Light emitting diode and light emitting device

Abstract

The invention discloses a light-emitting diode and a light-emitting device. The light-emitting diode comprises a substrate, a functional layer, an epitaxial layer, an electrode and a first retaining wall, wherein the functional layer is arranged on the substrate, and the surface of the functional layer comprises a first area and a second area. The epitaxial layer is stacked on the first region of the functional layer to form a light-emitting region. The electrode is arranged on the second area of the functional layer and is electrically connected with the epitaxial layer through the functional layer. An isolation groove is formed in the second region between the electrode and the epitaxial layer. The first retaining wall is arranged on the bottom wall of the isolation groove between the electrode and the epitaxial layer so as to isolate the electrode from the epitaxial layer, and gaps are formed between the electrode and the first retaining wall and between the epitaxial layer and the first retaining wall. The first retaining wall is arranged to isolate the electrode from the epitaxial layer, so that the problem of electric leakage can be effectively avoided, and the reliability of the light-emitting diode is improved; meanwhile, light reflection can be increased, light absorption of the electrodes can be blocked, and the brightness of the light-emitting diode is improved.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor devices, and in particular to a light emitting diode and a light emitting device. Background Art

[0002] Vertical LED chips are widely used in special lighting, projectors, car lights and other fields due to their advantages of low voltage, high heat dissipation and high current resistance, but their process is relatively complex. Generally, the epitaxial layer of the vertical LED chip is formed on the growth substrate. After the growth substrate is laser stripped, the epitaxial layer needs to be deeply etched on the side where the epitaxial layer and the growth substrate are combined to expose the underlying insulating layer and form a channel. However, after laser stripping, the surface of the epitaxial layer is often uneven, especially the epitaxial layer formed on a patterned substrate. The uneven surface of the epitaxial layer easily forms an uneven surface at the bottom or side slope of the channel when the epitaxial layer is deeply etched. Conductive impurities are easily adsorbed on the uneven surface, resulting in leakage. Summary of the invention

[0003] In view of the above-mentioned shortcomings of the prior art, an object of the present invention is to provide a light emitting diode and a light emitting device to prevent the light emitting diode from being turned on in P and N states and causing leakage.

[0004] In order to achieve the above-mentioned object and other related objects, the present invention provides a light emitting diode, the light emitting diode comprising:

[0005] substrate;

[0006] A functional layer is disposed on the substrate, and the surface of the functional layer includes a first area and a second area;

[0007] An epitaxial layer is stacked on the first region of the functional layer to form a light-emitting region;

[0008] An electrode is disposed on the second region of the functional layer and is electrically connected to the epitaxial layer through the functional layer; an isolation groove is formed on the second region between the electrode and the epitaxial layer;

[0009] The first retaining wall is arranged on the bottom wall of the isolation groove between the electrode and the epitaxial layer to isolate the electrode from the epitaxial layer. There is a gap between the electrode and the first retaining wall, and between the epitaxial layer and the first retaining wall.

[0010] According to one aspect of the present invention, there is also provided a light emitting device, comprising a circuit board and at least one light emitting diode arranged on the circuit board, wherein the light emitting diode is the light emitting diode described above.

[0011] Compared with the prior art, the light emitting diode and the light emitting device of the present invention have at least the following beneficial effects:

[0012] The light-emitting diode of the present invention comprises a substrate, a functional layer, an epitaxial layer, an electrode and a first retaining wall. The functional layer is arranged on the substrate, and the surface of the functional layer comprises a first region and a second region. The epitaxial layer is stacked on the first region of the functional layer to form a light-emitting region. The electrode is arranged on the second region of the functional layer, and is electrically connected to the epitaxial layer through the functional layer. An isolation groove is formed on the second region between the electrode and the epitaxial layer. The first retaining wall is arranged on the bottom wall of the isolation groove between the electrode and the epitaxial layer to isolate the electrode from the epitaxial layer, and there is a gap between the electrode and the first retaining wall, and between the epitaxial layer and the first retaining wall. Furthermore, the present invention isolates the electrode from the epitaxial layer through the first retaining wall. On the one hand, it can avoid the leakage problem caused by the wire deviation or the omission of metal particles in the isolation groove, thereby improving the reliability of the light-emitting diode; on the other hand, by adding a retaining wall between the electrode and the light-emitting region, it can increase the reflection of light and reduce the absorption of light by the electrode, thereby improving the brightness of the light-emitting diode.

[0013] Furthermore, the light-emitting device of the present invention includes the above-mentioned light-emitting device and also has the above-mentioned technical effects. BRIEF DESCRIPTION OF THE DRAWINGS

[0014] Figure 1 is a top view of the light emitting diode in Example 1 of the present invention;

[0015] Figure 2 For along Figure 1 A-A' section view;

[0016] Figure 3 For along Figure 1 Sectional view along the B-B' direction;

[0017] Figure 4 A top view of a light emitting diode according to an example of Embodiment 1 of the present invention;

[0018] Figure 5 is a top view of another example of a light emitting diode in Embodiment 1 of the present invention;

[0019] Figure 6 is a top view of a light emitting diode in Example 2 of the present invention;

[0020] Figure 7 is a top view of a light emitting diode according to an example of Embodiment 2 of the present invention;

[0021] Figure 8 is a top view of another example of a light emitting diode in embodiment 2 of the present invention;

[0022] Fig. 9 For along Figure 8 Sectional view along the B-B' direction;

[0023] Fig.10 A top view of a light emitting diode according to another example of Embodiment 2 of the present invention;

[0024] Fig.11 It is a top view of another example of a light emitting diode in embodiment 2 of the present invention.

[0025] List of reference numerals:

[0026] 100 substrates

[0027] 200 Functional Layer

[0028] 201 First Area

[0029] 202 Second Area

[0030] 210 Bonding layer

[0031] 220 Electrical connection layer

[0032] 230 Reflection layer

[0033] 240 Insulation layer

[0034] 250 Transparent conductive layer

[0035] 260 protective layer

[0036] 300 Epitaxial layer

[0037] 401 First Electrode

[0038] 402 second electrode

[0039] 500 First retaining wall

[0040] 501 Part 1

[0041] 502 Part 2

[0042] 503 Part 3

[0043] 504 Part 4

[0044] 510 First End

[0045] 520 Second End

[0046] 600 Second retaining wall

[0047] 601 Part 1

[0048] 602 Part 2

[0049] 6021 Division 1

[0050] 6022 Second Division

[0051] 6023 First Sub-unit

[0052] 6024 Second Sub-unit

[0053] 700 Enclosure retaining wall

[0054] 701 First enclosure retaining wall

[0055] 702 Second enclosure retaining wall

[0056] 800 Isolation Tank

[0057] 801 bottom wall DETAILED DESCRIPTION

[0058] The following specific embodiments illustrate the embodiments of the present invention, and those familiar with the art can easily understand other advantages and effects of the present invention from the contents disclosed in this specification. The present invention can also be implemented or applied through other different specific embodiments, and the details in this specification can also be modified or changed in various ways based on different viewpoints and applications without departing from the spirit of the present application. It should be noted that the following embodiments and features in the embodiments can be combined with each other without conflict.

[0059] It should be noted that the diagrams provided in the embodiments of the present invention are only used to illustrate the basic concept of the present invention in a schematic manner. Although the diagrams only show the components related to the present invention rather than being drawn according to the number, shape and size of the components in actual implementation, the form, quantity and proportion of each component can be changed at will during actual implementation, and the layout of the components may also be more complex. The structures, proportions, sizes, etc. illustrated in the drawings of the specification are only used to match the contents disclosed in the specification for people familiar with this technology to understand and read, and are not used to limit the limiting conditions that can be implemented in this application, so they have no technical substantive significance. Any structural modification, change in proportional relationship or adjustment of size should still fall within the scope of the technical content disclosed in this application without affecting the effects and purposes that can be achieved by the present invention.

[0060] In order to solve the technical problems existing in the background technology, this embodiment provides a light emitting diode, which includes:

[0061] substrate;

[0062] A functional layer is disposed on the substrate, and the surface of the functional layer includes a first area and a second area;

[0063] An epitaxial layer is stacked on the first region of the functional layer to form a light-emitting region;

[0064] An electrode is disposed on the second region of the functional layer and is electrically connected to the epitaxial layer through the functional layer; an isolation groove is formed on the second region between the electrode and the epitaxial layer;

[0065] The first retaining wall is arranged on the bottom wall of the isolation groove between the electrode and the epitaxial layer to isolate the electrode from the epitaxial layer. There is a gap between the electrode and the first retaining wall, and between the epitaxial layer and the first retaining wall. In this embodiment, the electrode and the epitaxial layer are isolated by the first retaining wall. Firstly, it can avoid the problem that when evaporating the metal electrode, it is difficult to peel off part of the metal due to the uneven channel surface, and the residual metal particles adhere to the side wall of the epitaxial layer, which easily turns on the P and N of the epitaxial layer and causes leakage. Secondly, during the subsequent packaging and wire bonding, the gold ball for wire bonding can be completely confined in the retaining wall to prevent the gold ball from being bent and pressed to the light-emitting area to cause leakage. In addition, adding a retaining wall between the electrode and the light-emitting area can increase the reflection of light on the one hand, and reduce the absorption of light by the electrode on the other hand, thereby improving the brightness of the light-emitting diode.

[0066] Optionally, the thickness d1 of the first retaining wall is in the range of 0.1 μm ≤ d1 ≤ 100 μm, and the sum of the thickness d1 of the first retaining wall, the interval d2 between the electrode and the first retaining wall, and the interval d3 between the epitaxial layer and the first retaining wall is in the range of 1 μm ≤ d1 + d2 + d3 ≤ 300 μm. By setting an appropriate thickness of the first retaining wall and the sum of d1, d2, and d3, it is possible to ensure the blocking effect of the first retaining wall while avoiding affecting the area of ​​the light-emitting area.

[0067] Optionally, the light emitting diode further comprises:

[0068] The second retaining wall is arranged at the periphery of the epitaxial layer except the area between the electrode and the epitaxial layer, and at the periphery of the electrode. On the one hand, the second retaining wall can improve the continuous direction of stress at the channel, reduce the continuous accumulation of stress, and thus reduce or eliminate stress lines and the abnormality that the epitaxial layer is easy to peel off and fall off; on the other hand, it can effectively prevent the etching solution from penetrating into the functional layer and causing damage to the functional layer, further improving the reliability of the light-emitting diode.

[0069] Optionally, the first retaining wall, the second retaining wall and the epitaxial layer are of the same height. The first retaining wall, the second retaining wall and the epitaxial layer can be formed by the same process, without adding new process steps and without increasing costs.

[0070] Optionally, the second retaining wall includes a first portion disposed at the periphery of the epitaxial layer and a second portion disposed at the periphery of the electrode.

[0071] Optionally, the first portion of the second retaining wall is connected to the second portion of the second retaining wall to form an enclosing retaining wall to surround the epitaxial layer and the electrode within the enclosing retaining wall, and the first retaining wall is connected to the second retaining wall.

[0072] Optionally, the first retaining wall includes a first end and a second end, the first retaining wall extends between the electrode and the epitaxial layer from the first end to the second end, the first end is connected to the enclosing retaining wall, and the second end is connected to the enclosing retaining wall.

[0073] Optionally, the second part of the second retaining wall located at the periphery of each electrode is connected to the first retaining wall to form an enclosure retaining wall to enclose the electrode in the enclosure retaining wall, and each enclosure retaining wall is disconnected from the first part of the second retaining wall. The enclosure retaining wall encloses the electrode in the enclosure retaining wall, and the electrode is completely isolated through the enclosure retaining wall. On the one hand, it can prevent leakage caused by metal particles remaining in the isolation groove when the electrode is formed; on the other hand, when the wire is bonded, the gold ball for the wire bonding can be completely confined in the retaining wall to prevent the gold ball from being bent and pressed to the light-emitting area to cause leakage. In addition, by disconnecting the enclosure retaining wall from the first part of the second retaining wall, the passage can be isolated, which is conducive to detecting the two disconnected parts separately when an electrical abnormality occurs, so as to quickly eliminate the abnormality. Optionally, the first part of the second retaining wall is connected to the second part of the second retaining wall to form an enclosure retaining wall to enclose the epitaxial layer and the electrode in the enclosure retaining wall, and the first retaining wall is not connected to the second retaining wall. Such a setting of the retaining wall can completely correspond to the edge of the light-emitting area, without causing the partial area to be unable to reflect the light of the light-emitting area due to disconnection, completely blocking the light reflected from the light-emitting area to the electrode and reflecting the light. In addition, the retaining wall is set in sections to facilitate detection and testing when abnormal conditions occur.

[0074] Optionally, the electrode includes a first electrode and a second electrode, the first electrode is electrically connected to the first semiconductor layer of the epitaxial layer, the second electrode is electrically connected to the second semiconductor layer of the epitaxial layer, the second retaining wall includes a first part arranged on the periphery of the epitaxial layer and a second part arranged on the periphery of the first electrode and the second electrode, the first part of the second retaining wall is connected to the second part of the second retaining wall to form an enclosing retaining wall, and both ends of the first retaining wall are respectively connected to the enclosing retaining wall.

[0075] Optionally, the electrode includes a first electrode and a second electrode, the first electrode is electrically connected to the first semiconductor layer of the epitaxial layer, the second electrode is electrically connected to the second semiconductor layer of the epitaxial layer, the first retaining wall includes a first portion arranged between the first electrode and the epitaxial layer and a second portion arranged between the second electrode and the epitaxial layer, and the second retaining wall includes a first portion arranged at the periphery of the epitaxial layer and a second portion arranged at the periphery of the first electrode and the second electrode.

[0076] Optionally, the first part of the first retaining wall is connected to the second part of the first retaining wall, the first part of the second retaining wall is connected to the second part of the second retaining wall to form an enclosed retaining wall, and both ends of the first retaining wall are respectively connected to the enclosed retaining wall. Such a design can enclose the electrode and the epitaxial layer respectively, and the retaining wall can block the metal particles caused by the electrode and prevent the wire from deviating. At the same time, the retaining wall can also reflect light and block the electrode from absorbing light, thereby improving the light extraction efficiency.

[0077] Optionally, the first portion of the first retaining wall is disconnected from the second portion of the first retaining wall, the second portion of the second retaining wall includes a first subsection disposed at the periphery of the first electrode and a second subsection disposed at the periphery of the second electrode, and the first subsection is disconnected from the second subsection.

[0078] Optionally, the first subsection is connected to the first part of the first retaining wall, the second subsection is connected to the second part of the first retaining wall, and the first part of the second retaining wall has a discontinuity point at a position close to the second part of the second retaining wall. Since the material of the retaining wall is the same as that of the epitaxial layer, the retaining walls around the two electrodes are disconnected to isolate the two electrodes, thereby preventing the P and N electrodes from being turned on due to the skewed position when the P and N electrodes are wired, causing a short circuit. At the same time, the discontinuity point is set in the second retaining wall to facilitate subsequent detection and determination of the abnormal position.

[0079] Optionally, the first part and the second part of the first retaining wall are also disconnected from the first part of the second retaining wall, each sub-part includes a first sub-part close to the first part of the second retaining wall and a second sub-part away from the first part of the second retaining wall, the first sub-part is disconnected from the second sub-part, and each first sub-part is also connected to the first part of the second retaining wall. Such a design can further reduce the leakage channel, and the setting of the disconnection position will not reduce the reflection of light by the retaining wall.

[0080] Optionally, the first retaining wall also includes a third part and a fourth part spaced apart between the first electrode and the second electrode, the third part is disposed close to the first electrode, the fourth part is disposed close to the second electrode, the first part of the first retaining wall, the third part and the first subdivision of the second retaining wall are enclosed to form a first enclosed retaining wall to enclose the first electrode; the second part of the first retaining wall, the fourth part and the second subdivision of the second retaining wall are enclosed to form a second enclosed retaining wall to enclose the second electrode, and at least one of the first enclosed retaining wall and the second enclosed retaining wall is disconnected from the first part of the second retaining wall. Such a design can completely enclose the electrode, completely isolate the electrode from the epitaxial layer, avoid P and N conduction, and is conducive to quickly determining the abnormal position when an electrical abnormality occurs.

[0081] Optionally, the side walls of the first enclosure retaining wall and the second enclosure retaining wall are formed by a plurality of reflective columns arranged at intervals. The reflective columns can completely separate the P electrode and the N electrode, and each reflective column can be shaped as a cylinder, which can increase the reflection area, thereby increasing the reflection of light and improving the light emission efficiency. Optionally, the functional layer includes a bonding layer, an electrical connection layer, a reflective layer, an insulating layer and a transparent conductive layer in sequence from the side close to the substrate.

[0082] Optionally, the light-emitting surface of the epitaxial layer is uneven, and the isolation groove is formed by etching the light-emitting surface of the epitaxial layer. The surface of the sidewalls and bottom wall of the isolation groove formed by etching is uneven. Since the etched surface is uneven, the bottom wall and sidewall of the isolation groove will form an uneven surface. When the electrode film is formed in the isolation groove, when the excess metal film is peeled off and removed, metal particles are likely to remain on the wall of the isolation groove. The metal particles are not easy to remove, and the remaining metal particles are more likely to cause P and N to be turned on, resulting in leakage of the light-emitting diode. In this embodiment, a first retaining wall is set between the electrode and the epitaxial layer, which can effectively avoid this problem.

[0083] According to one aspect of the present invention, a light-emitting device is also provided, including a circuit board and at least one light-emitting diode arranged on the circuit board, the light-emitting diode is the above-mentioned light-emitting diode, and the light-emitting device includes the above-mentioned light-emitting diode and also has the above-mentioned technical effect.

[0084] The present invention is described in detail below with reference to specific examples.

[0085] Example 1

[0086] This embodiment provides a light emitting diode, referring to Figure 2 The light emitting diode includes a substrate 100 , a functional layer 200 , an epitaxial layer 300 , an electrode and a first retaining wall 500 .

[0087] Reference Figure 2 The substrate 100 is a permanent substrate 100, and the substrate 100 is used to transfer the light-emitting diode structure grown on the substrate. The material of the substrate 100 can be GaAs, Ge, Si, Cu, Mo, WCu or MoCu. Optionally, the substrate 100 can be a conductive substrate 100 or an insulating substrate 100. When the electrode is led out from the end of the substrate 100, the substrate 100 can be set as a conductive substrate 100.

[0088] The functional layer 200 is disposed on the substrate 100, and the surface of the functional layer 200 includes a first region 201 and a second region 202. The functional layer 200 includes a bonding layer 210, an electrical connection layer 220, a reflective layer 230, an insulating layer 240 and a transparent conductive layer 250 on the substrate 100 in sequence. The bonding layer 210 is a metal bonding layer, which is used for close connection between the substrate 100 and other layer structures.

[0089] The electrical connection layer 220 is formed on the bonding layer 210, and the electrical connection layer 220 is electrically connected to the epitaxial layer 300 disposed above the functional layer 200. For example, the electrical connection layer 220 can partially penetrate the epitaxial layer 300 and form an electrical connection with one of the semiconductor layers of the epitaxial layer 300. The reflective layer 230 is formed on the electrical connection layer 220, and is used to reflect the light emitted by the epitaxial layer 300. Optionally, the material of the reflective layer 230 can be a metal material with high reflectivity such as silver or aluminum. The insulating layer 240 is formed on the reflective layer 230, and is used to insulate and isolate the two semiconductor layers of the epitaxial layer 300 and prevent leakage. The transparent conductive layer 250 is disposed on the insulating layer 240, in contact with the epitaxial layer 300, and is used for current expansion.

[0090] The epitaxial layer 300 is stacked on the first region 201 of the functional layer 200 to form a light-emitting region. Specifically, the epitaxial layer 300 is disposed on the transparent conductive layer 250 and is electrically connected to the transparent conductive layer 250. The epitaxial layer 300 includes a second semiconductor layer, an active layer, and a first semiconductor layer in sequence on the transparent conductive layer 250. The electrical connection layer 220 penetrates the second semiconductor layer, the active layer, and a portion of the first semiconductor layer and is electrically connected to the first semiconductor layer.

[0091] The electrode is arranged on the second region 202 of the functional layer 200, and is electrically connected to the epitaxial layer 300 through the transparent conductive layer 250 on the functional layer 200. It should be noted that only one type of electrode can be arranged on the second region 202 of the functional layer 200, that is, when the electrode on the second region 202 of the functional layer 200 only leads out the second semiconductor layer, of course, the other electrode of the light-emitting diode can also be led out from the end of the substrate 100 to form a vertical structure chip. Two types of electrodes can also be arranged on the second region 202 of the functional layer 200. At this time, the first semiconductor layer and the second semiconductor layer of the epitaxial layer 300 are both led out on the light-emitting side to form a horizontal chip. In this embodiment, the second semiconductor layer of the epitaxial layer 300 is led out from the functional layer 200 to the second region 202, and a second electrode 402 is formed on the second region 202. The number of the second electrodes 402 can be one or more. Refer to Figure 1 and Figure 3 In this embodiment, the number of the second electrodes 402 is two, and an epitaxial layer 300 is spaced between the two electrodes.

[0092] An isolation groove 800 is also formed on the second region 202 between the electrode and the epitaxial layer 300, and on the peripheral region of the epitaxial layer 300 except the region between the epitaxial layer 300 and the electrode and on the peripheral region of the electrode. The isolation groove 800 located between the electrode and the epitaxial layer 300 isolates the electrode from the epitaxial layer 300. The isolation groove 800 is formed by etching the light-emitting surface of the epitaxial layer 300 to the surface of the functional layer 200. Optionally, the light-emitting surface of the epitaxial layer 300 is a flat surface or an uneven surface. Generally, the epitaxial layer 300 is first formed on a growth substrate to form a first semiconductor layer, an active layer and a second semiconductor layer in sequence, and then a transparent conductive layer 250, an insulating layer 240, a reflective layer 230, an electrical connection layer 220, and a bonding layer 210 of the functional layer 200 are formed on the second semiconductor layer, and the substrate 100 is bonded to the bonding layer 210. Optionally, a protective layer 260 is further provided between the reflective layer 230 and the electrical connection layer 220. The protective layer 260 is made of metal and is used to prevent the material of the reflective layer 230 from diffusing into the electrical connection layer 220 to affect the conductive effect. The growth substrate is subsequently removed to expose the first semiconductor layer of the epitaxial layer 300, that is, the light-emitting surface. When the growth substrate is a patterned substrate, the light-emitting surface of the epitaxial layer 300 is formed as an uneven patterned surface. When etching is subsequently performed along the light-emitting surface of the epitaxial layer 300 to form the isolation groove 800, the bottom wall 801 and the side wall of the isolation groove 800 will form an uneven surface due to the uneven etched surface. When an electrode film is formed in the isolation groove 800, when the excess metal film is peeled off and removed, metal particles are likely to remain on the wall of the isolation groove 800. The metal particles are not easy to remove, and the remaining metal particles are more likely to cause P and N to be turned on, resulting in leakage of the light-emitting diode.

[0093] In order to solve the above technical problems, refer to Figure 1 , 2Or 3, in this embodiment, a first retaining wall 500 is set between the electrode and the epitaxial layer 300. The first retaining wall 500 is set on the bottom wall 801 of the isolation groove 800 between the electrode and the epitaxial layer 300 to further isolate the electrode from the epitaxial layer 300. First, it can avoid that when the metal electrode is evaporated, it is difficult to peel off part of the metal due to the uneven channel surface, and the residual metal particles adhere to the side wall of the epitaxial layer 300, which is easy to turn on the P and N of the epitaxial layer 300 and cause leakage problems. Secondly, during the subsequent packaging and wire bonding, the gold ball for wire bonding can be completely confined within the first retaining wall 500 to prevent the gold ball from being bent and pressed to the light-emitting area to cause leakage problems. In addition, adding the first retaining wall 500 between the electrode and the light-emitting area can increase the reflection of light on the one hand, and reduce the absorption of light by the electrode on the other hand, thereby improving the brightness of the light-emitting diode. Optionally, the height of the first retaining wall 500 is the same as the height of the epitaxial layer 300. Optionally, the first retaining wall 500 is formed by etching the epitaxial layer 300 near the isolation groove 800, and the structural composition of the first retaining wall 500 is the same as that of the epitaxial layer 300. In addition, there is a gap between the electrode and the first retaining wall 500, and between the epitaxial layer 300 and the first retaining wall 500. If the thickness of the first retaining wall 500 is too thin, it will not have the effect of a retaining wall and will be difficult to manufacture. If it is too thick, it will affect the area of ​​the light-emitting area. Optionally, the thickness d1 of the first retaining wall 500 is in the range of 0.1μm≤d1≤100μm. For example, 1 to 30μm. If the values ​​of the interval d2 between the electrode and the first retaining wall 500 and the interval d3 between the epitaxial layer 300 and the first retaining wall 500 are too small, on the one hand, the retaining wall and the light-emitting area cannot be well separated, and they are no different from being connected; on the other hand, it will also increase the difficulty of the process, and a too large value will affect the area of ​​the light-emitting area. Optionally, the range of the interval d2 between the electrode and the first retaining wall 500 is 0.1μm≤d2≤100μm. For example, 1 to 30 μm. The interval d3 between the epitaxial layer 300 and the first retaining wall 500 ranges from 0.1 μm ≤ d2 ≤ 100 μm. For example, 1 to 30 μm. Optionally, the sum of the thickness d1 of the first retaining wall 500, the interval d2 between the electrode and the first retaining wall 500, and the interval d3 between the epitaxial layer 300 and the first retaining wall 500 ranges from 1 μm ≤ d1 + d2 + d3 ≤ 300 μm, for example: 3 μm to 90 μm. This embodiment sets an appropriate thickness of the first retaining wall 500 and the sum of d1, d2, and d3, which can ensure the blocking effect of the first retaining wall while avoiding affecting the area of ​​the light-emitting area.

[0094] The second retaining wall 600 is arranged at the periphery of the epitaxial layer 300 except the area between the electrode and the epitaxial layer 300, and at the periphery of the electrode. The second retaining wall 600 includes a first part 601 arranged at the periphery of the epitaxial layer 300 and a second part 602 arranged at the periphery of the electrode. On the one hand, the second retaining wall 600 can improve the continuous direction of stress at the channel, reduce the continuous accumulation of stress, and thus reduce or eliminate the stress lines and the abnormality of the epitaxial layer being easy to peel off and fall off. On the other hand, it can effectively prevent the etching solution from penetrating into the functional layer 200 and causing damage to the functional layer 200, further improving the reliability of the light-emitting diode. Optionally, the first retaining wall 500 and the second retaining wall 60 are both at the same height as the epitaxial layer 300, and the first retaining wall 500, the second retaining wall 600 and the epitaxial layer 300 can be formed based on the same process, without adding new process steps, and without increasing production costs.

[0095] In one example, if Figure 1 As shown in or 4, the second part 602 of the second retaining wall 600 located at the periphery of each electrode is connected to the first retaining wall 500 to form an enclosure retaining wall, which encloses the electrode in the enclosure retaining wall and completely isolates the electrode through the enclosure retaining wall. On the one hand, it can prevent leakage caused by metal particles remaining in the isolation groove 800 when the electrode is formed. On the other hand, when bonding, the gold balls for bonding can be completely confined in the retaining wall to prevent the gold balls from being bent and pressed to the light-emitting area to cause leakage. In addition, the enclosure retaining wall 700 can also block the light-emitting area from emitting light to the electrode, avoid the electrode from absorbing light, and improve the light output efficiency. The enclosure retaining wall 700 can be disconnected from the first part 601 of the second retaining wall 600, or it can be connected. In one example, as Figure 1 As shown, the enclosed retaining wall 700 is connected to the first portion 601 of the second retaining wall 600. Since all retaining walls are in a continuous state and the material of the retaining walls is the same as that of the epitaxial layer 300, when the P and N wires are off-center, a path leakage will be formed. In order to avoid this leakage phenomenon, as shown in FIG. Figure 4 As shown, the enclosing retaining wall 700 is disconnected from the first part 601 of the second retaining wall 600, so that the passage can be isolated. If an abnormal situation occurs, the two disconnected parts can be detected separately to quickly eliminate the abnormality.

[0096] It should be noted that in Figure 1In the embodiment, the first part 601 of the second retaining wall 600 is connected to the second part 602 of the second retaining wall 600 to form an enclosure retaining wall to enclose the epitaxial layer 300 and the electrode within the enclosure retaining wall, and the first retaining wall 500 is connected to the second retaining wall 600. Specifically, the first retaining wall 500 includes a first end 510 and a second end 520, and the first retaining wall 500 extends from the first end 510 to the second end 520 between the electrode and the epitaxial layer 300, the first end 510 is connected to the enclosure retaining wall, and the second end 520 is connected to the enclosure retaining wall. In other examples, at least one of the first end 510 and the second end 520 may be connected to the enclosure retaining wall.

[0097] In one example, if Figure 5 As shown, the first part 601 of the second retaining wall 600 is connected to the second part 602 of the second retaining wall 600 to form an enclosure retaining wall to surround the epitaxial layer 300 and the electrode within the enclosure retaining wall, and the first retaining wall 500 is not connected to the second retaining wall 600. Such a retaining wall can completely correspond to the edge of the light-emitting area, without causing the partial area to be unable to reflect the light of the light-emitting area due to disconnection, completely blocking the light reflected from the light-emitting area to the electrode, and reflecting the light. In addition, the retaining wall is divided to facilitate detection and testing when abnormal conditions occur.

[0098] Example 2

[0099] This embodiment provides a light emitting diode. The similarities between the light emitting diode and the embodiment 1 are not described in detail here. The difference is that: Figure 6 , Figure 8 and Fig. 9 In the light emitting diode of this embodiment, a first electrode 401 and a second electrode 402 are disposed on the second region 202 of the functional region, and the first electrode 401 and the second electrode 402 are electrically connected to the first semiconductor layer and the second semiconductor layer of the epitaxial layer 300 respectively through the functional layer 200. The first electrode 401 and the second electrode 402 are disposed adjacent to each other, and there is no spacer between the first electrode 401 and the second electrode 402.

[0100] The first retaining wall 500 includes a first portion 501 disposed between the first electrode 401 and the epitaxial layer 300 and a second portion 502 disposed between the second electrode 402 and the epitaxial layer 300 . The second retaining wall 600 includes a first portion 601 disposed around the epitaxial layer 300 and a second portion 602 disposed around the first electrode 401 and the second electrode 402 .

[0101] In one example, if Figure 6As shown, the first part 501 of the first retaining wall 500 is connected to the second part 502 of the first retaining wall 500, the first part 601 of the second retaining wall 600 is connected to the second part 602 of the second retaining wall 600 to form an enclosed retaining wall 700, and both ends of the first retaining wall 500 are respectively connected to the enclosed retaining wall 700. Such a design can enclose the electrode and the epitaxial layer 300 respectively, and the retaining wall can block the metal particles caused by the electrode and prevent the wire from deviating. At the same time, the retaining wall can also reflect light and block the electrode from absorbing light, thereby improving the light extraction efficiency.

[0102] In one example, if Figure 7 As shown, the first part 501 of the first retaining wall 500 is disconnected from the second part 502 of the first retaining wall 500, and the second part 602 of the second retaining wall 600 includes a first sub-part 6021 disposed on the periphery of the first electrode 401 and a second sub-part 6022 disposed on the periphery of the second electrode 402, and the first sub-part 6021 is disconnected from the second sub-part 6022. The first sub-part 6021 is connected to the first part 501 of the first retaining wall 500, and the second sub-part 6022 is connected to the second part 502 of the first retaining wall 500. There is a discontinuity point in the first part 601 of the second retaining wall 600 near the second part 602, because the material of the retaining wall is the same as that of the epitaxial layer 300. The retaining walls on the periphery of the two electrodes are disconnected to isolate the two electrodes, so as to avoid short circuit caused by P and N being turned on due to the skewed position when the P and N electrodes are wired, and the discontinuity point is set in the second retaining wall 600, so as to facilitate subsequent detection and determination of abnormal positions. It should be noted that the discontinuity point can be set between the first part 601 of the second retaining wall 600 and the second part 602 of the second retaining wall 600, that is, the first part 601 of the second retaining wall 600 and the second part 602 of the second retaining wall 600 are not connected; or, the discontinuity point can be set in the first part 601 of the second retaining wall 600, that is, the first part 601 of the second retaining wall 600 and the second part 602 of the second retaining wall 600 are connected, but the embodiments of the present invention are not limited to this. In the embodiments of the present invention, it is to ensure that the retaining walls connecting the electrodes and the periphery of the epitaxial layer 300 can be disconnected and set separately to achieve the technical effect.

[0103] In this example, an alternative example Figure 8As shown, the first retaining wall 500 further includes a third portion 503 and a fourth portion 505 which are arranged between the first electrode 401 and the second electrode 402, the third portion 503 is arranged close to the first electrode 401, and the fourth portion 505 is arranged close to the second electrode 402. The first portion 501 of the first retaining wall 500, the third portion 503 and the first subdivision 6021 of the second retaining wall 600 are enclosed to form a first enclosed retaining wall 701 to enclose the first electrode 401; the second portion 502 of the first retaining wall 500, the fourth portion 505 and the second subdivision 6022 of the second retaining wall 600 are enclosed to form a second enclosed retaining wall 702 to enclose the second electrode 402, and at least one of the first enclosed retaining wall 701 and the second enclosed retaining wall 702 is disconnected from the first portion 601 of the second retaining wall 600. Such a design can completely enclose the electrode, completely isolate the electrode from the epitaxial layer 300, avoid P and N conduction, and is conducive to quickly determining the abnormal position when an electrical abnormality occurs. Alternatively, if Fig.10 As shown, the side walls of the first enclosing retaining wall 701 and the second enclosing retaining wall 702 are formed by a plurality of reflective columns arranged at intervals, which can completely separate the P electrode and the N electrode. At the same time, each reflective column is in the shape of a cylinder, which can increase the reflection area, thereby increasing the reflection of light and improving the light emission efficiency.

[0104] In one example, if Fig.11 As shown, the first portion 501 of the first retaining wall 500 is disconnected from the second portion 502 of the first retaining wall 500, and the second portion 602 of the second retaining wall 600 includes a first sub-portion 6021 disposed at the periphery of the first electrode 401 and a second sub-portion 6022 disposed at the periphery of the second electrode 402, and the first sub-portion 6021 is disconnected from the second sub-portion 6022. The first portion 501 and the second portion 502 of the first retaining wall 500 are also disconnected from the first portion 601 of the second retaining wall 600, respectively, and each sub-portion includes a first sub-portion 6023 close to the first portion 601 of the second retaining wall 600 and a second sub-portion 6024 away from the first portion 601 of the second retaining wall 600, and the first sub-portion 6023 is disconnected from the second sub-portion 6024, and each first sub-portion 6023 is also connected to the first portion 601 of the second retaining wall 600. In this embodiment, the first sub-portion 6023 is connected to the first portion 601 of the second retaining wall 600, and the second sub-portion 6024 is substantially parallel to the first portion 501 of the first retaining wall 500 and the second portion 502 of the first retaining wall 500, but the embodiment of the present invention is not limited thereto. Such a design can further reduce the leakage path, and the setting of the disconnection position will not reduce the reflection of light by the retaining wall.

[0105] Example 3

[0106] This embodiment provides a light-emitting device, which includes a circuit board and at least one light-emitting diode arranged on the circuit board. The light-emitting diode is the light-emitting diode in the above-mentioned embodiment 1 or 2, and also has the above-mentioned technical effects.

[0107] The above embodiments are merely illustrative of the principles and effects of the present invention, and are not intended to limit the present invention. Anyone familiar with the art may modify or alter the above embodiments without departing from the spirit and scope of the present invention. Therefore, all equivalent modifications or alterations made by a person of ordinary skill in the art without departing from the spirit and technical concept disclosed by the present invention shall still be covered by the claims of the present invention.

Claims

1. A light emitting diode, characterized in that: The light emitting diode comprises: substrate; A functional layer is disposed on the substrate, and the surface of the functional layer includes a first area and a second area; an epitaxial layer, stacked on the first region of the functional layer, forming a light-emitting region; an electrode, disposed on the second region of the functional layer and electrically connected to the epitaxial layer through the functional layer; An isolation groove is formed on a second region between the electrode and the epitaxial layer; The first retaining wall is arranged on the bottom wall of the isolation groove between the electrode and the epitaxial layer to isolate the electrode from the epitaxial layer. There is a gap between the electrode and the first retaining wall, and between the epitaxial layer and the first retaining wall.

2. The light emitting diode according to claim 1, characterized in that: The thickness d1 of the first retaining wall is in the range of 0.1 μm≤d1≤100 μm; the sum of the thickness d1 of the first retaining wall, the interval d2 between the electrode and the first retaining wall, and the interval d3 between the epitaxial layer and the first retaining wall is in the range of 1 μm≤d1+d2+d3≤300 μm.

3. The light emitting diode according to claim 1, characterized in that: The light emitting diode further comprises: The second retaining wall is arranged at the periphery of the epitaxial layer except the area between the electrode and the epitaxial layer, and at the periphery of the electrode.

4. The light emitting diode according to claim 3, characterized in that: The first retaining wall, the second retaining wall and the epitaxial layer are at the same height.

5. The light emitting diode according to claim 3, characterized in that: The second barrier wall includes a first portion disposed at the periphery of the epitaxial layer and a second portion disposed at the periphery of the electrode.

6. The light emitting diode according to claim 5, characterized in that: The first portion of the second retaining wall is connected to the second portion of the second retaining wall to form an enclosing retaining wall to surround the epitaxial layer and the electrode within the enclosing retaining wall, and the first retaining wall is connected to the second retaining wall.

7. The light emitting diode according to claim 6, characterized in that: The first retaining wall includes a first end and a second end, the first retaining wall extends between the electrode and the epitaxial layer along the first end to the second end, the first end is connected to the enclosing retaining wall, and the second end is connected to the enclosing retaining wall.

8. The light emitting diode according to claim 5, characterized in that: The second part of the second retaining wall located at the periphery of each electrode is connected to the first retaining wall to form an enclosing retaining wall to enclose the electrode within the enclosing retaining wall, and each of the enclosing retaining walls is disconnected from the first part of the second retaining wall.

9. The light emitting diode according to claim 5, characterized in that: The first part of the second retaining wall is connected to the second part of the second retaining wall to form an enclosing retaining wall to surround the epitaxial layer and the electrode within the enclosing retaining wall, and the first retaining wall is not connected to the second retaining wall.

10. The light emitting diode according to claim 3, characterized in that: The electrode includes a first electrode and a second electrode, the first electrode is electrically connected to the first semiconductor layer of the epitaxial layer, the second electrode is electrically connected to the second semiconductor layer of the epitaxial layer, the second retaining wall includes a first part arranged on the periphery of the epitaxial layer and a second part arranged on the periphery of the first electrode and the second electrode, the first part of the second retaining wall is connected to the second part of the second retaining wall to form an enclosing retaining wall, and the two ends of the first retaining wall are respectively connected to the enclosing retaining wall.

11. The light emitting diode according to claim 3, characterized in that: The electrode includes a first electrode and a second electrode, the first electrode is electrically connected to the first semiconductor layer of the epitaxial layer, the second electrode is electrically connected to the second semiconductor layer of the epitaxial layer, the first retaining wall includes a first portion arranged between the first electrode and the epitaxial layer and a second portion arranged between the second electrode and the epitaxial layer, and the second retaining wall includes a first portion arranged at the periphery of the epitaxial layer and a second portion arranged at the periphery of the first electrode and the second electrode.

12. The light emitting diode according to claim 11, characterized in that: The first part of the first retaining wall is connected to the second part of the first retaining wall, the first part of the second retaining wall is connected to the second part of the second retaining wall to form an enclosed retaining wall, and both ends of the first retaining wall are respectively connected to the enclosed retaining wall.

13. The light emitting diode according to claim 11, characterized in that: The first part of the first retaining wall is disconnected from the second part of the first retaining wall; the second part of the second retaining wall includes a first subsection arranged at the periphery of the first electrode and a second subsection arranged at the periphery of the second electrode, and the first subsection is disconnected from the second subsection.

14. The light emitting diode according to claim 13, characterized in that: The first subsection is connected to the first portion of the first retaining wall, the second subsection is connected to the second portion of the first retaining wall, and the first portion of the second retaining wall has a discontinuity point at a position close to the second portion of the second retaining wall.

15. The light emitting diode according to claim 13, characterized in that: The first part and the second part of the first retaining wall are also respectively disconnected from the first part of the second retaining wall, and each sub-part includes a first sub-part close to the first part of the second retaining wall and a second sub-part away from the first part of the second retaining wall, the first sub-part is disconnected from the second sub-part, and each of the first sub-parts is also connected to the first part of the second retaining wall.

16. The light emitting diode according to claim 13, characterized in that: The first retaining wall also includes a third part and a fourth part which are spaced apart between the first electrode and the second electrode, the third part being arranged close to the first electrode, and the fourth part being arranged close to the second electrode, the first part of the first retaining wall, the third part and the first division of the second retaining wall being combined to form a first enclosing retaining wall to enclose the first electrode; the second part of the first retaining wall, the fourth part and the second division of the second retaining wall being combined to form a second enclosing retaining wall to enclose the second electrode, and at least one of the first enclosing retaining wall and the second enclosing retaining wall is disconnected from the first part of the second retaining wall.

17. The light emitting diode according to claim 16, characterized in that: The side walls of the first enclosure retaining wall and the second enclosure retaining wall are formed by a plurality of reflective columns arranged at intervals.

18. The light emitting diode according to claim 1, characterized in that: The functional layer includes a bonding layer, an electrical connection layer, a reflection layer, an insulation layer and a transparent conductive layer in sequence from a side close to the substrate.

19. The light emitting diode according to claim 1, characterized in that: The light-emitting surface of the epitaxial layer is uneven, and the isolation groove is formed by etching the light-emitting surface of the epitaxial layer. The sidewalls and bottom walls of the isolation groove formed by etching have uneven surfaces.

20. A light emitting device, characterized in that: The invention comprises a circuit board and at least one light emitting diode arranged on the circuit board, wherein the light emitting diode is the light emitting diode according to any one of claims 1 to 19.

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