Device and method for removing crystals from growth crucible

Abstract

The invention provides an apparatus and a method for removing crystals from a growth crucible. The method comprises the following steps: inverting the growth crucible; the growth crucible is heated, so that the surface of the crystal growing in the growth crucible is melted, and the crystal is separated from the growth crucible. According to the method provided by the invention, the crystal can be safely and effectively separated from the growth crucible on the premise that the structure of the crucible is not damaged.

Description

Technical Field

[0001] The present invention relates to the field of crystals, and in particular to a device and method for taking out crystals from a growth crucible. Background Art

[0002] In recent years, the descent method, as an emerging crystal growth technology, especially for gallium oxide crystals, has gradually attracted widespread attention in the industry. This technology has become a candidate to replace the guided mold method due to its significant advantages in reducing costs and improving the yield rate. However, in the actual application of the descent method, the crucible is one of the key equipment for crystal growth, and the high material cost and high processing cost have become important factors restricting the development of the technology.

[0003] Although the descent method has shown great potential in crystal growth, after the crystal growth is completed, the crucible needs to be destroyed to remove the crystal. Therefore, the remaining crucible needs to be re-melted, plastic processed and welded, which is not only time-consuming but also greatly increases the cost of the crucible.

[0004] At present, the crucible materials widely used in the industry mainly include precious metal alloys such as iridium (Ir), platinum-iridium (Pt-Ir) and platinum-rhodium (Pt-Rh). Taking a 4-inch inner diameter platinum-iridium (Pt-Ir) crucible as an example, when the thickness of the crucible is 1mm, its weight can reach 800g. The cost of making such a crucible is about 400,000 yuan, of which the processing cost is between 15% and 20%. After the crystal growth is completed, the traditional method is to peel off the crystal by destroying the crucible and take it out. Then, the remaining crucible material is melted and processed into a new crucible through a series of processes. The processing cost of this process is about 60,000 to 80,000 yuan, which greatly increases the overall cost of crystal growth.

[0005] Only by solving the problem of high cost of secondary processing of crucibles can we play an important role in the commercial application of crystals.

[0006] The contents of the background technology section are merely the technologies known to the inventors and do not necessarily represent the prior art in the field. Summary of the invention

[0007] The first object of the present invention is to achieve safe and effective separation of crystals from a crucible without destroying the structure of the crucible.

[0008] The second purpose of the present invention is to ensure that the integrity and quality of the crystal are maintained during the crystal removal process to avoid damage and contamination.

[0009] In order to achieve at least one of the above objectives, a first aspect of the present invention provides a device for removing a crystal from a growth crucible, comprising:

[0010] The body, the inner wall of which is provided with heat-insulating material;

[0011] A heating mechanism is located inside the body and has a heating space inside;

[0012] A heat insulation mechanism is located inside the body and below the heating mechanism, and has a heat insulation space inside;

[0013] A lifting mechanism with a weighing component and a crystal receiving platform; and

[0014] A temperature measuring mechanism is located inside the body;

[0015] Wherein, the weighing component can measure the weight of the load on the surface of the crystal receiving platform, and the temperature measuring mechanism can measure the temperature of the growth crucible;

[0016] When the growth crucible in which the crystal is grown is inverted on the heat-insulating mechanism so that the growth crucible is located in the heating space, the crystal receiving platform can rise into the growth crucible, and the heating mechanism can heat up the heating space, thereby causing the surface of the crystal grown in the growth crucible to melt and then fall to the crystal receiving platform;

[0017] After the crystal falls onto the crystal receiving platform, the crystal receiving platform can descend into the heat-insulating space.

[0018] In some embodiments of the present invention, the device further comprises:

[0019] A residual crystal receiver, when the crystal is taken out from the device and the residual crystal receiver is placed on the crystal receiving platform, the heating space can be heated again by the heating mechanism, so that the residual crystals in the growth crucible are all melted and then fall into the residual crystal receiver.

[0020] In some embodiments of the present invention, the crystal receiving platform is provided with a sensor;

[0021] When the crystal receiving platform rises and enters the interior of the growth crucible, the sensor can measure the distance between the surface of the crystal receiving platform and the crystal inside the growth crucible.

[0022] In some embodiments of the present invention, the device further comprises a control system for controlling the heating temperature of the heating mechanism, and controlling the height and lifting speed of the lifting mechanism according to data of the weighing component and the temperature measuring mechanism.

[0023] In some embodiments of the present invention, the thermal insulation material and the thermal insulation mechanism respectively include alumina ceramic materials;

[0024] The heating mechanism is an induction coil;

[0025] The temperature measuring mechanism is an infrared thermometer.

[0026] A second aspect of the present invention provides a method for removing a crystal from a growth crucible, comprising:

[0027] inverting the growth crucible;

[0028] The growth crucible is heated so that the surface of the crystal grown in the growth crucible is melted and separated from the growth crucible.

[0029] In some embodiments of the present invention, the method further comprises:

[0030] After the crystal is taken out from the growth crucible, the growth crucible is heated again so that the residual crystal in the growth crucible is completely melted, thereby being discharged from the growth crucible.

[0031] In some embodiments of the present invention, heating the growth crucible comprises:

[0032] The temperature in the growth crucible is rapidly raised to above the melting point of the crystal, and then the heating rate is controlled at 20-50° C. / s.

[0033] In some embodiments of the present invention, the method further comprises:

[0034] Lifting a crystal receiving platform that can be raised and lowered and can measure the surface load weight into the inverted growth crucible, so that the crystal separated from the growth crucible falls onto the crystal receiving platform; and

[0035] By monitoring the surface load weight of the crystal receiving platform, the speed at which the crystal receiving platform descends from the growth crucible and the temperature at which the growth crucible is heated are controlled.

[0036] In some embodiments of the present invention, the method further comprises:

[0037] Before heating the growth crucible, the distance between the crystal receiving platform and the crystal in the growth crucible is controlled to be 1-10 mm.

[0038] Additional aspects and advantages of the present invention will be given in part in the following description and in part will be obvious from the following description, or will be learned through practice of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS

[0039] The embodiments of the present invention are described in detail below in conjunction with the accompanying drawings. Here, the drawings constituting a part of the present disclosure are used to provide a further understanding of the present invention. The illustrative embodiments of the present disclosure and their descriptions are used to explain the present disclosure and do not constitute an improper limitation of the present disclosure.

[0040] Figure 1 It is a schematic structural diagram of a device for taking out a crystal from a growth crucible provided by one embodiment of the present invention.

[0041] Figure 2 The present invention is a process flow chart of a method for removing a crystal from a growth crucible provided by one embodiment of the present invention. DETAILED DESCRIPTION

[0042] In the following, only some exemplary embodiments are briefly described. As those skilled in the art will appreciate, the described embodiments may be modified in various ways without departing from the spirit or scope of the present application. Therefore, the drawings and descriptions are considered to be exemplary and non-restrictive in nature.

[0043] In the description of the present application, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise" and the like indicate positions or positional relationships based on the positions or positional relationships shown in the accompanying drawings, which are only for the convenience of describing the present application and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the present application. In addition, the terms "first" and "second" are only used for descriptive purposes, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, the features defined as "first" and "second" may explicitly or implicitly include one or more of the features. In the description of the present application, the meaning of "multiple" is two or more, unless otherwise clearly and specifically defined.

[0044] In the description of this application, it should be noted that, unless otherwise clearly specified and limited, the terms "installed", "connected", and "connected" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection, an electrical connection, or can communicate with each other; it can be directly connected, or indirectly connected through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements. For ordinary technicians in this field, the specific meanings of the above terms in this application can be understood according to specific circumstances.

[0045] In the present application, unless otherwise clearly specified and limited, a first feature being "above" or "below" a second feature may include that the first and second features are in direct contact, or may include that the first and second features are not in direct contact but are in contact through another feature between them. Moreover, a first feature being "above", "above" and "above" a second feature includes that the first feature is directly above and obliquely above the second feature, or simply means that the first feature is higher in level than the second feature. A first feature being "below", "below" and "below" a second feature includes that the first feature is directly above and obliquely above the second feature, or simply means that the first feature is lower in level than the second feature.

[0046] The disclosure below provides many different embodiments or examples to realize the different structures of the present application. In order to simplify the disclosure of the present application, the parts and settings of specific examples are described below. Of course, they are only examples, and the purpose is not to limit the present application. In addition, the present application can repeat reference numbers and / or reference letters in different examples, and this repetition is for the purpose of simplification and clarity, which itself does not indicate the relationship between the various embodiments and / or settings discussed. In addition, the various specific processes and material examples provided by the present application, but those of ordinary skill in the art can appreciate the application of other processes and / or the use of other materials.

[0047] The preferred embodiments of the present application are described below in conjunction with the accompanying drawings. It should be understood that the preferred embodiments described herein are only used to illustrate and explain the present application and are not used to limit the present application.

[0048] Figure 1 FIG. 1 shows a device 100 for removing a crystal A from a growth crucible provided by an embodiment of the present invention. Figure 1 As shown, the device 100 includes a body 110, a heating mechanism 120, a heat insulating mechanism 130, a lifting mechanism 140, and a temperature measuring mechanism 150. The device 100 provided by the present invention is particularly suitable for a growth crucible for growing crystals by a descending method.

[0049] Optionally, the body 110 is a metal furnace cover, which is sleeved on the outside of other components. The inner wall of the body 110 is provided with a heat insulating material 111 to prevent the internal heat from dissipating. Optionally, the heat insulating material 111 is selected from alumina ceramic material.

[0050] The heating mechanism 120 is arranged inside the body 110, and a heating space is provided inside the heating mechanism 120. The heating space is used to heat the growth crucible 20 on which the crystal A (in this embodiment, a gallium oxide crystal) is grown, so the size of the internal space thereof needs to adapt to the outer diameter and height of the growth crucible 20. Optionally, the heating mechanism 120 is an induction coil. The induction coil can be designed to surround the outside of the growth crucible 20. When the induction heating system is started, the coil generates an alternating magnetic field, and the growth crucible 20 is quickly heated by the principle of electromagnetic induction.

[0051] The heat insulating mechanism 130 is disposed inside the body 110 and below the heating mechanism 120, and a heat insulating space is provided inside the heat insulating mechanism 130. The heat insulating space is used to cool the crystal A taken out from the growth crucible 20. The lifting mechanism 140 can move up and down in the heat insulating space and enter or exit the heating space, so the size of the heat insulating mechanism 130 needs to match the size of the lifting mechanism 140. Optionally, the material of the heat insulating mechanism 130 is selected from alumina ceramic material.

[0052] Figure 1 In the illustrated embodiment, the heat insulation mechanism 130 includes a first heat insulation board 131 and a second heat insulation board 132 located below the first heat insulation board. The first heat insulation board 131 and the second heat insulation board 132 are connected by a heat insulation material. The heat insulation space is located between the first heat insulation board 131 and the second heat insulation board 132. In other embodiments of the present invention, the heat insulation mechanism 130 may be an integral mechanism, and the interior is hollowed out to form a heat insulation space.

[0053] The lifting mechanism 140 is used to smoothly lower and take out the crystal A after heating the crystal A in the growth crucible 20 to a predetermined temperature. The lifting mechanism 140 is provided with a weighing component (not shown in the figure) and a crystal receiving platform 141. The weighing component can measure the weight of the load on the surface of the crystal receiving platform 141 (the top surface shown in the figure). The crystal receiving platform 141 is used to receive the crystal A dropped from the growth crucible 20. In order to ensure that the crystal A will not be subjected to a large mechanical impact during the removal process, the distance between the crystal receiving platform 141 and the crystal in the crucible can be controlled to be no more than 10 mm. When the weight measured by the weighing sensing device is greater than a certain value (it can be set to 20g for a 2-inch crystal), the descending platform starts to start, and the descending speed can be controlled between 1-10mm / s. The crystal receiving platform 141 is made of a material that is easy to separate from the crystal A and will not destroy the crystal structure, such as an alumina fiber material.

[0054] The temperature measuring mechanism 150 is located inside the body 110 and is used to measure the temperature of the growth crucible 20 . Figure 1In the illustrated embodiment, the temperature measuring mechanism 150 is an infrared temperature measuring device, which can accurately measure the temperature change of the growth crucible 20 by contacting the infrared rays for temperature measurement with the bottom of the growth crucible 20, thereby reflecting the temperature of the growth crucible 20 in real time.

[0055] like Figure 1 As shown, when the growth crucible 20 with crystal A grown thereon is inverted on the first insulation plate 131 so that the growth crucible 20 is located in the heating space, the crystal receiving platform 141 can rise into the interior of the growth crucible 20, and the heating mechanism 120 can heat up the heating space, thereby causing the surface of the crystal A grown in the growth crucible 20 to melt and then fall to the crystal receiving platform 141.

[0056] After the crystal A falls onto the crystal receiving platform 141, the crystal receiving platform 141 can be lowered into the heat-insulating space, and then the device 100 is taken out after being sufficiently cooled in the heat-insulating space.

[0057] The present invention places a growth crucible containing crystals upside down in a heating environment, and quickly heats a thin layer of crystals in contact with the crucible wall to a critical temperature. At this time, the crystals are quickly separated from the growth crucible under the action of gravity. After the separated crystals contact with a crystal receiving platform, the lifting mechanism is controlled to move the separated crystals out of the heating space, thereby obtaining complete crystals.

[0058] The above device can achieve safe and effective separation of crystals from the growth crucible without destroying the crucible structure, and in the process of taking out the crystals, the integrity and quality of the crystals are maintained, thereby avoiding damage and contamination of the crystals.

[0059] Optionally, the device 100 further includes a residual crystal receiver (not shown in the figure). When the crystal A is taken out from the device 100 and the residual crystal receiver is placed on the crystal receiving platform 141, the heating space can be heated again by the heating mechanism 120, so that all the residual crystals in the growth crucible 20 are melted and then fall into the residual crystal receiver. In this way, the growth crucible 20 can be cleaned, and the growth crucible 20 can be reused, thereby reducing production costs. Optionally, the residual crystal receiver is an alumina crucible.

[0060] Optionally, the crystal receiving platform 141 is provided with a sensor (not shown in the figure). Before the crystal A is separated from the growth crucible 20 by heating, when the crystal receiving platform 141 rises and enters the growth crucible, the sensor can measure the distance between the surface of the crystal receiving platform 141 and the crystal A inside the growth crucible 20. In this way, it is ensured that before the crystal A is separated from the growth crucible 20, the rising crystal receiving platform 141 will not destroy the crystal structure and can be as close to the crystal A as possible, thereby ensuring that the falling distance of the crystal after the crystal is separated from the growth crucible 20 is as small as possible, preventing the crystal A from generating a large impact force when falling, and protecting the integrity of the crystal.

[0061] Optionally, the device 100 further includes a control system (not shown in the figure). The control system is used to control the heating temperature of the heating mechanism 120 and control the height and lifting speed of the lifting mechanism 140 according to the data of the weighing component and the temperature measuring mechanism 150 .

[0062] The heating mechanism 120 is connected to the control system to ensure that the temperature data can be fed back in real time and automatically adjusted. The control system can adjust the heating mechanism 120, such as the frequency and intensity of the current of the induction coil, so as to achieve fine control of the heating process. For example, when the crystal A reaches a predetermined temperature range, the control system will control the heating mechanism 120 to reduce the power to prevent the crystal A from overheating.

[0063] The lifting mechanism 140 is connected to the control system to ensure the automation and accuracy of the entire removal process. By controlling the speed and height of the crystal receiving platform 141, it can be ensured that the crystal A will not be subjected to mechanical stress during the removal process, thereby avoiding damage to the crystal A. For example, the weighing component measures that the weight of the surface load of the crystal receiving platform 141 becomes larger, indicating that the crystal A has been separated from the growth crucible 20. The control system controls the lifting mechanism 140 to slowly and steadily lower the crystal receiving platform 141 to avoid impact during the movement of the crystal A, and controls the heating mechanism 120 to avoid excessive melting of the crystal A, ensuring that the crystal A will not be excessively melted or deformed due to excessive temperature during the heating process.

[0064] The temperature measuring mechanism 150 is connected to the control system to ensure that the temperature data of the growth crucible 20 can be fed back in real time and automatically adjusted. When the growth crucible 20 reaches a predetermined temperature range, the control system controls the heating mechanism 120 to reduce power to prevent the crystal A from overheating.

[0065] Through the control system, the accuracy and repeatability of the entire crystal removal process can be confirmed.

[0066] Figure 2 A method for removing a crystal from a growth crucible provided by an embodiment of the present invention is shown, comprising steps S11 and S12:

[0067] S11: Turn the growth crucible upside down;

[0068] S12: The growth crucible is heated to melt the surface of the crystal grown in the growth crucible, thereby separating from the growth crucible.

[0069] The above method can achieve safe and effective separation of the crystal from the growth crucible without destroying the crucible structure.

[0070] Optionally, the temperature in the growth crucible is rapidly raised to above the melting point of the crystal, and then the heating rate is controlled at 20-50°C / s. Further optionally, in order to prevent excessive melting or deformation of the crystal, the temperature in the growth crucible is rapidly raised to the critical temperature of crystal melting. For example, for gallium oxide crystals, the temperature in the growth crucible can be rapidly raised to about 1810-1820°C. Optionally, the time for rapid heating is less than or equal to 15s to avoid excessive melting of the crystal, which is beneficial to maintaining the integrity of the crystal. The slower the heating time, the greater the damage (melting) to the crystal.

[0071] The subsequent heating speed is slowed down to about 20-50℃ / s, which can prevent the crystal from excessively melting or deforming due to over-high temperature during the heating process.

[0072] Optionally, the method further comprises: after the crystal is taken out of the growth crucible, heating the growth crucible again to melt all the residual crystals in the growth crucible, thereby discharging the growth crucible. In this way, the growth crucible can be cleaned, and the growth crucible can be reused, thereby reducing production costs.

[0073] Optionally, for gallium oxide crystals, the predetermined temperature for reheating is about 1800-1810° C. For a growth crucible with an inner diameter of 1 inch, the time for heating to the predetermined temperature may be 10-15 minutes; for a growth crucible with an inner diameter of 2 inches, the time for heating to the predetermined temperature may be 15-20 minutes. Slow heating is conducive to completely melting all residual crystals.

[0074] After heating to a predetermined temperature, the temperature may be maintained for a certain period of time so that all residual crystals are melted. Optionally, for a growth crucible with an inner diameter of 1 inch, the temperature maintenance time may be 15-30 minutes; for a growth crucible with an inner diameter of 2 inches, the temperature maintenance time may be 30-60 minutes.

[0075] Optionally, the above method further includes:

[0076] Lifting a crystal receiving platform that can be raised and lowered and can measure the weight of the surface load into the inverted growth crucible, so that the crystal separated from the growth crucible falls onto the crystal receiving platform; and

[0077] By monitoring the surface load weight of the crystal receiving platform, the speed at which the crystal receiving platform descends from the growth crucible and the temperature at which the growth crucible is heated are controlled.

[0078] By using a crystal receiving platform that can be lifted and lowered and whose surface load weight can be measured to move the separated crystal out of the heating space, the integrity and quality of the crystal can be maintained during the crystal removal process, and damage and contamination of the crystal can be avoided. Figure 1 The crystal receiving platform 141 of the device 100 is shown.

[0079] By controlling the descending speed of the crystal receiving platform and the temperature of heating the growth crucible, the crystal can be prevented from being impacted during movement and from melting too much, ensuring that the crystal will not melt excessively or deform due to excessively high temperature during heating.

[0080] Before removing the crystal from the crystal receiving platform, the crystal must be cooled to a suitable temperature to avoid contamination when removing it while hot. For a gallium oxide crystal with a diameter of 1 inch, the cooling time can be 30-60 minutes; for a 2-inch diameter, the cooling time can be 1-2 hours.

[0081] Optionally, before heating the growth crucible, the distance between the crystal receiving platform and the crystal in the growth crucible is controlled to be 1-10 mm. Within this range, it can be ensured that the crystal receiving platform does not collide with the crystal to prevent the crystal structure from being destroyed, and the distance between the crystal receiving platform and the crystal can be made close enough, so that the falling distance of the crystal after separation from the growth crucible is as small as possible, thereby preventing the crystal from being impacted when falling and protecting the crystal.

[0082] In practical applications, the device and method provided by the present invention are not only suitable for removing gallium oxide crystals, but can also adapt to the removal requirements of different types of crystals by adjusting the control system, thereby greatly expanding the application scope and market potential of the present invention.

[0083] When using a residual crystal receiver, sensor and control system Figure 1 When the apparatus 100 shown is used to take out the gallium oxide crystal from the growth crucible, the following steps can be performed:

[0084] The growth crucible 20 with the gallium oxide crystal A grown is placed upside down on the first heat insulation board 131, and the control system is started. The control system controls the lifting mechanism 140 to rise into the heating space, so that the crystal receiving platform 141 is raised into the growth crucible 20, and the distance between the crystal receiving platform 141 and the gallium oxide crystal A is controlled by the sensor to be 1-10mm. The control system starts the heating mechanism 120, and through frequency and power control, the temperature in the crucible 20 is quickly raised to 1810-1820℃ within 15s, and then the heating rate is controlled to be 20-50℃ / s. The temperature in the growth crucible 20 is measured by the temperature measuring mechanism 150.

[0085] The control system monitors the data of the weighing component. When the weighing component measures that the crystal receiving platform 141 becomes larger (indicating that the gallium oxide crystal A is separated from the growth crucible 20), the control system controls the crystal receiving platform 141 to descend. When the data of the weighing component begins to decrease, the control system speeds up the descending rate of the crystal receiving platform 141 and reduces the heating rate of the heating mechanism 120 or keeps it at a constant temperature. When the gallium oxide crystal A leaves the growth crucible 20, the control system turns off the heating mechanism 120.

[0086] When the crystal receiving platform 141 descends to the insulation space between the first insulation plate 131 and the second insulation plate 132 , the gallium oxide crystal stays there for a period of time to reduce its temperature to 200-300° C., or below 200° C., and then the gallium oxide crystal is taken out from the device 100 .

[0087] Then, a residual crystal receiver is placed on the crystal receiving platform 141, and the crystal receiving platform 141 is raised to be close to the first heat insulation board 131, but not beyond the first heat insulation board 131. The heating mechanism 120 is started again, so that the temperature in the growth crucible 20 is slowly raised to about 1800-1810°C, and then kept warm for a certain period of time, so that the residual crystals in the growth crucible 20 are completely melted and flow into the residual crystal receiver, so that the growth crucible 20 is cleaned.

[0088] The present invention simplifies the crystal removal process, reduces the repeated processing of the crucible, shortens the production cycle, and reduces the production cost. In the process of removing the crystal, the present invention can effectively protect the integrity and quality of the crystal, and avoid the crystal from being damaged or contaminated during the removal process. The present invention also has good operability and applicability, thereby improving the efficiency of the entire production process. In summary, the present invention has obvious advantages in reducing costs, ensuring crystal quality, and improving efficiency.

[0089] The present invention will be described below with reference to specific embodiments. The process condition values ​​taken in the following embodiments and comparative examples are exemplary, and their possible numerical ranges are as shown in the aforementioned summary of the invention. For process parameters not particularly noted, conventional techniques can be used. Unless otherwise specified, reagents and instruments used in the technical scheme provided by the present invention can be purchased from conventional channels or the market. It should be noted that, in the absence of conflict, the features in the embodiments in this application and the embodiments can be combined with each other.

[0090] Example 1

[0091] This embodiment uses a residual crystal receiver, sensor and control system Figure 1 The device 100 shown takes out the gallium oxide crystal A from the growth crucible, and the specific steps are as follows:

[0092] Place the metal crucible with an inner diameter of 1 inch on which the gallium oxide crystal A is grown upside down on the first heat insulation board 131 inside the body 110, control the crystal receiving platform 141 to rise until the distance from the gallium oxide crystal A in the growth crucible 20 is about 5 mm, and then close the furnace door. Start the heating mechanism 120 to heat, so that the temperature of the growth crucible 20 reaches 1810°C from room temperature within 10 seconds, at which time the gallium oxide crystal A begins to separate from the growth crucible 20 under the action of gravity. The weighing device feeds back the weight change on the crystal receiving platform 141 in real time, and controls the descending speed through the control system to ensure that the gallium oxide crystal A always remains in a stable state during the separation process. When the gallium oxide crystal A is completely separated from the growth crucible 20, turn off the heating mechanism 120. The gallium oxide crystal A descends to the heat insulation space between the first heat insulation board 131 and the second heat insulation board 132, stays for 30 minutes, and then takes out the gallium oxide crystal A. Next, an alumina crucible with an inner diameter of about 30 mm is placed on the crystal receiving platform 141, and then raised to the lower part of the growth crucible 20 (the distance from the first heat insulation board 131 is 10 mm), and the heating mechanism 120 is started again, and the heating power is controlled. The crucible temperature is heated to 1810° C. in 60 minutes, and it stays at this temperature for 30 minutes, and then the heating mechanism 120 is turned off, and the alumina crucible on the platform is taken out after the crystal receiving platform 141 is lowered. Finally, the growth crucible 20 is taken out from the top, and the process is completed.

[0093] Example 2

[0094] This embodiment uses a residual crystal receiver, sensor and control system Figure 1 The device 100 shown takes out the gallium oxide crystal A from the growth crucible, and the specific steps are as follows:

[0095] The metal crucible with an inner diameter of 1 inch on which the gallium oxide crystal A is grown is placed upside down on the first heat insulation board 131 inside the body 110, and the crystal receiving platform 141 is controlled to rise until the distance from the gallium oxide crystal A in the growth crucible 20 is about 8 mm, and then the furnace door is closed. The heating mechanism 120 is started to heat, so that the temperature of the growth crucible 20 reaches 1820°C from room temperature within 15 seconds, and then the gallium oxide crystal A begins to separate from the growth crucible 20 under the action of gravity. The weighing device feeds back the weight change on the crystal receiving platform 141 in real time, and controls the descending speed through the control system to ensure that the gallium oxide crystal A always maintains a stable state during the separation process. When the gallium oxide crystal A is completely separated from the growth crucible 20, the heating mechanism 120 is turned off. The gallium oxide crystal A descends to the heat insulation space between the first heat insulation board 131 and the second heat insulation board 132, stays for 45 minutes, and then the gallium oxide crystal A is taken out. Next, an alumina crucible with an inner diameter of about 30 mm is placed on the crystal receiving platform 141, and then raised to the lower part of the growth crucible 20 (the distance from the first heat insulation board 131 is 10 mm), and the heating mechanism 120 is started again, and the heating power is controlled. The crucible temperature is heated to 1805°C in 60 minutes, and it stays at this temperature for 30 minutes, and then the heating mechanism 120 is turned off, and the alumina crucible on the platform is taken out after the crystal receiving platform 141 is lowered. Finally, the growth crucible 20 is taken out from the top, and the process is completed.

[0096] Example 3

[0097] This embodiment uses a residual crystal receiver, sensor and control system Figure 1 The device 100 shown takes out the gallium oxide crystal A from the growth crucible, and the specific steps are as follows:

[0098] Place the metal crucible with an inner diameter of 1 inch on which the gallium oxide crystal A is grown upside down on the first heat insulation board 131 inside the body 110, control the crystal receiving platform 141 to rise until the distance from the gallium oxide crystal A in the growth crucible 20 is about 6 mm, and then close the furnace door. Start the heating mechanism 120 to heat, so that the temperature of the growth crucible 20 reaches 1815°C from room temperature within 15 seconds, at which time the gallium oxide crystal A begins to separate from the growth crucible 20 under the action of gravity. The weighing device feeds back the weight change on the crystal receiving platform 141 in real time, and controls the descending speed through the control system to ensure that the gallium oxide crystal A always remains in a stable state during the separation process. When the gallium oxide crystal A is completely separated from the growth crucible 20, turn off the heating mechanism 120. The gallium oxide crystal A descends to the heat insulation space between the first heat insulation board 131 and the second heat insulation board 132, stays for 45 minutes, and then takes out the gallium oxide crystal A. Next, an alumina crucible with an inner diameter of about 30 mm is placed on the crystal receiving platform 141, and then raised to the lower part of the growth crucible 20 (the distance from the first heat insulation board 131 is 10 mm), and the heating mechanism 120 is started again, and the heating power is controlled. The crucible temperature is heated to 1805°C in 60 minutes, and it stays at this temperature for 20 minutes, and then the heating mechanism 120 is turned off, and the alumina crucible on the platform is taken out after the crystal receiving platform 141 is lowered. Finally, the growth crucible 20 is taken out from the top, and the process is completed.

[0099] Example 4

[0100] This embodiment uses a residual crystal receiver, sensor and control system Figure 1 The device 100 shown takes out the gallium oxide crystal A from the growth crucible, and the specific steps are as follows:

[0101] A metal crucible with an inner diameter of 2 inches on which gallium oxide crystal A is grown is placed upside down on the first heat insulation board 131 inside the body 110, and the crystal receiving platform 141 is controlled to rise until the distance from the gallium oxide crystal A in the growth crucible 20 is about 5 mm, and then the furnace door is closed. The heating mechanism 120 is started to heat, so that the temperature of the growth crucible 20 reaches 1815°C from room temperature within 15 seconds, and then the gallium oxide crystal A begins to separate from the growth crucible 20 under the action of gravity. The weighing device feeds back the weight change on the crystal receiving platform 141 in real time, and controls the descending speed through the control system to ensure that the gallium oxide crystal A always remains in a stable state during the separation process. When the gallium oxide crystal A is completely separated from the growth crucible 20, the heating mechanism 120 is turned off. The gallium oxide crystal A descends to the heat insulation space between the first heat insulation board 131 and the second heat insulation board 132, stays for 60 minutes, and then the gallium oxide crystal A is taken out. Next, an alumina crucible with an inner diameter of about 60 mm is placed on the crystal receiving platform 141, and then raised to the lower part of the growth crucible 20 (the distance from the first heat insulation board 131 is 10 mm), and the heating mechanism 120 is started again, and the heating power is controlled. The crucible temperature is heated to 1810° C. in 60 minutes, and it stays at this temperature for 1 hour, and then the heating mechanism 120 is turned off, and the alumina crucible on the platform is taken out after the crystal receiving platform 141 is lowered. Finally, the growth crucible 20 is taken out from the top, and the process is completed.

[0102] Example 5

[0103] This embodiment uses a residual crystal receiver, sensor and control system Figure 1 The device 100 shown takes out the gallium oxide crystal A from the growth crucible, and the specific steps are as follows:

[0104] Place the metal crucible with an inner diameter of 2 inches on which the gallium oxide crystal A is grown upside down on the first heat insulation board 131 inside the body 110, control the crystal receiving platform 141 to rise until the distance from the gallium oxide crystal A in the growth crucible 20 is about 5 mm, and then close the furnace door. Start the heating mechanism 120 to heat, so that the temperature of the growth crucible 20 reaches 1820°C from room temperature within 80 seconds, at which time the gallium oxide crystal A begins to separate from the growth crucible 20 under the action of gravity. The weighing device feeds back the weight change on the crystal receiving platform 141 in real time, and controls the descending speed through the control system to ensure that the gallium oxide crystal A always remains in a stable state during the separation process. When the gallium oxide crystal A is completely separated from the growth crucible 20, turn off the heating mechanism 120. The gallium oxide crystal A descends to the insulation space between the first insulation board 131 and the second insulation board 132, stays there for 1.5 hours, then takes out the gallium oxide crystal A, and then places an alumina crucible with an inner diameter of about 60 mm on the crystal receiving platform 141, and then rises to the lower part of the growth crucible 20 (the distance from the first insulation board 131 is 10 mm), and starts the heating mechanism 120 again, controls the heating power, and heats the crucible temperature to 1805°C in 50 minutes, stays there for 2 hours, and then turns off the heating mechanism 120, and takes out the alumina crucible on the platform after the crystal receiving platform 141 descends. Finally, take out the growth crucible 20 from the top, and the process ends.

[0105] Comparative Example 1

[0106] The difference between this comparative example and Example 1 is that the heating mechanism 120 is started to heat, so that the temperature of the growth crucible 20 increases from room temperature to 1790° C. within 45 seconds, and is kept at this temperature for 30 minutes. The gallium oxide crystal A cannot be taken out.

[0107] Comparative Example 2

[0108] The difference between this comparative example and Example 2 is that the heating mechanism 120 is started to heat, so that the temperature of the growth crucible 20 rises from room temperature to 1820° C. in about 5 minutes. Although the gallium oxide crystal A is taken out, the integrity of the crystal is damaged to a certain extent because it is kept at high temperature for too long.

[0109] The above description is only an example embodiment of the present disclosure and is not intended to limit the present disclosure. Although the present disclosure is described in detail with reference to the aforementioned embodiments, those skilled in the art can still modify the technical solutions described in the aforementioned embodiments or replace some of the technical features therein by equivalents. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present disclosure shall be included in the protection scope of the present disclosure.

Claims

1. A device for removing a crystal from a growth crucible, characterized in that include: The main body has an inner wall provided with heat-insulating material; A heating mechanism is located inside the body and has a heating space inside; A heat insulation mechanism is located inside the body and below the heating mechanism, and has a heat insulation space inside; Lifting mechanism, equipped with weighing components and crystal receiving platform; as well as A temperature measuring mechanism is located inside the body; Wherein, the weighing component can measure the weight of the load on the surface of the crystal receiving platform, and the temperature measuring mechanism can measure the temperature of the growth crucible; When the growth crucible in which the crystal is grown is inverted on the heat-insulating mechanism so that the growth crucible is located in the heating space, the crystal receiving platform can rise into the growth crucible, and the heating mechanism can heat up the heating space, thereby causing the surface of the crystal grown in the growth crucible to melt and then fall to the crystal receiving platform; After the crystal falls onto the crystal receiving platform, the crystal receiving platform can descend into the heat-insulating space.

2. The device according to claim 1, characterized in that Also includes: A residual crystal receiver, when the crystal is taken out from the device and the residual crystal receiver is placed on the crystal receiving platform, the heating space can be heated again by the heating mechanism, so that the residual crystals in the growth crucible are all melted and then fall into the residual crystal receiver.

3. The device according to claim 1, characterized in that The crystal receiving platform is provided with a sensor; When the crystal receiving platform rises and enters the interior of the growth crucible, the sensor can measure the distance between the surface of the crystal receiving platform and the crystal inside the growth crucible.

4. The device according to claim 1, characterized in that It also includes a control system for controlling the heating temperature of the heating mechanism, and controlling the height and lifting speed of the lifting mechanism according to data from the weighing component and the temperature measuring mechanism.

5. The device according to claim 1, characterized in that The thermal insulation material and the thermal insulation mechanism respectively include alumina ceramic materials; The heating mechanism is an induction coil; The temperature measuring mechanism is an infrared thermometer.

6. A method for removing a crystal from a growth crucible, characterized in that include: inverting the growth crucible; The growth crucible is heated so that the surface of the crystal grown in the growth crucible is melted and separated from the growth crucible.

7. The method according to claim 6, characterized in that Also includes: After the crystal is taken out from the growth crucible, the growth crucible is heated again so that the residual crystal in the growth crucible is completely melted, thereby being discharged from the growth crucible.

8. The method according to claim 6, characterized in that Heating the growth crucible comprises: The temperature in the growth crucible is rapidly raised to above the melting point of the crystal, and then the heating rate is controlled at 20-50° C. / s.

9. The method according to claim 6, characterized in that Also includes: Lifting a crystal receiving platform that can be raised and lowered and can measure the surface load weight into the inverted growth crucible, so that the crystal separated from the growth crucible falls onto the crystal receiving platform; and By monitoring the surface load weight of the crystal receiving platform, the speed at which the crystal receiving platform descends from the growth crucible and the temperature at which the growth crucible is heated are controlled.

10. The method according to claim 9, characterized in that Also includes: Before heating the growth crucible, the distance between the crystal receiving platform and the crystal in the growth crucible is controlled to be 1-10 mm.

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