor, the second conductive element has an arc angle. BRIEF DESCRIPTION OF THE DRAWINGS

[0005] Figure 1 FIG. 1 is a cross-sectional diagram of an electronic device according to a first embodiment of the present invention.

[0006] Figure 2 FIG. 1 is a schematic top view of a transistor of an electronic device according to a first embodiment of the present invention.

[0007] Figure 3 for Figure 1 A local enlarged view of area Q in FIG.

[0008] Figure 4 It is a partial enlarged view of an example of a conductive element used as a gate in the first embodiment of the present invention.

[0009] Figure 5 FIG. 4 is a partial enlarged view of another example of a conductive element serving as a gate in the first embodiment of the present invention.

[0010] Figure 6 FIG. 4 is a schematic cross-sectional view of a transistor according to a second embodiment of the present invention.

[0011] Figure 7 FIG. 4 is a schematic cross-sectional view of a transistor according to a third embodiment of the present invention.

[0012] Explanation of reference numerals: 1-electronic device; 10-transistor; 100-substrate; 102, 104-buffer layer; 106-oxide semiconductor; 108, 110, 112, 114, 116, 162, 164, 166, 168-conductive element; 1081, 1101, 1161-portion; 1160, 1162, 1164, 174, 176, 178, 180-sub-conductive element; 116L, 116R, 138, 140-edge; 118, 120, 152, 154, 156, 158, 160-insulating layer; 122-functional layer ; 124, 126, 128, 182, 184-transparent conductive layer; 130-interlayer dielectric layer; 132-first zone; 134, 136-second zone; 142, 144, 150-arc angle; 146, 148, 170, 172, 186, 188-contact hole; 168B-bottom; 168M-middle; 168T-top; 190-guide angle; 192, 194-third zone; D1-D3-distance; L1, L2-length; M1, M2, M3-angle; Q-area; t1, t2-thickness; V, X, Y-direction; W1, W2-width. DETAILED DESCRIPTION

[0013] In order to enable those skilled in the art to further understand the present invention, the embodiments of the present invention are listed below, and the components of the present invention and the effects to be achieved are described in detail with the accompanying drawings. It should be noted that the drawings are simplified schematic diagrams, and therefore, only the components and combination relationships related to the present invention are shown to provide a clearer description of the basic architecture or implementation method of the present invention, and the actual components and layout may be more complex. In addition, for the convenience of explanation, the components shown in the various drawings of the present invention are not drawn in proportion to the actual number, shape, and size, and the detailed proportions can be adjusted according to the design requirements.

[0014] Certain words are used throughout the specification and claims of the present invention to refer to specific components. It should be understood by those skilled in the art that electronic equipment manufacturers may refer to the same components by different names. The present invention is not intended to distinguish between components that have the same function but different names. In the specification and claims of the present invention, the words "including" and "comprising" are open-ended words and should therefore be interpreted as "including but not limited to...".

[0015] Directional terms mentioned in the present invention, such as "up", "down", "front", "back", "left", "right", etc., are only referenced to the directions of the drawings. Therefore, the directional terms used are used to illustrate, but not to limit the present invention. In the drawings, each figure depicts the general characteristics of the methods, structures and / or materials used in a particular embodiment. However, these drawings should not be interpreted as defining or limiting the scope or nature covered by these embodiments. For example, for clarity, the relative size, thickness and position of each film layer, region and / or structure may be reduced or enlarged.

[0016] It should be understood that when an element or a film layer is referred to as being "on", "disposed on" or "connected to" another element or film layer, it may be directly on or directly connected to the other element or film layer, or there may be an intervening element or film layer between the two (non-direct situation). Conversely, when an element is referred to as being "directly on" or "directly disposed on" or "directly connected to" another element or film layer, there may be no intervening element or film layer between the two. In addition, the arrangement relationship between different elements may be explained according to the contents of the accompanying drawings.

[0017] The term "same" is generally interpreted as within 10% of a given value or range, or as within 5%, 3%, 2%, 1% or 0.5% of a given value or range.

[0018] The electrical connection or coupling described in the present invention may refer to direct connection or indirect connection. In the case of direct connection, the endpoints of the two circuit elements are directly connected or connected to each other by a conductor segment, and in the case of indirect connection, there is a switch, diode, capacitor, inductor, resistor, other suitable element, or a combination of the above elements between the endpoints of the two circuit elements, but it is not limited thereto.

[0019] Although the terms first, second, third, etc. can be used to describe a variety of components, the components are not limited to these terms. These terms are only used to distinguish a single component from other components in the specification. The same terms may not be used in the claims, but may be replaced by first, second, third, etc. according to the order in which the components are declared in the claims. Therefore, in the following description, the first component may be the second component in the claims.

[0020] It should be noted that the following embodiments may replace, reorganize, or mix the technical features in several different embodiments to complete other embodiments without departing from the spirit of the present invention.

[0021] The comparison of thickness, area, width, height, radius, etc. between different components in the following text can be made by using an optical microscope (OM), a scanning electron microscope (SEM), or other suitable instruments, and the comparison can be made using the same photo or more than one photo.

[0022] The electronic device of the present invention may include a display device, a backlight device, an antenna device, a sensing device, a wearable device, a vehicle-mounted device or a splicing device, but is not limited thereto. The electronic device may be a bendable, flexible or rollable electronic device. The display device may include a non-self-luminous display device or a self-luminous display device, but is not limited thereto. The display device may, for example, include liquid crystal, a light-emitting diode, a fluorescence material, a phosphor, a quantum dot (QD), other suitable display media or a combination of the foregoing. The antenna device may be a liquid crystal type antenna device or a non-liquid crystal type antenna device, and the sensing device may be a sensing device that senses capacitance, light, heat energy or ultrasound, but is not limited thereto.

[0023] The electronic device may include an electronic unit, and the electronic unit may include a passive component or an active component, such as a capacitor, a resistor, an inductor, a diode, etc. The diode may include a light emitting diode or a photodiode, but is not limited thereto. The light emitting diode may include, for example, an organic light emitting diode (OLED), a sub-millimeter light emitting diode (mini LED), a micro LED, or a quantum dot light emitting diode (quantum dot LED), but is not limited thereto. The splicing device may be, for example, a display splicing device or an antenna splicing device, but is not limited thereto. It should be noted that the electronic device may be any combination of the foregoing, but is not limited thereto. In addition, the appearance of the electronic device may be a rectangular, circular, polygonal, a shape with curved edges, or other suitable shapes. The electronic device may have a peripheral system such as a drive system, a control system, a light source system, etc. to support a display device, an antenna device, a wearable device (such as including augmented reality or virtual reality), a vehicle-mounted device (such as including a car windshield), or a splicing device.

[0024] The following figures indicate a direction V, a direction X, and a direction Y. Direction V may be a normal direction or a top-down direction, while directions X and Y may be horizontal directions. Figure 1, direction V may be perpendicular to a surface (such as the upper surface or the lower surface) of a substrate 100 , direction X and direction Y may be perpendicular to direction V or parallel to the surface of the substrate 100 , and direction X may be perpendicular to direction Y. The following figures may describe the spatial relationship of the structure according to direction V, direction X, and direction Y.

[0025] Please refer to Figures 1 to 5 , Figure 1 is a cross-sectional schematic diagram of an electronic device according to a first embodiment of the present invention, Figure 2 is a schematic top view of a transistor of an electronic device according to a first embodiment of the present invention, Figure 3 for Figure 1 A partial enlarged view of region Q in Figure 4 FIG. 1 is a partial enlarged view of an example of a conductive element used as a gate in the first embodiment of the present invention. Figure 5 FIG. 4 is a partial enlarged view of another example of a conductive element serving as a gate in the first embodiment of the present invention.

[0026] like Figure 1 The electronic device 1 may include a substrate 100 and a transistor 10 disposed on the substrate 100. The material of the substrate 100 may include glass, quartz, sapphire, polymer (such as polyimide (PI), polyethylene terephthalate (PET)), other suitable materials or combinations thereof, but not limited thereto. The substrate 100 may be a flexible substrate or a hard substrate, but not limited thereto.

[0027] In some embodiments, the transistor 10 may be a top gate thin film transistor or a double gate thin film transistor, but is not limited thereto. Figure 1 The transistor 10 may include a buffer layer 102, a buffer layer 104, an oxide semiconductor 106, a conductive element 108, a conductive element 110, a conductive element 112, a conductive element 114, a conductive element 116, an insulating layer 118, an insulating layer 120, a functional layer 122, a transparent conductive layer 124, a transparent conductive layer 126, a transparent conductive layer 128 and an interlayer dielectric layer 130, but is not limited thereto.

[0028] The buffer layer 102 may be disposed on the substrate 100, the buffer layer 104 may be disposed on the buffer layer 102, and the buffer layer 102 may be disposed between the substrate 100 and the buffer layer 104, but the present invention is not limited thereto. The buffer layer 102 and the buffer layer 104 may include insulating materials, but the present invention is not limited thereto. For example, the buffer layer 102 may include silicon nitride, and the buffer layer 104 may include silicon oxide, but the present invention is not limited thereto.

[0029] The oxide semiconductor 106 may be disposed on the substrate 100. In some embodiments, the oxide semiconductor 106 may be disposed on the buffer layer 104. In some embodiments, the oxide semiconductor 106 may include a first region 132, a second region 134, and another second region 136, but is not limited thereto. The first region 132 may serve as a channel region and may overlap with the conductive element 116 in the direction V, and the second region 134 and the second region 136 may be disposed on both sides of the first region 132 in the direction X. The oxide semiconductor 106 may include a metal oxide semiconductor material, but is not limited thereto. The metal oxide semiconductor material may include indium gallium zinc oxide (IGZO), indium gallium oxide (IGO), indium oxide (In2O3), zinc oxide (ZnO), but is not limited thereto. The thickness of the oxide semiconductor 106 may be, for example, about 300 angstroms, but is not limited thereto.

[0030] In some embodiments, the conductive element 108 may be disposed between the substrate 100 and the second region 134 of the oxide semiconductor 106, and the conductive element 110 may be disposed between the substrate 100 and the second region 136 of the oxide semiconductor 106. In some embodiments, the conductive element 108 and the conductive element 110 may be disposed on the buffer layer 104, the conductive element 108 may be disposed between the buffer layer 104 and the second region 134 of the oxide semiconductor 106, and the conductive element 110 may be disposed between the buffer layer 104 and the second region 136 of the oxide semiconductor 106. Therefore, the second region 134 of the oxide semiconductor 106 may overlap with the conductive element 108, and the second region 136 of the oxide semiconductor 106 may overlap with the conductive element 110. In some embodiments, the conductive element 108 and the conductive element 110 may be disposed below the conductive element 116 and disposed on both sides of the conductive element 116.

[0031] Conductive element 108 and conductive element 110 may include transparent conductive materials, active metals or other suitable materials, but are not limited thereto. Transparent conductive materials may include indium tin oxide (ITO), indium zinc oxide (IZO), other suitable transparent conductive materials or combinations thereof, but are not limited thereto. For example, conductive element 108 and conductive element 110 may include indium tin oxide, and the thickness of conductive element 108 and conductive element 110 may be, for example, about 700 angstroms, but are not limited thereto. In some embodiments, the activity of the active metal may be greater than the activity of the metal element contained in the metal oxide semiconductor material, and the active metal material may include titanium, aluminum or other suitable active metals, but are not limited thereto. For example, if the metal oxide semiconductor material is indium gallium zinc oxide, the activity of the active metal may be greater than the activity of indium, gallium and zinc elements, but are not limited thereto.

[0032] The conductive element 108 may be in contact with the second region 134 of the oxide semiconductor 106, and the conductive element 110 may be in contact with the second region 136 of the oxide semiconductor 106. Figure 1 , the conductive element 108 may be in direct contact with the second region 134 of the oxide semiconductor 106, and the conductive element 110 may be in direct contact with the second region 136 of the oxide semiconductor 106, but the present invention is not limited thereto. By providing the conductive element 108 and the conductive element 110, the conductivity between the second region 134 of the oxide semiconductor 106 and the conductive element 112 and the conductivity between the second region 136 of the oxide semiconductor 106 and the conductive element 114 may be improved. In this way, the efficiency of the transistor may be improved, thereby improving the quality of the electronic device.

[0033] An edge 138 of the conductive element 108 close to the conductive element 116 may have an arc angle, and an edge 140 of the conductive element 110 close to the conductive element 116 may also have an arc angle. The oxide semiconductor 106 is formed on the conductive element 108 and the conductive element 110, so a surface (such as the upper surface) of the oxide semiconductor 106 may have an arc angle 142 located on the edge 138 of the conductive element 108, and the surface of the oxide semiconductor 106 may also have an arc angle 144 located on the edge 140 of the conductive element 110. In this way, the undulation of the oxide semiconductor 106 may be gentler, and the chance of the oxide semiconductor 106 being broken or damaged may be reduced.

[0034] The insulating layer 118 may be disposed on the oxide semiconductor 106, the insulating layer 120 may be disposed on the insulating layer 118, the functional layer 122 may be disposed on the insulating layer 120, and the conductive element 116 may be disposed on the functional layer 122, but the present invention is not limited thereto. The insulating layer 118 may be disposed between the oxide semiconductor 106 and the conductive element 116, and the insulating layer 120 may be disposed between the insulating layer 118 and the conductive element 116, but the present invention is not limited thereto. In the present invention, the insulating layer may include an organic insulating material, an inorganic insulating material, or a combination thereof, but the present invention is not limited thereto. For example, the insulating layer 118 and the insulating layer 120 may include silicon oxide, but the present invention is not limited thereto. In some embodiments, the thickness t1 of the insulating layer 118 may be less than the thickness t2 of the insulating layer 120, but the present invention is not limited thereto.

[0035] The conductive element 116 may overlap with the oxide semiconductor 106, and the conductive element 116 may overlap with at least the first region 132 of the oxide semiconductor 106 and may serve as a gate. In addition, the conductive element 116 may also partially overlap with the conductive element 108 and the conductive element 110. In some embodiments, the top view of the transistor 10 (eg, Figure 2 ), a portion 1081 of the conductive element 108 may overlap with the conductive element 116, and a portion 1101 of the conductive element 110 may overlap with the conductive element 116, but the present invention is not limited thereto.

[0036] like Figure 2 , a portion 1161 of the conductive element 116 is located between the conductive element 108 and the conductive element 110, and a ratio of a length L1 of the portion 1081 of the conductive element 108 in the direction X to a length L2 of the portion 1161 of the conductive element 116 in the direction X may be greater than or equal to 1 / 3 and less than or equal to 2 / 3. For example, the length L1 of the portion 1081 of the conductive element 108 may be greater than or equal to 1 micrometer (μm) and less than or equal to 2.5 micrometers, and the length L2 of the portion 1161 of the conductive element 116 may be greater than or equal to 3 micrometers and less than or equal to 6 micrometers, but the present invention is not limited thereto. The portion 1101 of the conductive element 110 may also have the same features as the portion 1081 of the conductive element 108, so it is not repeated here.

[0037] In some embodiments, the conductive element 116 may include a single-layer structure, and the conductive element 116 may include a metal material (such as molybdenum, aluminum, copper, etc.), a transparent conductive material, other suitable conductive materials, or a combination thereof, but not limited thereto. In some embodiments, the conductive element 116 may include a multi-layer structure, and the conductive element 116 may include molybdenum / aluminum / molybdenum, titanium nitride / copper / copper and magnesium aluminum alloy (Cu:MgAl), titanium nitride / aluminum / molybdenum / indium zinc oxide, or titanium / aluminum / molybdenum nitride, but not limited thereto.

[0038] exist Figure 4In one example, the conductive element 116 may include a multi-layer structure and may include a sub-conductive member 1160, a sub-conductive member 1162, and a sub-conductive member 1164, but is not limited thereto. The sub-conductive member 1160 may be close to the oxide semiconductor 106 and may be disposed on the functional layer 122, the sub-conductive member 1162 may be disposed on the sub-conductive member 1160, the sub-conductive member 1164 may be disposed on the sub-conductive member 1162, and the sub-conductive member 1162 may be disposed between the sub-conductive member 1160 and the sub-conductive member 1164.

[0039] The edge of the sub-conductive member 1160 may have an angle M1, and the angle M1 may be the angle between the edge (such as the side edge) and the bottom surface of the sub-conductive member 1160. The edge of the sub-conductive member 1162 may have an angle M2, and the angle M2 may be the angle between the edge (such as the side edge) and the bottom surface of the sub-conductive member 1162. The edge of the sub-conductive member 1164 may have an angle M3, and the angle M3 may be the angle between the edge (such as the side edge) and the bottom surface of the sub-conductive member 1164. In addition, the angle M1 may be greater than the angle M2, the angle M1 may be greater than the angle M3, and the angle M2 may be greater than the angle M3, but it is not limited thereto.

[0040] For example, sub-conductive member 1160 may include titanium, sub-conductive member 1162 may include aluminum, and sub-conductive member 1164 may include molybdenum nitride, wherein sub-conductive member 1160 may be formed by dry etching, and sub-conductive member 1162 and sub-conductive member 1164 may be formed by wet etching, but are not limited thereto.

[0041] exist Figure 5 In another example, the angle M3 may be greater than the angle M2, and the angle M2 may be greater than the angle M1, but is not limited thereto.

[0042] Please refer to Figure 1 , the functional layer 122 may be disposed between the insulating layer 120 and the conductive element 116. The material of the functional layer 122 may include titanium nitride, but is not limited thereto. The functional layer 122 may improve the adhesion between the insulating layer 120 and the conductive element 116 or adjust the work function, but is not limited thereto. The length of the functional layer 122 may be less than the length of the insulating layer 120, so a portion of the upper surface of the insulating layer 120 may not be covered by the functional layer 122, but is not limited thereto.

[0043] In addition, the length of the conductive element 116 may be less than the length of the functional layer 122, so a portion of the upper surface of the functional layer 122 may not be covered by the conductive element 116, but the present invention is not limited thereto. On the same side of the direction X, a distance D1 between the edge of the conductive element 116 and the edge of the functional layer 122 may be 0.2 μm to 0.6 μm (0.2 μm ≤ distance ≤ 0.6 μm), and the distance D1 may be about 0.3 μm, 0.4 μm, 0.5 μm, but the present invention is not limited thereto.

[0044] The conductive element 112 and the conductive element 114 may be disposed on the oxide semiconductor 106 and overlap the conductive element 108 and the conductive element 110. In some embodiments, the interlayer dielectric layer 130 may include a contact hole 146 and a contact hole 148, the contact hole 146 may expose a portion of the upper surface of the second region 134 of the oxide semiconductor 106, and the contact hole 148 may expose a portion of the upper surface of the second region 136 of the oxide semiconductor 106. The conductive element 112 may be disposed on the interlayer dielectric layer 130 and may be filled in the contact hole 146, and the conductive element 112 may be in direct contact with the second region 134 of the oxide semiconductor 106, so that the conductive element 112 may be electrically connected to the second region 134 of the oxide semiconductor 106. The conductive element 114 may be disposed on the interlayer dielectric layer 130 and may be filled in the contact hole 148, and the conductive element 114 may be in direct contact with the second region 136 of the oxide semiconductor 106, so that the conductive element 114 may be electrically connected to the second region 136 of the oxide semiconductor 106. The conductive element 112 may be one of a source and a drain, and the conductive element 114 may be the other of a source and a drain.

[0045] In the top view of transistor 10 (eg Figure 2 ), the conductive element 112 and the conductive element 114 may each have at least one arc angle 150. The conductive element 112 may have a width W1 in the direction Y, and the oxide semiconductor 106 may have a width W2 in the direction Y, and the width W1 may be greater than the width W2. In addition, the conductive element 114 may also have the same characteristics as the conductive element 112. When the widths of the conductive element 112 and the conductive element 114 are greater than the width of the oxide semiconductor 106, the potential of the oxide semiconductor 106 can be effectively controlled by the conductive element 112 and the conductive element 114, thereby improving the electrical characteristics of the transistor 10.

[0046] The conductive element 112 and the conductive element 114 may include a metal material or a transparent conductive material, but are not limited thereto. In some embodiments, the conductive element 112 and the conductive element 114 may include a single-layer structure, and the conductive element 112 and the conductive element 114 may include a metal material (such as molybdenum, aluminum, copper, etc.), a transparent conductive material, other suitable conductive materials, or a combination thereof, but are not limited thereto. In some embodiments, the conductive element 112 and the conductive element 114 may include a multi-layer structure, and the conductive element 112 and the conductive element 114 may include molybdenum / aluminum / molybdenum, titanium nitride / copper / copper and magnesium aluminum alloy (Cu:MgAl), titanium nitride / aluminum / molybdenum / indium zinc oxide, or titanium / aluminum / molybdenum nitride, but are not limited thereto.

[0047] The transparent conductive layer 124 may be selectively disposed on the conductive element 112, the transparent conductive layer 126 may be selectively disposed on the conductive element 114, and the transparent conductive layer 128 may be selectively disposed on the conductive element 116. The length of the transparent conductive layer 124 may be shorter than the length of the conductive element 112, so a portion of the upper surface of the conductive element 112 may not be covered by the transparent conductive layer 124. The length of the transparent conductive layer 126 may be shorter than the length of the conductive element 114, so a portion of the upper surface of the conductive element 114 may not be covered by the transparent conductive layer 126. The length of the transparent conductive layer 128 may be shorter than the length of the conductive element 116, so a portion of the upper surface of the conductive element 116 may not be covered by the transparent conductive layer 128.

[0048] The transparent conductive layer of the present invention may include indium tin oxide, indium zinc oxide, other suitable transparent conductive materials or a combination thereof, but is not limited thereto. In some embodiments, the conductive element 112 and the conductive element 114 may include a multilayer structure of titanium nitride / copper, and the transparent conductive layer 124, the transparent conductive layer 126 and the transparent conductive layer 128 may include indium zinc oxide, but are not limited thereto. The transparent conductive layer 124, the transparent conductive layer 126 and the transparent conductive layer 128 may be used to protect the conductive element 112, the conductive element 114 and the conductive element 116, and may reduce the chance of oxidation of the conductive element 112, the conductive element 114 and the conductive element 116.

[0049] The interlayer dielectric layer 130 may be disposed on the conductive element 116, and the transparent conductive layer 128 may be disposed between the conductive element 116 and the interlayer dielectric layer 130. In addition, the interlayer dielectric layer 130 may be disposed between the second region 134 of the oxide semiconductor 106 and the conductive element 112, and may be disposed between the second region 136 of the oxide semiconductor 106 and the conductive element 114. The interlayer dielectric layer 130 may include an organic insulating material, an inorganic insulating material, or a combination thereof, but is not limited thereto. In some embodiments, the interlayer dielectric layer 130 may include silicon oxide, but is not limited thereto.

[0050] like Figure 1 , the electronic device 1 may further include an insulating layer 152, an insulating layer 154, an insulating layer 156, an insulating layer 158, an insulating layer 160, a conductive element 162, a conductive element 164, a conductive element 166, a conductive element 168, a transparent conductive layer 182, and a transparent conductive layer 184, but the present invention is not limited thereto. The insulating layer 152 may be disposed on the interlayer dielectric layer 130 and may be disposed on the conductive element 112, the conductive element 114, the transparent conductive layer 124, and the transparent conductive layer 126. The insulating layer 152 may include silicon oxynitride (SiON), but the present invention is not limited thereto. The insulating layer 154 may be disposed on the insulating layer 152, and the insulating layer 154 may include silicon oxide, but the present invention is not limited thereto.

[0051] The insulating layer 156 may be disposed on the insulating layer 154, and the insulating layer 156 may overlap with the conductive element 116, and the insulating layer 156 may not overlap with at least a portion of the conductive element 112 and at least a portion of the conductive element 114, but the present invention is not limited thereto. The thickness of the insulating layer 156 may be 2 microns to 3 microns, and the thickness of the insulating layer 156 may be approximately 2.2 microns, 2.4 microns, 2.6 microns, and 2.8 microns, but the present invention is not limited thereto. The insulating layer 158 may be disposed on the insulating layer 156 and the insulating layer 154, and the insulating layer 158 may include silicon nitride, but the present invention is not limited thereto.

[0052] The electronic device 1 may include a contact hole 170 and a contact hole 172. The contact hole 170 may pass through the insulating layer 158, the insulating layer 154 and the insulating layer 152 and expose a portion of the upper surface of the transparent conductive layer 124, while the contact hole 172 may pass through the insulating layer 158, the insulating layer 154 and the insulating layer 152 and expose a portion of the upper surface of the transparent conductive layer 126.

[0053] The conductive element 162 may be disposed on the conductive element 112 and electrically connected to the conductive element 112, and the conductive element 164 may be disposed on the conductive element 114 and electrically connected to the conductive element 114. In some embodiments, the conductive element 162 may be disposed on the insulating layer 158 and may fill the contact hole 170, and the conductive element 162 may directly contact the transparent conductive layer 124, so the conductive element 162 may be electrically connected to the transparent conductive layer 124 and the conductive element 112. In some embodiments, the conductive element 164 may be disposed on the insulating layer 158 and may fill the contact hole 172, and the conductive element 164 may directly contact the transparent conductive layer 126, so the conductive element 164 may be electrically connected to the transparent conductive layer 126 and the conductive element 114.

[0054] The conductive element 162 and the conductive element 164 may include a metal material or a transparent conductive material, but are not limited thereto. In some embodiments, the conductive element 162 and the conductive element 164 may include a single-layer structure, and the conductive element 162 and the conductive element 164 may include a metal material (such as molybdenum, aluminum, copper, etc.), a transparent conductive material, other suitable conductive materials, or a combination thereof, but are not limited thereto. In some embodiments, the conductive element 162 and the conductive element 164 may include a multilayer structure, and the conductive element 162 and the conductive element 164 may include molybdenum / aluminum / molybdenum, titanium nitride / copper / copper and magnesium aluminum alloy (Cu:MgAl), titanium nitride / aluminum / molybdenum / indium zinc oxide, or titanium / aluminum / molybdenum nitride, but are not limited thereto.

[0055] like Figure 1 , the conductive element 162 may include a sub-conductive member 174 and a sub-conductive member 176, and the sub-conductive member 176 may be disposed on the sub-conductive member 174, but is not limited thereto. The conductive element 164 may include a sub-conductive member 178 and a sub-conductive member 180, and the sub-conductive member 180 may be disposed on the sub-conductive member 178, but is not limited thereto. In some embodiments, the sub-conductive members 174 and the sub-conductive members 178 may include a titanium nitride layer and a copper layer disposed on the titanium nitride layer, and the sub-conductive members 176 and the sub-conductive members 180 may include a copper and magnesium-aluminum alloy layer, but are not limited thereto.

[0056] The transparent conductive layer 182 may be selectively disposed on the sub-conductive member 176 of the conductive element 162, and the transparent conductive layer 184 may be selectively disposed on the sub-conductive member 180 of the conductive element 164. The length of the transparent conductive layer 182 may be smaller than the length of the conductive element 162, for example, a portion of the upper surface of the sub-conductive member 176 of the conductive element 162 may not be covered by the transparent conductive layer 182. The length of the transparent conductive layer 184 may be smaller than the length of the conductive element 164, for example, a portion of the upper surface of the sub-conductive member 180 of the conductive element 164 may not be covered by the transparent conductive layer 184.

[0057] In some embodiments, transparent conductive layer 182 and transparent conductive layer 184 may include indium zinc oxide, but are not limited thereto. Transparent conductive layer 182 and transparent conductive layer 184 may be used to protect conductive element 162 and conductive element 164 and reduce the chance of conductive element 162 and conductive element 164 being oxidized.

[0058] The insulating layer 160 may be disposed on the insulating layer 158 and may be disposed on the conductive element 162, the conductive element 164, the transparent conductive layer 182, and the transparent conductive layer 184. The thickness of the insulating layer 160 may be about 0.5 micrometers, but is not limited thereto. The insulating layer 160 may include a contact hole 186 and a contact hole 188. In some embodiments, the contact hole 186 may also pass through the transparent conductive layer 182, the sub-conductive element 176 of the conductive element 162, and a portion of the sub-conductive element 174 of the conductive element 162, and the contact hole 188 may also pass through the transparent conductive layer 184, the sub-conductive element 180 of the conductive element 164, and a portion of the sub-conductive element 178 of the conductive element 164, but is not limited thereto.

[0059] The conductive element 166 may be disposed on the conductive element 162 and electrically connected to the conductive element 162, and the conductive element 168 may be disposed on the conductive element 164 and electrically connected to the conductive element 164. Figure 1 , a portion of the conductive element 166 may be disposed on the insulating layer 160, and another portion of the conductive element 166 may be disposed in the contact hole 186 and may be in direct contact with the transparent conductive layer 182 and the sub-conductive elements 176 and 174 of the conductive element 162, but the present invention is not limited thereto. A portion of the conductive element 168 may be disposed on the insulating layer 160, and another portion of the conductive element 168 may be disposed in the contact hole 188 and may be in direct contact with the transparent conductive layer 184 and the sub-conductive elements 180 and 178 of the conductive element 164, but the present invention is not limited thereto. The conductive element 166 and the conductive element 168 may include an alloy of nickel and gold, but the present invention is not limited thereto. In some embodiments, the electronic unit may be bonded to the conductive element 166 and / or the conductive element 168 (not shown), and the transistor 10 may be electrically connected to the electronic unit through the conductive element 166 and / or the conductive element 168, but the present invention is not limited thereto.

[0060] like Figure 3 In some embodiments, the conductive element 168 may include a top portion 168T, a middle portion 168M, and a bottom portion 168B, and the middle portion 168M may be disposed between the top portion 168T and the bottom portion 168B, but is not limited thereto. The top portion 168T may be disposed on the insulating layer 160, and the middle portion 168M and the bottom portion 168B may be disposed in the contact hole 188. The bottom portion 168B may be disposed under the sub-conductive member 180 of the conductive element 164, and the bottom portion 168B may have a chamfer 190. The chamfer 190 may be located on the upper surface of the conductive element 164 (e.g., Figure 3 The conductive element 166 is formed on the conductive element 164 of the embodiment of the present invention. ...

[0061] The content of the present invention is not limited to the above-mentioned embodiments. Other embodiments of the present invention will be further disclosed below. However, in order to simplify the description and highlight the differences between the embodiments, the same reference numerals are used below to mark the same elements, and the repeated parts will not be repeated.

[0062] Please refer to Figure 6 , Figure 6 Schematic cross-sectional view of a transistor according to a second embodiment of the present invention. In some embodiments, the conductive element 116 may not overlap with the conductive element 108, and the conductive element 116 may not overlap with the conductive element 110, but the present invention is not limited thereto. An edge 116L of the conductive element 116 may be adjacent to the edge 138 of the conductive element 108, and the edge 116L of the conductive element 116 and the edge 138 of the conductive element 108 may be separated by a distance D2 in the direction X. An edge 116R of the conductive element 116 may be adjacent to the edge 140 of the conductive element 110, and the edge 116R of the conductive element 116 and the edge 140 of the conductive element 110 may be separated by a distance D3 in the direction X.

[0063] In some embodiments, the oxide semiconductor 106 may include a first region 132, a second region 134, another second region 136, a third region 192, and another third region 194, but the present invention is not limited thereto. The first region 132 may overlap with the conductive element 116, the second region 134 may overlap with the conductive element 108, the second region 136 may overlap with the conductive element 110, the third region 192 may be disposed between the first region 132 and the second region 134, and the third region 194 may be disposed between the first region 132 and the second region 136. In the direction X, the third region 192 may be located between an extension line of an edge 116L of the conductive element 116 (as shown by a dotted line in the figure) and an extension line of an edge 138 of the conductive element 108, and the third region 194 may be located between an extension line of an edge 116R of the conductive element 116 and an extension line of an edge 140 of the conductive element 108. When the oxide semiconductor 106 includes the third region 192 and the third region 194 , the ability of the transistor 10 to withstand high voltage can be improved, thereby improving the reliability of the transistor 10 .

[0064] In some embodiments, the conductivity of the second region 134 and the second region 136 may be greater than the conductivity of the first region 132, and the conductivity of the first region 132 may be greater than the conductivity of the third region 192 and the third region 194. In some embodiments, the hydrogen concentration of the third region 192 and the third region 194 may be greater than the hydrogen concentration of the first region 132. In some embodiments, the hydrogen concentration of the third region 192 and the third region 194 may be greater than the hydrogen concentration of the second region 134 and the second region 136. By increasing the hydrogen concentration of the third region 192 and the third region 194, the conductivity of the third region 192 and the third region 194 may be more consistent with the conductivity of the first region 132, or the conductivity of the third region 192 and the third region 194 may be more consistent with the conductivity of the second region 134 and the second region 136.

[0065] In some embodiments, edge 138 of conductive element 108 may be aligned with edge 116L of conductive element 116, and edge 140 of conductive element 108 may be aligned with edge 116R of conductive element 116. At this time, third region 192 and third region 194 may not exist in oxide semiconductor 106. In addition, Figure 1 The insulating layer 152, insulating layer 154, insulating layer 156, insulating layer 158, insulating layer 160, conductive element 162, conductive element 164, conductive element 166, conductive element 168, transparent conductive layer 182, and transparent conductive layer 184 in the embodiment may also be combined with Figure 6 The structure of the second embodiment may be arranged in Figure 6 on transistor 10.

[0066] Please refer to Figure 7 , Figure 7 Schematic cross-sectional view of a transistor of the third embodiment of the present invention. The transistor 10 of the present embodiment may be a bottom gate thin film transistor, but is not limited thereto. The conductive element 116 may be disposed on the substrate 100 and may serve as a gate. The insulating layer 118 may be disposed on the substrate 100 and the conductive element 116, and the insulating layer 120 may be disposed on the insulating layer 118. The conductive element 108 and the conductive element 110 may be disposed on the insulating layer 120, the conductive element 108 and the conductive element 110 may be disposed above the conductive element 116 and on both sides of the conductive element 116, the portion 1081 of the conductive element 108 may overlap with the conductive element 116, and the portion 1101 of the conductive element 110 may overlap with the conductive element 116, but is not limited thereto.

[0067] The oxide semiconductor 106 may be disposed on the insulating layer 120, the conductive element 112 may be disposed on the conductive element 108 and the oxide semiconductor 106, and the conductive element 114 may be disposed on the conductive element 110 and the oxide semiconductor 106. The second region 134 of the oxide semiconductor 106 may be disposed between the portion 1081 of the conductive element 108 and the conductive element 112, and the second region 136 of the oxide semiconductor 106 may be disposed between the portion 1101 of the conductive element 110 and the conductive element 114, but the present invention is not limited thereto.

[0068] The transparent conductive layer 124 may be selectively disposed on the conductive element 112, and the transparent conductive layer 126 may be selectively disposed on the conductive element 114. The length of the transparent conductive layer 124 may be shorter than the length of the conductive element 112, so a portion of the upper surface of the conductive element 112 may not be covered by the transparent conductive layer 124. The length of the transparent conductive layer 126 may be shorter than the length of the conductive element 114, so a portion of the upper surface of the conductive element 114 may not be covered by the transparent conductive layer 126.

[0069] also, Figure 1 The insulating layer 152, insulating layer 154, insulating layer 156, insulating layer 158, insulating layer 160, conductive element 162, conductive element 164, conductive element 166, conductive element 168, transparent conductive layer 182, and transparent conductive layer 184 in the embodiment may also be combined with Figure 7 The structure of the third embodiment may be arranged in Figure 7 on transistor 10.

[0070] In summary, in the electronic device of the present invention, a conductive element having a transparent conductive material can be disposed between the substrate and the second region of the oxide semiconductor, which can improve the conductivity between the second region of the oxide semiconductor and the conductive element of the source or drain. In this way, the efficiency of the transistor can be improved and the quality of the electronic device can be improved. A surface (such as the upper surface) of the oxide semiconductor can have an arc angle located on the edge of the conductive element, so that the undulation of the oxide semiconductor can be gentler, which can reduce the chance of fracture or damage of the oxide semiconductor. In addition, in the top view of the transistor, the conductive element of the source or drain can have at least one arc angle.

[0071] The above description is only an embodiment of the present invention and is not intended to limit the present invention. For those skilled in the art, the present invention may have various modifications and variations. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention shall be included in the protection scope of the present invention.

Claims

1. An electronic device, characterized in that: include: a substrate; as well as a transistor, disposed on the substrate, wherein the transistor comprises: An oxide semiconductor, disposed on the substrate; a first conductive element disposed between the substrate and the oxide semiconductor; and A second conductive element is disposed on the oxide semiconductor and overlaps with the first conductive element, wherein in a top view of the transistor, the second conductive element has an arc angle.

2. The electronic device according to claim 1, wherein: The first conductive element is in contact with the oxide semiconductor.

3. The electronic device according to claim 1, wherein: The first conductive element includes a transparent conductive material.

4. The electronic device according to claim 1, wherein: The second conductive element includes a metal material or a transparent conductive material.

5. The electronic device according to claim 1, wherein: The transistor further comprises: a third conductive element overlapping the oxide semiconductor; and a fourth conductive element disposed between the substrate and the oxide semiconductor, and the fourth conductive element and the first conductive element are disposed on both sides of the third conductive element, In the top view of the transistor, a portion of the first conductive element overlaps with the third conductive element, a portion of the third conductive element is located between the first conductive element and the fourth conductive element, and a ratio of a length of the portion of the first conductive element to a length of the portion of the third conductive element is greater than or equal to 1 / 3 and less than or equal to 2 / 3.

6. The electronic device as claimed in claim 5, characterized in that: The third conductive element comprises: a first sub-conductive element, close to the oxide semiconductor, wherein in a cross-sectional view of the transistor, an edge of the first sub-conductive element has a first angle; a second sub-conductive member disposed on the first sub-conductive member, wherein in the cross-sectional view of the transistor, an edge of the second sub-conductive member has a second angle; and a third sub-conductive member, wherein the second sub-conductive member is disposed between the first sub-conductive member and the third sub-conductive member, and in the cross-sectional view of the transistor, an edge of the third sub-conductive member has a third angle, The first angle is greater than the second angle, and the second angle is greater than the third angle.

7. The electronic device according to claim 1, wherein: The transistor further includes a third conductive element overlapping the oxide semiconductor, and an edge of the first conductive element is aligned with an edge of the third conductive element.

8. The electronic device as claimed in claim 1, wherein: The transistor further includes a third conductive element overlapping the oxide semiconductor, an edge of the third conductive element is adjacent to an edge of the first conductive element, and the edge of the third conductive element is spaced a distance from the edge of the first conductive element.

9. The electronic device as claimed in claim 8, characterized in that: The oxide semiconductor includes: a first region overlapping the third conductive element; a second region overlapping the first conductive element; and a third zone, disposed between the first zone and the second zone, The conductivity of the second region is greater than that of the first region, and the conductivity of the first region is greater than that of the third region.

10. The electronic device as claimed in claim 8, characterized in that The oxide semiconductor includes: a first region overlapping the third conductive element; a second region overlapping the first conductive element; and a third zone, disposed between the first zone and the second zone, The hydrogen concentration in the third region is greater than the hydrogen concentration in the first region.

11. The electronic device according to claim 10, wherein: The hydrogen concentration of the third region is greater than a hydrogen concentration of the second region.

12. The electronic device as claimed in claim 1, wherein: The transistor further comprises: a third conductive element overlapping the oxide semiconductor; a first insulating layer disposed between the oxide semiconductor and the third conductive element; A second insulating layer is disposed between the first insulating layer and the third conductive element, and a thickness of the first insulating layer is smaller than a thickness of the second insulating layer.

13. The electronic device as claimed in claim 1, wherein: In the cross-sectional view of the transistor, a surface of the oxide semiconductor has an arc angle located on an edge of the first conductive element.

14. The electronic device as claimed in claim 1, wherein: Also includes: a fourth conductive element, disposed on the second conductive element and electrically connected to the second conductive element; as well as A fifth conductive element is disposed on the fourth conductive element and electrically connected to the fourth conductive element, wherein a bottom of the fifth conductive element has a chamfer, and the chamfer is located below an upper surface of the fourth conductive element.

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