Honeycomb-shaped flexible thermoelectric power generation sheet

Abstract

The invention discloses a honeycomb-shaped flexible thermoelectric power generation sheet. A plurality of hexagonal holes are distributed in a flexible substrate of the thermoelectric power generation sheet at intervals; at least one N / P type thermoelectric semiconductor is fixedly mounted in each hexagonal hole; the cold end of the N / P type thermoelectric semiconductor is flush with the upper end face of the flexible substrate, and the hot end is flush with the lower end face of the flexible substrate. Each hexagonal hole and an N / P type thermoelectric semiconductor arranged in the hexagonal hole form a honeycomb structure; the N / P type thermoelectric semiconductors are sequentially connected in series according to the N-P-N-P sequence, the two hot ends are connected through a conducting strip, and the two cold ends are connected through a wire. The conducting strip is formed by solidifying a conducting solution. The honeycomb-shaped flexible thermoelectric power generation sheet is inspired by a natural honeycomb-shaped structure, adopts a structure that the N / P type thermoelectric semiconductor is wrapped in the flexible substrate, provides stronger flexibility through the flexible substrate, has the power generation advantage of a rigid semiconductor, and realizes efficient capture of heat energy in the environment.

Description

Technical Field

[0001] The present invention belongs to the technical field of new energy collection, and in particular relates to a honeycomb-shaped flexible temperature difference power generation sheet. Background Art

[0002] The Internet of Things technology has significant significance in improving efficiency, reducing costs and improving the quality of life. However, at the same time, the Internet of Things technology faces development bottlenecks such as long-term and continuous stable energy supply. At present, most of the sensor monitoring nodes used in the Internet of Things technology still need to be charged manually, or a new node is directly replaced after the power is exhausted. It is difficult to achieve autonomous long-term stable power supply. Using the widely existing energy in the environment to power these sensor nodes provides a new idea for active energy capture. Thermal energy is a ubiquitous form of energy, especially for cars, electronic equipment, building walls, etc., which are common in human society. It is an ideal energy source. Therefore, thermoelectric power generation technology has attracted much attention.

[0003] Rigid thermoelectric generators have high power generation efficiency and provide a lot of energy, but their application scenarios are limited by rigidity; thermoelectric generators based on textile substrates or produced with two-dimensional materials or thin film materials are flexible, but have high production costs and low power generation efficiency. Combining the characteristics of rigid thermoelectric generators, making them flexible, expanding their application scenarios, and making them have the advantages of both flexibility and strong power generation capacity is a practical direction to overcome. Summary of the invention

[0004] The present invention provides a honeycomb-shaped flexible temperature difference power generation sheet, which is inspired by the honeycomb structure in nature and adopts a structure in which an N / P type thermoelectric semiconductor is wrapped in a flexible substrate. The flexible substrate provides stronger flexibility while having the power generation advantages of rigid semiconductors, thereby achieving efficient capture of thermal energy in the environment.

[0005] In order to achieve the above object, the present invention adopts the following specific technical solutions:

[0006] A honeycomb-shaped flexible temperature difference power generation sheet, comprising a flexible substrate, an N / P-type thermoelectric semiconductor, an output positive electrode, an output negative electrode, a wire and a conductive sheet;

[0007] The flexible substrate is provided with a plurality of hexagonal holes at intervals; the N / P type thermoelectric semiconductor is a rectangular parallelepiped structure; at least one N / P type thermoelectric semiconductor is fixedly installed in each hexagonal hole; the cold end of the N / P type thermoelectric semiconductor is flush with the upper end surface of the flexible substrate, and the hot end is flush with the lower end surface of the flexible substrate; each of the hexagonal holes and the N / P type thermoelectric semiconductor installed therein form a honeycomb structure, which is used to protect the N / P type thermoelectric semiconductor when the flexible substrate is bent and deformed;

[0008] A plurality of the N / P type thermoelectric semiconductors are connected in series in the order of NPNP, with two hot ends connected by a conductive sheet and two cold ends connected by a wire; the conductive sheet is formed by solidifying a conductive solution; among the plurality of the N / P type thermoelectric semiconductors connected in series, the hot end of the N / P type thermoelectric semiconductor at the head end is fixedly mounted with the output positive electrode, and the hot end of the N / P type thermoelectric semiconductor at the end end is fixedly mounted with the output negative electrode.

[0009] Furthermore, the shape of the wire is "Ω"-shaped, which has both flexible extension and conductive functions, and enhances the heat dissipation effect of the cold end by enhancing the heat exchange capacity with the air.

[0010] Furthermore, the conductive wire is a silver-plated copper wire.

[0011] Furthermore, the N / P type thermoelectric semiconductor is made of a rigid thermoelectric material having a high ZT value at room temperature.

[0012] Furthermore, the output positive electrode and the output negative electrode are copper sheets.

[0013] Furthermore, the flexible substrate is a rectangular parallelepiped structure as a whole;

[0014] Two N / P type thermoelectric semiconductors are installed in each hexagonal hole.

[0015] Furthermore, the formation process of the conductive sheet is as follows:

[0016] Using screen printing technology to evenly apply a conductive solution between the hot end and the hot end of the N / P type thermoelectric semiconductor;

[0017] Continue to evenly apply the conductive solution on the surface of the dried conductive solution, and repeat the application several times so that the conductive solution at the hot end has a certain thickness after solidification.

[0018] Furthermore, the conductive sheet has a serpentine structure, which enhances the tensile strength of the conductive solution after solidification.

[0019] Compared with the prior art, the technical solution of the present invention has the following beneficial effects:

[0020] 1. The honeycomb flexible temperature difference power generation sheet of the present invention adopts a flexible substrate to wrap multiple N / P type thermoelectric semiconductors, and the structure used for power generation adopts rigid N / P type thermoelectric semiconductors, which inherits the advantage of good power generation effect of rigid temperature difference power generation sheets; the introduction of honeycomb structure in the flexible substrate can reduce the stress impact on the rigid semiconductors during flexible bending, and the flexible substrate has a better protective effect on the rigid semiconductors embedded therein; compared with ordinary flexible temperature difference power generation sheets, it can have better flexibility and higher power generation effect.

[0021] 2. The cold and hot ends of the N / P type thermoelectric semiconductor of the honeycomb flexible temperature difference power generation sheet of the present invention are exposed and directly in contact with the air; the hot end is connected directly with a conductive sheet formed by a solidified conductive solution using screen printing technology; the cold end is connected with an "Ω" shaped wire; when used in wearable applications, the hot end can directly contact the heat source of the human body, reducing the heat lost by indirect heat transfer from the substrate; the cold end can make full use of the heat dissipation when the wire contacts the air, reducing the use of additional heat sinks, while having a good heat dissipation effect, further improving the temperature difference gradient that can be achieved between the cold and hot ends, thereby enhancing the power generation effect, and is more suitable for practical applications in wearable scenarios. Compared with ordinary flexible temperature difference power generation sheets, the honeycomb flexible temperature difference power generation sheet of the present invention has a better power generation effect. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] Figure 1 It is a schematic diagram of the three-dimensional structure of the honeycomb-shaped flexible temperature difference power generation sheet of the present invention;

[0023] Figure 2 It is a schematic diagram of the connection structure of N / P type thermoelectric semiconductor;

[0024] Figure 3 Schematic diagram of the hot end connection structure details of an N / P type thermoelectric semiconductor.

[0025] Among them, 1-flexible substrate, 2-N / P type thermoelectric semiconductor, 3-hexagonal hole, 4-output positive electrode, 5-output negative electrode, 6-wire, 7-conductive sheet, 21-cold end. DETAILED DESCRIPTION

[0026] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0027] like Figure 1 , Figure 2 and Figure 3 As shown in the structure, this embodiment provides a honeycomb flexible thermoelectric power generation sheet, which includes a flexible substrate 1, an N / P type thermoelectric semiconductor 2, an output positive electrode 4, an output negative electrode 5, a wire 6 and a conductive sheet 7; in this embodiment, the flexible substrate 1 as a whole and the N / P type thermoelectric semiconductor 2 are both rectangular parallelepiped structures, and two N / P type thermoelectric semiconductors 2 are installed in each hexagonal hole 3, and a total of 10 N / P type thermoelectric semiconductors 2 are used as an example for description;

[0028] A plurality of hexagonal holes 3 are spaced apart in the flexible substrate 1 to form a hollow structure. The flexible substrate 1 is solidified and formed according to the honeycomb structure, and can be formed by a flexible resin or rubber material. At least one N / P type thermoelectric semiconductor 2 is fixedly installed in each hexagonal hole 3, such as Figure 1 As shown, the hexagonal hole 3 can be a regular hexagonal hole, and the side length of the hexagonal hole 3 is the same as the width of the N / P type thermoelectric semiconductor 2 along the direction from left to right; the cold end 21 of the N / P type thermoelectric semiconductor 2 is flush with the upper end surface of the flexible substrate 1, and the hot end is flush with the lower end surface of the flexible substrate 1, so that the upper and lower end surfaces of the N / P type thermoelectric semiconductor 2 can just be exposed to the air, and the electrical connection between the cold end 21 and the hot end is also convenient; the N / P type thermoelectric semiconductor 2 is a columnar structure with a rectangular cross-section, which can be partially wrapped by the flexible substrate 1, and multiple N / P type thermoelectric semiconductors 2 are effectively fixed in the flexible substrate 1; each hexagonal hole 3 and the N / P type thermoelectric semiconductor 2 installed therein form a honeycomb structure, which is used to protect the N / P type thermoelectric semiconductor 2 when the flexible substrate 1 is bent and deformed; the N / P type thermoelectric semiconductor 2 is made of a rigid thermoelectric material with a high ZT value at room temperature, and the high thermoelectric power generation performance is fully utilized in the flexible device.

[0029] like Figure 2 and Figure 3 As shown, multiple N / P type thermoelectric semiconductors 2 are connected in series in the order of NPNP, two hot ends are connected by a conductive sheet 7, and two cold ends 21 are connected by a wire 6; the wire 6 is in the shape of "Ω", which has both flexible extension and conductive functions, and enhances the heat dissipation effect of the cold end 21 by enhancing the heat exchange capacity with the air; the "Ω" shape is a three-dimensional structure, which helps to enhance the heat exchange capacity of the wire 6 and the air convection, and enhance the heat dissipation of the cold end 21; the wire 6 can be a silver-plated copper wire, or other conductive metal wire 6, which can improve the heat dissipation capacity of the cold end 21 in a limited space. The conductive sheet 7 is formed by the solidification of the conductive solution; the conductive sheet 7 can be a serpentine structure, such as an S shape or a wavy shape, to enhance the tensile resistance of the conductive solution after solidification.

[0030] Among the multiple N / P type thermoelectric semiconductors 2 connected in series, the hot end of the N / P type thermoelectric semiconductor 2 at the head end is fixedly installed with an output positive electrode 4, and the hot end of the N / P type thermoelectric semiconductor 2 at the end end is fixedly installed with an output negative electrode 5. The output positive electrode 4 and the output negative electrode 5 are both copper sheets, which are convenient for connecting to external electrical equipment. Figure 2 and Figure 3As shown, in this embodiment, a total of 10 N / P type thermoelectric semiconductors 2 are arranged in an array in 2 rows and 5 columns to demonstrate the connection relationship. The N / P type thermoelectric semiconductors 2 at the first and last ends are both located at the rightmost ends and electrodes are fixedly installed at the hot ends, and the two electrodes are an output positive electrode 4 and an output negative electrode 5, respectively; the 5 N / P type thermoelectric semiconductors 2 in each row of N / P type thermoelectric semiconductors 2 are connected in sequence, and for the convenience of explanation, the 10 N / P type thermoelectric semiconductors 2 are named, the N / P type thermoelectric semiconductor 2 in the upper left corner is defined as the first N / P type thermoelectric semiconductor, and are sorted from left to right, the N / P type thermoelectric semiconductor 2 in the upper right corner is defined as the fifth N / P type thermoelectric semiconductor, the N / P type thermoelectric semiconductor 2 in the lower left corner is defined as the sixth N / P type thermoelectric semiconductor, and the N / P type thermoelectric semiconductor 2 in the lower right corner is defined as the tenth N / P type thermoelectric semiconductor, wherein: the fifth N / P type thermoelectric semiconductor is the N / P type thermoelectric semiconductor at the head end The tenth N / P type thermoelectric semiconductor is the terminal N / P type thermoelectric semiconductor. The cold ends 21 of the tenth N / P type thermoelectric semiconductor and the ninth N / P type thermoelectric semiconductor, the eighth N / P type thermoelectric semiconductor and the seventh N / P type thermoelectric semiconductor, the sixth N / P type thermoelectric semiconductor and the first N / P type thermoelectric semiconductor, the second N / P type thermoelectric semiconductor and the third N / P type thermoelectric semiconductor, the fourth N / P type thermoelectric semiconductor and the fifth N / P type thermoelectric semiconductor are connected through an "Ω"-shaped wire 6. The hot ends of the first N / P type thermoelectric semiconductor and the second N / P type thermoelectric semiconductor, the third N / P type thermoelectric semiconductor and the fourth N / P type thermoelectric semiconductor, the sixth N / P type thermoelectric semiconductor and the seventh N / P type thermoelectric semiconductor, the eighth N / P type thermoelectric semiconductor and the ninth N / P type thermoelectric semiconductor are all connected through a conductive sheet 7. The wire 6, the conductive sheet 7 and the N / P type thermoelectric semiconductor 2 should be in close contact to reduce thermal resistance and enhance heat dissipation and thermal conductivity.

[0031] The formation process of the above-mentioned conductive sheet 7 is: use screen printing technology to evenly apply the conductive solution on the hot end and between the hot ends of the N / P type thermoelectric semiconductor 2; continue to evenly apply the conductive solution on the surface of the conductive solution after drying, and repeat the application several times so that the conductive solution at the hot end has a certain thickness after solidification, thereby enhancing the connection stability.

[0032] The center of the hexagonal hole 3 is aligned with the center of the N / P type thermoelectric semiconductor 2, so that the honeycomb hexagonal structure can better protect the semiconductor when it is bent and deformed.

[0033] The above-mentioned honeycomb flexible temperature difference power generation sheet adopts a flexible substrate 1 to wrap multiple N / P type thermoelectric semiconductors 2, and the structure used for power generation adopts rigid N / P type thermoelectric semiconductors 2, which inherits the advantage of good power generation effect of rigid temperature difference power generation sheet; the introduction of honeycomb structure in the flexible substrate 1 can reduce the stress impact on the rigid semiconductor during flexible bending, and the flexible substrate 1 has a better protective effect on the rigid semiconductor embedded therein; compared with ordinary flexible temperature difference power generation sheets, it can have better flexibility and higher power generation effect.

[0034] The cold and hot ends of the N / P type thermoelectric semiconductor 2 of the above honeycomb flexible temperature difference power generation sheet are exposed and directly in contact with the air; the hot end is connected directly with the conductive sheet 7 formed by the solidified conductive solution using screen printing technology; the cold end 21 is connected with an "Ω"-shaped wire 6; when wearable applications are performed, the hot end can directly contact the heat source of the human body, reducing the heat lost by indirect heat transfer from the substrate; the cold end 21 can make full use of the heat dissipation when the wire 6 contacts the air, reducing the use of additional heat sinks, while having a good heat dissipation effect, further improving the temperature difference gradient that can be achieved between the cold and hot ends, thereby enhancing the power generation effect, and is more suitable for practical applications in wearable scenarios. Compared with ordinary flexible temperature difference power generation sheets, the honeycomb flexible temperature difference power generation sheet of the present invention has a better power generation effect.

[0035] Obviously, those skilled in the art can make various changes and modifications to the embodiments of the present invention without departing from the spirit and scope of the present invention. Thus, if these modifications and variations of the present invention fall within the scope of the claims of the present invention and their equivalents, the present invention is also intended to include these modifications and variations.

Claims

1. A honeycomb-shaped flexible temperature difference power generation sheet, characterized in that: It includes a flexible substrate, an N / P type thermoelectric semiconductor, an output positive electrode, an output negative electrode, a wire and a conductive sheet; The flexible substrate is provided with a plurality of hexagonal holes at intervals; the N / P type thermoelectric semiconductor is a rectangular parallelepiped structure; at least one N / P type thermoelectric semiconductor is fixedly installed in each hexagonal hole; the cold end of the N / P type thermoelectric semiconductor is flush with the upper end surface of the flexible substrate, and the hot end is flush with the lower end surface of the flexible substrate; each of the hexagonal holes and the N / P type thermoelectric semiconductor installed therein form a honeycomb structure, which is used to protect the N / P type thermoelectric semiconductor when the flexible substrate is bent and deformed; A plurality of the N / P type thermoelectric semiconductors are connected in series in the order of NPNP, with two hot ends connected by a conductive sheet and two cold ends connected by a wire; the conductive sheet is formed by solidifying a conductive solution; among the plurality of the N / P type thermoelectric semiconductors connected in series, the hot end of the N / P type thermoelectric semiconductor at the head end is fixedly mounted with the output positive electrode, and the hot end of the N / P type thermoelectric semiconductor at the end end is fixedly mounted with the output negative electrode.

2. The honeycomb-shaped flexible temperature difference power generation sheet according to claim 1, characterized in that: The conductor is in an "Ω" shape, has both flexible extension and conductive functions, and enhances the heat dissipation effect of the cold end by enhancing the heat exchange capacity with the air.

3. The honeycomb flexible temperature difference power generation sheet according to claim 2, characterized in that: The conductor is a silver-plated copper wire.

4. The honeycomb flexible temperature difference power generation sheet according to claim 1, characterized in that: The N / P type thermoelectric semiconductor is made of a rigid thermoelectric material with a high ZT value at room temperature.

5. The honeycomb-shaped flexible temperature difference power generation sheet according to claim 1, characterized in that: The output positive electrode and the output negative electrode are copper sheets.

6. The honeycomb-shaped flexible temperature difference power generation sheet according to claim 1, characterized in that: The flexible substrate is a rectangular parallelepiped structure as a whole; Two N / P type thermoelectric semiconductors are installed in each hexagonal hole.

7. The honeycomb flexible temperature difference power generation sheet according to any one of claims 1 to 6, characterized in that: The formation process of the conductive sheet is as follows: Using screen printing technology to evenly apply a conductive solution between the hot end and the hot end of the N / P type thermoelectric semiconductor; Continue to evenly apply the conductive solution on the surface of the dried conductive solution, and repeat the application several times so that the conductive solution at the hot end has a certain thickness after solidification.

8. The honeycomb flexible temperature difference power generation sheet according to any one of claims 1 to 6, characterized in that: The conductive sheet has a serpentine structure, which enhances the tensile strength of the conductive solution after solidification.

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