Method and Device for Optimizing On-Resistance of Silicon Carbide MOSFET

Abstract

The present invention relates to the technical field of the on-resistance of MISFETs, and discloses a method and device for optimizing the on-resistance of a silicon carbide MOSFET. The present invention continuously collects the working environment and circuit performance data of a target MOSFET to generate working data, analyzes the performance safety of the MOSFET based on the working data to obtain performance safety characteristics, and based on the performance safety characteristics, analyzes and determines the gate voltage adjustment characteristics and cooling system adjustment characteristics that meet the safety characteristics. According to the adjustment characteristics, the gate voltage and cooling system of the target MOSFET are adjusted to achieve on-resistance optimization. The present invention effectively reduces the on-resistance of the MOSFET by optimizing the gate voltage and cooling system. During the optimization process, the electrical and thermal stability of the MOSFET is maintained. By balancing the gate voltage increase and the control of the cooling system, it is ensured that the MOSFET is in an optimal state of on-resistance optimization and loss control, solving the problem in the prior art of insufficient control over the balance between gate voltage and cooling during the on-resistance optimization of MOSFETs.

Description

Technical Field

[0001] The present invention relates to the technical field of the on-resistance of MISFETs, and particularly to a method and device for optimizing the on-resistance of a silicon carbide MOSFET. Background Art

[0002] Due to its excellent high-temperature, high-frequency, and high-efficiency characteristics, silicon carbide MOSFETs are widely used in power electronics and high-performance electrical systems. The on-resistance of MOSFETs directly affects performance indicators such as the power loss, efficiency, and thermal management of devices. Therefore, optimizing the on-resistance of MOSFETs is an important issue in the application of MOSFETs.

[0003] In the prior art, the optimization of the on-resistance of MOSFETs mainly includes the optimization of the design structure and the optimization of the working environment. In terms of the optimization of the working environment, increasing the gate voltage of the MOSFET and reducing the working temperature of the MOSFET can both optimize the on-resistance of the MOSFET. However, increasing the gate voltage of the MOOSFET will, to a certain extent, cause an increase in its own working temperature, thereby reversely reducing the optimization effect of the on-resistance brought about by increasing the gate voltage. At the same time, it will also cause loss of the device life of the MOSFET, and increasing the cooling performance of the cooling control system will bring greater cooling energy consumption. In the current technology, it is difficult to achieve a balanced optimization of the on-resistance of MOSFETs in all aspects. Summary of the Invention

[0004] The purpose of the present invention is to provide a method and device for optimizing the on-resistance of a silicon carbide MOSFET, aiming to solve the problem of insufficient balance between the gate voltage and the cooling control when optimizing the on-resistance of MOSFETs in the prior art.

[0005] The present invention is implemented as follows. In the first aspect, the present invention provides a method for optimizing the on-resistance of a silicon carbide MOSFET, including:

[0006] Continuously collecting parameters of the working environment and circuit performance of the target MOSFET to obtain the working data of the target MOSFET, and analyzing and processing the performance and safety of the target MOSFET according to the working data to obtain the performance and safety characteristics of the target MOSFET;

[0007] Adjusting and analyzing the gate voltage and the cooling system of the target MOSFET according to the performance and safety characteristics to obtain the gate voltage adjustment characteristics and the cooling system adjustment characteristics that conform to the performance and safety characteristics;

[0008] Adjust the gate voltage and the cooling system of the target MOSFET according to the gate voltage adjustment feature and the cooling system adjustment feature, so as to optimize the on-resistance of the target MOSFET.

[0009] In a second aspect, the present invention provides a device for optimizing the on-resistance of a silicon carbide MOSFET, which is used to implement the method for optimizing the on-resistance of a silicon carbide MOSFET according to any one of the first aspect.

[0010] The present invention provides a method for optimizing the on-resistance of a silicon carbide MOSFET, which has the following beneficial effects:

[0011] The present invention continuously collects the working environment and circuit performance data of the target MOSFET to generate working data, analyzes the performance and safety of the MOSFET based on the working data to obtain performance and safety features, analyzes and determines the gate voltage adjustment feature and the cooling system adjustment feature that meet the safety features based on the performance and safety features, and adjusts the gate voltage and the cooling system of the target MOSFET according to the adjustment features to optimize the on-resistance. By optimizing the gate voltage and the cooling system, the present invention effectively reduces the on-resistance of the MOSFET and improves the circuit efficiency. During the optimization process, the electrical and thermal stability of the MOSFET is maintained. By balancing the gate voltage increase and the cooling system control, the MOSFET is ensured to be in the optimal state of on-resistance optimization and loss control, solving the problem of insufficient balance between gate voltage and cooling control when optimizing the on-resistance of the MOSFET in the prior art. Description of the Drawings

[0012] Figure 1 It is a schematic diagram of the steps of a method for optimizing the on-resistance of a silicon carbide MOSFET provided by an embodiment of the present invention. Detailed Embodiments

[0013] In order to make the objectives, technical solutions and advantages of the present invention clearer, the present invention will be further described in detail below with reference to the drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present invention and are not used to limit the present invention.

[0014] The implementation of the present invention will be described in detail below with reference to specific embodiments.

[0015] Refer to Figure 1 as shown, which is a preferred embodiment provided by the present invention.

[0016] In a first aspect, the present invention provides a method for optimizing the on-resistance of a silicon carbide MOSFET, including:

[0017] S1: Continuously collect the parameters of the working environment and circuit performance of the target MOSFET to obtain the working data of the target MOSFET, and perform analysis and processing on the performance and safety of the target MOSFET based on the working data to obtain the performance and safety characteristics of the target MOSFET;

[0018] S2: Perform adjustment analysis on the gate voltage and cooling system of the target MOSFET according to the performance and safety characteristics to obtain the gate voltage adjustment characteristics and cooling system adjustment characteristics that meet the performance and safety characteristics;

[0019] S3: Perform adjustment processing on the gate voltage and cooling system of the target MOSFET according to the gate voltage adjustment characteristics and the cooling system adjustment characteristics to optimize the on-resistance of the target MOSFET.

[0020] Specifically, in step S1 of the embodiment provided by the present invention, install sensors and data acquisition devices (such as current sensors, voltage sensors, temperature sensors, etc.) in the circuit to ensure that all sensors and data acquisition devices are calibrated to accurately reflect the actual working conditions, continuously monitor and record the working parameters of the MOSFET, such as drain current, drain voltage, gate voltage, junction temperature, etc., and store the collected data regularly or continuously to ensure the integrity and continuity of the data.

[0021] More specifically, analyze the data collected over a long period of time, identify the trends and patterns of parameter changes, evaluate the thermal performance of the MOSFET under different working conditions, identify overheating risks, evaluate the impact of current and voltage stresses on the performance of the MOSFET, identify overcurrent and overvoltage risks, predict possible fault points and times based on historical data and trend analysis, determine the safe operating area of the MOSFET according to the analysis results, including the safe ranges of temperature, current, and voltage, extract key characteristic parameters reflecting the performance and safety of the MOSFET, such as the maximum allowable junction temperature, maximum current density, etc., comprehensively evaluate all analysis results to form a characteristic set describing the performance and safety of the MOSFET, and verify the accuracy and reliability of the performance and safety characteristics through experiments to ensure their effectiveness for the actual working conditions.

[0022] It can be understood that through continuous monitoring and analysis, potential failures of the MOSFET can be detected and prevented in a timely manner, the reliability of the system can be improved, the performance and safety characteristics obtained through analysis can guide circuit design and MOSFET selection, optimize the overall circuit performance, reduce power consumption, and improve the energy efficiency of the system by optimizing working parameters and conditions.

[0023] Specifically, in step S2 of the embodiment provided by the present invention, the performance safety characteristics of the MOSFET are obtained from the previous analysis, including the maximum allowable junction temperature, the optimal operating voltage range, etc., the current gate voltage setting and the operating state of the cooling system are evaluated, and the reference data is recorded.

[0024] More specifically, according to the performance safety characteristics, a safe gate voltage range is set, the gate voltage is adjusted with different step values within the set range, the performance parameters of the MOSFET at each voltage (such as drain current, power consumption, temperature, etc.) are tested, the performance data at each voltage point is recorded, the influence of different voltages on the performance of the MOSFET is analyzed, the optimal gate voltage is found, and a gate voltage adjustment strategy is formulated to ensure that the gate voltage can be in the best state under different working conditions.

[0025] More specifically, the cooling efficiency of the current cooling system and the thermal response of the MOSFET are analyzed, the change of the junction temperature of the MOSFET under different cooling intensities is tested, the cooling effect is recorded, and according to the test results, the parameters of the cooling system (such as fan speed, coolant flow rate, etc.) are optimized to ensure that the MOSFET can also be maintained within the safe temperature range under high load, and an intelligent cooling system control strategy based on real-time temperature monitoring is developed to dynamically adjust the cooling intensity to adapt to the load change.

[0026] More specifically, after adjusting the gate voltage and the cooling system, a system-level joint test is carried out to verify the synergistic effect of the two. Through a series of tests, it is verified whether the adjusted system meets the requirements of the performance safety characteristics, ensuring the stability and safety of the MOSFET under different working conditions. According to the test feedback, the parameters of the gate voltage and the cooling system are further fine-tuned to reach the best state.

[0027] It can be understood that by precisely adjusting the gate voltage, the switching efficiency of the MOSFET can be maximally improved, the power consumption can be reduced, the overall circuit performance can be enhanced, the optimized cooling system can more effectively control the temperature, prevent overheating, ensure the stability of the MOSFET under high-efficiency working conditions, keep the gate voltage within the optimal range, and avoid device losses and failures caused by voltage fluctuations.

[0028] It should be noted that both the increase of the gate voltage and the decrease of the working environment temperature can optimize the on-resistance of the MOSFET, but the increase of the gate voltage will cause the rise of the working environment temperature of the MOSFET, which in turn causes the deterioration of the on-resistance. Therefore, it is necessary to find the most balanced node, apply the increase of the gate voltage and the control of the cooling system to the MOSFET, so as to realize the optimization of the on-resistance of the MOSFET and the energy consumption control of the cooling system.

[0029] Specifically, in step S3 of the embodiment provided by the present invention, clarify the performance safety characteristics of the target MOSFET, including the maximum junction temperature, the optimal operating voltage range, the on-resistance, etc., record the current gate voltage and the initial settings of the cooling system, measure and record the initial on-resistance value, set the gate voltage adjustment range according to the performance characteristics, adjust the gate voltage step by step within the set range, record the on-resistance values at each voltage point, analyze the change of the on-resistance under different gate voltages, identify the gate voltage point that makes the on-resistance the smallest, determine the optimal gate voltage and make fine adjustments to ensure its stability in the actual working environment.

[0030] More specifically, test the cooling effect of the current cooling system, record the operating temperature of the MOSFET, test the temperature and on-resistance of the MOSFET under different cooling intensities by adjusting parameters such as the cooling fan speed and the coolant flow rate, analyze the relationship between the cooling effect and the on-resistance, determine the optimal cooling intensity to minimize the on-resistance, design and implement a dynamic cooling control strategy based on real-time temperature monitoring to ensure the best cooling effect under different load conditions.

[0031] More specifically, after adjusting the optimal gate voltage and the cooling system, conduct a joint test to ensure that the synergistic effect of the two reaches the best effect. Through a series of tests, verify the on-resistance, temperature and stability of the adjusted system under actual working conditions. According to the test results and the actual usage, further fine-tune the gate voltage and the cooling system to ensure the stability and reliability of the optimization effect.

[0032] It can be understood that by precisely adjusting the gate voltage, the on-resistance of the MOSFET is minimized, thereby improving the current transmission efficiency. Through effective cooling measures, the operating temperature of the MOSFET is controlled within the optimal range, further reducing the on-resistance. The optimized on-resistance reduces the power consumption and improves the energy efficiency of the overall system. The reduction of the on-resistance improves the switching performance of the MOSFET and significantly improves the overall system performance. The adjustment based on actual data is more accurate than the traditional empirical adjustment, ensuring the stability and sustainability of the optimization effect.

[0033] The present invention provides a method for optimizing the on-resistance of a silicon carbide MOSFET, which has the following beneficial effects:

[0034] The present invention continuously collects the working environment and circuit performance data of the target MOSFET to generate working data, analyzes the performance and safety of the MOSFET based on the working data to obtain performance and safety characteristics, and based on the performance and safety characteristics, analyzes and determines the gate voltage adjustment characteristics and cooling system adjustment characteristics that meet the safety characteristics. According to the adjustment characteristics, the gate voltage and cooling system of the target MOSFET are adjusted to achieve optimized on-resistance. By optimizing the gate voltage and cooling system, the present invention effectively reduces the on-resistance of the MOSFET, improves the circuit efficiency, and maintains the electrical and thermal stability of the MOSFET during the optimization process. By balancing the gate voltage increase and the control of the cooling system, the MOSFET is ensured to be in the optimal state of on-resistance optimization and loss control, solving the problem in the prior art of insufficient balance in grasping the gate voltage and cooling control during the on-resistance optimization of the MOSFET.

[0035] Preferably, the steps of continuously collecting the parameters of the working environment and circuit performance of the target MOSFET to obtain the working data of the target MOSFET and analyzing and processing the performance and safety of the target MOSFET based on the working data to obtain the performance and safety characteristics of the target MOSFET include:

[0036] S11: Continuously collect the parameters of the working environment of the target MOSFET to obtain the working environment data of the target MOSFET; wherein, the working environment data includes ambient temperature data and cooling system data;

[0037] S12: Continuously collect the parameters of the circuit performance of the target MOSFET to obtain the circuit performance data of the target MOSFET; wherein, the circuit performance data includes voltage data and current data;

[0038] S13: Analyze the temperature safety of the target MOSFET based on the working environment data to obtain the temperature safety characteristics of the target MOSFET;

[0039] S14: Analyze the circuit parameter safety of the target MOSFET based on the circuit performance data to obtain the circuit safety characteristics of the target MOSFET;

[0040] S15: Combine and process the temperature safety characteristics and the circuit safety characteristics to obtain the performance and safety characteristics of the target MOSFET.

[0041] Specifically, a temperature sensor is used to continuously collect the temperature data of the environment where the target MOSFET is located, and record the working state and parameters of the cooling system, such as the rotation speed of the cooling fan, the flow rate of the coolant, etc.

[0042] More specifically, a voltage sensor is used to monitor and record the input and output voltages of the target MOSFET, and a current sensor is used to monitor and record the input and output currents of the target MOSFET. The ambient temperature data and the cooling system data are integrated to analyze the operating temperature of the target MOSFET under different ambient temperatures and cooling conditions.

[0043] More specifically, by analyzing the temperature data, the operating temperature range of the target MOSFET and its impact on performance are determined. According to the temperature characteristics of the target MOSFET, its safety at different temperatures is evaluated, and the risk points that may cause overheating are identified.

[0044] More specifically, the voltage data and the current data are integrated to analyze the operating performance of the target MOSFET under different voltage and current conditions. By analyzing the voltage and current data, the circuit parameter range of the target MOSFET and its impact on performance are determined. According to the circuit characteristics of the target MOSFET, its safety under different voltage and current conditions is evaluated, and the risk points that may cause overvoltage or overcurrent are identified.

[0045] More specifically, the temperature safety characteristics and the circuit safety characteristics are comprehensively analyzed to evaluate their interactive effects. Through comprehensive analysis, the performance safety characteristics of the target MOSFET are extracted, including its stability and safety under different operating conditions. Based on the comprehensive performance safety characteristics, potential risk points are identified, and optimization suggestions are proposed to improve the safety and reliability of the target MOSFET.

[0046] It can be understood that by analyzing multi-dimensional data such as ambient temperature, cooling system, voltage, and current, the safety of the target MOSFET is comprehensively evaluated. Through data-driven analysis, the risk points that may cause the failure of the target MOSFET are accurately identified. According to the safety analysis results, the operating conditions of the target MOSFET can be further optimized, such as adjusting the gate voltage or improving the cooling system, to ensure its operation in the best state.

[0047] Preferably, the steps of performing a temperature safety analysis on the target MOSFET according to the working environment data to obtain the temperature safety characteristics of the target MOSFET include:

[0048] S131: Analyze the characteristics of the temporal variation of the ambient temperature data to obtain the temperature variation characteristics of the target MOSFET;

[0049] S132: Extract and process the representative data of the ambient temperature data to obtain the stable temperature characteristics of the target MOSFET;

[0050] S133: Perform a calculation process on the temperature control effect of the target MOSFET based on the data of the temperature reduction system to obtain the theoretical temperature reduction effect of the target MOSFET corresponding to the data of the temperature reduction system;

[0051] S134: Perform a feedback analysis on the safety performance of the temperature change characteristics and the stable temperature characteristics based on the theoretical temperature reduction effect to obtain the temperature safety characteristics of the target MOSFET.

[0052] Specifically, use a temperature sensor to collect ambient temperature data in real time to form a time series data set, perform smoothing processing on the ambient temperature data to remove noise, and extract the change trend and periodic characteristics of the ambient temperature through time series analysis methods (such as moving average, difference method, etc.), and analyze the temperature change of the target MOSFET in different time periods, including the maximum temperature, minimum temperature, and temperature fluctuation range.

[0053] More specifically, extract representative temperature points from the ambient temperature data, such as average temperature, peak temperature, valley temperature, etc., use a clustering analysis method (such as K-means) to classify the temperature data, identify different types of temperature states, and extract the temperature characteristics of the target MOSFET in a stable operating state, including the common operating temperature range and the temperature distribution during long-term operation.

[0054] More specifically, collect and integrate the working data of the temperature reduction system (such as cooling fan speed, coolant flow rate, ambient wind speed, etc.), establish a heat exchange model between the MOSFET and the temperature reduction system based on the theory of heat conduction and heat radiation, and obtain the theoretical temperature reduction effect under different temperature reduction system parameters through numerical simulation and theoretical calculation.

[0055] More specifically, analyze the temperature change and temperature characteristics without the cooling effect based on the theoretical temperature reduction effect for the actual temperature change characteristics and the stable temperature characteristics, so as to obtain the temperature change characteristics and the stable temperature characteristics of the target MOSFET without the cooling effect of the temperature reduction system, and perform a safety performance analysis on the target MOSFET based on the temperature change characteristics and the stable temperature characteristics of the target MOSFET without the cooling effect of the temperature reduction system. The result of the analysis is the temperature safety characteristic, which is used to evaluate the safety risk of the target MOSFET under different ambient temperatures and cooling conditions.

[0056] It can be understood that by collecting and analyzing ambient temperature data in real time, the accurate monitoring of the temperature change of the target MOSFET is realized, and the temperature safety performance of the target MOSFET is evaluated from multiple dimensions by comprehensively analyzing the temperature change characteristics, stable temperature characteristics, and temperature reduction effect.

[0057] Preferably, the steps of performing a safety analysis on the circuit parameters of the target MOSFET according to the circuit performance data to obtain the circuit safety characteristics of the target MOSFET include:

[0058] S141: Perform a stability analysis on the voltage data to obtain the voltage stability characteristics of the target MOSFET;

[0059] S142: Perform a stability analysis on the current data to obtain the current stability characteristics of the target MOSFET;

[0060] S143: Perform a correlation analysis on the voltage data and the current data to obtain the circuit correlation characteristics of the target MOSFET;

[0061] S144: Perform an independent evaluation and weighted comprehensive analysis on the voltage stability characteristics, current stability characteristics and circuit correlation characteristics of the target MOSFET to obtain the circuit safety characteristics of the target MOSFET.

[0062] Specifically, use a high-precision voltage sensor to collect the voltage data of the MOSFET in real time, and preprocess the collected voltage data, including denoising, filtering and normalization processing. Evaluate the stability of the voltage data through statistical analysis (such as standard deviation, variance, mean) and time series analysis (such as autocorrelation function, spectrum analysis), and finally obtain the voltage fluctuation range, change trend and stability index (such as voltage ripple, transient response characteristics).

[0063] More specifically, use a high-precision current sensor to collect the current data of the MOSFET in real time, and preprocess the collected current data, including denoising, filtering and normalization processing. Evaluate the stability of the current data through statistical analysis (such as standard deviation, variance, mean) and time series analysis (such as autocorrelation function, spectrum analysis), and finally obtain the current fluctuation range, change trend and stability index (such as current ripple, transient response characteristics).

[0064] More specifically, synchronously collect voltage and current data to ensure time alignment, and use methods such as correlation coefficient analysis and regression analysis to analyze the relationship between voltage and current. Analyze the dynamic response characteristics of voltage and current through tools such as Bode plots and Nyquist plots, and obtain the mutual influence and correlation characteristics between voltage and current, including transfer function, gain and phase characteristics.

[0065] More specifically, the voltage stability characteristics, current stability characteristics, and circuit correlation characteristics are independently evaluated to obtain their respective stability scores. According to the importance and working characteristics of the MOSFET in specific applications, the weights of voltage, current, and correlation characteristics are determined, and the evaluation results of each characteristic are weighted and comprehensively analyzed to calculate the comprehensive circuit safety characteristic score, and finally the comprehensive circuit safety characteristics of the target MOSFET are obtained, including the stability and safety indicators of voltage, current, and the overall circuit.

[0066] It can be understood that through high-precision sensors and data processing technologies, the stability of voltage and current is accurately evaluated. Through time series and spectrum analysis, the dynamic change characteristics of voltage and current are detailedly understood to ensure the comprehensiveness of stability analysis. Through correlation and dynamic response analysis, the correlation characteristics between voltage and current are identified to reveal their mutual influence mechanism. Through independent evaluation and weighted comprehensive analysis, the stability and safety of voltage, current, and the circuit are comprehensively evaluated.

[0067] Preferably, the steps of adjusting and analyzing the gate voltage and cooling system of the target MOSFET according to the performance safety characteristics to obtain the gate voltage adjustment characteristics and cooling system adjustment characteristics that meet the performance safety characteristics include:

[0068] S21: Analyze the gate voltage increase space of the voltage data of the target MOSFET at the current moment according to the circuit safety characteristics to obtain the gate voltage increase space of the target MOSFET;

[0069] S22: Analyze the gate voltage increase scheme of the target MOSFET according to the gate voltage increase space to obtain several gate voltage increase schemes of the target MOSFET;

[0070] S23: Perform speculation processing on the temperature change of various gate voltage increase schemes to obtain the expected temperature increase characteristics corresponding to various gate voltage increase schemes;

[0071] S24: Perform safety prediction analysis on each expected temperature increase characteristic according to the temperature safety characteristics to obtain the temperature safety prediction characteristics of various gate voltage increase schemes;

[0072] S25: Analyze the pre-cooling plan for cooling the gate voltage increase scheme according to the temperature safety prediction characteristics of the gate voltage increase scheme to obtain several cooling control pre-plans corresponding to the gate voltage increase scheme;

[0073] S26: Perform combination processing on the gate voltage increase scheme and the corresponding various cooling control pre-plans to obtain several adjustment schemes;

[0074] S27: Perform value evaluation processing on each of the adjustment schemes to obtain the implementation value of each adjustment scheme, and perform conversion processing on the gate voltage increase scheme and the cooling control plan in the adjustment scheme with the optimal implementation value to obtain the gate voltage adjustment characteristics and the cooling system adjustment characteristics that meet the performance safety characteristics.

[0075] Specifically, according to the circuit safety characteristics, analyze the voltage data of the target MOSFET at the current moment, determine the range within which its gate voltage can be increased, and determine the upper limit of the gate voltage at which the MOSFET can operate safely under the existing conditions, so as to avoid circuit damage caused by exceeding the safety voltage.

[0076] More specifically, based on the gate voltage increase space, formulate multiple possible gate voltage increase schemes, generate multiple possible operation schemes, and provide a basis for subsequent optimization and selection.

[0077] More specifically, speculate on the temperature change for each gate voltage increase scheme, estimate the temperature change under each scheme, and predict the impact of different voltage increase schemes on the temperature of the MOSFET to ensure that the temperature is within the safe range.

[0078] More specifically, according to the temperature safety characteristics, analyze each temperature expected increase characteristic, evaluate the temperature safety of different voltage increase schemes, and screen out the voltage increase schemes with temperature changes within the safe range to avoid safety problems caused by overheating.

[0079] More specifically, formulate several cooling control plans for each gate voltage increase scheme that meets the temperature safety, provide cooling solutions, and ensure that the temperature is still controllable after the voltage increase.

[0080] More specifically, combine the gate voltage increase scheme with the corresponding cooling control plan to form a complete adjustment scheme, provide multiple adjustment schemes, covering both voltage and temperature control aspects, and ensure the comprehensive performance and safety of the system.

[0081] More specifically, perform value evaluation on each adjustment scheme to determine its implementation value, evaluate the implementation effect and feasibility of the adjustment scheme, and select the optimal scheme.

[0082] More specifically, convert the gate voltage increase scheme and the cooling control plan in the adjustment scheme with the optimal implementation value into actual operation parameters, implement the adjustment, and finally achieve the gate voltage adjustment and the cooling system adjustment that meet the performance safety characteristics.

[0083] It is understandable that through multi-step analysis and prediction, it is ensured that both the gate voltage and temperature of the MOSFET are within the safe range, preventing circuit damage and thermal runaway. The generation and evaluation of multiple solutions ensure that the selected solution achieves the best balance between performance and safety. By formulating a temperature reduction treatment plan, it is ensured that even in the case of voltage increase, the system temperature can be maintained within the controllable range, so as to achieve the optimal on-resistance and optimal operating loss realized by the increase of the gate voltage and the control of the temperature reduction system. The operating loss includes the energy loss of the temperature reduction system and the device life loss of the MOSFET.

[0084] Preferably, the step of analyzing the temperature reduction treatment plan for various gate voltage increase schemes according to the temperature safety prediction characteristics of the gate voltage increase scheme to obtain several temperature reduction control plans corresponding to the gate voltage increase scheme includes:

[0085] S251: Perform feature matching processing on the temperature safety prediction characteristics of the gate voltage increase scheme according to the preset temperature safety standard to obtain the required temperature reduction range corresponding to the temperature safety prediction characteristics of the gate voltage increase scheme;

[0086] S252: Perform gradient analysis processing on the required temperature reduction range of the gate voltage increase scheme to obtain several required temperature reduction gradients of the gate voltage increase scheme;

[0087] S253: Perform gradient execution data analysis on each required temperature reduction gradient according to the current temperature reduction system data of the target MOSFET to obtain the system execution data corresponding to each required temperature reduction gradient, and perform conversion processing on each system execution data to obtain several temperature reduction control plans of the gate voltage increase scheme.

[0088] Specifically, according to the preset temperature safety standard, perform feature matching processing on the temperature safety prediction characteristics of each gate voltage increase scheme. Through feature matching processing, determine the temperature safety prediction characteristics corresponding to each voltage increase scheme, and obtain the required temperature reduction range to ensure the temperature safety of each scheme.

[0089] More specifically, according to the result of the feature matching processing, obtain the required temperature reduction range corresponding to the temperature safety prediction characteristics of each gate voltage increase scheme, and clarify the required temperature reduction degree of each voltage increase scheme to ensure that effective temperature reduction measures can be formulated in the subsequent steps.

[0090] More specifically, perform gradient analysis processing on the required temperature reduction range of each gate voltage increase scheme, decompose it into several required temperature reduction gradients, and refine the required temperature reduction range into different gradients, so that the temperature reduction control plan can more precisely adapt to the actual needs and improve the temperature control accuracy.

[0091] More specifically, according to the cooling system data of the target MOSFET at the current moment, perform gradient execution data analysis on each required cooling gradient, analyze the state and capabilities of the current cooling system, ensure that the cooling plan matches the actual system capabilities, and avoid insufficient or excessive cooling.

[0092] More specifically, perform conversion processing on the system execution data of each required cooling gradient to obtain the corresponding cooling control plan, convert the analysis results into actual executable cooling operation steps, and form a specific cooling control plan to ensure feasibility and effectiveness.

[0093] It can be understood that through feature matching processing and gradient analysis processing, the matching accuracy between the gate voltage increase plan and the temperature safety standard is improved, ensuring the feasibility and safety of each plan in terms of temperature. The refined analysis of the required cooling gradient makes the cooling control more precise, avoiding problems of excessive or too low temperature caused by inaccurate cooling control. The gradient execution data analysis ensures the adaptability of the cooling control plan to the current cooling system data, guarantees the actual operability and effectiveness of the cooling measures. The finally obtained cooling control plan is based on the actual capabilities and requirements of the current cooling system, has high implementability, can be effectively executed and achieve the expected cooling effect.

[0094] Preferably, the steps of performing value evaluation processing on each of the adjustment plans to obtain the execution value of each of the adjustment plans include:

[0095] S271: Analyze the degree of on-resistance optimization of the gate voltage increase plan in the adjustment plan to obtain the first optimization value of the adjustment plan;

[0096] S272: Predict the temperature after cooling control for the cooling control plan in the adjustment plan to obtain the operating temperature of the MOSFET corresponding to the cooling control plan, and analyze the degree of on-resistance degradation of the MOSFET operating temperature to obtain the second optimization value of the adjustment plan;

[0097] S273: Analyze the operating loss of the cooling control plan in the adjustment plan to obtain the third optimization value of the adjustment plan;

[0098] S274: Perform weighted comprehensive analysis on the first optimization value, the second optimization value, and the third optimization value to obtain the execution value of the adjustment plan.

[0099] Specifically, for the gate voltage increase scheme in each adjustment plan, analyze the degree of on-resistance optimization, evaluate the impact of the voltage increase on the on-resistance of the MOSFET, calculate the optimized on-resistance value, obtain the first optimization value of the adjustment plan, and clarify the contribution of the voltage increase to improving the performance of the MOSFET by analyzing the degree of on-resistance optimization, ensuring that the on-resistance is reduced to the optimal value.

[0100] More specifically, for the cooling control plan in each adjustment plan, predict the temperature after cooling control to obtain the corresponding operating temperature of the MOSFET. Use a thermal model or simulation technology to predict the operating temperature of the MOSFET under the cooling control plan, obtain the operating temperature of the MOSFET, accurately predict the cooling effect, and ensure that the operating temperature of the MOSFET is within the safe range.

[0101] More specifically, analyze the degree of on-resistance degradation of the MOSFET operating temperature. According to the temperature-on-resistance relationship curve, analyze the impact of the current temperature on the on-resistance, obtain the second optimization value of the adjustment plan, evaluate the impact of temperature on the on-resistance, and ensure that the cooling plan effectively reduces the temperature correlation of the on-resistance.

[0102] More specifically, analyze the operating loss of the cooling control plan in each adjustment plan, calculate the energy consumption, resource consumption, etc. during the implementation of the cooling control plan, obtain the third optimization value of the adjustment plan, evaluate the implementation cost and energy efficiency of the cooling control plan, and ensure that the cooling measures are economical and effective.

[0103] More specifically, conduct a weighted comprehensive analysis of the first optimization value, the second optimization value, and the third optimization value. According to the preset weighting coefficients (reflecting the importance of each value), comprehensively analyze each optimization value to obtain the execution value of the adjustment plan. Consider various optimization factors comprehensively to obtain an execution value reflecting the overall benefit, providing a basis for decision-making.

[0104] It can be understood that through the comprehensive analysis of on-resistance, temperature impact, and operating loss, ensure that each adjustment plan achieves an optimized effect in multiple aspects, improve the overall performance. The detailed analysis steps and model predictions make the evaluation of each link more accurate, ensure that the execution value of the adjustment plan truly reflects the actual effect, evaluate from the three dimensions of on-resistance, temperature, and loss, ensure the comprehensive optimization of the adjustment plan in terms of performance, stability, and economy. Through weighted comprehensive analysis, the weights of different optimization values can be adjusted according to actual needs, providing flexible decision support, and ensuring that the finally selected plan best meets the actual needs.

[0105] In a second aspect, the present invention provides a method and apparatus for optimizing the on-resistance of a silicon carbide MOSFET, which is used to implement the method for optimizing the on-resistance of a silicon carbide MOSFET described in any one of the first aspects.

[0106] The above are only the preferred embodiments of the present invention and are not intended to limit the present invention. Any modifications, equivalent replacements, and improvements made within the spirit and principle of the present invention shall be included within the protection scope of the present invention.

Claims

1. A method for optimizing on-resistance of a silicon carbide MOSFET, characterized in that: include: Continuously collecting parameters of the working environment and circuit performance of the target MOSFET to obtain working data of the target MOSFET, and performing performance safety analysis on the target MOSFET according to the working data to obtain performance safety characteristics of the target MOSFET; Performing gate voltage and cooling system adjustment analysis on the target MOSFET according to the performance safety feature to obtain gate voltage adjustment features and cooling system adjustment features that meet the performance safety feature; Performing gate voltage and cooling system adjustment processing on the target MOSFET according to the gate voltage adjustment feature and the cooling system adjustment feature to optimize the on-resistance of the target MOSFET; The steps of continuously collecting parameters of the working environment and circuit performance of the target MOSFET to obtain working data of the target MOSFET, and performing performance safety analysis on the target MOSFET according to the working data to obtain the performance safety characteristics of the target MOSFET include: Continuously collecting parameters of the working environment of the target MOSFET to obtain working environment data of the target MOSFET; wherein the working environment data includes ambient temperature data and cooling system data; Continuously collecting parameters of circuit performance of the target MOSFET to obtain circuit performance data of the target MOSFET; wherein the circuit performance data includes voltage data and current data; Performing a temperature safety analysis on the target MOSFET according to the working environment data to obtain a temperature safety feature of the target MOSFET; Performing a safety analysis on the target MOSFET in terms of circuit parameters according to the circuit performance data to obtain a circuit safety feature of the target MOSFET; Combining the temperature safety feature with the circuit safety feature to obtain a performance safety feature of the target MOSFET; The step of performing gate voltage and cooling system adjustment analysis on the target MOSFET according to the performance safety feature to obtain gate voltage adjustment features and cooling system adjustment features that meet the performance safety feature includes: Performing gate voltage increase space analysis on voltage data of the target MOSFET at the current moment according to the circuit safety feature to obtain a gate voltage increase space of the target MOSFET; Performing gate voltage amplification scheme analysis on the target MOSFET according to the gate voltage amplification space to obtain several gate voltage amplification schemes for the target MOSFET; Performing temperature change estimation processing on various gate voltage amplification schemes to obtain expected temperature increase characteristics corresponding to various gate voltage amplification schemes; Performing safety prediction analysis on each of the expected temperature increase characteristics according to the temperature safety characteristics to obtain temperature safety prediction characteristics of various gate voltage amplification schemes; Performing a plan analysis on the cooling process of the gate voltage amplification scheme according to the temperature safety prediction characteristics of the gate voltage amplification scheme, and obtaining several cooling control plans corresponding to the gate voltage amplification scheme; Combining the gate voltage amplification scheme and the corresponding various temperature reduction control schemes to obtain several adjustment schemes; A value assessment is performed on each of the adjustment schemes to obtain an execution value of each of the adjustment schemes, and the gate voltage amplification scheme and the temperature reduction control plan in the adjustment scheme with the best execution value are converted to obtain gate voltage adjustment characteristics and temperature reduction system adjustment characteristics that meet the performance safety characteristics.

2. The method for optimizing the on-resistance of a silicon carbide MOSFET according to claim 1, wherein: The step of performing a temperature safety analysis on the target MOSFET according to the working environment data to obtain a temperature safety feature of the target MOSFET comprises: Performing a time-series characteristic analysis on the ambient temperature data to obtain a temperature variation characteristic of the target MOSFET; Performing representative data extraction processing on the ambient temperature data to obtain a stable temperature characteristic of the target MOSFET; Calculating the temperature control effect of the target MOSFET according to the cooling system data to obtain a theoretical cooling effect of the target MOSFET corresponding to the cooling system data; A safety performance feedback analysis is performed on the temperature variation characteristics and the stable temperature characteristics according to the theoretical cooling effect to obtain the temperature safety characteristics of the target MOSFET.

3. The method for optimizing the on-resistance of a silicon carbide MOSFET according to claim 1, wherein: The step of performing a safety analysis on the target MOSFET in terms of circuit parameters according to the circuit performance data to obtain the circuit safety characteristics of the target MOSFET comprises: Performing stability analysis on the voltage data to obtain voltage stability characteristics of the target MOSFET; Performing stability analysis on the current data to obtain current stability characteristics of the target MOSFET; Performing correlation analysis on the voltage data and the current data to obtain circuit correlation characteristics of the target MOSFET; The voltage stability characteristics, current stability characteristics and circuit-related characteristics of the target MOSFET are independently evaluated and weighted comprehensively analyzed to obtain the circuit safety characteristics of the target MOSFET.

4. The method for optimizing the on-resistance of a silicon carbide MOSFET according to claim 1, wherein: The steps of analyzing the cooling plans for various gate voltage amplification schemes according to the temperature safety prediction characteristics of the gate voltage amplification schemes to obtain several cooling control plans corresponding to the gate voltage amplification schemes include: Performing feature matching processing on the temperature safety prediction feature of the gate voltage amplification scheme according to a preset temperature safety standard to obtain a required temperature reduction range corresponding to the temperature safety prediction feature of the gate voltage amplification scheme; Performing gradient analysis on the required temperature reduction range of the gate voltage amplification scheme to obtain a number of required temperature reduction gradients of the gate voltage amplification scheme; According to the current cooling system data of the target MOSFET, gradient execution data analysis is performed on each of the required cooling gradients to obtain system execution data corresponding to each of the required cooling gradients, and each of the system execution data is converted to obtain several cooling control plans for the gate voltage amplification scheme.

5. The method for optimizing the on-resistance of a silicon carbide MOSFET according to claim 1, wherein: The steps of performing value evaluation on each of the adjustment plans to obtain the execution value of each of the adjustment plans include: Analyzing the on-resistance optimization degree of the gate voltage amplification scheme in the adjustment scheme to obtain a first optimization value of the adjustment scheme; Predicting the temperature after the temperature reduction control plan in the adjustment scheme is subjected to temperature reduction control, obtaining the MOSFET operating temperature corresponding to the temperature reduction control plan, and analyzing the degree of on-resistance degradation of the MOSFET operating temperature to obtain the second optimization value of the adjustment scheme; Analyzing the operating loss of the cooling control plan in the adjustment plan to obtain a third optimization value of the adjustment plan; A weighted comprehensive analysis is performed on the first optimization value, the second optimization value, and the third optimization value to obtain the execution value of the adjustment plan.

6. The method for optimizing on-resistance of a silicon carbide MOSFET according to claim 1, wherein: The step of adjusting the gate voltage and the cooling system of the target MOSFET according to the gate voltage adjustment feature and the cooling system adjustment feature to optimize the on-resistance of the target MOSFET includes: Performing gate voltage adjustment processing on the target MOSFET according to the gate voltage adjustment feature, so that the target MOSFET operates under the voltage drive corresponding to the gate voltage adjustment feature; Performing a cooling system adjustment process on the target MOSFET according to the cooling system adjustment feature, so that the cooling system performs a cooling process on the target MOSFET according to the cooling system adjustment feature; By adjusting the gate voltage and the cooling system of the target MOSFET, the on-resistance of the target MOSFET is optimized.

7. A method and device for optimizing on-resistance of silicon carbide MOSFET, characterized in that: A method for optimizing on-resistance of a silicon carbide MOSFET is used to implement any one of claims 1-6.

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