Thermal switch for wafer temperature regulation

Abstract

A method, system, and apparatus for substrate processing including a base, a thermal protection plate disposed over the base, the thermal protection plate including a first lift pin through hole extending from a top surface of the thermal protection plate to a bottom surface of the thermal protection plate, the base including a second lift pin through hole and a plate lift member through hole, and a plate lift member disposed over the base, the plate lifting member is configured to slidably engage the plate lifting member through hole.

Description

Technical Field

[0001] The present disclosure generally relates to semiconductor processing equipment, and more particularly to semiconductor processing equipment including a mechanism for preventing contamination of a substrate supported by a susceptor. The present disclosure also generally relates to methods of processing substrates, and more particularly to methods of preventing contamination of substrates during processing stages. Background Art

[0002] The reaction chamber can be used to deposit various material layers onto a semiconductor substrate. A semiconductor substrate, such as a silicon substrate, can be placed on a susceptor within the reaction chamber. Both the substrate and the susceptor can be heated to a desired substrate temperature set point. In an example substrate processing process, one or more reactant gases can pass through the heated substrate, causing a thin film of material to be deposited on the substrate surface. Through subsequent deposition, doping, photolithography, etching, and other processes, these layers are made into integrated circuits.

[0003] An important controlled condition during processing is the temperature of the substrate. As technology nodes continue to advance, the need to quickly regulate substrate temperature increases. Currently, temperature regulation is challenging because efforts to quickly change substrate temperature are hampered by difficulties associated with rapidly changing the temperature of large amounts of material in a chamber that radiates heat to the substrate. Summary of the invention

[0004] This summary is provided to introduce some concepts in a simplified form. These concepts are further described in detail in the detailed description of the example embodiments disclosed below. This summary is not intended to necessarily identify the key features or essential features of the claimed subject matter, nor is it intended to be used to limit the scope of the claimed subject matter.

[0005] In one aspect, a substrate processing assembly includes a susceptor, a heat protection plate disposed above the susceptor, the heat protection plate including a first lifting pin through hole extending from a top surface of the heat protection plate to a bottom surface of the heat protection plate, the susceptor including a second lifting pin through hole and a plate lifting member through hole, and a plate lifting member configured to slidably engage the plate lifting member through hole.

[0006] The apparatus may also include wherein the thermal protection plate has a surface and includes polished silicon carbide, a polished diamond-like carbon coating, an aluminum nitride layer, or a diamond-like carbon layer, or a combination thereof.

[0007] The apparatus may also include wherein the thermal protection plate further includes a plate lifting member contact on the bottom surface.

[0008] The apparatus may also include wherein the heat protection plate includes a feature extending from the bottom surface and conforming to a shape of a mating cavity in the top surface of the base.

[0009] The apparatus may also include wherein the base includes a feature extending from the top surface and conforming to a shape of a mating cavity in the thermal protection plate.

[0010] The apparatus may also include wherein the heat protection plate mounting surface is concave to limit lateral movement.

[0011] The apparatus may also include wherein the plate lifting member is connected to the actuator.

[0012] The apparatus may further include a plurality of contacts disposed on a bottom surface of the thermal protection plate, wherein one or more of the plurality of contacts are configured to couple to one or more of the plurality of plate lifting members.

[0013] The apparatus may also include wherein one or more of the plate lifting member through-holes are axially aligned with at least one of the plurality of contacts.

[0014] The apparatus may also include wherein the first lift pin through hole of the thermal protection plate is axially aligned with the second lift pin through hole of the base.

[0015] The apparatus may further include wherein the heat protection plate further includes a mounting surface, the mounting surface including a recess, the recess configured to provide circumferential support to a substrate disposed in the recess.

[0016] The apparatus may also include wherein the plate lifting member includes a mating surface at a distal end.

[0017] The apparatus may also include wherein the mating surface comprises at least one of: a roughened surface, an adhesive surface, or a fastener, or a combination thereof.

[0018] The device may also include wherein the heat protection plate mounting surface includes a top mounting surface, the top mounting surface including an inclined sidewall to limit lateral movement. Other technical features will be apparent to those skilled in the art from the following drawings, descriptions and claims.

[0019] In one aspect, a semiconductor processing method includes the steps of placing a substrate on a surface of a thermal protection plate above a susceptor in a chamber; contacting the susceptor with the thermal protection plate; exposing the substrate to a first process to heat the substrate to a first temperature; moving the thermal protection plate to a position to break contact with the susceptor; and cooling the substrate in response to breaking contact.

[0020] The method may also include where the first temperature is between about 200°C and about 600°C.

[0021] The method may further include exposing the substrate to a second process to heat the substrate to a second temperature, wherein the second temperature is lower than the first temperature. Other technical features will be apparent to those skilled in the art from the following drawings, descriptions and claims.

[0022] The apparatus may also include wherein the plate lifting member contact comprises a recess, a mating surface, a roughened surface, an adhesive surface, or a fastener, or a combination thereof.

[0023] The method may also include where the first temperature is between about 200°C and about 600°C.

[0024] The method may also include wherein the second temperature is between about 10° C. and about 200° C. Other technical features will be apparent to one skilled in the art from the following drawings, description, and claims.

[0025] In order to summarize the present disclosure and the advantages achieved relative to the prior art, certain objects and advantages of the present disclosure have been described above. Of course, it should be understood that all of these objects or advantages may not be achieved according to any specific embodiment or example of the present disclosure. Thus, for example, those skilled in the art will recognize that the examples disclosed herein can be implemented in a manner that achieves or optimizes one advantage or a group of advantages taught or suggested herein, without necessarily achieving other objects or advantages taught or suggested herein.

[0026] All of these examples are within the scope of the present disclosure.These and other embodiments will become apparent to those skilled in the art through the following detailed description of certain examples with reference to the accompanying drawings, the present disclosure not being limited to any particular examples discussed. BRIEF DESCRIPTION OF THE DRAWINGS

[0027] Although the specification concludes with claims that particularly point out and distinctly claim what are considered to be embodiments or examples of the present disclosure, advantages of examples of the present disclosure may be more readily ascertained from the description of certain examples of the present disclosure when read in conjunction with the accompanying drawings. Elements having the same element number are identical in all drawings.

[0028] Figure 1 A schematic diagram of a reactor system according to an example of the present technology is shown.

[0029] Figure 2 A schematic diagram of a reactor system having multiple reaction chambers according to an example of the present technology is shown.

[0030] Figure 3A A schematic diagram of a reactor system according to an example of the present technology is shown.

[0031] Figure 3B A schematic diagram of a reactor system according to an example of the present technology is shown.

[0032] Figure 3C A schematic diagram of a reactor system according to an example of the present technology is shown.

[0033] Figure 3DA schematic diagram of a reactor system according to an example of the present technology is shown.

[0034] Figure 4 a) to d) show schematic diagrams of components of a reactor system according to an example of the present technology.

[0035] Figure 5 A schematic diagram showing components of a reactor system according to an example of the present technique is shown.

[0036] Figure 6 A schematic diagram showing components of a reactor system according to an example of the present technique is shown.

[0037] Figure 7 A schematic diagram showing components of a reactor system according to an example of the present technique is shown.

[0038] Figure 8 A schematic diagram showing components of a reactor system according to an example of the present technique is shown.

[0039] Fig. 9 A schematic diagram showing components of a reactor system according to an example of the present technique is shown.

[0040] Fig.10 a) and b) show schematic diagrams of components of a reactor system according to an example of the present technology.

[0041] Fig.11 A processing method according to an example of the present technology is shown. DETAILED DESCRIPTION

[0042] The detailed description of each example herein refers to the accompanying drawings, which illustrate exemplary examples by way of illustration. Although these exemplary examples are described in sufficient detail to enable those skilled in the art to practice the present disclosure, it should be understood that other examples may be implemented without departing from the spirit and scope of the present disclosure, and logical, chemical and / or mechanical changes may be made. Therefore, the detailed description here is only for the purpose of illustration, not for limitation. For example, the steps described in any method or process description may be performed in any combination and / or order, and are not limited to the presented combination and / or order. In addition, one or more steps from one of the disclosed methods or processes may be combined with one or more steps from another disclosed method or process in any suitable combination and / or order. In addition, any function or step may be outsourced to one or more third parties or performed by a third party. In addition, any reference to the singular includes plural examples, and any reference to more than one component may include a singular example.

[0043] Although certain embodiments and examples are disclosed below, those skilled in the art will appreciate that the disclosure extends beyond the specifically disclosed examples and / or uses of the disclosure and obvious modifications and equivalents thereof. Therefore, it is intended that the scope of the disclosure should not be limited by the specific examples described herein.

[0044] The illustrations presented herein are not meant to be actual views of any particular material, apparatus, structure, or device, but are merely representations of examples used to describe the present disclosure.

[0045] As used herein, the term "substrate" may refer to any underlying material or materials that may be used or upon which a device, circuit, or film / layer may be formed.

[0046] As used herein, the term "atomic layer deposition" (ALD) may refer to a vapor deposition process in which a deposition cycle, preferably a plurality of consecutive deposition cycles, is performed in a processing chamber. Typically, during each cycle, a precursor is chemically adsorbed to a deposition surface (e.g., a substrate surface or a previously deposited underlying surface, such as material from a previous ALD cycle) to form a monolayer or sub-monolayer that is not easily reacted with additional precursors (i.e., a self-limiting reaction). Thereafter, if desired, a reactant (e.g., another precursor or a reactive gas) may be subsequently introduced into the processing chamber for converting the chemically adsorbed precursor into the desired material on the deposition surface. Typically, the reactant is capable of further reacting with the precursor. In addition, a purge step may also be utilized during each cycle to remove excess precursor from the processing chamber and / or excess reactant and / or reaction byproducts from the processing chamber after the chemically adsorbed precursor is converted. In addition, the term "atomic layer deposition" as used herein is also meant to include processes designated by related terms, such as "chemical vapor atomic layer deposition", "atomic layer epitaxy" (ALE), molecular beam epitaxy (MBE), gas source MBE or organometallic MBE, and chemical beam epitaxy when performed with alternating pulses of a precursor composition, a reactive gas, and a purge gas (e.g., an inert carrier gas).

[0047] As used herein, the term "chemical vapor deposition" (CVD) may refer to any process in which a substrate is exposed to one or more volatile precursors that react and / or decompose on the substrate surface to produce the desired deposit.

[0048] As used herein, the terms "layer", "film" and / or "thin film" may refer to any continuous or discontinuous structure and material deposited by the methods disclosed herein. For example, a "layer", "film" and / or "thin film" may include 2D materials, nanorods, nanotubes or nanoparticles, or even partial or complete molecular layers or partial or complete atomic layers or atomic and / or molecular clusters. A "layer", "film" and / or "thin film" may include a material or layer having pinholes, but still being at least partially continuous.

[0049] In addition, in the present disclosure, any two numbers of a variable may constitute a feasible range for the variable, and any range indicated may include or exclude endpoints. In addition, any values ​​of the variables indicated (regardless of whether they are expressed as "about") may refer to exact values ​​or approximate values, and include equivalents, and may refer to average values, median values, representative values, majority values, etc. In addition, in the present disclosure, the terms "including", "consisting of" and "having" may independently refer to "generally or broadly including", "comprising", "essentially consisting of" or "consisting of" in some examples. In the present disclosure, the meaning of any definition does not necessarily exclude the common and customary meanings in some examples.

[0050] Examples of the present disclosure may include semiconductor processing equipment and methods that may be used to process substrates within a semiconductor processing equipment. The semiconductor processing equipment may include a dual chamber module, wherein an upper chamber is configured to process one or more substrates and a lower chamber is configured to load and unload one or more substrates into and from the semiconductor processing equipment.

[0051] The transfer of the substrate between the lower chamber and the upper chamber can be achieved by using lift pins. For example, the pedestal can include a plurality of through holes, and the substrate can be placed on the pedestal during processing. Each through hole can have an associated lift pin that can move back and forth in a vertical plane between the lower chamber and the upper chamber. For example, in some embodiments, the semiconductor processing equipment can include a pedestal that includes three through holes, and the corresponding three lift pins can move up and down in unison in the vertical plane to raise and lower the substrate between the lower chamber and the upper chamber.

[0052] In one example, the inefficiencies of the above conventional techniques can be mitigated by inserting a heat protection plate with low emissivity and high thermal conductivity between the susceptor and the substrate in the processing chamber. The substrate can be positioned on the heat protection plate. To cool the substrate, the heat protection plate can be raised, and due to the low emissivity, the heat protection plate acts as a radiation shield, and the substrate will absorb the low radiation from the heater side. To heat the substrate, the heat protection plate is returned to contact the heater, and due to the high thermal conductivity of the heat protection plate, the heat protection plate can quickly absorb heat, and it acts as an excellent heat sink.

[0053] Reference now Figure 1 In various examples, the reactor system 150 may include a reaction chamber 104, a susceptor 106, and a thermal protection plate 140 to hold the substrate 130 during processing.

[0054] In one example, a plurality of lift pins 142 may be disposed below the substrate 130 and slidably engaged within through holes in the pedestal 106 and the thermal protection plate 140. The lift pins 142 may be configured to translate vertically in the direction of arrow 170 and contact the substrate 130 and lift it off the thermal protection plate 140 (e.g., to a first substrate position 144). The lift pins 142 may be further configured to lower the substrate 130 from the first substrate position 144 to rest on the thermal protection plate 140 (e.g., at a second substrate position 146).

[0055] In one example, one or more plate lifting members 154 may be disposed below the thermal protection plate 140 and slidably engaged within corresponding plate lifting member through holes 318 in the base 106. The plate lifting member 154 may be configured to translate vertically in the direction of arrow 170 and contact the thermal protection plate 140 and lift it off the base 106 (e.g., to a first substrate position). The plate lifting member 154 may be further configured to lower the thermal protection plate 140 to rest on the base 106.

[0056] In an example, the pedestal 106 can be coupled to an actuator 148 configured to translate in a vertical direction to raise and lower the pedestal 106, thermal protection plate 140, and substrate 130 within the chamber 104 during processing (eg, to contact reactants).

[0057] In one example, the reactor system 150 may include a fluid distribution system 108 (e.g., a showerhead) that distributes one or more reactants to the surface of the substrate 130, one or more reactant sources 110, 112, and / or 113, and / or a carrier gas and / or purge gas source 114 fluidly coupled to the reaction chamber 104 via corresponding lines 116, 118, 119, and 120, and corresponding valves or controllers 122, 123, 125, and 126. Reactant gases or other materials from the corresponding sources 110, 112, and / or 113 may be applied to the substrate 130 in the reaction chamber 104. Purge gas from the gas source 114 may flow to and through the reaction chamber 104 to remove any excess reactants or other undesirable substances from the reaction chamber 104. The system 150 may also include a vacuum source 128 fluidly coupled to the reaction chamber 104, which may be configured to exhaust the reactants, purge gases, or other materials from the reaction chamber 104.

[0058] Controller 152 may be configured to perform various functions and / or steps as described herein. Controller 152 may include one or more microprocessors, memory elements, and / or switching elements to perform various functions. Although illustrated as a single unit, controller 152 may alternatively include multiple devices. For example, controller 152 may be used to control airflow (e.g., by monitoring flow and controlling valves 122, 123, 125, and / or 126), lift pin 142, plate pin 154, actuator 148, various motors, heaters, cooling devices, and / or movement of vacuum source 128 (e.g., vertical translation in the direction of arrow 170) to perform various processes (e.g., Fig.11 In addition, when the system includes two or more reaction chambers, as described in more detail below, the two or more reaction chambers can be coupled to the same / shared controller.

[0059] In some examples, a reactor system (eg, reactor system 150 ) can include multiple reaction chambers.

[0060] Reference now Figure 2 For example, in the reactor system 200, a plurality of reaction chambers 204 (each reaction chamber may be Figure 1 The load lock chamber 212 and the reaction chamber 204 may be disposed around and / or coupled to a transfer chamber 280 that includes a transfer tool 285 for transferring substrates between the reaction chambers 204. The substrate may be transferred between the load lock chamber 212 and the reaction chamber 204 (e.g., via the transfer chamber 280). For example, the substrate 130 may be disposed in different chambers for different steps of a semiconductor manufacturing process (e.g., etching, oxidation, passivation, and / or deposition steps may each be performed in the same or different chambers).

[0061] Figures 3A to 3D is a schematic diagram illustrating various positions of the susceptor 106 , thermal protection plate 140 , and substrate 130 assembly 300 within the reaction chamber 104 .

[0062] Figure 3A is a schematic diagram showing a cross-sectional view of an example reaction chamber 104 including a lower chamber 314 and an upper chamber 310. The susceptor 106 is disposed in the lower chamber 314 in a lowered position, and the substrate 130 is disposed in an elevated first substrate position 144 supported by lift pins 142. The substrate 130 and the susceptor 106 may be used in these positions for loading / unloading the substrate 130 and / or for other purposes.

[0063] In an example, the bottom surface 304 of the thermal protection plate 140 may be supported on the thermal protection plate mounting surface 302 of the base 106 .

[0064] In one example, one or more lift pins 142 may be disposed below the substrate 130 and slidably engaged within corresponding lift pin through holes 306 in the base 106 and corresponding lift pin through holes 308 in the thermal protection plate 140. In one example, one or more lift pin through holes 306 in the base 106 and lift pin through holes 308 in the thermal protection plate 140 may be axially aligned so that the lift pins are slidably engaged through the lift pin through holes 308 and lift pin through holes 306. In one example, one or more lift pins 142 may be configured to fit into and / or be seated in or on a corresponding base 316.

[0065] In one example, the plate lifting member 154 may be configured to translate in a vertical plane and lift the thermal protection plate 140 off the pedestal 106. The plate lifting member 154 may be further configured to lower the thermal protection plate 140 to rest on the pedestal 106.

[0066] The plate lifting members 154 can each be slidably engaged within a corresponding plate lifting member through hole 318 extending through the base 106. The plate lifting members 154 can be made of any of a variety of materials, such as metal (e.g., stainless steel, aluminum, C22) or ceramic (e.g., SiOx, AlN, AlOx, SiC, SiN) or any other suitable material. The plate lifting members 154 can be any of a variety of shapes or sizes selected to allow the plate lifting members 154 to pass through the through hole 308.

[0067] In one example, the plate lifting member 154 can be configured to translate up and down in a vertical direction in the direction of arrow 170. Translation of the plate lifting member 154 in a vertical plane can be actuated by any of a variety of methods. For example, the plate lifting member 154 can be coupled to a corresponding lifting mechanism 322 configured to raise and lower the plate lifting member 154.

[0068] In one example, the plate lifting member 154 may include a shaft 324 that can be vertically translated in the direction of arrow 330. It should be understood that the vertical translation can be achieved, for example, by various mechanisms, such as a motor, a pneumatic actuator, a screw-driven actuator, a stepper motor, or any suitable conventional lifting mechanism 322. Those skilled in the art will further understand that the plate lifting member 154 having such a shaft 324 can be raised and lowered, or can include a telescoping portion that can raise and lower the thermal protection plate 140 and / or the substrate 130.

[0069] In one example, the plate lifting member 154 can be configured to contact the bottom surface 304 of the thermal protection plate 140. In one example, the bottom surface 304 can have one or more coupling features 320 configured to couple to the corresponding plate lifting member 154. The coupling features 320 can help adhere or otherwise connect the plate lifting member 154 to the bottom surface 304 of the thermal protection plate 140. The one or more coupling features 320 can include notches, grooves, recesses, fasteners, rough surfaces, textured surfaces, high friction material contacts, adhesives (e.g., Geckskin TM ), etc., or a combination thereof. In an example, the coupling feature 320 may include, but is not limited to, a complementary mating feature configured to mate the heat protection plate 140 to the plate lifting member 154 .

[0070] In another example, the heat protection plate 140 includes a feature 370 that extends from the bottom surface 304 and conforms to the shape of a mating cavity 371 or recess in the top surface 302 of the base 106 .

[0071] In another example, the base 106 includes a feature 372 that extends from the top surface 302 and conforms to the shape of a mating cavity 373 or recess in the heat protection plate 140 .

[0072] Figure 3B 3 is a schematic diagram showing a cross-sectional view of an example reaction chamber 104 including an upper chamber 310 and a lower chamber 314. In one example, the susceptor 106, the thermal protection plate 140, and the substrate 130 are disposed in the lower chamber 314. In one example, the actuator 148 can vertically raise the susceptor 106 in the direction of arrow 330. Figure 3B As shown, the susceptor 106 is proximate to the upper chamber 310. In one example, the substrate 130 may be lowered to the second substrate position 146, wherein the substrate 130 is disposed within the recess 326 of the thermal protection plate 140. The substrate 130 and susceptor 106 may be in these positions for a variety of reasons, such as to be transferred to the upper chamber 310 for substrate 130 processing, to cool or heat the substrate 130, to hold the substrate 130 prior to unloading and / or storing the substrate 130, and / or for other purposes.

[0073] In one example, when the actuator 148 lifts the pedestal 106, the substrate 130 can be lowered or positioned in the recess 326 of the thermal protection plate 140 because the lift pins 142 can be retracted into the pedestal through-holes 306. When the pedestal 106 is in the raised position, the lift pins 142 can remain in the pedestal 106 lift pin through-holes 306.

[0074] In an example, the heat protection plate lifting member 154 may be raised by the corresponding lifting mechanism 322 and may remain coupled to or in contact with the corresponding coupling feature 320 of the heat protection plate 140 regardless of whether the heat protection plate lifting member 154 is applying a force to the heat protection plate 140 .

[0075] Figure 3C is a schematic diagram showing a cross-sectional view of an example reaction chamber 104 including an upper chamber 310 and a lower chamber 314. In an example, the assembly 300 is arranged such that the substrate 130 is positioned in the upper chamber 310 for processing.

[0076] In one example, the substrate 130 is positioned on the thermal protection plate mounting surface 332. When the susceptor 130 moves upward in the direction of arrow 330, the substrate 130 may be positioned in the processing region 328, the fluid distribution system 108 defining an upper surface of the processing region 328.

[0077] like Figure 3C As shown, the susceptor 106 is located at or near the upper chamber 310. In one example, the actuator 148 can vertically raise the susceptor 106 to position the substrate 130 within the processing region 328. In one example, the substrate 130 is still in the second substrate position 146, wherein the substrate 130 is disposed within the recess 316 of the thermal protection plate 140.

[0078] In one example, the susceptor 106 can be configured to heat the substrate 130 to a desired processing temperature and can include one or more heating devices 336 for this purpose. The susceptor is typically configured to heat the substrate 130 to a temperature within a specific range. The design configuration of the susceptor typically depends on the operating temperature of the reactor chamber 104. For example, some susceptors may be configured to operate in a temperature range of about 200°C to about 600°C, while other susceptors may be configured to operate in a range of about 10°C to about 200°C. In some cases, it may be desirable to expose the substrate 130 within the reactor to two or more different processes running at substantially different temperatures. In this case, it may not be ideal to use the susceptor 106 at one or more different process temperatures. For example, high temperature (e.g., greater than about 200°C) processes typically use high-quality, high-power density susceptors to heat the susceptor and substrate. In contrast, lower temperature processes (e.g., below about 200°C) typically employ high-quality, low-power density susceptors, but in both cases, the quality of the heater is high due to the desire to maintain a constant temperature setting.

[0079] Furthermore, if the susceptor is used for processes that run at significantly different temperatures, heating and / or cooling the susceptor from one process temperature to another process temperature may require an undesirably long time. To overcome this conventional shortcoming, the thermal protection plate 140 may be separated from the susceptor 106 to enable faster cooling of the substrate 130 during processing and / or at other advantageous times.

[0080] Figure 3D is a schematic diagram showing a cross-sectional view of an example reaction chamber 104 including an upper chamber 310 and a lower chamber 314. In an example, the assembly 300 is arranged such that the substrate 130 is positioned in the upper chamber 310 for processing.

[0081] In one example, the susceptor 106 and / or other components in the chamber 104 can heat the substrate 130 during processing. It may be desirable to quickly cool the substrate 130 during processing (e.g., between processing steps with different processing temperatures). To enable cooling of the substrate 130, the thermal protection plate 140 can be separated from the susceptor 106 during processing and / or at other advantageous times.

[0082] In one example, the plate lifting member 154 may be triggered to translate vertically, thereby lifting the thermal protection plate 140 upwardly off the base 106 .

[0083] In one example, the thermal protection plate 140 may include a low emissivity material. Therefore, even a small distance 338 (e.g., about 2.0 mm-15.0 mm) separation between the thermal protection plate 140 and the base 106 may suppress radiative heat transfer from the base 106 to the substrate 130, thereby increasing the cooling rate of the substrate 130. Because the thermal protection plate 140 is highly thermally conductive, when the thermal protection plate 140 is in contact with the base 106, it does not substantially interfere with the heat transfer from the base 106 to the substrate 130. Therefore, coupling the thermal protection plate 140 to the base 106 and removing the thermal protection plate 140 from the base 106 can be used as a switch to quickly change the temperature of the substrate 130.

[0084] The heat protection plate 140 may include a material with high thermal conductivity and low emissivity to improve heat conduction while shielding the substrate 130 from radiation.

[0085] In one example, the substrate 103 may be located within the recess 326 and may contact a portion of the thermal protection plate mounting surface (see Figure 4 ). Such contact of the substrate 130 with the high thermal conductivity material may further improve cooling of the substrate 130 by dissipating heat from the substrate 130 to the thermal protection plate 140 .

[0086] Figure 41 and 2 show example variations of the thermal protection plate in cross-sectional views. In one example, in FIG. a), the thermal protection plate 140 may include a substantially flat substrate mounting surface 400 and a recess 326 in which the substrate 130 may be disposed. The wall 408 of the recess 326 may limit lateral movement of the substrate 130 by providing circumferential support around the periphery of the substrate 130 disposed in the recess 326.

[0087] In one example, in FIG. b), the thermal protection plate 404 may include a substantially flat substrate mounting surface 406 without a recess 326 in which the substrate 130 may be disposed. This configuration may rely on a vacuum or pressure differential with the chamber to prevent lateral displacement of the substrate 130 on the thermal protection plate 404.

[0088] In one example, in FIG. c), the heat protection plate 420 may include a curved or concave substrate mounting surface 410, within which the substrate 130 may be disposed. The wall 412 may limit lateral movement of the substrate 130 by providing circumferential support around the periphery of the substrate 130.

[0089] In one example, in FIG. d), the heat protection plate 440 may include a substantially flat substrate mounting surface 442 and a recess 444 in which the substrate 130 may be disposed. The recess 444 wall 446 may include beveled edges, such as chamfered surfaces, angles, and / or chamfered edges, etc. The wall 446 may limit lateral movement of the substrate 130 by providing circumferential support around the perimeter of the substrate 130 disposed in the recess 444. Other heat protection plate shapes, surfaces, recesses, and walls are also possible, and the claimed subject matter is not limited thereto.

[0090] Figure 5 An example of the base 106 is shown in plan view. In an example, the base 106 can include one or more through holes to accommodate one or more lift pins 142. The lift pin through holes 306 are distributed around the surface 500.

[0091] In an example, the base 106 may include one or more plate lifting member through holes 318 to accommodate the plate lifting member 154 .

[0092] Figure 6 An example of the heat protection plate 140 is shown in plan view. In an example, the heat protection plate 140 may include one or more through holes to accommodate one or more lift pins. The lift pin through holes 308 are distributed around the bottom surface 304.

[0093] In one example, the plate lifting member 154 (see Figure 1) can be configured to contact the bottom surface 304 of the thermal protection plate 140. In one example, the bottom surface 304 can have one or more coupling features 320 configured to couple to a corresponding plate lifting member 154. The coupling features 320 can help adhere or otherwise connect the plate lifting member 154 to the bottom surface 304 of the thermal protection plate 140.

[0094] In an example, the one or more coupling features 320 may be axially aligned with the plate lifting member through-holes 318 in the base 106 .

[0095] In some examples, the thermal protection plate 140 may include a material having high thermal conductivity and / or low emissivity to improve cooling through heat conduction while protecting a substrate (eg, substrate 130 ) from radiation (radiant heat).

[0096] In one example, the thermal protection plate 140 may include a silicon carbide plate, wherein one or more surfaces of the thermal protection plate 140 are polished silicon carbide surfaces. For example, at least the bottom surface 304 may have a polished silicon carbide surface. In other examples, additional surfaces of the thermal protection plate 140 may include polished silicon carbide surfaces. Such a material may have a thermal conductivity of about >120 W / (mK) and an emissivity of about 0.2-0.6.

[0097] In another example, the thermal protection plate 140 may include a polished aluminum plate, wherein one or more surfaces of the thermal protection plate 140 are polished aluminum. For example, at least the bottom surface 304 may be polished aluminum. Such a material may have a thermal conductivity of about >240 W / (mK) and an emissivity of about 0.09-0.24. It should be appreciated that the thermal conductivity and emissivity of the polished surface depend on the surface finish, oxidation and temperature, material composition, and processing. Other types of polished surfaces are known to those skilled in the art and may be used in accordance with the present disclosure, and the claimed subject matter is not limited thereto.

[0098] In an example, a thin coating with high thermal conductivity and low emissivity on the heat protection plate 140 on the bottom surface 304 may be used to further improve the performance of the heat protection plate 140 .

[0099] In one example, AlN (aluminum nitride) may be used to coat the bottom surface 304 of the heat protection plate 140. AlN coatings exhibit low emissivity, typically in the range of about 0.2 to 0.6, and have a thermal conductivity of about 60-320 W / (mK).

[0100] In one example, DLC (diamond-like coating) can be used to coat the bottom surface 304 of the thermal protection plate 140. DLC exhibits low emissivity, typically falling within the range of about 0.1 to 0.3, and has a thermal conductivity of about 400-1000 W / (mK). Other types of coatings are known to those skilled in the art and can be used in accordance with the current disclosure, and the claimed subject matter is not limited thereto.

[0101] Figure 7 An example of an assembly 700 is shown that includes the base 106 and the thermal protection plate 140. In an example, one or more lift pin through holes 306 can be aligned with one or more lift pin through holes 308. One or more lift pin through holes 306 can be axially aligned with corresponding one or more lift pin through holes 308 along one or more axes 702, 704, and / or 706.

[0102] Figure 8 An example of an assembly 800 is shown that includes the base 106 and the thermal protection plate 140. In an example, one or more plate lifting member through-holes 318 can be aligned with one or more coupling features 320. One or more plate lifting member through-holes 318 can be axially aligned with corresponding one or more coupling features 320 along one or more axes 802, 804, and / or 806.

[0103] Fig. 9 An example of a plate lifting member 154 having a coupling feature 902 at the end of the plate lifting member 154 is shown. In an example, the plate lifting member 154 can be configured to contact the bottom surface 304 of the thermal protection plate 140. In an example, the plate lifting member 154 can have one or more coupling features 902 configured to couple to corresponding coupling features 320 that can help adhere or otherwise connect the plate lifting member 154 to the bottom surface 304 of the thermal protection plate 140. The one or more coupling features 902 can include mating shapes, recesses, notches, fasteners, rough surfaces, textured surfaces, high friction material contacts, adhesives (e.g., Geckskin TM ), etc., or a combination thereof. In an example, the coupling feature 902 may include, but is not limited to, a complementary mating feature configured to mate the heat protection plate 140 to the plate lifting member 154 .

[0104] Fig.10 a) and b) in Figure 3 show examples of various lifting mechanisms. Figure 1-9The plate lifting member 154 described. In another example, in FIG. b), the lifting actuator 1002 may include one or more plate lifting members 154 coupled to a plate 1012. The plate 1012 may be of any shape, such as a circle or a triangle. The plate 1012 may be coupled to a motor and a shaft 1024 (optionally disposed at the center or one side of the plate 1012), which may translate vertically in the direction of arrow 330 (see Figure 3A ). The plate 1012 may be hollow and may be mounted around the lift pin so as not to interfere with the function of the lift pin 142. The plate 1012 may be solid.

[0105] Fig.11 is a method for cooling the substrate 130 (see Figure 3A ) is a flow chart of a method 1100 of . The method 1100 includes the steps of placing a substrate 130 on a surface of a thermal protection plate 140 above a pedestal 106 within a chamber 104 (step 1102), bringing the pedestal 106 into contact with the thermal protection plate 140 (step 1104), exposing the substrate 130 to a first process, heating the substrate 130 to a first temperature (step 1106), and moving the thermal protection plate 140 to a position that breaks contact with the pedestal 106 (step 1108). Breaking the contact allows the substrate 130 to cool to a temperature below the first temperature. The cooling is caused by the protection from radiant heat provided by the thermal protection plate 140. The method 1100 continues by exposing the substrate 130 to a second process, heating the substrate 130 to a second temperature (step 1110), wherein the second temperature is lower than the first temperature.

[0106] According to exemplary aspects of these embodiments, the first process and the second process can be operated at different temperatures. For example, the first process can be operated at a temperature of about 200°C to about 600°C; the second process can be performed at, for example, 10°C to about 200°C. In addition or alternatively, the substrate can be exposed to different reactants or inert gases during the first and second processes. And, as described above, the gas flow pattern can vary for the first and second processes. One or more of these changes can be made to distinguish the first process from the second process. The first and second processes can be processes of the same (e.g., deposition) or different (e.g., cleaning, deposition) types.

[0107] Although exemplary examples of the present disclosure are described herein, it should be understood that the present disclosure is not limited thereto. Various modifications, changes and enhancements may be made to the systems and methods described herein without departing from the spirit and scope of the present disclosure.

[0108] The subject matter of the present disclosure includes all novel and nonobvious combinations and subcombinations of the various systems, components and configurations, and other features, functions, acts, and / or properties disclosed herein, as well as any and all equivalents thereof.

Claims

1. A substrate processing assembly comprising: Pedestal; a heat protection plate disposed above the base, the heat protection plate comprising a first lift pin through hole extending from a top surface of the heat protection plate to a bottom surface of the heat protection plate; The base includes a second lifting pin through hole and a plate lifting member through hole; as well as A board lifting member is configured to slidably engage the board lifting member through-hole.

2. The substrate processing assembly according to claim 1, wherein: The heat protection plate has a surface including polished silicon carbide, a polished diamond-like carbon coating, an aluminum nitride layer, or a diamond-like carbon layer, or a combination thereof.

3. The substrate processing assembly according to claim 1, wherein: The heat protection plate also includes a plate lifting member contact on the bottom surface.

4. The substrate processing assembly according to claim 3, wherein: The panel lifting member contact point includes a recess, a mating surface, a roughened surface, an adhesive surface or a fastener, or a combination thereof.

5. The substrate processing assembly according to claim 1, wherein: The heat protection plate includes a feature extending from the bottom surface and conforming to the shape of a mating cavity in the base top surface.

6. The substrate processing assembly according to claim 1, wherein: The base includes a feature extending from the top surface and conforming to the shape of a mating cavity in the heat protection plate.

7. The substrate processing assembly according to claim 1, wherein: The heat protection plate mounting surface is concave to limit lateral movement.

8. The substrate processing assembly of claim 1, wherein: The plate lifting member is coupled to an actuator.

9. The substrate processing assembly of claim 1, further comprising a plurality of contacts disposed on a bottom surface of the thermal protection plate, wherein: One or more of the plurality of contacts are configured to couple to one or more of the plurality of panel lifting members.

10. The substrate processing assembly of claim 1, wherein: One or more of the plate lifting member through-holes are axially aligned with at least one of the plurality of contacts.

11. The substrate processing assembly of claim 1, wherein: The first lift pin through hole of the heat protection plate is axially aligned with the second lift pin through hole of the base.

12. The substrate processing assembly of claim 1, wherein: The heat protection plate also includes a mounting surface including a recess configured to provide circumferential support to a substrate disposed in the recess.

13. The substrate processing assembly of claim 1, wherein: The plate lifting member includes a mating surface at a distal end.

14. The substrate processing assembly of claim 13, wherein: The mating surface includes at least one of: a roughened surface, an adhesive surface, or a fastener, or a combination thereof.

15. The substrate processing assembly of claim 1, wherein: The heat protection plate mounting surface includes a top mounting surface including sloped sidewalls to limit lateral movement.

16. A semiconductor processing method comprising: placing the substrate on a surface of a thermal protection plate above a susceptor in the chamber; Bring the base into contact with the thermal protection plate; exposing the substrate to a first process to heat the substrate to a first temperature; Move the thermal protection plate to a position where it breaks contact with the base; as well as The substrate is cooled in response to breaking the contact.

17. The method according to claim 16, wherein: The first temperature is between about 200°C and about 600°C.

18. The method of claim 16, further comprising exposing the substrate to a second process to heat the substrate to a second temperature, wherein the second temperature is lower than the first temperature.

19. The method according to claim 18, wherein: The first temperature is between about 200°C and about 600°C.

20. The method according to claim 19, wherein: The second temperature is between about 10°C and about 200°C.

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